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Fermiology and transport properties of the proposed topological crystalline insulator SrAg4Sb2
Authors:
J Green,
Eve Emmanouilidou,
Harry W. T. Morgan,
William T. Laderer,
Chaowei Hu,
Jonathan Loera,
Anastassia N. Alexandrova,
Ni Ni
Abstract:
Compared to time-reversal symmetry-protected Z2 topological insulators and Dirac/Weyl semimetals, there are significantly fewer candidates for topological crystalline insulators. SrAg4Sb2 is predicted to exhibit topological crystalline insulator behavior when considering spin-orbit coupling. In this study, we systematically investigate single crystals of SrAg4Sb2 using electrical transport and mag…
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Compared to time-reversal symmetry-protected Z2 topological insulators and Dirac/Weyl semimetals, there are significantly fewer candidates for topological crystalline insulators. SrAg4Sb2 is predicted to exhibit topological crystalline insulator behavior when considering spin-orbit coupling. In this study, we systematically investigate single crystals of SrAg4Sb2 using electrical transport and magnetic torque measurements, along with first-principles calculations. Our transport data reveals its compensated semimetal nature with a magnetoresistance up to around 700% at 2 K and 9 T. Analysis of de Haas-van Alphen oscillations uncovers a Fermi surface consisting of three distinct Fermi pockets with light effective masses. Comparison between the three-dimensional fermiology obtained from our oscillation data and the first-principles calculations demonstrates excellent agreement. This confirms the accuracy of the calculations, which indicate a band inversion centered at the Γ point and identify the existence of nontrivial tube and needle hole Fermi pockets at Γ, alongside one trivial diamond electron pocket at the T point in the Brillouin zone. Furthermore, symmetry and topology analysis results in two potential sets of topological invariants, suggesting the emergence of two-dimensional gapless Dirac surface states either on the ab planes or on both the ab planes and mirror planes, protected by crystal symmetries. Therefore, SrAg4Sb2 emerges as a promising candidate topological crystalline insulator.
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Submitted 22 April, 2024;
originally announced April 2024.
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Interferometric Single-Shot Parity Measurement in an InAs-Al Hybrid Device
Authors:
Morteza Aghaee,
Alejandro Alcaraz Ramirez,
Zulfi Alam,
Rizwan Ali,
Mariusz Andrzejczuk,
Andrey Antipov,
Mikhail Astafev,
Amin Barzegar,
Bela Bauer,
Jonathan Becker,
Umesh Kumar Bhaskar,
Alex Bocharov,
Srini Boddapati,
David Bohn,
Jouri Bommer,
Leo Bourdet,
Arnaud Bousquet,
Samuel Boutin,
Lucas Casparis,
Benjamin James Chapman,
Sohail Chatoor,
Anna Wulff Christensen,
Cassandra Chua,
Patrick Codd,
William Cole
, et al. (137 additional authors not shown)
Abstract:
The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostruct…
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The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostructures with a gate-defined nanowire. The interferometer is formed by tunnel-coupling the proximitized nanowire to quantum dots. The nanowire causes a state-dependent shift of these quantum dots' quantum capacitance of up to 1 fF. Our quantum capacitance measurements show flux h/2e-periodic bimodality with a signal-to-noise ratio of 1 in 3.7 $μ$s at optimal flux values. From the time traces of the quantum capacitance measurements, we extract a dwell time in the two associated states that is longer than 1 ms at in-plane magnetic fields of approximately 2 T. These results are consistent with a measurement of the fermion parity encoded in a pair of Majorana zero modes that are separated by approximately 3 $μ$m and subjected to a low rate of poisoning by non-equilibrium quasiparticles. The large capacitance shift and long poisoning time enable a parity measurement error probability of 1%.
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Submitted 2 April, 2024; v1 submitted 17 January, 2024;
originally announced January 2024.
