Showing 1–50 of 143 results for author: Marie, X

Efficient Electron Spin Relaxation by Chiral Phonons in WSe$_2$ Monolayers

Authors: D. Lagarde, M. Glazov, V. **dal, K. Mourzidis, Iann Gerber, A. Balocchi, L. Lombez, P. Renucci, T. Taniguchi, K. Watanabe, C. Robert, X. Marie

Abstract: In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a consequence, for electrons occupying bottom conduction bands, a carrier spin flip occurs only if there is a simultaneous change of valley. However, very little is… ▽ More In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a consequence, for electrons occupying bottom conduction bands, a carrier spin flip occurs only if there is a simultaneous change of valley. However, very little is known about the intra-valley spin relaxation processes. In this work we have performed stationary and time-resolved photoluminescence measurements in high quality WSe$_2$ monolayers. Our experiments highlight an efficient relaxation from bright to dark excitons, due to a fast intra-valley electron transfer from the top to the bottom conduction band with opposite spins. A combination of experiments and theoretical analysis allows us to infer a spin relaxation time of about $τ_s\sim10~$ps, driven by the interplay between $Γ$-valley chiral phonons and spin-orbit mixing. △ Less

Submitted 9 July, 2024; originally announced July 2024.

Comments: 10 pages, 4 figures

Brightened emission of dark trions in transition-metal dichalcogenide monolayers

Authors: V. **dal, K. Mourzidis, A. Balocchi, C. Robert, P. Li, D. Van Tuan, L. Lombez, D. Lagarde, P. Renucci, T. Taniguchi, K. Watanabe, H. Dery, X. Marie

Abstract: The optical emission spectra of semiconducting transition-metal dichalcogenide monolayers highlight fascinating recombination processes of charged excitons (trions). When charge tunable WSe2 monolayers are moderately doped with electrons, a strong luminescence peak emerges just below the well-understood spectral lines associated with the recombination of negatively charged bright and dark trions.… ▽ More The optical emission spectra of semiconducting transition-metal dichalcogenide monolayers highlight fascinating recombination processes of charged excitons (trions). When charge tunable WSe2 monolayers are moderately doped with electrons, a strong luminescence peak emerges just below the well-understood spectral lines associated with the recombination of negatively charged bright and dark trions. Despite previous investigations, its origin remains elusive. Here, we demonstrate that this luminescence peak is the result of electron-electron assisted recombination that brightens the dark trion emission. Supporting evidence for this second-order recombination process comes from identifying the equivalent brightened emission of positively charged dark trions when the monolayer is electrostatically doped with holes. Remarkably, the discovered hole-hole assisted luminescence peak emerges in the near infrared, about 500 meV below the well-studied spectral region of excitons and trions. In addition to identifying new recombination channels of these excitonic complexes, our findings accurately determine the spin-split energies of the conduction and valence bands. Both of which play crucial roles in understanding the optical properties of WSe2 based homo- and hetero-structures. △ Less

Submitted 4 June, 2024; originally announced June 2024.

Comments: 13 pages, 4 figures

Exciton self-trap** in twisted hexagonal boron nitride homostructures

Authors: Sébastien Roux, Christophe Arnold, Etienne Carré, Alexandre Plaud, Lei Ren, Eli Janzen, James H. Edgar, Camille Maestre, Bérangère Toury, Catherine Journet, Vincent Garnier, Philippe Steyer, Takashi Taniguchi, Kenji Watanabe, Cédric Robert, Xavier Marie, Annick Loiseau, Julien Barjon

Abstract: One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence (CL) and time-resolved CL experiments to study how excitons interact with the interface between… ▽ More One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence (CL) and time-resolved CL experiments to study how excitons interact with the interface between two twisted hexagonal boron nitride (hBN) crystals with various angles. An efficient capture of free excitons by the interface is demonstrated, which leads to a population of long lived and interface-localized (2D) excitons. Temperature dependent experiments indicate that for high twist angles, these excitons localized at the interface further undergo a self-trap**. It consists in a distortion of the lattice around the exciton on which the exciton traps itself. Our results suggest that this exciton-interface interaction causes a broad optical emission of highly twisted hBN-hBN structures around 300 nm (4 eV). Exciton self-trap** is finally discussed as a common feature of sp2 hybridized boron nitride polytypes and nanostructures due to the ionic nature of the B-N bond and their compact excitons. △ Less

Submitted 15 May, 2024; originally announced May 2024.

Comments: 15 pages, 13 figures

Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride

Authors: T. Clua-Provost, Z. Mu, A. Durand, C. Schrader, J. Happacher, J. Bocquel, P. Maletinsky, J. Fraunié, X. Marie, C. Robert, G. Seine, E. Janzen, J. H. Edgar, B. Gil, G. Cassabois, V. Jacques

Abstract: The negatively-charged boron vacancy (V$_\text{B}^-$) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) quantum sensing units. Such developments require a precise understanding of the spin-dependent optical response of V$_\text{B}^-$ centers, which still remains poorly documented despite its key role for sensing application… ▽ More The negatively-charged boron vacancy (V$_\text{B}^-$) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) quantum sensing units. Such developments require a precise understanding of the spin-dependent optical response of V$_\text{B}^-$ centers, which still remains poorly documented despite its key role for sensing applications. Here we investigate the spin-dependent photodynamics of V$_\text{B}^-$ centers in hBN by a series of time-resolved photoluminescence (PL) measurements. We first introduce a robust all-optical method to infer the spin-dependent lifetime of the excited states and the electron spin polarization of V$_\text{B}^-$ centers under optical pum**. Using these results, we then analyze PL time traces recorded at different optical excitation powers with a seven-level model of the V$_\text{B}^-$ center and we extract all the rates involved in the spin-dependent optical cycles, both under ambient conditions and at liquid helium temperature. These findings are finally used to study the impact of a vector magnetic field on the optical response. More precisely, we analyze PL quenching effects resulting from electron spin mixing induced by the magnetic field component perpendicular to the V$_\text{B}^-$ quantization axis. All experimental results are well reproduced by the seven-level model, illustrating its robustness to describe the spin-dependent photodymanics of V$_\text{B}^-$ centers. This work provides important insights into the properties of V$_\text{B}^-$ centers in hBN, which are valuable for future developments of 2D quantum sensing units. △ Less

Submitted 22 April, 2024; originally announced April 2024.

Comments: 11 pages, 9 figures

Large-scale characterization of Cu2O monocrystals via Rydberg excitons

Authors: Kerwan Morin, Delphine Lagarde, Angélique Gillet, Xavier Marie, Thomas Boulier

Abstract: Rydberg states of excitons can reach microns in size and require extremely pure crystals. We introduce an experimental method for the rapid and spatially-resolved characterization of Rydberg excitons in copper oxide (Cu2O) with sub-micron resolution over large zones. Our approach involves illuminating and imaging the entire sample on a camera to realize a spatially-resolved version of resonant abs… ▽ More Rydberg states of excitons can reach microns in size and require extremely pure crystals. We introduce an experimental method for the rapid and spatially-resolved characterization of Rydberg excitons in copper oxide (Cu2O) with sub-micron resolution over large zones. Our approach involves illuminating and imaging the entire sample on a camera to realize a spatially-resolved version of resonant absorption spectroscopy, without any mobile part. This yields spatial maps of Rydberg exciton properties, including their energy, linewidth and peak absorption, providing a comprehensive quality assessment of the entire sample in a single shot. Furthermore, by imaging the sample photoluminescence over the same zone, we establish a strong relationship between the spectral quality map and the photoluminescence map of charged oxygen vacancies. This results in an independent, luminescence-based quality map that closely matches the results obtained through resonant spectroscopy. Our findings reveal that Rydberg excitons in natural Cu2O crystals are predominantly influenced by optically-active charged oxygen vacancies, which can be easily mapped. Together, these two complementary methods provide valuable insights into Cu2O crystal properties. △ Less

Submitted 5 February, 2024; originally announced February 2024.

Comments: 8 pages, 6 figures

Biaxial strain tuning of exciton energy and polarization in monolayer WS2

Authors: G. Kourmoulakis, A. Michail, I. Paradisanos, X. Marie, M. M. Glazov, B. Jorissen, L. Covaci, E. Stratakis, K. Papagelis, J. Parthenios, G. Kioseoglou

Abstract: We perform micro-photoluminescence and Raman experiments to examine the impact of biaxial tensile strain on the optical properties of WS2 monolayers. A strong shift on the order of -130 meV per % of strain is observed in the neutral exciton emission at room temperature. Under near-resonant excitation we measure a monotonic decrease in the circular polarization degree under applied strain. We exper… ▽ More We perform micro-photoluminescence and Raman experiments to examine the impact of biaxial tensile strain on the optical properties of WS2 monolayers. A strong shift on the order of -130 meV per % of strain is observed in the neutral exciton emission at room temperature. Under near-resonant excitation we measure a monotonic decrease in the circular polarization degree under applied strain. We experimentally separate the effect of the strain-induced energy detuning and evaluate the pure effect coming from biaxial strain. The analysis shows that the suppression of the circular polarization degree under biaxial strain is related to an interplay of energy and polarization relaxation channels as well as to variations in the exciton oscillator strength affecting the long-range exchange interaction. △ Less

Submitted 24 July, 2023; originally announced July 2023.

