Showing 1–50 of 113 results for author: Mikhailov, N N

The manifestation of Fermi level oscillations in the magnetoresistance of HgTe quantum wells with a split spectrum

Authors: G. M. Minkov, O. E. Rut, A. A. Sherstobitov, A. V. Germanenko, S. A. Dvoretski, N. N. Mikhailov

Abstract: Shubnikov-de Haas (SdH) oscillations and magneto-intersubband oscillations of magnetoresistance of structures with single HgTe quantum wells with a width of (10-18) nm have been experimentally studied. The spectrum of the conduction band in these structures is split by the spin-orbit interaction. This leads to beats of the SdH oscillations and the appearance of low-frequency magneto-intersubband o… ▽ More Shubnikov-de Haas (SdH) oscillations and magneto-intersubband oscillations of magnetoresistance of structures with single HgTe quantum wells with a width of (10-18) nm have been experimentally studied. The spectrum of the conduction band in these structures is split by the spin-orbit interaction. This leads to beats of the SdH oscillations and the appearance of low-frequency magneto-intersubband oscillations. The mutual position of the antinodes of the SdH oscillations and the maxima of the magneto-interband oscillations is unusual -- in low magnetic fields it is directly opposite to the predictions of the theory. Measurements in high magnetic fields, in which the relative amplitude of the SdH oscillations becomes greater than 0.2-0.3, show a change in the relative position of the antinodes of the SdH oscillations and the maxima of low-frequency oscillations. Numerical calculations and additional measurements at different temperatures show that the observed effects are due to oscillations of the Fermi level in the magnetic field. △ Less

Submitted 30 May, 2024; originally announced May 2024.

Comments: 7 two-column pages, 10 figures

Interaction-controlled transport in a two-dimensional massless-massive Dirac system: Transition from degenerate to nondegenerate regimes

Authors: A. D. Levin, G. M. Gusev, F. G. G. Hernandez, E. B. Olshanetsky, V. M. Kovalev, M. V. Entin, N. N. Mikhailov

Abstract: The resistivity of two-dimensional (2D) metals generally exhibits insensitivity to electron-electron scattering. However, it's worth noting that Galilean invariance may not hold true in systems characterized by a spectrum containing multiple electronic branches or in scenarios involving electron-hole plasma. In the context of our study, we focus on 2D electrons confined within a triple quantum wel… ▽ More The resistivity of two-dimensional (2D) metals generally exhibits insensitivity to electron-electron scattering. However, it's worth noting that Galilean invariance may not hold true in systems characterized by a spectrum containing multiple electronic branches or in scenarios involving electron-hole plasma. In the context of our study, we focus on 2D electrons confined within a triple quantum well (TQW) based on HgTe. This system displays a coexistence of energy bands featuring both linear and parabolic-like spectra at low energy and, therefore, lacks the Galilean invariance. This research employs a combined theoretical and experimental approach to investigate the transport properties of this two-component system across various regimes. By manipulating carrier density and temperature, we tune our system from a fully degenerate regime, where resistance follows a temperature-dependent behavior proportional to $T^2$, to a regime where both types of electrons adhere to Boltzmann statistics. In the non-degenerate regime, electron interactions lead to resistance that is weakly dependent on temperature. Notably, our experimental observations closely align with the theoretical predictions derived in this study. This work establishes the HgTe-based TQW as a promising platform for exploring different interaction dominant scenarios for the massless-massive Dirac system.9 pages, 8 figures △ Less

Submitted 3 May, 2024; originally announced May 2024.

Comments: 12 pages, 8 figures

Journal ref: Physical Review RESEARCH 6, 023121 (2024)

Roles of band gap and Kane electronic dispersion in the THz-frequency nonlinear optical response in HgCdTe

Authors: Davide Soranzio, Elsa Abreu, Sarah Houver, Janine Dössegger, Matteo Savoini, Frédéric Teppe, Sergey Krishtopenko, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Steven L. Johnson

Abstract: Materials with linear electronic dispersion often feature high carrier mobilities and unusually strong nonlinear optical interactions. In this work, we investigate the THz nonlinear dynamics of one such material, HgCdTe, with an electronic band dispersion heavily dependent on both temperature and stoichiometry. We show how the band gap, carrier concentration and band shape together determine the n… ▽ More Materials with linear electronic dispersion often feature high carrier mobilities and unusually strong nonlinear optical interactions. In this work, we investigate the THz nonlinear dynamics of one such material, HgCdTe, with an electronic band dispersion heavily dependent on both temperature and stoichiometry. We show how the band gap, carrier concentration and band shape together determine the nonlinear response of the system. At low temperatures, carrier generation from Zener tunneling dominates the nonlinear response with a reduction in the overall transmission. At room temperature, quasi-ballistic electronic dynamics drive the largest observed nonlinear optical interactions, leading to a transmission increase. Our results demonstrate the sensitivity of these nonlinear optical properties of narrow-gap materials to small changes in the electronic dispersion and carrier concentration. △ Less

Submitted 17 April, 2024; v1 submitted 16 April, 2024; originally announced April 2024.

Comments: 48 pages, 21 figures

Electron-hole scattering-induced temperature behaviour of HgTe-based semimetal quantum well

Authors: A. V. Snegirev, V. M. Kovalev, M. V. Entin, E. B. Olshanetsky, N. N. Mikhailov, Z. D. Kvon

Abstract: The semimetal quantum well (QW) based on HgTe structures exhibiting unusual transport properties at low temperature is examined experimentally. It demonstrates either a linear or quadratic growth of resistance with temperature at different top-gate voltages in the semimetal regime. We develop a theoretical model of HgTe-based semimetal QW resistance temperature dependence based on electron-hole sc… ▽ More The semimetal quantum well (QW) based on HgTe structures exhibiting unusual transport properties at low temperature is examined experimentally. It demonstrates either a linear or quadratic growth of resistance with temperature at different top-gate voltages in the semimetal regime. We develop a theoretical model of HgTe-based semimetal QW resistance temperature dependence based on electron-hole scattering processes at low temperatures. We apply the Boltzmann transport equation approach to study the effect of electron-hole scattering in a semimetal QW. The calculated temperature behavior of 2D semimetal resistivity demonstrates an excellent agreement with experimental findings. △ Less

Submitted 20 March, 2024; originally announced March 2024.

Optical Shubnikov - de Haas oscillations in 2D electron systems

Authors: M. L. Savchenko, J. Gospodaric, A. Shuvaev, I. A. Dmitriev, V. Dziom, A. A. Dobretsova, N. N. Mikhailov, Z. D. Kvon, A. Pimenov

Abstract: We report on dynamic Shubnikov - de Haas (SdH) oscillations that are measured in the optical response, sub - terahertz transmittance of two-dimensional systems, and reveal two distinct types of oscillation nodes: "universal" nodes at integer ratios of radiation and cyclotron frequencies and "tunable" nodes at positions sensitive to all parameters of the structure. The nodes in both real and imagin… ▽ More We report on dynamic Shubnikov - de Haas (SdH) oscillations that are measured in the optical response, sub - terahertz transmittance of two-dimensional systems, and reveal two distinct types of oscillation nodes: "universal" nodes at integer ratios of radiation and cyclotron frequencies and "tunable" nodes at positions sensitive to all parameters of the structure. The nodes in both real and imaginary parts of the measured complex transmittance are analyzed using a dynamic version of the static Lifshitz-Kosevich formula. These results demonstrate that the node structure of the dynamic SdH oscillations provides an all-optical access to quantization- and interaction-induced renormalization effects, in addition to parameters one can obtain from the static SdH oscillations. △ Less

Submitted 8 February, 2024; originally announced February 2024.

Comments: Main text plus supplemental information

Interaction dominated transport in 2D conductors: from degenerate to partially-degenerate regime

Authors: G. M. Gusev, A. D. Levin, E. B. Olshanetsky, Z. D. Kvon, V. M. Kovalev, M. V. Entin, N. N. Mikhailov

Abstract: In this study, we investigate the conductivity of a two-dimensional (2D) system in HgTe quantum well comprising two types of carriers with linear and quadratic spectra, respectively. The interactions between the two-dimensional Dirac holes and the heavy holes lead to the breakdown of Galilean invariance, resulting in interaction-limited resistivity. Our exploration of the transport properties span… ▽ More In this study, we investigate the conductivity of a two-dimensional (2D) system in HgTe quantum well comprising two types of carriers with linear and quadratic spectra, respectively. The interactions between the two-dimensional Dirac holes and the heavy holes lead to the breakdown of Galilean invariance, resulting in interaction-limited resistivity. Our exploration of the transport properties spans from low temperatures, where both subsystems are fully degenerate, to higher temperatures, where the Dirac holes remain degenerate while the heavy holes follow Boltzmann statistics, creating a partially degenerate regime. Through a developed theory, we successfully predict the behavior of resistivity as $ρ\sim T^2$ and $ρ\sim T^{3}$ for the fully degenerate and partially degenerate regimes, respectively, which is in reasonable agreement with experimental observations. Notably, at elevated temperatures, the interaction-limited resistivity surpasses the resistivity caused by impurity scattering by a factor of 5-6. These findings imply that the investigated system serves as a versatile experimental platform for exploring various interaction-limited transport regimes in two component plasma. △ Less

Submitted 2 January, 2024; originally announced January 2024.

