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Non-coplanar spin structure in a metallic thin film of triangular lattice antiferromagnet CrSe
Authors:
Yusuke Tajima,
Junichi Shiogai,
Kohei Ueda,
Hirotake Suzaki,
Kensuke Takaki,
Takeshi Seki,
Kazutaka Kudo,
Jobu Matsuno
Abstract:
An antiferromagnetic metal with two-dimensional triangular network offers a unique playground of intriguing magneto-transport properties and functionalities stemming from interplay between conducting electrons and intricate magnetic phases. A NiAs-type CrSe is one of the candidates owing to alternate stackings of Cr and Se triangular atomic networks in its crystal structure. While fabrication of C…
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An antiferromagnetic metal with two-dimensional triangular network offers a unique playground of intriguing magneto-transport properties and functionalities stemming from interplay between conducting electrons and intricate magnetic phases. A NiAs-type CrSe is one of the candidates owing to alternate stackings of Cr and Se triangular atomic networks in its crystal structure. While fabrication of CrSe thin films is indispensable to develop functional devices, studies on its thin-film properties have been limited to date due to the lack of metallic samples. Here, we report on realization of metallic conductivities of CrSe thin films, which allows to investigate their intrinsic magneto-transport properties. The metallic sample exhibits co-occurrence of a weak ferromagnetism with perpendicular magnetic anisotropy and the antiferromagnetic behavior, indicating the presence of non-coplanar spin structures. In addition, control of polarity and tilting angle of the non-coplanar spin structure is accomplished by a sign of cooling magnetic fields. The observed non-coplanar spin structure, which can be a source of emergent magnetic field acting on the conducting electrons, highlights a high potential of the triangular lattice antiferromagnet and provide unique platform for functional thin-film devices composed of NiAs-type derivative Cr chalcogenides and pnictides.
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Submitted 26 March, 2024;
originally announced March 2024.
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Effect of interface quality on spin Hall magnetoresistance in Pt/MgFe$_{2}$O$_{4}$ bilayers
Authors:
Masafumi Sugino,
Kohei Ueda,
Takanori Kida,
Masayuki Hagiwara,
Jobu Matsuno
Abstract:
We report on spin Hall magnetoresistance (SMR) in bilayers composed of Pt and magnetic insulator MgFe$_{2}$O$_{4}$ (MFO) with spinel structure. The Pt thickness dependence of the SMR reveals that annealing of the MFO surface before depositing the Pt layer is crucial for a large SMR with better interface quality. We also found that oxygen pressure during the MFO growth hardly affects the SMR while…
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We report on spin Hall magnetoresistance (SMR) in bilayers composed of Pt and magnetic insulator MgFe$_{2}$O$_{4}$ (MFO) with spinel structure. The Pt thickness dependence of the SMR reveals that annealing of the MFO surface before depositing the Pt layer is crucial for a large SMR with better interface quality. We also found that oxygen pressure during the MFO growth hardly affects the SMR while it influences on magnetic property of the MFO film. Our findings provide important clues to further understanding the spin transport at interfaces containing magnetic insulators, facilitating development of low power consumption devices.
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Submitted 31 December, 2023; v1 submitted 1 December, 2023;
originally announced December 2023.
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Impact of epitaxial strain relaxation on ferromagnetism in a freestanding La2/3Sr1/3MnO3 membrane
Authors:
Ryuji Atsumi,
Junichi Shiogai,
Takumi Yamazaki,
Takeshi Seki,
Kohei Ueda,
Jobu Matsuno
Abstract:
Manganite perovskites host emerging physical properties of strongly-correlated electrons with charge, spin, and lattice degrees of freedom. Using epitaxial lift-off technique, we report enhancement of saturation magnetization and ferromagnetic transition temperature of the freestanding La2/3Sr1/3MnO3 membrane compared with the as-grown film on SrTiO3 substrate involving lateral tensile strain. Str…
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Manganite perovskites host emerging physical properties of strongly-correlated electrons with charge, spin, and lattice degrees of freedom. Using epitaxial lift-off technique, we report enhancement of saturation magnetization and ferromagnetic transition temperature of the freestanding La2/3Sr1/3MnO3 membrane compared with the as-grown film on SrTiO3 substrate involving lateral tensile strain. Structural analysis reveals shrinkage of unit-cell volume by tensile strain relaxation in the freestanding membrane, which causes enhancement of the ferromagnetic interaction. The impact of the microscopic lattice deformation on the ferromagnetism of La2/3Sr1/3MnO3 indicates a high potential of this material for flexible electronics application with intriguing functionalities in strongly-correlated electron systems.
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Submitted 30 August, 2023;
originally announced August 2023.
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Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates
Authors:
Kenta Fukushima,
Kohei Ueda,
Naoki Moriuchi,
Takanori Kida,
Masayuki Hagiwara,
Jobu Matsuno
Abstract:
We study spin Hall magnetoresistance (SMR) in Pt/ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$ (YIG) bilayers by focusing on crystallinity, magnetization, and interface roughness by controlling post-annealing temperatures. The SMR in the Pt/YIG grown on Si substrate is comparable to that grown on widely used Gd$_{3}$Ga$_{5}$O$_{12}$ substrate, indicating that the large SMR can be achieved irresp…
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We study spin Hall magnetoresistance (SMR) in Pt/ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$ (YIG) bilayers by focusing on crystallinity, magnetization, and interface roughness by controlling post-annealing temperatures. The SMR in the Pt/YIG grown on Si substrate is comparable to that grown on widely used Gd$_{3}$Ga$_{5}$O$_{12}$ substrate, indicating that the large SMR can be achieved irrespective to the crystallinity. We deduced the spin mixing conductance from the Pt thickness dependence of the SMR to find the high interface quality of the optimized Pt/YIG grown on Si in terms of spin current. We also clarified that the SMR correlates well with the magnetization, the interface roughness, and carrier density. These findings highlight that optimizing YIG properties is a key to control of magnetization by spin current, leading to the development of low power consumption spintronic device based on the magnetic insulator.
