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Symmetry-selective quasiparticle scattering and electric field tunability of the ZrSiS surface electronic structure
Authors:
Michael S. Lodge,
Elizabeth Marcellina,
Ziming Zhu,
Xiao-** Li,
Dariusz Kaczorowski,
Michael S. Fuhrer,
Shengyuan A. Yang,
Bent Weber
Abstract:
3D Dirac semimetals with square-net non-symmorphic symmetry, such as ternary ZrXY (X=Si, Ge; Y=S, Se, Te) compounds, have attracted significant attention owing to the presence of topological nodal lines, loops, or networks in their bulk. Orbital symmetry plays a profound role such materials as the different branches of the nodal dispersion can be distinguished by their distinct orbital symmetry ei…
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3D Dirac semimetals with square-net non-symmorphic symmetry, such as ternary ZrXY (X=Si, Ge; Y=S, Se, Te) compounds, have attracted significant attention owing to the presence of topological nodal lines, loops, or networks in their bulk. Orbital symmetry plays a profound role such materials as the different branches of the nodal dispersion can be distinguished by their distinct orbital symmetry eigenvalues. The presence of different eigenvalues suggests that scattering between states of different orbital symmetry may be strongly suppressed. Indeed, in ZrSiS, there has been no clear experimental evidence of quasiparticle scattering between states of different symmetry eigenvalue has been reported at small wave vector $q$. Here we show, using quasiparticle interference (QPI), that atomic step-edges in the ZrSiS surface facilitate quasiparticle scattering between states of different symmetry eigenvalues. This symmetry eigenvalue mixing quasiparticle scattering is the first to be reported for ZrSiS and contrasts quasiparticle scattering with no mixing of symmetry eigenvalues, where the latter occurs with scatterers preserving the glide mirror symmetry of the crystal lattice, e.g., native point defects in ZrSiS. Finally, we show that the electronic structure of the ZrSiS surface, including its unique floating band surface state (FBSS), can be tuned by a vertical electric field locally applied by the tip of a scanning tunneling microscope (STM), enabling control of a spin-orbit induced avoided crossing near the Fermi level by as much as 300%.
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Submitted 2 February, 2024;
originally announced February 2024.
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Tuning the Many-body Interactions in a Helical Luttinger Liquid
Authors:
Junxiang Jia,
Elizabeth Marcellina,
Anirban Das,
Michael S. Lodge,
BaoKai Wang,
Duc Quan Ho,
Riddhi Biswas,
Tuan Anh Pham,
Wei Tao,
Cheng-Yi Huang,
Hsin Lin,
Arun Bansil,
Shantanu Mukherjee,
Bent Weber
Abstract:
In one-dimensional (1D) systems, electronic interactions lead to a breakdown of Fermi liquid theory and the formation of a Tomonaga-Luttinger Liquid (TLL). The strength of its many-body correlations can be quantified by a single dimensionless parameter, the Luttinger parameter $K$, characterising the competition between the electrons' kinetic and electrostatic energies. Recently, signatures of a T…
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In one-dimensional (1D) systems, electronic interactions lead to a breakdown of Fermi liquid theory and the formation of a Tomonaga-Luttinger Liquid (TLL). The strength of its many-body correlations can be quantified by a single dimensionless parameter, the Luttinger parameter $K$, characterising the competition between the electrons' kinetic and electrostatic energies. Recently, signatures of a TLL have been reported for the topological edge states of quantum spin Hall (QSH) insulators, strictly 1D electronic structures with linear (Dirac) dispersion and spin-momentum locking. Here we show that the many-body interactions in such helical Luttinger Liquid can be effectively controlled by the edge state's dielectric environment. This is reflected in a tunability of the Luttinger parameter $K$, distinct on different edges of the crystal, and extracted to high accuracy from the statistics of tunnelling spectra at tens of tunneling points. The interplay of topology and many-body correlations in 1D helical systems has been suggested as a potential avenue towards realising non-Abelian parafermions.
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Submitted 21 September, 2022;
originally announced September 2022.
