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Influence of ferroelastic domain walls on thermal conductivity
Authors:
P. Limelette,
M. El Kamily,
H. Aramberri,
F. Giovannelli,
M. Royo,
R. Rurali,
I. Monot-Laffez,
J. Íñiguez,
G. F. Nataf
Abstract:
Enabling on-demand control of heat flow is key for the development of next-generation electronic devices, solid-state heat pumps, and thermal logic. However, precise and agile tuning of the relevant microscopic material parameters for adjusting thermal conductivities remains elusive. Here, we study several single crystals of lanthanum aluminate (LaAlO$_{3}$) with different domain structures and sh…
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Enabling on-demand control of heat flow is key for the development of next-generation electronic devices, solid-state heat pumps, and thermal logic. However, precise and agile tuning of the relevant microscopic material parameters for adjusting thermal conductivities remains elusive. Here, we study several single crystals of lanthanum aluminate (LaAlO$_{3}$) with different domain structures and show that ferroelastic domain walls behave as boundaries that act like efficient controllers to govern thermal conductivity. At low temperature (3 K), we demonstrate a fivefold reduction in thermal conductivity induced by domain walls orthogonal to the heat flow and a twofold reduction when they are parallel to the heat flow. Atomistic calculations fully support this experimental observation. By breaking down phonon scattering mechanisms, we also analyze the temperature dependence of the thermal conductivity to derive a quantitative relation between thermal conductivity variations and domain wall organization and density.
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Submitted 20 October, 2023;
originally announced October 2023.
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Dense and single-phase KTaO$_{3}$ ceramics obtained by spark plasma sintering
Authors:
L. Féger,
F. Giovannelli,
G. Vats,
J. Alves,
B. Pignon,
E. K. H. Salje,
I. Monot-Laffez,
G. F. Nataf
Abstract:
Potassium tantalate (KTaO$_{3}$) is a promising material for dielectric applications at low temperature. However, dense and single-phase ceramics cannot be obtained by conventional sintering because of the evaporation of potassium that leads to secondary phases. Here, we demonstrate that spark plasma sintering is a suitable method to obtain dense and single-phase KTaO$_{3}$ ceramics, by optimizing…
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Potassium tantalate (KTaO$_{3}$) is a promising material for dielectric applications at low temperature. However, dense and single-phase ceramics cannot be obtained by conventional sintering because of the evaporation of potassium that leads to secondary phases. Here, we demonstrate that spark plasma sintering is a suitable method to obtain dense and single-phase KTaO$_{3}$ ceramics, by optimizing three parameters: initial composition, temperature, and pressure. A 2 mol% K-excess in the precursors leads to a large grain growth and dense single-phase ceramics. Without K-excess, a small amount of secondary phase (K$_{6}$Ta$_{10.8}$O$_{30}$) is observed at the surface but can be removed by polishing. At 10 K, the dielectric permittivity is 4 times higher in the ceramic from the 2 mol% K-excess powder, because of the larger grain size. The thermal conductivity decreases with decreasing grain size and stays above the thermal conductivity of KNbO$_{3}$ ceramics.
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Submitted 28 August, 2023;
originally announced August 2023.
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Influence of cation vacancy concentrations on ultra-low thermal conductivity in $(1-x)$BiVO$_4$-$x$Bi$_{2/3}$MoO$_4$ scheelite solid solutions
Authors:
Guillaume F. Nataf,
Hicham Ait Laasri,
Damien Brault,
Tatiana Chartier,
Chalit Ya,
Fabian Delorme,
Isabelle Monot-Laffez,
Fabien Giovannelli
Abstract:
Bismuth vanadate - bismuth molybdate solid-solution was prepared to elaborate ceramics with different amounts of cation vacancies. Dense ceramics with similar microstructures were obtained and the evolution of their melting point, specific heat, thermal diffusivity, and conductivity as a function of the amount of vacancy was evaluated. At room temperature, the thermal conductivity decreases from 1…
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Bismuth vanadate - bismuth molybdate solid-solution was prepared to elaborate ceramics with different amounts of cation vacancies. Dense ceramics with similar microstructures were obtained and the evolution of their melting point, specific heat, thermal diffusivity, and conductivity as a function of the amount of vacancy was evaluated. At room temperature, the thermal conductivity decreases from 1.74 W m$^{-1}$ K$^{-1}$ for BiVO$_{4}$ (x=0) to 1.12 W m$^{-1}$ K$^{-1}$ for Bi$_{0.867}$$\square$$_{0.133}$Mo$_{0.4}$V$_{0.6}$O$_{4}$ (x=0.4). Moreover, we show that a very small amount of vacancy (1.7%, x=0.05) is enough to provide a large decrease in thermal conductivity by more than 15%, in agreement with a mass fluctuation scattering model. However, the temperature of the melting point also decreases with increasing amount of vacancy. Our results suggest adding only a very small amount of vacancy as the best strategy to obtain superior materials for thermal barriers and thermoelectric devices, with ultra-low thermal conductivity and high-temperature stability.
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Submitted 27 July, 2023;
originally announced July 2023.
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Evidence for Intra-Unit-Cell magnetic order in Bi2Sr2CaCu2O8+d
Authors:
S. De Almeida-Didry,
Y. Sidis,
V. Baledent,
F. Giovannelli,
I. Monot-Laffez,
P. Bourges
Abstract:
Polarized elastic neutron scattering measurements have been performed in the bilayer copper oxide system Bi2Sr2CaCu2O8+d, providing evidence for an intra unit cell (IUC) magnetic order inside the pseudo-gap state. That shows time reversal symmetry breaking in that state as already reported in Bi2Sr2CaCu2O8+d through dichroism in circularly polarized photoemission experiments. The magnetic order di…
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Polarized elastic neutron scattering measurements have been performed in the bilayer copper oxide system Bi2Sr2CaCu2O8+d, providing evidence for an intra unit cell (IUC) magnetic order inside the pseudo-gap state. That shows time reversal symmetry breaking in that state as already reported in Bi2Sr2CaCu2O8+d through dichroism in circularly polarized photoemission experiments. The magnetic order displays the same characteristic features as the one previously reported for monolayer HgBa2CuO4+d and bilayer YBa2Cu3O6+x, demonstrating that this genuine phase is ubiquitous of the pseudo-gap of high temperature copper oxide materials.
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Submitted 4 July, 2012;
originally announced July 2012.
