-
Vector-substrate-based Josephson junctions
Authors:
Yu-Jung Wu,
Martin Hack,
Katja Wurster,
Simon Koch,
Reinhold Kleiner,
Dieter Koelle,
Jochen Mannhart,
Varun Harbola
Abstract:
We present a way to We present a way to fabricate bicrystal Josephson junctions of high-Tc cuprate superconductors that does not require bulk bicrystalline substrates. Based on vector substrate technology, this novel approach makes use of a few tens-of-nanometers-thick bicrystalline membranes transferred onto conventional substrates.We demonstrate 24° YBa2Cu3O7-x Josephson junctions fabricated on…
▽ More
We present a way to We present a way to fabricate bicrystal Josephson junctions of high-Tc cuprate superconductors that does not require bulk bicrystalline substrates. Based on vector substrate technology, this novel approach makes use of a few tens-of-nanometers-thick bicrystalline membranes transferred onto conventional substrates.We demonstrate 24° YBa2Cu3O7-x Josephson junctions fabricated on sapphire single crystals by utilizing 10-nm-thick bicrystalline membranes of SrTiO3. This technique allows one to manufacture bicrystalline Josephson junctions of high-Tc superconductors on a large variety of bulk substrate materials, providing novel degrees of freedom in designing the junctions and their electronic properties. It furthermore offers the capability to replace the fabrication of bulk bicrystalline substrates with thin-film growth methods
△ Less
Submitted 21 April, 2024;
originally announced April 2024.
-
Interface Design Beyond Epitaxy: Oxide Heterostructures Comprising Symmetry-forbidden Interfaces
Authors:
Hongguang Wang,
Varun Harbola,
Yu-Jung Wu,
Peter A. van Aken,
Jochen Mannhart
Abstract:
Epitaxial growth of thin-film heterostructures is generally considered the most successful procedure to obtain interfaces of excellent structural and electronic quality between three-dimensional materials. However, these interfaces can only join material systems with crystal lattices of matching symmetries and lattice constants. We present a novel category of interfaces, the fabrication of which i…
▽ More
Epitaxial growth of thin-film heterostructures is generally considered the most successful procedure to obtain interfaces of excellent structural and electronic quality between three-dimensional materials. However, these interfaces can only join material systems with crystal lattices of matching symmetries and lattice constants. We present a novel category of interfaces, the fabrication of which is membrane-based and does not require epitaxial growth. These interfaces therefore overcome limitations imposed by epitaxy. Leveraging the additional degrees of freedom gained, we demonstrate atomically clean interfaces between three-fold symmetric sapphire and four-fold symmetric SrTiO3. Atomic-resolution imaging reveals structurally well-defined interfaces with a novel moiré-type reconstruction.
△ Less
Submitted 13 March, 2024;
originally announced March 2024.
-
Magnetotransport Properties of Epitaxial Films and Hall Bar Devices of the Correlated Layered Ruthenate Sr$_3$Ru$_2$O$_7$
Authors:
Prosper Ngabonziza,
Anand Sharma,
Anna Scheid,
Sethulakshmi Sajeev,
Peter A. van Aken,
Jochen Mannhart
Abstract:
For epitaxial Sr$_3$Ru$_2$O$_7$ films grown by pulsed laser deposition, we report a combined structural and magnetotransport study of thin films and Hall bar devices patterned side-by-side on the same film. Structural properties of these films are investigated using X-ray diffraction and high-resolution transmission electron microscopy, and confirm that these films are epitaxially oriented and nea…
▽ More
For epitaxial Sr$_3$Ru$_2$O$_7$ films grown by pulsed laser deposition, we report a combined structural and magnetotransport study of thin films and Hall bar devices patterned side-by-side on the same film. Structural properties of these films are investigated using X-ray diffraction and high-resolution transmission electron microscopy, and confirm that these films are epitaxially oriented and nearly phase pure. For magnetic fields applied along the $c-$axis, a positive magnetoresistance of 10\% is measured for unpatterned Sr$_3$Ru$_2$O$_7$ films, whereas for patterned Hall bar devices of channel widths of $10$ and $5\, μ$m, magnetoresistance values of 40\% and 140\% are found, respectively. These films show switching behaviors from positive to negative magnetoresistance that are controlled by the direction of the applied magnetic field. The present results provide a promising route for achieving stable epitaxial synthesis of intermediate members of correlated layered strontium ruthenates, and for the exploration of device physics in thin films of these compounds.
△ Less
Submitted 18 March, 2024; v1 submitted 13 October, 2023;
originally announced October 2023.
-
Exact description of transport and non-reciprocity in monitored quantum devices
Authors:
João Ferreira,
Tony **,
Jochen Mannhart,
Thierry Giamarchi,
Michele Filippone
Abstract:
We study non-interacting fermionic systems undergoing continuous monitoring and driven by biased reservoirs. Averaging over the measurement outcomes, we derive exact formulas for the particle and heat flows in the system. We show that these currents feature competing elastic and inelastic components, which depend non-trivially on the monitoring strength $γ$. We highlight that monitor-induced inela…
▽ More
We study non-interacting fermionic systems undergoing continuous monitoring and driven by biased reservoirs. Averaging over the measurement outcomes, we derive exact formulas for the particle and heat flows in the system. We show that these currents feature competing elastic and inelastic components, which depend non-trivially on the monitoring strength $γ$. We highlight that monitor-induced inelastic processes lead to non-reciprocal currents, allowing to extract work from measurements without active feedback control. We illustrate our formalism with two distinct monitoring schemes providing measurement-induced power or cooling.~Optimal performances are found for values of the monitoring strength $γ$ which are hard to address with perturbative approaches.
△ Less
Submitted 28 June, 2023;
originally announced June 2023.
-
Alex Müller, the High-Tc Field-Effect Transistor and Electric-Field Gated Quantum Materials
Authors:
J. Mannhart
Abstract:
Alex Müller and Georg Bednorz are widely recognized for their trailblazing discovery of high-temperature superconductivity and their groundbreaking research on SrTiO3. In comparison, their substantial contributions to inventing the high-Tc superconducting field-effect transistor remain relatively unknown. Nevertheless, their efforts were crucial in develo** the electric field effect into a valua…
▽ More
Alex Müller and Georg Bednorz are widely recognized for their trailblazing discovery of high-temperature superconductivity and their groundbreaking research on SrTiO3. In comparison, their substantial contributions to inventing the high-Tc superconducting field-effect transistor remain relatively unknown. Nevertheless, their efforts were crucial in develo** the electric field effect into a valuable tool for studying a broad spectrum of complex materials. This article provides a brief overview of these developments and of the current status in this field, with a particular focus on Alex Müller's visionary role in advancing the field following the discovery of high-temperature superconductivity.
△ Less
Submitted 12 June, 2023;
originally announced June 2023.
-
Employing High-temperature-grown SrZrO$_3$ Buffer to Enhance the Electron Mobility in La:BaSnO$_3$-based Heterostructures
Authors:
Prosper Ngabonziza,
Jisung Park,
Wilfried Sigle,
Peter A. van Aken,
Jochen Mannhart,
Darrell G. Schlom
Abstract:
We report a synthetic route to achieve high electron mobility at room temperature in epitaxial La:BaSnO$_3$/SrZrO$_3$ heterostructures prepared on several oxide substrates. Room-temperature mobilities of 157, 145, and 143 cm$^2$V$^{-1}$s$^{-1}$ are achieved for heterostructures grown on DyScO$_3$ (110), MgO (001), and TbScO$_3$ (110) crystalline substrates, respectively. This is realized by first…
▽ More
We report a synthetic route to achieve high electron mobility at room temperature in epitaxial La:BaSnO$_3$/SrZrO$_3$ heterostructures prepared on several oxide substrates. Room-temperature mobilities of 157, 145, and 143 cm$^2$V$^{-1}$s$^{-1}$ are achieved for heterostructures grown on DyScO$_3$ (110), MgO (001), and TbScO$_3$ (110) crystalline substrates, respectively. This is realized by first employing pulsed laser deposition to grow at very high temperature the SrZrO$_3$ buffer layer to reduce dislocation density in the active layer, then followed by the epitaxial growth of an overlaying La:BaSnO$_3$ active layer by molecular-beam epitaxy. Structural properties of these heterostructures are investigated, and the extracted upper limit of threading dislocations is well below $1.0\times 10^{10}$cm$^{-2}$ for buffered films on DyScO$_3$, MgO, and TbScO$_3$ substrates. The present results provide a promising route towards achieving high mobility in buffered La:BaSnO$_3$ films prepared on most, if not all, oxide substrates with large compressive or tensile lattice mismatches to the film.
