Showing 1–50 of 63 results for author: Moodera, J S

Highly Efficient Superconducting Diodes and Rectifiers for Quantum Circuitry

Authors: Josep Ingla-Aynés, Yasen Hou, Sarah Wang, En-De Chu, Oleg A. Mukhanov, Peng Wei, Jagadeesh S. Moodera

Abstract: Superconducting electronics is essential for energy-efficient quantum and classical high-end computing applications. Towards this goal, non-reciprocal superconducting circuit elements, such as superconducting diodes (SDs) can fulfill many critical needs. SDs have been the subject of multiple studies, but integrating several SDs in a superconducting circuit remains a challenge. Here we implement th… ▽ More Superconducting electronics is essential for energy-efficient quantum and classical high-end computing applications. Towards this goal, non-reciprocal superconducting circuit elements, such as superconducting diodes (SDs) can fulfill many critical needs. SDs have been the subject of multiple studies, but integrating several SDs in a superconducting circuit remains a challenge. Here we implement the first SD bridge with multiple SDs exhibiting reproducible characteristics operating at temperatures of a few Kelvin. We demonstrate its functionality as a full wave rectifier using elemental superconductors and insulating ferromagnets, with efficiency up to 43%, and ac to dc signal conversion capabilities at frequencies up to 40 kHz. Our results show a pathway with a highly scalable thin film platform for nonreciprocal superconducting circuits. They could significantly reduce energy consumption as well as decohering thermal and electromagnetic noise in quantum computing. △ Less

Submitted 21 June, 2024; v1 submitted 17 June, 2024; originally announced June 2024.

Comments: 6 pages, 3 figures

Nonreciprocity of supercurrent along applied magnetic field

Authors: Filippo Gaggioli, Yasen Hou, Jagadeesh S. Moodera, Akashdeep Kamra

Abstract: Nonreciprocal current responses arise in a broad range of systems, from magnons and phonons to supercurrents, due to an interplay between spatial and temporal symmetry breakings. These find applications in devices, such as circulators and rectifiers, as well as in probing the interactions and states that underlie the nonreciprocity. An established symmetry argument anticipates emergence of nonreci… ▽ More Nonreciprocal current responses arise in a broad range of systems, from magnons and phonons to supercurrents, due to an interplay between spatial and temporal symmetry breakings. These find applications in devices, such as circulators and rectifiers, as well as in probing the interactions and states that underlie the nonreciprocity. An established symmetry argument anticipates emergence of nonreciprocal currents along a direction perpendicular to the applied magnetic field that breaks the time-reversal symmetry. Here, motivated by recent experiments, we examine the emergence of nonreciprocity in vortex-limited superconducting critical currents along an applied magnetic field. Employing London's equations for describing the Meissner response of a superconducting film, we find that an additional symmetry breaking due to a preferred vortex axis enables nonreciprocal critical currents along the applied magnetic field, consistent with the so far unexplained experimental observation. Building on our concrete theoretical model for supercurrents, we discuss a possible generalization of the prevailing symmetry consideration to encompass nonreciprocal currents along the time-reversal symmetry breaking direction. △ Less

Submitted 8 May, 2024; originally announced May 2024.

Enhanced Ferromagnetism in Monolayer Cr2Te3 via Topological Insulator Coupling

Authors: Yunbo Ou, Murod Mirzhalilov, Norbert M. Nemes, Jose L. Martinez, Mirko Rocci, Austin Akey, Wenbo Ge, Dhavala Suri, Yi** Wang, Haile Ambaye, Jong Keum, Mohit Randeria, Nandini Trivedi, Kenneth S. Burch, David C. Bell, Weida Wu, Don Heiman, Valeria Lauter, Jagadeesh S. Moodera, Hang Chi

Abstract: Exchange-coupled interfaces are pivotal in exploiting two-dimensional (2D) ferromagnetism. Due to the extraordinary correlations among charge, spin, orbital and lattice degrees of freedom, layered magnetic transition metal chalcogenides (TMCs) bode well for exotic topological phenomena. Here we report the realization of wafer-scale Cr2Te3 down to monolayer (ML) on insulating SrTiO3(111) substrates… ▽ More Exchange-coupled interfaces are pivotal in exploiting two-dimensional (2D) ferromagnetism. Due to the extraordinary correlations among charge, spin, orbital and lattice degrees of freedom, layered magnetic transition metal chalcogenides (TMCs) bode well for exotic topological phenomena. Here we report the realization of wafer-scale Cr2Te3 down to monolayer (ML) on insulating SrTiO3(111) substrates using molecular beam epitaxy. Robust ferromagnetism emerges in 2D Cr2Te3 ML with a Curie temperature TC = 17 K. Moreover, when Cr2Te3 is proximitized with topological insulator (TI) (Bi,Sb)2Te3, the magnetism becomes stronger -- for 1 ML, TC increases to 30 K, while for 2 ML it boosts from 65 K to 82 K. Our experiments and theory strongly indicate that the Bloembergen-Rowland interaction is likely a universal aspect of TC enhancement in TI-coupled magnetic heterostructures. The topological-surface-enhanced magnetism in 2D TMC enables further exchange coupling physics and quantum hybrid studies, including paving the way to realize interface-modulated topological electronics. △ Less

Submitted 22 December, 2023; originally announced December 2023.

Comments: Main: 9 pages, 5 figures; SI: 3 pages, 5 figures

Spin Splitting Tunable Optical Bandgap in GdN Thin Films for Spin Filtering

Authors: G. L. S. Vilela, G. M. Stephen, X. Gratens, G. D. Galgano, Yasen Hou, Y. Takamura, D. Heiman, A. Henriques, G. Berera, J. S. Moodera

Abstract: Rare-earth nitrides, such as gadolinium nitride (GdN), have great potential for spintronic devices due to their unique magnetic and electronic properties. GdN has a large magnetic moment, low coercitivity and strong spin polarization suitable for spin transistors, magnetic memories and spin-based quantum computing devices. Its large spin splitting of the optical bandgap functions as a spin-filter… ▽ More Rare-earth nitrides, such as gadolinium nitride (GdN), have great potential for spintronic devices due to their unique magnetic and electronic properties. GdN has a large magnetic moment, low coercitivity and strong spin polarization suitable for spin transistors, magnetic memories and spin-based quantum computing devices. Its large spin splitting of the optical bandgap functions as a spin-filter that offers the means for spin-polarized current injection into metals, superconductors, topological insulators, 2D layers and other novel materials. As spintronics devices require thin films, a successful implementation of GdN demands a detailed investigation of the optical and magnetic properties in very thin films. With this objective, we investigate the dependence of the direct and indirect optical bandgaps (Eg) of half-metallic GdN, using the trilayer structure AlN(10 nm)/GdN(t)/AlN(10 nm) for GdN film thickness t in the ranging from 6 nm to 350 nm, in both paramagnetic (PM) and ferromagnetic (FM) phases. Our results show a bandgap of 1.6 eV in the PM state, while in the FM state the bandgap splits for the majority (0.8 eV) and minority (1.2 eV) spin states. As the GdN film becomes thinner the spin split magnitude increases by 60%, going from 0.290 eV to 0.460 eV. Our results point to methods for engineering GdN films for spintronic devices. △ Less

Submitted 12 September, 2023; originally announced September 2023.

Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions

Authors: Neha Jha, Anand Paryar, Tahereh Sadat Parvini, Christian Denker, Pavan K. Vardhanapu, Gonela Vijaykumar, Arne Ahrens, Michael Seibt, Jagadeesh S. Moodera, Swadhin K. Mandal, Markus Münzenberg

Abstract: Delocalized carbon-based radical species with unpaired spin, such as phenalenyl (PLY) radical, opened avenues for develo** multifunctional organic spintronic devices. Here we develop a novel technique based on a three-dimensional shadow mask and the in-situ deposition to fabricate PLY-, Cu-PLY-, and Zn-PLY-based organic magnetic tunnel junctions (OMTJs) with area 3x8 μm2 and improved morphology.… ▽ More Delocalized carbon-based radical species with unpaired spin, such as phenalenyl (PLY) radical, opened avenues for develo** multifunctional organic spintronic devices. Here we develop a novel technique based on a three-dimensional shadow mask and the in-situ deposition to fabricate PLY-, Cu-PLY-, and Zn-PLY-based organic magnetic tunnel junctions (OMTJs) with area 3x8 μm2 and improved morphology. The nonlinear and weakly temperature-dependent current-voltage (I-V) characteristics in combination with the low organic barrier height suggest tunneling as the dominant transport mechanism in the structurally and dimensionally optimized OMTJs. Cu-PLY-based OMTJs, show a significant magnetoresistance up to 14 percent at room temperature due to the formation of hybrid states at the metal-molecule interfaces called spinterface, which reveals the importance of spin-dependent interfacial modification in OMTJs design. In particular, Cu-PLY OMTJs shows a stable voltage-driven resistive switching response that suggests their use as a new viable and scalable platform for building molecular scale quantum memristors and processors. △ Less

Submitted 12 September, 2022; originally announced September 2022.

Comments: 12 pages, 4 figures, plus supplementary materials

Sensing the local magnetic environment through optically active defects in a layered magnetic semiconductor

Authors: Julian Klein, Zhigang Song, Benjamin **ault, Florian Dirnberger, Hang Chi, Jonathan B. Curtis, Rami Dana, Rezlind Bushati, Jiamin Quan, Lukas Dekanovsky, Zdenek Sofer, Andrea Alù, Vinod M. Menon, Jagadeesh S. Moodera, Marko Lončar, Prineha Narang, Frances M. Ross

Abstract: Atomic-level defects in van der Waals (vdW) materials are essential building blocks for quantum technologies and quantum sensing applications. The layered magnetic semiconductor CrSBr is an outstanding candidate for exploring optically active defects owing to a direct gap in addition to a rich magnetic phase diagram including a recently hypothesized defect-induced magnetic order at low temperature… ▽ More Atomic-level defects in van der Waals (vdW) materials are essential building blocks for quantum technologies and quantum sensing applications. The layered magnetic semiconductor CrSBr is an outstanding candidate for exploring optically active defects owing to a direct gap in addition to a rich magnetic phase diagram including a recently hypothesized defect-induced magnetic order at low temperature. Here, we show optically active defects in CrSBr that are probes of the local magnetic environment. We observe spectrally narrow (1 meV) defect emission in CrSBr that is correlated with both the bulk magnetic order and an additional low temperature defect-induced magnetic order. We elucidate the origin of this magnetic order in the context of local and non-local exchange coupling effects. Our work establishes vdW magnets like CrSBr as an exceptional platform to optically study defects that are correlated with the magnetic lattice. We anticipate that controlled defect creation allows for tailor-made complex magnetic textures and phases with the unique ingredient of direct optical access. △ Less

Submitted 6 July, 2022; originally announced July 2022.