Comments: 11 pages, 5 figures

Journal ref: Phys.Rev.B, v. 109, 035302 (2024)

Spin Splitting and Disorder in HgTe-Based Massless Dirac Fermion Landau Levels

Authors: D. A. Kozlov, J. Ziegler, N. N. Mikhailov, Z. D. Kvon, D. Weiss

Abstract: An experimental study of Landau levels (LLs) in a system of two-dimensional massless Dirac fermions based on a critical thickness HgTe quantum well has been carried out. The magnetotransport and the capacitive response have been investigated simultaneously. It is shown that the formation of Shubnikov-de Haas (SdH) oscillations associated with odd v filling factors occurs in a magnetic field whose… ▽ More An experimental study of Landau levels (LLs) in a system of two-dimensional massless Dirac fermions based on a critical thickness HgTe quantum well has been carried out. The magnetotransport and the capacitive response have been investigated simultaneously. It is shown that the formation of Shubnikov-de Haas (SdH) oscillations associated with odd v filling factors occurs in a magnetic field whose strength grows monotonically with v. This behavior is consistent with calculations of the electron spectrum, which predicts a decrease in cyclotron gaps with increasing v. Oscillations with even filling factors, corresponding to spin gaps, behave less trivially. First, the SdH oscillations with filling factors of 4 and higher are resolved in a magnetic field that is 2-2.5 times smaller than the field required to resolve neighboring SdH oscillations with odd filling factors of 3 and higher. This indicates a significant increase in the size of the spin gap caused by an interface inversion asymmetry (IIA) leading to Dirac cone splitting in a zero magnetic field. Using the spin splitting value gamma as a fitting parameter, we obtained the best agreement between experimental data and calculations at gamma=1.5 meV. Next, spin splitting for the zeroth and first LLs is observed in 2-3 times stronger magnetic fields than for the other levels, indicating an increase in disorder near the Dirac point, due to the lack of screening. △ Less

Submitted 16 October, 2023; originally announced October 2023.

Comments: 4 figures

Energy spectrum of valence band in HgTe quantum wells on the way from a two to the three dimensional topological insulator

Authors: G. M. Minkov, O. E. Rut, A. A. Sherstobitov, S. A. Dvoretski, N. N. Mikhailov, V. Ya. Aleshkin

Abstract: The magnetic field, temperature dependence and the Hall effect have been measured in order to determine the energy spectrum of the valence band in HgTe quantum wells with the width (20-200)nm. The comparison of hole densities determined from the period Shubnikov-de Haas oscillations and the Hall effect shows that states at the top of valence band are double degenerate in teh entry quantum wells wi… ▽ More The magnetic field, temperature dependence and the Hall effect have been measured in order to determine the energy spectrum of the valence band in HgTe quantum wells with the width (20-200)nm. The comparison of hole densities determined from the period Shubnikov-de Haas oscillations and the Hall effect shows that states at the top of valence band are double degenerate in teh entry quantum wells width the width range. The cyclotron mass determined from temperature dependence of SdH oscillations increases monotonically from (0.2-0.3) mass of the free electron, with increasing hole density from 2e11 to 6e11 cm^-2. The determined dependence has been compared to theoretical one calculate within the four band kp model. The experimental dependence was found to be strongly inconsistent with this predictions. It has been shown that the inclusion of additional factors (electric field, strain) does not remove the contradiction between experiment and theory. Consequently it is doubtful that the mentioned kp calculations adequately describe the valence band for any width of quantum well. △ Less

Submitted 3 August, 2023; originally announced August 2023.

Comments: 7 pages 8 figures

Journal ref: JETP Letters volume 117, page 916 (2023)

Gate tunable terahertz cyclotron emission from two-dimensional Dirac fermions

Authors: B. Benhamou-Bui, C. Consejo, S. S. Krishtopenko, M. Szoła, K. Maussang, S. Ruffenach, E. Chauveau, S. Benlemqwanssa, C. Bray, X. Baudry, P. Ballet, S. V. Morozov, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, B. Jouault, J. Torres, F. Teppe

Abstract: Two-dimensional Dirac fermions in HgTe quantum wells close to the topological phase transition can generate significant cyclotron emission that is magnetic field tunable in the Terahertz (THz) frequency range. Due to their relativistic-like dynamics, their cyclotron mass is strongly dependent on their electron concentration in the quantum well, providing a second tunability lever and paving the wa… ▽ More Two-dimensional Dirac fermions in HgTe quantum wells close to the topological phase transition can generate significant cyclotron emission that is magnetic field tunable in the Terahertz (THz) frequency range. Due to their relativistic-like dynamics, their cyclotron mass is strongly dependent on their electron concentration in the quantum well, providing a second tunability lever and paving the way for a gate-tunable, permanent-magnet Landau laser. In this work, we demonstrate the proof-of-concept of such a back-gate tunable THz cyclotron emitter at fixed magnetic field. The emission frequency detected at 1.5 Tesla is centered on 2.2 THz and can already be electrically tuned over 250 GHz. With an optimized gate and a realistic permanent magnet of 1.0 Tesla, we estimate that the cyclotron emission could be continuously and rapidly tunable by the gate bias between 1 and 3 THz, that is to say on the less covered part of the THz gap. △ Less

Submitted 21 July, 2023; originally announced July 2023.

Comments: 6 pages, 4 figures

Journal ref: APL Photonics 8, 116106 (2023)

Transport properties of a 1000-nm HgTe film: the interplay of surface and bulk carriers

Authors: M. L. Savchenko, D. A. Kozlov, N. N. Mikhailov, S. A. Dvoretsky, Z. D. Kvon

Abstract: We report on systematic study of transport properties of a 1000-nm HgTe film. Unlike to thinner and strained HgTe films, which are known as high-quality three-dimensional (3D) topological insulators, the film under study is much thicker than the limit of pseudomorphic growth of HgTe on a CdTe substrate. Therefore, it is expected to be fully relaxed and has the band structure of bulk HgTe, i.e., a… ▽ More We report on systematic study of transport properties of a 1000-nm HgTe film. Unlike to thinner and strained HgTe films, which are known as high-quality three-dimensional (3D) topological insulators, the film under study is much thicker than the limit of pseudomorphic growth of HgTe on a CdTe substrate. Therefore, it is expected to be fully relaxed and has the band structure of bulk HgTe, i.e., a zero gap semiconductor. Nevertheless, since the bands inversion the two-dimensional (2D) topological surface states are still expected to exist. To check this claim we studied classical and quantum transport response of the system. We demonstrate that by tuning the top-gate voltage one can change the electron-dominating transport to the hole one. The highest electron mobility is found to be more than $300 \times 10^3$ cm$^2$/Vs. The system exhibits Shubnikov-de Haas (SdH) oscillations with a complicated pattern and shows up to 5 independent frequencies in corresponding Fourier spectra. They are attributed to the topological surface states, Volkov-Pankratov states and spin-degenerate bulk states in the accumulation layer near the gate. The observed peculiarities of the quantum transport are the strong SdH oscillations of the Hall resistance, and the suppressed oscillatory response of the topological surface states. △ Less

Submitted 8 February, 2023; originally announced February 2023.

Terahertz cyclotron emission from two-dimensional Dirac fermions

Authors: S. Gebert, C. Consejo, S. S. Krishtopenko, S. Ruffenach, M. Szola, J. Torres, C. Bray, B. Jouault, M. Orlita, X. Baudry, P. Ballet, S. V. Morozov, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, F. Teppe

Abstract: Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidistance of the Landau levels from Dirac fermions would suppress the harmful non-radiative Auger recombination. Unfortunately, even with this non-equidistance an unfavorable non-radiative process persists in Landau-quantized… ▽ More Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidistance of the Landau levels from Dirac fermions would suppress the harmful non-radiative Auger recombination. Unfortunately, even with this non-equidistance an unfavorable non-radiative process persists in Landau-quantized graphene, and so far no cyclotron emission from Dirac fermions has been reported. One way to eliminate this last non-radiative process is to sufficiently modify the dispersion of the Landau levels by opening a small gap in the linear band structure. A proven example of such gapped graphene-like materials are HgTe quantum wells close to the topological phase transition. In this work, we experimentally demonstrate Landau emission from Dirac fermions in such HgTe quantum wells, where the emission is tunable by both the magnetic field and the carrier concentration. Consequently, these results represent an advance in the realization of terahertz Landau lasers tunable by magnetic field and gate-voltage. △ Less

Submitted 14 January, 2023; originally announced January 2023.

