Showing 1–24 of 24 results for author: Magnus, W

2D ferromagnetism at finite temperatures under quantum scrutiny

Authors: Joren Vanherck, Cihan Bacaksiz, Bart Sorée, Milorad V. Milošević, Wim Magnus

Abstract: Recent years have seen a tremendous rise of two-dimensional (2D) magnetic materials, several of which verified experimentally. However, most of the theoretical predictions to date rely on ab-initio methods, at zero temperature and fluctuations-free, while one certainly expects detrimental quantum fluctuations at finite temperatures. Here we present the solution of the quantum Heisenberg model for… ▽ More Recent years have seen a tremendous rise of two-dimensional (2D) magnetic materials, several of which verified experimentally. However, most of the theoretical predictions to date rely on ab-initio methods, at zero temperature and fluctuations-free, while one certainly expects detrimental quantum fluctuations at finite temperatures. Here we present the solution of the quantum Heisenberg model for honeycomb/hexagonal lattices with anisotropic exchange interaction up to third nearest neighbors and in an applied field in arbitrary direction, that answers the question whether long-range magnetization can indeed survive in the ultrathin limit of materials, up to which temperature, and what the characteristic excitation (magnon) frequencies are, all essential to envisaged applications of magnetic 2D materials. We find that long-range magnetic order persists at finite temperature for materials with overall easy-axis anisotropy. We validate the calculations on the examples of monolayer CrI3, CrBr3 and MnSe2. Moreover, we provide an easy-to-use tool to calculate Curie temperatures of new 2D computational materials. △ Less

Submitted 10 August, 2020; v1 submitted 5 June, 2020; originally announced June 2020.

Comments: 14 pages, 5 figures. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 117, 052401 (2020) and may be found at https://doi.org/10.1063/5.0015619

Journal ref: Appl. Phys. Lett. 117, 052401 (2020)

Occupation numbers in a quantum canonical ensemble: a projection operator approach

Authors: Wim Magnus, Fons Brosens

Abstract: Recently, we have used a projection operator to fix the number of particles in a second quantization approach in order to deal with the canonical ensemble. Having been applied earlier to handle various problems in nuclear physics that involve fixed particle numbers, the projector formalism was extended to grant access as well to quantum-statistical averages in condensed matter physics, such as par… ▽ More Recently, we have used a projection operator to fix the number of particles in a second quantization approach in order to deal with the canonical ensemble. Having been applied earlier to handle various problems in nuclear physics that involve fixed particle numbers, the projector formalism was extended to grant access as well to quantum-statistical averages in condensed matter physics, such as particle densities and correlation functions. In this light, the occupation numbers of the subsequent single-particle energy eigenstates are key quantities to be examined. The goal of this paper is 1) to provide a sound extension of the projector formalism directly addressing the occupation numbers as well as the chemical potential, and 2) to demonstrate how the emerging problems related to numerical instability for fermions can be resolved to obtain the canonical statistical quantities for both fermions and bosons. △ Less

Submitted 12 September, 2018; originally announced September 2018.

Comments: 23 pages, 8 figures

Theoretical study of scattering in graphene ribbons in the presence of structural and atomistic edge roughness

Authors: Kristof Moors, Antonino Contino, Maarten L. Van de Put, William G. Vandenberghe, Massimo V. Fischetti, Wim Magnus, Bart Sorée

