Showing 1–50 of 58 results for author: Miao, F

Electrical switching of Ising-superconducting nonreciprocity for quantum neuronal transistor

Authors: Junlin Xiong, Jiao Xie, Bin Cheng, Yudi Dai, Xinyu Cui, Lizheng Wang, Zenglin Liu, Ji Zhou, Naizhou Wang, Xianghan Xu, Xianhui Chen, Sang-Wook Cheong, Shi-Jun Liang, Feng Miao

Abstract: Nonreciprocal quantum transport effect is mainly governed by the symmetry breaking of the material systems and is gaining extensive attention in condensed matter physics. Realizing electrical switching of the polarity of the nonreciprocal transport without external magnetic field is essential to the development of nonreciprocal quantum devices. However, electrical switching of superconducting nonr… ▽ More Nonreciprocal quantum transport effect is mainly governed by the symmetry breaking of the material systems and is gaining extensive attention in condensed matter physics. Realizing electrical switching of the polarity of the nonreciprocal transport without external magnetic field is essential to the development of nonreciprocal quantum devices. However, electrical switching of superconducting nonreciprocity remains yet to be achieved. Here, we report the observation of field-free electrical switching of nonreciprocal Ising superconductivity in Fe3GeTe2/NbSe2 van der Waals (vdW) heterostructure. By taking advantage of this electrically switchable superconducting nonreciprocity, we demonstrate a proof-of-concept nonreciprocal quantum neuronal transistor, which allows for implementing the XOR logic gate and faithfully emulating biological functionality of a cortical neuron in the brain. Our work provides a promising pathway to realize field-free and electrically switchable nonreciprocity of quantum transport and demonstrate its potential in exploring neuromorphic quantum devices with both functionality and performance beyond the traditional devices. △ Less

Submitted 20 June, 2024; originally announced June 2024.

Journal ref: Nature Communications 15, 4953 (2024)

Tunable moiré bandgap in hBN-aligned bilayer graphene device with in-situ electrostatic gating

Authors: Hanbo Xiao, Han Gao, Min Li, Fanqiang Chen, Qiao Li, Yiwei Li, Meixiao Wang, Fangyuan Zhu, Lexian Yang, Feng Miao, Yulin Chen, Cheng Chen, Bin Cheng, Jianpeng Liu, Zhongkai Liu

Abstract: Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The primary challenge in modulating this gap has been the absence of a direct method for observing changes of the band gap in momentum space. In this study, we employ advanced spatial- and angle-resolved photoemission spectro… ▽ More Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The primary challenge in modulating this gap has been the absence of a direct method for observing changes of the band gap in momentum space. In this study, we employ advanced spatial- and angle-resolved photoemission spectroscopy technique to directly visualize the gap formation in bilayer graphene, modulated by both displacement fields and moiré potentials. The application of displacement field via in-situ electrostatic gating introduces a sizable and tunable electronic bandgap, proportional to the field strength up to 100 meV. Meanwhile, the moiré potential, induced by aligning the underlying hexagonal boron nitride substrate, extends the bandgap by ~ 20 meV. Theoretical calculations, effectively capture the experimental observations. Our investigation provides a quantitative understanding of how these two mechanisms collaboratively modulate the band gap in bilayer graphene, offering valuable guidance for the design of graphene-based electronic devices. △ Less

Submitted 24 May, 2024; v1 submitted 20 May, 2024; originally announced May 2024.

Comments: 16 pages,4 figures

Interfacial magnetic spin Hall effect in van der Waals Fe3GeTe2/MoTe2 heterostructure

Authors: Yudi Dai, Junlin Xiong, Yanfeng Ge, Bin Cheng, Lizheng Wang, Pengfei Wang, Zenglin Liu, Shengnan Yan, Cuiwei Zhang, Xianghan Xu, Youguo Shi, Sang-Wook Cheong, Cong Xiao, Shengyuan A. Yang, Shi-Jun Liang, Feng Miao

Abstract: The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples SHE to magnetization in ferromagnetic materials, offers a new charge-spin conversion mecha… ▽ More The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples SHE to magnetization in ferromagnetic materials, offers a new charge-spin conversion mechanism with new functionalities. Here, we report the observation of giant T-odd SHE in Fe3GeTe2/MoTe2 van der Waals heterostructure, representing a previously unidentified interfacial magnetic spin Hall effect (interfacial-MSHE). Through rigorous symmetry analysis and theoretical calculations, we attribute the interfacial-MSHE to a symmetry-breaking induced spin current dipole at the vdW interface. Furthermore, we show that this linear effect can be used for implementing multiply-accumulate operations and binary convolutional neural networks with cascaded multi-terminal devices. Our findings uncover an interfacial T-odd charge-spin conversion mechanism with promising potential for energy-efficient in-memory computing. △ Less

Submitted 26 March, 2024; originally announced March 2024.

Journal ref: Nature Communications 15, 1129 (2024)

Moire synaptic transistor for homogeneous-architecture reservoir computing

Authors: Pengfei Wang, Moyu Chen, Yongqin Xie, Chen Pan, Kenji Watanabe, Takashi Taniguchi, Bin Cheng, Shi-Jun Liang, Feng Miao

Abstract: Reservoir computing has been considered as a promising intelligent computing paradigm for effectively processing complex temporal information. Exploiting tunable and reproducible dynamics in the single electronic device have been desired to implement the reservoir and the readout layer of reservoir computing system. Two-dimensional moire material, with an artificial lattice constant many times lar… ▽ More Reservoir computing has been considered as a promising intelligent computing paradigm for effectively processing complex temporal information. Exploiting tunable and reproducible dynamics in the single electronic device have been desired to implement the reservoir and the readout layer of reservoir computing system. Two-dimensional moire material, with an artificial lattice constant many times larger than the atomic length scale, is one type of most studied artificial quantum materials in community of material science and condensed-matter physics over the past years. These materials are featured with gate-tunable periodic potential and electronic correlation, thus varying the electric field allows the electrons in the moire potential per unit cell to exhibit distinct and reproducible dynamics, showing great promise in robust reservoir computing. Here, we report that a moire synaptic transistor can be used to implement the reservoir computing system with a homogeneous reservoir-readout architecture. The synaptic transistor is fabricated based on a h-BN/bilayer graphene/h-BN moire heterostructure, exhibiting ferroelectricity-like hysteretic gate voltage dependence of resistance. Varying the magnitude of the gate voltage enables the moire transistor to be switched between long-term memory and short-term memory with nonlinear dynamics. By employing the short- and long-term memory as the reservoir nodes and weights of the readout layer, respectively, we construct a full-moire physical neural network and demonstrate that the classification accuracy of 90.8% can be achieved for the MNIST handwritten digit database. Our work would pave the way towards the development of neuromorphic computing based on the moire materials. △ Less

Submitted 18 October, 2023; originally announced October 2023.

Journal ref: Chin. Phys. Lett. 2023 40 (11): 117201

Cascadable in-memory computing based on symmetric writing and read out

Authors: Lizheng Wang, Junlin Xiong, Bin Cheng, Yudi Dai, Fuyi Wang, Chen Pan, Tianjun Cao, Xiaowei Liu, Pengfei Wang, Moyu Chen, Shengnan Yan, Zenglin Liu, **g**g Xiao, Xianghan Xu, Zhenlin Wang, Youguo Shi, Sang-Wook Cheong, Haijun Zhang, Shi-Jun Liang, Feng Miao

Abstract: The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and read-out operations impose challenges in downscaling and direct cascadability of p-MTJ devices. Here, we propose that a new symmetric write and read-out mechanism can be realized in perpendicular-anis… ▽ More The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and read-out operations impose challenges in downscaling and direct cascadability of p-MTJ devices. Here, we propose that a new symmetric write and read-out mechanism can be realized in perpendicular-anisotropy spin-orbit (PASO) quantum materials based on Fe3GeTe2 and WTe2. We demonstrate that field-free and deterministic reversal of the perpendicular magnetization can be achieved by employing unconventional charge to z-spin conversion. The resulting magnetic state can be readily probed with its intrinsic inverse process, i.e., z-spin to charge conversion. Using the PASO quantum material as a fundamental building block, we implement the functionally complete set of logic-in-memory operations and a more complex nonvolatile half-adder logic function. Our work highlights the potential of PASO quantum materials for the development of scalable energy-efficient and ultrafast spintronic computing. △ Less

Submitted 12 November, 2022; originally announced November 2022.

Comments: Accepted by Science Advances

Approaching intrinsic threshold breakdown voltage and ultra-high gain in graphite/InSe Schottky photodetector

Authors: Zhiyi Zhang, Bin Cheng, Jeremy Lim, Anyuan Gao, Lingyuan Lyu, Tianju Cao, Shuang Wang, Zhu-An Li, Qingyun Wu, L. K. Ang, Yee Sin Ang, Shi-Jun Liang, Feng Miao

Abstract: Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report that an ultra-high avalanche gain of 3*10^5 can be realized in the graphite/InSe Schottky photodetector at a breakdown voltage down to 5.5 V. Remarkably, the threshold breakdown voltage can be further reduced down to 1.8… ▽ More Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report that an ultra-high avalanche gain of 3*10^5 can be realized in the graphite/InSe Schottky photodetector at a breakdown voltage down to 5.5 V. Remarkably, the threshold breakdown voltage can be further reduced down to 1.8 V by raising the operating temperature, approaching the theoretical limit of 1.5E_g/e with E_g the band gap of semiconductor. We develop a two-dimensional impact ionization model and uncover that observation of high gain at low breakdown voltage arises from reduced dimensionality of electron-phonon (e-ph) scattering in the layered InSe flake. Our findings open up a promising avenue for develo** novel weak-light detectors with low energy consumption and high sensitivity. △ Less

Submitted 11 November, 2022; originally announced November 2022.

