Showing 1–49 of 49 results for author: Misra, S

Enhancing Membrane-Based Scanning Force Microscopy Through an Optical Cavity

Authors: Thomas Gisler, David Hälg, Vincent Dumont, Shobhna Misra, Letizia Catalini, Eric C. Langman, Albert Schliesser, Christian L. Degen, Alexander Eichler

Abstract: The new generation of strained silicon nitride resonators harbors great promise for scanning force microscopy, especially when combined with the extensive toolbox of cavity optomechanics. However, accessing a mechanical resonator inside an optical cavity with a scanning tip is challenging. Here, we experimentally demonstrate a cavity-based scanning force microscope based on a silicon nitride membr… ▽ More The new generation of strained silicon nitride resonators harbors great promise for scanning force microscopy, especially when combined with the extensive toolbox of cavity optomechanics. However, accessing a mechanical resonator inside an optical cavity with a scanning tip is challenging. Here, we experimentally demonstrate a cavity-based scanning force microscope based on a silicon nitride membrane sensor. We overcome geometric constraints by making use of the extended nature of the mechanical resonator normal modes, which allows us to spatially separate the scanning and readout sites of the membrane. Our microscope is geared towards low-temperature applications in the zeptonewton regime, such as nanoscale nuclear spin detection and imaging. △ Less

Submitted 11 June, 2024; originally announced June 2024.

Comments: 10 pages, 7 figures

Giant Hyperfine Interaction between a Dark Exciton Condensate and Nuclei

Authors: Amit Jash, Michael Stern, Subhradeep Misra, Vladimir Umansky, Israel Bar Joseph

Abstract: We study the interaction of a dark exciton Bose-Einstein condensate with the nuclei in GaAs/AlGaAs coupled quantum wells and find clear evidence for nuclear polarization buildup that accompanies the appearance of the condensate. We show that the nuclei are polarized throughout the mesa area, extending to regions which are far away from the photoexcitation area, and persisting for seconds after the… ▽ More We study the interaction of a dark exciton Bose-Einstein condensate with the nuclei in GaAs/AlGaAs coupled quantum wells and find clear evidence for nuclear polarization buildup that accompanies the appearance of the condensate. We show that the nuclei are polarized throughout the mesa area, extending to regions which are far away from the photoexcitation area, and persisting for seconds after the excitation is switched off. Photoluminescence measurements in the presence of RF radiation reveal that the hyperfine interaction between the nuclear and electron spins is enhanced by two orders of magnitude. We suggest that this large enhancement manifests the collective nature of the N-excitons condensate, which amplifies the interaction by a factor of sqrt{N}. △ Less

Submitted 12 May, 2024; v1 submitted 6 May, 2024; originally announced May 2024.

Implementation of the bilayer Hubbard model in a moiré heterostructure

Authors: Borislav Polovnikov, Johannes Scherzer, Subhradeep Misra, Henning Schlömer, Julian Trapp, Xin Huang, Christian Mohl, Zhijie Li, Jonas Göser, Jonathan Förste, Ismail Bilgin, Kenji Watanabe, Takashi Taniguchi, Annabelle Bohrdt, Fabian Grusdt, Anvar S. Baimuratov, Alexander Högele

Abstract: Moiré materials provide a unique platform for studies of correlated many-body physics of the Fermi-Hubbard model on triangular spin-charge lattices. Bilayer Hubbard models are of particular significance with regard to the physics of Mott insulating states and their relation to unconventional superconductivity, yet their experimental implementation in moiré systems has so far remained elusive. Here… ▽ More Moiré materials provide a unique platform for studies of correlated many-body physics of the Fermi-Hubbard model on triangular spin-charge lattices. Bilayer Hubbard models are of particular significance with regard to the physics of Mott insulating states and their relation to unconventional superconductivity, yet their experimental implementation in moiré systems has so far remained elusive. Here, we demonstrate the realization of a staggered bilayer triangular lattice of electrons in an antiparallel MoSe$_{2}$/WS$_{2}$ heterostructure. The bilayer lattice emerges due to strong electron confinement in the moiré potential minima and the near-resonant alignment of conduction band edges in MoSe$_{2}$ and WS$_{2}$. As a result, charge filling proceeds layer-by-layer, with the first and second electron per moiré cell consecutively occupying first the MoSe$_{2}$ and then the WS$_{2}$ layer. We describe the observed charging sequence by an electrostatic model and provide experimental evidence of spin correlations on the vertically offset and laterally staggered bilayer lattice, yielding absolute exciton Landé factors as high as $600$ at lowest temperatures. The bilayer character of the implemented spin-charge lattice allows for electrostatic tunability of Ruderman-Kittel-Kasuya-Yosida magnetism, and establishes antiparallel MoSe$_{2}$/WS$_{2}$ heterostructures as a viable platform for studies of bilayer Hubbard model physics with exotic magnetic phases on frustrated lattices. △ Less

Submitted 8 April, 2024; originally announced April 2024.

Direct Fabrication of Atomically Defined Pores in MXenes

Authors: Matthew G. Boebinger, Dundar E. Yilmaz, Ayana Ghosh, Sudhajit Misra, Tyler S. Mathis, Sergei V. Kalinin, Stephen Jesse, Yury Gogotsi, Adri C. T. van Duin, Raymond R. Unocic

Abstract: Controlled fabrication of nanopores in atomically thin two-dimensional material offers the means to create robust membranes needed for ion transport, nanofiltration, and DNA sensing. Techniques for creating nanopores have relied upon either plasma etching or direct irradiation using electrons or ions; however, aberration-corrected scanning transmission electron microscopy (STEM) offers the advanta… ▽ More Controlled fabrication of nanopores in atomically thin two-dimensional material offers the means to create robust membranes needed for ion transport, nanofiltration, and DNA sensing. Techniques for creating nanopores have relied upon either plasma etching or direct irradiation using electrons or ions; however, aberration-corrected scanning transmission electron microscopy (STEM) offers the advantage of combining a highly energetic, sub-angstrom sized electron beam for atomic manipulation along with atomic resolution imaging. Here, we utilize a method for automated nanopore fabrication with real-time atomic visualization to enhance our mechanistic understanding of beam-induced transformations. Additionally, an electron beam simulation technique, Electron-Beam Simulator (E-BeamSim) was developed to observe the atomic movements and interactions resulting from electron beam irradiation. Using the 2D MXene Ti3C2Tx, we explore the influence of temperature on nanopore fabrication by tracking atomic transformation pathways and find that at room temperature, electron beam irradiation induces random displacement of atoms and results in a pileup of titanium atoms at the nanopore edge. This pileup was confirmed and demonstrated in E-BeamSim simulations around the small, milled area in the MXene monolayer. At elevated temperatures, the surface functional groups on MXene are effectively removed, and the mobility of atoms increases, which results in atomic transformations that lead to the selective removal of atoms layer by layer. Through controllable manufacture using e-beam milling fabrication, the production and then characterization of the fabricated defects can be better understood for future work. This work can lead to the development of defect engineering techniques within functionalized MXene layers. △ Less

Submitted 29 November, 2023; originally announced November 2023.

Comments: Experimental and simulations on the electron beam interactions with MXene monolayers to form nanopores as a function of temperature

Magnetic Tunnel Junction Random Number Generators Applied to Dynamically Tuned Probability Trees Driven by Spin Orbit Torque

Authors: Andrew Maicke, Jared Arzate, Samuel Liu, Jaesuk Kwon, J. Darby Smith, James B. Aimone, Shashank Misra, Catherine Schuman, Suma G. Cardwell, Jean Anne C. Incorvia

Abstract: Perpendicular magnetic tunnel junction (pMTJ)-based true-random number generators (RNG) can consume orders of magnitude less energy per bit than CMOS pseudo-RNG. Here, we numerically investigate with a macrospin Landau-Lifshitz-Gilbert equation solver the use of pMTJs driven by spin-orbit torque to directly sample numbers from arbitrary probability distributions with the help of a tunable probabil… ▽ More Perpendicular magnetic tunnel junction (pMTJ)-based true-random number generators (RNG) can consume orders of magnitude less energy per bit than CMOS pseudo-RNG. Here, we numerically investigate with a macrospin Landau-Lifshitz-Gilbert equation solver the use of pMTJs driven by spin-orbit torque to directly sample numbers from arbitrary probability distributions with the help of a tunable probability tree. The tree operates by dynamically biasing sequences of pMTJ relaxation events, called 'coinflips', via an additional applied spin-transfer-torque current. Specifically, using a single, ideal pMTJ device we successfully draw integer samples on the interval 0,255 from an exponential distribution based on p-value distribution analysis. In order to investigate device-to-device variations, the thermal stability of the pMTJs are varied based on manufactured device data. It is found that while repeatedly using a varied device inhibits ability to recover the probability distribution, the device variations average out when considering the entire set of devices as a 'bucket' to agnostically draw random numbers from. Further, it is noted that the device variations most significantly impact the highest level of the probability tree, iwth diminishing errors at lower levels. The devices are then used to draw both uniformly and exponentially distributed numbers for the Monte Carlo computation of a problem from particle transport, showing excellent data fit with the analytical solution. Finally, the devices are benchmarked against CMOS and memristor RNG, showing faster bit generation and significantly lower energy use. △ Less

Submitted 27 November, 2023; originally announced November 2023.

