Showing 1–50 of 98 results for author: Morello, A

Creation and manipulation of Schrödinger cat states of a nuclear spin qudit in silicon

Authors: Xi Yu, Benjamin Wilhelm, Danielle Holmes, Arjen Vaartjes, Daniel Schwienbacher, Martin Nurizzo, Anders Kringhøj, Mark R. van Blankenstein, Alexander M. Jakob, Pragati Gupta, Fay E. Hudson, Kohei M. Itoh, Riley J. Murray, Robin Blume-Kohout, Thaddeus D. Ladd, Andrew S. Dzurak, Barry C. Sanders, David N. Jamieson, Andrea Morello

Abstract: High-dimensional quantum systems are a valuable resource for quantum information processing. They can be used to encode error-correctable logical qubits, for instance in continuous-variable states of oscillators such as microwave cavities or the motional modes of trapped ions. Powerful encodings include 'Schrödinger cat' states, superpositions of widely displaced coherent states, which also embody… ▽ More High-dimensional quantum systems are a valuable resource for quantum information processing. They can be used to encode error-correctable logical qubits, for instance in continuous-variable states of oscillators such as microwave cavities or the motional modes of trapped ions. Powerful encodings include 'Schrödinger cat' states, superpositions of widely displaced coherent states, which also embody the challenge of quantum effects at the large scale. Alternatively, recent proposals suggest encoding logical qubits in high-spin atomic nuclei, which can host hardware-efficient versions of continuous-variable codes on a finite-dimensional system. Here we demonstrate the creation and manipulation of Schrödinger cat states using the spin-7/2 nucleus of a single antimony ($^{123}$Sb) atom, embedded and operated within a silicon nanoelectronic device. We use a coherent multi-frequency control scheme to produce spin rotations that preserve the SU(2) symmetry of the qudit, and constitute logical Pauli operations for logical qubits encoded in the Schrödinger cat states. The Wigner function of the cat states exhibits parity oscillations with a contrast up to 0.982(5), and state fidelities up to 0.913(2). These results demonstrate high-fidelity preparation of nonclassical resource states and logical control in a single atomic-scale object, opening up applications in quantum information processing and quantum error correction within a scalable, manufacturable semiconductor platform. △ Less

Submitted 24 May, 2024; originally announced May 2024.

Comments: 40 pages including main and supplementary information

Coherent all-optical control of a solid-state spin via a double $Λ$-system

Authors: C. Adambukulam, J. A. Scott, S. Q. Lim, I. Aharonovich, A. Morello, A. Laucht

Abstract: All-optical control enables fast quantum operations on color center spins that are typically realized via a single Raman transition in a $Λ$-system. Here, we simultaneously drive both Raman transitions in a double $Λ$-system to control the spin of a germanium vacancy (GeV) in diamond. In doing so, we achieve fast operations, observe the quantum interference between the two Raman transitions and pr… ▽ More All-optical control enables fast quantum operations on color center spins that are typically realized via a single Raman transition in a $Λ$-system. Here, we simultaneously drive both Raman transitions in a double $Λ$-system to control the spin of a germanium vacancy (GeV) in diamond. In doing so, we achieve fast operations, observe the quantum interference between the two Raman transitions and probe the GeV coherence ($T_2^*=224\pm14$ ns, $T_2^{\rm H}=11.9\pm0.3$ $μ$s). Importantly, control via a double $Λ$-system is applicable to other color centers and particularly, the group-IV defects in diamond. △ Less

Submitted 4 February, 2024; v1 submitted 31 January, 2024; originally announced February 2024.

Comments: 6 pages, 4 figures

Tomography of entangling two-qubit logic operations in exchange-coupled donor electron spin qubits

Authors: Holly G. Stemp, Serwan Asaad, Mark R. van Blankenstein, Arjen Vaartjes, Mark A. I. Johnson, Mateusz T. Mądzik, Amber J. A. Heskes, Hannes R. Firgau, Rocky Y. Su, Chih Hwan Yang, Arne Laucht, Corey I. Ostrove, Kenneth M. Rudinger, Kevin Young, Robin Blume-Kohout, Fay E. Hudson, Andrew S. Dzurak, Kohei M. Itoh, Alexander M. Jakob, Brett C. Johnson, David N. Jamieson, Andrea Morello

Abstract: Scalable quantum processors require high-fidelity universal quantum logic operations in a manufacturable physical platform. Donors in silicon provide atomic size, excellent quantum coherence and compatibility with standard semiconductor processing, but no entanglement between donor-bound electron spins has been demonstrated to date. Here we present the experimental demonstration and tomography of… ▽ More Scalable quantum processors require high-fidelity universal quantum logic operations in a manufacturable physical platform. Donors in silicon provide atomic size, excellent quantum coherence and compatibility with standard semiconductor processing, but no entanglement between donor-bound electron spins has been demonstrated to date. Here we present the experimental demonstration and tomography of universal 1- and 2-qubit gates in a system of two weakly exchange-coupled electrons, bound to single phosphorus donors introduced in silicon by ion implantation. We surprisingly observe that the exchange interaction has no effect on the qubit coherence. We quantify the fidelity of the quantum operations using gate set tomography (GST), and we use the universal gate set to create entangled Bell states of the electrons spins, with fidelity ~ 93%, and concurrence 0.91 +/- 0.08. These results form the necessary basis for scaling up donor-based quantum computers. △ Less

Submitted 2 March, 2024; v1 submitted 27 September, 2023; originally announced September 2023.

Scalable Atomic Arrays for Spin-Based Quantum Computers in Silicon

Authors: Alexander M. Jakob, Simon G. Robson, Hannes R. Firgau, Vincent Mourik, Vivien Schmitt, Danielle Holmes, Matthias Posselt, Edwin L. H. Mayes, Daniel Spemann, Andrea Morello, David N. Jamieson

Abstract: Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here we demonstrate and integrate multiple strategies to manufac… ▽ More Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here we demonstrate and integrate multiple strategies to manufacture scale-up donor-based quantum computers. We use $^{31}$PF$_{2}$ molecule implants to triple the placement certainty compared to $^{31}$P ions, while attaining 99.99$\,$% confidence in detecting the implant. Similar confidence is retained by implanting heavier atoms such as $^{123}$Sb and $^{209}$Bi, which represent high-dimensional qudits for quantum information processing, while Sb$_2$ molecules enable deterministic formation of closely-spaced qudits. We demonstrate the deterministic formation of regular arrays of donor atoms with 300$\,$nm spacing, using step-and-repeat implantation through a nano aperture. These methods cover the full gamut of technological requirements for the construction of donor-based quantum computers in silicon. △ Less

Submitted 18 September, 2023; originally announced September 2023.

Comments: 11 pages, 6 figures, 2 tables

Hyperfine spectroscopy and fast, all-optical arbitrary state initialization and readout of a single, ten-level ${}^{73}$Ge vacancy nuclear spin qudit in diamond

Authors: C. Adambukulam, B. C. Johnson, A. Morello, A. Laucht

Abstract: A high-spin nucleus coupled to a color center can act as a long-lived memory qudit in a spin-photon interface. The germanium vacancy (GeV) in diamond has attracted recent attention due to its excellent spectral properties and provides access to the ten-dimensional Hilbert space of the $I=9/2$ ${}^{73}$Ge nucleus. Here, we observe the ${}^{73}$GeV hyperfine structure, perform nuclear spin readout,… ▽ More A high-spin nucleus coupled to a color center can act as a long-lived memory qudit in a spin-photon interface. The germanium vacancy (GeV) in diamond has attracted recent attention due to its excellent spectral properties and provides access to the ten-dimensional Hilbert space of the $I=9/2$ ${}^{73}$Ge nucleus. Here, we observe the ${}^{73}$GeV hyperfine structure, perform nuclear spin readout, and optically initialize the ${}^{73}$Ge spin into any eigenstate on a $μ$s timescale and with a fidelity of up to $\sim 84\%$. Our results establish the ${}^{73}$GeV as an optically addressable high-spin quantum platform for a high-efficiency spin-photon interface as well as for foundational quantum physics and metrology. △ Less

Submitted 13 February, 2024; v1 submitted 8 September, 2023; originally announced September 2023.

Comments: 8 pages, 4 figures

Improved placement precision of implanted donor spin qubits in silicon using molecule ions

Authors: Danielle Holmes, Benjamin Wilhelm, Alexander M. Jakob, Xi Yu, Fay E. Hudson, Kohei M. Itoh, Andrew S. Dzurak, David N. Jamieson, Andrea Morello

Abstract: Donor spins in silicon-28 ($^{28}$Si) are among the most performant qubits in the solid state, offering record coherence times and gate fidelities above 99%. Donor spin qubits can be fabricated using the semiconductor-industry compatible method of deterministic ion implantation. Here we show that the precision of this fabrication method can be boosted by implanting molecule ions instead of single… ▽ More Donor spins in silicon-28 ($^{28}$Si) are among the most performant qubits in the solid state, offering record coherence times and gate fidelities above 99%. Donor spin qubits can be fabricated using the semiconductor-industry compatible method of deterministic ion implantation. Here we show that the precision of this fabrication method can be boosted by implanting molecule ions instead of single atoms. The bystander ions, co-implanted with the dopant of interest, carry additional kinetic energy and thus increase the detection confidence of deterministic donor implantation employing single ion detectors to signal the induced electron-hole pairs. This allows the placement uncertainty of donor qubits to be minimised without compromising on detection confidence. We investigate the suitability of phosphorus difluoride (PF$_2^+$) molecule ions to produce high quality P donor qubits. Since $^{19}$F nuclei have a spin of $I = 1/2$, it is imperative to ensure that they do not hyperfine couple to P donor electrons as they would cause decoherence by adding magnetic noise. Using secondary ion mass spectrometry, we confirm that F diffuses away from the active region of qubit devices while the P donors remain close to their original location during a donor activation anneal. PF$_2$-implanted qubit devices were then fabricated and electron spin resonance (ESR) measurements were performed on the P donor electron. A pure dephasing time of $T_2^* = 20.5 \pm 0.5$ $μ$s and a coherence time of $T_2^{Hahn} = 424 \pm 5$ $μ$s were extracted for the P donor electron-values comparable to those found in previous P-implanted qubit devices. Closer investigation of the P donor ESR spectrum revealed that no $^{19}$F nuclear spins were found in the vicinity of the P donor. Molecule ions therefore show great promise for producing high-precision deterministically-implanted arrays of long-lived donor spin qubits. △ Less

Submitted 8 August, 2023; originally announced August 2023.