Tunable quantum criticalities in an isospin extended Hubbard model simulator

Authors: Qiao Li, Bin Cheng, Moyu Chen, Bo Xie, Yongqin Xie, Pengfei Wang, Fanqiang Chen, Zenglin Liu, Kenji Watanabe, Takashi Taniguchi, Shi-Jun Liang, Da Wang, Chenjie Wang, Qiang-Hua Wang, Jianpeng Liu, Feng Miao

Abstract: Studying strong electron correlations has been an essential driving force for pushing the frontiers of condensed matter physics. In particular, in the vicinity of correlation-driven quantum phase transitions (QPTs), quantum critical fluctuations of multiple degrees of freedom facilitate exotic many-body states and quantum critical behaviors beyond Landau's framework. Recently, moiré heterostructur… ▽ More Studying strong electron correlations has been an essential driving force for pushing the frontiers of condensed matter physics. In particular, in the vicinity of correlation-driven quantum phase transitions (QPTs), quantum critical fluctuations of multiple degrees of freedom facilitate exotic many-body states and quantum critical behaviors beyond Landau's framework. Recently, moiré heterostructures of van der Waals materials have been demonstrated as a highly tunable quantum platform for exploring fascinating strongly correlated quantum physics. Here, we report the observation of tunable quantum criticalities in an experimental simulator of extended Hubbard model with spin-valley isospins arising in chiral-stacked twisted double bilayer graphene. Scaling analysis shows a quantum two-stage criticality manifesting two distinct quantum critical points as the generalized Wigner crystal transits to a Fermi liquid by varying the displacement field, suggesting the emergence of a critical intermediate phase. The quantum two-stage criticality evolves into a quantum pseudo criticality as a high parallel magnetic field is applied. In such pseudo criticality, we find that the quantum critical scaling is only valid above a critical temperature, indicating a weak first-order QPT therein. Our results demonstrate a highly tunable solid-state simulator with intricate interplay of multiple degrees of freedom for exploring exotic quantum critical states and behaviors. △ Less

Submitted 15 September, 2022; originally announced September 2022.

Comments: https://www.nature.com/articles/s41586-022-05106-0

Journal ref: Nature (2022)

Observation of Coexisting Dirac Bands and Moiré Flat Bands in Magic-Angle Twisted Trilayer Graphene

Authors: Yiwei Li, Shihao Zhang, Fanqiang Chen, Liyang Wei, Zonglin Zhang, Hanbo Xiao, Han Gao, Moyu Chen, Shijun Liang, Ding Pei, Lixuan Xu, Kenji Watanabe, Takashi Taniguchi, Lexian Yang, Feng Miao, Jianpeng Liu, Bin Cheng, Meixiao Wang, Yulin Chen, Zhongkai Liu

Abstract: Moiré superlattices that consist of two or more layers of two-dimensional materials stacked together with a small twist angle have emerged as a tunable platform to realize various correlated and topological phases, such as Mott insulators, unconventional uperconductivity and quantum anomalous Hall effect. Recently, the magic-angle twisted trilayer graphene (MATTG) has shown both robust superconduc… ▽ More Moiré superlattices that consist of two or more layers of two-dimensional materials stacked together with a small twist angle have emerged as a tunable platform to realize various correlated and topological phases, such as Mott insulators, unconventional uperconductivity and quantum anomalous Hall effect. Recently, the magic-angle twisted trilayer graphene (MATTG) has shown both robust superconductivity similar to magic-angle twisted bilayer graphene (MATBG) and other unique properties, including the Pauli-limit violating and re-entrant superconductivity. These rich properties are deeply rooted in its electronic structure under the influence of distinct moiré potential and mirror symmetry. Here, combining nanometer-scale spatially resolved angle-resolved photoemission spectroscopy (nano-ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we systematically measure the yet unexplored band structure of MATTG near charge neutrality. Our measurements reveal the coexistence of the distinct dispersive Dirac band with the emergent moiré flat band, showing nice agreement with the theoretical calculations. These results serve as a stepstone for further understanding of the unconventional superconductivity in MATTG. △ Less

Submitted 8 September, 2022; v1 submitted 5 September, 2022; originally announced September 2022.

Comments: accepted by Advanced Materials

Scalable massively parallel computing using continuous-time data representation in nanoscale crossbar array

Authors: Cong Wang, Shi-Jun Liang, Chen-Yu Wang, Zai-Zheng Yang, Yingmeng Ge, Chen Pan, Xi Shen, Wei Wei, Yichen Zhao, Zaichen Zhang, Bin Cheng, Chuan Zhang, Feng Miao

Abstract: The growth of connected intelligent devices in the Internet of Things has created a pressing need for real-time processing and understanding of large volumes of analogue data. The difficulty in boosting the computing speed renders digital computing unable to meet the demand for processing analogue information that is intrinsically continuous in magnitude and time. By utilizing a continuous data re… ▽ More The growth of connected intelligent devices in the Internet of Things has created a pressing need for real-time processing and understanding of large volumes of analogue data. The difficulty in boosting the computing speed renders digital computing unable to meet the demand for processing analogue information that is intrinsically continuous in magnitude and time. By utilizing a continuous data representation in a nanoscale crossbar array, parallel computing can be implemented for the direct processing of analogue information in real time. Here, we propose a scalable massively parallel computing scheme by exploiting a continuous-time data representation and frequency multiplexing in a nanoscale crossbar array. This computing scheme enables the parallel reading of stored data and the one-shot operation of matrix-matrix multiplications in the crossbar array. Furthermore, we achieve the one-shot recognition of 16 letter images based on two physically interconnected crossbar arrays and demonstrate that the processing and modulation of analogue information can be simultaneously performed in a memristive crossbar array. △ Less

Submitted 16 September, 2021; originally announced September 2021.

Comments: 18 pages, 4 figures

Journal ref: Nature Nanotechnology (2021)

2022 Roadmap on Neuromorphic Computing and Engineering

Authors: Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco, Abu Sebastian, Manuel Le Gallo, Andrea Redaelli, Stefan Slesazeck, Thomas Mikolajick, Sabina Spiga, Stephan Menzel, Ilia Valov, Gianluca Milano, Carlo Ricciardi, Shi-Jun Liang, Feng Miao, Mario Lanza, Tyler J. Quill, Scott T. Keene, Alberto Salleo, Julie Grollier, Danijela Marković, Alice Mizrahi, Peng Yao, J. Joshua Yang, Giacomo Indiveri , et al. (34 additional authors not shown)

Abstract: Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exas… ▽ More Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exascale with 1018 calculations each second. Even though these future computers will be incredibly powerful, if they are based on von Neumann type architectures, they will consume between 20 and 30 megawatts of power and will not have intrinsic physically built-in capabilities to learn or deal with complex data as our brain does. These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain. This new generation of computers has the potential to be used for the storage and processing of large amounts of digital information with much lower power consumption than conventional processors. Among their potential future applications, an important niche is moving the control from data centers to edge devices. The aim of this Roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of neuromorphic technology, namely materials, devices, neuromorphic circuits, neuromorphic algorithms, applications, and ethics. The Roadmap is a collection of perspectives where leading researchers in the neuromorphic community provide their own view about the current state and the future challenges. We hope that this Roadmap will be a useful resource to readers outside this field, for those who are just entering the field, and for those who are well established in the neuromorphic community. https://doi.org/10.1088/2634-4386/ac4a83 △ Less

Submitted 13 January, 2022; v1 submitted 12 May, 2021; originally announced May 2021.

Journal ref: Neuromorph. Comput. Eng. 2 022501 (2022)

Temperature-sensitive spatial distribution of defects in PdSe2 flakes

Authors: Xiaowei Liu, Yaojia Wang, Qiqi Guo, Shijun Liang, Tao Xu, Bo Liu, Jiabin Qiao, Shengqiang Lai, Junwen Zeng, Song Hao, Chenyi Gu, Tianjun Cao, Chenyu Wang, Yu Wang, Chen Pan, Guangxu Su, Yuefeng Nie, Xiangang Wan, Litao Sun, Zhenlin Wang, Lin He, Bin Cheng, Feng Miao

Abstract: Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and concentration of defects, rather than dynamically reconfiguring their spatial distribution. Here, we report temperature-sensitive spatial redistribution of defects in PdSe2 thin flakes through scanning tunneling microsco… ▽ More Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and concentration of defects, rather than dynamically reconfiguring their spatial distribution. Here, we report temperature-sensitive spatial redistribution of defects in PdSe2 thin flakes through scanning tunneling microscopy (STM). We observe that the spatial distribution of Se vacancies in PdSe2 flakes exhibits a strong anisotropic characteristic at 80 K, and that this orientation-dependent feature is weakened when temperature is raised. Moreover, we carry out transport measurements on PdSe2 thin flakes and show that the anisotropic features of carrier mobility and phase coherent length are also sensitive to temperature. Combining with theoretical analysis, we conclude that temperature-driven defect spatial redistribution could interpret the temperature-sensitive electrical transport behaviors in PdSe2 thin flakes. Our work highlights that engineering spatial distribution of defects in the van der Waals materials, which has been overlooked before, may open up a new avenue to tailor the physical properties of materials and explore new device functionalities. △ Less

Submitted 14 April, 2021; originally announced April 2021.

Comments: 24 pages, 12 figures, accepted by Physical Review Materials

Observation of Negative THz Photoconductivity in Large Area Type-II Dirac Semimetal PtTe2

Authors: Peng Suo, Huiyun Zhang, Shengnan Yan, Wenjie Zhang, Jibo Fu, Xian Lin, Song Hao, Zuanming **, Yu** Zhang, Chao Zhang, Feng Miao, Shi-Jun Liang, Guohong Ma

Abstract: As a newly emergent type-II Dirac semimetal, Platinum Telluride (PtTe2) stands out from other 2D noble-transition-metal dichalcogenides for the unique structure and novel physical properties, such as high carrier mobility, strong electron-phonon coupling and tunable bandgap, which make the PtTe2 a good candidate for applications in optoelectronics, valleytronics and far infrared detectors. Althoug… ▽ More As a newly emergent type-II Dirac semimetal, Platinum Telluride (PtTe2) stands out from other 2D noble-transition-metal dichalcogenides for the unique structure and novel physical properties, such as high carrier mobility, strong electron-phonon coupling and tunable bandgap, which make the PtTe2 a good candidate for applications in optoelectronics, valleytronics and far infrared detectors. Although the transport properties of PtTe2 have been studied extensively, the dynamics of the nonequilibrium carriers remain nearly uninvestigated. Herein we employ optical pump-terahertz (THz) probe spectroscopy (OPTP) to systematically study the photocarrier dynamics of PtTe2 thin films with varying pump fluence, temperature, and film thickness. Upon photoexcitation the THz photoconductivity (PC) of 5 nm PtTe2 film shows abrupt increase initially, while the THz PC changes into negative value in a subpicosecond time scale, followed by a prolonged recovery process that lasted hundreds of picoseconds (ps). This unusual THz PC response observed in the 5 nm PtTe2 film was found to be absent in a 2 nm PtTe2 film. We assign the unexpected negative THz PC as the small polaron formation due to the strong electron-Eg-mode phonon coupling, which is further substantiated by pump fluence- and temperature-dependent measurements as well as the Raman spectroscopy. Moreover, our investigations give a subpicosecond time scale of sequential carrier cooling and polaron formation. The present study provides deep insights into the underlying dynamics evolution mechanisms of photocarrier in type-II Dirac semimetal upon photoexcitation, which is fundamental importance for designing PtTe2-based optoelectronic devices. △ Less

Submitted 1 February, 2021; v1 submitted 23 June, 2020; originally announced June 2020.

