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Mott resistive switching initiated by topological defects
Authors:
Alessandra Milloch,
Ignacio Figueruelo-Campanero,
Wei-Fan Hsu,
Selene Mor,
Simon Mellaerts,
Francesco Maccherozzi,
Larissa Ishibe Veiga,
Sarnjeet S. Dhesi,
Mauro Spera,
** Won Seo,
Jean-Pierre Locquet,
Michele Fabrizio,
Mariela Menghini,
Claudio Giannetti
Abstract:
Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, resistive memories and brain-inspired computation, the nature of the local stochastic fluctuations that drive the formation of me…
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Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, resistive memories and brain-inspired computation, the nature of the local stochastic fluctuations that drive the formation of metallic nuclei out of the insulating state has remained hidden. Here, using operando X-ray nano-imaging, we have captured the early-stages of resistive switching in a V2O3-based device under working conditions. V2O3 is a paradigmatic Mott material, which undergoes a first-order metal-to-insulator transition coupled to a lattice transformation that breaks the threefold rotational symmetry of the rhombohedral metal phase. We reveal a new class of volatile electronic switching triggered by nanoscale topological defects of the lattice order parameter of the insulating phase. Our results pave the way to the use of strain engineering approaches to manipulate topological defects and achieve the full control of the electronic Mott switching. The concept of topology-driven reversible electronic transition is of interest for a broad class of quantum materials, comprising transition metal oxides, chalcogenides and kagome metals, that exhibit first-order electronic transitions coupled to a symmetry-breaking order.
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Submitted 1 February, 2024;
originally announced February 2024.
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Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films
Authors:
Simon Mellaerts,
Claudio Bellani,
Wei-Fan Hsu,
Alberto Binetti,
Koen Schouteden,
Maria Recaman-Payo,
Mariela Menghini,
Juan Rubio Zuazo,
Jesús López Sánchez,
** Won Seo,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
Dimensional confinement has shown to be an effective strategy to tune competing degrees of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal vanadium sesquioxide (V2O3) by means of oxygen-assisted molecular beam epitaxy. This led to a series of high-quality epitaxial ultrathin V2O3 films down to unit cell thickness, enabling the study of the intrinsic electron correlat…
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Dimensional confinement has shown to be an effective strategy to tune competing degrees of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal vanadium sesquioxide (V2O3) by means of oxygen-assisted molecular beam epitaxy. This led to a series of high-quality epitaxial ultrathin V2O3 films down to unit cell thickness, enabling the study of the intrinsic electron correlations upon confinement. By electrical and optical measurements, we demonstrate a dimensional confinement-induced metal-insulator transition in these ultrathin films. We shed light on the Mott-Hubbard nature of this transition, revealing an abrupt vanishing of the quasiparticle weight as demonstrated by photoemission spectroscopy. Furthermore, we prove that dimensional confinement acts as an effective out-of-plane stress. This highlights the structural component of correlated oxides in a confined architecture, while opening an avenue to control both in-plane and out-of-plane lattice components by epitaxial strain and confinement, respectively.
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Submitted 7 December, 2023;
originally announced December 2023.
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Coherent control of the orbital occupation driving the insulator-to-metal Mott transition in V$_2$O$_3$
Authors:
Paolo Franceschini,
Veronica R. Policht,
Alessandra Milloch,
Andrea Ronchi,
Selene Mor,
Simon Mellaerts,
Wei-Fan Hsu,
Stefania Pagliara,
Gabriele Ferrini,
Francesco Banfi,
Michele Fabrizio,
Mariela Menghini,
Jean-Pierre Locquet,
Stefano Dal Conte,
Giulio Cerullo,
Claudio Giannetti
Abstract:
Managing light-matter interactions on timescales faster than the loss of electronic coherence is key for achieving full quantum control of the final products in solid-solid transformations. In this work, we demonstrate coherent electronic control of the photoinduced insulator-to-metal transition in the prototypical Mott insulator V$_2$O$_3$. Selective excitation of a specific interband transition…
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Managing light-matter interactions on timescales faster than the loss of electronic coherence is key for achieving full quantum control of the final products in solid-solid transformations. In this work, we demonstrate coherent electronic control of the photoinduced insulator-to-metal transition in the prototypical Mott insulator V$_2$O$_3$. Selective excitation of a specific interband transition with two phase-locked light pulses manipulates the orbital occupation of the correlated bands in a way that depends on the coherent evolution of the photoinduced superposition of states. A comparison between experimental results and numerical solutions of the optical Bloch equations provides an electronic coherence time on the order of 5 fs. Temperature-dependent experiments suggest that the electronic coherence time is enhanced in the vicinity of the insulator-to-metal transition critical temperature, thus highlighting the role of fluctuations in determining the electronic coherence. These results open new routes to selectively switch the functionalities of quantum materials and coherently control solid-solid electronic transformations.
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Submitted 12 May, 2023; v1 submitted 3 November, 2022;
originally announced November 2022.
