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k-resolved ultrafast light-induced band renormalization in monolayer WS$_2$ on graphene
Authors:
Niklas Hofmann,
Alexander Steinhoff,
Razvan Krause,
Neeraj Mishra,
Giorgio Orlandini,
Stiven Forti,
Camilla Coletti,
Tim O. Wehling,
Isabella Gierz
Abstract:
Understanding and controlling the electronic properties of two-dimensional materials is crucial for their potential applications in nano- and optoelectronics. Monolayer transition metal dichalcogenides such as WS$_2$ have garnered significant interest due to their strong light-matter interaction and extreme sensitivity of the band structure to the presence of photogenerated electron-hole pairs. In…
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Understanding and controlling the electronic properties of two-dimensional materials is crucial for their potential applications in nano- and optoelectronics. Monolayer transition metal dichalcogenides such as WS$_2$ have garnered significant interest due to their strong light-matter interaction and extreme sensitivity of the band structure to the presence of photogenerated electron-hole pairs. In this study, we investigate the transient electronic structure of monolayer WS$_2$ on a graphene substrate after resonant excitation of the A-exciton using time- and angle-resolved photoemission spectroscopy. We observe a pronounced band structure renormalization including a substantial reduction of the transient band gap that is in good quantitative agreement with our {\it ab initio} theory that reveals the importance of both intrinsic WS$_2$ and extrinsic substrate contributions to the transient band structure of monolayer WS$_2$. Our findings not only deepen the fundamental understanding of band structure dynamics in two-dimensional materials but also offer valuable insights for the development of novel electronic and optoelectronic devices based on monolayer TMDs and their heterostructures with graphene.
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Submitted 2 May, 2024;
originally announced May 2024.
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Non-equilibrium carrier dynamics and band structure of graphene on 2D tin
Authors:
Maria-Elisabeth Federl,
Niklas Witt,
Biao Yang,
Niklas Hofmann,
Johannes Gradl,
Leonard Weigl,
Ignacio Piquero-Zulaica,
Johannes V. Barth,
Neeraj Mishra,
Camilla Coletti,
Tim O. Wehling,
Isabella Gierz
Abstract:
Intercalation of epitaxial graphene on SiC(0001) with Sn results in a well-ordered 2D metallic Sn phase with a $(1\times1)$ structure at the interface between SiC substrate and quasi-freestanding graphene. The 2D\,Sn phase exhibits exotic electronic properties with Dirac-like and flat bands coexisting close to the Fermi level that exhibit both Zeeman- and Rashba-type spin splittings. Possible inte…
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Intercalation of epitaxial graphene on SiC(0001) with Sn results in a well-ordered 2D metallic Sn phase with a $(1\times1)$ structure at the interface between SiC substrate and quasi-freestanding graphene. The 2D\,Sn phase exhibits exotic electronic properties with Dirac-like and flat bands coexisting close to the Fermi level that exhibit both Zeeman- and Rashba-type spin splittings. Possible inter-layer interactions between the 2D\,Sn layer and graphene that may result in emerging electronic properties remain unexplored. We use time- and angle-resolved photoemission spectroscopy to reveal a surprisingly short-lived non-equilibrium carrier distribution inside the Dirac cone of graphene. Further, we find that the graphene $π$-band exhibits a transient down-shift that we attribute to charging of the graphene layer with holes. We interpret our results with support from density functional theory calculations of the graphene - 2D\,Sn heterostructure that reveal a substantial hybridization between graphene $π$-band and Sn $p_z$-states that opens up a $\sim230$\,meV band gap inside the Dirac cone and delocalizes the charge carriers over both the graphene and 2D\,Sn layers. Our results have important implications for the design of future ultrafast optoelectronic devices that may find applications in the fields of light harvesting and detection, as supercapacitors, or in novel quantum computing technologies.
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Submitted 2 May, 2024;
originally announced May 2024.