Comments: 18 pages, 4 figures

Journal ref: Phys. Rev. Lett. 126, 227402 (2021)

Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor

Authors: Chen-Yu Wang, Shi-Jun Liang, Shuang Wang, Pengfei Wang, Zhuan Li, Zhongrui Wang, Anyuan Gao, Chen Pan, Chuan Liu, Jian Liu, Huafeng Yang, Xiaowei Liu, Wenhao Song, Cong Wang, Xiaomu Wang, Kunji Chen, Zhenlin Wang, Kenji Watanabe, Takashi Taniguchi, J. Joshua Yang, Feng Miao

Abstract: Early processing of visual information takes place in the human retina. Mimicking neurobiological structures and functionalities of the retina provide a promising pathway to achieving vision sensor with highly efficient image processing. Here, we demonstrate a prototype vision sensor that operates via the gate-tunable positive and negative photoresponses of the van der Waals (vdW) vertical heteros… ▽ More Early processing of visual information takes place in the human retina. Mimicking neurobiological structures and functionalities of the retina provide a promising pathway to achieving vision sensor with highly efficient image processing. Here, we demonstrate a prototype vision sensor that operates via the gate-tunable positive and negative photoresponses of the van der Waals (vdW) vertical heterostructures. The sensor emulates not only the neurobiological functionalities of bipolar cells and photoreceptors but also the unique synaptic connectivity between bipolar cells and photoreceptors. By tuning gate voltage for each pixel, we achieve reconfigurable vision sensor for simultaneously image sensing and processing. Furthermore, our prototype vision sensor itself can be trained to classify the input images, via updating the gate voltages applied individually to each pixel in the sensor. Our work indicates that vdW vertical heterostructures offer a promising platform for the development of neural network vision sensor. △ Less

Submitted 25 March, 2020; v1 submitted 4 March, 2020; originally announced March 2020.

Comments: 20 pages, 4 figures

Journal ref: Science Advances 6, eaba6173 (2020)

Phase-controllable growth of ultrathin 2D magnetic FeTe crystals

Authors: Lixing Kang, Chen Ye, Xiaoxu Zhao, Xieyu Zhou, Junxiong Hu, Qiao Li, Qingling Ouyang, Jiefu Yang, Dianyi Hu, Jieqiong Chen, Xun Cao, Yong Zhang, Manzhang Xu, Jun Di, Dan Tian, Pin Song, Govindan Kutty, Qingsheng Zeng, Qundong Fu, Ya Deng, Jiadong Zhou, Stephen J. Pennycook, Ariando Ariando, Feng Miao, Guo Hong , et al. (5 additional authors not shown)

Abstract: Two-dimensional (2D) magnets with intrinsic ferromagnetic/antiferromagnetic (FM/AFM) ordering are highly desirable for future spintronics devices. However, the synthesis of 2D magnetic crystals, especially the direct growth on SiO2/Si substrate, is just in its infancy. Here, we report a chemical vapor deposition (CVD)-based rational growth approach for the synthesis of ultrathin FeTe crystals with… ▽ More Two-dimensional (2D) magnets with intrinsic ferromagnetic/antiferromagnetic (FM/AFM) ordering are highly desirable for future spintronics devices. However, the synthesis of 2D magnetic crystals, especially the direct growth on SiO2/Si substrate, is just in its infancy. Here, we report a chemical vapor deposition (CVD)-based rational growth approach for the synthesis of ultrathin FeTe crystals with controlled structural and magnetic phases. By precisely optimizing the growth temperature (Tgrowth), FeTe nanoplates with either layered tetragonal or non-layered hexagonal phase can be controlled with high-quality. The two controllable phases lead to square and triangular morphologies with a thickness down to 3.6 and 2.8 nm, respectively. More importantly, transport measurements reveal that tetragonal FeTe is antiferromagnetic with a Neel temperature (TN) about 71.8 K, while hexagonal FeTe is ferromagnetic with a Curie temperature (TC) around 220 K. Theoretical calculations indicate that the ferromagnetic order in hexagonal FeTe is originated from a concomitant lattice distortion and the spin-lattice coupling. This study represents a major step forward in the CVD growth of 2D magnetic materials on SiO2/Si substrates and highlights on their potential applications in the future spintronic devices. △ Less

Submitted 13 December, 2019; originally announced December 2019.

Comments: 15 pages, 5 figures

Journal ref: Nat Commun 11, 3729 (2020)

Direct evidence for charge compensation induced large magnetoresistance in thin WTe2

Authors: Yaojia Wang, Lizheng Wang, Xiaowei Liu, Heng Wu, Pengfei Wang, Dayu Yan, Bin Cheng, Youguo Shi, Kenji Watanabe, Takashi Taniguchi, Shi-Jun Liang, Feng Miao

Abstract: Since the discovery of extremely large non-saturating magnetoresistance (MR) in WTe2, much effort has been devoted to understanding the underlying mechanism, which is still under debate. Here, we explicitly identify the dominant physical origin of the large non-saturating MR through in-situ tuning of the magneto-transport properties in thin WTe2 film. With an electrostatic do** approach, we obse… ▽ More Since the discovery of extremely large non-saturating magnetoresistance (MR) in WTe2, much effort has been devoted to understanding the underlying mechanism, which is still under debate. Here, we explicitly identify the dominant physical origin of the large non-saturating MR through in-situ tuning of the magneto-transport properties in thin WTe2 film. With an electrostatic do** approach, we observed a non-monotonic gate dependence of the MR. The MR reaches a maximum (10600%) in thin WTe2 film at certain gate voltage where electron and hole concentrations are balanced, indicating that the charge compensation is the dominant mechanism of the observed large MR. Besides, we show that the temperature dependent magnetoresistance exhibits similar tendency with the carrier mobility when the charge compensation is retained, revealing that distinct scattering mechanisms may be at play for the temperature dependence of magneto-transport properties. Our work would be helpful for understanding mechanism of the large MR in other nonmagnetic materials and offers an avenue for achieving large MR in the non-magnetic materials with electron-hole pockets. △ Less

Submitted 13 May, 2019; originally announced May 2019.

Comments: 16 pages, 3 figures, accepted by Nano Letters

Mixed magnetism, nanoscale electronic segregation and ubiquitous first order transitions in giant magnetocaloric MnFeSiP alloys detected by $^{55}$Mn NMR

Authors: R. Hussain, F. Cugini, S. Baldini, G. Porcari, N. Sarzi Amadè, X. F. Miao, N. H. van Dijk, E. Brück, M. Solzi, R. De Renzi, G. Allodi

Abstract: We report on a study on a representative set of Fe$_{2}$P-based MnFePSi samples by means of $^{55}$Mn NMR in both zero and applied magnetic field. The first-order nature of the magnetic transition is demonstrated by truncated order parameter curves with a large value of the local ordered moment at the Curie point, even at compositions where the transition appears second order from magnetic measure… ▽ More We report on a study on a representative set of Fe$_{2}$P-based MnFePSi samples by means of $^{55}$Mn NMR in both zero and applied magnetic field. The first-order nature of the magnetic transition is demonstrated by truncated order parameter curves with a large value of the local ordered moment at the Curie point, even at compositions where the transition appears second order from magnetic measurements. No weak ferromagnetic order could be detected at Si-poor compositions showing the kinetic arrest phenomenon, but rather the phase separation of fully ferromagnetic domains from volume fractions where Mn spins are fluctuating. The more pronounced decrease of the ordered moment at the $3f$ sites on approaching $T_C$, characteristic of the mixed magnetism of these materials, is demonstrated to be driven by a vanishing spin density rather than enhanced spin fluctuations at the $3f$ site. An upper limit of 0.03~$μ_B$ is set for the fluctuating Mn moment at the $3f$ site by the direct detection of a $^{55}$Mn NMR resonance peak in the Mn-rich samples above $T_C$, showing nearly temperature-independent frequency shifts. A sharper secondary peak observed at the same compositions reveals however the disproportionation of a significant $3f$-Mn fraction with negligible hyperfine couplings, which retains its diamagnetic character across the transition, down to the lowest available temperatures. Such a diamagnetic fraction qualitatively accounts for the reduced average $3f$ moment previously reported at large Mn concentrations. △ Less

Submitted 25 April, 2019; originally announced April 2019.

Comments: 12 pages, 13 figures. Submitted to Phys. Rev. B

Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors

Authors: Antonio Di Bartolomeo, Aniello Pelella, Xiaowei Liu, Feng Miao, Maurizio Passacantando, Filippo Giubileo, Alessandro Grillo, Laura Iemmo, Francesca Urban, Shi-Jun Liang

Abstract: A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We observe ambipolar conduction and hysteresis in the transfer curves of the PdSe2 material unprotected and as-exfoliated. We tune the ambipolar conduction and its hysteretic behavior in the air and pure nitrogen environmen… ▽ More A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We observe ambipolar conduction and hysteresis in the transfer curves of the PdSe2 material unprotected and as-exfoliated. We tune the ambipolar conduction and its hysteretic behavior in the air and pure nitrogen environments. The prevailing p-type transport observed at room pressure is reversibly turned into dominant n-type conduction by reducing the pressure, which can simultaneously suppress the hysteresis. The pressure control can be exploited to symmetrize and stabilize the transfer characteristic of the device as required in high-performance logic circuits. The transistor is immune from short channel effects but is affected by trap states with characteristic times in the order of minutes. The channel conductance, dramatically reduced by the electron irradiation during scanning electron microscope imaging, is restored after several minutes anneal at room temperature. The work paves the way toward the exploitation of PdSe2 in electronic devices by providing an experiment-based and deeper understanding of charge transport in PdSe2 transistors subjected to electrical stress and other external agents. △ Less

Submitted 1 February, 2019; originally announced February 2019.

Comments: 21 pages - 5 figure panels

Journal ref: Adv. Funct. Mater. 2019, 29, 1902483

Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures

Authors: Anyuan Gao, Jiawei Lai, Yaojia Wang, Zhen Zhu, Shuchao Qin, Junwen Zeng, Geliang Yu, Naizhou Wang, Wenchao Chen, Tianjun Cao, Weida Hu, Dong Sun, Xianhui Chen, Feng Miao, Yi Shi, Xiaomu Wang

Abstract: Initiating impact ionization of avalanche breakdown essentially requires applying a high electric field in a long active region, hampering carrier-multiplication with high gain, low bias and superior noise performance. Here we report the observation of ballistic avalanche phenomena in sub-MFP scaled vertical indium selenide (InSe)/black phosphorus (BP) heterostructures. The heterojunction is engin… ▽ More Initiating impact ionization of avalanche breakdown essentially requires applying a high electric field in a long active region, hampering carrier-multiplication with high gain, low bias and superior noise performance. Here we report the observation of ballistic avalanche phenomena in sub-MFP scaled vertical indium selenide (InSe)/black phosphorus (BP) heterostructures. The heterojunction is engineered to avalanche photodetectors (APD) and impact ionization transistors, demonstrating ultra-sensitive mid-IR light detection (4 μm wavelength) and ultra-steep subthreshold swing, respectively. These devices show an extremely low avalanche threshold (<1 volt), excellent low noise figures and distinctive density spectral shape. Further transport measurement evidences the breakdown originals from a ballistic avalanche phenomenon, where the sub-MFP BP channel enables both electrons and holes to impact-ionize the lattice and abruptly amplify the current without scattering from the obstacles in a deterministic nature. Our results shed light on the development of advanced photodetectors and efficiently facilitating carriers on the nanoscale. △ Less

Submitted 29 January, 2019; originally announced January 2019.

