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Anomalous Behavior of the Dielectric and Pyroelectric Responses of Ferroelectric Fine-Grained Ceramics
Authors:
Oleksandr S. Pylypchuk,
Serhii E. Ivanchenko,
Mykola Y. Yelisieiev,
Andrii S. Nikolenko,
Victor I. Styopkin,
Bohdan Pokhylko,
Vladyslav Kushnir,
Denis O. Stetsenko,
Oleksii Bereznykov,
Oksana V. Leschenko,
Eugene A. Eliseev,
Vladimir N. Poroshin,
Nicholas V. Morozovsky,
Victor V. Vainberg,
Anna N. Morozovska
Abstract:
We revealed the anomalous temperature behavior of the giant dielectric permittivity and unusual frequency dependences of the pyroelectric response of the fine-grained ceramics prepared by the spark plasma sintering of the ferroelectric BaTiO3 nanoparticles. The temperature dependences of the electro-resistivity indicate the frequency-dependent transition in the electro-transport mechanisms between…
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We revealed the anomalous temperature behavior of the giant dielectric permittivity and unusual frequency dependences of the pyroelectric response of the fine-grained ceramics prepared by the spark plasma sintering of the ferroelectric BaTiO3 nanoparticles. The temperature dependences of the electro-resistivity indicate the frequency-dependent transition in the electro-transport mechanisms between the lower and higher conductivity states accompanied by the maximum in the temperature dependence of the loss angle tangent. The pyroelectric thermal-wave probing revealed the existence of the spatially inhomogeneous counter-polarized ferroelectric state at the opposite surfaces of the ceramic sample. We described the anomalous temperature behavior of the giant dielectric response and losses using the core-shell model for ceramic grains and modified Maxwell-Wagner approach. We assume that core shells and grain boundaries, which contain high concentration of space charge carriers due to the presence of graphite inclusions in the inter-grain space, can effectively screen weakly conductive ferroelectric grain cores. The superparaelectric-like state with a giant dielectric response can appear in the paraelectric shells and inter-grain space due to the step-like thermal activation of localized polarons in the spatial regions, agreeing with experimentally observed frequency-dependent transition of the electro-transport mechanism. The obtained results can be the key for the description of complex electrophysical properties inherent to the strongly inhomogeneous media with electrically coupled insulating ferroelectric nanoregions and semiconducting superparaelectric-like regions.
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Submitted 1 July, 2024;
originally announced July 2024.
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Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field-Effect Transistors
Authors:
Anna N. Morozovska,
Eugene A. Eliseev,
Yulian M. Vysochanskii,
Sergei V. Kalinin,
Maksym V. Strikha
Abstract:
Analytical calculations corroborated by the finite element modelling show that thin films of Van der Waals ferrielectrics covered by a 2D-semiconductor are promising candidates for the controllable reduction of the dielectric layer capacitance due to the negative capacitance (NC) effect emerging in the ferrielectric film. The NC state is conditioned by energy-degenerated poly-domain states of the…
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Analytical calculations corroborated by the finite element modelling show that thin films of Van der Waals ferrielectrics covered by a 2D-semiconductor are promising candidates for the controllable reduction of the dielectric layer capacitance due to the negative capacitance (NC) effect emerging in the ferrielectric film. The NC state is conditioned by energy-degenerated poly-domain states of the ferrielectric polarization induced in the films under incomplete screening conditions in the presence of a dielectric layer. Calculations performed for the FET-type heterostructure "ferrielectric CuInP2S6 film - 2D-MoS2 single-layer - SiO2 dielectric layer" reveal the pronounced size effect of the multilayer capacitance. Derived analytical expressions for the electric polarization and multilayer capacitance allow to predict the thickness range of the dielectric layer and ferrielectric film for which the NC effect is the most pronounced in various Van der Waals ferrielectrics, and the corresponding subthreshold swing becomes much less than the Boltzmann's limit. Obtained results can be useful for the size and temperature control of the NC effect in the steep-slope ferrielectric FETs.
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Submitted 18 June, 2024;
originally announced June 2024.
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Ferri-ionic Coupling in CuInP$_2$S$_6$ Nanoflakes: Polarization States and Controllable Negative Capacitance
Authors:
Anna N. Morozovska,
Sergei V. Kalinin,
Eugene. A. Eliseev,
Svitlana Kopyl,
Yulian M. Vysochanskii,
Dean R. Evans
Abstract:
We consider nanoflakes of van der Waals ferrielectric CuInP$_2$S$_6$ covered by an ionic surface charge and reveal the appearance of polar states with relatively high polarization ~5 microC/cm$^2$ and stored free charge ~10 microC/cm$%2$, which can mimic "mid-gap" states associated with a surface field-induced transfer of Cu and/or In ions in the van der Waals gap. The change in the ionic screenin…
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We consider nanoflakes of van der Waals ferrielectric CuInP$_2$S$_6$ covered by an ionic surface charge and reveal the appearance of polar states with relatively high polarization ~5 microC/cm$^2$ and stored free charge ~10 microC/cm$%2$, which can mimic "mid-gap" states associated with a surface field-induced transfer of Cu and/or In ions in the van der Waals gap. The change in the ionic screening degree and mismatch strains induce a broad range of the transitions between paraelectric phase, antiferroelectric, ferrielectric, and ferri-ionic states in CuInP$_2$S$_6$ nanoflakes. The states' stability and/or metastability is determined by the minimum of the system free energy consisting of electrostatic energy, elastic energy, and a Landau-type four-well potential of the ferrielectric dipole polarization. The possibility to govern the transitions by strain and ionic screening can be useful for controlling the tunneling barrier in thin film devices based on CuInP$_2$S$_6$ nanoflakes. Also, we predict that the CuInP$_2$S$_6$ nanoflakes reveal features of the controllable negative capacitance effect, which make them attractive for advanced electronic devices, such as nano-capacitors and gate oxide nanomaterials with reduced heat dissipation.
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Submitted 5 June, 2024; v1 submitted 23 May, 2024;
originally announced May 2024.
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Evolution of ferroelectric properties in SmxBi1-xFeO3 via automated Piezoresponse Force Microscopy across combinatorial spread libraries
Authors:
Aditya Raghavan,
Rohit Pant,
Ichiro Takeuchi,
Eugene A. Eliseev,
Marti Checa,
Anna N. Morozovska,
Maxim Ziatdinov,
Sergei V. Kalinin,
Yongtao Liu
Abstract:
Combinatorial spread libraries offer a unique approach to explore evolution of materials properties over the broad concentration, temperature, and growth parameter spaces. However, the traditional limitation of this approach is the requirement for the read-out of functional properties across the library. Here we demonstrate the application of automated Piezoresponse Force Microscopy (PFM) for the…
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Combinatorial spread libraries offer a unique approach to explore evolution of materials properties over the broad concentration, temperature, and growth parameter spaces. However, the traditional limitation of this approach is the requirement for the read-out of functional properties across the library. Here we demonstrate the application of automated Piezoresponse Force Microscopy (PFM) for the exploration of the physics in the SmxBi1-xFeO3 system with the ferroelectric-antiferroelectric morphotropic phase boundary. This approach relies on the synergy of the quantitative nature of PFM and the implementation of automated experiments that allows PFM-based gird sampling over macroscopic samples. The concentration dependence of pertinent ferroelectric parameters has been determined and used to develop the mathematical framework based on Ginzburg-Landau theory describing the evolution of these properties across the concentration space. We pose that combination of automated scanning probe microscope and combinatorial spread library approach will emerge as an efficient research paradigm to close the characterization gap in the high-throughput materials discovery. We make the data sets open to the community and hope that will stimulate other efforts to interpret and understand the physics of these systems.
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Submitted 14 May, 2024;
originally announced May 2024.
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Strain-polarization coupling in the low-dimensional Van der Waals Ferrielectrics
Authors:
Anna N. Morozovska,
Hanna V. Shevliakova,
Liubomyr M. Korolevych,
Victoria Khist,
Yulian M. Vysochanskii,
Eugene A. Eliseev
Abstract:
Using the Landau-Ginzburg-Devonshire phenomenological approach we explore the strain-polarization coupling in the low-dimensional van der Waals ferrielectrics. We evolve the analytical model of the piezoelectric susceptibility of the material in response to the periodic strain modulation, such as caused by a surface acoustic wave. Numerical calculations are performed for recently discovered and po…
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Using the Landau-Ginzburg-Devonshire phenomenological approach we explore the strain-polarization coupling in the low-dimensional van der Waals ferrielectrics. We evolve the analytical model of the piezoelectric susceptibility of the material in response to the periodic strain modulation, such as caused by a surface acoustic wave. Numerical calculations are performed for recently discovered and poorly studied ultrathin layers of the van der Waals ferrielectric CuInP2S6, which are very promising candidates for advanced nanoelectronics. We obtained that the temperature dependences of the dielectric and piezoelectric susceptibilities, and elastic compliance of the ultrathin CuInP2S6 layer have a sharp maximum at the temperature of CuInP2S6 paraelectric-ferrielectric phase transition near 320 K. The magnitudes of the dielectric and piezoelectric susceptibilities, and elastic compliance depend significantly on the modulation period of the surface acoustic wave. Obtained results explore the potential of ultrathin CuInP2S6 layers for application in piezoelectric and straintronic devices.
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Submitted 15 April, 2024;
originally announced April 2024.
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Phase diagrams and polarization reversal in nanosized Hf$_x$Zr$_{1-x}$O$_{2-y}$
Authors:
Eugene A. Eliseev,
Yuri O. Zagorodniy,
Victor N. Pavlikov,
Oksana V. Leshchenko,
Hanna V. Shevliakova,
Miroslav V. Karpec,
Andrei D. Yaremkevych,
Olena M. Fesenko,
Sergei V. Kalinin,
Anna N. Morozovska
Abstract:
To describe the polar properties of the nanosized HfxZr1-xO2-y, we evolve the "effective" Landau-Ginzburg-Devonshire (LGD) model based on the parametrization of the Landau expansion coefficients for the polar and antipolar orderings. We have shown that the effective LGD model can predict the influence of screening conditions and size effects on phase diagrams, polarization reversal and structural…
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To describe the polar properties of the nanosized HfxZr1-xO2-y, we evolve the "effective" Landau-Ginzburg-Devonshire (LGD) model based on the parametrization of the Landau expansion coefficients for the polar and antipolar orderings. We have shown that the effective LGD model can predict the influence of screening conditions and size effects on phase diagrams, polarization reversal and structural properties of the nanosized HfxZr1-xO2-y of various shape and sizes. To verify the model, we use available experimental results for HfxZr1-xO2 thin films and oxygen-deficient HfO2-y nanoparticles prepared at different annealing conditions. X-ray diffraction, which was used to determine the phase composition of the HfO2-y nanoparticles, revealed the formation of the ferroelectric orthorhombic phase in them. Micro-Raman spectroscopy was used to explore the correlation of lattice dynamics and structural changes appearing in dependence on the oxygen vacancies concentration in the HfO2-y nanoparticles. Since our approach allows to determine the conditions (shape, sizes, Zr content and/or oxygen vacancies amount) for which the nanosized HfxZr1-xO2-y are ferroelectrics or antiferroelectrics, we hope that obtained results are useful for creation of next generation of Si-compatible ferroelectric gate oxide nanomaterials.
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Submitted 19 March, 2024; v1 submitted 28 February, 2024;
originally announced February 2024.
