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Microwave-based quantum control and coherence protection of tin-vacancy spin qubits in a strain-tuned diamond membrane heterostructure
Authors:
Xinghan Guo,
Alexander M. Stramma,
Zixi Li,
William G. Roth,
Benchen Huang,
Yu **,
Ryan A. Parker,
Jesús Arjona Martínez,
Noah Shofer,
Cathryn P. Michaels,
Carola P. Purser,
Martin H. Appel,
Evgeny M. Alexeev,
Tianle Liu,
Andrea C. Ferrari,
David D. Awschalom,
Nazar Delegan,
Benjamin **ault,
Giulia Galli,
F. Joseph Heremans,
Mete Atatüre,
Alexander A. High
Abstract:
Robust spin-photon interfaces in solids are essential components in quantum networking and sensing technologies. Ideally, these interfaces combine a long-lived spin memory, coherent optical transitions, fast and high-fidelity spin manipulation, and straightforward device integration and scaling. The tin-vacancy center (SnV) in diamond is a promising spin-photon interface with desirable optical and…
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Robust spin-photon interfaces in solids are essential components in quantum networking and sensing technologies. Ideally, these interfaces combine a long-lived spin memory, coherent optical transitions, fast and high-fidelity spin manipulation, and straightforward device integration and scaling. The tin-vacancy center (SnV) in diamond is a promising spin-photon interface with desirable optical and spin properties at 1.7 K. However, the SnV spin lacks efficient microwave control and its spin coherence degrades with higher temperature. In this work, we introduce a new platform that overcomes these challenges - SnV centers in uniformly strained thin diamond membranes. The controlled generation of crystal strain introduces orbital mixing that allows microwave control of the spin state with 99.36(9) % gate fidelity and spin coherence protection beyond a millisecond. Moreover, the presence of crystal strain suppresses temperature dependent dephasing processes, leading to a considerable improvement of the coherence time up to 223(10) $μ$s at 4 K, a widely accessible temperature in common cryogenic systems. Critically, the coherence of optical transitions is unaffected by the elevated temperature, exhibiting nearly lifetime-limited optical linewidths. Combined with the compatibility of diamond membranes with device integration, the demonstrated platform is an ideal spin-photon interface for future quantum technologies.
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Submitted 6 October, 2023; v1 submitted 21 July, 2023;
originally announced July 2023.
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A diamond nanophotonic interface with an optically accessible deterministic electronuclear spin register
Authors:
Ryan A. Parker,
Jesús Arjona Martínez,
Kevin C. Chen,
Alexander M. Stramma,
Isaac B. Harris,
Cathryn P. Michaels,
Matthew E. Trusheim,
Martin Hayhurst Appel,
Carola M. Purser,
William G. Roth,
Dirk Englund,
Mete Atatüre
Abstract:
A contemporary challenge for the scalability of quantum networks is develo** quantum nodes with simultaneous high photonic efficiency and long-lived qubits. Here, we present a fibre-packaged nanophotonic diamond waveguide hosting a tin-vacancy centre with a spin-1/2 $^{117}$Sn nucleus. The interaction between the electronic and nuclear spins results in a signature 452(7) MHz hyperfine splitting.…
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A contemporary challenge for the scalability of quantum networks is develo** quantum nodes with simultaneous high photonic efficiency and long-lived qubits. Here, we present a fibre-packaged nanophotonic diamond waveguide hosting a tin-vacancy centre with a spin-1/2 $^{117}$Sn nucleus. The interaction between the electronic and nuclear spins results in a signature 452(7) MHz hyperfine splitting. This exceeds the natural optical linewidth by a factor of 16, enabling direct optical nuclear-spin initialisation with 98.6(3)% fidelity and single-shot readout with 80(1)% fidelity. The waveguide-to-fibre extraction efficiency of our device of 57(6)% enables the practical detection of 5-photon events. Combining the photonic performance with the optically initialised nuclear spin, we demonstrate a spin-gated single-photon nonlinearity with 11(1)% contrast in the absence of an external magnetic field. These capabilities position our nanophotonic interface as a versatile quantum node in the pursuit of scalable quantum networks.
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Submitted 30 May, 2023;
originally announced May 2023.