Comments: To appear on Nature Nanotechnology; 41 pages, 4 figures, 15 supplementary figures

Journal ref: Nature Nanotechnology (2019)

S-type Negative Differential Resistance in Semiconducting Transition-Metal Dichalcogenides

Authors: Miao Wang, Chengyu Wang, Chenchen Wu, Qiao Li, Chen Pan, Cong Wang, Shi-Jun Liang, Feng Miao

Abstract: Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental realization of S-type NDR based on conventional mechanisms poses demanding requirements on materials, which greatly limits their potential applications. Here, we… ▽ More Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental realization of S-type NDR based on conventional mechanisms poses demanding requirements on materials, which greatly limits their potential applications. Here, we experimentally identify that semiconducting transition metal dichalcogenides (TMDs) can host a bipolar S-type NDR devices. Theoretical simulations indicate that the origin of the NDR in these devices arises from a thermal feedback mechanism. Furthermore, we demonstrate the potential applications of TMDs based S-type NDR device in signal processing and neuromorphic electronics. △ Less

Submitted 21 January, 2019; originally announced January 2019.

Comments: To be appear in Advanced Electronic Materials, 9 pages 4 figures

Experimental identification of critical condition for drastically enhancing thermoelectric power factor of two-dimensional layered materials

Authors: Junwen Zeng, Xin He, Shi-Jun Liang, Erfu Liu, Yuanhui Sun, Chen Pan, Yu Wang, Tianjun Cao, Xiaowei Liu, Chengyu Wang, Lili Zhang, Shengnan Yan, Guangxu Su, Zhenlin Wang, Kenji Watanabe, Takashi Taniguchi, David J. Singh, Lijun Zhang, Feng Miao

Abstract: Nano-structuring is an extremely promising path to high performance thermoelectrics. Favorable improvements in thermal conductivity are attainable in many material systems, and theoretical work points to large improvements in electronic properties. However, realization of the electronic benefits in practical materials has been elusive experimentally. A key challenge is that experimental identifica… ▽ More Nano-structuring is an extremely promising path to high performance thermoelectrics. Favorable improvements in thermal conductivity are attainable in many material systems, and theoretical work points to large improvements in electronic properties. However, realization of the electronic benefits in practical materials has been elusive experimentally. A key challenge is that experimental identification of the quantum confinement length, below which the thermoelectric power factor is significantly enhanced, remains elusive due to lack of simultaneous control of size and carrier density. Here we investigate gate tunable and temperature-dependent thermoelectric transport in $γ$ phase indium selenide ($γ$ InSe, n type semiconductor) samples with thickness varying from 7 to 29 nm. This allows us to properly map out dimension and do** space. Combining theoretical and experimental studies, we reveal that the sharper pre-edge of the conduction-band density of states arising from quantum confinement gives rise to an enhancement of the Seebeck coefficient and the power factor in the thinner InSe samples. Most importantly, we experimentally identify the role of the competition between quantum confinement length and thermal de Broglie wavelength in the enhancement of power factor. Our results provide an important and general experimental guideline for optimizing the power factor and improving the thermoelectric performance of two-dimensional layered semiconductors. △ Less

Submitted 28 November, 2018; originally announced November 2018.

Comments: 26 page, 5 figures

Proximity-Induced Superconductivity with Subgap Anomaly in Type II Weyl Semi-Metal WTe2

Authors: Qiao Li, Chaocheng He, Yaojia Wang, Erfu Liu, Miao Wang, Yu Wang, Junwen Zeng, Zecheng Ma, Tianjun Cao, Changjiang Yi, Naizhou Wang, Kenji. Watanabe, Takashi. Taniguchi, Lubing Shao, Youguo Shi, Xianhui Chen, Shi-Jun Liang, Qiang-Hua Wang, Feng Miao

Abstract: Due to the non-trivial topological band structure in type-II Weyl semimetal Tungsten ditelluride (WTe2), unconventional properties may emerge in its superconducting phase. While realizing intrinsic superconductivity has been challenging in the type-II Weyl semimetal WTe2, proximity effect may open an avenue for the realization of superconductivity. Here, we report the observation of proximity-indu… ▽ More Due to the non-trivial topological band structure in type-II Weyl semimetal Tungsten ditelluride (WTe2), unconventional properties may emerge in its superconducting phase. While realizing intrinsic superconductivity has been challenging in the type-II Weyl semimetal WTe2, proximity effect may open an avenue for the realization of superconductivity. Here, we report the observation of proximity-induced superconductivity with a long coherence length along c axis in WTe2 thin flakes based on a WTe2/NbSe2 van der Waals heterostructure. Interestingly, we also observe anomalous oscillations of the differential resistance during the transition from superconducting to normal state. Theoretical calculations show excellent agreement with experimental results, revealing that such a sub-gap anomaly is the intrinsic property of WTe2 in superconducting state induced by the proximity effect. Our findings enrich the understanding of superconducting phase of type-II Weyl semimetals, and pave the way for their future applications in topological quantum computing. △ Less

Submitted 15 November, 2018; originally announced November 2018.

Comments: 20 pages, 4 figures

Anatomy of electrical signals and dc-voltage lineshape in spin torque ferromagnetic resonance

Authors: Yin Zhang, Q. Liu, B. F. Miao, H. F. Ding, X. R. Wang

Abstract: The electrical detection of spin torque ferromagnetic resonance (st-FMR) is becoming a popular method for measuring the spin-Hall angle of heavy metals (HM). However, various sensible analysis on the same material with either the same or different experimental setups yielded different spin-Hall angles with large discrepancy, indicating some missing ingredients in our current understanding of st-FM… ▽ More The electrical detection of spin torque ferromagnetic resonance (st-FMR) is becoming a popular method for measuring the spin-Hall angle of heavy metals (HM). However, various sensible analysis on the same material with either the same or different experimental setups yielded different spin-Hall angles with large discrepancy, indicating some missing ingredients in our current understanding of st-FMR. Here we carry out a careful analysis of electrical signals of the st-FMR in a HM/ferromagnet (HM/FM) bilayer with an arbitrary magnetic anisotropy. The FM magnetization is driven by two radio-frequency (rf) forces: the rf Oersted field generated by an applied rf electric current and the so called rf spin-orbit torque from the spin current flowing perpendicularly from the HM to the FM due to the spin-Hall effect. By using the universal form of the dynamic susceptibility matrix of magnetic materials at the st-FMR, the electrical signals originated from the anisotropic magnetoresistance, anomalous Hall effect and inverse spin-Hall effect are analysed and dc-voltage lineshape near the st-FMR are obtained. Angle-dependence of dc-voltage is given for two setups. A way of experimentally extracting the spin-Hall angle of a HM is proposed. △ Less

Submitted 2 November, 2018; originally announced November 2018.

Journal ref: Phys. Rev. B 99, 064424 (2019)

Negative Photoconductance in van der Waals Heterostructures-Based Floating Gate Phototransistor

Authors: Yu Wang, Erfu Liu, Anyuan Gao, Tianjun Cao, Mingsheng Long, Chen Pan, Lili Zhang, Junwen Zeng, Chenyu Wang, Weida Hu, Shi-Jun Liang, Feng Miao

Abstract: Van der Waals (vdW) heterostructures made of two-dimensional materials have been demonstrated to be versatile architectures for optoelectronic applications due to strong light-matter interactions. However, most of light-controlled phenomena and applications in the vdW heterostructures rely on positive photoconductance (PPC). Negative photoconductance (NPC) has not yet been reported in vdW heterost… ▽ More Van der Waals (vdW) heterostructures made of two-dimensional materials have been demonstrated to be versatile architectures for optoelectronic applications due to strong light-matter interactions. However, most of light-controlled phenomena and applications in the vdW heterostructures rely on positive photoconductance (PPC). Negative photoconductance (NPC) has not yet been reported in vdW heterostructures. Here we report the observation of the NPC in ReS2/h-BN/MoS2 vdW heterostructures-based floating gate phototransistor. The fabricated devices exhibit excellent performance of nonvolatile memory without light illumination. More interestingly, we observe a gate-tunable transition between the PPC and the NPC under the light illumination. The observed NPC phenomenon can be attributed to the charge transfer between floating gate and conduction channel. Furthermore, we show that the control of NPC through light intensity is promising in realization of light-tunable multi-bit memory devices. Our results may enable potential applications in multifunctional memories and optoelectronic devices. △ Less

Submitted 18 August, 2018; originally announced August 2018.

Comments: 21 pages, 4 figures, accepted by ACS Nano

Low-Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning

Authors: Song Hao, Junwen Zeng, Tao Xu, Xin Cong, Chenyu Wang, Chenchen Wu, Yaojia Wang, Xiaowei Liu, Tianjun Cao, Guangxu Su, Lanxin Jia, Zhangting Wu, Qian Lin, Lili Zhang, Shengnan Yan, Mengfan Guo, Zhenlin Wang, **heng Tan, Litao Sun, Zhenhua Ni, Shi-Jun Liang, Xinyi Cui, Feng Miao

Abstract: Metallic transition metal dichalcogenides (TMDs) have exhibited various exotic physical properties and hold the promise of novel optoelectronic and topological devices applications. However, the synthesis of metallic TMDs is based on gas-phase methods and requires high temperature condition. As an alternative to the gas-phase synthetic approach, lower temperature eutectic liquid-phase synthesis pr… ▽ More Metallic transition metal dichalcogenides (TMDs) have exhibited various exotic physical properties and hold the promise of novel optoelectronic and topological devices applications. However, the synthesis of metallic TMDs is based on gas-phase methods and requires high temperature condition. As an alternative to the gas-phase synthetic approach, lower temperature eutectic liquid-phase synthesis presents a very promising approach with the potential for larger-scale and controllable growth of high-quality thin metallic TMDs single crystals. Herein, we report the first realization of low-temperature eutectic liquid-phase synthesis of type-II Dirac semimetal PtTe2 single crystals with thickness ranging from 2 to 200 nm. The electrical measurement of synthesized PtTe2 reveals a record-high conductivity of as high as 3.3*106 S/m at room temperature. Besides, we experimentally identify the weak antilocalization behavior in the type-II Dirac semimetal PtTe2 for the first time. Furthermore, we develop a simple and general strategy to obtain atomically-thin PtTe2 crystal by thinning as-synthesized bulk samples, which can still retain highly crystalline and exhibits excellent electric conductivity. Our results of controllable and scalable low-temperature eutectic liquid-phase synthesis and layer-by-layer thinning of high-quality thin PtTe2 single crystals offer a simple and general approach for obtaining different thickness metallic TMDs with high-melting point transition metal. △ Less

Submitted 7 August, 2018; originally announced August 2018.

