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Sliding-dependent electronic structures of alternating-twist tetralayer graphene
Authors:
Kyung** Shin,
Jiseon Shin,
Yoonsung Lee,
Hongki Min,
Jeil Jung
Abstract:
We study the electronic structure of alternating-twist tetralayer graphene, especially near its magic angle $θ= 1.75^\circ$, for different AA, AB, and SP sliding geometries at their middle interface that divides two twisted bilayer graphenes. This sliding dependence is shown for the bandwidths, bandgaps, and $K$-valley Chern numbers of the lowest-energy valence and conduction bands as a function o…
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We study the electronic structure of alternating-twist tetralayer graphene, especially near its magic angle $θ= 1.75^\circ$, for different AA, AB, and SP sliding geometries at their middle interface that divides two twisted bilayer graphenes. This sliding dependence is shown for the bandwidths, bandgaps, and $K$-valley Chern numbers of the lowest-energy valence and conduction bands as a function of twist angle and interlayer potential difference. Our analysis reveals that the AA sliding is most favorable for narrow bands and gaps, and the AB sliding is most prone to develo** finite valley Chern numbers. We further analyze the linear longitudinal optical absorptions as a function of photon energy and the absorption map in the moiré Brillouin zone for specific transition energies. A self-consistent Hartree calculation reveals that the AA system's electronic structure is most sensitive to variations in carrier density.
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Submitted 17 June, 2024;
originally announced June 2024.
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Effect of trivial bands on chiral anomaly-induced longitudinal magnetoconductivity in Weyl semimetals
Authors:
Jeonghyeon Suh,
Hongki Min
Abstract:
Including the effect of the trivial band near Weyl nodes, we evaluate the longitudinal magnetoconductivity (LMC) of Weyl semimetals along the magnetic field direction using the Boltzmann magnetotransport theory, and study its dependence on the magnetic field, Fermi energy, and temperature. We find that for weak internode and node-trivial band scatterings, the LMC is quadratic in the magnetic field…
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Including the effect of the trivial band near Weyl nodes, we evaluate the longitudinal magnetoconductivity (LMC) of Weyl semimetals along the magnetic field direction using the Boltzmann magnetotransport theory, and study its dependence on the magnetic field, Fermi energy, and temperature. We find that for weak internode and node-trivial band scatterings, the LMC is quadratic in the magnetic field and is inversely proportional to the fourth power of the Fermi energy at high densities due to internode scatterings, and to the square of the Fermi energy at low densities due to scatterings between a Weyl node and the trivial band. In the case of strong internode and nodetrivial band scatterings, the magnetic field-driven anisotropy induced by the phase-space volume element and the orbital magnetic moment cannot be neglected. As a result, the LMC exhibits a significantly different trend compared to that in the weak internode and node-trivial band scattering limit. Finally, we calculate the temperature dependence of the LMC in the strong inelastic scattering limit and obtain its asymptotic behaviors at low and high temperatures, respectively, demonstrating that the temperature dependence is strongly affected by the existence of the trivial band.
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Submitted 24 January, 2024;
originally announced January 2024.
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Sub-MeV Dark Matter Detection with Bilayer Graphene
Authors:
Anirban Das,
Jiho Jang,
Hongki Min
Abstract:
After decades of effort in a number of dark matter direct detection experiments, we still do not have any conclusive signal yet. Therefore it is high time we broaden our horizon by building experiments with increased sensitivity for light dark matter, specifically in the sub-MeV mass regime. In this paper, we propose a new detector material, a bilayer stack of graphene for this purpose. Its voltag…
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After decades of effort in a number of dark matter direct detection experiments, we still do not have any conclusive signal yet. Therefore it is high time we broaden our horizon by building experiments with increased sensitivity for light dark matter, specifically in the sub-MeV mass regime. In this paper, we propose a new detector material, a bilayer stack of graphene for this purpose. Its voltage-tunable low energy sub-eV electronic band gap makes it an excellent choice for the detector material of a light dark matter search experiment. We compute its dielectric function using the random phase approximation and estimate the projected sensitivity for sub-MeV dark matter-electron scattering and sub-eV dark matter absorption. We show that a bilayer graphene dark matter detector can have competitive sensitivity as other candidate target materials, like a superconductor, in this mass regime. The dark matter scattering rate in bilayer graphene is also characterized by a daily modulation from the rotation of the Earth which may help us mitigate the backgrounds in a future experiment.
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Submitted 1 December, 2023;
originally announced December 2023.
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Chirality and correlations in the spontaneous spin-valley polarization of rhombohedral multilayer graphene
Authors:
Yunsu Jang,
Youngju Park,
Jeil Jung,
Hongki Min
Abstract:
We investigate the total energies of spontaneous spin-valley polarized states in bi-, tri-, and tetralayer rhombohedral graphene where the long-range Coulomb correlations are accounted for within the random phase approximation. Our analysis of the phase diagrams for varying carrier do** and perpendicular electric fields shows that the exchange interaction between chiral electrons is the main dri…
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We investigate the total energies of spontaneous spin-valley polarized states in bi-, tri-, and tetralayer rhombohedral graphene where the long-range Coulomb correlations are accounted for within the random phase approximation. Our analysis of the phase diagrams for varying carrier do** and perpendicular electric fields shows that the exchange interaction between chiral electrons is the main driver of spin-valley polarization, while the presence of Coulomb correlations brings the flavor polarization phase boundaries to carrier densities close to the complete filling of the Mexican hat shape top at the Dirac points. We find that the tendency towards spontaneous spin-valley polarization is enhanced with the chirality of the bands and therefore with increasing number of layers.
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Submitted 12 July, 2023; v1 submitted 15 April, 2023;
originally announced April 2023.
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Optical transitions of a single nodal ring in SrAs$_3$: radially and axially resolved characterization
Authors:
Jiwon Jeon,
Jiho Jang,
Hoil Kim,
Taesu Park,
DongWook Kim,
Soonjae Moon,
Jun Sung Kim,
Ji Hoon Shim,
Hongki Min,
Eunjip Choi
Abstract:
SrAs$_3$ is a unique nodal-line semimetal that contains only a single nodal ring in the Brillouin zone, uninterrupted by any trivial bands near the Fermi energy. We performed axis-resolved optical reflection measurements on SrAs$_3$ and observed that the optical conductivity exhibits flat absorption up to 129 meV in both the radial and axial directions, confirming the robustness of the universal p…
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SrAs$_3$ is a unique nodal-line semimetal that contains only a single nodal ring in the Brillouin zone, uninterrupted by any trivial bands near the Fermi energy. We performed axis-resolved optical reflection measurements on SrAs$_3$ and observed that the optical conductivity exhibits flat absorption up to 129 meV in both the radial and axial directions, confirming the robustness of the universal power-law behavior of the nodal ring. Furthermore, in conjunction with model and first-principles calculations, the axis-resolved optical conductivity unveiled fundamental properties beyond the flat absorption, including the overlap energy of the topological bands, the spin-orbit coupling gap along the nodal ring, and the geometric properties of the nodal ring such as the average ring radius, ring ellipticity, and velocity anisotropy. In addition, our temperature-dependent measurements revealed a spectral weight transfer between intraband and interband transitions, indicating a possible violation of the optical sum rule within the measured energy range.
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Submitted 20 July, 2023; v1 submitted 27 March, 2023;
originally announced March 2023.
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Electronic structure of biased alternating-twist multilayer graphene
Authors:
Kyung** Shin,
Yunsu Jang,
Jiseon Shin,
Jeil Jung,
Hongki Min
Abstract:
We theoretically study the energy and optical absorption spectra of alternating twist multilayer graphene (ATMG) under a perpendicular electric field. We obtain analytically the low-energy effective Hamiltonian of ATMG up to pentalayer in the presence of the interlayer bias by means of first-order degenerate-state perturbation theory, and present general rules for constructing the effective Hamilt…
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We theoretically study the energy and optical absorption spectra of alternating twist multilayer graphene (ATMG) under a perpendicular electric field. We obtain analytically the low-energy effective Hamiltonian of ATMG up to pentalayer in the presence of the interlayer bias by means of first-order degenerate-state perturbation theory, and present general rules for constructing the effective Hamiltonian for an arbitrary number of layers. Our analytical results agree to an excellent degree of accuracy with the numerical calculations for twist angles $θ\gtrsim 2.2^{\circ}$ that are larger than the typical range of magic angles. We also calculate the optical conductivity of ATMG and determine its characteristic optical spectrum, which is tunable by the interlayer bias. When the interlayer potential difference is applied between consecutive layers of ATMG, the Dirac cones at the two moiré Brillouin zone corners $\bar{K}$ and $\bar{K}'$ acquire different Fermi velocities, generally smaller than that of monolayer graphene, and the cones split proportionally in energy resulting in a step-like feature in the optical conductivity.
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Submitted 4 July, 2023; v1 submitted 29 December, 2022;
originally announced December 2022.
