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Cryogenic platform to investigate strong microwave cavity-spin coupling in correlated magnetic materials
Authors:
Aulden K. Jones,
Martin Mourigal,
Andrew M. Mounce,
Michael P. Lilly
Abstract:
We present a comprehensive exploration of loop-gap resonators (LGRs) for electron spin resonance (ESR) studies, enabling investigations into the hybridization of solid-state magnetic materials with microwave polariton modes. The experimental setup, implemented in a Physical Property Measurement System by Quantum Design, allows for ESR spectra at temperatures as low as 2 Kelvin. The versatility of…
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We present a comprehensive exploration of loop-gap resonators (LGRs) for electron spin resonance (ESR) studies, enabling investigations into the hybridization of solid-state magnetic materials with microwave polariton modes. The experimental setup, implemented in a Physical Property Measurement System by Quantum Design, allows for ESR spectra at temperatures as low as 2 Kelvin. The versatility of continuous wave ESR spectroscopy is demonstrated through experiments on CuSO4.5H2O and MgCr2O4, showcasing the g-tensor and magnetic susceptibilities of these materials. The study delves into the challenges of fitting spectra under strong hybridization conditions and underscores the significance of proper calibration and stabilization. The detailed guide provided serves as a valuable resource for laboratories interested in exploring hybrid quantum systems through microwave resonators.
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Submitted 31 January, 2024; v1 submitted 7 December, 2023;
originally announced December 2023.
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Quantum Instrumentation Control Kit -- Defect Arbitrary Waveform Generator (QICK-DAWG): A Quantum Sensing Control Framework for Quantum Defects
Authors:
Emmeline G. Riendeau,
Luca Basso,
Jasmine J. Mah,
Rong Cong,
MA Sadi,
Jacob Henshaw,
KM Azizur-Rahman,
Aulden Jones,
Gajadhar Joshi,
Michael P. Lilly,
Andrew A. Mounce
Abstract:
Quantum information communication, sensing, and computation often require complex and expensive instrumentation resulting in a large entry barrier. The Quantum Instrumentation Control Kit (QICK) overcomes this barrier for superconducting qubits with a collection of software and firmware for state-of-the-art radio frequency system on chip (RFSoC's) field programmable gate architecture (FPGA) chips.…
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Quantum information communication, sensing, and computation often require complex and expensive instrumentation resulting in a large entry barrier. The Quantum Instrumentation Control Kit (QICK) overcomes this barrier for superconducting qubits with a collection of software and firmware for state-of-the-art radio frequency system on chip (RFSoC's) field programmable gate architecture (FPGA) chips. Here we present a software and firmware extension to QICK, the Quantum Instrumentation Control Kit - Defect Arbitrary Waveform Generator (QICK-DAWG), which is an open-source software and firmware package that supports full quantum control and measurement of nitrogen-vacancy defects in diamond and other quantum defects using RFSoC FPGAs. QICKDAWG extends QICK to the characterization of nitrogen-vacancy defects and other diamond quantum defects by implementing DC-1 GHz readout, AOM or gated laser control, and analog or photon counting readout options. QICK-DAWG also adds pulse sequence programs and data analysis scripts to collect and characterize photoluminescence (PL) intensity, optically detected magnetic resonance (ODMR) spectra, PL readout windows, Rabi oscillations, Ramsay interference spectra, Hahn echo spin-spin relaxation times T$_2$, and spin-lattice relaxation times T$_1$. We demonstrate that QICK-DAWG is a powerful new paradigm of open source quantum hardware that significantly lowers the entry barrier and cost for quantum sensing using quantum defects.
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Submitted 30 November, 2023;
originally announced November 2023.
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Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability
Authors:
Luis Fabián Peña,
Justine C. Koepke,
J. Houston Dycus,
Andrew Mounce,
Andrew D. Baczewski,
N. Tobias Jacobson,
Ezra Bussmann
Abstract:
SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable SiGe-based quantum computing. We demonstrate a technique to reconstruct 3D interfacial atomic structure spanning multiqubit areas by combining data from two verifiably atomic-resolution microscopy techniques…
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SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable SiGe-based quantum computing. We demonstrate a technique to reconstruct 3D interfacial atomic structure spanning multiqubit areas by combining data from two verifiably atomic-resolution microscopy techniques. Utilizing scanning tunneling microscopy (STM) to track molecular beam epitaxy (MBE) growth, we image surface atomic structure following deposition of each heterostructure layer revealing nanosized SiGe undulations, disordered strained-Si atomic steps, and nonconformal uncorrelated roughness between interfaces. Since phenomena such as atomic intermixing during subsequent overgrowth inevitably modify interfaces, we measure post-growth structure via cross-sectional high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). Features such as nanosized roughness remain intact, but atomic step structure is indiscernible in $1.0\pm 0.4$~nm-wide intermixing at interfaces. Convolving STM and HAADF-STEM data yields 3D structures capturing interface roughness and intermixing. We utilize the structures in an atomistic multivalley effective mass theory to quantify qubit spectral variability. The results indicate (1) appreciable valley splitting (VS) variability of roughly $\pm$ $50\%$ owing to alloy disorder, and (2) roughness-induced double-dot detuning bias energy variability of order $1-10$ meV depending on well thickness. For measured intermixing, atomic steps have negligible influence on VS, and uncorrelated roughness causes spatially fluctuating energy biases in double-dot detunings potentially incorrectly attributed to charge disorder.