Journal ref: Advanced Functional Materials 2018, 1803746

Gate-Induced Interfacial Superconductivity in 1T-SnSe2

Authors: Junwen Zeng, Erfu Liu, Yajun Fu, Zhuoyu Chen, Chen Pan, Chenyu Wang, Miao Wang, Yaojia Wang, Kang Xu, Songhua Cai, Xingxu Yan, Yu Wang, Xiaowei Liu, Peng Wang, Shi-Jun Liang, Yi Cui, Harold Y. Hwang, Hongtao Yuan, Feng Miao

Abstract: Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides a… ▽ More Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. Here, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe2, a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature Tc around 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on 1) a 2D Tinkham description of the angle-dependent upper critical field, 2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane approaching zero temperature was found to be 2-3 times higher than the Pauli limit, which might be related to an electric field-modulated spin-orbit interaction. Such results provide a new perspective to expand the material matrix available for gate-induced 2D superconductivity and the fundamental understanding of interfacial superconductivity. △ Less

Submitted 2 February, 2018; originally announced February 2018.

Comments: 18 pages, 4 figures, accepted by Nano Letters

Analog Circuit Applications based on Ambipolar Graphene/MoTe2 Vertical Transistors

Authors: Chen Pan, Yajun Fu, Jiaxin Wang, Junwen Zeng, Guangxu Su, Mingsheng Long, Erfu Liu, Chenyu Wang, Anyuan Gao, Miao Wang, Yu Wang, Zhenlin Wang, Shi-Jun Liang, Ru Huang, Feng Miao

Abstract: The current integrated circuit (IC) technology based on conventional MOS-FET (metal-oxide-semiconductor field-effect transistor) is approaching the limit of miniaturization with increasing demand on energy. Several analog circuit applications based on graphene FETs have been demonstrated with less components comparing to the conventional technology. However, low on/off current ratio caused by the… ▽ More The current integrated circuit (IC) technology based on conventional MOS-FET (metal-oxide-semiconductor field-effect transistor) is approaching the limit of miniaturization with increasing demand on energy. Several analog circuit applications based on graphene FETs have been demonstrated with less components comparing to the conventional technology. However, low on/off current ratio caused by the semimetal nature of graphene has severely hindered its practical applications. Here we report a graphene/MoTe2 van der Waals (vdW) vertical transistor with V-shaped ambipolar field effect transfer characteristics to overcome this challenge. Investigations on temperature dependence of transport properties reveal that gate tunable asymmetric barriers of the devices are account for the ambipolar behaviors. Furthermore, to demonstrate the analog circuit applications of such vdW vertical transistors, we successfully realized output polarity controllable (OPC) amplifier and frequency doubler. These results enable vdW heterojunction based electronic devices to open up new possibilities for wide perspective in telecommunication field. △ Less

Submitted 5 January, 2018; originally announced January 2018.

Comments: To appear on Advanced Electronics Materials; 26 pages, 5 figures, 7 supplementary figures

Journal ref: Advanced Electronics Materials 1700662 1-7 (2018)

Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices

Authors: Minhao Zhang, Huaiqiang Wang, Kejun Mu, Pengdong Wang, Wei Niu, Shuai Zhang, Guiling Xiao, Yequan Chen, Tong Tong, Dongzhi Fu, Xuefeng Wang, Haijun Zhang, Fengqi Song, Feng Miao, Zhe Sun, Zhengcai Xia, Xinran Wang, Yongbing Xu, Baigeng Wang, Dingyu Xing, Rong Zhang

Abstract: We report the study of a tri-axial vector magnetoresistance (MR) in nonmagnetic (Bi1-xInx)2Se3 nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a -3%: -1%: 225% ratio at 2 K. Through both the thickness and composition-dependent magnetotransport measuremen… ▽ More We report the study of a tri-axial vector magnetoresistance (MR) in nonmagnetic (Bi1-xInx)2Se3 nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a -3%: -1%: 225% ratio at 2 K. Through both the thickness and composition-dependent magnetotransport measurements, we show that the in-plane negative MR is due to the topological phase transition enhanced intersurface coupling near the topological critical point. Our devices suggest the great potential for room-temperature spintronic applications, for example, vector magnetic sensors. △ Less

Submitted 3 January, 2018; originally announced January 2018.

Comments: 23 pages, 12 figures

Journal ref: ACS Nano 12, 1537-1543 (2018)

Robust memristors based on layered two-dimensional materials

Authors: Miao Wang, Songhua Cai, Chen Pan, Chenyu Wang, Xiaojuan Lian, Ye Zhuo, Kang Xu, Tianjun Cao, Xiaoqing Pan, Baigeng Wang, Shijun Liang, J. Joshua Yang, Peng Wang, Feng Miao

Abstract: Van der Waals heterostructure based on layered two-dimensional (2D) materials offers unprecedented opportunities to create materials with atomic precision by design. By combining superior properties of each component, such heterostructure also provides possible solutions to address various challenges of the electronic devices, especially those with vertical multilayered structures. Here, we report… ▽ More Van der Waals heterostructure based on layered two-dimensional (2D) materials offers unprecedented opportunities to create materials with atomic precision by design. By combining superior properties of each component, such heterostructure also provides possible solutions to address various challenges of the electronic devices, especially those with vertical multilayered structures. Here, we report the realization of robust memristors for the first time based on van der Waals heterostructure of fully layered 2D materials (graphene/MoS2-xOx/graphene) and demonstrate a good thermal stability lacking in traditional memristors. Such devices have shown excellent switching performance with endurance up to 107 and a record-high operating temperature up to 340oC. By combining in situ high-resolution TEM and STEM studies, we have shown that the MoS2-xOx switching layer, together with the graphene electrodes and their atomically sharp interfaces, are responsible for the observed thermal stability at elevated temperatures. A well-defined conduction channel and a switching mechanism based on the migration of oxygen ions were also revealed. In addition, the fully layered 2D materials offer a good mechanical flexibility for flexible electronic applications, manifested by our experimental demonstration of a good endurance against over 1000 bending cycles. Our results showcase a general and encouraging pathway toward engineering desired device properties by using 2D van der Waals heterostructures. △ Less

Submitted 1 January, 2018; originally announced January 2018.

Comments: To appear on Nature Electronics; 31 pages, 6 figures, 8 supplementary figures

Journal ref: Nature Electronics 1, 130 (2018)

Gated Tuned Superconductivity and Phonon Softening in Mono- and Bilayer MoS$_2$

Authors: Yajun Fu, Erfu Liu, Hongtao Yuan, Peizhe Tang, Biao Lian, Gang Xu, Junwen Zeng, Zhuoyu Chen, Yaojia Wang, Wei Zhou, Kang Xu, Anyuan Gao, Chen Pan, Miao Wang, Baigeng Wang, Shou-Cheng Zhang, Yi Cui, Harold Y. Hwang, Feng Miao

Abstract: Superconductors at the atomic two-dimensional (2D) limit are the focus of an enduring fascination in the condensed matter community. This is because, with reduced dimensions, the effects of disorders, fluctuations, and correlations in superconductors become particularly prominent at the atomic 2D limit; thus such superconductors provide opportunities to tackle tough theoretical and experimental ch… ▽ More Superconductors at the atomic two-dimensional (2D) limit are the focus of an enduring fascination in the condensed matter community. This is because, with reduced dimensions, the effects of disorders, fluctuations, and correlations in superconductors become particularly prominent at the atomic 2D limit; thus such superconductors provide opportunities to tackle tough theoretical and experimental challenges. Here, based on the observation of ultrathin 2D superconductivity in mono- and bilayer molybdenum disulfide (MoS$_2$) with electric-double-layer (EDL) gating, we found that the critical sheet carrier density required to achieve superconductivity in a monolayer MoS$_2$ flake can be as low as 0.55*10$^{14}$cm$^{-2}$, which is much lower than those values in the bilayer and thicker cases in previous report and also our own observations. Further comparison of the phonon dispersion obtained by ab initio calculations indicated that the phonon softening of the acoustic modes around the M point plays a key role in the gate-induced superconductivity within the Bardeen-Cooper Schrieffer (BCS) theory framework. This result might help enrich the understanding of 2D superconductivity with EDL gating. △ Less

Submitted 16 October, 2017; v1 submitted 15 October, 2017; originally announced October 2017.

Journal ref: npj Quantum Materials 2, Article number: 52 (2017)

Cleavage Tendency of Anisotropic Two Dimensional Materials: ReX2 (X=S, Se) and WTe2

Authors: Haifeng Wang, Erfu Liu, Yu Wang, Bo Wan, Ching-Hwa Ho, F. Miao, X. G. Wan

Abstract: With unique distorted 1T structure and the associated in-plane anisotropic properties, mono- and few-layer ReX2 (X=S, Se) have recently attracted particular interest. Based on experiment and first-principles calculations, we investigate the fracture behavior of ReX2. We find that the cleaved edges of ReX2 flakes usually form an angle of ~120° or ~60°. In order to understand such phenomenon, we per… ▽ More With unique distorted 1T structure and the associated in-plane anisotropic properties, mono- and few-layer ReX2 (X=S, Se) have recently attracted particular interest. Based on experiment and first-principles calculations, we investigate the fracture behavior of ReX2. We find that the cleaved edges of ReX2 flakes usually form an angle of ~120° or ~60°. In order to understand such phenomenon, we perform comprehensive investigations on the uniaxial tensile stress-strain relation of monolayer and multi-layer ReX2 sheets. Our numerical calculation shows that the particular cleaved edges of ReX2 flakes are caused by unique anisotropic ultimate tensile strengths and critical strains. We also calculate the stress-strain relation of WTe2, which explains why their cleaved edges are not corresponding to the principle axes. Our proposed mechanism about the fracture angle has also been supported by the calculated cleavage energies and surface energies for different edge surfaces. △ Less

Submitted 14 September, 2017; originally announced September 2017.

