Showing 1–8 of 8 results for author: Mannix, A J

Quantitative determination of twist angle and strain in Van der Waals moiré superlattices

Authors: Steven J. Tran, Jan-Lucas Uslu, Mihir Pendharkar, Joe Finney, Aaron L. Sharpe, Marisa Hocking, Nathan J. Bittner, Kenji Watanabe, Takashi Taniguchi, Marc A. Kastner, Andrew J. Mannix, David Goldhaber-Gordon

Abstract: Scanning probe techniques are popular, non-destructive ways to visualize the real space structure of Van der Waals moirés. The high lateral spatial resolution provided by these techniques enables extracting the moiré lattice vectors from a scanning probe image. We have found that the extracted values, while precise, are not necessarily accurate. Scan-to-scan variations in the behavior of the piezo… ▽ More Scanning probe techniques are popular, non-destructive ways to visualize the real space structure of Van der Waals moirés. The high lateral spatial resolution provided by these techniques enables extracting the moiré lattice vectors from a scanning probe image. We have found that the extracted values, while precise, are not necessarily accurate. Scan-to-scan variations in the behavior of the piezos which drive the scanning probe, and thermally-driven slow relative drift between probe and sample, produce systematic errors in the extraction of lattice vectors. In this Letter, we identify the errors and provide a protocol to correct for them. Applying this protocol to an ensemble of ten successive scans of near-magic-angle twisted bilayer graphene, we are able to reduce our errors in extracting lattice vectors to less than 1%. This translates to extracting twist angles with a statistical uncertainty less than 0.001° and uniaxial heterostrain with uncertainty on the order of 0.002%. △ Less

Submitted 12 June, 2024; originally announced June 2024.

Comments: 20 pages including supplementary material and 3 main figures

Deterministic fabrication of graphene hexagonal boron nitride moiré superlattices

Authors: Rupini V. Kamat, Aaron L. Sharpe, Mihir Pendharkar, Jenny Hu, Steven J. Tran, Gregory Zaborski Jr., Marisa Hocking, Joe Finney, Kenji Watanabe, Takashi Taniguchi, Marc A. Kastner, Andrew J. Mannix, Tony Heinz, David Goldhaber-Gordon

Abstract: The electronic properties of moiré heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graphene (TBG) commonly shows superconductivity, yet a TBG sample with one of the graphene layers rotationally aligned to a hexagonal Boron Nitride (hBN) cladding layer provided the first experimental observation of orbital fe… ▽ More The electronic properties of moiré heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graphene (TBG) commonly shows superconductivity, yet a TBG sample with one of the graphene layers rotationally aligned to a hexagonal Boron Nitride (hBN) cladding layer provided the first experimental observation of orbital ferromagnetism. To create samples with aligned graphene/hBN, researchers often align edges of exfoliated flakes that appear straight in optical micrographs. However, graphene or hBN can cleave along either zig-zag or armchair lattice directions, introducing a 30 degree ambiguity in the relative orientation of two flakes. By characterizing the crystal lattice orientation of exfoliated flakes prior to stacking using Raman and second-harmonic generation for graphene and hBN, respectively, we unambiguously align monolayer graphene to hBN at a near-0 degree, not 30 degree, relative twist angle. We confirm this alignment by torsional force microscopy (TFM) of the graphene/hBN moiré on an open-face stack, and then by cryogenic transport measurements, after full encapsulation with a second, non-aligned hBN layer. This work demonstrates a key step toward systematically exploring the effects of the relative twist angle between dissimilar materials within moiré heterostructures. △ Less

Submitted 28 May, 2024; originally announced May 2024.

Comments: 40 pages, 15 figures

Mobility and Threshold Voltage Extraction in Transistors with Gate-Voltage-Dependent Contact Resistance

Authors: Robert K. A. Bennett, Lauren Hoang, Connor Cremers, Andrew J. Mannix, Eric Pop

Abstract: The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. This… ▽ More The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. This error can be minimized by measuring transistors at high gate-source bias, |$V_\mathrm{gs}$|, but this regime is often inaccessible in emerging devices that suffer from high contact resistance or early gate dielectric breakdown. Here, we propose a method of extracting mobility in transistors with gate-dependent contact resistance that does not require operation at high |$V_\mathrm{gs}$|, enabling accurate mobility extraction even in emerging transistors with strong contact gating. Our approach relies on updating the transfer length method (TLM) and can achieve <10% error even in regimes where conventional techniques overestimate mobility by >2$\times$. △ Less

Submitted 19 June, 2024; v1 submitted 29 April, 2024; originally announced April 2024.

