Showing 1–50 of 161 results for author: Meyer, J

Solving the Synthetic Riddle of Colloidal 2D PbTe Nanoplatelets with Tunable Near-Infrared Emission

Authors: Leon Biesterfeld, Mattis T. Vochezer, Marco Kögel, Ivan A. Zaluzhnyy, Marina Rosebrock, Lars F. Klepzig, Wolfgang Leis, Michael Seitz, Jannik C. Meyer, Jannika Lauth

Abstract: Near-infrared emitting colloidal two-dimensional (2D) PbX (X=S, Se) nanoplatelets have emerged as interesting materials with strong size quantisation in the thickness dimension. They act as model systems for efficient charge carrier multiplication and hold potential as intriguing candidates for finer-based photonic quantum applications. However, synthetic access to the third family member, 2D PbTe… ▽ More Near-infrared emitting colloidal two-dimensional (2D) PbX (X=S, Se) nanoplatelets have emerged as interesting materials with strong size quantisation in the thickness dimension. They act as model systems for efficient charge carrier multiplication and hold potential as intriguing candidates for finer-based photonic quantum applications. However, synthetic access to the third family member, 2D PbTe, remains elusive due to a challenging precursor chemistry. Here, we report a direct synthesis for 2D PbTe nanoplatelets (NPLs) with unable photoluminescence (PL, 910-1460 nm (1.36-0.85 eV), PLQY 1-15 %), based on aminophosphine precursor chemistry. Ex-situ transamination of tris(dimethylamino)phosphine telluride with octylamine is confirmed by 31P NMR and yields a reactive tellurium precursor for the formation of 2D PbTe NPLs at temperatures as low as 0 °C. The PL position of the PbTe NPLs is unable by controlling the Pb:Te ration in the reaction. GIWAXS confirms the 2D geometry of the NPLs and the formation of superlattices. The importance of a post-synthetic passivation of the PbTe NPLs by PbI2 to ensure colloidal stability of the otherwise oxygen sensitive samples is supported by X-ray photoelectron spectroscopy. Our results expand and complete the row of lead chalcogenide-based 2D NPLs, opening up new ways for further pushing the optical properties of 2D NPLs into the infrared and toward technologically relevant wavelengths. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Are large language models superhuman chemists?

Authors: Adrian Mirza, Nawaf Alampara, Sreekanth Kunchapu, Benedict Emoekabu, Aswanth Krishnan, Mara Wilhelmi, Macjonathan Okereke, Juliane Eberhardt, Amir Mohammad Elahi, Maximilian Greiner, Caroline T. Holick, Tanya Gupta, Mehrdad Asgari, Christina Glaubitz, Lea C. Klepsch, Yannik Köster, Jakob Meyer, Santiago Miret, Tim Hoffmann, Fabian Alexander Kreth, Michael Ringleb, Nicole Roesner, Ulrich S. Schubert, Leanne M. Stafast, Dinga Wonanke , et al. (3 additional authors not shown)

Abstract: Large language models (LLMs) have gained widespread interest due to their ability to process human language and perform tasks on which they have not been explicitly trained. This is relevant for the chemical sciences, which face the problem of small and diverse datasets that are frequently in the form of text. LLMs have shown promise in addressing these issues and are increasingly being harnessed… ▽ More Large language models (LLMs) have gained widespread interest due to their ability to process human language and perform tasks on which they have not been explicitly trained. This is relevant for the chemical sciences, which face the problem of small and diverse datasets that are frequently in the form of text. LLMs have shown promise in addressing these issues and are increasingly being harnessed to predict chemical properties, optimize reactions, and even design and conduct experiments autonomously. However, we still have only a very limited systematic understanding of the chemical reasoning capabilities of LLMs, which would be required to improve models and mitigate potential harms. Here, we introduce "ChemBench," an automated framework designed to rigorously evaluate the chemical knowledge and reasoning abilities of state-of-the-art LLMs against the expertise of human chemists. We curated more than 7,000 question-answer pairs for a wide array of subfields of the chemical sciences, evaluated leading open and closed-source LLMs, and found that the best models outperformed the best human chemists in our study on average. The models, however, struggle with some chemical reasoning tasks that are easy for human experts and provide overconfident, misleading predictions, such as about chemicals' safety profiles. These findings underscore the dual reality that, although LLMs demonstrate remarkable proficiency in chemical tasks, further research is critical to enhancing their safety and utility in chemical sciences. Our findings also indicate a need for adaptations to chemistry curricula and highlight the importance of continuing to develop evaluation frameworks to improve safe and useful LLMs. △ Less

Submitted 1 April, 2024; originally announced April 2024.

Josephson diode effect in a ballistic single-channel nanowire

Authors: Julia S. Meyer, Manuel Houzet

Abstract: When time-reversal and inversion symmetry are broken, superconducting circuits may exhibit a so-called diode effect, where the critical currents for opposite directions of the current flow differ. In recent years, this effect has been observed in a multitude of systems and the different physical ingredients that may yield such an effect are well understood. On a microscopic level, the interplay be… ▽ More When time-reversal and inversion symmetry are broken, superconducting circuits may exhibit a so-called diode effect, where the critical currents for opposite directions of the current flow differ. In recent years, this effect has been observed in a multitude of systems and the different physical ingredients that may yield such an effect are well understood. On a microscopic level, the interplay between spin-orbit coupling and a Zeeman field may give rise to a diode effect in a single Josephson junction. However, so far there is no analytical description of the effect within a simple model. Here we study a single channel nanowire with Rashba spin-orbit coupling and subject to a Zeeman field. We show that the different Fermi velocities and spin projections of the two pseudo-spin bands lead to a diode effect. Simple analytical expressions for the efficiency can be obtained in limiting cases. △ Less

Submitted 1 April, 2024; originally announced April 2024.

Comments: 5 pages, 2 figures

Theory of quasiparticle-induced errors in driven-dissipative Schrödinger cat qubits

Authors: Kirill Dubovitskii, Denis M. Basko, Julia S. Meyer, Manuel Houzet

Abstract: Understanding the mechanisms of qubit decoherence is a crucial prerequisite for improving the qubit performance. In this work we discuss the effects of residual Bogolyubov quasiparticles in Schrödinger cat qubits, either of the dissipative or Kerr type. The major difference from previous studies of quasiparticles in superconducting qubits is that the Schrödinger cat qubits are operated under non-e… ▽ More Understanding the mechanisms of qubit decoherence is a crucial prerequisite for improving the qubit performance. In this work we discuss the effects of residual Bogolyubov quasiparticles in Schrödinger cat qubits, either of the dissipative or Kerr type. The major difference from previous studies of quasiparticles in superconducting qubits is that the Schrödinger cat qubits are operated under non-equilibrium conditions. Indeed, an external microwave drive is needed to stabilize "cat states", which are superpositions of coherent degenerate eigenstates of an effective stationary Lindbladian in the rotating frame. We present a microscopic derivation of the master equation for cat qubits and express the effect of the quasiparticles as dissipators acting on the density matrix of the cat qubit. This enables us to determine the conditions under which the quasiparticles give a substantial contribution to the qubit errors. △ Less

Submitted 22 March, 2024; originally announced March 2024.

Deterministic and stochastic aspects of current-induced magnetization reversal in perpendicular nanomagnets

Authors: Giacomo Sala, Jan Meyer, Anne Flechsig, Laura Gabriel, Pietro Gambardella

Abstract: We study the incubation and transition times that characterize the magnetization switching induced by spin-orbit torques in nanomagnets with perpendicular anisotropy. We present a phenomenological model to interpret the dependence of the incubation time on the amplitude of the voltage pulse and assisting magnetic field and estimate the volume of the seed domain that triggers the switching. Our mea… ▽ More We study the incubation and transition times that characterize the magnetization switching induced by spin-orbit torques in nanomagnets with perpendicular anisotropy. We present a phenomenological model to interpret the dependence of the incubation time on the amplitude of the voltage pulse and assisting magnetic field and estimate the volume of the seed domain that triggers the switching. Our measurements evidence a correlation between the incubation and transition times that is mediated by the temperature variation during the electric pulse. In addition, we discuss the stochastic distributions of the two times in terms of the energy barriers opposing the nucleation and expansion of the seed domain. We propose two models based on the log-normal and gamma functions to account for the different origin of the variability of the incubation and transition times, which are associated with a single nucleation barrier and multiple pinning sites, respectively. △ Less

Submitted 11 January, 2024; originally announced January 2024.

Journal ref: Physical Review B 107, 214447 (2023)

Opportunities for the direct manipulation of a phase-driven Andreev spin qubit

Authors: Yoan Fauvel, Julia S. Meyer, Manuel Houzet

Abstract: In a Josephson junction, the transfer of Cooper pairs from one superconductor to the other one can be associated with the formation of Andreev bound states. In a Josephson junction made with a semiconducting nanowire, the spin degeneracy of these Andreev states can be broken thanks to the presence of spin-orbit coupling and a finite phase difference between the two superconducting electrodes. The… ▽ More In a Josephson junction, the transfer of Cooper pairs from one superconductor to the other one can be associated with the formation of Andreev bound states. In a Josephson junction made with a semiconducting nanowire, the spin degeneracy of these Andreev states can be broken thanks to the presence of spin-orbit coupling and a finite phase difference between the two superconducting electrodes. The lifting of the spin degeneracy opened the way to the realization of Andreev spin qubits that do not require the application of a large magnetic field. So far the operation of these qubits relied on a Raman process involving two microwave tones and a third Andreev state [M. Hays et al., Science 373, 430 (2021)]. Still, time-reversal preserving impurities in the nanowire allow for spin-flip scattering processes. Here, using the formalism of scattering matrices, we show that these processes generically couple Andreev states with opposite spins. In particular, the non-vanishing current matrix element between them allows for the direct manipulation of phase-driven Andreev spin qubits, thereby circumventing the use of the above-mentioned Raman process. △ Less

Submitted 22 May, 2024; v1 submitted 22 December, 2023; originally announced December 2023.

