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Interferometric Single-Shot Parity Measurement in an InAs-Al Hybrid Device
Authors:
Morteza Aghaee,
Alejandro Alcaraz Ramirez,
Zulfi Alam,
Rizwan Ali,
Mariusz Andrzejczuk,
Andrey Antipov,
Mikhail Astafev,
Amin Barzegar,
Bela Bauer,
Jonathan Becker,
Umesh Kumar Bhaskar,
Alex Bocharov,
Srini Boddapati,
David Bohn,
Jouri Bommer,
Leo Bourdet,
Arnaud Bousquet,
Samuel Boutin,
Lucas Casparis,
Benjamin James Chapman,
Sohail Chatoor,
Anna Wulff Christensen,
Cassandra Chua,
Patrick Codd,
William Cole
, et al. (137 additional authors not shown)
Abstract:
The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostruct…
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The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostructures with a gate-defined nanowire. The interferometer is formed by tunnel-coupling the proximitized nanowire to quantum dots. The nanowire causes a state-dependent shift of these quantum dots' quantum capacitance of up to 1 fF. Our quantum capacitance measurements show flux h/2e-periodic bimodality with a signal-to-noise ratio of 1 in 3.7 $μ$s at optimal flux values. From the time traces of the quantum capacitance measurements, we extract a dwell time in the two associated states that is longer than 1 ms at in-plane magnetic fields of approximately 2 T. These results are consistent with a measurement of the fermion parity encoded in a pair of Majorana zero modes that are separated by approximately 3 $μ$m and subjected to a low rate of poisoning by non-equilibrium quasiparticles. The large capacitance shift and long poisoning time enable a parity measurement error probability of 1%.
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Submitted 2 April, 2024; v1 submitted 17 January, 2024;
originally announced January 2024.
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InAs-Al Hybrid Devices Passing the Topological Gap Protocol
Authors:
Morteza Aghaee,
Arun Akkala,
Zulfi Alam,
Rizwan Ali,
Alejandro Alcaraz Ramirez,
Mariusz Andrzejczuk,
Andrey E Antipov,
Pavel Aseev,
Mikhail Astafev,
Bela Bauer,
Jonathan Becker,
Srini Boddapati,
Frenk Boekhout,
Jouri Bommer,
Esben Bork Hansen,
Tom Bosma,
Leo Bourdet,
Samuel Boutin,
Philippe Caroff,
Lucas Casparis,
Maja Cassidy,
Anna Wulf Christensen,
Noah Clay,
William S Cole,
Fabiano Corsetti
, et al. (102 additional authors not shown)
Abstract:
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-loca…
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We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-local transport properties and have been optimized via extensive simulations to ensure robustness against non-uniformity and disorder. Our main result is that several devices, fabricated according to the design's engineering specifications, have passed the topological gap protocol defined in Pikulin et al. [arXiv:2103.12217]. This protocol is a stringent test composed of a sequence of three-terminal local and non-local transport measurements performed while varying the magnetic field, semiconductor electron density, and junction transparencies. Passing the protocol indicates a high probability of detection of a topological phase hosting Majorana zero modes as determined by large-scale disorder simulations. Our experimental results are consistent with a quantum phase transition into a topological superconducting phase that extends over several hundred millitesla in magnetic field and several millivolts in gate voltage, corresponding to approximately one hundred micro-electron-volts in Zeeman energy and chemical potential in the semiconducting wire. These regions feature a closing and re-opening of the bulk gap, with simultaneous zero-bias conductance peaks at both ends of the devices that withstand changes in the junction transparencies. The extracted maximum topological gaps in our devices are 20-60 $μ$eV. This demonstration is a prerequisite for experiments involving fusion and braiding of Majorana zero modes.
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Submitted 8 March, 2024; v1 submitted 6 July, 2022;
originally announced July 2022.
