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Controlling the balance between remote, pinhole, and van der Waals epitaxy of Heusler films on graphene/sapphire
Authors:
Dongxue Du,
Taehwan Jung,
Sebastian Manzo,
Zachary T. LaDuca,
Xiaoqi Zheng,
Katherine Su,
Jessica L. McChesney,
Michael S. Arnold,
Jason K. Kawasaki
Abstract:
Remote epitaxy on monolayer graphene is promising for synthesis of highly lattice mismatched materials, exfoliation of free-standing membranes, and re-use of expensive substrates. However, clear experimental evidence of a remote mechanism remains elusive. In many cases, due to contaminants at the transferred graphene/substrate interface, alternative mechanisms such as pinhole-seeded lateral epitax…
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Remote epitaxy on monolayer graphene is promising for synthesis of highly lattice mismatched materials, exfoliation of free-standing membranes, and re-use of expensive substrates. However, clear experimental evidence of a remote mechanism remains elusive. In many cases, due to contaminants at the transferred graphene/substrate interface, alternative mechanisms such as pinhole-seeded lateral epitaxy or van der Waals epitaxy can explain the resulting exfoliatable single-crystalline films. Here, we find that growth of the Heusler compound GdPtSb on clean graphene on sapphire substrates produces a 30 degree rotated epitaxial superstructure that cannot be explained by pinhole or van der Waals epitaxy. With decreasing growth temperature the volume fraction of this 30 degree domain increases compared to the direct epitaxial 0 degree domain, which we attribute to slower surface diffusion at low temperature that favors remote epitaxy, compared to faster surface diffusion at high temperature that favors pinhole epitaxy. We further show that careful graphene/substrate annealing ($T\sim 700 ^\circ C$) and consideration of the film/substrate vs film/graphene lattice mismatch are required to obtain epitaxy to the underlying substrate for a variety of other Heusler films, including LaPtSb and GdAuGe. The 30 degree rotated superstructure provides a possible experimental fingerprint of remote epitaxy since it is inconsistent with the leading alternative mechanisms.
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Submitted 11 August, 2022;
originally announced August 2022.
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Antiferromagnetic order in Co-doped Fe$_5$GeTe$_2$ probed by resonant magnetic x-ray scattering
Authors:
Xiang Chen,
Enrico Schierle,
Yu He,
Mayia Vranas,
John William Freeland,
Jessica. L. McChesney,
Ramamoorthy Ramesh,
Robert J. Birgeneau,
Alex Frano
Abstract:
The quasi-two-dimensional van der Waals magnet Fe$_{5-δ}$GeTe$_2$ has emerged as a promising platform for electronic and spintronic functionalities at room temperature, owing to its large ferromagnetic ordering temperature $T_{\text{C}}$ $\sim$ 315 K. Interestingly, by cobalt (Co) substitution of iron in F5GT, $i.e.$ $({\text{Fe}}_{1-x}{\text{Co}}_x)_{5-δ}{\text{GeTe}}_2$ (Co-F5GT), not only can i…
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The quasi-two-dimensional van der Waals magnet Fe$_{5-δ}$GeTe$_2$ has emerged as a promising platform for electronic and spintronic functionalities at room temperature, owing to its large ferromagnetic ordering temperature $T_{\text{C}}$ $\sim$ 315 K. Interestingly, by cobalt (Co) substitution of iron in F5GT, $i.e.$ $({\text{Fe}}_{1-x}{\text{Co}}_x)_{5-δ}{\text{GeTe}}_2$ (Co-F5GT), not only can its magnetic transition temperature be further enhanced, but the magnetic and structural ground states can also be tuned. Specifically, an antiferromagnetic (AFM) order is induced beyond the Co do** level $x \ge 0.4$. Here, we investigate the magnetic properties of a Co-F5GT single crystal at $x = 0.45(1)$, by utilizing the element specific, resonant magnetic x-ray scattering technique. Our study reveals an A-type, Ising-like AFM ground state, with a transition temperature $T_{\text{N}}$ $\sim$ 340 K. In addition, our work unveils an important contribution from Co magnetic moments to the magnetic order. The application of the in-plane magnetic fields gradually polarize the spin moments along the field direction, but without inducing incommensurate spin texture(s).
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Submitted 28 July, 2022;
originally announced July 2022.
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Strain-induced enhancement of $T_c$ in infinite-layer Pr$_{0.8}$Sr$_{0.2}$NiO$_2$ films
Authors:
Xiaolin Ren,
Jiarui Li,
Wei-Chih Chen,
Qiang Gao,
Joshua J. Sanchez,
Jordyn Hales,
Hailan Luo,
Fanny Rodolakis,
Jessica L. McChesney,
Tao Xiang,
Jiang** Hu,
Fu-Chun Zhang,
Riccardo Comin,
Yao Wang,
X. J. Zhou,
Zhihai Zhu
Abstract:
The mechanism of unconventional superconductivity in correlated materials remains a great challenge in condensed matter physics. The recent discovery of superconductivity in infinite-layer nickelates, as analog to high-Tc cuprates, has opened a new route to tackle this challenge. By growing 8 nm Pr0.8Sr0.2NiO2 films on the (LaAlO3)0.3(Sr2AlTaO6)0.7 substrate, we successfully raise the transition t…
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The mechanism of unconventional superconductivity in correlated materials remains a great challenge in condensed matter physics. The recent discovery of superconductivity in infinite-layer nickelates, as analog to high-Tc cuprates, has opened a new route to tackle this challenge. By growing 8 nm Pr0.8Sr0.2NiO2 films on the (LaAlO3)0.3(Sr2AlTaO6)0.7 substrate, we successfully raise the transition temperature Tc from 9 K in the widely studied SrTiO3-substrated nickelates into 15 K. By combining x-ray absorption spectroscopy with the first-principles and many-body simulations, we find a positive correlation between Tc and the pre-edge peak intensity, which can be attributed to the hybridization between Ni and O orbitals induced by the strain. Our result suggests that structural engineering can further enhance unconventional superconductivity, and the charge-transfer property plays a crucial role in the pairing strength.
