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Distinguishing Surface and Bulk Electromagnetism via Their Dynamics in an Intrinsic Magnetic Topological Insulator
Authors:
Khanh Duy Nguyen,
Woojoo Lee,
Jianchen Dang,
Tongyao Wu,
Gabriele Berruto,
Chenhui Yan,
Chi Ian Jess Ip,
Haoran Lin,
Qiang Gao,
Seng Huat Lee,
Binghai Yan,
Chaoxing Liu,
Zhiqiang Mao,
Xiao-Xiao Zhang,
Shuolong Yang
Abstract:
The indirect exchange interaction between local magnetic moments via surface electrons has been long predicted to bolster the surface ferromagnetism in magnetic topological insulators (MTIs), which facilitates the quantum anomalous Hall effect. This unconventional effect is critical to determining the operating temperatures of future topotronic devices. However, the experimental confirmation of th…
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The indirect exchange interaction between local magnetic moments via surface electrons has been long predicted to bolster the surface ferromagnetism in magnetic topological insulators (MTIs), which facilitates the quantum anomalous Hall effect. This unconventional effect is critical to determining the operating temperatures of future topotronic devices. However, the experimental confirmation of this mechanism remains elusive, especially in intrinsic MTIs. Here we combine time-resolved photoemission spectroscopy with time-resolved magneto-optical Kerr effect measurements to elucidate the unique electromagnetism at the surface of an intrinsic MTI MnBi2Te4. Theoretical modeling based on 2D Ruderman-Kittel-Kasuya-Yosida interactions captures the initial quenching of a surface-rooted exchange gap within a factor of two but over-estimates the bulk demagnetization by one order of magnitude. This mechanism directly explains the sizable gap in the quasi-2D electronic state and the nonzero residual magnetization in even-layer MnBi2Te4. Furthermore, it leads to efficient light-induced demagnetization comparable to state-of-the-art magnetophotonic crystals, promising an effective manipulation of magnetism and topological orders for future topotronics.
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Submitted 28 June, 2024;
originally announced July 2024.
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Structural and Electrical Properties of Grafted Si/GaAsSb Heterojunction
Authors:
Haris Naeem Abbasi,
Seunghyun Lee,
Hyemin Jung,
Nathan Gajowski,
Yi Lu,
Linus Wang,
Donghyeok Kim,
Jie Zhou,
Jiarui Gong,
Chris Chae,
**woo Hwang,
Manisha Muduli,
Subramanya Nookala,
Zhenqiang Ma,
Sanjay Krishna
Abstract:
The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a receiver in these systems due to their internal gain which enhances the system performance. Silicon-based APDs are promising since they are CMOS compatible, but they…
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The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a receiver in these systems due to their internal gain which enhances the system performance. Silicon-based APDs are promising since they are CMOS compatible, but they are limited in detecting 1.55 um light detection. This study proposes a p-type Si on n-type GaAs0.51Sb0.49 (GaAsSb) lattice matched to InP substrates heterojunction formed using a grafting technique for future GaAsSb/Si APD technology. A p+Si nanomembrane is transferred onto the GaAsSb/AlInAs/InP substrate, with an ultrathin ALD-Al2O3 oxide at the interface, which behaves as both double-side passivation and quantum tunneling layers. The devices exhibit excellent surface morphology and interface quality, confirmed by atomic force microscope (AFM) and transmission electron microscope (TEM). Also, the current-voltage (I-V) of the p+Si/n-GaAsSb heterojunction shows ideal rectifying characteristics with an ideality factor of 1.15. The I-V tests across multiple devices confirm high consistency and yield. Furthermore, the X-ray photoelectron spectroscopy (XPS) measurement reveals that GaAsSb and Si are found to have type-II band alignment with a conduction band offset of 50 meV which is favorable for the high-bandwidth APD application. The demonstration of the GaAsSb/Si heterojunction highlights the potential to advance current SWIR PD technologies.
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Submitted 24 June, 2024; v1 submitted 20 June, 2024;
originally announced June 2024.
