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Low-energy pathways lead to self-healing defects in CsPbBr$_3$
Authors:
Kumar Miskin,
Yi Cao,
Madaline Marland,
Jay Rwaka,
Farhan Shaikh,
David Moore,
John Marohn,
Paulette Clancy
Abstract:
Self-regulation of free charge carriers in perovskites via Schottky defect formation has been posited as the origin of the well-known defect tolerance of metal halide perovskite materials that are promising candidates for photovoltaic applications, like solar cells. Understanding the mechanisms of self-regulation, here for a representative of more commercially viable all-inorganic perovskites, pro…
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Self-regulation of free charge carriers in perovskites via Schottky defect formation has been posited as the origin of the well-known defect tolerance of metal halide perovskite materials that are promising candidates for photovoltaic applications, like solar cells. Understanding the mechanisms of self-regulation, here for a representative of more commercially viable all-inorganic perovskites, promises to lead to the fabrication of better-performing solar cell materials with higher efficiencies. We investigated different mechanisms and pathways of the diffusion and recombination of interstitials and vacancies (Schottky pairs) in CsPbBr$_3$. We use Nudged Elastic Band calculations and ab initio-derived pseudopotentials within Quantum ESPRESSO to determine energies of formation, migration, and activation for these defects. Our calculations uncover defect pathways capable of producing an activation energy at or below the value of 0.53~eV observed for the slow, temperature-dependent recovery of light-induced conductivity in CsPbBr$_3$. Our work reveals the existence of a low-energy diffusion pathway involving a concerted "domino effect" interstitial mechanism, with the net result that interstitials can diffuse more readily over long distances than expected. Importantly, this observation suggests that defect self-healing can be promoted if the "domino effect" strategy can be engaged.
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Submitted 21 May, 2024;
originally announced May 2024.
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Materials for High Temperature Digital Electronics
Authors:
Dhiren K. Pradhan,
David C. Moore,
A. Matt Francis,
Jacob Kupernik,
W. Joshua Kennedy,
Nicholas R. Glavin,
Roy H. Olsson III,
Deep Jariwala
Abstract:
Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and mainstream use, current silicon-based devices suffer significant reliability issues at temperatures exceeding 125 °C. The emergent technological frontiers of s…
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Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and mainstream use, current silicon-based devices suffer significant reliability issues at temperatures exceeding 125 °C. The emergent technological frontiers of space exploration, geothermal energy harvesting, nuclear energy, unmanned avionic systems, and autonomous driving will rely on control systems, sensors, and communication devices which operate at temperatures as high as 500 °C and beyond. At these extreme temperatures, active (heat exchanger, phase change cooling) or passive (fins and thermal interface materials) cooling strategies add significant mass and complication which is often infeasible. Thus, new material solutions beyond conventional silicon CMOS devices are necessary for high temperature, resilient electronic systems. Accomplishing this will require a united effort to explore development, integration, and ultimately manufacturing of non-silicon-based logic and memory technologies, non-traditional metals for interconnects, and ceramic packaging technology.
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Submitted 4 April, 2024;
originally announced April 2024.
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High throughput data-driven design of laser crystallized 2D MoS2 chemical sensors
Authors:
Drake Austin,
Paige Miesle,
Deanna Sessions,
Michael Motala,
David Moore,
Griffin Beyer,
Adam Miesle,
Andrew Sarangan,
Amritanand Sebastian,
Saptarshi Das,
Anand Puthirath,
Xiang Zhang,
Jordan Hachtel,
Pulickel Ajayan,
Tyson Back,
Peter Stevenson,
Michael Brothers,
Steven Kim,
Philip Buskohl,
Rahul Rao,
Christopher Muratore,
Nicholas Glavin
Abstract:
High throughput characterization and processing techniques are becoming increasingly necessary to navigate multivariable, data-driven design challenges for sensors and electronic devices. For two-dimensional materials, device performance is highly dependent upon a vast array of material properties including number of layers, lattice strain, carrier concentration, defect density, and grain structur…
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High throughput characterization and processing techniques are becoming increasingly necessary to navigate multivariable, data-driven design challenges for sensors and electronic devices. For two-dimensional materials, device performance is highly dependent upon a vast array of material properties including number of layers, lattice strain, carrier concentration, defect density, and grain structure. In this work, laser-crystallization was used to locally pattern and transform hundreds of regions of amorphous MoS2 thin films into 2D 2H-MoS2. A high throughput Raman spectroscopy approach was subsequently used to assess the process-dependent structural and compositional variations for each illuminated region, yielding over 5500 distinct non-resonant, resonant, and polarized Raman spectra. The rapid generation of a comprehensive library of structural and compositional data elucidated important trends between structure-property-processing relationships involving laser-crystallized MoS2, including the relationships between grain size, grain orientation, and intrinsic strain. Moreover, extensive analysis of structure/property relationships allowed for intelligent design, and evaluation of major contributions to, device performance in MoS2 chemical sensors. In particular, it is found that sensor performance is strongly dependent on the orientation of the MoS2 grains relative to the crystal plane.
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Submitted 26 January, 2022;
originally announced January 2022.