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Theoretical upper bound of multiplexing in stochastic sensory receptors
Authors:
Asawari Pagare,
Sa Hoon Min,
Zhiyue Lu
Abstract:
Biological sensory receptors provide excellent examples of microscopic scale information transduction amidst stochastic noise. We argue that stochasticity is not always a hindrance to sensing. Instead, it could allow a single stochastic sensor to perform multiplexing: simultaneously transducing multiple types of environmental information to the downstream sensory network. Through a Langevin dynami…
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Biological sensory receptors provide excellent examples of microscopic scale information transduction amidst stochastic noise. We argue that stochasticity is not always a hindrance to sensing. Instead, it could allow a single stochastic sensor to perform multiplexing: simultaneously transducing multiple types of environmental information to the downstream sensory network. Through a Langevin dynamics simulation of a ligand-receptor sensor in a bath of ligands, we demonstrate that a binary-state receptor can simultaneously encode multiple independent environmental variables, such as ligand concentration and the speed of media flow. We develop a general theory of stochastic sensory multiplexing and suggest two theoretical upper bounds. Furthermore, we conjecture that randomly generated sensors typically saturate the tighter upper bound. The theoretical framework developed in this study, which involves a rank-deficient maximum likelihood analysis (rd-MLE), provides a systematic approach to comprehensively assess a sensor's sensory ability without any initial assumptions. This theoretical framework can inspire the design of more efficient artificial sensors.
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Submitted 3 April, 2023; v1 submitted 18 May, 2022;
originally announced May 2022.
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Nearly flat bands in twisted triple bilayer graphene
Authors:
Jiseon Shin,
Bheema Lingam Chittari,
Yunsu Jang,
Hongki Min,
Jeil Jung
Abstract:
We investigate the electronic structure of alternating-twist triple Bernal-stacked bilayer graphene (t3BG) as a function of interlayer coupling $ω$, twist angle $θ$, interlayer potential difference $Δ$, and top-bottom bilayers sliding vector $\boldsymbolτ$ for three possible configurations AB/AB/AB, AB/BA/AB, and AB/AB/BA. The parabolic low-energy band dispersions in a Bernal-stacked bilayer and g…
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We investigate the electronic structure of alternating-twist triple Bernal-stacked bilayer graphene (t3BG) as a function of interlayer coupling $ω$, twist angle $θ$, interlayer potential difference $Δ$, and top-bottom bilayers sliding vector $\boldsymbolτ$ for three possible configurations AB/AB/AB, AB/BA/AB, and AB/AB/BA. The parabolic low-energy band dispersions in a Bernal-stacked bilayer and gap-opening through a finite interlayer potential difference $Δ$ allows the flattening of bands in t3BG down to $\sim 20$~meV for twist angles $θ\lesssim 2^{\circ}$ regardless of the stacking types. The easier isolation of the flat bands and associated reduction of Coulomb screening thanks to the intrinsic gaps of bilayer graphene for finite $Δ$ facilitate the formation of correlation-driven gaps when it is compared to the metallic phases of twisted trilayer graphene under electric fields. We obtain the stacking dependent Coulomb energy versus bandwidth $U/W \gtrsim 1$ ratios in the $θ$ and $Δ$ parameter space. We also present the expected $K$-valley Chern numbers for the lowest-energy nearly flat bands.
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Submitted 19 June, 2022; v1 submitted 3 April, 2022;
originally announced April 2022.
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Tunable bulk photovoltaic effect in strained $γ$-GeSe
Authors:
Hong-Guk Min,
Churlhi Lyi,
Youngkuk Kim
Abstract:
Recently, Lee \textit{et. al.} [Nano Lett. \textbf{21}, 4305 (2021)] newly synthesized monochalcogenide GeSe in a polar phase, referred to as $γ$-phase. Motivated by this work, we study shift current of $γ$-GeSe and its tunability via an in-plane uniaxial strain. Using first-principles calculations, we uncover the electronic structure of the strained $γ$-GeSe systems. We then calculate frequency-d…
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Recently, Lee \textit{et. al.} [Nano Lett. \textbf{21}, 4305 (2021)] newly synthesized monochalcogenide GeSe in a polar phase, referred to as $γ$-phase. Motivated by this work, we study shift current of $γ$-GeSe and its tunability via an in-plane uniaxial strain. Using first-principles calculations, we uncover the electronic structure of the strained $γ$-GeSe systems. We then calculate frequency-dependent shift current conductivities at various strains. The tunability is demonstrated to enhance the shift current up to $\sim$ 20 $μ$A/V$^2$. Moreover, the direction of shift current can be inverted by a light strain. Markedly, an anomalous behavior is found in the zero-frequency limit, which can be an indicative of band inversion and a potential topological phase transition driven by the strain. Our results suggest that shift current can be a tangible prove of bulk electronic states of $γ$-GeSe.
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Submitted 15 November, 2022; v1 submitted 13 March, 2022;
originally announced March 2022.
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Semiclassical magnetotransport including the effects of the Berry curvature and Lorentz force
Authors:
Seungchan Woo,
Brett Min,
Hongki Min
Abstract:
In topological semimetals and insulators, negative longitudinal magnetoresistance and angle-dependent planar Hall effect have been reported arising from the Berry curvature. Using the Boltzmann transport theory, we present a closed-form expression for the nonequilibrium distribution function which includes both the effects of the Berry curvature and Lorentz force. Using this formulation, we obtain…
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In topological semimetals and insulators, negative longitudinal magnetoresistance and angle-dependent planar Hall effect have been reported arising from the Berry curvature. Using the Boltzmann transport theory, we present a closed-form expression for the nonequilibrium distribution function which includes both the effects of the Berry curvature and Lorentz force. Using this formulation, we obtain analytical expressions for conductivity and resistivity tensors in Weyl semimetals demonstrating a non-monotonic field dependence arising from the competition between the two effects.
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Submitted 30 May, 2022; v1 submitted 6 February, 2022;
originally announced February 2022.
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Diffusive density response of electrons in anisotropic multiband systems
Authors:
Jeonghyeon Suh,
Sunghoon Kim,
E. H. Hwang,
Hongki Min
Abstract:
We explicitly calculate the density-density response function with conserving vertex corrections for anisotropic multiband systems in the presence of impurities including long-range disorder. The direction-dependence of the vertex corrections is correctly considered to obtain the diffusion constant which is given by the combination of the componentwise transport relaxation times and velocities on…
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We explicitly calculate the density-density response function with conserving vertex corrections for anisotropic multiband systems in the presence of impurities including long-range disorder. The direction-dependence of the vertex corrections is correctly considered to obtain the diffusion constant which is given by the combination of the componentwise transport relaxation times and velocities on the Fermi surface. We also investigate the diffusive density response of various anisotropic systems, propose some empirical rules for the corresponding diffusion constant, and demonstrate that it is crucial to consider the component-dependence of the transport relaxation times to correctly interpret the transport properties of anisotropic systems, especially various topological materials with a different power-law dispersion in each direction.
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Submitted 25 September, 2022; v1 submitted 28 January, 2022;
originally announced January 2022.
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Semiclassical Boltzmann magnetotransport theory in anisotropic systems with a nonvanishing Berry curvature
Authors:
Jeonghyeon Suh,
Sanghyun Park,
Hongki Min
Abstract:
Understanding the transport behavior of an electronic system under the influence of a magnetic field remains a key subject in condensed matter physics. Particularly in topological materials, their nonvanishing Berry curvature can lead to many interesting phenomena in magnetotransport owing to the coupling between the magnetic field and Berry curvature. By fully incorporating both the field-driven…
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Understanding the transport behavior of an electronic system under the influence of a magnetic field remains a key subject in condensed matter physics. Particularly in topological materials, their nonvanishing Berry curvature can lead to many interesting phenomena in magnetotransport owing to the coupling between the magnetic field and Berry curvature. By fully incorporating both the field-driven anisotropy and inherent anisotropy in the band dispersion, we study the semiclassical Boltzmann magnetotransport theory in topological materials with a nonvanishing Berry curvature. We show that as a solution to the Boltzmann transport equation the effective mean-free-path vector is given by the integral equation, including the effective velocity arising from the coupling between the magnetic field, Berry curvature and mobility. We also calculate the conductivity of Weyl semimetals with an isotropic energy dispersion, and find that the coupling between the magnetic field and Berry curvature induces anisotropy in the relaxation time, showing a substantial deviation from the result obtained assuming a constant relaxation time.
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Submitted 22 March, 2023; v1 submitted 17 October, 2021;
originally announced October 2021.
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Topological multiband s-wave superconductivity in coupled multifold fermions
Authors:
Changhee Lee,
Chiho Yoon,
Taehyeok Kim,
Suk Bum Chung,
Hongki Min
Abstract:
We study three-dimensional time-reversal-invariant topological superconductivity in noncentrosymmetric materials such as RhSi, CoSi, and AlPt which host coupled multifold nodes energetically split by the spin-orbit coupling at the same time-reversal-invariant momentum (TRIM). The topological superconductivity arises from the $s_{+} \oplus s_{-}$ gap function, which is $\boldsymbol{k}$ independent,…
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We study three-dimensional time-reversal-invariant topological superconductivity in noncentrosymmetric materials such as RhSi, CoSi, and AlPt which host coupled multifold nodes energetically split by the spin-orbit coupling at the same time-reversal-invariant momentum (TRIM). The topological superconductivity arises from the $s_{+} \oplus s_{-}$ gap function, which is $\boldsymbol{k}$ independent, but with opposite signs for the two nodes split at the same TRIM. We consider various electron-electron interactions in the tight-binding model for RhSi and find that the topological superconducting phase supporting a surface Majorana cone and topological nodal rings is favored in a wide range of interaction parameters.
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Submitted 8 January, 2022; v1 submitted 23 March, 2021;
originally announced March 2021.