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Chiral π Domain Walls Composed of Twin Half-Integer Surface Disclinations in Ferroelectric Nematic Liquid Crystals
Authors:
Shengzhu Yi,
Zening Hong,
Zhongjie Ma,
Chao Zhou,
Miao Jiang,
Xiang Huang,
Mingjun Huang,
Satoshi Aya,
Rui Zhang,
Qi-Huo Wei
Abstract:
Ferroelectric nematic liquid crystals are polar fluids characterized by microscopic orientational ordering and macroscopic spontaneous polarizations. Within these fluids, walls that separate domains of different polarizations are ubiquitous. We demonstrate that the π walls in films of polar fluids consist of twin half-integer surface disclinations spaced horizontally, enclosing a subdomain where t…
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Ferroelectric nematic liquid crystals are polar fluids characterized by microscopic orientational ordering and macroscopic spontaneous polarizations. Within these fluids, walls that separate domains of different polarizations are ubiquitous. We demonstrate that the π walls in films of polar fluids consist of twin half-integer surface disclinations spaced horizontally, enclosing a subdomain where the polarization exhibits left- or right-handed π twists across the film. The degenerate geometric configurations of these twin disclinations give rise to kinks and antikinks, effectively partitioning subdomains of opposite chirality like Ising chains. The hierarchical topological structures dictate that field-driven polar switching entails a two-step annihilation process of the disclinations. These findings serve as a cornerstone for comprehending other walls in ferroelectric and ferromagnetic materials, thereby laying the base for domain engineering crucial for advancing their nonlinear and optoelectronic applications.
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Submitted 19 June, 2024;
originally announced June 2024.
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Molecule Graph Networks with Many-body Equivariant Interactions
Authors:
Zetian Mao,
Jiawen Li,
Chen Liang,
Diptesh Das,
Masato Sumita,
Koji Tsuda
Abstract:
Message passing neural networks have demonstrated significant efficacy in predicting molecular interactions. Introducing equivariant vectorial representations augments expressivity by capturing geometric data symmetries, thereby improving model accuracy. However, two-body bond vectors in opposition may cancel each other out during message passing, leading to the loss of directional information on…
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Message passing neural networks have demonstrated significant efficacy in predicting molecular interactions. Introducing equivariant vectorial representations augments expressivity by capturing geometric data symmetries, thereby improving model accuracy. However, two-body bond vectors in opposition may cancel each other out during message passing, leading to the loss of directional information on their shared node. In this study, we develop Equivariant N-body Interaction Networks (ENINet) that explicitly integrates equivariant many-body interactions to preserve directional information in the message passing scheme. Experiments indicate that integrating many-body equivariant representations enhances prediction accuracy across diverse scalar and tensorial quantum chemical properties. Ablation studies show an average performance improvement of 7.9% across 11 out of 12 properties in QM9, 27.9% in forces in MD17, and 11.3% in polarizabilities (CCSD) in QM7b.
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Submitted 19 June, 2024;
originally announced June 2024.
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Hofstadter spectrum in a semiconductor moiré lattice
Authors:
Chen Zhao,
Ming Wu,
Zhen Ma,
Miao Liang,
Ming Lu,
**-Hua Gao,
X. C. Xie
Abstract:
Recently, the Hofstadter spectrum of a twisted $\mathrm{WSe_2/MoSe_2}$ heterobilayer has been observed in experiment [C. R. Kometter, et al. Nat.Phys.19, 1861 (2023)], but the origin of Hofstadter states remains unclear. Here, we present a comprehensive theoretical interpretation of the observed Hofstadter states by calculating its accurate Hofstadter spectrum. We point out that the valley Zeeman…
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Recently, the Hofstadter spectrum of a twisted $\mathrm{WSe_2/MoSe_2}$ heterobilayer has been observed in experiment [C. R. Kometter, et al. Nat.Phys.19, 1861 (2023)], but the origin of Hofstadter states remains unclear. Here, we present a comprehensive theoretical interpretation of the observed Hofstadter states by calculating its accurate Hofstadter spectrum. We point out that the valley Zeeman effect, a unique feature of the transition metal dichalcogenide (TMD) materials, plays a crucial role in determining the shape of the Hofstadter spectrum, due to the narrow bandwidth of the moiré bands. This is distinct from the graphene-based moiré systems. We further predict that the Hofstadter spectrum of the moiré flat band, which was not observed in experiment, can be observed in the same system with a larger twist angle $2^\circ\lesssimθ\lesssim 3^\circ$. Our theory paves the way for further studies of the interplay between the Hofstadter states and correlated insulting states in such moiré lattice systems.