Comments: main: 12 pages, 5 figures; SI: 14 pages, 11 figures

Journal ref: ACS Nano 17, 288-299 (2023)

Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride

Authors: Hang Chi, Yunbo Ou, Tim B. Eldred, Wenpei Gao, Sohee Kwon, Joseph Murray, Michael Dreyer, Robert E. Butera, Alexandre C. Foucher, Haile Ambaye, Jong Keum, Alice T. Greenberg, Yuhang Liu, Mahesh R. Neupane, George J. de Coster, Owen A. Vail, Patrick J. Taylor, Patrick A. Folkes, Charles Rong, Gen Yin, Roger K. Lake, Frances M. Ross, Valeria Lauter, Don Heiman, Jagadeesh S. Moodera

Abstract: Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as establ… ▽ More Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr2Te3 epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr2Te3 near the coercive field during the magnetization switching process, owing to the presence of strain-modulated magnetic domains. The versatile interface tunability of Berry curvature in Cr2Te3 thin films offers new opportunities for topological electronics. △ Less

Submitted 9 December, 2022; v1 submitted 5 July, 2022; originally announced July 2022.

Comments: Main: 9 pages, 5 figures; SI: 5 pages, 9 figures

Journal ref: Nature Communications 14, 3222 (2023)

Progress and prospects in the quantum anomalous Hall effect

Authors: Hang Chi, Jagadeesh S. Moodera

Abstract: The quantum anomalous Hall effect refers to the quantization of Hall effect in the absence of applied magnetic field. The quantum anomalous Hall effect is of topological nature and well suited for field-free resistance metrology and low-power information processing utilizing dissipationless chiral edge transport. In this Perspective, we provide an overview of the recent achievements as well as the… ▽ More The quantum anomalous Hall effect refers to the quantization of Hall effect in the absence of applied magnetic field. The quantum anomalous Hall effect is of topological nature and well suited for field-free resistance metrology and low-power information processing utilizing dissipationless chiral edge transport. In this Perspective, we provide an overview of the recent achievements as well as the materials challenges and opportunities, pertaining to engineering intrinsic/interfacial magnetic coupling, that are expected to propel future development of the field. △ Less

Submitted 29 July, 2022; v1 submitted 30 May, 2022; originally announced May 2022.

Comments: Invited for APL Materials, Special Topic - Materials Challenges and Synthesis Science of Emerging Quantum Materials

Journal ref: APL Materials 10, 090903 (2022)

Ubiquitous Superconducting Diode Effect in Superconductor Thin Films

Authors: Yasen Hou, Fabrizio Nichele, Hang Chi, Alessandro Lodesani, Yingying Wu, Markus F. Ritter, Daniel Z. Haxell, Margarita Davydova, Stefan Ilić, Ourania Glezakou-Elbert, Amith Varambally, F. Sebastian Bergeret, Akashdeep Kamra, Liang Fu, Patrick A. Lee, Jagadeesh S. Moodera

Abstract: The macroscopic coherence in superconductors supports dissipationless supercurrents which could play a central role in emerging quantum technologies. Accomplishing unequal supercurrents in the forward and backward directions would enable unprecedented functionalities. This nonreciprocity of critical supercurrents is called superconducting (SC) diode effect. We demonstrate strong SC diode effect in… ▽ More The macroscopic coherence in superconductors supports dissipationless supercurrents which could play a central role in emerging quantum technologies. Accomplishing unequal supercurrents in the forward and backward directions would enable unprecedented functionalities. This nonreciprocity of critical supercurrents is called superconducting (SC) diode effect. We demonstrate strong SC diode effect in conventional SC thin films, such as niobium and vanadium, employing external magnetic fields as small as 1 Oe. Interfacing the SC layer with a ferromagnetic semiconductor EuS, we further accomplish non-volatile SC diode effect reaching a giant efficiency of 65%. By careful control experiments and theoretical modeling, we demonstrate that the critical supercurrent nonreciprocity in SC thin films could be easily accomplished with asymmetrical vortex edge/surface barriers and the universal Meissner screening current governing the critical currents. Our engineering of the SC diode effect in simple systems opens door for novel technologies. Meanwhile, we reveal the ubiquity of Meissner screening effect induced SC diode effect in superconducting films, which should be eliminated with great care in the search of exotic superconducting states harboring finite-momentum Cooper pairing. △ Less

Submitted 3 February, 2023; v1 submitted 18 May, 2022; originally announced May 2022.

Comments: 27 pages, 16 figures

A van der Waals Interface Hosting Two Groups of Magnetic Skyrmions

Authors: Yingying Wu, Brian Francisco, Wei Wang, Yu Zhang, Caihua Wan, Xiufen Han, Hang Chi, Yasen Hou, Alessandro Lodesani, Yong-tao Cui, Kang L. Wang, Jagadeesh S. Moodera

Abstract: Multiple magnetic skyrmion phases add an additional degree of freedom for skyrmion based ultrahigh-density spin memory devices. Extending the field to two-dimensional van der Waals magnets is a rewarding challenge, where the realizable degree of freedoms (e.g. thickness, twisting angle and electrical gating) and high skyrmion density result in intriguing new properties and enhanced functionality.… ▽ More Multiple magnetic skyrmion phases add an additional degree of freedom for skyrmion based ultrahigh-density spin memory devices. Extending the field to two-dimensional van der Waals magnets is a rewarding challenge, where the realizable degree of freedoms (e.g. thickness, twisting angle and electrical gating) and high skyrmion density result in intriguing new properties and enhanced functionality. We report a van der Waals interface, formed by two 2D ferromagnets Cr2Ge2Te6 and Fe3GeTe2 with a Curie temperature of ~65 K and ~205 K, respectively, hosting two groups of magnetic skyrmions. Two sets of topological Hall effect are observed below 60 K when Cr2Ge2Te6 is magnetically ordered. These two groups of skyrmions are directly imaged using magnetic force microscopy. Interestingly, the magnetic skyrmions persist in the heterostructure in the remanent state with zero applied magnetic field. Our results are promising for the realization of skyrmionic devices based on van der Waals heterostructures hosting multiple skyrmion phases. △ Less

Submitted 15 February, 2022; v1 submitted 15 December, 2021; originally announced December 2021.

Comments: 4 figure for the main text

Superconducting spintronic tunnel diode

Authors: E. Strambini, M. Spies, N. Ligato, S. Ilic, M. Rouco, C. G. Orellana, M. Ilyn, C. Rogero, F. S. Bergeret, J. S. Moodera, P. Virtanen, T. T. Heikkilä, F. Giazotto

Abstract: Diodes are key elements for electronics, optics, and detection. The search for a material combination providing the best performances for the required application is continuously ongoing. Here, we present a superconducting spintronic tunnel diode based on the strong spin filtering and splitting generated by an EuS thin film between a superconducting Al and a normal metal Cu layer. The Cu/EuS/Al tu… ▽ More Diodes are key elements for electronics, optics, and detection. The search for a material combination providing the best performances for the required application is continuously ongoing. Here, we present a superconducting spintronic tunnel diode based on the strong spin filtering and splitting generated by an EuS thin film between a superconducting Al and a normal metal Cu layer. The Cu/EuS/Al tunnel junction achieves a large rectification (up to $\sim40$\%) already for a small voltage bias ($\sim 200$ $μ$V) thanks to the small energy scale of the system: the Al superconducting gap. With the help of an analytical theoretical model we can link the maximum rectification to the spin polarization of the barrier and describe the quasi-ideal Schottky-diode behavior of the junction. This cryogenic spintronic rectifier is promising for the application in highly-sensitive radiation detection for which two different configurations are evaluated. In addition, the superconducting diode may pave the way for future low-dissipation and fast superconducting electronics. △ Less

Submitted 9 November, 2023; v1 submitted 2 September, 2021; originally announced September 2021.

Comments: 17 pages, 12 figures

Journal ref: Nature Communications (2022)

Interfacial control of vortex-limited critical current in type II superconductor films

Authors: Marius K. Hope, Morten Amundsen, Dhavala Suri, Jagadeesh S. Moodera, Akashdeep Kamra

Abstract: In a small subset of type II superconductor films, the critical current is determined by a weakened Bean-Livingston barrier posed by the film surfaces to vortex penetration into the sample. A film property thus depends sensitively on the surface or interface to an adjacent material. We theoretically investigate the dependence of vortex barrier and critical current in such films on the Rashba spin-… ▽ More In a small subset of type II superconductor films, the critical current is determined by a weakened Bean-Livingston barrier posed by the film surfaces to vortex penetration into the sample. A film property thus depends sensitively on the surface or interface to an adjacent material. We theoretically investigate the dependence of vortex barrier and critical current in such films on the Rashba spin-orbit coupling at their interfaces with adjacent materials. Considering an interface with a magnetic insulator, we find the spontaneous supercurrent resulting from the exchange field and interfacial spin-orbit coupling to substantially modify the vortex surface barrier, consistent with a previous prediction. Thus, we show that the critical currents in superconductor-magnet heterostructures can be controlled, and even enhanced, via the interfacial spin-orbit coupling. Since the latter can be controlled via a gate voltage, our analysis predicts a class of heterostructures amenable to gate-voltage modulation of superconducting critical currents. It also sheds light on the recently observed gate-voltage enhancement of critical current in NbN superconducting films. △ Less

Submitted 18 November, 2021; v1 submitted 9 August, 2021; originally announced August 2021.