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Submitted 27 June, 2023;
originally announced June 2023.
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Fabrication of thin diamond membranes by Ne$^+$ implantation
Authors:
Luca Basso,
Michael Titze,
Jacob Henshaw,
Pauli Kehayias,
Rong Cong,
Maziar Saleh Ziabari,
Tzu-Ming Lu,
Michael P. Lilly,
Andrew M. Mounce
Abstract:
Color centers in diamond are one of the most promising tools for quantum information science. Of particular interest is the use of single-crystal diamond membranes with nanoscale-thickness as hosts for color centers. Indeed, such structures guarantee a better integration with a variety of other quantum materials or devices, which can aid the development of diamond-based quantum technologies, from…
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Color centers in diamond are one of the most promising tools for quantum information science. Of particular interest is the use of single-crystal diamond membranes with nanoscale-thickness as hosts for color centers. Indeed, such structures guarantee a better integration with a variety of other quantum materials or devices, which can aid the development of diamond-based quantum technologies, from nanophotonics to quantum sensing. A common approach for membrane production is what is known as "smart-cut", a process where membranes are exfoliated from a diamond substrate after the creation of a thin sub-surface amorphous carbon layer by He$^+$ implantation. Due to the high ion fluence required, this process can be time-consuming. In this work, we demonstrated the production of thin diamond membranes by neon implantation of diamond substrates. With the target of obtaining membranes of $\sim$ 200 nm thickness and finding the critical damage threshold, we implanted different diamonds with 300 keV Ne$^+$ ions at different fluences. We characterized the structural properties of the implanted diamonds and the resulting membranes through SEM, Raman spectroscopy, and photoluminescence spectroscopy. We also found that a SRIM model based on a two-layer diamond/sp$^2$-carbon target better describes ion implantation, allowing us to estimate the diamond critical damage threshold for Ne$^+$ implantation. Compared to He$^+$ smart-cut, the use of a heavier ion like Ne$^+$ results in a ten-fold decrease in the ion fluence required to obtain diamond membranes and allows to obtain shallower smart-cuts, i.e. thinner membranes, at the same ion energy.
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Submitted 30 May, 2023;
originally announced May 2023.
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Mitigation of Nitrogen Vacancy Ionization from Material Integration for Quantum Sensing
Authors:
Jacob Henshaw,
Pauli Kehayias,
Luca Basso,
Michael Jaris,
Rong Cong,
Michael Titze,
Tzu-Ming Lu,
Michael P. Lilly,
Andrew M. Mounce
Abstract:
The nitrogen-vacancy (NV) color center in diamond has demonstrated great promise in a wide range of quantum sensing. Recently, there have been a series of proposals and experiments using NV centers to detect spin noise of quantum materials near the diamond surface. This is a rich complex area of study with novel nano-magnetism and electronic behavior, that the NV center would be ideal for sensing.…
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The nitrogen-vacancy (NV) color center in diamond has demonstrated great promise in a wide range of quantum sensing. Recently, there have been a series of proposals and experiments using NV centers to detect spin noise of quantum materials near the diamond surface. This is a rich complex area of study with novel nano-magnetism and electronic behavior, that the NV center would be ideal for sensing. However, due to the electronic properties of the NV itself and its host material, getting high quality NV centers within nanometers of such systems is challenging. Band bending caused by space charges formed at the metal-semiconductor interface force the NV center into its insensitive charge states. Here, we investigate optimizing this interface by depositing thin metal films and thin insulating layers on a series of NV ensembles at different depths to characterize the impact of metal films on different ensemble depths. We find an improvement of coherence and dephasing times we attribute to ionization of other paramagnetic defects. The insulating layer of alumina between the metal and diamond provide improved photoluminescence and higher sensitivity in all modes of sensing as compared to direct contact with the metal, providing as much as a factor of 2 increase in sensitivity, decrease of integration time by a factor of 4, for NV $T_1$ relaxometry measurements.
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Submitted 12 April, 2023;
originally announced April 2023.
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Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing
Authors:
Quinn Campbell,
Justine C. Koepke,
Jeffrey A. Ivie,
Andrew M. Mounce,
Daniel R. Ward,
Malcolm S. Carroll,
Shashank Misra,
Andrew D. Baczewski,
Ezra Bussmann
Abstract:
Atomic-precision advanced manufacturing enables the placement of dopant atoms within $\pm$1 lattice site in crystalline Si. However, it has recently been shown that reaction kinetics can introduce uncertainty in whether a single donor will incorporate at all in a minimal 3-dimer lithographic window. In this work, we explore the combined impact of lithographic variation and stochastic kinetics on P…
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Atomic-precision advanced manufacturing enables the placement of dopant atoms within $\pm$1 lattice site in crystalline Si. However, it has recently been shown that reaction kinetics can introduce uncertainty in whether a single donor will incorporate at all in a minimal 3-dimer lithographic window. In this work, we explore the combined impact of lithographic variation and stochastic kinetics on P incorporation as the size of such a window is increased. We augment a kinetic model for PH$_3$ dissociation leading to P incorporation on Si(100)-2$\times$1 to include barriers for reactions across distinct dimer rows. Using this model, we demonstrate that even for a window consisting of 2$\times$3 silicon dimers, the probability that at least one donor incorporates is nearly unity. We also examine the impact of size of the lithographic window, finding that the incorporation fraction saturates to $δ$-layer like coverage as the circumference-to-area ratio approaches zero. We predict that this incorporation fraction depends strongly on the dosage of the precursor, and that the standard deviation of the number of incorporations scales as $\sim \sqrt{n}$, as would be expected for a series of largely independent incorporation events. Finally, we characterize an array of experimentally prepared multi-donor lithographic windows and use our kinetic model to study variability due to the observed lithographic roughness, predicting a negligible impact on incorporation statistics. We find good agreement between our model and the inferred incorporation in these windows from scanning tunneling microscope measurements, indicating the robustness of atomic-precision advanced manufacturing to errors in patterning for multi-donor patches.