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Submitted 20 March, 2022; v1 submitted 13 September, 2021;
originally announced September 2021.
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Electronic structure of superconducting nickelates probed by resonant photoemission spectroscopy
Authors:
Zhuoyu Chen,
Motoki Osada,
Danfeng Li,
Emily M. Been,
Su-Di Chen,
Makoto Hashimoto,
Donghui Lu,
Sung-Kwan Mo,
Kyuho Lee,
Bai Yang Wang,
Fanny Rodolakis,
Jessica L. McChesney,
Chun**g Jia,
Brian Moritz,
Thomas P. Devereaux,
Harold Y. Hwang,
Zhi-Xun Shen
Abstract:
The discovery of infinite-layer nickelate superconductors has spurred enormous interest. While the Ni$^{1+}$ cations possess nominally the same 3$d^9$ configuration as Cu$^{2+}$ in cuprates, the electronic structure variances remain elusive. Here, we present a soft x-ray photoemission spectroscopy study on parent and doped infinite-layer Pr-nickelate thin films with a doped perovskite reference. B…
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The discovery of infinite-layer nickelate superconductors has spurred enormous interest. While the Ni$^{1+}$ cations possess nominally the same 3$d^9$ configuration as Cu$^{2+}$ in cuprates, the electronic structure variances remain elusive. Here, we present a soft x-ray photoemission spectroscopy study on parent and doped infinite-layer Pr-nickelate thin films with a doped perovskite reference. By identifying the Ni character with resonant photoemission and comparison to density functional theory + U (on-site Coulomb repulsion energy) calculations, we estimate U ~5 eV, smaller than the charge transfer energy $Δ$ ~8 eV, confirming the Mott-Hubbard electronic structure in contrast to charge-transfer cuprates. Near the Fermi level ($E_F$), we observe a signature of occupied rare-earth states in the parent compound, which is consistent with a self-do** picture. Our results demonstrate a correlation between the superconducting transition temperature and the oxygen 2$p$ hybridization near $E_F$ when comparing hole-doped nickelates and cuprates.
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Submitted 16 February, 2022; v1 submitted 7 June, 2021;
originally announced June 2021.
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Search for $Q \sim 0$ order near a forbidden Bragg position in Bi$_{2.1}$Sr$_{1.9}$CaCu$_2$O$_{8+x}$ with resonant soft x-ray scattering
Authors:
Xuefei Guo,
Sangjun Lee,
Thomas A. Johnson,
** Chen,
Paul Vandeventer,
Ali A. Husain,
Fanny Rodolakis,
Jessica L. McChesney,
Padraic Shafer,
Hai Huang,
Jun-Sik Lee,
John Schneeloch,
Ruidan Zhong,
G. D. Gu,
Matteo Mitrano,
Peter Abbamonte
Abstract:
Identifying what broken symmetries are present in the cuprates has become a major area of research. Many authors have reported evidence for so-called "$Q \sim 0$" order that involves broken inversion, mirror, chiral, or time-reversal symmetry that is uniform in space. Not all these observations are well understood and new experimental probes are needed. Here we use resonant soft x-ray scattering (…
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Identifying what broken symmetries are present in the cuprates has become a major area of research. Many authors have reported evidence for so-called "$Q \sim 0$" order that involves broken inversion, mirror, chiral, or time-reversal symmetry that is uniform in space. Not all these observations are well understood and new experimental probes are needed. Here we use resonant soft x-ray scattering (RSXS) to search for $Q \sim 0$ order in Bi$_{2.1}$Sr$_{1.9}$CaCu$_2$O$_{8+x}$ (Bi-2212) by measuring the region of a forbidden Bragg peak, $(0,0,3)$, which is normally extinguished by symmetry but may become allowed on resonance if valence band order is present. Using circularly polarized light, we found that this reflection becomes allowed on the Cu $L_3$ resonance for temperatures $T_c < T < T^\ast$, though remains absent in linear polarization and at other temperatures. This observation suggests the existence of spatially uniform valence band order near the pseudogap temperature. In addition, we observed periodic oscillations in the specular reflectivity from the sample surface that resemble thin film interference fringes, though no known film is present. These fringes are highly resonant, appear in all polarizations, and exhibit a period that depends on the location where the beam strikes the sample surface. We speculate that these fringes arise from interaction between some intrinsic valence band instability and extrinsic structural surface morphologies of the material. Our study supports the existence of some kind of $Q \sim 0$ broken symmetry state in Bi-2212 at intermediate temperatures, and calls for further study using a microfocused beam that could disentangle microscopic effects from macroscopic heterogeneities.
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Submitted 23 April, 2021;
originally announced April 2021.
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Band Engineering of Dirac Semimetals using Charge Density Waves
Authors:
Shiming Lei,
Samuel M. L. Teicher,
Andreas Topp,
Kehan Cai,
**g**g Lin,
Fanny Rodolakis,
Jessica L. McChesney,
Maxim Krivenkov,
Dmitry Marchenko,
Andrei Varykhalov,
Christian R. Ast,
Roberto Car,
Jennifer Cano,
Maia G. Vergniory,
N. Phuan Ong,
Leslie M. Schoop
Abstract:
New developments in the field of topological matter are often driven by materials discovery, including novel topological insulators, Dirac semimetals and Weyl semimetals. In the last few years, large efforts have been performed to classify all known inorganic materials with respect to their topology. Unfortunately, a large number of topological materials suffer from non-ideal band structures. For…
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New developments in the field of topological matter are often driven by materials discovery, including novel topological insulators, Dirac semimetals and Weyl semimetals. In the last few years, large efforts have been performed to classify all known inorganic materials with respect to their topology. Unfortunately, a large number of topological materials suffer from non-ideal band structures. For example, topological bands are frequently convoluted with trivial ones, and band structure features of interest can appear far below the Fermi level. This leaves just a handful of materials that are intensively studied. Finding strategies to design new topological materials is a solution. Here we introduce a new mechanism that is based on charge density waves and non-symmorphic symmetry to design an idealized Dirac semimetal. We then show experimentally that the antiferromagnetic compound GdSb$_{0.46}$Te$_{1.48}$ is a nearly ideal Dirac semimetal based on the proposed mechanism, meaning that most interfering bands at the Fermi level are suppressed. Its highly unusual transport behavior points to a thus far unknown regime, in which Dirac carriers with Fermi energy very close to the node seem to gradually localize in the presence of lattice and magnetic disorder.