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Coexistence and interplay of two ferroelectric mechanisms in Zn1-xMgxO
Authors:
Jonghee Yang,
Anton V. Ievlev,
Anna N. Morozovska,
Eugene Eliseev,
Jonathan D Poplawsky,
Devin Goodling,
Robert Jackson Spurling,
Jon-Paul Maria,
Sergei V. Kalinin,
Yongtao Liu
Abstract:
Ferroelectric materials promise exceptional attributes including low power dissipation, fast operational speeds, enhanced endurance, and superior retention to revolutionize information technology. However, the practical application of ferroelectric-semiconductor memory devices has been significantly challenged by the incompatibility of traditional perovskite oxide ferroelectrics with metal-oxide-s…
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Ferroelectric materials promise exceptional attributes including low power dissipation, fast operational speeds, enhanced endurance, and superior retention to revolutionize information technology. However, the practical application of ferroelectric-semiconductor memory devices has been significantly challenged by the incompatibility of traditional perovskite oxide ferroelectrics with metal-oxide-semiconductor technology. Recent discoveries of ferroelectricity in binary oxides such as Zn1-xMgxO and Hf1-xZrxO have been a focal point of research in ferroelectric information technology. This work investigates the ferroelectric properties of Zn1-xMgxO utilizing automated band excitation piezoresponse force microscopy. Our findings reveal the coexistence of two ferroelectric subsystems within Zn1-xMgxO. We propose a "fringing-ridge mechanism" of polarization switching that is characterized by initial lateral expansion of nucleation without significant propagation in depth, contradicting the conventional domain growth process observed in ferroelectrics. This unique polarization dynamics in Zn1-xMgxO suggests a new understanding of ferroelectric behavior, contributing to both the fundamental science of ferroelectrics and their application in information technology.
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Submitted 13 February, 2024;
originally announced February 2024.
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The Influence of Chemical Strains on the Electrocaloric Response, Polarization Morphology, Tetragonality and Negative Capacitance Effect of Ferroelectric Core-Shell Nanorods and Nanowires
Authors:
Anna N. Morozovska,
Eugene A. Eliseev,
Olha A. Kovalenko,
Dean R. Evans
Abstract:
Using Landau-Ginzburg-Devonshire (LGD) approach we proposed the analytical description of the chemical strains influence on the spontaneous polarization and electrocaloric response in ferroelectric core-shell nanorods. We postulate that the nanorod core presents a defect-free single-crystalline ferroelectric material, and the elastic defects are accumulated in the ultra-thin shell, where they can…
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Using Landau-Ginzburg-Devonshire (LGD) approach we proposed the analytical description of the chemical strains influence on the spontaneous polarization and electrocaloric response in ferroelectric core-shell nanorods. We postulate that the nanorod core presents a defect-free single-crystalline ferroelectric material, and the elastic defects are accumulated in the ultra-thin shell, where they can induce tensile or compressive chemical strains. The finite element modeling (FEM) based on the LGD approach reveals transitions of domain structure morphology induced by the chemical strains in the BaTiO3 nanorods. Namely, tensile chemical strains induce and support the single-domain state in the central part of the nanorod, while the curled domain structures appear near the unscreened or partially screened ends of the rod. The vortex-like domains propagate toward the central part of the rod and fill it entirely, when the rod is covered by a shell with compressive chemical strains above some critical value. The critical value depends on the nanorod sizes, aspect ratio, and screening conditions at its ends. Both analytical theory and FEM predict that the tensile chemical strains in the shell increase the nanorod polarization, lattice tetragonality, and electrocaloric response well-above the values corresponding to the bulk material. The physical reason of the increase is the strong electrostriction coupling between the mismatch-type elastic strains induced in the core by the chemical strains in the shell. Comparison with the earlier XRD data confirmed an increase of tetragonality ratio in tensiled BaTiO3 nanorods compared to the bulk material.
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Submitted 8 April, 2024; v1 submitted 9 February, 2024;
originally announced February 2024.
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Temperature-Induced Hexagonal-Orthorhombic Phase Transition in Lutetium Ferrite Nanoparticles
Authors:
Olena M. Fesenko,
Igor V. Fesych,
Igor V. Zatovsky,
Andrii D. Yaremkevych,
Maxim Rallev,
Andrii V. Bodnaruk,
Eugene A. Eliseev,
Anna N. Morozovska
Abstract:
The X-ray diffraction, Raman and infrared spectroscopies and magnetic measurements were used to explore the correlated changes of the structure, lattice dynamics and magnetic properties of the LuFeO3 nanoparticles, which appear in dependence on their sintering temperature. We revealed a gradual substitution of the hexagonal phase by the orthorhombic phase in the nanoparticles, which sintering temp…
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The X-ray diffraction, Raman and infrared spectroscopies and magnetic measurements were used to explore the correlated changes of the structure, lattice dynamics and magnetic properties of the LuFeO3 nanoparticles, which appear in dependence on their sintering temperature. We revealed a gradual substitution of the hexagonal phase by the orthorhombic phase in the nanoparticles, which sintering temperature increases from 700 C to 1100 C. The origin and stability of the hexagonal phase in the LuFeO3 nanoparticles is of the special interest, because the nanoparticle in the phase can be a room-temperature multiferroic with a weak ferromagnetic and pronounced structural and ferroelectric long-range ordering, while the antiferromagnetic and nonpolar orthorhombic phase is more stable in the bulk LuFeO3. To define the ranges of the hexagonal phase stability, we determine the bulk and interface energy densities of different phases from the comparison of the Gibbs model with experimental results. Using the Gibbs model parameters, we predict the influence of size effects and temperature on the structural and polar properties of the LuFeO3 nanoparticles. Analysis of the obtained results shows that the combination of the X-ray diffraction, Raman and infrared spectroscopy, magnetic measurements and theoretical modelling of structural and polar properties allows to establish the interplay between the phase composition, lattice dynamics and multiferroic properties of the LuFeO3 nanoparticles prepared in different conditions.
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Submitted 16 June, 2024; v1 submitted 16 September, 2023;
originally announced September 2023.
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The strain-induced transitions of the piezoelectric, pyroelectric and electrocaloric properties of the CuInP$_2$S$_6$ films
Authors:
Anna N. Morozovska,
Eugene A. Eliseev,
Lesya P. Yurchenko,
Valentin V. Laguta,
Yongtao Liu,
Sergei V. Kalinin,
Andrei L Kholkin,
Yulian M. Vysochanskii
Abstract:
The low-dimensional ferroelectrics, ferrielectrics and antiferroelectrics are of urgent scientific interest due to their unusual polar, piezoelectric, electrocaloric and pyroelectric properties. The strain engineering and strain control of the ferroelectric properties of layered 2D Van der Waals materials, such as CuInP$_2$(S,Se)$_6$ monolayers, thin films and nanoflakes, are of fundamental intere…
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The low-dimensional ferroelectrics, ferrielectrics and antiferroelectrics are of urgent scientific interest due to their unusual polar, piezoelectric, electrocaloric and pyroelectric properties. The strain engineering and strain control of the ferroelectric properties of layered 2D Van der Waals materials, such as CuInP$_2$(S,Se)$_6$ monolayers, thin films and nanoflakes, are of fundamental interest and especially promising for their advanced applications in nanoscale nonvolatile memories, energy conversion and storage, nano-coolers and sensors. Here, we study the polar, piezoelectric, electrocaloric and pyroelectric properties of thin strained films of a ferrielectric CuInP$_2$S$_6$ covered by semiconducting electrodes and reveal an unusually strong effect of a mismatch strain on these properties. In particular, the sign of the mismatch strain and its magnitude determine the complicated behavior of piezoelectric, electrocaloric and pyroelectric responses. The strain effect on these properties is opposite, i.e., "anomalous", in comparison with many other ferroelectric films, for which the out-of-plane remanent polarization, piezoelectric, electrocaloric and pyroelectric responses increase strongly for tensile strains and decrease or vanish for compressive strains.
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Submitted 17 November, 2023; v1 submitted 10 September, 2023;
originally announced September 2023.
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Size-Induced High Electrocaloric Response of Dense Ferroelectric Nanocomposites
Authors:
Anna N. Morozovska,
Oleksandr S. Pylypchuk,
Serhii Ivanchenko,
Eugene A. Eliseev,
Hanna V. Shevliakova,
Lubomir Korolevich,
Lesya P. Yurchenko,
Oleksandr V. Shyrokov,
Nicholas V. Morozovsky,
Vladimir N. Poroshin,
Zdravko Kutnjak,
Victor V. Vainberg
Abstract:
Analytical results obtained within Landau-Ginzburg-Devonshire approach and effective media models, predict that the synergy of size effects and Vegard stresses can significantly enhance the electrocaloric cooling (up to 7 times) of the BaTiO3 nanoparticles in comparison with a bulk BaTiO3. To compare with the considered effective media models, we measured the capacitance-voltage and current-voltag…
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Analytical results obtained within Landau-Ginzburg-Devonshire approach and effective media models, predict that the synergy of size effects and Vegard stresses can significantly enhance the electrocaloric cooling (up to 7 times) of the BaTiO3 nanoparticles in comparison with a bulk BaTiO3. To compare with the considered effective media models, we measured the capacitance-voltage and current-voltage characteristics of the dense nanocomposites consisting of (28-35) vol.% BaTiO3 nanoparticles incorporated in organic polymers and determined experimentally the effective dielectric permittivity and losses of the composites. Generalizing obtained analytical results, various ferroelectric nanoparticles spontaneously stressed by elastic defects, such as oxygen vacancies or any other elastic dipoles, which create a strong chemical pressure, can cause the giant electrocaloric response of dense ferroelectric nanocomposites. We have shown that the advantages of the studied lead-free dense nanocomposites are the good tunability of electrocaloric cooling temperature due to the size effects in ferroelectric nanoparticles and the easy control of the high electrocaloric cooling by electric fields. This makes the dense ferroelectric nanocomposites promising for cooling of conventional and innovative electronic elements, such as FETs with high-temperature superconductor channels.
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Submitted 18 September, 2023; v1 submitted 6 September, 2023;
originally announced September 2023.
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Strain-Induced Polarization Enhancement in BaTiO$_3$ Core-Shell Nanoparticles
Authors:
Eugene A. Eliseev,
Anna N. Morozovska,
Sergei V. Kalinin,
Dean R. Evans
Abstract:
Despite fascinating experimental results, the influence of defects and elastic strains on the physical state of nanosized ferroelectrics is still poorly explored theoretically. One of unresolved theoretical problems is the analytical description of the strongly enhanced spontaneous polarization, piezoelectric response, and dielectric properties of ferroelectric oxide thin films and core-shell nano…
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Despite fascinating experimental results, the influence of defects and elastic strains on the physical state of nanosized ferroelectrics is still poorly explored theoretically. One of unresolved theoretical problems is the analytical description of the strongly enhanced spontaneous polarization, piezoelectric response, and dielectric properties of ferroelectric oxide thin films and core-shell nanoparticles induced by elastic strains and stresses. In particular, the 10-nm quasi-spherical BaTiO3 core-shell nanoparticles reveal a giant spontaneous polarization up to 130 mu_C/cm2, where the physical origin is a large Ti off-centering. The available theoretical description cannot explain the giant spontaneous polarization observed in these spherical nanoparticles. This work analyzes polar properties of BaTiO3 core-shell spherical nanoparticles using the Landau-Ginzburg-Devonshire approach, which considers the nonlinear electrostriction coupling and large Vegard strains in the shell. We reveal that a spontaneous polarization greater than 50 mu_C/cm2 can be stable in a (10-100) nm BaTiO3 core at room temperature, where a 5 nm paraelectric shell is stretched by (3-6)% due to Vegard strains, which contribute to the elastic mismatch at the core-shell interface. The polarization value 50 mu_C/cm2 corresponds to high tetragonality ratios (1.02 - 1.04), which is further increased up to 100 mu_C/cm2 by higher Vegard strains and/or intrinsic surface stresses leading to unphysically high tetragonality ratios (1.08 - 1.16). The nonlinear electrostriction coupling and the elastic mismatch at the core-shell interface are key physical factors of the spontaneous polarization enhancement in the core. Do** with the highly-polarized core-shell nanoparticles can be useful in optoelectronics and nonlinear optics, electric field enhancement, reduced switching voltages, catalysis, and electrocaloric nanocoolers.
