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Nonequilibrium theory of the conversion-efficiency limit of solar cells including thermalization and extraction of carriers
Authors:
Kenji Kamide,
Toshimitsu Mochizuki,
Hidefumi Akiyama,
Hidetaka Takato
Abstract:
The ideal solar cell conversion efficiency limit known as the Shockley-Queisser (SQ) limit, which is based on a detailed balance between absorption and radiation, has long been a target for solar cell researchers. While the theory for this limit uses several assumptions, the requirements in real devices have not been discussed fully. Given the current situation in which research-level cell efficie…
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The ideal solar cell conversion efficiency limit known as the Shockley-Queisser (SQ) limit, which is based on a detailed balance between absorption and radiation, has long been a target for solar cell researchers. While the theory for this limit uses several assumptions, the requirements in real devices have not been discussed fully. Given the current situation in which research-level cell efficiencies are approaching the SQ limit, a quantitative argument with regard to these requirements is worthwhile in terms of understanding of the remaining loss mechanisms in current devices and the device characteristics of solar cells that are operating outside the detailed balance conditions. Here we examine two basic assumptions: (1) that the photo-generated carriers lose their kinetic energy via phonon emission in a moment (fast thermalization), and (2) that the photo-generated carriers are extracted into carrier reservoirs in a moment (fast extraction). Using a model that accounts for the carrier relaxation and extraction dynamics, we reformulate the nonequilibrium theory for solar cells in a manner that covers both the equilibrium and nonequilibrium regimes. Using a simple planar solar cell as an example, we address the parameter regime in terms of the carrier extraction time and then consider where the conventional SQ theory applies and what could happen outside the applicable range.
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Submitted 5 February, 2018;
originally announced February 2018.
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Sub-Cycle Optical Response Caused by Dressed State with Phase-Locked Wavefunctions
Authors:
K. Uchida,
T. Otobe,
T. Mochizuki,
C. Kim,
M. Yoshita,
H. Akiyama,
L. N. Pfeiffer,
K. W. West,
K. Tanaka,
H. Hirori
Abstract:
The coherent interaction of light with matter imprints the phase information of the light field on the wavefunction of the photon-dressed electronic state. Driving electric field, together with a stable phase that is associated with the optical probe pulses, enables the role of the dressed state in the optical response to be investigated. We observed optical absorption strengths modulated on a sub…
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The coherent interaction of light with matter imprints the phase information of the light field on the wavefunction of the photon-dressed electronic state. Driving electric field, together with a stable phase that is associated with the optical probe pulses, enables the role of the dressed state in the optical response to be investigated. We observed optical absorption strengths modulated on a sub-cycle timescale in a GaAs quantum well in the presence of a multi-cycle terahertz driving pulse using a near-infrared probe pulse. The measurements were in good agreement with the analytical formula that accounts for the optical susceptibilities caused by the dressed state of excitons, which indicates that the output probe intensity was coherently reshaped by the excitonic sideband emissions.
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Submitted 21 November, 2016;
originally announced November 2016.
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Ultrafast near infrared photoinduced absorption in a multiferroic single crystal of bismuth ferrite
Authors:
Eiichi Matsubara,
Takeshi Mochizuki,
Masaya Nagai,
Toshimitsu Ito,
Masaaki Ashida
Abstract:
We studied the ultrafast third-order optical nonlinearity in a single crystal of multiferroic bismuth ferrite (BiFeO3) in the near-infrared range of 0.5-1.0 eV, where the material is fundamentally transparent,at room temperature. With pump pulses at 1.55 eV, which is off-resonant to the strong inter-band charge transfer (CT) transition, we observed instantaneous transient absorption with pencil-li…
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We studied the ultrafast third-order optical nonlinearity in a single crystal of multiferroic bismuth ferrite (BiFeO3) in the near-infrared range of 0.5-1.0 eV, where the material is fundamentally transparent,at room temperature. With pump pulses at 1.55 eV, which is off-resonant to the strong inter-band charge transfer (CT) transition, we observed instantaneous transient absorption with pencil-like temporal profile originating from the two-photon CT transition from the oxygen 2p to the iron 3p levels. In contrast, under pum** with 3.10-eV photons, the pencil-like absorption change was not observed but decay profiles showed longer time constants. Although the two-photon absorption coefficient is estimated to be 1.5 cm/GW, which is ten (hundred) times smaller than that of two(one)-dimensional cuprates, it is larger than those of common semiconductors such as ZnSe and GaAs at the optical communication wavelength.
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Submitted 31 March, 2015;
originally announced March 2015.
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Large Enhancement of the Photoluminescence Emission of Photoexcited Undoped GaAs Quantum Wells Induced by an Intense Single-Cycle Terahertz Pulse
Authors:
K. Shinokita,
H. Hirori,
K. Tanaka,
T. Mochizuki,
C. Kim,
H. Akiyama,
L. N. Pfeiffer,
K. W. West
Abstract:
Intense terahetz (THz) pulses induce a photoluminescence (PL) flash from undoped high-quality GaAs/AlGaAs quantum wells under continuous wave laser excitation. The number of excitons increases 10000-fold from that of the steady state under only laser excitation. The THz electric field dependence and the relaxation dynamics of the PL flash intensity suggest that the strong electric field of the THz…
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Intense terahetz (THz) pulses induce a photoluminescence (PL) flash from undoped high-quality GaAs/AlGaAs quantum wells under continuous wave laser excitation. The number of excitons increases 10000-fold from that of the steady state under only laser excitation. The THz electric field dependence and the relaxation dynamics of the PL flash intensity suggest that the strong electric field of the THz pulse ionizes impurity states during the one-picosecond period of the THz pulse and release carriers from a giant reservoir containing impurity states in the AlGaAs layers.