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Photonic indistinguishability of the tin-vacancy center in nanostructured diamond
Authors:
Jesús Arjona Martínez,
Ryan A. Parker,
Kevin C. Chen,
Carola M. Purser,
Linsen Li,
Cathryn P. Michaels,
Alexander M. Stramma,
Romain Debroux,
Isaac B. Harris,
Martin Hayhurst Appel,
Eleanor C. Nichols,
Matthew E. Trusheim,
Dorian A. Gangloff,
Dirk Englund,
Mete Atatüre
Abstract:
Tin-vacancy centers in diamond are promising spin-photon interfaces owing to their high quantum-efficiency, large Debye-Waller factor, and compatibility with photonic nanostructuring. Benchmarking their single-photon indistinguishability is a key challenge for future applications. Here, we report the generation of single photons with $99.7^{+0.3}_{-2.5}\%$ purity and $63(9)\%$ indistinguishability…
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Tin-vacancy centers in diamond are promising spin-photon interfaces owing to their high quantum-efficiency, large Debye-Waller factor, and compatibility with photonic nanostructuring. Benchmarking their single-photon indistinguishability is a key challenge for future applications. Here, we report the generation of single photons with $99.7^{+0.3}_{-2.5}\%$ purity and $63(9)\%$ indistinguishability from a resonantly excited tin-vacancy center in a single-mode waveguide. We obtain quantum control of the optical transition with $1.71(1)$-ns-long $π$-pulses of $77.1(8)\%$ fidelity. A modest Purcell enhancement factor of 12 would enhance the indistinguishability to $95$\%. The greater than $100$ ms spectral stability shown would then enable strings of up to $10^6$ identical photons to be generated.
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Submitted 30 June, 2022;
originally announced June 2022.
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Quantum control of the tin-vacancy spin qubit in diamond
Authors:
Romain Debroux,
Cathryn P. Michaels,
Carola M. Purser,
Noel Wan,
Matthew E. Trusheim,
Jesús Arjona Martínez,
Ryan A. Parker,
Alexander M. Stramma,
Kevin C. Chen,
Lorenzo de Santis,
Evgeny M. Alexeev,
Andrea C. Ferrari,
Dirk Englund,
Dorian A. Gangloff,
Mete Atatüre
Abstract:
Group-IV color centers in diamond are a promising light-matter interface for quantum networking devices. The negatively charged tin-vacancy center (SnV) is particularly interesting, as its large spin-orbit coupling offers strong protection against phonon dephasing and robust cyclicity of its optical transitions towards spin-photon entanglement schemes. Here, we demonstrate multi-axis coherent cont…
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Group-IV color centers in diamond are a promising light-matter interface for quantum networking devices. The negatively charged tin-vacancy center (SnV) is particularly interesting, as its large spin-orbit coupling offers strong protection against phonon dephasing and robust cyclicity of its optical transitions towards spin-photon entanglement schemes. Here, we demonstrate multi-axis coherent control of the SnV spin qubit via an all-optical stimulated Raman drive between the ground and excited states. We use coherent population trap** and optically driven electronic spin resonance to confirm coherent access to the qubit at 1.7 K, and obtain spin Rabi oscillations at a rate of $Ω/2π$=3.6(1) MHz. All-optical Ramsey interferometry reveals a spin dephasing time of $T_2^*$=1.3(3)$μ$s and two-pulse dynamical decoupling already extends the spin coherence time to $T_2$=0.33(14) ms. Combined with transform-limited photons and integration into photonic nanostructures, our results make the SnV a competitive spin-photon building block for quantum networks.
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Submitted 1 June, 2021;
originally announced June 2021.
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Doubly-charged silicon vacancy center, photochromism, and Si-N complexes in co-doped diamond
Authors:
B G Breeze,
C J Meara,
X X Wu,
C P Michaels,
R Gupta,
P L Diggle,
M W Dale,
B L Cann,
T Ardon,
U F S D'Haenens-Johansson,
I Friel,
M J Rayson,
P R Briddon,
J P Goss,
M E Newton,
B L Green
Abstract:
We report the first experimental observation of a doubly-charged defect in diamond, SiV2-, in silicon and nitrogen co-doped samples. We measure spectroscopic signatures we attribute to substitutional silicon in diamond, and identify a silicon-vacancy complex decorated with a nearest-neighbor nitrogen, SiVN, supported by theoretical calculations. Samples containing silicon and nitrogen are shown to…
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We report the first experimental observation of a doubly-charged defect in diamond, SiV2-, in silicon and nitrogen co-doped samples. We measure spectroscopic signatures we attribute to substitutional silicon in diamond, and identify a silicon-vacancy complex decorated with a nearest-neighbor nitrogen, SiVN, supported by theoretical calculations. Samples containing silicon and nitrogen are shown to be heavily photochromic, with the dominant visible changes due to the loss of SiV0/- and gain in the optically-inactive SiV2-.
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Submitted 5 February, 2020;
originally announced February 2020.