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Quasi-One-Dimensional Higher-Order Topological Insulators
Authors:
Chiho Yoon,
Cheng-Cheng Liu,
Hongki Min,
Fan Zhang
Abstract:
Quasi-1D materials Bi$_{4}$X$_{4}$ (X=Br,I) are prototype weak topological insulators (TI) in the $β$ phase. For the $α$ phases, recent high-throughput database screening suggests that Bi$_{4}$Br$_{4}$ is a rare higher-order TI (HOTI) whereas Bi$_{4}$I$_{4}$ has trivial symmetry indicators. Here we show that in fact the two $α$ phases are both pristine HOTIs yet with distinct termination-dependent…
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Quasi-1D materials Bi$_{4}$X$_{4}$ (X=Br,I) are prototype weak topological insulators (TI) in the $β$ phase. For the $α$ phases, recent high-throughput database screening suggests that Bi$_{4}$Br$_{4}$ is a rare higher-order TI (HOTI) whereas Bi$_{4}$I$_{4}$ has trivial symmetry indicators. Here we show that in fact the two $α$ phases are both pristine HOTIs yet with distinct termination-dependent hinge state patterns by performing first-principles calculations, analyzing coupled-edge dimerizations, inspecting surface lattice structures, constructing tight-binding models, and establishing boundary topological invariants. We reveal that the location of inversion center dictates Bi$_{4}$Br$_{4}$ (Bi$_{4}$I$_{4}$) to feature opposite (the same) dimerizations of a surface or intrinsic (bulk or extrinsic) origin at two side cleavage surfaces. We propose a variety of experiments to examine our predictions. Given the superior hinges along atomic chains, the structural transition at room temperature, and the extreme anisotropies in three axes, our results not only imply the possible existence of many topological materials beyond the scope of symmetry indicators but also establish a new TI paradigm and a unique material platform for exploring the interplay of geometry, symmetry, topology, and interaction.
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Submitted 29 May, 2020;
originally announced May 2020.
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Ubiquitous impact of localised impurity states on the exchange coupling mechanism in magnetic topological insulators
Authors:
Thiago R. F. Peixoto,
Hendrik Bentmann,
Philipp Rüßmann,
Abdul-Vakhab Tcakaev,
Martin Winnerlein,
Steffen Schreyeck,
Sonja Schatz,
Raphael Crespo Vidal,
Fabian Stier,
Volodymyr Zabolotnyy,
Robert J. Green,
Chul Hee Min,
Celso I. Fornari,
Henriette Maaß,
Hari Babu Vasili,
Pierluigi Gargiani,
Manuel Valvidares,
Alessandro Barla,
Jens Buck,
Moritz Hoesch,
Florian Diekmann,
Sebastian Rohlf,
Matthias Kalläne,
Kai Rossnagel,
Charles Gould
, et al. (5 additional authors not shown)
Abstract:
Since the discovery of the quantum anomalous Hall effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)$_2$Te$_3$ and V:(Bi,Sb)$_2$Te$_3$, the search for the exchange coupling mechanisms underlying the onset of ferromagnetism has been a central issue, and a variety of different scenarios have been put forward. By combining resonant photoemission, X-ray magnetic dichroism and mul…
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Since the discovery of the quantum anomalous Hall effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)$_2$Te$_3$ and V:(Bi,Sb)$_2$Te$_3$, the search for the exchange coupling mechanisms underlying the onset of ferromagnetism has been a central issue, and a variety of different scenarios have been put forward. By combining resonant photoemission, X-ray magnetic dichroism and multiplet ligand field theory, we determine the local electronic and magnetic configurations of V and Cr impurities in (Bi,Sb)$_2$Te$_3$. While strong pd hybridisation is found for both dopant types, their 3d densities of states show pronounced differences. State-of-the-art first-principles calculations show how these impurity states mediate characteristic short-range pd exchange interactions, whose strength sensitively varies with the position of the 3d states relative to the Fermi level. Measurements on films with varying host stoichiometry support this trend. Our results establish the essential role of impurity-state mediated exchange interactions in the magnetism of MTI.
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Submitted 15 January, 2020;
originally announced January 2020.
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Tunable quantum interference effect on magnetoconductivity in few-layer black phosphorus
Authors:
Sunghoon Kim,
Hongki Min
Abstract:
In this study, we develop a systematic weak localization/antilocalization theory fully considering the anisotropy and Berry phase of the system, and apply it to various phases of few-layer black phosphorus (BP), which has a highly anisotropic electronic structure with an electronic gap size tunable even to a negative value. The derivation of a Cooperon ansatz for the Bethe-Salpeter equation in a g…
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In this study, we develop a systematic weak localization/antilocalization theory fully considering the anisotropy and Berry phase of the system, and apply it to various phases of few-layer black phosphorus (BP), which has a highly anisotropic electronic structure with an electronic gap size tunable even to a negative value. The derivation of a Cooperon ansatz for the Bethe-Salpeter equation in a general anisotropic system is presented, revealing the existence of various quantum interference effects in different phases of few-layer BP, including a crossover from weak localization to antilocalization. We also predict that the magnetoconductivity at the semi-Dirac transition point will exhibit a nontrivial power-law dependence on the magnetic field, while following the conventional logarithmic field-dependence of 2D systems in the insulator and Dirac semimetal phases. Notably, the ratio between the magnetoconductivity and Boltzmann conductivity turns out to be independent of the direction, even in strongly anisotropic systems. Finally, we discuss the tunability of the quantum corrections of few-layer BP in terms of the symmetry class of the system.
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Submitted 31 May, 2020; v1 submitted 3 December, 2019;
originally announced December 2019.
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Ultrafast molecular orbital tomography of a pentacene thin film using time-resolved momentum microscopy at a free-electron laser
Authors:
K. Baumgärtner,
M. Reuner,
C. Metzger,
D. Kutnyakhov,
M. Heber,
C. H. Min,
T. R. F. Peixoto,
M. Reiser,
C. Kim,
W. Lu,
R. Shayduk,
W. M. Izquierdo,
G. Brenner,
F. Roth,
F. Pressacco,
A. Schöll,
S. Molodtsov,
W. Wurth,
F. Reinert,
A. Madsen,
D. Popova-Gorelova,
M. Scholz
Abstract:
We use time-resolved momentum microscopy at a free-electron laser (FEL) and extend orbital tomography into the time domain to image the electronic wave functions of excited molecular orbitals. This technique provides unprecedented insight into the ultrafast interplay between structural and electronic dynamics. In this work we prove general applicability and establish the experimental conditions at…
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We use time-resolved momentum microscopy at a free-electron laser (FEL) and extend orbital tomography into the time domain to image the electronic wave functions of excited molecular orbitals. This technique provides unprecedented insight into the ultrafast interplay between structural and electronic dynamics. In this work we prove general applicability and establish the experimental conditions at FEL sources to minimize space charge effects and radiation damage. We investigate a bilayer pentacene film on Ag(110) by optical laser pump and FEL probe experiments. From the momentum microscopy signal, we obtain time-dependent momentum maps of the excited-state dynamics of both pentacene layers separately. Combining experimental observations with a theoretical study, we interpret the observed signal for the bottom layer as resulting from the charge redistribution between the molecule and the substrate induced by excitation. We identify that the dynamics of the top pentacene layer resembles excited-state molecular dynamics.
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Submitted 3 December, 2021; v1 submitted 24 July, 2019;
originally announced July 2019.
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Surface states and Rashba-type spin polarization in antiferromagnetic MnBi$_2$Te$_4$
Authors:
R. C. Vidal,
H. Bentmann,
T. R. F. Peixoto,
A. Zeugner,
S. Moser,
C. H. Min,
S. Schatz,
K. Kissner,
M. Ünzelmann,
C. I. Fornari,
H. B. Vasili,
M. Valvidares,
K. Sakamoto,
D. Mondal,
J. Fujii,
I. Vobornik,
S. Jung,
C. Cacho,
T. K. Kim,
R. J. Koch,
C. Jozwiak,
A. Bostwick,
J. D. Denlinger,
E. Rotenberg,
J. Buck
, et al. (10 additional authors not shown)
Abstract:
The layered van der Waals antiferromagnet MnBi$_2$Te$_4$ has been predicted to combine the band ordering of archetypical topological insulators such as Bi$_2$Te$_3$ with the magnetism of Mn, making this material a viable candidate for the realization of various magnetic topological states. We have systematically investigated the surface electronic structure of MnBi$_2$Te$_4$(0001) single crystals…
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The layered van der Waals antiferromagnet MnBi$_2$Te$_4$ has been predicted to combine the band ordering of archetypical topological insulators such as Bi$_2$Te$_3$ with the magnetism of Mn, making this material a viable candidate for the realization of various magnetic topological states. We have systematically investigated the surface electronic structure of MnBi$_2$Te$_4$(0001) single crystals by use of spin- and angle-resolved photoelectron spectroscopy experiments. In line with theoretical predictions, the results reveal a surface state in the bulk band gap and they provide evidence for the influence of exchange interaction and spin-orbit coupling on the surface electronic structure.
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Submitted 12 September, 2019; v1 submitted 28 March, 2019;
originally announced March 2019.
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Vertex corrections to the dc conductivity in anisotropic multiband systems
Authors:
Sunghoon Kim,
Seungchan Woo,
Hongki Min
Abstract:
For an isotropic single-band system, it is well known that the semiclassical Boltzmann transport theory within the relaxation time approximation and the Kubo formula with the vertex corrections provide the same result with the $(1-\cosθ)$ factor in the inverse transport relaxation time. In anisotropic multiband systems, the semiclassical Boltzmann transport equation is generalized to coupled integ…
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For an isotropic single-band system, it is well known that the semiclassical Boltzmann transport theory within the relaxation time approximation and the Kubo formula with the vertex corrections provide the same result with the $(1-\cosθ)$ factor in the inverse transport relaxation time. In anisotropic multiband systems, the semiclassical Boltzmann transport equation is generalized to coupled integral equations relating transport relaxation times at different angles in different bands. Using the Kubo formula, we study the vertex corrections to the dc conductivity in anisotropic multiband systems and derive the relation satisfied by the transport relaxation time for both elastic and inelastic scatterings, verifying that the result is consistent with the semiclassical approach.