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Submitted 27 August, 2023; v1 submitted 21 August, 2023;
originally announced August 2023.
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An effective Landau-type model of Hf$_x$Zr$_{1-x}$O$_2$ thin film - graphene nanostructure
Authors:
Anna N. Morozovska,
Maksym V. Strikha,
Kyle P. Kelley,
Sergei V. Kalinin,
Eugene A. Eliseev
Abstract:
To describe the charge-polarization coupling in the nanostructure formed by a thin Hf$_x$Zr$_{1-x}$O$_2$ film with a single-layer graphene as a top electrode, we develop the "effective" Landau-Ginzburg-Devonshire model. This approach is based on the parametrization of the Landau expansion coefficients for the polar (FE) and antipolar (AFE) orderings in thin Hf$_x$Zr$_{1-x}$O$_2$ films from a limit…
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To describe the charge-polarization coupling in the nanostructure formed by a thin Hf$_x$Zr$_{1-x}$O$_2$ film with a single-layer graphene as a top electrode, we develop the "effective" Landau-Ginzburg-Devonshire model. This approach is based on the parametrization of the Landau expansion coefficients for the polar (FE) and antipolar (AFE) orderings in thin Hf$_x$Zr$_{1-x}$O$_2$ films from a limited number of polarization-field curves and hysteresis loops. The Landau expansion coefficients are nonlinearly dependent on the film thickness h and Zr/[Hf+Zr] ratio x, in contrast to h-independent and linearly x-dependent expansion coefficients of a classical Landau energy. We explain the dependence of the Landau expansion coefficients by the strong nonmonotonic dependence of the polar properties on the Hf$_x$Zr$_{1-x}$O$_2$ film thickness, grain size and surface energy. The proposed Landau free energy with five "effective" expansion coefficients, which are interpolation functions of x and h, describes the continuous transformation of polarization dependences on applied electric field and hysteresis loop shapes induced by the changes of x and h in the range 0 < x < 1 and 5 nm < h < 35 nm. Using the effective free energy, we demonstrated that the polarization of Hf$_x$Zr$_{1-x}$O$_2$ films influences strongly on the graphene conductivity, and the full correlation between the distribution of polarization and charge carriers in graphene is revealed. In accordance with our modeling, the polarization of the (5 - 25) nm thick Hf$_x$Zr$_{1-x}$O$_2$ films, which are in the ferroelectric-like or antiferroelectric-like states for the chemical compositions 0.35 < x < 0.95, determine the concentration of carriers in graphene and can control its field dependence. The result can be promising for creation of next generation Si-compatible nonvolatile memories and graphene-ferroelectric FETs.
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Submitted 19 October, 2023; v1 submitted 3 July, 2023;
originally announced July 2023.
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Bending-induced isostructural transitions in ultrathin layers of van der Waals ferrielectrics
Authors:
Anna N. Morozovska,
Eugene A. Eliseev,
Yongtao Liu,
Kyle P. Kelley,
Ayana Ghosh,
Ying Liu,
**yuan Yao,
Nicholas V. Morozovsky,
Andrei L Kholkin,
Yulian M. Vysochanskii,
Sergei V. Kalinin
Abstract:
Using Landau-Ginzburg-Devonshire (LGD) phenomenological approach we analyze the bending-induced re-distribution of electric polarization and field, elastic stresses and strains inside ultrathin layers of van der Waals ferrielectrics. We consider a CuInP2S6 (CIPS) thin layer with fixed edges and suspended central part, the bending of which is induced by external forces. The unique aspect of CIPS is…
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Using Landau-Ginzburg-Devonshire (LGD) phenomenological approach we analyze the bending-induced re-distribution of electric polarization and field, elastic stresses and strains inside ultrathin layers of van der Waals ferrielectrics. We consider a CuInP2S6 (CIPS) thin layer with fixed edges and suspended central part, the bending of which is induced by external forces. The unique aspect of CIPS is the existence of two ferrielectric states, FI1 and FI2, corresponding to big and small polarization values, which arise due to the specific four-well potential of the eighth-order LGD functional. When the CIPS layer is flat, the single-domain FI1 state is stable in the central part of the layer, and the FI2 states are stable near the fixed edges. With an increase of the layer bending below the critical value, the sizes of the FI2 states near the fixed edges decreases, and the size of the FI1 region increases. When the bending exceeds the critical value, the edge FI2 states disappear being substituted by the FI1 state, but they appear abruptly near the inflection regions and expand as the bending increases. The bending-induced isostructural FI1-FI2 transition is specific for the bended van der Waals ferrielectrics described by the eighth (or higher) order LGD functional with consideration of linear and nonlinear electrostriction couplings. The isostructural transition, which is revealed in the vicinity of room temperature, can significantly reduce the coercive voltage of ferroelectric polarization reversal in CIPS nanoflakes, allowing for the curvature-engineering control of various flexible nanodevices.
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Submitted 24 May, 2023;
originally announced May 2023.
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Disentangling stress and curvature effects in layered 2D ferroelectric CuInP2S6
Authors:
Yongtao Liu,
Anna N. Morozovska,
Ayana Ghosh,
Kyle P. Kelley,
Eugene A. Eliseev,
**yuan Yao,
Ying Liu,
Sergei V. Kalinin
Abstract:
Nanoscale ferroelectric 2D materials offer unique opportunity to investigate curvature and strain effects on materials functionalities. Among these, CuInP2S6 (CIPS) has attracted tremendous research interest in recent years due to combination of room temperature ferroelectricity, scalability to a few layers thickness, and unique ferrielectric properties due to coexistence of 2 polar sublattices. H…
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Nanoscale ferroelectric 2D materials offer unique opportunity to investigate curvature and strain effects on materials functionalities. Among these, CuInP2S6 (CIPS) has attracted tremendous research interest in recent years due to combination of room temperature ferroelectricity, scalability to a few layers thickness, and unique ferrielectric properties due to coexistence of 2 polar sublattices. Here, we explore the local curvature and strain effect on the polarization in CIPS via piezoresponse force microscopy and spectroscopy. To explain the observed behaviors and decouple the curvature and strain effects in 2D CIPS, we introduce finite element Landau-Ginzburg-Devonshire model. The results show that bending induces ferrielectric domains in CIPS, and the polarization-voltage hysteresis loops differ in bending and non-bending regions. Our simulation indicates that the flexoelectric effect can affect local polarization hysteresis. These studies open a novel pathway for the fabrication of curvature-engineered nanoelectronic devices.
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Submitted 23 May, 2023;
originally announced May 2023.
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Anomalous Polarization Reversal in Strained Thin Films of CuInP$_2$S$_6$
Authors:
Anna N. Morozovska,
Eugene A. Eliseev,
Ayana Ghosh,
Mykola E. Yelisieiev,
Yulian M. Vysochanskii,
Sergei V. Kalinin
Abstract:
Strain-induced transitions of polarization reversal in thin films of a ferrielectric CuInP$_2$S$_6$ (CIPS) with ideally-conductive electrodes is explored using the Landau-Ginzburg-Devonshire (LGD) approach with an eighth-order free energy expansion in polarization powers. Due to multiple potential wells, the height and position of which are temperature- and strain-dependent, the energy profiles of…
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Strain-induced transitions of polarization reversal in thin films of a ferrielectric CuInP$_2$S$_6$ (CIPS) with ideally-conductive electrodes is explored using the Landau-Ginzburg-Devonshire (LGD) approach with an eighth-order free energy expansion in polarization powers. Due to multiple potential wells, the height and position of which are temperature- and strain-dependent, the energy profiles of CIPS can flatten in the vicinity of the non-zero polarization states. This behavior differentiates these materials from classical ferroelectrics with the first or second order ferroelectric-paraelectric phase transition, for which potential energy profiles can be shallow or flat near the transition point only, corresponding to zero spontaneous polarization. Thereby we reveal an unusually strong effect of the mismatch strain on the out-of-plane polarization reversal, hysteresis loops shape, dielectric susceptibility, and piezoelectric response of CIPS films. In particular, by varying the sign of the mismatch strain and its magnitude in a narrow range, quasi-static hysteresis-less paraelectric curves can transform into double, triple, and other types of pinched and single hysteresis loops. The strain effect on the polarization reversal is opposite, i.e., "anomalous", in comparison with many other ferroelectric films in that the out-of-plane remanent polarization and coercive field increases strongly for tensile strains, meanwhile the polarization decreases or vanish for compressive strains. We explain the effect by "inverted" signs of linear and nonlinear electrostriction coupling coefficients of CIPS and their strong temperature dependence. For definite values of temperature and mismatch strain, the low-frequency hysteresis loops of polarization may exhibit negative slope in the relatively narrow range of external field amplitude and frequency.
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Submitted 8 April, 2023;
originally announced April 2023.
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Light-Induced Transitions of Polar State and Domain Morphology of Photo-Ferroelectric Nanoparticles
Authors:
Eugene A. Eliseev,
Anna N. Morozovska,
Yulian M. Vysochanskii,
Lesya P. Yurchenko,
Venkatraman Gopalan,
Long-Qing Chen
Abstract:
Using the Landau-Ginzburg-Devonshire approach, we study light-induced phase transitions, evolution of polar state and domain morphology in photo-ferroelectric nanoparticles (NPs). Light exposure increases the free carrier density near the NP surface and may in turn induce phase transitions from the nonpolar paraelectric to the polar ferroelectric phase. Using the uniaxial photo-ferroelectric Sn2P2…
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Using the Landau-Ginzburg-Devonshire approach, we study light-induced phase transitions, evolution of polar state and domain morphology in photo-ferroelectric nanoparticles (NPs). Light exposure increases the free carrier density near the NP surface and may in turn induce phase transitions from the nonpolar paraelectric to the polar ferroelectric phase. Using the uniaxial photo-ferroelectric Sn2P2S6 as an example, we show that visible light exposure induces the appearance and vanishing of striped, labyrinthine or curled domains and changes in the polarization switching hysteresis loop shape from paraelectric curves to double, pinched and single loops, as well as the shifting in the position of the tricritical point. Furthermore, we demonstrate that an ensemble of non-interacting photo-ferroelectric NPs may exhibit superparaelectric-like features at the tricritical point, such as strongly frequency-dependent giant piezoelectric and dielectric responses, which can potentially be exploited for piezoelectric applications.
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Submitted 17 November, 2023; v1 submitted 8 March, 2023;
originally announced March 2023.