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Submitted 4 June, 2023;
originally announced June 2023.
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Spin-orbit torque generation in bilayers composed of CoFeB and epitaxial SrIrO$_{3}$ grown on an orthorhombic DyScO$_{3}$ substrate
Authors:
Sosuke Hori,
Kohei Ueda,
Takanori Kida,
Masayuki Hagiwara,
Jobu Matsuno
Abstract:
We report on the highly efficient spin-orbit torque (SOT) generation in epitaxial SrIrO$_{3}$(SIO), which is grown on an orthorhombic DyScO$_{3}$(110) substrate. By conducting harmonic Hall measurement in Co$_{20}$Fe$_{60}$B$_{20}$ (CoFeB)/SIO bilayers, we characterize two kinds of the SOTs, i.e., dam**like (DL) and fieldlike ones to find that the former is much larger than the latter. By compar…
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We report on the highly efficient spin-orbit torque (SOT) generation in epitaxial SrIrO$_{3}$(SIO), which is grown on an orthorhombic DyScO$_{3}$(110) substrate. By conducting harmonic Hall measurement in Co$_{20}$Fe$_{60}$B$_{20}$ (CoFeB)/SIO bilayers, we characterize two kinds of the SOTs, i.e., dam**like (DL) and fieldlike ones to find that the former is much larger than the latter. By comparison with the Pt control sample with the same CoFeB thickness, the observed DL SOT efficiency $ξ$$_{DL}$ of SIO ($\sim$0.32) is three times higher than that of Pt ($\sim$0.093). The $ξ$$_{DL}$ is nearly constant as a function of the CoFeB thickness, suggesting that the SIO plays a crucial role in the large SOT generation. These results on the CoFeB/SIO bilayers highlight that the epitaxial SIO is promising for low-current and reliable spin-orbit torque-controlled devices.
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Submitted 4 June, 2023;
originally announced June 2023.
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Spin current generation from an epitaxial tungsten dioxide WO$_{2}$
Authors:
Kohei Ueda,
Hayato Fujii,
Takanori Kida,
Masayuki Hagiwara,
Jobu Matsuno
Abstract:
We report on efficient spin current generation at room temperature in rutile type WO$_{2}$ grown on Al$_{2}$O$_{3}$(0001) substrate. The optimal WO$_{2}$ film has (010)-oriented monoclinically distorted rutile structure with metallic conductivity due to 5$\it{d}$$^2$ electrons, as characterized by x-ray diffraction, electronic transport, and x-ray photoelectron spectroscopy. By conducting harmonic…
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We report on efficient spin current generation at room temperature in rutile type WO$_{2}$ grown on Al$_{2}$O$_{3}$(0001) substrate. The optimal WO$_{2}$ film has (010)-oriented monoclinically distorted rutile structure with metallic conductivity due to 5$\it{d}$$^2$ electrons, as characterized by x-ray diffraction, electronic transport, and x-ray photoelectron spectroscopy. By conducting harmonic Hall measurement in Ni$_{81}$Fe$_{19}$/WO$_{2}$ bilayer, we estimate two symmetries of the spin-orbit torque (SOT), i.e., dam**like (DL) and fieldlike ones to find that the former is larger than the latter. By comparison with the Ni$_{81}$Fe$_{19}$/W control sample, the observed DL SOT efficiency $ξ$$_{DL}$ of WO$_{2}$ (+0.174) is about two thirds of that of W (-0.281) in magnitude, with a striking difference in their signs. The magnitude of the $ξ$$_{DL}$ of WO$_{2}$ exhibits comparable value to those of widely reported Pt and Ta, and Ir oxide IrO$_{2}$. The positive sign of the $ξ$$_{DL}$ of WO$_{2}$ can be explained by the preceding theoretical study based on the 4$\it{d}$ oxides. These results highlight that the epitaxial WO$_{2}$ offers a great opportunity of rutile oxides with spintronic functionalities, leading to future spin-orbit torque-controlled devices.
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Submitted 20 June, 2023; v1 submitted 29 May, 2023;
originally announced May 2023.
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Condensation of cometary silicate dust using an induction thermal plasma system I. Enstatite and CI chondritic composition
Authors:
T. H. Kim,
A. Takigawa,
A. Tsuchiyama,
J. Matsuno,
S. Enju,
H. Kawano,
H. Komaki
Abstract:
Glass with embedded metal and sulfides (GEMS) is a major component of chondritic porous interplanetary dust particles. Although GEMS is one of the most primitive components in the Solar System, its formation process and conditions have not been constrained. We performed condensation experiments of gases in the system of Mg-Si-O (MgSiO3 composition) and of the S-free CI chondritic composition (Si-M…
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Glass with embedded metal and sulfides (GEMS) is a major component of chondritic porous interplanetary dust particles. Although GEMS is one of the most primitive components in the Solar System, its formation process and conditions have not been constrained. We performed condensation experiments of gases in the system of Mg-Si-O (MgSiO3 composition) and of the S-free CI chondritic composition (Si-Mg-Fe-Na-Al-Ca-Ni-O system) in induction thermal plasma equipment. Amorphous Mg-silicate particles condensed in the experiments of the Mg-Si-O system, and their grain size distribution depended on the experimental conditions (mainly partial pressure of SiO). In the CI chondritic composition experiments, irregularly shaped amorphous silicate particles of less than a few hundred nanometers embedded with multiple Fe-Ni nanoparticles of ~<20 nm were successfully synthesized. These characteristics are very similar to those of GEMS, except for the presence of FeSi instead of sulfide grains. We propose that the condensation of amorphous silicate grains smaller than a few tens of nanometers and with metallic cores, followed by coagulation, could be the precursor material that forms GEMS prior to sulfidation.