Comments: 17 pages, 11 figures

Journal ref: Phys. Rev. B 109, 184515 (2024)

Josephson quantum mechanics at odd parity

Authors: Manuel Houzet, Julia S. Meyer, Yuli V. Nazarov

Abstract: A Josephson junction may be in a stable odd parity state when a single quasiparticle is trapped in an Andreev bound state. Embedding such junction in an electromagnetic environment gives rise to a special quantum mechanics of superconducting phase that we investigate theoretically. Our analysis covers several representative cases, from the lifting of the supercurrent quench due to quasiparticle po… ▽ More A Josephson junction may be in a stable odd parity state when a single quasiparticle is trapped in an Andreev bound state. Embedding such junction in an electromagnetic environment gives rise to a special quantum mechanics of superconducting phase that we investigate theoretically. Our analysis covers several representative cases, from the lifting of the supercurrent quench due to quasiparticle poisoning for a low ohmic impedance of the environment, to a Schmid transition in a current-biased junction that for odd parity occurs at four times bigger critical impedance. For intermediate impedances, the supercurrent in the odd state is higher than in the even one. △ Less

Submitted 6 September, 2023; originally announced September 2023.

Comments: 5+14 pages, 4+6 figures

Spectral properties of disordered Ising superconductors with singlet and triplet pairing in in-plane magnetic fields

Authors: Stefan Ilic, Julia S. Meyer, Manuel Houzet

Abstract: We study the spectral properties of disordered superconductors with Ising spin-orbit coupling (ISOC) subjected to in-plane magnetic fields. In addition to the conventional singlet pairing, we also consider the recently proposed equal-spin triplet pairing, which couples to the singlet at finite in-plane magnetic fields. While both singlet and triplet order parameters are immune to intravalley scatt… ▽ More We study the spectral properties of disordered superconductors with Ising spin-orbit coupling (ISOC) subjected to in-plane magnetic fields. In addition to the conventional singlet pairing, we also consider the recently proposed equal-spin triplet pairing, which couples to the singlet at finite in-plane magnetic fields. While both singlet and triplet order parameters are immune to intravalley scattering, they are significantly affected by intervalley scattering. In the realistic regime of strong ISOC, we find that the properties of the superconductor are well described by a simple formula reminiscent of the well-known Abrikosov-Gor'kov theory, but with a modified self-consistency condition. Our results enable straightforward self-consistent calculation of singlet and triplet order parameters and the density of states of disordered Ising superconductors, which can be particularly useful for interpreting recent tunneling spectroscopy experiments in these systems. We also investigate the high-energy features in the density of states, the so-called mirage gaps, and discuss how they are modified by triplet pairing. △ Less

Submitted 4 August, 2023; originally announced August 2023.

Comments: 9 pages, 5 figures

Spin susceptibility of nonunitary spin-triplet superconductors

Authors: Thomas Bernat, Julia S. Meyer, Manuel Houzet

Abstract: The spin susceptibility is an important probe to characterize the symmetry of the order parameter in unconventional superconductors. Among them, nonunitary triplet superconductors have attracted a lot of attention recently in the context of the search for topological superconductivity. Here, we derive a general formula for the spin susceptibility of nonunitary triplet superconductors within a sing… ▽ More The spin susceptibility is an important probe to characterize the symmetry of the order parameter in unconventional superconductors. Among them, nonunitary triplet superconductors have attracted a lot of attention recently in the context of the search for topological superconductivity. Here, we derive a general formula for the spin susceptibility of nonunitary triplet superconductors within a single-band model of non-magnetic, centrosymmetric materials with strong spin-orbit coupling. We use it to critically assess experimental claims of nonunitary triplet superconductivity in some materials. △ Less

Submitted 21 December, 2022; originally announced December 2022.

Comments: 6 pages, 2 figures, 1 table

Evidence of $φ$0-Josephson junction from skewed diffraction patterns in Sn-InSb nanowires

Authors: B. Zhang, Z. Li, V. Aguilar, P. Zhang, M. Pendharkar, C. Dempsey, J. S. Lee, S. D. Harrington, S. Tan, J. S. Meyer, M. Houzet, C. J. Palmstrom, S. M. Frolov

Abstract: We study Josephson junctions based on InSb nanowires with Sn shells. We observe skewed critical current diffraction patterns: the maxima in forward and reverse current bias are at different magnetic flux, with a displacement of 20-40 mT. The skew is greatest when the external field is nearly perpendicular to the nanowire, in the substrate plane. This orientation suggests that spin-orbit interactio… ▽ More We study Josephson junctions based on InSb nanowires with Sn shells. We observe skewed critical current diffraction patterns: the maxima in forward and reverse current bias are at different magnetic flux, with a displacement of 20-40 mT. The skew is greatest when the external field is nearly perpendicular to the nanowire, in the substrate plane. This orientation suggests that spin-orbit interaction plays a role. We develop a phenomenological model and perform tight-binding calculations, both methods reproducing the essential features of the experiment. The effect modeled is the $φ$0-Josephson junction with higher-order Josephson harmonics. The system is of interest for Majorana studies: the effects are either precursor to or concomitant with topological superconductivity. Current-phase relations that lack inversion symmetry can also be used to design quantum circuits with engineered nonlinearity. △ Less

Submitted 6 June, 2024; v1 submitted 30 November, 2022; originally announced December 2022.

Geometrical effects on the downstream conductance in quantum-Hall--superconductor hybrid systems

Authors: Anthony David, Julia S. Meyer, Manuel Houzet

Abstract: We consider a quantum Hall (QH) region in contact with a superconductor (SC), i.e., a QH-SC junction. Due to successive Andreev reflections, the QH-SC interface hosts hybridized electron and hole edge states called chiral Andreev edge states (CAES). We theoretically study the transport properties of these CAES by using a microscopic, tight-binding model. We find that the transport properties stron… ▽ More We consider a quantum Hall (QH) region in contact with a superconductor (SC), i.e., a QH-SC junction. Due to successive Andreev reflections, the QH-SC interface hosts hybridized electron and hole edge states called chiral Andreev edge states (CAES). We theoretically study the transport properties of these CAES by using a microscopic, tight-binding model. We find that the transport properties strongly depend on the contact geometry and the value of the filling factor. We notice that it is necessary to add local barriers at the corners of the junction in order to reproduce such properties, when using effective one-dimensional models. △ Less

Submitted 22 March, 2023; v1 submitted 30 October, 2022; originally announced October 2022.

Comments: 9 pages, 14 figures, published version

Journal ref: Phys. Rev. B 107, 125416 (2023)

Weyl singularities in polaritonic multi-terminal Josephson junctions

Authors: Ismaël Septembre, Julia S. Meyer, Dmitry D. Solnyshkov, Guillaume Malpuech

Abstract: We study theoretically analog multi-terminal Josephson junctions formed by gapped superfluids created upon resonant pum** of cavity exciton-polaritons. We study the $p$-like bands of a 5-terminal junction in the 4D parameter space created by the superfluid phases acting as quasi-momenta. We find 4/6 Weyl points in 3D subspaces with preserved/broken time-reversal symmetry. We link the real space… ▽ More We study theoretically analog multi-terminal Josephson junctions formed by gapped superfluids created upon resonant pum** of cavity exciton-polaritons. We study the $p$-like bands of a 5-terminal junction in the 4D parameter space created by the superfluid phases acting as quasi-momenta. We find 4/6 Weyl points in 3D subspaces with preserved/broken time-reversal symmetry. We link the real space topology (vortices) to the parameter space one (Weyl points). We derive an effective Hamiltonian encoding the creation, motion, and annihilation of Weyl nodes in 4D. Our work paves the way to the study of exotic topological phases in a platform allowing direct measurement of eigenstates and band topology. △ Less

Submitted 20 October, 2022; originally announced October 2022.

Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates

Authors: Brian B. Haidet, Jarod Meyer, Pooja Reddy, Eamonn T. Hughes, Kunal Mukherjee

Abstract: PbSe and related IV-VI rocksalt-structure semiconductors have important electronic properties that may be controlled by epitaxial strain and interfaces, thus harnessed in an emerging class of IV-VI/III-V heterostructures. The synthesis of such heterostructures and understanding mechanisms for strain-relief is central to achieving this goal. We show that a range of interfacial defects mediate latti… ▽ More PbSe and related IV-VI rocksalt-structure semiconductors have important electronic properties that may be controlled by epitaxial strain and interfaces, thus harnessed in an emerging class of IV-VI/III-V heterostructures. The synthesis of such heterostructures and understanding mechanisms for strain-relief is central to achieving this goal. We show that a range of interfacial defects mediate lattice mismatch in (001)-oriented epitaxial thin films of PbSe with III-V templates of GaAs, InAs, and GaSb. While the primary slip system {100}<110> for dislocation glide in PbSe is well-studied for its facile glide properties, it is inactive in (001)-oriented films used in our work. Yet, we obtain nearly relaxed PbSe films in the three heteroepitaxial systems studied with interfaces ranging from incoherent without localized misfit dislocations on 8.3% mismatched GaAs, a mixture of semi-coherent and incoherent patches on 1.5% mismatched InAs, to nearly coherent on 0.8% mismatched GaSb. The semi-coherent portions of the interfaces to InAs form by 60° misfit dislocations gliding on higher order {111}<110> slip systems. On the more closely lattice-matched GaSb, arrays of 90° (edge) misfit dislocations form via a climb process. The diversity of strain-relaxation mechanisms accessible to PbSe makes it a rich system for heteroepitaxial integration with III-V substrates. △ Less

Submitted 11 October, 2022; originally announced October 2022.