Comments: 10 pages, 8 figures, 2 tables

Temperature-Resilient True Random Number Generation with Stochastic Actuated Magnetic Tunnel Junction Devices

Authors: Laura Rehm, Md Golam Morshed, Shashank Misra, Ankit Shukla, Shaloo Rakheja, Mustafa Pinarbasi, Avik W. Ghosh, Andrew D. Kent

Abstract: Nanoscale magnetic tunnel junction (MTJ) devices can efficiently convert thermal energy in the environment into random bitstreams for computational modeling and cryptography. We recently showed that perpendicular MTJs activated by nanosecond pulses can generate true random numbers at high data rates. Here, we explore the dependence of probability bias-the deviations from equal probability (50/50)… ▽ More Nanoscale magnetic tunnel junction (MTJ) devices can efficiently convert thermal energy in the environment into random bitstreams for computational modeling and cryptography. We recently showed that perpendicular MTJs activated by nanosecond pulses can generate true random numbers at high data rates. Here, we explore the dependence of probability bias-the deviations from equal probability (50/50) 0/1 bit outcomes-of such devices on temperature, pulse amplitude, and duration. Our experimental results and device model demonstrate that operation with nanosecond pulses in the ballistic limit minimizes variation of probability bias with temperature to be far lower than that of devices operated with longer-duration pulses. Further, operation in the short-pulse limit reduces the bias variation with pulse amplitude while rendering the device more sensitive to pulse duration. These results are significant for designing TRNG MTJ circuits and establishing operating conditions. △ Less

Submitted 8 November, 2023; v1 submitted 28 October, 2023; originally announced October 2023.

Comments: 6 pages, 4 figures

When the atoms dance: exploring mechanisms of electron-beam induced modifications of materials with machine-learning assisted high temporal resolution electron microscopy

Authors: Matthew G. Boebinger, Ayana Ghosh, Kevin M. Roccapriore, Sudhajit Misra, Kai Xiao, Stephen Jesse, Maxim Ziatdinov, Sergei V. Kalinin, Raymond R. Unocic

Abstract: Directed atomic fabrication using an aberration-corrected scanning transmission electron microscope (STEM) opens new pathways for atomic engineering of functional materials. In this approach, the electron beam is used to actively alter the atomic structure through electron beam induced irradiation processes. One of the impediments that has limited widespread use thus far has been the ability to un… ▽ More Directed atomic fabrication using an aberration-corrected scanning transmission electron microscope (STEM) opens new pathways for atomic engineering of functional materials. In this approach, the electron beam is used to actively alter the atomic structure through electron beam induced irradiation processes. One of the impediments that has limited widespread use thus far has been the ability to understand the fundamental mechanisms of atomic transformation pathways at high spatiotemporal resolution. Here, we develop a workflow for obtaining and analyzing high-speed spiral scan STEM data, up to 100 fps, to track the atomic fabrication process during nanopore milling in monolayer MoS2. An automated feedback-controlled electron beam positioning system combined with deep convolution neural network (DCNN) was used to decipher fast but low signal-to-noise datasets and classify time-resolved atom positions and nature of their evolving atomic defect configurations. Through this automated decoding, the initial atomic disordering and reordering processes leading to nanopore formation was able to be studied across various timescales. Using these experimental workflows a greater degree of speed and information can be extracted from small datasets without compromising spatial resolution. This approach can be adapted to other 2D materials systems to gain further insights into the defect formation necessary to inform future automated fabrication techniques utilizing the STEM electron beam. △ Less

Submitted 12 October, 2023; originally announced October 2023.

An exactly solvable asymmetric $K$-exclusion process

Authors: Arvind Ayyer, Samarth Misra

Abstract: We study an interacting particle process on a finite ring with $L$ sites with at most $K$ particles per site, in which particles hop to nearest neighbors with rates given in terms of $t$-deformed integers and asymmetry parameter $q$, where $t>0$ and $q \geq 0$ are parameters. This model, which we call the $(q, t)$~$K$-ASEP, reduces to the usual ASEP on the ring when $K = 1$ and to a model studied… ▽ More We study an interacting particle process on a finite ring with $L$ sites with at most $K$ particles per site, in which particles hop to nearest neighbors with rates given in terms of $t$-deformed integers and asymmetry parameter $q$, where $t>0$ and $q \geq 0$ are parameters. This model, which we call the $(q, t)$~$K$-ASEP, reduces to the usual ASEP on the ring when $K = 1$ and to a model studied by Schütz and Sandow (\emph{Phys. Rev. E}, 1994) when $t = q = 1$. This is a special case of the misanthrope process and as a consequence, the steady state does not depend on $q$ and is of product form, generalizing the same phenomena for the ASEP. What is interesting here is the steady state weights are given by explicit formulas involving $t$-binomial coefficients, and are palindromic polynomials in $t$. Interestingly, although the $(q, t)$~$K$-ASEP does not satisfy particle-hole symmetry, its steady state does. We analyze the density and calculate the most probable number of particles at a site in the steady state in various regimes of $t$. Lastly, we construct a two-dimensional exclusion process on a discrete cylinder with height $K$ and circumference $L$ which projects to the $(q, t)$~$K$-ASEP and whose steady state distribution is also of product form. We believe this model will serve as an illustrative example in constructing two-dimensional analogues of misanthrope processes. Simulations are attached as ancillary files. △ Less

Submitted 12 April, 2024; v1 submitted 5 October, 2023; originally announced October 2023.

Comments: 35 pages, 4 figures, simulations are also available at http://www.math.iisc.ac.in/~arvind/KASEP/, signification corrections, many new references

MSC Class: 82C23; 82C22; 60J10; 05A10

Field-induced hybridization of moiré excitons in MoSe$_2$/WS$_2$ heterobilayers

Authors: Borislav Polovnikov, Johannes Scherzer, Subhradeep Misra, Xin Huang, Christian Mohl, Zhijie Li, Jonas Göser, Jonathan Förste, Ismail Bilgin, Kenji Watanabe, Takashi Taniguchi, Alexander Högele, Anvar S. Baimuratov

Abstract: We study experimentally and theoretically the hybridization among intralayer and interlayer moiré excitons in a MoSe$_2$/WS$_2$ heterostructure with antiparallel alignment. Using a dual-gate device and cryogenic white light reflectance and narrow-band laser modulation spectroscopy, we subject the moiré excitons in the MoSe$_2$/WS$_2$ heterostack to a perpendicular electric field, monitor the field… ▽ More We study experimentally and theoretically the hybridization among intralayer and interlayer moiré excitons in a MoSe$_2$/WS$_2$ heterostructure with antiparallel alignment. Using a dual-gate device and cryogenic white light reflectance and narrow-band laser modulation spectroscopy, we subject the moiré excitons in the MoSe$_2$/WS$_2$ heterostack to a perpendicular electric field, monitor the field-induced dispersion and hybridization of intralayer and interlayer moiré exciton states, and induce a cross-over from type I to type II band alignment. Moreover, we employ perpendicular magnetic fields to map out the dependence of the corresponding exciton Landé $g$-factors on the electric field. Finally, we develop an effective theoretical model combining resonant and non-resonant contributions to moiré potentials to explain the observed phenomenology, and highlight the relevance of interlayer coupling for structures with close energetic band alignment as in MoSe$_2$/WS$_2$. △ Less

Submitted 16 February, 2024; v1 submitted 27 April, 2023; originally announced April 2023.

Comments: Replacement by the accepted manuscript version

Journal ref: Phys. Rev. Lett. 132, 076902 (2024)

Electronic structure of boron and aluminum $δ$-doped layers in silicon

Authors: Quinn T. Campbell, Shashank Misra, Andrew D. Baczewski

Abstract: Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum $δ$-doped layers in silicon with densities above the solid solubility limit. We use density functional theory to predict the band structure and effective mass values of such $δ$ layers, first modeling them as ordered supercells. Structural relaxation is found to have a significant i… ▽ More Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum $δ$-doped layers in silicon with densities above the solid solubility limit. We use density functional theory to predict the band structure and effective mass values of such $δ$ layers, first modeling them as ordered supercells. Structural relaxation is found to have a significant impact on the impurity band energies and effective masses of the boron layers, but not the aluminum layers. However, disorder in the $δ$ layers is found to lead to significant flattening of the bands in both cases. We calculate the local density of states and do** potential for these $δ$-doped layers, demonstrating that their influence is highly localized with spatial extents at most 4 nm. We conclude that acceptor $δ$-doped layers exhibit different electronic structure features dependent on both the dopant atom and spatial ordering. This suggests prospects for controlling the electronic properties of these layers if the local details of the incorporation chemistry can be fine tuned. △ Less

Submitted 17 April, 2023; originally announced April 2023.