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Lattice QCD noise reduction for bosonic correlators through blocking
Authors:
Luis Altenkort,
Alexander M. Eller,
O. Kaczmarek,
Lukas Mazur,
Guy D. Moore,
H. -T. Shu
Abstract:
We propose a method to substantially improve the signal-to-noise ratio of lattice correlation functions for bosonic operators or other operator combinations with disconnected contributions. The technique is applicable for correlations between operators on two planes (zero momentum correlators) when the dimension of the plane is larger than the separation between the two planes which are correlated…
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We propose a method to substantially improve the signal-to-noise ratio of lattice correlation functions for bosonic operators or other operator combinations with disconnected contributions. The technique is applicable for correlations between operators on two planes (zero momentum correlators) when the dimension of the plane is larger than the separation between the two planes which are correlated. In this case, the correlation arises primarily from points whose in-plane coordinates are close, but noise arises from all pairs of points. By breaking each plane into bins and computing bin-bin correlations, it is possible to capture these short-distance correlators exactly while replacing (small) correlators at large spatial extent with a fit, with smaller uncertainty than the data. The cost is only marginally larger than averaging each plane before correlating, but the improvement in signal-to-noise can be substantial. We test the method on correlators of the gradient-flowed topological charge density and squared field strength, finding noise reductions by a factor of $\sim$ 3$-$7 compared to the conventional approach on the same ensemble of configurations.
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Submitted 20 May, 2022; v1 submitted 4 December, 2021;
originally announced December 2021.
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Scalable synthesis of 2D van der Waals superlattices
Authors:
Michael J. Motala,
Xiang Zhang,
Pawan Kumar,
Eliezer F. Oliveira,
Anna Benton,
Paige Miesle,
Rahul Rao,
Peter R. Stevenson,
David Moore,
Adam Alfieri,
Jason Lynch,
Guanhui Gao,
Sijie Ma,
Hanyu Zhu,
Zhe Wang,
Ivan Petrov,
Eric A. Stach,
W. Joshua Kennedy,
Shiva Vengala,
James M. Tour,
Douglas S. Galvao,
Deep Jariwala,
Christopher Muratore,
Michael Snure,
Pulickel M. Ajayan
, et al. (1 additional authors not shown)
Abstract:
Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with mate…
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Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with materials processing have limited material quality and impeded scalability. We demonstrate a method to convert sub-nanometer metal films deposited on silicon and sapphire into TMDC heterostructures through vapor-phase processing. The resulting heterostructures and superlattices exhibit novel properties compared with stand-alone TMDCs, including reduced bandgap, enhanced light-matter coupling, and improved catalytic performance. This robust and scalable synthetic method provides new opportunities to generate a wide range of artificially stacked 2D superlattices with controlled morphology and composition.
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Submitted 4 November, 2021;
originally announced November 2021.
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Pressure, temperature, and orientation dependent thermal conductivity of $α$-1,3,5-trinitro-1,3,5-triazinane ($α$-RDX)
Authors:
Romain Perriot,
Michael S. Powell,
John D. Lazarz,
C. A. Bolme,
Shawn D. McGrane,
David S. Moore,
M. J. Cawkwell,
Kyle J. Ramos
Abstract:
We use reverse non-equilibrium molecular dynamics (RNEMD) simulations to determine the thermal conductivity in $α$-RDX in the <100>, <010>, and <001> crystallographic directions. Simulations are carried out with the Smith-Bharadwaj non-reactive empirical interatomic potential [Smith & Bharadwaj, J. Phys. Chem. B 103, 3570(1999)], which represents the thermo-elastic properties of RDX with good accu…
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We use reverse non-equilibrium molecular dynamics (RNEMD) simulations to determine the thermal conductivity in $α$-RDX in the <100>, <010>, and <001> crystallographic directions. Simulations are carried out with the Smith-Bharadwaj non-reactive empirical interatomic potential [Smith & Bharadwaj, J. Phys. Chem. B 103, 3570(1999)], which represents the thermo-elastic properties of RDX with good accuracy. As an illustration, we report the temperature and pressure dependence of lattice constants of $α$-RDX, which compare well with experimental and ab initio results, as do linear and volume thermal expansion coefficients, which we also calculate. We find that the thermal conductivity depends linearly on the inverse temperature in the 200-400K regime due to the decrease in the phonon mean free path. The thermal conductivity also exhibits anisotropy, with a maximum difference at 300K of 24% between the <001> and <010> directions, an effect that remains when temperature increases. Thermal conductivity in the <100> direction is mostly between the two other directions, although crossovers are predicted with <001> at high temperature, and <010> at low temperature under pressure. We observe that the thermal conductivity varies linearly with pressure up to 4 GPa. The data are fitted to analytical functions for interpolation/extrapolation and use in continuum simulations. MD results are validated against experiments using impulsive stimulated thermal scattering (ISTS) on RDX single crystals at 293K and ambient pressure, showing good qualitative and quantitative agreement: same ordering between the three principal orientations, and an average error of 10% between the experiments and the model. These results provide confidence that the extracted analytical functions using the RNEMD methodology and the Smith-Bharadwaj potential can be applied to model the thermal conductivity of $α$-RDX.
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Submitted 22 March, 2021;
originally announced March 2021.