Journal ref: Phys. Rev. B 104, 184512 (2021)

Signatures of superconducting triplet pairing in Ni--Ga-bilayer junctions

Authors: Andreas Costa, Madison Sutula, Valeria Lauter, Jia Song, Jaroslav Fabian, Jagadeesh S. Moodera

Abstract: Ni-Ga bilayers are a versatile platform for exploring the competition between strongly antagonistic ferromagnetic and superconducting phases. We characterize the impact of this competition on the transport properties of highly-ballistic Al/Al2O3(/EuS)/Ni-Ga tunnel junctions from both experimental and theoretical points of view. While the conductance spectra of junctions comprising Ni (3 nm)-Ga (60… ▽ More Ni-Ga bilayers are a versatile platform for exploring the competition between strongly antagonistic ferromagnetic and superconducting phases. We characterize the impact of this competition on the transport properties of highly-ballistic Al/Al2O3(/EuS)/Ni-Ga tunnel junctions from both experimental and theoretical points of view. While the conductance spectra of junctions comprising Ni (3 nm)-Ga (60 nm) bilayers can be well understood within the framework of earlier results, which associate the emerging main conductance maxima with the junction films' superconducting gaps, thinner Ni (1.6 nm)-Ga (30 nm) bilayers entail completely different physics, and give rise to novel large-bias (when compared to the superconducting gap of the thin Al film as a reference) conductance-peak subseries that we term conductance shoulders. These conductance shoulders might attract considerable attention also in similar magnetic superconducting bilayer junctions, as we predict them to offer an experimentally well-accessible transport signature of superconducting triplet pairings that are induced around the interface of the Ni-Ga bilayer. We further substantiate this claim performing complementary polarized neutron reflectometry measurements on the bilayers, from which we deduce (1) a nonuniform magnetization structure in Ga in a several nanometer-thick area around the Ni-Ga boundary and can simultaneously (2) satisfactorily fit the obtained data only considering the paramagnetic Meissner response scenario. While the latter provides independent experimental evidence of induced triplet superconductivity inside the Ni-Ga bilayer, the former might serve as the first experimental hint of its potential microscopic physical origin. △ Less

Submitted 30 March, 2022; v1 submitted 5 February, 2021; originally announced February 2021.

Comments: 24 pages, 10 figures, 1 table

Journal ref: New. J. Phys. 24, 033046 (2022)

Magnon-mediated spin currents in Tm3Fe5O12/Pt with perpendicular magnetic anisotropy

Authors: G. L. S. Vilela, J. E. Abrao, E. Santos, Y. Yao, J. B. S. Mendes, R. L. Rodriguez-Suarez, S. M. Rezende, W. Han, A. Azevedo, J. S. Moodera

Abstract: The control of pure spin currents carried by magnons in magnetic insulator (MI) garnet films with a robust perpendicular magnetic anisotropy (PMA) is of great interest to spintronic technology as they can be used to carry, transport and process information. Garnet films with PMA present labyrinth domain magnetic structures that enrich the magnetization dynamics, and could be employed in more effic… ▽ More The control of pure spin currents carried by magnons in magnetic insulator (MI) garnet films with a robust perpendicular magnetic anisotropy (PMA) is of great interest to spintronic technology as they can be used to carry, transport and process information. Garnet films with PMA present labyrinth domain magnetic structures that enrich the magnetization dynamics, and could be employed in more efficient wave-based logic and memory computing devices. In MI/NM bilayers, where NM being a normal metal providing a strong spin-orbit coupling, the PMA benefits the spin-orbit torque (SOT) driven magnetization's switching by lowering the needed current and rendering the process faster, crucial for develo** magnetic random-access memories (SOT-MRAM). In this work, we investigated the magnetic anisotropies in thulium iron garnet (TIG) films with PMA via ferromagnetic resonance measurements, followed by the excitation and detection of magnon-mediated pure spin currents in TIG/Pt driven by microwaves and heat currents. TIG films presented a Gilbert dam** constant α~0.01, with resonance fields above 3.5 kOe and half linewidths broader than 60 Oe, at 300 K and 9.5 GHz. The spin-to-charge current conversion through TIG/Pt was observed as a micro-voltage generated at the edges of the Pt film. The obtained spin Seebeck coefficient was 0.54 μV/K, confirming also the high interfacial spin transparency. △ Less

Submitted 21 September, 2020; originally announced September 2020.

Charge transport through spin-polarized tunnel junction between two spin-split superconductors

Authors: Mikel Rouco, Subrata Chakraborty, Faluke Aikebaier, V. N. Golovach, Elia Strambini, Jagadeesh S. Moodera, Francesco Giazotto, Tero T. Heikkilä, F. Sebastian Bergeret

Abstract: We investigate transport properties of junctions between two spin-split superconductors linked by a spin-polarized tunneling barrier. The spin-splitting fields in the superconductors (S) are induced by adjacent ferromagnetic insulating (FI) layers with arbitrary magnetization. The aim of this study is twofold: On the one hand, we present a theoretical framework based on the quasiclassical Green's… ▽ More We investigate transport properties of junctions between two spin-split superconductors linked by a spin-polarized tunneling barrier. The spin-splitting fields in the superconductors (S) are induced by adjacent ferromagnetic insulating (FI) layers with arbitrary magnetization. The aim of this study is twofold: On the one hand, we present a theoretical framework based on the quasiclassical Green's functions to calculate the Josephson and quasiparticle current through the junctions in terms of the different parameters characterizing it. Our theory predicts qualitative new results for the tunneling differential conductance, $dI/dV$, when the spin-splitting fields of the two superconductors are non-collinear. We also discuss how junctions based on FI/S can be used to realize anomalous Josephson junctions with a constant geometric phase shift in the current-phase relation. As a result, they may exhibit spontaneous triplet supercurrents in the absence of a phase difference between the S electrodes. On the other hand, we show results of planar tunneling spectroscopy of a EuS/Al/Al$_2$O$_3$/EuS/Al junction and use our theoretical model to reproduce the obtained $dI/dV$ curves. Comparison between theory and experiment reveals information about the intrinsic parameters of the junction, such as the size of the superconducting order parameter, spin-splitting fields and spin relaxation, and also about properties of the two EuS films, as their morphology, domain structure, and magnetic anisotropy. △ Less

Submitted 12 November, 2019; v1 submitted 21 June, 2019; originally announced June 2019.

Comments: 11 pages, 4 figures

Journal ref: Phys. Rev. B 100, 184501 (2019)

Do topology and ferromagnetism cooperate at the EuS/Bi$_2$Se$_3$ interface?

Authors: J. A. Krieger, Y. Ou, M. Caputo, A. Chikina, M. Döbeli, M. -A. Husanu, I. Keren, T. Prokscha, A. Suter, C. -Z. Chang, J. S. Moodera, V. N. Strocov, Z. Salman

Abstract: We probe the local magnetic properties of interfaces between the insulating ferromagnet EuS and the topological insulator Bi$_2$Se$_3$ using low energy muon spin rotation (LE-$μ$SR). We compare these to the interface between EuS and the topologically trivial metal, titanium. Below the magnetic transition of EuS, we detect strong local magnetic fields which extend several nm into the adjacent layer… ▽ More We probe the local magnetic properties of interfaces between the insulating ferromagnet EuS and the topological insulator Bi$_2$Se$_3$ using low energy muon spin rotation (LE-$μ$SR). We compare these to the interface between EuS and the topologically trivial metal, titanium. Below the magnetic transition of EuS, we detect strong local magnetic fields which extend several nm into the adjacent layer and cause a complete depolarization of the muons. However, in both Bi$_2$Se$_3$ and titanium we measure similar local magnetic fields, implying that their origin is mostly independent of the topological properties of the interface electronic states. In addition, we use resonant soft X-ray angle resolved photoemission spectroscopy (SX-ARPES) to probe the electronic band structure at the interface between EuS and Bi$_2$Se$_3$. By tuning the photon energy to the Eu anti-resonance at the Eu $M_5$ pre-edge we are able to detect the Bi$_2$Se$_3$ conduction band, through a protective Al$_2$O$_3$ cap** layer and the EuS layer. Moreover, we observe a signature of an interface-induced modification of the buried Bi$_2$Se$_3$ wave functions and/or the presence of interface states. △ Less

Submitted 31 January, 2019; originally announced January 2019.

Electronic Fingerprints of Cr and V Dopants in Topological Insulator Sb2Te3

Authors: Wenhan Zhang, Damien West, Seng Huat Lee, Yunsheng Qiu, Cui-Zu Chang, Jagadeesh S. Moodera, Yew San Hor, Shengbai Zhang, Weida Wu

Abstract: By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb2Te3. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide… ▽ More By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb2Te3. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide electronic fingerprints for the co-doped magnetic TI samples with the enhanced quantum anomalous Hall effect. Our results also facilitate the exploration of the underlying mechanism of the enhanced quantum anomalous Hall temperature in Cr/V co-doped TIs. △ Less

Submitted 17 September, 2018; originally announced September 2018.

Comments: 21 pages, 7 figures

Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures

Authors: David Rakhmilevich, Fei Wang, Weiwei Zhao, Moses H. W. Chan, Jagadeesh S. Moodera, Chaoxing Liu, Cui-Zu Chang

Abstract: The Dirac electrons occupying the surface states (SSs) of topological insulators (TIs) have been predicted to exhibit many exciting magneto-transport phenomena. Here we report on the first experimental observation of an unconventional planar Hall effect (PHE) and an electrically gate-tunable hysteretic planar magnetoresistance (PMR) in EuS/TI heterostructures, in which EuS is a ferromagnetic insul… ▽ More The Dirac electrons occupying the surface states (SSs) of topological insulators (TIs) have been predicted to exhibit many exciting magneto-transport phenomena. Here we report on the first experimental observation of an unconventional planar Hall effect (PHE) and an electrically gate-tunable hysteretic planar magnetoresistance (PMR) in EuS/TI heterostructures, in which EuS is a ferromagnetic insulator (FMI) with an in-plane magnetization. In such exchange-coupled FMI/TI heterostructures, we find a significant (suppressed) PHE when the in-plane magnetic field is parallel (perpendicular) to the electric current. This behavior differs from previous observations of the PHE in ferromagnets and semiconductors. Furthermore, as the thickness of the 3D TI films is reduced into the 2D limit, in which the Dirac SSs develop a hybridization gap, we find a suppression of the PHE around the charge neutral point indicating the vital role of Dirac SSs in this phenomenon. To explain our findings, we outline a symmetry argument that excludes linear-Hall mechanisms and suggest two possible non-linear Hall mechanisms that can account for all the essential qualitative features in our observations. △ Less

Submitted 15 August, 2018; originally announced August 2018.