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Stress-Induced Transformations of Polarization Switching in CuInP$_2$S$_6$ Nanoparticles
Authors:
Anna N. Morozovska,
Eugene A. Eliseev,
Mykola E. Yelisieiev,
Yulian M. Vysochanskii,
Dean R. Evans
Abstract:
Using the Landau-Ginzburg-Devonshire approach, we study stress-induced transformations of polarization switching in ferrielectric CuInP2S6 nanoparticles for three different shapes: a disk, a sphere, and a needle. Semiconducting properties of a nanoparticle are modeled by a surface charge layer, whose effective screening length can be rather small due to the field-effect. We reveal a very strong an…
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Using the Landau-Ginzburg-Devonshire approach, we study stress-induced transformations of polarization switching in ferrielectric CuInP2S6 nanoparticles for three different shapes: a disk, a sphere, and a needle. Semiconducting properties of a nanoparticle are modeled by a surface charge layer, whose effective screening length can be rather small due to the field-effect. We reveal a very strong and unusual influence of hydrostatic pressure on the appearance of polarization switching in CuInP2S6 nanoparticles, hysteresis loops shape, magnitude of the remanent polarization, and coercive fields, and explain the effects by the anomalous temperature dependence and "inverted" signs of CuInP2S6 linear and nonlinear electrostriction coupling coefficients. In particular, by varying the sign of the applied pressure (from tension to compression) and its magnitude (from zero to several hundreds of MPa), quasi-static hysteresis-less paraelectric curves can transform into double, triple, pinched, or single hysteresis loops. Due to the sufficiently wide temperature and pressure ranges of double, triple, and pinched hysteresis loop stability (at least in comparison with many other ferroelectrics), CuInP2S6 nanodisks can be of particular interest for applications in energy storage (in the region of double loops), CuInP2S6 nanospheres maybe suitable for dynamic random access multibit memory, and CuInP2S6 nanoneedles are promising for non-volatile multibit memory cells (in the regions of triple and pinched loops). The stress control of the polarization switching scenario allows the creation of advanced piezo-sensors based on CuInP2S6 nanocomposites.
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Submitted 19 February, 2023; v1 submitted 14 February, 2023;
originally announced February 2023.
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Landau-Ginzburg theory of charge density wave formation accompanying lattice and electronic long-range ordering
Authors:
Anna Morozovska,
Eugene Eliseev,
Venkatraman Gopalan,
Long-Qing Chen
Abstract:
We propose an analytical Landau-Ginzburg theory of the charge density waves coupled with lattice and electronic long-range order parameters. Examples of long-range order include electronic wave function of superconducting Cooper pairs, structural distortions, electric polarization, and magnetization. We formulate the Landau-Ginzburg free energy density as power expansion with respect to the charge…
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We propose an analytical Landau-Ginzburg theory of the charge density waves coupled with lattice and electronic long-range order parameters. Examples of long-range order include electronic wave function of superconducting Cooper pairs, structural distortions, electric polarization, and magnetization. We formulate the Landau-Ginzburg free energy density as power expansion with respect to the charge density and other long-range order parameters, as well as their spatial gradients, and biquadratic coupling terms. We introduced a biquadratic coupling between the charge density gradient and long-range order parameters, as well as nonlinear higher gradients of the long-range order parameters. The biquadratic gradient coupling is critical to the appearance of different spatially-modulated phases in charge-ordered ferroics and high-temperature superconductors. We derived the thermodynamic conditions for the stability of the spatially-modulated phases, which are the intertwined spatial waves of charge density and lattice/electronic long-range order. The analytical expressions for the energies of different phases, corresponding order parameters, charge density waves amplitudes and modulation periods, obtained in this work, can be employed to guide the comprehensive physical explanation, deconvolution and Bayesian analysis of experimental data on quantum materials ranging from charge-ordered ferroics to high-temperature superconductors.
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Submitted 25 April, 2023; v1 submitted 20 December, 2022;
originally announced December 2022.
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Screening-Induced Phase Transitions in Core-Shell Ferroic Nanoparticles
Authors:
Anna N. Morozovska,
Eugene A. Eliseev,
Yulian M. Vysochanskii,
Viktoria V. Khist,
Dean R. Evans
Abstract:
Using the Landau-Ginzburg-Devonshire approach, we study screening-induced phase transitions in core-shell ferroic nanoparticles for three different shapes: an oblate disk, a sphere, and a prolate needle. The nanoparticle is made of a ferroic CuInP2S6 core and covered by a "tunable" screening shell made of a phase-change material with a conductivity that varies as the material changes between semic…
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Using the Landau-Ginzburg-Devonshire approach, we study screening-induced phase transitions in core-shell ferroic nanoparticles for three different shapes: an oblate disk, a sphere, and a prolate needle. The nanoparticle is made of a ferroic CuInP2S6 core and covered by a "tunable" screening shell made of a phase-change material with a conductivity that varies as the material changes between semiconductor and metallic phases. We reveal a critical influence of the shell screening length on the phase transitions and spontaneous polarization of the nanoparticle core. Since the tunable screening shell allows the control of the polar state and phase diagrams of core-shell ferroic nanoparticles, the obtained results can be of particular interest for applications in nonvolatile memory cells.
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Submitted 21 September, 2022;
originally announced September 2022.
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Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?
Authors:
Eugene A. Eliseev,
Anna N. Morozovska,
Lesya P. Yurchenko,
Maksym V. Strikha
Abstract:
We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin layers of dielectric SiO2 and weak ferroelectric HfO2. It appeared possible to achieve a quasi-steady-state negative capacitance of the HfO2 layer, C_(HfO_2 )<0, if…
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We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin layers of dielectric SiO2 and weak ferroelectric HfO2. It appeared possible to achieve a quasi-steady-state negative capacitance of the HfO2 layer, C_(HfO_2 )<0, if the layer thickness is close to the critical thickness of the size-induced ferroelectric-paraelectric phase transition. The quasi-steady-state negative capacitance, being a very slow-varying transient state of the ferroelectric, corresponds to a positive capacitance of the whole system, and so its appearance does not break any thermodynamic principle. Implementation of the quasi-steady-state negative capacitance C_ins of the gate insulator can open the principal possibility to reduce the MOSFET subthreshold swing below the critical value, and to decrease the gate voltage below the fundamental Boltzmann limit. However, we failed to found the parameters for which C_ins is negative in the quasi-steady states; and thus, the negative C_(HfO_2 ) cannot reduce the subthreshold swing below the fundamental limit. Nevertheless, the increase in C_ins, related with C_(HfO_2 )<0, can decrease the swing above the limit, reduce device heating during the operation cycles, and thus contribute to further improvements of the MOSFET performances.
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Submitted 28 August, 2022;
originally announced August 2022.
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Ferroelectricity in Hafnia Controlled via Surface Electrochemical State
Authors:
Kyle P. Kelley,
Anna N. Morozovska,
Eugene A. Eliseev,
Yongtao Liu,
Shelby S. Fields,
Samantha T. Jaszewski,
Takanori Mimura,
Jon F. Ihlefeld,
Sergei V. Kalinin
Abstract:
Ferroelectricity in binary oxides including hafnia and zirconia have riveted the attention of the scientific community due to highly unconventional physical mechanisms and the potential for integration of these materials into semiconductor workflows. Over the last decade, it has been argued that behaviors such as wake-up phenomena and an extreme sensitivity to electrode and processing conditions s…
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Ferroelectricity in binary oxides including hafnia and zirconia have riveted the attention of the scientific community due to highly unconventional physical mechanisms and the potential for integration of these materials into semiconductor workflows. Over the last decade, it has been argued that behaviors such as wake-up phenomena and an extreme sensitivity to electrode and processing conditions suggests that ferroelectricity in these materials is strongly coupled with additional mechanisms, with possible candidates including the ionic subsystem or strain. Here we argue that the properties of these materials emerge due to the interplay between the bulk competition between ferroelectric and structural instabilities, similar to that in classical antiferroelectrics, coupled with non-local screening mediated by the finite density of states at surfaces and internal interfaces. Via decoupling of electrochemical and electrostatic controls realized via environmental and ultra-high vacuum PFM, we show that these materials demonstrate a rich spectrum of ferroic behaviors including partial pressure- and temperature-induced transitions between FE and AFE behaviors. These behaviors are consistent with an antiferroionic model and suggest novel strategies for hafnia-based device optimization.
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Submitted 25 July, 2022;
originally announced July 2022.
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Probing temperature-induced phase transitions at individual ferroelectric domain walls
Authors:
Kyle P. Kelley,
Sergei V. Kalinin,
Eugene Eliseev,
Shivaranjan Raghuraman,
Stephen Jesse,
Peter Maksymovych,
Anna N. Morozovska
Abstract:
Ferroelectric domain walls have emerged as one of the most fascinating objects in condensed matter physics due to the broad variability of functional behaviors they exhibit. However, the vast majority of domain walls studies have been focused on bias-induced dynamics and transport behaviors. Here, we introduce the scanning probe microscopy approach based on piezoresponse force microscopy (PFM) wit…
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Ferroelectric domain walls have emerged as one of the most fascinating objects in condensed matter physics due to the broad variability of functional behaviors they exhibit. However, the vast majority of domain walls studies have been focused on bias-induced dynamics and transport behaviors. Here, we introduce the scanning probe microscopy approach based on piezoresponse force microscopy (PFM) with a dynamically heated probe, combining local heating and local biasing of the material. This approach is used to explore the thermal polarization dynamics in soft Sn2P2S6 ferroelectrics, and allows for the exploration of phase transitions at individual domain walls. The strong and weak modulation regimes for the thermal PFM are introduced. The future potential applications of heated probe approach for functional SPM measurements including piezoelectric, elastic, microwave, and transport measurements are discussed.
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Submitted 7 July, 2022;
originally announced July 2022.
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Impact of 3D curvature on the polarization orientation in non-Ising domain walls
Authors:
Ulises Acevedo-Salas,
Boris Croes,
Yide Zhang,
Olivier Cregut,
Kokou Dodzi Dorkenoo,
Benjamin Kirbus,
Ekta Singh,
Henrik Beccard,
Michael Rüsing,
Lukas M. Eng,
Riccardo Hertel,
Eugene A. Eliseev,
Anna N. Morozovska,
Salia Cherifi-Hertel
Abstract:
Ferroelectric domain boundaries are quasi-two-dimensional functional interfaces with high prospects for nanoelectronic applications. Despite their reduced dimensionality, they can exhibit complex non-Ising polarization configurations and unexpected physical properties. Here, the impact of the three-dimensional (3D) curvature on the polarization profile of nominally uncharged 180° domain walls in L…
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Ferroelectric domain boundaries are quasi-two-dimensional functional interfaces with high prospects for nanoelectronic applications. Despite their reduced dimensionality, they can exhibit complex non-Ising polarization configurations and unexpected physical properties. Here, the impact of the three-dimensional (3D) curvature on the polarization profile of nominally uncharged 180° domain walls in LiNbO3 is studied using second-harmonic generation microscopy and 3D polarimetry analysis. Correlations between the domain wall curvature and the variation of its internal polarization unfold in the form of modulations of the Néel-like character, which we attribute to the flexoelectric effect. While the Néel-like character originates mainly from the tilting of the domain wall, the internal polarization adjusts its orientation due to the synergetic upshot of dipolar and monopolar bound charges and their variation with the 3D curvature. Our results show that curved interfaces in solid crystals may offer a rich playground for tailoring nanoscale polar states.
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Submitted 4 July, 2022;
originally announced July 2022.
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Electric field control of labyrinth domain structures in core-shell ferroelectric nanoparticles
Authors:
Anna N. Morozovska,
Eugene A. Eliseev,
Salia Cherifi-Hertel,
Dean R. Evans,
Riccardo Hertel
Abstract:
In the framework of the Landau-Ginzburg-Devonshire (LGD) approach, we studied the possibility of controlling the polarity and chirality of equilibrium domain structures by a homogeneous external electric field in a nanosized ferroelectric core covered with an ultra-thin shell of screening charge. Under certain screening lengths and core sizes, the minimum of the LGD energy, which consists of Landa…
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In the framework of the Landau-Ginzburg-Devonshire (LGD) approach, we studied the possibility of controlling the polarity and chirality of equilibrium domain structures by a homogeneous external electric field in a nanosized ferroelectric core covered with an ultra-thin shell of screening charge. Under certain screening lengths and core sizes, the minimum of the LGD energy, which consists of Landau-Devonshire energy, Ginzburg polarization gradient energy, and electrostatic terms, leads to the spontaneous appearance of stable labyrinth domain structures in the core. The labyrinths evolve from an initial polarization distribution consisting of arbitrarily small randomly oriented nanodomains. The equilibrium labyrinth structure is weakly influenced by details of the initial polarization distribution, such that one can obtain a quasi-continuum of nearly degenerate labyrinth structures, whose number is limited only by the mesh discretization density. Applying a homogeneous electric field to a nanoparticle with labyrinth domains, and subsequently removing it, allows inducing changes to the labyrinth structure, as the maze polarity is controlled by a field projection on the particle polar axis. Under specific conditions of the screening charge relaxation, the quasi-static dielectric susceptibility of the labyrinth structure can be negative, potentially leading to a negative capacitance effect. Considering the general validity of the LGD approach, we expect that an electric field control of labyrinth domains is possible in many spatially-confined nanosized ferroics, which can be potentially interesting for advanced cryptography and modern nanoelectronics.
