Showing 1–50 of 69 results for author: Morton, J J L

A multi-module silicon-on-insulator chip assembly containing quantum dots and cryogenic radio-frequency readout electronics

Authors: David J. Ibberson, James Kirkman, John J. L. Morton, M. Fernando Gonzalez-Zalba, Alberto Gomez-Saiz

Abstract: Quantum processing units will be modules of larger information processing systems containing also digital and analog electronics modules. Silicon-based quantum computing offers the enticing opportunity to manufacture all the modules using the same technology platform. Here, we present a cryogenic multi-module assembly for multiplexed readout of silicon quantum devices where all modules have been f… ▽ More Quantum processing units will be modules of larger information processing systems containing also digital and analog electronics modules. Silicon-based quantum computing offers the enticing opportunity to manufacture all the modules using the same technology platform. Here, we present a cryogenic multi-module assembly for multiplexed readout of silicon quantum devices where all modules have been fabricated using the same fully-depleted silicon-on-insulator (FDSOI) CMOS process. The assembly is constituted by three chiplets: (i) a low-noise amplifier (LNA), (ii) a single-pole eight-throw switch (SP8T), and (iii) a silicon quantum dot (QD) array. We characterise each module individually and show (i) a gain over 35 dB, a bandwidth of 118 MHz, a minimum noise temperature of 4.2 K, (ii) an insertion loss smaller than 1.1 dB, a noise temperature smaller than 1.1~K across 0-2 GHz, and (iii) single-electron box (SEB) charge sensors. Finally, we combine all elements into a single demonstration showing time-domain radio-frequency multiplexing of two SEBs paving the way to an all-silicon quantum computing system. △ Less

Submitted 30 May, 2024; v1 submitted 7 May, 2024; originally announced May 2024.

Comments: This work has been submitted to the IEEE for possible publication. Copyright may be transferred without notice, after which this version may no longer be accessible

Stability of near surface nitrogen vacancy centers using dielectric surface passivation

Authors: Ravi Kumar, Saksham Mahajan, Felix Donaldson, Siddharth Dhomkar, Hector J. Lancaster, Curran Kalha, Aysha A. Riaz, Yujiang Zhu, Christopher A. Howard, Anna Regoutz, John J. L. Morton

Abstract: We study the photo-physical stability of ensemble near-surface nitrogen vacancy (NV) centers in diamond under vacuum and air. The optically detected magnetic resonance contrast of the NV centers was measured following exposure to laser illumination, showing opposing trends in air compared to vacuum (increasing by up to 9% and drop** by up to 25%, respectively). Characterization using Raman and X… ▽ More We study the photo-physical stability of ensemble near-surface nitrogen vacancy (NV) centers in diamond under vacuum and air. The optically detected magnetic resonance contrast of the NV centers was measured following exposure to laser illumination, showing opposing trends in air compared to vacuum (increasing by up to 9% and drop** by up to 25%, respectively). Characterization using Raman and X-ray photoelectron spectroscopies suggests a surface reconstruction: In air, atmospheric oxygen adsorption on surface leads to an increase in NV- fraction, whereas in vacuum, net oxygen desorption increases the NV0 fraction. NV charge state switching is confirmed by photoluminescence spectroscopy. Deposition of ~ 2 nm alumina (Al2O3) over the diamond surface was shown to stabilize the NV charge state under illumination in either environment, attributed to a more stable surface electronegativity. The use of alumina coating on diamond is therefore a promising approach to improve the resilience of NV sensors. △ Less

Submitted 23 November, 2023; originally announced November 2023.

Rapid cryogenic characterisation of 1024 integrated silicon quantum dots

Authors: Edward J. Thomas, Virginia N. Ciriano-Tejel, David F. Wise, Domenic Prete, Mathieu de Kruijf, David J. Ibberson, Grayson M. Noah, Alberto Gomez-Saiz, M. Fernando Gonzalez-Zalba, Mark A. I. Johnson, John J. L. Morton

Abstract: Quantum computers are nearing the thousand qubit mark, with the current focus on scaling to improve computational performance. As quantum processors grow in complexity, new challenges arise such as the management of device variability and the interface with supporting electronics. Spin qubits in silicon quantum dots are poised to address these challenges with their proven control fidelities and po… ▽ More Quantum computers are nearing the thousand qubit mark, with the current focus on scaling to improve computational performance. As quantum processors grow in complexity, new challenges arise such as the management of device variability and the interface with supporting electronics. Spin qubits in silicon quantum dots are poised to address these challenges with their proven control fidelities and potential for compatibility with large-scale integration. Here, we demonstrate the integration of 1024 silicon quantum dots with on-chip digital and analogue electronics, all operating below 1 K. A high-frequency analogue multiplexer provides fast access to all devices with minimal electrical connections, enabling characteristic data across the quantum dot array to be acquired in just 5 minutes. We achieve this by leveraging radio-frequency reflectometry with state-of-the-art signal integrity, reaching a minimum integration time of 160 ps. Key quantum dot parameters are extracted by fast automated machine learning routines to assess quantum dot yield and understand the impact of device design. We find correlations between quantum dot parameters and room temperature transistor behaviour that may be used as a proxy for in-line process monitoring. Our results show how rapid large-scale studies of silicon quantum devices can be performed at lower temperatures and measurement rates orders of magnitude faster than current probing techniques, and form a platform for the future on-chip addressing of large scale qubit arrays. △ Less

Submitted 31 October, 2023; originally announced October 2023.

Comments: Main text: 14 pages, 8 figures, 1 table Supplementary: 8 pages, 6 figures

Measurement of cryoelectronics heating using a local quantum dot thermometer in silicon

Authors: Mathieu de Kruijf, Grayson M. Noah, Alberto Gomez-Saiz, John J. L. Morton, M. Fernando Gonzalez-Zalba

Abstract: Silicon technology offers the enticing opportunity for monolithic integration of quantum and classical electronic circuits. However, the power consumption levels of classical electronics may compromise the local chip temperature and hence the fidelity of qubit operations. Here, we utilize a quantum-dot-based thermometer embedded in an industry-standard silicon field-effect transistor (FET), to ass… ▽ More Silicon technology offers the enticing opportunity for monolithic integration of quantum and classical electronic circuits. However, the power consumption levels of classical electronics may compromise the local chip temperature and hence the fidelity of qubit operations. Here, we utilize a quantum-dot-based thermometer embedded in an industry-standard silicon field-effect transistor (FET), to assess the local temperature increase produced by an active FET placed in close proximity. We study the impact of both static and dynamic operation regimes. When the FET is operated statically, we find a power budget of 45 nW at 100 nm separation whereas at 216 $μ$m the power budget raises to 150 $μ$W. When operated dynamically, we observe negligible temperature increase for the switch frequencies tested up to 10 MHz. Our work describes a method to accurately map out the available power budget at a distance from a solid-state quantum processor and indicate under which conditions cryoelectronics circuits may allow the operation of hybrid quantum-classical systems. △ Less

Submitted 17 October, 2023; originally announced October 2023.

CMOS on-chip thermometry at deep cryogenic temperatures

Authors: Grayson M. Noah, Thomas Swift, Mathieu de Kruijf, Alberto Gomez-Saiz, John J. L. Morton, M. Fernando Gonzalez-Zalba

Abstract: Accurate on-chip temperature sensing is critical for the optimal performance of modern CMOS integrated circuits (ICs), to understand and monitor localized heating around the chip during operation. The development of quantum computers has stimulated much interest in ICs operating a deep cryogenic temperatures (typically 0.01 - 4 K), in which the reduced thermal conductivity of silicon and silicon o… ▽ More Accurate on-chip temperature sensing is critical for the optimal performance of modern CMOS integrated circuits (ICs), to understand and monitor localized heating around the chip during operation. The development of quantum computers has stimulated much interest in ICs operating a deep cryogenic temperatures (typically 0.01 - 4 K), in which the reduced thermal conductivity of silicon and silicon oxide, and the limited cooling power budgets make local on-chip temperature sensing even more important. Here, we report four different methods for on-chip temperature measurements native to complementary metal-oxide-semiconductor (CMOS) industrial fabrication processes. These include secondary and primary thermometry methods and cover conventional thermometry structures used at room temperature as well as methods exploiting phenomena which emerge at cryogenic temperatures, such as superconductivity and Coulomb blockade. We benchmark the sensitivity of the methods as a function of temperature and use them to measure local excess temperature produced by on-chip heating elements. Our results demonstrate thermometry methods that may be readily integrated in CMOS chips with operation from the milliKelivin range to room temperature. △ Less

Submitted 1 August, 2023; originally announced August 2023.

An elongated quantum dot as a distributed charge sensor

Authors: S. M. Patomäki, J. Williams, F. Berritta, C. Laine, M. A. Fogarty, R. C. C. Leon, J. Jussot, S. Kubicek, A. Chatterjee, B. Govoreanu, F. Kuemmeth, J. J. L. Morton, M. F. Gonzalez-Zalba

Abstract: Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs heterostructures to extend the range of spin-spin interactions. Here, we study a metal-oxide-semiconductor (MOS) device where two quantum dot arrays are separate… ▽ More Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs heterostructures to extend the range of spin-spin interactions. Here, we study a metal-oxide-semiconductor (MOS) device where two quantum dot arrays are separated by an elongated quantum dot (340 nm long, 50 nm wide). We monitor charge transitions of the elongated quantum dot by measuring radiofrequency single-electron currents to a reservoir to which we connect a lumped-element resonator. We operate the dot as a single electron box to achieve charge sensing of remote quantum dots in each array, separated by a distance of 510 nm. Simultaneous charge detection on both ends of the elongated dot demonstrates that the charge is well distributed across its nominal length, supported by the simulated quantum-mechanical electron density. Our results illustrate how single-electron boxes can be realised with versatile foot- prints that may enable novel and compact quantum processor layouts, offering distributed charge sensing in addition to the possibility of mediated coupling. △ Less

Submitted 4 January, 2023; originally announced January 2023.