Abstract: We investigate the diffusive electron-transport properties of charge-doped graphene ribbons and nanoribbons with imperfect edges. We consider different regimes of edge scattering, ranging from wide graphene ribbons with (partially) diffusive edge scattering to ribbons with large width variations and nanoribbons with atomistic edge roughness. For the latter, we introduce an approach based on pseudo… ▽ More We investigate the diffusive electron-transport properties of charge-doped graphene ribbons and nanoribbons with imperfect edges. We consider different regimes of edge scattering, ranging from wide graphene ribbons with (partially) diffusive edge scattering to ribbons with large width variations and nanoribbons with atomistic edge roughness. For the latter, we introduce an approach based on pseudopotentials, allowing for an atomistic treatment of the band structure and the scattering potential, on the self-consistent solution of the Boltzmann transport equation within the relaxation-time approximation and taking into account the edge-roughness properties and statistics. The resulting resistivity depends strongly on the ribbon orientation, with zigzag (armchair) ribbons showing the smallest (largest) resistivity and intermediate ribbon orientations exhibiting intermediate resistivity values. The results also show clear resistivity peaks, corresponding to peaks in the density of states due to the confinement-induced subband quantization, except for armchair-edge ribbons that show a very strong width dependence because of their claromatic behavior. Furthermore, we identify a strong interplay between the relative position of the two valleys of graphene along the transport direction, the correlation profile of the atomistic edge roughness, and the chiral valley modes, leading to a peculiar strongly suppressed resistivity regime, most pronounced for the zigzag orientation. △ Less

Submitted 7 February, 2019; v1 submitted 19 July, 2018; originally announced July 2018.

Comments: 13 pages, 7 figures

Journal ref: Phys. Rev. Materials 3, 024001 (2019)

Anisotropic bulk and planar Heisenberg ferromagnets in uniform, arbitrarily oriented magnetic fields

Authors: Joren Vanherck, Bart Sorée, Wim Magnus

Abstract: Today, further downscaling of mobile electronic devices poses serious problems, such as energy consumption and local heat dissipation. In this context, spin wave majority gates made of very thin ferromagnetic films may offer a viable alternative. However, similar downscaling of magnetic thin films eventually enforces the latter to operate as quasi-two dimensional magnets, the magnetic properties o… ▽ More Today, further downscaling of mobile electronic devices poses serious problems, such as energy consumption and local heat dissipation. In this context, spin wave majority gates made of very thin ferromagnetic films may offer a viable alternative. However, similar downscaling of magnetic thin films eventually enforces the latter to operate as quasi-two dimensional magnets, the magnetic properties of which are not yet fully understood, especially those related to anisotropies and external magnetic fields in arbitrary directions. To this end, we have investigated the behaviour of an easy-plane and easy-axis anisotropic ferromagnet -- both in two and three dimensions -- subjected to a uniform magnetic field, applied along an arbitrary direction. In this paper, a spin-1/2 Heisenberg Hamiltonian with anisotropic exchange interactions is solved using double-time temperature-dependent Green's functions and the Tyablikov decoupling approximation. We determine various magnetic properties such as the Curie temperature and the magnetization as a function of temperature and the applied magnetic field, discussing the impact of the system's dimensionality and the type of anisotropy. The magnetic reorientation transition taking place in anisotropic Heisenberg ferromagnets is studied in detail. Importantly, spontaneous magnetization is found to be absent for easy-plane two-dimensional spin systems with short range interactions. △ Less

Submitted 2 April, 2018; originally announced April 2018.

Efficient solution of the Wigner-Liouville equation using a spectral decomposition of the force field

Authors: Maarten L. Van de Put, Bart Sorée, Wim Magnus

Abstract: The Wigner-Liouville equation is reformulated using a spectral decomposition of the classical force field instead of the potential energy. The latter is shown to simplify the Wigner-Liouville kernel both conceptually and numerically as the spectral force Wigner-Liouville equation avoids the numerical evaluation of the highly oscillatory Wigner kernel which is nonlocal in both position and momentum… ▽ More The Wigner-Liouville equation is reformulated using a spectral decomposition of the classical force field instead of the potential energy. The latter is shown to simplify the Wigner-Liouville kernel both conceptually and numerically as the spectral force Wigner-Liouville equation avoids the numerical evaluation of the highly oscillatory Wigner kernel which is nonlocal in both position and momentum. The quantum mechanical evolution is instead governed by a term local in space and non-local in momentum, where the non-locality in momentum has only a limited range. An interpretation of the time evolution in terms of two processes is presented; a classical evolution under the influence of the averaged driving field, and a probability-preserving quantum-mechanical generation and annihilation term. Using the inherent stability and reduced complexity, a direct deterministic numerical implementation using Chebyshev and Fourier pseudo-spectral methods is detailed. For the purpose of illustration, we present results for the time-evolution of a one-dimensional resonant tunneling diode driven out of equilibrium. △ Less

Submitted 26 January, 2018; originally announced January 2018.