Comments: Main text with the figures of the published version

Journal ref: Nature Photonics (2023)

Quantum oscillations of transport coefficients and capacitance: an unexpected manifestation of the spin-Hall effect

Authors: G. M. Minkov, O. E. Rut, A. A. Sherstobitov, S. A. Dvoretski, N. N. Mikhailov, A. V. Germanenko

Abstract: The results of systematic experimental studies of quantum oscillations of resistivity, Hall coefficient and capacitance in GaAs and In$_x$Ga$_{1-x}$As quantum wells (QWs) with a simple electron spectrum and HgTe QWs with a complicated non-parabolic spectrum and strong spin-orbit interaction are reported. A striking result is the ratio of the amplitudes of the resistance and Hall coefficient oscill… ▽ More The results of systematic experimental studies of quantum oscillations of resistivity, Hall coefficient and capacitance in GaAs and In$_x$Ga$_{1-x}$As quantum wells (QWs) with a simple electron spectrum and HgTe QWs with a complicated non-parabolic spectrum and strong spin-orbit interaction are reported. A striking result is the ratio of the amplitudes of the resistance and Hall coefficient oscillations. In GaAs QW with a simple spectrum characterized by negligibly small Zeeman and spin-orbit splitting, the ratio of amplitudes is close to that predicted theoretically. In HgTe QWs, this ratio is very different and behaves differently in QWs with normal and inverted electron spectra. In HgTe WQs with a normal spectrum, it tends to a theoretical value with an increase of the filling factor ($N$), while for HgTe QWs with an inverted spectrum, it differs significantly from the theoretical one for all available $N$. It is assumed that such a difference in the ratio of amplitudes in GaAs and HgTe QWs is due not to the peculiarities of the energy spectrum of HgTe, but to the peculiarities of electron scattering due to spin-orbit interaction with the potential of the scatterers. This assumption is justified by analysis of experimental results obtained for a heterostructure with a In$_{0.2}$Ga$_{0.8}$As QW, which spectrum is very close to the GaAs QW spectrum, but characterizes by much stronger spin-orbit splitting value. It has been found that the positions of the resistance and capacitance oscillations, the difference between the phases of the resistance and Hall coefficient oscillations and its $N$ dependence are close to those observed in GaAs QW. At the same time the ratio of the amplitude of the resistance oscillations to the Hall coefficient oscillations and its $N$ dependence differs very strongly and they are close to that observed in HgTe quantum wells. △ Less

Submitted 29 December, 2022; originally announced December 2022.

Comments: 11 pages, 14 figures

Journal ref: Phys. Rev. B 108, 075301 (2023)

Supercurrent interference in HgTe Josephson junctions

Authors: Wolfgang Himmler, Ralf Fischer, Michael Barth, Jacob Fuchs, Dmitry A. Kozlov, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Christoph Strunk, Cosimo Gorini, Klaus Richter, Dieter Weiss

Abstract: Wires made of topological insulators (TI) are a promising platform for searching for Majorana bound states. These states can be probed by analyzing the fractional ac Josephson effect in Josephson junctions with the TI wire as a weak link. An axial magnetic field can be used to tune the system from trivial to topologically nontrivial. Here we investigate the oscillations of the supercurrent in such… ▽ More Wires made of topological insulators (TI) are a promising platform for searching for Majorana bound states. These states can be probed by analyzing the fractional ac Josephson effect in Josephson junctions with the TI wire as a weak link. An axial magnetic field can be used to tune the system from trivial to topologically nontrivial. Here we investigate the oscillations of the supercurrent in such wire Josephson junctions as a function of the axial magnetic field strength and different contact transparencies. Although the current flows on average parallel to the magnetic field we observe $h/2e$, $h/4e$- and even $h/8e$-periodic oscillations of the supercurrent in samples with lower contact transparencies. Corresponding tight-binding transport simulations using a Bogoliubov-de Gennes model Hamiltonian yield the supercurrent through the Josephson junctions, showing in particular the peculiar $h/4e$-periodic oscillations observed in experiments. A further semiclassical analysis based on Andreev-reflected trajectories connecting the two superconductors allows us to identify the physical origin of these oscillations. They can be related to flux-enclosing paths winding around the TI-nanowire, thereby highlighting the three-dimensional character of the junction geometry compared to common planar junctions. △ Less

Submitted 12 November, 2022; originally announced November 2022.

Quantum transport of Dirac fermions in HgTe gapless quantum wells

Authors: G. M. Gusev, A. D. Levin, D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov

Abstract: We study transport properties of HgTe quantum wells with critical well thickness, where the band gap is closed, and the low energy spectrum is described by a single Dirac cone. In this work, we examined both macroscopic and micron-sized (mesocopic) samples. In micron-sized samples, we observe a magnetic field induced, quantized resistance ($\sim h/2e^{2}$) at Landau filling factor $ν=0$, correspon… ▽ More We study transport properties of HgTe quantum wells with critical well thickness, where the band gap is closed, and the low energy spectrum is described by a single Dirac cone. In this work, we examined both macroscopic and micron-sized (mesocopic) samples. In micron-sized samples, we observe a magnetic field induced, quantized resistance ($\sim h/2e^{2}$) at Landau filling factor $ν=0$, corresponding to the formation of helical edge states centered at the charge neutrality point (CNP). In macroscopic samples, the resistance near zero Landau level (LL) reveals strong oscillations, which we attribute to scattering between the edge $ν=0$ state and bulk $ν\neq 0$ hole LL. We provide a model taking an empirical approach to construct a LL diagram based on a reservoir scenario, formed by the heavy holes. △ Less

Submitted 14 June, 2022; originally announced June 2022.

Comments: 6 pages, 5 figures

Journal ref: Nanomaterials, 12(12), 2047 (2022)

Scattering anisotropy in HgTe (013) quantum well

Authors: D. A. Khudaiberdiev, M. L. Savchenko, D. A. Kozlov, N. N. Mikhailov, Z. D. Kvon

Abstract: We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well of 22 nm width in the directions $[100]$ and $[03\bar{1}]$ as the function of the electron density $n$. The anisotropy is absent at minimal electron density near the charge neutrality point. The anisotropy increases with the increase of n and reaches about 10% when the Fermi level is within t… ▽ More We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well of 22 nm width in the directions $[100]$ and $[03\bar{1}]$ as the function of the electron density $n$. The anisotropy is absent at minimal electron density near the charge neutrality point. The anisotropy increases with the increase of n and reaches about 10% when the Fermi level is within the first subband H1. There is a sharp increase of the anisotropy (up to 60%) when the Fermi level reaches the second subband E2. We conclude that the first effect is due to the small intra-subband anisotropic interface roughness scattering, and the second one is due to the strongly anisotropic inter-subband roughness scattering, but the microscopical reason of such a strong change in the anisotropy remains unknown. △ Less

Submitted 24 August, 2022; v1 submitted 1 June, 2022; originally announced June 2022.

Comments: 4 pages, 5 figures, published in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 121, 083101 (2022);

THz ratchet effect in HgTe interdigitated structures

Authors: I. Yahniuk, G. V. Budkin, A. Kazakov, M. Otteneder, J. Ziegler, D. Weiss, N. N. Mikhailov, S. A. Dvoretskii, T. Wojciechowski, V. V. Bel'kov, W. Knap, S. D. Ganichev

Abstract: The emergence of ratchet effects in two-dimensional materials is strongly correlated with the introduction of asymmetry into the system. In general, dual-grating-gate structures forming lateral asymmetric superlattices provide a suitable platform for studying this phenomenon. Here, we report on the observation of ratchet effects in HgTe-based dual-grating-gate structures hosting different band str… ▽ More The emergence of ratchet effects in two-dimensional materials is strongly correlated with the introduction of asymmetry into the system. In general, dual-grating-gate structures forming lateral asymmetric superlattices provide a suitable platform for studying this phenomenon. Here, we report on the observation of ratchet effects in HgTe-based dual-grating-gate structures hosting different band structure properties. Applying polarized terahertz laser radiation we detected linear and polarization independent ratchets, as well as an radiation-helicity driven circular ratchet effect. Studying the ratchet effect in devices made of quantum wells (QWs) of different thickness we observed that the magnitude of the signal substantially increases with decreasing QW width with a maximum value for devices made of QWs of critical thickness hosting Dirac fermions. Furthermore, swee** the gate voltage amplitude we observed sign-alternating oscillations for gate voltages corresponding to p-type conductivity. The amplitude of the oscillations is more than two orders of magnitude larger than the signal for n-type conducting QWs. The oscillations and the signal enhancement are shown to be caused by the complex valence band structure of HgTe-based QWs. These peculiar features of the ratchet currents make these materials an ideal platform for the development of THz applications. △ Less

Submitted 28 February, 2022; originally announced February 2022.

Comments: 9 pages, 6 figures

Transformation of an energy spectrum and wave functions in the crossover from two- to three-dimensional topological insulator in HgTe quantum wells: long and thorny way

Authors: G. M. Minkov, V. Ya. Aleshkin, O. E. Rut, A. A. Sherstobitov, S. A. Dvoretski, N. N. Mikhailov, A. V. Germanenko

Abstract: A magnetotransport and quantum capacitance of the two-dimensional electron gas in HgTe/Cd$_x$Hg$_{1-x}$Te quantum wells of a width ($20.2-46.0$)~nm are experimentally investigated. It is shown that the first energy subband of spatial quantization is split due to the spin-orbit interaction and the split branches are single-spin, therewith the splitting strength increases with the increase of the qu… ▽ More A magnetotransport and quantum capacitance of the two-dimensional electron gas in HgTe/Cd$_x$Hg$_{1-x}$Te quantum wells of a width ($20.2-46.0$)~nm are experimentally investigated. It is shown that the first energy subband of spatial quantization is split due to the spin-orbit interaction and the split branches are single-spin, therewith the splitting strength increases with the increase of the quantum well width. The electron effective masses in the branches are close to each other within the actual density range. Magneto-intersubband oscillations (MISO) observed in the structures under study exhibit the growing amplitude with the increasing electron density that contradicts to the expected decrease of wave function overlap for the rectangular quantum well. To interpret the data obtained, we have used a self-consistent approach to calculate the electron energy spectrum and the wave function within framework of the \emph{kP}-model. It has been in particular shown that the MISO amplitude increase results from the increasing overlap of the wave functions due to their shift from the gate electrode with the gate voltage increase known as phenomenon of the negative electron polarizability. The results obtained from the transport experiments are supported by quantum capacitance measurements. △ Less

Submitted 13 December, 2021; originally announced December 2021.