Comments: 17 pages, 4 figures, accepted by Phys. Rev. B

Journal ref: Phys. Rev. B 98, 094404 (2018)

Signatures of long-range-correlated disorder in the magnetotransport of ultrathin topological insulators

Authors: D. Nandi, B. Skinner, G. H. Lee, K. -F. Huang, K. Shain, Cui-Zu Chang, Y. Ou, S. -P. Lee, J. Ward, J. S. Moodera, P. Kim, B. I. Halperin, A. Yacoby

Abstract: In an ultrathin topological insulator (TI) film, a hybridization gap opens in the TI surface states, and the system is expected to become either a trivial insulator or a quantum spin Hall insulator when the chemical potential is within the hybridization gap. Here we show, however, that these insulating states are destroyed by the presence of a large and long-range-correlated disorder potential, wh… ▽ More In an ultrathin topological insulator (TI) film, a hybridization gap opens in the TI surface states, and the system is expected to become either a trivial insulator or a quantum spin Hall insulator when the chemical potential is within the hybridization gap. Here we show, however, that these insulating states are destroyed by the presence of a large and long-range-correlated disorder potential, which converts the expected insulator into a metal. We perform transport measurements in ultrathin, dual-gated topological insulator films as a function of temperature, gate voltage, and magnetic field, and we observe a metallic-like, non-quantized conductivity, which exhibits a weak antilocalization-like cusp at the low magnetic field and gives way to a nonsaturating linear magnetoresistance at large field. We explain these results by considering the disordered network of electron- and hole-type puddles induced by charged impurities. We argue theoretically that such disorder can produce an insulator-to-metal transition as a function of increasing disorder strength, and we derive a condition on the band gap and the impurity concentration necessary to observe the insulating state. We also explain the linear magnetoresistance in terms of strong spatial fluctuations of the local conductivity, using both numerical simulations and a theoretical scaling argument. △ Less

Submitted 7 August, 2018; originally announced August 2018.

Comments: 13 pages, 14 figures

Journal ref: Phys. Rev. B 98, 214203 (2018)

A superconducting absolute spin valve

Authors: G. De Simoni, E. Strambini, J. S. Moodera, F. S. Bergeret, F. Giazotto

Abstract: A superconductor with a spin-split excitation spectrum behaves as an ideal ferromagnetic spin-injector in a tunneling junction. It was theoretical predicted that the combination of two such spin-split superconductors with independently tunable magnetizations, may be used as an ideal $absolute$ spin-valve. Here we report on the first switchable superconducting spin-valve based on two EuS/Al bilayer… ▽ More A superconductor with a spin-split excitation spectrum behaves as an ideal ferromagnetic spin-injector in a tunneling junction. It was theoretical predicted that the combination of two such spin-split superconductors with independently tunable magnetizations, may be used as an ideal $absolute$ spin-valve. Here we report on the first switchable superconducting spin-valve based on two EuS/Al bilayers coupled through an aluminum oxide tunnel barrier. The spin-valve shows a relative resistance change between the parallel and antiparallel configuration of the EuS layers up to 900% that demonstrates a highly spin-polarized currents through the junction. Our device may be pivotal for realization of thermoelectric radiation detectors, logical element for a memory cell in cryogenics superconductor-based computers and superconducting spintronics in general. △ Less

Submitted 8 June, 2018; originally announced June 2018.

Comments: 6 pages, 4 color figures, 1 table

Journal ref: Nano Lett., 2018, 18, 6369

Dirac-Surface-State Modulated Spin Dynamics in a Ferrimagnetic Insulator at Room Temperature

Authors: Chi Tang, Qi Song, Cui-Zu Chang, Yadong Xu, Yuichi Ohnuma, Mamoru Matsuo, Yawen Liu, Wei Yuan, Yunyan Yao, Jagadeesh S. Moodera, Sadamichi Maekawa, Wei Han, **g Shi

Abstract: This work demonstrates dramatically modified spin dynamics of magnetic insulator (MI) by the spin-momentum locked Dirac surface states of the adjacent topological insulator (TI) which can be harnessed for spintronic applications. As the Bi-concentration x is systematically tuned in 5 nm thick (BixSb1-x)2Te3 TI film, the weight of the surface relative to bulk states peaks at x = 0.32 when the chemi… ▽ More This work demonstrates dramatically modified spin dynamics of magnetic insulator (MI) by the spin-momentum locked Dirac surface states of the adjacent topological insulator (TI) which can be harnessed for spintronic applications. As the Bi-concentration x is systematically tuned in 5 nm thick (BixSb1-x)2Te3 TI film, the weight of the surface relative to bulk states peaks at x = 0.32 when the chemical potential approaches the Dirac point. At this concentration, the Gilbert dam** constant of the precessing magnetization in 10 nm thick Y3Fe5O12 MI film in the MI/TI heterostructures is enhanced by an order of magnitude, the largest among all concentrations. In addition, the MI acquires additional strong magnetic anisotropy that favors the in-plane orientation with similar Bi-concentration dependence. These extraordinary effects of the Dirac surface states distinguish TI from other materials such as heavy metals in modulating spin dynamics of the neighboring magnetic layer. △ Less

Submitted 31 May, 2018; originally announced June 2018.

Logarithmic singularities and quantum oscillations in magnetically doped topological insulators

Authors: Debaleena Nandi, Inti Sodemann, Kevin Shain, Gil-Ho Lee, Ko-Fan Huang, Cui-Zu Chang, Yunbo Ou, Shu-** Lee, Jonathan Ward, Jagadeesh S. Moodera, Philip Kim, Amir Yacoby

Abstract: We report magnetotransport measurements on magnetically doped (Bi,Sb)$_2$Te$_3$ films grown by molecular beam epitaxy. In Hallbar devices, logarithmic dependence on temperature and bias voltage are obseved in both the longitudinal and anomalous Hall resistance. The interplay of disorder and electron-electron interactions is found to explain quantitatively the observed logarithmic singularities and… ▽ More We report magnetotransport measurements on magnetically doped (Bi,Sb)$_2$Te$_3$ films grown by molecular beam epitaxy. In Hallbar devices, logarithmic dependence on temperature and bias voltage are obseved in both the longitudinal and anomalous Hall resistance. The interplay of disorder and electron-electron interactions is found to explain quantitatively the observed logarithmic singularities and is a dominant scattering mechanism in these samples. Submicron scale devices exhibit intriguing quantum oscillations at high magnetic fields with dependence on bias voltage. The observed quantum oscillations can be attributed to bulk and surface transport. △ Less

Submitted 15 April, 2018; v1 submitted 28 November, 2017; originally announced November 2017.

Comments: 10 pages, 13 figures

Journal ref: Phys. Rev. B 97, 085151 (2018)

Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pum**

Authors: Yunyan Yao, Qi Song, Yota Takamura, Juan Pedro Cascales, Wei Yuan, Yang Ma, Yu Yun, X. C. Xie, Jagadeesh S. Moodera, Wei Han

Abstract: The emerging field of superconductor (SC) spintronics has attracted intensive attentions recently. Many fantastic spin dependent properties in SC have been discovered, including the observation of large magnetoresistance, long spin lifetimes and the giant spin Hall effect in SC, as well as spin supercurrent in Josephson junctions, etc. Regarding the spin dynamic in SC films, few studies has been r… ▽ More The emerging field of superconductor (SC) spintronics has attracted intensive attentions recently. Many fantastic spin dependent properties in SC have been discovered, including the observation of large magnetoresistance, long spin lifetimes and the giant spin Hall effect in SC, as well as spin supercurrent in Josephson junctions, etc. Regarding the spin dynamic in SC films, few studies has been reported yet. Here, we report the investigation of the spin dynamics in an s-wave superconducting NbN film via spin pum** from an adjacent insulating ferromagnet GdN layer. A profound coherence peak of the Gilbert dam** is observed slightly below the superconducting critical temperature of the NbN layer, which is consistent with recent theoretical studies. Our results further indicate that spin pum** could be a powerful tool for investigating the spin dynamics in 2D crystalline superconductors. △ Less

Submitted 13 June, 2018; v1 submitted 30 October, 2017; originally announced October 2017.

Comments: 11 pages, 4 figures, and SI

Journal ref: Phys. Rev. B 97, 224414 (2018)

Spectroscopic perspective on the interplay between electronic and magnetic properties of magnetically doped topological insulators

Authors: Jonas A. Krieger, Cui-Zu Chang, Marius-Adrian Husanu, Daria Sostina, Arthur Ernst, Mikhail M. Otrokov, Thomas Prokscha, Thorsten Schmitt, Andreas Suter, Maia Garcia Vergniory, Evgueni V. Chulkov, Jagadeesh S. Moodera, Vladimir N. Strocov, Zaher Salman

Abstract: We combine low energy muon spin rotation (LE-$μ$SR) and soft-X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to study the magnetic and electronic properties of magnetically doped topological insulators, (Bi,Sb)$_2$Te$_3$. We find that one achieves a full magnetic volume fraction in samples of (V/Cr)$_x$(Bi,Sb)$_{2-x}$Te$_3$ at do** levels x $\gtrsim$ 0.16. The observed magnetic transi… ▽ More We combine low energy muon spin rotation (LE-$μ$SR) and soft-X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to study the magnetic and electronic properties of magnetically doped topological insulators, (Bi,Sb)$_2$Te$_3$. We find that one achieves a full magnetic volume fraction in samples of (V/Cr)$_x$(Bi,Sb)$_{2-x}$Te$_3$ at do** levels x $\gtrsim$ 0.16. The observed magnetic transition is not sharp in temperature indicating a gradual magnetic ordering. We find that the evolution of magnetic ordering is consistent with formation of ferromagnetic islands which increase in number and/or volume with decreasing temperature. Resonant ARPES at the V $L_3$ edge reveals a nondispersing impurity band close to the Fermi level as well as V weight integrated into the host band structure. Calculations within the coherent potential approximation of the V contribution to the spectral function confirm that this impurity band is caused by V in substitutional sites. The implications of our results on the observation of the quantum anomalous Hall effect at mK temperatures are discussed. △ Less

Submitted 28 November, 2017; v1 submitted 17 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. B 96, 184402 (2017)

Dirac-Surface-State-Dominated Spin to Charge Current Conversion in the Topological Insulator $(Bi_{0.22}Sb_{0.78})_2Te_3$ Films at Room Temperature