Journal ref: Journal of Computational Physics 350 (2017) 314-325

An envelope function formalism for lattice-matched heterostructures

Authors: Maarten L. Van de Put, William G. Vandenberghe, Wim Magnus, Bart Sorée

Abstract: The envelope function method traditionally employs a single basis set which, in practice, relates to a single material because the $k\cdot p$ matrix elements are generally only known in a particular basis. In this work, we defined a basis function transformation to alleviate this restriction. The transformation is completely described by the known inter-band momentum matrix elements. The resulting… ▽ More The envelope function method traditionally employs a single basis set which, in practice, relates to a single material because the $k\cdot p$ matrix elements are generally only known in a particular basis. In this work, we defined a basis function transformation to alleviate this restriction. The transformation is completely described by the known inter-band momentum matrix elements. The resulting envelope function equation can solve the electronic structure in lattice matched heterostructures without resorting to boundary conditions at the interface between materials, while all unit-cell averaged observables can be calculated as with the standard envelope function formalism. In the case of two coupled bands, this heterostructure formalism is equivalent to the standard formalism while taking position dependent matrix elements. △ Less

Submitted 26 January, 2018; originally announced January 2018.

Journal ref: Physica B 470-471 (2015) 69-75

Resistivity scaling model for metals with conduction band anisotropy

Authors: Miguel De Clercq, Kristof Moors, Kiroubanand Sankaran, Geoffrey Pourtois, Shibesh Dutta, Christoph Adelmann, Wim Magnus, Bart Sorée

Abstract: It is generally understood that the resistivity of metal thin films scales with film thickness mainly due to grain boundary and boundary surface scattering. Recently, several experiments and ab initio simulations have demonstrated the impact of crystal orientation on resistivity scaling. The crystal orientation cannot be captured by the commonly used resistivity scaling models and a qualitative un… ▽ More It is generally understood that the resistivity of metal thin films scales with film thickness mainly due to grain boundary and boundary surface scattering. Recently, several experiments and ab initio simulations have demonstrated the impact of crystal orientation on resistivity scaling. The crystal orientation cannot be captured by the commonly used resistivity scaling models and a qualitative understanding of its impact is currently lacking. In this work, we derive a resistivity scaling model that captures grain boundary and boundary surface scattering as well as the anisotropy of the band structure. The model is applied to Cu and Ru thin films, whose conduction bands are (quasi-)isotropic and anisotropic respectively. After calibrating the anisotropy with ab initio simulations, the resistivity scaling models are compared to experimental resistivity data and a renormalization of the fitted grain boundary reflection coefficient can be identified for textured Ru. △ Less

Submitted 7 March, 2018; v1 submitted 2 November, 2017; originally announced November 2017.

Comments: 12 pages, 7 figures

Journal ref: Phys. Rev. Materials 2, 033801 (2018)

The Miniband Alignment Field-Effect Transistor: a superlattice-based steep-slope nanowire FET

Authors: Maarten Thewissen, Bart Sorée, Wim Magnus

Abstract: This work investigates energy filtering in nanowires, where pass and stopbands are obtained by including superlattices in the wire. When a pair of such superlattices is placed in series, each being controlled by a gate, it can act as a transistor where the (mis-)alignment of its minibands turns the device on (off). It is shown that, in the ballistic current-regime, the transition between the on an… ▽ More This work investigates energy filtering in nanowires, where pass and stopbands are obtained by including superlattices in the wire. When a pair of such superlattices is placed in series, each being controlled by a gate, it can act as a transistor where the (mis-)alignment of its minibands turns the device on (off). It is shown that, in the ballistic current-regime, the transition between the on and off state occurs in a narrow gate-bias range, giving rise to sub-60 mV per decade switching behavior. △ Less

Submitted 30 September, 2016; v1 submitted 29 September, 2016; originally announced September 2016.

Resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering

Authors: Kristof Moors, Bart Sorée, Wim Magnus

Abstract: A modeling approach, based on an analytical solution of the semiclassical multi-subband Boltzmann transport equation, is presented to study resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering. While taking into account the detailed statistical properties of grains, roughness and barrier material as well as the metallic band structure and… ▽ More A modeling approach, based on an analytical solution of the semiclassical multi-subband Boltzmann transport equation, is presented to study resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering. While taking into account the detailed statistical properties of grains, roughness and barrier material as well as the metallic band structure and quantum mechanical aspects of scattering and confinement, the model does not rely on phenomenological fitting parameters. △ Less

Submitted 24 October, 2016; v1 submitted 20 June, 2016; originally announced June 2016.

Comments: 11 pages, 7 figures, accepted for publication in Microelectronic Engineering edition on Materials for Advanced Metallization

Journal ref: Microelectronic Engineering 167, 37-41 (2017)

Validity criteria for Fermi's golden rule scattering rates applied to metallic nanowires

Authors: Kristof Moors, Bart Sorée, Wim Magnus

Abstract: Fermi's golden rule underpins the investigation of mobile carriers propagating through various solids, being a standard tool to calculate their scattering rates. As such, it provides a perturbative estimate under the implicit assumption that the effect of the interaction Hamiltonian which causes the scattering events is sufficiently small. To check the validity of this assumption, we present a gen… ▽ More Fermi's golden rule underpins the investigation of mobile carriers propagating through various solids, being a standard tool to calculate their scattering rates. As such, it provides a perturbative estimate under the implicit assumption that the effect of the interaction Hamiltonian which causes the scattering events is sufficiently small. To check the validity of this assumption, we present a general framework to derive simple validity criteria in order to assess whether the scattering rates can be trusted for the system under consideration, given its statistical properties such as average size, electron density, impurity density et cetera. We derive concrete validity criteria for metallic nanowires with conduction electrons populating a single parabolic band subjected to different elastic scattering mechanisms: impurities, grain boundaries and surface roughness. △ Less

Submitted 22 June, 2016; v1 submitted 16 February, 2016; originally announced February 2016.

Comments: 23 pages, 8 figures, revised article version accepted for publication in Journal of Physics: Condensed Matter

Journal ref: J. Phys.: Condens. Matter 28, 365302 (2016)

Inter-ribbon tunneling in graphene: an atomistic Bardeen approach

Authors: Maarten L. Van de Put, William G. Vandenberghe, Bart Sorée, Wim Magnus, Massimo V. Fischetti

Abstract: A weakly coupled system of two crossed graphene nanoribbons exhibits direct tunneling due to the overlap of the wavefunctions of both ribbons. We apply the Bardeen transfer Hamiltonian formalism, using atomistic band structure calculations to account for the effect of the atomic structure on the tunneling process. The strong quantum-size confinement of the nanoribbons is mirrored by the one-dimens… ▽ More A weakly coupled system of two crossed graphene nanoribbons exhibits direct tunneling due to the overlap of the wavefunctions of both ribbons. We apply the Bardeen transfer Hamiltonian formalism, using atomistic band structure calculations to account for the effect of the atomic structure on the tunneling process. The strong quantum-size confinement of the nanoribbons is mirrored by the one-dimensional character of the electronic structure, resulting in properties that differ significantly from the case of inter-layer tunneling, where tunneling occurs between bulk two-dimensional graphene sheets. The current-voltage characteristics of the inter-ribbon tunneling structures exhibit resonance, as well as stepwise increases in current. Both features are caused by the energetic alignment of one-dimensional peaks in the density-of-states of the ribbons. Resonant tunneling occurs if the sign of the curvature of the coupled energy bands is equal, whereas a step-like increase of the current occurs if the signs are opposite. Changing the do** modulates the onset- voltage of the effects as well as their magnitude. Do** through electrostatic gating makes these structures promising for application towards steep slope switching devices. Using the atomistic Bardeen transfer Hamiltonian method, inter-ribbon tunneling can be studied for the whole range of two-dimensional materials, such as transition metal dichalcogenides. The effects of resonance and of step-like increases of the current, observed in graphene ribbons, are also expected in ribbons made from these alternative two-dimensional materials, because these effects are manifestations of the one-dimensional character of the density-of-states. △ Less

Submitted 10 March, 2016; v1 submitted 19 December, 2015; originally announced December 2015.