Comments: 13 pages, 8 figures

Anomalous Josephson effect in planar noncentrosymmetric superconducting devices

Authors: Jaglul Hasan, Konstantin N. Nesterov, Songci Li, Manuel Houzet, Julia S. Meyer, Alex Levchenko

Abstract: In two-dimensional electron systems with broken inversion and time-reversal symmetries, a Josephson junction reveals an anomalous response: the supercurrent is nonzero even at zero phase difference between two superconductors. We consider details of this peculiar phenomenon in the planar double-barrier configurations of hybrid circuits, where the noncentrosymmetric normal region is described in te… ▽ More In two-dimensional electron systems with broken inversion and time-reversal symmetries, a Josephson junction reveals an anomalous response: the supercurrent is nonzero even at zero phase difference between two superconductors. We consider details of this peculiar phenomenon in the planar double-barrier configurations of hybrid circuits, where the noncentrosymmetric normal region is described in terms of the paradigmatic Rashba model of spin-orbit coupling. We analyze this anomalous Josephson effect by means of both the Ginzburg-Landau formalism and the microscopic Green's functions approach in the clean limit. The magnitude of the critical current is calculated for an arbitrary in-plane magnetic field orientation, and anomalous phase shifts in the Josephson current-phase relation are determined in terms of the parameters of the model in several limiting cases. △ Less

Submitted 19 November, 2022; v1 submitted 3 October, 2022; originally announced October 2022.

Comments: Spin-Coherent Phenomena in Semiconductors: Physical Review B special issue in honor of E. I. Rashba [10 pages, 5 figures]

Journal ref: Phys. Rev. B 106, 214518 (2022)

Measurements and Numerical Calculations of Thermal Conductivity to Evaluate the Quality of β-Gallium Oxide Thin Films Grown on Sapphire and Silicon Carbide by Molecular Beam Epitaxy

Authors: Diego Vaca, Matthew Barry, Luke Yates, Neeraj Nepal, D. Scott Katzer, Brian P. Downey, Virginia Wheeler, Luke Nyakiti, David J. Meyer, Samuel Graham, Satish Kumar

Abstract: We report a method to obtain insights into lower thermal conductivity of β-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates. We compare experimental values against the numerical predictions to decipher the effect of boundary scattering and defects in thin-films. We used time domain thermoreflectance (TDTR) to perform the experiments, density function… ▽ More We report a method to obtain insights into lower thermal conductivity of β-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates. We compare experimental values against the numerical predictions to decipher the effect of boundary scattering and defects in thin-films. We used time domain thermoreflectance (TDTR) to perform the experiments, density functional theory and the Boltzmann transport equation for thermal conductivity calculations, and the diffuse mismatch model for TBC predictions. The experimental thermal conductivities were approximately 3 times smaller than those calculated for perfect Ga2O3 crystals of similar size. When considering the presence of grain boundaries, gallium and oxygen vacancies, and stacking faults in the calculations, the crystals that present around 1% of gallium vacancies and a density of stacking faults of 106 faults/cm were the ones whose thermal conductivities were closer to the experimental results. Our analysis suggests the level of different types of defects present in the Ga2O3 crystal that could be used to improve the quality of MBE-grown samples by reducing these defects and thereby produce materials with higher thermal conductivities. △ Less

Submitted 4 May, 2022; originally announced May 2022.

Comments: 11 pages. Includes supplementary Information. The following article has been submitted to Applied Physics Letters. After it is published, it will be found at https://publishing.aip.org/resources/librarians/products/journals/

Nuclear-induced dephasing and signatures of hyperfine effects in isotopically purified $^{13}$C graphene

Authors: Vincent Strenzke, Jana M. Meyer, Isabell Grandt-Ionita, Marta Prada, Hyun-Seok Kim, Martin Heilmann, Joao Marcelo J. Lopes, Lars Tiemann, Robert H. Blick

Abstract: The hyperfine interaction between the spins of electrons and nuclei is both a blessing and a curse. It can provide a wealth of information when used as an experimental probing technique but it can also be destructive when it acts as a dephasive perturbation on the electronic system. In this work, we fabricated large scale single and multilayer isotopically-purified $^{13}$C graphene Hall bars to s… ▽ More The hyperfine interaction between the spins of electrons and nuclei is both a blessing and a curse. It can provide a wealth of information when used as an experimental probing technique but it can also be destructive when it acts as a dephasive perturbation on the electronic system. In this work, we fabricated large scale single and multilayer isotopically-purified $^{13}$C graphene Hall bars to search for interaction effects between the nuclear magnetic moments and the electronic system. We find signatures of nuclei with a spin in the analysis of the weak localization phenomenon that shows a significant dichotomy in the scattering times of monolayer $^{12}$C and $^{13}$C graphene close the Dirac point. Microwave-induced electron spin flips were exploited to transfer momentum to the nuclei and build-up a nuclear field. The presence of a very weak nuclear field is encoded in a modulation of the electron Zeeman energy which shifts the energy for resonant absorption and reduces the $g$-factor. △ Less

Submitted 11 February, 2022; originally announced February 2022.

Comments: 5 figures, 21 pages

Josephson effect in superconductor-normal dot-superconductor junctions driven out of equilibrium by quasiparticle injection

Authors: Sarath Sankar, Julia S. Meyer, Manuel Houzet

Abstract: We study theoretically the large variations of the supercurrent through a normal dot that are induced by a small quasiparticle injection current from normal leads connected to the dot. We find that the supercurrent decomposes into a subgap contribution, which depends on the voltages applied to the normal leads, as well as a contribution with opposite sign from energies outside the gap, which is in… ▽ More We study theoretically the large variations of the supercurrent through a normal dot that are induced by a small quasiparticle injection current from normal leads connected to the dot. We find that the supercurrent decomposes into a subgap contribution, which depends on the voltages applied to the normal leads, as well as a contribution with opposite sign from energies outside the gap, which is insensitive to the voltages. As the voltages gradually suppress the subgap contribution, a critical voltage exists above which the contribution from energies outside the gap dominates, leading to a sign reversal of the current-phase relation, namely a transition to a so-called $π$-junction behavior. We determine the critical voltage and analyze the robustness of the effect with respect to temperature and inelastic relaxation in the dot. △ Less

Submitted 12 January, 2022; originally announced January 2022.

Comments: 15 pages, 14 figures

Journal ref: Phys. Rev. B 105, 134515 (2022)

Aligned Stacking of Nanopatterned 2D materials -- Towards 3D printing at atomic resolution

Authors: Jonas Haas, Finn Ulrich, Christoph Hofer, Xiao Wang, Kai Braun, Jannik C. Meyer

Abstract: Two-dimensional materials can be combined by placing individual layers on top of each other, so that they are bound only by their van der Waals interaction. The sequence of layers can be chosen arbitrarily, enabling an essentially atomic-level control of the material and thereby a wide choice of properties along one dimension. However, simultaneous control over the structure in the in-plane direct… ▽ More Two-dimensional materials can be combined by placing individual layers on top of each other, so that they are bound only by their van der Waals interaction. The sequence of layers can be chosen arbitrarily, enabling an essentially atomic-level control of the material and thereby a wide choice of properties along one dimension. However, simultaneous control over the structure in the in-plane directions is so far still rather limited. Here, we combine spatially controlled modifications of 2D materials, using focused electron irradiation or electron beam induced etching, with the layer-by-layer assembly of van der Waals heterostructures. A novel assembly process makes it possible to structure each layer with an arbitrary pattern prior to the assembly into the heterostructure. Moreover, it enables a stacking of the layers with accurate lateral alignment, with an accuracy of currently 10nm, under observation in an electron microscope. Together, this enables the fabrication of almost arbitrary 3D structures with highest spatial resolution. △ Less

Submitted 18 October, 2021; v1 submitted 15 October, 2021; originally announced October 2021.

Comments: The supplementary video is part of the source folder

Journal ref: ACS Nano 2022, 16, 2, 1836-1846

Towards Exotic Layered Materials: 2D Cuprous Iodide

Authors: Kimmo Mustonen, Christoph Hofer, Peter Kotrusz, Alexander Markevich, Martin Hulman, Clemens Mangler, Toma Susi, Timothy J. Pennycook, Karol Hricovini, Christine M. Richter, Jannik C. Meyer, Jani Kotakoski, Viera Skakalova

Abstract: Heterostructures composed of two-dimensional (2D) materials are already opening many new possibilities in such fields of technology as electronics and magnonics, but far more could be achieved if the number and diversity of 2D materials is increased. So far, only a few dozen 2D crystals have been extracted from materials that exhibit a layered phase in ambient conditions, omitting entirely the lar… ▽ More Heterostructures composed of two-dimensional (2D) materials are already opening many new possibilities in such fields of technology as electronics and magnonics, but far more could be achieved if the number and diversity of 2D materials is increased. So far, only a few dozen 2D crystals have been extracted from materials that exhibit a layered phase in ambient conditions, omitting entirely the large number of layered materials that may exist in other temperatures and pressures. Here, we demonstrate how these structures can be stabilized in 2D van der Waals stacks under room temperature via growing them directly in graphene encapsulation by using graphene oxide as the template material. Specifically, we produce an ambient stable 2D structure of copper and iodine, a material that normally only occurs in layered form at elevated temperatures between 645 and 675 K. Our results establish a route to the production of more exotic phases of materials that would otherwise be difficult or impossible to stabilize for experiments in ambient. △ Less

Submitted 3 December, 2021; v1 submitted 17 September, 2021; originally announced September 2021.

Comments: 15 pages, 6 figures, separate supplementary material included

Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs

Authors: Jarod Meyer, Aaron J. Muhowski, Leland J. Nordin, Eamonn T. Hughes, Brian B. Haidet, Daniel Wasserman, Kunal Mukherjee

Abstract: We report on photoluminescence in the 3-7 $μ$m mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at temperatures below 400 °C, luminesce brightly at room temperature and have minority carrier lifetimes as long as 172 ns. The relatively long lifetimes in PbSe thin film… ▽ More We report on photoluminescence in the 3-7 $μ$m mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at temperatures below 400 °C, luminesce brightly at room temperature and have minority carrier lifetimes as long as 172 ns. The relatively long lifetimes in PbSe thin films are achievable despite threading dislocation densities exceeding $10^9$ $cm^{-2}$ arising from island growth on the nearly 8% lattice- and crystal-structure-mismatched GaAs substrate. Using quasi-continuous-wave and time-resolved photoluminescence, we show Shockley-Read-Hall recombination is slow in our high dislocation density PbSe films at room temperature, a hallmark of defect tolerance. Power-dependent photoluminescence and high injection excess carrier lifetimes at room temperature suggest that degenerate Auger recombination limits the efficiency of our films, though the Auger recombination rates are significantly lower than equivalent, III-V bulk materials and even a bit slower than expectations for bulk PbSe. Consequently, the combined effects of defect tolerance and low Auger recombination rates yield an estimated peak internal quantum efficiency of roughly 30% at room temperature, unparalleled in the MWIR for a severely lattice-mismatched thin film. We anticipate substantial opportunities for improving performance by optimizing crystal growth as well as understanding Auger processes in thin films. These results highlight the unique opportunity to harness the unusual chemical bonding in PbSe and related IV-VI semiconductors for heterogeneously integrated mid-infrared light sources constrained by tight thermal budgets in new device designs. △ Less

Submitted 28 August, 2021; originally announced August 2021.

