-
Determining spin-orbit coupling in graphene by quasiparticle interference imaging
Authors:
Lihuan Sun,
Louk Rademaker,
Diego Mauro,
Alessandro Scarfato,
Árpád Pásztor,
Ignacio Gutiérrez-Lezama,
Zhe Wang,
Jose Martinez-Castro,
Alberto F. Morpurgo,
Christoph Renner
Abstract:
Inducing and controlling spin-orbit coupling (SOC) in graphene is key to create topological states of matter, and for the realization of spintronic devices. Placing graphene onto a transition metal dichalcogenide is currently the most successful strategy to achieve this goal, but there is no consensus as to the nature and the magnitude of the induced SOC. Here, we show that the presence of backsca…
▽ More
Inducing and controlling spin-orbit coupling (SOC) in graphene is key to create topological states of matter, and for the realization of spintronic devices. Placing graphene onto a transition metal dichalcogenide is currently the most successful strategy to achieve this goal, but there is no consensus as to the nature and the magnitude of the induced SOC. Here, we show that the presence of backscattering in graphene-on-WSe$_2$ heterostructures can be used to probe SOC and to determine its strength quantitatively, by imaging quasiparticle interference with a scanning tunneling microscope. A detailed theoretical analysis of the Fourier transform of quasiparticle interference images reveals that the induced SOC consists of a valley-Zeeman ($λ_{\text{vZ}}\approx 2$ meV) and a Rashba ($λ_\text{R}\approx 15$ meV) term, one order of magnitude larger than what theory predicts, but in excellent agreement with earlier transport experiments. The validity of our analysis is confirmed by measurements on a 30 degree twist angle heterostructure that exhibits no backscattering, as expected from symmetry considerations. Our results demonstrate a viable strategy to determine SOC quantitatively by imaging quasiparticle interference.
△ Less
Submitted 9 December, 2022;
originally announced December 2022.
-
Light sources with bias tunable spectrum based on van der Waals interface transistors
Authors:
Hugo Henck,
Diego Mauro,
Daniil Domaretskiy,
Marc Philippi,
Shahriar Memaran,
Wenkai Zheng,
Zhengguang Lu,
Dmitry Shcherbakov,
Chun Ning Lau,
Dmitry Smirnov,
Luis Balicas,
Kenji Watanabe,
Vladimir I. Fal'ko,
Ignacio Gutiérrez-Lezama,
Nicolas Ubrig,
Alberto F. Morpurgo
Abstract:
Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broa…
▽ More
Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage -- by suitably selecting the material forming the interfaces -- and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.
△ Less
Submitted 8 July, 2022; v1 submitted 4 January, 2022;
originally announced January 2022.
-
Flip** exciton angular momentum with chiral phonons in MoSe$_2$/WSe$_2$ heterobilayers
Authors:
A. Delhomme,
D. Vaclavkova,
A. Slobodeniuk,
M. Orlita,
M. Potemski,
D. M. Basko,
K. Watanabe,
T. Taniguchi,
D. Mauro,
C. Barreteau,
E. Giannini,
A. F. Morpurgo,
N. Ubrig,
C. Faugeras
Abstract:
Identifying quantum numbers to label elementary excitations is essential for the correct description of light-matter interaction in solids. In monolayer semiconducting transition metal dichalcogenides (TMDs) such as MoSe$_2$ or WSe$_2$, most optoelectronic phenomena are described well by labelling electron and hole states with the spin projection along the normal to the layer (S$_z$). In contrast,…
▽ More
Identifying quantum numbers to label elementary excitations is essential for the correct description of light-matter interaction in solids. In monolayer semiconducting transition metal dichalcogenides (TMDs) such as MoSe$_2$ or WSe$_2$, most optoelectronic phenomena are described well by labelling electron and hole states with the spin projection along the normal to the layer (S$_z$). In contrast, for WSe$_2$/MoSe$_2$ interfaces recent experiments show that taking S$_z$ as quantum number is not a good approximation, and spin mixing needs to be always considered. Here we argue that the correct quantum number for these systems is not S$_z$, but the $z$-component of the total angular momentum -- J$_z$ = L$_z$ + S$_z$ -- associated to the C$_3$ rotational lattice symmetry, which assumes half-integer values corresponding modulo 3 to distinct states. We validate this conclusion experimentally through the observation of strong intervalley scattering mediated by chiral optical phonons that -- despite carrying angular momentum 1 -- cause resonant intervalley transitions of excitons, with an angular momentum difference of 2.
△ Less
Submitted 27 February, 2020;
originally announced February 2020.