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Stability of fractional Chern insulators with a non-Landau level continuum limit
Authors:
Bartholomew Andrews,
Mathi Raja,
Nimit Mishra,
Michael P. Zaletel,
Rahul Roy
Abstract:
The stability of fractional Chern insulators is widely believed to be predicted by the resemblance of their single-particle spectra to Landau levels. We investigate the scope of this geometric stability hypothesis by analyzing the stability of a set of fractional Chern insulators that explicitly do not have a Landau level continuum limit. By computing the many-body spectra of Laughlin states in a…
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The stability of fractional Chern insulators is widely believed to be predicted by the resemblance of their single-particle spectra to Landau levels. We investigate the scope of this geometric stability hypothesis by analyzing the stability of a set of fractional Chern insulators that explicitly do not have a Landau level continuum limit. By computing the many-body spectra of Laughlin states in a generalized Hofstadter model, we analyze the relationship between single-particle metrics, such as trace inequality saturation, and many-body metrics, such as the magnitude of the many-body and entanglement gaps. We show numerically that the geometric stability hypothesis holds for Chern bands that are not continuously connected to Landau levels, as well as conventional Chern bands, albeit often requiring larger system sizes to converge for these configurations.
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Submitted 3 June, 2024; v1 submitted 9 October, 2023;
originally announced October 2023.
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Link between interlayer hybridization and ultrafast charge transfer in WS$_2$-graphene heterostructures
Authors:
Niklas Hofmann,
Leonard Weigl,
Johannes Gradl,
Neeraj Mishra,
Giorgio Orlandini,
Stiven Forti,
Camilla Coletti,
Simone Latini,
Lede Xian,
Angel Rubio,
Dilan Perez Paredes,
Raul Perea Causin,
Samuel Brem,
Ermin Malic,
Isabella Gierz
Abstract:
Ultrafast charge separation after photoexcitation is a common phenomenon in various van-der-Waals (vdW) heterostructures with great relevance for future applications in light harvesting and detection. Theoretical understanding of this phenomenon converges towards a coherent mechanism through charge transfer states accompanied by energy dissipation into strongly coupled phonons. The detailed micros…
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Ultrafast charge separation after photoexcitation is a common phenomenon in various van-der-Waals (vdW) heterostructures with great relevance for future applications in light harvesting and detection. Theoretical understanding of this phenomenon converges towards a coherent mechanism through charge transfer states accompanied by energy dissipation into strongly coupled phonons. The detailed microscopic pathways are material specific as they sensitively depend on the band structures of the individual layers, the relative band alignment in the heterostructure, the twist angle between the layers, and interlayer interactions resulting in hybridization. We used time- and angle-resolved photoemission spectroscopy combined with tight binding and density functional theory electronic structure calculations to investigate ultrafast charge separation and recombination in WS$_2$-graphene vdW heterostructures. We identify several avoided crossings in the band structure and discuss their relevance for ultrafast charge transfer. We relate our own observations to existing theoretical models and propose a unified picture for ultrafast charge transfer in vdW heterostructures where band alignment and twist angle emerge as the most important control parameters.
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Submitted 21 March, 2023;
originally announced March 2023.
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Ultra-clean high-mobility graphene on technologically relevant substrates
Authors:
Ayush Tyagi,
Vaidotas Mišeikis,
Leonardo Martini,
Stiven Forti,
Neeraj Mishra,
Zewdu M. Gebeyehu,
Marco A. Giambra,
Jihene Zribi,
Mathieu Frégnaux,
Damien Aureau,
Marco Romagnoli,
Fabio Beltram,
Camilla Coletti
Abstract:
Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of optoelectronics and photonics. Most of these applications require low-contaminated high-mobility graphene (i.e., approaching 10 000 $cm^2 V^{-1} s^{-1}$) at room te…
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Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of optoelectronics and photonics. Most of these applications require low-contaminated high-mobility graphene (i.e., approaching 10 000 $cm^2 V^{-1} s^{-1}$) at room temperature) to reduce device losses and implement compact device design. To date, these mobility values are only obtained when suspending or encapsulating graphene. Here, we demonstrate a rapid, facile, and scalable cleaning process, that yields high-mobility graphene directly on the most common technologically relevant substrate: silicon dioxide on silicon (SiO$_2$/Si). Atomic force microscopy (AFM) and spatially-resolved X-ray photoelectron spectroscopy (XPS) demonstrate that this approach is instrumental to rapidly eliminate most of the polymeric residues which remain on graphene after transfer and fabrication and that have adverse effects on its electrical properties. Raman measurements show a significant reduction of graphene do** and strain. Transport measurements of 50 Hall bars (HBs) yield hole mobility $μ_h$ up to 9000 $cm^2 V^{-1} s^{-1}$ and electron mobility $μ_e$ up to 8000 $cm^2 V^{-1} s^{-1}$, with average values $μ_h$ 7500 $cm^2 V^{-1} s^{-1}$ and $μ_e$ 6300 $cm^2 V^{-1} s^{-1}$. The carrier mobility of ultraclean graphene reach values nearly double of that measured in graphene HBs processed with acetone cleaning, which is the method widely adopted in the field. Notably, these mobility values are obtained over large-scale and without encapsulation, thus paving the way to the adoption of graphene in optoelectronics and photonics.