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Submitted 9 April, 2019; v1 submitted 14 January, 2019;
originally announced January 2019.
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Dual topological nodal line and nonsymmorphic Dirac semimetal in three dimensions
Authors:
Yun-Tak Oh,
Hong-Guk Min,
Youngkuk Kim
Abstract:
Previously known three-dimensional Dirac semimetals (DSs) occur in two types -- topological DSs and nonsymmorphic DSs. Here we present a novel three-dimensional DS that exhibits both features of the topological and nonsymmorphic DSs. We introduce a minimal tight-binding model for the space group 100 that describes a layered crystal made of two-dimensional planes in the $p4g$ wallpaper group. Using…
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Previously known three-dimensional Dirac semimetals (DSs) occur in two types -- topological DSs and nonsymmorphic DSs. Here we present a novel three-dimensional DS that exhibits both features of the topological and nonsymmorphic DSs. We introduce a minimal tight-binding model for the space group 100 that describes a layered crystal made of two-dimensional planes in the $p4g$ wallpaper group. Using this model, we demonstrate that double glide-mirrors allow a noncentrosymmetric three-dimensional DS that hosts both symmetry-enforced Dirac points at time-reversal invariant momenta and twofold-degenerate Weyl nodal lines on a glide-mirror-invariant plane in momentum space. The proposed DS allows for rich topological physics manifested in both topological surface states and topological phase diagrams, which we discuss in detail. We also perform first-principles calculations to predict that the proposed DS is realized in a set of existing materials BaLa$X$B$Y_5$, where $X$ = Cu or Au, and $Y$ = O, S, or Se.
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Submitted 20 June, 2019; v1 submitted 3 January, 2019;
originally announced January 2019.
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Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$
Authors:
Alexander Zeugner,
Frederik Nietschke,
Anja U. B. Wolter,
Sebastian Gaß,
Raphael C. Vidal,
Thiago R. F. Peixoto,
Darius Pohl,
Christine Damm,
Axel Lubk,
Richard Hentrich,
Simon K. Moser,
Celso Fornari,
Chul Hee Min,
Sonja Schatz,
Katharina Kißner,
Maximilian Ünzelmann,
Martin Kaiser,
Francesco Scaravaggi,
Bernd Rellinghaus,
Kornelius Nielsch,
Christian Heß,
Bernd Büchner,
Friedrich Reinert,
Hendrik Bentmann,
Oliver Oeckler
, et al. (3 additional authors not shown)
Abstract:
Crystal growth of MnBi$_{2}$Te$_{4}$ has delivered the first experimental corroboration of the 3D antiferromagnetic topological insulator state. Our present results confirm that the synthesis of MnBi$_{2}$Te$_{4}$ can be scaled-up and strengthen it as a promising experimental platform for studies of a crossover between magnetic ordering and non-trivial topology. High-quality single crystals of MnB…
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Crystal growth of MnBi$_{2}$Te$_{4}$ has delivered the first experimental corroboration of the 3D antiferromagnetic topological insulator state. Our present results confirm that the synthesis of MnBi$_{2}$Te$_{4}$ can be scaled-up and strengthen it as a promising experimental platform for studies of a crossover between magnetic ordering and non-trivial topology. High-quality single crystals of MnBi$_{2}$Te$_{4}$ are grown by slow cooling within a narrow range between the melting points of Bi$_{2}$Te$_{3}$ (586 °C) and MnBi$_{2}$Te$_{4}$ (600 °C). Single crystal X-ray diffraction and electron microscopy reveal ubiquitous antisite defects in both cation sites and, possibly, Mn vacancies. Powders of MnBi$_{2}$Te$_{4}$ can be obtained at subsolidus temperatures, and a complementary thermochemical study establishes a limited high-temperature range of phase stability. Nevertheless, quenched powders are stable at room temperature and exhibit long-range antiferromagnetic ordering below 24 K. The expected Mn(II) out-of-plane magnetic state is confirmed by the magnetization, X-ray photoemission, X-ray absorption and linear dichroism data. MnBi$_{2}$Te$_{4}$ exhibits a metallic type of resistivity in the range 4.5-300 K. The compound is an n-type conductor that reaches a thermoelectric figure of merit up to ZT = 0.17. Angle-resolved photoemission experiments provide evidence for a surface state forming a gapped Dirac cone.
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Submitted 7 December, 2018;
originally announced December 2018.
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Optical conductivity of black phosphorus with a tunable electronic structure
Authors:
Jiho Jang,
Seong** Ahn,
Hongki Min
Abstract:
Black phosphorus (BP) is a two-dimensional layered material composed of phosphorus atoms. Recently, it was demonstrated that external perturbations such as an electric field close the band gap in few-layer BP, and can even induce a band inversion, resulting in an insulator phase with a finite energy gap or a Dirac semimetal phase characterized by two separate Dirac nodes. At the transition between…
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Black phosphorus (BP) is a two-dimensional layered material composed of phosphorus atoms. Recently, it was demonstrated that external perturbations such as an electric field close the band gap in few-layer BP, and can even induce a band inversion, resulting in an insulator phase with a finite energy gap or a Dirac semimetal phase characterized by two separate Dirac nodes. At the transition between the two phases, a semi-Dirac state appears in which energy disperses linearly along one direction and quadratically along the other. In this work, we study the optical conductivity of few-layer BP using a lattice model and the corresponding continuum model, incorporating the effects of an external electric field and finite temperature. We find that the low-frequency optical conductivity scales a power law that differs depending on the phase, which can be utilized as an experimental signature of few-layer BP in different phases. We also systematically analyze the evolution of the material parameters as the electric field increases, and the consequence on the power-law behavior of the optical conductivity.
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Submitted 8 March, 2019; v1 submitted 19 November, 2018;
originally announced November 2018.
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Semiclassical Boltzmann transport theory of few-layer black phosphorus in various phases
Authors:
Sanghyun Park,
Seungchan Woo,
Hongki Min
Abstract:
Black phosphorus (BP), a two-dimensional (2D) van der Waals layered material composed of phosphorus atoms, has been one of the most actively studied 2D materials in recent years due to its tunable energy band gap (tunable even to a negative value) and its highly anisotropic electronic structure. Depending on the sign of the band gap tuning parameter, few-layer BP can be in a gapped insulator phase…
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Black phosphorus (BP), a two-dimensional (2D) van der Waals layered material composed of phosphorus atoms, has been one of the most actively studied 2D materials in recent years due to its tunable energy band gap (tunable even to a negative value) and its highly anisotropic electronic structure. Depending on the sign of the band gap tuning parameter, few-layer BP can be in a gapped insulator phase, gapless Dirac semimetal phase, or gapless semi-Dirac transition point between the two phases. Using the fully anisotropic multiband Boltzmann transport theory, we systematically study the dc conductivity of few-layer BP as a function of the carrier density and temperature by varying the band gap tuning parameter, and determine the characteristic density and temperature dependence corresponding to each phase.
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Submitted 2 April, 2019; v1 submitted 9 November, 2018;
originally announced November 2018.
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Emergent Anisotropic Non-Fermi Liquid at a Topological Phase Transition in Three Dimensions
Authors:
SangEun Han,
Changhee Lee,
Eun-Gook Moon,
Hongki Min
Abstract:
Understanding correlation effects in topological phases and their transitions is a cutting-edge area of research in recent condensed matter physics. We study topological quantum phase transitions (TQPTs) between double-Weyl semimetals (DWSMs) and insulators, and argue that a novel class of quantum criticality appears at the TQPT characterized by emergent anisotropic non-Fermi liquid behaviors, in…
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Understanding correlation effects in topological phases and their transitions is a cutting-edge area of research in recent condensed matter physics. We study topological quantum phase transitions (TQPTs) between double-Weyl semimetals (DWSMs) and insulators, and argue that a novel class of quantum criticality appears at the TQPT characterized by emergent anisotropic non-Fermi liquid behaviors, in which the interplay between the Coulomb interaction and electronic critical modes induces not only anisotropic renormalization of the Coulomb interaction but also strongly correlated electronic excitation in three spatial dimensions. Using the standard renormalization group methods, large $N_f$ theory and the $ε= 4-d$ method with fermion flavor number $N_f$ and spatial dimension $d$, we obtain the anomalous dimensions of electrons ($η_f=0.366/N_f $) in large $N_f$ theory and the associated anisotropic scaling relations of various physical observables. Our results may be observed in candidate materials for DWSMs such as HgCr$_2$Se$_4$ or SrSi$_2$ when the system undergoes a TQPT.
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Submitted 11 May, 2019; v1 submitted 27 September, 2018;
originally announced September 2018.
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Optically-Controlled Orbitronics on a Triangular Lattice
Authors:
Vo Tien Phong,
Zachariah Addison,
Seong** Ahn,
Hongki Min,
Ritesh Agarwal,
E. J. Mele
Abstract:
The propagation of electrons in an orbital multiplet dispersing on a lattice can support anomalous transport phenomena deriving from an orbitally-induced Berry curvature. In striking contrast to the related situation in graphene, we find that anomalous transport for an $L=1$ multiplet on the primitive 2D triangular lattice is activated by easily implemented on-site and optically-tunable potentials…
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The propagation of electrons in an orbital multiplet dispersing on a lattice can support anomalous transport phenomena deriving from an orbitally-induced Berry curvature. In striking contrast to the related situation in graphene, we find that anomalous transport for an $L=1$ multiplet on the primitive 2D triangular lattice is activated by easily implemented on-site and optically-tunable potentials. We demonstrate this for dynamics in a Bloch band where point degeneracies carrying opposite winding numbers are generically offset in energy, allowing both an anomalous charge Hall conductance with sign selected by off-resonance coupling to circularly-polarized light and a related anomalous orbital Hall conductance activated by layer buckling.
