Observation of non-trivial topological electronic structure of orthorhombic SnSe
Authors:
H. J. Zheng,
W. J. Shi,
C. W. Wang,
Y. Y. Lv,
W. Xia,
B. H. Li,
F. Wu,
S. M. He,
K. Huang,
S. T. Cui,
C. Chen,
H. F. Yang,
A. J. Liang,
M. X. Wang,
Z. Sun,
S. H. Yao,
Y. B. Chen,
Y. F. Guo,
Q. X. Mi,
L. X. Yang,
M. S. Bahramy,
Z. K. Liu,
Y. L. Chen
Abstract:
Topological electronic structures are key to the topological classification of quantum materials and play an important role in their physical properties and applications. Recently, SnSe has attracted great research interests due to its superior thermoelectric performance. However, it's topological nature has long been ignored. In this work, by combining synchrotron-based angle-resolved photoemissi…
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Topological electronic structures are key to the topological classification of quantum materials and play an important role in their physical properties and applications. Recently, SnSe has attracted great research interests due to its superior thermoelectric performance. However, it's topological nature has long been ignored. In this work, by combining synchrotron-based angle-resolved photoemission spectroscopy and ab-initio calculations, we systematically investigated the topological electronic structure of orthorhombic SnSe. By identifying the continuous gap in the valence bands due to the band inversion and the topological surface states on its (001) surface, we establish SnSe as a strong topological insulator. Furthermore, we studied the evolution of the topological electronic structure and propose the topological phase diagram in SnSe1-xTex. Our work reveals the topological non-trivial nature of SnSe and provides new understandings of its intriguing transport properties.
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Submitted 14 April, 2022;
originally announced April 2022.
Photoemission Study of the Electronic Structure of Valence Band Convergent SnSe
Authors:
C. W. Wang,
Y. Y. Y. Xia,
Z. Tian,
J. Jiang,
B. H. Li,
S. T. Cui,
H. F. Yang,
A. J. Liang,
X. Y. Zhan,
G. H. Hong,
S. Liu,
C. Chen,
M. X. Wang,
L. X. Yang,
Z. Liu,
Q. X. Mi,
G. Li,
J. M. Xue,
Z. K. Liu,
Y. L. Chen
Abstract:
IV-VI semiconductor SnSe has been known as the material with record high thermoelectric performance.The multiple close-to-degenerate valence bands in the electronic band structure has been one of the key factors contributing to the high power factor and thus figure of merit in the SnSe single crystal. To date, there have been primarily theoretical calculations of this particular electronic band st…
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IV-VI semiconductor SnSe has been known as the material with record high thermoelectric performance.The multiple close-to-degenerate valence bands in the electronic band structure has been one of the key factors contributing to the high power factor and thus figure of merit in the SnSe single crystal. To date, there have been primarily theoretical calculations of this particular electronic band structure. In this paper, however, using angle-resolved photoemission spectroscopy, we perform a systematic investigation of the electronic structure of SnSe. We directly observe three predicted hole bands with small energy differences between their band tops and relatively small in-plane effective masses, in good agreement with the ab initio calculations and critical for the enhancement of the Seebeck coefficient while kee** high electrical conductivity. Our results reveal the complete band structure of SnSe and help to provide a deeper understanding of the electronic origin of the excellent thermoelectric performances in SnSe.
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Submitted 12 April, 2018;
originally announced April 2018.