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Submitted 15 July, 2013;
originally announced July 2013.
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Evidence for Two-Dimensional Spin-Glass Ordering in Submonolayer Fe Films on Cleaved InAs Surfaces
Authors:
Toshimitsu Mochizuki,
Ryuichi Masutomi,
Tohru Okamoto
Abstract:
Magnetotransport measurements have been performed on two-dimensional electron gases formed at InAs(110) surfaces covered with a submonolayer of Fe. Hysteresis in the magnetoresistance, a difference in remanent magnetoresistance between zero-field-cooling procedures and field-cooling procedures, and logarithmic time-dependent relaxation after magnetic field sweep are clearly observed at 1.7 K for…
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Magnetotransport measurements have been performed on two-dimensional electron gases formed at InAs(110) surfaces covered with a submonolayer of Fe. Hysteresis in the magnetoresistance, a difference in remanent magnetoresistance between zero-field-cooling procedures and field-cooling procedures, and logarithmic time-dependent relaxation after magnetic field sweep are clearly observed at 1.7 K for a coverage of 0.42 monolayer. These features are associated with spin-glass ordering in the Fe film.
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Submitted 4 January, 2009; v1 submitted 24 October, 2008;
originally announced October 2008.
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Alkali-metal-induced Fermi level and two dimensional electrons at cleaved InAs(110) surfaces
Authors:
Masaaki Minowa,
Ryuichi Masutomi,
Toshimitsu Mochizuki,
Tohru Okamoto
Abstract:
Low-temperature Hall measurements have been performed on two-dimensional electron gases (2DEGs) induced by deposition of Cs or Na on in situ cleaved surfaces of p-type InAs. The surface donor level, at which the Fermi energy of the 2DEG is pinned, is calculated from the observed saturation surface electron density using a surface potential determined self-consistently. The results are compared t…
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Low-temperature Hall measurements have been performed on two-dimensional electron gases (2DEGs) induced by deposition of Cs or Na on in situ cleaved surfaces of p-type InAs. The surface donor level, at which the Fermi energy of the 2DEG is pinned, is calculated from the observed saturation surface electron density using a surface potential determined self-consistently. The results are compared to those of previous photoelectron spectroscopy measurements.
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Submitted 3 June, 2008; v1 submitted 31 March, 2008;
originally announced March 2008.
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Quantum Hall effect at cleaved InSb surfaces and low-temperature annealing effect
Authors:
Ryuichi Masutomi,
Masayuki Hio,
Toshimitsu Mochizuki,
Tohru Okamoto
Abstract:
We have performed low-temperature in-plane magnetotransport measurements on two-dimensional electron systems induced by deposition of Ag at {\it in situ} cleaved surfaces of {\it p}-type InSb. The quantum Hall effect was observed even at low magnetic fields around 2 T. The surface electron density and the electron mobility exhibit strong dependence on the Ag-coverage and the annealing temperatur…
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We have performed low-temperature in-plane magnetotransport measurements on two-dimensional electron systems induced by deposition of Ag at {\it in situ} cleaved surfaces of {\it p}-type InSb. The quantum Hall effect was observed even at low magnetic fields around 2 T. The surface electron density and the electron mobility exhibit strong dependence on the Ag-coverage and the annealing temperature in the range of 15-40 K. The annealing effect suggests that the surface morphology strongly affects the properties of the two-dimensional electron systems.
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Submitted 6 April, 2007; v1 submitted 26 March, 2007;
originally announced March 2007.
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Two-dimensional electrons at a cleaved semiconductor surface: Observation of the quantum Hall effect
Authors:
Yukihide Tsuji,
Toshimitsu Mochizuki,
Tohru Okamoto
Abstract:
Low-temperature in-plane magnetotransport measurements have been performed on adsorbate-induced electron systems formed at in-situ cleaved surfaces of p-type InAs. The Ag-coverage dependence of the surface electron density strongly supports a simple model based on a surface donor level lying above the conduction band minimum. The observations of the quantized Hall resistance and zero longitudina…
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Low-temperature in-plane magnetotransport measurements have been performed on adsorbate-induced electron systems formed at in-situ cleaved surfaces of p-type InAs. The Ag-coverage dependence of the surface electron density strongly supports a simple model based on a surface donor level lying above the conduction band minimum. The observations of the quantized Hall resistance and zero longitudinal resistivity demonstrate the perfect two-dimensionality of the surface electron system. We also observed the Rashba effect due to the strong asymmetry of the confining potential well.
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Submitted 6 July, 2005; v1 submitted 6 July, 2005;
originally announced July 2005.