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Submitted 15 October, 2019; v1 submitted 25 September, 2018;
originally announced September 2018.
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Type-II Dirac line node in strained Na3N
Authors:
Dongwook Kim,
Seong** Ahn,
Jong Hyun Jung,
Hongki Min,
Jisoon Ihm,
Jung Hoon Han,
Youngkuk Kim
Abstract:
Dirac line node (DLN) semimetals are a class of topological semimetals that feature band-crossing lines in momentum space. We study the type-I and type-II classification of DLN semimetals by develo** a criterion that determines the type using band velocities. Using first-principles calculations, we also predict that Na3N under an epitaxial tensile strain realizes a type-II DLN semimetal with van…
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Dirac line node (DLN) semimetals are a class of topological semimetals that feature band-crossing lines in momentum space. We study the type-I and type-II classification of DLN semimetals by develo** a criterion that determines the type using band velocities. Using first-principles calculations, we also predict that Na3N under an epitaxial tensile strain realizes a type-II DLN semimetal with vanishing spin-orbit coupling (SOC), characterized by the Berry phase that is Z2-quantized in the presence of inversion and time-reversal symmetries. The surface energy spectrum is calculated to demonstrate the topological phase, and the type-II nature is demonstrated by calculating the band velocities. We also develop a tight-binding model and a low-energy effective Hamiltonian that describe the low-energy electronic structure of strained Na3N. The occurrence of a DLN in Na3N under strain is captured in the optical conductivity, which we propose as a means to experimentally confirm the type-II class of the DLN semimetal.
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Submitted 23 July, 2018;
originally announced July 2018.
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Diluted magnetic Dirac-Weyl materials: Susceptibility and ferromagnetism in three-dimensional chiral gapless semimetals
Authors:
Sanghyun Park,
Hongki Min,
E. H. Hwang,
S. Das Sarma
Abstract:
We theoretically investigate the temperature-dependent static susceptibility and long-range magnetic coupling of three-dimensional (3D) chiral gapless electron-hole systems (semimetals) with arbitrary band dispersion [i.e., $\varepsilon(k) \sim k^N$, where $k$ is the wave vector and $N$ is a positive integer]. We study the magnetic properties of these systems in the presence of dilute random magne…
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We theoretically investigate the temperature-dependent static susceptibility and long-range magnetic coupling of three-dimensional (3D) chiral gapless electron-hole systems (semimetals) with arbitrary band dispersion [i.e., $\varepsilon(k) \sim k^N$, where $k$ is the wave vector and $N$ is a positive integer]. We study the magnetic properties of these systems in the presence of dilute random magnetic impurities. Assuming carrier-mediated Ruderman-Kittel-Kasuya-Yosida indirect exchange interaction, we find that the magnetic ordering of intrinsic 3D chiral semimetals in the presence of dilute magnetic impurities is ferromagnetic for all values of $N$. Using finite-temperature self-consistent field approximation, we calculate the ferromagnetic transition temperature ($T_{\rm c}$). We find that $T_{\rm c}$ increases with increasing $N$ due to the enhanced density of states, and the calculated $T_{\rm c}$ is experimentally accessible assuming reasonable coupling between the magnetic impurities and itinerant carriers.
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Submitted 29 August, 2018; v1 submitted 28 April, 2018;
originally announced April 2018.
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Phase transitions of polariton condensate in 2D Dirac materials
Authors:
Ki Hoon Lee,
Changhee Lee,
Hongki Min,
Suk Bum Chung
Abstract:
For the quantum well in an optical microcavity, the interplay of the Coulomb interaction and the electron-photon (e-ph) coupling can lead to the hybridizations of the exciton and the cavity photon known as polaritons, which can form the Bose-Einstein condensate above a threshold density. Additional physics due to the nontrivial Berry phase comes into play when the quantum well consists of the gapp…
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For the quantum well in an optical microcavity, the interplay of the Coulomb interaction and the electron-photon (e-ph) coupling can lead to the hybridizations of the exciton and the cavity photon known as polaritons, which can form the Bose-Einstein condensate above a threshold density. Additional physics due to the nontrivial Berry phase comes into play when the quantum well consists of the gapped two-dimensional (2D) Dirac material such as the transition metal dichalcogenide (TMDC) MoS$_2$ or WSe$_2$. Specifically, in forming the polariton, the e-ph coupling from the optical selection rule due to the Berry phase can compete against the Coulomb electron-electron (e-e) interaction. We find that this competition gives rise to a rich phase diagram for the polariton condensate involving both topological and symmetry breaking phase transitions, with the former giving rise to the quantum anomalous Hall and the quantum spin Hall phases.
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Submitted 2 October, 2017;
originally announced October 2017.
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Electrodynamics on Fermi Cyclides in Nodal Line Semimetals
Authors:
Seong** Ahn,
E. J. Mele,
Hongki Min
Abstract:
We study the frequency-dependent conductivity of nodal line semimetals (NLSMs), focusing on the effects of carrier density and energy dispersion on the nodal line. We find that the low-frequency conductivity has a rich spectral structure which can be understood using scaling rules derived from the geometry of their Dupin cyclide Fermi surfaces. We identify different frequency regimes, find scaling…
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We study the frequency-dependent conductivity of nodal line semimetals (NLSMs), focusing on the effects of carrier density and energy dispersion on the nodal line. We find that the low-frequency conductivity has a rich spectral structure which can be understood using scaling rules derived from the geometry of their Dupin cyclide Fermi surfaces. We identify different frequency regimes, find scaling rules for the optical conductivity in each, and demonstrate them with numerical calculations of the inter- and intraband contributions to the optical conductivity using a low-energy model for a generic NLSM.
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Submitted 11 October, 2017; v1 submitted 28 February, 2017;
originally announced March 2017.
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Ferromagnetism in chiral multilayer 2D semimetals
Authors:
Hongki Min,
E. H. Hwang,
S. Das Sarma
Abstract:
We calculate the temperature dependent long-range magnetic coupling in the presence of dilute concentrations of random magnetic impurities in chiral multilayer two-dimensional semimetals, i.e., undoped intrinsic multilayer graphene. Assuming a carrier-mediated indirect RKKY exchange interaction among the well-separated magnetic impurities with the itinerant carriers mediating the magnetic interact…
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We calculate the temperature dependent long-range magnetic coupling in the presence of dilute concentrations of random magnetic impurities in chiral multilayer two-dimensional semimetals, i.e., undoped intrinsic multilayer graphene. Assuming a carrier-mediated indirect RKKY exchange interaction among the well-separated magnetic impurities with the itinerant carriers mediating the magnetic interaction between the impurities, we investigate the magnetic properties of intrinsic multilayer graphene using an effective chiral Hamiltonian model. We find that due to the enhanced density of states in the rhombohedral stacking sequence of graphene layers, the magnetic ordering of multilayer graphene is ferromagnetic in the continuum limit. The ferromagnetic transition temperature is calculated using a finite-temperature self-consistent field approximation and found to be within the experimentally accessible range for reasonable values of the impurity-carrier coupling.
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Submitted 6 February, 2017;
originally announced February 2017.
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Semiclassical Boltzmann transport theory for multi-Weyl semimetals
Authors:
Sanghyun Park,
Seungchan Woo,
E. J. Mele,
Hongki Min
Abstract:
Multi-Weyl semimetals (m-WSMs) are a new type of Weyl semimetal that have linear dispersion along one symmetry direction but anisotropic non-linear dispersion along the two transverse directions with a topological charge larger than one. Using the Boltzmann transport theory and fully incorporating the anisotropy of the system, we study the DC conductivity as a function of carrier density and tempe…
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Multi-Weyl semimetals (m-WSMs) are a new type of Weyl semimetal that have linear dispersion along one symmetry direction but anisotropic non-linear dispersion along the two transverse directions with a topological charge larger than one. Using the Boltzmann transport theory and fully incorporating the anisotropy of the system, we study the DC conductivity as a function of carrier density and temperature. We find that the characteristic density and temperature dependence of the transport coefficients at the level of Boltzmann theory are controlled by the topological charge of the multi-Weyl point and distinguish m-WSMs from their linear Weyl counterparts.
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Submitted 25 April, 2017; v1 submitted 25 January, 2017;
originally announced January 2017.
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Broken sublattice symmetry states in Bernal stacked multilayer graphene
Authors:
Chiho Yoon,
Yunsu Jang,
Jeil Jung,
Hongki Min
Abstract:
We analyze the ordered phases of Bernal stacked multilayer graphene in the presence of interaction induced band gaps due to sublattice symmetry breaking potentials, whose solutions can be analyzed in terms of light-mass and heavy-mass pseudospin doublets which have the same Chern numbers but opposite charge polarization directions. The application of a perpendicular external electric field reveals…
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We analyze the ordered phases of Bernal stacked multilayer graphene in the presence of interaction induced band gaps due to sublattice symmetry breaking potentials, whose solutions can be analyzed in terms of light-mass and heavy-mass pseudospin doublets which have the same Chern numbers but opposite charge polarization directions. The application of a perpendicular external electric field reveals an effective Hund's rule for the ordering of the sublattice pseudospin doublets in a tetralayer, while a similar but more complex phase diagram develops with increasing layer number.