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Scaled demagnetization models: susceptibility, resonant and relaxation frequency prediction compared to magnetic composite measurements
Authors:
Dr. Rick L. Moore
Abstract:
Maxwell-Garnett Theory (MGT), Bruggeman Effective Medium Theory (BEMT), Coherent Model Approximation (CMA), Scaled Effective Medium Theory (ScEMT) and models of Schlomann (E. Schlomann, Phys. Rev. B, 182, 7, 632 (10 June 1969) and E. Schlomann, Conf. on Mag. and Mag. Materials, AIEE Spec. Publ. T-91, 600 (1956)) are applied to predict magnetic susceptibility, resonant and relaxation frequency in p…
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Maxwell-Garnett Theory (MGT), Bruggeman Effective Medium Theory (BEMT), Coherent Model Approximation (CMA), Scaled Effective Medium Theory (ScEMT) and models of Schlomann (E. Schlomann, Phys. Rev. B, 182, 7, 632 (10 June 1969) and E. Schlomann, Conf. on Mag. and Mag. Materials, AIEE Spec. Publ. T-91, 600 (1956)) are applied to predict magnetic susceptibility, resonant and relaxation frequency in polymer-magnetic particle composites. Particulates had aspect ratios near unity; bulk low frequency susceptibilities ranging from approximately 5 to 4000 and particle volume fractions between 1 and 100%. Previous publications demonstrated that ScEMT improved the prediction of DC susceptibility as compared to classical models. This paper first modifies BEMT and ScEMT for volume fractions below about 10%. A ScEMT based model of composite resonant frequency is presented and compared to MGT, CMA models and measurement. Model and measurement comparisons of resonant frequency are followed by model-measurement comparisons of relaxation frequency. CMA, MGT, models of Schlomann, and volumetric scaled modifications of Schlomann are tested in the relaxation frequency study. The paper emphasizes the broad application of the models and therefore composite data for a wide range of particulate chemistries are presented ScEMT predictions of susceptibility and resonant frequency continue to show reasonable agreement with measurement and represent improvement over the CMA and MGT models. ScEMT modifications to Schlomann show overall best agreement with relaxation frequency measurement. CMA and MGT are most accurate for modest susceptibility (~ < 100) while ScEMT modified Schlomann models are most accurate for large susceptibility.
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Submitted 1 August, 2019;
originally announced August 2019.
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Substrate-dependent Photoconductivity Dynamics in a High-efficiency Hybrid Perovskite Alloy
Authors:
Ali Moeed Tirmzi,
Jeffrey A. Christians,
Ryan P. Dwyer,
David T. Moore,
John A. Marohn
Abstract:
Films of (FA$_{0.79}$MA$_{0.16}$Cs$_{0.05}$)$_{0.97}$Pb(I$_{0.84}$Br$_{0.16}$)$_{2.97}$ were grown over TiO$_{2}$, SnO$_{2}$, ITO, and NiO. Film conductivity was interrogated by measuring the in-phase and out-of-phase forces acting between the film and a charged microcantilever. We followed the films' conductivity vs. time, frequency, light intensity, and temperature (233 to 312 K). Perovskite con…
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Films of (FA$_{0.79}$MA$_{0.16}$Cs$_{0.05}$)$_{0.97}$Pb(I$_{0.84}$Br$_{0.16}$)$_{2.97}$ were grown over TiO$_{2}$, SnO$_{2}$, ITO, and NiO. Film conductivity was interrogated by measuring the in-phase and out-of-phase forces acting between the film and a charged microcantilever. We followed the films' conductivity vs. time, frequency, light intensity, and temperature (233 to 312 K). Perovskite conductivity was high and light-independent over ITO and NiO. Over TiO$_{2}$ and SnO$_{2}$, the conductivity was low in the dark, increased with light intensity, and persisted for 10's of seconds after the light was removed. At elevated temperature over TiO$_{2}$, the rate of conductivity recovery in the dark showed an activated temperature dependence (E$_{a}$ = 0.58 eV). Surprisingly, the light-induced conductivity over TiO$_{2}$ and SnO$_{2}$ relaxed essentially instantaneously at low temperature. We use a transmission-line model for mixed ionic-electronic conductors to show that the measurements presented are sensitive to the sum of electronic and ionic conductivities. We rationalize the seemingly incongruous observations using the idea that holes, introduced either by equilibration with the substrate or via optical irradiation, create iodide vacancies.
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Submitted 16 January, 2019; v1 submitted 5 December, 2018;
originally announced December 2018.
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Single-beam dielectric-microsphere trap** with optical heterodyne detection
Authors:
Alexander D. Rider,
Charles P. Blakemore,
Giorgio Gratta,
David C. Moore
Abstract:
A technique to levitate and measure the three-dimensional position of micrometer-sized dielectric spheres with heterodyne detection is presented. The two radial degrees of freedom are measured by interfering light transmitted through the microsphere with a reference wavefront, while the axial degree of freedom is measured from the phase of the light reflected from the surface of the microsphere. T…
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A technique to levitate and measure the three-dimensional position of micrometer-sized dielectric spheres with heterodyne detection is presented. The two radial degrees of freedom are measured by interfering light transmitted through the microsphere with a reference wavefront, while the axial degree of freedom is measured from the phase of the light reflected from the surface of the microsphere. This method pairs the simplicity and accessibility of single beam optical traps to a measurement of displacement that is intrinsically calibrated by the wavelength of the trap** light and has exceptional immunity to stray light. A theoretical shot noise limit of $1.3\times10^{-13}\,\text{m}/\sqrt{\text{Hz}}$ for the radial degrees of freedom, and $3.0\times10^{-15} \, \text{m}/\sqrt{\text{Hz}}$ for the axial degree of freedom can be obtained in the system described. The measured acceleration noise in the radial direction is $7.5\times10^{-5} \, (\text{m/s}^2)/\sqrt{\text{Hz}}$.
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Submitted 5 February, 2018; v1 submitted 6 October, 2017;
originally announced October 2017.
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Characterization of Three-Dimensional Microstructures in Single Crystal Diamond
Authors:
P. Olivero,
S. Rubanov,
P. Reichart,
B. C. Gibson,
S. T. Huntington,
J. R. Rabeau,
A. D. Greentree,
J. Salzman,
D. Moore,
D. N. Jamieson,
S. Prawer
Abstract:
We report on the Raman and photoluminescence characterization of three-dimensional microstructures created in single crystal diamond with a Focused Ion Beam (FIB) assisted lift-off technique. The method is based on MeV ion implantation to create a buried etchable layer, followed by FIB patterning and selective etching. In the applications of such microstructures where the properties of high qualit…
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We report on the Raman and photoluminescence characterization of three-dimensional microstructures created in single crystal diamond with a Focused Ion Beam (FIB) assisted lift-off technique. The method is based on MeV ion implantation to create a buried etchable layer, followed by FIB patterning and selective etching. In the applications of such microstructures where the properties of high quality single crystal diamond are most relevant, residual damage after the fabrication process represents a critical technological issue. The results of Raman and photoluminescence characterization indicate that the partial distortion of the sp3-bonded lattice and the formation of isolated point defects are effectively removed after thermal annealing, leaving low amounts of residual damage in the final structures. Three-dimensional microstructures in single-crystal diamond offer a large range of applications, such as quantum optics devices and fully integrated opto mechanical assemblies.