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Submitted 1 September, 2021;
originally announced September 2021.
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Thermal stability of monolayer $WS_2$ in BEOL conditions
Authors:
Simona Pace,
Marzia Ferrera,
Domenica Convertino,
Giulia Piccinini,
Michele Magnozzi,
Neeraj Mishra,
Stiven Forti,
Francesco Bisio,
Maurizio Canepa,
Filippo Fabbri,
Camilla Coletti
Abstract:
Monolayer tungsten disulfide ($WS_2$) has recently attracted large interest as a promising material for advanced electronic and optoelectronic devices such as photodetectors, modulators, and sensors. Since these devices can be integrated in a silicon (Si) chip via back-end-of-line (BEOL) processes, the stability of monolayer $WS_2$ in BEOL fabrication conditions should be studied. In this work, th…
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Monolayer tungsten disulfide ($WS_2$) has recently attracted large interest as a promising material for advanced electronic and optoelectronic devices such as photodetectors, modulators, and sensors. Since these devices can be integrated in a silicon (Si) chip via back-end-of-line (BEOL) processes, the stability of monolayer $WS_2$ in BEOL fabrication conditions should be studied. In this work, the thermal stability of monolayer single-crystal $WS_2$ at typical BEOL conditions is investigated; namely (i) heating temperature of $300$ $^\circ C$, (ii) pressures in the medium- ($10^{-3}$ mbar) and high- ($10^{-8}$ mbar) vacuum range; (iii) heating times from $30$ minutes to $20$ hours. Structural, optical and chemical analyses of $WS_2$ are performed via scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). It is found that monolayer single-crystal $WS_2$ is intrinsically stable at these temperature and pressures, even after $20$ hours of thermal treatment. The thermal stability of $WS_2$ is also preserved after exposure to low-current electron beam ($12$ pA) or low-fluence laser ($0.9$ $mJ/μm^2$), while higher laser fluencies cause photo-activated degradation upon thermal treatment. These results are instrumental to define fabrication and in-line monitoring procedures that allow the integration of $WS_2$ in device fabrication flows without compromising the material quality.
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Submitted 16 December, 2020;
originally announced December 2020.
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2D MoSe2 as a Promising Chemo-resistive Sensor for N2O Detection: A DFT Approach
Authors:
N. Mishra,
Bramha P. Pandey
Abstract:
We have investigated the impact of toxic N2O gas upon structural and electronic properties of 2D MoSe2 monolayer using DFT approach. In this work, as a result of N2O gas absorption, charge transfer, band gap and density of states (DOS) are changed and these parameters are extracted as electronic properties of 2D MoSe2 monolayer nano-gas sensor. Moreover, the band gap is tunable upon the N2O gas ab…
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We have investigated the impact of toxic N2O gas upon structural and electronic properties of 2D MoSe2 monolayer using DFT approach. In this work, as a result of N2O gas absorption, charge transfer, band gap and density of states (DOS) are changed and these parameters are extracted as electronic properties of 2D MoSe2 monolayer nano-gas sensor. Moreover, the band gap is tunable upon the N2O gas absorption for pristine and adsorbed MoSe2 in both Top Mo (Top Se) structures. Also, the spin up and down states in the DOS results considerable magnetic moment altering the magnetic property of the 2D MoSe2 monolayer. Later, the desorption property of the 2D MoSe2 monolayer towards the target N2O gas molecule at three different temperature are calculated. Thus, the paper concludes with outcomes of the structural and electronic properties aligning its behavior as a chemo-resistive nano-gas sensor and showing it as a potential applicant for sensing of toxic N2O gas molecule. The nature of toxic N2O gas molecule is not explored till date using 2D monolayer, thus, in this work it is estimated through simulated results and the experimental verification is awaited.