Comments: Main text 8 pages, 6 figures + Appendices 3 pages, 2 figures

Journal ref: Journal of Applied Physics 134, 044401 (2023)

Random Bitstream Generation using Voltage-Controlled Magnetic Anisotropy and Spin Orbit Torque Magnetic Tunnel Junctions

Authors: Samuel Liu, Jaesuk Kwon, Paul W. Bessler, Suma Cardwell, Catherine Schuman, J. Darby Smith, James B. Aimone, Shashank Misra, Jean Anne C. Incorvia

Abstract: Probabilistic computing using random number generators (RNGs) can leverage the inherent stochasticity of nanodevices for system-level benefits. The magnetic tunnel junction (MTJ) has been studied as an RNG due to its thermally-driven magnetization dynamics, often using spin transfer torque (STT) current amplitude to control the random switching of the MTJ free layer magnetization, here called the… ▽ More Probabilistic computing using random number generators (RNGs) can leverage the inherent stochasticity of nanodevices for system-level benefits. The magnetic tunnel junction (MTJ) has been studied as an RNG due to its thermally-driven magnetization dynamics, often using spin transfer torque (STT) current amplitude to control the random switching of the MTJ free layer magnetization, here called the stochastic write method. There are additional knobs to control the MTJ-RNG, including voltage-controlled magnetic anisotropy (VCMA) and spin orbit torque (SOT), and there is need to systematically study and compared these methods. We build an analytical model of the MTJ to characterize using VCMA and SOT to generate random bit streams. The results show that both methods produce high quality, uniformly distributed bitstreams. Biasing the bitstreams using either STT current or an applied magnetic field shows an approximately sigmoidal distribution vs. bias amplitude for both VCMA and SOT, compared to less sigmoidal for stochastic write for the same conditions. The energy consumption per sample is calculated to be 0.1 pJ (SOT), 1 pJ (stochastic write), and 20 pJ (VCMA), revealing the potential energy benefit of using SOT and showing using VCMA may require higher dam** materials. The generated bitstreams are then applied to two example tasks: generating an arbitrary probability distribution using the Hidden Correlation Bernoulli Coins method and using the MTJ-RNGs as stochastic neurons to perform simulated annealing in a Boltzmann machine, where both VCMA and SOT methods show the ability to effectively minimize the system energy with small delay and low energy. These results show the flexibility of the MTJ as a true RNG and elucidate design parameters for optimizing the device operation for applications. △ Less

Submitted 29 November, 2022; originally announced November 2022.

Comments: 9 pages, 6 figures

Suppression of mid-infrared plasma resonance due to quantum confinement in delta-doped silicon

Authors: Steve M. Young, Aaron M. Katzenmeyer, Evan M. Anderson, Ting S. Luk, Jeffrey A. Ivie, Scott W. Schmucker, Xujiao Gao, Shashank Misra

Abstract: The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum mechanical effects dominate such as P:$δ$-layers - atomically thin sheets of phosphorus dopants in silicon that induce novel electronic properties beyond traditional do**. Previously it was shown that P:$δ$-layers pro… ▽ More The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum mechanical effects dominate such as P:$δ$-layers - atomically thin sheets of phosphorus dopants in silicon that induce novel electronic properties beyond traditional do**. Previously it was shown that P:$δ$-layers produce a distinct Drude tail feature in ellipsometry measurements. However, the ellipsometric spectra could not be properly fit by modeling the $δ$-layer as discrete layer of classical Drude metal. In particular, even for large broadening corresponding to extremely short relaxation times, a plasma resonance feature was anticipated but not evident in the experimental data. In this work, we develop a physically accurate description of this system, which reveals a general approach to designing thin films with intentionally suppressed plasma resonances. Our model takes into account the strong charge density confinement and resulting quantum mechanical description of a P:$δ$-layer. We show that the absence of a plasma resonance feature results from a combination of two factors: i), the sharply varying charge density profile due to strong confinement in the direction of growth; and ii), the effective mass and relaxation time anisotropy due to valley degeneracy. The plasma resonance reappears when the atoms composing the $δ$-layer are allowed to diffuse out from the plane of the layer, destroying its well-confined two-dimensional character that is critical to its novel electronic properties. △ Less

Submitted 7 March, 2023; v1 submitted 19 October, 2022; originally announced October 2022.

Report number: SAND2023-12740O

Influence of imperfections on tunneling rate in $δ$-layer junctions

Authors: Juan P. Mendez, Shashank Misra, Denis Mamaluy

Abstract: The atomically precise placement of dopants in semiconductors using scanning tunneling microscopes has been used to create planar dopant-based devices, enabling the exploration of novel classical or quantum computing concepts, which often require precise control over tunneling rates in their operation. While the geometry of the dopants can be defined to sub-nanometer precision, imperfections can s… ▽ More The atomically precise placement of dopants in semiconductors using scanning tunneling microscopes has been used to create planar dopant-based devices, enabling the exploration of novel classical or quantum computing concepts, which often require precise control over tunneling rates in their operation. While the geometry of the dopants can be defined to sub-nanometer precision, imperfections can still play a significant role in determining the tunneling rates. Here, we investigate the influence of different imperfections in phosphorous $δ$-layer tunnel junctions in silicon: variations of $δ$-layer thickness and tunnel gap width, interface roughness, and charged impurities. It is found that while most of the imperfections moderately affect the tunneling rate, a single charged impurity in the tunnel gap can alter the tunneling rate by more than an order of magnitude, even for relatively large tunnel gaps. Moreover, it is also revealed that the tunneling rate strongly depends on the electrical charge sign of the impurity. △ Less

Submitted 5 October, 2023; v1 submitted 22 September, 2022; originally announced September 2022.

Coulomb-correlated states of moiré excitons and charges in a semiconductor moiré lattice

Authors: Borislav Polovnikov, Johannes Scherzer, Subhradeep Misra, Xin Huang, Christian Mohl, Zhijie Li, Jonas Göser, Jonathan Förste, Ismail Bilgin, Kenji Watanabe, Takashi Taniguchi, Anvar S. Baimuratov, Alexander Högele

Abstract: Semiconductor moiré heterostructures exhibit rich correlation-induced many-body phenomena with signatures of emergent magnetism, Mott insulating states or generalized Wigner crystals observed in optical spectroscopy by probing intralayer excitons. However, as the staggered band alignment in the underlying WSe$_2$/WS$_2$ heterobilayer system separates photoexcited electrons and holes to form lowest… ▽ More Semiconductor moiré heterostructures exhibit rich correlation-induced many-body phenomena with signatures of emergent magnetism, Mott insulating states or generalized Wigner crystals observed in optical spectroscopy by probing intralayer excitons. However, as the staggered band alignment in the underlying WSe$_2$/WS$_2$ heterobilayer system separates photoexcited electrons and holes to form lowest-energy interlayer excitons, direct access to interactions between correlated charge states and ground state moiré excitons remained elusive. Here, we use MoSe$_2$/WS$_2$ heterostacks with type-I band alignment to probe Coulomb interactions of elementary charges with the ground and excited states of moiré excitons. In addition to positive and negative moiré trions reminiscent of their canonical counterparts in monolayer MoSe$_2$, we reveal novel many-body states formed between moiré excitons and charges at fractional filling factors of the periodic moiré lattice. For both electrons and holes, these states exhibit do**-dependent Landé factors as a hallmark of correlation-induced magnetism, identifying the MoSe$_2$/WS$_2$ heterobilayer as a unique system for studies of correlated phenomena in ambipolar do** regimes. △ Less

Submitted 29 September, 2022; v1 submitted 8 August, 2022; originally announced August 2022.

Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing

Authors: Quinn Campbell, Justine C. Koepke, Jeffrey A. Ivie, Andrew M. Mounce, Daniel R. Ward, Malcolm S. Carroll, Shashank Misra, Andrew D. Baczewski, Ezra Bussmann

Abstract: Atomic-precision advanced manufacturing enables the placement of dopant atoms within $\pm$1 lattice site in crystalline Si. However, it has recently been shown that reaction kinetics can introduce uncertainty in whether a single donor will incorporate at all in a minimal 3-dimer lithographic window. In this work, we explore the combined impact of lithographic variation and stochastic kinetics on P… ▽ More Atomic-precision advanced manufacturing enables the placement of dopant atoms within $\pm$1 lattice site in crystalline Si. However, it has recently been shown that reaction kinetics can introduce uncertainty in whether a single donor will incorporate at all in a minimal 3-dimer lithographic window. In this work, we explore the combined impact of lithographic variation and stochastic kinetics on P incorporation as the size of such a window is increased. We augment a kinetic model for PH$_3$ dissociation leading to P incorporation on Si(100)-2$\times$1 to include barriers for reactions across distinct dimer rows. Using this model, we demonstrate that even for a window consisting of 2$\times$3 silicon dimers, the probability that at least one donor incorporates is nearly unity. We also examine the impact of size of the lithographic window, finding that the incorporation fraction saturates to $δ$-layer like coverage as the circumference-to-area ratio approaches zero. We predict that this incorporation fraction depends strongly on the dosage of the precursor, and that the standard deviation of the number of incorporations scales as $\sim \sqrt{n}$, as would be expected for a series of largely independent incorporation events. Finally, we characterize an array of experimentally prepared multi-donor lithographic windows and use our kinetic model to study variability due to the observed lithographic roughness, predicting a negligible impact on incorporation statistics. We find good agreement between our model and the inferred incorporation in these windows from scanning tunneling microscope measurements, indicating the robustness of atomic-precision advanced manufacturing to errors in patterning for multi-donor patches. △ Less

Submitted 21 July, 2022; originally announced July 2022.

Comments: Main text 24 pages, 5 figures + Appendecies 8 pages, 3 figures

Reaction pathways of BCl$_3$ for acceptor delta-do** of silicon

Authors: Quinn Campbell, Kevin J. Dwyer, Sungha Baek, Andrew D. Baczewski, Robert E. Butera, Shashank Misra

Abstract: BCl$_3$ is a promising candidate for atomic-precision acceptor do** in Si, but optimizing the electrical properties of structures created with this technique requires a detailed understanding of adsorption and dissociation pathways for this precursor. Here, we use density functional theory and scanning tunneling microscopy (STM) to identify and explore these pathways for BCl$_3$ on Si(100) at di… ▽ More BCl$_3$ is a promising candidate for atomic-precision acceptor do** in Si, but optimizing the electrical properties of structures created with this technique requires a detailed understanding of adsorption and dissociation pathways for this precursor. Here, we use density functional theory and scanning tunneling microscopy (STM) to identify and explore these pathways for BCl$_3$ on Si(100) at different annealing temperatures. We demonstrate that BCl$_3$ adsorbs selectively without a reaction barrier, and subsequently dissociates relatively easily with reaction barriers $\approx$1 eV. Using this dissociation pathway, we parameterize a Kinetic Monte Carlo model to predict B incorporation rates as a function of dosing conditions. STM is used to image BCl$_{3}$ adsorbates, identifying several surface configurations and tracking the change in their distribution as a function of the annealing temperature, matching predictions of the kinetic model well. This straightforward pathway for atomic-precision acceptor do** helps enable a wide range of applications including bipolar nanoelectronics, acceptor-based qubits, and superconducting Si. △ Less

Submitted 27 January, 2022; originally announced January 2022.