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Selective Area Growth Rates of III-V Nanowires
Authors:
Martin Espiñeira Cachaza,
Anna Wulff Christensen,
Daria Beznasyuk,
Tobias Særkjær,
Morten Hannibal Madsen,
Rawa Tanta,
Gunjan Nagda,
Sergej Schuwalow,
Peter Krogstrup
Abstract:
Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and desorption mechanisms that govern the growth rates of SAG nanowire (NW) arrays. We propose a model for the crystal growth rates that considers two parameter groups: the crystal growth control parameters and the design…
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Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and desorption mechanisms that govern the growth rates of SAG nanowire (NW) arrays. We propose a model for the crystal growth rates that considers two parameter groups: the crystal growth control parameters and the design parameters. Using GaAs and InGaAs SAG NWs as platform we show how the design parameters such as NW pitch, width, and orientation have an impact on the growth rates. We demonstrate that by varying the control parameters (i.e. substrate temperature and beam fluxes) source, balance, and sink growth modes may exist in the SAG selectivity window. Using this model, we show that inhomogeneous growth rates can be compensated by tuning the design parameters.
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Submitted 1 September, 2021; v1 submitted 18 June, 2021;
originally announced June 2021.
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Yu-Shiba-Rusinov screening of spins in double quantum dots
Authors:
K. Grove-Rasmussen,
G. Steffensen,
A. Jellinggaard,
M. H. Madsen,
R. Žitko,
J. Paaske,
J. Nygård
Abstract:
A magnetic impurity coupled to a superconductor gives rise to a Yu-Shiba-Rusinov (YSR) state inside the superconducting energy gap. With increasing exchange coupling the excitation energy of this state eventually crosses zero and the system switches to a YSR groundstate with bound quasiparticles screening the impurity spin by $\hbar/2$. Here we explore InAs nanowire double quantum dots tunnel coup…
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A magnetic impurity coupled to a superconductor gives rise to a Yu-Shiba-Rusinov (YSR) state inside the superconducting energy gap. With increasing exchange coupling the excitation energy of this state eventually crosses zero and the system switches to a YSR groundstate with bound quasiparticles screening the impurity spin by $\hbar/2$. Here we explore InAs nanowire double quantum dots tunnel coupled to a superconductor and demonstrate YSR screening of spin-1/2 and spin-1 states. Gating the double dot through 9 different charge states, we show that the honeycomb pattern of zero-bias conductance peaks, archetypal of double dots coupled to normal leads, is replaced by lines of zero-energy YSR states. These enclose regions of YSR-screened dot spins displaying distinctive spectral features, and their characteristic shape and topology change markedly with tunnel coupling strengths. We find excellent agreement with a simple zero-bandwidth approximation, and with numerical renormalization group calculations for the two-orbital Anderson model.
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Submitted 16 November, 2017;
originally announced November 2017.
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Tuning Yu-Shiba-Rusinov States in a Quantum Dot
Authors:
Anders Jellinggaard,
Kasper Grove-Rasmussen,
Morten Hannibal Madsen,
Jesper Nygård
Abstract:
We present transport spectroscopy of sub-gap states in a bottom gated InAs nanowire coupled to a normal lead and a superconducting aluminium lead. The device shows clearly resolved sub-gap states which we can track as the coupling parameters of the system are tuned and as the gap is closed by means of a magnetic field. We systematically extract system parameters by using numerical renormalization…
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We present transport spectroscopy of sub-gap states in a bottom gated InAs nanowire coupled to a normal lead and a superconducting aluminium lead. The device shows clearly resolved sub-gap states which we can track as the coupling parameters of the system are tuned and as the gap is closed by means of a magnetic field. We systematically extract system parameters by using numerical renormalization group theory fits as a level of the quantum dot is tuned through a quantum phase transition electrostatically and magnetically. We also give an intuitive description of sub-gap excitations.
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Submitted 13 September, 2016;
originally announced September 2016.