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Submitted 30 June, 2022;
originally announced July 2022.
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Phase transitions in ferroelectric domain walls
Authors:
Eugene A. Eliseev,
Maya D. Glinchuk,
Lesya P. Yurchenko,
Peter Maksymovych,
Anna N. Morozovska
Abstract:
Despite multiple efforts, there exist many unsolved fundamental problems related with detection and analysis of internal polarization structure and related phase transitions in ferroelectric domain walls. Their solution can be very important for the progress in domain wall nanoelectronics and related applications in advanced memories and other information technologies. Here, we theoretically study…
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Despite multiple efforts, there exist many unsolved fundamental problems related with detection and analysis of internal polarization structure and related phase transitions in ferroelectric domain walls. Their solution can be very important for the progress in domain wall nanoelectronics and related applications in advanced memories and other information technologies. Here, we theoretically study the features of phase transitions in the domain walls, which are potentially detectable by the scanning probe capacitance microwave microscopy. The finite element modelling based on the Landau-Ginzburg-Devonshire theory is performed for the capacitance changes related with the domain wall motion in a multiaxial ferroelectric BaTiO$_3$.
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Submitted 4 January, 2023; v1 submitted 3 June, 2022;
originally announced June 2022.
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Dynamic control of ferroionic states in ferroelectric nanoparticles
Authors:
Anna N. Morozovska,
Sergei V. Kalinin,
Mykola E. Yelisieiev,
Jonghee Yang,
Mahshid Ahmadi,
Eugene. A. Eliseev,
Dean R. Evans
Abstract:
The polar states of uniaxial ferroelectric nanoparticles interacting with a surface system of electronic and ionic charges with a broad distribution of mobilities is explored, which corresponds to the experimental case of nanoparticles in solution or ambient conditions. The nonlinear interactions between the ferroelectric dipoles and surface charges with slow relaxation dynamics in an external fie…
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The polar states of uniaxial ferroelectric nanoparticles interacting with a surface system of electronic and ionic charges with a broad distribution of mobilities is explored, which corresponds to the experimental case of nanoparticles in solution or ambient conditions. The nonlinear interactions between the ferroelectric dipoles and surface charges with slow relaxation dynamics in an external field lead to the emergence of a broad range of paraelectric-like, antiferroelectric-like ionic, and ferroelectric-like ferroionic states. The crossover between these states can be controlled not only by the static characteristics of the surface charges, but also by their relaxation dynamics in the applied field. Obtained results are not only promising for advanced applications of ferroelectric nanoparticles in nanoelectronics and optoelectronics, they also offer strategies for experimental verification.
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Submitted 24 February, 2022;
originally announced February 2022.
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Hypothesis-Driven Automated Experiment in Scanning Probe Microscopy: Exploring the Domain Growth Laws in Ferroelectric Materials
Authors:
Yongtao Liu,
Anna Morozovska,
Eugene Eliseev,
Kyle P. Kelley,
Rama Vasudevan,
Maxim Ziatdinov,
Sergei V. Kalinin
Abstract:
We report the development and implementation of a hypothesis learning based automated experiment, in which the microscope operating in the autonomous mode identifies the physical laws behind the material's response. Specifically, we explore the bias induced transformations that underpin the functionality of broad classes of devices and functional materials from batteries and memristors to ferroele…
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We report the development and implementation of a hypothesis learning based automated experiment, in which the microscope operating in the autonomous mode identifies the physical laws behind the material's response. Specifically, we explore the bias induced transformations that underpin the functionality of broad classes of devices and functional materials from batteries and memristors to ferroelectrics and antiferroelectrics. Optimization and design of these materials require probing the mechanisms of these transformations on the nanometer scale as a function of the broad range of control parameters such as applied potential and time, often leading to experimentally intractable scenarios. At the same time, often the behaviors of these systems are understood within potentially competing theoretical models, or hypotheses. Here, we develop a hypothesis list that covers the possible limiting scenarios for the domain growth, including thermodynamic, domain wall pinning, and screening limited. We further develop and experimentally implement the hypothesis driven automated experiment in Piezoresponse Force Microscopy, autonomously identifying the mechanisms of the bias induced domain switching. This approach can be applied for a broad range of physical and chemical experiments with relatively low dimensional control parameter space and for which the possible competing models of the system behavior that ideally cover the full range of physical eventualities are known or can be created. These include other scanning probe microscopy modalities such as force distance curve measurements and nanoindentation, as well as materials synthesis and optimization.
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Submitted 2 February, 2022;
originally announced February 2022.
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Size Effect of Local Current-Voltage Characteristics of MX$_2$ Nanoflakes: Local Density of States Reconstruction from Scanning Tunneling Microscopy Experiments
Authors:
Anna N. Morozovska,
Hanna V. Shevliakova,
Yaroslava Yu. Lopatina,
Mykola Yelisieiev,
Galina I. Dovbeshko,
Marina V. Olenchuk,
G. S. Svechnikov,
Sergei V. Kalinin,
Yunseok Kim,
Eugene A. Eliseev
Abstract:
Local current-voltage characteristics for low-dimensional transition metal dichalcogenides (LD-TMD), as well as the reconstruction of their local density of states (LDOS) from scanning tunneling microscopy (STM) experiments is of fundamental interest and can be useful for advanced applications. Most of existing models are either hardly applicable for the LD-TMD of complex shape (e.g., those based…
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Local current-voltage characteristics for low-dimensional transition metal dichalcogenides (LD-TMD), as well as the reconstruction of their local density of states (LDOS) from scanning tunneling microscopy (STM) experiments is of fundamental interest and can be useful for advanced applications. Most of existing models are either hardly applicable for the LD-TMD of complex shape (e.g., those based on Simmons approach), or necessary for solving an ill-defined integral equation to deconvolute the unknown LDOS (e.g., those based on Tersoff approach). Using a serial expansion of Tersoff formulae, we propose a flexible method how to reconstruct the LDOS from local current-voltage characteristics measured in STM experiments. We established a set of key physical parameters, which characterize the tunneling current of a STM probe - sample contact and the sample LDOS expanded in Gaussian functions. Using a direct variational method coupled with a probabilistic analysis, we determine these parameters from the STM experiments for MoS2 nanoflakes with different number of layers. The main result is the reconstruction of the LDOS in a relatively wide energy range around a Fermi level, which allows insight in the local band structure of LD-TMDs. The reconstructed LDOS reveals pronounced size effects for the single-layer, bi-layer and three-layer MoS$_2$ nanoflakes, which we relate with low dimensionality and strong bending/corrugation of the nanoflakes. We hope that the proposed elaboration of the Tersoff approach allowing LDOS reconstruction will be of urgent interest for quantitative description of STM experiments, as well as useful for the microscopic physical understanding of the surface, strain and bending contribution to LD-TMDs electronic properties.
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Submitted 25 January, 2022;
originally announced January 2022.
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Temperature-assisted Piezoresponse Force Microscopy: Probing Local Temperature-Induced Phase Transitions in Ferroics
Authors:
Anna N. Morozovska,
Eugene A. Eliseev,
Kyle Kelley,
Sergei V. Kalinin
Abstract:
Combination of local heating and biasing at the tip-surface junction in temperature-assisted piezoresponse force microscopy (tPFM) opens the pathway for probing local temperature induced phase transitions in ferroics, exploring the temperature dependence of polarization dynamics in ferroelectrics, and potentially discovering coupled phenomena driven by strong temperature- and electric field gradie…
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Combination of local heating and biasing at the tip-surface junction in temperature-assisted piezoresponse force microscopy (tPFM) opens the pathway for probing local temperature induced phase transitions in ferroics, exploring the temperature dependence of polarization dynamics in ferroelectrics, and potentially discovering coupled phenomena driven by strong temperature- and electric field gradients. Here, we analyze the signal formation mechanism in tPFM and explore the interplay between thermal- and bias-induced switching in model ferroelectric materials. We further explore the contributions of the flexoelectric and thermopolarization effects to the local electromechanical response, and demonstrate that the latter can be significant for "soft" ferroelectrics. These results establish the framework for quantitative interpretation of tPFM observations, predict the emergence the non-trivial switching and relaxation phenomena driven by non-local thermal gradient-induced polarization switching, and open a pathway for exploring the physics of thermopolarization effects in various non-centrosymmetric and centrosymmetric materials.
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Submitted 20 January, 2022;
originally announced January 2022.
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Hypothesis Learning in Automated Experiment: Application to Combinatorial Materials Libraries
Authors:
Maxim Ziatdinov,
Yongtao Liu,
Anna N. Morozovska,
Eugene A. Eliseev,
Xiaohang Zhang,
Ichiro Takeuchi,
Sergei V. Kalinin
Abstract:
Machine learning is rapidly becoming an integral part of experimental physical discovery via automated and high-throughput synthesis, and active experiments in scattering and electron/probe microscopy. This, in turn, necessitates the development of active learning methods capable of exploring relevant parameter spaces with the smallest number of steps. Here we introduce an active learning approach…
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Machine learning is rapidly becoming an integral part of experimental physical discovery via automated and high-throughput synthesis, and active experiments in scattering and electron/probe microscopy. This, in turn, necessitates the development of active learning methods capable of exploring relevant parameter spaces with the smallest number of steps. Here we introduce an active learning approach based on co-navigation of the hypothesis and experimental spaces. This is realized by combining the structured Gaussian Processes containing probabilistic models of the possible system's behaviors (hypotheses) with reinforcement learning policy refinement (discovery). This approach closely resembles classical human-driven physical discovery, when several alternative hypotheses realized via models with adjustable parameters are tested during an experiment. We demonstrate this approach for exploring concentration-induced phase transitions in combinatorial libraries of Sm-doped BiFeO3 using Piezoresponse Force Microscopy, but it is straightforward to extend it to higher-dimensional parameter spaces and more complex physical problems once the experimental workflow and hypothesis-generation are available.
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Submitted 20 April, 2022; v1 submitted 13 December, 2021;
originally announced December 2021.
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Observability of negative capacitance of a ferroelectric film: Theoretical predictions
Authors:
Eugene. A. Eliseev,
Mykola E. Yelisieiev,
Sergei V. Kalinin,
Anna N. Morozovska
Abstract:
We theoretically explore mechanisms that can potentially give rise to the steady-state and transient negative capacitance in a uniaxial ferroelectric film stabilized by a dielectric layer. The analytical expressions for the steady-state capacitance of a single-domain and poly-domain states are derived within Landau-Ginzburg-Devonshire approach and used to study the state stability vs. the domain s…
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We theoretically explore mechanisms that can potentially give rise to the steady-state and transient negative capacitance in a uniaxial ferroelectric film stabilized by a dielectric layer. The analytical expressions for the steady-state capacitance of a single-domain and poly-domain states are derived within Landau-Ginzburg-Devonshire approach and used to study the state stability vs. the domain splitting as a function of dielectric layer thickness. Analytical expressions for the critical thickness of the dielectric layer, polarization amplitude, equilibrium domain period and susceptibility are obtained and corroborated by finite element modelling. We further explore the possible effects of nonlinear screening by two types of screening charges at the ferroelectric-dielectric interface and show that if at least one of the screening charges is very slow, the total polarization dynamics can exhibit complex time- and voltage dependent behaviors that can be interpreted as an observable negative capacitance. In this setting, the transient negative capacitance effect is accompanied by almost zero dielectric susceptibility in a wide voltage range and low frequencies. These results may help to elucidate the observation of the transient negative capacitance in thin ferroelectric films, and identify materials systems that can give rise to the behavior.