△ Less
Submitted 13 June, 2023; v1 submitted 23 February, 2023;
originally announced February 2023.
-
Combined Spectroscopy and Electrical Characterization of La:BaSnO$_\text{3}$ Thin Films and Heterostructures
Authors:
Arnaud P. Nono Tchiomo,
Emanuela Carleschi,
Aletta R. E. Prinsloo,
Wilfried Sigle,
Peter A. van Aken,
Jochen Mannhart,
Prosper Ngabonziza,
Bryan P. Doyle
Abstract:
For La-doped BaSnO$_\text{3}$ thin films grown by pulsed laser deposition, we combine chemical surface characterization and electronic transport studies to probe the evolution of electronic states in the band structure for different La-do** content. Systematic analyses of spectroscopic data based on fitting the core electron line shapes help to unravel the composition of the surface as well as t…
▽ More
For La-doped BaSnO$_\text{3}$ thin films grown by pulsed laser deposition, we combine chemical surface characterization and electronic transport studies to probe the evolution of electronic states in the band structure for different La-do** content. Systematic analyses of spectroscopic data based on fitting the core electron line shapes help to unravel the composition of the surface as well as the dynamics associated with increasing do**. This dynamics is observed with a more pronounced signature in the Sn 3d core level, which exhibits an increasing asymmetry to the high binding energy side of the peak with increasing electron density. The present results expand the current understanding of the interplay between the do** concentration, electronic band structure and transport properties of epitaxial La:BaSnO$_\text{3}$ films.
△ Less
Submitted 28 September, 2022; v1 submitted 16 May, 2022;
originally announced May 2022.
-
An optimized TEM specimen preparation method of quantum nanostructures
Authors:
Hongguang Wang,
Vesna Srot,
Bernhard Fenk,
Gennadii Laskin,
Jochen Mannhart,
Peter A. van Aken
Abstract:
Electron transparent TEM lamella with unaltered microstructure and chemistry is the prerequisite for successful TEM explorations. Currently, TEM specimen preparation of quantum nanostructures, such as quantum dots (QDs), remains a challenge. In this work, we optimize the sample-preparation routine for achieving high-quality TEM specimens consisting of SrRuO3 (SRO) QDs grown on SrTiO3 (STO) substra…
▽ More
Electron transparent TEM lamella with unaltered microstructure and chemistry is the prerequisite for successful TEM explorations. Currently, TEM specimen preparation of quantum nanostructures, such as quantum dots (QDs), remains a challenge. In this work, we optimize the sample-preparation routine for achieving high-quality TEM specimens consisting of SrRuO3 (SRO) QDs grown on SrTiO3 (STO) substrates. We demonstrate that a combination of ion-beam-milling techniques can produce higher-quality specimens of quantum nanostructures compared to TEM specimens prepared by a combination of tripod polishing followed by Ar+ ion milling. In the proposed method, simultaneous imaging in a focused ion-beam device enables accurate positioning of the QD regions and assures the presence of dots in the thin lamella by cutting the sample inclined by 5° relative to the dots array. Furthermore, the preparation of TEM lamellae with several large electron-transparent regions that are separated by thicker walls effectively reduces the bending of the specimen and offers broad thin areas. The final use of a NanoMill efficiently removes the amorphous layer without introducing any additional damage.
△ Less
Submitted 8 February, 2022;
originally announced February 2022.
-
Tunable Magnetic Anisotropy in Patterned SrRuO3 Quantum Structures: Competition between Lattice Anisotropy and Oxygen Octahedral Rotation
Authors:
Hongguang Wang,
Gennadii Laskin,
Weiwei He,
Hans Boschker,
Min Yi,
Jochen Mannhart,
Peter A. van Aken
Abstract:
Artificial perovskite-oxide nanostructures possess intriguing magnetic properties due to their tailorable electron-electron interactions, which are extremely sensitive to the oxygen coordination environment. To date, perovskite-oxide nanodots with sizes below 50 nm have rarely been reported. Furthermore, the oxygen octahedral distortion and its relation to magnetic properties in perovskite oxide n…
▽ More
Artificial perovskite-oxide nanostructures possess intriguing magnetic properties due to their tailorable electron-electron interactions, which are extremely sensitive to the oxygen coordination environment. To date, perovskite-oxide nanodots with sizes below 50 nm have rarely been reported. Furthermore, the oxygen octahedral distortion and its relation to magnetic properties in perovskite oxide nanodots remain unexplored yet. Here, we have studied the magnetic anisotropy in patterned SrRuO3 (SRO) nanodots as small as 30 nm while performing atomic-resolution electron microscopy and spectroscopy to directly visualize the constituent elements, in particular oxygen ions. We observe that the magnetic anisotropy and RuO6 octahedra distortion in SRO nanodots are both nanodots' size-dependent but remain unchanged in the first 3-unit-cell interfacial SRO monolayers regardless of the dots' size. Combined with the first principle calculations, we unravel a unique structural mechanism behind the nanodots' size-dependent magnetic anisotropy in SRO nanodots, sugguesting that the competition between lattice anisotropy and oxygen octahedral rotation mediates anisotropic exchange interactions in SRO nanodots. These findings demonstrate a new avenue towards tuning magnetic properties of correlated perovskite oxides and imply that patterned nanodots could be a promising playground for engineering emergent functional behaviors.
△ Less
Submitted 8 February, 2022;
originally announced February 2022.
-
Thermal laser evaporation of elements from across the periodic table
Authors:
Thomas J. Smart,
Jochen Mannhart,
Wolfgang Braun
Abstract:
We propose and demonstrate that thermal laser evaporation can be applied to all solid, non-radioactive elements in the periodic table. By depositing thin films, we achieve growth rates exceeding 1 angstrom/s with output laser powers less than 500 W, using identical beam parameters for many different elements. The source temperature is found to vary linearly with laser power within the examined pow…
▽ More
We propose and demonstrate that thermal laser evaporation can be applied to all solid, non-radioactive elements in the periodic table. By depositing thin films, we achieve growth rates exceeding 1 angstrom/s with output laser powers less than 500 W, using identical beam parameters for many different elements. The source temperature is found to vary linearly with laser power within the examined power range. High growth rates are possible using free-standing sources for most of the elements tested, eliminating the need for crucibles.
△ Less
Submitted 23 March, 2021;
originally announced March 2021.
-
Inelastic Electron Tunneling Spectroscopy at High-Temperatures
Authors:
Prosper Ngabonziza,
Yi Wang,
Peter A. van Aken,
Joachim Maier,
Jochen Mannhart
Abstract:
Ion conducting materials are critical components of batteries, fuel cells, and devices such as memristive switches. Analytical tools are therefore sought that allow the behavior of ions in solids to be monitored and analyzed with high spatial resolution and in real time. In principle, inelastic tunneling spectroscopy offers these capabilities. However, as its spectral resolution is limited by ther…
▽ More
Ion conducting materials are critical components of batteries, fuel cells, and devices such as memristive switches. Analytical tools are therefore sought that allow the behavior of ions in solids to be monitored and analyzed with high spatial resolution and in real time. In principle, inelastic tunneling spectroscopy offers these capabilities. However, as its spectral resolution is limited by thermal softening of the Fermi-Dirac distribution, tunneling spectroscopy is usually constrained to cryogenic temperatures. This constraint would seem to render tunneling spectroscopy useless for studying ions in motion. We report here the first inelastic tunneling spectroscopy studies above room temperature. For these measurements, we have developed high-temperature-stable tunnel junctions that incorporate within the tunnel barrier ultrathin layers for efficient proton conduction. By analyzing the vibrational modes of O-H bonds in BaZrO3-based heterostructures, we demonstrate the detection of protons with a spectral resolution of 20 meV at 400 K (FWHM). Overturning the hitherto existing prediction for the spectral resolution limit of 186 meV (5.4 kBT at 400 K), this resolution enables high-temperature tunneling spectroscopy of ion conductors. With these advances, inelastic tunneling spectroscopy constitutes a novel, valuable analytical tool for solid-state ionics.
△ Less
Submitted 21 December, 2020; v1 submitted 16 December, 2020;
originally announced December 2020.
-
Non-unitary Quantum Electronics: Novel Functions from the Edge of the Quantum World
Authors:
J. Mannhart,
H. Boschker,
P. Bredol
Abstract:
Novel categories of electronic devices and quantum materials are obtained by pipelining the unitary evolution of electron quantum states as described by Schroedinger's equation with non-unitary processes that interrupt the coherent propagation of electrons. These devices and materials reside in the fascinating transition regime between quantum mechanics and classical physics.