Comments: Corrected values tabulated in Figure 2d (surrounding discussion/conclusions unchanged); updated discussion surrounding Monte Carlo approach for error propagation; corrected typos

Thermal relaxation of strain and twist in ferroelectric hexagonal boron nitride moiré interfaces

Authors: Marisa Hocking, Christina E. Henzinger, Steven Tran, Mihir Pendharkar, Nathan J. Bittner, Kenji Watanabe, Takashi Taniguchi, David Goldhaber-Gordon, Andrew J. Mannix

Abstract: New properties can arise at van der Waals (vdW) interfaces hosting a moiré pattern generated by interlayer twist and strain. However, achieving precise control of interlayer twist/strain remains an ongoing challenge in vdW heterostructure assembly, and even subtle variation in these structural parameters can create significant changes in the moiré period and emergent properties. Characterizing the… ▽ More New properties can arise at van der Waals (vdW) interfaces hosting a moiré pattern generated by interlayer twist and strain. However, achieving precise control of interlayer twist/strain remains an ongoing challenge in vdW heterostructure assembly, and even subtle variation in these structural parameters can create significant changes in the moiré period and emergent properties. Characterizing the rate of interlayer twist/strain relaxation during thermal annealing is critical to establish a thermal budget for vdW heterostructure construction and may provide a route to improve the homogeneity of the interface or to control its final state. Here, we characterize the spatial and temporal dependence of interfacial twist and strain relaxation in marginally-twisted hBN/hBN interfaces heated under conditions relevant to vdW heterostructure assembly and typical sample annealing. We find that the ferroelectric hBN/hBN moiré relaxes minimally during annealing in air at typical assembly temperatures of 170°C. However, at 400°C, twist angle relaxes significantly, accompanied by a decrease in spatial uniformity. Uniaxial heterostrain initially increases and then decreases over time, becoming increasingly non-uniform in direction. Structural irregularities such as step edges, contamination bubbles, or contact with the underlying substrate result in local inhomogeneity in the rate of relaxation. △ Less

Submitted 14 March, 2024; originally announced March 2024.

Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition

Authors: Zhepeng Zhang, Lauren Hoang, Marisa Hocking, Jenny Hu, Gregory Zaborski Jr., Pooja Reddy, Johnny Dollard, David Goldhaber-Gordon, Tony F. Heinz, Eric Pop, Andrew J. Mannix

Abstract: Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for new excitonic physics and next-generation electronics, creating a strong demand to understand their growth, do**, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly cry… ▽ More Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for new excitonic physics and next-generation electronics, creating a strong demand to understand their growth, do**, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled do**. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS$_2$ growth with tunable morphologies - from separated single-crystal domains to continuous monolayer films - on a variety of substrates, including sapphire, SiO$_2$, and Au. These WS$_2$ films exhibit narrow neutral exciton photoluminescence linewidths down to 33 meV and room-temperature mobility up to 34 - 36 cm$^2$V$^-$$^1$s$^-$$^1$). Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS$_2$, MoxW$_1$$_-$$_x$S$_2$ alloys, and in-plane WS$_2$-MoS$_2$ heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale. △ Less

Submitted 6 March, 2024; originally announced March 2024.

Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides

Authors: Jerry A. Yang, Robert K. A. Bennett, Lauren Hoang, Zhepeng Zhang, Kamila J. Thompson, Antonios Michail, John Parthenios, Konstantinos Papagelis, Andrew J. Mannix, Eric Pop

Abstract: Strain engineering can modulate the material properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron mobility of monolayer MoS$_2$, a 2D semiconductor, but the effects of biaxial strain on charge transport are not well-understood in 2D semiconductors. Here, we us… ▽ More Strain engineering can modulate the material properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron mobility of monolayer MoS$_2$, a 2D semiconductor, but the effects of biaxial strain on charge transport are not well-understood in 2D semiconductors. Here, we use biaxial tensile strain on flexible substrates to probe the electron mobility in monolayer WS$_2$ and MoS$_2$ transistors. This approach experimentally achieves ~2x higher on-state current and mobility with ~0.3% applied biaxial strain in WS$_2$, the highest mobility improvement at the lowest strain reported to date. We also examine the mechanisms behind this improvement through density functional theory simulations, concluding that the enhancement is primarily due to reduced intervalley electron-phonon scattering. These results underscore the role of strain engineering 2D semiconductors for flexible electronics, sensors, integrated circuits, and other optoelectronic applications. △ Less

Submitted 28 November, 2023; v1 submitted 19 September, 2023; originally announced September 2023.