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Generating a topological anomalous Hall effect in a non-magnetic conductor
Authors:
James H. Cullen,
Pankaj Bhalla,
Elizabeth Marcellina,
Alexander R. Hamilton,
Dimitrie Culcer
Abstract:
The ordinary Hall effect is driven by the Lorentz force, while its anomalous counterpart occurs in ferromagnets. Here we show that the Berry curvature monopole of non-magnetic 2D spin-3/2 holes leads to a novel Hall effect linear in an applied in-plane magnetic field B_x. There is no Lorentz force hence no ordinary Hall effect, while all disorder contributions vanish to leading order in B_x. This…
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The ordinary Hall effect is driven by the Lorentz force, while its anomalous counterpart occurs in ferromagnets. Here we show that the Berry curvature monopole of non-magnetic 2D spin-3/2 holes leads to a novel Hall effect linear in an applied in-plane magnetic field B_x. There is no Lorentz force hence no ordinary Hall effect, while all disorder contributions vanish to leading order in B_x. This intrinsic phenomenon, which we term the anomalous planar Hall effect (APHE), provides a non-quantized footprint of topological transport directly accessible in p-type semiconductors.
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Submitted 18 November, 2020;
originally announced November 2020.
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Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits
Authors:
Zhanning Wang,
Elizabeth Marcellina,
A. R. Hamilton,
James H. Cullen,
Sven Rogge,
Joe Salfi,
Dimitrie Culcer
Abstract:
Strong spin-orbit interactions make hole quantum dots central to the quest for electrical spin qubit manipulation enabling fast, low-power, scalable quantum computation. Yet it is important to establish to what extent spin-orbit coupling exposes qubits to electrical noise, facilitating decoherence. Here, taking Ge as an example, we show that group IV gate-defined hole spin qubits generically exhib…
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Strong spin-orbit interactions make hole quantum dots central to the quest for electrical spin qubit manipulation enabling fast, low-power, scalable quantum computation. Yet it is important to establish to what extent spin-orbit coupling exposes qubits to electrical noise, facilitating decoherence. Here, taking Ge as an example, we show that group IV gate-defined hole spin qubits generically exhibit optimal operation points, defined by the top gate electric field, at which they are both fast and long-lived: the dephasing rate vanishes to first order in electric field noise along all directions in space, the electron dipole spin resonance strength is maximised, while relaxation is drastically reduced at small magnetic fields. The existence of optimal operation points is traced to group IV crystal symmetry and properties of the Rashba spin-orbit interaction unique to spin-3/2 systems. Our results overturn the conventional wisdom that fast operation implies reduced lifetimes, and suggest group IV hole spin qubits as ideal platforms for ultra-fast, highly coherent scalable quantum computing.
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Submitted 7 April, 2021; v1 submitted 25 November, 2019;
originally announced November 2019.
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Non-linear spin filter for non-magnetic materials at zero magnetic field
Authors:
E. Marcellina,
A. Srinivasan,
F. Nichele,
P. Stano,
D. A. Ritchie,
I. Farrer,
Dimitrie Culcer,
A. R. Hamilton
Abstract:
The ability to convert spin accumulation to charge currents is essential for applications in spintronics. In semiconductors, spin-to-charge conversion is typically achieved using the inverse spin Hall effect or using a large magnetic field. Here we demonstrate a general method that exploits the non-linear interactions between spin and charge currents to perform all-electrical, rapid and non-invasi…
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The ability to convert spin accumulation to charge currents is essential for applications in spintronics. In semiconductors, spin-to-charge conversion is typically achieved using the inverse spin Hall effect or using a large magnetic field. Here we demonstrate a general method that exploits the non-linear interactions between spin and charge currents to perform all-electrical, rapid and non-invasive detection of spin accumulation without the need for a magnetic field. We demonstrate the operation of this technique with ballistic GaAs holes as a model system with strong spin-orbit coupling, in which a quantum point contact provides the non-linear energy filter. This approach is generally applicable to electron and hole systems with strong spin orbit coupling.
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Submitted 22 October, 2020; v1 submitted 2 July, 2019;
originally announced July 2019.