Comments: 29 pages, 11 figures

Electron and hole do** of monolayer WSe2 induced by twisted ferroelectric hexagonal boron nitride

Authors: Jules Fraunié, Rayan Jamil, Richard Kantelberg, Sébastien Roux, Lionel Petit, Emmanuel Lepleux, Louis Pacheco, Kenji Watanabe, Takashi Taniguchi, Vincent Jacques, Laurent Lombez, Mikhail M. Glazov, Benjamin Lassagne, Xavier Marie, Cedric Robert

Abstract: For the past few years, 2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronics devices. The recent discovery of 2D ferroelectricity in twisted layers of insulating hexagonal boron nitride, one of the most used 2D materials, has opened the route to its integration into complex van der Waals heterostructures combining hybrid properties. Here we show t… ▽ More For the past few years, 2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronics devices. The recent discovery of 2D ferroelectricity in twisted layers of insulating hexagonal boron nitride, one of the most used 2D materials, has opened the route to its integration into complex van der Waals heterostructures combining hybrid properties. Here we show that opposite polarizations in ferroelectric domains of a folded hBN layer can imprint local n and p do** in a semiconducting transition metal dichalcogenide WSe2 monolayer. We demonstrate that WSe2 can be used as an optical probe of ferroelectricity in hBN and show that the do** density and type can be controlled with the position of the semiconductor with respect to the ferroelectric interface. Our results establish the ferroelectric hBN/WSe2 van der Waals stacking as a promising optoelectronic structure. △ Less

Submitted 6 December, 2023; v1 submitted 16 July, 2023; originally announced July 2023.

Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride

Authors: T. Clua-Provost, A. Durand, Z. Mu, T. Rastoin, J. Fraunié, E. Janzen, H. Schutte, J. H. Edgar, G. Seine, A. Claverie, X. Marie, C. Robert, B. Gil, G. Cassabois, V. Jacques

Abstract: We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V$_\text{B}^-$) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with $^{15}$N yields a simplified and well-resolved hyperfine structure of V$_\text{B}^-$ centers, while purification with $^{10}$B leads to narrower ESR linewidths. These results… ▽ More We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V$_\text{B}^-$) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with $^{15}$N yields a simplified and well-resolved hyperfine structure of V$_\text{B}^-$ centers, while purification with $^{10}$B leads to narrower ESR linewidths. These results establish isotopically-purified h$^{10}$B$^{15}$N crystals as the optimal host material for future use of V$_\text{B}^-$ spin defects in quantum technologies. Capitalizing on these findings, we then demonstrate optically-induced polarization of $^{15}$N nuclei in h$^{10}$B$^{15}$N, whose mechanism relies on electron-nuclear spin mixing in the V$_\text{B}^-$ ground state. This work opens up new prospects for future developments of spin-based quantum sensors and simulators on a two-dimensional material platform. △ Less

Submitted 13 July, 2023; originally announced July 2023.

Comments: 6 pages, 3 figure

Journal ref: Phys. Rev. Lett. 131, 126901 (2023)

Kapitza-resistance-like exciton dynamics in atomically flat MoSe$_{2}$-WSe$_{2}$ lateral heterojunction

Authors: Hassan Lamsaadi, Dorian Beret, Ioannis Paradisanos, Pierre Renucci, Delphine Lagarde, Xavier Marie, Bernhard Urbaszek, Ziyang Gan, Antony George, Kenji Watanabe, Takashi Taniguchi, Andrey Turchanin, Laurent Lombez, Nicolas Combe, Vincent Paillard, Jean-Marie Poumirol

Abstract: Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challe… ▽ More Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe$_{2}$-WSe$_{2}$) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a discontinuity of the exciton density distribution on each side of the interface. We introduce the concept of exciton Kapitza resistance, by analogy with the interfacial thermal resistance referred to as Kapitza resistance. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties can be controlled, over distances far greater than the junction width, by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices. △ Less

Submitted 23 June, 2023; originally announced June 2023.

Journal ref: Nature Communications volume 14, Article number: 5881 (2023)

Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layered graphene and nickel/gold films

Authors: R. Aristegui, P. Lefebvre, C. Brimont, T. Guillet, M. Vladimirova, I. Paradisanos, C. Robert, X. Marie, B. Urbaszek, S. Chenot, Y. Cordier, B. Damilano

Abstract: Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. This electric field, and thus exciton energy, can be reduced by depositing metallic layers on the sample surface. Using spatially-resolved micro-photoluminescence spectroscopy we compare the effects of two different mater… ▽ More Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. This electric field, and thus exciton energy, can be reduced by depositing metallic layers on the sample surface. Using spatially-resolved micro-photoluminescence spectroscopy we compare the effects of two different materials, Nickel/Gold (NiAu) and few-layered graphene (FLG), on the potential landscape experienced by the excitons. We are able to (i) determine the potential barriers imposed on QW excitons by deposition of FLG and NiAu to be $14$ and $82$~meV, respectively, and (ii) to evidence their impact on the exciton transport at appropriate densities. Optical losses and inhomogeneous broadening induced by deposition of NiAu and FLG layers are similar, and their joined implementation constitute a promising tool for electrostatic modulation of IX densities even in the absence of any applied electric bias. △ Less

Submitted 7 June, 2023; originally announced June 2023.

Optically-active spin defects in few-layer thick hexagonal boron nitride

Authors: A. Durand, T. Clua-Provost, F. Fabre, P. Kumar, J. Li, J. H. Edgar, P. Udvarhelyi, A. Gali, X. Marie, C. Robert, J. M. Gérard, B. Gil, G. Cassabois, V. Jacques

Abstract: Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed. In this work, we first demonstrate that the electron spin resonance frequencies of boron vacancy centres (V$_\text{B}^-$) can be detected optically in the limit of few-atomic-layer thick hBN flake… ▽ More Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed. In this work, we first demonstrate that the electron spin resonance frequencies of boron vacancy centres (V$_\text{B}^-$) can be detected optically in the limit of few-atomic-layer thick hBN flakes despite the nanoscale proximity of the crystal surface that often leads to a degradation of the stability of solid-state spin defects. We then analyze the variations of the electronic spin properties of V$_\text{B}^-$ centres with the hBN thickness with a focus on (i) the zero-field splitting parameters, (ii) the optically-induced spin polarization rate and (iii) the longitudinal spin relaxation time. This work provides important insights into the properties of V$_\text{B}^-$ centres embedded in ultrathin hBN flakes, which are valuable for future developments of foil-based quantum sensing technologies. △ Less

Submitted 9 May, 2023; v1 submitted 24 April, 2023; originally announced April 2023.

Comments: 7 pages, 3 figures

Journal ref: Phys. Rev. Lett. 131, 116902 (2023)

Control of the Bright-Dark Exciton Splitting using Lamb Shift in a 2D Semiconductor

Authors: L. Ren, C. Robert, M. M. Glazov, M. A. Semina, T. Amand, L. Lombez, D. Lagarde, T. Taniguchi, K. Watanabe, X. Marie

Abstract: We have investigated the exciton fine structure in atomically thin WSe2 -based van der Waals heterostructures where the density of optical modes at the location of the semiconductor monolayer can be tuned. The energy splitting $Δ$ between the bright and dark exciton has been measured by photoluminescence spectroscopy. We demonstrate that $Δ$ can be tuned by a few meV, as a result of a significant… ▽ More We have investigated the exciton fine structure in atomically thin WSe2 -based van der Waals heterostructures where the density of optical modes at the location of the semiconductor monolayer can be tuned. The energy splitting $Δ$ between the bright and dark exciton has been measured by photoluminescence spectroscopy. We demonstrate that $Δ$ can be tuned by a few meV, as a result of a significant Lamb shift of the optically active exciton which arises from emission and absorption of virtual photons triggered by the vacuum fluctuations of the electromagnetic field. We also measured strong variations of the bright exciton radiative linewidth, as a result of the Purcell effect. All these experimental results illustrate the strong sensitivity of the excitons to local vacuum field. We found a very good agreement with a model that demonstrates the equivalence, for our system, of a classical electrodynamical transfer matrix formalism and quantum-electrodynamical approach. The bright-dark splitting control demonstrated here should apply to any semiconductor structures. △ Less

Submitted 31 March, 2023; originally announced March 2023.

Stability of the In-Plane Room Temperature van der Waals Ferromagnet Chromium Ditelluride and Its Conversion to Chromium-Interleaved CrTe$_2$ Compounds

Authors: Anike Purbawati, Suman Sarkar, Sébastien Pairis, Marek Kostka, Abdellali Hadj-Azzem, Didier Dufeu, Priyank Singh, Daniel Bourgault, Manuel Nuñez-Regueiro, Jan Vogel, Julien Renard, Laëtitia Marty, Florentin Fabre, Aurore Finco, Vincent Jacques, Lei Ren, Vivekanand Tiwari, Cedric Robert, Xavier Marie, Nedjma Bendiab, Nicolas Rougemaille, Johann Coraux

Abstract: Van der Waals magnetic materials are building blocks for novel kinds of spintronic devices and playgrounds for exploring collective magnetic phenomena down to the two-dimensional limit. Chromium-tellurium compounds are relevant in this perspective. In particular, the 1$T$ phase of CrTe$_2$ has been argued to have a Curie temperature above 300~K, a rare and desirable property in the class of lamell… ▽ More Van der Waals magnetic materials are building blocks for novel kinds of spintronic devices and playgrounds for exploring collective magnetic phenomena down to the two-dimensional limit. Chromium-tellurium compounds are relevant in this perspective. In particular, the 1$T$ phase of CrTe$_2$ has been argued to have a Curie temperature above 300~K, a rare and desirable property in the class of lamellar materials, making it a candidate for practical applications. However, recent literature reveals a strong variability in the reported properties, including magnetic ones. Using electron microscopy, diffraction and spectroscopy techniques, together with local and macroscopic magnetometry approaches, our work sheds new light on the structural, chemical and magnetic properties of bulk 1$T$-CrTe$_2$ exfoliated in the form of flakes having a thickness ranging from few to several tens of nanometers. We unambiguously establish that 1$T$-CrTe$_2$ flakes are ferromagnetic above room temperature, have an in-plane easy axis of magnetization, low coercivity, and we confirm that their Raman spectroscopy signatures are two modes, $E_{2\text{g}}$ (103.5~cm$^{-1}$) and $A_{1\text{g}}$ (136.5~cm$^{-1}$). We also prove that thermal annealing causes a phase transformation to monoclinic Cr$_5$Te$_8$ and, to a lesser extent, to trigonal Cr$_5$Te$_8$. In sharp contrast with 1$T$-CrTe$_2$, none of these compounds have a Curie temperature above room temperature, and they both have perpendicular magnetic anisotropy. Our findings reconcile the apparently conflicting reports in the literature and open opportunities for phase-engineered magnetic properties. △ Less

Submitted 3 March, 2023; v1 submitted 22 January, 2023; originally announced January 2023.