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Submitted 21 November, 2021;
originally announced November 2021.
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Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers
Authors:
Kohei Ueda,
Naoki Moriuchi,
Kenta Fukushima,
Takanori Kida,
Masayuki Hagiwara,
Jobu Matsuno
Abstract:
The 5d transition-metal oxides have been an intriguing platform to demonstrate efficient charge to spin current conversion due to a unique electronic structure dominated by strong spin-orbit coupling. Here, we report on stacking-order effect of spin-orbit torque (SOT), spin-Hall magnetoresistance, and magnetic anisotropy in bilayer Ni$_{81}$Fe$_{19}$-5d iridium oxide, IrO$_2$. While all the IrO…
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The 5d transition-metal oxides have been an intriguing platform to demonstrate efficient charge to spin current conversion due to a unique electronic structure dominated by strong spin-orbit coupling. Here, we report on stacking-order effect of spin-orbit torque (SOT), spin-Hall magnetoresistance, and magnetic anisotropy in bilayer Ni$_{81}$Fe$_{19}$-5d iridium oxide, IrO$_2$. While all the IrO$_2$ and Pt control samples exhibit large dam**like-SOT generation stemming from the efficient charge to spin current conversion, the magnitude of the SOT is larger in the IrO$_2$ (Pt)-bottom sample than in the IrO$_2$ (Pt)-top one. The fieldlike-SOT has even more significant stack order effect, resulting in an opposite sign in the IrO$_2$ samples in contrast to the same sign in the Pt samples. Furthermore, we observe that the magnetic anisotropy energy density and the anomalous Hall effect are increased in the IrO$_2$ (Pt)-bottom sample, suggesting enhanced interfacial perpendicular magnetic anisotropy. Our findings highlight the significant influence of the stack order on spin transport and magnetotransport properties of Ir oxide/ferromagnet systems, providing useful information on design of SOT devices including 5d transition-metal oxides.
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Submitted 6 October, 2021;
originally announced October 2021.
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Spin-orbit torque generation in NiFe/IrO2 bilayers
Authors:
Kohei Ueda,
Naoki Moriuchi,
Kenta Fukushima,
Takanori Kida,
Masayuki Hagiwara,
Jobu Matsuno
Abstract:
The 5d transition-metal oxides have a unique electronic structure dominated by strong spin-orbit coupling and hence they can be an intriguing platform to explore spin-current physics. Here, we report on room-temperature generation of spin-orbit torque (SOT) from a conductive 5d iridium oxide, IrO2. By measuring second-harmonic Hall resistance of Ni81Fe19/IrO2 bilayers, we find both dam**like and…
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The 5d transition-metal oxides have a unique electronic structure dominated by strong spin-orbit coupling and hence they can be an intriguing platform to explore spin-current physics. Here, we report on room-temperature generation of spin-orbit torque (SOT) from a conductive 5d iridium oxide, IrO2. By measuring second-harmonic Hall resistance of Ni81Fe19/IrO2 bilayers, we find both dam**like and fieldlike SOTs. The former is larger than the latter, enabling easier control of magnetization. We also observe that the dam**like SOT efficiency has a significant dependence on IrO2 thickness, which is well described by the drift-diffusion model based on the bulk spin Hall effect. We deduce the effective spin Hall angle of +0.093 +- 0.003 and the spin-diffusion length of 1.7 +- 0.2 nm. By comparison with control samples Pt and Ir, we show that the effective spin Hall angle of IrO2 is comparable to that of Pt and seven times higher than that of Ir. The fieldlike SOT efficiency has a negative sign without appreciable dependence on the thickness, in contrast to the dam**like SOT. This suggests that the fieldlike SOT likely stems from the interface. These experimental findings suggest that the uniqueness of the electronic structure of 5d transition-metal oxides is crucial for highly efficient charge to spin-current conversion.
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Submitted 4 October, 2021;
originally announced October 2021.
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Molecular beam epitaxy of three-dimensionally thick Dirac semimetal Cd3As2 films
Authors:
Y. Nakazawa,
M. Uchida,
S. Nishihaya,
S. Sato,
A. Nakao,
J. Matsuno,
M. Kawasaki
Abstract:
Rapid progress of quantum transport study in topological Dirac semimetal, including observations of quantum Hall effect in two-dimensional (2D) Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ samples, has uncovered even more interesting quantum transport properties in high-quality and three-dimensional (3D) samples. However, such 3D Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ films with low carrier density and high ele…
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Rapid progress of quantum transport study in topological Dirac semimetal, including observations of quantum Hall effect in two-dimensional (2D) Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ samples, has uncovered even more interesting quantum transport properties in high-quality and three-dimensional (3D) samples. However, such 3D Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ films with low carrier density and high electron mobility have been hardly obtained. Here we report the growth and characterization of 3D thick Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ films adopting molecular beam epitaxy. The highest electron mobility ($μ$ = 3 $\times$ 10$^{4}$ cm$^{2}$/Vs) among the reported film samples has been achieved at a low carrier density ($\textit{n} = 5$ $\times$ 10$^{16}$ cm$^{-3}$). In the magnetotransport measurement, Hall plateau-like structures are commonly observed in spite of the 3D thick films ($\textit{t} = 120$ nm). On the other hand, field angle dependence of the plateau-like structures and corresponding Shubunikov-de Haas oscillations rather shows a 3D feature, suggesting the appearance of unconventional magnetic orbit, also distinct from the one described by the semiclassical Weyl-orbit equation.