Comments: 20 pages, 5 figures, Main text + supporting info

Accelerated Lifetime Testing and Analysis of Delta-doped Silicon Test Structures

Authors: Connor Halsey, Jessica Depoy, DeAnna M. Campbell, Daniel R. Ward, Evan M. Anderson, Scott W. Schmucker, Jeffrey A. Ivie, Xujiao Gao, David A. Scrymgeour, Shashank Misra

Abstract: As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly doped phosphorus layers with atomic precision has implications for the future of digital electronics. This work establishes the accelerated lifetime tests of s… ▽ More As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly doped phosphorus layers with atomic precision has implications for the future of digital electronics. This work establishes the accelerated lifetime tests of such doped layers, showing that these materials survive high current (>3.0 MA/cm2) and 300$^{\circ}$C for greater than 70 days and are still electrically conductive. The doped layers compare well to failures in traditional metal layers like aluminum and copper where mean time to failure at these temperatures and current densities would occur within hours. It also establishes that these materials are more stable than metal features, paving the way toward their integration with operational CMOS. △ Less

Submitted 24 February, 2022; v1 submitted 22 October, 2021; originally announced October 2021.

Comments: In IEEE Trans. Dev. Mater. Rel. (2022). Copyright 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, including reprinting/republishing this material for advertising or promotional purposes, collecting new collected works for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works

Strong parametric coupling between two ultra-coherent membrane modes

Authors: David Hälg, Thomas Gisler, Eric C. Langman, Shobhna Misra, Oded Zilberberg, Albert Schliesser, Christian L. Degen, Alexander Eichler

Abstract: We demonstrate parametric coupling between two modes of a silicon nitride membrane. We achieve the coupling by applying an oscillating voltage to a sharp metal tip that approaches the membrane surface to within a few 100 nm. When the voltage oscillation frequency is equal to the mode frequency difference, the modes exchange energy periodically and much faster than their free energy decay rate. Thi… ▽ More We demonstrate parametric coupling between two modes of a silicon nitride membrane. We achieve the coupling by applying an oscillating voltage to a sharp metal tip that approaches the membrane surface to within a few 100 nm. When the voltage oscillation frequency is equal to the mode frequency difference, the modes exchange energy periodically and much faster than their free energy decay rate. This flexible method can potentially be useful for rapid state control and transfer between modes, and is an important step towards parametric spin sensing experiments with membrane resonators. △ Less

Submitted 24 September, 2021; originally announced September 2021.

Comments: 5(+7) pages, 4(+3) figures, number in bracket for Supplement

Journal ref: Phys. Rev. Lett. 128, 094301 (2022)

The Role of Spin-Flip Collisions in a Dark Exciton Condensate

Authors: Subhradeep Misra, Michael Stern, Vladimir Umansky, Israel Bar Joseph

Abstract: We show that a Bose-Einstein condensate consisting of dark excitons forms in GaAs coupled quantum wells at low temperatures. We find that the condensate extends over hundreds of micrometers, well beyond the optical excitation region, and is limited only by the boundaries of the mesa. We show that the condensate density is determined by spin flip** collisions among the excitons, which convert dar… ▽ More We show that a Bose-Einstein condensate consisting of dark excitons forms in GaAs coupled quantum wells at low temperatures. We find that the condensate extends over hundreds of micrometers, well beyond the optical excitation region, and is limited only by the boundaries of the mesa. We show that the condensate density is determined by spin flip** collisions among the excitons, which convert dark excitons into bright ones. The suppression of this process at low temperature yields a density buildup, manifested as a temperature-dependent blueshift of the exciton emission line. Measurements under in-plane magnetic field allows us to preferentially modify the bright excitons density, and determine their role in the system dynamics. We find that their interaction with the condensate leads to its depletion. We present a simple rate equations model, which well-reproduces the observed temperature, power, and magnetic field dependence of the exciton density. △ Less

Submitted 17 August, 2022; v1 submitted 9 September, 2021; originally announced September 2021.

Journal ref: PNAS 2022 Vol. 119 No. 32 e2203531119

Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\times$1

Authors: Quinn Campbell, Andrew D. Baczewski, R. E. Butera, Shashank Misra

Abstract: Stochastic incorporation kinetics can be a limiting factor in the scalability of semiconductor fabrication technologies using atomic-precision techniques. While these technologies have recently been extended from donors to acceptors, the extent to which kinetics will impact single-acceptor incorporation has yet to be assessed. We develop and apply an atomistic model for the single-acceptor incorpo… ▽ More Stochastic incorporation kinetics can be a limiting factor in the scalability of semiconductor fabrication technologies using atomic-precision techniques. While these technologies have recently been extended from donors to acceptors, the extent to which kinetics will impact single-acceptor incorporation has yet to be assessed. We develop and apply an atomistic model for the single-acceptor incorporation rates of several recently demonstrated precursor molecules: diborane (B$_2$H$_6$), boron trichloride (BCl$_3$), and aluminum trichloride in both monomer (AlCl$_3$) and dimer forms (Al$_2$Cl$_6$), to identify the acceptor precursor and dosing conditions most likely to yield deterministic incorporation. While all three precursors can achieve single-acceptor incorporation, we predict that diborane is unlikely to achieve deterministic incorporation, boron trichloride can achieve deterministic incorporation with modest heating (50 $^{\circ}$C), and aluminum trichloride can achieve deterministic incorporation at room temperature. We conclude that both boron and aluminum trichloride are promising precursors for atomic-precision single-acceptor applications, with the potential to enable the reliable production of large arrays of single-atom quantum devices. △ Less

Submitted 24 August, 2021; originally announced August 2021.

Comments: 10 pages, 5 figures

Journal ref: AVS Quantum Sci. 4, 016801 (2022)

The impact of stochastic incorporation on atomic-precision Si:P arrays

Authors: Jeffrey A. Ivie, Quinn Campbell, Justin C. Koepke, Mitchell I. Brickson, Peter A. Schultz, Richard P. Muller, Andrew M. Mounce, Daniel R. Ward, Malcom S. Carroll, Ezra Bussmann, Andrew D. Baczewski, Shashank Misra

Abstract: Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within $\sim$1 nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorpor… ▽ More Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within $\sim$1 nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorporate into a single lithographic window is manifestly uncertain. We present experimental results indicating that the likelihood of incorporating into an ideally written three-dimer single-donor window is $63 \pm 10\%$ for room-temperature dosing, and corroborate these results with a model for the incorporation kinetics. Nevertheless, further analysis of this model suggests conditions that might raise the incorporation rate to near-deterministic levels. We simulate bias spectroscopy on a chain of comparable dimensions to the array in our yield study, indicating that such an experiment may help confirm the inferred incorporation rate. △ Less

Submitted 25 May, 2021; originally announced May 2021.

Comments: 20 pages, 13 figures

Journal ref: Phys. Rev. Applied 16, 054037 (2021)

Exponential Reduction in Sample Complexity with Learning of Ising Model Dynamics

Authors: Arkopal Dutt, Andrey Y. Lokhov, Marc Vuffray, Sidhant Misra

Abstract: The usual setting for learning the structure and parameters of a graphical model assumes the availability of independent samples produced from the corresponding multivariate probability distribution. However, for many models the mixing time of the respective Markov chain can be very large and i.i.d. samples may not be obtained. We study the problem of reconstructing binary graphical models from co… ▽ More The usual setting for learning the structure and parameters of a graphical model assumes the availability of independent samples produced from the corresponding multivariate probability distribution. However, for many models the mixing time of the respective Markov chain can be very large and i.i.d. samples may not be obtained. We study the problem of reconstructing binary graphical models from correlated samples produced by a dynamical process, which is natural in many applications. We analyze the sample complexity of two estimators that are based on the interaction screening objective and the conditional likelihood loss. We observe that for samples coming from a dynamical process far from equilibrium, the sample complexity reduces exponentially compared to a dynamical process that mixes quickly. △ Less

Submitted 14 June, 2021; v1 submitted 2 April, 2021; originally announced April 2021.