Journal ref: Phys. Rev. B 96, 165418 (2017)

Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-do**

Authors: Yajun Fu, Mingsheng Long, Anyuan Gao, Yu Wang, Chen Pan, Xiaowei Liu, Junwen Zeng, Kang Xu, Lili Zhang, Erfu Liu, Weida Hu, Xiaomu Wang, Feng Miao

Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently emerged as promising candidates for future electronics and optoelectronics. While most of TMDs are intrinsic n-type semiconductors due to electron donating which originates from chalcogen vacancies, obtaining intrinsic high-quality p-type semiconducting TMDs has been challenging. Here, we report an experimental approach to… ▽ More Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently emerged as promising candidates for future electronics and optoelectronics. While most of TMDs are intrinsic n-type semiconductors due to electron donating which originates from chalcogen vacancies, obtaining intrinsic high-quality p-type semiconducting TMDs has been challenging. Here, we report an experimental approach to obtain intrinsic p-type Tungsten (W)-based TMDs by substitutional Ta-do**. The obtained few-layer Ta-doped WSe2 (Ta0.01W0.99Se2) field-effect transistor (FET) devices exhibit competitive p-type performances, including ~10^6 current on/off at room temperature. We also demonstrate high quality van der Waals (vdW) p-n heterojunctions based on Ta0.01W0.99Se2/MoS2 structure, which exhibit nearly ideal diode characteristics (with an ideality factor approaching 1 and a rectification ratio up to 10^5) and excellent photodetecting performance. Our study suggests that substitutional Ta-do** holds great promise to realize intrinsic p-type W-based TMDs for future electronic and photonic applications. △ Less

Submitted 17 July, 2017; originally announced July 2017.

Comments: To appear in Applied Physics Letters; 31 pages, 4 pages, 7 supplementary figures; submitted on May 1st, 2017

Room-temperature high detectivity mid-infrared photodetectors based on black arsenic phosphorus

Authors: Mingsheng Long, Anyuan Gao, Peng Wang, Hui Xia, Claudia Ott, Chen Pan, Yajun Fu, Erfu Liu, Xiaoshuang Chen, Wei Lu, Tom Nilges, Jianbin Xu, Xiaomu Wang, Weida Hu, Feng Miao

Abstract: The mid-infrared (MIR) spectral range, pertaining to important applications such as molecular 'fingerprint' imaging, remote sensing, free space telecommunication and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high cost phot… ▽ More The mid-infrared (MIR) spectral range, pertaining to important applications such as molecular 'fingerprint' imaging, remote sensing, free space telecommunication and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high cost photodetectors requiring cryogenic operation. We report black arsenic-phosphorus-based long wavelength infrared photodetectors with room temperature operation up to 8.2 um, entering the second MIR atmospheric transmission window. Combined with a van der Waals heterojunction, room temperature specific detectivity higher than 4.9*10^9 Jones was obtained in the 3-5 um range. The photodetector works in a zero-bias photovoltaic mode, enabling fast photoresponse and low dark noise. Our van der Waals heterojunction photodector not only exemplify black arsenic-phosphorus as a promising candidate for MIR opto-electronic applications, but also pave the way for a general strategy to suppress 1/f noise in photonic devices. △ Less

Submitted 2 May, 2017; originally announced May 2017.

Comments: To appear in Science Advances; 27 pages, 3 figures, 9 supplementary figures; submitted on Feb. 24th, 2017

Journal ref: Science Advances 3: e1700589 (2017)

Pressure-induced metallization and superconducting phase in ReS2

Authors: Dawei Zhou, Yonghui Zhou, Chunying Pu, Xuliang Chen, Pengchao Lu, Xuefei Wang, Chao An, Ying Zhou, Feng Miao, Ching-Hwa Ho, Jian Sun, Zhaorong Yang, Dingyu Xing

Abstract: Among the family of TMDs, ReS2 takes a special position, which crystalizes in a unique distorted low-symmetry structure at ambient conditions. The interlayer interaction in ReS2 is rather weak, thus its bulk properties are similar to that of monolayer. However, how does compression change its structure and electronic properties is unknown so far. Here using ab initio crystal structure searching te… ▽ More Among the family of TMDs, ReS2 takes a special position, which crystalizes in a unique distorted low-symmetry structure at ambient conditions. The interlayer interaction in ReS2 is rather weak, thus its bulk properties are similar to that of monolayer. However, how does compression change its structure and electronic properties is unknown so far. Here using ab initio crystal structure searching techniques, we explore the high-pressure phase transitions of ReS2 extensively and predict two new high-pressure phases. The ambient pressure phase transforms to a "distorted-1T" structure at very low pressure and then to a tetragonal I41/amd structure at around 90 GPa. The "distorted-1T" structure undergoes a semiconductor-metal transition (SMT) at around 70 GPa with a band overlap mechanism. Electron-phonon calculations suggest that the I41/amd structure is superconducting and has a critical superconducting temperature of about 2 K at 100 GPa. We further perform high-pressure electrical resistance measurements up to 102 GPa. Our experiments confirm the SMT and the superconducting phase transition of ReS2 under high pressure. These experimental results are in good agreement with our theoretical predictions. △ Less

Submitted 13 February, 2017; originally announced February 2017.

Comments: 25 pages, 6 figures, accepted by npj Quantum Materials

Journal ref: npj Quantum Materials 2, 19 (2017)

Photodetecting and Light-Emitting Devices Based on Two Dimensional Materials

Authors: Yuanfang Yu, Feng Miao, Jun He, Zhenhua Ni

Abstract: Two dimensional (2D) materials, e.g. graphene, transition metal dichalcogenides (TMDs), black phosphorus (BP), have demonstrated fascinating electrical and optical characteristics and exhibited great potential in optoelectronic applications. High performance and multifunctional devices were achieved by employing diverse designs of architectures, such as hybrid systems with nanostructured materials… ▽ More Two dimensional (2D) materials, e.g. graphene, transition metal dichalcogenides (TMDs), black phosphorus (BP), have demonstrated fascinating electrical and optical characteristics and exhibited great potential in optoelectronic applications. High performance and multifunctional devices were achieved by employing diverse designs of architectures, such as hybrid systems with nanostructured materials, bulk semiconductors and organics, forming 2D heterostructures. In this review, we mainly discuss the recent progresses of 2D materials in high responsive photodetectors, light-emitting devices and single photon emitters. Hybrid systems and van der Waals heterostructures based devices are emphasized, which exhibit great potential in state-of-the-art applications. △ Less

Submitted 7 November, 2016; originally announced November 2016.

Comments: 31 pages, 11 figures, to appear in Chinese Physics B

Journal ref: Chinese Physics B 26,036801 (2017)

Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2

Authors: Yaojia Wang, Erfu Liu, Huimei Liu, Yiming Pan, Longqiang Zhang, Junwen Zeng, Yajun Fu, Miao Wang, Kang Xu, Zhong Huang, Zhenlin Wang, Haizhou Lu, Dingyu Xing, Baigeng Wang, Xiangang Wan, Feng Miao

Abstract: The progress in exploiting new electronic materials and devices has been a major driving force in solid-state physics. As a new state of matter, a Weyl semimetal (WSM), particularly a type-II WSM, hosts Weyl fermions as emergent quasiparticles and may harbor novel electrical transport properties because of the exotic Fermi surface. Nevertheless, such a type-II WSM material has not been experimenta… ▽ More The progress in exploiting new electronic materials and devices has been a major driving force in solid-state physics. As a new state of matter, a Weyl semimetal (WSM), particularly a type-II WSM, hosts Weyl fermions as emergent quasiparticles and may harbor novel electrical transport properties because of the exotic Fermi surface. Nevertheless, such a type-II WSM material has not been experimentally observed in nature. In this work, by performing systematic magneto-transport studies on thin films of a predicted material candidate WTe2, we observe notable angle-sensitive (between the electric and magnetic fields) negative longitudinal magnetoresistance (MR), which can likely be attributed to the chiral anomaly in WSM. This phenomenon also exhibits strong planar orientation dependence with the absence of negative longitudinal MR along the tungsten chains (a axis), which is consistent with the distinctive feature of a type-II WSM. By applying a gate voltage, we demonstrate that the Fermi energy can be tuned through the Weyl points via the electric field effect; this is the first report of controlling the unique transport properties in situ in a WSM system. Our results have important implications for investigating simulated quantum field theory in solid-state systems and may open opportunities for implementing new types of electronic applications, such as field-effect chiral electronic devices. △ Less

Submitted 17 August, 2016; originally announced August 2016.

Comments: accepted by Nature Communications; 27 pages, 3 figures, 9 supplementary figures; submitted on May 1st, 2016

Journal ref: Nature Communications 7, 13142 (2016)

The Ideal Tensile Strength and Phonon Instability of Borophene

Authors: Haifeng Wang, Qingfang Li, Yan Gao, F. Miao, Xiang-Feng Zhou, X. G. Wan

Abstract: Very recently, two-dimensional(2D) boron sheets (borophene) with rectangular structure has been grown successfully on single crystal Ag(111) substrates.The fabricated boroprene is predicted to have unusual mechanical properties. We performed first-principle calculations to investigate the mechanical properties of the monolayer borophene, including ideal tensile strength and critical strain. It was… ▽ More Very recently, two-dimensional(2D) boron sheets (borophene) with rectangular structure has been grown successfully on single crystal Ag(111) substrates.The fabricated boroprene is predicted to have unusual mechanical properties. We performed first-principle calculations to investigate the mechanical properties of the monolayer borophene, including ideal tensile strength and critical strain. It was found that monolayer borophene can withstand stress up to 20.26 N/m and 12.98 N/m in a and b directions, respectively.However, its critical strain was found to be small. In a direction, the critical value is only 8%, which, to the best of our knowledge, is the lowest among all studied 2D materials.Our numerical results show that the tensile strain applied in b direction enhances the bucking height of borophene resulting in an out-of-plane negative Poisson's ratio, which makes the boron sheet show superior mechanical flexibility along b direction.The failure mechanism and phonon instability of monolayer borophene were also explored. △ Less

Submitted 30 July, 2016; v1 submitted 1 February, 2016; originally announced February 2016.