Journal ref: ACS Applied Electronic Materials, 5, 764 (2023)

Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors

Authors: Ana Estrada-Real, Ioannis Paradisanos, Peter R. Wiecha, Jean-Marie Poumirol, Aurelien Cuche, Gonzague Agez, Delphine Lagarde, Xavier Marie, Vincent Larrey, Jonas Müller, Guilhem Larrieu, Vincent Paillard, Bernhard Urbaszek

Abstract: Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayers can be placed in the near-field region of such Mie resonators. Here, we experimentally demonstrate and verify by numerical simulations coupling betw… ▽ More Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayers can be placed in the near-field region of such Mie resonators. Here, we experimentally demonstrate and verify by numerical simulations coupling between a MoSe2 monolayer and the near-field of dielectric nanoresonators. Through a comparison of dark-field (DF) scattering spectroscopy and photoluminescence excitation experiments (PLE), we show that the MoSe2 absorption can be enhanced via the near-field of a nanoresonator. We demonstrate spectral tuning of the absorption via the geometry of individual Mie resonators. We show that we indeed access the optical near-field of the nanoresonators, by measuring a spectral shift between the typical near-field resonances in PLE compared to the far-field resonances in DF scattering. Our results prove that using MoSe2 as an active probe allows accessing the optical near-field above photonic nanostructures, without the requirement of highly complex near-field microscopy equipment. △ Less

Submitted 25 October, 2022; originally announced October 2022.

Comments: Main paper and supplement

Journal ref: Communication Physics 6, 102 (2023)

Non-linear diffusion of negatively charged excitons in WSe2 monolayer

Authors: D. Beret, L. Ren, C. Robert, L. Foussat, P. Renucci, D. Lagarde, A. Balocchi, T. Amand, B. Urbaszek, K. Watanabe, T. Taniguchi, X. Marie, L. Lombez

Abstract: We investigate the diffusion process of negatively charged excitons (trions) in WSe2 transition metal dichalcogenide monolayer. We measure time-resolved photoluminescence spatial profiles of these excitonic complexes which exhibit a non-linear diffusion process with an effective negative diffusion behavior. Specifically, we examine the dynamics of the two negatively charged bright excitons (interv… ▽ More We investigate the diffusion process of negatively charged excitons (trions) in WSe2 transition metal dichalcogenide monolayer. We measure time-resolved photoluminescence spatial profiles of these excitonic complexes which exhibit a non-linear diffusion process with an effective negative diffusion behavior. Specifically, we examine the dynamics of the two negatively charged bright excitons (intervalley and intravalley trion) as well as the dark trion. The time evolution allows us to identify the interplay of different excitonic species: the trionic species appear after the neutral excitonic ones, consistent with a bimolecular formation mechanism. Using the experimental observations, we propose a phenomenological model suggesting the coexistence of two populations: a first one exhibiting a fast and efficient diffusion mechanism and a second one with a slower dynamics and a less efficient diffusion process. These two contributions could be attributed to hot and cold trion populations. △ Less

Submitted 1 August, 2022; originally announced August 2022.

Magnetic imaging with spin defects in hexagonal boron nitride

Authors: P. Kumar, F. Fabre, A. Durand, T. Clua-Provost, J. Li, J. H. Edgar, N. Rougemaille, J. Coraux, X. Marie, P. Renucci, C. Robert, I. Robert-Philip, B. Gil, G. Cassabois, A. Finco, V. Jacques

Abstract: Optically-active spin defects hosted in hexagonal boron nitride (hBN) are promising candidates for the development of a two-dimensional (2D) quantum sensing unit. Here, we demonstrate quantitative magnetic imaging with hBN flakes doped with negatively-charged boron-vacancy (V$_{\rm B}^-$) centers through neutron irradiation. As a proof-of-concept, we image the magnetic field produced by CrTe$_2$,… ▽ More Optically-active spin defects hosted in hexagonal boron nitride (hBN) are promising candidates for the development of a two-dimensional (2D) quantum sensing unit. Here, we demonstrate quantitative magnetic imaging with hBN flakes doped with negatively-charged boron-vacancy (V$_{\rm B}^-$) centers through neutron irradiation. As a proof-of-concept, we image the magnetic field produced by CrTe$_2$, a van der Waals ferromagnet with a Curie temperature slightly above $300$ K. Compared to other quantum sensors embedded in 3D materials, the advantages of the hBN-based magnetic sensor described in this work are its ease of use, high flexibility and, more importantly, its ability to be placed in close proximity to a target sample. Such a sensing unit will likely find numerous applications in 2D materials research by offering a simple way to probe the physics of van der Waals heterostructures. △ Less

Submitted 21 July, 2022; originally announced July 2022.

Comments: 5 pages, 3 figures, supplemental material as ancillary file

Journal ref: Phys. Rev. Applied 18, L061002 (2022)

Optical manipulation of the Rashba effect in germanium quantum wells

Authors: S. Rossi, E. Talamas Simola, M. Raimondo, M. Acciarri, J. Pedrini, A. Balocchi, X. Marie, G. Isella, F. Pezzoli

Abstract: The Rashba effect in Ge/Si$_{0.15}$Ge$_{0.85}$ multiple quantum wells embedded in a p-i-n diode is studied through polarization and time-resolved photoluminescence. In addition to a sizeable redshift arising from the quantum-confined Stark effect, a threefold enhancement of the circular polarization degree of the direct transition is obtained by increasing the pump power over a 2kW/cm$^2$ range. T… ▽ More The Rashba effect in Ge/Si$_{0.15}$Ge$_{0.85}$ multiple quantum wells embedded in a p-i-n diode is studied through polarization and time-resolved photoluminescence. In addition to a sizeable redshift arising from the quantum-confined Stark effect, a threefold enhancement of the circular polarization degree of the direct transition is obtained by increasing the pump power over a 2kW/cm$^2$ range. This marked variation reflects an efficient modulation of the spin population and is further supported by dedicated investigations of the indirect gap transition. This study demonstrates a viable strategy to engineer the spin-orbit Hamiltonian through contactless optical excitation and opens the way towards the electro-optical manipulation of spins in quantum devices based on group-IV heterostructures. △ Less

Submitted 20 May, 2022; originally announced May 2022.

Journal ref: Adv. Optical Mater. 2022, 2201082

One pot chemical vapor deposition of high optical quality large area monolayer Janus transition metal dichalcogenides

Authors: Ziyang Gan, Ioannis Paradisanos, Ana Estrada-Real, Julian Picker, Emad Najafidehaghani, Francis Davies, Christof Neumann, Cedric Robert, Peter Wiecha, Kenji Watanabe, Takashi Taniguchi, Xavier Marie, Arkady V. Krasheninnikov, Bernhard Urbaszek, Antony George, Andrey Turchanin

Abstract: We report one-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these two-dimensional semiconductor monolayers takes place upon the thermodynamic equilibrium-driven exchange of the bottom Se atoms of the initially grown MoSe2 s… ▽ More We report one-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these two-dimensional semiconductor monolayers takes place upon the thermodynamic equilibrium-driven exchange of the bottom Se atoms of the initially grown MoSe2 single crystals on gold foils with S atoms. The growth process is characterized by complementary experimental techniques including Raman and X-ray photoelectron spectroscopy and the growth mechanisms are rationalized by first principle calculations. The remarkably high optical quality of the synthesized Janus monolayers is demonstrated by optical and magneto-optical measurements which reveal the strong exciton-phonon coupling and enable to obtain the exciton g-factor of -3.3. △ Less

Submitted 10 May, 2022; originally announced May 2022.

Intervalley electron-hole exchange interaction and impurity-assisted recombination of indirect excitons in WS$_2$ and WSe$_2$ monolayers

Authors: Pengke Li, Cedric Robert, Dinh Van Tuan, Lei Ren, Xavier Marie, Hanan Dery

Abstract: The variety of excitonic states in tungsten-based dichalcogenide monolayers stems from unique interplay between the spin and valley degrees of freedom. One of the exciton species is the indirect exciton (momentum or valley dark), which is responsible to a series of resonances when the monolayer is charge neutral. We investigate the short-range electron-hole exchange interaction of the indirect exc… ▽ More The variety of excitonic states in tungsten-based dichalcogenide monolayers stems from unique interplay between the spin and valley degrees of freedom. One of the exciton species is the indirect exciton (momentum or valley dark), which is responsible to a series of resonances when the monolayer is charge neutral. We investigate the short-range electron-hole exchange interaction of the indirect exciton, as well as its recombination mechanism mediated by impurities. The analysis provides thorough understanding of the energy and polarization of the zero-phonon indirect exciton resonance in the emission spectrum. △ Less

Submitted 29 April, 2022; originally announced May 2022.

Journal ref: Phys. Rev. B 106, 085414 (2022)

Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride

Authors: Dorian Beret, Ioannis Paradisanos, Ziyang Gan, Emad Naja dehaghani, Antony George, Tibor Lehnert, Johannes Biskupek, Shivangi Shree, Ana Estrada-Real, Delphine Lagarde, Jean-Marie Poumirol, Vincent Paillard, Kenji Watanabe, Takashi Taniguchi, Xavier Marie, Ute Kaiser, Pierre Renucci, Laurent Lombez, Andrey Turchanin, Bernhard Urbaszek

Abstract: Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostruc… ▽ More Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure samples due to large inhomogeneous broadening of the optical transitions. Here we perform optical spectroscopy at T = 4 K and also at 300 K to access the optical transitions in CVD grown MoSe2-WSe2 lateral heterostructures that are transferred from the growth-substrate and are encapsulated in hBN. Photoluminescence (PL), reflectance contrast and Raman spectroscopy reveal considerably narrowed optical transition linewidth similar to high quality exfoliated monolayers. In high-resolution transmission electron microscopy (HRTEM) we find near-atomically sharp junctions with a typical extent of 3nm for the covalently bonded MoSe2-WSe2. In PL imaging experiments we find effective excitonic diffusion length that are longer for WSe2 than for MoSe2 at low T=4 K, whereas at 300 K this trend is reversed. △ Less

Submitted 15 April, 2022; originally announced April 2022.