Authors: J. B. S. Mendes, O. Alves-Santos, J. Holanda, R. P. Loreto, C. I. L. de Araujo, Cui-Zu Chang, J. S. Moodera, A. Azevedo, S. M. Rezende

Abstract: We report the spin to charge current conversation in an intrinsic topological insulator (TI) $(Bi_{0.22}Sb_{0.78})_2Te_3$ film at room temperature. The spin currents are generated in a thin layer of permalloy (Py) by two different processes, spin pum** (SPE) and spin Seebeck effects (SSE). In the first we use microwave-driven ferromagnetic resonance of the Py film to generate a SPE spin current… ▽ More We report the spin to charge current conversation in an intrinsic topological insulator (TI) $(Bi_{0.22}Sb_{0.78})_2Te_3$ film at room temperature. The spin currents are generated in a thin layer of permalloy (Py) by two different processes, spin pum** (SPE) and spin Seebeck effects (SSE). In the first we use microwave-driven ferromagnetic resonance of the Py film to generate a SPE spin current that is injected into the TI $(Bi_{0.22}Sb_{0.78})_2Te_3$ layer in direct contact with Py. In the second we use the SSE in the longitudinal configuration in Py without contamination by the Nernst effect made possible with a thin NiO layer between the Py and $(Bi_{0.22}Sb_{0.78})_2Te_3$ layers. The spin-to-charge current conversion is attributed to the inverse Edelstein effect (IEE) made possible by the spin-momentum locking in the electron Fermi contours due to the Rashba field. The measurements by the two techniques yield very similar values for the IEE parameter, which are larger than the reported values in the previous studies on topological insulators. △ Less

Submitted 17 October, 2017; originally announced October 2017.

Comments: 18 pages and 7 figures

Journal ref: Phys. Rev. B 96, 180415 (2017)

Above 400 K Robust Perpendicular Ferromagnetic Phase in a Topological Insulator

Authors: Chi Tang, Cui-Zu Chang, Gejian Zhao, Yawen Liu, Zilong Jiang, Chao-Xing Liu, Martha R. McCartney, David J. Smith, Tingyong Chen, Jagadeesh S. Moodera, **g Shi

Abstract: The quantum anomalous Hall effect (QAHE) that emerges under broken time-reversal symmetry in topological insulators (TI) exhibits many fascinating physical properties for potential applications in nano-electronics and spintronics. However, in transition-metal doped TI, the only experimentally demonstrated QAHE system to date, the effect is lost at practically relevant temperatures. This constraint… ▽ More The quantum anomalous Hall effect (QAHE) that emerges under broken time-reversal symmetry in topological insulators (TI) exhibits many fascinating physical properties for potential applications in nano-electronics and spintronics. However, in transition-metal doped TI, the only experimentally demonstrated QAHE system to date, the effect is lost at practically relevant temperatures. This constraint is imposed by the relatively low Curie temperature (Tc) and inherent spin disorder associated with the random magnetic dopants. Here we demonstrate drastically enhanced Tc by exchange coupling TI to Tm3Fe5O12, a high-Tc magnetic insulator with perpendicular magnetic anisotropy. Signatures that the TI surface states acquire robust ferromagnetism are revealed by distinct squared anomalous Hall hysteresis loops at 400 K. Point-contact Andreev reflection spectroscopy confirms that the TI surface is indeed spin-polarized. The greatly enhanced Tc, absence of spin disorder, and perpendicular anisotropy are all essential to the occurrence of the QAHE at high temperatures. △ Less

Submitted 24 June, 2017; originally announced June 2017.

Spatially modulated magnetic structure of EuS due to the tetragonal domain structure of SrTiO$_3$

Authors: Aaron J. Rosenberg, Ferhat Katmis, John R. Kirtley, Nuh Gedik, Jagadeesh S. Moodera, Kathryn A. Moler

Abstract: The combination of ferromagnets with topological superconductors or insulators allows for new phases of matter that support excitations such as chiral edge modes and Majorana fermions. EuS, a wide-band-gap ferromagnetic insulator with a Curie temperature around 16 K, and SrTiO$_3$ (STO), an important substrate for engineering heterostructures, may support these phases. We present scanning supercon… ▽ More The combination of ferromagnets with topological superconductors or insulators allows for new phases of matter that support excitations such as chiral edge modes and Majorana fermions. EuS, a wide-band-gap ferromagnetic insulator with a Curie temperature around 16 K, and SrTiO$_3$ (STO), an important substrate for engineering heterostructures, may support these phases. We present scanning superconducting quantum interference device (SQUID) measurements of EuS grown epitaxially on STO that reveal micron-scale variations in ferromagnetism and paramagnetism. These variations are oriented along the STO crystal axes and only change their configuration upon thermal cycling above the STO cubic-to-tetragonal structural transition temperature at 105 K, indicating that the observed magnetic features are due to coupling between EuS and the STO tetragonal structure. We speculate that the STO tetragonal distortions may strain the EuS, altering the magnetic anisotropy on a micron-scale. This result demonstrates that local variation in the induced magnetic order from EuS grown on STO needs to be considered when engineering new phases of matter that require spatially homogeneous exchange. △ Less

Submitted 22 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. Materials 1, 074406 (2017)

Structural properties of thin-film ferromagnetic topological insulators

Authors: C. L. Richardson, J. M. Devine-Stoneman, G. Divitini, M. E. Vickers, C. -Z. Chang, M. Amado, J. S. Moodera, J. W. A. Robinson

Abstract: We present a comprehensive study of the crystal structure of the thin-film, ferromagnetic topological insulator (Bi, Sb)$_{2-x}$V$_x$Te$_3$. The dissipationless quantum anomalous Hall edge states it manifests are of particular interest for spintronics, as a natural spin filter or pure spin source, and as qubits for topological quantum computing. For ranges typically used in experiments, we investi… ▽ More We present a comprehensive study of the crystal structure of the thin-film, ferromagnetic topological insulator (Bi, Sb)$_{2-x}$V$_x$Te$_3$. The dissipationless quantum anomalous Hall edge states it manifests are of particular interest for spintronics, as a natural spin filter or pure spin source, and as qubits for topological quantum computing. For ranges typically used in experiments, we investigate the effect of do**, substrate choice and film thickness on the (Bi, Sb)$_2$Te$_3$ unit cell using high-resolution X-ray diffractometry. Scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy measurements provide local structural and interfacial information. We find that the unit cell is unaffected in-plane by vanadium do** changes, and remains unchanged over a thickness range of 4--10 quintuple layers (1 QL $\approx$ 1 nm). The in-plane lattice parameter ($a$) also remains the same in films grown on different substrate materials. However, out-of-plane the $c$-axis is reduced in films grown on less closely lattice-matched substrates, and increases with the do** level. △ Less

Submitted 6 June, 2017; originally announced June 2017.

Comments: 10 pages, 6 figures, 1 table

Revealing the magnetic proximity effect in EuS/Al bilayers through superconducting tunneling spectroscopy

Authors: E. Strambini, V. N. Golovach, G. De Simoni, J. S. Moodera, F. S. Bergeret, F. Giazotto

Abstract: A ferromagnetic insulator attached to a superconductor is known to induce an exchange splitting of the Bardeen-Cooper-Schrieffer (BCS) singularity by a magnitude proportional to the magnetization, and penetrating into the superconductor to a depth comparable with the superconducting coherence length. We study this long-range magnetic proximity effect in EuS/Al bilayers and find that the exchange s… ▽ More A ferromagnetic insulator attached to a superconductor is known to induce an exchange splitting of the Bardeen-Cooper-Schrieffer (BCS) singularity by a magnitude proportional to the magnetization, and penetrating into the superconductor to a depth comparable with the superconducting coherence length. We study this long-range magnetic proximity effect in EuS/Al bilayers and find that the exchange splitting of the BCS peaks is present already in the unpolarized state of the ferromagnetic insulator (EuS), and is being further enhanced when magnetizing the sample by a magnetic field. The measurement data taken at the lowest temperatures feature a high contrast which has allowed us to relate the line shape of the split BCS conductance peaks to the characteristic magnetic domain structure of the EuS layer in the unpolarized state. These results pave the way to engineering triplet superconducting correlations at domain walls in EuS/Al bilayers. Furthermore, the hard gap and clear splitting observed in our tunneling spectroscopy measurements indicate that EuS/Al bilayers are excellent candidates for substituting strong magnetic fields in experiments studying Majorana bound states. △ Less

Submitted 22 May, 2017; v1 submitted 13 May, 2017; originally announced May 2017.

Comments: 9 pages, 4 color figures

Journal ref: Phys. Rev. Materials 1, 054402 (2017)

Direct imaging of electron transfer and its influence on superconducting pairing at FeSe/SrTiO3 interface

Authors: Weiwei Zhao, Mingda Li, Cui-Zu Chang, Jue Jiang, Lijun Wu, Chaoxing Liu, Yimei Zhu, Jagadeesh S. Moodera, Moses H. W. Chan

Abstract: The exact mechanism responsible for the tenfold enhancement of superconducting transition temperature (Tc) in a monolayer iron selenide (FeSe) on SrTiO3(STO) substrate over that of bulk FeSe, is an open issue. We present here a coordinated study of electrical transport and low temperature electron energy-loss spectroscopy (EELS) measurements on FeSe/STO films of various thicknesses. Our EELS mappi… ▽ More The exact mechanism responsible for the tenfold enhancement of superconducting transition temperature (Tc) in a monolayer iron selenide (FeSe) on SrTiO3(STO) substrate over that of bulk FeSe, is an open issue. We present here a coordinated study of electrical transport and low temperature electron energy-loss spectroscopy (EELS) measurements on FeSe/STO films of various thicknesses. Our EELS map** across the FeSe/STO interface shows direct evidence of band-bending caused by electrons transferred from STO to FeSe layer. The transferred electrons were found to accumulate only within the first two atomic layers of FeSe films near the STO substrate. Our transport results found a positive backgate applied from STO is particularly effective in enhancing Tc of the films while minimally changing the carrier density. We suggest that the positive backgate tends to 'pull' the transferred electrons in FeSe films closer to the interface and thus further enhances both their coupling to interfacial phonons and the electron-electron interaction within FeSe films, thus leading to a huge enhancement of Tc in FeSe films. △ Less

Submitted 13 January, 2017; originally announced January 2017.

