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$Z_{2}$ order fractionalization, topological phase transition, and odd frequency pairing in an exactly solvable spin-charge ladder
Authors:
Jian-Jian Miao,
Wei-Qiang Chen
Abstract:
Motivated by the order fractionalization in Kitaev-Kondo model, we propose an exactly solvable spin-charge ladder model to study the order fractionalization with discrete symmetry. The spin-charge ladder is composed of a spin chain and a superconducting wire coupled via an Ising-type interaction, and we obtain the exact solution in the flat band limit. The exact solution reveals the $Z_{2}$ order…
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Motivated by the order fractionalization in Kitaev-Kondo model, we propose an exactly solvable spin-charge ladder model to study the order fractionalization with discrete symmetry. The spin-charge ladder is composed of a spin chain and a superconducting wire coupled via an Ising-type interaction, and we obtain the exact solution in the flat band limit. The exact solution reveals the $Z_{2}$ order fractionalization with dual symmetry breaking and intertwined order parameters. We investigate the topological phase transition of the spin-charge ladder via the spectral chiral index, and identify the correlated topological superconductor (TSC*) phase with gapped $Z_{2}$ Kondo flux excitations. We demonstrate Majorana spinons generated odd frequency pairing in the superconducting wire. We also discuss the order fractionalization in the perspective of $Z_{2}$ lattice gauge theory.
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Submitted 14 May, 2024;
originally announced May 2024.
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Ultralarge polarization in ferroelectric hafnia-based thin films
Authors:
Han Wu,
Kun Lin,
Qinghua Zhang,
Qian Yu,
Xiaoqian Fu,
Qiang Li,
Meera Cheviri,
Oswaldo Dieguez,
Shuai Xu,
Lin Gu,
Yili Cao,
Jiaou Wang,
Zhen Wang,
Yu Chen,
Huanhua Wang,
**xia Deng,
Jun Miao,
Xianran Xing
Abstract:
Hafnia-based ferroelectrics have become a valuable class of electronic functional materials at the nanoscale, showing great potential for next-generation memory and logic devices. However, more robust ferroelectric properties and better understanding of the polarization mechanisms are currently needed both in technology and science. Herein, we report the properties of oxygen-deficient Hf0.5Zr0.5O2…
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Hafnia-based ferroelectrics have become a valuable class of electronic functional materials at the nanoscale, showing great potential for next-generation memory and logic devices. However, more robust ferroelectric properties and better understanding of the polarization mechanisms are currently needed both in technology and science. Herein, we report the properties of oxygen-deficient Hf0.5Zr0.5O2 films with ultralarge remanent polarization (Pr) of 387 uC cm-2 at room temperature (1 kHz). Structure characterizations identify a new ferroelectric monoclinic Pc phase in these Hf0.5Zr0.5O2 films. The in-situ STEM measurements evidence polar displacements of the oxygen atoms, which move up and down in the Pc structure under applied DC bias fields, showing a huge displacement (1.6 A). DFT calculations optimized the Pc structure and also predicted a large polarization. The coexistence of the ferroelectric monoclinic (Pc) phases and orthorhombic (Pca21) is responsible for this superior ferroelectric properties. These findings are promising for hafnia-based ferroelectric applications in integrated ferroelectric devices, energy harvesting and actuators, etc.
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Submitted 18 March, 2024;
originally announced March 2024.
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Visualizing Magnetic Order in Self-Assembly of Superparamagnetic Nanoparticles
Authors:
Xingyuan Lu,
Ji Zou,
Minh Pham,
Arjun Rana,
Chen-Ting Liao,
Emma Cating Subramanian,
Xuefei Wu,
Yuan Hung Lo,
Charles S. Bevis,
Robert M. Karl Jr,
Serban Lepadatu,
Young-Sang Yu,
Yaroslav Tserkovnyak,
Thomas P. Russell,
David A. Shapiro,
Henry C. Kapteyn,
Margaret M. Murnane,
Robert Streubel,
Jianwei Miao
Abstract:
We use soft x-ray vector-ptychographic tomography to determine the three-dimensional magnetization field in superparamagnetic nanoparticles self-assembled at the liquid-liquid interface and reveal the magnetic order induced by layered structure. The spins in individual nanoparticles become more aligned with increasing number of layers, resulting in a larger net magnetization. Our experimental resu…
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We use soft x-ray vector-ptychographic tomography to determine the three-dimensional magnetization field in superparamagnetic nanoparticles self-assembled at the liquid-liquid interface and reveal the magnetic order induced by layered structure. The spins in individual nanoparticles become more aligned with increasing number of layers, resulting in a larger net magnetization. Our experimental results show a magnetic short-range order in the monolayer due to the proliferation of thermally induced magnetic vortices and a magnetic long-range order in the bilayer and trilayer, stemming from the strengthened dipolar interactions that effectively suppress thermal fluctuations. We also observe a screening effect of magnetic vortices and the attractive interaction between the magnetic vortices with opposite topological charges. Our work demonstrates the crucial role of layered structure in sha** the magnetization of nanoparticle assemblies, providing new opportunities to modulate these properties through strategic layer engineering.
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Submitted 2 January, 2024;
originally announced January 2024.
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Extended defects-enhanced oxygen diffusion in ThO2
Authors:
Miaomiao **,
Jilang Miao,
Beihan Chen,
Marat Khafizov,
Yongfeng Zhang,
David H. Hurley
Abstract:
Oxygen self-diffusion is key to understanding stoichiometry and defect structures in oxide nuclear fuels. Experimentally, low activation-barrier oxygen migration was found in ThO$_2$, a candidate nuclear fuel, possibly due to short-circuit diffusion mechanisms. Here, we perform extensive molecular dynamics simulations to show that various types of extended defects can enhance oxygen self-diffusion…
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Oxygen self-diffusion is key to understanding stoichiometry and defect structures in oxide nuclear fuels. Experimentally, low activation-barrier oxygen migration was found in ThO$_2$, a candidate nuclear fuel, possibly due to short-circuit diffusion mechanisms. Here, we perform extensive molecular dynamics simulations to show that various types of extended defects can enhance oxygen self-diffusion with a much-reduced activation barrier in ThO$_2$. In this work, we consider extended defects including 1D (dislocation), 2D (grain boundary), and 3D (void) defects. Due to the distinct characteristics of each type of extended defect, the modulation of oxygen diffusion varies. These results provide a quantitative description of oxygen transport, which is significantly enhanced within a close distance (nanometer scale) from the extended defects. Among all these defects, grain boundary, particularly the $Σ3$ twin boundary with a low formation energy, exhibits the strongest effect on increasing oxygen transport.
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Submitted 18 September, 2023;
originally announced September 2023.
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Three-dimensional imaging of buried heterointerfaces
Authors:
Colum M. O'Leary,
Haozhi Sha,
Jianhua Zhang,
Cong Su,
Salman Kahn,
Huaidong Jiang,
Alex Zettl,
Jim Ciston,
Jianwei Miao
Abstract:
We report three-dimensional (3D) structure determination of a twisted hexagonal boron nitride (h-BN) heterointerface from a single-view data set using multislice ptychography. We identify the buried heterointerface between two twisted h-BN flakes with a lateral resolution of 0.57 Å and a depth resolution of 2.5 nm. The latter is a significant improvement (~2.7 times) over the aperture-limited dept…
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We report three-dimensional (3D) structure determination of a twisted hexagonal boron nitride (h-BN) heterointerface from a single-view data set using multislice ptychography. We identify the buried heterointerface between two twisted h-BN flakes with a lateral resolution of 0.57 Å and a depth resolution of 2.5 nm. The latter is a significant improvement (~2.7 times) over the aperture-limited depth resolution of incoherent imaging modes such as annular-dark-field scanning transmission electron microscopy. This is attributed to the diffraction signal extending beyond the aperture edge with the depth resolution set by the curvature of the Ewald sphere. Future advances to this approach could improve the depth resolution to the sub-nanometer level and enable the identification of individual dopants, defects and color centers in twisted heterointerfaces and other materials.
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Submitted 18 May, 2024; v1 submitted 29 August, 2023;
originally announced August 2023.
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Bioinspired multi-asymmetric magnetized surfaces for tailoring energy-free liquid manipulation and 3-DOF solid transportation
Authors:
Jiaqi Miao
Abstract:
Through the utilization of smart materials and well-designed structures, functional surfaces have been developed to enable small-scale liquid/solid manipulation tasks, thereby facilitating crucial applications in the fields of microfluidics, soft robotics, and biomedical engineering. However, the design of functional systems with flexible, tunable, and multimodal liquid/solid manipulation capabili…
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Through the utilization of smart materials and well-designed structures, functional surfaces have been developed to enable small-scale liquid/solid manipulation tasks, thereby facilitating crucial applications in the fields of microfluidics, soft robotics, and biomedical engineering. However, the design of functional systems with flexible, tunable, and multimodal liquid/solid manipulation capabilities remains a challenging endeavor. Here, inspired by asymmetric structural features in natural plants and metachrony in cross-scale biological systems, I report a magnetic-responsive functional surface that can achieve rich liquid operations under static magnetic fields, while also enabling the transportation of solids with multiple degrees of freedom (DOFs) under dynamic magnetic fields. The presence of curvature pillars on the surface, combined with their magnetic-driven tilt/gradient arrangement, imparts liquids with multi-directional spreading modes based on the asymmetry of Laplace pressure. I elucidate the mechanisms governing these liquid spreading modes and subsequently develop compelling liquid operations, such as adjustable anti-gravity climbing, spontaneous modal shifts in liquid transport, and liquid mixing. Furthermore, the dynamic metachronal motion of the magnetic pillars can be harnessed for solid object transportation. I illustrate the synchronous/asynchronous transport modes of the surface and propose a novel strategy for achieving 3-DOF solid transportation by coordinating the arrangement of objects and employing magnetic actuation strategies. This study presents a new design concept for application-oriented manipulation surfaces, which hold significant potential for extensive engineering applications.
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Submitted 6 April, 2024; v1 submitted 31 July, 2023;
originally announced July 2023.