Comments: 12 pages, 15 figures

Journal ref: Phys. Rev. B 106, 085301 (2022)

Thermoelectric transport in a three-dimensional HgTe topological insulator

Authors: G. M. Gusev, Z. D. Kvon, A. D. Levin, N. N. Mikhailov

Abstract: The thermoelectric response of 80-nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the… ▽ More The thermoelectric response of 80-nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the 2D Dirac electrons coexist with bulk hole states, the Seebeck coefficient is modified due to 2D electron - 3D hole scattering. △ Less

Submitted 11 December, 2021; originally announced December 2021.

Comments: 6 pages, 3 figures

Journal ref: Nanomaterials 11, 3364, 2021

Engineering topological phases in triple HgTe/CdTe quantum wells

Authors: G. J. Ferreira, D. R. Candido, F. G. G. Hernandez, G. M. Gusev, E. B. Olshanetsky, N. N. Mikhailov, S. A. Dvoretsky

Abstract: Quantum wells formed by layers of HgTe between Hg$_{1-x}$Cd$_x$Te barriers lead to two-dimensional (2D) topological insulators, as predicted by the BHZ model. Here, we theoretically and experimentally investigate the characteristics of triple HgTe quantum wells. We describe such heterostructure with a three dimensional $8\times 8$ Kane model, and use its eigenstates to derive an effective 2D Hamil… ▽ More Quantum wells formed by layers of HgTe between Hg$_{1-x}$Cd$_x$Te barriers lead to two-dimensional (2D) topological insulators, as predicted by the BHZ model. Here, we theoretically and experimentally investigate the characteristics of triple HgTe quantum wells. We describe such heterostructure with a three dimensional $8\times 8$ Kane model, and use its eigenstates to derive an effective 2D Hamiltonian for the system. From these we obtain a phase diagram as a function of the well and barrier widths and we identify the different topological phases composed by zero, one, two, and three sets of edge states hybridized along the quantum wells. The phase transitions are characterized by a change of the spin Chern numbers and their corresponding band inversions. Complementary, transport measurements are experimentally investigated on a sample close to the transition line between the phases with one and two sets of edges states. Accordingly, for this sample we predict a gapless spectrum with low energy bulk conduction bands given by one parabolic and one Dirac band, and with edge states immersed in the bulk valance bands. Consequently, we show that under these conditions, local and non-local transport measurements are inconclusive to characterize a sole edge state conductivity due to bulk conductivity. On the other hand, Shubnikov-de Haas (SdH) oscillations show an excellent agreement with our theory. Particularly, we show that the measured SdH oscillation frequencies agrees with our model and show clear signatures of the coexistence of a parabolic and Dirac bands. △ Less

Submitted 2 December, 2021; originally announced December 2021.

Comments: 15 pages, 5 figures

Journal ref: Scientific reports 12 (1), 2617 (2022)

Transport through the network of topological channels in HgTe based quantum well

Authors: G. M. Gusev, Z. D. Kvon, D. A. Kozlov, E. B. Olshanetsky, M. V. Entin, N. N. Mikhailov

Abstract: Topological insulators represent a new quantum state of matter which is characterized by edge or surface states and an insulating band gap in the bulk. In a two dimensional (2D) system based on the HgTe quantum well (QW) of critical width random deviations of the well width from its average value result in local crossovers from zero gap 2D Dirac fermion system to either the 2D topological insulato… ▽ More Topological insulators represent a new quantum state of matter which is characterized by edge or surface states and an insulating band gap in the bulk. In a two dimensional (2D) system based on the HgTe quantum well (QW) of critical width random deviations of the well width from its average value result in local crossovers from zero gap 2D Dirac fermion system to either the 2D topological insulator or the ordinary insulator, forming a complicated in-plane network of helical channels along the zero-gap lines. We have studied experimentally the transport properties of the critical width HgTe quantum wells near the Dirac point, where the conductance is determined by a percolation along the zero-gap lines. The experimental results confirm the presence of percolating conducting channels of a finite width. Our work establishes the critical width HgTe QW as a promising platform for the study of the interplay between topology and localization. △ Less

Submitted 30 November, 2021; originally announced November 2021.

Comments: 7 pages, 5 figures

Journal ref: 2D Mater. 9, 015021, 2022

HgTe quantum wells for QHE metrology under soft cryomagnetic conditions: permanent magnets and liquid ${^4He}$ temperatures

Authors: I. Yahniuk, A. Kazakov, B. Jouault, S. S. Krishtopenko, S. Kret, G. Grabecki, G. Cywiński, N. N. Mikhailov, S. A. Dvoretskii, J. Przybytek, V. I. Gavrilenko, F. Teppe, T. Dietl, W. Knap

Abstract: HgTe quantum wells with a thickness of ${\sim}$7 nm may have a graphene-like band structure and have been recently proposed to be potential candidates for quantum Hall effect (QHE) resistance standards under the condition of operation in the fields above certain critical field $B_c$, above which the topological phase (with parasitic edge conduction) disappears. We present experimental studies of t… ▽ More HgTe quantum wells with a thickness of ${\sim}$7 nm may have a graphene-like band structure and have been recently proposed to be potential candidates for quantum Hall effect (QHE) resistance standards under the condition of operation in the fields above certain critical field $B_c$, above which the topological phase (with parasitic edge conduction) disappears. We present experimental studies of the magnetoresistance of different of HgTe quantum wells as a function temperature and magnetic field, determining the critical magnetic field $B_c$. We demonstrate that for QWs of specific width $B_c$ becomes low enough to grant observation of remarkably wide QHE plateaus at the filling factor ${v=-1}$ (holes) in relaxed cryomagnetic conditions: while using commercial 0.82 T Neodymium permanent magnets and temperature of a few Kelvin provided by ${^4He}$ liquid system only. Band structure calculations allow us to explain qualitatively observed phenomena due to the interplay between light holes and heavy holes energy sub-bands (side maxima of the valence band). Our work clearly shows that the peculiar band structure properties of HgTe QWs with massless Dirac fermions make them an ideal platform for develo** metrological devices with relaxed cryomagnetic conditions. △ Less

Submitted 15 November, 2021; originally announced November 2021.

$4π$-periodic supercurrent tuned by an axial magnetic flux in topological insulator nanowires

Authors: Ralf Fischer, Jordi Picó-Cortés, Wolfgang Himmler, Gloria Platero, Milena Grifoni, Dmitriy A. Kozlov, N. N. Mikhailov, Sergey A. Dvoretsky, Christoph Strunk, Dieter Weiss

Abstract: Topological insulator (TI) nanowires in proximity with conventional superconductors have been proposed as a tunable platform to realize topological superconductivity and Majorana zero modes (MZM). The tuning is done using an axial magnetic flux $Φ$ which allows transforming the system from trivial at $Φ=0$ to topologically nontrivial when half a magnetic flux quantum $Φ_0/2$ threads the wire's cro… ▽ More Topological insulator (TI) nanowires in proximity with conventional superconductors have been proposed as a tunable platform to realize topological superconductivity and Majorana zero modes (MZM). The tuning is done using an axial magnetic flux $Φ$ which allows transforming the system from trivial at $Φ=0$ to topologically nontrivial when half a magnetic flux quantum $Φ_0/2$ threads the wire's cross-section. Here we explore the expected topological transition in TI-wire-based Josephson junctions as a function of magnetic flux by probing the $4π$-periodic fraction of the supercurrent, which is considered as an indicator of topological superconductivity. Our data suggest that this $4π$-periodic supercurrent is at lower magnetic field largely of trivial origin, but that at magnetic fields above $\simΦ_{0}/4$ topological $4π$-periodic supercurrents take over. △ Less

Submitted 11 October, 2021; originally announced October 2021.

Energy spectrum of semimetallic HgTe quantum wells

Authors: Jan Gospodaric, Alexey Shuvaev, Nikolai N. Mikhailov, Ze D. Kvon, Elena G. Novik, Andrei Pimenov

Abstract: Quantum wells (QWs) based on mercury telluride (HgTe) thin films provide a large scale of unusual physical properties starting from an insulator via a two-dimensional Dirac semimetal to a three-dimensional topological insulator. These properties result from the dramatic change of the QW band structure with the HgTe film thickness. Although being a key property, these energy dispersion relations ca… ▽ More Quantum wells (QWs) based on mercury telluride (HgTe) thin films provide a large scale of unusual physical properties starting from an insulator via a two-dimensional Dirac semimetal to a three-dimensional topological insulator. These properties result from the dramatic change of the QW band structure with the HgTe film thickness. Although being a key property, these energy dispersion relations cannot be reflected in experiments due to the lack of appropriate tools. Here we report an experimental and theoretical study of two HgTe quantum wells with inverted energy spectrum in which two-dimensional semimetallic states are realized. Using magneto-optical spectroscopy at sub-THz frequencies we were able to obtain information about electron and hole cyclotron masses at all relevant Fermi level positions and different charge densities. The outcome is also supported by a Shubnikov-de Haas analysis of capacitance measurements, which allows obtaining information about the degeneracy of the active modes. From these data, it is possible to reconstruct electron and hole dispersion relations. Detailed comparative analysis of the energy dispersion relations with theoretical calculations demonstrates a good agreement, reflecting even several subtle features like band splitting, the second conduction band, and the overlaps between the first conduction and first valence band. Our study demonstrates that the cyclotron resonance experiments can be efficiently used to directly obtain the band structures of semimetallic 2D materials. △ Less

Submitted 15 September, 2021; originally announced September 2021.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 104, 115307 (2021)

Magnetohydrodynamics and electro-electron interaction of massless Dirac fermions

Authors: D. A. Khudaiberdiev, G. M. Gusev, E. B. Olshanetsky, Z. D. Kvon, N. N. Mikhailov

Abstract: The magnetotransport properties of massless Dirac fermions in a gapless HgTe quantum well are investigated. In samples with narrow channels, a large negative magnetoresistance with a Lorentzian profile is observed, which is interpreted as a manifestation of electron viscosity due to electron-electron interaction. Comparison of experiment with theory yields the shear stress relaxation time of the D… ▽ More The magnetotransport properties of massless Dirac fermions in a gapless HgTe quantum well are investigated. In samples with narrow channels, a large negative magnetoresistance with a Lorentzian profile is observed, which is interpreted as a manifestation of electron viscosity due to electron-electron interaction. Comparison of experiment with theory yields the shear stress relaxation time of the Dirac fermions caused by electron-electron scattering. △ Less

Submitted 30 July, 2021; originally announced July 2021.