Comments: Submitted to Nature Communications on 24th June 2016. Comments are welcome

Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film

Authors: W. Li, M. Claassen, Cui-Zu Chang, B. Moritz, T. Jia, C. Zhang, S. Rebec, J. J. Lee, M. Hashimoto, D. -H. Lu, R. G. Moore, J. S. Moodera, T. P. Devereaux, Z. -X. Shen

Abstract: The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we… ▽ More The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)2Te3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy. △ Less

Submitted 9 September, 2016; originally announced September 2016.

Journal ref: Sci. Rep. 6, 32732 (2016)

Observation of the quantum-anomalous-Hall insulator to Anderson insulator quantum phase transition and its scaling behavior

Authors: Cui-Zu Chang, Weiwei Zhao, Jian Li, J. K. Jain, Chaoxing Liu, Jagadeesh. S. Moodera, Moses H. W. Chan

Abstract: Fundamental insight into the nature of the quantum phase transition from a superconductor to an insulator in two dimensions, or from one plateau to the next or to an insulator in quantum Hall effect, has been revealed through the study of its scaling behavior. Here, we report on the experimental observation of a quantum phase transition from a quantum-anomalous-Hall (QAH) insulator to an Anderson… ▽ More Fundamental insight into the nature of the quantum phase transition from a superconductor to an insulator in two dimensions, or from one plateau to the next or to an insulator in quantum Hall effect, has been revealed through the study of its scaling behavior. Here, we report on the experimental observation of a quantum phase transition from a quantum-anomalous-Hall (QAH) insulator to an Anderson insulator in a magnetic topological insulator by tuning the chemical potential. Our experiment demonstrates the existence of scaling behavior from which we extract the critical exponent for this quantum phase transition. We expect that our work will motivate much further investigation of many properties of quantum phase transition in this new context. △ Less

Submitted 22 August, 2016; originally announced August 2016.

Comments: 17 pages, 4 figures. Accepted by PRL. Comments are welcome

Journal ref: PRL 117, 126802 (2016)

Dumbbell Defects in FeSe Films: A Scanning Tunneling Microscopy and First-Principles Investigation

Authors: Dennis Huang, Tatiana A. Webb, Can-Li Song, Cui-Zu Chang, Jagadeesh S. Moodera, Efthimios Kaxiras, Jennifer E. Hoffman

Abstract: The properties of iron-based superconductors (Fe-SCs) can be varied dramatically with the introduction of dopants and atomic defects. As a pressing example, FeSe, parent phase of the highest-$T_c$ Fe-SC, exhibits prevalent defects with atomic-scale "dumbbell" signatures as imaged by scanning tunneling microscopy (STM). These defects spoil superconductivity when their concentration exceeds 2.5%. Re… ▽ More The properties of iron-based superconductors (Fe-SCs) can be varied dramatically with the introduction of dopants and atomic defects. As a pressing example, FeSe, parent phase of the highest-$T_c$ Fe-SC, exhibits prevalent defects with atomic-scale "dumbbell" signatures as imaged by scanning tunneling microscopy (STM). These defects spoil superconductivity when their concentration exceeds 2.5%. Resolving their chemical identity is prerequisite to applications such as nanoscale patterning of superconducting/nonsuperconducting regions in FeSe, as well as fundamental questions such as the mechanism of superconductivity and the path by which the defects destroy it. We use STM and density functional theory to characterize and identify the dumbbell defects. In contrast to previous speculations about Se adsorbates or substitutions, we find that an Fe-site vacancy is the most energetically favorable defect in Se-rich conditions, and reproduces our observed STM signature. Our calculations shed light more generally on the nature of Se cap**, the removal of Fe vacancies via annealing, and their ordering into a $\sqrt{5}$$\times$$\sqrt{5}$ superstructure in FeSe and related alkali-doped compounds. △ Less

Submitted 22 June, 2016; originally announced June 2016.

Comments: 7 pages, 5 figures

Journal ref: Nano Lett. 2016

Direct measurement of proximity-induced magnetism at the interface between a topological insulator and a ferromagnet

Authors: Changmin Lee, Ferhat Katmis, Pablo Jarillo-Herrero, Jagadeesh S. Moodera, Nuh Gedik

Abstract: When a topological insulator (TI) is in contact with a ferromagnet, both time reversal and inversion symmetries are broken at the interface. An energy gap is formed at the TI surface, and its electrons gain a net magnetic moment through short-range exchange interactions. Magnetic TIs can host various exotic quantum phenomena, such as massive Dirac fermions, Majorana fermions, the quantum anomalous… ▽ More When a topological insulator (TI) is in contact with a ferromagnet, both time reversal and inversion symmetries are broken at the interface. An energy gap is formed at the TI surface, and its electrons gain a net magnetic moment through short-range exchange interactions. Magnetic TIs can host various exotic quantum phenomena, such as massive Dirac fermions, Majorana fermions, the quantum anomalous Hall effect and chiral edge currents along the domain boundaries. However, selective measurement of induced magnetism at the buried interface has remained a challenge. Using magnetic second harmonic generation, we directly probe both the in-plane and out-of-plane magnetizations induced at the interface between the ferromagnetic insulator (FMI) EuS and the three-dimensional TI Bi2Se3. Our findings not only allow characterizing magnetism at the TI-FMI interface but also lay the groundwork for imaging magnetic domains and domain boundaries at the magnetic TI surfaces. △ Less

Submitted 14 July, 2016; v1 submitted 25 May, 2016; originally announced May 2016.

Comments: 26 pages, 7 figures Journal reference added; title modified

Journal ref: Nat. Commun. 7, 12014 (2016)

Positron surface state as a spectroscopic probe for characterizing surfaces of topological insulator materials

Authors: Vincent Callewaert, K. Shastry, Rolando Saniz, Ilja Makkonen, Bernardo Barbiellini, Badih A. Assaf, Donald Heiman, Jagadeesh S. Moodera, Bart Partoens, Arun Bansil, A. H. Weiss

Abstract: Topological insulators are attracting considerable interest due to their potential for technological applications and as platforms for exploring wide-ranging fundamental science questions. In order to exploit, fine-tune, control and manipulate the topological surface states, spectroscopic tools which can effectively probe their properties are of key importance. Here, we demonstrate that positrons… ▽ More Topological insulators are attracting considerable interest due to their potential for technological applications and as platforms for exploring wide-ranging fundamental science questions. In order to exploit, fine-tune, control and manipulate the topological surface states, spectroscopic tools which can effectively probe their properties are of key importance. Here, we demonstrate that positrons provide a sensitive probe for topological states, and that the associated annihilation spectrum provides a new technique for characterizing these states. Firm experimental evidence for the existence of a positron surface state near Bi$_2$Te$_2$Se with a binding energy of $E_b = 2.7 \pm 0.2 \, \text{eV}$ is presented, and is confirmed by first-principles calculations. Additionally, the simulations predict a significant signal originating from annihilation with the topological surface states and shows the feasibility to detect their spin-texture through the use of spin-polarized positron beams. △ Less

Submitted 8 September, 2016; v1 submitted 21 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. B 94, 115411 (2016)

Enhanced spin Seebeck effect signal due to spin-momentum locked topological surface states

Authors: Zilong Jiang, Cui-Zu Chang, Massoud Ramezani Masir, Chi Tang, Yadong Xu, Jagadeesh S. Moodera, Allan H. MacDonald, **g Shi

Abstract: Spin-momentum locking in protected surface states enables efficient electrical detection of magnon decay at a magnetic-insulator/topological-insulator heterojunction. Here we demonstrate this property using the spin Seebeck effect, i.e. measuring the transverse thermoelectric response to a temperature gradient across a thin film of yttrium iron garnet, an insulating ferrimagnet, and forming a hete… ▽ More Spin-momentum locking in protected surface states enables efficient electrical detection of magnon decay at a magnetic-insulator/topological-insulator heterojunction. Here we demonstrate this property using the spin Seebeck effect, i.e. measuring the transverse thermoelectric response to a temperature gradient across a thin film of yttrium iron garnet, an insulating ferrimagnet, and forming a heterojunction with (BixSb1-x)2Te3, a topological insulator. The non-equilibrium magnon population established at the interface can decay in part by interactions of magnons with electrons near the Fermi energy of the topological insulator. When this decay channel is made active by tuning (BixSb1-x)2Te3 to a bulk insulator, a large electromotive force emerges in the direction perpendicular to the in-plane magnetization of yttrium iron garnet. The enhanced, tunable spin Seebeck effect which occurs when the Fermi level lies in the bulk gap offers unique advantages over the usual spin Seebeck effect in metals and therefore opens up exciting possibilities in spintronics. △ Less

Submitted 30 March, 2016; originally announced March 2016.

Induced superconductivity and engineered Josephson tunneling devices in epitaxial (111)-oriented gold/vanadium heterostructures

Authors: Peng Wei, Ferhat Katmis, Cui-Zu Chang, Jagadeesh S. Moodera

Abstract: We report a unique experimental approach to create topological superconductors by inducing superconductivity into epitaxial metallic thin film with strong spin-orbit coupling. Utilizing molecular beam epitaxy technique under ultra-high vacuum condition, we are able to achieve (111) oriented single phase of gold (Au) thin film grown on a well-oriented vanadium (V) s-wave superconductor film with cl… ▽ More We report a unique experimental approach to create topological superconductors by inducing superconductivity into epitaxial metallic thin film with strong spin-orbit coupling. Utilizing molecular beam epitaxy technique under ultra-high vacuum condition, we are able to achieve (111) oriented single phase of gold (Au) thin film grown on a well-oriented vanadium (V) s-wave superconductor film with clean interface. We obtained atomically smooth Au thin films with thicknesses even down to below a nanometer showing near-ideal surface quality. The as-grown V/Au bilayer heterostructure exhibits superconducting transition at around 4 K. Clear Josephson tunneling and Andreev reflection are observed in S-I-S tunnel junctions fabricated from the epitaxial bi-layers. The barrier thickness dependent tunneling and the associated subharmonic gap structures (SGS) confirmed the induced superconductivity in Au (111), paving the way for engineering thin film heterostructure based p-wave superconductors and nano devices for Majorana fermion. △ Less

Submitted 27 January, 2016; originally announced January 2016.