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Signatures of quantum mechanical Zeeman effect in classical transport due to topological properties of two-dimensional spin-3/2 holes
Authors:
E. Marcellina,
Pankaj Bhalla,
A. R. Hamilton,
Dimitrie Culcer
Abstract:
The Zeeman interaction is a quantum mechanical effect that underpins spin-based quantum devices such as spin qubits. Typically, identification of the Zeeman interaction needs a large out-of-plane magnetic field coupled with ultralow temperatures, which limits the practicality of spin-based devices. However, in two-dimensional (2D) semiconductor holes, the strong spin-orbit interaction causes the Z…
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The Zeeman interaction is a quantum mechanical effect that underpins spin-based quantum devices such as spin qubits. Typically, identification of the Zeeman interaction needs a large out-of-plane magnetic field coupled with ultralow temperatures, which limits the practicality of spin-based devices. However, in two-dimensional (2D) semiconductor holes, the strong spin-orbit interaction causes the Zeeman interaction to couple the spin, the magnetic field, and the momentum, and has terms with different winding numbers. In this work, we demonstrate a physical mechanism by which the Zeeman terms can be detected in classical transport. The effect we predict is very strong, and tunable by means of both the density and the in-plane magnetic field. It is a direct signature of the topological properties of the 2D hole system, and a manifestation in classical transport of an effect stemming from relativistic quantum mechanics. We discuss experimental observation and implications for quantum technologies.
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Submitted 22 February, 2020; v1 submitted 27 June, 2019;
originally announced June 2019.
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Electrical control of the Zeeman spin splitting in two-dimensional hole systems
Authors:
Elizabeth Marcellina,
Ashwin Srinivasan,
Dmitry Miserev,
Andrew Croxall,
David Ritchie,
Ian Farrer,
Oleg Sushkov,
Dimitrie Culcer,
Alex Hamilton
Abstract:
Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad applications ranging from spintronics to quantum computation. Using a two-dimensional hole system in a GaAs quantum well, we demonstrate a new mechanism of electrically controlling the Zeeman splitting, which is achieved through altering the hole wave vector $k$. We find a threefold enhancement of the…
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Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad applications ranging from spintronics to quantum computation. Using a two-dimensional hole system in a GaAs quantum well, we demonstrate a new mechanism of electrically controlling the Zeeman splitting, which is achieved through altering the hole wave vector $k$. We find a threefold enhancement of the in-plane $g-$factor $g_{\parallel}(k)$. We introduce a new method for quantifying the Zeeman splitting from magnetoresistance measurements, since the conventional tilted field approach fails for two-dimensional systems with strong spin-orbit coupling. Finally, we show that the Rashba spin-orbit interaction suppresses the in-plane Zeeman interaction at low magnetic fields. The ability to control the Zeeman splitting with electric fields opens up new possibilities for future quantum spin-based devices, manipulating non-Abelian geometric phases, and realising Majorana systems in $p-$type superconductor systems.
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Submitted 28 June, 2018;
originally announced June 2018.
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Theory of Hole-Spin Qubits in Strained Germanium Quantum Dots
Authors:
L. A. Terrazos,
E. Marcellina,
Zhanning Wang,
S. N. Coppersmith,
Mark Friesen,
A. R. Hamilton,
Xuedong Hu,
Belita Koiller,
A. L. Saraiva,
Dimitrie Culcer,
Rodrigo B. Capaz
Abstract:
We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting between the light and heavy hole bands, a very light ($\sim$0.05$\, m_0$) in-plane effective mass, consistent with higher mobilities and tunnel rates, and larger d…
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We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting between the light and heavy hole bands, a very light ($\sim$0.05$\, m_0$) in-plane effective mass, consistent with higher mobilities and tunnel rates, and larger dot sizes that could ameliorate constraints on device fabrication. Compared to electrons in quantum dots, hole qubits do not suffer from the presence of nearby quantum levels (e.g., valley states) that can compete with spins as qubits. The strong spin-orbit coupling in Ge quantum wells may be harnessed to implement electric-dipole spin resonance, leading to gate times of several nanoseconds for single-qubit rotations. The microscopic mechanism of this spin-orbit coupling is discussed, along with its implications for quantum gates based on electric-dipole spin resonance, stressing the importance of coupling terms that arise from the underlying cubic crystal field. Our results provide a theoretical foundation for recent experimental advances in Ge hole-spin qubits.
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Submitted 30 January, 2021; v1 submitted 27 March, 2018;
originally announced March 2018.
