Evolution of dislocation loops in irradiated α-Uranium: An atomistically-informed cluster dynamics investigation
Authors:
Sanjoy Kumar Mazumder,
Tiankai Yao,
Anter El-Azab
Abstract:
An atomistically informed mean field cluster dynamics model has been presented to investigate the nucleation and growth of defect loops in irradiated α-U. TEM analysis of neutron irradiated α-U shows the evolution of SIA and vacancy loops on (010) and (100) crystallographic planes respectively, resulting in an anisotropic swelling of the face-centered orthorhombic crystal. The accumulation of such…
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An atomistically informed mean field cluster dynamics model has been presented to investigate the nucleation and growth of defect loops in irradiated α-U. TEM analysis of neutron irradiated α-U shows the evolution of SIA and vacancy loops on (010) and (100) crystallographic planes respectively, resulting in an anisotropic swelling of the face-centered orthorhombic crystal. The accumulation of such loops, on irradiation, has been closely estimated using the cluster dynamics model. Parameters of the model, namely, the binding energy of point defects, i.e., Ui and VU, to SIA and vacancy loops respectively and the diffusivity of point defects govern the energetics and kinetics of the defect clustering phenomenon. We have studied the crystallography of defect loops and computed the binding energy of point defects to such loops using an angular dependent EAM potential in classical MD simulations. Using bond-boost hyperdynamics in LAMMPS, the anisotropic diffusion of Ui and VU in α-U has been investigated. The mechanisms of point defect diffusion and the associated migration energies have also been reported and compared with previous DFT studies. Our CD model uses the computed parameters, within their error ranges, to predict the population of defect clusters with a dose-rate and temperature similar to the neutron irradiation experiments. The predictions show an accumulation of small sized vacancy loops along with a population of large and growing SIA loops which closely corresponds to the TEM observations.
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Submitted 13 July, 2023; v1 submitted 17 April, 2023;
originally announced April 2023.
Atomistically-informed modeling of point defect clustering and evolution in irradiated ThO2
Authors:
Sanjoy Kumar Mazumder,
Maniesha Kaur Salaken Singh,
Tomohisa Kumagai,
Anter El-Azab
Abstract:
A cluster dynamics (CD) model has been developed to investigate the nucleation and growth of point defect clusters, i.e., interstitial prismatic loops and nanoscale and sub-nanoscale voids, in ThO2 during irradiation by energetic particles. The model considers cluster off-stoichiometry due to the asymmetry of point defect generation on the O and Th sublattices under irradiation, as well as the poi…
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A cluster dynamics (CD) model has been developed to investigate the nucleation and growth of point defect clusters, i.e., interstitial prismatic loops and nanoscale and sub-nanoscale voids, in ThO2 during irradiation by energetic particles. The model considers cluster off-stoichiometry due to the asymmetry of point defect generation on the O and Th sublattices under irradiation, as well as the point defect diffusivities and the defect binding energies to clusters. The energies were established using detailed molecular dynamics simulations considering the statistical variability of cluster configuration. A high-order adaptive time-integration has been used to solve the model. The predicted loop density and their average size is in good agreement with reported experimental observations for proton irradiated ThO2 at 600oC. The model did not predict void evolution due to the sluggish kinetics of cation vacancies, explaining the absence of voids in proton irradiated ThO2 (and other oxides) at relatively low temperatures.
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Submitted 13 June, 2022;
originally announced June 2022.