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Submitted 21 July, 2022;
originally announced July 2022.
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Electron spin resonance and collective excitations in magic-angle twisted bilayer graphene
Authors:
Erin Morissette,
Jiang-Xiazi Lin,
Dihao Sun,
Liangji Zhang,
Song Liu,
Daniel Rhodes,
K. Watanabe,
T. Taniguchi,
James Hone,
Johannes Pollanen,
Mathias S. Scheurer,
Michael Lilly,
Andrew Mounce,
J. I. A. Li
Abstract:
In a strongly correlated system, collective excitations contain key information regarding the electronic order of the underlying ground state. An abundance of collective modes in the spin and valley isospin channels of magic-angle graphene moiré bands has been alluded to by a series of recent experiments. However, direct observation of collective excitations has remained elusive due to the lack of…
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In a strongly correlated system, collective excitations contain key information regarding the electronic order of the underlying ground state. An abundance of collective modes in the spin and valley isospin channels of magic-angle graphene moiré bands has been alluded to by a series of recent experiments. However, direct observation of collective excitations has remained elusive due to the lack of a spin probe. In this work, we use a resistively-detected electron spin resonance technique to look for low-energy collective excitations in magic-angle twisted bilayer graphene. We report direct observation of collective modes in the form of microwave-induced resonance near half filling of the moiré flatbands. The frequency-magnetic field dependence of these resonance modes sheds light onto the nature of intervalley spin coupling, allowing us to extract parameters such as intervalley exchange interaction and spin stiffness. Two independent observations testify that the generation and detection of the microwave resonance relies on the strong correlation within the flat moiré energy band. First, the onset of robust resonance response coincides with the spontaneous flavor polarization at half moiré filling, and remains absent in the density range where the underlying Fermi surface is isospin unpolarized. Second, we performed the same resonance measurement on graphene monolayer and bilayer samples, including twisted bilayer with a large twist angle, where flatband physics is absent. We observe no indication of resonance response in these samples across a large range of carrier density, microwave frequency and power. A natural explanation is that the resonance response near the magic angle originates from "Dirac revivals" and the resulting isospin order.
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Submitted 14 July, 2022; v1 submitted 16 June, 2022;
originally announced June 2022.
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Nanoscale Solid-State Nuclear Quadrupole Resonance Spectroscopy using Depth-Optimized Nitrogen-Vacancy Ensembles in Diamond
Authors:
Jacob Henshaw,
Pauli Kehayias,
Maziar Saleh Ziabari,
Michael Titze,
Erin Morissette,
Kenji Watanabe,
Takashi Taniguchi,
J. I. A Li,
Victor M. Acosta,
Edward Bielejec,
Michael P. Lilly,
Andrew M. Mounce
Abstract:
Nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) spectroscopy of bulk quantum materials have provided insight into phenomena such as quantum phase criticality, magnetism, and superconductivity. With the emergence of nanoscale 2-D materials with magnetic phenomena, inductively-detected NMR and NQR spectroscopy are not sensitive enough to detect the smaller number of spins in…
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Nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) spectroscopy of bulk quantum materials have provided insight into phenomena such as quantum phase criticality, magnetism, and superconductivity. With the emergence of nanoscale 2-D materials with magnetic phenomena, inductively-detected NMR and NQR spectroscopy are not sensitive enough to detect the smaller number of spins in nanomaterials. The nitrogen-vacancy (NV) center in diamond has shown promise in bringing the analytic power of NMR and NQR spectroscopy to the nanoscale. However, due to depth-dependent formation efficiency of the defect centers, noise from surface spins, band bending effects, and the depth dependence of the nuclear magnetic field, there is ambiguity regarding the ideal NV depth for surface NMR of statistically-polarized spins. In this work, we prepared a range of shallow NV ensemble layer depths and determined the ideal NV depth by performing NMR spectroscopy on statistically-polarized \fluorine{} in Fomblin oil on the diamond surface. We found that the measurement time needed to achieve an SNR of 3 using XY8-N noise spectroscopy has a minimum at an NV depth of 5.4 nm. To demonstrate the sensing capabilities of NV ensembles, we perform NQR spectroscopy on the \boron{} of hexagonal boron nitride flakes. We compare our best diamond to previous work with a single NV and find that this ensemble provides a shorter measurement time with excitation diameters as small as 4 $μ$m. This analysis provides ideal conditions for further experiments involving NMR/NQR spectroscopy of 2-D materials with magnetic properties.