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Submitted 21 June, 2021; v1 submitted 1 September, 2020;
originally announced September 2020.
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High electrical conductivity in the epitaxial polar metals LaAuGe and LaPtSb
Authors:
Dongxue Du,
Amber Lim,
Chenyu Zhang,
Patrick J. Strohbeen,
Estiaque H. Shourov,
Fanny Rodolakis,
Jessica L. McChesney,
Paul Voyles,
Daniel C. Fredrickson,
Jason K. Kawasaki
Abstract:
Polar metals are an intriguing class of materials that simultaneously host free carriers and polar structural distortions. Despite the name "polar metal," however, most well-studied polar metals are poor electrical conductors. Here, we demonstrate the molecular beam epitaxial (MBE) growth of LaPtSb and LaAuGe, two polar metal compounds whose electrical resistivity is an order of magnitude lower th…
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Polar metals are an intriguing class of materials that simultaneously host free carriers and polar structural distortions. Despite the name "polar metal," however, most well-studied polar metals are poor electrical conductors. Here, we demonstrate the molecular beam epitaxial (MBE) growth of LaPtSb and LaAuGe, two polar metal compounds whose electrical resistivity is an order of magnitude lower than the well studied oxide polar metals. These materials belong to a broad family of $ABC$ intermetallics adopting the stuffed wurtzite structure, also known as hexagonal Heusler compounds. Scanning transmission electron microscopy (STEM) reveals a polar structure with unidirectionally buckled $BC$ (PtSb, AuGe) planes. Magnetotransport measurements demonstrate good metallic behavior with low residual resistivity ($ρ_{LaAuGe}=59.05$ $μΩ\cdot$cm and $ρ_{LaAPtSb}=27.81$ $μΩ\cdot$cm at 2K) and high carrier density ($n_h\sim 10^{21}$ cm$^{-3}$). Photoemission spectroscopy measurements confirm the band metallicity and are in quantitative agreement with density functional theory (DFT) calculations. Through DFT-Chemical Pressure and Crystal Orbital Hamilton Population analyses, the atomic packing factor is found to support the polar buckling of the structure, though the degree of direct interlayer $B-C$ bonding is limited by repulsion at the $A-C$ contacts. When combined with insulating hexagonal Heuslers, these materials provide a new platform for fully epitaxial, multiferroic heterostructures.
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Submitted 16 October, 2019;
originally announced October 2019.
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Resonant soft x-ray scattering from stripe-ordered La$_{2-x}$Ba$_x$CuO$_4$ detected by a transition edge sensor array detector
Authors:
Y. I. Joe,
Y. Fang,
S. Lee,
S. X. L. Sun,
G. A. de la Peña,
W. B. Doriese,
K. M. Morgan,
J. W. Fowler,
L. R. Vale,
F. Rodolakis,
J. L. McChesney,
J. N. Ullom,
D. S. Swetz,
P. Abbamonte
Abstract:
Resonant soft x-ray scattering (RSXS) is a leading probe of valence band order in materials best known for detecting charge density wave order in the copper-oxide superconductors. One of the biggest limitations on the RSXS technique is the presence of a severe fluorescence background which, like the RSXS cross section itself, is enhanced under resonant conditions. This background prevents the stud…
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Resonant soft x-ray scattering (RSXS) is a leading probe of valence band order in materials best known for detecting charge density wave order in the copper-oxide superconductors. One of the biggest limitations on the RSXS technique is the presence of a severe fluorescence background which, like the RSXS cross section itself, is enhanced under resonant conditions. This background prevents the study of weak signals such as diffuse scattering from glassy or fluctuating order that is spread widely over momentum space. Recent advances in superconducting transition edge sensor (TES) detectors have led to major improvements in energy resolution and detection efficiency in the soft x-ray range. Here, we perform a RSXS study of stripe-ordered La$_{2-x}$Ba$_x$CuO$_4$ at the Cu $L_{3/2}$ edge (932.2 eV) using a TES detector with 1.5 eV resolution, to evaluate its utility for mitigating the fluorescence background problem. We find that, for suitable degree of detuning from the resonance, the TES rejects the fluorescence background, leading to a 5 to 10 times improvement in the statistical quality of the data compared to an equivalent, energy-integrated measurement. We conclude that a TES presents a promising approach to reducing background in RSXS studies and may lead to new discoveries in materials exhibiting valence band order that is fluctuating or glassy.
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Submitted 16 February, 2020; v1 submitted 17 July, 2019;
originally announced July 2019.