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Submitted 1 September, 2016;
originally announced September 2016.
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Vibrational Signatures in the THz Spectrum of 1,3-DNB: A First-Principles and Experimental Study
Authors:
Towfiq Ahmed,
Abul K. Azad,
Raja Chellappa,
Amanda Higginbotham-Duque,
Dana M. Dattelbaum,
Jian-Xin Zhu,
David Moore,
Matthias J. Graf
Abstract:
Understanding the fundamental processes of light-matter interaction is important for detection of explosives and other energetic materials, which are active in the infrared and terahertz (THz) region. We report a comprehensive study on electronic and vibrational lattice properties of structurally similar 1,3-dinitrobenzene (1,3- DNB) crystals through first-principles electronic structure calculati…
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Understanding the fundamental processes of light-matter interaction is important for detection of explosives and other energetic materials, which are active in the infrared and terahertz (THz) region. We report a comprehensive study on electronic and vibrational lattice properties of structurally similar 1,3-dinitrobenzene (1,3- DNB) crystals through first-principles electronic structure calculations and THz spectroscopy measurements on polycrystalline samples. Starting from reported x-ray crystal structures, we use density-functional theory (DFT) with periodic boundary conditions to optimize the structures and perform linear response calculations of the vibrational properties at zero phonon momentum. The theoretically identified normal modes agree qualitatively with those obtained experimentally in a frequency range up to 2.5 THz and quantitatively at much higher frequencies. The latter frequencies are set by intra-molecular forces. Our results suggest that van der Waals dispersion forces need to be included to improve the agreement between theory and experiment in the THz region, which is dominated by intermolecular modes and sensitive to details in the DFT calculation. An improved comparison is needed to assess and distinguish between intra- and intermolecular vibrational modes characteristic of energetic materials.
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Submitted 11 January, 2016;
originally announced January 2016.
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Microscale electromagnetic heating in heterogeneous energetic materials based on X-ray CT imaging
Authors:
W. J. M. Kort-Kamp,
N. L. Cordes,
A. Ionita,
B. B. Glover,
A. L. Higginbotham Duque,
W. L. Perry,
B. M. Patterson,
D. A. R. Dalvit,
D. S. Moore
Abstract:
Electromagnetic stimulation of energetic materials provides a noninvasive and nondestructive tool for detecting and identifying explosives. We combine structural information based on X-ray computed tomography, experimental dielectric data, and electromagnetic full-wave simulations, to study microscale electromagnetic heating of realistic three-dimensional heterogeneous explosives. We analyze the f…
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Electromagnetic stimulation of energetic materials provides a noninvasive and nondestructive tool for detecting and identifying explosives. We combine structural information based on X-ray computed tomography, experimental dielectric data, and electromagnetic full-wave simulations, to study microscale electromagnetic heating of realistic three-dimensional heterogeneous explosives. We analyze the formation of electromagnetic hot spots and thermal gradients in the explosive-binder meso-structures, and compare the heating rate for various binder systems.
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Submitted 4 December, 2015;
originally announced December 2015.
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Search for Millicharged Particles Using Optically Levitated Microspheres
Authors:
David C. Moore,
Alexander D. Rider,
Giorgio Gratta
Abstract:
We report results from a search for stable particles with charge > $10^{-5}$ e in bulk matter using levitated dielectric microspheres in high vacuum. No evidence for such particles was found in a total sample of 1.4 ng, providing an upper limit on the abundance per nucleon of 2.5 x $10^{-14}$ at the 95% confidence level for the material tested. These results provide the first direct search for sin…
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We report results from a search for stable particles with charge > $10^{-5}$ e in bulk matter using levitated dielectric microspheres in high vacuum. No evidence for such particles was found in a total sample of 1.4 ng, providing an upper limit on the abundance per nucleon of 2.5 x $10^{-14}$ at the 95% confidence level for the material tested. These results provide the first direct search for single particles with charge < 0.1 e bound in macroscopic quantities of matter and demonstrate the ability to perform sensitive force measurements using optically levitated microspheres in vacuum.
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Submitted 16 December, 2014; v1 submitted 19 August, 2014;
originally announced August 2014.
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Position and energy-resolved particle detection using phonon-mediated microwave kinetic inductance detectors
Authors:
D. C. Moore,
S. R. Golwala,
B. Bumble,
B. Cornell,
P. K. Day,
H. G. LeDuc,
J. Zmuidzinas
Abstract:
We demonstrate position and energy-resolved phonon-mediated detection of particle interactions in a silicon substrate instrumented with an array of microwave kinetic inductance detectors (MKIDs). The relative magnitude and delay of the signal received in each sensor allows the location of the interaction to be determined with < 1 mm precision at 30 keV. Using this position information, variations…
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We demonstrate position and energy-resolved phonon-mediated detection of particle interactions in a silicon substrate instrumented with an array of microwave kinetic inductance detectors (MKIDs). The relative magnitude and delay of the signal received in each sensor allows the location of the interaction to be determined with < 1 mm precision at 30 keV. Using this position information, variations in the detector response with position can be removed, and an energy resolution of σ_E = 0.55 keV at 30 keV was measured. Since MKIDs can be fabricated from a single deposited film and are naturally multiplexed in the frequency domain, this technology can be extended to provide highly-pixelized athermal phonon sensors for ~1 kg scale detector elements. Such high-resolution, massive particle detectors would be applicable to next-generation rare-event searches such as the direct detection of dark matter, neutrinoless double-beta decay, or coherent neutrino-nucleus scattering.