Comments: 8 pages, 5 figures, 1 table

Error channels in quantum nondemolition measurements on spin systems

Authors: Benjamin Joecker, Holly G. Stemp, Irene Fernández de Fuentes, Mark A. I. Johnson, Andrea Morello

Abstract: Quantum nondemolition (QND) measurements are a precious resource for quantum information processing. Repetitive QND measurements can boost the fidelity of qubit preparation and measurement, even when the underlying single-shot measurements are of low fidelity. However, this fidelity boost is limited by the degree in which the physical system allows for a truly QND process -- slight deviations from… ▽ More Quantum nondemolition (QND) measurements are a precious resource for quantum information processing. Repetitive QND measurements can boost the fidelity of qubit preparation and measurement, even when the underlying single-shot measurements are of low fidelity. However, this fidelity boost is limited by the degree in which the physical system allows for a truly QND process -- slight deviations from ideal QND measurement result in bit flip errors (`quantum jumps') if the measurement is repeated too often. Here, we develop a theoretical framework to understand and quantify the resulting error arising from deviation from perfect QND measurement in model spin qubit systems. We first develop our model on the ubiquitous example of exchange-coupled electron spins qubits tunnel-coupled to a charge reservoir. We then extend it to electron-nuclear spin systems, to illustrate the crucial similarities and differences between the two limits. Applied to the well-understood platform of a donor nuclear spin in silicon, the model shows excellent agreement with experiments. For added generality, we conclude the work by considering the effect of anisotropic spin couplings. △ Less

Submitted 27 November, 2023; v1 submitted 26 July, 2023; originally announced July 2023.

Journal ref: Phys.Rev.B 109 (2024) 085302

Navigating the 16-dimensional Hilbert space of a high-spin donor qudit with electric and magnetic fields

Authors: Irene Fernández de Fuentes, Tim Botzem, Mark A. I. Johnson, Arjen Vaartjes, Serwan Asaad, Vincent Mourik, Fay E. Hudson, Kohei M. Itoh, Brett C. Johnson, Alexander M. Jakob, Jeffrey C. McCallum, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: Efficient scaling and flexible control are key aspects of useful quantum computing hardware. Spins in semiconductors combine quantum information processing with electrons, holes or nuclei, control with electric or magnetic fields, and scalable coupling via exchange or dipole interaction. However, accessing large Hilbert space dimensions has remained challenging, due to the short-distance nature of… ▽ More Efficient scaling and flexible control are key aspects of useful quantum computing hardware. Spins in semiconductors combine quantum information processing with electrons, holes or nuclei, control with electric or magnetic fields, and scalable coupling via exchange or dipole interaction. However, accessing large Hilbert space dimensions has remained challenging, due to the short-distance nature of the interactions. Here, we present an atom-based semiconductor platform where a 16-dimensional Hilbert space is built by the combined electron-nuclear states of a single antimony donor in silicon. We demonstrate the ability to navigate this large Hilbert space using both electric and magnetic fields, with gate fidelity exceeding 99.8% on the nuclear spin, and unveil fine details of the system Hamiltonian and its susceptibility to control and noise fields. These results establish high-spin donors as a rich platform for practical quantum information and to explore quantum foundations. △ Less

Submitted 14 June, 2023; v1 submitted 12 June, 2023; originally announced June 2023.

Comments: 31 pages and 19 figures including Supplementary Materials

Journal ref: Nat Commun 15, 1380 (2024)

Assessment of error variation in high-fidelity two-qubit gates in silicon

Authors: Tuomo Tanttu, Wee Han Lim, Jonathan Y. Huang, Nard Dumoulin Stuyck, Will Gilbert, Rocky Y. Su, MengKe Feng, Jesus D. Cifuentes, Amanda E. Seedhouse, Stefan K. Seritan, Corey I. Ostrove, Kenneth M. Rudinger, Ross C. C. Leon, Wister Huang, Christopher C. Escott, Kohei M. Itoh, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Robin Blume-Kohout, Stephen D. Bartlett, Andrea Morello, Arne Laucht, Chih Hwan Yang , et al. (2 additional authors not shown)

Abstract: Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed to errors due to materials-induced variability between qubits, which leads to performance inconsistencies. Here we study the errors in a spin qubit pro… ▽ More Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed to errors due to materials-induced variability between qubits, which leads to performance inconsistencies. Here we study the errors in a spin qubit processor, tying them to their physical origins. We leverage this knowledge to demonstrate consistent and repeatable operation with above 99% fidelity of two-qubit gates in the technologically important silicon metal-oxide-semiconductor (SiMOS) quantum dot platform. We undertake a detailed study of these operations by analysing the physical errors and fidelities in multiple devices through numerous trials and extended periods to ensure that we capture the variation and the most common error types. Physical error sources include the slow nuclear and electrical noise on single qubits and contextual noise. The identification of the noise sources can be used to maintain performance within tolerance as well as inform future device fabrication. Furthermore, we investigate the impact of qubit design, feedback systems, and robust gates on implementing scalable, high-fidelity control strategies. These results are achieved by using three different characterization methods, we measure entangling gate fidelities ranging from 96.8% to 99.8%. Our analysis tools identify the causes of qubit degradation and offer ways understand their physical mechanisms. These results highlight both the capabilities and challenges for the scaling up of silicon spin-based qubits into full-scale quantum processors. △ Less

Submitted 15 March, 2024; v1 submitted 7 March, 2023; originally announced March 2023.

Jellybean quantum dots in silicon for qubit coupling and on-chip quantum chemistry

Authors: Zeheng Wang, MengKe Feng, Santiago Serrano, William Gilbert, Ross C. C. Leon, Tuomo Tanttu, Philip Mai, Dylan Liang, Jonathan Y. Huang, Yue Su, Wee Han Lim, Fay E. Hudson, Christopher C. Escott, Andrea Morello, Chih Hwan Yang, Andrew S. Dzurak, Andre Saraiva, Arne Laucht

Abstract: The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up quantum processors. Furthermore, classical control electronics can be integrated on-chip, in-between the qubits, if an architecture with sparse arrays of qubits is chosen. In such an architecture qubits are either transpor… ▽ More The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up quantum processors. Furthermore, classical control electronics can be integrated on-chip, in-between the qubits, if an architecture with sparse arrays of qubits is chosen. In such an architecture qubits are either transported across the chip via shuttling, or coupled via mediating quantum systems over short-to-intermediate distances. This paper investigates the charge and spin characteristics of an elongated quantum dot -- a so-called jellybean quantum dot -- for the prospects of acting as a qubit-qubit coupler. Charge transport, charge sensing and magneto-spectroscopy measurements are performed on a SiMOS quantum dot device at mK temperature, and compared to Hartree-Fock multi-electron simulations. At low electron occupancies where disorder effects and strong electron-electron interaction dominate over the electrostatic confinement potential, the data reveals the formation of three coupled dots, akin to a tunable, artificial molecule. One dot is formed centrally under the gate and two are formed at the edges. At high electron occupancies, these dots merge into one large dot with well-defined spin states, verifying that jellybean dots have the potential to be used as qubit couplers in future quantum computing architectures. △ Less

Submitted 8 August, 2022; originally announced August 2022.

An electrically-driven single-atom `flip-flop' qubit

Authors: Rostyslav Savytskyy, Tim Botzem, Irene Fernandez de Fuentes, Benjamin Joecker, Jarryd J. Pla, Fay E. Hudson, Kohei M. Itoh, Alexander M. Jakob, Brett C. Johnson, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: The spins of atoms and atom-like systems are among the most coherent objects in which to store quantum information. However, the need to address them using oscillating magnetic fields hinders their integration with quantum electronic devices. Here we circumvent this hurdle by operating a single-atom `flip-flop' qubit in silicon, where quantum information is encoded in the electron-nuclear states o… ▽ More The spins of atoms and atom-like systems are among the most coherent objects in which to store quantum information. However, the need to address them using oscillating magnetic fields hinders their integration with quantum electronic devices. Here we circumvent this hurdle by operating a single-atom `flip-flop' qubit in silicon, where quantum information is encoded in the electron-nuclear states of a phosphorus donor. The qubit is controlled using local electric fields at microwave frequencies, produced within a metal-oxide-semiconductor device. The electrical drive is mediated by the modulation of the electron-nuclear hyperfine coupling, a method that can be extended to many other atomic and molecular systems. These results pave the way to the construction of solid-state quantum processors where dense arrays of atoms can be controlled using only local electric fields. △ Less

Submitted 2 January, 2023; v1 submitted 9 February, 2022; originally announced February 2022.

Comments: 26 pages, 17 figures. v3 includes Supplementary Materials

Quantum-Coherent Nanoscience

Authors: Andreas J. Heinrich, William D. Oliver, Lieven Vandersypen, Arzhang Ardavan, Roberta Sessoli, Daniel Loss, Ania Bleszynski Jayich, Joaquin Fernandez-Rossier, Arne Laucht, Andrea Morello

Abstract: For the past three decades, nanoscience has widely affected many areas in physics, chemistry, and engineering, and has led to numerous fundamental discoveries as well as applications and products. Concurrently, quantum science and technology has developed into a cross-disciplinary research endeavour connecting these same areas and holds a burgeoning commercial promise. Although quantum physics dic… ▽ More For the past three decades, nanoscience has widely affected many areas in physics, chemistry, and engineering, and has led to numerous fundamental discoveries as well as applications and products. Concurrently, quantum science and technology has developed into a cross-disciplinary research endeavour connecting these same areas and holds a burgeoning commercial promise. Although quantum physics dictates the behaviour of nanoscale objects, quantum coherence, which is central to quantum information, communication and sensing has not played an explicit role in much of nanoscience. This Review describes fundamental principles and practical applications of quantum coherence in nanoscale systems, a research area we call quantum-coherent nanoscience. We structure this manuscript according to specific degrees of freedom that can be quantum-coherently controlled in a given nanoscale system such as charge, spin, mechanical motion, and photons. We review the current state of the art and focus on outstanding challenges and opportunities unlocked by the merging of nanoscience and coherent quantum operations. △ Less

Submitted 3 February, 2022; originally announced February 2022.