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Large Fermi Surface Expansion through Anisotropic c-f Mixing in the Semimetallic Kondo Lattice System CeBi
Authors:
Peng Li,
Zhongzheng Wu,
Fan Wu,
Chunyu Guo,
Yi Liu,
Haijiang Liu,
Zhe Sun,
Ming Shi,
Fanny Rodolakis,
Jessica L McChesney,
Chao Cao,
Frank Steglich,
Huiqiu Yuan,
Yang Liu
Abstract:
Using angle-resolved photoemission spectroscopy (ARPES) and resonant ARPES, we report evidence of strong anisotropic conduction-f electron mixing (c-f mixing) in CeBi by observing a largely expanded Ce-5d pocket at low temperature, with no change in the Bi-6p bands. The Fermi surface (FS) expansion is accompanied by a pronounced spectral weight transfer from the local 4f 0 peak of Ce (correspondin…
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Using angle-resolved photoemission spectroscopy (ARPES) and resonant ARPES, we report evidence of strong anisotropic conduction-f electron mixing (c-f mixing) in CeBi by observing a largely expanded Ce-5d pocket at low temperature, with no change in the Bi-6p bands. The Fermi surface (FS) expansion is accompanied by a pronounced spectral weight transfer from the local 4f 0 peak of Ce (corresponding to Ce3+) to the itinerant conduction bands near the Fermi level. Careful analysis suggests that the observed large FS change (with a volume expansion of the electron pocket up to 40%) can most naturally be explained by a small valence change (~ 1%) of Ce, which coexists with a very weak Kondo screening. Our work therefore provides evidence for a FS change driven by real charge fluctuations deep in the Kondo limit, which is made possible by the low carrier density.
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Submitted 18 June, 2019;
originally announced June 2019.
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High mobility in a van der Waals layered antiferromagnetic metal
Authors:
Shiming Lei,
**g**g Lin,
Yanyu Jia,
Mason Gray,
Andreas Topp,
Gelareh Farahi,
Sebastian Klemenz,
Tong Gao,
Fanny Rodolakis,
Jessica L. McChesney,
Christian R. Ast,
Ali Yazdani,
Kenneth S. Burch,
Sanfeng Wu,
N. Phuan Ong,
Leslie M. Schoop
Abstract:
Magnetic van der Waals (vdW) materials have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far magnetic vdW materials are mainly insulating or semiconducting, and none of them possesses a high electronic mobility - a property that is rare in layered vdW materials in general. The realization of a magnetic high-mobility vdW material would op…
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Magnetic van der Waals (vdW) materials have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far magnetic vdW materials are mainly insulating or semiconducting, and none of them possesses a high electronic mobility - a property that is rare in layered vdW materials in general. The realization of a magnetic high-mobility vdW material would open the possibility for novel magnetic twistronic or spintronic devices. Here we report very high carrier mobility in the layered vdW antiferromagnet GdTe3. The electron mobility is beyond 60,000 cm2 V-1 s-1, which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe3 is comparable to that of black phosphorus, and is only surpassed by graphite. By mechanical exfoliation, we further demonstrate that GdTe3 can be exfoliated to ultrathin flakes of three monolayers, and that the magnetic order and relatively high mobility is retained in approximately 20-nm-thin flakes.
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Submitted 14 August, 2019; v1 submitted 7 March, 2019;
originally announced March 2019.
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Electronically enhanced layer buckling and Au-Au dimerization in epitaxial LaAuSb films
Authors:
Patrick J. Strohbeen,
Dongxue Du,
Chenyu Zhang,
Estiaque H. Shourov,
Fanny Rodolakis,
Jessica L. McChesney,
Paul M. Voyles,
Jason K. Kawasaki
Abstract:
We report the molecular beam epitaxial growth, structure, and electronic measurements of single-crystalline LaAuSb films on Al$_2$O$_3$ (0001) substrates. LaAuSb belongs to a broad family of hexagonal $ABC$ intermetallics in which the magnitude and sign of layer buckling have strong effects on properties, e.g., predicted hyperferroelecticity, polar metallicity, and Weyl and Dirac states. Scanning…
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We report the molecular beam epitaxial growth, structure, and electronic measurements of single-crystalline LaAuSb films on Al$_2$O$_3$ (0001) substrates. LaAuSb belongs to a broad family of hexagonal $ABC$ intermetallics in which the magnitude and sign of layer buckling have strong effects on properties, e.g., predicted hyperferroelecticity, polar metallicity, and Weyl and Dirac states. Scanning transmission electron microscopy reveals highly buckled planes of Au-Sb atoms, with strong interlayer Au-Au interactions and a doubling of the unit cell. This buckling is four times larger than the buckling observed in other $ABC$s with similar composition, e.g. LaAuGe and LaPtSb. Photoemission spectroscopy measurements and comparison with theory suggest an electronic driving force for the Au-Au dimerization, since LaAuSb, with a 19-electron count, has one more valence electron per formula unit than most stable $ABC$s. Our results suggest that the electron count, in addition to conventional parameters such as epitaxial strain and chemical pressure, provides a powerful means for tuning the layer buckling in ferroic $ABC$s.
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Submitted 25 January, 2019;
originally announced January 2019.
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Competition between static and dynamic magnetism in the Kitaev spin liquid material Cu2IrO3
Authors:
Eric M. Kenney,
Carlo U. Segre,
William Lafargue-Dit-Hauret,
Oleg I. Lebedev,
Mykola Abramchuk,
Adam Berlie,
Stephen P. Cottrell,
Gediminas Simutis,
Faranak Bahrami,
Natalia E. Mordvinova,
Jessica. L. McChesney,
Gilberto Fabbris,
Daniel Haskel,
Xavier Rocquefelte,
Michael J. Graf,
Fazel Tafti
Abstract:
Anyonic excitations emerging from a Kitaev spin liquid can form a basis for quantum computers. Searching for such excitations motivated intense research on the honeycomb iridate materials. However, access to a spin liquid ground state has been hindered by magnetic ordering. Cu2IrO3 is a new honeycomb iridate without thermodynamic signatures of a long-range order. Here, we use muon spin relaxation…
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Anyonic excitations emerging from a Kitaev spin liquid can form a basis for quantum computers. Searching for such excitations motivated intense research on the honeycomb iridate materials. However, access to a spin liquid ground state has been hindered by magnetic ordering. Cu2IrO3 is a new honeycomb iridate without thermodynamic signatures of a long-range order. Here, we use muon spin relaxation to uncover the magnetic ground state of Cu2IrO3. We find a two-component depolarization with slow and fast relaxation rates corresponding to distinct regions with dynamic and static magnetism, respectively. X-ray absorption spectroscopy and first principles calculations identify a mixed copper valence as the origin of this behavior. Our results suggest that a minority of Cu2+ ions nucleate regions of static magnetism whereas the majority of Cu+/Ir4+ on the honeycomb lattice give rise to a Kitaev spin liquid.