Journal ref: J. Appl. Phys. 119, 214306 (2016)

Modeling of inter-ribbon tunneling in graphene

Authors: Maarten L. Van de Put, William G. Vandenberghe, Bart Sorée, Wim Magnus, Massimo Fischetti

Abstract: The tunneling current between two crossed graphene ribbons is described invoking the empirical pseudopotential approximation and the Bardeen transfer Hamiltonian method. Results indicate that the density of states is the most important factor determining the tunneling current between small (nm) ribbons. The quasi-one dimensional nature of graphene nanoribbons is shown to result in resonant tunneli… ▽ More The tunneling current between two crossed graphene ribbons is described invoking the empirical pseudopotential approximation and the Bardeen transfer Hamiltonian method. Results indicate that the density of states is the most important factor determining the tunneling current between small (nm) ribbons. The quasi-one dimensional nature of graphene nanoribbons is shown to result in resonant tunneling. △ Less

Submitted 30 September, 2015; originally announced September 2015.

Comments: IWCE 2015 proceedings. Original title: "Overlaps in Stacked Graphene Flakes Using Empirical Pseudopotentials"

Analytic solution of Ando's surface roughness model with finite domain distribution functions

Authors: Kristof Moors, Bart Sorée, Wim Magnus

Abstract: Ando's surface roughness model is applied to metallic nanowires and extended beyond small roughness size and infinite barrier limit approximations for the wavefunction overlaps, such as the Prange-Nee approximation. Accurate and fast simulations can still be performed without invoking these overlap approximations by averaging over roughness profiles using finite domain distribution functions to ob… ▽ More Ando's surface roughness model is applied to metallic nanowires and extended beyond small roughness size and infinite barrier limit approximations for the wavefunction overlaps, such as the Prange-Nee approximation. Accurate and fast simulations can still be performed without invoking these overlap approximations by averaging over roughness profiles using finite domain distribution functions to obtain an analytic solution for the scattering rates. The simulations indicate that overlap approximations, while predicting a resistivity that agrees more or less with our novel approach, poorly estimate the underlying scattering rates. All methods show that a momentum gap between left- and right-moving electrons at the Fermi level, surpassing a critical momentum gap, gives rise to a substantial decrease in resistivity. △ Less

Submitted 29 September, 2015; originally announced September 2015.

Comments: 5 pages, 5 figures

Modeling and tackling resistivity scaling in metal nanowires

Authors: Kristof Moors, Bart Sorée, Wim Magnus

Abstract: A self-consistent analytical solution of the multi-subband Boltzmann transport equation with collision term describing grain boundary and surface roughness scattering is presented to study the resistivity scaling in metal nanowires. The different scattering mechanisms and the influence of their statistical parameters are analyzed. Instead of a simple power law relating the height or width of a nan… ▽ More A self-consistent analytical solution of the multi-subband Boltzmann transport equation with collision term describing grain boundary and surface roughness scattering is presented to study the resistivity scaling in metal nanowires. The different scattering mechanisms and the influence of their statistical parameters are analyzed. Instead of a simple power law relating the height or width of a nanowire to its resistivity, the picture appears to be more complicated due to quantum-mechanical scattering and quantization effects, especially for surface roughness scattering. △ Less

Submitted 14 September, 2015; originally announced September 2015.

Comments: 6 pages, 5 figures

Modeling surface roughness scattering in metallic nanowires

Authors: Kristof Moors, Bart Sorée, Wim Magnus

Abstract: Ando's model provides a rigorous quantum-mechanical framework for electron-surface roughness scattering, based on the detailed roughness structure. We apply this method to metallic nanowires and improve the model introducing surface roughness distribution functions on a finite domain with analytical expressions for the average surface roughness matrix elements. This approach is valid for any rough… ▽ More Ando's model provides a rigorous quantum-mechanical framework for electron-surface roughness scattering, based on the detailed roughness structure. We apply this method to metallic nanowires and improve the model introducing surface roughness distribution functions on a finite domain with analytical expressions for the average surface roughness matrix elements. This approach is valid for any roughness size and extends beyond the commonly used Prange-Nee approximation. The resistivity scaling is obtained from the self-consistent relaxation time solution of the Boltzmann transport equation and is compared to Prange-Nee's approach and other known methods. The results show that a substantial drop in resistivity can be obtained for certain diameters by achieving a large momentum gap between Fermi level states with positive and negative momentum in the transport direction. △ Less

Submitted 14 September, 2015; v1 submitted 9 June, 2015; originally announced June 2015.