Comments: Accepted to ICML 2021

Journal ref: Proceedings of the 38th International Conference on Machine Learning, PMLR 139:2914-2925, 2021

AlCl$_{3}$-dosed Si(100)-2$\times$1: Adsorbates, chlorinated Al chains, and incorporated Al

Authors: Matthew S. Radue, Sungha Baek, Azadeh Farzaneh, K. J. Dwyer, Quinn Campbell, Andrew D. Baczewski, Ezra Bussmann, George T. Wang, Yifei Mo, Shashank Misra, R. E. Butera

Abstract: The adsorption of AlCl$_{3}$ on Si(100) and the effect of annealing the AlCl$_{3}$-dosed substrate was studied to reveal key surface processes for the development of atomic-precision acceptor-do** techniques. This investigation was performed via scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. At room temperature, AlCl… ▽ More The adsorption of AlCl$_{3}$ on Si(100) and the effect of annealing the AlCl$_{3}$-dosed substrate was studied to reveal key surface processes for the development of atomic-precision acceptor-do** techniques. This investigation was performed via scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. At room temperature, AlCl$_{3}$ readily adsorbed to the Si substrate dimers and dissociated to form a variety of species. Annealing of the AlCl$_{3}$-dosed substrate at temperatures below 450 $^{\circ}$C produced unique chlorinated aluminum chains (CACs) elongated along the Si(100) dimer row direction. An atomic model for the chains is proposed with supporting DFT calculations. Al was incorporated into the Si substrate upon annealing at 450 $^{\circ}$C and above, and Cl desorption was observed for temperatures beyond 450 $^{\circ}$C. Al-incorporated samples were encapsulated in Si and characterized by secondary ion mass spectrometry (SIMS) depth profiling to quantify the Al atom concentration, which was found to be in excess of 10$^{20}$ cm$^{-3}$ across a $\sim$2.7 nm thick $δ$-doped region. The Al concentration achieved here and the processing parameters utilized promote AlCl$_{3}$ as a viable gaseous precursor for novel acceptor-doped Si materials and devices for quantum computing. △ Less

Submitted 22 January, 2021; originally announced January 2021.

Comments: 35 pages, 8 figures

A model for atomic precision p-type do** with diborane on Si(100)-2$\times$1

Authors: Quinn Campbell, Jeffrey A. Ivie, Ezra Bussmann, Scott W. Schmucker, Andrew D. Baczewki, Shashank Misra

Abstract: Diborane (B$_2$H$_6$) is a promising molecular precursor for atomic precision p-type do** of silicon that has recently been experimentally demonstrated [T. {Š}kere{ň}, \textit{et al.,} Nature Electronics (2020)]. We use density functional theory (DFT) calculations to determine the reaction pathway for diborane dissociating into a species that will incorporate as electrically active substitutiona… ▽ More Diborane (B$_2$H$_6$) is a promising molecular precursor for atomic precision p-type do** of silicon that has recently been experimentally demonstrated [T. {Š}kere{ň}, \textit{et al.,} Nature Electronics (2020)]. We use density functional theory (DFT) calculations to determine the reaction pathway for diborane dissociating into a species that will incorporate as electrically active substitutional boron after adsorbing onto the Si(100)-2$\times$1 surface. Our calculations indicate that diborane must overcome an energy barrier to adsorb, explaining the experimentally observed low sticking coefficient ($< 10^{-4}$ at room temperature) and suggesting that heating can be used to increase the adsorption rate. Upon sticking, diborane has an $\sim 50\%$ chance of splitting into two BH$_3$ fragments versus merely losing hydrogen to form a dimer such as B$_2$H$_4$. As boron dimers are likely electrically inactive, whether this latter reaction occurs is shown to be predictive of the incorporation rate. The dissociation process proceeds with significant energy barriers, necessitating the use of high temperatures for incorporation. Using the barriers calculated from DFT, we parameterize a Kinetic Monte Carlo model that predicts the incorporation statistics of boron as a function of the initial depassivation geometry, dose, and anneal temperature. Our results suggest that the dimer nature of diborane inherently limits its do** density as an acceptor precursor, and furthermore that heating the boron dimers to split before exposure to silicon can lead to poor selectivity on hydrogen and halogen resists. This suggests that while diborane works as an atomic precision acceptor precursor, other non-dimerized acceptor precursors may lead to higher incorporation rates at lower temperatures. △ Less

Submitted 30 September, 2020; originally announced October 2020.

Comments: 24 pages, 6 figures

Learning of Discrete Graphical Models with Neural Networks

Authors: Abhijith J., Andrey Y. Lokhov, Sidhant Misra, Marc Vuffray

Abstract: Graphical models are widely used in science to represent joint probability distributions with an underlying conditional dependence structure. The inverse problem of learning a discrete graphical model given i.i.d samples from its joint distribution can be solved with near-optimal sample complexity using a convex optimization method known as Generalized Regularized Interaction Screening Estimator (… ▽ More Graphical models are widely used in science to represent joint probability distributions with an underlying conditional dependence structure. The inverse problem of learning a discrete graphical model given i.i.d samples from its joint distribution can be solved with near-optimal sample complexity using a convex optimization method known as Generalized Regularized Interaction Screening Estimator (GRISE). But the computational cost of GRISE becomes prohibitive when the energy function of the true graphical model has higher-order terms. We introduce NeurISE, a neural net based algorithm for graphical model learning, to tackle this limitation of GRISE. We use neural nets as function approximators in an Interaction Screening objective function. The optimization of this objective then produces a neural-net representation for the conditionals of the graphical model. NeurISE algorithm is seen to be a better alternative to GRISE when the energy function of the true model has a high order with a high degree of symmetry. In these cases NeurISE is able to find the correct parsimonious representation for the conditionals without being fed any prior information about the true model. NeurISE can also be used to learn the underlying structure of the true model with some simple modifications to its training procedure. In addition, we also show a variant of NeurISE that can be used to learn a neural net representation for the full energy function of the true model. △ Less

Submitted 22 December, 2020; v1 submitted 21 June, 2020; originally announced June 2020.

Comments: To be published in Advances in Neural Information Processing Systems 33

Atomic Precision Advanced Manufacturing for Digital Electronics

Authors: Daniel R. Ward, Scott W. Schmucker, Evan M. Anderson, Ezra Bussmann, Lisa Tracy, Tzu-Ming Lu, Leon N. Maurer, Andrew Baczewski, Deanna M. Campbell, Michael T. Marshall, Shashank Misra

Abstract: An exponential increase in the performance of silicon microelectronics and the demand to manufacture in great volumes has created an ecosystem that requires increasingly complex tools to fabricate and characterize the next generation of chips. However, the cost to develop and produce the next generation of these tools has also risen exponentially, to the point where the risk associated with progre… ▽ More An exponential increase in the performance of silicon microelectronics and the demand to manufacture in great volumes has created an ecosystem that requires increasingly complex tools to fabricate and characterize the next generation of chips. However, the cost to develop and produce the next generation of these tools has also risen exponentially, to the point where the risk associated with progressing to smaller feature sizes has created pain points throughout the ecosystem. The present challenge includes shrinking the smallest features from nanometers to atoms (10 nm corresponds to 30 silicon atoms). Relaxing the requirement for achieving scalable manufacturing creates the opportunity to evaluate ideas not one or two generations into the future, but at the absolute physical limit of atoms themselves. This article describes recent advances in atomic precision advanced manufacturing (APAM) that open the possibility of exploring opportunities in digital electronics. Doing so will require advancing the complexity of APAM devices and integrating APAM with CMOS. △ Less

Submitted 25 February, 2020; originally announced February 2020.

Journal ref: Electronic Device Failure Analysis, 22 (2020) 1:4-10

Low Thermal Budget High-k/Metal Surface Gate for Buried Donor-Based Devices

Authors: Evan M. Anderson, DeAnna M. Campbell, Leon N. Maurer, Andrew D. Baczewski, Michael T. Marshall, Tzu-Ming Lu, ** Lu, Lisa A. Tracy, Scott W. Schmucker, Daniel R. Ward, Shashank Misra

Abstract: Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the invest… ▽ More Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the investigation of alternative fabrication paths that extend to the atomic scale. APAM donor devices can be created using a scanning tunneling microscope (STM). However, these devices are not currently compatible with industry standard fabrication processes. There exists a tradeoff between low thermal budget (LT) processes to limit dopant diffusion and high thermal budget (HT) processes to grow defect-free layers of epitaxial Si and gate oxide. To this end, we have developed an LT epitaxial Si cap and LT deposited Al2O3 gate oxide integrated with an atomically precise single-electron transistor (SET) that we use as an electrometer to characterize the quality of the gate stack. The surface-gated SET exhibits the expected Coulomb blockade behavior. However, the leverage of the gate over the SET is limited by defects in the layers above the SET, including interfaces between the Si and oxide, and structural and chemical defects in the Si cap. We propose a more sophisticated gate stack and process flow that is predicted to improve performance in future atomic precision devices. △ Less

Submitted 11 June, 2020; v1 submitted 20 February, 2020; originally announced February 2020.

Comments: Version accepted for open access publication in Journal of Physics: Materials. Added keywords, additional text to the abstract, additional discussion of interfaces, and additional references. Consolidated references into one section at the end of the document instead of one part for the main article and one part for the supplementary material

Quantum Simulators: Architectures and Opportunities

Authors: Ehud Altman, Kenneth R. Brown, Giuseppe Carleo, Lincoln D. Carr, Eugene Demler, Cheng Chin, Brian DeMarco, Sophia E. Economou, Mark A. Eriksson, Kai-Mei C. Fu, Markus Greiner, Kaden R. A. Hazzard, Randall G. Hulet, Alicia J. Kollar, Benjamin L. Lev, Mikhail D. Lukin, Ruichao Ma, Xiao Mi, Shashank Misra, Christopher Monroe, Kater Murch, Zaira Nazario, Kang-Kuen Ni, Andrew C. Potter, Pedram Roushan , et al. (12 additional authors not shown)

Abstract: Quantum simulators are a promising technology on the spectrum of quantum devices from specialized quantum experiments to universal quantum computers. These quantum devices utilize entanglement and many-particle behaviors to explore and solve hard scientific, engineering, and computational problems. Rapid development over the last two decades has produced more than 300 quantum simulators in operati… ▽ More Quantum simulators are a promising technology on the spectrum of quantum devices from specialized quantum experiments to universal quantum computers. These quantum devices utilize entanglement and many-particle behaviors to explore and solve hard scientific, engineering, and computational problems. Rapid development over the last two decades has produced more than 300 quantum simulators in operation worldwide using a wide variety of experimental platforms. Recent advances in several physical architectures promise a golden age of quantum simulators ranging from highly optimized special purpose simulators to flexible programmable devices. These developments have enabled a convergence of ideas drawn from fundamental physics, computer science, and device engineering. They have strong potential to address problems of societal importance, ranging from understanding vital chemical processes, to enabling the design of new materials with enhanced performance, to solving complex computational problems. It is the position of the community, as represented by participants of the NSF workshop on "Programmable Quantum Simulators," that investment in a national quantum simulator program is a high priority in order to accelerate the progress in this field and to result in the first practical applications of quantum machines. Such a program should address two areas of emphasis: (1) support for creating quantum simulator prototypes usable by the broader scientific community, complementary to the present universal quantum computer effort in industry; and (2) support for fundamental research carried out by a blend of multi-investigator, multi-disciplinary collaborations with resources for quantum simulator software, hardware, and education. △ Less

Submitted 20 December, 2019; v1 submitted 14 December, 2019; originally announced December 2019.