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Computational Microscopy beyond Perfect Lenses
Authors:
Xingyuan Lu,
Minh Pham,
Elisa Negrini,
Damek Davis,
Stanley J. Osher,
Jianwei Miao
Abstract:
We demonstrate that in situ coherent diffractive imaging (CDI), which harnesses the coherent interference between a strong and a weak beam illuminating a static and dynamic structure, can be a very dose-efficient imaging method. At low doses, in situ CDI can achieve higher resolution than perfect lenses with the point spread function as a delta function. Both our numerical simulation and experimen…
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We demonstrate that in situ coherent diffractive imaging (CDI), which harnesses the coherent interference between a strong and a weak beam illuminating a static and dynamic structure, can be a very dose-efficient imaging method. At low doses, in situ CDI can achieve higher resolution than perfect lenses with the point spread function as a delta function. Both our numerical simulation and experimental results show that the combination of in situ CDI and ptychography can reduce the dose by two orders of magnitude over ptychography. We expect that computational microscopy based on in situ CDI can be implemented in different imaging modalities with photons and electrons for low-dose imaging of radiation-sensitive materials and biological samples.
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Submitted 3 May, 2024; v1 submitted 20 June, 2023;
originally announced June 2023.
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Design, Actuation, and Functionalization of Untethered Soft Magnetic Robots with Life-Like Motions: A Review
Authors:
Jiaqi Miao,
Siqi Sun
Abstract:
Soft robots have demonstrated superior flexibility and functionality than conventional rigid robots. These versatile devices can respond to a wide range of external stimuli (including light, magnetic field, heat, electric field, etc.), and can perform sophisticated tasks. Notably, soft magnetic robots exhibit unparalleled advantages over numerous soft robots (such as untethered control, rapid resp…
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Soft robots have demonstrated superior flexibility and functionality than conventional rigid robots. These versatile devices can respond to a wide range of external stimuli (including light, magnetic field, heat, electric field, etc.), and can perform sophisticated tasks. Notably, soft magnetic robots exhibit unparalleled advantages over numerous soft robots (such as untethered control, rapid response, and high safety), and have made remarkable progress in small-scale manipulation tasks and biomedical applications. Despite the promising potential, soft magnetic robots are still in their infancy and require significant advancements in terms of fabrication, design principles, and functional development to be viable for real-world applications. Recent progress shows that bionics can serve as an effective tool for develo** soft robots. In light of this, the review is presented with two main goals: (i) exploring how innovative bioinspired strategies can revolutionize the design and actuation of soft magnetic robots to realize various life-like motions; (ii) examining how these bionic systems could benefit practical applications in small-scale solid/liquid manipulation and therapeutic/diagnostic-related biomedical fields.
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Submitted 21 January, 2024; v1 submitted 28 May, 2023;
originally announced May 2023.
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Three-dimensional atomic positions and local chemical order of medium- and high-entropy alloys
Authors:
Saman Moniri,
Yao Yang,
Yakun Yuan,
Jihan Zhou,
Long Yang,
Fan Zhu,
Yuxuan Liao,
Yonggang Yao,
Liangbing Hu,
Peter Ercius,
Jun Ding,
Jianwei Miao
Abstract:
Medium- and high-entropy alloys (M/HEAs) mix multiple principal elements with near-equiatomic composition and represent a paradigm-shift strategy for designing new materials for metallurgy, catalysis, and other fields. One of the core hypotheses of M/HEAs is lattice distortion. However, experimentally determining the 3D local lattice distortion in M/HEAs remains a challenge. Additionally, the pres…
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Medium- and high-entropy alloys (M/HEAs) mix multiple principal elements with near-equiatomic composition and represent a paradigm-shift strategy for designing new materials for metallurgy, catalysis, and other fields. One of the core hypotheses of M/HEAs is lattice distortion. However, experimentally determining the 3D local lattice distortion in M/HEAs remains a challenge. Additionally, the presumed random elemental mixing in M/HEAs has been questioned by atomistic simulations, energy dispersive x-ray spectroscopy (EDS), and electron diffraction, which suggest the existence of local chemical order in M/HEAs. However, the 3D local chemical order has eluded direct experimental observation since the EDS elemental maps integrate the composition of atomic columns along the zone axes, and the diffuse reflections/streaks in electron diffraction of M/HEAs may originate from planar defects. Here, we determine the 3D atomic positions of M/HEA nanocrystals using atomic electron tomography, and quantitatively characterize the local lattice distortion, strain tensor, twin boundaries, dislocation cores, and chemical short-range order (CSRO) with unprecedented 3D detail. We find that the local lattice distortion and strain tensor in the HEAs are larger and more heterogeneous than in the MEAs. We observe CSRO-mediated twinning in the MEAs. that is, twinning occurs in energetically unfavoured CSRO regions but not in energetically favoured CSRO ones. This observation confirms the atomistic simulation results of the bulk CrCoNi MEA and represents the first experimental evidence of correlating local chemical order with structural defects in any material system. We expect that this work will not only expand our fundamental understanding of this important class of materials, but also could provide the foundation for tailoring M/HEA properties through lattice distortion and local chemical order.
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Submitted 23 May, 2023;
originally announced May 2023.
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Unfaulting mechanisms of Frank loops in fluorite oxides
Authors:
Miaomiao **,
Jilang Miao,
Yongfeng Zhang,
Marat Khafizov,
Kaustubh K. Bawane,
Boopathy Kombaiah,
David H. Hurley
Abstract:
Unfaulting of Frank loops in irradiated fluoride oxides are of significance to microstructural evolution. However, the mechanisms have not been directly observed. To this end, we utilize molecular dynamics to reveal the atomistic details related to the unfaulting process of interstitial Frank loop in ThO$_2$, which involve nucleation of single or multiple Shockley partial pairs at the loop circumf…
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Unfaulting of Frank loops in irradiated fluoride oxides are of significance to microstructural evolution. However, the mechanisms have not been directly observed. To this end, we utilize molecular dynamics to reveal the atomistic details related to the unfaulting process of interstitial Frank loop in ThO$_2$, which involve nucleation of single or multiple Shockley partial pairs at the loop circumference. The unfaulting is achieved via a synchronous shear of the partial pairs to remove the extrinsic stacking fault in the cation sublattice and the intrinsic stacking fault in the anion sublattice. The strong oxygen motion at the dislocation core may reduce the activation barriers of dislocation nucleation and migration. These findings provide a fundamental understanding of the transformation of faulted loops in irradiated ThO$_2$, and could be transferable to other fluorite systems.
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Submitted 18 May, 2023;
originally announced May 2023.
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Spin-charge separation and unconventional superconductivity in \textit{t}-\textit{J} model on honeycomb lattice
Authors:
Jian-Jian Miao,
Zheng-Yuan Yue,
Hao Zhang,
Wei-Qiang Chen,
Zheng-Cheng Gu
Abstract:
The physical nature of doped Mott-insulator has been intensively studied for more than three decades. It is well known that the single band Hubbard model or $t$-$J$ model on the bipartite lattice is the simplest model to describe a doped Mott insulator. Unfortunately, the key mechanism of superconductivity in these toy models is still under debate. In this paper, we propose a new mechanism for the…
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The physical nature of doped Mott-insulator has been intensively studied for more than three decades. It is well known that the single band Hubbard model or $t$-$J$ model on the bipartite lattice is the simplest model to describe a doped Mott insulator. Unfortunately, the key mechanism of superconductivity in these toy models is still under debate. In this paper, we propose a new mechanism for the $d+id$-wave superconductivity (SC) that occurs in the small-do** region of the honeycomb lattice $t$-$J$ model based on the Grassmann tensor product state numerical simulation and spin-charge separation formulation. Moreover, in the presence of anti-ferromagnetic order, a continuum effective field theory for holons is developed near half-filling. It reveals the competition between repulsive and attractive holon interactions induced by spinon fluctuations and gauge fluctuations, respectively. At a large value of $t/J$, the repulsive interaction dominates, leading to the non-Fermi liquid like behavior; while in a moderate range of $t/J$, the attractive interaction dominates, leading to the SC order. Possible experimental detection of spin-charge separation phenomena is also discussed.
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Submitted 5 January, 2023;
originally announced January 2023.
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Lacing topological orders in two dimensions: exactly solvable models for Kitaev's sixteen-fold way
Authors:
**-Tao **,
Jian-Jian Miao,
Yi Zhou
Abstract:
A family of two-dimensional (2D) spin-1/2 models have been constructed to realize Kitaev's sixteen-fold way of anyon theories. Defining a one-dimensional (1D) path through all the lattice sites, and performing the Jordan-Wigner transformation with the help of the 1D path, we find that such a spin-1/2 model is equivalent to a model with $ν$ species of Majorana fermions coupled to a static…
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A family of two-dimensional (2D) spin-1/2 models have been constructed to realize Kitaev's sixteen-fold way of anyon theories. Defining a one-dimensional (1D) path through all the lattice sites, and performing the Jordan-Wigner transformation with the help of the 1D path, we find that such a spin-1/2 model is equivalent to a model with $ν$ species of Majorana fermions coupled to a static $\mathbb{Z}_2$ gauge field. Here each specie of Majorana fermions gives rise to an energy band that carries a Chern number $\mathcal{C}=1$, yielding a total Chern number $\mathcal{C}=ν$. It has been shown that the ground states are three (four)-fold topologically degenerate on a torus, when $ν$ is an odd (even) number. These exactly solvable models can be achieved by quantum simulations.
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Submitted 1 May, 2023; v1 submitted 19 September, 2022;
originally announced September 2022.
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Majorana lattice gauge theory: symmetry breaking, topological order and intertwined orders all in one
Authors:
Jian-Jian Miao
Abstract:
The Majorana lattice gauge theory purely composed of Majorana fermions on square lattice is studied throughly. The ground state is obtained exactly and exhibits the coexistence of symmetry breaking and topological order. The $Z_2$ symmetry breaking of matter fields leads to the intertwined antiferromagnetic spin order and $η$-pairing order. The topological order is reflected in the $Z_2$ quantum s…
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The Majorana lattice gauge theory purely composed of Majorana fermions on square lattice is studied throughly. The ground state is obtained exactly and exhibits the coexistence of symmetry breaking and topological order. The $Z_2$ symmetry breaking of matter fields leads to the intertwined antiferromagnetic spin order and $η$-pairing order. The topological order is reflected in the $Z_2$ quantum spin liquid ground state of gauge fields. The Majorana lattice gauge theory, alternatively can be viewed as interacting Majorana fermion model, is possibly realized on a Majorana-zero-mode lattice.
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Submitted 13 January, 2023; v1 submitted 18 July, 2022;
originally announced July 2022.