Band structure of topological insulators from noise measurements in tunnel junctions

Authors: Juan Pedro Cascales, Isidoro Martınez, Ferhat Katmis, Cui-Zu Chang, Ruben Guerrero, Jagadeesh S. Moodera, Farkhad G. Aliev

Abstract: The unique properties of spin-polarized surface or edge states in topological insulators (TIs) make these quantum coherent systems interesting from the point of view of both fundamental physics and their implementation in low power spintronic devices. Here we present such a study in TIs, through tunneling and noise spectroscopy utilizing TI/Al$_2$O$_3$/Co tunnel junctions with bottom TI electrodes… ▽ More The unique properties of spin-polarized surface or edge states in topological insulators (TIs) make these quantum coherent systems interesting from the point of view of both fundamental physics and their implementation in low power spintronic devices. Here we present such a study in TIs, through tunneling and noise spectroscopy utilizing TI/Al$_2$O$_3$/Co tunnel junctions with bottom TI electrodes of either Bi$_2$Te$_3$ or Bi$_2$Se$_3$. We demonstrate that features related to the band structure of the TI materials show up in the tunneling conductance and even more clearly through low frequency noise measurements. The bias dependence of 1/f noise reveals peaks at specific energies corresponding to band structure features of the TI. TI tunnel junctions could thus simplify the study of the properties of such quantum coherent systems, that can further lead to the manipulation of their spin-polarized properties for technological purposes. △ Less

Submitted 4 January, 2016; originally announced January 2016.

Journal ref: Appl. Phys. Lett. 107, 252402 (2015)

Electric coupling in scanning SQUID measurements

Authors: Eric M. Spanton, Aaron J. Rosenberg, Yihua H. Wang, John R. Kirtley, Ferhat Katmis, Pablo Jarillo-Herrero, Jagadeesh S. Moodera, Kathryn A. Moler

Abstract: Scanning SQUID is a local magnetometer which can image flux through its pickup loop due to DC magnetic fields ($Φ$). Scanning SQUID can also measure a sample's magnetic response to an applied current ($dΦ/dI$) or voltage ($dΦ/dV$) using standard lock-in techniques. In this manuscript, we demonstrate that electric coupling between the scanning SQUID and a back gate-tuned, magnetic sample can lead t… ▽ More Scanning SQUID is a local magnetometer which can image flux through its pickup loop due to DC magnetic fields ($Φ$). Scanning SQUID can also measure a sample's magnetic response to an applied current ($dΦ/dI$) or voltage ($dΦ/dV$) using standard lock-in techniques. In this manuscript, we demonstrate that electric coupling between the scanning SQUID and a back gate-tuned, magnetic sample can lead to a gate-voltage dependent artifact when imaging $dΦ/dI$ or $dΦ/dV$. The electric coupling artifact results in $dΦ/dV$ and $dΦ/dI$ images which mimic the spatial variation of the static magnetic fields from the sample (e.g. ferromagnetic domains). In back-gated $EuS/Bi_2Se_3$ bilayers, we show that the electric coupling effect is important, and is responsible for the reported signal from chiral currents in Y.H. Wang, et al. (DOI: 10.1126/science.aaa0508). Previous scanning SQUID current imaging experiments are unaffected by this artifact, as they are either on non-magnetic samples or the spatial distribution of magnetism does not match the features observed in $dΦ/dI$. In conclusion, $dΦ/dI$ or $dΦ/dV$ imaging of magnetic, back-gated samples should only be applied and interpreted with great caution. △ Less

Submitted 17 December, 2015; v1 submitted 10 December, 2015; originally announced December 2015.

Comments: This is a comment on Y.H. Wang, et al. (DOI: 10.1126/science.aaa0508), which has been retracted (DOI: 10.1126/science.350.6267.1482-a)

Strong interfacial exchange field in the graphene/EuS heterostructure

Authors: Peng Wei, Sunwoo Lee, Florian Lemaitre, Lucas Pinel, Davide Cutaia, Wujoon Cha, Ferhat Katmis, Yu Zhu, Donald Heiman, James Hone, Jagadeesh S. Moodera, Ching-Tzu Chen

Abstract: Exploiting 2D materials for spintronic applications can potentially realize next-generation devices featuring low-power consumption and quantum operation capability. The magnetic exchange field (MEF) induced by an adjacent magnetic insulator enables efficient control of local spin generation and spin modulation in 2D devices without compromising the delicate material structures. Using graphene as… ▽ More Exploiting 2D materials for spintronic applications can potentially realize next-generation devices featuring low-power consumption and quantum operation capability. The magnetic exchange field (MEF) induced by an adjacent magnetic insulator enables efficient control of local spin generation and spin modulation in 2D devices without compromising the delicate material structures. Using graphene as a prototypical 2D system, we demonstrate that its coupling to the model magnetic insulator (EuS) produces a substantial MEF (> 14 T) with potential to reach hundreds of Tesla, which leads to orders-of-magnitude enhancement in the spin signal originated from Zeeman spin-Hall effect. Furthermore, the new ferromagnetic ground state of Dirac electrons resulting from the strong MEF may give rise to quantized spin-polarized edge transport. The MEF effect shown in our graphene/EuS devices therefore provides a key functionality for future spin logic and memory devices based on emerging 2D materials in classical and quantum information processing. △ Less

Submitted 28 April, 2016; v1 submitted 20 October, 2015; originally announced October 2015.

Journal ref: Nature Materials 15, 711-716 (2016)

Bounds on Nanoscale Nematicity in Single-Layer FeSe/SrTiO$_3$

Authors: Dennis Huang, Tatiana A. Webb, Shiang Fang, Can-Li Song, Cui-Zu Chang, Jagadeesh S. Moodera, Efthimios Kaxiras, Jennifer E. Hoffman

Abstract: We use scanning tunneling microscopy (STM) and quasiparticle interference (QPI) imaging to investigate the low-energy orbital texture of single-layer FeSe/SrTiO$_3$. We develop a $T$-matrix model of multi-orbital QPI to disentangle scattering intensities from Fe $3d_{xz}$ and $3d_{yz}$ bands, enabling the use of STM as a nanoscale detection tool of nematicity. By sampling multiple spatial regions… ▽ More We use scanning tunneling microscopy (STM) and quasiparticle interference (QPI) imaging to investigate the low-energy orbital texture of single-layer FeSe/SrTiO$_3$. We develop a $T$-matrix model of multi-orbital QPI to disentangle scattering intensities from Fe $3d_{xz}$ and $3d_{yz}$ bands, enabling the use of STM as a nanoscale detection tool of nematicity. By sampling multiple spatial regions of a single-layer FeSe/SrTiO$_3$ film, we quantitatively exclude static $xz/yz$ orbital ordering with domain size larger than $δr^2$ = 20 nm $\times$ 20 nm, $xz/yz$ Fermi wave vector difference larger than $δk$ = 0.014 $π$, and energy splitting larger than $δE$ = 3.5 meV. The lack of detectable ordering pinned around defects places qualitative constraints on models of fluctuating nematicity. △ Less

Submitted 18 March, 2016; v1 submitted 23 September, 2015; originally announced September 2015.

Comments: 11 pages, 13 figures

Journal ref: Phys. Rev. B 93, 125129 (2016)

Independent tuning of electronic properties and induced ferromagnetism in topological insulators with heterostructure approach

Authors: Zilong Jiang, Cui-Zu Chang, Chi Tang, Peng Wei, Jagadeesh S. Moodera, **g Shi

Abstract: The quantum anomalous Hall effect (QAHE) has been recently demonstrated in Cr- and V-doped three-dimensional topological insulators (TIs) at temperatures below 100 mK. In those materials, the spins of unfilled d-electrons in the transition metal dopants are exchange coupled to develop a long-range ferromagnetic order, which is essential for realizing QAHE. However, the addition of random dopants d… ▽ More The quantum anomalous Hall effect (QAHE) has been recently demonstrated in Cr- and V-doped three-dimensional topological insulators (TIs) at temperatures below 100 mK. In those materials, the spins of unfilled d-electrons in the transition metal dopants are exchange coupled to develop a long-range ferromagnetic order, which is essential for realizing QAHE. However, the addition of random dopants does not only introduce excess charge carriers that require readjusting the Bi/Sb ratio, but also unavoidably introduces paramagnetic spins that can adversely affect the chiral edge transport in QAHE. In this work, we show a heterostructure approach to independently tune the electronic and magnetic properties of the topological surface states in (BixSb1-x)2Te3 without resorting to random do** of transition metal elements. In heterostructures consisting of a thin (BixSb1-x)2Te3 TI film and yttrium iron garnet (YIG), a high Curie temperature (~ 550 K) magnetic insulator, we find that the TI surface in contact with YIG becomes ferromagnetic via proximity coupling which is revealed by the anomalous Hall effect (AHE). The Curie temperature of the magnetized TI surface ranges from 20 to 150 K but is uncorrelated with the Bi fraction x in (BixSb1-x)2Te3. In contrast, as x is varied, the AHE resistivity scales with the longitudinal resistivity. In this approach, we decouple the electronic properties from the induced ferromagnetism in TI. The independent optimization provides a pathway for realizing QAHE at higher temperatures, which is important for novel spintronic device applications. △ Less

Submitted 19 August, 2015; originally announced August 2015.

Comments: Accepted by Nano Letters

Observation of chiral currents at the magnetic domain boundary of a topological insulator

Authors: Y. H. Wang, J. R. Kirtley, F. Katmis, P. Jarillo-Herrero, J. S. Moodera, K. A. Moler

Abstract: A magnetic domain boundary on the surface of a three-dimensional topological insulator is predicted to host a chiral edge state, but direct demonstration is challenging. Here, we used a scanning superconducting quantum interference device to show that current in a magnetized EuS/Bi2Se3 heterostructure flows at the edge when the Fermi level is gate-tuned to the surface band gap. We further induced… ▽ More A magnetic domain boundary on the surface of a three-dimensional topological insulator is predicted to host a chiral edge state, but direct demonstration is challenging. Here, we used a scanning superconducting quantum interference device to show that current in a magnetized EuS/Bi2Se3 heterostructure flows at the edge when the Fermi level is gate-tuned to the surface band gap. We further induced micron-scale magnetic structures on the heterostructure, and detected a chiral edge current at the magnetic domain boundary. The chirality of the current was determined by magnetization of the surrounding domain and its magnitude by the local chemical potential rather than the applied current. Such magnetic structures, provide a platform for detecting topological magnetoelectric effects and may enable progress in quantum information processing and spintronics. △ Less

Submitted 14 August, 2015; originally announced August 2015.