Comments: 41 pages -- references and acknowledgments added in v2

Journal ref: PRX Quantum 2, 017003 (2021)

Experimental Study of the Exciton Gas Liquid Transition in Coupled Quantum Wells

Authors: Subhradeep Misra, Michael Stern, Arjun Joshua, Vladimir Umansky, Israel Bar-Joseph

Abstract: We study the exciton gas-liquid transition in GaAs/AlGaAs coupled quantum wells. Below a critical temperature, Tc=4.8K, and above a threshold laser power density the system undergoes a phase transition into a liquid state. We determine the density temperature phase diagram over the temperature range 0.1 to 4.8K. We find that the latent heat increases linearly with temperature at T<1.1K, similarly… ▽ More We study the exciton gas-liquid transition in GaAs/AlGaAs coupled quantum wells. Below a critical temperature, Tc=4.8K, and above a threshold laser power density the system undergoes a phase transition into a liquid state. We determine the density temperature phase diagram over the temperature range 0.1 to 4.8K. We find that the latent heat increases linearly with temperature at T<1.1K, similarly to a Bose Einstein condensate transition, and becomes constant at 1.1<T<4.8K. Resonant Rayleigh scattering measurements reveal that the disorder in the sample is strongly suppressed and the diffusion coefficient sharply increases with decreasing temperature at T<Tc, allowing the liquid to spread over large distances away from the excitation region. We suggest that our findings are manifestations of a quantum liquid behavior. △ Less

Submitted 31 December, 2017; originally announced January 2018.

All-optical lithography process for contacting atomically-precise devices

Authors: Daniel R. Ward, Michael T. Marshall, DeAnna M. Campbell, Tzu-Ming Lu, Justin C. Koepke, David A. Scrymgeour, Ezra Bussmann, Shashank Misra

Abstract: We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a pat… ▽ More We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process. △ Less

Submitted 8 August, 2017; originally announced August 2017.

Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy

Authors: E. N. Yitamben, R. E. Butera, B. S. Swartzentruber, R. J. Simonson, S. Misra, M. S. Carroll, E. Bussmann

Abstract: Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2D adatom islanding to step-flow growth, systematic controlled air leaks into the growth chamber induce pits in the growth surface. We show that pits are also correlated with oxygen-contaminated flux from Si sublimation s… ▽ More Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2D adatom islanding to step-flow growth, systematic controlled air leaks into the growth chamber induce pits in the growth surface. We show that pits are also correlated with oxygen-contaminated flux from Si sublimation sources. From a thermodynamic standpoint, multilayer growth pits are unexpected in relaxed homoepitaxial growth, whereas oxidation is a known cause for step pinning, roughening, and faceting on elemental surfaces, both with and without growth flux. Not surprisingly, pits are thermodynamically metastable and heal by annealing to recover a smooth periodic step arrangement. STM reveals new details about the pits' atomistic origins and growth dynamics. We give a model for heterogeneous nucleation of pits by preferential adsorption of Å-sized oxide nuclei at intrinsic growth antiphase boundaries, and subsequent step pinning and bunching around the nuclei. △ Less

Submitted 15 June, 2017; originally announced June 2017.

Comments: 9 pages, 5 figures

Optimal structure and parameter learning of Ising models

Authors: Andrey Y. Lokhov, Marc Vuffray, Sidhant Misra, Michael Chertkov

Abstract: Reconstruction of structure and parameters of an Ising model from binary samples is a problem of practical importance in a variety of disciplines, ranging from statistical physics and computational biology to image processing and machine learning. The focus of the research community shifted towards develo** universal reconstruction algorithms which are both computationally efficient and require… ▽ More Reconstruction of structure and parameters of an Ising model from binary samples is a problem of practical importance in a variety of disciplines, ranging from statistical physics and computational biology to image processing and machine learning. The focus of the research community shifted towards develo** universal reconstruction algorithms which are both computationally efficient and require the minimal amount of expensive data. We introduce a new method, Interaction Screening, which accurately estimates the model parameters using local optimization problems. The algorithm provably achieves perfect graph structure recovery with an information-theoretically optimal number of samples, notably in the low-temperature regime which is known to be the hardest for learning. The efficacy of Interaction Screening is assessed through extensive numerical tests on synthetic Ising models of various topologies with different types of interactions, as well as on a real data produced by a D-Wave quantum computer. This study shows that the Interaction Screening method is an exact, tractable and optimal technique universally solving the inverse Ising problem. △ Less

Submitted 26 December, 2017; v1 submitted 15 December, 2016; originally announced December 2016.

Comments: 11 pages, 10 pages of supplementary materials

Valley Polarization by Spin Injection in a Light-Emitting van der Waals Heterojunction

Authors: Oriol Lopez Sanchez, Dmitry Ovchinnikov, Shikhar Misra, Adrien Allain, Andras Kis

Abstract: The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such valleytronic devices, it is necessary to control and manipulate the charge density in these valleys, resulting in valley polarization. While this has been demonst… ▽ More The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such valleytronic devices, it is necessary to control and manipulate the charge density in these valleys, resulting in valley polarization. While this has been demonstrated using optical excitation, generation of valley polarization in electronic devices without optical excitation remains difficult. Here, we demonstrate spin injection from a ferromagnetic electrode into a heterojunction based on monolayers of WSe2 and MoS2 and lateral transport of spin-polarized holes within the WSe2 layer. The resulting valley polarization leads to circularly polarized light emission which can be tuned using an external magnetic field. This demonstration of spin injection and magnetoelectronic control over valley polarization provides a new opportunity for realizing combined spin and valleytronic devices based on spin-valley locking in semiconducting TMDCs. △ Less

Submitted 5 September, 2016; originally announced September 2016.

Comments: in Nano Letters (2016)

Interaction Screening: Efficient and Sample-Optimal Learning of Ising Models

Authors: Marc Vuffray, Sidhant Misra, Andrey Y. Lokhov, Michael Chertkov

Abstract: We consider the problem of learning the underlying graph of an unknown Ising model on p spins from a collection of i.i.d. samples generated from the model. We suggest a new estimator that is computationally efficient and requires a number of samples that is near-optimal with respect to previously established information-theoretic lower-bound. Our statistical estimator has a physical interpretation… ▽ More We consider the problem of learning the underlying graph of an unknown Ising model on p spins from a collection of i.i.d. samples generated from the model. We suggest a new estimator that is computationally efficient and requires a number of samples that is near-optimal with respect to previously established information-theoretic lower-bound. Our statistical estimator has a physical interpretation in terms of "interaction screening". The estimator is consistent and is efficiently implemented using convex optimization. We prove that with appropriate regularization, the estimator recovers the underlying graph using a number of samples that is logarithmic in the system size p and exponential in the maximum coupling-intensity and maximum node-degree. △ Less

Submitted 19 December, 2016; v1 submitted 23 May, 2016; originally announced May 2016.

Comments: To be published in Advances in Neural Information Processing Systems 30

Journal ref: Advances in Neural Information Processing Systems, 2595--2603, 2016

Imaging and registration of buried atomic-precision donor devices using scanning capacitance microscopy

Authors: E. Bussmann, M. Rudolph, G. S. Subramania, S. Misra, S. M. Carr, E. Langlois, J. Dominguez, T. Pluym, M. P. Lilly, M. S. Carroll

Abstract: We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical challenge in completing atomic-precision nanoelectronic devices is to accurately align mesoscopic metal contacts to the STM defined nanostructures. Utilizing the SCMs a… ▽ More We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical challenge in completing atomic-precision nanoelectronic devices is to accurately align mesoscopic metal contacts to the STM defined nanostructures. Utilizing the SCMs ability to image buried dopant nanostructures, we have developed a technique by which we are able to position metal electrodes on the surface to form contacts to underlying STM fabricated donor nanostructures with a measured accuracy of 300 nm. Low temperature (T=4K) transport measurements confirm successful placement of the contacts to the donor nanostructures. △ Less

Submitted 17 October, 2014; originally announced October 2014.