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Large non-reciprocal charge transport in Pt2MnGe up to room temperature
Authors:
K. K. Meng,
K. Wang,
N. N. Zhang,
Z. G. Fu,
J. K. Chen,
Y. Wu,
X. G. Xu,
J. Miao,
Y. Jiang
Abstract:
Non-reciprocal charge transport that is strongly associated with the structural or magnetic chirality of the quantum materials system is one of the most exotic properties of condensed matter physics. Here, using magnetic alloys film Pt2MnGe, we have realized the large non-reciprocal charge transport up to room temperature, which roots in the organic combination of chirality dependent carrier scatt…
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Non-reciprocal charge transport that is strongly associated with the structural or magnetic chirality of the quantum materials system is one of the most exotic properties of condensed matter physics. Here, using magnetic alloys film Pt2MnGe, we have realized the large non-reciprocal charge transport up to room temperature, which roots in the organic combination of chirality dependent carrier scattering and special magnetic configurations. In this framework, the conduction electrons are scattered asymmetrically by the emerging non-zero vector spin chirality under in-plane magnetic field, resulting in robust non-reciprocal response. More astonishingly, the vector spin chirality in Pt2MnGe film can be reversed by a spin-polarized current through spin Hall effect in a junction with Pt layer. Our work resolves the general limitation of non-reciprocal charge transport to cryogenic temperatures, and paves the way for extending its applications in the emerging field of chiral spintronics.
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Submitted 16 June, 2022;
originally announced June 2022.
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Collective effects in an incompressible electronic liquid
Authors:
Jian-Jian Miao,
Hui-Ke **,
Yi Zhou
Abstract:
Starting from the Landau's kinetic equation, we show that an electronic liquid in $d=2,3$ dimensions depicted by a Landau type effective theory will become incompressible on condition that the Landau parameters satisfy either (i) $1+F_{1}^{s}/d=0$ or (ii) $F_{0}^{s}\to{}+\infty$. The condition (i) is the Pomeranchuk instability in the current channel and suggests a quantum spin liquid (QSL) state…
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Starting from the Landau's kinetic equation, we show that an electronic liquid in $d=2,3$ dimensions depicted by a Landau type effective theory will become incompressible on condition that the Landau parameters satisfy either (i) $1+F_{1}^{s}/d=0$ or (ii) $F_{0}^{s}\to{}+\infty$. The condition (i) is the Pomeranchuk instability in the current channel and suggests a quantum spin liquid (QSL) state with a spinon Fermi surface; while the condition (ii) means that the strong repulsion in the charge channel and leads to a conventional charge and thermal insulator. In the collisionless regime ($ωτ\gg{}1$) and the hydrodynamic regime ($ωτ\ll{}1$), the zero and first sound modes have been studied and classified by symmetries, including the longitudinal and transverse modes in $d=2,3$ and the higher angular momentum modes in $d=3$. The sufficient (and/or necessary) conditions of these collective modes have been revealed. It has been demonstrated that some of these collective modes will behave in quite different manners under two incompressibility conditions (i) or (ii). Possible nematic QSL states and a hierarchy structure for gapless QSL states have been proposed in $d=3$.
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Submitted 30 May, 2022;
originally announced May 2022.
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Dimensionality-controlled evolution of charge-transfer energy in digital nickelates superlattices
Authors:
Xiangle Lu,
Jishan Liu,
Nian Zhang,
Shuai Yang,
Wanling Liu,
Zhicheng Jiang,
Zhe Huang,
Yichen Yang,
** Miao,
Wei Li,
Soohyun Cho,
Zhengtai Liu,
Zhonghao Liu,
Dawei Shen
Abstract:
Fundamental understanding and control of the electronic structure evolution in rare-earth nickelates is a fascinating and meaningful issue, as well as being helpful to understand the mechanism of recently discovered superconductivity. Here we systematically study the dimensionality effect on the ground electronic state in high-quality (NdNiO3)m/(SrTiO3)1 superlattices through transport and soft x-…
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Fundamental understanding and control of the electronic structure evolution in rare-earth nickelates is a fascinating and meaningful issue, as well as being helpful to understand the mechanism of recently discovered superconductivity. Here we systematically study the dimensionality effect on the ground electronic state in high-quality (NdNiO3)m/(SrTiO3)1 superlattices through transport and soft x-ray absorption spectroscopy. The metal-to-insulator transition temperature decreases with the thickness of the NdNiO3 slab decreasing from bulk to 7 unit cells, then increases gradually as m further reduces to 1 unit cell. Spectral evidence demonstrates that the stabilization of insulating phase can be attributed to the increase of the charge-transfer energy between O 2p and Ni 3d bands. The prominent multiplet feature on the Ni L3 edge develops with the decrease of NdNiO3 slab thickness, suggesting the strengthening of the charge disproportionate state under the dimensional confinement. Our work provides convincing evidence that dimensionality is an effective knob to modulate the charge-transfer energy and thus the collective ground state in nickelates.
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Submitted 30 April, 2022;
originally announced May 2022.
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Deep Learning Coherent Diffractive Imaging
Authors:
Dillan J. Chang,
Colum M. O'Leary,
Cong Su,
Salman Kahn,
Alex Zettl,
Jim Ciston,
Peter Ercius,
Jianwei Miao
Abstract:
We report the development of deep learning coherent electron diffractive imaging at sub-angstrom resolution using convolutional neural networks (CNNs) trained with only simulated data. We experimentally demonstrate this method by applying the trained CNNs to directly recover the phase images from electron diffraction patterns of twisted hexagonal boron nitride, monolayer graphene and a Au nanopart…
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We report the development of deep learning coherent electron diffractive imaging at sub-angstrom resolution using convolutional neural networks (CNNs) trained with only simulated data. We experimentally demonstrate this method by applying the trained CNNs to directly recover the phase images from electron diffraction patterns of twisted hexagonal boron nitride, monolayer graphene and a Au nanoparticle with comparable quality to those reconstructed by a conventional ptychographic method. Fourier ring correlation between the CNN and ptychographic images indicates the achievement of a spatial resolution in the range of 0.70 and 0.55 angstrom (depending on different resolution criteria). The ability to replace iterative algorithms with CNNs and perform real-time imaging from coherent diffraction patterns is expected to find broad applications in the physical and biological sciences.
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Submitted 18 April, 2022;
originally announced April 2022.
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Atomic-scale identification of the active sites of nanocatalysts
Authors:
Yao Yang,
Jihan Zhou,
Zipeng Zhao,
Geng Sun,
Saman Moniri,
Colin Ophus,
Yongsoo Yang,
Ziyang Wei,
Yakun Yuan,
Cheng Zhu,
Qiang Sun,
Qingying Jia,
Hendrik Heinz,
Jim Ciston,
Peter Ercius,
Philippe Sautet,
Yu Huang,
Jianwei Miao
Abstract:
Alloy nanocatalysts have found broad applications ranging from fuel cells to catalytic converters and hydrogenation reactions. Despite extensive studies, identifying the active sites of nanocatalysts remains a major challenge due to the heterogeneity of the local atomic environment. Here, we advance atomic electron tomography to determine the 3D local atomic structure, surface morphology and chemi…
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Alloy nanocatalysts have found broad applications ranging from fuel cells to catalytic converters and hydrogenation reactions. Despite extensive studies, identifying the active sites of nanocatalysts remains a major challenge due to the heterogeneity of the local atomic environment. Here, we advance atomic electron tomography to determine the 3D local atomic structure, surface morphology and chemical composition of PtNi and Mo-doped PtNi nanocatalysts. Using machine learning trained by density functional theory calculations, we identify the catalytic active sites for the oxygen reduction reaction from experimental 3D atomic coordinates, which are corroborated by electrochemical measurements. By quantifying the structure-activity relationship, we discover a local environment descriptor to explain and predict the catalytic active sites at the atomic level. The ability to determine the 3D atomic structure and chemical species coupled with machine learning is expected to expand our fundamental understanding of a wide range of nanocatalysts.
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Submitted 18 February, 2022;
originally announced February 2022.
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2D Metal Selenide-Silicon Steep Sub-Threshold Heterojunction Triodes with High On-Current Density
Authors:
**shui Miao,
Chloe Leblanc,
Xiwen Liu,
Baokun Song,
Huairuo Zhang,
Sergiy Krylyuk,
Albert V. Davydov,
Tyson Back,
Nicholas Glavin,
Deep Jariwala
Abstract:
Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit steep sub-threshold slope (SS) transfer characteristics are an attractive option in this regard. However, current generation of Si and III-V heterojunction base…
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Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit steep sub-threshold slope (SS) transfer characteristics are an attractive option in this regard. However, current generation of Si and III-V heterojunction based TFETs while suffer from low ON current density and ON/OFF current ratios for < 60 mV/dec operation. Semiconducting two-dimensional (2D) layers have recently renewed enthusiasm in novel device design for TFETs not only because of their atomically-thin bodies that favor superior electrostatic control but the same feature also favors higher ON current density and consequently high ON/OFF ratio. Here, we demonstrate gate-tunable heterojunction diodes (triodes) fabricated from InSe/Si 2D/3D van der Waals heterostructures, with a minimum subthreshold swing (SS) as low as 6.4 mV/dec and an SS average of 30 mV/dec over 4 decades of current. Further, the devices show a large current on/off ratio of approximately 10^6 and on-state current density of 0.3 uA/um at a drain bias of -1V. Our work opens new avenues for 2D semiconductors for 3D hetero-integration with Si to achieve ultra-low power logic devices.
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Submitted 11 November, 2021;
originally announced November 2021.