Comments: 14 pages, 9 figures

Report number: NBI QDEV 2024

Journal ref: Phys. Rev. Applied 21, 054042 (2024)

Probing spin dynamics of ultra-thin van der Waals magnets via photon-magnon coupling

Authors: Christoph W. Zollitsch, Safe Khan, Vu Thanh Trung Nam, Ivan A. Verzhbitskiy, Dimitrios Sagkovits, James O'Sullivan, Oscar W. Kennedy, Mara Strungaru, Elton J. G. Santos, John J. L. Morton, Goki Eda, Hidekazu Kurebayashi

Abstract: Layered van der Waals (vdW) magnets can maintain a magnetic order even down to the single-layer regime and hold promise for integrated spintronic devices. While the magnetic ground state of vdW magnets was extensively studied, key parameters of spin dynamics, like the Gilbert dam**, crucial for designing ultra-fast spintronic devices, remains largely unexplored. Despite recent studies by optical… ▽ More Layered van der Waals (vdW) magnets can maintain a magnetic order even down to the single-layer regime and hold promise for integrated spintronic devices. While the magnetic ground state of vdW magnets was extensively studied, key parameters of spin dynamics, like the Gilbert dam**, crucial for designing ultra-fast spintronic devices, remains largely unexplored. Despite recent studies by optical excitation and detection, achieving spin wave control with microwaves is highly desirable, as modern integrated information technologies predominantly are operated with these. The intrinsically small numbers of spins, however, poses a major challenge to this. Here, we present a hybrid approach to detect spin dynamics mediated by photon-magnon coupling between high-Q superconducting resonators and ultra-thin flakes of Cr$_2$Ge$_2$Te$_6$ (CGT) as thin as 11\,nm. We test and benchmark our technique with 23 individual CGT flakes and extract an upper limit for the Gilbert dam** parameter. These results are crucial in designing on-chip integrated circuits using vdW magnets and offer prospects for probing spin dynamics of monolayer vdW magnets. △ Less

Submitted 28 April, 2023; v1 submitted 6 June, 2022; originally announced June 2022.

Fast high-fidelity single-shot readout of spins in silicon using a single-electron box

Authors: G. A. Oakes, V. N. Ciriano-Tejel, D. Wise, M. A. Fogarty, T. Lundberg, C. Lainé, S. Schaal, F. Martins, D. J. Ibberson, L. Hutin, B. Bertrand, N. Stelmashenko, J. A. W. Robinson, L. Ibberson, A. Hashim, I. Siddiqi, A. Lee, M. Vinet, C. G. Smith, J. J. L. Morton, M. F. Gonzalez-Zalba

Abstract: Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we… ▽ More Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we present two complementary demonstrations of fast high-fidelity single-shot readout of spins in silicon quantum dots using a compact, dispersive charge sensor: a radio-frequency single-electron box. The sensor, despite requiring fewer electrodes than conventional detectors, performs at the state-of-the-art achieving spin read-out fidelity of 99.2% in less than 6 $μ$s. We demonstrate that low-loss high-impedance resonators, highly coupled to the sensing dot, in conjunction with Josephson parametric amplification are instrumental in achieving optimal performance. We quantify the benefit of Pauli spin blockade over spin-dependent tunneling to a reservoir, as the spin-to-charge conversion mechanism in these readout schemes. Our results place dispersive charge sensing at the forefront of readout methodologies for scalable semiconductor spin-based quantum processors. △ Less

Submitted 13 March, 2022; originally announced March 2022.

Comments: Main: 9 pages, 4 figures, 1 table. Supplementary: 33 pages, 18 figures

Spin coherence of near-surface ionised $^{125}$Te$^+$ donors in silicon

Authors: Mantas Šimėnas, James O'Sullivan, Oscar W. Kennedy, Sen Lin, Sarah Fearn, Christoph W. Zollitsch, Gavin Dold, Tobias Schmitt, Peter Schüffelgen, Ren-Bao Liu, John J. L. Morton

Abstract: Impurity spins in crystal matrices are promising components in quantum technologies, particularly if they can maintain their spin properties when close to surfaces and material interfaces. Here, we investigate an attractive candidate for microwave-domain applications, the spins of group-VI Impurity spins in crystal matrices are promising components in quantum technologies, particularly if they can… ▽ More Impurity spins in crystal matrices are promising components in quantum technologies, particularly if they can maintain their spin properties when close to surfaces and material interfaces. Here, we investigate an attractive candidate for microwave-domain applications, the spins of group-VI Impurity spins in crystal matrices are promising components in quantum technologies, particularly if they can maintain their spin properties when close to surfaces and material interfaces. Here, we investigate an attractive candidate for microwave-domain applications, the spins of group-VI $^{125}$Te$^+$ donors implanted into natural Si at depths as shallow as 20~nm. We show that surface band-bending can be used to ionise such near-surface Te to spin-active Te$^+$ state, and that optical illumination can be used further to control the Te donor charge state. We examine spin activation yield, spin linewidth, relaxation ($T_1$) and coherence times (\ttwo) and show how a zero-field 3.5~GHz `clock transition' extends spin coherence times to over 1~ms, which is about an order of magnitude longer than other near-surface spin systems. △ Less

Submitted 2 June, 2022; v1 submitted 17 August, 2021; originally announced August 2021.

Reducing strain in heterogeneous quantum devices using atomic layer deposition

Authors: Oscar W. Kennedy, James O'Sullivan, Christoph W. Zollitsch, Chistopher N. Thomas, Stafford Withington, John J. L. Morton

Abstract: We investigated the use of dielectric layers produced by atomic layer deposition (ALD) as an approach to strain mitigation in composite silicon/superconductor devices operating at cryogenic temperatures. We show that the addition of an ALD layer acts to reduce the strain of spins closest to silicon/superconductor interface where strain is highest. We show that appropriately biasing our devices at… ▽ More We investigated the use of dielectric layers produced by atomic layer deposition (ALD) as an approach to strain mitigation in composite silicon/superconductor devices operating at cryogenic temperatures. We show that the addition of an ALD layer acts to reduce the strain of spins closest to silicon/superconductor interface where strain is highest. We show that appropriately biasing our devices at the hyperfine clock transition of bismuth donors in silicon, we can remove strain broadening and that the addition of ALD layers left $T_2$ (or temporal inhomogeneities) unchanged in these natural silicon devices. △ Less

Submitted 12 August, 2021; originally announced August 2021.

Spatially-resolved decoherence of donor spins in silicon strained by a metallic electrode

Authors: V. Ranjan, B. Albanese, E. Albertinale, E. Billaud, D. Flanigan, J. J. Pla, T. Schenkel, D. Vion, D. Esteve, E. Flurin, J. J. L. Morton, Y. M. Niquet, P. Bertet

Abstract: Electron spins are amongst the most coherent solid-state systems known, however, to be used in devices for quantum sensing and information processing applications, they must be typically placed near interfaces. Understanding and mitigating the impacts of such interfaces on the coherence and spectral properties of electron spins is critical to realize such applications, but is also challenging: inf… ▽ More Electron spins are amongst the most coherent solid-state systems known, however, to be used in devices for quantum sensing and information processing applications, they must be typically placed near interfaces. Understanding and mitigating the impacts of such interfaces on the coherence and spectral properties of electron spins is critical to realize such applications, but is also challenging: inferring such data from single-spin studies requires many measurements to obtain meaningful results, while ensemble measurements typically give averaged results that hide critical information. Here, we report a comprehensive study of the coherence of near-surface bismuth donor spins in 28-silicon at millikelvin temperatures. In particular, we use strain-induced frequency shifts caused by a metallic electrode to make spatial maps of spin coherence as a function of depth and position relative to the electrode. By measuring magnetic-field-insensitive clock transitions we separate magnetic noise caused by surface spins from charge noise. Our results include quantitative models of the strain-split spin resonance spectra and extraction of paramagnetic impurity concentrations at the silicon surface. The interplay of these decoherence mechanisms for such near-surface electron spins is critical for their application in quantum technologies, while the combination of the strain splitting and clock transition extends the coherence lifetimes by up to two orders of magnitude, reaching up to 300 ms at a mean depth of only 100nm. The technique we introduce here to spatially map coherence in near-surface ensembles is directly applicable to other spin systems of active interest, such as defects in diamond, silicon carbide, and rare earth ions in optical crystals. △ Less

Submitted 12 January, 2021; originally announced January 2021.