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Submitted 15 August, 2020; v1 submitted 30 June, 2020;
originally announced June 2020.
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Synthesis of large-area rhombohedral few-layer graphene by chemical vapor deposition on copper
Authors:
Chamseddine Bouhafs,
Sergio Pezzini,
Neeraj Mishra,
Vaidotas Mišeikis,
Yuran Niu,
Claudia Struzzi,
Alexei A. Zakharov,
Stiven Forti,
Camilla Coletti
Abstract:
Rhombohedral-stacked few-layer graphene (FLG) has been receiving an ever-increasing attention owing to its peculiar electronic properties that could lead to enticing phenomena such as superconductivity and magnetic ordering. Up to now, experimental studies on such material have been mainly limited by the difficulty in isolating it in thickness exceeding 3 atomic layers with device-compatible size.…
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Rhombohedral-stacked few-layer graphene (FLG) has been receiving an ever-increasing attention owing to its peculiar electronic properties that could lead to enticing phenomena such as superconductivity and magnetic ordering. Up to now, experimental studies on such material have been mainly limited by the difficulty in isolating it in thickness exceeding 3 atomic layers with device-compatible size. In this work, rhombohedral graphene with thickness up to 9 layers and areas up to ~50 micrometers square is grown via chemical vapor deposition (CVD) on suspended Cu foils and transferred onto target substrates via etch-free delamination. The domains of rhombohedral FLG are identified by Raman spectroscopy and are found to alternate with domains of Bernal-stacked FLG within the same crystal in a stripe-like configuration. A combined analysis of micro-Raman map**, atomic force microscopy and optical microscopy indicates that the formation of rhombohedral-stacked FLG is strongly correlated to the copper substrate morphology. Cu step bunching results in bending of FLG and interlayer displacement along preferential crystallographic orientations, as determined experimentally by electron microscopy, thus inducing the stripe-like domains. The growth and transfer of rhombohedral FLG with the reported thickness and size shall facilitate the observation of predicted unconventional physics and ultimately add to its technological relevance.
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Submitted 11 June, 2020;
originally announced June 2020.
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Going beyond copper: wafer-scale synthesis of graphene on sapphire
Authors:
N. Mishra,
S. Forti,
F. Fabbri,
L. Martini,
C. McAleese,
B. Conran,
P. R. Whelan,
A. Shivayogimath,
L. Buß,
J. Falta,
I. Aliaj,
S. Roddaro,
J. I. Flege,
P. Bøggild,
K. B. K. Teo,
C. Coletti
Abstract:
The adoption of graphene in electronics, optoelectronics and photonics is hindered by the difficulty in obtaining high quality material on technologically-relevant substrates, over wafer-scale sizes and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-cataly…
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The adoption of graphene in electronics, optoelectronics and photonics is hindered by the difficulty in obtaining high quality material on technologically-relevant substrates, over wafer-scale sizes and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-catalysts or yielding defective graphene. In this work, we demonstrate a metal-free approach implemented in commercially available reactors to obtain high-quality monolayer graphene on c-plane sapphire substrates via chemical vapour deposition (CVD). We identify via low energy electron diffraction (LEED), low energy electron microscopy (LEEM) and scanning tunneling microscopy (STM) measurements the Al-rich reconstruction root31R9 of sapphire to be crucial for obtaining epitaxial graphene. Raman spectroscopy and electrical transport measurements reveal high-quality graphene with mobilities consistently above 2000 cm2/Vs. We scale up the process to 4-inch and 6-inch wafer sizes and demonstrate that metal contamination levels are within the limits for back-end-of-line (BEOL) integration. The growth process introduced here establishes a method for the synthesis of wafer-scale graphene films on a technologically viable basis.
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Submitted 2 July, 2019;
originally announced July 2019.