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Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates
Authors:
G. Fábián,
P. Makk,
M. H. Madsen,
J. Nygård,
C. Schönenberger,
A. Baumgartner
Abstract:
We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime using the FSGs and a backgate. In both regimes we find a strong MR and a sharp MR switching of up to 25\% at the field at which the magnetizations of the FSGs are i…
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We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime using the FSGs and a backgate. In both regimes we find a strong MR and a sharp MR switching of up to 25\% at the field at which the magnetizations of the FSGs are inverted by the external field. The sign and amplitude of the MR and the MR switching can both be tuned electrically by the FSGs. In a double dot regime close to pinch-off we find {\it two} sharp transitions in the conductance, reminiscent of tunneling MR (TMR) between two ferromagnetic contacts, with one transition near zero and one at the FSG switching fields. These surprisingly rich characteristics we explain in several simple resonant tunneling models. For example, the TMR-like MR can be understood as a stray-field controlled transition between singlet and a triplet double dot states. Such local magnetic fields are the key elements in various proposals to engineer novel states of matter and may be used for testing electron spin-based Bell inequalities.
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Submitted 25 August, 2016;
originally announced August 2016.
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Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation
Authors:
R. Tanta,
M. H. Madsen,
Z. Liao,
P. Krogstrup,
T. Vosch,
J. Nygard,
T. S. Jespersen
Abstract:
The thermal gradient along indium-arsenide nanowires was engineered by a combination of fabricated micro- trenches in the supporting substrate and focused laser irradiation. This allowed local control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman map**, and the results were found consist…
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The thermal gradient along indium-arsenide nanowires was engineered by a combination of fabricated micro- trenches in the supporting substrate and focused laser irradiation. This allowed local control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman map**, and the results were found consistent with numerical simulations of the temperature profile. Applying the technique to nanowires in electrical devices the locally oxidized nanowires remained conducting with a lower conductance as expected for an effectively thinner conducting core.
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Submitted 25 January, 2016;
originally announced January 2016.
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Electrical tuning of Rashba spin-orbit interaction in multigated InAs nanowires
Authors:
Zoltán Scherübl,
Gergő Fülöp,
Morten Hannibal Madsen,
Jesper Nygård,
Szabolcs Csonka
Abstract:
Indium arsenide (InAs) nanowires (NWs) are a promising platform to fabricate quantum electronic devices, among others they have strong spin-orbit interaction (SOI). The controlled tuning of the SOI is desired in spin based quantum devices. In this study we investigate the possibility of tuning the SOI by electrostatic field, which is generated by a back gate and two side gates placed on the opposi…
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Indium arsenide (InAs) nanowires (NWs) are a promising platform to fabricate quantum electronic devices, among others they have strong spin-orbit interaction (SOI). The controlled tuning of the SOI is desired in spin based quantum devices. In this study we investigate the possibility of tuning the SOI by electrostatic field, which is generated by a back gate and two side gates placed on the opposite sides of the NW. The strength of the SOI is analyzed by weak anti-localization effect. We demonstrate that the strength of SOI can be strongly tuned by a factor of 2 with the electric field across the NW, while the average electron density is kept constant. Furthermore a simple electrostatic model is introduced to calculate the expected change of SOI. Good agreement is found between the experimental results and the estimated Rashba type SOI generated by the gate-induced electric field.
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Submitted 8 January, 2016;
originally announced January 2016.
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Giga-Hertz quantized charge pum** in bottom gate defined InAs nanowire quantum dots
Authors:
S. d'Hollosy,
M. Jung,
A. Baumgartner,
V. A. Guzenko,
M. H. Madsen,
J. Nygård,
C. Schönenberger
Abstract:
Semiconducting nanowires (NWs) are a versatile, highly tunable material platform at the heart of many new developments in nanoscale and quantum physics. Here, we demonstrate charge pum**, i.e., the controlled transport of individual electrons through an InAs NW quantum dot (QD) device at frequencies up to $1.3\,$GHz. The QD is induced electrostatically in the NW by a series of local bottom gates…
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Semiconducting nanowires (NWs) are a versatile, highly tunable material platform at the heart of many new developments in nanoscale and quantum physics. Here, we demonstrate charge pum**, i.e., the controlled transport of individual electrons through an InAs NW quantum dot (QD) device at frequencies up to $1.3\,$GHz. The QD is induced electrostatically in the NW by a series of local bottom gates in a state of the art device geometry. A periodic modulation of a single gate is enough to obtain a dc current proportional to the frequency of the modulation. The dc bias, the modulation amplitude and the gate voltages on the local gates can be used to control the number of charges conveyed per cycle. Charge pum** in InAs NWs is relevant not only in metrology as a current standard, but also opens up the opportunity to investigate a variety of exotic states of matter, e.g. Majorana modes, by single electron spectroscopy and correlation experiments.