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Submitted 17 July, 2019;
originally announced July 2019.
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Electric-field control of anomalous and topological Hall effects in oxide bilayer thin films
Authors:
Yuki Ohuchi,
Jobu Matsuno,
Naoki Ogawa,
Yusuke Kozuka,
Masaki Uchida,
Yoshinori Tokura,
Masashi Kawasaki
Abstract:
One of the key technologies in spintronics is to tame spin-orbit coupling (SOC) that links spin and motion of electrons, giving rise to intriguing magneto-transport properties in itinerant magnets. Prominent examples of such SOC-based phenomena are anomalous and topological Hall effects. However, controlling them by electric field has remained unachieved since electric field tends to be screened i…
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One of the key technologies in spintronics is to tame spin-orbit coupling (SOC) that links spin and motion of electrons, giving rise to intriguing magneto-transport properties in itinerant magnets. Prominent examples of such SOC-based phenomena are anomalous and topological Hall effects. However, controlling them by electric field has remained unachieved since electric field tends to be screened in itinerant magnets. Here we demonstrate that both anomalous and topological Hall effects can be modulated by electric field in oxide heterostructures consisting of ferromagnetic SrRuO$_{3}$ and nonmagnetic SrIrO$_{3}$. We observed clear electric-field effect only when SrIrO$_{3}$ is inserted between SrRuO$_{3}$ and a gate dielectric. Our results establish that strong SOC of nonmagnetic materials such as SrIrO$_{3}$ is essential in electrical tuning of these Hall effects and possibly other SOC-related phenomena.
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Submitted 18 January, 2018;
originally announced January 2018.
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Three-dimensional electronic structures and the metal-insulator transition in Ruddlesden-Popper iridates
Authors:
A. Yamasaki,
H. Fujiwara,
S. Tachibana,
D. Iwasaki,
Y. Higashino,
C. Yoshimi,
K. Nakagawa,
Y. Nakatani,
K. Yamagami,
H. Aratani,
O. Kirilmaz,
M. Sing,
R. Claessen,
H. Watanabe,
T. Shirakawa,
S. Yunoki,
A. Naitoh,
K. Takase,
J. Matsuno,
H. Takagi,
A. Sekiyama,
Y. Saitoh
Abstract:
In this study, we systematically investigate 3D momentum($\hbar k$)-resolved electronic structures of Ruddlesden-Popper-type iridium oxides Sr$_{n+1}$Ir$_n$O$_{3n+1}$ using soft-x-ray (SX) angle-resolved photoemission spectroscopy (ARPES). Our results provide direct evidence of an insulator-to-metal transition that occurs upon increasing the dimensionality of the IrO$_2$-plane structure. This tran…
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In this study, we systematically investigate 3D momentum($\hbar k$)-resolved electronic structures of Ruddlesden-Popper-type iridium oxides Sr$_{n+1}$Ir$_n$O$_{3n+1}$ using soft-x-ray (SX) angle-resolved photoemission spectroscopy (ARPES). Our results provide direct evidence of an insulator-to-metal transition that occurs upon increasing the dimensionality of the IrO$_2$-plane structure. This transition occurs when the spin-orbit-coupled $j_{\rm eff}$=1/2 band changes its behavior in the dispersion relation and moves across the Fermi energy. In addition, an emerging band along the $Γ$(0,0,0)-R($π$,$π$,$π$) direction is found to play a crucial role in the metallic characteristics of SrIrO$_3$. By scanning the photon energy over 350 eV, we reveal the 3D Fermi surface in SrIrO$_3$ and $k_z$-dependent oscillations of photoelectron intensity in Sr$_3$Ir$_2$O$_7$. In contrast to previously reported results obtained using low-energy photons, folded bands derived from lattice distortions and/or magnetic ordering make significantly weak (but finite) contributions to the $k$-resolved photoemission spectrum. At the first glance, this leads to the ambiguous result that the observed $k$-space topology is consistent with the unfolded Brillouin zone (BZ) picture derived from a non-realistic simple square or cubic Ir lattice. Through careful analysis, we determine that a superposition of the folded and unfolded band structures has been observed in the ARPES spectra obtained using photons in both ultraviolet and SX regions. To corroborate the physics deduced using low-energy ARPES studies, we propose to utilize SX-ARPES as a powerful complementary technique, as this method surveys more than one whole BZ and provides a panoramic view of electronic structures.
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Submitted 14 October, 2016;
originally announced October 2016.
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Interface-driven topological Hall effect in SrRuO$_3$-SrIrO$_3$ bilayer
Authors:
J. Matsuno,
N. Ogawa,
K. Yasuda,
F. Kagawa,
W. Koshibae,
N. Nagaosa,
Y. Tokura,
M. Kawasaki
Abstract:
Electron transport coupled with magnetism has attracted attention over the years as exemplified in anomalous Hall effect due to a Berry phase in momentum space. Another type of unconventional Hall effect -- topological Hall effect, originating from the real-space Berry phase, has recently become of great importance in the context of magnetic skyrmions. We have observed topological Hall effect in b…
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Electron transport coupled with magnetism has attracted attention over the years as exemplified in anomalous Hall effect due to a Berry phase in momentum space. Another type of unconventional Hall effect -- topological Hall effect, originating from the real-space Berry phase, has recently become of great importance in the context of magnetic skyrmions. We have observed topological Hall effect in bilayers consisting of ferromagnetic SrRuO$_3$ and paramagnetic SrIrO$_3$ over a wide region of both temperature and magnetic field. The topological term rapidly decreases with the thickness of SrRuO$_3$, ending up with the complete disappearance at 7 unit cells of SrRuO$_3$. Combined with model calculation, we concluded that the topological Hall effect is driven by interface Dzyaloshinskii-Moriya interaction, which is caused by both the broken inversion symmetry and the strong spin-orbit coupling of SrIrO$_3$. Such interaction is expected to realize the Néel-type magnetic skyrmion, of which size is estimated to be $\sim$10 nm from the magnitude of topological Hall resistivity. The results established that the high-quality oxide interface enables us to tune the chirality of the system; this can be a step towards the future topological electronics.