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Direct observation of 3D topological spin textures and their interactions using soft x-ray vector ptychography
Authors:
Arjun Rana,
Chen-Ting Liao,
Ezio Iacocca,
Ji Zou,
Minh Pham,
Emma-Elizabeth Cating Subramanian,
Yuan Hung Lo,
Sinéad A. Ryan,
Xingyuan Lu,
Charles S. Bevis,
Robert M. Karl Jr,
Andrew J. Glaid,
Young-Sang Yu,
Pratibha Mahale,
David A. Shapiro,
Sadegh Yazdi,
Thomas E. Mallouk,
Stanley J. Osher,
Henry C. Kapteyn,
Vincent H. Crespi,
John V. Badding,
Yaroslav Tserkovnyak,
Margaret M. Murnane,
Jianwei Miao
Abstract:
Magnetic topological defects are energetically stable spin configurations characterized by symmetry breaking. Vortices and skyrmions are two well-known examples of 2D spin textures that have been actively studied for both fundamental interest and practical applications. However, experimental evidence of the 3D spin textures has been largely indirect or qualitative to date, due to the difficulty of…
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Magnetic topological defects are energetically stable spin configurations characterized by symmetry breaking. Vortices and skyrmions are two well-known examples of 2D spin textures that have been actively studied for both fundamental interest and practical applications. However, experimental evidence of the 3D spin textures has been largely indirect or qualitative to date, due to the difficulty of quantitively characterizing them within nanoscale volumes. Here, we develop soft x-ray vector ptychography to quantitatively image the 3D magnetization vector field in a frustrated superlattice with 10 nm spatial resolution. By applying homotopy theory to the experimental data, we quantify the topological charge of hedgehogs and anti-hedgehogs as emergent magnetic monopoles and probe their interactions inside the frustrated superlattice. We also directly observe virtual hedgehogs and anti-hedgehogs created by magnetically inert voids. We expect that this new quantitative imaging method will open the door to study 3D topological spin textures in a broad class of magnetic materials. Our work also demonstrates that magnetically frustrated superlattices could be used as a new platform to investigate hedgehog interactions and dynamics and to exploit optimized geometries for information storage and transport applications.
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Submitted 26 April, 2021;
originally announced April 2021.
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Magnetic coupling in Y$_3$Fe$_5$O$_{12}$/Gd$_3$Fe$_5$O$_{12}$ heterostructures
Authors:
Sven Becker,
Zengyao Ren,
Felix Fuhrmann,
Andrew Ross,
Sally Lord,
Shilei Ding,
Rui Wu,
**bo Yang,
Jun Miao,
Mathias Kläui,
Gerhard Jakob
Abstract:
Ferrimagnetic Y$_3$Fe$_5$O$_{12}$ (YIG) is the prototypical material for studying magnonic properties due to its exceptionally low dam**. By substituting the yttrium with other rare earth elements that have a net magnetic moment, we can introduce an additional spin degree of freedom. Here, we study the magnetic coupling in epitaxial Y$_3$Fe$_5$O$_{12}$/Gd$_3$Fe$_5$O$_{12}$ (YIG/GIG) heterostruct…
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Ferrimagnetic Y$_3$Fe$_5$O$_{12}$ (YIG) is the prototypical material for studying magnonic properties due to its exceptionally low dam**. By substituting the yttrium with other rare earth elements that have a net magnetic moment, we can introduce an additional spin degree of freedom. Here, we study the magnetic coupling in epitaxial Y$_3$Fe$_5$O$_{12}$/Gd$_3$Fe$_5$O$_{12}$ (YIG/GIG) heterostructures grown by pulsed laser deposition. From bulk sensitive magnetometry and surface sensitive spin Seebeck effect (SSE) and spin Hall magnetoresistance (SMR) measurements, we determine the alignment of the heterostructure magnetization through temperature and external magnetic field. The ferromagnetic coupling between the Fe sublattices of YIG and GIG dominates the overall behavior of the heterostructures. Due to the temperature dependent gadolinium moment, a magnetic compensation point of the total bilayer system can be identified. This compensation point shifts to lower temperatures with increasing thickness of YIG due the parallel alignment of the iron moments. We show that we can control the magnetic properties of the heterostructures by tuning the thickness of the individual layers, opening up a large playground for magnonic devices based on coupled magnetic insulators. These devices could potentially control the magnon transport analogously to electron transport in giant magnetoresistive devices.
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Submitted 19 April, 2021;
originally announced April 2021.
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Capturing 3D atomic defects and phonon localization at the 2D heterostructure interface
Authors:
Xuezeng Tian,
Xingxu Yan,
Georgios Varnavides,
Yakun Yuan,
Dennis S. Kim,
Christopher J. Ciccarino,
Polina Anikeeva,
Ming-Yang Li,
Lain-Jong Li,
Prineha Narang,
Xiaoqing Pan,
Jianwei Miao
Abstract:
The 3D local atomic structures and crystal defects at the interfaces of heterostructures control their electronic, magnetic, optical, catalytic and topological quantum properties, but have thus far eluded any direct experimental determination. Here we determine the 3D local atomic positions at the interface of a MoS2-WSe2 heterojunction with picometer precision and correlate 3D atomic defects with…
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The 3D local atomic structures and crystal defects at the interfaces of heterostructures control their electronic, magnetic, optical, catalytic and topological quantum properties, but have thus far eluded any direct experimental determination. Here we determine the 3D local atomic positions at the interface of a MoS2-WSe2 heterojunction with picometer precision and correlate 3D atomic defects with localized vibrational properties at the epitaxial interface. We observe point defects, bond distortion, atomic-scale ripples and measure the full 3D strain tensor at the heterointerface. By using the experimental 3D atomic coordinates as direct input to first principles calculations, we reveal new phonon modes localized at the interface, which are corroborated by spatially resolved electron energy-loss spectroscopy. We expect that this work will open the door to correlate structure-property relationships of a wide range of heterostructure interfaces at the single-atom level.
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Submitted 18 April, 2021;
originally announced April 2021.
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Decoupling bulk and surface recombination properties in silicon by depth-dependent carrier lifetime measurements
Authors:
K. Yokoyama,
J. S. Lord,
J. Miao,
P. Murahari,
A. J. Drew
Abstract:
Muons, as a bulk probe of materials, have been used to study the depth profile of charge carrier kinetics in Si wafers by scanning the muon implantation depth. The photoexcited muon spin spectroscopy technique can optically generate excess carriers in semiconductor wafers, while muons can measure the excess carrier density. As a result, carrier recombination lifetime spectra can be obtained. The d…
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Muons, as a bulk probe of materials, have been used to study the depth profile of charge carrier kinetics in Si wafers by scanning the muon implantation depth. The photoexcited muon spin spectroscopy technique can optically generate excess carriers in semiconductor wafers, while muons can measure the excess carrier density. As a result, carrier recombination lifetime spectra can be obtained. The depth-dependent lifetime spectra enable us to accurately measure the bulk carrier lifetime and surface recombination velocity by fitting the spectra to a simple 1-dimensional diffusion model. Unlike other traditional lifetime spectroscopy techniques, the bulk and surface recombination properties can be readily de-convoluted in this method. Here, we have applied the technique to study silicon wafers both with and without passivation treatment, and have demonstrated that the model can correctly describe the carrier kinetics in these two cases.
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Submitted 8 April, 2021;
originally announced April 2021.
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Revealing the Brønsted-Evans-Polanyi Relation in Halide-Activated Fast MoS2 Growth Towards Millimeter-Sized 2D Crystals
Authors:
Qingqing Ji,
Cong Su,
Nannan Mao,
Xuezeng Tian,
Juan-Carlos Idrobo,
Jianwei Miao,
William A. Tisdale,
Alex Zettl,
Ju Li,
**g Kong
Abstract:
Achieving large-size two-dimensional (2D) crystals is key to fully exploiting their remarkable functionalities and application potentials. Chemical vapor deposition (CVD) growth of 2D semiconductors such as monolayer MoS2 has been reported to be activated by halide salts, yet clear identification of the underlying mechanism remains elusive. Here we provide unambiguous experimental evidence showing…
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Achieving large-size two-dimensional (2D) crystals is key to fully exploiting their remarkable functionalities and application potentials. Chemical vapor deposition (CVD) growth of 2D semiconductors such as monolayer MoS2 has been reported to be activated by halide salts, yet clear identification of the underlying mechanism remains elusive. Here we provide unambiguous experimental evidence showing that the MoS2 growth dynamics are halogen-dependent through the Brønsted-Evans-Polanyi relation, based on which we build a growth model by considering MoS2 edge passivation by halogens, and theoretically reproduces the trend of our experimental observations. These mechanistic understandings enable us to further optimize the fast growth of MoS2 and reach record-large domain sizes that should facilitate practical applications.
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Submitted 11 March, 2021;
originally announced March 2021.
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Covalent 2D Cr$_2$Te$_3$ ferromagnet
Authors:
Mengying Bian,
Aleksandr N. Kamenskii,
Mengjiao Han,
Wenjie Li,
Sichen Wei,
Xuezeng Tian,
David B. Eason,
Fan Sun,
Keke He,
Haolei Hui,
Fei Yao,
Renat Sabirianov,
Jonathan P. Bird,
Chunlei Yang,
Jianwei Miao,
Junhao Lin,
Scott A. Crooker,
Yanglong Hou,
Hao Zeng
Abstract:
To broaden the scope of van der Waals 2D magnets, we report the synthesis and magnetism of covalent 2D magnetic Cr$_2$Te$_3$ with a thickness down to one-unit-cell. The 2D Cr$_2$Te$_3$ crystals exhibit robust ferromagnetism with a Curie temperature of 180 K, a large perpendicular anisotropy of 7*105 J m-3, and a high coercivity of ~ 4.6 kG at 20 K. First-principles calculations further show a tran…
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To broaden the scope of van der Waals 2D magnets, we report the synthesis and magnetism of covalent 2D magnetic Cr$_2$Te$_3$ with a thickness down to one-unit-cell. The 2D Cr$_2$Te$_3$ crystals exhibit robust ferromagnetism with a Curie temperature of 180 K, a large perpendicular anisotropy of 7*105 J m-3, and a high coercivity of ~ 4.6 kG at 20 K. First-principles calculations further show a transition from canted to collinear ferromagnetism, a transition from perpendicular to in-plane anisotropy, and emergent half-metallic behavior in atomically-thin Cr$_2$Te$_3$, suggesting its potential application for injecting carriers with high spin polarization into spintronic devices.
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Submitted 27 February, 2021;
originally announced March 2021.
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Direct Opto-Electronic Imaging of 2D Semiconductor - 3D Metal Buried Interfaces
Authors:
Kiyoung Jo,
Pawan Kumar,
Joseph Orr,
Surendra B. Anantharaman,
**shui Miao,
Michael Motala,
Arkamita Bandyopadhyay,
Kim Kisslinger,
Christopher Muratore,
Vivek B. Shenoy,
Eric Stach,
Nicholas Glavin,
Deep Jariwala
Abstract:
The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despite numerous studies concerning contact resistance in 2D semiconductors, the exact nature of the buried interface under a three-dimensional (3D) metal…
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The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despite numerous studies concerning contact resistance in 2D semiconductors, the exact nature of the buried interface under a three-dimensional (3D) metal remains unclear. Herein, we report the direct measurement of electrical and optical responses of 2D semiconductor-metal buried interfaces using a recently developed metal-assisted transfer technique to expose the buried interface which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with < 20 nm resolution. To be specific, potential, conductance and photoluminescence at the buried metal/MoS$_2$ interface are correlated as a function of a variety of metal deposition conditions as well as the type of metal contacts. We observe that direct evaporation of Au on MoS$_2$ induces a large strain of ~5% in the MoS$_2$ which, coupled with charge transfer, leads to degenerate do** of the MoS$_2$ underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kohm-um, as measured using local conductance probes. This approach was adopted to characterize MoS$_2$-In/Au alloy interfaces, demonstrating contact resistance as low as 63 kohm-um. Our results highlight that the MoS$_2$/Metal interface is sensitive to device fabrication methods, and provides a universal strategy to characterize buried contact interfaces involving 2D semiconductors.