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A ReaxFF molecular dynamics study of hydrogen diffusion in ruthenium -- the role of grain boundaries
Authors:
Chidozie Onwudinanti,
Mike Pols,
Geert Brocks,
Vianney Koelman,
Adri C. T. van Duin,
Thomas Morgan,
Shuxia Tao
Abstract:
Ruthenium thin films can serve as protective caps for multi-layer extreme ultraviolet mirrors exposed to atomic hydrogen. Hydrogen permeation through ruthenium is problematic as it leads to blisters on the mirrors. H has been shown to exhibit low solubility in bulk Ru, and rapidly diffuses in and out of Ru. Therefore, the underlying mechanisms of the blistering effect remains unknown. This work ma…
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Ruthenium thin films can serve as protective caps for multi-layer extreme ultraviolet mirrors exposed to atomic hydrogen. Hydrogen permeation through ruthenium is problematic as it leads to blisters on the mirrors. H has been shown to exhibit low solubility in bulk Ru, and rapidly diffuses in and out of Ru. Therefore, the underlying mechanisms of the blistering effect remains unknown. This work makes use of reactive molecular dynamics simulations to study the influence of imperfections in a Ru film on the behaviour of H. For the Ru/H system, a ReaxFF force field was parametrised which reproduces structures and energies obtained from quantum-mechanical calculations. Molecular dynamics simulations have been performed with the newly-developed force field, to study the effect of tilt and twist grain boundaries on the overall diffusion behaviour of H in Ru. Our simulations show the tilt and twist grain boundaries provide energetically favourable sites for hydrogen atoms and act as sinks and highways for H. They therefore block H transport across their planes, and favour diffusion along their planes. This results in the accumulation of hydrogen at the grain boundaries. The strong effect of the grain boundaries on the hydrogen diffusion suggests tailoring the morphology of ruthenium thin films as a means to curb the rate of hydrogen permeation.
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Submitted 1 October, 2021;
originally announced October 2021.
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Adiabatic potentials using multiple radio frequencies
Authors:
T. Morgan,
Th. Busch,
T. Fernholz
Abstract:
Adiabatic radio frequency (RF) potentials are powerful tools for creating advanced trap** geometries for ultra-cold atoms. While the basic theory of RF trap** is well understood, studies of more complicated setups involving multiple resonant frequencies in the limit where their effects cannot be treated independently are rare. Here we present an approach based on Floquet theory and show that i…
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Adiabatic radio frequency (RF) potentials are powerful tools for creating advanced trap** geometries for ultra-cold atoms. While the basic theory of RF trap** is well understood, studies of more complicated setups involving multiple resonant frequencies in the limit where their effects cannot be treated independently are rare. Here we present an approach based on Floquet theory and show that it offers significant corrections to existing models when two RF frequencies are near degenerate. Furthermore it has no restrictions on the dimension, the number of frequencies or the orientation of the RF fields. We show that the added degrees of freedom can, for example, be used to create a potential that allows for easy creation of ring vortex solitons.
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Submitted 11 May, 2014;
originally announced May 2014.
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Stability and Dynamics of Cross Solitons in Harmonically Confined Bose-Einstein Condensates
Authors:
T. Morgan,
Th. Busch
Abstract:
We examine the stability and dynamics of a family of crossed dark solitons in a harmonically confined Bose-Einstein condensate in two dimensions. Working in a regime where the fundamental snake instability is suppressed, we show the existence of an instability which leads to an interesting collapse and revival of the initial state for the fundamental case of two crossed solitons. The instability o…
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We examine the stability and dynamics of a family of crossed dark solitons in a harmonically confined Bose-Einstein condensate in two dimensions. Working in a regime where the fundamental snake instability is suppressed, we show the existence of an instability which leads to an interesting collapse and revival of the initial state for the fundamental case of two crossed solitons. The instability originates from the singular point where the solitons cross, and we characterise it by examining the Bogoliubov spectrum. Finally, we extend the treatment to systems of higher symmetry.
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Submitted 2 February, 2014; v1 submitted 30 September, 2013;
originally announced September 2013.
