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Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures
Authors:
N. Fang,
Y. R. Chang,
S. Fujii,
D. Yamashita,
M. Maruyama,
Y. Gao,
C. F. Fong,
D. Kozawa,
K. Otsuka,
K. Nagashio,
S. Okada,
Y. K. Kato
Abstract:
The development of van der Waals heterostructures has introduced unconventional phenomena that emerge at atomically precise interfaces. For example, interlayer excitons in two-dimensional transition metal dichalcogenides show intriguing optical properties at low temperatures. Here we report on room-temperature observation of interface excitons in mixed-dimensional heterostructures consisting of tw…
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The development of van der Waals heterostructures has introduced unconventional phenomena that emerge at atomically precise interfaces. For example, interlayer excitons in two-dimensional transition metal dichalcogenides show intriguing optical properties at low temperatures. Here we report on room-temperature observation of interface excitons in mixed-dimensional heterostructures consisting of two-dimensional tungsten diselenide and one-dimensional carbon nanotubes. Bright emission peaks originating from the interface are identified, spanning a broad energy range within the telecommunication wavelengths. The effect of band alignment is investigated by systematically varying the nanotube bandgap, and we assign the new peaks to interface excitons as they only appear in type-II heterostructures. Room-temperature localization of low-energy interface excitons is indicated by extended lifetimes as well as small excitation saturation powers, and photon correlation measurements confirm single-photon emission. With mixed-dimensional van der Waals heterostructures where band alignment can be engineered, new opportunities for quantum photonics are envisioned.
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Submitted 28 July, 2023;
originally announced July 2023.
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Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes
Authors:
N. Fang,
D. Yamashita,
S. Fujii,
M. Maruyama,
Y. Gao,
Y. R. Chang,
C. F. Fong,
K. Otsuka,
K. Nagashio,
S. Okada,
Y. K. Kato
Abstract:
Nanomaterials exhibit unique optical phenomena, in particular excitonic quantum processes occurring at room temperature. The low dimensionality, however, imposes strict requirements for conventional optical excitation, and an approach for bypassing such restrictions is desirable. Here we report on exciton transfer in carbon-nanotube/tungsten-diselenide heterostructures, where band alignment can be…
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Nanomaterials exhibit unique optical phenomena, in particular excitonic quantum processes occurring at room temperature. The low dimensionality, however, imposes strict requirements for conventional optical excitation, and an approach for bypassing such restrictions is desirable. Here we report on exciton transfer in carbon-nanotube/tungsten-diselenide heterostructures, where band alignment can be systematically varied. The mixed-dimensional heterostructures display a pronounced exciton reservoir effect where the longer-lifetime excitons within the two-dimensional semiconductor are funneled into carbon nanotubes through diffusion. This new excitation pathway presents several advantages, including larger absorption areas, broadband spectral response, and polarization-independent efficiency. When band alignment is resonant, we observe substantially more efficient excitation via tungsten diselenide compared to direct excitation of the nanotube. We further demonstrate simultaneous bright emission from an array of carbon nanotubes with varied chiralities and orientations. Our findings show the potential of mixed-dimensional heterostructures and band alignment engineering for energy harvesting and quantum applications through exciton manipulation.
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Submitted 13 July, 2023;
originally announced July 2023.
