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Cerium Oxide-based Solid-State Thermal Transistors with Wide Switching Width of 9.5 W/mK
Authors:
Ahrong Jeong,
Mitsuki Yoshimura,
Zhi** Bian,
Jason Tam,
Bin Feng,
Yuichi Ikuhara,
Yusaku Magari,
Takashi Endo,
Yasutaka Matsuo,
Hiromichi Ohta
Abstract:
Thermal transistors that electrically switch heat flow on and off have attracted attention as thermal management devices. Electrochemical reduction/oxidation switches the thermal conductivity (\k{appa}) of active metal oxide layers. The \k{appa}-switching width (difference between on-state and off-state \k{appa}) of the previously proposed electrochemical thermal transistors is narrow, less than 5…
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Thermal transistors that electrically switch heat flow on and off have attracted attention as thermal management devices. Electrochemical reduction/oxidation switches the thermal conductivity (\k{appa}) of active metal oxide layers. The \k{appa}-switching width (difference between on-state and off-state \k{appa}) of the previously proposed electrochemical thermal transistors is narrow, less than 5 W/mK. Here, we show solid-state electrochemical thermal transistors with a wide \k{appa}-switching width of 9.5 W/mK. We used CeO2 thin film as the active layer directly deposited on a solid electrolyte YSZ substrate. A Pt thin film was deposited on the surface of the CeO2 thin film and the back surface of the YSZ substrate to create a solid-state electrochemical thermal transistor. When the CeO2 thin film was once reduced (off-state) and then oxidized (on-state), the \k{appa} was approximately 2.5 W/mK in its most reduced state, and \k{appa} increased with oxidation to 11.8 W/mK (on-state). This reduction (off-state)/oxidation (on-state) cycle was repeated five times and the average value of \k{appa} was 2.5 W/mK after reduction (off-state) and 12 W/mK after oxidation (on-state). The \k{appa}-switching width was 9.5 W/mK. The CeO2-based solid-state electrochemical thermal transistors are potential materials for thermal shutters and thermal displays.
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Submitted 30 April, 2024;
originally announced April 2024.
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Solid-State Electrochemical Thermal Transistors with Large Thermal Conductivity Switching Widths
Authors:
Zhi** Bian,
Mitsuki Yoshimura,
Ahrong Jeong,
Haobo Li,
Takashi Endo,
Yasutaka Matsuo,
Yusaku Magari,
Hidekazu Tanaka,
Hiromichi Ohta
Abstract:
Thermal transistors that switch the thermal conductivity (\k{appa}) of the active layers are attracting increasing attention as thermal management devices. For electrochemical thermal transistors, several transition metal oxides (TMOs) have been proposed as active layers. After electrochemical redox treatment, the crystal structure of the TMO is modulated, which results in the \k{appa} switching.…
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Thermal transistors that switch the thermal conductivity (\k{appa}) of the active layers are attracting increasing attention as thermal management devices. For electrochemical thermal transistors, several transition metal oxides (TMOs) have been proposed as active layers. After electrochemical redox treatment, the crystal structure of the TMO is modulated, which results in the \k{appa} switching. However, the \k{appa} switching width is still small (< 4 W/mK). In this study, we demonstrate that LaNiOx-based solid-state electrochemical thermal transistors have a \k{appa} switching width of 4.3 W/mK. Fully oxidised LaNiO3 (on state) has a \k{appa} of 6.0 W/mK due to the large contribution of electron thermal conductivity (\k{appa}ele, 3.1 W/mK). In contrast, reduced LaNiO2.72 (off state) has a \k{appa} of 1.7 W/mK because the phonons are scattered by the oxygen vacancies. The LaNiOx-based electrochemical thermal transistor exhibits excellent cyclability of \k{appa} and the crystalline lattice of LaNiOx. This electrochemical thermal transistor may be a promising platform for next-generation devices such as thermal displays.
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Submitted 12 April, 2024;
originally announced April 2024.
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Reliable operation in high-mobility indium oxide thin film transistors
Authors:
Prashant R. Ghediya,
Yusaku Magari,
Hikaru Sadahira,
Takashi Endo,
Mamoru Furuta,
Yuqiao Zhang,
Yasutaka Matsuo,
Hiromichi Ohta
Abstract:
Transparent oxide semiconductors (TOSs) based thin-film transistors (TFTs) that exhibit higher field effect mobility (uFE) are highly required toward the realization of next-generation displays. Among numerous types of TOS-TFTs, In2O3-based TFTs are the front-running candidate because they exhibit the highest uFE ~100 cm2/Vs. However, the device operation of In2O3 TFTs is unreliable; a large volta…
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Transparent oxide semiconductors (TOSs) based thin-film transistors (TFTs) that exhibit higher field effect mobility (uFE) are highly required toward the realization of next-generation displays. Among numerous types of TOS-TFTs, In2O3-based TFTs are the front-running candidate because they exhibit the highest uFE ~100 cm2/Vs. However, the device operation of In2O3 TFTs is unreliable; a large voltage shift occurs especially when negative gate bias is applied due to adsorption/desorption of gas molecules. Although passivation of the TFTs is used to overcome such instability, previously proposed passivation materials did not improve the reliability. Here, we show that the In2O3 TFTs passivated with Y2O3 and Er2O3 films are highly reliable and do not show threshold voltage shifts when applying gate bias. We applied positive and negative gate bias to the In2O3 TFTs passivated with various insulating oxides and found that only the In2O3 TFTs passivated with Y2O3 and Er2O3 films did not exhibit threshold voltage shifts. We observed that only the Y2O3 grew heteroepitaxially on the In2O3 crystal. This would be the origin of the high reliability of the In2O3 TFTs passivated with Y2O3 and Er2O3 films. This finding accelerates the development of next-generation displays using high-mobility In2O3 TFTs.
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Submitted 4 April, 2024;
originally announced April 2024.