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Submitted 12 June, 2024;
originally announced June 2024.
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Half-integer Vortices Paired via String Micelles in Ferroelectric Liquid Crystals Facilitated by Ionic Polymer Do**
Authors:
Zhongjie Ma,
Miao Jiang,
Yaohao Song,
Aile Sun,
Shengzhu Yi,
Chao Zhou,
Xiang Huang,
Mingjun Huang,
Satoshi Aya,
Qi-Huo Wei
Abstract:
Ferroelectric nematic (NF) liquid crystals are an intriguing polar system for exploring topological defects, and their properties are subject to significant influence by ionic do**. A prior theory based on a modified XY model predicts that string defects with half-integer vortex-antivortex pairs can be excited, while such stable string defects have not been directly observed in polar materials.…
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Ferroelectric nematic (NF) liquid crystals are an intriguing polar system for exploring topological defects, and their properties are subject to significant influence by ionic do**. A prior theory based on a modified XY model predicts that string defects with half-integer vortex-antivortex pairs can be excited, while such stable string defects have not been directly observed in polar materials. Here, we report that do** the ferroelectric nematic material RM734 with cationic polymers can facilitate the formation of abundant string defects with butterfly textures. The string defects exhibit a polarization field restricted to 2D plane that is divided by Néel type domain walls into domains with either uniform polarization or negative splay deformation in the butterfly wing areas (positive bound charges). We establish a charge double layer model for the string defects: the strings of cationic polymer chains and close packing RM734 molecules form the Stern charge layer, and the small anionic ions and the positive bound charges (due to splay deformation) form the charge diffusion layer. We demonstrate that only cationic polymeric do** is effective due to the coupling between the flexoelectricity and the pear shape of the RM734 molecules. We estimate the line charge density of the strings via measuring the divergence of the polarization and the electrophoretic motion mobility, and obtain good qualitative agreement. We further show that the field-driven polarization reversal undergoes either string rotation or generating and merging with kink walls.
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Submitted 3 June, 2024;
originally announced June 2024.
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Effects of alloying elements on carbon diffusion in the austenite (f.c.c.) and ferrite (b.c.c.) phases
Authors:
Zugang Mao,
Amir R. Farkoosh,
David N. Seidman
Abstract:
TThe effects of alloying elements on diffusion pathways and migration energies of interstitial carbon in austenite (f.c.c.) and ferrite (b.c.c.) are studied using density functional theory first-principles calculations. The binding energies between carbon and alloying elements are determined through 6th nearest-neighbor (NN) distances. The elements studied are Ni, Mo, V, Cr, Mn, Cu, Al, Ti, and Si…
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TThe effects of alloying elements on diffusion pathways and migration energies of interstitial carbon in austenite (f.c.c.) and ferrite (b.c.c.) are studied using density functional theory first-principles calculations. The binding energies between carbon and alloying elements are determined through 6th nearest-neighbor (NN) distances. The elements studied are Ni, Mo, V, Cr, Mn, Cu, Al, Ti, and Si, relevant to most high-strength steels. Nickel, Mn, Al, and Si have repulsive binding energies; Mo, V, Cr, Cu, and Ti have attractive binding energies in austenite and ferrite. Alloying elements at 1st NN sites of a C atom in an octahedral site introduce asymmetry into the minimum energy diffusion pathway, causing up to about 1 eV changes in saddle-point energies. This pathway goes from one octahedral site to another via intermediate energy states, differing for austenite and ferrite. We find that the elements with attractive binding energies increase the energy barrier for C migration resulting in decelerated carbon diffusion, while the elements with repulsive binding energies decrease the energy barrier for C migration leading to accelerated C diffusion. The magnitude of changes in C migration energies is proportional to the binding energies between C and alloying elements. Among the three austenite stabilizers, Ni and Mn are C diffusion accelerators, while Cu decelerates C diffusion in austenite. Among the four ferrite stabilizers, Si is a C diffusion accelerator, while V and Ti serve as C diffusion decelerators in ferrite. Aluminum has no significant effect on C's diffusivity, while Mo and Cr decelerate C diffusion.
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Submitted 30 May, 2024; v1 submitted 28 May, 2024;
originally announced May 2024.