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Submitted 16 April, 2017; v1 submitted 22 October, 2016;
originally announced October 2016.
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Large negative transconductance in multilayer graphene: The role of intersubband scattering
Authors:
Seungchan Woo,
E. H. Hwang,
Hongki Min
Abstract:
We calculate the transport properties of multilayer graphene, considering the effect of multisubband scattering in a high density regime, where higher subbands are occupied by charge carriers. To calculate the conductivity of multilayer graphene, we use the coupled multiband Boltzmann transport theory while fully incorporating the multiband scattering effects. We show that the allowed scattering c…
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We calculate the transport properties of multilayer graphene, considering the effect of multisubband scattering in a high density regime, where higher subbands are occupied by charge carriers. To calculate the conductivity of multilayer graphene, we use the coupled multiband Boltzmann transport theory while fully incorporating the multiband scattering effects. We show that the allowed scattering channels, screening effects, chiral nature of the electronic structure, and type of impurity scatterings determine the transport behavior of multilayer graphene. We find that the conductivity of multilayer graphene shows a sudden change when the carriers begin to occupy the higher subbands, and therefore a large negative transconductance (NTC) appears as the carrier density varies. These phenomena arise mostly from the intersubband scattering and the change in the density of states at the band touching density. Based on our results, it is possible to build novel devices utilizing the large NTC in multilayer graphene.
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Submitted 11 May, 2017; v1 submitted 22 October, 2016;
originally announced October 2016.
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Optical conductivity of multi-Weyl semimetals
Authors:
Seong** Ahn,
E. J. Mele,
Hongki Min
Abstract:
Multi-Weyl semimetals are new types of Weyl semimetals which have anisotropic non-linear energy dispersion and a topological charge larger than one, thus exhibiting a unique quantum response. Using a unified lattice model, we calculate the optical conductivity numerically in the multi-Weyl semimetal phase and in its neighboring gapped states, and obtain the characteristic frequency dependence of e…
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Multi-Weyl semimetals are new types of Weyl semimetals which have anisotropic non-linear energy dispersion and a topological charge larger than one, thus exhibiting a unique quantum response. Using a unified lattice model, we calculate the optical conductivity numerically in the multi-Weyl semimetal phase and in its neighboring gapped states, and obtain the characteristic frequency dependence of each phase analytically using a low-energy continuum model. The frequency dependence of longitudinal and transverse optical conductivities obeys scaling relations that are derived from the winding number of the parent multi-Weyl semimetal phase and can be used to distinguish these electronic states of matter.
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Submitted 27 April, 2017; v1 submitted 27 September, 2016;
originally announced September 2016.
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Zero-line modes at stacking faulted domain walls in multilayer graphene
Authors:
Changhee Lee,
Gunn Kim,
Jeil Jung,
Hongki Min
Abstract:
Rhombohedral multilayer graphene is a physical realization of the chiral two-dimensional electron gas that can host zero-line modes (ZLMs), also known as kink states, when the local ap opened by inversion symmetry breaking potential changes sign in real space. Here we study how the variations in the local stacking coordination of multilayer graphene affects the formation of the ZLMs. Our analysis…
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Rhombohedral multilayer graphene is a physical realization of the chiral two-dimensional electron gas that can host zero-line modes (ZLMs), also known as kink states, when the local ap opened by inversion symmetry breaking potential changes sign in real space. Here we study how the variations in the local stacking coordination of multilayer graphene affects the formation of the ZLMs. Our analysis indicates that the valley Hall effect develops whenever an interlayer potential difference is able to open up a band gap in stacking faulted multilayer graphene, and that ZLMs can appear at the domain walls separating two distinct regions with imperfect rhombohedral stacking configurations. Based on a tight-binding formulation with distant hop** terms between carbon atoms, we first show that topologically distinct domains characterized by the valley Chern number are separated by a metallic region connecting AA and AA$'$ stacking line in the layer translation vector space. We find that gapless states appear at the interface between the two stacking faulted domains with different layer translation or with opposite perpendicular electric field if their valley Chern numbers are different.
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Submitted 30 September, 2016; v1 submitted 6 July, 2016;
originally announced July 2016.
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Collective modes in multi-Weyl semimetals
Authors:
Seong** Ahn,
E. H. Hwang,
Hongki Min
Abstract:
We investigate collective modes in three dimensional (3D) gapless multi-Weyl semimetals with anisotropic energy band dispersions (i.e., $E\sim \sqrt{ k_{\parallel}^{2J} + k_z^2}$, where $k_{\parallel}$ and $k_z$ are wave vectors and $J$ is a positive integer). For comparison, we also consider the gapless semimetals with the isotropic band dispersions (i.e., $E\sim k^J$). We calculate analytically…
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We investigate collective modes in three dimensional (3D) gapless multi-Weyl semimetals with anisotropic energy band dispersions (i.e., $E\sim \sqrt{ k_{\parallel}^{2J} + k_z^2}$, where $k_{\parallel}$ and $k_z$ are wave vectors and $J$ is a positive integer). For comparison, we also consider the gapless semimetals with the isotropic band dispersions (i.e., $E\sim k^J$). We calculate analytically long-wavelength plasma frequencies incorporating interband transitions and chiral properties of carriers. For both the isotropic and anisotropic cases, we find that interband transitions and chirality lead to the depolarization shift of plasma frequencies. For the isotropic parabolic band dispersion (i.e., $N=2$, $E\sim k^2$), the long-wavelength plasma frequencies lie outside the single particle excitation regions for all carrier densities, and thus the plasmons do not decay via Landau dam**. For the higher-order band dispersions ($N \ge 3$) the long-wavelength plasmons experience dam** below a critical density. For systems with the anisotropic dispersion the density dependence of the long-wavelength plasma frequency along the direction of non-linear dispersion behaves like that of the isotropic linear band model ($N=1$), while along the direction of linear dispersion it behaves like that of the isotropic non-linear model ($N \ge 2$). Plasmons along both directions remain undamped over a broad range of densities due to the chirality induced depolarization shift. Our results provide a comprehensive picture of how band dispersion and chirality affect plasmon behaviors in 3D gapless chiral systems with the arbitrary band dispersion.
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Submitted 30 September, 2016; v1 submitted 11 April, 2016;
originally announced April 2016.
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Interplay of charge density wave and multiband superconductivity in 2$H$-Pd$_x$TaSe$_2$
Authors:
D. Bhoi,
S. Khim,
W. Nam,
B. S. Lee,
Chanhee Kim,
B. -G. Jeon,
B. H. Min,
S. Park,
Kee Hoon Kim
Abstract:
2$H$-TaSe$_2$ has been one of unique transition metal dichalcogenides exhibiting several phase transitions due to a delicate balance among competing electronic ground states. An unusual metallic state at high-$T$ is sequentially followed by an incommensurate charge density wave (ICDW) state at $\approx$ 122 K and a commensurate charge density wave (CCDW) state at $\approx$ 90 K, and superconductiv…
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2$H$-TaSe$_2$ has been one of unique transition metal dichalcogenides exhibiting several phase transitions due to a delicate balance among competing electronic ground states. An unusual metallic state at high-$T$ is sequentially followed by an incommensurate charge density wave (ICDW) state at $\approx$ 122 K and a commensurate charge density wave (CCDW) state at $\approx$ 90 K, and superconductivity at $T_{\rm{C}}\sim$0.14 K. Upon systematic intercalation of Pd ions into TaSe$_2$, we find that CCDW order is destabilized more rapidly than ICDW to indicate a hidden quantum phase transition point at $x$$\sim$0.09-0.10. Moreover, $T_{\rm{C}}$ shows a dramatic enhancement up to 3.3 K at $x$ = 0.08, $\sim$24 times of $T_{\rm{C}}$ in 2$H$-TaSe$_2$, in proportional to the density of states $N(E_F)$. Investigations of upper critical fields $H_{c2}$ in single crystals reveal evidences of multiband superconductivity as temperature-dependent anisotropy factor $γ_H$ = $H_{c2}^{ab}$/$H_{c2}^{c}$, quasi-linear increase of $H_{c2}^{c}(T)$, and an upward, positive-curvature in $H_{c2}^{ab}(T)$ near $T_{\rm{C}}$. Furthermore, analysis of temperature-dependent electronic specific heat corroborates the presence of multiple superconducting gaps. Based on above findings and electronic phase diagram vs $x$, we propose that the increase of $N(E_F)$ and effective electron-phonon coupling in the vicinity of CDW quantum phase transition should be a key to the large enhancement of $T_{\rm{C}}$ in Pd$_x$TaSe$_2$.
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Submitted 18 March, 2016;
originally announced March 2016.