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Submitted 28 January, 2021;
originally announced January 2021.
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Interface-driven electrical magnetochiral anisotropy in Pt/PtMnGa bilayers
Authors:
K. K. Meng,
J. K. Chen,
J. Miao,
X. G. Xu,
Y. Jiang
Abstract:
Nonreciprocal charge transport, which is frequently termed as electrical magnetochiral anisotropy (EMCA) in chiral conductors, touches the most important elements of modern condensed matter physics. Here, we have investigated the EMCA in Pt/PtMnGa (PMG) bilayers with the assitance of nonequilibrium fluctuation theorems. Large EMCA in the Pt/PMG bilayers can be attributed to nonreciprocal response…
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Nonreciprocal charge transport, which is frequently termed as electrical magnetochiral anisotropy (EMCA) in chiral conductors, touches the most important elements of modern condensed matter physics. Here, we have investigated the EMCA in Pt/PtMnGa (PMG) bilayers with the assitance of nonequilibrium fluctuation theorems. Large EMCA in the Pt/PMG bilayers can be attributed to nonreciprocal response of an interface-driven chiral transport channel. Due to the presence of large charge fluctuations for small current region, higher order EMCA coefficients should be added and they are all functions of current. A combination of asymmetrical electron scattering and spin-dependent scattering furnish the PMG thickness dependent chiral transport behaviors in Pt/PMG bilayers. The dramatically enhanced anomalous Hall angle of PMG further demonstrates the modified surface state properties by strong spin-orbit coupling.
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Submitted 13 April, 2021; v1 submitted 6 November, 2020;
originally announced November 2020.
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Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor
Authors:
Xiwen Liu,
Dixiong Wang,
Jeffrey Zheng,
Pariasadat Musavigharavi,
**shui Miao,
Eric A. Stach,
Roy H. Olsson III,
Deep Jariwala
Abstract:
In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However, subsequent efforts to produce a practical, compact FE-FET have been plagued by low retention and incompatibility with Complementary Metal Oxide Semiconductor (CMO…
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In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However, subsequent efforts to produce a practical, compact FE-FET have been plagued by low retention and incompatibility with Complementary Metal Oxide Semiconductor (CMOS) process integration. These difficulties led to the development of trapped-charge based memory devices (also called floating gate or flash memory), and these are now the mainstream non-volatile memory (NVM) technology. Over the past two decades, advances in oxide FE materials have rejuvenated the field of ferroelectrics and made FE random access memories (FE-RAM) a commercial reality. Despite these advances, commercial FE-RAM based on lead zirconium titanate (PZT) has stalled at the 130 nm due to process challenges.The recent discovery of scandium doped aluminum nitride (AlScN) as a CMOS compatible ferroelectric presents new opportunities for direct memory integration with logic transistors due to the low temperature of AlScN deposition (approx. 350 C). This temperature is compatible with CMOS back end of line processes. Here, we present a FE-FET device composed of an AlScN FE dielectric layer integrated with a channel layer of a van der Waals two-dimensional (2D) semiconductor, MoS2. Our devices show an ON/OFF ratio ~ 10^6, concurrent with a normalized memory window of 0.3 V/nm. The devices also demonstrate stable, two-state memory retention for up to 10^4 seconds. Our simulations and experimental results suggest that the combination of AlScN and 2D semiconductors is nearly ideal for low power FE-FET memory. These results demonstrate a new approach in embedded memory and in-memory computing, and could even lead to effective neuromorphic computing architectures.
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Submitted 22 October, 2020;
originally announced October 2020.
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X-ray linear dichroic ptychography
Authors:
Yuan Hung Lo,
Jihan Zhou,
Arjun Rana,
Drew Morrill,
Christian Gentry,
Bjoern Enders,
Young-Sang Yu,
Chang-Yu Sun,
David Shapiro,
Roger Falcone,
Henry Kapteyn,
Margaret Murnane,
Pupa U. P. A. Gilbert,
Jianwei Miao
Abstract:
Biominerals such as seashells, corals skeletons, bone, and enamel are optically anisotropic crystalline materials with unique nano- and micro-scale organization that translates into exceptional macroscopic mechanical properties, providing inspiration for engineering new and superior biomimetic structures. Here we use particles of Seriatopora aculeata coral skeleton as a model and demonstrate, for…
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Biominerals such as seashells, corals skeletons, bone, and enamel are optically anisotropic crystalline materials with unique nano- and micro-scale organization that translates into exceptional macroscopic mechanical properties, providing inspiration for engineering new and superior biomimetic structures. Here we use particles of Seriatopora aculeata coral skeleton as a model and demonstrate, for the first time, x-ray linear dichroic ptychography. We map the aragonite (CaCO3) crystal c-axis orientations in coral skeleton with 35 nm spatial resolution. Linear dichroic phase imaging at the O K-edge energy shows strong polarization-dependent contrast and reveals the presence of both narrow (< 35°) and wide (> 35°) c-axis angular spread in sub-micrometer coral particles. These x-ray ptychography results were corroborated using 4D scanning transmission electron nano-diffraction on the same particles. Evidence of co-oriented but disconnected corallite sub-domains indicates jagged crystal boundaries consistent with formation by amorphous nanoparticle attachment. Looking forward, we anticipate that x-ray linear dichroic ptychography can be applied to study nano-crystallites, interfaces, nucleation and mineral growth of optically anisotropic materials with sub-ten nanometers spatial resolution in three dimensions.
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Submitted 2 September, 2020;
originally announced September 2020.
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Intrinsic mechanism for anisotropic magnetoresistance and experimental confirmation in Co$_x$Fe$_{1-x}$ single-crystal films
Authors:
F. L. Zeng,
Z. Y. Ren,
Y. Li,
J. Y. Zeng,
M. W. Jia,
J. Miao,
A. Hoffmann,
W. Zhang,
Y. Z. Wu,
Z. Yuan
Abstract:
Using first-principles transport calculations, we predict that the anisotropic magnetoresistance (AMR) of single-crystal Co$_x$Fe$_{1-x}$ alloys is strongly dependent on the current orientation and alloy concentration. An intrinsic mechanism for AMR is found to arise from the band crossing due to magnetization-dependent symmetry protection. These special $k$-points can be shifted towards or away f…
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Using first-principles transport calculations, we predict that the anisotropic magnetoresistance (AMR) of single-crystal Co$_x$Fe$_{1-x}$ alloys is strongly dependent on the current orientation and alloy concentration. An intrinsic mechanism for AMR is found to arise from the band crossing due to magnetization-dependent symmetry protection. These special $k$-points can be shifted towards or away from the Fermi energy by varying the alloy composition and hence the exchange splitting, thus allowing AMR tunability. The prediction is confirmed by delicate transport measurements, which further reveal a reciprocal relationship of the longitudinal and transverse resistivities along different crystal axes.
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Submitted 3 August, 2020;
originally announced August 2020.
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Crystalline and magnetic structures, magnetization, heat capacity and anisotropic magnetostriction effect in a yttrium-chromium oxide
Authors:
Yinghao Zhu,
Ying Fu,
Bao Tu,
Tao Li,
Jun Miao,
Qian Zhao,
Si Wu,
Junchao Xia,
Pengfei Zhou,
Ashfia Huq,
Wolfgang Schmidt,
Zikang Tang,
Zhubing He,
Hai-Feng Li
Abstract:
We have studied a nearly stoichiometric insulating Y$_{0.97(2)}$Cr$_{0.98(2)}$O$_{3.00(2)}$ single crystal by performing measurements of magnetization, heat capacity, and neutron diffraction. Albeit that the YCrO$_3$ compound behaviors like a soft ferromagnet with a coersive force of $\sim$ 0.05 T, there exist strong antiferromagnetic (AFM) interactions between Cr$^{3+}$ spins due to a strongly ne…
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We have studied a nearly stoichiometric insulating Y$_{0.97(2)}$Cr$_{0.98(2)}$O$_{3.00(2)}$ single crystal by performing measurements of magnetization, heat capacity, and neutron diffraction. Albeit that the YCrO$_3$ compound behaviors like a soft ferromagnet with a coersive force of $\sim$ 0.05 T, there exist strong antiferromagnetic (AFM) interactions between Cr$^{3+}$ spins due to a strongly negative paramagnetic Curie-Weiss temperature, i.e., -433.2(6) K. The coexistence of ferromagnetism and antiferromagnetism may indicate a canted AFM structure. The AFM phase transition occurs at $T_\textrm{N} =$ 141.5(1) K, which increases to $T_\textrm{N}$(5T) = 144.5(1) K at 5 T. Within the accuracy of the present neuron-diffraction studies, we determine a G-type AFM structure with a propagation vector \textbf{k} = (1 1 0) and Cr$^{3+}$ spin directions along the crystallographic \emph{c} axis of the orthorhombic structure with space group \emph{Pnma} below $T_\textrm{N}$. At 12 K, the refined moment size is 2.45(6) $μ_\textrm{B}$, $\sim$ 82\% of the theoretical saturation value 3 $μ_\textrm{B}$. The Cr$^{3+}$ spin interactions are probably two-dimensional Ising like within the reciprocal (1 1 0) scattering plane. Below $T_\textrm{N}$, the lattice configuration (\emph{a}, \emph{b}, \emph{c}, and \emph{V}) deviates largely downward from the Gr$\ddot{\textrm{u}}$neisen law, displaying an anisotropic magnetostriction effect and a magnetoelastic effect. Especially, the sample contraction upon cooling is enhanced below the AFM transition temperature. There is evidence to suggest that the actual crystalline symmetry of YCrO$_3$ compound is probably lower than the currently assumed one. Additionally, we compared the $t_{2\textrm{g}}$ YCrO$_3$ and the $e_\textrm{g}$ La$_{7/8}$Sr$_{1/8}$MnO$_3$ single crystals for a further understanding of the reason for the possible symmetry lowering.