Comments: 25 pages, 11 figures

Journal ref: J. Appl. Phys. 118, 124307 (2015)

Quantum canonical ensemble: a projection operator approach

Authors: Wim Magnus, Fons Brosens

Abstract: Fixing the number of particles $N$, the quantum canonical ensemble imposes a constraint on the occupation numbers of single-particle states. The constraint particularly hampers the systematic calculation of the partition function and any relevant thermodynamic expectation value for arbitrary $N$ since, unlike the case of the grand-canonical ensemble, traces in the $N$-particle Hilbert space fail t… ▽ More Fixing the number of particles $N$, the quantum canonical ensemble imposes a constraint on the occupation numbers of single-particle states. The constraint particularly hampers the systematic calculation of the partition function and any relevant thermodynamic expectation value for arbitrary $N$ since, unlike the case of the grand-canonical ensemble, traces in the $N$-particle Hilbert space fail to factorize into simple traces over single-particle states. In this paper we introduce a projection operator that enables a constraint-free computation of the partition function and its derived quantities, at the price of an angular or contour integration. Being applicable to both bosonic and fermionic non-interacting systems in arbitrary dimensions, the projection operator approach provides closed-form expressions for the partition function $Z_N$ and the Helmholtz free energy $F_{\! N}$ as well as for two- and four-point correlation functions. While appearing only as a secondary quantity in the present context, the chemical potential potential emerges as a by-product from the relation $μ_N = F_{\! N+1} - F_{\! N}$, as illustrated for a two-dimensional fermion gas with $N$ ranging between 2 and 500. △ Less

Submitted 22 December, 2016; v1 submitted 19 May, 2015; originally announced May 2015.

Comments: 14 pages, 3 figures

Electron relaxation times and resistivity in metallic nanowires due to tilted grain boundary planes

Authors: Kristof Moors, Bart Sorée, Zsolt Tokei, Wim Magnus

Abstract: We calculate the resistivity contribution of tilted grain boundaries with varying parameters in sub-10nm diameter metallic nanowires. The results have been obtained with the Boltzmann transport equation and Fermi's golden rule, retrieving correct state-dependent relaxation times. The standard approximation schemes for the relaxation times are shown to fail when grain boundary tilt is considered. G… ▽ More We calculate the resistivity contribution of tilted grain boundaries with varying parameters in sub-10nm diameter metallic nanowires. The results have been obtained with the Boltzmann transport equation and Fermi's golden rule, retrieving correct state-dependent relaxation times. The standard approximation schemes for the relaxation times are shown to fail when grain boundary tilt is considered. Grain boundaries tilted under the same angle or randomly tilted induce a resistivity decrease. △ Less

Submitted 14 September, 2015; v1 submitted 27 March, 2015; originally announced March 2015.

Comments: 5 pages, 3 figures in 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

Resistivity scaling and electron relaxation times in metallic nanowires

Authors: Kristof Moors, Bart Sorée, Zsolt Tőkei, Wim Magnus

Abstract: We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grain-boundaries, currently the main cause of electron scattering in nanoscaled interconnects. The resistivity has been obtained with the Boltzmann transport equation, adopting the relaxation time approximation (RTA) of the distribution function and the effective mass approximation for the conducting el… ▽ More We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grain-boundaries, currently the main cause of electron scattering in nanoscaled interconnects. The resistivity has been obtained with the Boltzmann transport equation, adopting the relaxation time approximation (RTA) of the distribution function and the effective mass approximation for the conducting electrons. The relaxation times are calculated exactly, using Fermi's golden rule, resulting in a correct relaxation time for every sub-band state contributing to the transport. In general, the relaxation time strongly depends on the sub-band state, something that remained unclear with the methods of previous work. The resistivity scaling is obtained for different roughness and grain-boundary properties, showing large differences in scaling behavior and relaxation times. Our model clearly indicates that the resistivity is dominated by grain-boundary scattering, easily surpassing the surface roughness contribution by a factor of 10. △ Less

Submitted 9 June, 2015; v1 submitted 28 August, 2014; originally announced August 2014.