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Shear-Exfoliated Phosphorene for Rechargeable Nanoscale Battery
Authors:
Feng Xu,
Binghui Ge,
**g Chen,
Lin Huo,
Hongyu Ma,
Chongyang Zhu,
Weiwei Xia,
Huihua Min,
Zhengrui Li,
Shengli Li,
Kaihao Yu,
Feng Wang,
Yimei Zhu,
Lijun Wu,
Yi** Cui,
Litao Sun
Abstract:
Discovery of atomically thin black phosphorus (called phosphorene) holds promise to be used as an alternative two-dimensional material to graphene and transition metal dichalcogenides especially as an anode material for lithium-ion batteries (LIBs). However, at present bulk black phosphorus (BP) still suffers from rapid capacity fading that results in poor rechargeable performance. Here, for the f…
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Discovery of atomically thin black phosphorus (called phosphorene) holds promise to be used as an alternative two-dimensional material to graphene and transition metal dichalcogenides especially as an anode material for lithium-ion batteries (LIBs). However, at present bulk black phosphorus (BP) still suffers from rapid capacity fading that results in poor rechargeable performance. Here, for the first time, we use in situ transmission electron microscopy (TEM) to construct nanoscale phosphorene LIBs and visualize the capacity fading mechanism in thick multilayer phosphorene by real time capturing delithiation-induced structural decomposition that reduces electrical conductivity and thus causes irreversibility of lithiated Li3P phase. We further demonstrate that few-layer phosphorene successfully circumvents the structural decomposition and holds superior structural restorability, even subjected to multi-cycle lithiation/delithiation processes and concomitant huge volume expansion. This finding affords new experimental insights into thickness-dependent lithium diffusion kinetics in phosphorene. Additionally, a scalable liquid-phase shear exfoliation route has been developed to produce high-quality ultrathin (monolayer or few-layer) phosphorene, only by a high-speed shear mixer or even a household kitchen blender with the shear rate threshold, which will pave the way for potential large-scale applications in LIBs once the rechargeable phosphorene nanoscale batteries can be transferred to industrialized enlargement in the future.
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Submitted 29 August, 2015;
originally announced August 2015.
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Stacking dependence of carrier-interactions in multilayer graphene systems
Authors:
Yunsu Jang,
E. H. Hwang,
A. H. MacDonald,
Hongki Min
Abstract:
We identify qualitative trends in the stacking sequence dependence of carrier-carrier interaction phenomena in multilayer graphene. Our theory is based on a new approach which explicitly exhibits the important role in interaction phenomena of the momentum-direction dependent intersite phases determined by the stacking sequence. Using this method, we calculate and compare the self-energies, density…
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We identify qualitative trends in the stacking sequence dependence of carrier-carrier interaction phenomena in multilayer graphene. Our theory is based on a new approach which explicitly exhibits the important role in interaction phenomena of the momentum-direction dependent intersite phases determined by the stacking sequence. Using this method, we calculate and compare the self-energies, density--density response functions, collective modes, and ground-state energies of several different few layer graphene systems. The influence of electron--electron interactions on important electronic properties can be understood in terms of competition between intraband exchange, interband exchange and correlation contributions that vary systematically with stacking arrangement.
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Submitted 28 September, 2016; v1 submitted 28 February, 2015;
originally announced March 2015.
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Electron-boson spectral density of LiFeAs obtained from optical data
Authors:
J. Hwang,
J. P. Carbotte,
B. H. Min,
Y. S. Kwon,
T. Timusk
Abstract:
We analyze existing optical data in the superconducting state of LiFeAs at $T =$ 4 K, to recover its electron-boson spectral density. A maximum entropy technique is employed to extract the spectral density $I^2χ(ω)$ from the optical scattering rate. Care is taken to properly account for elastic impurity scattering which can importantly affect the optics in an $s$-wave superconductor, but does not…
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We analyze existing optical data in the superconducting state of LiFeAs at $T =$ 4 K, to recover its electron-boson spectral density. A maximum entropy technique is employed to extract the spectral density $I^2χ(ω)$ from the optical scattering rate. Care is taken to properly account for elastic impurity scattering which can importantly affect the optics in an $s$-wave superconductor, but does not eliminate the boson structure. We find a robust peak in $I^2χ(ω)$ centered about $Ω_R \cong$ 8.0 meV or 5.3 $k_B T_c$ (with $T_c =$ 17.6 K). Its position in energy agrees well with a similar structure seen in scanning tunneling spectroscopy (STS). There is also a peak in the inelastic neutron scattering (INS) data at this same energy. This peak is found to persist in the normal state at $T =$ 23 K. There is evidence that the superconducting gap is anisotropic as was also found in low temperature angular resolved photoemission (ARPES) data.
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Submitted 18 December, 2014;
originally announced December 2014.
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Inelastic carrier lifetime in a coupled graphene electron-phonon system: Role of plasmon-phonon coupling
Authors:
Seong** Ahn,
E. H. Hwang,
Hongki Min
Abstract:
We calculate the inelastic scattering rates and the hot electron inelastic mean free paths for both monolayer and bilayer graphene on a polar substrate. We study the quasiparticle self-energy by taking into account both electron-electron and electron-surface optical (SO) phonon interactions. In this calculation the leading order dynamic screening approximation (G$_0$W approximation) is used to obt…
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We calculate the inelastic scattering rates and the hot electron inelastic mean free paths for both monolayer and bilayer graphene on a polar substrate. We study the quasiparticle self-energy by taking into account both electron-electron and electron-surface optical (SO) phonon interactions. In this calculation the leading order dynamic screening approximation (G$_0$W approximation) is used to obtain the quasiparticle self-energy by treating electrons and phonons on an equal footing. We find that the strong coupling between the SO phonon and plasmon leads to a new decay channel for the quasiparticle through the emission of the coupled mode, and gives rise to an abrupt increase in the scattering rate, which is absent in the uncoupled system. In monolayer graphene a single jump in the scattering rate occurs, arising from the emission of the low energy branch of the coupled plasmon-phonon modes. In bilayer graphene the emission of both low and high energy branches of the coupled modes contributes to the scattering rate and gives rise to two abrupt changes in the scattering rate. The jumps in the scattering rate can be potentially used in the hot electron device such as switching devices and oscillators.
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Submitted 30 December, 2014; v1 submitted 30 September, 2014;
originally announced September 2014.
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Anomalous Superconducting-Gap Structure of Slightly Overdoped Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$
Authors:
T. Hajiri,
T. Ito,
M. Matsunami,
B. H. Min,
Y. S. Kwon,
S. Kimura
Abstract:
We observed the anisotropic superconducting-gap (SC-gap) structure of a slightly overdoped superconductor, Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$ ($x=0.1$), using three-dimensional (3D) angle-resolved photoemission spectroscopy. Two hole Fermi surfaces (FSs) observed at the Brillouin zone center and an inner electron FS at the zone corner showed a nearly isotropic SC gap in 3D momentum space. Howeve…
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We observed the anisotropic superconducting-gap (SC-gap) structure of a slightly overdoped superconductor, Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$ ($x=0.1$), using three-dimensional (3D) angle-resolved photoemission spectroscopy. Two hole Fermi surfaces (FSs) observed at the Brillouin zone center and an inner electron FS at the zone corner showed a nearly isotropic SC gap in 3D momentum space. However, the outer electron FS showed an anisotropic SC gap with nodes or gap minima around the M and A points. The different anisotropies obtained the SC gap between the outer and inner electron FSs cannot be expected from all theoretical predictions with spin fluctuation, orbital fluctuation, and both competition. Our results provide a new insight into the SC mechanisms of iron pnictide superconductors.
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Submitted 19 August, 2014;
originally announced August 2014.
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Carrier screening, transport, and relaxation in 3D Dirac semimetals
Authors:
S. Das Sarma,
E. H. Hwang,
Hongki Min
Abstract:
A theory is developed for the density and temperature dependent carrier conductivity in doped three-dimensional (3D) Dirac materials focusing on resistive scattering from screened Coulomb disorder due to random charged impurities (e.g., dopant ions and unintentional background impurities). The theory applies both in the undoped intrinsic ("high-temperature", $T \gg T_F$) and the doped extrinsic ("…
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A theory is developed for the density and temperature dependent carrier conductivity in doped three-dimensional (3D) Dirac materials focusing on resistive scattering from screened Coulomb disorder due to random charged impurities (e.g., dopant ions and unintentional background impurities). The theory applies both in the undoped intrinsic ("high-temperature", $T \gg T_F$) and the doped extrinsic ("low-temperature", $T \ll T_F$) limit with analytical scaling properties for the carrier conductivity obtained in both regimes, where $T_F$ is the Fermi temperature corresponding to the doped free carrier density (electrons or holes). The scaling properties describing how the conductivity depends on the density and temperature can be used to establish the Dirac nature of 3D systems through transport measurements. We also consider the temperature dependent conductivity limited by the acoustic phonon scattering in 3D Dirac materials. In addition, we theoretically calculate and compare the single particle relaxation time $\tas$, defining the quantum level broadening, and the transport scattering time $\tat$, defining the conductivity, in the presence of screened charged impurity scattering. A critical quantitative analysis of the $\tat/\tas$ results for 3D Dirac materials in the presence of long-range screened Coulomb disorder is provided.
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Submitted 2 December, 2014; v1 submitted 3 August, 2014;
originally announced August 2014.
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Superconductivity-induced Phonon Renormalization on NaFe$_{1-x}$Co$_{x}$As
Authors:
Y. J. Um,
Yunkyu Bang,
B. H. Min,
Y. S. Kwon,
M. Le Tacon
Abstract:
We report a study of the lattice dynamics in superconducting NaFeAs (Tc = 8 K) and doped NaFe0.97Co0.03As (Tc = 20 K) using Raman light scattering. Five of the six phonon modes expected from group theory are observed. In contrast with results obtained on iso-structural and iso-electronic LiFeAs, anomalous broadening of Eg(As) and A1g(Na) modes upon cooling is observed in both samples. In addition,…
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We report a study of the lattice dynamics in superconducting NaFeAs (Tc = 8 K) and doped NaFe0.97Co0.03As (Tc = 20 K) using Raman light scattering. Five of the six phonon modes expected from group theory are observed. In contrast with results obtained on iso-structural and iso-electronic LiFeAs, anomalous broadening of Eg(As) and A1g(Na) modes upon cooling is observed in both samples. In addition, in the Co-doped sample, a superconductivity-induced renormalization of the frequency and linewidth of the B1g(Fe) vibration is observed. This renormalization can not be understood within a single band and simple multi-band approaches. A theoretical model that includes the effects of SDW correlations along with sign-changing s-wave pairing state and interband scattering has been developed to explain the observed behavior of the B1g(Fe) mode.