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Optical study of the charge dynamics evolution in the topological insulators MnBi$_2$Te$_4$ and Mn(Bi$_{0.74}$Sb$_{0.26}$)$_2$Te$_4$ under high pressure
Authors:
M. Köpf,
S. H. Lee,
Z. Q. Mao,
C. A. Kuntscher
Abstract:
The van der Waals material MnBi$_2$Te$_4$ and the related Sb-substituted compounds Mn(Bi$_{1-x}$Sb$_x$)$_2$Te$_4$ are prominent members of the family of magnetic topological insulators, in which rare quantum mechanical states can be realized. In this work, we study the evolution of the charge dynamics in MnBi$_2$Te$_4$ and the Sb-substituted compound Mn(Bi$_{1-x}$Sb$_x$)$_2$Te$_4$ with $x=0.26$ un…
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The van der Waals material MnBi$_2$Te$_4$ and the related Sb-substituted compounds Mn(Bi$_{1-x}$Sb$_x$)$_2$Te$_4$ are prominent members of the family of magnetic topological insulators, in which rare quantum mechanical states can be realized. In this work, we study the evolution of the charge dynamics in MnBi$_2$Te$_4$ and the Sb-substituted compound Mn(Bi$_{1-x}$Sb$_x$)$_2$Te$_4$ with $x=0.26$ under hydrostatic pressure. For MnBi$_2$Te$_4$, the pressure dependence of the screened plasma frequency, the dc conductivity, and the reflectance at selected frequencies shows weak anomalies at $\sim$2 and $\sim$4~GPa, which might be related to an electronic phase transition driven by the enhanced interlayer interaction. We observe a pressure-induced decrease in the optical gap, consistent with the decrease in and closing of the energy gap reported in the literature. Both studied materials show an unusual decrease in the low-energy optical conductivity under pressure, which we attribute to a decreasing spectral weight of the Drude terms describing the free charge carrier excitations. Our results suggest a localization of conduction electrons under pressure, possibly due to hybridization effects.
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Submitted 24 May, 2024;
originally announced May 2024.
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Imaging topological polar structures in marginally twisted 2D semiconductors
Authors:
Thi-Hai-Yen Vu,
Daniel Bennett,
Gayani Nadeera Pallewella,
Md Hemayet Uddin,
Kaijian Xing,
Weiyao Zhao,
Seng Huat Lee,
Zhiqiang Mao,
Jack B. Muir,
Linnan Jia,
Jeffrey A. Davis,
Kenji Watanabe,
Takashi Taniguchi,
Shaffique Adam,
Pankaj Sharma,
Michael S. Fuhrer,
Mark T. Edmonds
Abstract:
Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique properties not present in the individual layers themselves. Ferroelectricity for example, arises due to broken inversion symmetry in twisted and strained bilayers of 2D semiconductors with stacking domains of alternating out-o…
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Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique properties not present in the individual layers themselves. Ferroelectricity for example, arises due to broken inversion symmetry in twisted and strained bilayers of 2D semiconductors with stacking domains of alternating out-of-plane polarization. However, understanding the individual contributions of twist and strain to the formation of topological polar nanostructures remains to be established and has proven to be experimentally challenging. Inversion symmetry breaking has been predicted to give rise to an in-plane component of polarization along the domain walls, leading to the formation of a network of topologically non-trivial merons (half-skyrmions) that are Bloch-type for twisted and Neel-type for strained systems. Here we utilise angle-resolved, high-resolution vector piezoresponse force microscopy (PFM) to spatially resolve polarization components and topological polar nanostructures in marginally twisted bilayer WSe2, and provide experimental proof for the existence of topologically non-trivial meron/antimeron structures. We observe both Bloch-type and Neel-type merons, allowing us to differentiate between moire superlattices formed due to twist or heterogeneous strain. This first demonstration of non-trivial real-space topology in a twisted van der Waals heterostructure opens pathways for exploring the connection between twist and topology in engineered nano-devices.
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Submitted 23 May, 2024;
originally announced May 2024.