Comments: Main and supplement

Journal ref: npj 2D Materials and Applications, volume 6, Article number: 84 (2022) (with additional near-field data)

Valley polarization fluctuations, bistability, and switching in two-dimensional semiconductors

Authors: M. A. Semina, M. M. Glazov, C. Robert, L. Lombez, T. Amand, X. Marie

Abstract: We study theoretically nonlinear valley polarization dynamics of excitons in atom-thin semiconductors. The presence of significant polarization slows down valley relaxation due to an effective magnetic field resulting from exciton-exciton interactions. We address temporal dynamics of valley polarized excitons and study the steady states of the polarized exciton gas. We demonstrate bistability of t… ▽ More We study theoretically nonlinear valley polarization dynamics of excitons in atom-thin semiconductors. The presence of significant polarization slows down valley relaxation due to an effective magnetic field resulting from exciton-exciton interactions. We address temporal dynamics of valley polarized excitons and study the steady states of the polarized exciton gas. We demonstrate bistability of the valley polarization where two steady states with low and high valley polarization are formed. We study the effects of fluctuations and noise in such system. We evaluate valley polarization autocorrelation functions and demonstrate that for a high-polarization regime the fluctuations are characterized by high amplitude and long relaxation time. We study the switching between the low- and high-valley polarized states caused by the noise in the system and demonstrate that the state with high valley polarization is preferential in a wide range of pum** rates. △ Less

Submitted 28 June, 2022; v1 submitted 10 April, 2022; originally announced April 2022.

Comments: 11 pages, 6 figures

Optical detection of long electron spin transport lengths in a monolayer semiconductor

Authors: Lei Ren, Laurent Lombez, Cedric Robert, Dorian Beret, Delphine Lagarde, Bernhard Urbaszek, Pierre Renucci, Takashi Taniguchi, Kenji Watanabe, Scott A. Crooker, Xavier Marie

Abstract: Using a spatially-resolved optical pump-probe experiment, we measure the lateral transport of spin/valley polarized electrons over very long distances (tens of micrometers) in a single WSe2 monolayer. By locally pum** the Fermi sea of 2D electrons to a high degree of spin/valley polarization (up to 75%) using circularly-polarized light, the lateral diffusion of the electron polarization can be m… ▽ More Using a spatially-resolved optical pump-probe experiment, we measure the lateral transport of spin/valley polarized electrons over very long distances (tens of micrometers) in a single WSe2 monolayer. By locally pum** the Fermi sea of 2D electrons to a high degree of spin/valley polarization (up to 75%) using circularly-polarized light, the lateral diffusion of the electron polarization can be mapped out via the photoluminescence induced by a spatially-separated and linearly-polarized probe laser. Up to 25% spin-valley polarization is observed at pump-probe separations up to 20 microns. Characteristic spin/valley diffusion lengths of 18 +/- 3 um are revealed at low temperatures. The dependence on temperature, pump helicity, pump intensity, and electron density highlight the key roles played by spin relaxation time and pum** efficiency on polarized electron transport in monolayer semiconductors possessing spin-valley locking. △ Less

Submitted 2 February, 2022; originally announced February 2022.

From the synthesis of hBN crystals to their use as nanosheets for optoelectronic devices

Authors: Camille Maestre, Yangdi Li, Vincent Garnier, Philippe Steyer, Sébastien Roux, Alexandre Plaud, Annick Loiseau, Julien Barjon, Lei Ren, Cédric Robert, Bo Han, Xavier Marie, Catherine Journet, Bérangère Toury

Abstract: In the wide world of 2D materials, hexagonal boron nitride (hBN) holds a special place due to its excellent characteristics. In addition to its thermal, chemical and mechanical stability, hBN demonstrates high thermal conductivity, low compressibility, and wide band gap around 6 eV, making it promising candidate for many groundbreaking applications and more specifically for optoelectronic devices.… ▽ More In the wide world of 2D materials, hexagonal boron nitride (hBN) holds a special place due to its excellent characteristics. In addition to its thermal, chemical and mechanical stability, hBN demonstrates high thermal conductivity, low compressibility, and wide band gap around 6 eV, making it promising candidate for many groundbreaking applications and more specifically for optoelectronic devices. Millimeters scale hexagonal boron nitride crystals are obtained through a disruptive dual method (PDC/PCS) consisting in a complementary coupling of the Polymer Derived Ceramics route and a Pressure-Controlled Sintering process. In addition to their excellent chemical and crystalline quality, these crystals exhibit a free exciton lifetime of 0.43 ns, as determined by time-resolved cathodoluminescence measurements, confirming their interesting optical properties. To go further in applicative fields, hBN crystals are then exfoliated, and resulting Boron Nitride NanoSheets (BNNSs) are used to encapsulate transition metal dichalcogenides (TMDs). Such van der Waals heterostructures are tested by optical spectroscopy. BNNSs do not luminesce in the emission spectral range of TMDs and the photoluminescence width of the exciton at 4K is in the range 2-3 meV. All these results demonstrate that these BNNSs are relevant for future opto-electronic applications. △ Less

Submitted 19 January, 2022; originally announced January 2022.

Comments: 16 pages, 9 figures

Spin dependent charge transfer in MoSe2/hBN/Ni hybrid structures

Authors: H. Tornatzky, C. Robert, P. Renucci, B. Han, T. Blon, B. Lassagne, G. Ballon, Y. Lu, K. Watanabe, T. Taniguchi, B. Urbaszek, J. M. J. Lopes, X. Marie

Abstract: We present magneto-photoluminescence measurements in a hybrid 2D semiconductor/ferromagnetic structure consisting of MoSe2/hBN/Ni. When the Nickel layer is magnetized, we observe circularly polarized photoluminescence of the trion peak in MoSe2 monolayer under linearly polarized excitation. This build-up of circular polarization can reach a measured value of about 4% when the magnetization of Ni i… ▽ More We present magneto-photoluminescence measurements in a hybrid 2D semiconductor/ferromagnetic structure consisting of MoSe2/hBN/Ni. When the Nickel layer is magnetized, we observe circularly polarized photoluminescence of the trion peak in MoSe2 monolayer under linearly polarized excitation. This build-up of circular polarization can reach a measured value of about 4% when the magnetization of Ni is saturated perpendicularly to the sample plane, and changes its sign when the magnetization is reversed. The circular polarization decreases when the hBN barrier thickness increases. These results are interpreted in terms of a spin-dependent charge transfer between the MoSe2 monolayer and the Nickel film. The build-up of circular polarization is observed up to 120 K, mainly limited by the trion emission that vanishes with temperature. △ Less

Submitted 25 October, 2021; originally announced October 2021.

Machine learning assisted GaAsN circular polarimeter

Authors: A. Aguirre-Perez, R. S. Joshya, H. Carrère, X. Marie, T. Amand, A. Balocchi, A. Kunold

Abstract: We demonstrate the application of a two stage machine learning algorithm that enables to correlate the electrical signals from a GaAs$_x$N$_{1-x}$ circular polarimeter with the intensity, degree of circular polarization and handedness of an incident light beam. Specifically, we employ a multimodal logistic regression to discriminate the handedness of light and a 6-layer neural network to establish… ▽ More We demonstrate the application of a two stage machine learning algorithm that enables to correlate the electrical signals from a GaAs$_x$N$_{1-x}$ circular polarimeter with the intensity, degree of circular polarization and handedness of an incident light beam. Specifically, we employ a multimodal logistic regression to discriminate the handedness of light and a 6-layer neural network to establish the relationship between the input voltages, the intensity and degree of circular polarization. We have developed a particular neural network training strategy that substantially improves the accuracy of the device. The algorithm was trained and tested on theoretically generated photoconductivity and on photoluminescence experimental results. Even for a small training experimental dataset (70 instances), it is shown that the proposed algorithm correctly predicts linear, right and left circularly polarized light misclassifying less than $1.5\%$ of the cases and attains an accuracy larger than $97\%$ in the vast majority of the predictions ($92\%$) for intensity and degree of circular polarization. These numbers are significantly improved for the larger theoretically generated datasets (4851 instances). The algorithm is versatile enough that it can be easily adjusted to other device configurations where a map needs to be established between the input parameters and the device response. Training and testing data files as well as the algorithm are provided as supplementary material. △ Less

Submitted 15 October, 2021; originally announced October 2021.

Comments: 20 pages, 13 figures

Second harmonic generation control in twisted bilayers of transition metal dichalcogenides

Authors: Ioannis Paradisanos, Andres Manuel Saiz Raven, Thierry Amand, Cedric Robert, Pierre Renucci, Kenji Watanabe, Takashi Taniguchi, Iann C. Gerber, Xavier Marie, Bernhard Urbaszek

Abstract: The twist angle in transition metal dichalcogenide (TMD) heterobilayers is a compelling degree of freedom that determines electron correlations and the period of lateral confinement of moiré excitons. Here we perform polarization-resolved second harmonic generation (SHG) spectroscopy of MoS2/WSe2 heterostructures. We demonstrate that by choosing suitable laser energies the twist angle between two… ▽ More The twist angle in transition metal dichalcogenide (TMD) heterobilayers is a compelling degree of freedom that determines electron correlations and the period of lateral confinement of moiré excitons. Here we perform polarization-resolved second harmonic generation (SHG) spectroscopy of MoS2/WSe2 heterostructures. We demonstrate that by choosing suitable laser energies the twist angle between two monolayers can be measured directly on the assembled heterostructure. We show that the amplitude and polarization of the SHG signal from the heterostructure are determined by the twist angle between the layers and exciton resonances at the SH energy. For heterostructures with close to zero twist angle, we observe changes of exciton resonance energies and the appearance of new resonances in the linear and non-linear susceptibilities. △ Less

Submitted 15 October, 2021; originally announced October 2021.