The devices are des…
▽ More
Novel categories of electronic devices and quantum materials are obtained by pipelining the unitary evolution of electron quantum states as described by Schroedinger's equation with non-unitary processes that interrupt the coherent propagation of electrons. These devices and materials reside in the fascinating transition regime between quantum mechanics and classical physics.
The devices are designed such that a nonreciprocal unitary state evolution is achieved by means of a broken inversion symmetry, for example as induced at material interfaces. This coherent state evolution is interrupted by individual inelastic scattering events caused by defects coupled to an environment.
Two-terminal non-unitary quantum devices, for example, feature nonreciprocal conductance in linear response. Thus, they are exemptions to Onsager's reciprocal relation, and they challenge the second law of thermodynamics.
Implementing the device function into the unit cells of materials or meta-materials yields novel functionalities in 2D and 3D materials, at interfaces, and in heterostructures.
△ Less
Submitted 13 October, 2020;
originally announced October 2020.
-
Determination of the phase coherence length of PdCoO$_2$ nanostructures
Authors:
T. Harada,
P. Bredol,
H. Inoue,
S. Ito,
J. Mannhart,
A. Tsukazaki
Abstract:
The two-dimensional layered compound PdCoO$_2$ is one of the best oxide conductors, providing an intriguing research arena opened by the long mean free path and the very high mobility of ~51000 cm2/Vs. These properties turn PdCoO$_2$ into a candidate material for nanoscale quantum devices. By exploring universal conductance fluctuations originating at nanoscale PdCoO$_2$ Hall-bar devices, we deter…
▽ More
The two-dimensional layered compound PdCoO$_2$ is one of the best oxide conductors, providing an intriguing research arena opened by the long mean free path and the very high mobility of ~51000 cm2/Vs. These properties turn PdCoO$_2$ into a candidate material for nanoscale quantum devices. By exploring universal conductance fluctuations originating at nanoscale PdCoO$_2$ Hall-bar devices, we determined the phase coherence length of electron transport in c-axis oriented PdCoO$_2$ thin films to equal ~100 nm. The weak temperature dependence of the measured phase coherence length suggests that defect scattering at twin boundaries in the PdCoO$_2$ thin film governs phase breaking. These results suggest that phase coherent devices can be achieved by realizing the devices smaller than the size of twin domains, via refined microfabrication and suppression of twin boundaries.
△ Less
Submitted 17 January, 2021; v1 submitted 6 July, 2020;
originally announced July 2020.
-
Beyond Superconductivity
Authors:
Jochen Mannhart
Abstract:
We present a novel device concept that utilizes the fascinating transition regime between quantum mechanics and classical physics. The devices operate by using a small number of individual quantum mechanical collapse events to interrupt the unitary evolution of quantum states represented by wave packets. Exceeding the constraints of the unitary evolution of quantum mechanics given by the Schroedin…
▽ More
We present a novel device concept that utilizes the fascinating transition regime between quantum mechanics and classical physics. The devices operate by using a small number of individual quantum mechanical collapse events to interrupt the unitary evolution of quantum states represented by wave packets. Exceeding the constraints of the unitary evolution of quantum mechanics given by the Schroedinger equation and of classical Hamiltonian physics, these devices display a surprising behavior.
△ Less
Submitted 31 January, 2020;
originally announced January 2020.
-
Decoherence Effects Break Reciprocity in Matter Transport
Authors:
P. Bredol,
H. Boschker,
D. Braak,
J. Mannhart
Abstract:
The decoherence of quantum states defines the transition between the quantum world and classical physics. Decoherence or, analogously, quantum mechanical collapse events pose fundamental questions regarding the interpretation of quantum mechanics and are technologically relevant because they limit the coherent information processing performed by quantum computers. We have discovered that the trans…
▽ More
The decoherence of quantum states defines the transition between the quantum world and classical physics. Decoherence or, analogously, quantum mechanical collapse events pose fundamental questions regarding the interpretation of quantum mechanics and are technologically relevant because they limit the coherent information processing performed by quantum computers. We have discovered that the transition regime enables a novel type of matter transport. Applying this discovery, we present nanoscale devices in which decoherence, modeled by random quantum jumps, produces fundamentally novel phenomena by interrupting the unitary dynamics of electron wave packets. Noncentrosymmetric conductors with mesoscopic length scales act as two-terminal rectifiers with unique properties. In these devices, the inelastic interaction of itinerant electrons with impurities acting as electron trap** centers leads to a novel steady state characterized by partial charge separation between the two leads, or, in closed circuits to the generation of persistent currents. The interface between the quantum and the classical worlds therefore provides a novel transport regime of value for the realization of a new category of mesoscopic electronic devices.
△ Less
Submitted 23 September, 2021; v1 submitted 26 December, 2019;
originally announced December 2019.
-
Bio-inspired Synthetic Ivory as a Sustainable Material for Piano Keys
Authors:
Dieter Fischer,
Sarah Parks,
Jochen Mannhart
Abstract:
Natural ivory is no longer readily or legally available, as it is obtained primarily from elephant tusks, which now enjoy international protection. Ivory, however, is the best material known for piano keys. We present a hydroxylapatite-gelatin biocomposite that is chemically identical to natural ivory but with functional properties optimized to replace it. As this biocomposite is fabricated from a…
▽ More
Natural ivory is no longer readily or legally available, as it is obtained primarily from elephant tusks, which now enjoy international protection. Ivory, however, is the best material known for piano keys. We present a hydroxylapatite-gelatin biocomposite that is chemically identical to natural ivory but with functional properties optimized to replace it. As this biocomposite is fabricated from abundant materials in an environmentally friendly process and is furthermore biodegradable, it is a sustainable solution for piano keys with the ideal functional properties of natural ivory.
△ Less
Submitted 13 December, 2019;
originally announced December 2019.
-
High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO$_3$/SrZrO$_3$ heterostructures
Authors:
Arnaud P. Nono Tchiomo,
Wolfgang Braun,
Bryan P. Doyle,
Wilfried Sigle,
Peter van Aken,
Jochen Mannhart,
Prosper Ngabonziza
Abstract:
By inserting a SrZrO$_3$ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO$_3$ films. A room temperature mobility of 140 cm$^2$ V$^{-1}\text{s}^{-1}$ is achieved for 25-nm-thick films without any post-growth treatment. The density of threading dislocations…
▽ More
By inserting a SrZrO$_3$ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO$_3$ films. A room temperature mobility of 140 cm$^2$ V$^{-1}\text{s}^{-1}$ is achieved for 25-nm-thick films without any post-growth treatment. The density of threading dislocations is only $4.9\times 10^{9}$ cm$^{-2}$ for buffered films prepared on (110) TbScO$_3$ substrates by pulsed laser deposition.
△ Less
Submitted 29 March, 2019; v1 submitted 27 March, 2019;
originally announced March 2019.
-
Magnetic Properties of Epitaxially-grown $SrRuO_3$ Nanodots
Authors:
Gennadii Laskin,
Hongguang Wang,
Hans Boschker,
Wolfgang Braun,
Vesna Srot,
Peter A. van Aken,
Jochen Mannhart
Abstract:
We present the fabrication and exploration of arrays of nanodots of $SrRuO_3$ with dot sizes between 500 nm and 15 nm. Down to the smallest dot size explored, the samples were found to be magnetic with a maximum of the Curie temperature $T_C$ achieved by dots of 30 nm diameter. This peak in $T_C$ is associated with a dot-size-induced relief of the epitaxial strain, as evidenced by scanning transmi…
▽ More
We present the fabrication and exploration of arrays of nanodots of $SrRuO_3$ with dot sizes between 500 nm and 15 nm. Down to the smallest dot size explored, the samples were found to be magnetic with a maximum of the Curie temperature $T_C$ achieved by dots of 30 nm diameter. This peak in $T_C$ is associated with a dot-size-induced relief of the epitaxial strain, as evidenced by scanning transmission electron microscopy.
△ Less
Submitted 1 February, 2019;
originally announced February 2019.