Comments: 34 pages, 6 figures, 2 boxes

Journal ref: Nature Nanotechnology 16, 1318 (2021)

Near-Surface Electrical Characterisation of Silicon Electronic Devices Using Focused keV Ions

Authors: Simon G. Robson, Paul Räcke, Alexander M. Jakob, Nicholas Collins, Hannes R. Firgau, Vivien Schmitt, Vincent Mourik, Andrea Morello, Edwin Mayes, Daniel Spemann, David N. Jamieson

Abstract: The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step forward requires a deterministic fabrication method to create large-scale arrays of donors, featuring few hundred nanometre inter-donor spacing. Here, we explore t… ▽ More The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step forward requires a deterministic fabrication method to create large-scale arrays of donors, featuring few hundred nanometre inter-donor spacing. Here, we explore the feasibility of this approach by implanting low-energy ions into silicon devices featuring an enlarged 60x60 $μ$m sensitive area and an ultra-thin 3.2 nm gate oxide - capable of hosting large-scale donor arrays. By combining a focused ion beam system incorporating an electron-beam-ion-source with in-vacuum ultra-low noise ion detection electronics, we first demonstrate a versatile method to spatially map the device response characteristics to shallowly implanted 12 keV $^1$H$_2^+$ ions. Despite the weak internal electric field, near-unity charge collection efficiency is obtained from the entire sensitive area. This can be explained by the critical role that the high-quality thermal gate oxide plays in the ion detection response, allowing an initial rapid diffusion of ion induced charge away from the implant site. Next, we adapt our approach to perform deterministic implantation of a few thousand 24 keV $^{40}$Ar$^{2+}$ ions into a predefined micro-volume, without any additional collimation. Despite the reduced ionisation from the heavier ion species, a fluence-independent detection confidence of $\geq$99.99% was obtained. Our system thus represents not only a new method for map** the near-surface electrical landscape of electronic devices, but also an attractive framework towards mask-free prototy** of large-scale donor arrays in silicon. △ Less

Submitted 31 May, 2022; v1 submitted 27 January, 2022; originally announced January 2022.

Comments: 10 pages, 5 figures

On-demand electrical control of spin qubits

Authors: Will Gilbert, Tuomo Tanttu, Wee Han Lim, MengKe Feng, Jonathan Y. Huang, Jesus D. Cifuentes, Santiago Serrano, Philip Y. Mai, Ross C. C. Leon, Christopher C. Escott, Kohei M. Itoh, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Andrea Morello, Arne Laucht, Chih Hwan Yang, Andre Saraiva, Andrew S. Dzurak

Abstract: Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays using silicon quantum dots, which offer high-fidelity control. Paradoxically, one of the most convenient control strategies is the integration of nanoscale magnet… ▽ More Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays using silicon quantum dots, which offer high-fidelity control. Paradoxically, one of the most convenient control strategies is the integration of nanoscale magnets to artificially enhance the coupling between spins and electric field, which in turn hampers the spin's noise immunity and adds architectural complexity. Here we demonstrate a technique that enables a \emph{switchable} interaction between spins and orbital motion of electrons in silicon quantum dots, without the presence of a micromagnet. The naturally weak effects of the relativistic spin-orbit interaction in silicon are enhanced by more than three orders of magnitude by controlling the energy quantisation of electrons in the nanostructure, enhancing the orbital motion. Fast electrical control is demonstrated in multiple devices and electronic configurations, highlighting the utility of the technique. Using the electrical drive we achieve coherence time $T_{2,{\rm Hahn}}\approx50 μ$s, fast single-qubit gates with ${T_{π/2}=3}$ ns and gate fidelities of 99.93 % probed by randomised benchmarking. The higher gate speeds and better compatibility with CMOS manufacturing enabled by on-demand electric control improve the prospects for realising scalable silicon quantum processors. △ Less

Submitted 18 March, 2022; v1 submitted 17 January, 2022; originally announced January 2022.

Journal ref: Nature Nanotechnology (2023)

Beating the thermal limit of qubit initialization with a Bayesian Maxwell's demon

Authors: Mark A. I. Johnson, Mateusz T. Mądzik, Fay E. Hudson, Kohei M. Itoh, Alexander M. Jakob, David N. Jamieson, Andrew Dzurak, Andrea Morello

Abstract: Fault-tolerant quantum computing requires initializing the quantum register in a well-defined fiducial state. In solid-state systems, this is typically achieved through thermalization to a cold reservoir, such that the initialization fidelity is fundamentally limited by temperature. Here, we present a method of preparing a fiducial quantum state with a confidence beyond the thermal limit. It is ba… ▽ More Fault-tolerant quantum computing requires initializing the quantum register in a well-defined fiducial state. In solid-state systems, this is typically achieved through thermalization to a cold reservoir, such that the initialization fidelity is fundamentally limited by temperature. Here, we present a method of preparing a fiducial quantum state with a confidence beyond the thermal limit. It is based on real time monitoring of the qubit through a negative-result measurement -- the equivalent of a `Maxwell's demon' that triggers the experiment only upon the appearance of a qubit in the lowest-energy state. We experimentally apply it to initialize an electron spin qubit in silicon, achieving a ground-state initialization fidelity of 98.9(4)%, corresponding to a 20$\times$ reduction in initialization error compared to the unmonitored system. A fidelity approaching 99.9% could be achieved with realistic improvements in the bandwidth of the amplifier chain or by slowing down the rate of electron tunneling from the reservoir. We use a nuclear spin ancilla, measured in quantum nondemolition mode, to prove the value of the electron initialization fidelity far beyond the intrinsic fidelity of the electron readout. However, the method itself does not require an ancilla for its execution, saving the need for additional resources. The quantitative analysis of the initialization fidelity reveals that a simple picture of spin-dependent electron tunneling does not correctly describe the data. Our digital `Maxwell's demon' can be applied to a wide range of quantum systems, with minimal demands on control and detection hardware. △ Less

Submitted 1 November, 2022; v1 submitted 5 October, 2021; originally announced October 2021.

Comments: 15 pages, 7 figures

Journal ref: Physical Review X 12, (2022)

Engineering local strain for single-atom nuclear acoustic resonance in silicon

Authors: Laura A. O'Neill, Benjamin Joecker, Andrew D. Baczewski, Andrea Morello

Abstract: Mechanical strain plays a key role in the physics and operation of nanoscale semiconductor systems, including quantum dots and single-dopant devices. Here we describe the design of a nanoelectronic device where a single nuclear spin is coherently controlled via nuclear acoustic resonance (NAR) through the local application of dynamical strain. The strain drives spin transitions by modulating the n… ▽ More Mechanical strain plays a key role in the physics and operation of nanoscale semiconductor systems, including quantum dots and single-dopant devices. Here we describe the design of a nanoelectronic device where a single nuclear spin is coherently controlled via nuclear acoustic resonance (NAR) through the local application of dynamical strain. The strain drives spin transitions by modulating the nuclear quadrupole interaction. We adopt an AlN piezoelectric actuator compatible with standard silicon metal-oxide-semiconductor processing, and optimize the device layout to maximize the NAR drive. We predict NAR Rabi frequencies of order 200 Hz for a single $^{123}$Sb nucleus in a wide region of the device. Spin transitions driven directly by electric fields are suppressed in the center of the device, allowing the observation of pure NAR. Using electric field gradient-elastic tensors calculated by density-functional theory, we extend our predictions to other high-spin group-V donors in silicon, and to the isoelectronic $^{73}$Ge atom. △ Less

Submitted 30 August, 2021; originally announced August 2021.

Comments: 6 pages, 5 figures

A near-ideal degenerate parametric amplifier

Authors: Daniel J. Parker, Mykhailo Savytskyi, Wyatt Vine, Arne Laucht, Timothy Duty, Andrea Morello, Arne L. Grimsmo, Jarryd J. Pla

Abstract: Degenerate parametric amplifiers (DPAs) exhibit the unique property of phase-sensitive gain and can be used to noiselessly amplify small signals or squeeze field fluctuations beneath the vacuum level. In the microwave domain, these amplifiers have been utilized to measure qubits in elementary quantum processors, search for dark matter, facilitate high-sensitivity spin resonance spectroscopy and ha… ▽ More Degenerate parametric amplifiers (DPAs) exhibit the unique property of phase-sensitive gain and can be used to noiselessly amplify small signals or squeeze field fluctuations beneath the vacuum level. In the microwave domain, these amplifiers have been utilized to measure qubits in elementary quantum processors, search for dark matter, facilitate high-sensitivity spin resonance spectroscopy and have even been proposed as the building blocks for a measurement based quantum computer. Until now, microwave DPAs have almost exclusively been made from nonlinear Josephson junctions, which exhibit high-order nonlinearities that limit their dynamic range and squeezing potential. In this work we investigate a new microwave DPA that exploits a nonlinearity engineered from kinetic inductance. The device has a simple design and displays a dynamic range that is four orders of magnitude greater than state-of-the-art Josephson DPAs. We measure phase sensitive gains up to 50 dB and demonstrate a near-quantum-limited noise performance. Additionally, we show that the higher-order nonlinearities that limit other microwave DPAs are almost non-existent for this amplifier, which allows us to demonstrate its exceptional squeezing potential by measuring the deamplification of coherent states by as much as 26 dB. △ Less

Submitted 26 August, 2021; v1 submitted 23 August, 2021; originally announced August 2021.

Journal ref: Phys. Rev. Applied 17, 034064 (2022)

Precision tomography of a three-qubit donor quantum processor in silicon

Authors: Mateusz T. Mądzik, Serwan Asaad, Akram Youssry, Benjamin Joecker, Kenneth M. Rudinger, Erik Nielsen, Kevin C. Young, Timothy J. Proctor, Andrew D. Baczewski, Arne Laucht, Vivien Schmitt, Fay E. Hudson, Kohei M. Itoh, Alexander M. Jakob, Brett C. Johnson, David N. Jamieson, Andrew S. Dzurak, Christopher Ferrie, Robin Blume-Kohout, Andrea Morello

Abstract: Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, due to the lack of methods to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to… ▽ More Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, due to the lack of methods to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to sustain fault-tolerant quantum computation. Here we demonstrate universal quantum logic operations using a pair of ion-implanted 31P donor nuclei in a silicon nanoelectronic device. A nuclear two-qubit controlled-Z gate is obtained by imparting a geometric phase to a shared electron spin, and used to prepare entangled Bell states with fidelities up to 94.2(2.7)%. The quantum operations are precisely characterised using gate set tomography (GST), yielding one-qubit average gate fidelities up to 99.95(2)%, two-qubit average gate fidelity of 99.37(11)% and two-qubit preparation/measurement fidelities of 98.95(4)%. These three metrics indicate that nuclear spins in silicon are approaching the performance demanded in fault-tolerant quantum processors. We then demonstrate entanglement between the two nuclei and the shared electron by producing a Greenberger-Horne-Zeilinger three-qubit state with 92.5(1.0)% fidelity. Since electron spin qubits in semiconductors can be further coupled to other electrons or physically shuttled across different locations, these results establish a viable route for scalable quantum information processing using donor nuclear and electron spins. △ Less

Submitted 27 January, 2022; v1 submitted 6 June, 2021; originally announced June 2021.