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Submitted 19 September, 2020; v1 submitted 17 July, 2020;
originally announced July 2020.
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Direct observation of 3D atomic packing in monatomic amorphous materials
Authors:
Yakun Yuan,
Dennis S. Kim,
Jihan Zhou,
Dillan J. Chang,
Fan Zhu,
Yasutaka Nagaoka,
Yao Yang,
Minh Pham,
Stanley J. Osher,
Ou Chen,
Peter Ercius,
Andreas K. Schmid,
Jianwei Miao
Abstract:
Liquids and solids are two fundamental states of matter. However, due to the lack of direct experimental determination, our understanding of the 3D atomic structure of liquids and amorphous solids remained speculative. Here we advance atomic electron tomography to determine for the first time the 3D atomic positions in monatomic amorphous materials, including a Ta thin film and two Pd nanoparticle…
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Liquids and solids are two fundamental states of matter. However, due to the lack of direct experimental determination, our understanding of the 3D atomic structure of liquids and amorphous solids remained speculative. Here we advance atomic electron tomography to determine for the first time the 3D atomic positions in monatomic amorphous materials, including a Ta thin film and two Pd nanoparticles. We observe that pentagonal bipyramids are the most abundant atomic motifs in these amorphous materials. Instead of forming icosahedra, the majority of pentagonal bipyramids arrange into networks that extend to medium-range scale. Molecular dynamic simulations further reveal that pentagonal bipyramid networks are prevalent in monatomic amorphous liquids, which rapidly grow in size and form icosahedra during the quench from the liquid state to glass state. The experimental method and results are expected to advance the study of the amorphous-crystalline phase transition and glass transition at the single-atom level.
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Submitted 2 December, 2020; v1 submitted 7 July, 2020;
originally announced July 2020.
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Chemical trends of deep levels in van der Waals semiconductors
Authors:
Penghong Ci,
Xuezeng Tian,
Jun Kang,
Anthony Salazar,
Kazutaka Eriguchi,
Sorren Warkander,
Kechao Tang,
Jiaman Liu,
Yabin Chen,
Sefaattin Tongay,
Wladek Walukiewicz,
Jianwei Miao,
Oscar Dubon,
Junqiao Wu
Abstract:
Properties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no exception: defects exist even in the purest materials and strongly affect their electrical, optical, magnetic, catalytic and sensing properties. However, unlike conventional semiconductors where energy levels of defects…
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Properties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no exception: defects exist even in the purest materials and strongly affect their electrical, optical, magnetic, catalytic and sensing properties. However, unlike conventional semiconductors where energy levels of defects are well documented, they are experimentally unknown in even the best studied vdW semiconductors, impeding the understanding and utilization of these materials. Here, we directly evaluate deep levels and their chemical trends in the bandgap of MoS2, WS2 and their alloys by transient spectroscopic study. One of the deep levels is found to follow the conduction band minimum of each host, attributed to the native sulfur vacancy. A switchable, DX center - like deep level has also been identified, whose energy lines up instead on a fixed level across different hosts, explaining a persistent photoconductivity above 400K.
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Submitted 8 October, 2020; v1 submitted 1 June, 2020;
originally announced June 2020.
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Determining the three-dimensional atomic structure of a metallic glass
Authors:
Yao Yang,
Jihan Zhou,
Fan Zhu,
Yakun Yuan,
Dillan Chang,
Dennis S. Kim,
Minh Pham,
Arjun Rana,
Xuezeng Tian,
Yonggang Yao,
Stanley Osher,
Andreas K. Schmid,
Liangbing Hu,
Peter Ercius,
Jianwei Miao
Abstract:
Amorphous solids such as glass are ubiquitous in our daily life and have found broad applications ranging from window glass and solar cells to telecommunications and transformer cores. However, due to the lack of long-range order, the three-dimensional (3D) atomic structure of amorphous solids have thus far defied any direct experimental determination without model fitting. Here, using a multi-com…
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Amorphous solids such as glass are ubiquitous in our daily life and have found broad applications ranging from window glass and solar cells to telecommunications and transformer cores. However, due to the lack of long-range order, the three-dimensional (3D) atomic structure of amorphous solids have thus far defied any direct experimental determination without model fitting. Here, using a multi-component metallic glass as a proof-of-principle, we advance atomic electron tomography to determine the 3D atomic positions in an amorphous solid for the first time. We quantitatively characterize the short-range order (SRO) and medium-range order (MRO) of the 3D atomic arrangement. We find that although the 3D atomic packing of the SRO is geometrically disordered, some SRO connect with each other to form crystal-like networks and give rise to MRO. We identify four crystal-like MRO networks - face-centred cubic, hexagonal close-packed, body-centered cubic and simple cubic - coexisting in the sample, which show translational but no orientational order. These observations confirm that the 3D atomic structure in some parts of the sample is consistent with the efficient cluster packing model. Looking forward, we anticipate this experiment will open the door to determining the 3D atomic coordinates of various amorphous solids, whose impact on non-crystalline solids may be comparable to the first 3D crystal structure solved by x-ray crystallography over a century ago.
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Submitted 17 October, 2020; v1 submitted 5 April, 2020;
originally announced April 2020.
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Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces
Authors:
**shui Miao,
Xiwen Liu,
Kiyoung Jo,
Kang He,
Ravindra Saxena,
Baokun Song,
Huiqin Zhang,
Jiale He,
Myung-Geun Han,
Weida Hu,
Deep Jariwala
Abstract:
Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have led to numerous demonstrations of field-effect devices ranging from transistors to triodes. By exploiting the controlled, substitutional do** schemes…
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Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have led to numerous demonstrations of field-effect devices ranging from transistors to triodes. By exploiting the controlled, substitutional do** schemes in covalently-bonded, three-dimensional (3D) semiconductors and the passivated surfaces of 2D semiconductors, one can construct devices that can exceed performance metrics of 'all-2D' vdW heterojunctions. Here, we demonstrate, 2D/3D semiconductor heterojunctions using MoS2 as the prototypical 2D semiconductor laid upon Si and GaN as the 3D semiconductor layers. By tuning the Fermi levels in MoS2, we demonstrate devices that concurrently exhibit over seven orders of magnitude modulation in rectification ratios and conductance. Our results further suggest that the interface quality does not necessarily affect Fermi-level tuning at the junction opening up possibilities for novel 2D/3D heterojunction device architectures.
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Submitted 22 March, 2020;
originally announced March 2020.
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An Ultra-Compact X-Ray Free-Electron Laser
Authors:
J. B. Rosenzweig,
N. Majernik,
R. R. Robles,
G. Andonian,
O. Camacho,
A. Fukasawa,
A. Kogar,
G. Lawler,
Jianwei Miao,
P. Musumeci,
B. Naranjo,
Y. Sakai,
R. Candler,
B. Pound,
C. Pellegrini,
C. Emma,
A. Halavanau,
J. Hastings,
Z. Li,
M. Nasr,
S. Tantawi,
P. Anisimov,
B. Carlsten,
F. Krawczyk,
E. Simakov
, et al. (11 additional authors not shown)
Abstract:
In the field of beam physics, two frontier topics have taken center stage due to their potential to enable new approaches to discovery in a wide swath of science. These areas are: advanced, high gradient acceleration techniques, and x-ray free electron lasers (XFELs). Further, there is intense interest in the marriage of these two fields, with the goal of producing a very compact XFEL. In this con…
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In the field of beam physics, two frontier topics have taken center stage due to their potential to enable new approaches to discovery in a wide swath of science. These areas are: advanced, high gradient acceleration techniques, and x-ray free electron lasers (XFELs). Further, there is intense interest in the marriage of these two fields, with the goal of producing a very compact XFEL. In this context, recent advances in high gradient radio-frequency cryogenic copper structure research have opened the door to the use of surface electric fields between 250 and 500 MV/m. Such an approach is foreseen to enable a new generation of photoinjectors with six-dimensional beam brightness beyond the current state-of-the-art by well over an order of magnitude. This advance is an essential ingredient enabling an ultra-compact XFEL (UC-XFEL). In addition, one may accelerate these bright beams to GeV scale in less than 10 meters. Such an injector, when combined with inverse free electron laser-based bunching techniques can produce multi-kA beams with unprecedented beam quality, quantified by ~50 nm-rad normalized emittances. These beams, when injected into innovative, short-period (1-10 mm) undulators uniquely enable UC-XFELs having footprints consistent with university-scale laboratories. We describe the architecture and predicted performance of this novel light source, which promises photon production per pulse of a few percent of existing XFEL sources. We review implementation issues including collective beam effects, compact x-ray optics systems, and other relevant technical challenges. To illustrate the potential of such a light source to fundamentally change the current paradigm of XFELs with their limited access, we examine possible applications in biology, chemistry, materials, atomic physics, industry, and medicine which may profit from this new model of performing XFEL science.
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Submitted 14 August, 2020; v1 submitted 12 March, 2020;
originally announced March 2020.
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Disorder dependent spin-orbit torques in L10 FePt single layer
Authors:
S. Q. Zheng,
K. K. Meng,
Q. B. Liu,
J. Miao,
X. G. Xu,
Y. Jiang
Abstract:
We report spin-orbit torques (SOT) in L10-ordered perpendicularly magnetized FePt single layer, which is significantly influenced by disorder. Recently, self-induced SOT in L10-FePt single layer has been investigated, which is ascribed to the composition gradient along the film normal direction. However, the determined mechanisms for magnetization switching have not been fully studied. With varyin…
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We report spin-orbit torques (SOT) in L10-ordered perpendicularly magnetized FePt single layer, which is significantly influenced by disorder. Recently, self-induced SOT in L10-FePt single layer has been investigated, which is ascribed to the composition gradient along the film normal direction. However, the determined mechanisms for magnetization switching have not been fully studied. With varying growth temperatures, we have prepared FePt single layers with same thickness (3 nm) but with different disordering. We have found that nearly full magnetization switching only happens in more disordered films, and the magnetization switching ratio becomes smaller as increasing L10 ordering. The method for deriving effective spin torque fields in the previous studies cannot fully explain the spin current generation and self-induced SOT in L10-FePt single layer. Combined with Magneto-Optical Kerr Effect microscopy and anomalous Hall effect measurements, we concluded that the disorder should determine the formation of domain walls, as well as the spin current generation.