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Submitted 6 May, 2014;
originally announced May 2014.
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Polarization-Dependent Three-Dimensional Angle-Resolved Photoemission Spectroscopy of BaFe$_{1.8}$Co$_{0.2}$As$_{2}$
Authors:
Tetsuya Hajiri,
Takahiro Ito,
Masaharu Matsunami,
Byeong Hun Min,
Yong Seung Kwon,
Shin-ichi Kimura
Abstract:
We performed polarization- and photon-energy-dependent angle-resolved photoemission spectroscopy of a slightly overdoped iron pnictide superconductor, BaFe$_{1.8}$Co$_{0.2}$As$_{2}$, to clarify the three-dimensional electronic structure including its orbital characters at the Brillouin zone center. Two hole Fermi surfaces (FSs) with $d_{xz/yz}$ and $d_{xy/x^2-y^2}$ orbitals were observed but…
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We performed polarization- and photon-energy-dependent angle-resolved photoemission spectroscopy of a slightly overdoped iron pnictide superconductor, BaFe$_{1.8}$Co$_{0.2}$As$_{2}$, to clarify the three-dimensional electronic structure including its orbital characters at the Brillouin zone center. Two hole Fermi surfaces (FSs) with $d_{xz/yz}$ and $d_{xy/x^2-y^2}$ orbitals were observed but $d_{z^2}$ hole FS, which has nodes according to a theory of the spin-fluctuation superconductivity mechanism, did not appear. These results suggest that no node will appear at hole FSs at the zone center.
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Submitted 20 November, 2013;
originally announced November 2013.
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Optical properties of iron-based superconductor LiFeAs single crystal
Authors:
Byeong Hun Min,
Jong Beom Hong,
Jae Hyun Yoon,
Takuya Iizuka,
Shin-ichi Kimura,
Yunkyu Bang,
Yong Seung Kwon
Abstract:
We have measured the reflectivity spectra of the iron based superconductor LiFeAs (Tc = 17.6 K) in the temperature range from 4 to 300 K. In the superconducting state (T < Tc), the clear opening of the optical absorption gap was observed below 25 cm-1, indicating an isotropic full gap formation. In the normal state (T > Tc), the optical conductivity spectra display a typical metallic behavior with…
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We have measured the reflectivity spectra of the iron based superconductor LiFeAs (Tc = 17.6 K) in the temperature range from 4 to 300 K. In the superconducting state (T < Tc), the clear opening of the optical absorption gap was observed below 25 cm-1, indicating an isotropic full gap formation. In the normal state (T > Tc), the optical conductivity spectra display a typical metallic behavior with the Drude type spectra at low frequencies, but we found that the introduction of the two Drude components best fits the data, indicating the multiband nature of this superconductor. A theoretical analysis of the low temperature data (T=4K < Tc) also suggests that two superconducting gaps best fit the data and their values were estimated as Δ1 = 1.59 meV and Δ2 = 3.15 meV, respectively. Using the Ferrell-Glover-Tinkham (FGT) sum rule and dielectric function ε1(ω), the superconducting plasma frequency (ωps) is consistently estimated to be 6,665 cm-1, implying that about 59 % of the free carriers in the normal state condenses into the SC condensate. To investigate the various interband transition processes (for ω > 200 cm-1), we have also performed the local-density approximation (LDA) band calculation and calculated the optical spectra of the interband transitions. The theoretical results provided a qualitative agreement with the experimental data below 4000 cm-1
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Submitted 1 July, 2013; v1 submitted 4 January, 2013;
originally announced January 2013.
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Magnetic origin of high-energy kink structure in heavily electron-doped Li$_{1+x}$FeAs
Authors:
T. Hajiri,
T. Ito,
R. Niwa,
S. Hirate,
M. Matsunami,
B. H. Min,
Y. S. Kwon,
S. Kimura
Abstract:
We report the origin of a high-energy kink structure of heavily electron-doped nonsuperconducting Li$_{1+x}$FeAs observed by three-dimensional angle-resolved photoemission spectroscopy. The $d_{xy}$ orbital at the center of the Brillouin zone is strongly renormalized, indicating stronger electron correlation, exceeding that of stoichiometric LiFeAs despite the fact that the orbital characters of a…
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We report the origin of a high-energy kink structure of heavily electron-doped nonsuperconducting Li$_{1+x}$FeAs observed by three-dimensional angle-resolved photoemission spectroscopy. The $d_{xy}$ orbital at the center of the Brillouin zone is strongly renormalized, indicating stronger electron correlation, exceeding that of stoichiometric LiFeAs despite the fact that the orbital characters of all bands remain unchanged. Two types of kink structure on the $d_{yz}$ band were identified: an isotropic kink at the binding energy of 20 meV, and another kink located at 100 meV observed only in the (110) direction. The higher-energy kink is considered to originate from a magnetic interaction, because the peak energy is consistent with that of a spin excitation.
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Submitted 30 January, 2013; v1 submitted 28 December, 2012;
originally announced December 2012.
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Competing Ordered States in Bilayer Graphene
Authors:
Fan Zhang,
Hongki Min,
A. H. MacDonald
Abstract:
We use a perturbative renormalization group approach with short-range continuum model interactions to analyze the competition between isotropic gapped and anisotropic gapless ordered states in bilayer graphene, commenting specifically on the role of exchange and on the importance of spin and valley flavor degeneracy. By comparing the divergences of the corresponding susceptibilities, we conclude t…
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We use a perturbative renormalization group approach with short-range continuum model interactions to analyze the competition between isotropic gapped and anisotropic gapless ordered states in bilayer graphene, commenting specifically on the role of exchange and on the importance of spin and valley flavor degeneracy. By comparing the divergences of the corresponding susceptibilities, we conclude that this approach predicts gapped states for flavor numbers N=1,2,4. We also comment briefly on the related gapped states expected in chiral (ABC) trilayer graphene.
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Submitted 24 May, 2012;
originally announced May 2012.
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Similar zone-center gaps in the low-energy spin-wave spectra of NaFeAs and BaFe2As2
Authors:
J. T. Park,
G. Friemel,
T. Loew,
V. Hinkov,
Yuan Li,
B. H. Min,
D. L. Sun,
A. Ivanov,
A. Piovano,
C. T. Lin,
B. Keimer,
Y. S. Kwon,
D. S. Inosov
Abstract:
We report results of inelastic-neutron-scattering measurements of low-energy spin-wave excitations in two structurally distinct families of iron-pnictide parent compounds: Na(1-δ)FeAs and BaFe2As2. Despite their very different values of the ordered magnetic moment and Néel temperatures, T_N, in the antiferromagnetic state both compounds exhibit similar spin gaps of the order of 10 meV at the magne…
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We report results of inelastic-neutron-scattering measurements of low-energy spin-wave excitations in two structurally distinct families of iron-pnictide parent compounds: Na(1-δ)FeAs and BaFe2As2. Despite their very different values of the ordered magnetic moment and Néel temperatures, T_N, in the antiferromagnetic state both compounds exhibit similar spin gaps of the order of 10 meV at the magnetic Brillouin-zone center. The gap opens sharply below T_N, with no signatures of a precursor gap at temperatures between the orthorhombic and magnetic phase transitions in Na(1-δ)FeAs. We also find a relatively weak dispersion of the spin-wave gap in BaFe2As2 along the out-of-plane momentum component, q_z. At the magnetic zone boundary (q_z = 0), spin excitations in the ordered state persist down to 20 meV, which implies a much smaller value of the effective out-of-plane exchange interaction, J_c, as compared to previous estimates based on fitting the high-energy spin-wave dispersion to a Heisenberg-type model.
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Submitted 13 May, 2012; v1 submitted 4 April, 2012;
originally announced April 2012.
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Interplay between phonon and impurity scattering in 2D hole transport
Authors:
Hongki Min,
E. H. Hwang,
S. Das Sarma
Abstract:
We investigate temperature dependent transport properties of two-dimensional p-GaAs systems taking into account both hole-phonon and hole-impurity scattering effects. By analyzing the hole mobility data of p-GaAs in the temperature range 10 K$<T<$100 K, we estimate the value of the appropriate deformation potential for hole-phonon coupling. Due to the interplay between hole-phonon and hole-impurit…
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We investigate temperature dependent transport properties of two-dimensional p-GaAs systems taking into account both hole-phonon and hole-impurity scattering effects. By analyzing the hole mobility data of p-GaAs in the temperature range 10 K$<T<$100 K, we estimate the value of the appropriate deformation potential for hole-phonon coupling. Due to the interplay between hole-phonon and hole-impurity scattering the calculated temperature-dependent resistivity shows interesting nonmonotonic behavior. In particular, we find that there is a temperature range (typically 2 K$<T<$10 K) in which the calculated resistivity becomes independent of temperature due to a subtle cancellation between the temperature dependent resistive scattering contributions arising from impurities and phonons. This resistivity saturation regime appears at low carrier densities when the increasing resistivity due to phonon scattering compensates for the decreasing resistivity due to the nondegeneracy effect. This temperature-independent flat resistivity regime is experimentally accessible and may have already been observed in a recent experiment.
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Submitted 8 March, 2012;
originally announced March 2012.