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Submitted 29 December, 2021;
originally announced December 2021.
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Towards Deterministic Creation of Single Photon Sources in Diamond using In-Situ Ion Counting
Authors:
M. Titze,
H. Byeon,
A. R. Flores,
J. Henshaw,
C. T. Harris,
A. M. Mounce,
E. S. Bielejec
Abstract:
We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical focused ion beam implantation relies on knowing the beam current and setting a pulse length of the ion pulse to define the number of ions implanted at each location…
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We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical focused ion beam implantation relies on knowing the beam current and setting a pulse length of the ion pulse to define the number of ions implanted at each location, referred to as timed implantation in this paper. This process is dominated by Poisson statistics resulting in large errors for low number of implanted ions. Instead, we use in-situ detection to measure the number of ions arriving at the substrate resulting in a two-fold reduction in the error on the number of implanted ions used to generate a single optically active silicon vacancy (SiV) defect in diamond compared to timed implantation. Additionally, through post-implantation analysis, we can further reduce the error resulting in a seven-fold improvement compared to timed implantation, allowing us to better estimate the conversion yield of implanted Si to SiV. We detect SiV emitters by photoluminescence spectroscopy, determine the number of emitters per location and calculate the yield to be 2.98 + 0.21 / - 0.24 %. Candidates for single photon emitters are investigated further by Hanbury-Brown-Twiss interferometry confirming that 82 % of the locations exhibit single photon emission statistics. This counted ion implantation technique paves the way towards deterministic creation of SiV when ion counting is used in combination with methods that improve the activation yield of SiV.
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Submitted 3 December, 2021;
originally announced December 2021.
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The impact of stochastic incorporation on atomic-precision Si:P arrays
Authors:
Jeffrey A. Ivie,
Quinn Campbell,
Justin C. Koepke,
Mitchell I. Brickson,
Peter A. Schultz,
Richard P. Muller,
Andrew M. Mounce,
Daniel R. Ward,
Malcom S. Carroll,
Ezra Bussmann,
Andrew D. Baczewski,
Shashank Misra
Abstract:
Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within $\sim$1 nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorpor…
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Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within $\sim$1 nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorporate into a single lithographic window is manifestly uncertain. We present experimental results indicating that the likelihood of incorporating into an ideally written three-dimer single-donor window is $63 \pm 10\%$ for room-temperature dosing, and corroborate these results with a model for the incorporation kinetics. Nevertheless, further analysis of this model suggests conditions that might raise the incorporation rate to near-deterministic levels. We simulate bias spectroscopy on a chain of comparable dimensions to the array in our yield study, indicating that such an experiment may help confirm the inferred incorporation rate.
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Submitted 25 May, 2021;
originally announced May 2021.
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A fitting algorithm for optimizing ion implantation energies and fluences
Authors:
Pauli Kehayias,
Jacob Henshaw,
Maziar Saleh Ziabari,
Michael Titze,
Edward Bielejec,
Michael P. Lilly,
Andrew M. Mounce
Abstract:
We describe a method to automatically generate an ion implantation recipe, a set of energies and fluences, to produce a desired defect density profile in a solid using the fewest required energies. We simulate defect density profiles for a range of ion energies, fit them with an appropriate function, and interpolate to yield defect density profiles at arbitrary ion energies. Given $N$ energies, we…
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We describe a method to automatically generate an ion implantation recipe, a set of energies and fluences, to produce a desired defect density profile in a solid using the fewest required energies. We simulate defect density profiles for a range of ion energies, fit them with an appropriate function, and interpolate to yield defect density profiles at arbitrary ion energies. Given $N$ energies, we then optimize a set of $N$ energy-fluence pairs to match a given target defect density profile. Finally, we find the minimum $N$ such that the error between the target defect density profile and the defect density profile generated by the $N$ energy-fluence pairs is less than a given threshold. Inspired by quantum sensing applications with nitrogen-vacancy centers in diamond, we apply our technique to calculate optimal ion implantation recipes to create uniform-density 1 $μ$m surface layers of $^{15}$N or vacancies (using $^4$He).
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Submitted 27 May, 2021; v1 submitted 3 March, 2021;
originally announced March 2021.
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A physically unclonable function using NV diamond magnetometry and micromagnet arrays
Authors:
Pauli Kehayias,
Ezra Bussmann,
Tzu-Ming Lu,
Andrew M. Mounce
Abstract:
A physically unclonable function (PUF) is an embedded hardware security measure that provides protection against counterfeiting. Here we present our work on using an array of randomly-magnetized micron-sized ferromagnetic bars (micromagnets) as a PUF. We employ a 4 $μ$m thick surface layer of nitrogen-vacancy (NV) centers in diamond to image the magnetic fields from each micromagnet in the array,…
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A physically unclonable function (PUF) is an embedded hardware security measure that provides protection against counterfeiting. Here we present our work on using an array of randomly-magnetized micron-sized ferromagnetic bars (micromagnets) as a PUF. We employ a 4 $μ$m thick surface layer of nitrogen-vacancy (NV) centers in diamond to image the magnetic fields from each micromagnet in the array, after which we extract the magnetic polarity of each micromagnet using image analysis techniques. After evaluating the randomness of the micromagnet array PUF and the sensitivity of the NV readout, we conclude by discussing the possible future enhancements for improved security and magnetic readout.