Comments: main text and supplement

Journal ref: Physical Review B 105, 115420 (2022)

Relaxation and darkening of excitonic complexes in electrostatically-doped monolayer semiconductors: Roles of exciton-electron and trion-electron interactions

Authors: Min Yang, Lei Ren, Cedric Robert, Dinh Van Tuan, Laurent Lombez, Bernhard Urbaszek, Xavier Marie, Hanan Dery

Abstract: We present photoluminescence measurements in monolayer WSe$_2$, which point to the importance of the interaction between charged particles and excitonic complexes. The theoretical analysis highlights the key role played by exchange scattering, referring to cases wherein the particle composition of the complex changes after the interaction. For example, exchange scattering renders bright excitonic… ▽ More We present photoluminescence measurements in monolayer WSe$_2$, which point to the importance of the interaction between charged particles and excitonic complexes. The theoretical analysis highlights the key role played by exchange scattering, referring to cases wherein the particle composition of the complex changes after the interaction. For example, exchange scattering renders bright excitonic complexes dark in monolayer WSe$_2$ on accounts of the unique valley-spin configuration in this material. In addition to the ultrafast energy relaxation of hot excitonic complexes following their interaction with electrons or holes, our analysis sheds light on several key features that are commonly seen in the photoluminescence of this monolayer semiconductor. In particular, we can understand why the photoluminescence intensity of the neutral bright exciton is strongest when the monolayer is hole-doped rather than charge neutral or electron-doped. Or the reason for the dramatic increase of the photoluminescence intensity of negatively-charged excitons (trions) as soon as electrons are added to the monolayer. To self-consistently explain the findings, we further study the photoluminescence spectra at different excitation energies and analyze the behavior of the elusive indirect exciton. △ Less

Submitted 2 October, 2021; originally announced October 2021.

Comments: 10 figures. Any feedback will be appreciated. If you think we have missed a relevant reference, then please let us know the reason we should add the reference and where exactly in the text

Journal ref: Phys. Rev. B 105, 085302 (2022)

Capacitively-coupled and inductively-coupled excitons in bilayer MoS$_2$

Authors: Lukas Sponfeldner, Nadine Leisgang, Shivangi Shree, Ioannis Paradisanos, Kenji Watanabe, Takashi Taniguchi, Cedric Robert, Delphine Lagarde, Andrea Balocchi, Xavier Marie, Iann C. Gerber, Bernhard Urbaszek, Richard J. Warburton

Abstract: The interaction of intralayer and interlayer excitons is studied in a two-dimensional semiconductor, homobilayer MoS$_2$. It is shown that the measured optical susceptibility reveals both the magnitude and the sign of the coupling constants. The interlayer exciton interacts capacitively with the intralayer B-exciton (positive coupling constant) consistent with hole tunnelling from one monolayer to… ▽ More The interaction of intralayer and interlayer excitons is studied in a two-dimensional semiconductor, homobilayer MoS$_2$. It is shown that the measured optical susceptibility reveals both the magnitude and the sign of the coupling constants. The interlayer exciton interacts capacitively with the intralayer B-exciton (positive coupling constant) consistent with hole tunnelling from one monolayer to the other. Conversely, the interlayer exciton interacts inductively with the intralayer A-exciton (negative coupling constant). First-principles many-body calculations show that this coupling arises via an intravalley exchange-interaction of A- and B-excitons. △ Less

Submitted 9 August, 2021; originally announced August 2021.

Comments: Main text: 6 pages, 4 figures; Supplementary Information: 17 pages, 15 figures

Large perpendicular magnetic anisotropy in Ta/CoFeB/MgO on full coverage monolayer MoS2 and first principle study of its electronic structure

Authors: Ziqi Zhou, Paul Marcon, Xavier Devaux, Philippe Pigeat, Alexandre Bouché, Sylvie Migot, Abdallah Jaafar, Remi Arras, Michel Vergnat, Lei Ren, Hans Tornatzky, Cedric Robert, Xavier Marie, Jean-Marie George, Henri-Yves Jaffrès, Mathieu Stoffel, Hervé Rinnert, Zhongming Wei, Pierre Renucci, Lionel Calmels, Yuan Lu

Abstract: Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for develo** spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth of Ta/CoFeB/MgO structures with a large perpendicular magnetic anisotropy (PMA) on full coverage monolayer (ML) MoS2. A large perpendicular interface anisotropy… ▽ More Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for develo** spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth of Ta/CoFeB/MgO structures with a large perpendicular magnetic anisotropy (PMA) on full coverage monolayer (ML) MoS2. A large perpendicular interface anisotropy energy of 0.975mJ/m2 has been obtained at the CoFeB/MgO interface, comparable to that observed in magnetic tunnel junction systems. It is found that the insertion of MgO between the ferromagnetic metal (FM) and the 2D material can effectively prevent the diffusion of the FM atoms into the 2D material. Moreover, the MoS2 ML favors a MgO(001) texture and plays a critical role to establish the large PMA. First principle calculations on a similar Fe/MgO/MoS2 structure reveal that the MgO thickness can modify the MoS2 band structure, from an indirect bandgap with 7ML-MgO to a direct bandgap with 3ML-MgO. Proximity effect induced by Fe results in a splitting of 10meV in the valence band at the Γ point for the 3ML-MgO structure while it is negligible for the 7ML-MgO structure. These results pave the way to develop RT spin optoelectronic devices on 2D transition-metal dichalcogenide materials. △ Less

Submitted 18 June, 2021; originally announced June 2021.

Imaging Seebeck drift of excitons and trions in MoSe2 monolayers

Authors: Sangjun Park, Bo Han, Caroline Boule, Daniel Paget, Alistair Rowe, Fausto Sirotti, Takashi Taniguchi, Kenji Watanabe, Cedric Robert, Laurent Lombez, Bernhard Urbaszek, Xavier Marie, Fabian Cadiz

Abstract: Hyperspectral imaging at cryogenic temperatures is used to investigate exciton and trion propagation in MoSe$_2$ monolayers encapsulated with hexagonal boron nitride (hBN). Under a tightly focused, continuous-wave laser excitation, the spatial distribution of neutral excitons and charged trions strongly differ at high excitation densities. Remarkably, in this regime the trion distribution develops… ▽ More Hyperspectral imaging at cryogenic temperatures is used to investigate exciton and trion propagation in MoSe$_2$ monolayers encapsulated with hexagonal boron nitride (hBN). Under a tightly focused, continuous-wave laser excitation, the spatial distribution of neutral excitons and charged trions strongly differ at high excitation densities. Remarkably, in this regime the trion distribution develops a halo shape, similar to that previously observed in WS2 monolayers at room temperature and under pulsed excitation. In contrast, the exciton distribution only presents a moderate broadening without the appereance of a halo. Spatially and spectrally resolved luminescence spectra reveal the buildup of a significant temperature gradient at high excitation power, that is attributed to the energy relaxation of photoinduced hot carriers. We show, via a numerical resolution of the transport equations for excitons and trions, that the halo can be interpreted as thermal drift of trions due to a Seebeck term in the particle current. The model shows that the difference between trion and exciton profiles is simply understood in terms of the very different lifetimes of these two quasiparticles. △ Less

Submitted 20 May, 2021; originally announced May 2021.

Journal ref: 2D Mater. 8 045014 (2021)

Spin/Valley pum** of resident electrons in WSe2 and WS2 monolayers

Authors: Cedric Robert, Sangjun Park, Fabian Cadiz, Laurent Lombez, Lei Ren, Hans Tornatzky, Alistair Rowe, Daniel Paget, Fausto Sirotti, Min Yang, Dinh Van Tuan, Takashi Taniguchi, Bernhard Urbaszek, Kenji Watanabe, Thierry Amand, Hanan Dery, Xavier Marie

Abstract: Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short lifetime and spin/valley relaxation time. Here we demonstrate a very efficient spin/valley optical pum** of resident electrons in n-doped WSe2 and WS2 monola… ▽ More Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short lifetime and spin/valley relaxation time. Here we demonstrate a very efficient spin/valley optical pum** of resident electrons in n-doped WSe2 and WS2 monolayers. We observe that, using a continuous wave laser and appropriate do** and excitation densities, negative trion doublet lines exhibit circular polarization of opposite sign and the photoluminescence intensity of the triplet trion is more than four times larger with circular excitation than with linear excitation. We interpret our results as a consequence of a large dynamic polarization of resident electrons using circular light. △ Less

Submitted 11 May, 2021; originally announced May 2021.

Interlayer exciton mediated second harmonic generation in bilayer MoS2

Authors: Shivangi Shree, Delphine Lagarde, Laurent Lombez, Cedric Robert, Andrea Balocchi, Kenji Watanabe, Takashi Taniguchi, Xavier Marie, Iann C. Gerber, Mikhail M. Glazov, Leonid E. Golub, Bernhard Urbaszek, Ioannis Paradisanos

Abstract: Second harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of… ▽ More Second harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of bilayer MoS2, that shows strong optical oscillator strength for the intra- but also inter-layer exciton resonances. As we tune the SHG signal onto these resonances by varying the laser energy, the SHG amplitude is enhanced by several orders of magnitude. In the resonant case the bilayer SHG signal reaches amplitudes comparable to the off-resonant signal from a monolayer. In applied electric fields the interlayer exciton energies can be tuned due to their in-built electric dipole via the Stark effect. As a result the interlayer exciton degeneracy is lifted and the bilayer SHG response is further enhanced by an additional two orders of magnitude, well reproduced by our model calculations. △ Less

Submitted 2 April, 2021; originally announced April 2021.