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Strong influence of spin-orbit coupling on magnetotransport in two-dimensional hole systems
Authors:
Hong Liu,
Elizabeth Marcellina,
Alexander R. Hamilton,
Dimitrie Culcer
Abstract:
With a view to electrical spin manipulation and quantum computing applications, recent significant attention has been devoted to semiconductor hole systems, which have very strong spin-orbit interactions. However, experimentally measuring, identifying, and quantifying spin-orbit coupling effects in transport, such as electrically-induced spin polarizations and spin-Hall currents, are challenging.…
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With a view to electrical spin manipulation and quantum computing applications, recent significant attention has been devoted to semiconductor hole systems, which have very strong spin-orbit interactions. However, experimentally measuring, identifying, and quantifying spin-orbit coupling effects in transport, such as electrically-induced spin polarizations and spin-Hall currents, are challenging. Here we show that the magnetotransport properties of two dimensional (2D) hole systems display strong signatures of the spin-orbit interaction. Specifically, the low-magnetic field Hall coefficient and longitudinal conductivity contain a contribution that is second order in the spin-orbit interaction coefficient and is non-linear in the carrier number density. We propose an appropriate experimental setup to probe these spin-orbit dependent magnetotransport properties, which will permit one to extract the spin-orbit coefficient directly from the magnetotransport.
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Submitted 24 August, 2017; v1 submitted 23 August, 2017;
originally announced August 2017.
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Spin blockade as a probe of Zeeman interactions in hole quantum dots
Authors:
Jo-Tzu Hung,
Elizabeth Marcellina,
Bin Wang,
Alexander R. Hamilton,
Dimitrie Culcer
Abstract:
Spin-orbit coupling is key to all-electrical control of quantum-dot spin qubits, and is frequently stronger for holes than for electrons. Here we investigate Pauli spin blockade for two heavy holes in a gated double quantum dot in an in-plane magnetic field. The interplay of the complex Zeeman and spin-orbit couplings causes a blockade leakage current anisotropic in the field direction. The period…
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Spin-orbit coupling is key to all-electrical control of quantum-dot spin qubits, and is frequently stronger for holes than for electrons. Here we investigate Pauli spin blockade for two heavy holes in a gated double quantum dot in an in-plane magnetic field. The interplay of the complex Zeeman and spin-orbit couplings causes a blockade leakage current anisotropic in the field direction. The period of the anisotropic leakage is critically dependent on the relative magnitude of Zeeman interaction terms linear and cubic in the magnetic field. The current and singlet-triplet exchange splitting can be effectively adjusted by an appropriate choice of field direction, providing a simple control variable for quantum information processing and a way of tailoring magnetic interactions in hole spin qubits.
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Submitted 6 October, 2016;
originally announced October 2016.
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Spin-orbit interactions in inversion-asymmetric 2D hole systems: a variational analysis
Authors:
E. Marcellina,
A. R. Hamilton,
R. Winkler,
Dimitrie Culcer
Abstract:
We present an in-depth study of the spin-orbit (SO) interactions occurring in inversion-asymmetric two-dimensional hole gases at semiconductor heterointerfaces. We focus on common semiconductors such as GaAs, InAs, InSb, Ge, and Si. We develop a semi-analytical variational method to quantify SO interactions, accounting for both structure inversion asymmetry (SIA) and bulk inversion asymmetry (BIA)…
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We present an in-depth study of the spin-orbit (SO) interactions occurring in inversion-asymmetric two-dimensional hole gases at semiconductor heterointerfaces. We focus on common semiconductors such as GaAs, InAs, InSb, Ge, and Si. We develop a semi-analytical variational method to quantify SO interactions, accounting for both structure inversion asymmetry (SIA) and bulk inversion asymmetry (BIA). Under certain circumstances, using the Schrieffer-Wolff (SW) transformation, the dispersion of the ground state heavy hole subbands can be written as $E(k) = A k^2 - B k^4 \pm C k^3$ where $A$, $B$, and $C$ are material- and structure-dependent coefficients. We provide a simple method of calculating the parameters $A$, $B$, and $C$, yet demonstrate that the simple SW approximation leading to a SIA (Rashba) spin splitting $\propto k^3$ frequently breaks down. We determine the parameter regimes at which this happens for the materials above and discuss a convenient semi-analytical method to obtain the correct spin splitting, effective masses, Fermi level, and subband occupancy, together with their dependence on the charge density, dopant type, and dopant concentration for both inversion and accumulation layers. Our results are in good agreement with fully numerical calculations as well as with experimental findings. They suggest that a naive application of the simple cubic Rashba model is of limited use in common heterostructures, as well as quantum dots. Finally, we find that for the single heterojunctions studied here the magnitudes of BIA terms are always much smaller than those of SIA terms.
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Submitted 20 February, 2017; v1 submitted 29 April, 2016;
originally announced April 2016.
