Showing 1–5 of 5 results for author: Mamaluy, D

Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in $δ$-layer tunnel junctions

Authors: Juan P. Mendez, Denis Mamaluy

Abstract: The precise positioning of dopants in semiconductors using scanning tunneling microscopes has led to the development of planar dopant-based devices, also known as $δ$-layers, facilitating the exploration of new concepts in classical and quantum computing. Recently it have been shown that two distinct conductivity regimes (low- and high- bias regimes) exist in $δ$-layer tunnel junctions due to the… ▽ More The precise positioning of dopants in semiconductors using scanning tunneling microscopes has led to the development of planar dopant-based devices, also known as $δ$-layers, facilitating the exploration of new concepts in classical and quantum computing. Recently it have been shown that two distinct conductivity regimes (low- and high- bias regimes) exist in $δ$-layer tunnel junctions due to the presence of quasi-discrete and continuous states in the conduction band of $δ$-layer systems. Furthermore, discrete charged impurities in the tunnel junction region significantly influence the tunneling rates in $δ$-layer tunnel junctions. Here we demonstrate that zero-charge impurities, or electrical dipoles, present in the tunnel junction region can also significantly alter the tunneling rate, depending, however, on the specific conductivity regime and orientation and moment of the dipole. In the low-bias regime with high-resistance tunneling mode dipole impurities of nearly all orientations and moments can alter the current, indicating the extreme sensitivity of the tunnel current to the slightest imperfection in the tunnel gap. In the high-bias regime with low-resistivity only dipole defects with high moment and orientated in the direction perpendicular to the electron tunneling direction can significantly affect the current, thus making this conductivity regime significantly less prone to the influence of dipole defects with low-moment or dipoles oriented along the propagation direction. △ Less

Submitted 18 December, 2023; v1 submitted 10 October, 2023; originally announced October 2023.

Strong Quantization of Current-carrying Electron States in $δ$-layer Systems

Authors: Denis Mamaluy, Juan P. Mendez

Abstract: We present an open-system quantum-mechanical real-space study of the conductive properties and size quantization in phosphorus $δ$-layers systems, interesting for their beyond-Moore and quantum computing applications. Recently it has been demonstrated that an open-system quantum mechanical treatment provides a much more accurate match to ARPES measurements in highly-conductive, highly-confined sys… ▽ More We present an open-system quantum-mechanical real-space study of the conductive properties and size quantization in phosphorus $δ$-layers systems, interesting for their beyond-Moore and quantum computing applications. Recently it has been demonstrated that an open-system quantum mechanical treatment provides a much more accurate match to ARPES measurements in highly-conductive, highly-confined systems than the traditional approaches (i.e. periodic or Dirichlet boundary conditions) and, furthermore, it allows accurate predictions of conductive properties of such systems from the first principles. Here we reveal that quantization effects are strong for device widths $W<10$~nm, and we show, for the first time, that the number of propagating modes determines not only the conductivity, but the distinctive spatial distribution of the current-carrying electron states. For $W>10$~nm, the quantization effects practically vanish and the conductivity tends to the infinitely-wide device's values. △ Less

Submitted 10 November, 2022; originally announced November 2022.

Comments: arXiv admin note: substantial text overlap with arXiv:2209.06959

Influence of imperfections on tunneling rate in $δ$-layer junctions

Authors: Juan P. Mendez, Shashank Misra, Denis Mamaluy

Abstract: The atomically precise placement of dopants in semiconductors using scanning tunneling microscopes has been used to create planar dopant-based devices, enabling the exploration of novel classical or quantum computing concepts, which often require precise control over tunneling rates in their operation. While the geometry of the dopants can be defined to sub-nanometer precision, imperfections can s… ▽ More The atomically precise placement of dopants in semiconductors using scanning tunneling microscopes has been used to create planar dopant-based devices, enabling the exploration of novel classical or quantum computing concepts, which often require precise control over tunneling rates in their operation. While the geometry of the dopants can be defined to sub-nanometer precision, imperfections can still play a significant role in determining the tunneling rates. Here, we investigate the influence of different imperfections in phosphorous $δ$-layer tunnel junctions in silicon: variations of $δ$-layer thickness and tunnel gap width, interface roughness, and charged impurities. It is found that while most of the imperfections moderately affect the tunneling rate, a single charged impurity in the tunnel gap can alter the tunneling rate by more than an order of magnitude, even for relatively large tunnel gaps. Moreover, it is also revealed that the tunneling rate strongly depends on the electrical charge sign of the impurity. △ Less

Submitted 5 October, 2023; v1 submitted 22 September, 2022; originally announced September 2022.

Conductivity and size quantization effects in semiconductor $δ$-layer systems

Authors: Juan P. Mendez, Denis Mamaluy

Abstract: We present an open-system quantum-mechanical 3D real-space study of the conduction band structure and conductive properties of two semiconductor systems, interesting for their beyond-Moore and quantum computing applications: phosphorus $δ$-layers in silicon and the corresponding $δ$-layer tunnel junctions. In order to evaluate size quantization effects on the conductivity, we consider two principa… ▽ More We present an open-system quantum-mechanical 3D real-space study of the conduction band structure and conductive properties of two semiconductor systems, interesting for their beyond-Moore and quantum computing applications: phosphorus $δ$-layers in silicon and the corresponding $δ$-layer tunnel junctions. In order to evaluate size quantization effects on the conductivity, we consider two principal cases: nanoscale finite-width structures, used in transistors, and infinitely-wide structures, electrical properties of which are typically known experimentally. For devices widths $W<10$~nm, quantization effects are strong and it is shown that the number of propagating modes determines not only the conductivity, but the distinctive spatial distribution of the current-carrying electron states. For $W>10$~nm, the quantization effects practically vanish and the conductivity tends to the infinitely-wide device values. For tunnel junctions, two distinct conductivity regimes are predicted due to the strong conduction band quantization. △ Less

Submitted 22 September, 2022; v1 submitted 14 September, 2022; originally announced September 2022.

Efficient self-consistent quantum transport simulator for quantum devices

Authors: Xujiao Gao, Denis Mamaluy, Erik Nielsen, Ralph W. Young, Amir Shirkhorshidian, Michael P. Lilly, Nathan C. Bishop, Malcolm S. Carroll, Richard P. Muller

Abstract: We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulation of 1D quantum devices. Applying the general CBR approach to 1D open systems results in a set of very simple equations that are derived and given in detail for the first time. The charge self-consistency of the coupled… ▽ More We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulation of 1D quantum devices. Applying the general CBR approach to 1D open systems results in a set of very simple equations that are derived and given in detail for the first time. The charge self-consistency of the coupled CBR-Poisson equations is achieved by using the predictor-corrector iteration scheme with the optional Anderson acceleration. In addition, we introduce a new way to convert an equilibrium electrostatic barrier potential calculated from an external simulator to an effective do** profile, which is then used by the CBR-Poisson code for transport simulation of the barrier under non-zero biases. The code has been applied to simulate the quantum transport in a double barrier structure and across a tunnel barrier in a silicon double quantum dot. Extremely fast self-consistent 1D simulations of the differential conductance across a tunnel barrier in the quantum dot show better qualitative agreement with experiment than non-self-consistent simulations. △ Less

Submitted 28 March, 2014; originally announced March 2014.