Comments: main paper and supplement

Journal ref: Nature Communications (2021) 12 : 6894

Chiral photodetector based on GaAsN

Authors: R. S. Joshya, H. Carrère, V. G. Ibarra-Sierra, J. C. Sandoval-Santana, V. K. Kalevich, E. L. Ivchenko, X. Marie, T. Amand, A. Kunold, A. Balocchi

Abstract: The detection of light helicity is key to several research and industrial applications from drugs production to optical communications. However, the direct measurement of the light helicity is inherently impossible with conventional photodetectors based on III-V or IV-VI semiconductors, being naturally non-chiral. The prior polarization analysis of the light by a series of often moving optical ele… ▽ More The detection of light helicity is key to several research and industrial applications from drugs production to optical communications. However, the direct measurement of the light helicity is inherently impossible with conventional photodetectors based on III-V or IV-VI semiconductors, being naturally non-chiral. The prior polarization analysis of the light by a series of often moving optical elements is necessary before light is sent to the detector. A method is here presented to effectively give to the conventional dilute nitride GaAs-based semiconductor epilayer a chiral photoconductivity in paramagnetic-defect-engineered samples. The detection scheme relies on the giant spin-dependent recombination of conduction electrons and the accompanying spin polarization of the engineered defects to control the conduction band population via the electrons' spin polarization. As the conduction electron spin polarization is, in turn, intimately linked to the excitation light polarization, the light polarization state can be determined by a simple conductivity measurement. This effectively gives the GaAsN epilayer a chiral photoconductivity capable of discriminating the handedness of an incident excitation light in addition to its intensity. This approach, removing the need of any optical elements in front of a non-chiral detector, could offer easier integration and miniaturisation. This new chiral photodetector could potentially operate in a spectral range from the visible to the infra-red using (In)(Al)GaAsN alloys or ion-implanted nitrogen-free III-V compounds. △ Less

Submitted 22 March, 2021; v1 submitted 26 February, 2021; originally announced February 2021.

Comments: 7 pages, 7 figures

Polarization sensitive photodectector based on GaAsN

Authors: V. G. Ibarra-Sierra, J. C. Sandoval-Santana, R. S. Joshya, H. Carrère, L. A. Bakaleinikov, V. K. Kalevich, E. L. Ivchenko, X. Marie, T. Amand, A. Balocchi, A. Kunold

Abstract: We propose and numerically simulate an optoelectronic compact circular polarimeter. It allows to electrically measure the degree of circular polarization and light intensity at room temperature for a wide range of incidence angles in a single shot. The device, being based on GaAsN, is easy to integrate into standard electronics and does not require bulky movable parts nor extra detectors. Its oper… ▽ More We propose and numerically simulate an optoelectronic compact circular polarimeter. It allows to electrically measure the degree of circular polarization and light intensity at room temperature for a wide range of incidence angles in a single shot. The device, being based on GaAsN, is easy to integrate into standard electronics and does not require bulky movable parts nor extra detectors. Its operation hinges mainly on two phenomena: the spin dependent capture of electrons and the hyperfine interaction between bound electrons and nuclei on Ga$^{2+}$ paramagnetic centers in GaAsN. The first phenomenon confers the device with sensitivity to the degree of circular polarization and the latter allows to discriminate the handedness of the incident light. △ Less

Submitted 19 February, 2021; originally announced February 2021.

Comments: 12 pages, 7 figures

Journal ref: Phys. Rev. Applied 15, 064040 (2021)

Control of the exciton valley dynamics in van der Waals heterostructures

Authors: A. I. Prazdnichnykh, M. M. Glazov, L. Ren, C. Robert, B. Urbaszek, X. Marie

Abstract: The exciton valley dynamics in van der Waals heterostructures with transition metal dichalcogenides monolayers is driven by the long-range exchange interaction between the electron and the hole in the exciton. It couples the states active in the opposite circular polarizations resulting in the longitudinal-transverse splitting of excitons propagating in the monolayer plane. Here we study theoretic… ▽ More The exciton valley dynamics in van der Waals heterostructures with transition metal dichalcogenides monolayers is driven by the long-range exchange interaction between the electron and the hole in the exciton. It couples the states active in the opposite circular polarizations resulting in the longitudinal-transverse splitting of excitons propagating in the monolayer plane. Here we study theoretically the effect of the dielectric environment on the long-range exchange interaction and demonstrate how the encapsulation in the hexagonal boron nitride modifies the exciton longitudinal-transverse splitting. We calculate the exciton spin/valley polarization relaxation due to the long-range exchange interaction and demonstrate that the variation of the monolayer environment results in significant, up to five-fold, enhancement of the exciton valley polarization lifetime. △ Less

Submitted 3 October, 2020; originally announced October 2020.

Comments: 12 pages, 6 figures

Journal ref: Phys. Rev. B 103, 085302 (2021)

Magneto-optical determination of the carrier lifetime in coherent Ge(1-x)Sn(x)/Ge heterostructures

Authors: Elisa Vitiello, Simone Rossi, Christopher A. Broderick, Giorgio Gravina, Andrea Balocchi, Xavier Marie, Eoin P. O'Reilly, Maksym Myronov, Fabio Pezzoli

Abstract: We present a magneto-optical study of the carrier dynamics in compressively strained Ge(1-x)Sn(x) films having Sn compositions up to 10% epitaxially grown on blanket Ge on Si (001) virtual substrates. We leverage the Hanle effect under steady-state excitation to study the spin-dependent optical transitions in presence of an external magnetic field. This allowed us to obtain direct access to the dy… ▽ More We present a magneto-optical study of the carrier dynamics in compressively strained Ge(1-x)Sn(x) films having Sn compositions up to 10% epitaxially grown on blanket Ge on Si (001) virtual substrates. We leverage the Hanle effect under steady-state excitation to study the spin-dependent optical transitions in presence of an external magnetic field. This allowed us to obtain direct access to the dynamics of the optically-induced carrier population. Our approach singled out that at cryogenic temperatures the effective lifetime of the photogenerated carriers in coherent Ge(1-x)Sn(x) occurs in the sub-ns time scale. Supported by a model estimate of the radiative lifetime, our measurements indicate that carrier recombination is dominated by non-radiative processes. Our results thus provide central information to advance the fundamental understanding of carrier kinetics in this novel direct-gap group-IV material system. Such knowledge can be a step** stone in the quest for the implementation of Ge(1-x)Sn(x)-based functional devices. △ Less

Submitted 2 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Applied 14, 064068 (2020)

Measurement of Conduction and Valence Bands g-factors in a Transition Metal Dichalcogenide Monolayer

Authors: Cedric Robert, Hanan Dery, Lei Ren, Dinh van Tuan, Emmanuel Courtade, Min Yang, Bernhard Urbaszek, Delphine Lagarde, Kenji Watanabe, Takashi Taniguchi, Thierry Amand, Xavier Marie

Abstract: The electron valley and spin degree of freedom in monolayer transition-metal dichalcogenides can be manipulated in optical and transport measurements performed in magnetic fields. The key parameter for determining the Zeeman splitting, namely the separate contribution of the electron and hole g-factor, is inaccessible in most measurements. Here we present an original method that gives access to th… ▽ More The electron valley and spin degree of freedom in monolayer transition-metal dichalcogenides can be manipulated in optical and transport measurements performed in magnetic fields. The key parameter for determining the Zeeman splitting, namely the separate contribution of the electron and hole g-factor, is inaccessible in most measurements. Here we present an original method that gives access to the respective contribution of the conduction and valence band to the measured Zeeman splitting. It exploits the optical selection rules of exciton complexes, in particular the ones involving inter-valley phonons, avoiding strong renormalization effects that compromise single particle g-factor determination in transport experiments. These studies yield a direct determination of single band g factors. We measure gc1= 0.86, gc2=3.84 for the bottom (top) conduction bands and gv=6.1 for the valence band of monolayer WSe2. These measurements are helpful for quantitative interpretation of optical and transport measurements performed in magnetic fields. In addition the measured g-factors are valuable input parameters for optimizing band structure calculations of these 2D materials. △ Less

Submitted 17 August, 2020; originally announced August 2020.

Journal ref: Phys. Rev. Lett. 126, 067403 (2021)

Spin-injection and spin-relaxation in p-doped InGaAs/GaAs quantum-dot spin light emitting diode at zero magnetic field

Authors: Alaa E. Giba, Xue Gao, Mathieu Stoffel, Xavier Devaux, Bo Xu, Xavier Marie, Pierre Renucci, Henri Jaffrès, Jean-Marie George, Guangwei Cong, Zhanguo Wang, Hervé Rinnert, Yuan Lu

Abstract: We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in remanence up to 100K. This result is obtained thanks to the combination of a perpendicularly magnetized CoFeB/MgO spin injector allowing efficient spin injection and… ▽ More We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in remanence up to 100K. This result is obtained thanks to the combination of a perpendicularly magnetized CoFeB/MgO spin injector allowing efficient spin injection and an appropriate p-doped InGaAs/GaAs QD layer in the active region. By analyzing the bias and temperature dependence of the electroluminescence circular polarization, we have evidenced a two-step spin relaxation process. The first step occurs when electrons tunnel through the MgO barrier and travel across the GaAs depletion layer. The spin relaxation is dominated by the Dyakonov-Perel mechanism related to the kinetic energy of electrons, which is characterized by a bias dependent Pc. The second step occurs when electrons are captured into QDs prior to their radiative recombination with holes. The temperature dependence of Pc reflects the temperature induced modification of the QDs do**, together with the variation of the ratio between the charge carrier lifetime and the spin relaxation time inside the QDs. The understanding of these spin relaxation mechanisms is essential to improve the performance of spin LED for future spin optoelectronic applications at room temperature under zero applied magnetic field. △ Less

Submitted 14 August, 2020; originally announced August 2020.