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1/3 and other magnetization plateaus in a quasi-one-dimensional Ising magnet $\mathbf{TbTi_3Bi_4}$ with zigzag spin chain
Authors:
Kaizhen Guo,
Zeyu Ma,
Hongxiong Liu,
Ziyang Wu,
Junfeng Wang,
Youguo Shi,
Yuan Li,
Shuang Jia
Abstract:
We report the magnetic properties of newly synthesized, single crystals of $\mathrm{TbTi_3Bi_4}$ whose crystal structure is highlighted by the stacking of terbium-based zigzag chains and titanium-based kagome lattices. This compound demonstrates extreme easy-axis magnetic anisotropy due to the crystalline-electric-field effect which aligns the $\mathrm{Tb^{3+}}$ moments along the zigzag chain dire…
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We report the magnetic properties of newly synthesized, single crystals of $\mathrm{TbTi_3Bi_4}$ whose crystal structure is highlighted by the stacking of terbium-based zigzag chains and titanium-based kagome lattices. This compound demonstrates extreme easy-axis magnetic anisotropy due to the crystalline-electric-field effect which aligns the $\mathrm{Tb^{3+}}$ moments along the zigzag chain direction. As the result of the strong single-ion anisotropy and multiple magnetic interactions, $\mathrm{TbTi_3Bi_4}$ behaves as a quasi-one-dimensional Ising magnet with a remarkable antiferromagnetic ordering at $T_\mathrm{N}$ = 20.4 K. When a magnetic field is applied along the direction of the zigzag chain, multiple meta-magnetic transitions occur between 1/3 and other magnetization plateaus. We have created a field-temperature phase diagram and mapped out the complex magnetic structures resulting from frustration.
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Submitted 15 May, 2024;
originally announced May 2024.
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Dielectric Tensor Prediction for Inorganic Materials Using Latent Information from Preferred Potential
Authors:
Zetian Mao,
Wenwen Li,
Jethro Tan
Abstract:
Dielectrics are materials with widespread applications in flash memory, central processing units, photovoltaics, capacitors, etc. However, the availability of public dielectric data remains limited, hindering research and development efforts. Previously, machine learning models focused on predicting dielectric constants as scalars, overlooking the importance of dielectric tensors in understanding…
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Dielectrics are materials with widespread applications in flash memory, central processing units, photovoltaics, capacitors, etc. However, the availability of public dielectric data remains limited, hindering research and development efforts. Previously, machine learning models focused on predicting dielectric constants as scalars, overlooking the importance of dielectric tensors in understanding material properties under directional electric fields for material design and simulation. This study demonstrates the value of common equivariant structural embedding features derived from a universal neural network potential in enhancing the prediction of dielectric properties. To integrate channel information from various-rank latent features while preserving the desired SE(3) equivariance to the second-rank dielectric tensors, we design an equivariant readout decoder to predict the total, electronic, and ionic dielectric tensors individually, and compare our model with the state-of-the-art models. Finally, we evaluate our model by conducting virtual screening on thermodynamical stable structure candidates in Materials Project. The material Ba\textsubscript{2}SmTaO\textsubscript{6} with large band gaps ($E_g=3.36 \mathrm{eV}$) and dielectric constants ($ε=93.81$) is successfully identified out of the 14k candidate set. The results show that our methods give good accuracy on predicting dielectric tensors of inorganic materials, emphasizing their potential in contributing to the discovery of novel dielectrics.
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Submitted 14 May, 2024;
originally announced May 2024.
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A method for quantifying the generalization capabilities of generative models for solving Ising models
Authors:
Qunlong Ma,
Zhi Ma,
Ming Gao
Abstract:
For Ising models with complex energy landscapes, whether the ground state can be found by neural networks depends heavily on the Hamming distance between the training datasets and the ground state. Despite the fact that various recently proposed generative models have shown good performance in solving Ising models, there is no adequate discussion on how to quantify their generalization capabilitie…
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For Ising models with complex energy landscapes, whether the ground state can be found by neural networks depends heavily on the Hamming distance between the training datasets and the ground state. Despite the fact that various recently proposed generative models have shown good performance in solving Ising models, there is no adequate discussion on how to quantify their generalization capabilities. Here we design a Hamming distance regularizer in the framework of a class of generative models, variational autoregressive networks (VAN), to quantify the generalization capabilities of various network architectures combined with VAN. The regularizer can control the size of the overlaps between the ground state and the training datasets generated by networks, which, together with the success rates of finding the ground state, form a quantitative metric to quantify their generalization capabilities. We conduct numerical experiments on several prototypical network architectures combined with VAN, including feed-forward neural networks, recurrent neural networks, and graph neural networks, to quantify their generalization capabilities when solving Ising models. Moreover, considering the fact that the quantification of the generalization capabilities of networks on small-scale problems can be used to predict their relative performance on large-scale problems, our method is of great significance for assisting in the Neural Architecture Search field of searching for the optimal network architectures when solving large-scale Ising models.