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Submitted 4 September, 2015;
originally announced September 2015.
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Magnetic field tuning and quantum interference in a Cooper pair splitter
Authors:
G. Fülöp,
F. Domínguez,
S. d'Hollosy,
A. Baumgartner,
P. Makk,
M. H. Madsen,
V. A. Guzenko,
J. Nygård,
C. Schönenberger,
A. Levy Yeyati,
S. Csonka
Abstract:
Cooper pair splitting (CPS) is a process in which the electrons of naturally occurring spin-singlet pairs in a superconductor are spatially separated using two quantum dots. Here we investigate the evolution of the conductance correlations in an InAs CPS device in the presence of an external magnetic field. In our experiments the gate dependence of the signal that depends on both quantum dots cont…
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Cooper pair splitting (CPS) is a process in which the electrons of naturally occurring spin-singlet pairs in a superconductor are spatially separated using two quantum dots. Here we investigate the evolution of the conductance correlations in an InAs CPS device in the presence of an external magnetic field. In our experiments the gate dependence of the signal that depends on both quantum dots continuously evolves from a slightly asymmetric Lorentzian to a strongly asymmetric Fano-type resonance with increasing field. These experiments can be understood in a simple three - site model, which shows that the nonlocal CPS leads to symmetric line shapes, while the local transport processes can exhibit an asymmetric shape due to quantum interference. These findings demonstrate that the electrons from a Cooper pair splitter can propagate coherently after their emission from the superconductor and how a magnetic field can be used to optimize the performance of a CPS device. In addition, the model calculations suggest that the estimate of the CPS efficiency in the experiments is a lower bound for the actual efficiency.
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Submitted 17 July, 2015; v1 submitted 3 July, 2015;
originally announced July 2015.
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Epitaxy of Semiconductor-Superconductor nanowires
Authors:
P. Krogstrup,
N. L. B. Ziino,
W. Chang,
S. M. Albrecht,
M. H. Madsen,
E. Johnson,
J. Nygård,
C. M. Marcus,
T. S. Jespersen
Abstract:
Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role for the quality of the induced superconducting gap. Here we present epitaxial growth…
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Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role for the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and for designing devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al, are grown with epitaxially matched single plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and appears to solve the soft-gap problem in superconducting hybrid structures.
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Submitted 26 November, 2014; v1 submitted 23 November, 2014;
originally announced November 2014.
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Local electrical tuning of the nonlocal signals in a Cooper pair splitter
Authors:
G. Fülöp,
S. d'Hollosy,
A. Baumgartner,
P. Makk,
V. A. Guzenko,
M. H. Madsen,
J. Nygård,
C. Schönenberger,
S. Csonka
Abstract:
A Cooper pair splitter consists of a central superconducting contact, S, from which electrons are injected into two parallel, spatially separated quantum dots (QDs). This geometry and electron interactions can lead to correlated electrical currents due to the spatial separation of spin-singlet Cooper pairs from S. We present experiments on such a device with a series of bottom gates, which allows…
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A Cooper pair splitter consists of a central superconducting contact, S, from which electrons are injected into two parallel, spatially separated quantum dots (QDs). This geometry and electron interactions can lead to correlated electrical currents due to the spatial separation of spin-singlet Cooper pairs from S. We present experiments on such a device with a series of bottom gates, which allows for spatially resolved tuning of the tunnel couplings between the QDs and the electrical contacts and between the QDs. Our main findings are gate-induced transitions between positive conductance correlation in the QDs due to Cooper pair splitting and negative correlations due to QD dynamics. Using a semi-classical rate equation model we show that the experimental findings are consistent with in-situ electrical tuning of the local and nonlocal quantum transport processes. In particular, we illustrate how the competition between Cooper pair splitting and local processes can be optimized in such hybrid nanostructures.