Coherent ultrafast spin-dynamics probed in three dimensional topological insulators

Authors: F. Boschini, M. Mansurova, G. Mussler, J. Kampmeier, D. Grützmacher, L. Braun, F. Katmis, J. S. Moodera, C. Dallera, E. Carpene, C. Franz, M. Czerner, C. Heiliger, T. Kampfrath, M. Münzenberg

Abstract: Topological insulators are candidates to open up a novel route in spin based electronics. Different to traditional ferromagnetic materials, where the carrier spin-polarization and magnetization are based on the exchange interaction, the spin properties in topological insulators are based on the coupling of spin- and orbit interaction connected to its momentum. Specific ways to control the spin-pol… ▽ More Topological insulators are candidates to open up a novel route in spin based electronics. Different to traditional ferromagnetic materials, where the carrier spin-polarization and magnetization are based on the exchange interaction, the spin properties in topological insulators are based on the coupling of spin- and orbit interaction connected to its momentum. Specific ways to control the spin-polarization with light have been demonstrated: the energy momentum landscape of the Dirac cone provides spin-momentum locking of the charge current and its spin. The directionality of spin and momentum, as well as control with light has been demonstrated. Here we demonstrate a coherent femtosecond control of spin-polarization for states in the valence band at around the Dirac cone. △ Less

Submitted 8 June, 2015; originally announced June 2015.

Comments: 14 pages, 4 figures

Journal ref: Scientific Reports 5, 15304 (2015)

Zero-field dissipationless chiral edge transport and the nature of dissipation in the quantum anomalous Hall state

Authors: Cui-Zu Chang, Weiwei Zhao, Duk Y. Kim, Peng Wei, J. K. Jain, Chaoxing Liu, Moses H. W. Chan, Jagadeesh S. Moodera

Abstract: The quantum anomalous Hall (QAH) effect is predicted to possess, at zero magnetic field, chiral edge channels that conduct spin polarized current without dissipation. While edge channels have been observed in previous experimental studies of the QAH effect, their dissipationless nature at a zero magnetic field has not been convincingly demonstrated. By a comprehensive experimental study of the gat… ▽ More The quantum anomalous Hall (QAH) effect is predicted to possess, at zero magnetic field, chiral edge channels that conduct spin polarized current without dissipation. While edge channels have been observed in previous experimental studies of the QAH effect, their dissipationless nature at a zero magnetic field has not been convincingly demonstrated. By a comprehensive experimental study of the gate and temperature dependences of local and nonlocal magnetoresistance, we unambiguously establish the dissipationless edge transport. By studying the onset of dissipation, we also identify the origin of dissipative channels and clarify the surprising observation that the critical temperature of the QAH effect is two orders of magnitude smaller than the Curie temperature of ferromagnetism. △ Less

Submitted 4 July, 2015; v1 submitted 7 May, 2015; originally announced May 2015.

Comments: main text+supporting materials. This is the accepted version for PRL. Comments are welcome

Journal ref: PRL 115, 057206 (2015)

Inducing magnetism onto the surface of a topological crystalline insulator

Authors: Badih A. Assaf, Ferhat Katmis, Peng Wei, Cui-Zu Chang, Biswarup Satpati, Jagadeesh S. Moodera, Don Heiman

Abstract: Inducing magnetism onto a topological crystalline insulator (TCI) has been predicted to result in several novel quantum electromagnetic effects. This is a consequence of the highly strain-sensitive band topology of such symmetry-protected systems. We thus show that placing the TCI surface of SnTe in proximity to EuS, a ferromagnetic insulator, induces magnetism at the interface between SnTe and Eu… ▽ More Inducing magnetism onto a topological crystalline insulator (TCI) has been predicted to result in several novel quantum electromagnetic effects. This is a consequence of the highly strain-sensitive band topology of such symmetry-protected systems. We thus show that placing the TCI surface of SnTe in proximity to EuS, a ferromagnetic insulator, induces magnetism at the interface between SnTe and EuS and thus breaks time-reversal-symmetry in the TCI. Magnetotransport experiments on SnTe-EuS-SnTe trilayer devices reveal a hysteretic lowering of the resistance at the TCI surface that coincides with an increase in the density of magnetic domain walls. This additional conduction could be a signature of topologically-protected surface states within domain walls. Additionally, a hysteretic anomalous Hall effect reveals that the usual in-plane magnetic moment of the EuS layer is canted towards a perpendicular direction at the interface. These results are evidence of induced magnetism at the SnTe-EuS interfaces resulting in broken time-reversal symmetry in the TCI. △ Less

Submitted 23 April, 2015; originally announced April 2015.

Comments: Accepted for publication in Physical Review B

Revealing the Empty-State Electronic Structure of Single-Unit-Cell FeSe/SrTiO$_{3}$

Authors: Dennis Huang, Can-Li Song, Tatiana A. Webb, Shiang Fang, Cui-Zu Chang, Jagadeesh S. Moodera, Efthimios Kaxiras, Jennifer E. Hoffman

Abstract: We use scanning tunneling spectroscopy to investigate the filled and empty electronic states of superconducting single-unit-cell FeSe deposited on SrTiO$_3$(001). We map the momentum-space band structure by combining quasiparticle interference imaging with decay length spectroscopy. In addition to quantifying the filled-state bands, we discover a $Γ$-centered electron pocket 75 meV above the Fermi… ▽ More We use scanning tunneling spectroscopy to investigate the filled and empty electronic states of superconducting single-unit-cell FeSe deposited on SrTiO$_3$(001). We map the momentum-space band structure by combining quasiparticle interference imaging with decay length spectroscopy. In addition to quantifying the filled-state bands, we discover a $Γ$-centered electron pocket 75 meV above the Fermi energy. Our density functional theory calculations show the orbital nature of empty states at $Γ$ and suggest that the Se height is a key tuning parameter of their energies, with broad implications for electronic properties. △ Less

Submitted 7 July, 2015; v1 submitted 16 March, 2015; originally announced March 2015.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. Lett. 115, 017002 (2015)

High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator

Authors: Cui-Zu Chang, Weiwei Zhao, Duk Y. Kim, Haijun Zhang, Badih A. Assaf, Don Heiman, Shou-Cheng Zhang, Chaoxing Liu, Moses H. W. Chan, Jagadeesh S. Moodera

Abstract: The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two dimensional electron layer under a strong magnetic field. The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon as the QH effect, whereas its physical origin relies on the intrinsic spin-orbi… ▽ More The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two dimensional electron layer under a strong magnetic field. The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon as the QH effect, whereas its physical origin relies on the intrinsic spin-orbit coupling and ferromagnetism.Here we report the experimental observation of the QAH state in V-doped (Bi,Sb)2Te3 films with the zero-field longitudinal resistance down to 0.00013+-0.00007h/e2 (~3.35+-1.76 ohm), Hall conductance reaching 0.9998+-0.0006e2/h and the Hall angle becoming as high as 89.993+-0.004degree at T=25mK. Further advantage of this system comes from the fact that it is a hard ferromagnet with a large coercive field (Hc>1.0T) and a relative high Curie temperature. This realization of robust QAH state in hard FMTIs is a major step towards dissipationless electronic applications without external fields. △ Less

Submitted 16 January, 2015; v1 submitted 11 December, 2014; originally announced December 2014.

Comments: 16 pages, 4 figures, this is the final version, accepted by Nature Materials, forthcoming

Journal ref: Nature Materials 14, 473(2015)

Breaking time reversal symmetry in topological insulators

Authors: Cui-Zu Chang, Peng Wei, Jagadeesh. S. Moodera

Abstract: A wide class of materials that were discovered to carry a topologically protected phase order has led to a highly active area of research called topological insulators. This phenomenon has radically changed our thinking because of their robust quantum coherent behavior showing two-dimensional Dirac-type metallic surface states and simultaneously insulating bulk states. The Dirac SSs are induced by… ▽ More A wide class of materials that were discovered to carry a topologically protected phase order has led to a highly active area of research called topological insulators. This phenomenon has radically changed our thinking because of their robust quantum coherent behavior showing two-dimensional Dirac-type metallic surface states and simultaneously insulating bulk states. The Dirac SSs are induced by the strong spin-orbit coupling as well as protected by the time reversal symmetry. Breaking TRS in a TI with ferromagnetic perturbation can lead to many exotic quantum phenomena, such as the quantum anomalous Hall effect, topological magnetoelectric effect, as well as image magnetic monopole. This article presents an overview of the current status of TRS breaking in TIs and outlines the prospects for future studies △ Less

Submitted 18 October, 2014; originally announced October 2014.

Comments: 14 pages, 6 figures, invited review paper for MRS Bulletin

Journal ref: MRS Bulletin, 2014, 39:867-872

Proposal for a phase-coherent thermoelectric transistor

Authors: F. Giazotto, J. W. A. Robinson, J. S. Moodera, F. S. Bergeret

Abstract: Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer a solution since their near perfect electron-hole symmetry leads to a negligible thermoelectric response; however, here we demonstrate theoretically a supercond… ▽ More Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer a solution since their near perfect electron-hole symmetry leads to a negligible thermoelectric response; however, here we demonstrate theoretically a superconducting thermoelectric transistor which offers unparalleled figures of merit of up to $\sim 45$ and Seebeck coefficients as large as a few mV/K at sub-Kelvin temperatures. The device is also phase-tunable meaning its thermoelectric response for power generation can be precisely controlled with a small magnetic field. Our concept is based on a superconductor-normal metal-superconductor interferometer in which the normal metal weak-link is tunnel coupled to a ferromagnetic insulator and a Zeeman split superconductor. Upon application of an external magnetic flux, the interferometer enables phase-coherent manipulation of thermoelectric properties whilst offering efficiencies which approach the Carnot limit. △ Less

Submitted 9 July, 2014; v1 submitted 3 May, 2014; originally announced May 2014.

Comments: 4.5 pages, 4 color figures, rebuttal version of the manuscript

Journal ref: Appl. Phys. Lett. 105, 062602 (2014)