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Submitted 1 November, 2018;
originally announced November 2018.
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Loss of nodal quasiparticle integrity in underdoped YBa2Cu3O6+x
Authors:
D. Fournier,
G. Levy,
Y. Pennec,
J. L. McChesney,
A. Bostwick,
E. Rotenberg,
R. Liang,
W. N. Hardy,
D. A. Bonn,
I. S. Elfimov,
A. Damascelli
Abstract:
Arguably the most intriguing aspect of the physics of cuprates is the close proximity between the record high-Tc superconductivity (HTSC) and the antiferromagnetic charge-transfer insulating state driven by Mott-like electron correlations. These are responsible for the intimate connection between high and low-energy scale physics, and their key role in the mechanism of HTSC was conjectured very ea…
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Arguably the most intriguing aspect of the physics of cuprates is the close proximity between the record high-Tc superconductivity (HTSC) and the antiferromagnetic charge-transfer insulating state driven by Mott-like electron correlations. These are responsible for the intimate connection between high and low-energy scale physics, and their key role in the mechanism of HTSC was conjectured very early on. More recently, the detection of quantum oscillations in high-magnetic field experiments on YBa2Cu3O6+x (YBCO) has suggested the existence of a Fermi surface of well-defined quasiparticles in underdoped cuprates, lending support to the alternative proposal that HTSC might emerge from a Fermi liquid across the whole cuprate phase diagram. Discriminating between these orthogonal scenarios hinges on the quantitative determination of the elusive quasiparticle weight Z, over a wide range of hole-do** p. By means of angle-resolved photoemission spectroscopy (ARPES) on in situ doped YBCO, and following the evolution of bilayer band-splitting, we show that the overdoped metal electronic structure (0.25<p<0.37) is in remarkable agreement with density functional theory and the Z=2p/(p+1) mean-field prediction. Below p~0.10-0.15, we observe the vanishing of the nodal quasiparticle weight Z_N; this marks a clear departure from Fermi liquid behaviour and -- consistent with dynamical mean-field theory -- is even a more rapid crossover to the Mott physics than expected for the doped resonating valence bond (RVB) spin liquid.
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Submitted 22 July, 2010;
originally announced July 2010.
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Strictly One-Dimensional Electron System in Au Chains on Ge(001) Revealed By Photoelectron K-Space Map**
Authors:
S. Meyer,
J. Schaefer,
C. Blumenstein,
P. Hoepfner,
A. Bostwick,
J. L. McChesney,
E. Rotenberg,
R. Claessen
Abstract:
Atomic nanowires formed by Au on Ge(001) are scrutinized for the band topology of the conduction electron system by k-resolved photoemission. Two metallic electron pockets are observed. Their Fermi surface sheets form straight lines without undulations perpendicular to the chains within experimental uncertainty. The electrons hence emerge as strictly confined to one dimension. Moreover, the system…
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Atomic nanowires formed by Au on Ge(001) are scrutinized for the band topology of the conduction electron system by k-resolved photoemission. Two metallic electron pockets are observed. Their Fermi surface sheets form straight lines without undulations perpendicular to the chains within experimental uncertainty. The electrons hence emerge as strictly confined to one dimension. Moreover, the system is stable against a Peierls distortion down to 10 K, lending itself for studies of the spectral function. Indications for unusually low spectral weight at the chemical potential are discussed.
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Submitted 16 December, 2010; v1 submitted 25 April, 2010;
originally announced April 2010.
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Quasiparticle Transformation During a Metal-Insulator Transition in Graphene
Authors:
Aaron Bostwick,
Jessica L. McChesney,
Konstantin Emtsev,
Thomas Seyller,
Karsten Horn,
Stephan D. Kevan,
Eli Rotenberg
Abstract:
Here we show, with simultaneous transport and photoemission measurements, that the graphene terminated SiC(0001) surface undergoes a metal-insulator transition (MIT) upon dosingwith small amounts of atomic hydrogen. We find the room temperature resistance increases by about 4 orders of magnitude, a transition accompanied by anomalies in the momentum-resolved spectral function including a non-Fer…
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Here we show, with simultaneous transport and photoemission measurements, that the graphene terminated SiC(0001) surface undergoes a metal-insulator transition (MIT) upon dosingwith small amounts of atomic hydrogen. We find the room temperature resistance increases by about 4 orders of magnitude, a transition accompanied by anomalies in the momentum-resolved spectral function including a non-Fermi Liquid behaviour and a breakdown of the quasiparticle picture. These effects are discussed in terms of a possible transition to a strongly (Anderson) localized ground state.
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Submitted 15 April, 2009;
originally announced April 2009.
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Self-consistent analysis of electron-phonon coupling parameters of graphene
Authors:
Jessica L. McChesney,
Aaron Bostwick,
Taisuke Ohta,
Konstantin Emtsev,
Thomas Seyller,
Karsten Horn,
Eli Rotenberg
Abstract:
We present a self-consistent analysis of the photoemission spectral function A(k, w) of graphene monolayers grown epitaxially on SiC(0001). New information derived from spectral intensity anomalies (in addition to linewidths and peak positions) confirms that sizeable kinks in the electronic dispersion at the Dirac energy ED and near the Fermi level EF arise from many-body interactions, not singl…
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We present a self-consistent analysis of the photoemission spectral function A(k, w) of graphene monolayers grown epitaxially on SiC(0001). New information derived from spectral intensity anomalies (in addition to linewidths and peak positions) confirms that sizeable kinks in the electronic dispersion at the Dirac energy ED and near the Fermi level EF arise from many-body interactions, not single-particle effects such as substrate bonding or extra bands. The relative electron-phonon scattering rate from phonons at different energy scales evolves with do**. The electron-phonon coupling strength is extracted and found to be much larger (~3.5-5 times) than predicted.