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Submitted 13 May, 2022; v1 submitted 9 December, 2021;
originally announced December 2021.
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Enhanced ferroelectric properties of low-annealed SrBi2(Ta,Nb)2O9 thin films for NvFeRAM applications
Authors:
O. M. Fesenko,
A. D. Yaremkevich,
T. V. Tsebrienko,
O. P. Bydnyk,
Lei Wang,
A. V. Semchenko,
V. V. Sidski,
A. N. Morozovska
Abstract:
Micro-Raman spectroscopy and X-ray diffraction have been used to explore the lattice dynamics of Nb-substituted SrBi2(Ta1-xNbx)2O9 (SBTN) crystalline thin films annealed at low temperature, 700oC. It turned out that SrBi2(Ta1-xNbx)2O9 films consist of fine-grained spherical structures for x=0.1-0.4, while the formation of rod-like grains occurs for x=0.5 due to the stress-induced transformation of…
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Micro-Raman spectroscopy and X-ray diffraction have been used to explore the lattice dynamics of Nb-substituted SrBi2(Ta1-xNbx)2O9 (SBTN) crystalline thin films annealed at low temperature, 700oC. It turned out that SrBi2(Ta1-xNbx)2O9 films consist of fine-grained spherical structures for x=0.1-0.4, while the formation of rod-like grains occurs for x=0.5 due to the stress-induced transformation of the thin film perovskite structure. Moreover, it was revealed that during Nb cationic substitution Aurivillius phase formation was enhanced and become dominated in SBTN thin films and fluorite/pyrochlore phase formation was highly suppressed. We assume that these changes are conditioned by the ferrodistortion occurring in ferroic perovskites, namely by the tilting distortion of (Ta,Nb)O6 octahedra for x=0.2-0.5. The octahedral tilting distortion can change the coordination environment of the A-cite cation, as well as it lowers the SBTN symmetry due to the differences in ionic radius and mass between Ta and Nb in the B-sites, that can lead to significant changes of the SBTN crystal structure. The same nonmonotonic trends were observed for the ferroelectric perovskite phase fraction and remanent polarization on Nb content in SBTN films. The substituting Nb atoms with a concentration of 10-20 % made it possible to increase the remanent polarization in 3 times and raise the perovskite phase fraction from 66% to 87%. Therefore, obtained results can be used for the production of lead-free thin films with a high remanent polarization under low annealing temperature, being promising for advanced nonvolatile random access ferroelectric memory (NvFeRAM) applications.
Keywords: ferroelectric, sol-gel method, perovskite structure, crystallization annealing, defects, remanent polarization, SBTN films, Raman spectroscopy, Landau-Devonshire approach.
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Submitted 15 May, 2023; v1 submitted 8 December, 2021;
originally announced December 2021.
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Flexoelectric and piezoelectric coupling in a bended MoS$_2$ monolayer
Authors:
Hanna V. Shevliakova,
Semen O. Yesylevskyy,
Ihor Kupchak,
Galina I. Dovbeshko,
Yunseok Kim,
Anna N. Morozovska
Abstract:
Low-dimensional (LD) transition metal dichalcogenides (TMDs) in the form of nanoflakes, which consist of one or several layers, are the subject of intensive fundamental and applied research. Due to the size-induced transition from a bulk to nanoscale, they can be both nonpolar, piezoelectric or even ferroelectric. Also, in terms of electronic properties, they can be direct-band semiconductors, sem…
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Low-dimensional (LD) transition metal dichalcogenides (TMDs) in the form of nanoflakes, which consist of one or several layers, are the subject of intensive fundamental and applied research. Due to the size-induced transition from a bulk to nanoscale, they can be both nonpolar, piezoelectric or even ferroelectric. Also, in terms of electronic properties, they can be direct-band semiconductors, semi-metals or even metals. The tuning of the electronic properties in the LD-TMDs are commonly related with applied strains and strain gradients, which can affect strongly their polar properties via the piezoelectric and flexoelectric couplings. Using the density functional theory (DFT) and phenomenological Landau approach, we studied the bended 2H-MoS$_2$ monolayer and analyzed its flexoelectric and piezoelectric properties. The dependences of the dipole moment, strain and strain gradient on the coordinate along the layer were calculated. From these dependences the components of the flexoelectric and piezoelectric tensors have been determined and analyzed. Obtained results are useful for applications of LD-TMDs in strain engineering and flexible electronics.
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Submitted 27 September, 2021;
originally announced September 2021.
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Chemical control of polarization in thin strained films of a multiaxial ferroelectric: phase diagrams and polarization rotation
Authors:
Anna N. Morozovska,
Eugene A. Eliseev,
Arpan Biswas,
Hanna V. Shevliakova,
Nicholas V. Morozovsky,
Sergei V. Kalinin
Abstract:
The emergent behaviors in thin films of a multiaxial ferroelectric due to an electrochemical coupling between the rotating polarization and surface ions are explored within the framework of the 2-4 Landau-Ginzburg-Devonshire (LGD) thermodynamic potential combined with the Stephenson-Highland (SH) approach. The combined LGD-SH approach allows to describe the electrochemical switching and rotation o…
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The emergent behaviors in thin films of a multiaxial ferroelectric due to an electrochemical coupling between the rotating polarization and surface ions are explored within the framework of the 2-4 Landau-Ginzburg-Devonshire (LGD) thermodynamic potential combined with the Stephenson-Highland (SH) approach. The combined LGD-SH approach allows to describe the electrochemical switching and rotation of polarization vector in the multiaxial ferroelectric film covered by surface ions with a charge density dependent to the relative partial oxygen pressure. We calculate the phase diagrams and analyze the dependence of polarization components on the applied voltage, and discuss the peculiarities of quasi-static ferroelectric, dielectric and piezoelectric hysteresis loops in thin strained multiaxial ferroelectric films. The nonlinear surface screening by oxygen ions makes the diagrams very different from the known diagrams of e.g., strained BaTiO3 films. Quite unexpectedly we predict the appearance of the ferroelectric reentrant phases. Obtained results point on the possibility to control the appearance and features of ferroelectric, dielectric and piezoelectric hysteresis in multiaxial FE films covered by surface ions by varying their concentration via the partial oxygen pressure. The LGD-SH description of a multiaxial FE film can be further implemented within the Bayesian optimization framework, opening the pathway towards predictive materials optimization.
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Submitted 14 September, 2021;
originally announced September 2021.
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Multi-objective Bayesian optimization of ferroelectric materials with interfacial control for memory and energy storage applications
Authors:
Arpan Biswas,
Anna N. Morozovska,
Maxim Ziatdinov,
Eugene A. Eliseev,
Sergei V. Kalinin
Abstract:
Optimization of materials performance for specific applications often requires balancing multiple aspects of materials functionality. Even for the cases where generative physical model of material behavior is known and reliable, this often requires search over multidimensional parameter space to identify low-dimensional manifold corresponding to required Pareto front. Here we introduce the multi-o…
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Optimization of materials performance for specific applications often requires balancing multiple aspects of materials functionality. Even for the cases where generative physical model of material behavior is known and reliable, this often requires search over multidimensional parameter space to identify low-dimensional manifold corresponding to required Pareto front. Here we introduce the multi-objective Bayesian Optimization (MOBO) workflow for the ferroelectric/anti-ferroelectric performance optimization for memory and energy storage applications based on the numerical solution of the Ginzburg-Landau equation with electrochemical or semiconducting boundary conditions. MOBO is a low computational cost optimization tool for expensive multi-objective functions, where we update posterior surrogate Gaussian process models from prior evaluations, and then select future evaluations from maximizing an acquisition function. Using the parameters for a prototype bulk antiferroelectric (PbZrO3), we first develop a physics-driven decision tree of target functions from the loop structures. We further develop a physics-driven MOBO architecture to explore multidimensional parameter space and build Pareto-frontiers by maximizing two target functions jointly: energy storage and loss. This approach allows for rapid initial materials and device parameter selection for a given application and can be further expanded towards the active experiment setting. The associated notebooks provide both the tutorial on MOBO and allow to reproduce the reported analyses and apply them to other systems (https://github.com/arpanbiswas52/MOBO_AFI_Supplements).
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Submitted 29 August, 2021;
originally announced August 2021.
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Probing phonon softening in ferroelectrics by the scanning probe microwave spectroscopy
Authors:
Mykola Yelisieiev,
Petro Maksymovych,
Anna N. Morozovska
Abstract:
Microwave measurements have recently been successfully applied to measure ferroelectric materials on the nanoscale, including detection of polarization switching and ferroelectric domain walls. Here we discuss the question whether scanning probe microscopy (SPM) operating at microwave frequency can identify the changes associated with the soft phonon dynamics in a ferroic. The analytical expressio…
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Microwave measurements have recently been successfully applied to measure ferroelectric materials on the nanoscale, including detection of polarization switching and ferroelectric domain walls. Here we discuss the question whether scanning probe microscopy (SPM) operating at microwave frequency can identify the changes associated with the soft phonon dynamics in a ferroic. The analytical expressions for the electric potential, complex impedance and dielectric losses are derived and analyzed, since these physical quantities are linked to experimentally-measurable properties of the ferroic. As a ferroic we consider virtual or proper ferroelectric with an optic phonon mode that softens at a Curie point. We also consider a decay mechanism linked to the conductance of the ferroic, and thus manifesting itself as the dielectric loss in the material. Our key finding is that the influence of the soft phonon dispersion on the surface potential distribution, complex impedance and dielectric losses are evidently strong in the vicinity (10-30 K) of the Curie temperature. Furthermore, we quantified how the spatial distribution and frequency spectra of the complex impedance and the dielectric losses react on the dynamics of the soft phonons near the Curie point. These results set the stage for characterization of polar phase transitions with nanoscale microwave measurements, providing a complementary approach to well established electromechanical measurements for fundamental understanding of ferroelectric properties as well as their applications in telecommunication and computing.
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Submitted 6 November, 2021; v1 submitted 25 August, 2021;
originally announced August 2021.
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Effect of surface ionic screening on polarization reversal and phase diagrams in thin antiferroelectric films for information and energy storage
Authors:
Anna N. Morozovska,
Eugene A. Eliseev,
Arpan Biswas,
Nicholas V. Morozovsky,
Sergei V. Kalinin
Abstract:
The emergent behaviors in antiferroelectric thin films due to a coupling between surface electrochemistry and intrinsic polar instabilities are explored within the framework of the modified 2-4-6 Kittel-Landau-Ginzburg-Devonshire (KLGD) thermodynamic approach. Using phenomenological parameters of the KLGD potential for a bulk antiferroelectric (PbZrO3) and a Stephenson-Highland (SH) approach, we s…
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The emergent behaviors in antiferroelectric thin films due to a coupling between surface electrochemistry and intrinsic polar instabilities are explored within the framework of the modified 2-4-6 Kittel-Landau-Ginzburg-Devonshire (KLGD) thermodynamic approach. Using phenomenological parameters of the KLGD potential for a bulk antiferroelectric (PbZrO3) and a Stephenson-Highland (SH) approach, we study the role of surface ions with a charge density proportional to the relative partial oxygen pressure on the dipole states and their reversal mechanisms in the antiferroelectric thin films. The combined KLGD-SH approach allows to delineate the boundaries of antiferroelectric, ferroelectric-like antiferroionic and electret-like paraelectric states as a function of temperature, oxygen pressure, surface ions formation energy and concentration, and film thickness. This approach also allows the characterization of the polar and antipolar orderings dependence on the voltage applied to the antiferroelectric film, and the analysis of their static and dynamic hysteresis loops. The applications of the antiferroelectric films covered with surface ion layer for energy and information storage are explored.