Journal ref: New J. Phys. 18 (2016) 073016

Broadband Photovoltaic Detectors based on an Atomically Thin Heterostructure

Authors: Mingsheng Long, Erfu Liu, Peng Wang, Anyuan Gao, Wei Luo, Baigeng Wang, Junwen Zeng, Yajun Fu, Kang Xu, Wei Zhou, Yangyang Lv, Shuhua Yao, Minghui Lu, Yanfeng Chen, Zhenhua Ni, Yumeng You, Xueao Zhang, Shiqiao Qin, Yi Shi, Weida Hu, Dingyu Xing, Feng Miao

Abstract: Van der Waals junctions of two-dimensional materials with an atomically sharp interface open up unprecedented opportunities to design and study functional heterostructures. Semiconducting transition metal dichalcogenides have shown tremendous potential for future applications due to their unique electronic properties and strong light-matter interaction. However, many important optoelectronic appli… ▽ More Van der Waals junctions of two-dimensional materials with an atomically sharp interface open up unprecedented opportunities to design and study functional heterostructures. Semiconducting transition metal dichalcogenides have shown tremendous potential for future applications due to their unique electronic properties and strong light-matter interaction. However, many important optoelectronic applications, such as broadband photodetection, are severely hindered by their limited spectral range and reduced light absorption. Here, we present a p-g-n heterostructure formed by sandwiching graphene with a gapless bandstructure and wide absorption spectrum in an atomically thin p-n junction to overcome these major limitations. We have successfully demonstrated a MoS2-graphene-WSe2 heterostructure for broadband photodetection in the visible to short-wavelength infrared range at room temperature that exhibits competitive device performance, including a specific detectivity of up to 1011 Jones in the near-infrared region. Our results pave the way toward the implementation of atomically thin heterostructures for broadband and sensitive optoelectronic applications. △ Less

Submitted 8 January, 2016; originally announced January 2016.

Comments: Submitted to Nano Letters; 25 pages, 4 figures, 7 supplementary figures

Journal ref: Nano Letters 16, 2254 (2016)

High responsivity phototransistors based on few-layer ReS2 for weak signal detection

Authors: Erfu Liu, Mingsheng Long, Junwen Zeng, Wei Luo, Yaojia Wang, Yiming Pan, Wei Zhou, Baigeng Wang, Weida Hu, Zhenhua Ni, Yumeng You, Xueao Zhang, Shiqiao Qin, Yi Shi, K. Watanabe, T. Taniguchi, Hongtao Yuan, Harold Y. Hwang, Yi Cui, Feng Miao, Dingyu Xing

Abstract: Two-dimensional transition metal dichalcogenides are emerging with tremendous potential in many optoelectronic applications due to their strong light-matter interactions. To fully explore their potential in photoconductive detectors, high responsivity and weak signal detection are required. Here, we present high responsivity phototransistors based on few-layer rhenium disulfide (ReS2). Depending o… ▽ More Two-dimensional transition metal dichalcogenides are emerging with tremendous potential in many optoelectronic applications due to their strong light-matter interactions. To fully explore their potential in photoconductive detectors, high responsivity and weak signal detection are required. Here, we present high responsivity phototransistors based on few-layer rhenium disulfide (ReS2). Depending on the back gate voltage, source drain bias and incident optical light intensity, the maximum attainable photoresponsivity can reach as high as 88,600 A W-1, which is a record value compared to other two-dimensional materials with similar device structures and two orders of magnitude higher than that of monolayer MoS2. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement due to the existence of trap states in the few-layer ReS2 flakes. It further enables the detection of weak signals, as successfully demonstrated with weak light sources including a lighter and limited fluorescent lighting. Our studies underscore ReS2 as a promising material for future sensitive optoelectronic applications. △ Less

Submitted 21 December, 2015; originally announced December 2015.

Comments: Accepted by Advanced Functional Materials; 25 pages, 4 figures, 2 supplementary figures

Journal ref: Advanced Functional Materials 26, 1938 (2016)

The positive piezoconductive effect in graphene

Authors: Kang Xu, Ke Wang, Wei Zhao, Wenzhong Bao, Erfu Liu, Yafei Ren, Miao Wang, Yajun Fu, Junwen Zeng, Zhaoguo Li, Wei Zhou, Fengqi Song, Xinran Wang, Yi Shi, Xiangang Wan, Michael S. Fuhrer, Baigeng Wang, Zhenhua Qiao, Feng Miao, Dingyu Xing

Abstract: As the thinnest conductive and elastic material, graphene is expected to play a crucial role in post-Moore era. Besides applications on electronic devices, graphene has shown great potential for nano-electromechanical systems. While interlayer interactions play a key role in modifying the electronic structures of layered materials, no attention has been given to their impact on electromechanical p… ▽ More As the thinnest conductive and elastic material, graphene is expected to play a crucial role in post-Moore era. Besides applications on electronic devices, graphene has shown great potential for nano-electromechanical systems. While interlayer interactions play a key role in modifying the electronic structures of layered materials, no attention has been given to their impact on electromechanical properties. Here we report the positive piezoconductive effect observed in suspended bi- and multi-layer graphene. The effect is highly layer number dependent and shows the most pronounced response for tri-layer graphene. The effect, and its dependence on the layer number, can be understood as resulting from the strain-induced competition between interlayer coupling and intralayer transport, as confirmed by the numerical calculations based on the non-equilibrium Green's function method. Our results enrich the understanding of graphene and point to layer number as a powerful tool for tuning the electromechanical properties of graphene for future applications. △ Less

Submitted 21 July, 2015; originally announced July 2015.

Comments: Accepted by Nature Communications; 36 pages, 4 figures, 11 supplementary figures

Journal ref: Nature Communications 6, 8119 (2015)

Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors

Authors: Erfu Liu, Yajun Fu, Yaojia Wang, Yanqing Feng, Huimei Liu, Xiangang Wan, Wei Zhou, Baigeng Wang, Lubin Shao, Ching-Hwa Ho, Ying-Sheng Huang, Zhengyi Cao, Laiguo Wang, Aidong Li, Junwen Zeng, Fengqi Song, Xinran Wang, Yi Shi, Hongtao Yuan, Harold Y. Hwang, Yi Cui, Feng Miao, Dingyu Xing

Abstract: Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as top candidates for post-silicon electronics. While most of 2D TMDs exhibit isotropic behavior, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here, we present atomically thin rhenium disulfide (ReS2) flakes with a unique d… ▽ More Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as top candidates for post-silicon electronics. While most of 2D TMDs exhibit isotropic behavior, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here, we present atomically thin rhenium disulfide (ReS2) flakes with a unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated mono- and few-layer ReS2 field effect transistors (FETs), which exhibit competitive performance with large current on/off ratios (~107) and low subthreshold swings (100 mV dec-1). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known 2D semiconducting materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS2 anisotropic FETs, suggesting the promising implementation of large-scale 2D logic circuits. Our results underscore the unique properties of 2D semiconducting materials with low crystal symmetry for future electronic applications. △ Less

Submitted 14 April, 2015; v1 submitted 9 March, 2015; originally announced March 2015.

Comments: accepted by Nature Communications; 23 pages, 4 figures

Journal ref: Nat. Commun. 6, 6991 (2015)

Raman vibrational spectra of bulk to monolayer ReS2 with lower symmetry

Authors: Yanqing Feng, Wei Zhou, Yaojia Wang, Jian Zhou, Erfu Liu, Yajun Fu, Zhenhua Ni, Xinglong Wu, Hongtao Yuan, Feng Miao, Baigeng Wang, Xiangang Wan, Dingyu Xing

Abstract: Lattice structure and symmetry of two-dimensional (2D) layered materials are of key importance to their fundamental mechanical, thermal, electronic and optical properties. Raman spectroscopy, as a convenient and nondestructive tool, however has its limitations on identifying all symmetry allowing Raman modes and determining the corresponding crystal structure of 2D layered materials with high symm… ▽ More Lattice structure and symmetry of two-dimensional (2D) layered materials are of key importance to their fundamental mechanical, thermal, electronic and optical properties. Raman spectroscopy, as a convenient and nondestructive tool, however has its limitations on identifying all symmetry allowing Raman modes and determining the corresponding crystal structure of 2D layered materials with high symmetry like graphene and MoS2. Due to lower structural symmetry and extraordinary weak interlayer coupling of ReS2, we successfully identified all 18 first-order Raman active modes for bulk and monolayer ReS2. Without van der Waals (vdW) correction, our local density approximation (LDA) calculations successfully reproduce all the Raman modes. Our calculations also suggest no surface reconstruction effect and the absence of low frequency rigid-layer Raman modes below 100 cm-1. Combining with Raman and LDA thus provides a general approach for studying the vibrational and structural properties of 2D layered materials with lower symmetry. △ Less

Submitted 23 July, 2015; v1 submitted 10 February, 2015; originally announced February 2015.

Comments: accepted by Physical Review B; 23 pages, 3 figures, 4 tables

Journal ref: Physical Review B 92, 054110 (2015)

Thermal-history dependent magnetoelastic transition in (Mn,Fe)2(P,Si)

Authors: X. F. Miao, L. Caron, Z. Gercsi, A. Daoud-Aladine, N. H. van Dijk, K. G. Sandeman, E. Bruck

Abstract: The thermal-history dependence of the magnetoelastic transition in (Mn,Fe)2(P,Si) compounds has been investigated using high-resolution neutron diffraction. As-prepared samples display a large difference in paramagnetic-ferromagnetic (PM-FM) transition temperature compared to cycled samples. The initial metastable state transforms into a lower-energy stable state when the as-prepared sample crosse… ▽ More The thermal-history dependence of the magnetoelastic transition in (Mn,Fe)2(P,Si) compounds has been investigated using high-resolution neutron diffraction. As-prepared samples display a large difference in paramagnetic-ferromagnetic (PM-FM) transition temperature compared to cycled samples. The initial metastable state transforms into a lower-energy stable state when the as-prepared sample crosses the PM-FM transition for the first time. This additional transformation is irreversible around the transition temperature and increases the energy barrier which needs to be overcome through the PM-FM transition. Consequently the transition temperature on first cooling is found to be lower than on subsequent cycles characterizing the so-called virgin effect. High temperature annealing can restore the cycled sample to the high-temperature metastable state, which leads to the recovery of the virgin effect. A model is proposed to interpret the formation and recovery of the virgin effect. △ Less

Submitted 29 December, 2014; originally announced December 2014.