Comments: 16 pages, 11 figures

Journal ref: Phys. Rev. X 11, 031036 (2021)

Automatic virtual voltage extraction of a 2x2 array of quantum dots with machine learning

Authors: Giovanni A. Oakes, **gyu Duan, John J. L. Morton, Alpha Lee, Charles G. Smith, M. Fernando Gonzalez Zalba

Abstract: Spin qubits in quantum dots are a compelling platform for fault-tolerant quantum computing due to the potential to fabricate dense two-dimensional arrays with nearest neighbour couplings, a requirement to implement the surface code. However, due to the proximity of the surface gate electrodes, cross-coupling capacitances can be substantial, making it difficult to control each quantum dot independe… ▽ More Spin qubits in quantum dots are a compelling platform for fault-tolerant quantum computing due to the potential to fabricate dense two-dimensional arrays with nearest neighbour couplings, a requirement to implement the surface code. However, due to the proximity of the surface gate electrodes, cross-coupling capacitances can be substantial, making it difficult to control each quantum dot independently. Increasing the number of quantum dots increases the complexity of the calibration process, which becomes impractical to do heuristically. Inspired by recent demonstrations of industrial-grade silicon quantum dot bilinear arrays, we develop a theoretical framework to mitigate the effect of cross-capacitances in 2x2 arrays of quantum dots, that can be directly extended to 2xN arrays. The method is based on extracting the gradients in gate voltage space of different charge transitions in multiple two-dimensional charge stability diagrams to determine the system's virtual voltages. To automate the process, we train an ensemble of regression models to extract the gradients from a Hough transformation of a stability diagram and validate the algorithm on simulated and experimental data of a 2x2 quantum dot array. Our method provides a completely automated tool to mitigate the effect of cross capacitances, which could be used to study cross capacitance variability across QDs in large bilinear arrays △ Less

Submitted 26 May, 2021; v1 submitted 7 December, 2020; originally announced December 2020.

Comments: 11 pages, 11 figures

Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire

Authors: **gyu Duan, Janne S. Lehtinen, Michael A. Fogarty, Simon Schaal, Michelle Lam, Alberto Ronzani, Andrey Shchepetov, Panu Koppinen, Mika Prunnila, Fernando Gonzalez-Zalba, John J. L. Morton

Abstract: We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to dem… ▽ More We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition(IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160(100) $μ$s for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable holes spins in silicon. △ Less

Submitted 29 September, 2020; originally announced September 2020.

Comments: 5 pages, 4 figures

Spin resonance linewidths of bismuth donors in silicon coupled to planar microresonators

Authors: James O'Sullivan, Oscar W. Kennedy, Christoph W. Zollitsch, Mantas Šimėnas, Christopher N. Thomas, Leonid V. Abdurakhimov, Stafford Withington, John J. L. Morton

Abstract: Ensembles of bismuth donor spins in silicon are promising storage elements for microwave quantum memories due to their long coherence times which exceed seconds. Operating an efficient quantum memory requires achieving critical coupling between the spin ensemble and a suitable high-quality factor resonator -- this in turn requires a thorough understanding of the lineshapes for the relevant spin re… ▽ More Ensembles of bismuth donor spins in silicon are promising storage elements for microwave quantum memories due to their long coherence times which exceed seconds. Operating an efficient quantum memory requires achieving critical coupling between the spin ensemble and a suitable high-quality factor resonator -- this in turn requires a thorough understanding of the lineshapes for the relevant spin resonance transitions, particularly considering the influence of the resonator itself on line broadening. Here, we present pulsed electron spin resonance measurements of ensembles of bismuth donors in natural silicon, above which niobium superconducting resonators have been patterned. By studying spin transitions across a range of frequencies and fields we identify distinct line broadening mechanisms, and in particular those which can be suppressed by operating at magnetic-field-insensitive `clock transitions'. Given the donor concentrations and resonator used here, we measure a cooperativity $C\sim 0.2$ and based on our findings we discuss a route to achieve unit cooperativity, as required for a quantum memory. △ Less

Submitted 20 November, 2020; v1 submitted 15 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. Applied 14, 064050 (2020)

Remote capacitive sensing in two-dimension quantum-dot arrays

Authors: **gyu Duan, Michael A. Fogarty, James Williams, Louis Hutin, Maud Vinet, John J. L. Morton

Abstract: We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon nanowire naturally produces a $2\times n$ bilinear array of quantum dots along a single nanowire. We begin by studying the capacitive coupling of quantum dots w… ▽ More We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon nanowire naturally produces a $2\times n$ bilinear array of quantum dots along a single nanowire. We begin by studying the capacitive coupling of quantum dots within such a 2$\times$2 array, and then show how such couplings can be extended across two parallel silicon nanowires coupled together by shared, electrically isolated, 'floating' electrodes. With one quantum dot operating as a single-electron-box sensor, the floating gate serves to enhance the charge sensitivity range, enabling it to detect charge state transitions in a separate silicon nanowire. By comparing measurements from multiple devices we illustrate the impact of the floating gate by quantifying both the charge sensitivity decay as a function of dot-sensor separation and configuration within the dual-nanowire structure. △ Less

Submitted 9 September, 2020; v1 submitted 29 May, 2020; originally announced May 2020.

Comments: 9 pages, 3 figures, 35 cites and supplementary

Multimode storage of quantum microwave fields in electron spins over 100 ms

Authors: V. Ranjan, J. O'Sullivan, E. Albertinale, B. Albanese, T. Chanelière, T. Schenkel, D. Vion, D. Esteve, E. Flurin, J. J. L. Morton, P. Bertet

Abstract: A long-lived multi-mode qubit register is an enabling technology for modular quantum computing architectures. For interfacing with superconducting qubits, such a quantum memory should be able to store incoming quantum microwave fields at the single-photon level for long periods of time, and retrieve them on-demand. Here, we demonstrate the partial absorption of a train of weak microwave fields in… ▽ More A long-lived multi-mode qubit register is an enabling technology for modular quantum computing architectures. For interfacing with superconducting qubits, such a quantum memory should be able to store incoming quantum microwave fields at the single-photon level for long periods of time, and retrieve them on-demand. Here, we demonstrate the partial absorption of a train of weak microwave fields in an ensemble of bismuth donor spins in silicon, their storage for 100 ms, and their retrieval, using a Hahn-echo-like protocol. The long storage time is obtained by biasing the bismuth donors at a clock transition. Phase coherence and quantum statistics are preserved in the storage. △ Less

Submitted 19 May, 2020; originally announced May 2020.

Comments: 11 pages including Supplementary

Journal ref: Phys. Rev. Lett. 125, 210505 (2020)

Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling

Authors: V. N. Ciriano-Tejel, M. A. Fogarty, S. Schaal, L. Hutin, B. Bertrand, Lisa Ibberson, M. F. Gonzalez-Zalba, J. Li, Y. -M. Niquet, M. Vinet, J. J. L. Morton

Abstract: Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, w… ▽ More Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, we employ spin-dependent tunneling combined with a low-footprint single-lead quantum dot charge sensor, measured using radiofrequency gate reflectometry. We demonstrate spin readout in two devices using this technique, obtaining valley splittings in the range 0.5-0.7 meV using excited state spectroscopy, and measure a maximum electron spin relaxation time ($T_1$) of $9 \pm 3$ s at 1 Tesla. These long lifetimes indicate the silicon nanowire geometry and fabrication processes employed here show a great deal of promise for qubit devices, while the spin-readout method demonstrated here is well-suited to a variety of scalable architectures. △ Less

Submitted 12 June, 2020; v1 submitted 15 May, 2020; originally announced May 2020.

Comments: 8 pages, 4 figures, 57 cites. v3: added acknowledges

Journal ref: PRX Quantum 2, 010353 (2021)

Using deep learning to understand and mitigate the qubit noise environment

Authors: David F. Wise, John J. L. Morton, Siddharth Dhomkar

Abstract: Understanding the spectrum of noise acting on a qubit can yield valuable information about its environment, and crucially underpins the optimization of dynamical decoupling protocols that can mitigate such noise. However, extracting accurate noise spectra from typical time-dynamics measurements on qubits is intractable using standard methods. Here, we propose to address this challenge using deep l… ▽ More Understanding the spectrum of noise acting on a qubit can yield valuable information about its environment, and crucially underpins the optimization of dynamical decoupling protocols that can mitigate such noise. However, extracting accurate noise spectra from typical time-dynamics measurements on qubits is intractable using standard methods. Here, we propose to address this challenge using deep learning algorithms, leveraging the remarkable progress made in the field of image recognition, natural language processing, and more recently, structured data. We demonstrate a neural network based methodology that allows for extraction of the noise spectrum associated with any qubit surrounded by an arbitrary bath, with significantly greater accuracy than the current methods of choice. The technique requires only a two-pulse echo decay curve as input data and can further be extended either for constructing customized optimal dynamical decoupling protocols or for obtaining critical qubit attributes such as its proximity to the sample surface. Our results can be applied to a wide range of qubit platforms, and provide a framework for improving qubit performance with applications not only in quantum computing and nanoscale sensing but also in material characterization techniques such as magnetic resonance. △ Less

Submitted 11 January, 2021; v1 submitted 3 May, 2020; originally announced May 2020.

