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Continuously tunable uniaxial strain control of van der Waals heterostructure devices
Authors:
Zhaoyu Liu,
Xuetao Ma,
John Cenker,
Jiaqi Cai,
Zaiyao Fei,
Paul Malinowski,
Joshua Mutch,
Yuzhou Zhao,
Kyle Hwangbo,
Zhong Lin,
Arnab Manna,
Jihui Yang,
David Cobden,
Xiaodong Xu,
Matthew Yankowitz,
Jiun-Haw Chu
Abstract:
Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optic…
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Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based \textit{in situ} uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to $-0.15\%$ at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures, and can be easily extended to include additional characterization techniques.
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Submitted 23 May, 2024; v1 submitted 1 April, 2024;
originally announced April 2024.
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Effect of Topological Non-hexagonal Rings and Stone Wale Defects on the Vibrational Response of Single and Multi-Layer Ion Irradiated Graphene
Authors:
Ashis K. Manna,
Simeon J. Gilbert,
Shalik R. Joshi,
Takashi Komesu,
Shikha Varma
Abstract:
Present study explores the observation of topological non-hexagonal rings (NHR) and Stone Wale (SW) defects by Raman experiments in both single (SLG) and multi-layer graphene (MLG) after they are irradiated with 100- 300 eV Ar ions. Although predicted by theoretical studies, here it is experimentally shown for the first time that graphene SW/NHR defects have a signature in Raman. Broad bandwidth o…
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Present study explores the observation of topological non-hexagonal rings (NHR) and Stone Wale (SW) defects by Raman experiments in both single (SLG) and multi-layer graphene (MLG) after they are irradiated with 100- 300 eV Ar ions. Although predicted by theoretical studies, here it is experimentally shown for the first time that graphene SW/NHR defects have a signature in Raman. Broad bandwidth of the pertinent Raman features suggests the presence of more than one SW/NHR defect mode, in agreement with the DFT studies. Variations in the SW/NHR related Raman mode intensities demonstrate the annihilation of these topological defects at higher energies. Behavior of Raman allowed G and 2D excitations, as well as the disorder-activated D, D' and G* lines, has also been investigated in SLG and MLG. These indicate an evolution of defects in graphene with ion irradiation, as well as presence of a transition state beyond which the Raman modes are dominated by a rise in sp3 content. Correlation of these aspects with the SW/NHR Raman provide significant insight into ion induced evolution of graphene. The direct observation of SW/NHR defects by Raman spectroscopy could be important in promoting exploration of rich topological aspects of Graphene in various fields.
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Submitted 12 December, 2021;
originally announced December 2021.
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Magnetic properties of S = 5/2 anisotropic triangular chain Bi3FeMo2O12
Authors:
K. Boya,
K. Nam,
A. K. Manna,
J. Kang,
C. Lyi,
A. Jain,
S. M. Yusuf,
P. Khuntia,
B. Sana,
V. Kumar,
A. V. Mahajan,
Deepak. R. Patil,
Kee Hoon Kim,
S. K. Panda,
B. Koteswararao
Abstract:
Competing magnetic interactions in low-dimensional quantum magnets can lead to the exotic ground state with fractionalized excitations. Herein, we present our results on an S = 5/2 quasi-one-dimensional spin system Bi3FeMo2O12. The structure of Bi3FeMo2O12 consists of very well separated, infinite zig-zag S = 5/2 spin chains. The observation of a broad maximum around 10 K in the magnetic susceptib…
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Competing magnetic interactions in low-dimensional quantum magnets can lead to the exotic ground state with fractionalized excitations. Herein, we present our results on an S = 5/2 quasi-one-dimensional spin system Bi3FeMo2O12. The structure of Bi3FeMo2O12 consists of very well separated, infinite zig-zag S = 5/2 spin chains. The observation of a broad maximum around 10 K in the magnetic susceptibility suggests the presence of short-range spin correlations. Magnetic susceptibility data do not fit to S=5/2 uniform spin chain model due to the presence of 2nd nearest-neighbor coupling (J2) along with the 1st nearest-neighbor coupling J1 of the zig-zag chain. The electronic structure calculations infer that the value of J1 is comparable with J2 (J2/J1~1.1) with a negligible inter-chain interaction (J'/J ~ 0.01), implying that Bi3FeMo2O12 is a highly frustrated triangular chain system. The absence of magnetic long-range ordering down to 0.2 K is seen in the heat capacity data, despite a relatively large antiferromagnetic Curie-Weiss temperature of -40 K. The magnetic heat capacity follows nearly a linear behavior at low temperatures indicating that the S = 5/2 anisotropic triangular chain exhibits the gapless excitations.
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Submitted 23 October, 2021;
originally announced October 2021.
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Eliminating reservoir density-of-states fingerprints in Coulomb blockade spectroscopy
Authors:
Arnab Manna,
Bhaskaran Muralidharan,
Suddhasatta Mahapatra
Abstract:
The differential conductance map of a single electron transistor (SET) provides information about a variety of parameters related to (quantum) dots, relevant for semiconductor-based quantum computing schemes. However, in ultra-scaled device architectures, identification of excited-state resonances of the quantum dot in the conductance map is often complicated by the appearance of features due to n…
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The differential conductance map of a single electron transistor (SET) provides information about a variety of parameters related to (quantum) dots, relevant for semiconductor-based quantum computing schemes. However, in ultra-scaled device architectures, identification of excited-state resonances of the quantum dot in the conductance map is often complicated by the appearance of features due to non-uniform density-of-states (DOS) of the source and drain reservoirs of the SET. Here, we demonstrate theoretically that the pump-probe spectroscopic technique, originally introduced by Fujisawa et al., allows the fingerprint of the reservoir-DOS to be completely suppressed while preserving the visibility of the excited state resonances. We also propose a specific approach for performing DC Coulomb blockade spectroscopy, which can effectively eliminate the DOS-related features. The advantages and limitations of the two approaches are investigated in detail. The results demonstrated here may provide an important optimization capability for emerging proposals of computer-automated control of large arrays of coupled but independently controlled charge and spin qubits.
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Submitted 12 December, 2017;
originally announced December 2017.
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Intrinsic Half-Metallicity in Modified Graphene Nanoribbons
Authors:
Sudipta Dutta,
Arun K. Manna,
Swapan K. Pati
Abstract:
We perform first-principles calculations based on density functional theory to study quasi one-dimensional edge-passivated (with hydrogen) zigzag graphene nanoribbons (ZGNRs) of various widths with chemical dopants, boron and nitrogen, kee** the whole system isoelectronic. Gradual increase in do** concentration takes the system finally to zigzag boron nitride nanoribbons (ZBNNRs). Our study…
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We perform first-principles calculations based on density functional theory to study quasi one-dimensional edge-passivated (with hydrogen) zigzag graphene nanoribbons (ZGNRs) of various widths with chemical dopants, boron and nitrogen, kee** the whole system isoelectronic. Gradual increase in do** concentration takes the system finally to zigzag boron nitride nanoribbons (ZBNNRs). Our study reveals that, for all do** concentrations the systems stabilize in anti-ferromagnetic ground states. Do** concentrations and dopant positions regulate the electronic structure of the nanoribbons, exhibiting both semiconducting and half-metallic behaviors as a response to the external electric field. Interestingly, our results show that ZBNNRs with terminating polyacene unit exhibit half-metallicity irrespective of the ribbon width as well as applied electric field, opening a huge possibility in spintronics device applications.
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Submitted 11 February, 2009;
originally announced February 2009.