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Submitted 10 June, 2012; v1 submitted 20 March, 2012;
originally announced March 2012.
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ARCONS: A highly multiplexed superconducting optical to near-IR camera
Authors:
Benjamin A. Mazin,
Kieran O'Brien,
Sean McHugh,
Bruce Bumble,
David Moore,
Sunil Golwala,
Jonas Zmuidzinas
Abstract:
We report on the development of ARCONS, the ARray Camera for Optical to Near-IR Spectrophotometry. This photon counting integral field unit (IFU), being built at UCSB and Caltech with detectors fabricated at JPL, will use a unique, highly multiplexed low temperature detector technology known as Microwave Kinetic Inductance Detectors (MKIDs). These detectors, which operate at 100 mK, should provide…
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We report on the development of ARCONS, the ARray Camera for Optical to Near-IR Spectrophotometry. This photon counting integral field unit (IFU), being built at UCSB and Caltech with detectors fabricated at JPL, will use a unique, highly multiplexed low temperature detector technology known as Microwave Kinetic Inductance Detectors (MKIDs). These detectors, which operate at 100 mK, should provide photon counting with energy resolution of R = E/δE > 20 and time resolution of a microsecond, with a quantum efficiency of around 50%. We expect to field the instrument at the Palomar 200" telescope in the first quarter of 2011 with an array containing 1024 pixels in a 32x32 pixel form factor to yield a field of view of approximately 10x10 arcseconds. The bandwidth of the camera is limited by the rising sky count rate at longer wavelengths, but we anticipate a bandwidth of 0.35 to 1.35 μm will be achievable. A simple optical path and compact dewar utilizing a cryogen-free adiabatic demagnetization refridgerator (ADR) allows the camera to be deployed quickly at Naysmith or Coude foci at a variety of telescopes. A highly expandable software defined radio (SDR) readout that can scale up to much larger arrays has been developed.
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Submitted 5 July, 2010;
originally announced July 2010.
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Titanium Nitride Films for Ultrasensitive Microresonator Detectors
Authors:
Henry G. Leduc,
Bruce Bumble,
Peter K. Day,
Anthony D. Turner,
Byeong Ho Eom,
Sunil Golwala,
David C. Moore,
Omid Noroozian,
Jonas Zmuidzinas,
Jiansong Gao,
Benjamin A. Mazin,
Sean McHugh,
Andrew Merrill
Abstract:
Titanium nitride (TiNx) films are ideal for use in superconducting microresonator detectors because: a) the critical temperature varies with composition (0 < Tc < 5 K); b) the normal-state resistivity is large, ρ_n ~ 100 $μ$Ohm cm, facilitating efficient photon absorption and providing a large kinetic inductance and detector responsivity; and c) TiN films are very hard and mechanically robust. Res…
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Titanium nitride (TiNx) films are ideal for use in superconducting microresonator detectors because: a) the critical temperature varies with composition (0 < Tc < 5 K); b) the normal-state resistivity is large, ρ_n ~ 100 $μ$Ohm cm, facilitating efficient photon absorption and providing a large kinetic inductance and detector responsivity; and c) TiN films are very hard and mechanically robust. Resonators using reactively sputtered TiN films show remarkably low loss (Q_i > 10^7) and have noise properties similar to resonators made using other materials, while the quasiparticle lifetimes are reasonably long, 10-200 $μ$s. TiN microresonators should therefore reach sensitivities well below 10^-19 WHz^(-1/2).
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Submitted 9 August, 2010; v1 submitted 29 March, 2010;
originally announced March 2010.
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Thin film dielectric microstrip kinetic inductance detectors
Authors:
B. A. Mazin,
D. Sank,
S. McHugh,
E. A. Lucero,
A. Merrill,
J. Gao,
D. Pappas,
D. Moore,
J. Zmuidzinas
Abstract:
Microwave Kinetic Inductance Detectors, or MKIDs, are a type of low temperature detector that exhibit intrinsic frequency domain multiplexing at microwave frequencies. We present the first theory and measurements on a MKID based on a microstrip transmission line resonator. A complete characterization of the dielectric loss and noise properties of these resonators is performed, and agrees well wi…
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Microwave Kinetic Inductance Detectors, or MKIDs, are a type of low temperature detector that exhibit intrinsic frequency domain multiplexing at microwave frequencies. We present the first theory and measurements on a MKID based on a microstrip transmission line resonator. A complete characterization of the dielectric loss and noise properties of these resonators is performed, and agrees well with the derived theory. A competitive noise equivalent power of 5$\times10^{-17}$ W Hz$^{-1/2}$ at 1 Hz has been demonstrated. The resonators exhibit the highest quality factors known in a microstrip resonator with a deposited thin film dielectric.
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Submitted 1 February, 2010;
originally announced February 2010.