Comments: Accepted for publication, 15 pages, 10 figures

Journal ref: PRX Quantum 2, 010316 (2021)

Tuning high-Q superconducting resonators by magnetic field reorientation

Authors: Christoph W. Zollitsch, James O'Sullivan, Oscar W. Kennedy, Gavin Dold, John J. L. Morton

Abstract: Superconducting resonators interfaced with paramagnetic spin ensembles are used to increase the sensitivity of electron spin resonance experiments and are key elements of microwave quantum memories. Certain spin systems that are promising for such quantum memories possess 'sweet spots' at particular combinations of magnetic fields and frequencies, where spin coherence times or linewidths become pa… ▽ More Superconducting resonators interfaced with paramagnetic spin ensembles are used to increase the sensitivity of electron spin resonance experiments and are key elements of microwave quantum memories. Certain spin systems that are promising for such quantum memories possess 'sweet spots' at particular combinations of magnetic fields and frequencies, where spin coherence times or linewidths become particularly favorable. In order to be able to couple high-Q superconducting resonators to such specific spin transitions, it is necessary to be able to tune the resonator frequency under a constant magnetic field amplitude. Here, we demonstrate a high quality, magnetic field resilient superconducting resonator, using a 3D vector magnet to continuously tune its resonance frequency by adjusting the orientation of the magnetic field. The resonator maintains a quality factor of $> 10^5$ up to magnetic fields of 2.6 T, applied predominantly in the plane of the superconductor. We achieve a continuous tuning of up to 30 MHz by rotating the magnetic field vector, introducing a component of 5 mT perpendicular to the superconductor. △ Less

Submitted 24 January, 2020; v1 submitted 24 September, 2019; originally announced September 2019.

Comments: 4 pages, 3 figures

Fast gate-based readout of silicon quantum dots using Josephson parametric amplification

Authors: S. Schaal, I. Ahmed, J. A. Haigh, L. Hutin, B. Bertrand, S. Barraud, M. Vinet, C. -M. Lee, N. Stelmashenko, J. W. A. Robinson, J. Y. Qiu, S. Hacohen-Gourgy, I. Siddiqi, M. F. Gonzalez-Zalba, J. J. L. Morton

Abstract: Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast-feedback in error correction protocols. Here, we combine radio-… ▽ More Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast-feedback in error correction protocols. Here, we combine radio-frequency gate-based sensing at 622 MHz with a Josephson parametric amplifier (JPA), that operates in the 500-800 MHz band, to reduce the integration time required to read the state of a silicon double quantum dot formed in a nanowire transistor. Based on our achieved signal-to-noise ratio (SNR), we estimate that singlet-triplet single-shot readout with an average fidelity of 99.7% could be performed in 1 $μ$s, well-below the requirements for fault-tolerant readout and 30 times faster than without the JPA. Additionally, the JPA allows operation at a lower RF power while maintaining identical SNR. We determine a noise temperature of 200 mK with a contribution from the JPA (25%), cryogenic amplifier (25%) and the resonator (50%), showing routes to further increase the read-out speed. △ Less

Submitted 23 July, 2019; v1 submitted 22 July, 2019; originally announced July 2019.

Comments: Wrong figure reference corrected

Journal ref: Phys. Rev. Lett. 124, 067701 (2020)

Storing quantum information in spins and high-sensitivity ESR

Authors: John J. L. Morton, Patrice Bertet

Abstract: Quantum information, encoded within the states of quantum systems, represents a novel and rich form of information which has inspired new types of computers and communications systems. Many diverse electron spin systems have been studied with a view to storing quantum information, including molecular radicals, point defects and impurities in inorganic systems, and quantum dots in semiconductor dev… ▽ More Quantum information, encoded within the states of quantum systems, represents a novel and rich form of information which has inspired new types of computers and communications systems. Many diverse electron spin systems have been studied with a view to storing quantum information, including molecular radicals, point defects and impurities in inorganic systems, and quantum dots in semiconductor devices. In these systems, spin coherence times can exceed seconds, single spins can be addressed through electrical and optical methods, and new spin systems with advantageous properties continue to be identified. Spin ensembles strongly coupled to microwave resonators can, in principle, be used to store the coherent states of single microwave photons, enabling so-called microwave quantum memories. We discuss key requirements in realising such memories, including considerations for superconducting resonators whose frequency can be tuned onto resonance with the spins. Finally, progress towards microwave quantum memories and other developments in the field of superconducting quantum devices are being used to push the limits of sensitivity of inductively-detected electron spin resonance. The state-of-the-art currently stands at around 65 spins per root-Hz, with prospects to scale down to even fewer spins. △ Less

Submitted 5 June, 2019; originally announced June 2019.

Journal ref: Journal of Magnetic Resonance 287, 128-139 (2018)

Electron Spin Resonance of P Donors in Isotopically Purified Si Detected by Contactless Photoconductivity

Authors: Philipp Ross, Brendon C. Rose, Cheuk C. Lo, Mike L. W. Thewalt, Alexei M. Tyryshkin, Stephen A. Lyon, John J. L. Morton

Abstract: Coherence times of electron spins bound to phosphorus donors have been measured, using a standard Hahn echo technique, to be up to 20 ms in isotopically pure silicon with [P]$ = 10^{14}$ cm$^{-3}$ and at temperatures $\leq 4 $K. Although such times are exceptionally long for electron spins in the solid state, they are nevertheless limited by donor electron spin-spin interactions. Suppressing such… ▽ More Coherence times of electron spins bound to phosphorus donors have been measured, using a standard Hahn echo technique, to be up to 20 ms in isotopically pure silicon with [P]$ = 10^{14}$ cm$^{-3}$ and at temperatures $\leq 4 $K. Although such times are exceptionally long for electron spins in the solid state, they are nevertheless limited by donor electron spin-spin interactions. Suppressing such interactions requires even lower donor concentrations, which lie below the detection limit for typical electron spin resonance (ESR) spectrometers. Here we describe an alternative method for phosphorus donor ESR detection, exploiting the spin-to-charge conversion provided by the optical donor bound exciton transition. We characterise the method and its dependence on laser power and use it to measure a coherence time of $T_2 = 130 $ms for one of the purest silicon samples grown to-date ([P]$ = 5\times 10^{11} $cm$^{-3}$). We then benchmark this result using an alternative application of the donor bound exciton transition: optically polarising the donor spins before using conventional ESR detection at 1.7~K for a sample with [P]$ = 4\times10^{12} $cm$^{-3}$, and measuring in this case a $T_2$ of 350 ms. △ Less

Submitted 28 December, 2020; v1 submitted 4 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. Applied 11, 054014 (2019)

High-cooperativity coupling of a rare-earth spin ensemble to a superconducting resonator using yttrium orthosilicate as a substrate

Authors: Gavin Dold, Christoph W. Zollitsch, James O'Sullivan, Sacha Welinski, Alban Ferrier, Philippe Goldner, S. E. de Graaf, Tobias Lindström, John J. L. Morton

Abstract: Yttrium orthosilicate (Y$_2$SiO$_5$, or YSO) has proved to be a convenient host for rare-earth ions used in demonstrations of microwave quantum memories and optical memories with microwave interfaces, and shows promise for coherent microwave--optical conversion owing to its favourable optical and spin properties. The strong coupling required by such microwave applications could be achieved using s… ▽ More Yttrium orthosilicate (Y$_2$SiO$_5$, or YSO) has proved to be a convenient host for rare-earth ions used in demonstrations of microwave quantum memories and optical memories with microwave interfaces, and shows promise for coherent microwave--optical conversion owing to its favourable optical and spin properties. The strong coupling required by such microwave applications could be achieved using superconducting resonators patterned directly on Y$_2$SiO$_5$, and hence we investigate here the use of Y$_2$SiO$_5$ as an alternative to sapphire or silicon substrates for superconducting hybrid device fabrication. A NbN resonator with frequency 6.008 GHz and low power quality factor $Q \approx 400000$ was fabricated on a Y$_2$SiO$_5$ substrate doped with isotopically enriched Nd$^{145}$. Measurements of dielectric loss yield a loss-tangent $\tanδ= 4 \times 10^{-6}$, comparable to sapphire. Electron spin resonance (ESR) measurements performed using the resonator show the characteristic angular dependence expected from the anisotropic Nd$^{145}$ spin, and the coupling strength between resonator and electron spins is in the high cooperativity regime ($C = 30$). These results demonstrate Y$_2$SiO$_5$ as an excellent substrate for low-loss, high-Q microwave resonators, especially in applications for coupling to optically-accessible rare earth spins. △ Less

Submitted 25 April, 2019; v1 submitted 10 January, 2019; originally announced January 2019.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. Applied 11, 054082 (2019)

A CMOS dynamic random access architecture for radio-frequency readout of quantum devices

Authors: S. Schaal, A. Rossi, S. Barraud, J. J. L. Morton, M. F. Gonzalez-Zalba

Abstract: Quantum computing technology is maturing at a relentless pace, yet individual quantum bits are wired one by one. As quantum processors become more complex, they require efficient interfaces to deliver signals for control and readout while kee** the number of inputs manageable. Digital electronics offers solutions to the scaling challenge by leveraging established industrial infrastructure and ap… ▽ More Quantum computing technology is maturing at a relentless pace, yet individual quantum bits are wired one by one. As quantum processors become more complex, they require efficient interfaces to deliver signals for control and readout while kee** the number of inputs manageable. Digital electronics offers solutions to the scaling challenge by leveraging established industrial infrastructure and applying it to integrate silicon-based quantum devices with conventional CMOS circuits. Here, we combine both technologies at milikelvin temperatures and demonstrate the building blocks of a dynamic random access architecture for efficient readout of complex quantum circuits. Our circuit is divided into cells, each containing a CMOS quantum dot (QD) and a field-effect transistor that enables selective readout of the QD, as well as charge storage on the QD gate similar to 1T-1C DRAM technology. We show dynamic readout of two cells by interfacing them with a single radio-frequency resonator. Our results demonstrate a path to reducing the number of input lines per qubit and enable addressing of large-scale device arrays. △ Less

Submitted 11 September, 2018; originally announced September 2018.