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Submitted 18 February, 2020;
originally announced February 2020.
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Computer-automated tuning procedures for semiconductor quantum dot arrays
Authors:
A. R. Mills,
M. M. Feldman,
C. Monical,
P. J. Lewis,
K. W. Larson,
A. M. Mounce,
J. R. Petta
Abstract:
As with any quantum computing platform, semiconductor quantum dot devices require sophisticated hardware and controls for operation. The increasing complexity of quantum dot devices necessitates the advancement of automated control software and image recognition techniques for rapidly evaluating charge stability diagrams. We use an image analysis toolbox developed in Python to automate the calibra…
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As with any quantum computing platform, semiconductor quantum dot devices require sophisticated hardware and controls for operation. The increasing complexity of quantum dot devices necessitates the advancement of automated control software and image recognition techniques for rapidly evaluating charge stability diagrams. We use an image analysis toolbox developed in Python to automate the calibration of virtual gates, a process that previously involved a large amount of user intervention. Moreover, we show that straightforward feedback protocols can be used to simultaneously tune multiple tunnel couplings in a triple quantum dot in a computer automated fashion. Finally, we adopt the use of a `tunnel coupling lever arm' to model the interdot barrier gate response and discuss how it can be used to more rapidly tune interdot tunnel couplings to the GHz values that are compatible with exchange gates.
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Submitted 24 July, 2019;
originally announced July 2019.
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Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures
Authors:
M. J. Curry,
M. Rudolph,
T. D. England,
A. M. Mounce,
R. M. Jock,
C. Bureau-Oxton,
P. Harvey-Collard,
P. A. Sharma,
J. M. Anderson,
D. M. Campbell,
J. R. Wendt,
D. R. Ward,
S. M. Carr,
M. P. Lilly,
M. S. Carroll
Abstract:
High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance o…
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High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). Both circuits are mounted on the mixing-chamber stage of a dilution refrigerator and are connected to silicon metal oxide semiconductor (Si-MOS) quantum dot devices on a printed circuit board (PCB). The power dissipated by the CB-HBT ranges from 0.1 to 1 μW whereas the power of the AC-HBT ranges from 1 to 20 μW. Referred to the input, the noise spectral density is low for both circuits, in the 15 to 30 fA/$\sqrt{\textrm{Hz}}$ range. The charge sensitivity for the CB-HBT and AC-HBT is 330 μe/$\sqrt{\textrm{Hz}}$ and 400 μe/$\sqrt{\textrm{Hz}}$, respectively. For the single-shot readout performed, less than 10 μs is required for both circuits to achieve bit error rates below $10^{-3}$, which is a putative threshold for quantum error correction.
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Submitted 14 January, 2019;
originally announced January 2019.
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Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon
Authors:
Patrick Harvey-Collard,
N. Tobias Jacobson,
Chloé Bureau-Oxton,
Ryan M. Jock,
Vanita Srinivasa,
Andrew M. Mounce,
Daniel R. Ward,
John M. Anderson,
Ronald P. Manginell,
Joel R. Wendt,
Tammy Pluym,
Michael P. Lilly,
Dwight R. Luhman,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the s…
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Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates.
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Submitted 11 June, 2019; v1 submitted 22 August, 2018;
originally announced August 2018.
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All-electrical universal control of a double quantum dot qubit in silicon MOS
Authors:
Patrick Harvey-Collard,
Ryan M. Jock,
N. Tobias Jacobson,
Andrew D. Baczewski,
Andrew M. Mounce,
Matthew J. Curry,
Daniel R. Ward,
John M. Anderson,
Ronald P. Manginell,
Joel R. Wendt,
Martin Rudolph,
Tammy Pluym,
Michael P. Lilly,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot rea…
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Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS.
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Submitted 6 February, 2018;
originally announced February 2018.
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Probing low noise at the MOS interface with a spin-orbit qubit
Authors:
Ryan M. Jock,
N. Tobias Jacobson,
Patrick Harvey-Collard,
Andrew M. Mounce,
Vanita Srinivasa,
Dan R. Ward,
John Anderson,
Ron Manginell,
Joel R. Wendt,
Martin Rudolph,
Tammy Pluym,
John King Gamble,
Andrew D. Baczewski,
Wayne M. Witzel,
Malcolm S. Carroll
Abstract:
The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns hav…
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The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet-triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 $μ$s using 99.95% $^{28}$Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise.
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Submitted 13 July, 2017;
originally announced July 2017.