Comments: 24 pages, 6 figures

Journal ref: APL Materials 9, 111112 (2021)

Effect of surface temperature on quantum dynamics of H$_2$ on Cu(111) using a chemically accurate potential energy surface

Authors: Joy Dutta, Souvik Mandal, Satrajit Adhikari, Paul Spiering, Jörg Meyer, Mark F. Somers

Abstract: The effect of surface atom vibrations for H$_2$ scattering from a Cu(111) surface at different temperatures is being investigated for hydrogen molecules in their rovibrational ground state ($v$=0, $j$=0). We assume weakly correlated interactions between molecular degrees of freedom and surface modes through a Hartree product type wavefunction. While constructing the six dimensional effective Hamil… ▽ More The effect of surface atom vibrations for H$_2$ scattering from a Cu(111) surface at different temperatures is being investigated for hydrogen molecules in their rovibrational ground state ($v$=0, $j$=0). We assume weakly correlated interactions between molecular degrees of freedom and surface modes through a Hartree product type wavefunction. While constructing the six dimensional effective Hamiltonian, we employ: (a) a chemically accurate potential energy surface according to the Static Corrugation Model [Wijzenbroek and Somers, J. Chem. Phys. 137, 054703 (2012)]; (b) normal mode frequencies and displacement vectors calculated with different surface atom interaction potentials within a cluster approximation; (c) initial state distributions for the vibrational modes according to Bose-Einstein probability factors. We carry out 6D quantum dynamics with the so-constructed effective Hamiltonian, and analyze sticking and state-to-state scattering probabilities. The surface atom vibrations affect the chemisorption dynamics. The results show physically meaningful trends both for reaction as well as scattering probabilities compared to experimental and other theoretical results. △ Less

Submitted 29 April, 2021; originally announced May 2021.

Comments: 38 pages, 10 figures

Journal ref: J. Chem. Phys. 154, 104103 (2021)

Tunneling spectroscopy of few-monolayer NbSe$_2$ in high magnetic field: Ising protection and triplet superconductivity

Authors: M. Kuzmanović, T. Dvir, D. LeBoeuf, S. Ilić, M. Haim, D. Möckli, S. Kraemer, M. Khodas, M. Houzet, J. S. Meyer, M. Aprili, H. Steinberg, C. H. L. Quay

Abstract: In conventional Bardeen-Cooper-Scrieffer (BCS) superconductors, Cooper pairs of electrons of opposite spin (i.e. singlet structure) form the ground state. Equal spin triplet pairs (ESTPs), as in superfluid $^3$He, are of great interest for superconducting spintronics and topological superconductivity, yet remain elusive. Recently, odd-parity ESTPs were predicted to arise in (few-)monolayer superco… ▽ More In conventional Bardeen-Cooper-Scrieffer (BCS) superconductors, Cooper pairs of electrons of opposite spin (i.e. singlet structure) form the ground state. Equal spin triplet pairs (ESTPs), as in superfluid $^3$He, are of great interest for superconducting spintronics and topological superconductivity, yet remain elusive. Recently, odd-parity ESTPs were predicted to arise in (few-)monolayer superconducting NbSe$_2$, from the non-colinearity between the out-of-plane Ising spin-orbit field (due to the lack of inversion symmetry in monolayer NbSe$_2$) and an applied in-plane magnetic field. These ESTPs couple to the singlet order parameter at finite field. Using van der Waals tunnel junctions, we perform spectroscopy of superconducting NbSe$_2$ flakes, of 2--25 monolayer thickness, measuring the quasiparticle density of states (DOS) as a function of applied in-plane magnetic field up to 33T. In flakes $\lesssim$ 15 monolayers thick the DOS has a single superconducting gap. In these thin samples, the magnetic field acts primarily on the spin (vs orbital) degree of freedom of the electrons, and superconductivity is further protected by the Ising field. The superconducting energy gap, extracted from our tunnelling spectra, decreases as a function of the applied magnetic field. However, in bilayer NbSe$_2$, close to the critical field (up to 30T, much larger than the Pauli limit), superconductivity appears to be more robust than expected from Ising protection alone. Our data can be explained by the above-mentioned ESTPs. △ Less

Submitted 2 August, 2022; v1 submitted 1 April, 2021; originally announced April 2021.

Direct observation of layer-stacking and oriented wrinkles in multilayer hexagonal boron nitride

Authors: Lingxiu Chen, Kenan Elibol, Haifang Cai, Chengxin Jiang, Wenhao Shi, Chen Chen, Hui Shan Wang, Xiujun Wang, Xiao**g Mu, Chen Li, Kenji Watanabe, Takashi Taniguchi, Yufeng Guo, Jannik C. Meyer, Haomin Wang

Abstract: Hexagonal boron nitride (h-BN) has long been recognized as an ideal substrate for electronic devices due to its dangling-bond-free surface, insulating nature and thermal/chemical stability. Therefore, to analyse the lattice structure and orientation of h-BN crystals becomes important. Here, the stacking order and wrinkles of h-BN are investigated by transmission electron microscopy (TEM). It is ex… ▽ More Hexagonal boron nitride (h-BN) has long been recognized as an ideal substrate for electronic devices due to its dangling-bond-free surface, insulating nature and thermal/chemical stability. Therefore, to analyse the lattice structure and orientation of h-BN crystals becomes important. Here, the stacking order and wrinkles of h-BN are investigated by transmission electron microscopy (TEM). It is experimentally confirmed that the layers in the h-BN flakes are arranged in the AA' stacking. The wrinkles in a form of threefold network throughout the h-BN crystal are oriented along the armchair direction, and their formation mechanism was further explored by molecular dynamics simulations. Our findings provide a deep insight about the microstructure of h-BN and shed light on the structural design/electronic modulations of two-dimensional crystals. △ Less

Submitted 20 February, 2021; originally announced February 2021.

Comments: 7 pages, 5 figures

Journal ref: 2D Materials 2021, 8, 024001

Parametric amplification of topological interface states in synthetic Andreev bands

Authors: Ismael Septembre, Sergei Koniakhin, Julia Meyer, Dmitry Solnyshkov, Guillaume Malpuech

Abstract: A driven-dissipative nonlinear photonic system (e.g. exciton-polaritons) can operate in a gapped superfluid regime. We theoretically demonstrate that the reflection of a linear wave on this superfluid is an analogue of the Andreev reflection of an electron on a superconductor. A normal region surrounded by two superfluids is found to host Andreev-like bound states. These bound states form topologi… ▽ More A driven-dissipative nonlinear photonic system (e.g. exciton-polaritons) can operate in a gapped superfluid regime. We theoretically demonstrate that the reflection of a linear wave on this superfluid is an analogue of the Andreev reflection of an electron on a superconductor. A normal region surrounded by two superfluids is found to host Andreev-like bound states. These bound states form topological synthetic bands versus the phase difference between the two superfluids. Changing the width of the normal region allows to invert the band topology and to create "interface" states. Instead of demonstrating a linear crossing, synthetic bands are attracted by the non-linear non-Hermitian coupling of bosonic systems which gives rise to a self-amplified strongly occupied topological state. △ Less

Submitted 10 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. B 103, 214504 (2021)

Chemistry at graphene edges in the electron microscope

Authors: Gregor T. Leuthner, Toma Susi, Clemens Mangler, Jannik C. Meyer, Jani Kotakoski

Abstract: Transmission electron microscopy (TEM) and scanning TEM (STEM) are indispensable tools for materials characterization. However, during a typical (S)TEM experiment, the sample is subject to a number of effects that can change its atomic structure. Of these, perhaps the least discussed are chemical modifications due to the non-ideal vacuum around the sample. With single-layer graphene, we show that… ▽ More Transmission electron microscopy (TEM) and scanning TEM (STEM) are indispensable tools for materials characterization. However, during a typical (S)TEM experiment, the sample is subject to a number of effects that can change its atomic structure. Of these, perhaps the least discussed are chemical modifications due to the non-ideal vacuum around the sample. With single-layer graphene, we show that even at relatively low pressures typical for many instruments, these processes can have a significant impact on the sample structure. For example, pore growth becomes up to two orders of magnitude faster at a pressure of ca. 10^{-6} mbar as compared to ultra-high vacuum (UHV; 10^{-10} mbar). Even more remarkably,the presence of oxygen at the sample also changes the observed atomic structure: When imaged in UHV, nearly 90% of the identifiable graphene edge configurations have the armchair structure, whereas armchair and zigzag structures are nearly equally likely to occur when the oxygen partial pressure in the column is higher. Our results both bring attention to the role of the often neglected vacuum composition of the microscope column, and show that control over it can allow atomic-scale tailoring of the specimen structure. △ Less

Submitted 7 December, 2020; originally announced December 2020.