Comments: 51 pages, including supplementary information. v3 reflects the final published version

Journal ref: Nature 601, 348 (2022)

Fast coherent control of an NV- spin ensemble using a KTaO3 dielectric resonator at cryogenic temperatures

Authors: Hyma H. Vallabhapurapu, James P. Slack-Smith, Vikas K. Sewani, Chris Adambukulam, Andrea Morello, Jarryd J. Pla, Arne Laucht

Abstract: Microwave delivery to samples in a cryogenic environment can pose experimental challenges such as restricting optical access, space constraints and heat generation. Moreover, existing solutions that overcome various experimental restrictions do not necessarily provide a large, homogeneous oscillating magnetic field over macroscopic lengthscales, which is required for control of spin ensembles or f… ▽ More Microwave delivery to samples in a cryogenic environment can pose experimental challenges such as restricting optical access, space constraints and heat generation. Moreover, existing solutions that overcome various experimental restrictions do not necessarily provide a large, homogeneous oscillating magnetic field over macroscopic lengthscales, which is required for control of spin ensembles or fast gate operations in scaled-up quantum computing implementations. Here we show fast and coherent control of a negatively charged nitrogen vacancy spin ensemble by taking advantage of the high permittivity of a KTaO3 dielectric resonator at cryogenic temperatures. We achieve Rabi frequencies of up to 48 MHz, with the total field-to-power conversion ratio $C_{\rm P} = $ 9.66 mT/$\sqrt{\rm W}$ ($\approx191$ MHz/$\sqrt{\rm W}$). We use the nitrogen vacancy center spin ensemble to probe the quality factor, the coherent enhancement, and the spatial distribution of the magnetic field inside the diamond sample. The key advantages of the dielectric resonator utilised in this work are: ease of assembly, in-situ tuneability, a high magnetic field conversion efficiency, a low volume footprint, and optical transparency. This makes KTaO3 dielectric resonators a promising platform for the delivery of microwave fields for the control of spins in various materials at cryogenic temperatures. △ Less

Submitted 29 August, 2021; v1 submitted 14 May, 2021; originally announced May 2021.

Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory

Authors: Benjamin Joecker, Andrew D. Baczewski, John K. Gamble, Jarryd J. Pla, André Saraiva, Andrea Morello

Abstract: Donor spin in silicon have achieved record values of coherence times and single-qubit gate fidelities. The next stage of development involves demonstrating high-fidelity two-qubit logic gates, where the most natural coupling is the exchange interaction. To aid the efficient design of scalable donor-based quantum processors, we model the two-electron wave function using a full configuration interac… ▽ More Donor spin in silicon have achieved record values of coherence times and single-qubit gate fidelities. The next stage of development involves demonstrating high-fidelity two-qubit logic gates, where the most natural coupling is the exchange interaction. To aid the efficient design of scalable donor-based quantum processors, we model the two-electron wave function using a full configuration interaction method within a multi-valley effective mass theory. We exploit the high computational efficiency of our code to investigate the exchange interaction, valley population, and electron densities for two phosphorus donors in a wide range of lattice positions, orientations, and as a function of applied electric fields. The outcomes are visualized with interactive images where donor positions can be swept while watching the valley and orbital components evolve accordingly. Our results provide a physically intuitive and quantitatively accurate understanding of the placement and tuning criteria necessary to achieve high-fidelity two-qubit gates with donors in silicon. △ Less

Submitted 11 December, 2020; originally announced December 2020.

An ultra-stable 1.5 tesla permanent magnet assembly for qubit experiments at cryogenic temperatures

Authors: C. Adambukulam, V. K. Sewani, H. G. Stemp, S. Asaad, M. T. Mądzik, A. Morello, A. Laucht

Abstract: Magnetic fields are a standard tool in the toolbox of every physicist, and are required for the characterization of materials, as well as the polarization of spins in nuclear magnetic resonance or electron paramagnetic resonance experiments. Quite often a static magnetic field of sufficiently large, but fixed magnitude is suitable for these tasks. Here we present a permanent magnet assembly that c… ▽ More Magnetic fields are a standard tool in the toolbox of every physicist, and are required for the characterization of materials, as well as the polarization of spins in nuclear magnetic resonance or electron paramagnetic resonance experiments. Quite often a static magnetic field of sufficiently large, but fixed magnitude is suitable for these tasks. Here we present a permanent magnet assembly that can achieve magnetic field strengths of up to 1.5T over an air gap length of 7mm. The assembly is based on a Halbach array of neodymium (NdFeB) magnets, with the inclusion of the soft magnetic material Supermendur to boost the magnetic field strength inside the air gap. We present the design, simulation and characterization of the permanent magnet assembly, measuring an outstanding magnetic field stability with a drift rate of |D| < 2.8 ppb/h. Our measurements demonstrate that this assembly can be used for spin qubit experiments inside a dilution refrigerator, successfully replacing the more expensive and bulky superconducting solenoids. △ Less

Submitted 11 August, 2021; v1 submitted 5 October, 2020; originally announced October 2020.

Comments: 10 pages, 5 figures

Donor spins in silicon for quantum technologies

Authors: Andrea Morello, Jarryd J. Pla, Patrice Bertet, David N. Jamieson

Abstract: Dopant atoms are ubiquitous in semiconductor technologies, providing the tailored electronic properties that underpin the modern digital information era. Harnessing the quantum nature of these atomic-scale objects represents a new and exciting technological revolution. In this article we describe the use of ion-implanted donor spins in silicon for quantum technologies. We review how to fabricate a… ▽ More Dopant atoms are ubiquitous in semiconductor technologies, providing the tailored electronic properties that underpin the modern digital information era. Harnessing the quantum nature of these atomic-scale objects represents a new and exciting technological revolution. In this article we describe the use of ion-implanted donor spins in silicon for quantum technologies. We review how to fabricate and operate single-atom spin qubits in silicon, obtaining some of the most coherent solid-state qubits, and we discuss pathways to scale up these qubits to build large quantum processors. Heavier group-V donors with large nuclear spins display electric quadrupole couplings that enable nuclear electric resonance, quantum chaos and strain sensing. Donor ensembles can be coupled to microwave cavities to develop hybrid quantum Turing machines. Counted, deterministic implantation of single donors, combined with novel methods for precision placement, will allow the integration of individual donors spins with industry-standard silicon fabrication processes, making implanted donors a prime physical platform for the second quantum revolution. △ Less

Submitted 8 September, 2020; originally announced September 2020.

Comments: 18 pages, 11 figures, 134 references. Published in the special issue of Advanced Quantum Technologies "Advancing Quantum Technologies - Chances and Challenges" edited by Rainer Blatt

Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon

Authors: Alexander M. Jakob, Simon G. Robson, Vivien Schmitt, Vincent Mourik, Matthias Posselt, Daniel Spemann, Brett C. Johnson, Hannes R. Firgau, Edwin Mayes, Jeffrey C. McCallum, Andrea Morello, David N. Jamieson

Abstract: The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of $^{31}$P, hyperfine clock transitions in $^{209}$Bi and electrically controllable $^{123}$Sb nuclear spins. However, architectures for scalable quantum devices requi… ▽ More The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of $^{31}$P, hyperfine clock transitions in $^{209}$Bi and electrically controllable $^{123}$Sb nuclear spins. However, architectures for scalable quantum devices require the ability to fabricate deterministic arrays of individual donor atoms, placed with sufficient precision to enable high-fidelity quantum operations. Here we employ on-chip electrodes with charge-sensitive electronics to demonstrate the implantation of single low-energy (14 keV) P$^+$ ions with an unprecedented $99.87\pm0.02$% confidence, while operating close to room-temperature. This permits integration with an atomic force microscope equipped with a scanning-probe ion aperture to address the critical issue of directing the implanted ions to precise locations. These results show that deterministic single-ion implantation can be a viable pathway for manufacturing large-scale donor arrays for quantum computation and other applications. △ Less

Submitted 9 September, 2020; v1 submitted 7 September, 2020; originally announced September 2020.

Comments: 12 pages, 4 figures

Coherent spin qubit transport in silicon

Authors: J. Yoneda, W. Huang, M. Feng, C. H. Yang, K. W. Chan, T. Tanttu, W. Gilbert, R. C. C. Leon, F. E. Hudson, K. M. Itoh, A. Morello, S. D. Bartlett, A. Laucht, A. Saraiva, A. S. Dzurak

Abstract: A fault-tolerant quantum processor may be configured using stationary qubits interacting only with their nearest neighbours, but at the cost of significant overheads in physical qubits per logical qubit. Such overheads could be reduced by coherently transporting qubits across the chip, allowing connectivity beyond immediate neighbours. Here we demonstrate high-fidelity coherent transport of an ele… ▽ More A fault-tolerant quantum processor may be configured using stationary qubits interacting only with their nearest neighbours, but at the cost of significant overheads in physical qubits per logical qubit. Such overheads could be reduced by coherently transporting qubits across the chip, allowing connectivity beyond immediate neighbours. Here we demonstrate high-fidelity coherent transport of an electron spin qubit between quantum dots in isotopically-enriched silicon. We observe qubit precession in the inter-site tunnelling regime and assess the impact of qubit transport using Ramsey interferometry and quantum state tomography techniques. We report a polarization transfer fidelity of 99.97% and an average coherent transfer fidelity of 99.4%. Our results provide key elements for high-fidelity, on-chip quantum information distribution, as long envisaged, reinforcing the scaling prospects of silicon-based spin qubits. △ Less

Submitted 3 September, 2020; v1 submitted 10 August, 2020; originally announced August 2020.

Journal ref: Nature Communications 12, 4114 (2021)

Spin thermometry and spin relaxation of optically detected Cr3+ ions in ruby Al2O3

Authors: Vikas K. Sewani, Rainer J. Stöhr, Roman Kolesov, Hyma H. Vallabhapurapu, Tobias Simmet, Andrea Morello, Arne Laucht

Abstract: Paramagnetic ions in solid state crystals form the basis for many advanced technologies such as lasers, masers, frequency standards, and quantum-enhanced sensors. One of the most-studied examples is the Cr3+ ion in sapphire (Al2O3), also known as ruby, which has been intensely studied in the 1950s and 1960s. However, despite decades of research on ruby, some of its fundamental optical and spin pro… ▽ More Paramagnetic ions in solid state crystals form the basis for many advanced technologies such as lasers, masers, frequency standards, and quantum-enhanced sensors. One of the most-studied examples is the Cr3+ ion in sapphire (Al2O3), also known as ruby, which has been intensely studied in the 1950s and 1960s. However, despite decades of research on ruby, some of its fundamental optical and spin properties have not yet been characterized at ultra low-temperatures. In this paper, we present optical measurements on a ruby crystal in a dilution refrigerator at ultra-low temperatures down to 20 mK. Analyzing the relative populations of its 4A2 ground state spin levels, we extract a lattice temperature of 143(7) mK under continuous laser excitation. We perform spin lattice relaxation T1 measurements in excellent agreement with the direct, one-phonon model. Furthermore, we perform optically detected magnetic resonance measurements showing magnetically driven transitions between the ground state spin levels for various magnetic fields. Our measurements characterize some of ruby's low temperature spin properties, and lay the foundations for more advanced spin control experiments. △ Less

Submitted 5 October, 2020; v1 submitted 15 July, 2020; originally announced July 2020.