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Evidence for spin-triplet superconductivity in U$_2$PtC$_2$ from $^{195}$Pt NMR
Authors:
A. M. Mounce,
H. Yasuoka,
G. Koutroulakis,
N. Ni,
E. D. Bauer,
F. Ronning,
J. D. Thompson
Abstract:
Nuclear magnetic resonance (NMR) measurements on the $^{195}$Pt nucleus in an aligned powder of the moderately heavy-fermion material U2PtC2 are consistent with spin-triplet pairing in its superconducting state. Across the superconducting transition temperature and to much lower temperatures, the NMR Knight shift is temperature independent for field both parallel and perpendicular to the tetragona…
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Nuclear magnetic resonance (NMR) measurements on the $^{195}$Pt nucleus in an aligned powder of the moderately heavy-fermion material U2PtC2 are consistent with spin-triplet pairing in its superconducting state. Across the superconducting transition temperature and to much lower temperatures, the NMR Knight shift is temperature independent for field both parallel and perpendicular to the tetragonal c-axis, expected for triplet equal-spin pairing superconductivity. The NMR spin-lattice relaxation rate 1/T$_1$, in the normal state, exhibits characteristics of ferromagnetic fluctuations, compatible with an enhanced Wilson ratio. In the superconducting state, 1/T$_1$ follows a power law with temperature without a coherence peak giving additional support that U$_2$PtC$_2$ is an unconventional superconductor. Bulk measurements of the AC-susceptibility and resistivity indicate that the upper critical field exceeds the Pauli limiting field for spin-singlet pairing and is near the orbital limiting field, an additional indication for spin-triplet pairing.
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Submitted 8 August, 2014;
originally announced August 2014.
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Microscopic coexistence of a two-component incommensurate spin density wave with superconductivity in underdoped NaFe$_{0.983}$Co$_{0.017}$As
Authors:
Sangwon Oh,
A. M. Mounce,
Jeongseop A. Lee,
W. P. Halperin,
C. L. Zhang,
S. Carr,
Pengcheng Dai,
A. P. Reyes,
P. L. Kuhns
Abstract:
We have performed $^{75}$As and $^{23}$Na nuclear magnetic resonance (NMR) measurements on a single crystal of NaFe$_{0.9835}$Co$_{0.0165}$As and found microscopic coexistence of superconductivity with a two-component spin density wave (SDW). Using $^{23}$Na NMR we measured the spatial distribution of local magnetic fields. The SDW was found to be incommensurate with a major component having magne…
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We have performed $^{75}$As and $^{23}$Na nuclear magnetic resonance (NMR) measurements on a single crystal of NaFe$_{0.9835}$Co$_{0.0165}$As and found microscopic coexistence of superconductivity with a two-component spin density wave (SDW). Using $^{23}$Na NMR we measured the spatial distribution of local magnetic fields. The SDW was found to be incommensurate with a major component having magnetic moment ($\sim0.2\,μ_B$/Fe) and a smaller component with magnetic moment ($\sim0.02\,μ_B$/Fe). Spin lattice relaxation experiments reveal that this coexistence occurs at a microscopic level.
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Submitted 19 July, 2013;
originally announced July 2013.
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Absence of static orbital current magnetism at the apical oxygen site in HgBa$_2$CuO$_{4+δ}$ from NMR
Authors:
A. M. Mounce,
Sangwon Oh,
Jeongseop A. Lee,
W. P. Halperin,
A. P. Reyes,
P. L. Kuhns,
M. K. Chan,
C. Dorow,
L. Ji,
D. Xia,
X. Zhao,
M. Greven
Abstract:
The simple structure of HgBa$_2$CuO$_{4+δ}$ (Hg1201) is ideal among cuprates for study of the pseudogap phase as a broken symmetry state. We have performed $^{17}$O nuclear magnetic resonance (NMR) on an underdoped Hg1201 crystal with transition temperature of 74 K to look for circulating orbital currents proposed theoretically and inferred from neutron scattering. The narrow spectra preclude stat…
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The simple structure of HgBa$_2$CuO$_{4+δ}$ (Hg1201) is ideal among cuprates for study of the pseudogap phase as a broken symmetry state. We have performed $^{17}$O nuclear magnetic resonance (NMR) on an underdoped Hg1201 crystal with transition temperature of 74 K to look for circulating orbital currents proposed theoretically and inferred from neutron scattering. The narrow spectra preclude static local fields in the pseudogap phase at the apical site, suggesting that the moments observed with neutrons are fluctuating. The NMR frequency shifts are consistent with a dipolar field from the Cu$^{+2}$ site.
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Submitted 23 April, 2013;
originally announced April 2013.
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Spin-pairing and penetration depth measurements from nuclear magnetic resonance in NaFe$_{0.975}$Co$_{0.025}$As
Authors:
Sangwon Oh,
A. M. Mounce,
J. S. Lee,
W. P. Halperin,
C. L. Zhang,
S. Carr,
Pengcheng Dai
Abstract:
We have performed $^{75}$As nuclear magnetic resonance (NMR) Knight shift measurements on single crystals of NaFe$_{0.975}$Co$_{0.025}$As to show that its superconductivity is a spin-paired, singlet state consistent with predictions of the weak-coupling BCS theory. We use a spectator nucleus, $^{23}$Na, uncoupled from the superconducting condensate, to determine the diamagnetic magnetization and t…
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We have performed $^{75}$As nuclear magnetic resonance (NMR) Knight shift measurements on single crystals of NaFe$_{0.975}$Co$_{0.025}$As to show that its superconductivity is a spin-paired, singlet state consistent with predictions of the weak-coupling BCS theory. We use a spectator nucleus, $^{23}$Na, uncoupled from the superconducting condensate, to determine the diamagnetic magnetization and to correct for its effect on the $^{75}$As NMR spectra. The resulting temperature dependence of the spin susceptibility follows the Yosida function as predicted by BCS for an isotropic, single-valued energy gap. Additionally, we have analyzed the $^{23}$Na spectra that become significantly broadened by vortices to obtain the superconducting penetration depth as a function of temperature with $λ_{ab}(0) = 5,327 \pm$ 78$\,Å$.