Comments: 8 pages , 9 figures

Journal ref: Physical Review RESEARCH 3, L032031 (2021)

Localization of the Helical Edge States in the Absense of External Magnetic Field

Authors: A. V. Bubis, N. N. Mikhailov, S. A. Dvoretsky, A. G. Nasibulin, E. S. Tikhonov

Abstract: Theoretically, the helical edge states of two-dimensional topological insulators are protected from coherent backscattering due to nonmagnetic disorder provided electron interactions are not too strong. Experimentally, the edges typically do not demonstrate the systematic and robust quantization, at the same time little is known about the sub-Kelvin temperature behavior. Here, we report the surpri… ▽ More Theoretically, the helical edge states of two-dimensional topological insulators are protected from coherent backscattering due to nonmagnetic disorder provided electron interactions are not too strong. Experimentally, the edges typically do not demonstrate the systematic and robust quantization, at the same time little is known about the sub-Kelvin temperature behavior. Here, we report the surprising localization of the edge states in an 8 nm HgTe quantum well in zero magnetic field at millikelvin temperatures. Additionally, the magnetoresistance data at 0.5 K for the edges few micrometers long suggests the field-dependent localization length $l_B\propto B^{-α}$, with $α$ ranging approximately from $1.6$ to $2.8$ at fields $B\lesssim0.1\,\text{T}$ and $α\approx1.1$ at higher fields up to $0.5\,\text{T}$. In the frame of disordered interacting edge, these values of $α$ correspond to the Luttinger liquid parameters $K\approx 0.9-1.1$ and $K\approx 0.6$, respectively. We discuss possible scenarios which could result in the zero magnetic field localization. △ Less

Submitted 27 April, 2021; originally announced April 2021.

Journal ref: Phys. Rev. B 104, 195405 (2021)

Multiple crossing of Landau levels of two-dimensional fermions in double HgTe quantum wells

Authors: G. M. Gusev, E. B. Olshanetsky, F. G. G. Hernandez, O. E. Raichev, N. N. Mikhailov, S. A. Dvoretsky

Abstract: The double quantum well systems consisting of two HgTe layers separated by a tunnel-transparent barrier are expected to manifest a variety of phase states including two-dimensional gapless semimetal and two-dimensional topological insulator. The presence of several subbands in such systems leads to a rich filling factor diagram in the quantum Hall regime. We have performed magnetotransport measure… ▽ More The double quantum well systems consisting of two HgTe layers separated by a tunnel-transparent barrier are expected to manifest a variety of phase states including two-dimensional gapless semimetal and two-dimensional topological insulator. The presence of several subbands in such systems leads to a rich filling factor diagram in the quantum Hall regime. We have performed magnetotransport measurements of the HgTe-based double quantum wells in both gapless and gapped state and observed numerous crossings between the Landau levels belonging to different subbands. We analyze the Landau level crossing patterns and compare them to the results of theoretical calculations. △ Less

Submitted 13 January, 2021; originally announced January 2021.

Comments: 8 pages, 6 figures

Journal ref: Physical Review B 103, 035302 (2021)

Topological insulators based on HgTe

Authors: Z. D. Kvon, D. A. Kozlov, E. B. Olshanetsky, G. M. Gusev, N. N. Mikhailov, S. A. Dvoretsky

Abstract: The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and diffusion transport, the magnetic breakdown of 2D TIs, and an anomalous temperature dependence of edge-channel resistance. In 3D TIs, a record-setting high mobility… ▽ More The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and diffusion transport, the magnetic breakdown of 2D TIs, and an anomalous temperature dependence of edge-channel resistance. In 3D TIs, a record-setting high mobility of surface two-dimensional Dirac fermions (DFs) has been attained. This enabled determining all the main TI parameters (the bulk gap and the density of DFs on both of its surfaces) and provided information on the phase of the Shubnikov - de Haas oscillations of DFs, which indicates the rigid topological coupling between the fermion spin and momentum. Prospects for further research are discussed in the conclusion. △ Less

Submitted 26 December, 2020; originally announced December 2020.

Comments: 18 pages, 24 figures

Journal ref: Physics - Uspekhi, 63(7) 629 - 647 (2020)

Band structure of a HgTe-based three-dimensional topological insulator

Authors: J. Gospodaric, V. Dziom, A. Shuvaev, A. A. Dobretsova, N. N. Mikhailov, Z. D. Kvon, E. G. Novik, A. Pimenov

Abstract: From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to detect separate resonance modes corresponding to the surface states at two opposite film interfaces, the bulk conduction band, and the valence band. The experiment… ▽ More From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to detect separate resonance modes corresponding to the surface states at two opposite film interfaces, the bulk conduction band, and the valence band. The experimental band structure agrees reasonably well with the predictions of the $\mathbf{k\cdot p}$ model. Due to the strong hybridization of the surface and bulk bands, the dispersion of the surface states is close to parabolic in the broad range of the electron energies. △ Less

Submitted 19 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. B 102, 115113 (2020)

Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film

Authors: M. L. Savchenko, M. Otteneder, I. A. Dmitriev, N. N. Mikhailov, Z. D. Kvon, S. D. Ganichev

Abstract: We report on a detailed study of the terahertz (THz) photoresistivity in a strained HgTe three-dimensional topological insulator (3D TI) for all Fermi level positions: inside the conduction and valence bands, and in the bulk gap. In the presence of a magnetic field we detect a resonance corresponding to the cyclotron resonance (CR) in the top surface Dirac fermions (DF) and examine the nontrivial… ▽ More We report on a detailed study of the terahertz (THz) photoresistivity in a strained HgTe three-dimensional topological insulator (3D TI) for all Fermi level positions: inside the conduction and valence bands, and in the bulk gap. In the presence of a magnetic field we detect a resonance corresponding to the cyclotron resonance (CR) in the top surface Dirac fermions (DF) and examine the nontrivial dependence of the surface state cyclotron mass on the Fermi level position. We also detect additional resonant features at moderate electron densities and demonstrate that they are caused by the mixing of surface DF and bulk electrons. At high electron densities, we observe THz radiation induced 1/B-periodic low-field magneto-oscillations coupled to harmonics of the CR and demonstrate that they have a common origin with microwave-induced resistance oscillations (MIRO) previously observed in high mobility GaAs-based heterostructures. This observation attests the superior quality of 2D electron system formed by helical surface states in strained HgTe films. △ Less

Submitted 20 November, 2020; v1 submitted 11 August, 2020; originally announced August 2020.

Weak antilocalization in partially relaxed 200-nm HgTe films

Authors: M. L. Savchenko, D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky

Abstract: The anomalous magnetoresistance caused by the weak antilocalization (WAL) effects in 200-nm HgTe films is experimentally studied. The film is a high quality 3D topological insulator with much stronger spatial separation of surface states than in previously studied thinner HgTe structures. However, in contrast to that films, the system under study is characterized by a reduced partial strain result… ▽ More The anomalous magnetoresistance caused by the weak antilocalization (WAL) effects in 200-nm HgTe films is experimentally studied. The film is a high quality 3D topological insulator with much stronger spatial separation of surface states than in previously studied thinner HgTe structures. However, in contrast to that films, the system under study is characterized by a reduced partial strain resulting in an almost zero bulk energy gap. It has been shown that at all positions of the Fermi level the system exhibits a WAL conductivity correction superimposed on classical parabolic magnetoresistance. Since high mobility of carriers, the analysis of the obtained results was performed using a ballistic WAL theory. The maximum of the WAL conductivity correction amplitude was found at a Fermi level position near the bulk energy gap indicating to full decoupling of the surface carriers in these conditions. The WAL amplitude monotonously decreases when the density of either bulk electrons or holes increases that results from the increasing coupling between surface and bulk carriers. △ Less

Submitted 16 June, 2020; originally announced June 2020.

Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well

Authors: A. S. Yaroshevich, Z. D. Kvon, G. M. Gusev, N. N. Mikhailov

Abstract: The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110-169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanis… ▽ More The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110-169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanism is caused by the action of radiation on the bulk of the quantum well. △ Less

Submitted 4 May, 2020; originally announced May 2020.