-
Fermi's golden rule and the second law of thermodynamics
Authors:
Daniel Braak,
Jochen Mannhart
Abstract:
We present a Gedankenexperiment that leads to a violation of detailed balance if quantum mechanical transition probabilities are treated in the usual way by applying Fermi's "golden rule". This Gedankenexperiment introduces a collection of two-level systems that absorb and emit radiation randomly through non-reciprocal coupling to a waveguide, as realized in specific chiral quantum optical systems…
▽ More
We present a Gedankenexperiment that leads to a violation of detailed balance if quantum mechanical transition probabilities are treated in the usual way by applying Fermi's "golden rule". This Gedankenexperiment introduces a collection of two-level systems that absorb and emit radiation randomly through non-reciprocal coupling to a waveguide, as realized in specific chiral quantum optical systems. The non-reciprocal coupling is modeled by a hermitean Hamiltonian and is compatible with the time-reversal invariance of unitary quantum dynamics. Surprisingly, the combination of non-reciprocity with probabilistic radiation processes entails negative entropy production. Although the considered system appears to fulfill all conditions for Markovian stochastic dynamics, such a dynamics violates the Clausius inequality, a formulation of the second law of thermodynamics. Several implications concerning the interpretation of the quantum mechanical formalism are discussed.
△ Less
Submitted 18 September, 2020; v1 submitted 7 November, 2018;
originally announced November 2018.
-
Phase Filters for a Novel Kind of Asymmetric Transport
Authors:
J. Mannhart,
P. Bredol,
D. Braak
Abstract:
We present the concept of nonreciprocal interferometers. These two-way devices let particles pass in both directions, but in one direction break the phase of the particles' wave functions. Such filters can be realized by using, for example, asymmetric quantum rings. Furthermore, we propose arrangements of these interferometers to obtain larger interferometers which are expected to exhibit a puzzli…
▽ More
We present the concept of nonreciprocal interferometers. These two-way devices let particles pass in both directions, but in one direction break the phase of the particles' wave functions. Such filters can be realized by using, for example, asymmetric quantum rings. Furthermore, we propose arrangements of these interferometers to obtain larger interferometers which are expected to exhibit a puzzling behavior that resembles Maxwell demon action. We indicate an opportunity to resolve this puzzle experimentally.
△ Less
Submitted 4 October, 2018;
originally announced October 2018.
-
Coherently strained epitaxial YBa$_2$Cu$_3$O$_{7-δ}$ films grown on NdGaO$_3$ (110)
Authors:
Sogol Khanof,
Jochen Mannhart,
Hans Boschker
Abstract:
YBa$_2$Cu$_3$O$_{7-δ}$ is a good candidate to systematically study high-temperature superconductivity by nanoengineering using advanced epitaxy. An essential prerequisite for these studies are coherently strained YBa$_2$Cu$_3$O$_{7-δ}$ thin films, which we present here using NdGaO$_3$ (110) as a substrate. The films are coherent up to at least 100 nm thickness and have a critical temperature of 89…
▽ More
YBa$_2$Cu$_3$O$_{7-δ}$ is a good candidate to systematically study high-temperature superconductivity by nanoengineering using advanced epitaxy. An essential prerequisite for these studies are coherently strained YBa$_2$Cu$_3$O$_{7-δ}$ thin films, which we present here using NdGaO$_3$ (110) as a substrate. The films are coherent up to at least 100 nm thickness and have a critical temperature of 89$\pm$1 K. The $a$ and $b$ lattice parameters of the YBa$_2$Cu$_3$O$_{7-δ}$ are matched to the in-plane lattice parameters of NdGaO$_3$ (110), resulting in a large reduction of the orthorhombicity of the YBa$_2$Cu$_3$O$_{7-δ}$. These results imply that a large amount of structural disorder in the chain layers of YBa$_2$Cu$_3$O$_{7-δ}$ is not detrimental to superconductivity.
△ Less
Submitted 29 June, 2018;
originally announced June 2018.
-
Modulation of superconducting transition temperature in LaAlO$_{3}$/SrTiO$_{3}$ by SrTiO$_{3}$ structural domains
Authors:
Hilary Noad,
Pascal Wittlich,
Jochen Mannhart,
Kathryn A. Moler
Abstract:
The tetragonal domain structure in SrTiO$_{3}$ (STO) is known to modulate the normal-state carrier density in LaAlO$_{3}$/SrTiO$_{3}$ (LAO/STO) heterostructures, among other electronic properties, but the effect of STO domains on the superconductivity in LAO/STO has not been fully explored. Using a scanning SQUID susceptometer microscope to map the superconducting response as a function of tempera…
▽ More
The tetragonal domain structure in SrTiO$_{3}$ (STO) is known to modulate the normal-state carrier density in LaAlO$_{3}$/SrTiO$_{3}$ (LAO/STO) heterostructures, among other electronic properties, but the effect of STO domains on the superconductivity in LAO/STO has not been fully explored. Using a scanning SQUID susceptometer microscope to map the superconducting response as a function of temperature in LAO/STO, we find that the superconducting transition temperature is spatially inhomogeneous and modulated in a pattern that is characteristic of structural domains in the STO.
△ Less
Submitted 22 May, 2018;
originally announced May 2018.
-
Independence of surface morphology and reconstruction during the thermal preparation of perovskite oxide surfaces
Authors:
Maren Jäger,
Ali Teker,
Jochen Mannhart,
Wolfgang Braun
Abstract:
Using a CO$_2$ laser to directly heat the crystals from the back side, SrTiO$_3$ substrates may be thermally prepared in situ for epitaxy without the need for ex-situ etching and annealing. We find that the formation of large terraces with straight steps at 900-1100 °C is independent from the formation of the ideal surface reconstruction for epitaxy, which requires temperatures in excess of 1200 °…
▽ More
Using a CO$_2$ laser to directly heat the crystals from the back side, SrTiO$_3$ substrates may be thermally prepared in situ for epitaxy without the need for ex-situ etching and annealing. We find that the formation of large terraces with straight steps at 900-1100 °C is independent from the formation of the ideal surface reconstruction for epitaxy, which requires temperatures in excess of 1200 °C to complete. The process may be universal, at least for perovskite oxide surfaces, as it also works, at different temperatures, for LaAlO$_3$ and NdGaO$_3$, two other widely used oxide substrate materials.
△ Less
Submitted 23 February, 2018;
originally announced February 2018.
-
In-gap features in superconducting LaAlO$_3$-SrTiO$_3$ interfaces observed by tunneling spectroscopy
Authors:
Lukas Kuerten,
Christoph Richter,
Narayan Mohanta,
Thilo Kopp,
Arno Kampf,
Jochen Mannhart,
Hans Boschker
Abstract:
We identified quasiparticle states at well-defined energies inside the superconducting gap of the electron system at the LaAlO$_3$-SrTiO$_3$ interface using tunneling spectroscopy. The states are found only in a number of samples and depend upon the thermal-cycling history of the samples. The states consist of a peak at zero energy and other peaks at finite energies, symmetrically placed around ze…
▽ More
We identified quasiparticle states at well-defined energies inside the superconducting gap of the electron system at the LaAlO$_3$-SrTiO$_3$ interface using tunneling spectroscopy. The states are found only in a number of samples and depend upon the thermal-cycling history of the samples. The states consist of a peak at zero energy and other peaks at finite energies, symmetrically placed around zero energy. These peaks disappear, together with the superconducting gap, with increasing temperature and magnetic field. We discuss the likelihood of various physical mechanisms that are known to cause in-gap states in superconductors and conclude that none of these mechanisms can easily explain the results. The conceivable scenarios are the formation of Majorana bound states, Andreev bound states, or the presence of an odd-frequency spin triplet component in the superconducting order parameter.
△ Less
Submitted 7 April, 2017;
originally announced April 2017.
-
Single-gap superconductivity and dome of superfluid density in Nb-doped SrTiO3
Authors:
Markus Thiemann,
Manfred H. Beutel,
Martin Dressel,
Nicholas R. Lee-Hone,
David M. Broun,
Evangelos Fillis-Tsirakis,
Hans Boschker,
Jochen Mannhart,
Marc Scheffler
Abstract:
SrTiO$_3$ exhibits a superconducting dome upon do** with Nb, with a maximum critical temperature \mbox{$T_\mathrm{c} \approx 0.4$~K}. Using microwave stripline resonators at frequencies from 2 to 23~GHz and temperatures down to 0.02~K, we probe the low-energy optical response of superconducting SrTiO$_3$ with charge carrier concentration from 0.3 to $2.2\times 10^{20}$~cm$^{-3}$, covering the ma…
▽ More
SrTiO$_3$ exhibits a superconducting dome upon do** with Nb, with a maximum critical temperature \mbox{$T_\mathrm{c} \approx 0.4$~K}. Using microwave stripline resonators at frequencies from 2 to 23~GHz and temperatures down to 0.02~K, we probe the low-energy optical response of superconducting SrTiO$_3$ with charge carrier concentration from 0.3 to $2.2\times 10^{20}$~cm$^{-3}$, covering the majority of the superconducting dome. We find single-gap electrodynamics even though several electronic bands are superconducting. This is explained by a single energy gap $2Δ$ due to gap homogenization over the Fermi surface consistent with the low level of defect scattering in Nb-doped SrTiO$_3$. Furthermore, we determine $T_\mathrm{c}$, $2Δ$, and the superfluid density as a function of charge carrier concentration, and all three quantities exhibit the characteristic dome shape.