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Evidence for Nodal superconductivity in Sr$_{2}$ScFePO$_{3}$
Authors:
K. A. Yates,
I. T. M. Usman,
K. Morrison,
J. D. Moore,
A. M. Gilbertson,
A. D. Caplin,
L. F. Cohen,
H. Ogino,
J. Shimoyama
Abstract:
Point contact Andreev reflection spectra have been taken as a function of temperature and magnetic field on the polycrystalline form of the newly discovered iron-based superconductor Sr2ScFePO3. A zero bias conductance peak which disappears at the superconducting transition temperature, dominates all of the spectra. Data taken in high magnetic fields show that this feature survives until 7T at 2…
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Point contact Andreev reflection spectra have been taken as a function of temperature and magnetic field on the polycrystalline form of the newly discovered iron-based superconductor Sr2ScFePO3. A zero bias conductance peak which disappears at the superconducting transition temperature, dominates all of the spectra. Data taken in high magnetic fields show that this feature survives until 7T at 2K and a flattening of the feature is observed in some contacts. Here we inspect whether these observations can be interpreted within a d-wave, or nodal order parameter framework which would be consistent with the recent theoretical model where the height of the P in the Fe-P-Fe plane is key to the symmetry of the superconductivity. However, in polycrystalline samples care must be taken when examining Andreev spectra to eliminate or take into account artefacts associated with the possible effects of Josephson junctions and random alignment of grains.
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Submitted 11 December, 2009; v1 submitted 20 August, 2009;
originally announced August 2009.
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Effect of columnar defects on the pinning properties of NdFeAsO0.85 conglomerate particles
Authors:
J. D. Moore,
L. F. Cohen,
Y. Yeshurun,
A. D. Caplin,
K. Morrison,
K. A. Yates,
C. M. McGilvery,
J. M. Perkins,
D. W. McComb,
C. Trautmann,
Z. A. Ren,
J. Yang,
W. Lu,
X. L. Dong,
Z. X. Zhao
Abstract:
Oxypnictide superconductor NdFeAsO0.85 sample was irradiated with 2 GeV Ta ions at a fluence of 5x10^10 ions/cm2. High resolution transmission electron microscopy study revealed that the irradiation produced columnar-like defects. The effect of these defects on the irreversible magnetisation in polycrystalline randomly oriented fragments was studied as a function of field angle and field sweep r…
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Oxypnictide superconductor NdFeAsO0.85 sample was irradiated with 2 GeV Ta ions at a fluence of 5x10^10 ions/cm2. High resolution transmission electron microscopy study revealed that the irradiation produced columnar-like defects. The effect of these defects on the irreversible magnetisation in polycrystalline randomly oriented fragments was studied as a function of field angle and field sweep rate. We find that the critical current density is enhanced at fields below the matching field (~1 Tesla) but only marginally. The pinning enhancement is anisotropic and maximum along the defect direction at high temperatures but the pinning then becomes more isotropic at low temperatures. The creep rate is suppressed at high temperatures and at fields below the matching field, indicating the columnar defects are efficient pinning sites at these H and T conditions.
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Submitted 1 July, 2009;
originally announced July 2009.
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Evidence for Supercurrent Connectivity in Conglomerate Particles in NdFeAsO1-d
Authors:
J D Moore,
K Morrison,
K A Yates,
A D Caplin,
Y Yeshurun,
L F Cohen,
J M Perkins,
C M McGilvery,
D W McComb,
Z A Ren,
J Yang,
W Lu,
X L Dong,
Z X Zhao
Abstract:
Here we use global and local magnetometry and Hall probe imaging to investigate the electromagnetic connectivity of the superconducting current path in the oxygen-deficient fluorine-free Nd-based oxypnictides. High resolution transmission electron microscopy and scanning electron microscopy show strongly-layered crystallites, evidence for a ~ 5nm amorphous oxide around individual particles, and…
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Here we use global and local magnetometry and Hall probe imaging to investigate the electromagnetic connectivity of the superconducting current path in the oxygen-deficient fluorine-free Nd-based oxypnictides. High resolution transmission electron microscopy and scanning electron microscopy show strongly-layered crystallites, evidence for a ~ 5nm amorphous oxide around individual particles, and second phase neodymium oxide which may be responsible for the large paramagnetic background at high field and at high temperatures.
From global magnetometry and electrical transport measurements it is clear that there is a small supercurrent flowing on macroscopic sample dimensions (mm), with a lower bound for the average (over this length scale) critical current density of the order of 103 A/cm2. From magnetometry of powder samples and local Hall probe imaging of a single large conglomerate particle ~120 microns it is clear that on smaller scales, there is better current connectivity with a critical current density of the order of 5 x 104 A/cm2. We find enhanced flux creep around the second peak anomaly in the magnetisation curve and an irreversibility line significantly below Hc2(T) as determined by ac calorimetry.
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Submitted 4 June, 2008;
originally announced June 2008.
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Angle-resolved photoemission study of USb2: the 5f band structure
Authors:
E. Guziewicz,
T. Durakiewicz,
M. T. Butterfield,
C. G. Olson,
J. J. Joyce,
A. J. Arko,
J. L. Sarrao,
D. P. Moore,
L. Morales
Abstract:
Single crystal antiferromagnetic USb2 was studied at 15K by angle-resolved photoemission with an overall energy resolution of 24 meV. The measurements unambiguously show the dispersion of extremely narrow bands situated near the Fermi level. The peak at the Fermi level represents the narrowest feature observed in 5f-electron photoemission to date. The natural linewidth of the feature just below…
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Single crystal antiferromagnetic USb2 was studied at 15K by angle-resolved photoemission with an overall energy resolution of 24 meV. The measurements unambiguously show the dispersion of extremely narrow bands situated near the Fermi level. The peak at the Fermi level represents the narrowest feature observed in 5f-electron photoemission to date. The natural linewidth of the feature just below the Fermi level is not greater than 10 meV. Normal emission data indicate a three dimensional aspect to the electronic structure of this layered material.
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Submitted 30 September, 2003;
originally announced October 2003.