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Unconventional gapless semiconductor in an extended martini lattice in covalent honeycomb materials
Authors:
Tomonari Mizoguchi,
Yanlin Gao,
Mina Maruyama,
Yasuhiro Hatsugai,
Susumu Okada
Abstract:
We study characteristic electronic structures in an extended martini lattice model and propose its materialization in $π$-electron networks constructed by designated chemisorption on graphene and silicene. By investigating the minimal tight-binding model, we reveal rich electronic structures tuned by the ratio of hop** parameters, ranging from the band insulator to the unconventional gapless sem…
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We study characteristic electronic structures in an extended martini lattice model and propose its materialization in $π$-electron networks constructed by designated chemisorption on graphene and silicene. By investigating the minimal tight-binding model, we reveal rich electronic structures tuned by the ratio of hop** parameters, ranging from the band insulator to the unconventional gapless semiconductor. Remarkably, the unconventional gapless semiconductor is characterized by a flat band at the Fermi level. Further, the density functional theory calculations for candidate materials reveal that the characteristic electronic structures can be realized by designated chemisorption or chemical substitution on graphene and silicene, and that the electronic structure near the Fermi level is tunable by the choice of the atomic species of adsorbed atoms. Our results open the way to search exotic electronic structures and their functionalities induced by an extended martini lattice.
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Submitted 15 March, 2023; v1 submitted 1 September, 2022;
originally announced September 2022.
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Two-dimensional atomic-scale ultrathin lateral heterostructures
Authors:
Nanami Ichinose,
Mina Maruyama,
Takato Hotta,
Zheng Liu,
Ruben Canton-Vitoria,
Susumu Okada,
Fanyu Zeng,
Feng Zhang,
Takashi Taniguchi,
Kenji Watanabe,
Ryo Kitaura
Abstract:
Ultrathin lateral heterostructures of monolayer MoS2 and WS2 have successfully been realized with the metal-organic chemical vapor deposition method. Atomic-resolution HAADF-STEM observations have revealed that the junction widths of lateral heterostructures range from several nanometers to single-atom thickness, the thinnest heterojunction in theory. The interfaces are atomically flat with minima…
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Ultrathin lateral heterostructures of monolayer MoS2 and WS2 have successfully been realized with the metal-organic chemical vapor deposition method. Atomic-resolution HAADF-STEM observations have revealed that the junction widths of lateral heterostructures range from several nanometers to single-atom thickness, the thinnest heterojunction in theory. The interfaces are atomically flat with minimal mixing between MoS2 and WS2, originating from rapid and abrupt switching of the source supply. Due to one-dimensional interfaces and broken rotational symmetry, the resulting ultrathin lateral heterostructures, 1~2 mixed-dimensional structures, can show emergent optical/electronic properties. The MOCVD growth developed in this work allows us to access various ultrathin lateral heterostructures, leading to future exploration of their emergent properties absent in each component alone.
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Submitted 4 October, 2022; v1 submitted 26 August, 2022;
originally announced August 2022.
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A Versatile Post-Do** Towards Two-Dimensional Semiconductors
Authors:
Y. Murai,
S. Zhang,
T. Hotta,
Z. Liu,
Y. Miyata,
T. Irisawa,
Y. Gao,
M. Maruyama,
S. Okada,
H. Mogi,
T. Sato,
S. Yoshida,
H. Shigekawa,
Takashi Taniguchi,
Kenji Watanabe,
R. Kitaura
Abstract:
We have developed a simple and straightforward way to realize controlled post-do** towards 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic energy dopant beams and a high-flux chalcogen beam at the same time, leading to substitutional do** with controlled dopant densities. Atomic-resolution transmission electron microscopy has revealed that dopant atoms injected t…
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We have developed a simple and straightforward way to realize controlled post-do** towards 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic energy dopant beams and a high-flux chalcogen beam at the same time, leading to substitutional do** with controlled dopant densities. Atomic-resolution transmission electron microscopy has revealed that dopant atoms injected toward TMDs are incorporated substitutionally into the hexagonal framework of TMDs. Electronic properties of doped TMDs (Nb-doped WSe2) have shown drastic change, p-type action with more than two orders of magnitude increase in on current. Position-selective do** has also been demonstrated by the post-do** toward TMDs with a patterned mask on the surface. The post-do** method developed in this work can be a versatile tool for 2D-based next-generation electronics in the future.
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Submitted 19 May, 2021; v1 submitted 7 May, 2021;
originally announced May 2021.