Journal ref: Nature Electronics (2019)

Dissipative discrete time crystals

Authors: James O'Sullivan, Oliver Lunt, Christoph W. Zollitsch, M. L. W. Thewalt, John J. L. Morton, Arijeet Pal

Abstract: Periodically driven quantum systems host a range of non-equilibrium phenomena which are unrealizable at equilibrium. Discrete time-translational symmetry in a periodically driven many-body system can be spontaneously broken to form a discrete time crystal, a putative quantum phase of matter. We present the observation of discrete time crystalline order in a driven system of paramagnetic $P$ -donor… ▽ More Periodically driven quantum systems host a range of non-equilibrium phenomena which are unrealizable at equilibrium. Discrete time-translational symmetry in a periodically driven many-body system can be spontaneously broken to form a discrete time crystal, a putative quantum phase of matter. We present the observation of discrete time crystalline order in a driven system of paramagnetic $P$ -donor impurities in isotopically enriched $^{28}Si$ cooled below $10$ K. The observations exhibit a stable subharmonic peak at half the drive frequency which remains pinned even in the presence of pulse error, a signature of DTC order. We propose a theoretical model based on the paradigmatic central spin model which is in good agreement with experimental observations, and investigate the role of dissipation in the stabilisation of the DTC. Both experiment and theory indicate that the order in this system is primarily a dissipative effect, and which persists in the presence of spin-spin interactions. We present a theoretical phase diagram as a function of interactions and dissipation for the central spin model which is consistent with the experiments. This opens up questions about the interplay of coherent interaction and dissipation for time-translation symmetry breaking in many-body Floquet systems. △ Less

Submitted 8 June, 2019; v1 submitted 25 July, 2018; originally announced July 2018.

Comments: 7+3 pages, 6 figures, Added new phase diagram and detailed comparison with experiments

Tunable Nb superconducting resonators based upon a Ne-FIB-fabricated constriction nanoSQUID

Authors: Oscar W. Kennedy, Jonathan Burnett, Jonathan C. Fenton, Nicolas G. N. Constantino, Paul A. Warburton, John J. L. Morton, Eva Dupont-Ferrier

Abstract: Hybrid superconducting--spin systems offer the potential to combine highly coherent atomic quantum systems with the scalability of superconducting circuits. To fully exploit this potential requires a high quality-factor microwave resonator, tunable in frequency and able to operate at magnetic fields optimal for the spin system. Such magnetic fields typically rule out conventional Al-based Josephso… ▽ More Hybrid superconducting--spin systems offer the potential to combine highly coherent atomic quantum systems with the scalability of superconducting circuits. To fully exploit this potential requires a high quality-factor microwave resonator, tunable in frequency and able to operate at magnetic fields optimal for the spin system. Such magnetic fields typically rule out conventional Al-based Josephson junction devices that have previously been used for tunable high-$Q$ microwave resonators. The larger critical field of niobium (Nb) allows microwave resonators with large field resilience to be fabricated. Here, we demonstrate how constriction-type weak links, patterned in parallel into the central conductor of a Nb coplanar resonator using a neon focused ion beam (FIB), can be used to implement a frequency-tunable resonator. We study transmission through two such devices and show how they realise high quality factor, tunable, field resilient devices which hold promise for future applications coupling to spin systems. △ Less

Submitted 7 January, 2019; v1 submitted 2 July, 2018; originally announced July 2018.

Journal ref: Phys. Rev. Applied 11, 014006 (2019)

Primary thermometry of a single reservoir using cyclic electron tunneling in a CMOS transistor

Authors: Imtiaz Ahmed, Anasua Chatterjee, Sylvain Barraud, John J. L. Morton, James A. Haigh, M. Fernando Gonzalez-Zalba

Abstract: Temperature is a fundamental parameter in the study of physical phenomena. At the nanoscale, local temperature differences can be harnessed to design novel thermal nanoelectronic devices or test quantum thermodynamical concepts. Determining temperature locally is hence of particular relevance. Here, we present a primary electron thermometer that allows probing the local temperature of a single ele… ▽ More Temperature is a fundamental parameter in the study of physical phenomena. At the nanoscale, local temperature differences can be harnessed to design novel thermal nanoelectronic devices or test quantum thermodynamical concepts. Determining temperature locally is hence of particular relevance. Here, we present a primary electron thermometer that allows probing the local temperature of a single electron reservoir in single-electron devices. The thermometer is based on cyclic electron tunneling between a system with discrete energy levels and a single electron reservoir. When driven at a finite rate, close to a charge degeneracy point, the system behaves like a variable capacitor whose magnitude and line-shape varies with temperature. In this experiment, we demonstrate this type of thermometer using a quantum dot in a CMOS nanowire transistor. We drive cyclic electron tunneling by embedding the device in a radio-frequency resonator which in turn allows us to read the thermometer dispersively. We find that the full width at half maximum of the resonator phase response depends linearly with temperature via well known physical law by using the ratio $k_\text{B}/e$ between the Boltzmann constant and the electron charge. Overall, the thermometer shows potential for local probing of fast heat dynamics in nanoelectronic devices and for seamless integration with silicon-based quantum circuits. △ Less

Submitted 30 May, 2018; v1 submitted 9 May, 2018; originally announced May 2018.

Journal ref: Communications Physics volume 1, Article number: 66 (2018)

Magnon-photon coupling in a non-collinear magnetic insulator Cu$_2$OSeO$_3$

Authors: L. V. Abdurakhimov, S. Khan, N. A. Panjwani, J. D. Breeze, M. Mochizuki, S. Seki, Y. Tokura, J. J. L. Morton, H. Kurebayashi

Abstract: Anticrossing behavior between magnons in a non-collinear chiral magnet Cu$_2$OSeO$_3$ and a two-mode X-band microwave resonator was studied in the temperature range 5-100K. In the field-induced ferrimagnetic phase, we observed a strong coupling regime between magnons and two microwave cavity modes with a cooperativity reaching 3600. In the conical phase, cavity modes are dispersively coupled to a… ▽ More Anticrossing behavior between magnons in a non-collinear chiral magnet Cu$_2$OSeO$_3$ and a two-mode X-band microwave resonator was studied in the temperature range 5-100K. In the field-induced ferrimagnetic phase, we observed a strong coupling regime between magnons and two microwave cavity modes with a cooperativity reaching 3600. In the conical phase, cavity modes are dispersively coupled to a fundamental helimagnon mode, and we demonstrate that the magnetic phase diagram of Cu$_2$OSeO$_3$ can be reconstructed from the measurements of the cavity resonance frequency. In the helical phase, a hybridized state of a higher-order helimagnon mode and a cavity mode - a helimagnon polariton - was found. Our results reveal a new class of magnetic systems where strong coupling of microwave photons to non-trivial spin textures can be observed. △ Less

Submitted 14 February, 2019; v1 submitted 20 February, 2018; originally announced February 2018.

Comments: revised version (including details on the mechanism of helimagnon-photon coupling), main text (5 pages, 3 figures) + supplemental materials (part 1 and part 2)

Journal ref: Phys. Rev. B 99, 140401 (2019)

Linear hyperfine tuning of donor spins in silicon using hydrostatic strain

Authors: John Mansir, Pierandrea Conti, Zai** Zeng, Jarryd J. Pla, Patrice Bertet, Michael W. Swift, Chris G. Van de Walle, Mike L. W. Thewalt, Benoit Sklenard, Yann-Michel Niquet, John J. L. Morton

Abstract: We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains $|\varepsilon| < 10^{-5}$. Through both tight-binding… ▽ More We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains $|\varepsilon| < 10^{-5}$. Through both tight-binding and first principles calculations we find that these shifts arise from a linear tuning of the donor hyperfine interaction term by the hydrostatic component of strain and achieve semi-quantitative agreement with the experimental values. Our results provide a framework for making quantitative predictions of donor spins in silicon nanostructures, such as those being used to develop silicon-based quantum processors and memories. The strong spin-strain coupling we measure (up to 150~GHz per strain, for Bi-donors in Si), offers a method for donor spin tuning --- shifting Bi donor electron spins by over a linewidth with a hydrostatic strain of order $10^{-6}$ --- as well as opportunities for coupling to mechanical resonators. △ Less

Submitted 23 March, 2018; v1 submitted 2 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. Lett. 120, 167701 (2018)

A silicon-based single-electron interferometer coupled to a fermionic sea

Authors: Anasua Chatterjee, Sergey N. Shevchenko, Sylvain Barraud, Ruben M. Otxoa, Franco Nori, John J. L. Morton, M. Fernando Gonzalez-Zalba

Abstract: We study Landau-Zener-Stueckelberg-Majorana (LZSM) interferometry under the influence of projective readout using a charge qubit tunnel-coupled to a fermionic sea. This allows us to characterise the coherent charge qubit dynamics in the strong-driving regime. The device is realised within a silicon complementary metal-oxide-semiconductor (CMOS) transistor. We first read out the charge state of the… ▽ More We study Landau-Zener-Stueckelberg-Majorana (LZSM) interferometry under the influence of projective readout using a charge qubit tunnel-coupled to a fermionic sea. This allows us to characterise the coherent charge qubit dynamics in the strong-driving regime. The device is realised within a silicon complementary metal-oxide-semiconductor (CMOS) transistor. We first read out the charge state of the system in a continuous non-demolition manner by measuring the dispersive response of a high-frequency electrical resonator coupled to the quantum system via the gate. By performing multiple fast passages around the qubit avoided crossing, we observe a multi-passage LZSM interferometry pattern. At larger driving amplitudes, a projective measurement to an even-parity charge state is realised, showing a strong enhancement of the dispersive readout signal. At even larger driving amplitudes, two projective measurements are realised within the coherent evolution resulting in the disappearance of the interference pattern. Our results demonstrate a way to increase the state readout signal of coherent quantum systems and replicate single-electron analogues of optical interferometry within a CMOS transistor. △ Less

Submitted 31 August, 2017; originally announced August 2017.