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On the origin of supertetragonality in BaTiO$_3$
Authors:
Simon Mellaerts,
** Won Seo,
Valeri Afanas'ev,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
Understanding ferroelectricity is of both fundamental and technological importance to further stimulate the development of new materials designs and manipulations. Here, we perform an in-depth first-principle study on the well-known ferroelectric barium titanate BaTiO$_{3}$ under a hydrostatic negative pressure, showing an isosymmetric phase transition to a supertetragonal phase with high $c/a$ ra…
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Understanding ferroelectricity is of both fundamental and technological importance to further stimulate the development of new materials designs and manipulations. Here, we perform an in-depth first-principle study on the well-known ferroelectric barium titanate BaTiO$_{3}$ under a hydrostatic negative pressure, showing an isosymmetric phase transition to a supertetragonal phase with high $c/a$ ratio of $\sim1.3$. The microscopic origin and driving mechanisms of this phase transition are identified as a drastic change of the covalently $π$-bonded electrons. These findings provide guidance in the search for new supertetragonal phases, with great opportunities for novel multiferroic materials; and can be generalized in the understanding of other isosymmetric phase transitions.
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Submitted 19 January, 2022;
originally announced January 2022.
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An efficient direct band-gap transition in germanium by three-dimensional strain
Authors:
Simon Mellaerts,
Valeri Afanasiev,
** Won Seo,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
Complementary to the development of highly three-dimensional (3D) integrated circuits in the continuation of Moore's law, there has been a growing interest in new 3D deformation strategies to improve device performance. To continue this search for new 3D deformation techniques, it is essential to explore beforehand - using computational predictive methods - which strain tensor leads to the desired…
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Complementary to the development of highly three-dimensional (3D) integrated circuits in the continuation of Moore's law, there has been a growing interest in new 3D deformation strategies to improve device performance. To continue this search for new 3D deformation techniques, it is essential to explore beforehand - using computational predictive methods - which strain tensor leads to the desired properties. In this work, we study germanium (Ge) under an isotropic 3D strain on the basis of first-principle methods. The transport and optical properties are studied by a fully ab initio Boltzmann transport equation and many-body Bethe-Salpeter equation (BSE) approach, respectively. Our findings show that a direct band gap in Ge could be realized with only 0.34% triaxial tensile strain (negative pressure) and without the challenges associated with Sn do**. At the same time a significant increase in refractive index and carrier mobility - particularly for electrons - is observed. These results demonstrate that there is a huge potential in exploring the 3D deformation space for semiconductors - and potentially many other materials - in order to optimize their properties.
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Submitted 8 June, 2021; v1 submitted 24 February, 2021;
originally announced February 2021.
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Quarter-filled Kane-Mele Hubbard model: Dirac half-metals
Authors:
Simon Mellaerts,
Ruishen Meng,
Valeri Afanasiev,
** Won Seo,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
Recent experimental success in the realization of two-dimensional (2D) magnetism has stimulated the search for new magnetic 2D materials with strong magnetic anisotropy and high Curie temperature. One promising subgroup of 2D magnetic systems are Dirac half-metals (DHM) which have gained a lot of interest recently, as they host a high-temperature quantum anomalous Hall effect (QAHE). This article…
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Recent experimental success in the realization of two-dimensional (2D) magnetism has stimulated the search for new magnetic 2D materials with strong magnetic anisotropy and high Curie temperature. One promising subgroup of 2D magnetic systems are Dirac half-metals (DHM) which have gained a lot of interest recently, as they host a high-temperature quantum anomalous Hall effect (QAHE). This article discusses predictions for intrinsic DHMs and identifies them as realizations of the Kane-Mele Hubbard model at quarter filling. This proposed unification contributes to a firmer understanding of these materials and suggests pathways for the discovery of new DHM systems.
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Submitted 9 January, 2021;
originally announced January 2021.
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Two-dimensional honeycomb-kagome V2O3: a robust room-temperature magnetic Chern insulator interfaced with graphene
Authors:
Simon Mellaerts,
Ruishen Meng,
Mariela Menghini,
Valeri Afanasiev,
** Won Seo,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
The possibility of dissipationless chiral edge states without the need of an external magnetic field in the quantum anomalous Hall effect (QAHE) offers a great potential in electronic/spintronic applications. The biggest hurdle for the realization of a room-temperature magnetic Chern insulator is to find a structurally stable material with a sufficiently large energy gap and Curie temperature that…
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The possibility of dissipationless chiral edge states without the need of an external magnetic field in the quantum anomalous Hall effect (QAHE) offers a great potential in electronic/spintronic applications. The biggest hurdle for the realization of a room-temperature magnetic Chern insulator is to find a structurally stable material with a sufficiently large energy gap and Curie temperature that can be easily implemented in electronic devices. This work based on first-principle methods shows that a single atomic layer of V2O3 with honeycomb-kagome (HK) lattice is structurally stable with a spin-polarized Dirac cone which gives rise to a room-temperature QAHE by the existence of an atomic on-site spin-orbit coupling (SOC). Moreover, by a strain and substrate study, it was found that the quantum anomalous Hall system is robust against small deformations and can be supported by a graphene substrate.
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Submitted 8 June, 2021; v1 submitted 6 January, 2021;
originally announced January 2021.