Comments: 4 pages, 4 figures

Journal ref: JETP Letters, v 111, 2, 121-125 (2020)

Two-dimensional topological insulator state in double HgTe quantum well

Authors: G. M. Gusev, E. B. Olshanetsky, F. G. G. Hernandez, O. E. Raichev, N. N. Mikhailov, S. A. Dvoretsky

Abstract: The two-dimensional topological insulator phase has been observed previously in single HgTe-based quantum wells with inverted subband ordering. In double quantum wells (DQWs), coupling between the layers introduces additional degrees of freedom leading to a rich phase picture. By studying local and nonlocal resistance in HgTe-based DQWs, we observe both the gapless semimetal phase and the topologi… ▽ More The two-dimensional topological insulator phase has been observed previously in single HgTe-based quantum wells with inverted subband ordering. In double quantum wells (DQWs), coupling between the layers introduces additional degrees of freedom leading to a rich phase picture. By studying local and nonlocal resistance in HgTe-based DQWs, we observe both the gapless semimetal phase and the topological insulator phase, depending on parameters of the samples and according to theoretical predictions. Our work establishes the DQWs as a promising platform for realization of multilayer topological insulators. △ Less

Submitted 8 April, 2020; originally announced April 2020.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. B 101, 241302 (2020)

Magneto-intersubband oscillations in two dimensional systems with energy spectrum split due to spin-orbit interaction

Authors: G. M. Minkov, O. E. Rut, A. A. Sherstobitov, A. V. Germanenko, S. A. Dvoretski, N. N. Mikhailov, S. V. Ivanov, V. A. Soloviev, M. U. Chernov

Abstract: In the present paper we study magneto-intersubband oscillations (MISO) in HgTe/Hg$_{1-x}$Cd$_x$Te single quantum well with "inverted" and "normal" spectra and in conventional In$_{1-x}$Ga$_x$As/In$_{1-y}$Al$_y$As quantum wells with normal band ordering. For all the cases when two branches of the spectrum arise due to spin-orbit splitting, the mutual arrangement of the antinodes of the Shubnikov-de… ▽ More In the present paper we study magneto-intersubband oscillations (MISO) in HgTe/Hg$_{1-x}$Cd$_x$Te single quantum well with "inverted" and "normal" spectra and in conventional In$_{1-x}$Ga$_x$As/In$_{1-y}$Al$_y$As quantum wells with normal band ordering. For all the cases when two branches of the spectrum arise due to spin-orbit splitting, the mutual arrangement of the antinodes of the Shubnikov-de Haas oscillations and the maxima of MISO occurs opposite to that observed in double quantum wells and in wide quantum wells with two subbands occupied and does not agree with the theoretical predictions. A "toy" model is supposed that explain qualitatively this unusual result. △ Less

Submitted 7 April, 2020; originally announced April 2020.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. B 101, 245303 (2020)

Quantum Hall effect and Landau levels in the 3D topological insulator HgTe

Authors: Johannes Ziegler, Dmitriy A. Kozlov, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Dieter Weiss

Abstract: We review low and high field magnetotransport in 80 nm-thick strained HgTe, a material that belongs to the class of strong three-dimensional topological insulators. Utilizing a top gate, the Fermi level can be tuned from the valence band via the Dirac surface states into the conduction band and allows studying Landau quantization in situations where different species of charge carriers contribute… ▽ More We review low and high field magnetotransport in 80 nm-thick strained HgTe, a material that belongs to the class of strong three-dimensional topological insulators. Utilizing a top gate, the Fermi level can be tuned from the valence band via the Dirac surface states into the conduction band and allows studying Landau quantization in situations where different species of charge carriers contribute to magnetotransport. Landau fan charts, map** the conductivity $ σ_{xx}(V_g, B) $ in the whole magnetic field - gate voltage range, can be divided into six areas, depending on the state of the participating carrier species. Key findings are: (i) the interplay of bulk holes (spin-degenerate) and Dirac surface electrons (non-degenerate), coexisting for $ E_F $ in the valence band, leads to a periodic switching between odd and even filling factors and thus odd and even quantized Hall voltage values. (ii) A similar though less pronounced behavior we found for coexisting Dirac surface and conduction band electrons. (iii) In the bulk gap, quantized Dirac electrons on the top-surface coexist at lower B with non-quantized ones on the bottom side, giving rise to quantum Hall plateau values depending - for a given filling factor - on the magnetic field strength. In stronger $ B $ fields, Landau level separation increases, charge transfer between different carrier species becomes energetically favorable and leads to the formation of a global (i.e. involving top and bottom surface) quantum Hall state. Simulations using the simplest possible theoretical approach are in line with the basic experimental findings, describing correctly the central features of the transitions from classical to quantum transport in the respective areas of our multicomponent charge carrier system. △ Less

Submitted 3 March, 2020; originally announced March 2020.

Comments: 12 pages, 6 figures

Journal ref: Phys. Rev. Research 2, 033003 (2020)

Anomalous phase shift of Shubnikov - de Haas oscillations in HgTe quantum well with inverted energy spectrum

Authors: Neverov V. N., Klepikova A. S., Bogolubskii A. S., Gudina S. V., Turutkin K. V., Shelushinina N. G. 1, Yakunin M. V., N. N. Mikhailov, S. A. Dvoretsky

Abstract: The results of the longitudinal and Hall magnetoresistivity measurements in the Shubnikov - de Haas oscillation regime for the HgCdTe/HgTe/HgCdTe heterostructures with a wide (20.3 nm) HgTe quantum well are presented. An anomalous phase shift of magneto-oscillations is detected: in the region of spin-unsplit peaks the longitudinal resistivity maxima are located at even filling factor numbers in co… ▽ More The results of the longitudinal and Hall magnetoresistivity measurements in the Shubnikov - de Haas oscillation regime for the HgCdTe/HgTe/HgCdTe heterostructures with a wide (20.3 nm) HgTe quantum well are presented. An anomalous phase shift of magneto-oscillations is detected: in the region of spin-unsplit peaks the longitudinal resistivity maxima are located at even filling factor numbers in contradiction with a conventional situation in 2D systems. It is shown that the observed features are associated with the inverted nature of the spectrum in the investigated quantum well with the electron-type conduction along the size-quantized subband H1 of HgTe band Γ8, for which the spin splitting is comparable to (and even greater than) the orbital one. The results obtained are compared with the phase shift effects of both magneto-oscillations and the plateau of the quantum Hall effect in monolayer graphene. △ Less

Submitted 6 February, 2020; originally announced February 2020.

Comments: 11 pages, 3 figures

Impact ionization induced by terahertz radiation in HgTe quantum wells of critical thickness

Authors: S. Hubmann, G. V. Budkin, M. Urban, V. V. Bel'kov, A. P. ~Dmitriev, J. Ziegler, D. A. Kozlov, N. N. Mikhailov, S. A. Dvoretsky, Z. D. Kvon, D. Weiss, S. D. Ganichev

Abstract: We report on the observation of terahertz (THz) radiation induced band-to-band impact ionization in \HgTe quantum well (QW) structures of critical thickness, which are characterized by a nearly linear energy dispersion. The THz electric field drives the carriers initializing electron-hole pair generation. The carrier multiplication is observed for photon energies less than the energy gap under the… ▽ More We report on the observation of terahertz (THz) radiation induced band-to-band impact ionization in \HgTe quantum well (QW) structures of critical thickness, which are characterized by a nearly linear energy dispersion. The THz electric field drives the carriers initializing electron-hole pair generation. The carrier multiplication is observed for photon energies less than the energy gap under the condition that the product of the radiation angular frequency $ω$ and momentum relaxation time $τ_{\text l}$ larger than unity. In this case, the charge carriers acquire high energies solely because of collisions in the presence of a high-frequency electric field. The developed microscopic theory shows that the probability of the light impact ionization is proportional to $\exp(-E_0^2/E^2)$, with the radiation electric field amplitude $E$ and the characteristic field parameter $E_0$. As observed in experiment, it exhibits a strong frequency dependence for $ωτ\gg 1$ characterized by the characteristic field $E_0$ linearly increasing with the radiation frequency $ω$. △ Less

Submitted 28 January, 2020; originally announced January 2020.

Terahertz Magnetospectroscopy of Cyclotron Resonances from Topological Surface States in Thick Films of Cd$_x$Hg$_{1-x}$Te

Authors: M. Otteneder, D. Sacré, I. Yahniuk, G. V. Budkin, K. Diendorfer, D. A. Kozlov, I. A. Dmitriev, N. N. Mikhailov, S. A. Dvoretsky, S. A. Tarasenko, V. V. Bel'kov, W. Knap, S. D. Ganichev

Abstract: We present studies of the cyclotron resonance (CR) in thick Cd$_x$Hg$_{1-x}$Te films with different cadmium concentrations corresponding to inverted and normal band order, as well as to an almost linear energy dispersion. Our results demonstrate that formation of two-dimensional topological surface states requires sharp interfaces between layers with inverted and normal band order, in which case t… ▽ More We present studies of the cyclotron resonance (CR) in thick Cd$_x$Hg$_{1-x}$Te films with different cadmium concentrations corresponding to inverted and normal band order, as well as to an almost linear energy dispersion. Our results demonstrate that formation of two-dimensional topological surface states requires sharp interfaces between layers with inverted and normal band order, in which case the corresponding CR is clearly observed for the out-of-plane orientation of magnetic field, but does not show up for an in-plane orientation. By contrast, all samples having more conventional technological design with smooth interfaces (i.e., containing regions of Cd$_x$Hg$_{1-x}$Te with gradually changing Cd content $x$) show equally pronounced CR in both in-plane and out-of-plane magnetic field revealing that CR is excited in three-dimensional states. Modeling of the surface states for different film designs supports our main observations. In all samples, we observe additional broad helicity-independent resonances which are attributed to photo-ionization and magnetic freeze-out of impurity states. △ Less

Submitted 13 January, 2020; originally announced January 2020.