Journal ref: Phys. Rev. B 97, 045405 (2018)

Inductive-detection electron-spin resonance spectroscopy with $\mathbf{65}\,$spins$/\sqrt{\text{Hz}}$ sensitivity

Authors: S. Probst, A. Bienfait, P. Campagne-Ibarcq, J. J. Pla, B. Albanese, J. F. Da Silva Barbosa, T. Schenkel, D. Vion, D. Esteve, K. Mølmer, J. J. L. Morton, R. Heeres, P. Bertet

Abstract: We report electron spin resonance spectroscopy measurements performed at millikelvin temperatures in a custom-built spectrometer comprising a superconducting micro-resonator at $7$ GHz and a Josephson parametric amplifier. Owing to the small ${\sim}10^{-12}λ^3$ magnetic resonator mode volume and to the low noise of the parametric amplifier, the spectrometer sensitivity reaches $260\pm40$ spins$/$e… ▽ More We report electron spin resonance spectroscopy measurements performed at millikelvin temperatures in a custom-built spectrometer comprising a superconducting micro-resonator at $7$ GHz and a Josephson parametric amplifier. Owing to the small ${\sim}10^{-12}λ^3$ magnetic resonator mode volume and to the low noise of the parametric amplifier, the spectrometer sensitivity reaches $260\pm40$ spins$/$echo and $65\pm10$ $\mathrm{spins}/\sqrt{\text{Hz}}$, respectively. △ Less

Submitted 30 August, 2017; originally announced August 2017.

Comments: 6 pages, 4 figures

Journal ref: Appl. Phys. Lett. 111, 202604 (2017)

Conditional dispersive readout of a CMOS quantum dot via an integrated transistor circuit

Authors: S. Schaal, S. Barraud, J. J. L. Morton, M. F. Gonzalez-Zalba

Abstract: Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offer potential solutions to wiring and layout challenges. Integrating classical and quantum d… ▽ More Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offer potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-transistor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large scale circuits. Here we demonstrate the integration of a single-electron charge storage CMOS quantum dot with a CMOS transistor for control of the readout via gate-based dispersive sensing using a lumped element $LC$ resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully-depleted silicon-on-insulator technology. We obtain a charge sensitivity of $δq=165\, μe \mathrm{Hz}^{-1/2}$ when the quantum dot readout is enabled by the control FET. Additionally, we observe a single-electron retention time of the order of a second when storing a single-electron charge on the quantum dot at milli-Kelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive qubit readout in CMOS technology opening the path for the development of an all-silicon quantum-classical processor. △ Less

Submitted 14 August, 2017; originally announced August 2017.

Journal ref: Phys. Rev. Applied 9, 054016 (2018)

Magnetic resonance with squeezed microwaves

Authors: A. Bienfait, P. Campagne-Ibarcq, A. Holm-Kiilerich, X. Zhou, S. Probst, J. J. Pla, T. Schenkel, D. Vion, D. Esteve, J. J. L. Morton, K. Moelmer, P. Bertet

Abstract: Vacuum fluctuations of the electromagnetic field set a fundamental limit to the sensitivity of a variety of measurements, including magnetic resonance spectroscopy. We report the use of squeezed microwave fields, which are engineered quantum states of light for which fluctuations in one field quadrature are reduced below the vacuum level, to enhance the detection sensitivity of an ensemble of elec… ▽ More Vacuum fluctuations of the electromagnetic field set a fundamental limit to the sensitivity of a variety of measurements, including magnetic resonance spectroscopy. We report the use of squeezed microwave fields, which are engineered quantum states of light for which fluctuations in one field quadrature are reduced below the vacuum level, to enhance the detection sensitivity of an ensemble of electronic spins at millikelvin temperatures.} By shining a squeezed vacuum state on the input port of a microwave resonator containing the spins, we obtain a $1.2$\,dB noise reduction at the spectrometer output compared to the case of a vacuum input. This result constitutes a proof of principle of the application of quantum metrology to magnetic resonance spectroscopy. △ Less

Submitted 27 October, 2017; v1 submitted 11 October, 2016; originally announced October 2016.

Comments: Main text : 19 pages, 6 figures. Followed by a 18-pages Supplementary Information section, which includes 6 Supplementary Figures

Journal ref: Phys. Rev. X 7, 041011 (2017)

Strain-induced spin resonance shifts in silicon devices

Authors: J. J. Pla, A. Bienfait, G. Pica, J. Mansir, F. A. Mohiyaddin, Z. Zeng, Y. M. Niquet, A. Morello, T. Schenkel, J. J. L. Morton, P. Bertet

Abstract: In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin line-widths and it is therefore important to study, understand and model such effects in order to better predict d… ▽ More In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin line-widths and it is therefore important to study, understand and model such effects in order to better predict device performance. Here we investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminium micro-resonator has been fabricated. The on-chip resonator provides two functions: first, it produces local strain in the silicon due to the larger thermal contraction of the aluminium, and second, it enables sensitive electron spin resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations we are able to reconstruct key features of our experiments, including the electron spin resonance spectra. Our results are consistent with a recently discovered mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain. △ Less

Submitted 9 January, 2018; v1 submitted 25 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. Applied 9, 044014 (2018)

Nuclear spin decoherence of neutral $^{31}$P donors in silicon: Effect of environmental $^{29}$Si nuclei

Authors: Evan S. Petersen, Alexei M. Tyryshkin, John J. L. Morton, Eisuke Abe, Shinichi Tojo, Kohei M. Itoh, Mike L. W. Thewalt, Stephen A. Lyon

Abstract: Spectral diffusion arising from $^{29}$Si nuclear spin flip-flops, known to be a primary source of electron spin decoherence in silicon, is also predicted to limit the coherence times of neutral donor nuclear spins in silicon. Here, the impact of this mechanism on $^{31}$P nuclear spin coherence is measured as a function of $^{29}$Si concentration using X-band pulsed electron nuclear double resona… ▽ More Spectral diffusion arising from $^{29}$Si nuclear spin flip-flops, known to be a primary source of electron spin decoherence in silicon, is also predicted to limit the coherence times of neutral donor nuclear spins in silicon. Here, the impact of this mechanism on $^{31}$P nuclear spin coherence is measured as a function of $^{29}$Si concentration using X-band pulsed electron nuclear double resonance (ENDOR). The $^{31}$P nuclear spin echo decays show that decoherence is controlled by $^{29}$Si flip-flops resulting in both fast (exponential) and slow (non-exponential) spectral diffusion processes. The decay times span a range from 100 ms in crystals containing 50% $^{29}$Si to 3 s in crystals containing 1% $^{29}$Si. These nuclear spin echo decay times for neutral donors are orders of magnitude longer than those reported for ionized donors in natural silicon. The electron spin of the neutral donors `protects' the donor nuclear spins by suppressing $^{29}$Si flip-flops within a `frozen core', as a result of the detuning of the $^{29}$Si spins caused by their hyperfine coupling to the electron spin. △ Less

Submitted 21 August, 2015; originally announced August 2015.

Journal ref: Phys. Rev. B 93, 161202 (2016)

Reaching the quantum limit of sensitivity in electron spin resonance

Authors: A. Bienfait, J. J. Pla, Y. Kubo, M. Stern, X. Zhou, C. C. Lo, C. D. Weis, T. Schenkel, M. L. W. Thewalt, D. Vion, D. Esteve, B. Julsgaard, K. Moelmer, J. J. L. Morton, P. Bertet

Abstract: We report pulsed electron-spin resonance (ESR) measurements on an ensemble of Bismuth donors in Silicon cooled at 10mK in a dilution refrigerator. Using a Josephson parametric microwave amplifier combined with high-quality factor superconducting micro-resonators cooled at millikelvin temperatures, we improve the state-of-the-art sensitivity of inductive ESR detection by nearly 4 orders of magnitud… ▽ More We report pulsed electron-spin resonance (ESR) measurements on an ensemble of Bismuth donors in Silicon cooled at 10mK in a dilution refrigerator. Using a Josephson parametric microwave amplifier combined with high-quality factor superconducting micro-resonators cooled at millikelvin temperatures, we improve the state-of-the-art sensitivity of inductive ESR detection by nearly 4 orders of magnitude. We demonstrate the detection of 1700 bismuth donor spins in silicon within a single Hahn echo with unit signal-to-noise (SNR) ratio, reduced to just 150 spins by averaging a single Carr-Purcell-Meiboom-Gill sequence. This unprecedented sensitivity reaches the limit set by quantum fluctuations of the electromagnetic field instead of thermal or technical noise, which constitutes a novel regime for magnetic resonance. △ Less

Submitted 24 July, 2015; originally announced July 2015.