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On The Nature of the 5f States in Delta Plutonium
Authors:
J. M. Wills,
O. Eriksson,
A. Delin,
P. H. Andersson,
J. J. Joyce,
T. Durakiewicz,
M. T. Butterfield,
L. A. Morales,
D. P. Moore,
A. J. Arko
Abstract:
We present a theoretical model of the electronic structure of delta-Pu that is consistent with many of the electronic structure related properties of this complex metal. In particular we show that the theory is capable of reproducing the valence band photoelectron spectrum of delta-Pu. We report new experimental photoelectron spectra at several photon energies and present evidence that the elect…
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We present a theoretical model of the electronic structure of delta-Pu that is consistent with many of the electronic structure related properties of this complex metal. In particular we show that the theory is capable of reproducing the valence band photoelectron spectrum of delta-Pu. We report new experimental photoelectron spectra at several photon energies and present evidence that the electronic structure of delta-Pu is unique among the elements, involving a 5f shell with four 5f electrons in a localized multiplet, hybridizing with valence states, and approximately one 5f electron forming a completely delocalized band state.
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Submitted 31 July, 2003;
originally announced July 2003.
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Josephson effects in MgB2 meta masked ion damage junctions
Authors:
D. -J. Kang,
N. H. Peng,
R. Webb,
C. Jeynes,
J. H. Yun,
S. H. Moon,
D. Oh,
G. Burnell,
E. J. Tarte,
D. F. Moore,
M. G. Blamire
Abstract:
Ion beam damage combined with nanoscale focused ion beam direct milling was used to create manufacturable SNS type Josephson junctions in 100 nm thick MgB$_{2}$ with T$_{C}$ of 38 K. The junctions show non-hysteretic current - voltage characteristics between 36 and 4.2 K. Experimental evidence for the dc and ac Josephson effects in MgB$_{2}$ metal masked ion damage junctions are presented. This…
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Ion beam damage combined with nanoscale focused ion beam direct milling was used to create manufacturable SNS type Josephson junctions in 100 nm thick MgB$_{2}$ with T$_{C}$ of 38 K. The junctions show non-hysteretic current - voltage characteristics between 36 and 4.2 K. Experimental evidence for the dc and ac Josephson effects in MgB$_{2}$ metal masked ion damage junctions are presented. This technique is particularly useful for prototy** devices due to its simplicity and flexibility of fabrication and has a great potential for high-density integration.
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Submitted 12 June, 2002;
originally announced June 2002.
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T_c for homogeneous dilute Bose gases: a second-order result
Authors:
Peter Arnold,
Guy D. Moore,
Boris Tomasik
Abstract:
The transition temperature for a dilute, homogeneous, three-dimensional Bose gas has the expansion T_c = T_0 {1 + c_1 a n^(1/3) + [c_2' ln(a n^(1/3)) + c_2''] a^2 n^(2/3) + O(a^3 n)}, where a is the scattering length, n the number density, and T_0 the ideal gas result. The first-order coefficient c_1 depends on non-perturbative physics. In this paper, we show that the coefficient c_2' can be com…
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The transition temperature for a dilute, homogeneous, three-dimensional Bose gas has the expansion T_c = T_0 {1 + c_1 a n^(1/3) + [c_2' ln(a n^(1/3)) + c_2''] a^2 n^(2/3) + O(a^3 n)}, where a is the scattering length, n the number density, and T_0 the ideal gas result. The first-order coefficient c_1 depends on non-perturbative physics. In this paper, we show that the coefficient c_2' can be computed perturbatively. We also show that the remaining second-order coefficient c_2'' depends on non-perturbative physics but can be related, by a perturbative calculation, to quantities that have previously been measured using lattice simulations of three-dimensional O(2) scalar field theory. Making use of those simulation results, we find T_c = T_0 {1 + (1.32+-0.02) a n^(1/3) + [19.7518 ln(a n^(1/3)) + (75.7+-0.4)] a^2 n^(2/3) + O(a^3 n)}.
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Submitted 6 July, 2001; v1 submitted 5 July, 2001;
originally announced July 2001.
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Non-perturbative computation of the bubble nucleation rate in the cubic anisotropy model
Authors:
Guy D. Moore,
Kari Rummukainen,
Anders Tranberg
Abstract:
At first order phase transitions the transition proceeds through droplet nucleation and growth. We discuss a lattice method for calculating the droplet nucleation rate, including the complete dynamical factors. The method is especially suitable for very strongly suppressed droplet nucleation, which is often the case in physically interesting transitions. We apply the method to the 3-dimensional…
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At first order phase transitions the transition proceeds through droplet nucleation and growth. We discuss a lattice method for calculating the droplet nucleation rate, including the complete dynamical factors. The method is especially suitable for very strongly suppressed droplet nucleation, which is often the case in physically interesting transitions. We apply the method to the 3-dimensional cubic anisotropy model in a parameter range where the model has a radiatively induced strong first order phase transition, and compare the results with analytical approaches.
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Submitted 29 March, 2001;
originally announced March 2001.
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Transition temperature of a dilute homogeneous imperfect Bose gas
Authors:
Peter Arnold,
Guy D. Moore
Abstract:
The leading-order effect of interactions on a homogeneous Bose gas is theoretically predicted to shift the critical temperature by an amount Δ\Tc = # a_{scatt} n^{1/3} T_0 from the ideal gas result T_0, where a_{scatt} is the scattering length and n is the density. There have been several different theoretical estimates for the numerical coefficient #. We claim to settle the issue by measuring t…
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The leading-order effect of interactions on a homogeneous Bose gas is theoretically predicted to shift the critical temperature by an amount Δ\Tc = # a_{scatt} n^{1/3} T_0 from the ideal gas result T_0, where a_{scatt} is the scattering length and n is the density. There have been several different theoretical estimates for the numerical coefficient #. We claim to settle the issue by measuring the numerical coefficient in a lattice simulation of O(2) phi^4 field theory in three dimensions---an effective theory which, as observed previously in the literature, can be systematically matched to the dilute Bose gas problem to reproduce non-universal quantities such as the critical temperature. We find # = 1.32 +- 0.02.