△ Less
Submitted 7 March, 2018; v1 submitted 2 March, 2017;
originally announced March 2017.
-
In-situ Polarized Neutron Reflectometry: Epitaxial Thin Film Growth of Fe on Cu(001) by DC Magnetron Sputtering
Authors:
Wolfgang Kreuzpaintner,
Birgit Wiedemann,
Jochen Stahn,
Jean-Francois Moulin,
Sina Mayr,
Thomas Mairoser,
Andreas Schmehl,
Alexander Herrnberger,
Panagiotis Korelis,
Martin Haese,
**gfan Ye,
Matthias Pomm,
Peter Böni,
Jochen Mannhart
Abstract:
The step-wise growth of epitaxial Fe on Cu(001)/Si(001), investigated by in-situ polarized neutron reflectometry is presented. A sputter deposition system was integrated into the neutron reflectometer AMOR at the Swiss neutron spallation source SINQ, which enables the analysis of the microstructure and magnetic moments during all deposition steps of the Fe layer. We report on the progressive evolu…
▽ More
The step-wise growth of epitaxial Fe on Cu(001)/Si(001), investigated by in-situ polarized neutron reflectometry is presented. A sputter deposition system was integrated into the neutron reflectometer AMOR at the Swiss neutron spallation source SINQ, which enables the analysis of the microstructure and magnetic moments during all deposition steps of the Fe layer. We report on the progressive evolution of the accessible parameters describing the microstructure and the magnetic properties of the Fe film, which reproduce known features and extend our knowledge on the behavior of ultrathin iron films.
△ Less
Submitted 3 March, 2017;
originally announced March 2017.
-
Ferromagnetism and conductivity in atomically thin SrRuO3
Authors:
H. Boschker,
T. Harada,
T. Asaba,
R. Ashoori,
A. V. Boris,
H. Hilgenkamp,
C. R. Hughes,
M. E. Holtz,
L. Li,
D. A. Muller,
H. Nair,
P. Reith,
X. Renshaw Wang,
D. G. Schlom,
A. Soukiassian,
J. Mannhart
Abstract:
Atomically thin ferromagnetic and conducting electron systems are highly desired for spintronics, because they can be controlled with both magnetic and electric fields. We present (SrRuO3)1-(SrTiO3)5 superlattices and single-unit-cell-thick SrRuO3 samples that are capped with SrTiO3. We achieve samples of exceptional quality. In these samples, the electron systems comprise only a single RuO2 plane…
▽ More
Atomically thin ferromagnetic and conducting electron systems are highly desired for spintronics, because they can be controlled with both magnetic and electric fields. We present (SrRuO3)1-(SrTiO3)5 superlattices and single-unit-cell-thick SrRuO3 samples that are capped with SrTiO3. We achieve samples of exceptional quality. In these samples, the electron systems comprise only a single RuO2 plane. We observe conductivity down to 50 mK, a ferromagnetic state with a Curie temperature of 25 K, and signals of magnetism persisting up to approximately 100 K.
△ Less
Submitted 11 February, 2019; v1 submitted 28 September, 2016;
originally announced September 2016.
-
The mechanism of spin-orbit coupling in a 2D oxide interface
Authors:
Patrick Seiler,
Jone Zabaleta,
Robin Wanke,
Jochen Mannhart,
Thilo Kopp,
Daniel Braak
Abstract:
The presence of spin-orbit coupling drives the anomalous magnetotransport at oxide interfaces and forms the basis for numerous intriguing properties of these 2D electron systems, such as topologically protected phases or anti-localization. For many of those systems, the identification of the underlying coupling mechanism is obfuscated by multi-band effects. We therefore analyze the transport of La…
▽ More
The presence of spin-orbit coupling drives the anomalous magnetotransport at oxide interfaces and forms the basis for numerous intriguing properties of these 2D electron systems, such as topologically protected phases or anti-localization. For many of those systems, the identification of the underlying coupling mechanism is obfuscated by multi-band effects. We therefore analyze the transport of LaAlO$_3$/SrTiO$_3$ interfaces under high pressures, a technique to single out the multi-band contributions. We argue that the observed magnetoresistance is due to quantum interference and not related to Coulomb interaction. Therefore, this system is an excellent candidate to generate a metal-insulator transition of the long-sought symplectic 2D universality class. It is shown that the spin-orbit coupling can be linked unambiguously to the band structure with a cubic (Dresselhaus-like) rather than a linear (Rashba-like) spin-orbit band splitting.
△ Less
Submitted 23 September, 2016;
originally announced September 2016.
-
Quantum-Matter Heterostructures
Authors:
Hans Boschker,
Jochen Mannhart
Abstract:
Combining the power and possibilities of heterostructure engineering with the collective and emergent properties of quantum materials, quantum-matter heterostructures open a new arena of solid-state physics. Here we provide a review of interfaces and heterostructures made of quantum matter. Unique electronic states can be engineered in these structures, giving rise to unforeseeable opportunities f…
▽ More
Combining the power and possibilities of heterostructure engineering with the collective and emergent properties of quantum materials, quantum-matter heterostructures open a new arena of solid-state physics. Here we provide a review of interfaces and heterostructures made of quantum matter. Unique electronic states can be engineered in these structures, giving rise to unforeseeable opportunities for scientific discovery and potential applications. We discuss the present status of this nascent field of quantum-matter heterostructures, its limitations, perspectives, and challenges.
△ Less
Submitted 25 July, 2016;
originally announced July 2016.
-
Artificial Atoms Based on Correlated Materials
Authors:
Jochen Mannhart,
Hans Boschker,
Thilo Kopp,
Roser Valentí
Abstract:
Low-dimensional electron systems fabricated from quantum matter have in recent years become available and are being explored with great intensity. This article gives an overview of the fundamental properties of such systems and summarizes the state of the field. We furthermore present and consider the concept of artificial atoms fabricated from quantum materials, anticipating remarkable scientific…
▽ More
Low-dimensional electron systems fabricated from quantum matter have in recent years become available and are being explored with great intensity. This article gives an overview of the fundamental properties of such systems and summarizes the state of the field. We furthermore present and consider the concept of artificial atoms fabricated from quantum materials, anticipating remarkable scientific advances and possibly important applications of this new field of research. The surprising properties of these artificial atoms and of molecules or even of solids assembled from them are presented and discussed.
△ Less
Submitted 14 June, 2016;
originally announced June 2016.
-
Hydrostatic pressure response of an oxide two-dimensional electron system
Authors:
J. Zabaleta,
V. S. Borisov,
R. Wanke,
H. O. Jeschke,
S. C. Parks,
B. Baum,
A. Teker,
T. Harada,
K. Syassen,
T. Kopp,
N. Pavlenko,
R. Valentí,
J. Mannhart
Abstract:
Two-dimensional electron systems with fascinating properties exist in multilayers of standard semiconductors, on helium surfaces, and in oxides. Compared to the two-dimensional (2D) electron gases of semiconductors, the 2D electron systems in oxides are typically more strongly correlated and more sensitive to the microscopic structure of the hosting lattice. This sensitivity suggests that the oxid…
▽ More
Two-dimensional electron systems with fascinating properties exist in multilayers of standard semiconductors, on helium surfaces, and in oxides. Compared to the two-dimensional (2D) electron gases of semiconductors, the 2D electron systems in oxides are typically more strongly correlated and more sensitive to the microscopic structure of the hosting lattice. This sensitivity suggests that the oxide 2D systems are highly tunable by hydrostatic pressure. Here we explore the effects of hydrostatic pressure on the well-characterized 2D electron system formed at LaAlO$_{3}$ -SrTiO$_{3}$ interfaces[1] and measure a pronounced, unexpected response. Pressure of $\sim$2 GPa reversibly doubles the 2D carrier density $n_{s}$ at 4 K. Along with the increase of $n_{s}$, the conductivity and mobility are reduced under pressure. First-principles pressure simulations reveal the same behavior of the carrier density and suggest a possible mechanism of the mobility reduction, based on the dielectric properties of both materials and their variation under external pressure.