Comments: Main text : 10 pages, 4 figures. Supplementary text : 16 pages, 8 figures

$^{29}$Si nuclear spins as a resource for donor spin qubits in silicon

Authors: Gary Wolfowicz, Pierre-Andre Mortemousque, Roland Guichard, Stephanie Simmons, Mike L. W. Thewalt, Kohei M. Itoh, John J. L. Morton

Abstract: Nuclear spin registers in the vicinity of electron spins in solid state systems offer a powerful resource to address the challenge of scalability in quantum architectures. We investigate here the properties of $^{29}$Si nuclear spins surrounding donor atoms in silicon, and consider the use of such spins, combined with the donor nuclear spin, as a quantum register coupled to the donor electron spin… ▽ More Nuclear spin registers in the vicinity of electron spins in solid state systems offer a powerful resource to address the challenge of scalability in quantum architectures. We investigate here the properties of $^{29}$Si nuclear spins surrounding donor atoms in silicon, and consider the use of such spins, combined with the donor nuclear spin, as a quantum register coupled to the donor electron spin. We find the coherence of the nearby $^{29}$Si nuclear spins is effectively protected by the presence of the donor electron spin, leading to coherence times in the second timescale - over two orders of magnitude greater than the coherence times in bulk silicon. We theoretically investigate the use of such a register for quantum error correction, including methods to protect nuclear spins from the ionisation/neutralisation of the donor, which is necessary for the re-initialisation of the ancillae qubits. This provides a route for multi-round quantum error correction using donors in silicon. △ Less

Submitted 8 May, 2015; originally announced May 2015.

Comments: 6 pages, 4 figures

The classical nature of nuclear spin noise near clock transitions of Bi donors in silicon

Authors: Wen-Long Ma, Gary Wolfowicz, Shu-Shen Li, John J. L. Morton, Ren-Bao Liu

Abstract: Whether a quantum bath can be approximated as classical noise is a fundamental issue in central spin decoherence and also of practical importance in designing noise-resilient quantum control. Spin qubits based on bismuth donors in silicon have tunable interactions with nuclear spin baths and are first-order insensitive to magnetic noise at so-called clock-transitions (CTs). This system is therefor… ▽ More Whether a quantum bath can be approximated as classical noise is a fundamental issue in central spin decoherence and also of practical importance in designing noise-resilient quantum control. Spin qubits based on bismuth donors in silicon have tunable interactions with nuclear spin baths and are first-order insensitive to magnetic noise at so-called clock-transitions (CTs). This system is therefore ideal for studying the quantum/classical nature of nuclear spin baths since the qubit-bath interaction strength determines the back-action on the baths and hence the adequacy of a classical noise model. We develop a Gaussian noise model with noise correlations determined by quantum calculations and compare the classical noise approximation to the full quantum bath theory. We experimentally test our model through dynamical decoupling sequence of up to 128 pulses, finding good agreement with simulations and measuring electron spin coherence times approaching one second - notably using natural silicon. Our theoretical and experimental study demonstrates that the noise from a nuclear spin bath is analogous to classical Gaussian noise if the back-action of the qubit on the bath is small compared to the internal bath dynamics, as is the case close to CTs. However, far from the CTs, the back-action of the central spin on the bath is such that the quantum model is required to accurately model spin decoherence. △ Less

Submitted 7 May, 2015; originally announced May 2015.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 92, 161403 (2015)

Spin relaxation and donor-acceptor recombination of Se$^+$ in 28-silicon

Authors: Roberto Lo Nardo, Gary Wolfowicz, Stephanie Simmons, Alexei M. Tyryshkin, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Michael Steger, Stephen A. Lyon, Mike L. W. Thewalt, John J. L. Morton

Abstract: Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studie… ▽ More Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studied group V donors. Here we study the electron spin relaxation ($T_1$) and coherence ($T_2$) times of Se$^{+}$ in isotopically purified 28-silicon, and find them to be up to two orders of magnitude longer than shallow group V donors at temperatures above $\sim 15$ K. We further study the dynamics of donor-acceptor recombination between selenium and boron, demonstrating that it is possible to control the donor charge state through optical excitation of neutral Se$^0$. △ Less

Submitted 1 May, 2015; v1 submitted 19 March, 2015; originally announced March 2015.

Charge dynamics and spin blockade in a hybrid double quantum dot in silicon

Authors: M. Urdampilleta, A. Chatterjee, C. C. Lo, T. Kobayashi, J. Mansir, S. Barraud, A. C. Betz, S. Rogge, M. F. Gonzalez-Zalba, J. J. L. Morton

Abstract: Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfin… ▽ More Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability and scalability. Here we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterise the charge dynamics, which reveals a charge T2* of 200 ps and a relaxation time T1 of 100 ns. Additionally, we demonstrate spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus. △ Less

Submitted 19 March, 2015; v1 submitted 3 March, 2015; originally announced March 2015.

Comments: 6 pages, 4 figures, supplementary information (3 pages, 4 figures)

Journal ref: Phys. Rev. X 5, 031024 (2015)

Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon

Authors: C. C. Lo, M. Urdampilleta, P. Ross, M. F. Gonzalez-Zalba, J. Mansir, S. A. Lyon, M. L. W. Thewalt, J. J. L. Morton

Abstract: Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing. For electron spins bound to shallow donors in silicon, bulk electrically-detected magnetic resonance has relied on coupling to spin readout partners such as pa… ▽ More Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing. For electron spins bound to shallow donors in silicon, bulk electrically-detected magnetic resonance has relied on coupling to spin readout partners such as paramagnetic defects or conduction electrons which fundamentally limits spin coherence times. Here we demonstrate electrical detection of phosphorus donor electron spin resonance by transport through a silicon device, using optically-driven donor-bound exciton transitions. We use this method to measure electron spin Rabi oscillations, and, by avoiding use of an ancillary spin for readout, we are able to obtain long intrinsic electron spin coherence times, limited only by the donor concentration. We go on to experimentally address critical issues for adopting this scheme for single spin measurement in silicon nanodevices, including the effects of strain, electric fields, and non-resonant excitation. This lays the foundations for realising a versatile readout method for single spin readout with relaxed magnetic field and temperature requirements compared with spin-dependent tunneling. △ Less

Submitted 5 November, 2014; originally announced November 2014.

Comments: 13 pages, 4 figures

Hyperfine Stark effect of shallow donors in silicon

Authors: G. Pica, G. Wolfowicz, M. Urdampilleta, M. L. W. Thewalt, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, J. J. L. Morton, R. N. Bhatt, S. A. Lyon, B. W. Lovett

Abstract: We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions induced by a donor-dependent central cell potential, allows us to obtain a very reliable picture of the donor wave function within a relatively simple framework. V… ▽ More We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions induced by a donor-dependent central cell potential, allows us to obtain a very reliable picture of the donor wave function within a relatively simple framework. Variational optimization of the 1s donor binding energies calculated with a new trial wave function, in a pseudopotential with two fitting parameters, allows an accurate match of the experimentally determined donor energy levels, while the correct limiting behavior for the electronic density, both close to and far from each impurity nucleus, is captured by fitting the measured contact hyperfine coupling between the donor nuclear and electron spin. We go on to include an external uniform electric field in order to model Stark physics: With no extra ad hoc parameters, variational minimization of the complete donor ground energy allows a quantitative description of the field-induced reduction of electronic density at each impurity nucleus. Detailed comparisons with experimental values for the shifts of the contact hyperfine coupling reveal very close agreement for all the donors measured (P, As, Sb and Bi). Finally, we estimate field ionization thresholds for the donor ground states, thus setting upper limits to the gate manipulation times for single qubit operations in Kane-like architectures: the Si:Bi system is shown to allow for A gates as fast as around 10 MHz. △ Less

Submitted 19 August, 2014; originally announced August 2014.

Comments: 11 pages, 6 figures

Journal ref: Phys. Rev. B 90 195204 (2014)

Host isotope mass effects on the hyperfine interaction of group-V donors in silicon

Authors: T. Sekiguchi, A. M. Tyryshkin, S. Tojo, E. Abe, R. Mori, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, J. W. Ager, E. E. Haller, M. L. W. Thewalt, J. J. L. Morton, S. A. Lyon, K. M. Itoh

Abstract: The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the hyperfine-split P-31, As-75, Sb-121, Sb-123, and Bi-209 ENDOR lines splits further into multiple components, whose relative intensities accurately match the statistical lik… ▽ More The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the hyperfine-split P-31, As-75, Sb-121, Sb-123, and Bi-209 ENDOR lines splits further into multiple components, whose relative intensities accurately match the statistical likelihood of the nine possible average Si masses in the four nearest-neighbor sites due to random occupation by the three stable isotopes Si-28, Si-29, and Si-30. Further investigation with P-31 donors shows that the resolved ENDOR components shift linearly with the bulk-averaged Si mass. △ Less

Submitted 25 July, 2014; originally announced July 2014.