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Coherent transport by adiabatic passage on atom chips
Authors:
T. Morgan,
L. J. O'Riordan,
N. Crowley,
B. O'Sullivan,
Th. Busch
Abstract:
Adiabatic techniques offer some of the most promising tools to achieve high-fidelity control of the centre-of-mass degree of freedom of single atoms. As their main requirement is to follow an eigenstate of the system, constraints on timing and field strength stability are usually low, especially for trapped systems. In this paper we present a detailed example of a technique to adiabatically transp…
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Adiabatic techniques offer some of the most promising tools to achieve high-fidelity control of the centre-of-mass degree of freedom of single atoms. As their main requirement is to follow an eigenstate of the system, constraints on timing and field strength stability are usually low, especially for trapped systems. In this paper we present a detailed example of a technique to adiabatically transport a single atom between different waveguides on an atom chip. To ensure that all conditions are fulfilled, we carry out fully three dimensional simulations of the system, using experimentally realistic parameters. We also detail our method for simulating the system in very reasonable timescales on a consumer desktop machine by leveraging the power of GPU computing.
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Submitted 20 December, 2013; v1 submitted 10 September, 2013;
originally announced September 2013.
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Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction
Authors:
Zhaoquan Zeng,
Timothy A. Morgan,
Dongsheng Fan,
Chen Li,
Yusuke Hirono,
Xian Hu,
Yanfei Zhao,
Joon Sue Lee,
Zhiming M. Wang,
Jian Wang,
Shuiqing Yu,
Michael E. Hawkridge,
Mourad Benamara,
Gregory J. Salamo
Abstract:
High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is…
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High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.
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Submitted 11 March, 2013; v1 submitted 2 January, 2013;
originally announced January 2013.
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Coherent adiabatic transport of atoms in radio-frequency traps
Authors:
T. Morgan,
B. O'Sullivan,
Th. Busch
Abstract:
Coherent transport by adiabatic passage has recently been suggested as a high-fidelity technique to engineer the centre-of-mass state of single atoms in inhomogenous environments. While the basic theory behind this process is well understood, several conceptual challenges for its experimental observation have still to be addressed. One of these is the difficulty that currently available optical or…
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Coherent transport by adiabatic passage has recently been suggested as a high-fidelity technique to engineer the centre-of-mass state of single atoms in inhomogenous environments. While the basic theory behind this process is well understood, several conceptual challenges for its experimental observation have still to be addressed. One of these is the difficulty that currently available optical or magnetic micro-trap systems have in adjusting the tunneling rate time-dependently while kee** resonance between the asymptotic trap** states at all times. Here we suggest that both requirements can be fulfilled to a very high degree in an experimentally realistic setup based on radio frequency traps on atom chips. We show that operations with close to 100% fidelity can be achieved and that these systems also allow significant improvements for performing adiabatic passage with interacting atomic clouds.
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Submitted 6 March, 2012; v1 submitted 11 March, 2011;
originally announced March 2011.
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Using adiabatic coupling techniques in atom-chip waveguide structures
Authors:
B. O'Sullivan,
P. Morrissey,
T. Morgan,
Th. Busch
Abstract:
Adiabatic techniques are well known tools in multi-level electron systems to transfer population between different states with high fidelity. Recently it has been realised that these ideas can also be used in ultra-cold atom systems to achieve coherent manipulation of the atomic centre-of-mass states. Here we present an investigation into a realistic setup using three atomic waveguides created o…
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Adiabatic techniques are well known tools in multi-level electron systems to transfer population between different states with high fidelity. Recently it has been realised that these ideas can also be used in ultra-cold atom systems to achieve coherent manipulation of the atomic centre-of-mass states. Here we present an investigation into a realistic setup using three atomic waveguides created on top of an atom chip and show that such systems hold large potential for the observation of adiabatic phenomena in experiments.
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Submitted 8 January, 2010;
originally announced January 2010.