-
Multi-frequency Shubnikov-de Haas oscillations in topological semimetal Pt$_2$HgSe$_3$
Authors:
Diego Mauro,
Hugo Henck,
Marco Gibertini,
Michele Filippone,
Enrico Giannini,
Ignacio Gutierrez-Lezama,
Alberto F. Morpurgo
Abstract:
Monolayer jacutingaite (Pt$_2$HgSe$_3$) has been recently identified as a candidate quantum spin Hall system with a 0.5 eV band gap, but no transport measurements have been performed so far on this material, neither in monolayer nor in the bulk. By using a dedicated high-pressure technique, we grow crystals enabling the exfoliation of 50-100 nm thick layers and the realization of devices for contr…
▽ More
Monolayer jacutingaite (Pt$_2$HgSe$_3$) has been recently identified as a candidate quantum spin Hall system with a 0.5 eV band gap, but no transport measurements have been performed so far on this material, neither in monolayer nor in the bulk. By using a dedicated high-pressure technique, we grow crystals enabling the exfoliation of 50-100 nm thick layers and the realization of devices for controlled transport experiments. Magnetoresistance measurements indicate that jacutingaite is a semimetal, exhibiting Shubnikov-de Haas (SdH) resistance oscillations with a multi-frequency spectrum. We adapt the Lifshitz-Kosevich formula to analyze quantitatively the SdH resistance oscillations in the presence of multiple frequencies, and find that the experimental observations are overall reproduced well by band structure ab-initio calculations for bulk jacutingaite. Together with the relatively high electron mobility extracted from the experiments ($\approx 2000$ cm$^2$/Vs, comparable to what is observed in WTe$_2$ crystals of the same thickness), our results indicate that monolayer jacutingaite should provide an excellent platform to investigate transport in 2D quantum spin Hall systems.
△ Less
Submitted 28 May, 2020; v1 submitted 29 October, 2019;
originally announced October 2019.
-
Scanning Tunneling Microscopy of an Air Sensitive Dichalcogenide Through an Encapsulating Layer
Authors:
Jose Martinez-Castro,
Diego Mauro,
Árpád Pásztor,
Ignacio Gutiérrez-Lezama,
Alessandro Scarfato,
Alberto F. Morpurgo,
Christoph Renner
Abstract:
Many atomically thin exfoliated 2D materials degrade when exposed to ambient conditions. They can be protected and investigated by means of transport and optical measurements if they are encapsulated between chemically inert single layers in the controlled atmosphere of a glove box. Here, we demonstrate that the same encapsulation procedure is also compatible with scanning tunneling microscopy (ST…
▽ More
Many atomically thin exfoliated 2D materials degrade when exposed to ambient conditions. They can be protected and investigated by means of transport and optical measurements if they are encapsulated between chemically inert single layers in the controlled atmosphere of a glove box. Here, we demonstrate that the same encapsulation procedure is also compatible with scanning tunneling microscopy (STM) and spectroscopy (STS). To this end, we report a systematic STM/STS investigation of a model system consisting of an exfoliated 2H-NbSe2 crystal capped with a protective 2H-MoS2 monolayer. We observe different electronic coupling between MoS2 and NbSe2, from a strong coupling when their lattices are aligned within a few degrees to 2
essentially no coupling for 30° misaligned layers. We show that STM always probes intrinsic NbSe2 properties such as the superconducting gap and charge density wave at low temperature when setting the tunneling bias inside the MoS2 band gap, irrespective of the relative angle between the NbSe2 and MoS2 lattices. This study demonstrates that encapsulation is fully compatible with STM/STS investigations of 2D materials.
△ Less
Submitted 13 February, 2019;
originally announced February 2019.
-
Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides
Authors:
Zhe Wang,
Dong-Keun Ki,
Jun Yong Khoo,
Diego Mauro,
Helmuth Berger,
Leonid S. Levitov,
Alberto F. Morpurgo
Abstract:
We use a combination of experimental techniques to demonstrate a general occurrence of spin-orbit interaction (SOI) in graphene on transition metal dichalcogenide (TMD) substrates. Our measurements indicate that SOI is ultra-strong and extremely robust, despite it being merely interfacially-induced, with neither graphene nor the TMD substrates changing their structure. This is found to be the case…
▽ More
We use a combination of experimental techniques to demonstrate a general occurrence of spin-orbit interaction (SOI) in graphene on transition metal dichalcogenide (TMD) substrates. Our measurements indicate that SOI is ultra-strong and extremely robust, despite it being merely interfacially-induced, with neither graphene nor the TMD substrates changing their structure. This is found to be the case irrespective of the TMD material used, of the transport regime, of the carrier type in the graphene band, and of the thickness of the graphene multilayer. Specifically, we perform weak antilocalization measurements as the simplest and most general diagnostic of SOI, and show that the spin relaxation time is very short in all cases regardless of the elastic scattering time. Such a short spin-relaxation time strongly suggests that the SOI originates from a modification of graphene band structure. We confirmed this expectation by measuring a gate-dependent beating, and a corresponding frequency splitting, in the low-field Shubnikov-de Haas magneto-resistance oscillations in high quality bilayer graphene on WSe$_2$. These measurements provide an unambiguous diagnostic of a SOI-induced splitting in the electronic band structure, and their analysis allows us to determine the SOI coupling constants for the Rashba term and the so-called spin-valley coupling term, i.e., the terms that were recently predicted theoretically for interface-induced SOI in graphene. The magnitude of the SOI splitting is found to be on the order of 10 meV, more than 100 times greater than the SOI intrinsic to graphene. Both the band character of the interfacially induced SOI, as well as its robustness and large magnitude make graphene-on-TMD a promising system to realize and explore a variety of spin-dependent transport phenomena, such as, in particular, spin-Hall and valley-Hall topological insulating states.
△ Less
Submitted 6 June, 2016;
originally announced June 2016.