Comments: 12 pages, 7 figures

Journal ref: Phys. Rev. B 102, 104114 (2020)

Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device

Authors: Mateusz T. Mądzik, Arne Laucht, Fay E. Hudson, Alexander M. Jakob, Brett C. Johnson, David N. Jamieson, Kohei M. Itoh, Andrew S. Dzurak, Andrea Morello

Abstract: Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single donor atom, introduced in the silicon by ion implantation, the quantum information can be stored for nearly 1 second. However, manufacturing a scalable quantum processor with this method is considered challenging, because of the exponential s… ▽ More Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single donor atom, introduced in the silicon by ion implantation, the quantum information can be stored for nearly 1 second. However, manufacturing a scalable quantum processor with this method is considered challenging, because of the exponential sensitivity of the exchange interaction that mediates the coupling between the qubits. Here we demonstrate the conditional, coherent control of an electron spin qubit in an exchange-coupled pair of $^{31}$P donors implanted in silicon. The coupling strength, $J = 32.06 \pm 0.06$ MHz, is measured spectroscopically with unprecedented precision. Since the coupling is weaker than the electron-nuclear hyperfine coupling $A \approx 90$ MHz which detunes the two electrons, a native two-qubit Controlled-Rotation gate can be obtained via a simple electron spin resonance pulse. This scheme is insensitive to the precise value of $J$, which makes it suitable for the scale-up of donor-based quantum computers in silicon that exploit the Metal-Oxide-Semiconductor fabrication protocols commonly used in the classical electronics industry. △ Less

Submitted 29 June, 2020; v1 submitted 8 June, 2020; originally announced June 2020.

Comments: 10 pages, 5 figures, plus Supplementary Information. v2 contains additional references, and a simpler explanation of two-qubit CROT gates for donors in silicon

Journal ref: Nature Communications 12:181 (2021)

Semiconductor Qubits In Practice

Authors: Anasua Chatterjee, Paul Stevenson, Silvano De Franceschi, Andrea Morello, Nathalie de Leon, Ferdinand Kuemmeth

Abstract: In recent years semiconducting qubits have undergone a remarkable evolution, making great strides in overcoming decoherence as well as in prospects for scalability, and have become one of the leading contenders for the development of large-scale quantum circuits. In this Review we describe the current state of the art in semiconductor charge and spin qubits based on gate-controlled semiconductor q… ▽ More In recent years semiconducting qubits have undergone a remarkable evolution, making great strides in overcoming decoherence as well as in prospects for scalability, and have become one of the leading contenders for the development of large-scale quantum circuits. In this Review we describe the current state of the art in semiconductor charge and spin qubits based on gate-controlled semiconductor quantum dots, shallow dopants, and color centers in wide band gap materials. We frame the relative strengths of the different semiconductor qubit implementations in the context of quantum simulations, computing, sensing and networks. By highlighting the status and future perspectives of the basic types of semiconductor qubits, this Review aims to serve as a technical introduction for non-specialists as well as a forward-looking reference for scientists intending to work in this field. △ Less

Submitted 13 May, 2020; originally announced May 2020.

Comments: Review article, feedback welcome, 27 pages, 5 figures

Report number: NBI QDEV 2020

Journal ref: Nature Reviews Physics (2021)

Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon

Authors: Kok Wai Chan, Harshad Sahasrabudhe, Wister Huang, Yu Wang, Henry C. Yang, Menno Veldhorst, Jason C. C. Hwang, Fahd A. Mohiyaddin, Fay E. Hudson, Kohei M. Itoh, Andre Saraiva, Andrea Morello, Arne Laucht, Rajib Rahman, Andrew S. Dzurak

Abstract: Quantum gates between spin qubits can be implemented leveraging the natural Heisenberg exchange interaction between two electrons in contact with each other. This interaction is controllable by electrically tailoring the overlap between electronic wavefunctions in quantum dot systems, as long as they occupy neighbouring dots. An alternative route is the exploration of superexchange - the coupling… ▽ More Quantum gates between spin qubits can be implemented leveraging the natural Heisenberg exchange interaction between two electrons in contact with each other. This interaction is controllable by electrically tailoring the overlap between electronic wavefunctions in quantum dot systems, as long as they occupy neighbouring dots. An alternative route is the exploration of superexchange - the coupling between remote spins mediated by a third idle electron that bridges the distance between quantum dots. We experimentally demonstrate direct exchange coupling and provide evidence for second neighbour mediated superexchange in a linear array of three single-electron spin qubits in silicon, inferred from the electron spin resonance frequency spectra. We confirm theoretically through atomistic modeling that the device geometry only allows for sizeable direct exchange coupling for neighbouring dots, while next nearest neighbour coupling cannot stem from the vanishingly small tail of the electronic wavefunction of the remote dots, and is only possible if mediated. △ Less

Submitted 16 April, 2020; originally announced April 2020.

Comments: 20 pages, 1.4MB, 4 figures

Journal ref: Nano Letters 2021, 21, 3, 1517-1522

Pauli Blockade in Silicon Quantum Dots with Spin-Orbit Control

Authors: Amanda Seedhouse, Tuomo Tanttu, Ross C. C. Leon, Ruichen Zhao, Kuan Yen Tan, Bas Hensen, Fay E. Hudson, Kohei M. Itoh, Jun Yoneda, Chih Hwan Yang, Andrea Morello, Arne Laucht, Susan N. Coppersmith, Andre Saraiva, Andrew S. Dzurak

Abstract: Quantum computation relies on accurate measurements of qubits not only for reading the output of the calculation, but also to perform error correction. Most proposed scalable silicon architectures utilize Pauli blockade of triplet states for spin-to-charge conversion. In recent experiments, there have been instances when instead of conventional triplet blockade readout, Pauli blockade is sustained… ▽ More Quantum computation relies on accurate measurements of qubits not only for reading the output of the calculation, but also to perform error correction. Most proposed scalable silicon architectures utilize Pauli blockade of triplet states for spin-to-charge conversion. In recent experiments, there have been instances when instead of conventional triplet blockade readout, Pauli blockade is sustained only between parallel spin configurations, with $|T_0\rangle$ relaxing quickly to the singlet state and leaving $|T_+\rangle$ and $|T_-\rangle$ states blockaded -- which we call \textit{parity readout}. Both types of blockade can be used for readout in quantum computing, but it is crucial to maximize the fidelity and understand in which regime the system operates. We devise and perform an experiment in which the crossover between parity and singlet-triplet readout can be identified by investigating the underlying physics of the $|T_0\rangle$ relaxation rate. This rate is tunable over four orders of magnitude by controlling the Zeeman energy difference between the dots induced by spin-orbit coupling, which in turn depends on the direction of the applied magnetic field. We suggest a theoretical model incorporating charge noise and relaxation effects that explains quantitatively our results. Investigating the model both analytically and numerically, we identify strategies to obtain on-demand either singlet-triplet or parity readout consistently across large arrays of dots. We also discuss how parity readout can be used to perform full two-qubit state tomography and its impact on quantum error detection schemes in large-scale silicon quantum computers. △ Less

Submitted 13 May, 2021; v1 submitted 15 April, 2020; originally announced April 2020.

Comments: Updated title and text

Journal ref: PRX Quantum 2, 010303 (2021)

Measuring out-of-time-ordered correlation functions without reversing time evolution

Authors: Philip Daniel Blocher, Serwan Asaad, Vincent Mourik, Mark A. I. Johnson, Andrea Morello, Klaus Mølmer

Abstract: Out-of-time-ordered correlation functions (OTOCs) play a crucial role in the study of thermalization, entanglement, and quantum chaos, as they quantify the scrambling of quantum information due to complex interactions. As a consequence of their out-of-time-ordered nature, OTOCs are difficult to measure experimentally. Here we propose an OTOC measurement protocol that does not rely on the reversal… ▽ More Out-of-time-ordered correlation functions (OTOCs) play a crucial role in the study of thermalization, entanglement, and quantum chaos, as they quantify the scrambling of quantum information due to complex interactions. As a consequence of their out-of-time-ordered nature, OTOCs are difficult to measure experimentally. Here we propose an OTOC measurement protocol that does not rely on the reversal of time evolution and is easy to implement in a range of experimental settings. The protocol accounts for both pure and mixed initial states, and is applicable to systems that interact with environmental degrees of freedom. We demonstrate the application of our protocol by the characterization of scrambling in a periodically-driven spin that exhibits quantum chaos. △ Less

Submitted 26 October, 2022; v1 submitted 9 March, 2020; originally announced March 2020.

Comments: 12 pages, 6 figures. Updated figure labels and author affiliation. Made a few minor edits to the main text

Journal ref: Phys. Rev. A 106, 042429 (2022)

Controllable freezing of the nuclear spin bath in a single-atom spin qubit

Authors: Mateusz T. Mądzik, Thaddeus D. Ladd, Fay E. Hudson, Kohei M. Itoh, Alexander M. Jakob, Brett C. Johnson, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Arne Laucht, Andrea Morello

Abstract: The quantum coherence and gate fidelity of electron spin qubits in semiconductors is often limited by noise arising from coupling to a bath of nuclear spins. Isotopic enrichment of spin-zero nuclei such as $^{28}$Si has led to spectacular improvements of the dephasing time $T_2^*$ which, surprisingly, can extend two orders of magnitude beyond theoretical expectations. Using a single-atom $^{31}$P… ▽ More The quantum coherence and gate fidelity of electron spin qubits in semiconductors is often limited by noise arising from coupling to a bath of nuclear spins. Isotopic enrichment of spin-zero nuclei such as $^{28}$Si has led to spectacular improvements of the dephasing time $T_2^*$ which, surprisingly, can extend two orders of magnitude beyond theoretical expectations. Using a single-atom $^{31}$P qubit in enriched $^{28}$Si, we show that the abnormally long $T_2^*$ is due to the controllable freezing of the dynamics of the residual $^{29}$Si nuclei close to the donor. Our conclusions are supported by a nearly parameter-free modeling of the $^{29}$Si nuclear spin dynamics, which reveals the degree of back-action provided by the electron spin as it interacts with the nuclear bath. This study clarifies the limits of ergodic assumptions in analyzing many-body spin-problems under conditions of strong, frequent measurement, and provides novel strategies for maximizing coherence and gate fidelity of spin qubits in semiconductors. △ Less

Submitted 25 July, 2019; originally announced July 2019.