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A sensitive calorimetric technique to study energy (heat) exchange at the nano-scale
Authors:
Luca Basta,
Stefano Veronesi,
Yuya Murata,
Zoe Dubois,
Neeraj Mishra,
Filippo Fabbri,
Camilla Coletti,
Stefan Heun
Abstract:
Every time a chemical reaction occurs, an energy exchange between reactants and environment exists, which is defined as the enthalpy of the reaction. In the last decades, research has resulted in an increasing number of devices at the micro- or nano-scale. Sensors, catalyzers, and energy storage systems are more and more developed as nano-devices which represent the building blocks for commercial…
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Every time a chemical reaction occurs, an energy exchange between reactants and environment exists, which is defined as the enthalpy of the reaction. In the last decades, research has resulted in an increasing number of devices at the micro- or nano-scale. Sensors, catalyzers, and energy storage systems are more and more developed as nano-devices which represent the building blocks for commercial "macroscopic" objects. A general method for the direct evaluation of the energy balance of such systems is not available at present. Calorimetry is a powerful tool to investigate energy exchange, but it usually needs macroscopic sample quantities. Here we report on the development of an original experimental setup able to detect temperature variations as low as 10 mK in a sample of 10 ng using a thermometer device having physical dimensions of 5x5 mm2. The technique has been utilized to measure the enthalpy release during the adsorption process of H2 on a titanium decorated monolayer graphene. The sensitivity of these thermometers is high enough to detect a hydrogen uptake of 10^(-10) moles, corresponding to 0.2 ng, with an enthalpy release of about 23 uJ. The experimental setup allows, in perspective, the scalability to even smaller sizes.
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Submitted 29 April, 2019;
originally announced April 2019.
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Structure-dependent electrical properties of graphene nanoribbon devices with graphene electrodes
Authors:
Leonardo Martini,
Zong** Chen,
Neeraj Mishra,
Gabriela Borin Barin,
Paolo Fantuzzi,
Pascal Ruffieux,
Roman Fasel,
Xinliang Feng,
Akimitsu Narita,
Camilla Coletti,
Klaus Müllen,
Andrea Candini
Abstract:
Graphene nanoribbons (GNRs) are a novel and intriguing class of materials in the field of nanoelectronics, since their properties, solely defined by their width and edge type, are controllable with high precision directly from synthesis. Here we study the correlation between the GNR structure and the corresponding device electrical properties. We investigated a series of field effect devices consi…
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Graphene nanoribbons (GNRs) are a novel and intriguing class of materials in the field of nanoelectronics, since their properties, solely defined by their width and edge type, are controllable with high precision directly from synthesis. Here we study the correlation between the GNR structure and the corresponding device electrical properties. We investigated a series of field effect devices consisting of a film of armchair GNRs with different structures (namely width and/or length) as the transistor channel, contacted with narrowly spaced graphene sheets as the source-drain electrodes. By analyzing several tens of junctions for each individual GNR type, we observe that the values of the output current display a width-dependent behavior, indicating electronic bandgaps in good agreement with the predicted theoretical values. These results provide insights into the link between the ribbon structure and the device properties, which are fundamental for the development of GNR-based electronics.
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Submitted 8 February, 2019;
originally announced February 2019.
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Broadband Defects Emission and Enhanced Ligand Raman Scattering in 0D Cs3Bi2I9 Colloidal Nanocrystals
Authors:
Giuseppe M. Paterno',
Nimai Mishra,
Alex J. Barker,
Zhiya Dang,
Guglielmo Lanzani,
Liberato Manna,
Annamaria Petrozza
Abstract:
Excitonic 0D and 2D lead-halide perovskites have been recently developed and investigated as new materials for light generation. Here we report broadband (> 1 eV) emission from newly synthesised zero-dimensional (0D) lead-free colloidal Cs3Bi2I9 nanocrystals. We investigate the nature of their emissive states as well as the relative dynamics which are currently hotly debated. In particular, we fin…
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Excitonic 0D and 2D lead-halide perovskites have been recently developed and investigated as new materials for light generation. Here we report broadband (> 1 eV) emission from newly synthesised zero-dimensional (0D) lead-free colloidal Cs3Bi2I9 nanocrystals. We investigate the nature of their emissive states as well as the relative dynamics which are currently hotly debated. In particular, we find that the broadband emission is made by the coexistence of emissive excitons and sub-bandgap emissive trap-states. Remarkably, we observe evidence of enhanced Raman scattering from the ligands when attached to the nanocrystals surface, an effect that we preliminary attribute to strong exciton-ligands electronic coupling in these systems.