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Submitted 23 September, 2008;
originally announced September 2008.
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Atmospheric pressure graphitization of SiC(0001)- A route towards wafer-size graphene layers
Authors:
Konstantin V. Emtsev,
Aaron Bostwick,
Karsten Horn,
Johannes Jobst,
Gary L. Kellogg,
Lothar Ley,
Jessica L. McChesney,
Taisuke Ohta,
Sergey A. Reshanov,
Eli Rotenberg,
Andreas K. Schmid,
Daniel Waldmann,
Heiko B. Weber,
Thomas Seyller
Abstract:
We have investigated epitaxial graphene films grown on SiC(0001) by annealing in an atmosphere of Ar instead of vacuum. Using AFM and LEEM we observe a significantly improved surface morphology and graphene domain size. Hall measurements on monolayer graphene films show a carrier mobility of around 1000 cm^2/Vs at room temperature and 2000 cm^2/Vs at 27K. The growth process introduced here estab…
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We have investigated epitaxial graphene films grown on SiC(0001) by annealing in an atmosphere of Ar instead of vacuum. Using AFM and LEEM we observe a significantly improved surface morphology and graphene domain size. Hall measurements on monolayer graphene films show a carrier mobility of around 1000 cm^2/Vs at room temperature and 2000 cm^2/Vs at 27K. The growth process introduced here establishes the synthesis of graphene films on a technologically viable basis.
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Submitted 8 August, 2008;
originally announced August 2008.
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The Fermi surface of Ba(1-x)K(x)Fe2As2 and its evolution with do**
Authors:
C. Liu,
G. D. Samolyuk,
Y. Lee,
N. Ni,
T. Kondo,
A. F. Santander-Syro,
S. L. Bud'ko,
J. L. McChesney,
E. Rotenberg,
T. Valla,
A. V. Fedorov,
P. C. Canfield,
B. N. Harmon,
A. Kaminski
Abstract:
We use angle-resolved photoemission spectroscopy (ARPES) to investigate the electronic properties of the newly discovered iron-arsenic superconductor, Ba(1-x)K(x)Fe2As2 and non-supercondcuting BaFe2As2. Our study indicates that the Fermi surface of the undoped, parent compound BaFe$_2$As$_2$ consists of hole pocket(s) at Gamma (0,0) and larger electron pocket(s) at X (1,0), in general agreement…
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We use angle-resolved photoemission spectroscopy (ARPES) to investigate the electronic properties of the newly discovered iron-arsenic superconductor, Ba(1-x)K(x)Fe2As2 and non-supercondcuting BaFe2As2. Our study indicates that the Fermi surface of the undoped, parent compound BaFe$_2$As$_2$ consists of hole pocket(s) at Gamma (0,0) and larger electron pocket(s) at X (1,0), in general agreement with full-potential linearized plane wave (FLAPW) calculations. Upon do** with potassium, the hole pocket expands and the electron pocket becomes smaller with its bottom approaching the chemical potential. Such an evolution of the Fermi surface is consistent with hole do** within a rigid band shift model. Our results also indicate that FLAPW calculation is a reasonable approach for modeling the electronic properties of both undoped and K-doped iron arsenites.
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Submitted 20 June, 2008;
originally announced June 2008.
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Fermi surface and strong coupling superconductivity in single crystal NdFeAsO_{1-x}F_x
Authors:
C. Liu,
T. Kondo,
M. E. Tillman,
R. Gordon,
G. D. Samolyuk,
Y. Lee,
C. Martin,
J. L. McChesney,
S. Bud'ko,
M. A. Tanatar,
E. Rotenberg,
P. C. Canfield,
R. Prozorov,
B. N. Harmon,
A. Kaminski
Abstract:
We use angle-resolved photoemission spectroscopy (ARPES) to investigate the electronic properties of the newly discovered oxypnictide superconductor, NdFeAsO_{1-x}F_x. We find a well-defined Fermi surface that consists of a large hole pocket at the Brillouin zone center and a smaller electron pocket in each corner of the Brillouin zone. The overall location and shape of the Fermi surface agrees…
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We use angle-resolved photoemission spectroscopy (ARPES) to investigate the electronic properties of the newly discovered oxypnictide superconductor, NdFeAsO_{1-x}F_x. We find a well-defined Fermi surface that consists of a large hole pocket at the Brillouin zone center and a smaller electron pocket in each corner of the Brillouin zone. The overall location and shape of the Fermi surface agrees reasonably well with calculations. The band dispersion is quite complicated with many flat bands located just below the chemical potential. We observe a superconducting gap of 20 meV, which indicates that this system is in the strong coupling regime. The emergence of a coherent peak below the critical temperature Tc and diminished spectral weight at the chemical potential above Tc closely resembles the spectral characteristics of the cuprates.
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Submitted 16 June, 2008; v1 submitted 12 June, 2008;
originally announced June 2008.