Comments: 11 pages, 5 figures

Journal ref: Science Advances 6 : eaba3442 (2020)

Coherent electrical control of a single high-spin nucleus in silicon

Authors: Serwan Asaad, Vincent Mourik, Benjamin Joecker, Mark A. I. Johnson, Andrew D. Baczewski, Hannes R. Firgau, Mateusz T. Mądzik, Vivien Schmitt, Jarryd J. Pla, Fay E. Hudson, Kohei M. Itoh, Jeffrey C. McCallum, Andrew S. Dzurak, Arne Laucht, Andrea Morello

Abstract: Nuclear spins are highly coherent quantum objects. In large ensembles, their control and detection via magnetic resonance is widely exploited, e.g. in chemistry, medicine, materials science and mining. Nuclear spins also featured in early ideas and demonstrations of quantum information processing. Scaling up these ideas requires controlling individual nuclei, which can be detected when coupled to… ▽ More Nuclear spins are highly coherent quantum objects. In large ensembles, their control and detection via magnetic resonance is widely exploited, e.g. in chemistry, medicine, materials science and mining. Nuclear spins also featured in early ideas and demonstrations of quantum information processing. Scaling up these ideas requires controlling individual nuclei, which can be detected when coupled to an electron. However, the need to address the nuclei via oscillating magnetic fields complicates their integration in multi-spin nanoscale devices, because the field cannot be localized or screened. Control via electric fields would resolve this problem, but previous methods relied upon transducing electric signals into magnetic fields via the electron-nuclear hyperfine interaction, which severely affects the nuclear coherence. Here we demonstrate the coherent quantum control of a single antimony (spin-7/2) nucleus, using localized electric fields produced within a silicon nanoelectronic device. The method exploits an idea first proposed in 1961 but never realized experimentally with a single nucleus. Our results are quantitatively supported by a microscopic theoretical model that reveals how the purely electrical modulation of the nuclear electric quadrupole interaction, in the presence of lattice strain, results in coherent nuclear spin transitions. The spin dephasing time, 0.1 seconds, surpasses by orders of magnitude those obtained via methods that require a coupled electron spin for electrical drive. These results show that high-spin quadrupolar nuclei could be deployed as chaotic models, strain sensors and hybrid spin-mechanical quantum systems using all-electrical controls. Integrating electrically controllable nuclei with quantum dots could pave the way to scalable nuclear- and electron-spin-based quantum computers in silicon that operate without the need for oscillating magnetic fields. △ Less

Submitted 3 June, 2019; originally announced June 2019.

Comments: Main text and figures followed by methods, extended data, and supplementary information

Journal ref: Nature 579, 205 (2020)

Silicon quantum processor unit cell operation above one Kelvin

Authors: C. H. Yang, R. C. C. Leon, J. C. C. Hwang, A. Saraiva, T. Tanttu, W. Huang, J. Camirand Lemyre, K. W. Chan, K. Y. Tan, F. E. Hudson, K. M. Itoh, A. Morello, M. Pioro-Ladrière, A. Laucht, A. S. Dzurak

Abstract: Quantum computers are expected to outperform conventional computers for a range of important problems, from molecular simulation to search algorithms, once they can be scaled up to large numbers of quantum bits (qubits), typically millions. For most solid-state qubit technologies, e.g. those using superconducting circuits or semiconductor spins, scaling poses a significant challenge as every addit… ▽ More Quantum computers are expected to outperform conventional computers for a range of important problems, from molecular simulation to search algorithms, once they can be scaled up to large numbers of quantum bits (qubits), typically millions. For most solid-state qubit technologies, e.g. those using superconducting circuits or semiconductor spins, scaling poses a significant challenge as every additional qubit increases the heat generated, while the cooling power of dilution refrigerators is severely limited at their operating temperature below 100 mK. Here we demonstrate operation of a scalable silicon quantum processor unit cell, comprising two qubits confined to quantum dots (QDs) at $\sim$1.5 Kelvin. We achieve this by isolating the QDs from the electron reservoir, initialising and reading the qubits solely via tunnelling of electrons between the two QDs. We coherently control the qubits using electrically-driven spin resonance (EDSR) in isotopically enriched silicon $^{28}$Si, attaining single-qubit gate fidelities of 98.6% and coherence time $T_2^*$ = 2$μ$s during `hot' operation, comparable to those of spin qubits in natural silicon at millikelvin temperatures. Furthermore, we show that the unit cell can be operated at magnetic fields as low as 0.1 T, corresponding to a qubit control frequency of 3.5 GHz, where the qubit energy is well below the thermal energy. The unit cell constitutes the core building block of a full-scale silicon quantum computer, and satisfies layout constraints required by error correction architectures. Our work indicates that a spin-based quantum computer could be operated at elevated temperatures in a simple pumped $^4$He system, offering orders of magnitude higher cooling power than dilution refrigerators, potentially enabling classical control electronics to be integrated with the qubit array. △ Less

Submitted 19 June, 2019; v1 submitted 25 February, 2019; originally announced February 2019.

Journal ref: Nature 580, 350-354 (2020)

Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot

Authors: R. C. C. Leon, C. H. Yang, J. C. C. Hwang, J. Camirand Lemyre, T. Tanttu, W. Huang, K. W. Chan, K. Y. Tan, F. E. Hudson, K. M. Itoh, A. Morello, A. Laucht, M. Pioro-Ladriere, A. Saraiva, A. S. Dzurak

Abstract: Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in the semiconductor material, including at the atomic scale, di… ▽ More Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in the semiconductor material, including at the atomic scale, disrupt this analogy between atoms and quantum dots, so that real devices seldom display such a systematic many-electron arrangement. We demonstrate here an electrostatically-defined quantum dot that is robust to disorder, revealing a well defined shell structure. We observe four shells (31 electrons) with multiplicities given by spin and valley degrees of freedom. We explore various fillings consisting of a single valence electron -- namely 1, 5, 13 and 25 electrons -- as potential qubits, and we identify fillings that yield a total spin-1 on the dot. An integrated micromagnet allows us to perform electrically-driven spin resonance (EDSR). Higher shell states are shown to be more susceptible to the driving field, leading to faster Rabi rotations of the qubit. We investigate the impact of orbital excitations of the p- and d-shell electrons on single qubits as a function of the dot deformation. This allows us to tune the dot excitation spectrum and exploit it for faster qubit control. Furthermore, hotspots arising from this tunable energy level structure provide a pathway towards fast spin initialisation. The observation of spin-1 states may be exploited in the future to study symmetry-protected topological states in antiferromagnetic spin chains and their application to quantum computing. △ Less

Submitted 6 May, 2019; v1 submitted 5 February, 2019; originally announced February 2019.

Journal ref: Nature Communications 11, 797 (2020)

Single-spin qubits in isotopically enriched silicon at low magnetic field

Authors: R. Zhao, T. Tanttu, K. Y. Tan, B. Hensen, K. W. Chan, J. C. C. Hwang, R. C. C. Leon, C. H. Yang, W. Gilbert, F. E. Hudson, K. M. Itoh, A. A. Kiselev, T. D. Ladd, A. Morello, A. Laucht, A. S. Dzurak

Abstract: Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and significant on-chip real estate for electron reservoirs, both of which limit the prospects for large scale multi-qubit systems. Alternatively, singlet-triplet (ST) rea… ▽ More Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and significant on-chip real estate for electron reservoirs, both of which limit the prospects for large scale multi-qubit systems. Alternatively, singlet-triplet (ST) readout enables high-fidelity spin-state measurements in much lower magnetic fields, without the need for reservoirs. Here, we demonstrate low-field operation of metal-oxide-silicon (MOS) quantum dot qubits by combining coherent single-spin control with high-fidelity, single-shot, Pauli-spin-blockade-based ST readout. We discover that the qubits decohere faster at low magnetic fields with $T_{2}^{Rabi}=18.6$~$μ$s and $T_2^*=1.4$~$μ$s at 150~mT. Their coherence is limited by spin flips of residual $^{29}$Si nuclei in the isotopically enriched $^{28}$Si host material, which occur more frequently at lower fields. Our finding indicates that new trade-offs will be required to ensure the frequency stabilization of spin qubits and highlights the importance of isotopic enrichment of device substrates for the realization of a scalable silicon-based quantum processor. △ Less

Submitted 23 August, 2019; v1 submitted 19 December, 2018; originally announced December 2018.

Journal ref: Nat Commun 10, 5500 (2019)

Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices

Authors: Stefanie B. Tenberg, Serwan Asaad, Mateusz T. Mądzik, Mark A. I. Johnson, Benjamin Joecker, Arne Laucht, Fay E. Hudson, Kohei M. Itoh, A. Malwin Jakob, Brett C. Johnson, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Robert Joynt, Andrea Morello

Abstract: We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar to the environment of the spins. The measurements are conducted at low temperatures ($T\approx 100$~mK), as a function of external magnetic field $B_0$ and donor… ▽ More We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar to the environment of the spins. The measurements are conducted at low temperatures ($T\approx 100$~mK), as a function of external magnetic field $B_0$ and donor electrochemical potential $μ_{\rm D}$. We observe a magnetic field dependence of the form $1/T_1\propto B_0^5$ for $B_0\gtrsim 3\,$ T, corresponding to the phonon-induced relaxation typical of donors in the bulk. However, the relaxation rate varies by up to two orders of magnitude between different devices. We attribute these differences to variations in lattice strain at the location of the donor. For $B_0\lesssim 3\,$T, the relaxation rate changes to $1/T_1\propto B_0$ for two devices. This is consistent with relaxation induced by evanescent-wave Johnson noise created by the metal structures fabricated above the donors. At such low fields, where $T_1>1\,$s, we also observe and quantify the spurious increase of $1/T_1$ when the electrochemical potential of the spin excited state $|\uparrow\rangle$ comes in proximity to empty states in the charge reservoir, leading to spin-dependent tunneling that resets the spin to $|\downarrow\rangle$. These results give precious insights into the microscopic phenomena that affect spin relaxation in MOS nanoscale devices, and provide strategies for engineering spin qubits with improved spin lifetimes. △ Less

Submitted 26 March, 2019; v1 submitted 17 December, 2018; originally announced December 2018.

