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Effects of charge noise on a pulse-gated singlet-triplet $S-T_-$ qubit
Authors:
Zhenyi Qi,
X. Wu,
D. R. Ward,
J. R. Prance,
Dohun Kim,
John King Gamble,
R. T. Mohr,
Zhan Shi,
D. E. Savage,
M. G. Lagally,
M. A. Eriksson,
Mark Friesen,
S. N. Coppersmith,
M. G. Vavilov
Abstract:
We study the dynamics of a pulse-gated semiconductor double quantum dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from c…
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We study the dynamics of a pulse-gated semiconductor double quantum dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations are low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there is only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory agrees well with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate.
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Submitted 15 June, 2017; v1 submitted 24 January, 2017;
originally announced January 2017.
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Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane
Authors:
T. J. Knapp,
R. T. Mohr,
Yize Stephanie Li,
Brandur Thorgrimsson,
Ryan H. Foote,
Xian Wu,
Daniel R. Ward,
D. E. Savage,
M. G. Lagally,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual substrates. The strain grading process necessarily introduces misfit dislocations into a heterostructure, and these defects introduce lateral strain inhomogeneities, m…
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We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual substrates. The strain grading process necessarily introduces misfit dislocations into a heterostructure, and these defects introduce lateral strain inhomogeneities, mosaic tilt, and threading dislocations. The use of a SiGe nanomembrane as the virtual substrate enables the strain relaxation to be entirely elastic, eliminating the need for misfit dislocations. However, in this approach the formation of the heterostructure is more complicated, involving two separate epitaxial growth procedures separated by a wet-transfer process that results in a buried non-epitaxial interface 625 nm from the quantum dot. We demonstrate that in spite of this buried interface in close proximity to the device, a double quantum dot can be formed that is controllable enough to enable tuning of the inter-dot tunnel coupling, the identification of spin states, and the measurement of a singlet-to-triplet transition as a function of an applied magnetic field.
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Submitted 29 October, 2015;
originally announced October 2015.
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Two-axis control of a singlet-triplet qubit with an integrated micromagnet
Authors:
Xian Wu,
D. R. Ward,
J. R. Prance,
Dohun Kim,
John King Gamble,
R. T. Mohr,
Zhan Shi,
D. E. Savage,
M. G. Lagally,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
The qubit is the fundamental building block of a quantum computer. We fabricate a qubit in a silicon double quantum dot with an integrated micromagnet in which the qubit basis states are the singlet state and the spin-zero triplet state of two electrons. Because of the micro magnet, the magnetic field difference $ΔB$ between the two sides of the double dot is large enough to enable the achievement…
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The qubit is the fundamental building block of a quantum computer. We fabricate a qubit in a silicon double quantum dot with an integrated micromagnet in which the qubit basis states are the singlet state and the spin-zero triplet state of two electrons. Because of the micro magnet, the magnetic field difference $ΔB$ between the two sides of the double dot is large enough to enable the achievement of coherent rotation of the qubit's Bloch vector about two different axes of the Bloch sphere. By measuring the decay of the quantum oscillations, the inhomogeneous spin coherence time $T_{2}^{*}$ is determined. By measuring $T_{2}^{*}$ at many different values of the exchange coupling $J$ and at two different values of $ΔB$, we provide evidence that the micromagnet does not limit decoherence, with the dominant limits on $T_{2}^{*}$ arising from charge noise and from coupling to nuclear spins.
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Submitted 24 November, 2014; v1 submitted 28 February, 2014;
originally announced March 2014.
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Coherent Quantum Oscillations in a Silicon Charge Qubit
Authors:
Zhan Shi,
C. B. Simmons,
Daniel. R. Ward,
J. R. Prance,
R. T. Mohr,
Teck Seng Koh,
John King Gamble,
Xian. Wu,
D. E. Savage,
M. G. Lagally,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated b…
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Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated by detuning noise(charge noise that changes the asymmetry of the qubit's double-well potential). In the regime with the shortest T2*, applying a charge-echo pulse sequence increases the measured inhomogeneous decoherence time from 127ps to 760ps, demonstrating that low-frequency noise processes are an important dephasing mechanism.
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Submitted 17 July, 2013; v1 submitted 2 August, 2012;
originally announced August 2012.
