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Tuning superconductivity in nanosecond laser annealed boron doped $Si_{1-x}Ge_{x}$ epilayers
Authors:
S. Nath,
I. Turan,
L. Desvignes,
L. Largeau,
O. Mauguin,
M. Túnica,
M. Amato,
C. Renard,
G. Hallais,
D. Débarre,
F. Chiodi
Abstract:
Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser do**, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$ ranging from 0 to 0.21 is incorporated in $Si:B$ : 1) through a precursor gas by Gas Immersion Laser Do**; 2) by ion implantation, followed by nanosecond laser ann…
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Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser do**, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$ ranging from 0 to 0.21 is incorporated in $Si:B$ : 1) through a precursor gas by Gas Immersion Laser Do**; 2) by ion implantation, followed by nanosecond laser annealing; 3) by UHV-CVD growth of a thin Ge layer, followed by nanosecond laser annealing. The 30 nm and 80 nm thick $Si_{1-x}Ge_{x}:B$ epilayers display superconducting critical temperatures $T_c$ tuned by B and Ge between 0 and 0.6 K. Within BCS weak-coupling theory, $T_c$ evolves exponentially with both the density of states and the electron-phonon potential. While B do** affects both, through the increase of the carrier density and the tensile strain, Ge incorporation allows addressing independently the lattice deformation influence on superconductivity. To estimate the lattice parameter modulation with B and Ge, Vegard's law is validated for the ternary $SiGeB$ bulk alloy by Density Functional Theory calculations. Its validity is furthermore confirmed experimentally by X-Ray Diffraction. We highlight a global linear dependence of $T_c$ vs. lattice parameter, common for both $Si:B$ and $Si_{1-x}Ge_{x}:B$, with $δT_c/T_c \sim 50\,\%$ for $δa/a \sim 1\,\%$.
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Submitted 3 April, 2024;
originally announced April 2024.
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Relaxation mechanism of GaP grown on 001 Sisubstrates: influence of defects on the growth of AlGaPlayers on GaP/Si templates
Authors:
Konstantinos Pantzas,
Grégoire Beaudoin,
Myriam Bailly,
Aude Martin,
Arnaud Grisard,
Daniel Dolfi,
Olivia Mauguin,
Ludovic Largeau,
Isabelle Sagnes,
Gilles Patriarche
Abstract:
The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the template originally presents an excellent surfacemorphology, annealing at high enough temperatures to remove the native oxideprior to growth leads to plastic relaxation, accompanied by a variety of defects,including a dense gri…
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The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the template originally presents an excellent surfacemorphology, annealing at high enough temperatures to remove the native oxideprior to growth leads to plastic relaxation, accompanied by a variety of defects,including a dense grid of micro-twins. These micro-twins detrimentally affectGaP and AlGaP layers grown subsequently on the template.
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Submitted 8 January, 2021;
originally announced January 2021.
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Coherent generation and detection of acoustic phonons in topological nanocavities
Authors:
G. Arregui,
O. Ortíz,
M. Esmann,
C. M. Sotomayor-Torres,
C. Gomez-Carbonell,
O. Mauguin,
B. Perrin,
A. Lemaître,
P. D. García,
N. D. Lanzillotti-Kimura
Abstract:
Inspired by concepts developed for fermionic systems in the framework of condensed matter physics, topology and topological states are recently being explored also in bosonic systems. The possibility of engineering systems with unidirectional wave propagation and protected against disorder is at the heart of this growing interest. Topogical acoustic effects have been observed in a variety of syste…
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Inspired by concepts developed for fermionic systems in the framework of condensed matter physics, topology and topological states are recently being explored also in bosonic systems. The possibility of engineering systems with unidirectional wave propagation and protected against disorder is at the heart of this growing interest. Topogical acoustic effects have been observed in a variety of systems, most of them based on kHz-MHz sound waves, with typical wavelength of the order of the centimeter. Recently, some of these concepts have been successfully transferred to acoustic phonons in nanoscaled multilayered systems. The reported demonstration of confined topological phononic modes was based on Raman scattering spectroscopy, yet the resolution did not suffice to determine lifetimes and to identify other acoustic modes in the system. Here, we use time-resolved pump-probe measurements using an asynchronous optical sampling (ASOPS) technique to overcome these resolution limitations. By means of one-dimensional GaAs/AlAs distributed Bragg reflectors (DBRs) as building blocks, we engineer high frequency ($\sim$ 200 GHz) topological acoustic interface states. We are able to clearly distinguish confined topological states from stationary band edge modes. The detection scheme reflects the symmetry of the modes directly through the selection rules, evidencing the topological nature of the measured confined state. These experiments enable a new tool in the study of the more complex topology-driven phonon dynamics such as phonon nonlinearities and optomechanical systems with simultaneous confinement of light and sound.