Comments: 33 pages, including the supplement, 9 figures

Electronic friction coefficients from the atom-in-jellium model for $Z=1-92$

Authors: Nick Gerrits, J. Iñaki Juaristi, Jörg Meyer

Abstract: The break-down of the Born-Oppenheimer approximation is an important topic in chemical dynamics on metal surfaces. In this context, the most frequently used "work-horse" is electronic friction theory, commonly relying on friction coefficients obtained from density functional theory (DFT) calculations from the early 80s based on the atom-in-jellium model. However, results are only available for a l… ▽ More The break-down of the Born-Oppenheimer approximation is an important topic in chemical dynamics on metal surfaces. In this context, the most frequently used "work-horse" is electronic friction theory, commonly relying on friction coefficients obtained from density functional theory (DFT) calculations from the early 80s based on the atom-in-jellium model. However, results are only available for a limited set of jellium densities and elements ($Z=1-18$). In this work, these calculations are revisited by investigating the corresponding friction coefficients for the entire periodic table ($Z=1-92$). Furthermore, friction coefficients obtained by including the electron density gradient on the Generalized Gradient Approximation (GGA) level are presented. Finally, we show that spin polarization and relativistic effects can have sizeable effects on these friction coefficients for some elements. △ Less

Submitted 27 October, 2020; v1 submitted 1 October, 2020; originally announced October 2020.

Comments: 30 pages, 10 figues, accepted at Physical Review B

Journal ref: Phys. Rev. B 102 (15), 155130 (2020)

Towards Chirality Control of Graphene Nanoribbons Embedded in Hexagonal Boron Nitride

Authors: Hui Shan Wang, Lingxiu Chen, Kenan Elibol, Li He, Haomin Wang, Chen Chen, Chengxin Jiang, Chen Li, Tianru Wu, Chun Xiao Cong, Timothy J. Pennycook, Giacomo Argentero, Daoli Zhang, Kenji Watanabe, Takashi Taniguchi, Wenya Wei, Qinghong Yuan, Jannik C. Meyer, Xiaoming Xie

Abstract: The integrated inplane growth of two dimensional materials with similar lattices, but distinct electrical properties, could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge specific GNR in the lattice of hBN still remains an enormous challenge for present approaches. Here we developed a two step growth method and successfully achieved sub… ▽ More The integrated inplane growth of two dimensional materials with similar lattices, but distinct electrical properties, could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge specific GNR in the lattice of hBN still remains an enormous challenge for present approaches. Here we developed a two step growth method and successfully achieved sub 5 nm wide zigzag and armchair GNRs embedded in hBN, respectively. Further transport measurements reveal that the sub 7 nm wide zigzag GNRs exhibit openings of the band gap inversely proportional to their width, while narrow armchair GNRs exhibit some fluctuation in the bandgap width relationship.This integrated lateral growth of edge specific GNRs in hBN brings semiconducting building blocks to atomically thin layer, and will provide a promising route to achieve intricate nanoscale electrical circuits on high quality insulating hBN substrates. △ Less

Submitted 27 September, 2020; originally announced September 2020.

Comments: 84 pages,46 figures

Journal ref: Nature Materials, 2020

Resolving Few-Layer Antimonene/Graphene Heterostructures

Authors: Tushar Gupta, Kenan Elibol, Stefan Hummel, Michael Stöger-Pollach, Clemens Mangler, Gerlinde Habler, Jannik C. Meyer, Dominik Eder, Bernhard C. Bayer

Abstract: Two-dimensional (2D) antimony (Sb, antimonene) recently attracted interest due to its peculiar electronic properties and its suitability as anode material in next generation batteries. Sb however exhibits a large polymorphic/allotropic structural diversity, which is also influenced by the Sb's support. Thus understanding Sb heterostructure formation is key in 2D Sb integration. Particularly 2D Sb/… ▽ More Two-dimensional (2D) antimony (Sb, antimonene) recently attracted interest due to its peculiar electronic properties and its suitability as anode material in next generation batteries. Sb however exhibits a large polymorphic/allotropic structural diversity, which is also influenced by the Sb's support. Thus understanding Sb heterostructure formation is key in 2D Sb integration. Particularly 2D Sb/graphene interfaces are of prime importance as contacts in electronics and electrodes in batteries. We thus study here few-layered 2D Sb/graphene heterostructures by atomic-resolution (scanning) transmission electron microscopy. We find the co-existence of two Sb morphologies: First is a 2D growth morphology of layered beta-Sb with beta-Sb(001)||graphene(001) texture. Second are one-dimensional (1D) Sb nanowires which can be matched to beta-Sb with beta-Sb[2-21] perpendicular to graphene(001) texture and are structurally also closely related to thermodynamically non-preferred cubic Sb(001)||graphene(001). Importantly, both Sb morphologies show rotational van-der-Waals epitaxy with the graphene support. Both Sb morphologies are well resilient against environmental bulk oxidation, although superficial Sb-oxide layer formation merits consideration, including formation of novel epitaxial Sb2O3(111)/beta-Sb(001) heterostructures. Exact Sb growth behavior is sensitive on employed processing and substrate properties including, notably, the nature of the support underneath the direct graphene support. This introduces the substrate underneath a direct 2D support as a key parameter in 2D Sb heterostructure formation. Our work provides insights into the rich phase and epitaxy landscape in 2D Sb and 2D Sb/graphene heterostructures. △ Less

Submitted 7 September, 2020; originally announced September 2020.

Single indium atoms and few-atom indium clusters anchored onto graphene via silicon heteroatoms

Authors: Kenan Elibol, Clemens Mangler, David D. O'Regan, Kimmo Mustonen, Dominik Eder, Jannik C. Meyer, Jani Kotakoski, Richard G. Hobbs, Toma Susi, Bernhard C. Bayer

Abstract: Single atoms and few-atom nanoclusters are of high interest in catalysis and plasmonics, but pathways for their fabrication and stable placement remain scarce. We report here the self-assembly of room-temperature-stable single indium (In) atoms and few-atom In clusters (2-6 atoms) that are anchored to substitutional silicon (Si) impurity atoms in suspended monolayer graphene membranes. Using atomi… ▽ More Single atoms and few-atom nanoclusters are of high interest in catalysis and plasmonics, but pathways for their fabrication and stable placement remain scarce. We report here the self-assembly of room-temperature-stable single indium (In) atoms and few-atom In clusters (2-6 atoms) that are anchored to substitutional silicon (Si) impurity atoms in suspended monolayer graphene membranes. Using atomically resolved scanning transmission electron microscopy (STEM), we find that the exact atomic arrangements of the In atoms depend strongly on the original coordination of the Si anchors in the graphene lattice: Single In atoms and In clusters with 3-fold symmetry readily form on 3-fold coordinated Si atoms, whereas 4-fold symmetric clusters are found attached to 4-fold coordinated Si atoms. All structures are produced by our fabrication route without the requirement for electron-beam induced materials modification. In turn, when activated by electron beam irradiation in the STEM, we observe in situ the formation, restructuring and translation dynamics of the Si-anchored In structures: Hexagon-centered 4-fold symmetric In clusters can (reversibly) transform into In chains or In dimers, whereas C-centered 3-fold symmetric In clusters can move along the zig-zag direction of the graphene lattice due to the migration of Si atoms during electron-beam irradiation, or transform to Si-anchored single In atoms. Our results provide a novel framework for the controlled self-assembly and heteroatomic anchoring of single atoms and few-atom clusters on graphene. △ Less

Submitted 31 August, 2020; originally announced September 2020.

Journal ref: ACS Nano 2021, 15, 9, 14373-14383

Auger Recombination Coefficients in Type-I Mid-Infrared InGaAsSb Quantum Well Lasers

Authors: Timothy D. Eales, Igor P. Marko, Alfred R. Adams, Jerry R. Meyer, Igor Vurgaftman, Stephen J. Sweeney

Abstract: From a systematic study of the threshold current density as a function of temperature and hydrostatic pressure, in conjunction with theoretical analysis of the gain and threshold carrier density, we have determined the wavelength dependence of the Auger recombination coefficients in InGaAsSb/GaSb quantum well lasers emitting in the 1.7-3.2 $μ$m wavelength range. From hydrostatic pressure measureme… ▽ More From a systematic study of the threshold current density as a function of temperature and hydrostatic pressure, in conjunction with theoretical analysis of the gain and threshold carrier density, we have determined the wavelength dependence of the Auger recombination coefficients in InGaAsSb/GaSb quantum well lasers emitting in the 1.7-3.2 $μ$m wavelength range. From hydrostatic pressure measurements, the non-radiative component of threshold currents for individual lasers was determined continuously as a function of wavelength. The results are analysed to determine the Auger coefficients quantitatively. This procedure involves calculating the threshold carrier density based on device properties, optical losses, and estimated Auger contribution to the total threshold current density. We observe a minimum in the Auger rate around 2.1 $μ$m. A strong increase with decreasing mid-infrared wavelength (< 2 $μ$m) indicates the prominent role of inter-valence Auger transitions to the split-off hole band (CHSH process). Above 2 $μ$m, the increase with wavelength is approximately exponential due to CHCC or CHLH Auger recombination, limiting long wavelength operation. The observed dependence is consistent with that derived by analysing literature values of lasing thresholds for type-I InGaAsSb quantum well diodes. Over the wavelength range considered, the Auger coefficient varies from a minimum of $\leq$ 1x10$ ^{16}$cm$^{4}$s$^{-1}$ at 2.1 $μ$m to ~8x10$^{16}$cm$^{4}$s$^{-1}$ at 3.2 $μ$m. △ Less

Submitted 28 June, 2020; originally announced June 2020.

Journal ref: J. Phys. D: Appl. Phys. 54 (2021) 055105

Inducing the controlled rotation of single o MeO DMBI molecules anchored on Au(111)

Authors: Frank Eisenhut, Jörg Meyer, Justus Krüger, Robin Ohmann, Gianaurelio Cuniberti, Francesca Moresco

Abstract: A key step towards building single molecule machines is to control the rotation of molecules and nanostructures step by step on a surface. Here, we used the tunneling electrons coming from the tip of a scanning tunneling microscope to achieve the controlled directed rotation of complex o-MeO-DMBI molecules. We studied the adsorption of single o-MeO-DMBI molecules on Au(111) by scanning tunneling m… ▽ More A key step towards building single molecule machines is to control the rotation of molecules and nanostructures step by step on a surface. Here, we used the tunneling electrons coming from the tip of a scanning tunneling microscope to achieve the controlled directed rotation of complex o-MeO-DMBI molecules. We studied the adsorption of single o-MeO-DMBI molecules on Au(111) by scanning tunneling microscopy at low temperature. The enantiomeric form of the molecule on the surface can be determined by imaging the molecule by STM at high bias voltage. We observed by lateral manipulation experiments that the molecules chemisorb on the surface and are anchored on Au(111) with an oxygen-gold bond via their methoxy-group. Driven by inelastic tunneling electrons, o-MeO-DMBI molecules can controllably rotate, stepwise and unidirectional, either clockwise or counterclockwise depending on their enantiomeric form. △ Less

Submitted 18 May, 2020; originally announced May 2020.

Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics

Authors: Vikrant J. Gokhale, Brian P. Downey, D. Scott Katzer, Neeraj Nepal, Andrew C. Lang, Rhonda M. Stroud, David J. Meyer

Abstract: Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting or spin qubits. The multi-mode composite high-overtone bulk acoustic wave resonator (HBAR) is a popular phonon source well suited for QAD. However, scattering from defects, grain boundaries, and interfacial/surface rough… ▽ More Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting or spin qubits. The multi-mode composite high-overtone bulk acoustic wave resonator (HBAR) is a popular phonon source well suited for QAD. However, scattering from defects, grain boundaries, and interfacial/surface roughness in the composite transducer severely limits the phonon relaxation time in sputter-deposited devices. Here, we grow an epitaxial-HBAR, consisting of a metallic NbN bottom electrode and a piezoelectric GaN film on a SiC substrate. The acoustic impedance-matched epi-HBAR has a power injection efficiency > 99% from transducer to phonon cavity. The smooth interfaces and low defect density reduce phonon losses, yielding fxQ products and phonon lifetimes up to 1.36 x 10^17 Hz and 500 microseconds respectively. The GaN/NbN/SiC epi-HBAR is an electrically actuated, multi-mode phonon source that can be directly interfaced with NbN-based superconducting qubits or SiC-based spin qubits. △ Less

Submitted 24 March, 2020; originally announced March 2020.

Journal ref: Nat Commun 11, 2314 (2020)

Josephson radiation in a superconductor-quantum dot-superconductor junction

Authors: Baptiste Lamic, Julia S. Meyer, Manuel Houzet

Abstract: We investigate the Josephson radiation emitted by a junction made of a quantum dot coupled to two conventional superconductors. Close to resonance, the particle-hole symmetric Andreev states that form in the junction are detached from the continuum above the superconducting gap in the leads, while a gap between them opens near the Fermi level. Under voltage bias, we formulate a stochastic model th… ▽ More We investigate the Josephson radiation emitted by a junction made of a quantum dot coupled to two conventional superconductors. Close to resonance, the particle-hole symmetric Andreev states that form in the junction are detached from the continuum above the superconducting gap in the leads, while a gap between them opens near the Fermi level. Under voltage bias, we formulate a stochastic model that accounts for non-adiabatic processes, which change the occupations of the Andreev states. This model allows calculating the current noise spectrum and determining the Fano factor. Analyzing the finite-frequency noise, we find that the model may exhibit either an integer or a fractional AC Josephson effect, depending on the bias voltage and the size of the gaps in the Andreev spectrum. Our results assess the limitations in using the fractional Josephson radiation as a probe of topology. △ Less

Submitted 9 March, 2020; originally announced March 2020.

Comments: 5+4 pages, 4 + 2 figures

Journal ref: Phys. Rev. Research 2, 033158 (2020)

A novel planar back-gate design to control the carrier concentrations in GaAs-based double quantum wells

Authors: J. Scharnetzky, J. M. Meyer, M. Berl, C. Reichl, L. Tiemann, W. Dietsche, W. Wegscheider

Abstract: The precise control of a bilayer system consisting of two adjacent two-dimensional electron gases (2DEG) is demonstrated by using a novel planar back-gate approach based on ion implantation. This technique overcomes some common problems of the traditional design like the poor 2DEG mobility and leakage currents between the gate and the quantum well. Both bilayers with and without separate contacts… ▽ More The precise control of a bilayer system consisting of two adjacent two-dimensional electron gases (2DEG) is demonstrated by using a novel planar back-gate approach based on ion implantation. This technique overcomes some common problems of the traditional design like the poor 2DEG mobility and leakage currents between the gate and the quantum well. Both bilayers with and without separate contacts have been prepared and tested. Tuning the electron density in one layer while kee** the second 2DEG at fixed density, one observes a dramatic increase of the carrier concentration. This tunneling resonance, which occurs at equal densities of both layers, demonstrates the separated contacts to each individual layer. In another sample with a smaller tunneling barrier and parallel contacted 2DEGs, the transition from a single 2DEG to a bilayer system is investigated at 50 mK in magnetic fields up to 12 T, showing the gate stability in high magnetic fields and very low temperatures. Transitions into an insulating (Wigner crystal) phase are observed in the individual layers in high fields at filling factors below 1/3. The absence of a fractional quantum Hall liquid at filling factor 1/5 in our structure seems to be a consequence of confining the electrons in quantum wells rather than at interfaces. The observed metal-insulator transitions appear to be nearly unaffected by the presence of the second layer separated by a barrier which is only 3 nm thick. We believe that this planar back-gate design holds great promise to produce controllable bilayers suitable to investigate the exotic (non-abelian) properties of correlated states. △ Less

Submitted 13 February, 2020; originally announced February 2020.

Comments: 9 pages, 12 figures

Dynamical spin polarization of excess quasi-particles in superconductors

Authors: Julia S. Meyer, Manuel Houzet, Yuli V. Nazarov

Abstract: We show that the annihilation dynamics of excess quasi-particles in superconductors may result in the spontaneous formation of large spin-polarized clusters. This presents a novel scenario for spontaneous spin polarization. We estimate the relevant scales for aluminum, finding the feasibility of clusters with total spin $S \simeq 10^4 \hbar$ that could be spread over microns. The fluctuation dynam… ▽ More We show that the annihilation dynamics of excess quasi-particles in superconductors may result in the spontaneous formation of large spin-polarized clusters. This presents a novel scenario for spontaneous spin polarization. We estimate the relevant scales for aluminum, finding the feasibility of clusters with total spin $S \simeq 10^4 \hbar$ that could be spread over microns. The fluctuation dynamics of such large spins may be detected by measuring the flux noise in a loop hosting a cluster. △ Less

Submitted 23 December, 2019; originally announced December 2019.

Comments: 5+3 pages, 2+1 figures

Journal ref: Phys. Rev. Lett. 125, 097006 (2020)

Quantifying transmission electron microscopy irradiation effects using two-dimensional materials

Authors: Toma Susi, Jannik C. Meyer, Jani Kotakoski

Abstract: Important recent advances in transmission electron microscopy instrumentation and capabilities have made it indispensable for atomic-scale materials characterization. At the same time, the availability of two-dimensional materials has provided ideal samples where each atom or vacancy can be resolved. Recent studies have also revealed new possibilities for a different application of focused electro… ▽ More Important recent advances in transmission electron microscopy instrumentation and capabilities have made it indispensable for atomic-scale materials characterization. At the same time, the availability of two-dimensional materials has provided ideal samples where each atom or vacancy can be resolved. Recent studies have also revealed new possibilities for a different application of focused electron irradiation: the controlled manipulation of structures and even individual atoms. Evaluating the full range of future possibilities for this method requires a precise physical understanding of the interactions of electrons with energies as low as 15 keV now used in (scanning) transmission electron microscopy, becoming feasible due to advances both in experimental techniques and in theoretical models. We summarize the state of current knowledge of the underlying physical processes based on the latest results on two-dimensional materials, with a focus on the physical principles of the electron-matter interaction, rather than the material-specific irradiation-induced defects it causes. △ Less

Submitted 4 December, 2019; originally announced December 2019.

Comments: 18 pages, 2 boxes, 2 figures, 1 table

Journal ref: Nature Review Physics 1, 397-405 (2019)

Conductance quantization in topological Josephson trijunctions

Authors: Julia S. Meyer, Manuel Houzet

Abstract: The Josephson current flowing in a junction between two superconductors is a striking manifestation of macroscopic quantum coherence, with applications in metrology and quantum information. This equilibrium current is related with the formation of Andreev states localized in the junction, whose energy depends periodically on the superconducting phase difference. Topology emerged as a guide for pre… ▽ More The Josephson current flowing in a junction between two superconductors is a striking manifestation of macroscopic quantum coherence, with applications in metrology and quantum information. This equilibrium current is related with the formation of Andreev states localized in the junction, whose energy depends periodically on the superconducting phase difference. Topology emerged as a guide for predicting exotic properties of Andreev states. In particular, topological superconductors host Majorana modes at their ends. Then, in a junction with such leads, the hybridization of two Majorana modes results in an Andreev state with a period-doubling of its energy-phase dependence. Furthermore, topologically protected crossings between Andreev states in junctions with more than two leads may be revealed through a quantized transconductance. The prediction motivated recent efforts to fabricate multi-terminal junctions. Here we combine both topological effects to predict a robust non-vanishing quantized transconductance in trijunctions with topological leads. Such devices are envisioned to reveal the anyonic nature of Majorana states through their braiding. Our prediction can be used to assess that a given junction is indeed suitable to perform its braiding function. △ Less

Submitted 3 June, 2021; v1 submitted 18 November, 2019; originally announced November 2019.