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Submitted 26 July, 2016;
originally announced July 2016.
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Fermi level dependent charge-to-spin current conversion by Dirac surface state of topological insulators
Authors:
K. Kondou,
R. Yoshimi,
A. Tsukazaki,
Y. Fukuma,
J. Matsuno,
K. S. Takahashi,
M. Kawasaki,
Y. Tokura,
Y. Otani
Abstract:
The spin-momentum locking at the Dirac surface state of a topological insulator (TI) offers a distinct possibility of a highly efficient charge-to-spin current (C-S) conversion compared with spin Hall effects in conventional paramagnetic metals. For the development of TI-based spin current devices, it is essential to evaluate its conversion efficiency quantitatively as a function of the Fermi leve…
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The spin-momentum locking at the Dirac surface state of a topological insulator (TI) offers a distinct possibility of a highly efficient charge-to-spin current (C-S) conversion compared with spin Hall effects in conventional paramagnetic metals. For the development of TI-based spin current devices, it is essential to evaluate its conversion efficiency quantitatively as a function of the Fermi level EF position. Here we exemplify a coefficient of qICS to characterize the interface C-S conversion effect by using spin torque ferromagnetic resonance (ST-FMR) for (Bi1-xSbx)2Te3 thin films whose EF is tuned across the band gap. In bulk insulating conditions, interface C-S conversion effect via Dirac surface state is evaluated as nearly constant large values of qICS, reflecting that the qICS is inversely proportional to the Fermi velocity vF that is almost constant. However, when EF traverses through the Dirac point, the qICS is remarkably suppressed possibly due to the degeneracy of surface spins or instability of helical spin structure. These results demonstrate that the fine tuning of the EF in TI based heterostructures is critical to maximizing the efficiency using the spin-momentum locking mechanism.
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Submitted 13 October, 2015;
originally announced October 2015.
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Fabrication of (111)-oriented Ca0.5Sr0.5IrO3/SrTiO3 superlattices; a designed playground for honeycomb physics
Authors:
Daigorou Hirai,
Jobu Matsuno,
Hidenori Takagi
Abstract:
We report the fabrication of (111)-oriented superlattice structures with alternating 2m-layers (m = 1, 2, and 3) of Ca0.5Sr0.5IrO3 perovskite and two layers of SrTiO3 perovskite on SrTiO3(111) substrates. In the case of m = 1 bilayer films, the Ir sub-lattice is a buckled honeycomb, where a topological state may be anticipated. The successful growth of superlattice structures on an atomic level al…
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We report the fabrication of (111)-oriented superlattice structures with alternating 2m-layers (m = 1, 2, and 3) of Ca0.5Sr0.5IrO3 perovskite and two layers of SrTiO3 perovskite on SrTiO3(111) substrates. In the case of m = 1 bilayer films, the Ir sub-lattice is a buckled honeycomb, where a topological state may be anticipated. The successful growth of superlattice structures on an atomic level along the [111] direction was clearly demonstrated by superlattice reflections in x-ray diffraction patterns and by atomically-resolved transmission electron microscope images. The ground states of the superlattice films were found to be magnetic insulators, which may suggest the importance of electron correlations in Ir perovskites in addition to the much discussed topological effects.
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Submitted 15 March, 2015;
originally announced March 2015.
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Semimetallic transport properties of epitaxially stabilized perovskite CaIrO3 films
Authors:
Daigorou Hirai,
Jobu Matsuno,
Hidenori Takagi
Abstract:
We report on the synthesis and transport properties of perovskite (Pv) CaIrO3 thin films. The Pv phase of CaIrO3 was stabilized by epitaxial growth on SrTiO3, (LaAlO3)0.3(Sr2AlTaO6)0.7, and LaAlO3 substrates with strong tensile, weak tensile, and compressive strains, respectively. The resistivity of these films showed a poorly metallic behavior. The Hall resistivity exhibited a sign change as a fu…
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We report on the synthesis and transport properties of perovskite (Pv) CaIrO3 thin films. The Pv phase of CaIrO3 was stabilized by epitaxial growth on SrTiO3, (LaAlO3)0.3(Sr2AlTaO6)0.7, and LaAlO3 substrates with strong tensile, weak tensile, and compressive strains, respectively. The resistivity of these films showed a poorly metallic behavior. The Hall resistivity exhibited a sign change as a function of temperature and a nonlinear magnetic-field dependence, which clearly indicated the coexistence of electrons and holes and hence supported that Pv CaIrO3 films are semimetallic. The observed robustness of the semimetallic ground state against tensile and compressive strains is consistent with the presence of symmetry-protected Dirac points (nodes) around the Fermi level that prohibits the system from becoming a band insulator.
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Submitted 7 January, 2015;
originally announced January 2015.