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Submitted 25 June, 2021; v1 submitted 24 June, 2021;
originally announced June 2021.
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Flexo-Sensitive Polarization Vortices in Thin Ferroelectric Films
Authors:
Anna N. Morozovska,
Eugene A. Eliseev,
Sergei V. Kalinin,
Riccardo Hertel
Abstract:
We consider theoretically the influence of the flexoelectric coupling on the spatial distribution and temperature behavior of spontaneous polarization for several types of stable domain structure in thin ferroelectric films, such as stripe domains and vortices.Finite element modelling (FEM) for BaTiO3 films and analytical calculations within the Landau-Ginzburg-Devonshire approach reveals that an…
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We consider theoretically the influence of the flexoelectric coupling on the spatial distribution and temperature behavior of spontaneous polarization for several types of stable domain structure in thin ferroelectric films, such as stripe domains and vortices.Finite element modelling (FEM) for BaTiO3 films and analytical calculations within the Landau-Ginzburg-Devonshire approach reveals that an out-of-plane polarization component can be very sensitive to the flexoelectric coupling for periodic quasi-2D stripe domains and 3D vortex-antivortex structures.However, the influence is rather different for these structures. The flexoelectric coupling increases significantly the amplitude of a small out-of-plane polarization component in the stripe domains, and the "up" or "down" direction of the component is defined by the sign of the flexoelectric coefficients.Concerning the vortex-antivortex pairs, their antivortices with in-plane anti-circulation have smooth wide dipolar cores through the entire film, whose shape and other features are almost insensitive to the coupling.The vortices with in-plane vorticity have spike-like cores with an out-of-plane quadrupolar moment induced by the flexoelectric coupling. The cores are located near the film-dead layer interfaces.FEM results corroborated by analytical calculations prove that a change of the flexoelectric coefficient sign leads to a reorientation of the core axial polarization, making the flexo-sensitive 3D vortices similar to the recently introduced "flexons" in cylindrical nanoparticles.The relatively wide temperature range (from 200 to 400 K) of the flexo-sensitive vortices' existence gives us the hope that they can be observed experimentally in thin ferroelectric films by scanning probe and nonlinear optical microscopy methods.
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Submitted 14 May, 2021;
originally announced May 2021.
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Fundamental miniaturization limits for MOSFETs with a monolayer MoS$_2$ channel
Authors:
Maksym V. Strikha,
Mykola Yelisieiev,
Anna N. Morozovska
Abstract:
We propose a theoretical model for describing the operation of a transistor with a MoS2 monolayer channel, which allows to obtain an analytical approximation of the potential in the channel. This potential depends on the drain and gate voltages. On this basis we make estimates for the minimum channel lengths due to the fundamental restriction of quantum tunneling through the barrier. It is shown t…
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We propose a theoretical model for describing the operation of a transistor with a MoS2 monolayer channel, which allows to obtain an analytical approximation of the potential in the channel. This potential depends on the drain and gate voltages. On this basis we make estimates for the minimum channel lengths due to the fundamental restriction of quantum tunneling through the barrier. It is shown that the relatively large effective mass of electrons in the MoS2 monolayer allows to predict the creation of devices with channels of a significantly shorter (2.5 - 3 nm) length than in traditional silicon MOSFETs. These devices can be promising for the ultra-fast electronics of new generation.
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Submitted 11 May, 2021;
originally announced May 2021.
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Chiral Polarization Textures Induced by the Flexoelectric Effect in Ferroelectric Nanocylinders
Authors:
Anna N. Morozovska,
Riccardo Hertel,
Salia Cherifi-Hertel,
Victor Yu. Reshetnyak,
Eugene A. Eliseev,
Dean R. Evans
Abstract:
Polar chiral structures have recently attracted much interest within the scientific community, as they pave the way towards innovative device concepts similar to the developments achieved in nanomagnetism. Despite the growing interest, many fundamental questions related to the mechanisms controlling the appearance and stability of ferroelectric topological structures remain open. In this context,…
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Polar chiral structures have recently attracted much interest within the scientific community, as they pave the way towards innovative device concepts similar to the developments achieved in nanomagnetism. Despite the growing interest, many fundamental questions related to the mechanisms controlling the appearance and stability of ferroelectric topological structures remain open. In this context, ferroelectric nanoparticles provide a flexible playground for such investigations. Here, we present a theoretical study of ferroelectric polar textures in a cylindrical core-shell nanoparticle. The calculations reveal a chiral polarization structure containing two oppositely oriented diffuse axial domains located near the cylinder ends, separated by a region with a zero-axial polarization. We name this polarization configuration "flexon" to underline the flexoelectric nature of its axial polarization. Analytical calculations and numerical simulation results show that the flexon's chirality can be switched by reversing the sign of the flexoelectric coefficient. Furthermore, the anisotropy of the flexoelectric coupling is found to critically influence the polarization texture and domain morphology. The flexon rounded shape, combined with its distinct chiral properties and the localization nature near the surface, are reminiscent of Chiral Bobber structures in magnetism. In the azimuthal plane, the flexon displays the polarization state of a vortex with an axially polarized core region, i.e., a meron. The flexoelectric effect, which couples the electric polarization and elastic strain gradients, plays a determining role in the stabilization of these chiral states. We discuss similarities between this interaction and the recently predicted ferroelectric Dyzaloshinskii-Moriya interaction leading to chiral polarization states.
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Submitted 27 August, 2021; v1 submitted 1 April, 2021;
originally announced April 2021.
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Stress-Induced Phase Transitions in Nanoscale CuInP$_2$S$_6$
Authors:
Anna N. Morozovska,
Eugene A. Eliseev,
Sergei V. Kalinin,
Yulian M. Vysochanskii,
Petro Maksymovych
Abstract:
Using Landau-Ginsburg-Devonshire approach and available experimental results we reconstruct the thermodynamic potential of the layered ferroelectric CuInP$_2$S$_6$ (CIPS), which is expected to be applicable a wide range of temperatures and applied pressures. The analysis of temperature dependences of the dielectric permittivity and lattice constants for different applied pressures unexpectedly rev…
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Using Landau-Ginsburg-Devonshire approach and available experimental results we reconstruct the thermodynamic potential of the layered ferroelectric CuInP$_2$S$_6$ (CIPS), which is expected to be applicable a wide range of temperatures and applied pressures. The analysis of temperature dependences of the dielectric permittivity and lattice constants for different applied pressures unexpectedly reveals the critically important role of the nonlinear electrostriction in this material. With the nonlinear electrostriction included we calculated temperature and pressure phase diagrams and spontaneous polarization of bulk CIPS. Using the coefficients of the reconstructed four-well thermodynamic potential, we study the strain-induced phase transitions in thin epitaxial CIPS films, as well as the stress-induced phase transitions in CIPS nanoparticles, which shape varies from prolate needles to oblate disks. We reveal the strong influence of the mismatch strain, elastic stress and shape anisotropy on the polar properties and phase diagrams of nanoscale CIPS. Also, we derived analytical expressions, which allow the elastic control of the nanoscale CIPS polar properties. Hence obtained results can be of particular interest for the strain-engineering of nanoscale layered nanoferroelectrics.
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Submitted 1 April, 2021; v1 submitted 26 March, 2021;
originally announced March 2021.
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Map** causal patterns in crystalline solids
Authors:
Chris Nelson,
Anna N. Morozovska,
Maxim A. Ziatdinov,
Eugene A. Eliseev,
Xiaohang Zhang,
Ichiro Takeuchi,
Sergei V. Kalinin
Abstract:
The evolution of the atomic structures of the combinatorial library of Sm-substituted thin film BiFeO3 along the phase transition boundary from the ferroelectric rhombohedral phase to the non-ferroelectric orthorhombic phase is explored using scanning transmission electron microscopy (STEM). Localized properties including polarization, lattice parameter, and chemical composition are parameterized…
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The evolution of the atomic structures of the combinatorial library of Sm-substituted thin film BiFeO3 along the phase transition boundary from the ferroelectric rhombohedral phase to the non-ferroelectric orthorhombic phase is explored using scanning transmission electron microscopy (STEM). Localized properties including polarization, lattice parameter, and chemical composition are parameterized from atomic-scale imaging and their causal relationships are reconstructed using a linear non-Gaussian acyclic model (LiNGAM). This approach is further extended toward exploring the spatial variability of the causal coupling using the sliding window transform method, which revealed that new causal relationships emerged both at the expected locations, such as domain walls and interfaces, but also at additional regions forming clusters in the vicinity of the walls or spatially distributed features. While the exact physical origins of these relationships are unclear, they likely represent nanophase separated regions in the morphotropic phase boundaries. Overall, we pose that an in-depth understanding of complex disordered materials away from thermodynamic equilibrium necessitates understanding not only of the generative processes that can lead to observed microscopic states, but also the causal links between multiple interacting subsystems.
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Submitted 2 March, 2021;
originally announced March 2021.
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A Combined Theoretical and Experimental Study of the Phase Coexistence and Morphotropic Boundaries in Ferroelectric-Antiferroelectric-Antiferrodistortive Multiferroics
Authors:
Anna N. Morozovska,
Dmitry V. Karpinsky,
Denis O. Alikin,
Alexander Abramov,
Eugene A. Eliseev,
Maya D. Glinchuk,
Andrii D. Yaremkevich,
Olena M. Fesenko,
Tamara V. Tsebrienko,
A. Pakalniškis,
A. Kareiva,
Maxim V. Silibin,
Vitali V. Sidski,
Sergei V. Kalinin,
Andrei L Kholkin
Abstract:
The physical nature of the ferroelectric (FE), ferrielectric (FEI) and antiferroelectric (AFE) phases, their coexistence and spatial distributions underpin the functionality of antiferrodistortive (AFD) multiferroics in the vicinity of morphotropic phase transitions. Using Landau-Ginzburg-Devonshire (LGD) phenomenology and a semi-microscopic four sublattice model (FSM), we explore the behavior of…
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The physical nature of the ferroelectric (FE), ferrielectric (FEI) and antiferroelectric (AFE) phases, their coexistence and spatial distributions underpin the functionality of antiferrodistortive (AFD) multiferroics in the vicinity of morphotropic phase transitions. Using Landau-Ginzburg-Devonshire (LGD) phenomenology and a semi-microscopic four sublattice model (FSM), we explore the behavior of different AFE, FEI and FE long-range orderings and their coexistence at the morphotropic phase boundaries in FE-AFE-AFD multiferroics. These theoretical predictions are compared with the experimental observations for dense Bi1-yRyFeO3 ceramics, where R is Sm or La atoms with the fraction 0 < y< 0.25, as confirmed by the X-ray diffraction (XRD) and Piezoresponse Force Microscopy (PFM). These complementary measurements were used to study the macroscopic and nanoscopic transformation of the crystal structure with the do**. The comparison of the measured and calculated AFE/FE phase fractions demonstrate that the LGD-FSM approach well describes the experimental results obtained by XRD and PFM for Bi1-yRyFeO3. Hence, this combined theoretical and experimental approach provides further insight into the origin of the morphotropic boundaries and coexisting FE and AFE states in model rare-earth doped multiferroics.