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Submitted 29 June, 2001; v1 submitted 9 March, 2001;
originally announced March 2001.
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Monte Carlo simulation of O(2) phi^4 field theory in three dimensions
Authors:
Peter Arnold,
Guy D. Moore
Abstract:
Using standard numerical Monte Carlo lattice methods, we study non-universal properties of the phase transition of three-dimensional phi^4 theory of a 2-component real field phi = (phi_1,phi_2) with O(2) symmetry. Specifically, we extract the renormalized values of <phi^2>/u and r/u^2 at the phase transition, where the continuum action of the theory is \int d^3x [ (1/2) |\gradφ|^2 + \half r φ^2…
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Using standard numerical Monte Carlo lattice methods, we study non-universal properties of the phase transition of three-dimensional phi^4 theory of a 2-component real field phi = (phi_1,phi_2) with O(2) symmetry. Specifically, we extract the renormalized values of <phi^2>/u and r/u^2 at the phase transition, where the continuum action of the theory is \int d^3x [ (1/2) |\gradφ|^2 + \half r φ^2 + {u\over4!} φ^4 ]. These values have applications to calculating the phase transition temperature of dilute or weakly-interacting Bose gases (both relativistic and non-relativistic). In passing, we also provide perturbative calculations of various O(a) lattice-spacing errors in three-dimensional O(N) scalar field theory, where (a) is the lattice spacing.
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Submitted 24 July, 2003; v1 submitted 9 March, 2001;
originally announced March 2001.
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Area and perimeter distribution of a surface in two dimensions
Authors:
E. D. Moore
Abstract:
We consider the number of configurations of a surface in two dimensions that has a prescribed length and encloses a prescribed perimeter with respect to a baseline. An approximate analytical treatment in a semi--continuum compares favourably with results from an exact algorithm for the discrete lattice. This work is relevant for finding the entropy associated with macroscopic configurations of s…
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We consider the number of configurations of a surface in two dimensions that has a prescribed length and encloses a prescribed perimeter with respect to a baseline. An approximate analytical treatment in a semi--continuum compares favourably with results from an exact algorithm for the discrete lattice. This work is relevant for finding the entropy associated with macroscopic configurations of such systems as domain growth problems, evaporation--deposition problems, membrane physics, or polymer physics.
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Submitted 18 May, 1995; v1 submitted 15 May, 1995;
originally announced May 1995.
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Scaling treatment of the random field Ising model
Authors:
R. B. Stinchcombe,
E. D. Moore,
S. L. A. de Queiroz
Abstract:
Analytic phenomenological scaling is carried out for the random field Ising model in general dimensions using a bar geometry. Domain wall configurations and their decorated profiles and associated wandering and other exponents $(ζ,γ,δ,μ)$ are obtained by free energy minimization. Scaling between different bar widths provides the renormalization group (RG) transformation. Its consequences are (1)…
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Analytic phenomenological scaling is carried out for the random field Ising model in general dimensions using a bar geometry. Domain wall configurations and their decorated profiles and associated wandering and other exponents $(ζ,γ,δ,μ)$ are obtained by free energy minimization. Scaling between different bar widths provides the renormalization group (RG) transformation. Its consequences are (1) criticality at $h=T=0$ in $d \leq 2$ with correlation length $ξ(h,T)$ diverging like $ξ(h,0) \propto h^{-2/(2-d)}$ for $d<2$ and $ξ(h,0) \propto \exp[1/(c_1γh^γ)]$ for $d=2$, where $c_1$ is a decoration constant; (2) criticality in $d = 2+ε$ dimensions at $T=0$, $h^{\ast}= (ε/2c_1)^{1/γ}$, where $ξ\propto [(s-s^{\ast})/s]^{-2ε/γ}$, $s \equiv h^γ$. Finite temperature generalizations are outlined. Numerical transfer matrix calculations and results from a ground state algorithm adapted for strips in $d=2$ confirm the ingredients which provide the RG description.
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Submitted 12 May, 1995;
originally announced May 1995.
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Domain scaling and marginality breaking in the random field Ising model
Authors:
E. D. Moore,
R. B. Stinchcombe,
S. L. A. de Queiroz
Abstract:
A scaling description is obtained for the $d$--dimensional random field Ising model from domains in a bar geometry. Wall roughening removes the marginality of the $d=2$ case, giving the $T=0$ correlation length $ξ\sim \exp\left(A h^{-γ}\right)$ in $d=2$, and for $d=2+ε$ power law behaviour with $ν= 2/εγ$, $h^\star \sim ε^{1/γ}$. Here, $γ= 2,4/3$ (lattice, continuum) is one of four rough wall exp…
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A scaling description is obtained for the $d$--dimensional random field Ising model from domains in a bar geometry. Wall roughening removes the marginality of the $d=2$ case, giving the $T=0$ correlation length $ξ\sim \exp\left(A h^{-γ}\right)$ in $d=2$, and for $d=2+ε$ power law behaviour with $ν= 2/εγ$, $h^\star \sim ε^{1/γ}$. Here, $γ= 2,4/3$ (lattice, continuum) is one of four rough wall exponents provided by the theory. The analysis is substantiated by three different numerical techniques (transfer matrix, Monte Carlo, ground state algorithm). These provide for strips up to width $L=11$ basic ingredients of the theory, namely free energy, domain size, and roughening data and exponents.
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Submitted 12 May, 1995;
originally announced May 1995.