Two-dimensional Quasi-Freestanding Molecular Crystals for High-Performance Organic Field-Effect Transistors

Authors: Daowei He, Yuhan Zhang, Qisheng Wu, Rui Xu, Haiyan Nan, Junfang Liu, Jianjun Yao, Zilu Wang, Shijun Yuan, Yun Li, Yi Shi, **lan Wang, Zhenhua Ni, Lin He, Feng Miao, Fengqi Song, Hangxun Xu, K. Watanabe, T. Taniguchi, Jian-Bin Xu, Xinran Wang

Abstract: Two-dimensional atomic crystals are extensively studied in recent years due to their exciting physics and device applications. However, a molecular counterpart, with scalable processability and competitive device performance, is still challenging. Here, we demonstrate that high-quality few-layer dioctylbenzothienobenzothiophene molecular crystals can be grown on graphene or boron nitride substrate… ▽ More Two-dimensional atomic crystals are extensively studied in recent years due to their exciting physics and device applications. However, a molecular counterpart, with scalable processability and competitive device performance, is still challenging. Here, we demonstrate that high-quality few-layer dioctylbenzothienobenzothiophene molecular crystals can be grown on graphene or boron nitride substrate via van der Waals epitaxy, with precisely controlled thickness down to monolayer, large-area single crystal, low process temperature and patterning capability. The crystalline layers are atomically smooth and effectively decoupled from the substrate due to weak van der Waals interactions, affording a pristine interface for high-performance organic transistors. As a result, monolayer dioctylbenzothienobenzothiophene molecular crystal field-effect transistors on boron nitride show record-high carrier mobility up to 10cm2V-1s-1 and aggressively scaled saturation voltage around 1V. Our work unveils an exciting new class of two-dimensional molecular materials for electronic and optoelectronic applications. △ Less

Submitted 27 August, 2014; originally announced August 2014.

Comments: 68 pages, 4 figures

Journal ref: Nature Communications 5, 5162 (2014)

Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding

Authors: Haiyan Nan, Zilu Wang, Wenhui Wang, Zheng Liang, Yan Lu, Qian Chen, Daowei He, **heng Tan, Feng Miao, Xinran Wang, **lan Wang, Zhenhua Ni

Abstract: We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through defect engineering and oxygen bonding. Micro- PL and Raman images clearly reveal that the PL enhancement occurs at cracks/defects formed during high temperature vacuum annealing. The PL enhancement at crack/defect sites could be as high as thousands of times after considering the laser spot size. The main reasons of… ▽ More We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through defect engineering and oxygen bonding. Micro- PL and Raman images clearly reveal that the PL enhancement occurs at cracks/defects formed during high temperature vacuum annealing. The PL enhancement at crack/defect sites could be as high as thousands of times after considering the laser spot size. The main reasons of such huge PL enhancement include: (1) the oxygen chemical adsorption induced heavy p do** and the conversion from trion to exciton; (2) the suppression of non-radiative recombination of excitons at defect sites as verified by low temperature PL measurements. First principle calculations reveal a strong binding energy of ~2.395 eV for oxygen molecule adsorbed on an S vacancy of MoS2. The chemical adsorbed oxygen also provides a much more effective charge transfer (0.997 electrons per O2) compared to physical adsorbed oxygen on ideal MoS2 surface. We also demonstrate that the defect engineering and oxygen bonding could be easily realized by oxygen plasma irradiation. X-ray photoelectron spectroscopy further confirms the formation of Mo-O bonding. Our results provide a new route for modulating the optical properties of two dimensional semiconductors. The strong and stable PL from defects sites of MoS2 may have promising applications in optoelectronic devices. △ Less

Submitted 16 May, 2014; originally announced May 2014.

Comments: 23 pages, 9 figures, to appear in ACS Nano

Aging the Cu-doped Bi2Te3 crystals for the topological transport and its atomic tunneling-clustering dynamics

Authors: Taishi Chen, Qian Chen, Koen Schouteden, Wenkai Huang, Xuefeng Wang, Zhe Li, Feng Miao, Xinran Wang, Zhaoguo Li, Bo Zhao, Shaochun Li, Fengqi Song, **lan Wang, Chris van Haesendonck, Baigeng Wang, Guanghou Wang

Abstract: We report on the observation of the two-dimensional weak antilocalization in (Cu0.1Bi0.9)2Te3.06 crystals relying on measurements of the magnetoresistance in a tilted field. The dephasing analysis and scanning tunneling spectroscopy corroborate the transport of the topological surface states (SS). The SSs contribute 3.3% conductance in 30μm-thick material and become dominant in the 100nm-thick fla… ▽ More We report on the observation of the two-dimensional weak antilocalization in (Cu0.1Bi0.9)2Te3.06 crystals relying on measurements of the magnetoresistance in a tilted field. The dephasing analysis and scanning tunneling spectroscopy corroborate the transport of the topological surface states (SS). The SSs contribute 3.3% conductance in 30μm-thick material and become dominant in the 100nm-thick flakes. Such optimized topological SS transport is achieved by an intense aging process, when the bulk conductance is suppressed by four orders of magnitude in the long period. Scanning tunneling microscopy reveals that Cu atoms are initially inside the quintuple layers and migrate to the layer gaps to form Cu clusters during the aging. In combination with first-principles calculations, an atomic tunneling-clustering procedure across a diffusion barrier of 0.57eV is proposed. △ Less

Submitted 26 February, 2014; v1 submitted 2 January, 2014; originally announced January 2014.

Electrical Detection of Direct and Alternating Spin Current Injected from a Ferromagnetic Insulator into a Ferromagnetic Metal

Authors: P. Hyde, Lihui Bai, D. M. J. Kumar, B. W. Southern, S. Y. Huang, B. F. Miao, C. L. Chien, C. -M. Hu

Abstract: We report room temperature electrical detection of spin injection from a ferromagnetic insulator (YIG) into a ferromagnetic metal (Permalloy, Py). Non-equilibrium spins with both static and precessional spin polarizations are dynamically generated by the ferromagnetic resonance of YIG magnetization, and electrically detected by Py as dc and ac spin currents, respectively. The dc spin current is el… ▽ More We report room temperature electrical detection of spin injection from a ferromagnetic insulator (YIG) into a ferromagnetic metal (Permalloy, Py). Non-equilibrium spins with both static and precessional spin polarizations are dynamically generated by the ferromagnetic resonance of YIG magnetization, and electrically detected by Py as dc and ac spin currents, respectively. The dc spin current is electrically detected via the inverse spin Hall effect of Py, while the ac spin current is converted to a dc voltage via the spin rectification effect of Py which is resonantly enhanced by dynamic exchange interaction between the ac spin current and the Py magnetization. Our results reveal a new path for develo** insulator spintronics, which is distinct from the prevalent but controversial approach of using Pt as the spin current detector. △ Less

Submitted 17 October, 2013; originally announced October 2013.

Comments: 5 pages, 4 figures

Journal ref: Physical Review B 89, 180404(R) (2014)

Hop** Transport through Defect-induced Localized States in Molybdenum Disulfide

Authors: Hao Qiu, Tao Xu, Zilu Wang, Wei Ren, Haiyan Nan, Zhenhua Ni, Qian Chen, Shijun Yuan, Feng Miao, Fengqi Song, Gen Long, Yi Shi, Litao Sun, **lan Wang, Xinran Wang

Abstract: Molybdenum disulfide is a novel two-dimensional semiconductor with potential applications in electronic and optoelectronic devices. However, the nature of charge transport in back-gated devices still remains elusive as they show much lower mobility than theoretical calculations and native n-type do**. Here we report transport study in few-layer molybdenum disulfide, together with transmission el… ▽ More Molybdenum disulfide is a novel two-dimensional semiconductor with potential applications in electronic and optoelectronic devices. However, the nature of charge transport in back-gated devices still remains elusive as they show much lower mobility than theoretical calculations and native n-type do**. Here we report transport study in few-layer molybdenum disulfide, together with transmission electron microscopy and density functional theory. We provide direct evidence that sulfur vacancies exist in molybdenum disulfide, introducing localized donor states inside the bandgap. Under low carrier densities, the transport exhibits nearest-neighbor hop** at high temperatures and variable-range hop** at low temperatures, which can be well explained under Mott formalism. We suggest that the low-carrier-density transport is dominated by hop** via these localized gap states. Our study reveals the important role of short-range surface defects in tailoring the properties and device applications of molybdenum disulfide. △ Less

Submitted 14 September, 2013; originally announced September 2013.

Comments: 35 pages, 4 figures. To appear in Nature Communications

Journal ref: Nature Communications 4, 2642 (2013)

Tuning the giant inverse magnetocaloric effect in Mn2-xCrxSb compounds

Authors: L. Caron, X. F. Miao, J. C. P Klaasse, S. Gama, E. Brück

Abstract: Structural, magnetic and magnetocaloric properties of Mn2-xCrxSb compounds have been studied. In these compounds a first order magnetic phase transition from the ferrimagnetic to the antiferromagnetic state occurs with decreasing temperature, giving rise to giant inverse magnetocaloric effects that can be tuned over a wide temperature interval through changes in substitution concentration. Entropy… ▽ More Structural, magnetic and magnetocaloric properties of Mn2-xCrxSb compounds have been studied. In these compounds a first order magnetic phase transition from the ferrimagnetic to the antiferromagnetic state occurs with decreasing temperature, giving rise to giant inverse magnetocaloric effects that can be tuned over a wide temperature interval through changes in substitution concentration. Entropy changes as high as 7.5 J/kgK have been observed, and a composition independent entropy change is obtained for several different concentrations/working temperatures, making these compounds suitable candidates for a composite working material. △ Less

Submitted 11 July, 2013; originally announced July 2013.

Comments: 4 pages, 5 figures

Electronically Guided Self Assembly within Quantum Corrals

Authors: R. X. Cao, B. F. Miao, Z. F. Zhong, L. Sun, B. You, W. Zhang, D. Wu, An Hu, S. D. Bader, H. F. Ding

Abstract: A grand challenge of nanoscience is to master the control of structure and properties in order to go beyond present day functionality. The creation of nanostructures via atom manipulation by means of a scanning probe represents one of the great achievements of the nano era. Here we build on this achievement to self-assemble nanostructures within quantum corrals. The structuring is guided by the qu… ▽ More A grand challenge of nanoscience is to master the control of structure and properties in order to go beyond present day functionality. The creation of nanostructures via atom manipulation by means of a scanning probe represents one of the great achievements of the nano era. Here we build on this achievement to self-assemble nanostructures within quantum corrals. The structuring is guided by the quantum confinement of the electronic density of a silver metallic substrate within the corrals. We experimentally demonstrate different self-organized Gd atomic structures confined within 30-nm circular and triangular Fe quantum corrals. This approach enables the creation of model systems to explore and understand new nanomaterials and device prototypes. △ Less

Submitted 6 September, 2012; originally announced September 2012.

Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene

Authors: Wei Han, W. H. Wang, K. Pi, K. M. McCreary, W. Bao, Yan Li, F. Miao, C. N. Lau, R. K. Kawakami

Abstract: Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic/nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate… ▽ More Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic/nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the non-local MR reveal an electron-hole asymmetry in which the non-local MR is roughly independent of bias for electrons, but varies significantly with bias for holes. △ Less

Submitted 5 March, 2009; originally announced March 2009.

Comments: To appear in PRL

Journal ref: Phys. Rev. Lett. 102, 137205 (2009)