△ Less
Submitted 27 May, 2016;
originally announced May 2016.
-
Evidence for Superconducting Phase Coherence in the Metallic/Insulating Regime of the LaAlO3-SrTiO3 Interface Electron System
Authors:
E. Fillis-Tsirakis,
C. Richter,
J. Mannhart,
H. Boschker
Abstract:
A superconducting phase with an extremely low carrier density of the order of 10^13 cm^-2 is present at LaAlO3-SrTiO3 interfaces. If depleted from charge carriers by means of a gate field, this superconducting phase undergoes a transition into a metallic/insulating state that is still characterized by a gap in the spectral density of states. Measuring and analyzing the critical field of this gap,…
▽ More
A superconducting phase with an extremely low carrier density of the order of 10^13 cm^-2 is present at LaAlO3-SrTiO3 interfaces. If depleted from charge carriers by means of a gate field, this superconducting phase undergoes a transition into a metallic/insulating state that is still characterized by a gap in the spectral density of states. Measuring and analyzing the critical field of this gap, we provide evidence that macroscopically phase-coherent Cooper pairs are present in the metallic/insulating state. This is characterized by fluctuating vortex-antivortex pairs, and not by individual, immobile Cooper pairs. The measurements furthermore yield the carrier-density dependence of the superconducting coherence length of the two-dimensional system.
△ Less
Submitted 18 December, 2015;
originally announced December 2015.
-
Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO$_3$-SrTiO$_3$-Based Heterostructures
Authors:
C. Woltmann,
T. Harada,
H. Boschker,
V. Srot,
P. A. van Aken,
H. Klauk,
J. Mannhart
Abstract:
The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO$_3$-SrTiO$_3$ heterostructures. The studies reveal the existence of channel-length modulation and drain-induced barrier lowering for gate lengths below 1 μm, with a characteristic behavior comparable to semiconductin…
▽ More
The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO$_3$-SrTiO$_3$ heterostructures. The studies reveal the existence of channel-length modulation and drain-induced barrier lowering for gate lengths below 1 μm, with a characteristic behavior comparable to semiconducting devices. With the fabrication of field-effect transistors with gate lengths as small as 60 nm the results demonstrate the possibility to fabricate by electron-beam lithography functional devices based on complex oxides with characteristic lengths of several ten nanometers.
△ Less
Submitted 24 November, 2015;
originally announced November 2015.
-
Electron-phonon Coupling and the Superconducting Phase Diagram of the LaAlO3-SrTiO3 Interface
Authors:
Hans Boschker,
Christoph Richter,
Evangelos Fillis-Tsirakis,
Christof W. Schneider,
Jochen Mannhart
Abstract:
The superconductor at the LaAlO3-SrTiO3 interface provides a model system for the study of two-dimensional superconductivity in the dilute carrier density limit. Here we experimentally address the pairing mechanism in this superconductor. We extract the electron-phonon spectral function from tunneling spectra and conclude, without ruling out contributions of further pairing channels, that electron…
▽ More
The superconductor at the LaAlO3-SrTiO3 interface provides a model system for the study of two-dimensional superconductivity in the dilute carrier density limit. Here we experimentally address the pairing mechanism in this superconductor. We extract the electron-phonon spectral function from tunneling spectra and conclude, without ruling out contributions of further pairing channels, that electron-phonon mediated pairing is strong enough to account for the superconducting critical temperatures. Furthermore, we discuss the electron-phonon coupling in relation to the superconducting phase diagram. The electron-phonon spectral function is independent of the carrier density, except for a small part of the phase diagram in the underdoped region. The tunneling measurements reveal that the increase of the chemical potential with increasing carrier density levels off and is zero in the overdoped region of the phase diagram. This indicates that the additionally induced carriers do not populate the band that hosts the superconducting state and that the superconducting order parameter therefore is weakened by the presence of charge carriers in another band.
△ Less
Submitted 3 May, 2015; v1 submitted 16 April, 2015;
originally announced April 2015.
-
Locally enhanced conductivity due to the tetragonal domain structure in LaAlO$_{3}$/SrTiO$_{3}$ heterointerfaces
Authors:
Beena Kalisky,
Eric M. Spanton,
Hilary Noad,
John R. Kirtley,
Katja C. Nowack,
Christopher Bell,
Hiroki K. Sato,
Masayuki Hosoda,
Yanwu Xie,
Yasuyuki Hikita,
Carsten Woltmann,
Georg Pfanzelt,
Rainer Jany,
Christoph Richter,
Harold Y. Hwang,
Jochen Mannhart,
Kathryn A. Moler
Abstract:
The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and TiO$_{2}$-terminated SrTiO$_{3}$ (STO). Transport and other measurements in this system show a plethora of diverse physical phenomena. To better understand the int…
▽ More
The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and TiO$_{2}$-terminated SrTiO$_{3}$ (STO). Transport and other measurements in this system show a plethora of diverse physical phenomena. To better understand the interface conductivity, we used scanning superconducting quantum interference device microscopy to image the magnetic field locally generated by current in an interface. At low temperature, we found that the current flowed in conductive narrow paths oriented along the crystallographic axes, embedded in a less conductive background. The configuration of these paths changed on thermal cycling above the STO cubic-to-tetragonal structural transition temperature, implying that the local conductivity is strongly modified by the STO tetragonal domain structure. The interplay between substrate domains and the interface provides an additional mechanism for understanding and controlling the behaviour of heterostructures.
△ Less
Submitted 11 December, 2013;
originally announced December 2013.
-
Emerging magnetism and electronic phase separation at titanate interfaces
Authors:
N. Pavlenko,
T. Kopp,
J. Mannhart
Abstract:
The emergence of magnetism in otherwise nonmagnetic compounds and its underlying mechanisms have become the subject of intense research. Here we demonstrate that the nonmagnetic oxygen vacancies are responsible for an unconventional magnetic state common for titanate interfaces and surfaces. Using an effective multiorbital modelling, we find that the presence of localized vacancies leads to an int…
▽ More
The emergence of magnetism in otherwise nonmagnetic compounds and its underlying mechanisms have become the subject of intense research. Here we demonstrate that the nonmagnetic oxygen vacancies are responsible for an unconventional magnetic state common for titanate interfaces and surfaces. Using an effective multiorbital modelling, we find that the presence of localized vacancies leads to an interplay of ferromagnetic order in the itinerant t2g band and complex magnetic oscillations in the orbitally-reconstructed eg-band, which can be tuned by gate fields at oxide interfaces. The magnetic phase diagram includes highly fragmented regions of stable and phase-separated magnetic states forming beyond nonzero critical defect concentrations.
△ Less
Submitted 24 August, 2013;
originally announced August 2013.
-
Tuning the Ultrafast Spin Dynamics in Carrier-Density-Controlled Ferromagnets
Authors:
Masakazu Matsubara,
Alexander Schroer,
Andreas Schmehl,
Alexander Melville,
Carsten Becher,
Mauricio Trujillo Martinez,
Darrell G. Schlom,
Jochen Mannhart,
Johann Kroha,
Manfred Fiebig
Abstract:
Ultrafast strengthening or quenching of the ferromagnetic order of semiconducting Eu1-xGdxO was achieved by resonant photoexcitation. The modification of the magnetic order is established within 3 ps as revealed by optical second harmonic generation. A theoretical analysis shows that the response is determined by the interplay of chemically and optically generated carriers in a nonequilibrium scen…
▽ More
Ultrafast strengthening or quenching of the ferromagnetic order of semiconducting Eu1-xGdxO was achieved by resonant photoexcitation. The modification of the magnetic order is established within 3 ps as revealed by optical second harmonic generation. A theoretical analysis shows that the response is determined by the interplay of chemically and optically generated carriers in a nonequilibrium scenario beyond the three-temperature model. General criteria for the design of spintronics materials with tunable ultrafast spin dynamics are given.
△ Less
Submitted 5 November, 2013; v1 submitted 9 April, 2013;
originally announced April 2013.