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Van Hove Singularity and Apparent Anisotropy in the Electron-Phonon Interaction in Graphene
Authors:
Cheol-Hwan Park,
Feliciano Giustino,
Jessica L. McChesney,
Aaron Bostwick,
Taisuke Ohta,
Eli Rotenberg,
Marvin L. Cohen,
Steven G. Louie
Abstract:
We show that the electron-phonon coupling strength obtained from the slopes of the electronic energy vs. wavevector dispersion relations, as often done in analyzing angle-resolved photoemission data, can differ substantially from the actual electron-phonon coupling strength due to the curvature of the bare electronic bands. This effect becomes particularly important when the Fermi level is close…
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We show that the electron-phonon coupling strength obtained from the slopes of the electronic energy vs. wavevector dispersion relations, as often done in analyzing angle-resolved photoemission data, can differ substantially from the actual electron-phonon coupling strength due to the curvature of the bare electronic bands. This effect becomes particularly important when the Fermi level is close to a van Hove singularity. By performing {\it ab initio} calculations on doped graphene we demonstrate that, while the apparent strength obtained from the slopes of experimental photoemission data is highly anisotropic, the angular dependence of the actual electron-phonon coupling strength in this material is negligible.
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Submitted 27 March, 2008;
originally announced March 2008.
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Controlling the self-do** of YBa2C3O7-d polar surfaces: From Fermi surface to nodal Fermi arcs by ARPES
Authors:
M. A. Hossain,
J. D. F. Mottershead,
A. Bostwick,
J. L. McChesney,
E. Rotenberg,
R. Liang,
W. N. Hardy,
G. A. Sawatzky,
I. S. Elfimov,
D. A. Bonn,
A. Damascelli
Abstract:
The discovery of quantum oscillations in the normal-state electrical resistivity of YBa2Cu3O6.5 provides the first evidence for the existence of Fermi surface (FS) pockets in an underdoped cuprate. However, the pockets' electron vs. hole character, and the very interpretation in terms of closed FS contours, are the subject of considerable debate. Angle-resolved photoemission spectroscopy (ARPES)…
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The discovery of quantum oscillations in the normal-state electrical resistivity of YBa2Cu3O6.5 provides the first evidence for the existence of Fermi surface (FS) pockets in an underdoped cuprate. However, the pockets' electron vs. hole character, and the very interpretation in terms of closed FS contours, are the subject of considerable debate. Angle-resolved photoemission spectroscopy (ARPES), with its ability to probe electronic dispersion as well as the FS, is ideally suited to address this issue. Unfortunately, the ARPES study of YBa2C3O7-d (YBCO) has been hampered by the technique's surface sensitivity. Here we show that this stems from the polarity and corresponding self-do** of the YBCO surface. By in-situ deposition of potassium atoms on the cleaved surface, we are able to continuously tune the do** of a single sample from the heavily overdoped to the underdoped regime. This reveals the progressive collapse of the normal-metal-like FS into four disconnected nodal FS arcs, or perhaps into hole but not electron pockets, in underdoped YBCO6.5.
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Submitted 22 January, 2008;
originally announced January 2008.
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Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC
Authors:
Victor W. Brar,
Yuanbo Zhang,
Yossi Yayon,
Aaron Bostwick,
Taisuke Ohta,
Jessica L. McChesney,
Karsten Horn,
Eli Rotenberg,
Michael F. Crommie
Abstract:
We present a scanning tunneling spectroscopy (STS) study of the local electronic structure of single and bilayer graphene grown epitaxially on a SiC(0001) surface. Low voltage topographic images reveal fine, atomic-scale carbon networks, whereas higher bias images are dominated by emergent spatially inhomogeneous large-scale structure similar to a carbon-rich reconstruction of SiC(0001). STS spe…
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We present a scanning tunneling spectroscopy (STS) study of the local electronic structure of single and bilayer graphene grown epitaxially on a SiC(0001) surface. Low voltage topographic images reveal fine, atomic-scale carbon networks, whereas higher bias images are dominated by emergent spatially inhomogeneous large-scale structure similar to a carbon-rich reconstruction of SiC(0001). STS spectroscopy shows a ~100meV gap-like feature around zero bias for both monolayer and bilayer graphene/SiC, as well as significant spatial inhomogeneity in electronic structure above the gap edge. Nanoscale structure at the SiC/graphene interface is seen to correlate with observed electronic spatial inhomogeneity. These results are important for potential devices involving electronic transport or tunneling in graphene/SiC.
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Submitted 12 July, 2007; v1 submitted 26 June, 2007;
originally announced June 2007.
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Symmetry Breaking in Few Layer Graphene Films
Authors:
Aaron Bostwick,
Taisuke Ohta,
Jessica L. McChesney,
Konstantin V. Emtsev,
Thomas Seyller,
Karsten Horn,
Eli Rotenberg
Abstract:
Recently, it was demonstrated that the quasiparticle dynamics, the layer-dependent charge and potential, and the c-axis screening coefficient could be extracted from measurements of the spectral function of few layer graphene films grown epitaxially on SiC using angle-resolved photoemission spectroscopy (ARPES). In this article we review these findings, and present detailed methodology for extra…
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Recently, it was demonstrated that the quasiparticle dynamics, the layer-dependent charge and potential, and the c-axis screening coefficient could be extracted from measurements of the spectral function of few layer graphene films grown epitaxially on SiC using angle-resolved photoemission spectroscopy (ARPES). In this article we review these findings, and present detailed methodology for extracting such parameters from ARPES. We also present detailed arguments against the possibility of an energy gap at the Dirac crossing ED.
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Submitted 25 May, 2007;
originally announced May 2007.