Comments: 24 pages, 5 figures

Unveiling the optical emission channels of monolayer semiconductors coupled to silicon nanoantennas

Authors: Jean-Marie Poumirol, Ioannis Paradisanos, Shivangi Shree, Gonzague Agez, Xavier Marie, Cedric Robert, Nicolas Mallet, Peter R. Wiecha, Guilhem Larrieu, Vincent Larrey, Frank Fournel, Kenji Watanabe, Takashi Taniguchi, Aurelien Cuche, Vincent Paillard, Bernhard Urbaszek

Abstract: Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stam** directly on broadband dielectric resonators, which have the ability to enhance the spontaneous emission rate and brightness of solid-state emitters at room temperature. We show strongly enhanced emission and directivity modifications in room temperature photoluminescence map** experim… ▽ More Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stam** directly on broadband dielectric resonators, which have the ability to enhance the spontaneous emission rate and brightness of solid-state emitters at room temperature. We show strongly enhanced emission and directivity modifications in room temperature photoluminescence map** experiments. By varying TMD material (WSe2 versus MoSe2) transferred on silicon nanoresonators with various designs (planarized versus non-planarized), we experimentally separate the different physical mechanisms that govern the global light emission enhancement. For WSe2 and MoSe2 we address the effects of Mie Resonances and strain in the monolayer. For WSe2 an important additional contribution comes from out-of-plane exciton dipoles. This paves the way for more targeted designs of TMD-Si nanoresonator structures for room temperature applications. △ Less

Submitted 24 July, 2020; originally announced July 2020.

Comments: 10 pages, 5 figures

Journal ref: ACS Photonics 2020

Efficient phonon cascades in hot photoluminescence of WSe$_2$ monolayers

Authors: Ioannis Paradisanos, Gang Wang, Evgeny M. Alexeev, Alisson R. Cadore, Xavier Marie, Andrea C. Ferrari, Mikhail M. Glazov, Bernhard Urbaszek

Abstract: Energy relaxation of photo-excited charge carriers is of significant fundamental interest and crucial for the performance of monolayer (1L) transition metal dichaclogenides (TMDs) in optoelectronics. We measure light scattering and emission in 1L-WSe$_2$ close to the laser excitation energy (down to~$\sim$0.6meV). We detect a series of periodic maxima in the hot photoluminescence intensity, stemmi… ▽ More Energy relaxation of photo-excited charge carriers is of significant fundamental interest and crucial for the performance of monolayer (1L) transition metal dichaclogenides (TMDs) in optoelectronics. We measure light scattering and emission in 1L-WSe$_2$ close to the laser excitation energy (down to~$\sim$0.6meV). We detect a series of periodic maxima in the hot photoluminescence intensity, stemming from energy states higher than the A-exciton state, in addition to sharp, non-periodic Raman lines related to the phonon modes. We find a period $\sim$15meV for peaks both below (Stokes) and above (anti-Stokes) the laser excitation energy. We detect 7 maxima from 78K to room temperature in the Stokes signal and 5 in the anti-Stokes, of increasing intensity with temperature. We assign these to phonon cascades, whereby carriers undergo phonon-induced transitions between real states in the free-carrier gap with a probability of radiative recombination at each step. We infer that intermediate states in the conduction band at the $Λ$-valley of the Brillouin zone participate in the cascade process of 1L-WSe$_2$. The observations explain the primary stages of carrier relaxation, not accessible so far in time-resolved experiments. This is important for optoelectronic applications, such as photodetectors and lasers, because these determine the recovery rate and, as a consequence, the devices' speed and efficiency. △ Less

Submitted 10 July, 2020; originally announced July 2020.

Comments: 13 pages, 10 figures

Journal ref: Nature Communications, volume 12, Article number: 538 (2021)

Guide to optical spectroscopy of layered semiconductors

Authors: Shivangi Shree, Ioannis Paradisanos, Xavier Marie, Cedric Robert, Bernhard Urbaszek

Abstract: In this technical review we give an introduction to optical spectroscopy for layered materials as a powerful, non-invasive tool to access details of the electronic band structure and crystal quality. Potential applications in photonics and optoelectronics are based on our understanding of the light-matter interaction on an atomic monolayer scale. Here atomically thin transition metal dichalcogenid… ▽ More In this technical review we give an introduction to optical spectroscopy for layered materials as a powerful, non-invasive tool to access details of the electronic band structure and crystal quality. Potential applications in photonics and optoelectronics are based on our understanding of the light-matter interaction on an atomic monolayer scale. Here atomically thin transition metal dichalcogenides, such as MoS2 and WSe2, are model systems for layered semiconductors with a bandgap in the visible region of the optical spectrum. They can be assembled to form heterostructures and combine the unique properties of the constituent monolayers. We review the working principles of micro-photoluminescence spectroscopy and optical absorption experiments. We discuss the physical origin of the main absorption and emission features in the optical spectra and how they can be tuned. We explain key-aspects of practical set-ups for performing experiments in different conditions such as variable temperatures or in applied magnetic fields and how parameters such as detection spot size and excitation laser wavelength impact the optical spectra. We describe the important influence of the direct sample environment, such as substrates and encapsulation layers, on the emission and absorption mechanisms. A survey of optical techniques that probe the coupling between layers and analyse carrier polarisation dynamics for spin- and valleytronics is provided. △ Less

Submitted 30 June, 2020; originally announced June 2020.

Comments: 12 pages, 4 Figures, initial version

Journal ref: Nature Reviews Physics 2020

Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

Authors: P. Barate, S. Liang, T. T. Zhang, J. Frougier, M. Vidal, P. Renucci, X. Devaux, B. Xu, H. Jaffrès, J. M. George, X. Marie, M. Hehn, S. Mangin, Y. Zheng, T. Amand, B. Tao, X. F. Han, Z. Wang, Y. Lu

Abstract: An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for t… ▽ More An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (Pc) with the increase of annealing temperature, followed by a saturation of Pc beyond 350°C annealing. Since the increase of Pc starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential important for an optimal spin injection into semiconductor. △ Less

Submitted 7 April, 2020; originally announced April 2020.

Journal ref: Applied Physics Letters, 105, 012404 (2014)

Mo Thio and Oxo-Thio Molecular Complexes Film as Self-Healing Catalyst for Photocatalytic Hydrogen Evolution on 2D Materials

Authors: Juliana Barros Barbosa, Pierre Louis Taberna, Valerie Bourdon, Iann C. Gerber, Romuald Poteau, Andrea Balocchi, Xavier Marie, Jerome Esvan, Pascal Puech, Antoine Barnabé, Lucianna Da Gama Fernandes Vieira, Ionut-Tudor Moraru, Jean Yves Chane-Ching

Abstract: 2D semiconducting nanosheets of Transition Metal Dichalcogenides are attractive materials for solar energy conversion because of their unique absorption properties. Here, we propose Mo thio- and oxo-thio-complexes anchored on 2D p-WSe2 nanosheets for efficient water splitting under visible light irradiation with photocurrent density up to 2.0 mA cm-2 at -0.2 V/NHE. Besides develo** high electro-… ▽ More 2D semiconducting nanosheets of Transition Metal Dichalcogenides are attractive materials for solar energy conversion because of their unique absorption properties. Here, we propose Mo thio- and oxo-thio-complexes anchored on 2D p-WSe2 nanosheets for efficient water splitting under visible light irradiation with photocurrent density up to 2.0 mA cm-2 at -0.2 V/NHE. Besides develo** high electro-catalytic activity, the Mo complexe films were shown to display ability to heal surface defects. We propose that the observed healing of surface defects arises from the strong adsorption on point defects of the 2D WSe2 substrate of Mo complexes such as (MoS4)2-, (MoOS3)2-, (Mo2S6O2)2- as shown from DFT calculations. In addition to display catalytic and healing effects, the thio-, oxo-thio Mo complexes films were shown to enhance charge carrier separation and migration for the hydrogen evolution reaction, thus representing an example of multicomponent passivation layer exhibiting multiple properties. △ Less

Submitted 13 March, 2020; originally announced March 2020.

Measurement of the Spin-Forbidden Dark Excitons in MoS2 and MoSe2 monolayers

Authors: C. Robert, B. Han, P. Kapuscinski, A. Delhomme, C. Faugeras, T. Amand, M. R. Molas, M. Bartos, K. Watanabe, T. Taniguchi, B. Urbaszek, M. Potemski, X. Marie

Abstract: Excitons with binding energies of a few hundreds of meV control the optical properties of transition metal dichalcogenide monolayers. Knowledge of the fine structure of these excitons is therefore essential to understand the optoelectronic properties of these 2D materials. Here we measure the exciton fine structure of MoS2 and MoSe2 monolayers encapsulated in boron nitride by magneto-photoluminesc… ▽ More Excitons with binding energies of a few hundreds of meV control the optical properties of transition metal dichalcogenide monolayers. Knowledge of the fine structure of these excitons is therefore essential to understand the optoelectronic properties of these 2D materials. Here we measure the exciton fine structure of MoS2 and MoSe2 monolayers encapsulated in boron nitride by magneto-photoluminescence spectroscopy in magnetic fields up to 30 T. The experiments performed in transverse magnetic field reveal a brightening of the spin-forbidden dark excitons in MoS2 monolayer: we find that the dark excitons appear at 14 meV below the bright ones. Measurements performed in tilted magnetic field provide a conceivable description of the neutral exciton fine structure. The experimental results are in agreement with a model taking into account the effect of the exchange interaction on both the bright and dark exciton states as well as the interaction with the magnetic field. △ Less

Submitted 10 February, 2020; originally announced February 2020.

Giant Stark splitting of an exciton in bilayer MoS$_2$

Authors: Nadine Leisgang, Shivangi Shree, Ioannis Paradisanos, Lukas Sponfeldner, Cedric Robert, Delphine Lagarde, Andrea Balocchi, Kenji Watanabe, Takashi Taniguchi, Xavier Marie, Richard J. Warburton, Iann C. Gerber, Bernhard Urbaszek

Abstract: Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin-valley memory applications. In monolayers optical absorption is strong, but the transition energy is not tunable as the neutral exciton has essentially no out-of-plane electric dipole. In contrast, interlayer exciton transitions in heterobilayers are widely tunable in applie… ▽ More Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin-valley memory applications. In monolayers optical absorption is strong, but the transition energy is not tunable as the neutral exciton has essentially no out-of-plane electric dipole. In contrast, interlayer exciton transitions in heterobilayers are widely tunable in applied electric fields, but their coupling to light is considerably reduced. Here, we show tuning over 120 meV of interlayer excitons with high oscillator strength in bilayer MoS2. These shifts are due to the quantum confined Stark effect, here the electron is localised to one of the layers yet the hole is delocalised across the bilayer. We optically probe the interaction between intra- and interlayer excitons as they are energetically tuned into resonance. This allows studying their mixing supported by beyond standard density functional theory calculations including excitonic effects. In MoS2 trilayers our experiments uncover two types of interlayer excitons with and without in-built electric dipoles, respectively. Highly tunable excitonic transitions with large oscillator strength and in-built dipoles, that lead to considerable exciton-exciton interactions, hold great promise for non-linear optics with polaritons. △ Less

Submitted 18 June, 2021; v1 submitted 6 February, 2020; originally announced February 2020.