Comments: 14 pages, 8 figures. Version 2 has extensive text revisions, typo corrections, and two extra authors

Journal ref: Phys. Rev. B 99, 205306 (2019)

Gate-based single-shot readout of spins in silicon

Authors: A. West, B. Hensen, A. Jouan, T. Tanttu, C. H. Yang, A. Rossi, M. F. Gonzalez-Zalba, F. E. Hudson, A. Morello, D. J. Reilly, A. S. Dzurak

Abstract: Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using on-chip charge sensors, capacitively coupled to the quantum dots. However, as the number of qubits is increased, this approach becomes impractical due to the f… ▽ More Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using on-chip charge sensors, capacitively coupled to the quantum dots. However, as the number of qubits is increased, this approach becomes impractical due to the footprint and complexity of the charge sensors, combined with the required proximity to the quantum dots. Alternatively, the spin state can be measured directly by detecting the complex impedance of spin-dependent electron tunnelling between quantum dots. This can be achieved using radio-frequency reflectometry on a single gate electrode defining the quantum dot itself, significantly reducing gate count and architectural complexity, but thus far it has not been possible to achieve single-shot spin readout using this technique. Here, we detect single electron tunnelling in a double quantum dot and demonstrate that gate-based sensing can be used to read out the electron spin state in a single shot, with an average readout fidelity of 73%. The result demonstrates a key step towards the readout of many spin qubits in parallel, using a compact gate design that will be needed for a large-scale semiconductor quantum processor. △ Less

Submitted 1 October, 2018; v1 submitted 6 September, 2018; originally announced September 2018.

Journal ref: Nature Nanotechnology 14, 437-441 (2019)

Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction

Authors: Tuomo Tanttu, Bas Hensen, Kok Wai Chan, Henry Yang, Wister Huang, Michael Fogarty, Fay Hudson, Kohei Itoh, Dimitrie Culcer, Arne Laucht, Andrea Morello, Andrew Dzurak

Abstract: Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which degrade the performance of the qubits or, when understood and controlled, could be used as a powerful resource. To understand how to control this interaction we b… ▽ More Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which degrade the performance of the qubits or, when understood and controlled, could be used as a powerful resource. To understand how to control this interaction we build a detailed profile of the spin-orbit interaction of a silicon metal-oxide-semiconductor double quantum dot system. We probe the derivative of the Stark shift, $g$-factor and $g$-factor difference for two single-electron quantum dot qubits as a function of external magnetic field and find that they are dominated by spin-orbit interactions originating from the vector potential, consistent with recent theoretical predictions. Conversely, by populating the double dot with two electrons we probe the mixing of singlet and spin-polarized triplet states during electron tunneling, which we conclude is dominated by momentum-term spin-orbit interactions that varies from 1.85 MHz up to 27.5 MHz depending on the magnetic field orientation. Finally, we exploit the tunability of the derivative of the Stark shift of one of the dots to reduce its sensitivity to electric noise and observe an 80 % increase in $T_2^*$. We conclude that the tuning of the spin-orbit interaction will be crucial for scalable quantum computing in silicon and that the optimal setting will depend on the exact mode of qubit operations used. △ Less

Submitted 14 February, 2019; v1 submitted 26 July, 2018; originally announced July 2018.

Journal ref: Phys. Rev. X 9, 021028 (2019)

Silicon qubit fidelities approaching incoherent noise limits via pulse engineering

Authors: C. H. Yang, K. W. Chan, R. Harper, W. Huang, T. Evans, J. C. C. Hwang, B. Hensen, A. Laucht, T. Tanttu, F. E. Hudson, S. T. Flammia, K. M. Itoh, A. Morello, S. D. Bartlett, A. S. Dzurak

Abstract: The performance requirements for fault-tolerant quantum computing are very stringent. Qubits must be manipulated, coupled, and measured with error rates well below 1%. For semiconductor implementations, silicon quantum dot spin qubits have demonstrated average single-qubit Clifford gate error rates that approach this threshold, notably with error rates of 0.14% in isotopically enriched $^{28}$Si/S… ▽ More The performance requirements for fault-tolerant quantum computing are very stringent. Qubits must be manipulated, coupled, and measured with error rates well below 1%. For semiconductor implementations, silicon quantum dot spin qubits have demonstrated average single-qubit Clifford gate error rates that approach this threshold, notably with error rates of 0.14% in isotopically enriched $^{28}$Si/SiGe devices. This gate performance, together with high-fidelity two-qubit gates and measurements, is only known to meet the threshold for fault-tolerant quantum computing in some architectures when assuming that the noise is incoherent, and still lower error rates are needed to reduce overhead. Here we experimentally show that pulse engineering techniques, widely used in magnetic resonance, improve average Clifford gate error rates for silicon quantum dot spin qubits to 0.043%,a factor of 3 improvement on previous best results for silicon quantum dot devices. By including tomographically complete measurements in randomised benchmarking, we infer a higher-order feature of the noise called the unitarity, which measures the coherence of noise. This in turn allows us to theoretically predict that average gate error rates as low as 0.026% may be achievable with further pulse improvements. These fidelities are ultimately limited by Markovian noise, which we attribute to charge noise emanating from the silicon device structure itself, or the environment. △ Less

Submitted 27 January, 2020; v1 submitted 25 July, 2018; originally announced July 2018.

Journal ref: Nature Electronics 2, 151-158 (2019)

Fidelity benchmarks for two-qubit gates in silicon

Authors: W. Huang, C. H. Yang, K. W. Chan, T. Tanttu, B. Hensen, R. C. C. Leon, M. A. Fogarty, J. C. C. Hwang, F. E. Hudson, K. M. Itoh, A. Morello, A. Laucht, A. S. Dzurak

Abstract: Universal quantum computation will require qubit technology based on a scalable platform, together with quantum error correction protocols that place strict limits on the maximum infidelities for one- and two-qubit gate operations. While a variety of qubit systems have shown high fidelities at the one-qubit level, superconductor technologies have been the only solid-state qubits manufactured via s… ▽ More Universal quantum computation will require qubit technology based on a scalable platform, together with quantum error correction protocols that place strict limits on the maximum infidelities for one- and two-qubit gate operations. While a variety of qubit systems have shown high fidelities at the one-qubit level, superconductor technologies have been the only solid-state qubits manufactured via standard lithographic techniques which have demonstrated two-qubit fidelities near the fault-tolerant threshold. Silicon-based quantum dot qubits are also amenable to large-scale manufacture and can achieve high single-qubit gate fidelities (exceeding 99.9%) using isotopically enriched silicon. However, while two-qubit gates have been demonstrated in silicon, it has not yet been possible to rigorously assess their fidelities using randomized benchmarking, since this requires sequences of significant numbers of qubit operations ($\gtrsim 20$) to be completed with non-vanishing fidelity. Here, for qubits encoded on the electron spin states of gate-defined quantum dots, we demonstrate Bell state tomography with fidelities ranging from 80% to 89%, and two-qubit randomized benchmarking with an average Clifford gate fidelity of 94.7% and average Controlled-ROT (CROT) fidelity of 98.0%. These fidelities are found to be limited by the relatively slow gate times employed here compared with the decoherence times $T_2^*$ of the qubits. Silicon qubit designs employing fast gate operations based on high Rabi frequencies, together with advanced pulsing techniques, should therefore enable significantly higher fidelities in the near future. △ Less

Submitted 26 July, 2018; v1 submitted 14 May, 2018; originally announced May 2018.

Journal ref: Nature 569, 532-536 (2019)

Robust electric dipole transition at microwave frequencies for nuclear spin qubits in silicon

Authors: Guilherme Tosi, Fahd A. Mohiyaddin, Stefanie Tenberg, Arne Laucht, Andrea Morello

Abstract: The nuclear spin state of a phosphorus donor ($^{31}$P) in isotopically enriched silicon-28 is an excellent host to store quantum information in the solid state. The spin's insensitivity to electric fields yields a solid-state qubit with record coherence times, but also renders coupling to other quantum systems very challenging. Here, we describe how to generate a strong electric dipole ($>100$ De… ▽ More The nuclear spin state of a phosphorus donor ($^{31}$P) in isotopically enriched silicon-28 is an excellent host to store quantum information in the solid state. The spin's insensitivity to electric fields yields a solid-state qubit with record coherence times, but also renders coupling to other quantum systems very challenging. Here, we describe how to generate a strong electric dipole ($>100$ Debye) at microwave frequencies for the nuclear spin. This is achieved by applying a magnetic drive to the spin of the donor-bound electron, while simultaneously controlling its charge state with electric fields. Under certain conditions, the microwave magnetic drive also renders the nuclear spin resonance frequency and electric dipole strongly insensitive to electrical noise, yielding long ($>1$ ms) dephasing times and robust gate operations. The nuclear spin could then be strongly coupled to microwave resonators, with a vacuum Rabi splitting of order 1 MHz, or to other nuclear spins, nearly half a micrometer apart, via strong electric dipole-dipole interaction. This work brings the $^{31}$P nuclear qubit into the realm of hybrid quantum systems and opens up new avenues in quantum information processing. △ Less

Submitted 13 August, 2018; v1 submitted 25 June, 2017; originally announced June 2017.

Comments: 10 pages, 5 figures. Expanded and improved version

Journal ref: Phys. Rev. B 98, 075313 (2018)

Exploring quantum chaos with a single nuclear spin

Authors: Vincent Mourik, Serwan Asaad, Hannes Firgau, Jarryd J. Pla, Catherine Holmes, Gerard J. Milburn, Jeffrey C. McCallum, Andrea Morello

Abstract: Most classical dynamical systems are chaotic. The trajectories of two identical systems prepared in infinitesimally different initial conditions diverge exponentially with time. Quantum systems, instead, exhibit quasi-periodicity due to their discrete spectrum. Nonetheless, the dynamics of quantum systems whose classical counterparts are chaotic are expected to show some features that resemble cha… ▽ More Most classical dynamical systems are chaotic. The trajectories of two identical systems prepared in infinitesimally different initial conditions diverge exponentially with time. Quantum systems, instead, exhibit quasi-periodicity due to their discrete spectrum. Nonetheless, the dynamics of quantum systems whose classical counterparts are chaotic are expected to show some features that resemble chaotic motion. Among the many controversial aspects of the quantum-classical boundary, the emergence of chaos remains among the least experimentally verified. Time-resolved observations of quantum chaotic dynamics are particularly rare, and as yet unachieved in a single particle, where the subtle interplay between chaos and quantum measurement could be explored at its deepest levels. We present here a realistic proposal to construct a chaotic driven top from the nuclear spin of a single donor atom in silicon, in the presence of a nuclear quadrupole interaction. This system is exquisitely measurable and controllable, and possesses extremely long intrinsic quantum coherence times, allowing for the observation of subtle dynamical behavior over extended periods. We show that signatures of chaos are expected to arise for experimentally realizable parameters of the system, allowing the study of the relation between quantum decoherence and classical chaos, and the observation of dynamical tunneling. △ Less

Submitted 9 October, 2018; v1 submitted 14 March, 2017; originally announced March 2017.