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Photoluminescence from Single-Walled MoS$_2$ Nanotubes Coaxially Grown on Boron Nitride Nanotubes
Authors:
Ming Liu,
Kaoru Hisama,
Yongjia Zheng,
Mina Maruyama,
Seungju Seo,
Anton Anisimov,
Taiki Inoue,
Esko I. Kauppinen,
Susumu Okada,
Shohei Chiashi,
Rong Xiang,
Shigeo Maruyama
Abstract:
Single- and multi-walled molybdenum disulfide (MoS$_2$) nanotubes have been coaxially grown on small diameter boron nitride nanotubes (BNNTs) which were synthesized from heteronanotubes by removing single-walled carbon nanotubes (SWCNTs), and systematically investigated by optical spectroscopy. The strong photoluminescence (PL) from single-walled MoS$_2$ nanotubes supported by core BNNTs is observ…
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Single- and multi-walled molybdenum disulfide (MoS$_2$) nanotubes have been coaxially grown on small diameter boron nitride nanotubes (BNNTs) which were synthesized from heteronanotubes by removing single-walled carbon nanotubes (SWCNTs), and systematically investigated by optical spectroscopy. The strong photoluminescence (PL) from single-walled MoS$_2$ nanotubes supported by core BNNTs is observed in this work, which evidences a direct band gap structure for single-walled MoS$_2$ nanotubes with around 6 - 7 nm in diameter. The observation is consistent with our DFT results that the single-walled MoS$_2$ nanotube changes from an indirect-gap to a direct-gap semiconductor when the diameter of a nanotube is more than around 5 nm. On the other hand, when there are SWCNTs inside the heteronanotubes of BNNTs and MoS$_2$ nanotubes, the PL signal is considerably quenched. The charge transfer and energy transfer between SWCNTs and single-walled MoS$_2$ nanotubes were examined through characterizations by PL, XPS, and Raman spectroscopy. Unlike the single-walled MoS$_2$ nanotubes, multi-walled MoS$_2$ nanotubes do not emit light. Single- and multi-walled MoS$_2$ nanotubes exhibit different Raman features in both resonant and non-resonant Raman spectra. The method of assembling heteronanotubes using BNNTs as templates provides an efficient approach for exploring the electronic and optical properties of other transition metal dichalcogenide nanotubes.
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Submitted 18 December, 2020;
originally announced December 2020.
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Indirect-to-direct band gap crossover of single walled MoS$_2$ nanotubes
Authors:
Kaoru Hisama,
Mina Maruyama,
Shohei Chiashi,
Shigeo Maruyama,
Susumu Okada
Abstract:
Using density functional theory, the electronic structures of single walled molybdenum disulfide nanotubes (MoS$_2$ NTs) were investigated as a function of diameter. Our calculations show that the electronic structure near the band gap is sensitive to the NT diameter: armchair MoS$_2$ NTs act as indirect gap semiconductors for diameters up to approximately 5.0 nm, while armchair MoS$_2$ NTs with l…
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Using density functional theory, the electronic structures of single walled molybdenum disulfide nanotubes (MoS$_2$ NTs) were investigated as a function of diameter. Our calculations show that the electronic structure near the band gap is sensitive to the NT diameter: armchair MoS$_2$ NTs act as indirect gap semiconductors for diameters up to approximately 5.0 nm, while armchair MoS$_2$ NTs with larger diameters act as direct gap semiconductors with band edges located in the vicinity of $k = 2π/3$. This finding implies that MoS$_2$ NTs with large diameters should exhibit similar photoluminescence to 2D monolayer MoS$_2$ sheets. This indirect-to-direct band gap crossover is ascribed to the upward shift of the valence band peak at the $Γ$ point in small diameter NTs, which is caused by the tensile strain resulting from their tubular structures.
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Submitted 18 November, 2020;
originally announced November 2020.