Comments: 10 pages, 9 figures

Journal ref: Phys. Rev. B 103, 174504 (2021)

Resolving the Nucleation Stage in Atomic Layer Deposition of Hafnium Oxide on Graphene

Authors: Bernhard C. Bayer, Adrianus I. Aria, Dominik Eder, Stephan Hofmann, Jannik C. Meyer

Abstract: The integration of two-dimensional (2D) materials with functional non-2D materials such as metal oxides is of key importance for many applications, but underlying mechanisms for such non-2D/2D interfacing remain largely elusive at the atomic scale. To address this, we here investigate the nucleation stage in atomic layer deposition (ALD) of the important metal oxide HfO2 on chemical vapor deposite… ▽ More The integration of two-dimensional (2D) materials with functional non-2D materials such as metal oxides is of key importance for many applications, but underlying mechanisms for such non-2D/2D interfacing remain largely elusive at the atomic scale. To address this, we here investigate the nucleation stage in atomic layer deposition (ALD) of the important metal oxide HfO2 on chemical vapor deposited graphene using atomically resolved and element specific scanning transmission electron microscopy (STEM). To avoid any deleterious influence of polymer residues from pre-ALD graphene transfers we employ a substrate-assisted ALD process directly on the as grown graphene still remaining on its Cu growth catalyst support. Thereby we resolve at the atomic scale key factors governing the integration of non-2D metal oxides with 2D materials by ALD: Particular to our substrate-assisted ALD process we find a graphene-layer-dependent catalytic participation of the supporting Cu catalyst in the ALD process. We further confirm at high resolution the role of surface irregularities such as steps between graphene layers on oxide nucleation. Employing the energy transfer from the scanning electron beam to in situ crystallize the initially amorphous ALD HfO2 on graphene, we observe HfO2 crystallization to non-equilibrium HfO2 polymorphs (cubic/tetragonal). Finally our data indicates a critical role of the graphene's atmospheric adventitious carbon contamination on the ALD process whereby this contamination acts as an unintentional seeding layer for metal oxide ALD nucleation on graphene under our conditions. As atmospheric adventitious carbon contamination is hard to avoid in any scalable 2D materials processing, this is a critical factor in ALD recipe development for 2D materials coating. Combined our work highlights several key mechanisms underlying scalable ALD oxide growth on 2D materials. △ Less

Submitted 2 September, 2019; originally announced September 2019.

Isolating hydrogen in hexagonal boron nitride bubbles by a plasma treatment

Authors: Li He, Huishan Wang, Lingxiu Chen, Xiujun Wang, Hong Xie, Chengxin Jiang, Chen Li, Kenan Elibol, Jannik Meyer, Kenji Watanabe, Takashi Taniguchi, Zhangting Wu, Wenhui Wang, Zhenhua Ni, Xiangshui Miao, Chi Zhang, Daoli Zhang, Haomin Wang, Xiaoming Xie

Abstract: Atomically thin hexagonal boron nitride (h-BN) is often regarded as an elastic film that is impermeable to gases. The high stabilities in thermal and chemical properties allow h-BN to serve as a gas barrier under extreme conditions.In this work, we demonstrate the isolation of hydrogen in bubbles of h-BN via plasma treatment.Detailed characterizations reveal that the substrates do not show chemica… ▽ More Atomically thin hexagonal boron nitride (h-BN) is often regarded as an elastic film that is impermeable to gases. The high stabilities in thermal and chemical properties allow h-BN to serve as a gas barrier under extreme conditions.In this work, we demonstrate the isolation of hydrogen in bubbles of h-BN via plasma treatment.Detailed characterizations reveal that the substrates do not show chemical change after treatment. The bubbles are found to withstand thermal treatment in air,even at 800 degree celsius. Scanning transmission electron microscopy investigation shows that the h-BN multilayer has a unique aligned porous stacking nature, which is essential for the character of being transparent to atomic hydrogen but impermeable to hydrogen molecules. We successfully demonstrated the extraction of hydrogen gases from gaseous compounds or mixtures containing hydrogen element. The successful production of hydrogen bubbles on h-BN flakes has potential for further application in nano/micro-electromechanical systems and hydrogen storage. △ Less

Submitted 5 July, 2019; originally announced July 2019.

Comments: 55 pages, 33figures

Journal ref: Nature Communicationsvolume 10, 2815 (2019)

Temperature-Dependent Lifetimes of Low-Frequency Adsorbate Modes from Non-Equilibrium Molecular Dynamics Simulations

Authors: Francesco Nattino, Jörg Meyer

Abstract: We present calculations on the dam** of a low-frequency adsorbate mode on a metal surface, namely the frustrated translation of Na on Cu(100). For the first time, vibrational lifetimes of excited adlayers are extracted from non-equilibrium molecular dynamics calculations accounting for both the phononic and the electronic dissipation channels. The relative contributions of the two dam** mechan… ▽ More We present calculations on the dam** of a low-frequency adsorbate mode on a metal surface, namely the frustrated translation of Na on Cu(100). For the first time, vibrational lifetimes of excited adlayers are extracted from non-equilibrium molecular dynamics calculations accounting for both the phononic and the electronic dissipation channels. The relative contributions of the two dam** mechanisms, which we show to be additive, are found to disagree with textbook predictions. A simple model based on separable harmonic and anharmonic contributions is able to semi-quantitatively reproduce the temperature dependence of the computed lifetimes. △ Less

Submitted 27 June, 2019; originally announced June 2019.

Scanning transmission electron microscopy under controlled low-pressure atmospheres

Authors: Gregor T. Leuthner, Stefan Hummel, Clemens Mangler, Timothy J. Pennycook, Toma Susi, Jannik C. Meyer, Jani Kotakoski

Abstract: Transmission electron microscopy (TEM) is carried out in vacuum to minimize the interaction of the imaging electrons with gas molecules while passing through the microscope column. Nevertheless, in typical devices, the pressure remains at 10^-7 mbar or above, providing a large number of gas molecules for the electron beam to crack, which can lead to structural changes in the sample. Here, we descr… ▽ More Transmission electron microscopy (TEM) is carried out in vacuum to minimize the interaction of the imaging electrons with gas molecules while passing through the microscope column. Nevertheless, in typical devices, the pressure remains at 10^-7 mbar or above, providing a large number of gas molecules for the electron beam to crack, which can lead to structural changes in the sample. Here, we describe experiments carried out in a modified scanning TEM (STEM) instrument, based on the Nion UltraSTEM 100. In this instrument, the base pressure at the sample is around 2x10^-10 mbar, and can be varied up to 10^-6 mbar through introduction of gases directly into the objective area while maintaining atomic resolution imaging conditions. We show that air leaked into the microscope column during the experiment is efficient in cleaning graphene samples from contamination, but ineffective in damaging the pristine lattice. Our experiments also show that exposure to O2 and H2O lead to a similar result, oxygen providing an etching effect nearly twice as efficient as water, presumably due to the two O atoms per molecule. H2 and N2 environments have no influence on etching. These results show that the residual gas environment in typical TEM instruments can have a large influence on the observations, and show that chemical etching of carbon-based structures can be effectively carried out with oxygen. △ Less

Submitted 24 January, 2019; v1 submitted 10 November, 2018; originally announced November 2018.

Comments: 15 pages, 7 figure

Majorana-Weyl crossings in topological multi-terminal junctions

Authors: Manuel Houzet, Julia S. Meyer

Abstract: We analyze the Andreev spectrum in a four-terminal Josephson junction between one-dimensional topological superconductors in class D. We find that a topologically protected crossing in the space of three superconducting phase differences can occur between the two lowest Andreev bound states. This crossing can be detected through the transconductance quantization, in units of $2e^2/h$, between two… ▽ More We analyze the Andreev spectrum in a four-terminal Josephson junction between one-dimensional topological superconductors in class D. We find that a topologically protected crossing in the space of three superconducting phase differences can occur between the two lowest Andreev bound states. This crossing can be detected through the transconductance quantization, in units of $2e^2/h$, between two voltage-biased terminals. Our prediction provides yet another example of topology in multi-terminal Josephson junctions. We discuss possible realizations of such junctions with semiconducting crossed nanowires and with quantum-spin Hall insulators. △ Less

Submitted 23 October, 2018; originally announced October 2018.

Comments: 7 pages, 3 figures

Journal ref: Phys. Rev. B 100, 014521 (2019)

Direct visualization of the 3D structure of silicon impurities in graphene

Authors: Christoph Hofer, Viera Skakalova, Mohammad Reza Ahmadpour Monazam, Clemens Mangler, Jani Kotakoski, Toma Susi, Jannik C. Meyer

Abstract: We directly visualize the three-dimensional (3D) geometry and dynamics of silicon impurities in graphene as well as their dynamics by aberration-corrected scanning transmission electron microscopy. By acquiring images when the sample is tilted, we show that an asymmetry of the atomic position of the heteroatom in the projection reveals the non-planarity of the structure. From a sequence of images,… ▽ More We directly visualize the three-dimensional (3D) geometry and dynamics of silicon impurities in graphene as well as their dynamics by aberration-corrected scanning transmission electron microscopy. By acquiring images when the sample is tilted, we show that an asymmetry of the atomic position of the heteroatom in the projection reveals the non-planarity of the structure. From a sequence of images, we further demonstrate that the Si atom switches between up- and down- configurations with respect to the graphene plane, with an asymmetric cross-section. We further analyze the 3D structure and dynamics of a silicon tetramer in graphene. Our results clarify the out-of-plane structure of impurities in graphene by direct experimental observation and open a new route to study their dynamics in three dimensions. △ Less

Submitted 24 September, 2018; originally announced September 2018.

Weak localization in transition metal dichalcogenide monolayers and their heterostructures with graphene

Authors: Stefan Ilic, Julia S. Meyer, Manuel Houzet

Abstract: We calculate the interference correction to the conductivity of doped transition metal dichalcogenide (TMDC) monolayers. Because of the interplay between valley structure and intrinsic spin-orbit coupling (SOC), these materials exhibit a rich weak localization (WL) behavior that is qualitatively different from conventional metals or similar two-dimensional materials such as graphene. Our results c… ▽ More We calculate the interference correction to the conductivity of doped transition metal dichalcogenide (TMDC) monolayers. Because of the interplay between valley structure and intrinsic spin-orbit coupling (SOC), these materials exhibit a rich weak localization (WL) behavior that is qualitatively different from conventional metals or similar two-dimensional materials such as graphene. Our results can also be used to describe graphene/TMDC heterostructures, where the SOC is induced in the graphene sheet. We discuss new parameter regimes that go beyond existing theories, and can be used to interpret recent experiments in order to assess the strength of SOC and disorder. Furthermore, we show that an in-plane Zeeman field can be used to distinguish the contributions of different kinds of SOC to the WL magnetoconductance. △ Less

Submitted 14 April, 2019; v1 submitted 17 August, 2018; originally announced August 2018.