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Submitted 2 September, 2014;
originally announced September 2014.
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Epitaxial aluminum contacts to InAs nanowires
Authors:
N. L. B. Ziino,
P. Krogstrup,
M. H. Madsen,
E. Johnson,
J. B. Wagner,
C. M. Marcus,
J. Nygård,
T. S. Jespersen
Abstract:
We report a method for making epitaxial superconducting contacts to semiconducting nanowires. The temperature and gate characteristics demonstrate barrier-free electrical contact, and the properties in the superconducting state are investigated at low temperature. Half-covering aluminum contacts are realized without the need of lithography and we demonstrate how to controllably insert high-band ga…
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We report a method for making epitaxial superconducting contacts to semiconducting nanowires. The temperature and gate characteristics demonstrate barrier-free electrical contact, and the properties in the superconducting state are investigated at low temperature. Half-covering aluminum contacts are realized without the need of lithography and we demonstrate how to controllably insert high-band gap layers in the interface region. These developments are relevant to hybrid superconductor-nanowire devices that support Majorana zero energy states.
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Submitted 18 September, 2013;
originally announced September 2013.
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Direct Observation of Interface and Nanoscale Compositional Modulation in Ternary III-As Heterostructure Nanowires
Authors:
Sriram Venkatesan,
Morten H. Madsen,
Herbert Schmid,
Peter Krogstrup,
Erik Johnson,
Christina Scheu
Abstract:
Straight, axial InAs nanowire with multiple segments of GaInAs were grown. High resolution X-ray energy-dispersive spectroscopy (EDS) map** reveal the distribution of group III atoms at the axial interfaces and at the sidewalls. Significant Ga enrichment, accompanied by a structural change is observed at the GaInAs/InAs interfaces and a higher Ga concentration for the early grown GaInAs segments…
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Straight, axial InAs nanowire with multiple segments of GaInAs were grown. High resolution X-ray energy-dispersive spectroscopy (EDS) map** reveal the distribution of group III atoms at the axial interfaces and at the sidewalls. Significant Ga enrichment, accompanied by a structural change is observed at the GaInAs/InAs interfaces and a higher Ga concentration for the early grown GaInAs segments. The elemental map and EDS line profile infer Ga enrichment at the facet junctions between the sidewalls. The relative chemical potentials of ternary alloys and the thermodynamic driving force for liquid to solid transition explains the growth mechanisms behind the enrichment.
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Submitted 23 August, 2013;
originally announced August 2013.
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Advances in the theory of III-V Nanowire Growth Dynamics
Authors:
Peter Krogstrup,
Henrik I. Jørgensen,
Erik Johnson,
Morten Hannibal Madsen,
Claus B. Sørensen,
Anna Fontcuberta i Morral,
Martin Aagesen,
Jesper Nygård,
Frank Glas
Abstract:
Nanowire (NW) crystal growth via the vapour_liquid_solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With increasing speed over the last few decades many works have reported on various aspects of the growth mechanisms, both experimentally and theoretically. We will here propose a general continuum formalism for growth kinetics b…
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Nanowire (NW) crystal growth via the vapour_liquid_solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With increasing speed over the last few decades many works have reported on various aspects of the growth mechanisms, both experimentally and theoretically. We will here propose a general continuum formalism for growth kinetics based on thermodynamic parameters and transition state kinetics. We use the formalism together with key elements of recent research to present a more overall treatment of III_V NW growth, which can serve as a basis to model and understand the dynamical mechanisms in terms of the basic control parameters, temperature and pressures/beam fluxes. Self-catalysed GaAs NW growth on Si substrates by molecular beam epitaxy is used as a model system.
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Submitted 17 July, 2013; v1 submitted 30 January, 2013;
originally announced January 2013.