Comments: 13 pages, 13 figures

Many-particle effects in optical transitions from zero-mode Landau levels in HgTe quantum wells

Authors: S. S. Krishtopenko, A. M. Kadykov, S. Gebert, S. Ruffenach, C. Consejo, J. Torres, C. Avogadri, B. Jouault, W. Knap, N. N. Mikhailov, S. A. Dvoretskii, F. Teppe

Abstract: We report on the far-infrared magnetospectroscopy of HgTe quantum wells with inverted band ordering at different electron concentrations. We particularly focus on optical transitions from zero-mode Landau levels, which split from the edges of electron-like and hole-like bands. We observe a pronounced dependence of the transition energies on the electron concentration varied by persistent photocond… ▽ More We report on the far-infrared magnetospectroscopy of HgTe quantum wells with inverted band ordering at different electron concentrations. We particularly focus on optical transitions from zero-mode Landau levels, which split from the edges of electron-like and hole-like bands. We observe a pronounced dependence of the transition energies on the electron concentration varied by persistent photoconductivity effect. This is striking evidence that in addition to the already well-documented crystalline and interface asymmetries, electron-electron interactions also have a significant impact on the usual behavior of the optical transitions from zero mode Landau levels. △ Less

Submitted 27 April, 2020; v1 submitted 10 December, 2019; originally announced December 2019.

Comments: 5 pages, 4 figures and supplemental materials

Journal ref: Phys. Rev. B 102, 041404 (2020)

Symmetry breaking and circular photogalvanic effect in epitaxial Cd$_x$Hg$_{1-x}$Te films

Authors: S. Hubmann, G. V. Budkin, M. Otteneder, D. But, D. Sacré, I. Yahniuk, K. Diendorfer, V. V. Bel'kov, D. A. Kozlov, N. N. Mikhailov, S. A. Dvoretsky, V. S. Varavin, V. G. Remesnik, S. A. Tarasenko, W. Knap, S. D. Ganichev

Abstract: We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende… ▽ More We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende crystals by symmetry arguments, therefore, its observation indicates either the symmetry reduction of bulk material or that the photocurrent is excited in the topological surface states formed in a material with low Cadmium concentration. We show that the bulk states play a crucial role because the CPGE was also clearly detected in samples with non-inverted band structure. We suggest that strain is a reason of the symmetry reduction. We develop a theory of the CPGE showing that the photocurrent results from the quantum interference of different pathways contributing to the free-carrier absorption (Drude-like) of monochromatic radiation. △ Less

Submitted 5 November, 2019; originally announced November 2019.

Comments: 11 pages, 7 figures

MSC Class: 78-05

Journal ref: Phys. Rev. Materials 4, 043607 (2020)

Mesoscopic transport in two-dimensional topological insulators

Authors: G. M. Gusev, Z. D Kvon, E. B. Olshanetsky, N. N. Mikhailov

Abstract: Topological states of matter have attracted a lot of attention due to their many intriguing transport properties. In particular, two-dimensional topological insulators (2D TI) possess gapless counter propagating conducting edge channels, with opposite spin, that are topologically protected from backscattering. Two basic features are supposed to confirm the existence of the ballistic edge channels… ▽ More Topological states of matter have attracted a lot of attention due to their many intriguing transport properties. In particular, two-dimensional topological insulators (2D TI) possess gapless counter propagating conducting edge channels, with opposite spin, that are topologically protected from backscattering. Two basic features are supposed to confirm the existence of the ballistic edge channels in the submicrometer limit: the 4-terminal conductance is expected to be quantized at the universal value $2e^{2}/h$, and a nonlocal signal should appear due to a net current along the sample edge, carried by the helical states. On the other hand for longer channels the conductance has been found to deviate from the quantized value. This article reviewer the experimental and theoretical work related to the transport in two-dimensional topological insulators (2D-TI), based on HgTe quantum wells in zero magnetic field. We provide an overview of the basic mechanisms predicting a deviation from the quantized transport due to backscattering (accompanied by spin-flips) between the helical channels. We discuss the details of the model, which takes into account the edge and bulk contribution to the total current and reproduces the experimental results. △ Less

Submitted 10 October, 2019; originally announced October 2019.

Comments: 13 pages, 12 figures

Journal ref: Invited Review article, Sol.St.Commun., Volume 302, 113701, November 2019

Aniotropy of in-plane g-factor of electrons in HgTe quantum wells

Authors: G. M. Minkov, V. Ya. Aleshkin, O. E. Rut, A. A. Sherstobitov, S. A. Dvoretski, N. N. Mikhailov, A. V. Germanenko

Abstract: The results of experimental studies of the Shubnikov-de Haas (SdH) efect in the (013)-HgTe/Hg$_{1-x}$Cd$_x$Te quantum wells (QWs) of electron type of conductivity both with normal and inverted energy spectrum are reported. Comprehensive analysis of the SdH oscillations measured for the different orientations of magnetic field relative to the quantum well plane and crystallographic exes allows us t… ▽ More The results of experimental studies of the Shubnikov-de Haas (SdH) efect in the (013)-HgTe/Hg$_{1-x}$Cd$_x$Te quantum wells (QWs) of electron type of conductivity both with normal and inverted energy spectrum are reported. Comprehensive analysis of the SdH oscillations measured for the different orientations of magnetic field relative to the quantum well plane and crystallographic exes allows us to investigate the anisotropy of the Zeeman effect. For the QWs with inverted spectrum, it has been shown that the ratio of the spin splitting to the orbital one is strongly dependent not only on the orientation of the magnetic field relative to the QW plane but also on the orientation of the in-plane magnetic field component relative to crystallographic axes laying in the QW plane that implies the strong anisotropy of in-plane g-factor. In the QW with normal spectrum, this ratio strongly depends on the angle between the magnetic field and the normal to the QW plane and reveals a very slight anisotropy in the QW plane. To interpret the data, the Landau levels in the tilted magnetic field are calculated within the framework of four-band \emph{kP} model. It is shown that the experimental results can be quantitatively described only with taking into account the interface inversion asymmetry. △ Less

Submitted 17 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. B 101, 085305 (2020)

Density of states measurements for heavy subband of holes in HgTe quantum wells

Authors: A. Yu. Kuntsevich, G. M. Minkov, A. A. Sherstobitov, Y. V. Tupikov, N. N. Mikhailov, S. A. Dvoretsky

Abstract: Valence band in narrow HgTe quantum wells contains well-conductive Dirac-like light holes at the $Γ$ point and poorly conductive heavy hole subband located in the local valleys. Here we propose and employ two methods to measure the density of states for these heavy holes. The first method uses a gate-recharging technique to measure thermodynamical entropy per particle. As the Fermi level is tuned… ▽ More Valence band in narrow HgTe quantum wells contains well-conductive Dirac-like light holes at the $Γ$ point and poorly conductive heavy hole subband located in the local valleys. Here we propose and employ two methods to measure the density of states for these heavy holes. The first method uses a gate-recharging technique to measure thermodynamical entropy per particle. As the Fermi level is tuned with gate voltage from light to heavy subband, the entropy increases dramatically, and the value of this increase gives an estimate for the density of states. The second method determines the density of states for heavy holes indirectly from the gate voltage dependence of the period of the Shubnikov-de Haas oscillations for light holes. The results obtained by both methods are in the reasonable agreement with each other. Our approaches can be applied to measure large effective carrier masses in other two-dimensional gated systems. △ Less

Submitted 11 December, 2019; v1 submitted 17 July, 2019; originally announced July 2019.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. B 101, 085301 (2020)

Suppressed Auger scattering and tunable light emission of Landau-quantized massless Kane electrons

Authors: D. B. But, M. Mittendorff, C. Consejo, F. Teppe, N. N. Mikhailov, S. A. Dvoretskii, C. Faugeras, S. Winnerl, M. Helm, W. Knap, M. Potemski, M. Orlita

Abstract: The Landau level laser has been proposed a long time ago as a unique source of monochromatic radiation, widely tunable in the THz and infrared spectral ranges using an externally applied magnetic field. In spite of decades of efforts, this appealing concept never resulted in the design of a reliable device. This is due to efficient Auger scattering of Landau-quantized electrons, which is an intrin… ▽ More The Landau level laser has been proposed a long time ago as a unique source of monochromatic radiation, widely tunable in the THz and infrared spectral ranges using an externally applied magnetic field. In spite of decades of efforts, this appealing concept never resulted in the design of a reliable device. This is due to efficient Auger scattering of Landau-quantized electrons, which is an intrinsic non-radiative recombination channel that eventually gains over cyclotron emission in all materials studied so far: in conventional semiconductors with parabolic bands, but also in graphene with massless electrons. The Auger processes are favored in these systems by Landau levels (or their subsets) equally spaced in energy. Here we show that this scheme does not apply to massless Kane electrons in gapless HgCdTe alloy, in which undesirable Auger scattering is strongly suppressed and the sizeable cyclotron emission observed, for the first time in the case of massless particles. The gapless HgCdTe thus appears as a material of choice for future technology of Landau level lasers. △ Less

Submitted 21 July, 2020; v1 submitted 26 June, 2019; originally announced June 2019.