Comments: 15 pages, 6 figures

Journal ref: Phys. Rev. B 99, 205407 (2019)

Intrinsic core level photoemission of suspended graphene

Authors: Toma Susi, Mattia Scardamaglia, Kimmo Mustonen, Andreas Mittelberger, Mohamed Al-Hada, Matteo Amati, Hikmet Sezen, Patrick Zeller, Ask H. Larsen, Clemens Mangler, Jannik C. Meyer, Luca Gregoratti, Carla Bittencourt, Jani Kotakoski

Abstract: X-ray photoelectron spectroscopy of graphene is important both for its characterization and as a model for other carbon materials. Despite great recent interest, the intrinsic photoemission of its single layer has not been unambiguously measured, nor is the layer-dependence in free-standing multilayers accurately determined. We combine scanning transmission electron microscopy and Raman spectrosco… ▽ More X-ray photoelectron spectroscopy of graphene is important both for its characterization and as a model for other carbon materials. Despite great recent interest, the intrinsic photoemission of its single layer has not been unambiguously measured, nor is the layer-dependence in free-standing multilayers accurately determined. We combine scanning transmission electron microscopy and Raman spectroscopy with synchrotron-based scanning photoelectron microscopy to characterize the same areas of suspended graphene samples down to the atomic level. This allows us to assign spectral signals to regions of precisely known layer number and purity. The core level binding energy of the monolayer is measured at 284.70 eV, thus 0.28 eV higher than that of graphite, with intermediate values found for few layers. This trend is reproduced by density functional theory with or without explicit van der Waals interactions, indicating that intralayer charge rearrangement dominates, but in our model of static screening the magnitudes of the shifts are underestimated by half. △ Less

Submitted 31 July, 2018; originally announced July 2018.

Comments: 5 pages, 4 figures, 1 table

Journal ref: Phys. Rev. Materials 2, 074005 (2018)

Revealing the 3D Structure of Graphene Defects

Authors: Christoph Hofer, Christian Kramberger, Mohammad Reza Ahmadpour Monazam, Clemens Mangler, Andreas Mittelberger, Giacomo Argentero, Jani Kotakoski, Jannik C. Meyer

Abstract: We demonstrate insights into the three-dimensional structure of defects in graphene, in particular grain boundaries, obtained via a new approach from two transmission electron microscopy images recorded at different angles. The structure is obtained through an optimization process where both the atomic positions as well as the simulated imaging parameters are iteratively changed until the best pos… ▽ More We demonstrate insights into the three-dimensional structure of defects in graphene, in particular grain boundaries, obtained via a new approach from two transmission electron microscopy images recorded at different angles. The structure is obtained through an optimization process where both the atomic positions as well as the simulated imaging parameters are iteratively changed until the best possible match to the experimental images is found. We first demonstrate that this method works using an embedded defect in graphene that allows direct comparison to the computationally predicted three-dimensional shape. We then applied the method to a set of grain boundary structures with misorientation angles nearly spanning the whole available range (2.6-29.8°). The measured height variations at the boundaries reveal a strong correlation with the misorientation angle with lower angles resulting in stronger corrugation and larger kink angles. Our results allow for the first time a direct comparison with theoretical predictions for the corrugation at grain boundaries and we show that the measured kink angles are significantly smaller than the largest predicted ones. △ Less

Submitted 2 July, 2018; originally announced July 2018.

Comments: submitted

Noise Measurements of High-Speed, Light-Emitting GaN Resonant-Tunneling Diodes

Authors: E. R. Brown, W-D. Zhang, T. A. Growden, P. R. Berger, R. Droopad, D. F. Storm, D. J. Meyer

Abstract: We report here the first RF noise measurements on two designs of n-doped GaN/AlN double-barrier resonant tunneling diodes (RTDs), each having a room-temperature negative differential resistance (NDR) and also strong near-UV light emission. The measurements are made with a standard, un-isolated RF receiver and calibration is made using a substitution-resistor/hot-cold radiometric technique which wo… ▽ More We report here the first RF noise measurements on two designs of n-doped GaN/AlN double-barrier resonant tunneling diodes (RTDs), each having a room-temperature negative differential resistance (NDR) and also strong near-UV light emission. The measurements are made with a standard, un-isolated RF receiver and calibration is made using a substitution-resistor/hot-cold radiometric technique which works in the positive differential resistance (PDR) region but not the NDR region. A high-quality InGaAs/AlAs double-barrier RTD is used as a control sample and displays shot noise suppression down to $Γ\approx$0.5 in the PDR region, as expected. The GaN/AlN RTDs display both shot-noise enhancement and suppression in the PDR regions, but no obvious sign of sudden shot-noise enhancement in the threshold bias region of light emission. This supports the hypothesis that the holes required for light emission are created by electronic (Zener) interband tunneling, not impact ionization. Further the minimum shot-noise factor of $Γ\sim$ 0.34 suggests that the GaN/AlN RTDs are acting like triple-barrier devices. △ Less

Submitted 24 June, 2018; originally announced June 2018.

Comments: 10 pages, 5 figures

Analysis of point defects in graphene using low dose scanning transmission electron microscopy imaging and maximum likelihood reconstruction

Authors: Christian Kramberger, Andreas Mittelberger, Christoph Hofer, Jannik C. Meyer

Abstract: Freestanding graphene displays an outstanding resilience to electron irradiation at low electron energies. Point defects in graphene are, however, subject to beam driven dynamics. This means that high resolution micrographs of point defects, which usually require a high electron irradiation dose might not represent the intrinsic defect population. Here, we capture the inital defects formed by ejec… ▽ More Freestanding graphene displays an outstanding resilience to electron irradiation at low electron energies. Point defects in graphene are, however, subject to beam driven dynamics. This means that high resolution micrographs of point defects, which usually require a high electron irradiation dose might not represent the intrinsic defect population. Here, we capture the inital defects formed by ejecting carbon atoms under electron irradiation, by imaging with very low doses and subsequent reconstruction of the frequently occuring defects via a maximum likelihood algorithm. △ Less

Submitted 4 May, 2018; originally announced May 2018.

Comments: 9 pages 5 figures

Journal ref: Phys. Status Solidi B, 254: 1770257. (2017)

Nanopore fabrication and characterization by helium ion microscopy

Authors: D. Emmrich, A. Beyer, A. Nadzeyka, S. Bauerdick, J. C. Meyer, J. Kotakoski, A. Gölzhäuser

Abstract: The Helium Ion Microscope (HIM) has the capability to image small features with a resolution down to 0.35 nm due to its highly focused gas field ionization source and its small beam-sample interaction volume. In this work, the focused helium ion beam of a HIM is utilized to create nanopores with diameters down to 1.3 nm. It will be demonstrated that nanopores can be milled into silicon nitride, ca… ▽ More The Helium Ion Microscope (HIM) has the capability to image small features with a resolution down to 0.35 nm due to its highly focused gas field ionization source and its small beam-sample interaction volume. In this work, the focused helium ion beam of a HIM is utilized to create nanopores with diameters down to 1.3 nm. It will be demonstrated that nanopores can be milled into silicon nitride, carbon nanomembranes (CNMs) and graphene with well-defined aspect ratio. To image and characterize the produced nanopores, helium ion microscopy and high resolution scanning transmission electron microscopy were used. The analysis of the nanopore's growth behavior, allows inferring on the profile of the helium ion beam. △ Less

Submitted 1 May, 2018; originally announced May 2018.

Journal ref: APPLIED PHYSICS LETTERS 108, 163103 (2016)

Structure evolution of hcp/ccp metal oxide interfaces in solid-state reactions

Authors: C. Li, G. Habler, T. Griffiths, A. Rečnik, P. Jeřábek, L. C. Götze, C. Mangler, T. J. Pennycook, J. Meyer, R. Abart

Abstract: The structure of crystalline interfaces plays an important role in solid-state reactions. The Al2O3/MgAl2O4/MgO system provides an ideal model system for investigating the mechanisms underlying the migration of interfaces during interface reaction. MgAl2O4 layers have been grown between Al2O3 and MgO, and the atomic structure of Al2O3/MgAl2O4 interfaces at different growth stages was characterized… ▽ More The structure of crystalline interfaces plays an important role in solid-state reactions. The Al2O3/MgAl2O4/MgO system provides an ideal model system for investigating the mechanisms underlying the migration of interfaces during interface reaction. MgAl2O4 layers have been grown between Al2O3 and MgO, and the atomic structure of Al2O3/MgAl2O4 interfaces at different growth stages was characterized using aberration-corrected scanning transmission electron microscopy. The oxygen sublattice transforms from hexagonal close-packed (hcp) stacking in Al2O3 to cubic close-packed (ccp) stacking in MgAl2O4. Partial dislocations associated with steps are observed at the interface. At the reaction-controlled early growth stages, such partial dislocations coexist with the edge dislocations. However, at the diffusion-controlled late growth stages, such partial dislocations are dominant. The observed structures indicate that progression of the Al2O3/MgAl2O4 interface into Al2O3 is accomplished by the glide of partial dislocations accompanied by the exchange of Al3+ and Mg2+ cations. The interface migration may be envisaged as a plane-by-plane zipper-like motion, which repeats along the interface facilitating its propagation. MgAl2O4 grains can adopt two crystallographic orientations with a twinning orientation relationship, and grow by dislocations gliding in opposite directions. Where the oppositely propagating partial dislocations and interface steps meet, interlinked twin boundaries and incoherent Σ3 grain boundaries form. The newly grown MgAl2O4 grains compete with each other, leading to a growth-selection and successive coarsening of the MgAl2O4 grains. This understanding could help to interpret the interface reaction or phase transformation of a wide range of materials that exhibit a similar hcp/ccp transition. △ Less

Submitted 19 December, 2018; v1 submitted 14 April, 2018; originally announced April 2018.

Journal ref: Acta Crystallographica Section A (2018). A74, 466-480