Comments: revised and published version

Journal ref: Phys. Rev. E 98, 042206 (2018)

Coherent control via weak measurements in $^{31}$P single-atom electron and nuclear spin qubits

Authors: J. T. Muhonen, J. P. Dehollain, A. Laucht, S. Simmons, R. Kalra, F. E. Hudson, D. N. Jamieson, J. C. McCallum, K. M. Itoh, A. S. Dzurak, A. Morello

Abstract: The understanding of weak measurements and interaction-free measurements has greatly expanded the conceptual and experimental toolbox to explore the quantum world. Here we demonstrate single-shot variable-strength weak measurements of the electron and the nuclear spin states of a single $^{31}$P donor in silicon. We first show how the partial collapse of the nuclear spin due to measurement can be… ▽ More The understanding of weak measurements and interaction-free measurements has greatly expanded the conceptual and experimental toolbox to explore the quantum world. Here we demonstrate single-shot variable-strength weak measurements of the electron and the nuclear spin states of a single $^{31}$P donor in silicon. We first show how the partial collapse of the nuclear spin due to measurement can be used to coherently rotate the spin to a desired pure state. We explicitly demonstrate that phase coherence is preserved throughout multiple sequential single-shot weak measurements, and that the partial state collapse can be reversed. Second, we use the relation between measurement strength and perturbation of the nuclear state as a physical meter to extract the tunneling rates between the $^{31}$P donor and a nearby electron reservoir from data, conditioned on observing no tunneling events. Our experiments open avenues to measurement-based state preparation, steering and feedback protocols for spin systems in the solid state, and highlight the fundamental connection between information gain and state modification in quantum mechanics. △ Less

Submitted 26 February, 2017; originally announced February 2017.

Comments: 6 pages main text + 3 pages supplementary

Journal ref: Phys. Rev. B 98, 155201 (2018)

Interfacing spin qubits in quantum dots and donors - hot, dense and coherent

Authors: L. M. K. Vandersypen, H. Bluhm, J. S. Clarke, A. S. Dzurak, R. Ishihara, A. Morello, D. J. Reilly, L. R. Schreiber, M. Veldhorst

Abstract: Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circ… ▽ More Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circuits are completely different from those for classical circuits, as individual DC, pulsed and in some cases microwave control signals need to be routed from external sources to every qubit. This is further complicated by the requirement that these spin qubits currently operate at temperatures below 100 mK. Here we review several strategies that are considered to address this crucial challenge in scaling quantum circuits based on electron spin qubits. Key assets of spin qubits include the potential to operate at 1 to 4 K, the high density of quantum dots or donors combined with possibilities to space them apart as needed, the extremely long spin coherence times, and the rich options for integration with classical electronics based on the same technology. △ Less

Submitted 18 December, 2016; originally announced December 2016.

Comments: 13 pages, 4 figures

Journal ref: npj Quantum Information 3, 34 (2017)

Impact of g-factors and valleys on spin qubits in a silicon double quantum dot

Authors: J. C. C. Hwang, C. H. Yang, M. Veldhorst, N. Hendrickx, M. A. Fogarty, W. Huang, F. E. Hudson, A. Morello, A. S. Dzurak

Abstract: We define single electron spin qubits in a silicon MOS double quantum dot system. By map** the qubit resonance frequency as a function of gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an inter-valley spin-orbit coupling. We fit the data from which we extract an inter-valley coupling strength of 43 MHz. In addition, we observe a narrow resonance near th… ▽ More We define single electron spin qubits in a silicon MOS double quantum dot system. By map** the qubit resonance frequency as a function of gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an inter-valley spin-orbit coupling. We fit the data from which we extract an inter-valley coupling strength of 43 MHz. In addition, we observe a narrow resonance near the primary qubit resonance when we operate the device in the (1,1) charge configuration. The experimental data is consistent with a simulation involving two weakly exchanged-coupled spins with a g-factor difference of 1 MHz, of the same order as the Rabi frequency. We conclude that the narrow resonance is the result of driven transitions between the T- and T+ triplet states, using an ESR signal of frequency located halfway between the resonance frequencies of the two individual spins. The findings presented here offer an alternative method of implementing two-qubit gates, of relevance to the operation of larger scale spin qubit systems. △ Less

Submitted 26 February, 2017; v1 submitted 27 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. B 96, 045302 (2017)

Strain-induced spin resonance shifts in silicon devices

Authors: J. J. Pla, A. Bienfait, G. Pica, J. Mansir, F. A. Mohiyaddin, Z. Zeng, Y. M. Niquet, A. Morello, T. Schenkel, J. J. L. Morton, P. Bertet

Abstract: In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin line-widths and it is therefore important to study, understand and model such effects in order to better predict d… ▽ More In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin line-widths and it is therefore important to study, understand and model such effects in order to better predict device performance. Here we investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminium micro-resonator has been fabricated. The on-chip resonator provides two functions: first, it produces local strain in the silicon due to the larger thermal contraction of the aluminium, and second, it enables sensitive electron spin resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations we are able to reconstruct key features of our experiments, including the electron spin resonance spectra. Our results are consistent with a recently discovered mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain. △ Less

Submitted 9 January, 2018; v1 submitted 25 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. Applied 9, 044014 (2018)

A single-atom quantum memory in silicon

Authors: S. Freer, S. Simmons, A. Laucht, J. T. Muhonen, J. P. Dehollain, R. Kalra, F. A. Mohiyaddin, F. Hudson, K. M. Itoh, J. C. McCallum, D. N. Jamieson, A. S. Dzurak, A. Morello

Abstract: Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The $^{31}$P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the $^{31}$P nuclear spin), coex… ▽ More Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The $^{31}$P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the $^{31}$P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically-enriched $^{28}$Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity of $F_p =$81${\pm}$7%, a memory fidelity ($F_m$) of over 90%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses. △ Less

Submitted 5 September, 2016; v1 submitted 25 August, 2016; originally announced August 2016.

Comments: 14 pages, 6 figures. v2 has minor cosmetic improvements, and 11 additional references

Optimization of a solid-state electron spin qubit using Gate Set Tomography

Authors: Juan P. Dehollain, Juha T. Muhonen, Robin Blume-Kohout, Kenneth M. Rudinger, John King Gamble, Erik Nielsen, Arne Laucht, Stephanie Simmons, Rachpon Kalra, Andrew S. Dzurak, Andrea Morello

Abstract: State of the art qubit systems are reaching the gate fidelities required for scalable quantum computation architectures. Further improvements in the fidelity of quantum gates demands characterization and benchmarking protocols that are efficient, reliable and extremely accurate. Ideally, a benchmarking protocol should also provide information on how to rectify residual errors. Gate Set Tomography… ▽ More State of the art qubit systems are reaching the gate fidelities required for scalable quantum computation architectures. Further improvements in the fidelity of quantum gates demands characterization and benchmarking protocols that are efficient, reliable and extremely accurate. Ideally, a benchmarking protocol should also provide information on how to rectify residual errors. Gate Set Tomography (GST) is one such protocol designed to give detailed characterization of as-built qubits. We implemented GST on a high-fidelity electron-spin qubit confined by a single $^{31}$P atom in $^{28}$Si. The results reveal systematic errors that a randomized benchmarking analysis could measure but not identify, whereas GST indicated the need for improved calibration of the length of the control pulses. After introducing this modification, we measured a new benchmark average gate fidelity of $99.942(8)\%$, an improvement on the previous value of $99.90(2)\%$. Furthermore, GST revealed high levels of non-Markovian noise in the system, which will need to be understood and addressed when the qubit is used within a fault-tolerant quantum computation scheme. △ Less

Submitted 16 June, 2016; v1 submitted 9 June, 2016; originally announced June 2016.

Comments: 14 pages, 4 figures. v2: Updated references and included ancillary files

Journal ref: New Journal of Physics 18, 103018 (2016)

Breaking the rotating wave approximation for a strongly-driven, dressed, single electron spin

Authors: Arne Laucht, Stephanie Simmons, Rachpon Kalra, Guilherme Tosi, Juan P. Dehollain, Juha T. Muhonen, Solomon Freer, Fay E. Hudson, Kohei M. Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Andrea Morello

Abstract: We investigate the dynamics of a strongly-driven, microwave-dressed, donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field $B_1$ is used to dress the electron spin and create a new quantum system with a level splitting proportional to $B_1$. The dressed two-level system can then be driven by modulating the detuning $Δν$ between the microwave source frequency… ▽ More We investigate the dynamics of a strongly-driven, microwave-dressed, donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field $B_1$ is used to dress the electron spin and create a new quantum system with a level splitting proportional to $B_1$. The dressed two-level system can then be driven by modulating the detuning $Δν$ between the microwave source frequency $ν_{\rm MW}$ and the electron spin transition frequency $ν_e$ at the frequency of the level splitting. The resulting dressed qubit Rabi frequency $Ω_{Rρ}$ is defined by the modulation amplitude, which can be made comparable to the level splitting using frequency modulation on the microwave source. This allows us to investigate the regime where the rotating wave approximation breaks down, without requiring microwave power levels that would be incompatible with a cryogenic environment. We observe clear deviations from normal Rabi oscillations and can numerically simulate the time evolution of the states in excellent agreement with the experimental data. △ Less

Submitted 1 September, 2016; v1 submitted 7 June, 2016; originally announced June 2016.

Journal ref: Phys. Rev. B 94, 161302 (2016)

A Dressed Spin Qubit in Silicon

Authors: Arne Laucht, Rachpon Kalra, Stephanie Simmons, Juan P. Dehollain, Juha T. Muhonen, Fahd A. Mohiyaddin, Solomon Freer, Fay E. Hudson, Kohei M. Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, A. Morello

Abstract: Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed sp… ▽ More Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, by frequency modulating the driving field, or by a simple detuning pulse. We measure coherence times of $T_{2ρ}^*=2.4$ ms and $T_{2ρ}^{\rm Hahn}=9$ ms, one order of magnitude longer than those of the undressed qubit. Furthermore, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations. △ Less

Submitted 15 March, 2016; originally announced March 2016.