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Submitted 24 November, 2018;
originally announced November 2018.
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Optical spectroscopy of two-dimensional layered $(C_{6}H_{5}C_{2}H_{4}-NH_{3})_{2}-PbI_{4}$ perovskite
Authors:
K. Gauthron,
J. S. Lauret,
L. Doyennette,
G. Lanty,
A. Al Choueiry,
S. J. Zhang,
A. Brehier,
L. Largeau,
O. Mauguin,
J. Bloch,
E. Deleporte
Abstract:
We report on optical spectroscopy (photoluminescence and photoluminescence excitation) on two-dimensional self-organized layers of $(C_{6}H_{5}C_{2}H_{4}-NH_{3})_{2}PbI_{4}$ perovskite. Temperature and excitation power dependance of the optical spectra gives a new insight into the excitonic and phononic properties of this hybrid organic/inorganic semiconductor. In particular, exciton-phonon inte…
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We report on optical spectroscopy (photoluminescence and photoluminescence excitation) on two-dimensional self-organized layers of $(C_{6}H_{5}C_{2}H_{4}-NH_{3})_{2}PbI_{4}$ perovskite. Temperature and excitation power dependance of the optical spectra gives a new insight into the excitonic and phononic properties of this hybrid organic/inorganic semiconductor. In particular, exciton-phonon interaction is found to be more than one order of magnitude higher than in GaAs QWs. As a result, photoluminescence emission lines have to be interpreted in the framework of a polaron model.
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Submitted 30 August, 2009;
originally announced August 2009.
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Phosphorous alloying: controlling the magnetic anisotropy in ferromagnetic (Ga,Mn)(As,P) Layers
Authors:
M. Cubukcu,
H. J. von Bardeleben,
Kh. Khazen,
J. L. Cantin,
O. Mauguin,
L. Largeau,
A. Lemaitre
Abstract:
Phosphorous alloying of GaMnAs thin films has been used for the manipulation of the magnetic anisotropies in ferromagnetic Ga0.93Mn0.07As1-yPy layers. We have determined the anisotropy constants as a function of temperature for phosphorous alloying levels between 0 and 8.8 at % for a Mn do** level of ~ 7at%. We show that it is possible to obtain layers with robust ferromagnetism and either in-…
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Phosphorous alloying of GaMnAs thin films has been used for the manipulation of the magnetic anisotropies in ferromagnetic Ga0.93Mn0.07As1-yPy layers. We have determined the anisotropy constants as a function of temperature for phosphorous alloying levels between 0 and 8.8 at % for a Mn do** level of ~ 7at%. We show that it is possible to obtain layers with robust ferromagnetism and either in-plane or out-of plane easy axes with small barriers for magnetization reorientation by phosphorous alloying with y< 6at% or y> 6at%. The critical temperatures are not significantly increased by the P alloying.
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Submitted 10 August, 2009; v1 submitted 1 August, 2009;
originally announced August 2009.
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Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers
Authors:
Aristide Lemaître,
Audrey Miard,
Laurent Travers,
Olivia Mauguin,
Ludovic Largeau,
Catherine Gourdon,
Vincent Jeudy,
Michael Tran,
Jean-Marie George
Abstract:
A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnetic anisotropy. In particular a reorientation of the easy axis toward the growth direction is observed for high P concentration. It offers an interes…
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A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnetic anisotropy. In particular a reorientation of the easy axis toward the growth direction is observed for high P concentration. It offers an interesting alternative to the metamorphic approach, in particular for magnetization reversal experiments where epitaxial defects stongly affect the domain wall propagation.