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Massive enhancement of electron-phonon coupling in doped graphene by an electronic singularity
Authors:
Jessica L. McChesney,
Aaron Bostwick,
Taisuke Ohta,
Konstantin V. Emtsev,
Thomas Seyller,
Karsten Horn,
Eli Rotenberg
Abstract:
The nature of the coupling leading to superconductivity in layered materials such as high-Tc superconductors and graphite intercalation compounds (GICs) is still unresolved. In both systems, interactions of electrons with either phonons or other electrons or both have been proposed to explain superconductivity. In the high-Tc cuprates, the presence of a Van Hove singularity (VHS) in the density…
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The nature of the coupling leading to superconductivity in layered materials such as high-Tc superconductors and graphite intercalation compounds (GICs) is still unresolved. In both systems, interactions of electrons with either phonons or other electrons or both have been proposed to explain superconductivity. In the high-Tc cuprates, the presence of a Van Hove singularity (VHS) in the density of states near the Fermi level was long ago proposed to enhance the many-body couplings and therefore may play a role in superconductivity. Such a singularity can cause an anisotropic variation in the coupling strength, which may partially explain the so-called nodal-antinodal dichotomy in the cuprates. Here we show that the topology of the graphene band structure at do**s comparable to the GICs is quite similar to that of the cuprates and that the quasiparticle dynamics in graphene have a similar dichotomy. Namely, the electron-phonon coupling is highly anisotropic, diverging near a saddle point in the graphene electronic band structure. These results support the important role of the VHS in layered materials and the possible optimization of Tc by tuning the VHS with respect to the Fermi level.
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Submitted 22 May, 2007;
originally announced May 2007.
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Interlayer interaction and electronic screening in multilayer graphene
Authors:
Taisuke Ohta,
Aaron Bostwick,
J. L. McChesney,
Thomas Seyller,
Karsten Horn,
Eli Rotenberg
Abstract:
The unusual transport properties of graphene are the direct consequence of a peculiar bandstructure near the Dirac point. We determine the shape of the pi bands and their characteristic splitting, and the transition from a pure 2D to quasi-2D behavior for 1 to 4 layers of graphene by angle-resolved photoemission. By exploiting the sensitivity of the pi bands to the electronic potential, we deriv…
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The unusual transport properties of graphene are the direct consequence of a peculiar bandstructure near the Dirac point. We determine the shape of the pi bands and their characteristic splitting, and the transition from a pure 2D to quasi-2D behavior for 1 to 4 layers of graphene by angle-resolved photoemission. By exploiting the sensitivity of the pi bands to the electronic potential, we derive the layer-dependent carrier concentration, screening length and strength of interlayer interaction by comparison with tight binding calculations, yielding a comprehensive description of multilayer graphene's electronic structure.
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Submitted 6 December, 2006;
originally announced December 2006.
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Synthesis and characterization of atomically-thin graphite films on a silicon carbide substrate
Authors:
E. Rollings,
G. -H. Gweon,
S. Y. Zhou,
B. S. Mun,
J. L. McChesney,
B. S. Hussain,
A. V. Fedorov,
P. N. First,
W. A. de Heer,
A. Lanzara
Abstract:
This paper reports the synthesis and detailed characterization of graphite thin films produced by thermal decomposition of the (0001) face of a 6H-SiC wafer, demonstrating the successful growth of single crystalline films down to approximately one graphene layer. The growth and characterization were carried out in ultrahigh vacuum (UHV) conditions. The growth process and sample quality were moni…
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This paper reports the synthesis and detailed characterization of graphite thin films produced by thermal decomposition of the (0001) face of a 6H-SiC wafer, demonstrating the successful growth of single crystalline films down to approximately one graphene layer. The growth and characterization were carried out in ultrahigh vacuum (UHV) conditions. The growth process and sample quality were monitored by low-energy electron diffraction, and the thickness of the sample was determined by core level x-ray photoelectron spectroscopy. High-resolution angle-resolved photoemission spectroscopy shows constant energy map patterns, which are very sharp and fully momentum-resolved, but nonetheless not resolution limited. We discuss the implications of this observation in connection with scanning electron microscopy data, as well as with previous studies.
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Submitted 2 October, 2006; v1 submitted 11 December, 2005;
originally announced December 2005.
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Gd disilicide nanowires attached to Si(111) steps
Authors:
J. L. McChesney,
A. Kirakosian,
R. Bennewitza,
J. N. Crain,
J. -L. Lin,
F. J. Himpsel
Abstract:
Self-assembled electronic devices, such as quantum dots or switchable molecules, need self-assembled nanowires as connections. We explore the growth of conducting Gd disilicide nanowires at step arrays on Si(111). Atomically smooth wires with large aspect ratios are formed at low coverage and high growth rate (length >1 micron, width 10nm, height 0.6nm). They grow parallel to the steps in the [-…
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Self-assembled electronic devices, such as quantum dots or switchable molecules, need self-assembled nanowires as connections. We explore the growth of conducting Gd disilicide nanowires at step arrays on Si(111). Atomically smooth wires with large aspect ratios are formed at low coverage and high growth rate (length >1 micron, width 10nm, height 0.6nm). They grow parallel to the steps in the [-1 1 0 ] direction, which is consistent with a lattice match of 0.8% with the a-axis of the hexagonal silicide, together with a large mismatch in all other directions. This mechanism is similar to that observed previously on Si(100). In contrast to Si(100), the wires are always attached to step edges on Si(111) and can thus be grown selectively on regular step arrays.
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Submitted 29 July, 2002; v1 submitted 2 May, 2002;
originally announced May 2002.
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Atomic Scale Memory at a Silicon Surface
Authors:
R. Bennewitz,
J. N. Crain,
A. Kirakosian,
J. -L. Lin,
J. L. McChesney,
D. Y. Petrovykh,
F. J. Himpsel
Abstract:
The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites along self-assembled tracks with a pitch of 5 atom rows. The writing process involves removal of Si atoms with the tip of a scanning tunneling microscope. The memory can be reformatted by controlled depo…
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The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites along self-assembled tracks with a pitch of 5 atom rows. The writing process involves removal of Si atoms with the tip of a scanning tunneling microscope. The memory can be reformatted by controlled deposition of silicon. The constraints on speed and reliability are compared with data storage in magnetic hard disks and DNA.
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Submitted 20 June, 2002; v1 submitted 11 April, 2002;
originally announced April 2002.