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Submitted 19 November, 2018;
originally announced November 2018.
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Linear conduction in N-type organic field effect transistors with nanometric channel lengths and graphene as electrodes
Authors:
F. Chianese,
A. Candini,
M. Affronte,
N. Mishra,
C. Coletti,
A. Cassinese
Abstract:
In this work we test graphene electrodes in nano-metric channel n-type Organic Field EffectTransistors (OFETs) based on thermally evaporated thin films of perylene-3,4,9,10-tetracarboxylic acid diimide derivative (PDIF-CN2). By a thorough comparison with short channel transistors made with reference gold electrodes, we found that the output characteristics of the graphene-based devices respond lin…
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In this work we test graphene electrodes in nano-metric channel n-type Organic Field EffectTransistors (OFETs) based on thermally evaporated thin films of perylene-3,4,9,10-tetracarboxylic acid diimide derivative (PDIF-CN2). By a thorough comparison with short channel transistors made with reference gold electrodes, we found that the output characteristics of the graphene-based devices respond linearly to the applied biases, in contrast with the supra-linear trend of gold-based transistors. Moreover, short channel effects are considerably suppressed in graphene electrodes devices. More specifically, current on/off ratios independent of the channel length (L) and enhanced response for high longitudinal biases are demonstrated for L down to ~140 nm. These results are rationalized taking into account the morphological and electronic characteristics of graphene, showing that the use of graphene electrodes may help to overcome the problem of Space Charge Limited Current (SCLC) in short channel OFETs.
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Submitted 30 October, 2018;
originally announced October 2018.
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Rapid and catalyst-free CVD growth of graphene on hBN
Authors:
Neeraj Mishra,
Vaidotas Miseikis,
Domenica Convertino,
Mauro Gemmi,
Vincenzo Piazza,
Camilla Coletti
Abstract:
Recently, hexagonal boron nitride (h-BN) has been shown to act as an ideal substrate to graphene by greatly improving the material transport properties thanks to its atomically flat surface, low interlayer electronic coupling and almost perfect reticular matching. Chemical vapour deposition (CVD) is presently considered the most scalable approach to grow graphene directly on h-BN. However, for the…
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Recently, hexagonal boron nitride (h-BN) has been shown to act as an ideal substrate to graphene by greatly improving the material transport properties thanks to its atomically flat surface, low interlayer electronic coupling and almost perfect reticular matching. Chemical vapour deposition (CVD) is presently considered the most scalable approach to grow graphene directly on h-BN. However, for the catalyst-free approach, poor control over the shape and crystallinity of the graphene grains and low growth rates are typically reported. In this work we investigate the crystallinity of differently shaped grains and identify a path towards a real van der Waals epitaxy of graphene on h-BN by adopting a catalyst-free CVD process. We demonstrate the polycrystalline nature of circular-shaped pads and attribute the stemming of different oriented grains to airborne contamination of the h-BN flakes. We show that single-crystal grains with six-fold symmetry can be obtained by adopting high hydrogen partial pressures during growth. Notably, growth rates as high as 100 nm/min are obtained by optimizing growth temperature and pressure. The possibility of synthesizing single-crystal graphene on h-BN with appreciable growth rates by adopting a simple CVD approach is a step towards an increased accessibility of this promising van der Waals heterostructure.
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Submitted 28 July, 2016; v1 submitted 27 July, 2016;
originally announced July 2016.
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Enhanced Photoabsorption from Cobalt Implanted Rutile TiO2 (110) Surfaces
Authors:
Shalik Ram Joshi,
B. Padmanabhan,
Anupama Chanda,
Indrani Mishra,
V. K. Malik,
N. C. Mishra,
D. Kanjilal,
Shikha Varma
Abstract:
Present study investigates the photoabsorption properties of single crystal rutile TiO2 (110) surfaces after they have been implanted with low fluence of Cobalt ions. The surfaces, after implantation, demonstrate fabrication of nanostructures and anisotropic nano-ripple patterns. Creation of oxygen vacancies (Ti3+ states) as well as band gap modification for these samples is also observed. Results…
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Present study investigates the photoabsorption properties of single crystal rutile TiO2 (110) surfaces after they have been implanted with low fluence of Cobalt ions. The surfaces, after implantation, demonstrate fabrication of nanostructures and anisotropic nano-ripple patterns. Creation of oxygen vacancies (Ti3+ states) as well as band gap modification for these samples is also observed. Results presented here demonstrate that fabrication of self organized nanostructures and development of oxygen vacancies, upon cobalt implantation, promote the enhancement of photoabsorbance in both UV (2 times) and visible (5 times) regimes. These investigations on nanostructured TiO2 surfaces can be important for photo- catalysis.