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Submitted 4 July, 2008;
originally announced July 2008.
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Evolution of the magnetic anisotropy with carrier density in hydrogenated (Ga,Mn)As
Authors:
Laura Thevenard,
Ludovic Largeau,
Olivia Mauguin,
Aristide Lemaître,
Khashayar Khazen,
Jürgen Von Bardeleben
Abstract:
The magnetic properties of (Ga,Mn)As thin films depend on both the Mn do** level and the carrier concentration. Using a post growth hydrogenation process we show that it is possible to decrease the hole density from 1.1021 cm-3 to <1017 cm-3 while maintaining the manganese concentration constant. For such a series of films we have investigated the variation of the magnetization, the easy and h…
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The magnetic properties of (Ga,Mn)As thin films depend on both the Mn do** level and the carrier concentration. Using a post growth hydrogenation process we show that it is possible to decrease the hole density from 1.1021 cm-3 to <1017 cm-3 while maintaining the manganese concentration constant. For such a series of films we have investigated the variation of the magnetization, the easy and hard axes of magnetization, the critical temperatures, the coercive fields and the magnetocrystalline anisotropy constants as a function of temperature using magnetometry, ferromagnetic resonance and magneto-transport measurements. In particular, we evidenced that magnetic easy axes flipped from out-of-plane [001] to in-plane [100] axis, followed by the <110> axes, with increasing hole density and temperature. Our study concluded on a general agreement with mean-field theory predictions of the expected easy axis reversals, and of the weight of uniaxial and cubic anisotropies in this material.
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Submitted 23 February, 2007;
originally announced February 2007.
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Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy
Authors:
Laura Thevenard,
Ludovic Largeau,
Olivia Mauguin,
Gilles Patriarche,
Aristide Lemaître,
Nicolas Vernier,
Jacques Ferré
Abstract:
The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic semiconductor. The magnetic layer was grown under tensile strain on a relaxed GaInAs buffer layer using a procedure that limits the density of threa…
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The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic semiconductor. The magnetic layer was grown under tensile strain on a relaxed GaInAs buffer layer using a procedure that limits the density of threading dislocations. Magnetometry, magneto-transport and polar magneto-optical Kerr effect (PMOKE) measurements reveal the high quality of this layer, in particular through its high Curie temperature (130 K) and well-defined magnetic anisotropy. We show that magnetization reversal is initiated from a limited number of nucleation centers and develops by easy domain wall propagation. Furthermore, MOKE microscopy allowed us to characterize in detail the magnetic domain structure. In particular we show that domain shape and wall motion are very sensitive to some defects, which prevents a periodic arrangement of the domains. We ascribed these defects to threading dislocations emerging in the magnetic layer, inherent to the growth mode on a relaxed buffer.
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Submitted 17 February, 2006; v1 submitted 16 February, 2006;
originally announced February 2006.
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Tuning the ferromagnetic properties of hydrogenated GaMnAs
Authors:
Laura Thevenard,
Ludovic Largeau,
Olivia Mauguin,
Aristide Lemaître,
Bertrand Theys
Abstract:
Hydrogenation and posthydrogenation annealings have been used as a very efficient tool to tune the hole density over a wide range, at fixed magnetic moment concentration, in thin GaMnAs layers. Reduction of the hole density resulted in strong modifications of their ferromagnetic properties. In particular, we observed in magnetotransport experiments the decrease of the Curie temperature, along wi…
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Hydrogenation and posthydrogenation annealings have been used as a very efficient tool to tune the hole density over a wide range, at fixed magnetic moment concentration, in thin GaMnAs layers. Reduction of the hole density resulted in strong modifications of their ferromagnetic properties. In particular, we observed in magnetotransport experiments the decrease of the Curie temperature, along with modifications of the magnetic anisotropy, a behavior consistent with the mean-field theory.
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Submitted 12 January, 2006; v1 submitted 15 April, 2005;
originally announced April 2005.