Comments: 19 pages, 5 figures

Journal ref: J. Appl. Phys. 116, 063714 (2014)

Quantum diffusion: a simple, exactly solvable model

Authors: Wim Magnus, Kwinten Nelissen

Abstract: We propose a simple quantum mechanical model describing the time dependent diffusion current between two fermion reservoirs that were initially disconnected and characterized by different densities or chemical potentials. The exact, analytical solution of the model yields the transient behavior of the coupled fermion systems evolving to a final steady state, whereas the long-time behavior is deter… ▽ More We propose a simple quantum mechanical model describing the time dependent diffusion current between two fermion reservoirs that were initially disconnected and characterized by different densities or chemical potentials. The exact, analytical solution of the model yields the transient behavior of the coupled fermion systems evolving to a final steady state, whereas the long-time behavior is determined by a power law rather than by exponential decay. Similar results are obtained for the entropy production which is proportional to the diffusion current. △ Less

Submitted 6 December, 2012; originally announced December 2012.

Comments: 9 pages

Wigner distribution functions for complex dynamical systems: a path integral approach

Authors: Dries Sels, Fons Brosens, Wim Magnus

Abstract: Starting from Feynman's Lagrangian description of quantum mechanics, we propose a method to construct explicitly the propagator for the Wigner distribution function of a single system. For general quadratic Lagrangians, only the classical phase space trajectory is found to contribute to the propagator. Inspired by Feynman's and Vernon's influence functional theory we extend the method to calculate… ▽ More Starting from Feynman's Lagrangian description of quantum mechanics, we propose a method to construct explicitly the propagator for the Wigner distribution function of a single system. For general quadratic Lagrangians, only the classical phase space trajectory is found to contribute to the propagator. Inspired by Feynman's and Vernon's influence functional theory we extend the method to calculate the propagator for the reduced Wigner function of a system of interest coupled to an external system. Explicit expressions are obtained when the external system consists of a set of independent harmonic oscillators. As an example we calculate the propagator for the reduced Wigner function associated with the Caldeira-Legett model. △ Less

Submitted 30 July, 2012; originally announced July 2012.

Journal ref: Physica A, 392, 326-335 (2013)

Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach

Authors: William G. Vandenberghe, Bart Sorée, Wim Magnus, Massimo V. Fischetti

Abstract: A general framework to calculate the Zener current in an indirect semiconductor with an externally applied potential is provided. Assuming a parabolic valence and conduction band dispersion, the semiconductor is in equilibrium in the presence of the external field as long as the electronphonon interaction is absent. The linear response to the electron-phonon interaction results in a non-equilibriu… ▽ More A general framework to calculate the Zener current in an indirect semiconductor with an externally applied potential is provided. Assuming a parabolic valence and conduction band dispersion, the semiconductor is in equilibrium in the presence of the external field as long as the electronphonon interaction is absent. The linear response to the electron-phonon interaction results in a non-equilibrium system. The Zener tunneling current is calculated from the number of electrons making the transition from valence to conduction band per unit time. A convenient expression based on the single particle spectral functions is provided, enabling the numerical calculation of the Zener current under any three-dimensional potential profile. For a one dimensional potential profile an analytical expression is obtained for the current in a bulk semiconductor, a semiconductor under uniform field and a semiconductor under a non-uniform field using the WKB (Wentzel-Kramers-Brillouin) approximation. The obtained results agree with the Kane result in the low field limit. A numerical example for abrupt p - n diodes with different do** concentrations is given, from which it can be seen that the uniform field model is a better approximation than the WKB model but a direct numerical treatment is required for low bias conditions. △ Less

Submitted 24 June, 2011; v1 submitted 19 April, 2011; originally announced April 2011.