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Submitted 18 November, 2015;
originally announced November 2015.
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A comparative study on low-memory iterative solvers for FFT-based homogenization of periodic media
Authors:
Nachiketa Mishra,
Jaroslav Vondřejc,
Jan Zeman
Abstract:
In this paper, we assess the performance of four iterative algorithms for solving non-symmetric rank-deficient linear systems arising in the FFT-based homogenization of heterogeneous materials defined by digital images. Our framework is based on the Fourier-Galerkin method with exact and approximate integrations that has recently been shown to generalize the Lippmann-Schwinger setting of the origi…
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In this paper, we assess the performance of four iterative algorithms for solving non-symmetric rank-deficient linear systems arising in the FFT-based homogenization of heterogeneous materials defined by digital images. Our framework is based on the Fourier-Galerkin method with exact and approximate integrations that has recently been shown to generalize the Lippmann-Schwinger setting of the original work by Moulinec and Suquet from 1994. It follows from this variational format that the ensuing system of linear equations can be solved by general-purpose iterative algorithms for symmetric positive-definite systems, such as the Richardson, the Conjugate gradient, and the Chebyshev algorithms, that are compared here to the Eyre-Milton scheme - the most efficient specialized method currently available. Our numerical experiments, carried out for two-dimensional elliptic problems, reveal that the Conjugate gradient algorithm is the most efficient option, while the Eyre-Milton method performs comparably to the Chebyshev semi-iteration. The Richardson algorithm, equivalent to the still widely used original Moulinec-Suquet solver, exhibits the slowest convergence. Besides this, we hope that our study highlights the potential of the well-established techniques of numerical linear algebra to further increase the efficiency of FFT-based homogenization methods.
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Submitted 21 May, 2016; v1 submitted 9 August, 2015;
originally announced August 2015.
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Graphene as a p-type metal for ultimate miniaturization
Authors:
Francesca Iacopi,
Tim Gould,
John J. Boeckl,
Neeraj Mishra,
Dayle Goding,
Aiswarya Pradeepkumar,
Benjamin V. Cunning,
Barry Wood,
Ryan E. Brock,
Reinhold H. Dauskardt,
Sima Dimitrijev
Abstract:
We report macroscopic sheets of highly conductive bilayer graphene with exceptionally high hole concentrations of ~ $10^{15}$ $cm^{-2}$ and unprecedented sheet resistances of 20-25 Ω per square over macroscopic scales, and obtained in-situ over a thin cushion of molecular oxygen on a silicon substrate. The electric and electronic properties of this specific configuration remain stable upon thermal…
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We report macroscopic sheets of highly conductive bilayer graphene with exceptionally high hole concentrations of ~ $10^{15}$ $cm^{-2}$ and unprecedented sheet resistances of 20-25 Ω per square over macroscopic scales, and obtained in-situ over a thin cushion of molecular oxygen on a silicon substrate. The electric and electronic properties of this specific configuration remain stable upon thermal anneals and months of exposure to air. We further report a complementary ab-initio study, predicting an enhancement of graphene adhesion energy of up to a factor 20, also supported by experimental fracture tests. Our results show that the remarkable properties of graphene can be realized in a reliable fashion using a high-throughput process. In addition to providing exceptional material properties, the growth process we employed is scalable to large areas so that the outstanding conduction properties of graphene can be harnessed in devices fabricated via conventional semiconductor manufacturing processes. We anticipate that the approach will provide the necessary scalability and reliability for future developments in the graphene nanoscience and technology fields, especially in areas where further miniaturization is hampered by size effects and electrical reliability of classical conductors.
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Submitted 7 July, 2016; v1 submitted 20 March, 2015;
originally announced March 2015.