-
LaAlO3 stoichiometry found key to electron liquid formation at LaAlO3/SrTiO3 interfaces
Authors:
M. P. Warusawithana,
C. Richter,
J. A. Mundy,
P. Roy,
J. Ludwig,
S. Paetel,
T. Heeg,
A. A. Pawlicki,
L. F. Kourkoutis,
M. Zheng,
M. Lee,
B. Mulcahy,
W. Zander,
Y. Zhu,
J. Schubert,
J. N. Eckstein,
D. A. Muller,
C. Stephen Hellberg,
J. Mannhart,
D. G. Schlom
Abstract:
Emergent phenomena, including superconductivity and magnetism, found in the two-dimensional electron liquid (2-DEL) at the interface between the insulators LaAlO3 and SrTiO3 distinguish this rich system from conventional two-dimensional electron gases at compound semiconductor interfaces. The origin of this 2-DEL, however, is highly debated with focus on the role of defects in the SrTiO3 while the…
▽ More
Emergent phenomena, including superconductivity and magnetism, found in the two-dimensional electron liquid (2-DEL) at the interface between the insulators LaAlO3 and SrTiO3 distinguish this rich system from conventional two-dimensional electron gases at compound semiconductor interfaces. The origin of this 2-DEL, however, is highly debated with focus on the role of defects in the SrTiO3 while the LaAlO3 has been assumed perfect. Our experiments and first principles calculations show that the cation stoichiometry of the nominal LaAlO3 layer is key to 2-DEL formation: only Al-rich LaAlO3 results in a 2-DEL. While extrinsic defects including oxygen deficiency are known to render LaAlO3/SrTiO3 samples conducting, our results show that in the absence of such extrinsic defects, an interface 2-DEL can form. Its origin is consistent with an intrinsic electronic reconstruction occurring to counteract a polarization catastrophe. This work provides a roadmap for identifying other interfaces where emergent behaviors await discovery.
△ Less
Submitted 20 March, 2013;
originally announced March 2013.
-
Highly-Efficient Thermoelectronic Conversion of Solar Energy and Heat into Electric Power
Authors:
S. Meir,
C. Stephanos,
T. H. Geballe,
J. Mannhart
Abstract:
Electric power may, in principle, be generated in a highly efficient manner from heat created by focused solar irradiation, chemical combustion, or nuclear decay by means of thermionic energy conversion. As the conversion efficiency of the thermionic process tends to be degraded by electron space charges, the efficiencies of thermionic generators have amounted to only a fraction of those fundament…
▽ More
Electric power may, in principle, be generated in a highly efficient manner from heat created by focused solar irradiation, chemical combustion, or nuclear decay by means of thermionic energy conversion. As the conversion efficiency of the thermionic process tends to be degraded by electron space charges, the efficiencies of thermionic generators have amounted to only a fraction of those fundamentally possible. We show that this space-charge problem can be resolved by sha** the electric potential distribution of the converter such that the static electron space-charge clouds are transformed into an output current. Although the technical development of practical generators will require further substantial efforts, we conclude that a highly efficient transformation of heat to electric power may well be achieved.
△ Less
Submitted 15 January, 2013;
originally announced January 2013.
-
Direct k-space map** of the electronic structure in an oxide-oxide interface
Authors:
G. Berner,
M. Sing,
H. Fujiwara,
A. Yasui,
Y. Saitoh,
A. Yamasaki,
Y. Nishitani,
A. Sekiyama,
N. Pavlenko,
T. Kopp,
C. Richter,
J. Mannhart,
S. Suga,
R. Claessen
Abstract:
The interface between LaAlO3 and SrTiO3 hosts a two-dimensional electron system of itinerant carriers, although both oxides are band insulators. Interface ferromagnetism coexisting with superconductivity has been found and attributed to local moments. Experimentally, it has been established that Ti 3d electrons are confined to the interface. Using soft x-ray angle-resolved resonant photoelectron s…
▽ More
The interface between LaAlO3 and SrTiO3 hosts a two-dimensional electron system of itinerant carriers, although both oxides are band insulators. Interface ferromagnetism coexisting with superconductivity has been found and attributed to local moments. Experimentally, it has been established that Ti 3d electrons are confined to the interface. Using soft x-ray angle-resolved resonant photoelectron spectroscopy we have directly mapped the interface states in k-space. Our data demonstrate a charge dichotomy. A mobile fraction contributes to Fermi surface sheets, whereas a localized portion at higher binding energies is tentatively attributed to electrons trapped by O-vacancies in the SrTiO3. While photovoltage effects in the polar LaAlO3 layers cannot be excluded, the apparent absence of surface-related Fermi surface sheets could also be fully reconciled in a recently proposed electronic reconstruction picture where the built-in potential in the LaAlO3 is compensated by surface O-vacancies serving also as charge reservoir.
△ Less
Submitted 18 June, 2013; v1 submitted 13 January, 2013;
originally announced January 2013.
-
Giant third-order magneto-optical rotation in ferromagnetic EuO
Authors:
Masakazu Matsubara,
Andreas Schmehl,
Jochen Mannhart,
Darrell G. Schlom,
Manfred Fiebig
Abstract:
A magnetization-induced rotation in the third-order nonlinear optical response is observed in out-of-plane-magnetized epitaxial EuO films. We discuss the relation of this nonlinear magneto-optical rotation to the linear Faraday rotation. It is allowed in all materials but, in contrast to the linear Faraday rotation, not affected by the reduction of the thickness of the material. Thus, the third-or…
▽ More
A magnetization-induced rotation in the third-order nonlinear optical response is observed in out-of-plane-magnetized epitaxial EuO films. We discuss the relation of this nonlinear magneto-optical rotation to the linear Faraday rotation. It is allowed in all materials but, in contrast to the linear Faraday rotation, not affected by the reduction of the thickness of the material. Thus, the third-order magneto-optical rotation is particularly suitable for probing the magnetization of functional magnetic materials such as ultra-thin films and multilayers.
△ Less
Submitted 14 November, 2012;
originally announced November 2012.
-
Electric-field-induced pyroelectric order and localization of the confined electrons in LaAlO3/SrTiO3 heterostructures
Authors:
M. Rössle,
K. W. Kim,
A. Dubroka,
P. Marsik,
C. N. Wang,
R. Jany,
C. Richter,
J. Mannhart,
C. W. Schneider,
A. Frano,
P. Wochner,
Y. Lu,
B. Keimer,
D. K. Shukla,
J. Strempfer,
C. Bernhard
Abstract:
With infrared ellipsometry, x-ray diffraction, and electric transport measurements we investigated the electric-field-effect on the confined electrons at the LaAlO3/SrTiO3 interface. We obtained evidence that the localization of the electrons at low temperature and negative gate voltage is induced, or at least strongly enhanced, by a pyroelectric phase transition in SrTiO3 which strongly reduces t…
▽ More
With infrared ellipsometry, x-ray diffraction, and electric transport measurements we investigated the electric-field-effect on the confined electrons at the LaAlO3/SrTiO3 interface. We obtained evidence that the localization of the electrons at low temperature and negative gate voltage is induced, or at least strongly enhanced, by a pyroelectric phase transition in SrTiO3 which strongly reduces the lattice polarizability and the subsequent Coulomb screening. In particular, we show that the charge localisation and the polar order of SrTiO3 both develop below about 50 K and exhibit similar, unipolar hysteresis loops as a function of the gate voltage. Our findings suggest that the pyroelectric order also plays an important role in the quantum phase transition at very low temperatures where superconductivity is suppressed by an electric field.
△ Less
Submitted 21 September, 2012;
originally announced September 2012.
-
Large Negative Electronic Compressibility of LaAlO3-SrTiO3 Interfaces with Ultrathin LaAlO3 Layers
Authors:
V. Tinkl,
M. Breitschaft,
C. Richter,
J. Mannhart
Abstract:
A two-dimensional electron liquid is formed at the n-type interface between SrTiO3 and LaAlO3. Here we report on Kelvin probe microscopy measurements of the electronic compressibility of this electron system. The electronic compressibility is found to be negative for carrier densities of \approx10^13/cm^2. At even smaller densities, a metal-to-insulator transition occurs. These local measurements…
▽ More
A two-dimensional electron liquid is formed at the n-type interface between SrTiO3 and LaAlO3. Here we report on Kelvin probe microscopy measurements of the electronic compressibility of this electron system. The electronic compressibility is found to be negative for carrier densities of \approx10^13/cm^2. At even smaller densities, a metal-to-insulator transition occurs. These local measurements corroborate earlier measurements of the electronic compressibility of LaAlO3-SrTiO3 interfaces obtained by measuring the capacitance of macroscopic metal-LaAlO3-SrTiO3 capacitors.
△ Less
Submitted 27 July, 2012;
originally announced July 2012.