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Submitted 14 February, 2021; v1 submitted 30 December, 2020;
originally announced December 2020.
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Fundamental constraints for the length of the MOSFET conduction channel based on the realistic form of the potential barrier
Authors:
Maksym V. Strikha,
Anatolii I. Kurchak,
Anna N. Morozovska
Abstract:
The work estimates the minimum channel length of the MOSFET transistor, which is the bacis device of modern electronics. Taking into account the real shape of potential barrier in the channel shows that the electron tunnels through a region significantly shorter than the physical length of the channel in the presence of drain voltage, and so the available estimate of the minimum quantum constraint…
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The work estimates the minimum channel length of the MOSFET transistor, which is the bacis device of modern electronics. Taking into account the real shape of potential barrier in the channel shows that the electron tunnels through a region significantly shorter than the physical length of the channel in the presence of drain voltage, and so the available estimate of the minimum quantum constraint channel length in silicon MOSFET, 1.2 nm, is significantly underestimated. The fact makes it clear why after reaching 5 nm working lengths of the channel it was impossible to reach the long-declared values of 3 nm under maintaining the proper level of functionality of the transistor. The estimates made in this work confirm that the fundamental scaling limits of silicon MOSFETs have almost been reached.
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Submitted 21 December, 2020;
originally announced December 2020.
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Origin of ferroelectricity and multiferroicity in binary oxide thin films
Authors:
Maya Glinchuk,
Anna Morozovska,
Lesya Yurchenko
Abstract:
The observation of ferroelectric, ferromagnetic and ferroelastic phases in thin films of binary oxides attract the broad interest of scientists and engineers. However, the theoretical consideration of observed behaviour physical nature was performed mainly for HfO2 thin films from the first principles, and in the framework of Landau-Ginzburg-Devonshire (LGD) phenomenological approach with a specia…
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The observation of ferroelectric, ferromagnetic and ferroelastic phases in thin films of binary oxides attract the broad interest of scientists and engineers. However, the theoretical consideration of observed behaviour physical nature was performed mainly for HfO2 thin films from the first principles, and in the framework of Landau-Ginzburg-Devonshire (LGD) phenomenological approach with a special attention to the role of oxygen vacancies in both cases. Allowing for generality of the LGD theory we applied it to the group of binary oxides in this work. The calculations have been performed in the assumption that oxygen vacancies, as elastic dipoles, can be partially transformed into electric dipoles due to the defect site-induced and/or surface-induced inversion symmetry breaking (via e.g. piezoelectric effect), and can "migrate" entire the depth of an ultra-thin film. We calculated the dependence of the film polarization on the applied voltage for room temperature and different film thickness. Since the many films of binary oxide are ferroelectric and ferromagnetic due to the same oxygen vacancies, they can be multiferroics. Performed calculations have shown that thin films of binary oxides can be considered as a new wide class of multiferroics with broad spectra of physical properties useful for application in nanoelectronics and nanotechnology. The properties can be controlled by the choice of oxygen vacancies concentration, film thickness and special technological treatment, such as annealing.
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Submitted 5 December, 2020;
originally announced December 2020.
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Flexo-Elastic Control Factors of Domain Morphology in Core-Shell Ferroelectric Nanoparticles: Soft and Rigid Shells
Authors:
Eugene A. Eliseev,
Anna N. Morozovska,
Riccardo Hertel,
Hanna V. Shevliakova,
Yevhen M. Fomichov,
Victor Yu. Reshetnyak,
Dean R. Evans
Abstract:
Within the framework of the Landau-Ginzburg-Devonshire approach we explore the impact of elastic anisotropy, electrostriction, flexoelectric couplings, and mismatch strain on the domain structure morphology in ferroelectric core-shell nanoparticles of spherical shape. We perform finite element modelling (FEM) for multiaxial ferroelectric nanoparticle cores covered with an elastically-isotropic sof…
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Within the framework of the Landau-Ginzburg-Devonshire approach we explore the impact of elastic anisotropy, electrostriction, flexoelectric couplings, and mismatch strain on the domain structure morphology in ferroelectric core-shell nanoparticles of spherical shape. We perform finite element modelling (FEM) for multiaxial ferroelectric nanoparticle cores covered with an elastically-isotropic soft or elastically-anisotropic rigid paraelectric shell, with and without mismatch strains. In the case of a core covered with a soft shell, the FEM results show that at room temperature a single polarization vortex with a dipolar kernel can be stable if the electrostriction coupling is weak. With increasing anisotropic electrostriction coupling, the vortex disappears and is replaced by complex flux-closure structures, which are formed in the equatorial plane and transform into an elongated vortex with a central 180-degree domain wall near the core poles. This complex domain morphology develops in the core due to the anisotropic electrostriction, and the flexoelectric coupling leads to an additional curvature and twist of the polarization isosurfaces. In contrast to this, FEM performed for a core covered with a rigid shell shows that, at room temperature, the anisotropic elastic properties of the shell can stabilize vortex-like structures with three flux-closure domains, which gradually cross in the equatorial plane of the core and transform into 120-degree domains near the core poles. The flexoelectric coupling leads to a noticeable curling of the flux-closure domain walls. A mismatch strain compensates the curling of the flux-closure domains in the core confined by the elastically-anisotropic rigid shell. Our analysis reveals different types of topological defects, namely Bloch point structures (BPS) and Ising lines, that form in a ferroelectric core covered with a soft or rigid shell.
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Submitted 1 December, 2020;
originally announced December 2020.
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Nontrivial magnetic field related phenomena in the single-layer graphene on ferroelectric substrate
Authors:
Maksym V. Strikha,
Anna N. Morozovska,
Zhanna G. Zemska
Abstract:
The review is focused on our recent predictions of nontrivial physical phenomena taking place in the nanostructure single-layer grapheme on ferroelectric substrate, which are related with magnetic field. In particular we predicted that 180-degree domain walls in a strained ferroelectric film can induce p-n junctions in a graphene channel and lead to the unusual temperature and gate voltage depende…
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The review is focused on our recent predictions of nontrivial physical phenomena taking place in the nanostructure single-layer grapheme on ferroelectric substrate, which are related with magnetic field. In particular we predicted that 180-degree domain walls in a strained ferroelectric film can induce p-n junctions in a graphene channel and lead to the unusual temperature and gate voltage dependences of the perpendicular modes ν of the integer quantum Hall effect. The non-integer numbers and their irregular sequence principally differ from the conventional sequence ν= 3/2, 5/3. The unusual v-numbers originate from significantly different numbers of the edge modes, ν1 and ν2, corresponding to different concentration of carriers in the left (n1) and right (n2) ferroelectric domains of p-n junction boundary. The difference between n1 and n2 disappears with the vanishing of the film spontaneous polarization in a paraelectric phase, which can be varied in a wide temperature range by an appropriate choice of misfit strain originated from the film-substrate lattice mismatch. Next we studied the electric conductivity of the system ferromagnetic dielectric - graphene channel - ferroelectric substrate. The magnetic dielectric locally transforms the band spectrum of graphene by inducing an energy gap in it and making it spin-asymmetric with respect to the free electrons. It was demonstrated, that if the Fermi level in the graphene channel belongs to energy intervals, where the graphene band spectrum, modified by EuO, becomes sharply spin-asymmetric, such a device can be an ideal non-volatile spin filter. The practical application of the system under consideration would be restricted by a Curie temperature of a ferromagnet. Controlling of the Fermi level (e.g. by temperature that changes ferroelectric polarization) can convert a spin filter to a spin valve.
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Submitted 27 November, 2020;
originally announced November 2020.
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Correlation between corrugation-induced flexoelectric polarization and conductivity of low-dimensional transition metal dichalcogenides
Authors:
Anna N. Morozovska,
Eugene A. Eliseev,
Hanna V. Shevliakova,
Yaroslava Yu. Lopatina,
Galina I. Dovbeshko,
Maya D. Glinchuk,
Yunseok Kim,
Sergei V. Kalinin
Abstract:
Tunability of polar and semiconducting properties of low-dimensional transition metal dichalcogenides (TMDs) have propelled them to the forefront of fundamental and applied physical research. These materials can vary from non-polar to ferroelectric, and from direct-band semiconductor to metallic. However, in addition to classical controls such as composition, do**, and field effect in TMDs the a…
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Tunability of polar and semiconducting properties of low-dimensional transition metal dichalcogenides (TMDs) have propelled them to the forefront of fundamental and applied physical research. These materials can vary from non-polar to ferroelectric, and from direct-band semiconductor to metallic. However, in addition to classical controls such as composition, do**, and field effect in TMDs the additional degrees of freedom emerge due to the curvature-induced electron redistribution and associated changes in electronic properties. Here we numerically explore the elastic and electric fields, flexoelectric polarization and free charge density for a TMD nanoflake placed on a rough substrate with a sinusoidal profile of the corrugation using finite element modelling. Numerical results for different flake thickness and corrugation depth yield insight into the flexoelectric nature of the out-of-plane electric polarization and establish the unambiguous correlation between the polarization and static conductivity modulation caused by inhomogeneous elastic strains coupled with deformation potential and strain gradients, which evolve in TMD nanoflake due to the adhesion between the flake surface and corrugated substrate. We revealed a pronounced maximum at the thickness dependences of the electron and hole conductivity of MoS2 and MoTe2 nanoflakes placed on a metallic substrate, which opens the way for their geometry optimization towards significant improvement their polar and electronic properties, necessary for their advanced applications in nanoelectronics and memory devices.Specifically, obtained results can be useful for elaboration of nanoscale straintronic devices based on the bended MoS2, MoTe2 and MoSTe nanoflakes, such as diodes and bipolar transistors with a bending-controllable sharpness of p-n junctions.
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Submitted 29 November, 2020; v1 submitted 18 November, 2020;
originally announced November 2020.
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Control of domain states in rhombohedral PZT films via misfit strains and surface charges
Authors:
I. S. Vorotiahin,
A. N. Morozovska,
E. A. Eliseev,
Y. A. Genenko
Abstract:
Using the Landau-Ginzburg-Devonshire theory, an influence of the misfit strain and surface screening charges, as well as the role of the flexoelectric effect, have been studied by numerical modelling in the case of a rhombohedral lead zirconate-titanate ferroelectric/ferroelastic thin film with an anisotropic misfit produced by a substrate. It was established that the magnitude and sign of the mis…
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Using the Landau-Ginzburg-Devonshire theory, an influence of the misfit strain and surface screening charges, as well as the role of the flexoelectric effect, have been studied by numerical modelling in the case of a rhombohedral lead zirconate-titanate ferroelectric/ferroelastic thin film with an anisotropic misfit produced by a substrate. It was established that the magnitude and sign of the misfit strain influence the domain structure and predominant directions of the polarization vector, providing misfit-dependent phases with different favourable polarization components. Whilst strong enough compressive misfit strains favour a phase with an orthorhombic-like polarization directions, strong tensile misfits only yield in-plane polarization components. The strength of surface screening is seen to condition the existence of closure domain structures and, by increasing, supports the single-domain state depending on the value of the misfit strain. The flexoelectric effect exhibits a weak influence on the phase diagram of multi-domain states when compared with the phase diagram of single-domain states. Its effect, however, becomes significant in the case of skyrmion topological states, which spontaneously form near the film surface when compressive misfit strains are applied. Cooperative influence of the misfit strain, surface screening charges and temperature can set a thin rhombohedral ferroelectric film into a number of different polar and structural states, whereby the role of the flexoelectric effect is pronounced for topologically nontrivial structures.
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Submitted 10 April, 2021; v1 submitted 14 November, 2020;
originally announced November 2020.