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Submitted 9 December, 2020; v1 submitted 28 February, 2020;
originally announced March 2020.
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Spin Hall magnetoresistance in Pt/YIG bilayers via varying magnon excitation
Authors:
Q. B. Liu,
K. K. Meng,
S. Q. Zheng,
Y. C. Wu,
J. Miao,
X. G. Xu,
Y. Jiang
Abstract:
Spin Hall magnetoresistance (SMR) and magnon excitation magnetoresistance (MMR) that all generate via the spin Hall effect and inverse spin Hall effect in a nonmagnetic material are always related to each other. However, the influence of magnon excitation for SMR is often overlooked due to the negligible MMR. Here, we investigate the SMR in Pt/Y3Fe5O12 (YIG) bilayers from 5 to 300K, in which the Y…
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Spin Hall magnetoresistance (SMR) and magnon excitation magnetoresistance (MMR) that all generate via the spin Hall effect and inverse spin Hall effect in a nonmagnetic material are always related to each other. However, the influence of magnon excitation for SMR is often overlooked due to the negligible MMR. Here, we investigate the SMR in Pt/Y3Fe5O12 (YIG) bilayers from 5 to 300K, in which the YIG are treated after Ar+-ion milling. The SMR in the treated device is smaller than in the non-treated. According to theoretical simulation, we attribute this phenomenon to the reduction of the interfacial spin-mixing conductance at the treated Pt/YIG interface induced by the magnon suppression. Our experimental results point out that the SMR and the MMR are inter-connected, and the former could be modulated via magnon excitation. Our findings provide a new approach for separating and clarifying the underlying mechanisms.
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Submitted 28 February, 2020;
originally announced February 2020.
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Spin-orbit torques driven by the interface-generated spin currents
Authors:
Q. B. Liu,
K. K. Meng,
S. Q. Zheng,
Y. C. Wu,
J. Miao,
X. G. Xu,
Y. Jiang
Abstract:
The spin currents generated by spin-orbit coupling (SOC) in the nonmagnetic metal layer or at the interface with broken inversion symmetry are of particular interest and importance. Here, we have explored the spin current generation mechanisms through the spin-orbit torques (SOTs) measurements in the Ru/Fe heterostructures with weak perpendicular magnetic anisotropy (PMA). Although the spin Hall a…
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The spin currents generated by spin-orbit coupling (SOC) in the nonmagnetic metal layer or at the interface with broken inversion symmetry are of particular interest and importance. Here, we have explored the spin current generation mechanisms through the spin-orbit torques (SOTs) measurements in the Ru/Fe heterostructures with weak perpendicular magnetic anisotropy (PMA). Although the spin Hall angle (SHA) of Ru is smaller than that in Pt, Ta or W, reversible SOT in Ru/Fe heterostructures can still be realized. Through non-adiabatic harmonic Hall voltage measurements and macrospin simulation, the effective SHA in Ru/Fe heterostructures is compared with Pt. Moreover, we also explore that the spin current driven by interface strongly depends on the electrical conductivities. Our results suggest a new method for efficiently generating finite spin currents in ferromagnet/nonmagnetic metal bilayers, which establishes new opportunities for fundamental study of spin dynamics and transport in ferromagnetic systems.
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Submitted 28 February, 2020;
originally announced February 2020.
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Hybrid Exciton-Plasmon-Polaritons in van der Waals Semiconductor Gratings
Authors:
Huiqin Zhang,
Bhaskar Abhiraman,
Qing Zhang,
**shui Miao,
Kiyoung Jo,
Stefano Roccasecca,
Mark W. Knight,
Artur R. Davoyan,
Deep Jariwala
Abstract:
Van der Waals materials and heterostructures manifesting strongly bound room temperature exciton states exhibit emergent physical phenomena and are of a great promise for optoelectronic applications. Here, we demonstrate that nanostructured multilayer transition metal dichalcogenides by themselves provide an ideal platform for excitation and control of excitonic modes, paving the way to exciton-ph…
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Van der Waals materials and heterostructures manifesting strongly bound room temperature exciton states exhibit emergent physical phenomena and are of a great promise for optoelectronic applications. Here, we demonstrate that nanostructured multilayer transition metal dichalcogenides by themselves provide an ideal platform for excitation and control of excitonic modes, paving the way to exciton-photonics. Hence, we show that by patterning the TMDCs into nanoresonators, strong dispersion and avoided crossing of excitons and hybrid polaritons with interaction potentials exceeding 410 meV may be controlled with great precision. We further observe that inherently strong TMDC exciton absorption resonances may be completely suppressed due to excitation of hybrid photon states and their interference. Our work paves the way to a next generation of integrated exciton optoelectronic nano-devices and applications in light generation, computing, and sensing.
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Submitted 31 December, 2019;
originally announced December 2019.
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Giant enhancement of critical current density at high field in superconducting (Li,Fe)OHFeSe films by Mn do**
Authors:
Dong Li,
Jie Yuan,
Peipei Shen,
Chuanying Xi,
**peng Tian,
Shunli Ni,
**gsong Zhang,
Zhongxu Wei,
Wei Hu,
Zian Li,
Li Yu,
Jun Miao,
Fang Zhou,
Li Pi,
Kui **,
Xiaoli Dong,
Zhongxian Zhao
Abstract:
Critical current density (Jc) is one of the major limiting factors for high field applications of iron-based superconductors. Here, we report that Mn-ions are successfully incorporated into nontoxic superconducting (Li,Fe)OHFeSe films. Remarkably, the Jc is significantly enhanced from 0.03 to 0.32 MA/cm^2 under 33 T, and the vortex pinning force density monotonically increases up to 106 GN/m^3, wh…
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Critical current density (Jc) is one of the major limiting factors for high field applications of iron-based superconductors. Here, we report that Mn-ions are successfully incorporated into nontoxic superconducting (Li,Fe)OHFeSe films. Remarkably, the Jc is significantly enhanced from 0.03 to 0.32 MA/cm^2 under 33 T, and the vortex pinning force density monotonically increases up to 106 GN/m^3, which is the highest record so far among all iron-based superconductors. Our results demonstrate that Mn incorporation is an effective method to optimize the performance of (Li,Fe)OHFeSe films, offering a promising candidate for high-field applications.
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Submitted 18 December, 2019;
originally announced December 2019.
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Magnetic and Electronic Properties of Single-Crystalline BaCoSO
Authors:
Yuanhe Song,
Xianshi Liu,
Dong Wu,
Qi Yao,
Chenhao** Wen,
Maxim Avdeev,
Rui Peng,
Haichao Xu,
** Miao,
Xia Lou,
Yifei Fang,
Binglin Pan,
Nanlin Wang,
Darren C. Peets,
Donglai Feng
Abstract:
Doped BaCoSO was recently predicted to be a high-temperature superconductor in a new class based on Co and Ni. Using a Co-S self flux method, we synthesized single crystals of the antiferromagnetic insulator BaCoSO. Our magnetic and specific heat measurements and neutron diffraction provide details of its magnetic anisotropy and order. Its band gap was determined to be about 1.3 eV by our measurem…
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Doped BaCoSO was recently predicted to be a high-temperature superconductor in a new class based on Co and Ni. Using a Co-S self flux method, we synthesized single crystals of the antiferromagnetic insulator BaCoSO. Our magnetic and specific heat measurements and neutron diffraction provide details of its magnetic anisotropy and order. Its band gap was determined to be about 1.3 eV by our measurements of its photoemission spectrum and infrared optical conductivity. Our results can pave the way to exploring the predicted superconductivity in this Co-based material.
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Submitted 8 November, 2019;
originally announced November 2019.
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Nonvolatile ferroelectric field control of the anomalous Hall effect in BiFeO3/SrRuO3 bilayer
Authors:
Z. Y. Ren,
Z. Yuan,
L. F. Wang,
F. Shao,
P. F. Liu,
J. Teng,
K. K. Meng,
X. G. Xu,
J. Miao,
Y. Jiang
Abstract:
In this work, the BiFeO3 (BFO)/SrRuO3 (SRO) heterostructure was fabricated and the anomalous Hall effect (AHE) was investigated the in BFO/SRO. It is found the nonmonotonic anomalous Hall resistivity behavior in BFO/SRO is originated from the inhomogeneous SRO layer instead of the topological Hall effect. It is surprised that the AHE in BFO/SRO structure can be manipulated by ferroelectric polariz…
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In this work, the BiFeO3 (BFO)/SrRuO3 (SRO) heterostructure was fabricated and the anomalous Hall effect (AHE) was investigated the in BFO/SRO. It is found the nonmonotonic anomalous Hall resistivity behavior in BFO/SRO is originated from the inhomogeneous SRO layer instead of the topological Hall effect. It is surprised that the AHE in BFO/SRO structure can be manipulated by ferroelectric polarization of BFO. Moreover, an inhomogeneous phenomenological model has been applied on those structure. Furthermore, the modification of band structure in SRO under ferroelectric polarization was discussed by first principle calculation. The ferroelectric-manipulated AHE suggests a new pathway to realize nonvolatile, reversible and low energy-consuming voltage-controlled spintronic devices.
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Submitted 6 October, 2019;
originally announced October 2019.
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Combination of informational storage and logical processing based on an all-oxide asymmetric multiferroic tunnel junction
Authors:
Q. Liu,
J. Miao,
Z. D. Xu,
P. F. Liu,
Q. H. Zhang,
L. Gu,
K. K. Meng,
X. G. Xu,
J. K. Chen,
Y. Wu,
Y. Jiang
Abstract:
Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide four distinct resistive states in a single memory cell. Here we show that in an all-oxide asymmetric MFTJ of La0.7Sr0.3MnO3 /PbZr0.2Ti0.8O3 /La0.7Te0.3MnO3 (LSMO/…
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Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide four distinct resistive states in a single memory cell. Here we show that in an all-oxide asymmetric MFTJ of La0.7Sr0.3MnO3 /PbZr0.2Ti0.8O3 /La0.7Te0.3MnO3 (LSMO/PZT/LTMO) with p-type and n-type electrodes, the intrinsic rectification is observed and can be modified by the ferroelectric polarization of PZT. Owing to the combined TMR, TER and diode effects, two different groups of four resistive states under opposite reading biases are performed. With two parallel asymmetric junctions and the appropriate series resistance, the coexistence of logic units and quaternary memory cells can be realized in the same array devices. The asymmetric MFTJ structure enables more possibilities for designing next generation of multi-states memory and logical devices with higher storage density, lower energy consumption and significantly increased integration level.