Comments: final author version

Journal ref: Nature Nanotechnology 15, 901 (2020)

Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition

Authors: Ioannis Paradisanos, Shivangi Shree, Antony George, Nadine Leisgang, Cedric Robert, Kenji Watanabe, Takashi Taniguchi, Richard J. Warburton, Andrey Turchanin, Xavier Marie, Iann C. Gerber, Bernhard Urbaszek

Abstract: Combining MoS$_2$ monolayers to form multilayers allows to access new functionalities. In this work, we examine the correlation between the stacking order and the interlayer coupling of valence states in MoS$_2$ homobilayer samples grown by chemical vapor deposition (CVD) and artificially stacked bilayers from CVD monolayers. We show that hole delocalization over the bilayer is allowed in 2H stack… ▽ More Combining MoS$_2$ monolayers to form multilayers allows to access new functionalities. In this work, we examine the correlation between the stacking order and the interlayer coupling of valence states in MoS$_2$ homobilayer samples grown by chemical vapor deposition (CVD) and artificially stacked bilayers from CVD monolayers. We show that hole delocalization over the bilayer is allowed in 2H stacking and results in strong interlayer exciton absorption and also in a larger A-B exciton separation as compared to 3R bilayers, where both holes and electrons are confined to the individual layers. Comparing 2H and 3R reflectivity spectra allows to extract an interlayer coupling energy of about $t_\perp=49$ meV. Obtaining very similar results for as-grown and artificially stacked bilayers is promising for assembling large area van der Waals structures with CVD material, using interlayer exciton absorption and A-B exciton separation as indicators for interlayer coupling. Beyond DFT calculations including excitonic effects confirm signatures of efficient interlayer coupling for 2H stacking in agreement with our experiments. △ Less

Submitted 24 January, 2020; originally announced January 2020.

Comments: 10 pages including supplement, 3 + 4 figures

Journal ref: Nature Communications (2020) 11 : 2391

Electron-nucleus spin correlation conservation of the spin dependent recombination in Ga$^{2+}$ centers

Authors: J. C. Sandoval-Santana, V. G. Ibarra-Sierra, H. Carrère, L. A. Bakaleinikov, V. K. Kalevich, E. L. Ivchenko, X. Marie, T. Amand, A. Balocchi, A. Kunold

Abstract: Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band electron spin polarizations close to 100% at room temperature. The mechanism behind the spin selective capture of electrons in Ga$^{2+}$ paramagnetic centers is revisited in this paper to address inconsistencies common to m… ▽ More Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band electron spin polarizations close to 100% at room temperature. The mechanism behind the spin selective capture of electrons in Ga$^{2+}$ paramagnetic centers is revisited in this paper to address inconsistencies common to most previously presented models. Primarily, these errors manifest themselves as major disagreements with the experimental observations of two key characteristics of this phenomenon: the effective Overhauser-like magnetic field and the width of the photoluminescence Lorentzian-like curves as a function of the illumination power. These features are not only essential to understand the spin dependent recombination in GaAsN, but are also key to the design of novel spintronic devices. Here we demonstrate that the particular structure of the electron capture expressions introduces spurious electron-nucleus correlations that artificially alter the balance between the hyperfine and the Zeeman contributions. This imbalance strongly distorts the effective magnetic field and width characteristics. In this work we propose an alternative recombination mechanism that preserves the electron-nucleus correlations and, at the same time, keeps the essential properties of the spin selective capture of electrons. This mechanism yields a significant improvement to the agreement between experimental and theoretical results. In particular, our model gives results in very good accord with the experimental effective Overhauser-like magnetic field and width data, and with the degree of circular polarization under oblique magnetic fields. △ Less

Submitted 8 October, 2019; originally announced October 2019.

Comments: 13 pages, 6 figures

Journal ref: Phys. Rev. B 101, 075201 (2020)

Exciton valley depolarization in monolayer transition-metal dichalcogenides

Authors: Min Yang, Cedric Robert, Zhengguang Lu, Dinh Van Tuan, Dmitry Smirnov, Xavier Marie, Hanan Dery

Abstract: The valley degree of freedom is a sought-after quantum number in monolayer transition-metal dichalcogenides. Similar to optical spin orientation in semiconductors, the helicity of absorbed photons can be relayed to the valley (pseudospin) quantum number of photoexcited electrons and holes. Also similar to the quantum-mechanical spin, the valley quantum number is not a conserved quantity. Valley de… ▽ More The valley degree of freedom is a sought-after quantum number in monolayer transition-metal dichalcogenides. Similar to optical spin orientation in semiconductors, the helicity of absorbed photons can be relayed to the valley (pseudospin) quantum number of photoexcited electrons and holes. Also similar to the quantum-mechanical spin, the valley quantum number is not a conserved quantity. Valley depolarization of excitons in monolayer transition-metal dichalcogenides due to long-range electron-hole exchange typically takes a few ps at low temperatures. Exceptions to this behavior are monolayers MoSe$_2$ and MoTe$_2$ wherein the depolarization is much faster. We elucidate the enigmatic anomaly of these materials, finding that it originates from Rashba-induced coupling of the dark and bright exciton branches next to their degeneracy point. When photoexcited excitons scatter during their energy relaxation between states next to the degeneracy region, they reach the light cone after losing the initial helicity. The valley depolarization is not as fast in monolayers WSe$_2$, WS$_2$ and likely MoS$_2$ wherein the Rashba-induced coupling is negligible. △ Less

Submitted 6 September, 2019; originally announced September 2019.

Comments: We would appreciate any feedback

Journal ref: Phys. Rev. B 101, 115307 (2020)

Filtering the photoluminescence spectra of atomically thin semiconductors with graphene

Authors: Etienne Lorchat, Luis E. Parra López, Cédric Robert, Delphine Lagarde, Guillaume Froehlicher, Takashi Taniguchi, Kenji Watanabe, Xavier Marie, Stéphane Berciaud

Abstract: Atomically thin semiconductors made from transition metal dichalcogenides (TMDs) are model systems for investigations of strong light-matter interactions and applications in nanophotonics, opto-electronics and valley-tronics. However, the photoluminescence spectra of TMD monolayers display a large number of features that are particularly challenging to decipher. On a practical level, monochromatic… ▽ More Atomically thin semiconductors made from transition metal dichalcogenides (TMDs) are model systems for investigations of strong light-matter interactions and applications in nanophotonics, opto-electronics and valley-tronics. However, the photoluminescence spectra of TMD monolayers display a large number of features that are particularly challenging to decipher. On a practical level, monochromatic TMD-based emitters would be beneficial for low-dimensional devices but this challenge is yet to be resolved. Here, we show that graphene, directly stacked onto TMD monolayers enables single and narrow-line photoluminescence arising solely from TMD neutral excitons. This filtering effect stems from complete neutralization of the TMD by graphene combined with selective non-radiative transfer of long-lived excitonic species to graphene. Our approach is applied to four tungsten and molybdenum-based TMDs and establishes TMD/graphene heterostructures as a unique set of opto-electronic building blocks, suitable for electroluminescent systems emitting visible and near-infrared photons at near THz rate with linewidths approaching the lifetime limit. △ Less

Submitted 5 November, 2020; v1 submitted 28 August, 2019; originally announced August 2019.

Comments: Main manuscript with 5 figures plus supplementary information file (including 9 supplementary sections and 14 supplementary figures)

Journal ref: Nature Nanotechnology 15, 283(2020)

Accessing high optical quality of MoS2 monolayers grown by chemical vapor deposition

Authors: Shivangi Shree, Antony George, Tibor Lehnert, Christof Neumann, Meryem Benelajla, Cedric Robert, Xavier Marie, Kenji Watanabe, Takashi Taniguchi, Ute Kaiser, Bernhard Urbaszek, Andrey Turchanin

Abstract: Chemical vapor deposition (CVD) allows growing transition metal dichalcogenides (TMDs) over large surface areas on inexpensive substrates. In this work, we correlate the structural quality of CVD grown MoS$_2$ monolayers (MLs) on SiO$_2$/Si wafers studied by high-resolution transmission electron microscopy (HRTEM) with high optical quality revealed in optical emission and absorption from cryogenic… ▽ More Chemical vapor deposition (CVD) allows growing transition metal dichalcogenides (TMDs) over large surface areas on inexpensive substrates. In this work, we correlate the structural quality of CVD grown MoS$_2$ monolayers (MLs) on SiO$_2$/Si wafers studied by high-resolution transmission electron microscopy (HRTEM) with high optical quality revealed in optical emission and absorption from cryogenic to ambient temperatures. We determine a defect concentration of the order of 10$^{13}$ cm$^{-2}$ for our samples with HRTEM. To have access to the intrinsic optical quality of the MLs, we remove the MLs from the SiO$_2$ growth substrate and encapsulate them in hBN flakes with low defect density, to reduce the detrimental impact of dielectric disorder. We show optical transition linewidth of 5 meV at low temperature (T=4 K) for the free excitons in emission and absorption. This is comparable to the best ML samples obtained by mechanical exfoliation of bulk material. The CVD grown MoS$_2$ ML photoluminescence is dominated by free excitons and not defects even at low temperature. High optical quality of the samples is further confirmed by the observation of excited exciton states of the Rydberg series. We optically generate valley coherence and valley polarization in our CVD grown MoS$_2$ layers, showing the possibility for studying spin and valley physics in CVD samples of large surface area. △ Less

Submitted 7 July, 2019; originally announced July 2019.

Comments: 12 pages, 3 figures, supplement

Journal ref: 2D Materials 7 (2020) 015011