Comments: The first two listed authors contributed equally to this work

Magnetic Torque of Microfabricated Elements and Magnetotactic Bacteria

Authors: Lars Zondervan, Özlem Sardan Sukas, Islam S. M. Khalil, Marc P. Pichel, Sarthak Misra, Leon Abelmann

Abstract: We present a thorough theoretical analysis of the magnetic torque on microfabricated elements with dimensions in the range of 100 to 500 μm and magneto-somes of magnetotactic bacteria of a few μm length. We derive simple equations for field dependent torque and magnetic shape anisotropy that can be readily used to replace the crude approximations commonly used. We illustrate and verify the theory… ▽ More We present a thorough theoretical analysis of the magnetic torque on microfabricated elements with dimensions in the range of 100 to 500 μm and magneto-somes of magnetotactic bacteria of a few μm length. We derive simple equations for field dependent torque and magnetic shape anisotropy that can be readily used to replace the crude approximations commonly used. We illustrate and verify the theory on microfabricated elements and magnetotactic bacteria, by field depedent torque magnetometry and by observing their rotation in water under application of a rotating magnetic field. The maximum rotation frequency of the largest microfabricated elements agrees within error boundaries with theory. For smaller, and especially thinner, elements the measured frequencies are a factor of three to four too low. We suspect this is caused by incomplete saturation of the magnetisation in the elements, which is not incorporated in our model. The maximum rotation frequency of magnetotactic bacteria agrees with our model within error margins, which are however quite big due to the large spread in bacteria morphology. The model presented provides a solid basis for the analysis of experiments with magnetic objects in liquid, which is for instance the case in the field of medical microrobotics. △ Less

Submitted 7 August, 2014; originally announced August 2014.

Design and performance of an ultra-high vacuum scanning tunneling microscope operating at dilution refrigerator temperatures and high magnetic fields

Authors: Shashank Misra, Brian B. Zhou, Ilya K. Drozdov, Jungpil Seo, Andras Gyenis, Simon C. J. Kingsley, Howard Jones, Ali Yazdani

Abstract: We describe the construction and performance of a scanning tunneling microscope (STM) capable of taking maps of the tunneling density of states with sub-atomic spatial resolution at dilution refrigerator temperatures and high (14 T) magnetic fields. The fully ultra-high vacuum system features visual access to a two-sample microscope stage at the end of a bottom-loading dilution refrigerator, which… ▽ More We describe the construction and performance of a scanning tunneling microscope (STM) capable of taking maps of the tunneling density of states with sub-atomic spatial resolution at dilution refrigerator temperatures and high (14 T) magnetic fields. The fully ultra-high vacuum system features visual access to a two-sample microscope stage at the end of a bottom-loading dilution refrigerator, which facilitates the transfer of in situ prepared tips and samples. The two-sample stage enables location of the best area of the sample under study and extends the experiment lifetime. The successful thermal anchoring of the microscope, described in detail, is confirmed through a base temperature reading of 20 mK, along with a measured electron temperature of 250 mK. Atomically-resolved images, along with complementary vibration measurements, are presented to confirm the effectiveness of the vibration isolation scheme in this instrument. Finally, we demonstrate that the microscope is capable of the same level of performance as typical machines with more modest refrigeration by measuring spectroscopic maps at base temperature both at zero field and in an applied magnetic field. △ Less

Submitted 3 October, 2013; originally announced October 2013.

Comments: 9 pages, 7 figures

Journal ref: Rev. Sci. Instrum. 84, 103903 (2013)

Visualizing Nodal Heavy Fermion Superconductivity in CeCoIn5

Authors: Brian B. Zhou, Shashank Misra, Eduardo H. da Silva Neto, Pegor Aynajian, Ryan E. Baumbach, J. D. Thompson, Eric D. Bauer, Ali Yazdani

Abstract: Understanding the origin of superconductivity in strongly correlated electron systems continues to be at the forefront of unsolved problems in all of physics. Among the heavy f-electron systems, CeCoIn5 is one of the most fascinating, as it shares many of the characteristics of correlated d-electron high-Tc cuprate and pnictide superconductors, including the competition between antiferromagnetism… ▽ More Understanding the origin of superconductivity in strongly correlated electron systems continues to be at the forefront of unsolved problems in all of physics. Among the heavy f-electron systems, CeCoIn5 is one of the most fascinating, as it shares many of the characteristics of correlated d-electron high-Tc cuprate and pnictide superconductors, including the competition between antiferromagnetism and superconductivity. While there has been evidence for unconventional pairing in this compound, high-resolution spectroscopic measurements of the superconducting state have been lacking. Previously, we have used high-resolution scanning tunneling microscopy techniques to visualize the emergence of heavy-fermion excitations in CeCoIn5 and demonstrate the composite nature of these excitations well above Tc. Here we extend these techniques to much lower temperatures to investigate how superconductivity develops within a strongly correlated band of composite excitations. We find the spectrum of heavy excitations to be strongly modified just prior to the onset of superconductivity by a suppression of the spectral weight near the Fermi energy, reminiscent of the pseudogap state in the cuprates. By measuring the response of superconductivity to various perturbations, through both quasiparticle interference and local pair-breaking experiments, we demonstrate the nodal d-wave character of superconducting pairing in CeCoIn5. △ Less

Submitted 14 July, 2013; originally announced July 2013.

Comments: Advanced online publication in Nature Physics. 15 pages, 5 figures, Supplementary Information

Vertically aligned graphene based non-cryogenic bolometer

Authors: Kiran Shankar Hazra, N. Sion, Anil Yadav, James McLauhglin, Devi Shanker Misra

Abstract: We report the photoresponse of vertically aligned graphene upon IR irradiation at room temperature. Four probe measurements have shown electrical switching in I-V characteristics during pulsed IR irradiation. The photoresponse reported here for vertically aligned graphene (VAG) is much higher than carbon nanotube (CNT) samples. Our investigation has shown that such photoresponse arise solely due t… ▽ More We report the photoresponse of vertically aligned graphene upon IR irradiation at room temperature. Four probe measurements have shown electrical switching in I-V characteristics during pulsed IR irradiation. The photoresponse reported here for vertically aligned graphene (VAG) is much higher than carbon nanotube (CNT) samples. Our investigation has shown that such photoresponse arise solely due to bolometric effect, where the conductivity changes with temperature. The magnitude of the resistance of VAGs increases by ~ 2 fold for 6 0C increase in temperature. Also the Thermal Coefficient of Resistance (TCR) in this region is ~11%/K, which is the highest TCR value reported so far for any carbon nanomaterials. △ Less

Submitted 7 January, 2013; originally announced January 2013.

Comments: 13 pages 5 figures

Evidence for a universal minimum superfluid response in field-tuned disordered superconducting films measured using low frequency ac conductivity

Authors: Shashank Misra, Lukas Urban, Minsoo Kim, Ganapathy Sambandamurthy, Ali Yazdani

Abstract: Our measurements of the low frequency ac conductivity in strongly disordered two-dimensional films near the magnetic field-tuned superconductor-to-insulator transition show a sudden drop in the phase stiffness of superconducting order with either increased temperature or magnetic field. Surprisingly, for two different material systems, the abrupt drop in the superfluid density in a magnetic field… ▽ More Our measurements of the low frequency ac conductivity in strongly disordered two-dimensional films near the magnetic field-tuned superconductor-to-insulator transition show a sudden drop in the phase stiffness of superconducting order with either increased temperature or magnetic field. Surprisingly, for two different material systems, the abrupt drop in the superfluid density in a magnetic field has the same universal value as that expected for a Berezinskii-Kosterlitz-Thouless transition in zero magnetic field. The characteristic temperature at which phase stiffness is suddenly lost can be tuned to zero at a critical magnetic field, following a power-law behavior with a critical exponent consistent with that obtained in previous dc transport studies on the dissipative side of the transition. △ Less

Submitted 5 December, 2012; originally announced December 2012.

Comments: Accepted to Physical Review Letters

Dynamics of Density Imbalanced Bilayer Holes in the Quantum Hall Regime

Authors: S. Misra, N. C. Bishop, E. Tutuc, M. Shayegan

Abstract: We report magnetotransport measurements on bilayer GaAs hole systems with unequal hole concentrations in the two layers. At magnetic fields where one layer is in the integer quantum Hall state and the other has bulk extended states at the Fermi energy, the longitudinal and Hall resistances of the latter are hysteretic, in agreement with previous measurements. For a fixed magnetic field inside th… ▽ More We report magnetotransport measurements on bilayer GaAs hole systems with unequal hole concentrations in the two layers. At magnetic fields where one layer is in the integer quantum Hall state and the other has bulk extended states at the Fermi energy, the longitudinal and Hall resistances of the latter are hysteretic, in agreement with previous measurements. For a fixed magnetic field inside this region and at low temperatures ($T\le$ 350 mK), the time evolutions of the longitudinal and Hall resistances show pronounced jumps followed by slow relaxations, with no end to the sequence of jumps. Our measurements demonstrate that the jumps occur simultaneously in pairs of contacts 170 $μ$m apart, and appear to involve changes in the charge configuration of the bilayer. In addition, the jumps can occur with either random or regular periods, excluding thermal fluctuations as a possible origin for the jumps. Finally, while remaining at a fixed field, we warm the sample to above 350 mK, where the jumps disappear. Upon recooling the sample below this temperature, the jumps reappear, indicating that the jumps do not result from nearly dissipationless eddy currents either. △ Less

Submitted 15 April, 2008; originally announced April 2008.

Tunneling between Dilute GaAs Hole Layers

Authors: S. Misra, N. C. Bishop, E. Tutuc, M. Shayegan

Abstract: We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but the peak amplitude is much larger than expected from the available hole band parameters. Data as a function of parallel magnetic field reveal additional anomal… ▽ More We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but the peak amplitude is much larger than expected from the available hole band parameters. Data as a function of parallel magnetic field reveal additional anomalous features, including a recurrence of a zero-bias tunneling peak at very large fields. In a perpendicular magnetic field, we observe a robust and narrow tunneling peak at total filling factor $ν_T=1$, signaling the formation of a bilayer quantum Hall ferromagnet. △ Less

Submitted 24 October, 2007; v1 submitted 8 June, 2007; originally announced June 2007.