Comments: 29 pages, 7 figures

Exciton states in cylindrical nanowires

Authors: A. F. Slachmuylders, B. Partoens, W. Magnus, F. Peeters

Abstract: The exciton ground state and excited state energies are calculated for a model system of an infinitely long cylindrical wire. The effective Coulomb potential between the electron and the hole is studied as function of the wire radius. Within the adiabatic approximation, we obtain `exact' numerical results for the effective exciton potential and the lowest exciton energy levels which are fitted t… ▽ More The exciton ground state and excited state energies are calculated for a model system of an infinitely long cylindrical wire. The effective Coulomb potential between the electron and the hole is studied as function of the wire radius. Within the adiabatic approximation, we obtain `exact' numerical results for the effective exciton potential and the lowest exciton energy levels which are fitted to simple analytical expressions. Furthermore, we investigated the influence of a magnetic field parallel to the nanowire on the effective potential and the exciton energy. △ Less

Submitted 16 December, 2005; originally announced December 2005.

Comments: 9 pages, 9 figures. Submitted for publication to PRB. Figures must be downloaded seperately

Quantum Transport in a Nanosize Silicon-on-Insulator Metal-Oxide-Semiconductor

Authors: M. D. Croitoru, V. N. Gladilin, V. M. Fomin, J. T. Devreese, W. Magnus, W. Schoenmaker, B. Soree

Abstract: An approach is developed for the determination of the current flowing through a nanosize silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET). The quantum mechanical features of the electron transport are extracted from the numerical solution of the quantum Liouville equation in the Wigner function representation. Accounting for electron scattering due to ionize… ▽ More An approach is developed for the determination of the current flowing through a nanosize silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET). The quantum mechanical features of the electron transport are extracted from the numerical solution of the quantum Liouville equation in the Wigner function representation. Accounting for electron scattering due to ionized impurities, acoustic phonons and surface roughness at the Si/SiO2 interface, device characteristics are obtained as a function of a channel length. From the Wigner function distributions, the coexistence of the diffusive and the ballistic transport naturally emerges. It is shown that the scattering mechanisms tend to reduce the ballistic component of the transport. The ballistic component increases with decreasing the channel length. △ Less

Submitted 25 August, 2003; originally announced August 2003.

Comments: 21 pages, 8 figures, E-mail addresses: [email protected]

Report number: TFVS-2003-7

Journal ref: J. Appl. Phys. 93, 1230 (2003)

Quantum transport in the cylindrical nanosize silicon-based MOSFET

Authors: S. N. Balaban, E. P. Pokatilov, V. M. Fomin, V. N. Gladilin, J. T. Devreese, W. Magnus, W. Schoenmaker, M. Van Rossum, B. Soree

Abstract: A model is developed for a detailed investigation of the current flowing through a cylindrical nanosize MOSFET with a close gate electrode. The quantum mechanical features of the lateral charge transport are described by Wigner distribution function which is explicitly dealing with electron scattering due to acoustic phonons and acceptor impurities. A numerical simulation is carried out to obtai… ▽ More A model is developed for a detailed investigation of the current flowing through a cylindrical nanosize MOSFET with a close gate electrode. The quantum mechanical features of the lateral charge transport are described by Wigner distribution function which is explicitly dealing with electron scattering due to acoustic phonons and acceptor impurities. A numerical simulation is carried out to obtain a set of I-V characteristics for various channel lengths. It is demonstrated that inclusion of the collision term in the numerical simulation is important for low values of the source-drain voltage. The calculations have further shown that the scattering leads to an increase of the electron density in the channel thereby smoothing out the threshold kink in I-V characteristics. An analysis of the electron phase-space distribution shows that scattering does not prevent electrons from flowing through the channel as a narrow stream, and that features of both ballistic and diffusive transport may be observed simultaneously. △ Less

Submitted 2 April, 2000; originally announced April 2000.

Comments: 24 pages, 8 figures, E-mail addresses: [email protected], [email protected]

Report number: TFVS-2000-05