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Engineering spin-orbital magnetic insulator by tailoring superlattices
Authors:
Jobu Matsuno,
Kota Ihara,
Shugen Yamamura,
Hiroki Wadati,
Kenji Ishii,
V. Vijay Shankar,
Hae-Young Kee,
Hidenori Takagi
Abstract:
Novel interplay of spin-orbit coupling and electron correlations in complex Ir oxides recently emerged as a new paradigm for correlated electron physics. Because of a large spin-orbit coupling of ~0.5 eV, which is comparable to the transfer energy t and the crystal field splitting $Δ$ and Coulomb U, a variety of ground states including magnetic insulator, band insulator, semimetal and metal, shows…
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Novel interplay of spin-orbit coupling and electron correlations in complex Ir oxides recently emerged as a new paradigm for correlated electron physics. Because of a large spin-orbit coupling of ~0.5 eV, which is comparable to the transfer energy t and the crystal field splitting $Δ$ and Coulomb U, a variety of ground states including magnetic insulator, band insulator, semimetal and metal, shows up in a narrow materials phase space. Utilizing such subtle competition of the ground states, we successfully tailor a spin-orbital magnetic insulator out of a semimetal SrIrO$_3$ by controlling dimensionality using superlattice of [(SrIrO$_3$)$_m$, SrTiO$_3$] and show that a magnetic ordering triggers the transition to magnetic insulator. Those results can be described well by a first-principles calculation. This study is an important step towards the design and the realization of topological phases in complex Ir oxides with very strong spin-orbit coupling.
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Submitted 6 January, 2014;
originally announced January 2014.
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5d transition metal oxide IrO2 as a material for spin current detection
Authors:
Kohei Fujiwara,
Yasuhiro Fukuma,
Jobu Matsuno,
Hiroshi Idzuchi,
Yasuhiro Niimi,
YoshiChika Otani,
Hidenori Takagi
Abstract:
Devices based on a pure spin current (a flow of spin angular momentum) have been attracting increasing attention as key ingredients for low-dissipation electronics. To integrate such spintronics devices into charge-based technologies, an electric detection of spin current is essential. Inverse spin Hall effect converts a spin current into an electric voltage through spin-orbit coupling. Noble meta…
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Devices based on a pure spin current (a flow of spin angular momentum) have been attracting increasing attention as key ingredients for low-dissipation electronics. To integrate such spintronics devices into charge-based technologies, an electric detection of spin current is essential. Inverse spin Hall effect converts a spin current into an electric voltage through spin-orbit coupling. Noble metals such as Pt and Pd, and also Cu-based alloys, owing to the large direct spin Hall effect, have been regarded as potential materials for a spin-current injector. Those materials, however, are not promising as a spin-current detector based on inverse spin Hall effect. Their spin Hall resistivity rho_SH, representing the performance as a detector, is not large enough mainly due to their low charge resistivity. Here we demonstrate that heavy transition metal oxides can overcome such limitations inherent to metal-based spintronics materials. A binary 5d transition metal oxide IrO2, owing to its large resistivity as well as a large spin-orbit coupling associated with 5d character of conduction electrons, was found to show a gigantic rho_SH ~ 38 microohm cm at room temperature, one order of magnitude larger than those of noble metals and Cu-based alloys and even comparable to those of atomic layer thin film of W and Ta.
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Submitted 8 July, 2013;
originally announced July 2013.
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Two-dimensional Heisenberg behavior of Jeff = 1/2 isospins in the paramagnetic state of spin-orbital Mott insulator Sr2IrO4
Authors:
S. Fujiyama,
H. Ohsumi,
T. Komesu,
J. Matsuno,
B. J. Kim,
M. Takata,
T. Arima,
H. Takagi
Abstract:
Dynamical correlations of Jeff = 1/2 isospins in the paramagnetic state of spin-orbital Mott insu- lator Sr2IrO4 was revealed by resonant magnetic x-ray diffuse scattering. We found two-dimensional antiferromagnetic fluctuation with a large in-plane correlation length exceeding 100 lattice spacings at even 20 K above the mangnetic ordering temperature. In marked contrast to the naive expecta- tion…
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Dynamical correlations of Jeff = 1/2 isospins in the paramagnetic state of spin-orbital Mott insu- lator Sr2IrO4 was revealed by resonant magnetic x-ray diffuse scattering. We found two-dimensional antiferromagnetic fluctuation with a large in-plane correlation length exceeding 100 lattice spacings at even 20 K above the mangnetic ordering temperature. In marked contrast to the naive expecta- tion of strong magnetic anisotropy associated with an enhanced spin-orbit coupling, we discovered isotropic isospin correlation that is well described by the two-dimensional S = 1/2 quantum Heisen- berg model. The estimated antiferromagnetic coupling constant as large as J ~ 0.1 eV that is comparable to the small Mott gap (< 0.5 eV) points the weak and marginal Mott character of this spin-orbital entangled system.
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Submitted 8 March, 2012;
originally announced March 2012.
