Ultrafast Optical Control of Rashba Interactions in a TMDC Heterostructure
Authors:
Henry Mittenzwey,
Abhijeet Kumar,
Raghav Dhingra,
Kenji Watanabe,
Takashi Taniguchi,
Cornelius Gahl,
Kirill I. Bolotin,
Malte Selig,
Andreas Knorr
Abstract:
We investigate spin relaxation dynamics of interlayer excitons in a MoSe2/MoS2 heterostructure induced by the Rashba effect. In such a system, Rashba interactions arise from an out-of-plane electric field due to photo-generated interlayer excitons inducing a phonon-assisted intravalley spin relaxation. We develop a theoretical description based on a microscopic approach to quantify the magnitude o…
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We investigate spin relaxation dynamics of interlayer excitons in a MoSe2/MoS2 heterostructure induced by the Rashba effect. In such a system, Rashba interactions arise from an out-of-plane electric field due to photo-generated interlayer excitons inducing a phonon-assisted intravalley spin relaxation. We develop a theoretical description based on a microscopic approach to quantify the magnitude of Rashba interactions and test these predictions via time-resolved Kerr rotation measurements. In agreement with the calculations, we find that the Rashba-induced intravalley spin mixing becomes the dominating spin relaxation channel above T = 50 K. Our work identifies a previously unexplored spin-depolarization channel in heterostructures which can be used for ultrafast spin manipulation.
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Submitted 6 June, 2024;
originally announced June 2024.
Time-domain observation of interlayer exciton formation and thermalization in a MoSe$_2$/WSe$_2$ heterostructure
Authors:
Veronica R. Policht,
Henry Mittenzwey,
Oleg Dogadov,
Manuel Katzer,
Andrea Villa,
Qiuyang Li,
Benjamin Kaiser,
Aaron M. Ross,
Francesco Scotognella,
Xiaoyang Zhu,
Andreas Knorr,
Malte Selig,
Giulio Cerullo,
Stefano Dal Conte
Abstract:
Vertical heterostructures (HS) of transition metal dichalcogenides (TMDs) host interlayer excitons (ILX), with electrons and holes residing in different layers. With respect to their intralayer counterparts, ILX feature much longer lifetimes and diffusion lengths, paving the way to excitonic optoelectronic devices operating at room temperature. While the recombination dynamics of ILX has been inte…
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Vertical heterostructures (HS) of transition metal dichalcogenides (TMDs) host interlayer excitons (ILX), with electrons and holes residing in different layers. With respect to their intralayer counterparts, ILX feature much longer lifetimes and diffusion lengths, paving the way to excitonic optoelectronic devices operating at room temperature. While the recombination dynamics of ILX has been intensively studied, the formation process and its underlying physical mechanisms are still largely unexplored. Here we use ultrafast transient absorption spectroscopy with a white-light probe, spanning both intralayer and interlayer exciton resonances, to simultaneously capture and time-resolve interlayer charge transfer and ILX formation dynamics in a MoSe$_2$/WSe$_2$ HS. We find that the ILX formation timescale is nearly an order of magnitude (~1 ps) longer than the interlayer charge transfer time (~100 fs). Microscopic calculations attribute the relative delay to an interplay between a phonon-assisted interlayer exciton cascade and subsequent cooling processes, and excitonic wave-function overlap. Our results provide an explanation to the efficient photocurrent generation observed in optoelectronic devices based on TMD HS, as the ILX have an opportunity to dissociate during their thermalization process.
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Submitted 7 April, 2023;
originally announced April 2023.