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Submitted 22 May, 2013; v1 submitted 6 February, 2013;
originally announced February 2013.
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Nuclear Magnetic Resonance Studies of Vortices in High Temperature Superconductors
Authors:
A. M. Mounce,
S. Oh,
W. P. Halperin
Abstract:
The distinct distribution of local magnetic fields due to superconducting vortices can be detected with nuclear magnetic resonance (NMR) and used to investigate vortices and related physical properties of extreme type II superconductivity. This review summarizes work on high temperature superconductors (HTS) including cuprates and pnictide materials. Recent experimental results are presented which…
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The distinct distribution of local magnetic fields due to superconducting vortices can be detected with nuclear magnetic resonance (NMR) and used to investigate vortices and related physical properties of extreme type II superconductivity. This review summarizes work on high temperature superconductors (HTS) including cuprates and pnictide materials. Recent experimental results are presented which reveal the nature of vortex matter and novel electronic states. For example, the NMR spectrum has been found to provide a sharp indication of the vortex melting transition. In the vortex solid a frequency dependent spin-lattice relaxation has been reported in cuprates, including YBa$_2$Cu$_3$O$_{7-x}$, Bi$_2$SrCa$_2$Cu$_2$O$_{8+δ}$, and Tl$_2$Ba$_2$CuO$_{6+δ}$. These results have initiated a new spectroscopy via Doppler shifted nodal quasiparticles for the investigation of vortices. At very high magnetic fields this approach is a promising method for the study of vortex core excitations. These measurements have been used to quantify an induced spin density wave near the vortex cores in Bi$_2$SrCa$_2$Cu$_2$O$_{8+δ}$. Although the cuprates have a different superconducting order parameter than the iron arsenide superconductors there are, nonetheless, some striking similarities between them regarding vortex dynamics and frequency dependent relaxation.
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Submitted 15 December, 2011;
originally announced December 2011.
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Magnetic field dependence of spin-lattice relaxation in the s$\pm$ state of Ba$_{0.67}$K$_{0.33}$Fe$_{2}$As$_{2}$
Authors:
Sangwon Oh,
A. M. Mounce,
W. P. Halperin,
C. L. Zhang,
Pengcheng Dai,
A. P. Reyes,
P. L. Kuhns
Abstract:
The spatially averaged density of states, <N(0)>, of an unconventional d-wave superconductor is magnetic field dependent, proportional to $H^{1/2}$, owing to the Doppler shift of quasiparticle excitations in a background of vortex supercurrents[1,2]. This phenomenon, called the Volovik effect, has been predicted to exist for a sign changing $s\pm$ state [3], although it is absent in a single band…
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The spatially averaged density of states, <N(0)>, of an unconventional d-wave superconductor is magnetic field dependent, proportional to $H^{1/2}$, owing to the Doppler shift of quasiparticle excitations in a background of vortex supercurrents[1,2]. This phenomenon, called the Volovik effect, has been predicted to exist for a sign changing $s\pm$ state [3], although it is absent in a single band s-wave superconductor. Consequently, we expect there to be Doppler contributions to the NMR spin-lattice relaxation rate, $1/T_1 \propto <N(0)^2>$, for an $s\pm$ state which will depend on magnetic field. We have measured the $^{75}$As $1/T_1$ in a high-quality, single crystal of Ba$_{0.67}$K$_{0.33}$Fe$_{2}$As$_{2}$ over a wide range of field up to 28 T. Our spatially resolved measurements show that indeed there are Doppler contributions to $1/T_1$ which increase closer to the vortex core, with a spatial average proportional to $H^2$, inconsistent with recent theory [4]
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Submitted 30 April, 2012; v1 submitted 17 September, 2011;
originally announced September 2011.
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$^{75}$As NMR of Ba(Fe$_{0.93}$Co$_{0.07}$)$_{2}$As$_{2}$ in High Magnetic Field
Authors:
Sangwon Oh,
A. M. Mounce,
S. Mukhopadhyay,
W. P. Halperin,
A. B. Vorontsov,
S. L. Bud'ko,
P. C. Canfield,
Y. Furukawa,
A. P. Reyes,
P. L. Kuhns
Abstract:
The superconducting state of an optimally doped single crystal of Ba(Fe$_{0.93}$Co$_{0.07}$)$_2$As$_2$ was investigated by $^{75}$As NMR in high magnetic fields from 6.4 T to 28 T. It was found that the Knight shift is least affected by vortex supercurrents in high magnetic fields, $H>11$ T, revealing slow, possibly higher order than linear, increase with temperature at $T \lesssim 0.5 \, T_c$, wi…
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The superconducting state of an optimally doped single crystal of Ba(Fe$_{0.93}$Co$_{0.07}$)$_2$As$_2$ was investigated by $^{75}$As NMR in high magnetic fields from 6.4 T to 28 T. It was found that the Knight shift is least affected by vortex supercurrents in high magnetic fields, $H>11$ T, revealing slow, possibly higher order than linear, increase with temperature at $T \lesssim 0.5 \, T_c$, with $T_c \approx 23 \, K$. This is consistent with the extended s-wave state with $A_{1g}$ symmetry but the precise details of the gap structure are harder to resolve. Measurements of the NMR spin-spin relaxation time, $T_2$, indicate a strong indirect exchange interaction at all temperatures. Below the superconducting transition temperature vortex dynamics lead to an anomalous dip in $T_2$ at the vortex freezing transition from which we obtain the vortex phase diagram up to $H = 28$ T.