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Submitted 24 June, 2019;
originally announced June 2019.
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Non-Volatile Superconductivity in an Insulating Copper Oxide Induced via Ionic Liquid Gating
Authors:
Xinjian Wei,
Hao-bo Li,
Qinghua Zhang,
Dong Li,
Mingyang Qin,
Wei Hu,
Ge He,
Qing Huan,
Li Yu,
Qihong Chen,
Jun Miao,
Jie Yuan,
Beiyi Zhu,
A. Kusmartseva,
F. V. Kusmartsev,
Alejandro V. Silhanek,
Tao Xiang,
Weiqiang Yu,
Yuan Lin,
Lin Gu,
Pu Yu,
Kui **
Abstract:
Manipulating the superconducting states of high-T_c cuprate superconductors in an efficient and reliable way is of great importance for their applications in next-generation electronics. Traditional methods are mostly based on a trial-and-error method that is difficult to implement and time consuming. Here, employing ionic liquid gating, a selective control of volatile and non-volatile superconduc…
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Manipulating the superconducting states of high-T_c cuprate superconductors in an efficient and reliable way is of great importance for their applications in next-generation electronics. Traditional methods are mostly based on a trial-and-error method that is difficult to implement and time consuming. Here, employing ionic liquid gating, a selective control of volatile and non-volatile superconductivity is achieved in pristine insulating Pr_2CuO_{4\pmδ} film, based on two distinct mechanisms: 1) with positive electric fields, the film can be reversibly switched between non-superconducting and superconducting states, attributed to the carrier do** effect. 2) The film becomes more resistive by applying negative bias voltage up to -4 V, but strikingly, a non-volatile superconductivity is achieved once the gate voltage is removed. Such a persistent superconducting state represents a novel phenomenon in copper oxides, resulting from the do** healing of oxygen vacancies in copper-oxygen planes as unraveled by high-resolution scanning transmission electron microscope and in-situ x-ray diffraction experiments. The effective manipulation and mastering of volatile/non-volatile superconductivity in the same parent cuprate opens the door to more functionalities for superconducting electronics, as well as supplies flexible samples for investigating the nature of quantum phase transitions in high-T_c superconductors.
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Submitted 17 June, 2019;
originally announced June 2019.
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Controlling spin-orbit torque by polarization field in multiferroic BiFeO3 based heterostructures
Authors:
P. F. Liu,
J. Miao,
Q. Liu,
Z. D. Xu,
Z. Y. Ren,
K. K. Meng,
Y. Wu,
J. K. Chen,
X. G. Xu,
Y. Jiang
Abstract:
In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for develo** next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is being intensely pursued. Especially, how to control the switching current density, which is expected to enrich device functionalities, has aroused much interes…
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In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for develo** next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is being intensely pursued. Especially, how to control the switching current density, which is expected to enrich device functionalities, has aroused much interest among researchers all over the world. In this paper, a novel method to adjust the switching current is proposed, and the BiFeO3 (BFO) based heterostructures with opposite spontaneous polarizations fields show huge changes in both perpendicular magnetic anisotropy and the SOT-induced magnetization switching. The dam**-like torques were estimated by using harmonic Hall voltage measurement, and the variation of effective spin Hall angles for the heterostructures with opposite polarizations was calculated to be 272%. At the end of this paper, we have also demonstrated the possible applications of our structure in memory and reconfigurable logic devices.
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Submitted 25 March, 2019;
originally announced March 2019.
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Exact Solution to Haldane-BCS-Hubbard Model Along the Symmetric Lines: Interaction Induced Topological Phase Transition
Authors:
Jian-Jian Miao,
Dong-Hui Xu,
Long Zhang,
Fu-Chun Zhang
Abstract:
We propose a Haldane-BCS-Hubbard model on a honeycomb lattice, which is composed of two copies of the Haldane model of the quantum anomalous Hall effect, an equal-spin pairing term and an onsite Hubbard interaction term. For any interaction strength, this model is exactly solvable along the symmetric line where the hop** and pairing amplitudes are equal to each other. The ground state of the Hal…
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We propose a Haldane-BCS-Hubbard model on a honeycomb lattice, which is composed of two copies of the Haldane model of the quantum anomalous Hall effect, an equal-spin pairing term and an onsite Hubbard interaction term. For any interaction strength, this model is exactly solvable along the symmetric line where the hop** and pairing amplitudes are equal to each other. The ground state of the Haldane-BCS-Hubbard model is a topological superconducting state at weak interaction with two chiral Majorana edge states. A strong interaction drives the system across a topological quantum phase transition to a topologically trivial superconductor. A $\mathbb{Z}_{2}$ symmetry of the Hamiltonian, which is a composition of the bond-centered inversion and a gauge transformation, is spontaneously broken by the interaction, resulting a finite antiferromagnetic order in the $y$-direction.
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Submitted 25 June, 2019; v1 submitted 14 March, 2019;
originally announced March 2019.
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Interface-driven unusual anomalous Hall effect in MnxGa/Pt bilayers: No correlation with chiral spin structures
Authors:
Kangkang Meng,
Lijun Zhu,
Zhenhu **,
Enke Liu,
Xupeng Zhao,
Iftikhar Ahmed Malik,
Zhenguo Fu,
Yong Wu,
Jun Miao,
Xiaoguang Xu,
**xing Zhang,
Jianhua Zhao,
Yong Jiang
Abstract:
The effects of spin-orbit coupling and symmetry breaking at the interface between a ferromagnet and heavy metal are particularly important for spin-based information storage and computation. Recent discoveries suggest they can create chiral spin structures (e.g. skyrmions), which have often been identified through the appearance of the bump/dip features of Hall signals, the so-called topological H…
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The effects of spin-orbit coupling and symmetry breaking at the interface between a ferromagnet and heavy metal are particularly important for spin-based information storage and computation. Recent discoveries suggest they can create chiral spin structures (e.g. skyrmions), which have often been identified through the appearance of the bump/dip features of Hall signals, the so-called topological Hall effect (THE). In this work, however, we have present an unusual anomalous Hall effect (UAHE) in MnxGa/Pt bilayers and demonstrated that the features extremely similar to THE can be generated without involving any chiral spin structures. The low temperature magnetic force microscopy has been used to explore the magnetic field-dependent behavior of spin structures, and the UAHE as a function of magnetic field does not peak near the maximal density of magnetic bubbles. The results unambiguously evidence that the UAHE in MnxGa/Pt bilayers shows no correlation with chiral spin structures but is driven by the modified interfacial properties. The bump/dip features of Hall signals cannot be taken as an unambiguous signature for the emergence of chiral spin structures, and a wealth of underlying and interesting physics need explored.
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Submitted 19 July, 2019; v1 submitted 17 January, 2019;
originally announced January 2019.
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Correlating 3D atomic defects and electronic properties of 2D materials with picometer precision
Authors:
Xuezeng Tian,
Dennis S. Kim,
Shize Yang,
Christopher J. Ciccarino,
Yongji Gong,
Yongsoo Yang,
Yao Yang,
Blake Duschatko,
Yakun Yuan,
Pulickel M. Ajayan,
Juan-Carlos Idrobo,
Prineha Narang,
Jianwei Miao
Abstract:
The exceptional electronic, optical and chemical properties of two-dimensional materials strongly depend on the 3D atomic structure and crystal defects. Using Re-doped MoS2 as a model, here we develop scanning atomic electron tomography (sAET) to determine the 3D atomic positions and crystal defects such as dopants, vacancies and ripples with a precision down to 4 picometers. We measure the 3D bon…
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The exceptional electronic, optical and chemical properties of two-dimensional materials strongly depend on the 3D atomic structure and crystal defects. Using Re-doped MoS2 as a model, here we develop scanning atomic electron tomography (sAET) to determine the 3D atomic positions and crystal defects such as dopants, vacancies and ripples with a precision down to 4 picometers. We measure the 3D bond distortion and local strain tensor induced by single dopants for the first time. By directly providing experimental 3D atomic coordinates to density functional theory (DFT), we obtain more truthful electronic band structures than those derived from conventional DFT calculations relying on relaxed 3D atomic models, which is confirmed by photoluminescence measurements. We anticipate that sAET is not only generally applicable to the determination of the 3D atomic coordinates of 2D materials, heterostructures and thin films, but also could transform ab initio calculations by using experimental 3D atomic coordinates as direct input to better predict and discover new physical, chemical and electronic properties.
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Submitted 8 September, 2019; v1 submitted 3 January, 2019;
originally announced January 2019.
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Scaling of intrinsic domain wall magneto-resistance with confinement in electromigrated nanocontacts
Authors:
Robert M. Reeve,
André Loescher,
Hamidreza Kazemi,
Bertrand Dupé,
Thomas Winkler,
Daniel Schönke,
Jun Miao,
Kai Litzius,
Nicholas Sedlmayr,
Imke Schneider,
Jairo Sinova,
Sebastian Eggert,
Mathias Kläui
Abstract:
In this work we study the evolution of intrinsic domain wall magnetoresistance (DWMR) with domain wall confinement. Clean permalloy notched half-ring nanocontacts are fabricated using a special ultra-high vacuum electromigration procedure to tailor the size of the wire in-situ and through the resulting domain wall confinement we tailor the domain wall width from a few tens of nm down to a few nm.…
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In this work we study the evolution of intrinsic domain wall magnetoresistance (DWMR) with domain wall confinement. Clean permalloy notched half-ring nanocontacts are fabricated using a special ultra-high vacuum electromigration procedure to tailor the size of the wire in-situ and through the resulting domain wall confinement we tailor the domain wall width from a few tens of nm down to a few nm. Through measurements of the dependence of the resistance with respect to the applied field direction we extract the contribution of a single domain wall to the MR of the device, as a function of the domain wall width in the confining potential at the notch. In this size range, an intrinsic positive MR is found, which dominates over anisotropic MR, as confirmed by comparison to micromagnetic simulations. Moreover, the MR is found to scale monotonically with the size of the domain wall, $δ_{DW}$, as 1/$δ_{DW}^b$, with $b=2.31\pm 0.39 $. The experimental result is supported by quantum-mechanical transport simulations based on ab-initio density functional theory calculations.
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Submitted 13 December, 2018;
originally announced December 2018.