Comments: Revised to include additional data, new discussions

Magnetic phase diagram of Ce2Fe17

Authors: Y. Janssen, S. Chang, A. Kreyssig, A. Kracher, Y. Mozharivskyj, S. Misra, P. C. Canfield

Abstract: Rare-earth-based permanent-magnet materials rich in iron have relatively low ferromagnetic ordering temperatures. This is believed to be due to the presence of antiferromagnetic exchange interactions, besides the ferromagnetic interactions responsible for the magnetic order. The magnetic properties of Ce2Fe17 are anomalous. Instead of ferromagnetic, it is antiferromagnetic, and instead of one or… ▽ More Rare-earth-based permanent-magnet materials rich in iron have relatively low ferromagnetic ordering temperatures. This is believed to be due to the presence of antiferromagnetic exchange interactions, besides the ferromagnetic interactions responsible for the magnetic order. The magnetic properties of Ce2Fe17 are anomalous. Instead of ferromagnetic, it is antiferromagnetic, and instead of one ordering temperature, it shows two, at the Neel temperature TN ~ 208 K and at TT ~ 124 K. Ce2Fe17, doped by 0.5% Ta, also shows two ordering temperatures, one to an antiferromagnetic phase, at TN ~ 214 K, and one to a ferromagnetic phase, at T0 ~ 75 K. In order to clarify this behavior, single-crystalline samples were prepared by solution growth, and characterized by electron microscopy, single crystal x-ray diffraction, temperature-dependent specific heat, and magnetic field and temperature-dependent electrical resistivity and magnetization. From these measurements, magnetic H-T phase diagrams were determined for both Ta-doped Ce2Fe17 and undoped Ce2Fe17. These phase diagrams can be very well described in terms of a theory that gives magnetic phase diagrams of systems with competing antiferro- and ferromagnetism. △ Less

Submitted 23 December, 2006; originally announced December 2006.

Comments: 18 pages, 16 figures, submitted to PRB

Ferromagnetism in the Mott insulator Ba2NaOsO6

Authors: A. S. Erickson, S. Misra, G. J. Miller, R. R. Gupta, Z. Schlesinger, W. A. Harrison, J. M. Kim, I. R. Fisher

Abstract: Results are presented of single crystal structural, thermodynamic, and reflectivity measurements of the double-perovskite Ba2NaOsO6. These characterize the material as a 5d^1 ferromagnetic Mott insulator with an ordered moment of ~0.2 Bohr magnetons per formula unit and TC = 6.8(3) K. The magnetic entropy associated with this phase transition is close to Rln2, indicating that the quartet grounds… ▽ More Results are presented of single crystal structural, thermodynamic, and reflectivity measurements of the double-perovskite Ba2NaOsO6. These characterize the material as a 5d^1 ferromagnetic Mott insulator with an ordered moment of ~0.2 Bohr magnetons per formula unit and TC = 6.8(3) K. The magnetic entropy associated with this phase transition is close to Rln2, indicating that the quartet groundstate anticipated from consideration of the crystal structure is split, consistent with a scenario in which the ferromagnetism is associated with orbital ordering. △ Less

Submitted 7 May, 2007; v1 submitted 13 October, 2006; originally announced October 2006.

Comments: 5 pages, 5 figures, added references

Observation of Quantum Hall Valley Skyrmions

Authors: Y. P. Shkolnikov, S. Misra, N. C. Bishop, E. P. De Poortere, M. Shayegan

Abstract: We report measurements of the interaction-induced quantum Hall effect in a spin-polarized AlAs two-dimensional electron system where the electrons occupy two in-plane conduction band valleys. Via the application of in-plane strain, we tune the energies of these valleys and measure the energy gap of the quantum Hall state at filling factor $ν$ = 1. The gap has a finite value even at zero strain a… ▽ More We report measurements of the interaction-induced quantum Hall effect in a spin-polarized AlAs two-dimensional electron system where the electrons occupy two in-plane conduction band valleys. Via the application of in-plane strain, we tune the energies of these valleys and measure the energy gap of the quantum Hall state at filling factor $ν$ = 1. The gap has a finite value even at zero strain and, with strain, rises much faster than expected from a single-particle picture, suggesting that the lowest energy charged excitations at $ν=1$ are "valley Skyrmions". △ Less

Submitted 5 May, 2005; originally announced May 2005.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 95, 066809 (2005)

Failure of Scattering Interference in the Pseudogap State of Cuprate Superconductors

Authors: S. Misra, M. Vershinin, P. Phillips, A. Yazdani

Abstract: We calculate scattering interference patterns for various electronic states proposed for the pseudogap regime of the cuprate superconductors. The scattering interference models all produce patterns whose wavelength changes as a function of energy, in contradiction to the energy-independent wavelength seen by scanning tunneling microscopy (STM) experiments in the pseudogap state. This suggests th… ▽ More We calculate scattering interference patterns for various electronic states proposed for the pseudogap regime of the cuprate superconductors. The scattering interference models all produce patterns whose wavelength changes as a function of energy, in contradiction to the energy-independent wavelength seen by scanning tunneling microscopy (STM) experiments in the pseudogap state. This suggests that the patterns seen in STM local density of states measurements are not due to scattering interference, but are rather the result of some form of ordering. △ Less

Submitted 10 May, 2004; originally announced May 2004.

Comments: To be submitted to Phys. Rev. B

Local Ordering in the Pseudogap State of the High-T$_c$ Superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$

Authors: Michael Vershinin, Shashank Misra, S. Ono, Y. Abe, Yoichi Ando, Ali Yazdani

Abstract: We report atomic scale characterization of the pseudogap state in a high-T$_c$ superconductor, Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$. The electronic states at low energies within the pseudogap exhibit spatial modulations having an energy-independent incommensurate periodicity. These patterns, which are oriented along the copper-oxygen bond directions, appear to be a consequence of an electronic ordering… ▽ More We report atomic scale characterization of the pseudogap state in a high-T$_c$ superconductor, Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$. The electronic states at low energies within the pseudogap exhibit spatial modulations having an energy-independent incommensurate periodicity. These patterns, which are oriented along the copper-oxygen bond directions, appear to be a consequence of an electronic ordering phenomenon--the observation of which correlates with the pseudogap in the density of electronic states. Our results provide a stringent test for various ordering scenarios in the cuprates, which have been central in the debate on the nature of the pseudogap and the complex electronic phase diagram of these compounds. △ Less

Submitted 11 February, 2004; originally announced February 2004.

Comments: To appear on Science Express, http://www.sciencemag.org/sciencexpress/recent.shtml, 19 pages, 4 figures, pdf only

Atomic Scale Imaging and Spectroscopy of a CuO_2 Plane at the Surface of Bi_2Sr_2CaCu_2O_{8+delta}

Authors: S. Misra, S. Oh, D. J. Hornbaker, T. DiLuccio, J. N. Eckstein, A. Yazdani

Abstract: We have used a scanning tunneling microscope to demonstrate that a single CuO_2 plane can form a stable and atomically ordered layer at the surface of Bi_2Sr_2CaCu_2O_{8+delta}. In contrast to previous studies on high-T_c surfaces, the CuO_2-terminated surface exhibits a strongly suppressed tunneling conductance at low voltages. We consider a number of different explanations for this phenomena a… ▽ More We have used a scanning tunneling microscope to demonstrate that a single CuO_2 plane can form a stable and atomically ordered layer at the surface of Bi_2Sr_2CaCu_2O_{8+delta}. In contrast to previous studies on high-T_c surfaces, the CuO_2-terminated surface exhibits a strongly suppressed tunneling conductance at low voltages. We consider a number of different explanations for this phenomena and propose that it may be caused by how the orbital symmetry of the CuO_2 plane's electronic states affects the tunneling process. △ Less

Submitted 2 August, 2002; originally announced August 2002.

Comments: to be published in PRL vol. 89, issue 8

Evolution of the quasiparticle spectral function in cuprates

Authors: S. Misra, R. Gatt, T. Schmauder, Andrey V. Chubukov, M. Onellion, M. Zacchigna, I. Vobornik, F. Zwick, M. Grioni, G. Margaritondo, C. Quitmann, C. Kendziora

Abstract: We analyzed photoemssion data for several do** levels of the Bi_2Sr_2CaCu_2O_{8+x} compounds, ranging from overdoped to underdoped. We show that the high frequency part of the spectra near (0,π) can be described by Fermi liquid theory in the overdoped regime, but exhibits a non-Fermi liquid behavior in the underdoped regime. We further demonstrate that this novel behavior fits reasonably well… ▽ More We analyzed photoemssion data for several do** levels of the Bi_2Sr_2CaCu_2O_{8+x} compounds, ranging from overdoped to underdoped. We show that the high frequency part of the spectra near (0,π) can be described by Fermi liquid theory in the overdoped regime, but exhibits a non-Fermi liquid behavior in the underdoped regime. We further demonstrate that this novel behavior fits reasonably well to a 1/\sqrtω behavior suggested for systems with strong spin fluctuations. △ Less

Submitted 22 May, 1998; originally announced May 1998.

Comments: 5 pages, 2 figures (EPS), RevTeX, submitted to Phys Rev B RC

Report number: UW-98-01