Comments: 5 pages, 4 figures, 1 table

Journal ref: Phys. Rev. B 90, 121203 (2014)

Conditional control of donor nuclear spins in silicon using Stark shifts

Authors: Gary Wolfowicz, Matias Urdampilleta, Mike L. W. Thewalt, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, John J. L. Morton

Abstract: Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear spin. We present a technique based on dynamic decoupling of the electron spin to accurately determine the Stark shift, and illustrate this using antimony donors… ▽ More Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear spin. We present a technique based on dynamic decoupling of the electron spin to accurately determine the Stark shift, and illustrate this using antimony donors in isotopically purified silicon-28. We then demonstrate two different methods to use a DC electric field combined with an applied resonant radio-frequency (RF) field to conditionally control donor nuclear spins. The first method combines an electric-field induced conditional phase gate with standard RF pulses, and the second one simply detunes the spins off-resonance. Finally, we consider different strategies to reduce the effect of electric field inhomogeneities and obtain above 90% process fidelities. △ Less

Submitted 28 May, 2014; originally announced May 2014.

Comments: 5 pages, 4 figures, 1 supplementary information

Uncovering many-body correlations in nanoscale nuclear spin baths by central spin decoherence

Authors: Wen-Long Ma, Gary Wolfowicz, Nan Zhao, Shu-Shen Li, John J. L. Morton, Ren-Bao Liu

Abstract: Many-body correlations can yield key insights into the nature of interacting systems; however, detecting them is often very challenging in many-particle physics, especially in nanoscale systems. Here, taking a phosphorus donor electron spin in a natural-abundance 29Si nuclear spin bath as our model system, we discover both theoretically and experimentally that many-body correlations in nanoscale n… ▽ More Many-body correlations can yield key insights into the nature of interacting systems; however, detecting them is often very challenging in many-particle physics, especially in nanoscale systems. Here, taking a phosphorus donor electron spin in a natural-abundance 29Si nuclear spin bath as our model system, we discover both theoretically and experimentally that many-body correlations in nanoscale nuclear spin baths produce identifiable signatures in the decoherence of the central spin under multiple-pulse dynamical decoupling control. We find that when the number of decoupling -pulses is odd, central spin decoherence is primarily driven by second-order nuclear spin correlations (pairwise flip-flop processes). In contrast, when the number of -pulses is even, fourth-order nuclear spin correlations (diagonal interaction renormalized pairwise flip-flop processes) are principally responsible for the central spin decoherence. Many-body correlations of different orders can thus be selectively detected by central spin decoherence under different dynamical decoupling controls, providing a useful approach to probing many-body processes in nanoscale nuclear spin baths. △ Less

Submitted 10 April, 2014; originally announced April 2014.

Journal ref: Nature Communications 5, Article number: 4822 (2014)

Fast, low-power manipulation of spin ensembles in superconducting microresonators

Authors: Anthony J. Sigillito, Hans Malissa, Alexei M. Tyryshkin, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Mike L. W. Thewalt, Kohei M. Itoh, John J. L. Morton, Andrew A. Houck, David I. Schuster, S. A. Lyon

Abstract: We demonstrate the use of high-Q superconducting coplanar waveguide (CPW) microresonators to perform rapid manipulations on a randomly distributed spin ensemble using very low microwave power (400 nW). This power is compatible with dilution refrigerators, making microwave manipulation of spin ensembles feasible for quantum computing applications. We also describe the use of adiabatic microwave pul… ▽ More We demonstrate the use of high-Q superconducting coplanar waveguide (CPW) microresonators to perform rapid manipulations on a randomly distributed spin ensemble using very low microwave power (400 nW). This power is compatible with dilution refrigerators, making microwave manipulation of spin ensembles feasible for quantum computing applications. We also describe the use of adiabatic microwave pulses to overcome microwave magnetic field ($B_{1}$) inhomogeneities inherent to CPW resonators. This allows for uniform control over a randomly distributed spin ensemble. Sensitivity data are reported showing a single shot (no signal averaging) sensitivity to $10^{7}$ spins or $3 \times 10^{4}$ spins/$\sqrt{Hz}$ with averaging. △ Less

Submitted 1 May, 2014; v1 submitted 28 February, 2014; originally announced March 2014.

Comments: 5 pages, 4 figures

Stark shift and field ionization of arsenic donors in $^{28}$Si-SOI structures

Authors: C. C. Lo, S. Simmons, R. Lo Nardo, C. D. Weis, A. M. Tyryshkin, J. Meijer, D. Rogalla, S. A. Lyon, J. Bokor, T. Schenkel, J. J. L. Morton

Abstract: We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large an… ▽ More We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to $\sim$ 2 V/$μ$m to be applied across the SOI layer. Utilizing this structure we measure the Stark shift parameters of arsenic donors embedded in the $^{28}$Si SOI layer and find a contact hyperfine Stark parameter of $η_a=-1.9\pm0.2\times10^{-3} μ$m$^2$/V$^2$. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance. △ Less

Submitted 27 January, 2014; originally announced January 2014.

Comments: 5 pages, 3 figures

Microwave manipulation of electrically injected spin polarized electrons in silicon

Authors: C. C. Lo, J. Li, I. Appelbaum, J. J. L. Morton

Abstract: We demonstrate microwave manipulation of the spin states of electrically injected spin-polarized electrons in silicon. Although the silicon channel is bounded by ferromagnetic metal films, we show that moderate microwave power can be applied to the devices without altering the device operation significantly. Resonant microwave irradiation is used to induce spin rotation of spin-polarized electrons… ▽ More We demonstrate microwave manipulation of the spin states of electrically injected spin-polarized electrons in silicon. Although the silicon channel is bounded by ferromagnetic metal films, we show that moderate microwave power can be applied to the devices without altering the device operation significantly. Resonant microwave irradiation is used to induce spin rotation of spin-polarized electrons as they travel across a silicon channel, and the resultant spin polarization is subsequently detected by a ferromagnetic Schottky barrier spin detector. These results demonstrate the potential for combining advanced electron spin resonance techniques to complement the study of semiconductor spintronic devices beyond standard magnetotransport measurements. △ Less

Submitted 12 December, 2013; originally announced December 2013.

Comments: 5 pages, 4 figures

A single-atom electron spin qubit in silicon

Authors: Jarryd J. Pla, Kuan Y. Tan, Juan P. Dehollain, Wee H. Lim, John J. L. Morton, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: A single atom is the prototypical quantum system, and a natural candidate for a quantum bit - the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the NV-center point defect. Solid state electrical devices possess great potential to scale up such demonstrations from f… ▽ More A single atom is the prototypical quantum system, and a natural candidate for a quantum bit - the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the NV-center point defect. Solid state electrical devices possess great potential to scale up such demonstrations from few-qubit control to larger scale quantum processors. In this direction, coherent control of spin qubits has been achieved in lithographically-defined double quantum dots in both GaAs and Si. However, it is a formidable challenge to combine the electrical measurement capabilities of engineered nanostructures with the benefits inherent to atomic spin qubits. Here we demonstrate the coherent manipulation of an individual electron spin qubit bound to a phosphorus donor atom in natural silicon, measured electrically via single-shot readout. We use electron spin resonance to drive Rabi oscillations, while a Hahn echo pulse sequence reveals a spin coherence time (T2) exceeding 200 μs. This figure is expected to become even longer in isotopically enriched 28Si samples. Together with the use of a device architecture that is compatible with modern integrated circuit technology, these results indicate that the electron spin of a single phosphorus atom in silicon is an excellent platform on which to build a scalable quantum computer. △ Less

Submitted 20 May, 2013; originally announced May 2013.

Comments: 13 pages, 4 figures

Journal ref: Nature 489, 541 (2012)

Quantum bath-driven decoherence of mixed spin systems

Authors: S. J. Balian, Gary Wolfowicz, John J. L. Morton, T. S. Monteiro

Abstract: The decoherence of mixed electron-nuclear spin qubits is a topic of great current importance, but understanding is still lacking: while important decoherence mechanisms for spin qubits arise from quantum spin bath environments with slow decay of correlations, the only analytical framework for explaining observed sharp variations of decoherence times with magnetic field is based on the suppression… ▽ More The decoherence of mixed electron-nuclear spin qubits is a topic of great current importance, but understanding is still lacking: while important decoherence mechanisms for spin qubits arise from quantum spin bath environments with slow decay of correlations, the only analytical framework for explaining observed sharp variations of decoherence times with magnetic field is based on the suppression of classical noise. Here we obtain a general expression for decoherence times of the central spin system which exposes significant differences between quantum-bath decoherence and decoherence by classical field noise. We perform measurements of decoherence times of bismuth donors in natural silicon using both electron spin resonance (ESR) and nuclear magnetic resonance (NMR) transitions, and in both cases find excellent agreement with our theory across a wide parameter range. The universality of our expression is also tested by quantitative comparisons with previous measurements of decoherence around `optimal working points' or `clock transitions' where decoherence is strongly suppressed. We further validate our results by comparison to cluster expansion simulations. △ Less

Submitted 22 November, 2013; v1 submitted 7 February, 2013; originally announced February 2013.

Journal ref: Phys. Rev. B 89, 045403 (2014)