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Microscopic mechanism of van der Waals heteroepitaxy in the formation of MoS2/hBN vertical heterostructures
Authors:
Mitsuhiro Okada,
Mina Maruyama,
Susumu Okada,
Jamie H. Warner,
Yusuke Kureishi,
Yosuke Uchiyama,
Takashi Taniguchi,
Kenji Watanabe,
Tetsuo Shimizu,
Toshitaka Kubo,
Hisanori Shinohara,
Ryo Kitaura
Abstract:
Recent works have revealed that van der Waals (vdW) epitaxial growth of 2D materials on crystalline substrates, such as hexagonal boron nitride (hBN), leads to formation of self-aligned grains, which results in defect-free stitching between the grains. However, how the weak vdW interaction causes strong limitation on orientation of grains is still not understood yet. In this work, we have focused…
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Recent works have revealed that van der Waals (vdW) epitaxial growth of 2D materials on crystalline substrates, such as hexagonal boron nitride (hBN), leads to formation of self-aligned grains, which results in defect-free stitching between the grains. However, how the weak vdW interaction causes strong limitation on orientation of grains is still not understood yet. In this work, we have focused on investigation of mechanism of self-alignment of MoS2 grains in vdW epitaxial growth on hBN. Through calculation based on density functional theory and the Lennard-Jones potential, we found that interaction energy between MoS2 and hBN strongly depends both on size and orientation of MoS2. We also found that, when size of MoS2 is ca. 40 nm, rotational energy barrier can exceed ~ 1 eV, which should suppress rotation to limit orientation of MoS2 even at growth temperature.
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Submitted 5 May, 2020; v1 submitted 27 April, 2020;
originally announced April 2020.
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Momentum selective optical absorption in triptycene molecular membrane
Authors:
Masashi Akita,
Yasumaru Fujii,
Mina Maruyama,
Susumu Okada,
Katsunori Wakabayashi
Abstract:
The optical properties of triptycene molecular membranes (TMMs) under the linearly and circularly polarized light irradiation have been theoretically studied. Since TMMs have the double-layered Kagome lattice structures for their $π$-electrons, i.e., tiling of trigonal and hexagonal-symmetric rings, the electronic band structures of TMMs have non-equivalent Dirac cones and perfect flat bands. By c…
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The optical properties of triptycene molecular membranes (TMMs) under the linearly and circularly polarized light irradiation have been theoretically studied. Since TMMs have the double-layered Kagome lattice structures for their $π$-electrons, i.e., tiling of trigonal and hexagonal-symmetric rings, the electronic band structures of TMMs have non-equivalent Dirac cones and perfect flat bands. By constructing the tight-binding model to describe the pi-electronic states of TMMs, we have evaluated the optical absorption intensities and valley selective excitation of TMMs based on the Kubo formula. It is found that absorption intensities crucially depend on both light polarization angle and the excitation position in momentum space, i.e., the momentum and valley selective optical excitation. The polarization dependence and optical selection rules are also clarified by using group theoretical analyses.
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Submitted 8 February, 2020;
originally announced February 2020.
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Flat bands and higher-order topology in polymerized triptycene: Tight-binding analysis on decorated star lattices
Authors:
Tomonari Mizoguchi,
Mina Maruyama,
Susumu Okada,
Yasuhiro Hatsugai
Abstract:
In a class of carbon-based materials called polymerized triptycene, which consist of triptycene molecules and phenyls, exotic electronic structures such as Dirac cones and flat bands arise from the kagome-type network. In this paper, we theoretically investigate the tight-binding models for polymerized triptycene, focusing on the origin of flat bands and the topological properties. The mechanism o…
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In a class of carbon-based materials called polymerized triptycene, which consist of triptycene molecules and phenyls, exotic electronic structures such as Dirac cones and flat bands arise from the kagome-type network. In this paper, we theoretically investigate the tight-binding models for polymerized triptycene, focusing on the origin of flat bands and the topological properties. The mechanism of the existence of the flat bands is elucidated by using the "molecular-orbital" representation, which we have developed in the prior works. Further, we propose that the present material is a promising candidate to realize the two-dimensional second-order topological insulator, which is characterized by the boundary states localized at the corners of the sample. To be concrete, we propose two methods to realize the second-order topological insulator, and elucidate the topological properties of the corresponding models by calculating the corner states as well as the bulk topological invariant, namely the $\mathbb{Z}_3$ Berry phase.