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Epitaxially stabilized iridium spinel oxide without cations in the tetrahedral site
Authors:
Hiromichi Kuriyama,
Jobu Matsuno,
Seiji Niitaka,
Masaya Uchida,
Daisuke Hashizume,
Aiko Nakao,
Kunihisa Sugimoto,
Hiroyuki Ohsumi,
Masaki Takata,
Hidenori Takagi
Abstract:
Single-crystalline thin film of an iridium dioxide polymorph Ir2O4 has been fabricated by the pulsed laser deposition of LixIr2O4 precursor and the subsequent Li-deintercalation using soft chemistry. Ir2O4 crystallizes in a spinel (AB2O4) without A cations in the tetrahedral site, which is isostructural to lambda-MnO2. Ir ions form a pyrochlore sublattice, which is known to give rise to a strong g…
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Single-crystalline thin film of an iridium dioxide polymorph Ir2O4 has been fabricated by the pulsed laser deposition of LixIr2O4 precursor and the subsequent Li-deintercalation using soft chemistry. Ir2O4 crystallizes in a spinel (AB2O4) without A cations in the tetrahedral site, which is isostructural to lambda-MnO2. Ir ions form a pyrochlore sublattice, which is known to give rise to a strong geometrical frustration. This Ir spinel was found to be a narrow gap insulator, in remarkable contrast to the metallic ground state of rutile-type IrO2. We argue that an interplay of strong spin-orbit coupling and a Coulomb repulsion gives rise to an insulating ground state as in a layered perovskite Sr2IrO4.
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Submitted 17 May, 2010;
originally announced May 2010.
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Anomalous metallic state in the vicinity of Metal to Valence Bond Solid insulator transition in LiVS2
Authors:
N. Katayama,
M. Uchida,
D. Hashizume,
S. Niitaka,
J. Matsuno,
D. Matsumura,
Y. Nishihata,
J. Mizuki,
N. Takeshita,
A. Gauzzi,
M. Nohara,
H. Takagi
Abstract:
We investigate LiVS2 and LiVSe2 with a triangular lattice as itinerant analogues of LiVO2, known for the formation of valence bond solid (VBS) state out of S = 1 frustrated magnet. LiVS2, which is located at the border between a metal and a correlated insulator, shows a first ordered transition from a paramagnetic metal to a VBS insulator at Tc ~ 305 K upon cooling. The presence of VBS state in…
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We investigate LiVS2 and LiVSe2 with a triangular lattice as itinerant analogues of LiVO2, known for the formation of valence bond solid (VBS) state out of S = 1 frustrated magnet. LiVS2, which is located at the border between a metal and a correlated insulator, shows a first ordered transition from a paramagnetic metal to a VBS insulator at Tc ~ 305 K upon cooling. The presence of VBS state in the close vicinity of insulator-metal transition may suggest the importance of itinerancy in the formation of VBS state. We argue that the high temperature metallic phase of LiVS2 has a pseudo-gap, likely originating from the VBS fluctuation. LiVSe2 was found to be a paramagnetic metal down to 2 K.
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Submitted 9 August, 2009;
originally announced August 2009.
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Sr$_2$(Ba$_2$)VO$_4$ under pressure -- an orbital switch and potential $d^1$ superconductor
Authors:
R. Arita,
A. Yamasaki,
K. Held,
J. Matsuno,
K. Kuroki
Abstract:
We study Sr$_2$(Ba$_2$)VO$_4$ under high pressure by means of the local density approximation + dynamical mean field theory method. While Sr$_2$VO$_4$ is a 1/6-filling three-band system at ambient pressure with a small level splitting between the $d_{xy}$- and $d_{yz/zx}$-bands, we show that an orbital polarization occurs under uniaxial pressure, resulting in dramatic changes of the magnetic, op…
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We study Sr$_2$(Ba$_2$)VO$_4$ under high pressure by means of the local density approximation + dynamical mean field theory method. While Sr$_2$VO$_4$ is a 1/6-filling three-band system at ambient pressure with a small level splitting between the $d_{xy}$- and $d_{yz/zx}$-bands, we show that an orbital polarization occurs under uniaxial pressure, resulting in dramatic changes of the magnetic, optical, and transport properties. When pressure is applied in the $c$-direction, a $d^1$ analog of $d^9$ cuprates is realized, making Sr$_2$(Ba$_2$)VO$_4$ a possible candidate for a $d^1$ superconductor. Experimentally, this uniaxial pressure can be realized by growing Ba$_2$VO$_4$ on a substrate with lattice constant 4.1-4.2 Å.
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Submitted 28 November, 2006;
originally announced November 2006.
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Different routes to charge disproportionation in perovskites-type Fe oxides
Authors:
J. Matsuno,
T. Mizokawa,
A. Fujimori,
Y. Takeda,
S. Kawasaki,
M. Takano
Abstract:
Iron perovskites CaFeO_3 and La_{0.33}Sr_{0.67}FeO_3 show charge disproportionation, resulting in charge-ordered states with Fe^{3+}:Fe^{5+} =1:1 and =2:1, respectively. We have made photoemission and unrestricted Hartree-Fock band-structure calculation of CaFeO_3 and compared it with La_{0.33}Sr_{0.67}FeO_3. With decreasing temperature, a gradual decrease of the spectral weight near the Fermi l…
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Iron perovskites CaFeO_3 and La_{0.33}Sr_{0.67}FeO_3 show charge disproportionation, resulting in charge-ordered states with Fe^{3+}:Fe^{5+} =1:1 and =2:1, respectively. We have made photoemission and unrestricted Hartree-Fock band-structure calculation of CaFeO_3 and compared it with La_{0.33}Sr_{0.67}FeO_3. With decreasing temperature, a gradual decrease of the spectral weight near the Fermi level occurred in CaFeO_3 as in La_{0.33}Sr_{0.67}FeO_3 although lattice distortion occurs only in CaFeO_3. Hartree-Fock calculations have indicated that both the breathing and tilting distortions are necessary to induce the charge disproportionation in CaFeO_3, while no lattice distortion is necessary for the charge disproportionation in La_{0.33}Sr_{0.67}FeO_3.
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Submitted 10 July, 2002;
originally announced July 2002.