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Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor
Authors:
Vaidotas Miseikis,
Domenica Convertino,
Neeraj Mishra,
Mauro Gemmi,
Torge Mashoff,
Stefan Heun,
Niloofar Haghighian,
Francesco Bisio,
Maurizio Canepa,
Vincenzo Piazza,
Camilla Coletti
Abstract:
In this work we present a simple pathway to obtain large single-crystal graphene on copper (Cu) foils with high growth rates using a commercially available cold-wall chemical vapour deposition (CVD) reactor. We show that graphene nucleation density is drastically reduced and crystal growth is accelerated when: i) using ex-situ oxidised foils; ii) performing annealing in an inert atmosphere prior t…
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In this work we present a simple pathway to obtain large single-crystal graphene on copper (Cu) foils with high growth rates using a commercially available cold-wall chemical vapour deposition (CVD) reactor. We show that graphene nucleation density is drastically reduced and crystal growth is accelerated when: i) using ex-situ oxidised foils; ii) performing annealing in an inert atmosphere prior to growth; iii) enclosing the foils to lower the precursor im**ement flux during growth. Growth rates as high as 14.7 and 17.5 micrometers per minute are obtained on flat and folded foils, respectively. Thus, single-crystal grains with lateral size of about one millimetre can be obtained in just one hour. The samples are characterised by optical microscopy, scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy as well as selected area electron diffraction (SAED) and low-energy electron diffraction (LEED), which confirm the high quality and homogeneity of the films. The development of a process for the quick production of large grain graphene in a commonly used commercial CVD reactor is a significant step towards an increased accessibility to millimetre-sized graphene crystals.
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Submitted 26 January, 2015;
originally announced January 2015.
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Dynamic Lattice Distortions in Sr$_2$RuO$_4$: A microscopic study by perturbed angular correlation (TDPAC) spectroscopy
Authors:
S. N. Mishra,
M. Rots,
S. Cottenier
Abstract:
Applying time differential perturbed angular correlation (TDPAC) spectroscopy and \emph{ab initio} calculations, we have investigated possible lattice instabilities in Sr$_{2}$RuO$_{4}$ by studying the electric quadrupole interaction of a $^{111}$Cd probe at the Ru site. We find evidence for a dynamic lattice distortion, revealed from the observations of: (i) a rapidly fluctuating electric-field…
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Applying time differential perturbed angular correlation (TDPAC) spectroscopy and \emph{ab initio} calculations, we have investigated possible lattice instabilities in Sr$_{2}$RuO$_{4}$ by studying the electric quadrupole interaction of a $^{111}$Cd probe at the Ru site. We find evidence for a dynamic lattice distortion, revealed from the observations of: (i) a rapidly fluctuating electric-field gradient (EFG) tensor of which the main component decreases with decreasing temperature, and (ii) a monotonic increase of the EFG asymmetry ($η$) below 300 K. We argue that the observed dynamic lattice distortion is caused by strong spin fluctuations associated with the inherent magnetic instability of Sr$_{2}$RuO$_{4}$.
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Submitted 4 January, 2007;
originally announced January 2007.
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Local magnetism of isolated Mo atoms at substitutional and interstitial sites in Yb metal : Experiment and Theory
Authors:
A. A. Tulapurkar,
S. N. Mishra,
R. G. Pillay,
H. G. Salunke,
G. P. Das,
S. Cottenier
Abstract:
Using TDPAD experiment and local spin density calculations, we have observed large 4d moments on isolated Mo atoms at substitutional and octahedral interstitial lattice sites in Yb metal, showing Curie-Weiss local susceptibility and Korringa like spin relaxation rate. As a surprising feature, despite strong hybridization with the Yb neighbours, interstitial Mo atoms show high moment stability wi…
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Using TDPAD experiment and local spin density calculations, we have observed large 4d moments on isolated Mo atoms at substitutional and octahedral interstitial lattice sites in Yb metal, showing Curie-Weiss local susceptibility and Korringa like spin relaxation rate. As a surprising feature, despite strong hybridization with the Yb neighbours, interstitial Mo atoms show high moment stability with small Kondo temperature. While, magnetism of Mo, at substitutional site is consistent with Kondo type antiferromagnetic d-sp exchange interaction, we suggest that moment stability at the interstitial site is strongly influenced by ferromagnetic polarization of Yb-4f5d band electrons.
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Submitted 4 May, 2000;
originally announced May 2000.