Comments: Corrected author list

Torsional Force Microscopy of Van der Waals Moirés and Atomic Lattices

Authors: Mihir Pendharkar, Steven J. Tran, Gregory Zaborski Jr., Joe Finney, Aaron L. Sharpe, Rupini V. Kamat, Sandesh S. Kalantre, Marisa Hocking, Nathan J. Bittner, Kenji Watanabe, Takashi Taniguchi, Bede Pittenger, Christina J. Newcomb, Marc A. Kastner, Andrew J. Mannix, David Goldhaber-Gordon

Abstract: In a stack of atomically-thin Van der Waals layers, introducing interlayer twist creates a moiré superlattice whose period is a function of twist angle. Changes in that twist angle of even hundredths of a degree can dramatically transform the system's electronic properties. Setting a precise and uniform twist angle for a stack remains difficult, hence determining that twist angle and map** its s… ▽ More In a stack of atomically-thin Van der Waals layers, introducing interlayer twist creates a moiré superlattice whose period is a function of twist angle. Changes in that twist angle of even hundredths of a degree can dramatically transform the system's electronic properties. Setting a precise and uniform twist angle for a stack remains difficult, hence determining that twist angle and map** its spatial variation is very important. Techniques have emerged to do this by imaging the moiré, but most of these require sophisticated infrastructure, time-consuming sample preparation beyond stack synthesis, or both. In this work, we show that Torsional Force Microscopy (TFM), a scanning probe technique sensitive to dynamic friction, can reveal surface and shallow subsurface structure of Van der Waals stacks on multiple length scales: the moirés formed between bi-layers of graphene and between graphene and hexagonal boron nitride (hBN), and also the atomic crystal lattices of graphene and hBN. In TFM, torsional motion of an AFM cantilever is monitored as it is actively driven at a torsional resonance while a feedback loop maintains contact at a set force with the sample surface. TFM works at room temperature in air, with no need for an electrical bias between the tip and the sample, making it applicable to a wide array of samples. It should enable determination of precise structural information including twist angles and strain in moiré superlattices and crystallographic orientation of VdW flakes to support predictable moiré heterostructure fabrication. △ Less

Submitted 20 December, 2023; v1 submitted 17 August, 2023; originally announced August 2023.

Comments: 31 pages, 14 figures and 1 table including supplementary materials

Report number: 121 (10) e2314083121

Journal ref: PNAS (2024)

Torsional Periodic Lattice Distortions and Diffraction of Twisted 2D Materials

Authors: Suk Hyun Sung, Yin Min Goh, Hyobin Yoo, Rebecca Engelke, Hongchao Xie, Kuan Zhang, Zidong Li, Andrew Ye, Parag B. Deotare, Ellad B. Tadmor, Andrew J. Mannix, Jiwoong Park, Liuyan Zhao, Philip Kim, Robert Hovden

Abstract: Twisted 2D materials form complex moiré structures that spontaneously reduce symmetry through picoscale deformation within a mesoscale lattice. We show twisted 2D materials contain a torsional displacement field comprised of three transverse periodic lattice distortions (PLD). The torsional PLD amplitude provides a single order parameter that concisely describes the structural complexity of twiste… ▽ More Twisted 2D materials form complex moiré structures that spontaneously reduce symmetry through picoscale deformation within a mesoscale lattice. We show twisted 2D materials contain a torsional displacement field comprised of three transverse periodic lattice distortions (PLD). The torsional PLD amplitude provides a single order parameter that concisely describes the structural complexity of twisted bilayer moirés. Moreover, the structure and amplitude of a torsional periodic lattice distortion is quantifiable using rudimentary electron diffraction methods sensitive to reciprocal space. In twisted bilayer graphene, the torsional PLD begins to form at angles below 3.89° and the amplitude reaches 8 pm around the magic angle of 1.1°. At extremely low twist angles (e.g. below 0.25°) the amplitude increases and additional PLD harmonics arise to expand Bernal stacked domains separated by well defined solitonic boundaries. The torsional distortion field in twisted bilayer graphene is analytically described and has an upper bound of 22.6 pm. Similar torsional distortions are observed in twisted WS$_2$, CrI$_3$, and WSe$_2$ / MoSe$_2$. △ Less

Submitted 28 December, 2022; v1 submitted 12 March, 2022; originally announced March 2022.

Journal ref: Nature Communications 13, 7826 (2022)