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Chemical potential shift in La(1-x)Sr(x)MnO(3): Photoemission test of the phase separation scenario
Authors:
J. Matsuno,
A. Fujimori,
Y. Takeda,
M. Takano
Abstract:
We have studied the chemical potential shift in La(1-x)Sr(x)MnO(3) as a function of doped hole concentration by core-level x-ray photoemission. The shift is monotonous, which means that there is no electronic phase separation on a macroscopic scale, whereas it is consistent with the nano-meter scale cluster formation induced by chemical disorder. Comparison of the observed shift with the shift d…
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We have studied the chemical potential shift in La(1-x)Sr(x)MnO(3) as a function of doped hole concentration by core-level x-ray photoemission. The shift is monotonous, which means that there is no electronic phase separation on a macroscopic scale, whereas it is consistent with the nano-meter scale cluster formation induced by chemical disorder. Comparison of the observed shift with the shift deduced from the electronic specific heat indicates that hole do** in La(1-x)Sr(x)MnO(3) is well described by the rigid-band picture. In particular no mass enhancement toward the metal-insulator boundary was implied by the chemical potential shift, consistent with the electronic specific heat data.
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Submitted 22 April, 2002;
originally announced April 2002.
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Chemical Potential Shift in Nd$_{2-x}$Ce$_{x}$CuO$_{4}$: Contrasting Behaviors of the Electron- and Hole-Doped Cuprates
Authors:
N. Harima,
J. Matsuno,
A. Fujimori,
Y. Onose,
Y. Taguchi,
Y. Tokura
Abstract:
We have studied the chemical potential shift in the electron-doped superconductor Nd$_{2-x}$Ce$_{x}$CuO$_{4}$ by precise measurements of core-level photoemission spectra. The result shows that the chemical potential monotonously increases with electron do**, quite differently from La$_{2-x}$Sr$_{x}$CuO$_{4}$, where the shift is suppressed in the underdoped region.
If the suppression of the sh…
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We have studied the chemical potential shift in the electron-doped superconductor Nd$_{2-x}$Ce$_{x}$CuO$_{4}$ by precise measurements of core-level photoemission spectra. The result shows that the chemical potential monotonously increases with electron do**, quite differently from La$_{2-x}$Sr$_{x}$CuO$_{4}$, where the shift is suppressed in the underdoped region.
If the suppression of the shift in La$_{2-x}$Sr$_{x}$CuO$_{4}$ is attributed to strong stripe fluctuations, the monotonous increase of the chemical potential is consistent with the absence of stripe fluctuations in Nd$_{2-x}$Ce$_{x}$CuO$_{4}$. The chemical potential jump between Nd$_{2}$CuO$_{4}$ and La$_{2}$CuO$_{4}$ is found to be much smaller than the optical band gaps.
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Submitted 26 March, 2001;
originally announced March 2001.
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Electronic structure of spinel-type LiV_2O_4
Authors:
J. Matsuno,
A. Fujimori,
L. F. Mattheiss
Abstract:
The band structure of the cubic spinel compound LiV_2O_4, which has been reported recently to show heavy Fermion behavior, has been calculated within the local-density approximation using a full-potential version of the linear augmented-plane-wave method. The results show that partially-filled V 3d bands are located about 1.9 eV above the O 2p bands and the V 3d bands are split into a lower part…
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The band structure of the cubic spinel compound LiV_2O_4, which has been reported recently to show heavy Fermion behavior, has been calculated within the local-density approximation using a full-potential version of the linear augmented-plane-wave method. The results show that partially-filled V 3d bands are located about 1.9 eV above the O 2p bands and the V 3d bands are split into a lower partially-filled t_{2g} complex and an upper unoccupied e_{g} manifold. The fact that the conduction electrons originate solely from the t_{2g} bands suggests that the mechanism for the mass enhancement in this system is different from that in the 4f heavy Fermion systems, where these effects are attributed to the hybridization between the localized 4f levels and itinerant spd bands.
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Submitted 1 April, 1999;
originally announced April 1999.
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Do** Dependence of the Electronic Structure of Ba_{1-x}K_{x}BiO_{3} Studied by X-Ray Absorption Spectroscopy
Authors:
K. Kobayashi,
T. Mizokawa,
A. Ino,
J. Matsuno,
A. Fujimori,
H. Samata,
A. Mishiro,
Y. Nagata,
F. M. F. de Groot
Abstract:
We have performed x-ray absorption spectroscopy (XAS) and x-ray photoemission spectroscopy (XPS) studies of single crystal Ba_{1-x}K_{x}BiO_{3} (BKBO) covering the whole composition range $0 \leq x \leq 0.60$. Several features in the oxygen 1\textit{s} core XAS spectra show systematic changes with $x$. Spectral weight around the absorption threshold increases with hole do** and shows a finite…
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We have performed x-ray absorption spectroscopy (XAS) and x-ray photoemission spectroscopy (XPS) studies of single crystal Ba_{1-x}K_{x}BiO_{3} (BKBO) covering the whole composition range $0 \leq x \leq 0.60$. Several features in the oxygen 1\textit{s} core XAS spectra show systematic changes with $x$. Spectral weight around the absorption threshold increases with hole do** and shows a finite jump between $x=0.30$ and 0.40, which signals the metal-insulator transition. We have compared the obtained results with band-structure calculations. Comparison with the XAS results of BaPb_{1-x}Bi_{x}O_{3} has revealed quite different do** dependences between BKBO and BPBO. We have also observed systematic core-level shifts in the XPS spectra as well as in the XAS threshold as functions of $x$, which can be attributed to a chemical potential shift accompanying the hole do**. The observed chemical potential shift is found to be slower than that predicted by the rigid band model based on the band-structure calculations.
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Submitted 17 March, 1999;
originally announced March 1999.