Comments: 11 pages, 7 figures including Supplementary materials

Journal ref: Nature Photonics 13, 783-787 (2019)

Anomalous Decay of Quantum Resistance Oscillations of Two Dimensional Helical Electrons in Magnetic Field

Authors: S. Abedi, S. A. Vitkalov, N. N. Mikhailov, Z. D. Kvon

Abstract: Shubnikov de Haas resistance oscillations of highly mobile two dimensional helical electrons propagating on a conducting surface of strained HgTe 3D topological insulator are studied in magnetic fields B tilted by angle $θ$ from the normal to the conducting layer. Strong decrease of oscillation amplitude A is observed with the tilt: $A \sim \exp(-ξ/cos(θ))$, where $ξ$ is a constant. Evolution of t… ▽ More Shubnikov de Haas resistance oscillations of highly mobile two dimensional helical electrons propagating on a conducting surface of strained HgTe 3D topological insulator are studied in magnetic fields B tilted by angle $θ$ from the normal to the conducting layer. Strong decrease of oscillation amplitude A is observed with the tilt: $A \sim \exp(-ξ/cos(θ))$, where $ξ$ is a constant. Evolution of the oscillations with temperature T shows that the parameter $ξ$ contains two terms: $ξ=ξ_1+ξ_2 T$. The temperature independent term, $ξ_1$, describes reduction of electron mean free path in magnetic field B pointing toward suppression of the topological protection of the electron states against impurity scattering. The temperature dependent term, $ξ_2 T$, indicates increase of the reciprocal velocity of 2D helical electrons suggesting modification of the electron spectrum in magnetic fields. △ Less

Submitted 8 June, 2019; originally announced June 2019.

Comments: 5 pages, 5 figures

Journal ref: Sci Rep 10, 7875 (2020)

Superradiant and transport lifetimes of the cyclotron resonance in the topological insulator HgTe

Authors: J. Gospodaric, V. Dziom, A. Shuvaev, A. A. Dobretsova, N. N. Mikhailov, Z. D. Kvon, A. Pimenov

Abstract: We investigate the superradiance effects in three-dimensional topological insulator HgTe with conducting surface states. We demonstrate that the superradiance can be explained using the classical electrodynamic approach. Experiments using the continuous-wave spectroscopy allowed to separate the energy losses in the system into intrinsic and radiation losses, respectively. These results demonstrate… ▽ More We investigate the superradiance effects in three-dimensional topological insulator HgTe with conducting surface states. We demonstrate that the superradiance can be explained using the classical electrodynamic approach. Experiments using the continuous-wave spectroscopy allowed to separate the energy losses in the system into intrinsic and radiation losses, respectively. These results demonstrate that the superradiance effects are not sensitive to the details of the band structure of the material. △ Less

Submitted 16 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. B 99, 115130 (2019)

Topological protection brought to light by the time-reversal symmetry breaking

Authors: S. U. Piatrusha, E. S. Tikhonov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, V. S. Khrapai

Abstract: Recent topological band theory distinguishes electronic band insulators with respect to various symmetries and topological invariants, most commonly, the time reversal symmetry and the $\rm Z_2$ invariant. The interface of two topologically distinct insulators hosts a unique class of electronic states -- the helical states, which shortcut the gapped bulk and exhibit spin-momentum locking. The magi… ▽ More Recent topological band theory distinguishes electronic band insulators with respect to various symmetries and topological invariants, most commonly, the time reversal symmetry and the $\rm Z_2$ invariant. The interface of two topologically distinct insulators hosts a unique class of electronic states -- the helical states, which shortcut the gapped bulk and exhibit spin-momentum locking. The magic and so far elusive property of the helical electrons, known as topological protection, prevents them from coherent backscattering as long as the underlying symmetry is preserved. Here we present an experiment which brings to light the strength of topological protection in one-dimensional helical edge states of a $\rm Z_2$ quantum spin-Hall insulator in HgTe. At low temperatures, we observe the dramatic impact of a tiny magnetic field, which results in an exponential increase of the resistance accompanied by giant mesoscopic fluctuations and a gap opening. This textbook Anderson localization scenario emerges only upon the time-reversal symmetry breaking, bringing the first direct evidence of the topological protection strength in helical edge states. △ Less

Submitted 12 July, 2019; v1 submitted 26 February, 2019; originally announced February 2019.

Comments: version accepted by Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 123, 056801 (2019)

Cyclotron resonance induced photogalvanic effect in surface states of 200 nm thick strained HgTe films

Authors: S. Candussio, G. V. Budkin, M. Otteneder, D. A. Kozlov, I. A. Dmitriev, V. V. Bel'kov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, S. D. Ganichev

Abstract: We report on the study of magneto-photogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant… ▽ More We report on the study of magneto-photogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant resonant photocurrent caused by the cyclotron resonance in the surface states. The resonant photocurrent is also detected in the reference fully strained 80 nm HgTe films previously shown to be fully gapped 3D topological insulators. We show that the resonance positions in both types of films almost coincide demonstrating the existence of topologically protected surface states in thick HgTe films. The conclusion is supported by magnetotransport experiments. △ Less

Submitted 2 May, 2019; v1 submitted 8 February, 2019; originally announced February 2019.

Comments: 11 pages, 8 figures

Journal ref: Phys. Rev. Materials 3, 054205 (2019)

Two-dimension Dirac fermions system in CdHgTe quantum wells

Authors: M. L. Savchenko, D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, B. A. Piot

Abstract: We report on transport and capacitance spectroscopy study of two kinds of quantum wells, namely Cd$_{0.02}$Hg$_{0.98}$Te and Cd$_{0.06}$Hg$_{0.94}$Te with the thicknesses of 7.4 and 11.5 nm, accordingly. The fraction of Cd was chosen in a way that the both quantum wells are expected to have gapless band structure typical for a Dirac fermions system. We have established that the first quantum well… ▽ More We report on transport and capacitance spectroscopy study of two kinds of quantum wells, namely Cd$_{0.02}$Hg$_{0.98}$Te and Cd$_{0.06}$Hg$_{0.94}$Te with the thicknesses of 7.4 and 11.5 nm, accordingly. The fraction of Cd was chosen in a way that the both quantum wells are expected to have gapless band structure typical for a Dirac fermions system. We have established that the first quantum well exhibits a massless Dirac fermions system with a quality slightly better then in conventional HgTe quantum wells of critical thickness. Second quantum well exhibits a high-quality two-dimensional topological insulator state with the energy gap of around 10 meV and well-defined edge transport making it as a good candidate for further study and applications of topological insulators. △ Less

Submitted 29 January, 2019; originally announced January 2019.

Comments: 5 pages, 5 figures

Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well

Authors: G. M. Gusev, O. E. Raichev, E. B. Olshanetsky, A. D. Levin, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky

Abstract: The thermoelectric response of HgTe quantum wells in the state of two-dimensional topological insulator (2D TI) has been studied experimentally. Ambipolar thermopower, typical for an electron-hole system, has been observed across the charge neutrality point, where the carrier type changes from electrons to holes according to the resistance measurements. The hole-type thermopower is much stronger t… ▽ More The thermoelectric response of HgTe quantum wells in the state of two-dimensional topological insulator (2D TI) has been studied experimentally. Ambipolar thermopower, typical for an electron-hole system, has been observed across the charge neutrality point, where the carrier type changes from electrons to holes according to the resistance measurements. The hole-type thermopower is much stronger than the electron-type one. The thermopower linearly increases with temperature. We present a theoretical model which accounts for both the edge and bulk contributions to the electrical conductivity and thermoelectric effect in a 2D TI, including the effects of edge to bulk leakage. The model, contrary to previous theoretical studies, demonstrates that the 2D TI is not expected to show anomalies of thermopower near the band conductivity threshold, which is consistent with our experimental results. Based on the experimental data and theoretical analysis, we conclude that the observed thermopower is mostly of the bulk origin, while the resistance is determined by both the edge and bulk transport. △ Less

Submitted 21 December, 2018; originally announced December 2018.

Comments: 21 pages, 7 figures

Journal ref: 2D Materials, 6, 014001, 2019

Thermopower of a Two-Dimensional Semimetal in a HgTe Quantum Well

Authors: E. B. Olshanetsky, Z. D. Kvon, M. V. Entin, L. I. Magarill, A. Levin, G. M. Gusev, N. N. Mikhailov

Abstract: The thermopower in a two-dimensional semimetal existing in HgTe quantum wells 18-21 nm thick has been studied experimentally and theoretically for the first time. It has been found theoretically and experimentally that the thermopower has two components - diffusion and phonon drag and that the second component is several times larger than the first. It has been concluded that the electron-hole sca… ▽ More The thermopower in a two-dimensional semimetal existing in HgTe quantum wells 18-21 nm thick has been studied experimentally and theoretically for the first time. It has been found theoretically and experimentally that the thermopower has two components - diffusion and phonon drag and that the second component is several times larger than the first. It has been concluded that the electron-hole scattering plays an important role in both mechanisms of the thermopower. △ Less

Submitted 19 December, 2018; originally announced December 2018.

Journal ref: JETP Lett. 107, 789 (2018)