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Submitted 25 November, 2019; v1 submitted 13 July, 2019;
originally announced July 2019.
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Enhancement of Critical Slowing Down in Chiral Phase Transition -- Langevin Dynamics Approach --
Authors:
T. Koide,
M. Maruyama
Abstract:
We derive the linear Langevin equation that describes the behavior of the fluctuations of the order parameter of the chiral phase transition above the critical temperature by applying the projection operator method to the Nambu-Jona-Lasinio model at finite temperature and density. The Langevin equation relaxes exhibiting oscillation, reveals thermalization and converges to the equilibrium state…
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We derive the linear Langevin equation that describes the behavior of the fluctuations of the order parameter of the chiral phase transition above the critical temperature by applying the projection operator method to the Nambu-Jona-Lasinio model at finite temperature and density. The Langevin equation relaxes exhibiting oscillation, reveals thermalization and converges to the equilibrium state consistent with the mean-field approximation as time goes on. With the help of this Langevin equation, we further investigate the relaxation of the critical fluctuations. The relaxation time of the critical fluctuations increases at speed as the temperature approaches toward the critical temperature because of the critical slowing down. The critical slowing down is enhanced as the chemical potential increases because of the Pauli blocking. Furthermore, we find another enhancement of the critical slowing down around the tricritical point.
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Submitted 21 June, 2004; v1 submitted 16 April, 2004;
originally announced April 2004.
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Linear Langevin Equation of Critical Fluctuation in Chiral Phase Transition
Authors:
T. Koide,
M. Maruyama
Abstract:
We derive the linear Langevin equation that describes the behavior of critical fluctuation above the critical temperature of the chiral phase transition in the Nambu-Jona-Lasinio model. The Langevin equation relaxes exhibiting oscillation and shows thermalization. The relaxation becomes slower as the system approaches the critical point(the critical slowing down). The time correlation function a…
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We derive the linear Langevin equation that describes the behavior of critical fluctuation above the critical temperature of the chiral phase transition in the Nambu-Jona-Lasinio model. The Langevin equation relaxes exhibiting oscillation and shows thermalization. The relaxation becomes slower as the system approaches the critical point(the critical slowing down). The time correlation function also calculated using the Langevin equation shows that there exists the same soft mode as the previous calculation in the linear response theory.
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Submitted 8 August, 2003;
originally announced August 2003.
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Magnetic nanographite
Authors:
Koichi Kusakabe,
Masanori Maruyama
Abstract:
Hydrogenated nanographite can display spontaneous magnetism. Recently we proposed that hydrogenation of nanographite is able to induce finite magnetization. We have performed theoretical investigation of a graphene ribbon in which each carbon is bonded to two hydrogen atoms at one edge and to a single hydrogen atom at another edge. Application of the local-spin-density approximation to the calcu…
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Hydrogenated nanographite can display spontaneous magnetism. Recently we proposed that hydrogenation of nanographite is able to induce finite magnetization. We have performed theoretical investigation of a graphene ribbon in which each carbon is bonded to two hydrogen atoms at one edge and to a single hydrogen atom at another edge. Application of the local-spin-density approximation to the calculation of the electronic band-structure of the ribbon shows appearance of a spin-polarized flat band at the Fermi energy. Producing different numbers of mono-hydrogenated carbons and di-hydrogenated carbons can create magnetic moments in nanographite.
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Submitted 17 December, 2002;
originally announced December 2002.