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Submitted 1 June, 2011; v1 submitted 5 January, 2011;
originally announced January 2011.
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Spin-Density Wave near the Vortex Cores of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$
Authors:
A. M. Mounce,
S. Oh,
S. Mukhopadhyay,
W. P. Halperin,
A. P. Reyes,
P. L. Kuhns,
K. Fujita,
M. Ishikado,
S. Uchida
Abstract:
Competition with magnetism is at the heart of high temperature superconductivity, most intensely felt near a vortex core. To investigate vortex magnetism we have developed a spatially resolved probe using nuclear magnetic resonance. Our spin-lattice-relaxation spectroscopy is spatially resolved both within a conduction plane as well as from one plane to another. With this approach we have found a…
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Competition with magnetism is at the heart of high temperature superconductivity, most intensely felt near a vortex core. To investigate vortex magnetism we have developed a spatially resolved probe using nuclear magnetic resonance. Our spin-lattice-relaxation spectroscopy is spatially resolved both within a conduction plane as well as from one plane to another. With this approach we have found a spin-density wave associated with the vortex core in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$, which is expected from scanning tunneling microscope observations of "checkerboard" patterns in the local density of electronic states.[1] We determine both the spin-modulation amplitude and decay length from the vortex core in fields up to H=30 T.
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Submitted 5 November, 2010;
originally announced November 2010.
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Charge Induced Vortex Lattice Instability
Authors:
A. M. Mounce,
S. Oh,
S. Mukhopadhyay,
W. P. Halperin,
A. P. Reyes,
P. L. Kuhns,
K. Fujita,
M. Ishikado,
S. Uchida
Abstract:
It has been predicted that superconducting vortices should be electrically charged and that this effect is particularly enhanced for, high temperature superconductors.\cite{kho95,bla96} Hall effect\cite{hag91} and nuclear magnetic resonance (NMR) experiments\cite{kum01} suggest the existence of vortex charging, but the effects are small and the interpretation controversial. Here we show that the A…
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It has been predicted that superconducting vortices should be electrically charged and that this effect is particularly enhanced for, high temperature superconductors.\cite{kho95,bla96} Hall effect\cite{hag91} and nuclear magnetic resonance (NMR) experiments\cite{kum01} suggest the existence of vortex charging, but the effects are small and the interpretation controversial. Here we show that the Abrikosov vortex lattice, characteristic of the mixed state of superconductors, will become unstable at sufficiently high magnetic field if there is charge trapped on the vortex core. Our NMR measurements of the magnetic fields generated by vortices in Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+y}$ single crystals\cite{che07} provide evidence for an electrostatically driven vortex lattice reconstruction with the magnitude of charge on each vortex pancake of $\mathbf{\sim 2}$x$\mathbf{10^{-3} e}$, depending on do**, in line with theoretical estimates.\cite{kho95,kna05}
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Submitted 5 October, 2010; v1 submitted 23 September, 2010;
originally announced September 2010.
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Magnetic Impurities in the Pnictide Superconductor Ba$_{1-x}$K$_{x}$Fe$_{2}$As$_{2}$
Authors:
Sutirtha Mukhopadhyay,
Sangwon Oh,
A M Mounce,
Moohee Lee,
W P Halperin,
N Ni,
S L Bud'ko,
P C Canfield,
A P Reyes,
P L Kuhns
Abstract:
NMR measurements have been performed on single crystals of Ba$_{1-x}$K$_{x}$Fe$_2$As$_2$ (x = 0, 0.45) and CaFe$_2$As$_2$ grown from Sn flux. The Ba-based pnictide crystals contain significant amounts of Sn in their structure, $\sim 1$%, giving rise to magnetic impurity effects evident in the NMR spectrum and in the magnetization. Our experiments show that the large impurity magnetization is bro…
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NMR measurements have been performed on single crystals of Ba$_{1-x}$K$_{x}$Fe$_2$As$_2$ (x = 0, 0.45) and CaFe$_2$As$_2$ grown from Sn flux. The Ba-based pnictide crystals contain significant amounts of Sn in their structure, $\sim 1$%, giving rise to magnetic impurity effects evident in the NMR spectrum and in the magnetization. Our experiments show that the large impurity magnetization is broadly distributed on a microscopic scale, generating substantial magnetic field gradients. There is a concomitant 20% reduction in the transition temperature which is most likely due to magnetic electron scattering. We suggest that the relative robustness of superconductivity ($x=0.45$) in the presence of severe magnetic inhomogeneity might be accounted for by strong spatial correlations between impurities on the coherence length scale.
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Submitted 3 March, 2009;
originally announced March 2009.