-
Oxygen vacancies at titanate interfaces: two-dimensional magnetism and orbital reconstruction
Authors:
N. Pavlenko,
T. Kopp,
E. Y. Tsymbal,
J. Mannhart,
G. A. Sawatzky
Abstract:
We show that oxygen vacancies at titanate interfaces induce a complex multiorbital reconstruction which involves a lowering of the local symmetry and an inversion of t2g and eg orbitals resulting in the occupation of the eg orbitals of Ti atoms neighboring the O vacancy. The orbital reconstruction depends strongly on the clustering of O vacancies and can be accompanied by a magnetic splitting betw…
▽ More
We show that oxygen vacancies at titanate interfaces induce a complex multiorbital reconstruction which involves a lowering of the local symmetry and an inversion of t2g and eg orbitals resulting in the occupation of the eg orbitals of Ti atoms neighboring the O vacancy. The orbital reconstruction depends strongly on the clustering of O vacancies and can be accompanied by a magnetic splitting between the local eg orbitals with lobes directed towards the vacancy and interface dxy orbitals. The reconstruction generates a two-dimensional interface magnetic state not observed in bulk SrTiO3. Using generalized gradient approximation (LSDA) with intra-atomic Coulomb repulsion (GGA+U), we find that this magnetic state is common for titanate surfaces and interfaces.
△ Less
Submitted 11 August, 2012; v1 submitted 20 April, 2012;
originally announced April 2012.
-
Field-Effect Devices Utilizing LaAlO$_3$-SrTiO$_3$ Interfaces
Authors:
B. Förg,
C. Richter,
J. Mannhart
Abstract:
Using LaAlO$_3$-SrTiO$_3$ bilayers, we have fabricated field-effect devices that utilize the two-dimensional electron liquid generated at the bilayers' {\textit n}-type interfaces as drain-source channels and the LaAlO$_3$ layers as gate dielectrics. With gate voltages well below 1\,V, the devices are characterized by voltage gain and current gain. The devices were operated at temperatures up to 1…
▽ More
Using LaAlO$_3$-SrTiO$_3$ bilayers, we have fabricated field-effect devices that utilize the two-dimensional electron liquid generated at the bilayers' {\textit n}-type interfaces as drain-source channels and the LaAlO$_3$ layers as gate dielectrics. With gate voltages well below 1\,V, the devices are characterized by voltage gain and current gain. The devices were operated at temperatures up to 100\,°C.
△ Less
Submitted 28 January, 2012;
originally announced January 2012.
-
Interface-induced d-wave pairing
Authors:
C. Stephanos,
T. Kopp,
J. Mannhart,
P. J. Hirschfeld
Abstract:
We discuss a scenario for interface-induced superconductivity involving pairing by dipolar excitations proximate to a two-dimensional electron system controlled by a transverse electric field. If the interface consists of transition metal oxide materials, the repulsive on-site Coulomb interaction is typically strong and a superconducting state is formed via exchange of non-local dipolar excitation…
▽ More
We discuss a scenario for interface-induced superconductivity involving pairing by dipolar excitations proximate to a two-dimensional electron system controlled by a transverse electric field. If the interface consists of transition metal oxide materials, the repulsive on-site Coulomb interaction is typically strong and a superconducting state is formed via exchange of non-local dipolar excitations in the d-wave channel. Perspectives to enhance the superconducting transition temperature are discussed.
△ Less
Submitted 9 August, 2011;
originally announced August 2011.
-
Magnetism and superconductivity at LAO/STO-interfaces: the role of Ti 3d interface electrons
Authors:
N. Pavlenko,
T. Kopp,
E. Y. Tsymbal,
G. A. Sawatzky,
J. Mannhart
Abstract:
Ferromagnetism and superconductivity are in most cases adverse. However, recent experiments reveal that they coexist at interfaces of LaAlO3 and SrTiO3. We analyze the magnetic state within density functional theory and provide evidence that magnetism is not an intrinsic property of the two-dimensional electron liquid at the interface. We demonstrate that the robust ferromagnetic state is induced…
▽ More
Ferromagnetism and superconductivity are in most cases adverse. However, recent experiments reveal that they coexist at interfaces of LaAlO3 and SrTiO3. We analyze the magnetic state within density functional theory and provide evidence that magnetism is not an intrinsic property of the two-dimensional electron liquid at the interface. We demonstrate that the robust ferromagnetic state is induced by the oxygen vacancies in SrTiO3- or in the LaAlO3-layer. This allows for the notion that areas with increased density of oxygen vacancies produce ferromagnetic puddles and account for the previous observation of a superparamagnetic behavior in the superconducting state.
△ Less
Submitted 11 January, 2012; v1 submitted 5 May, 2011;
originally announced May 2011.
-
Coexistence of Magnetic Order and Two-dimensional Superconductivity at LaAlO$_3$/SrTiO$_3$ Interfaces
Authors:
Lu Li,
C. Richter,
J. Mannhart,
R. C. Ashoori
Abstract:
A two dimensional electronic system with novel electronic properties forms at the interface between the insulators LaAlO$_3$ and SrTiO$_3$. Samples fabricated until now have been found to be either magnetic or superconducting, depending on growth conditions. We combine transport measurements with high-resolution magnetic torque magnetometry and report here evidence of magnetic ordering of the two-…
▽ More
A two dimensional electronic system with novel electronic properties forms at the interface between the insulators LaAlO$_3$ and SrTiO$_3$. Samples fabricated until now have been found to be either magnetic or superconducting, depending on growth conditions. We combine transport measurements with high-resolution magnetic torque magnetometry and report here evidence of magnetic ordering of the two-dimensional electron liquid at the interface. The magnetic ordering exists from well below the superconducting transition to up to 200 K, and is characterized by an in-plane magnetic moment. Our results suggest that there is either phase separation or coexistence between magnetic and superconducting states. The coexistence scenario would point to an unconventional superconducting phase in the ground state.
△ Less
Submitted 1 May, 2011;
originally announced May 2011.
-
Evolution of the interfacial structure of LaAlO3 on SrTiO3
Authors:
S. A. Pauli,
S. J. Leake,
B. Delley,
M. Björck,
C. W. Schneider,
C. M. Schlepütz,
D. Martoccia,
S. Paetel,
J. Mannhart,
P. R. Willmott
Abstract:
The evolution of the atomic structure of LaAlO3 grown on SrTiO3 was investigated using surface x-ray diffraction in conjunction with model-independent, phase-retrieval algorithms between two and five monolayers film thickness. A depolarizing buckling is observed between cation and oxygen positions in response to the electric field of polar LaAlO3, which decreases with increasing film thickness. We…
▽ More
The evolution of the atomic structure of LaAlO3 grown on SrTiO3 was investigated using surface x-ray diffraction in conjunction with model-independent, phase-retrieval algorithms between two and five monolayers film thickness. A depolarizing buckling is observed between cation and oxygen positions in response to the electric field of polar LaAlO3, which decreases with increasing film thickness. We explain this in terms of competition between elastic strain energy, electrostatic energy, and electronic reconstructions. The findings are qualitatively reproduced by density-functional theory calculations. Significant cationic intermixing across the interface extends approximately three monolayers for all film thicknesses. The interfaces of films thinner than four monolayers therefore extend to the surface, which might affect conductivity.
△ Less
Submitted 10 September, 2010;
originally announced September 2010.
-
Metal-Insulator Transition of the LaAlO3-SrTiO3 Interface Electron System
Authors:
Y. C. Liao,
T. Kopp,
C. Richter,
A. Rosch,
J. Mannhart
Abstract:
We report on a metal-insulator transition in the LaAlO3-SrTiO3 interface electron system, of which the carrier density is tuned by an electric gate field. Below a critical carrier density n_c ranging from 0.5-1.5 * 10^13/cm^2, LaAlO3-SrTiO3 interfaces, forming drain-source channels in field-effect devices are non-ohmic. The differential resistance at zero channel bias diverges within a 2% variatio…
▽ More
We report on a metal-insulator transition in the LaAlO3-SrTiO3 interface electron system, of which the carrier density is tuned by an electric gate field. Below a critical carrier density n_c ranging from 0.5-1.5 * 10^13/cm^2, LaAlO3-SrTiO3 interfaces, forming drain-source channels in field-effect devices are non-ohmic. The differential resistance at zero channel bias diverges within a 2% variation of the carrier density. Above n_c, the conductivity of the ohmic channels has a metal-like temperature dependence, while below n_c conductivity sets in only above a threshold electric field. For a given thickness of the LaAlO3 layer, the conductivity follows a sigma_0 ~(n - n_c)/n_c characteristic. The metal-insulator transition is found to be distinct from that of the semiconductor 2D systems.
△ Less
Submitted 3 September, 2010;
originally announced September 2010.