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Submitted 6 May, 2024;
originally announced May 2024.
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Possible gapless quantum spin liquid behavior in the triangular-lattice Ising antiferromagnet PrMgAl$_{11}$O$_{19}$
Authors:
Zhen Ma,
Shuhan Zheng,
Yingqi Chen,
Ruokai Xu,
Zhao-Yang Dong,
**ghui Wang,
Hong Du,
Jan Peter Embs,
Shuaiwei Li,
Yao Li,
Yongjun Zhang,
Meifeng Liu,
Ruidan Zhong,
Jun-Ming Liu,
**sheng Wen
Abstract:
Quantum spin liquids (QSLs) represent a novel state where spins are highly entangled but do not order even at zero temperature due to strong quantum fluctuations. Such a state is mostly studied in Heisenberg models defined on geometrically frustrated lattices. Here, we turn to a new triangular-lattice antiferromagnet PrMgAl$_{11}$O$_{19}$, in which the interactions are believed to be of Ising type…
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Quantum spin liquids (QSLs) represent a novel state where spins are highly entangled but do not order even at zero temperature due to strong quantum fluctuations. Such a state is mostly studied in Heisenberg models defined on geometrically frustrated lattices. Here, we turn to a new triangular-lattice antiferromagnet PrMgAl$_{11}$O$_{19}$, in which the interactions are believed to be of Ising type. Magnetic susceptibility measured with an external field along the $c$ axis is two orders of magnitude larger than that with a field in the $ab$ plane, displaying an ideal easy-axis behavior. Meanwhile, there is no magnetic phase transition or spin freezing observed down to 1.8 K. Ultralow-temperature specific heat measured down to 50 mK does not capture any phase transition either, but a hump at 4.5 K, below which the magnetic specific heat exhibits a quasi-quadratic temperature dependence that is consistent with a Dirac QSL state. Inelastic neutron scattering technique is also employed to elucidate the nature of its ground state. In the magnetic excitation spectra, there is a gapless broad continuum at the base temperature 55~mK, in favor of the realization of a gapless QSL. Our results provide a scarce example for the QSL behaviors observed in an Ising-type magnet, which can serve as a promising platform for future research on QSL physics based on an Ising model.
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Submitted 24 April, 2024;
originally announced April 2024.
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Operando Analysis of Adsorption-Limited Hydrogen Oxidation Reaction at Palladium Surfaces
Authors:
Yukun Liu,
Kunmo Koo,
Zugang Mao,
Xianbiao Fu,
Xiaobing Hu,
Vinayak P. Dravid
Abstract:
Palladium (Pd) catalysts have been extensively studied for the direct synthesis of H2O through the hydrogen oxidation reaction at ambient conditions. This heterogeneous catalytic reaction not only holds considerable practical significance but also serves as a classical model for investigating fundamental mechanisms, including adsorption and reactions between adsorbates. Nonetheless, the governing…
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Palladium (Pd) catalysts have been extensively studied for the direct synthesis of H2O through the hydrogen oxidation reaction at ambient conditions. This heterogeneous catalytic reaction not only holds considerable practical significance but also serves as a classical model for investigating fundamental mechanisms, including adsorption and reactions between adsorbates. Nonetheless, the governing mechanisms and kinetics of its intermediate reaction stages under varying gas conditions remains elusive. This is attributed to the intricate interplay between adsorption, atomic diffusion, and concurrent phase transformation of catalyst. Herein, the Pd-catalyzed, water-forming hydrogen oxidation is studied, in situ, to investigate intermediate reaction stages via fluid cell transmission electron microscopy. The dynamic behaviors of water generation, associated with reversible palladium hydride formation, are captured in real time with a nanoscale spatial resolution. Our findings suggest that the hydrogen oxidation rate catalyzed by Pd is significantly affected by the sequence in which gases are introduced. Through direct evidence of electron diffraction and density functional theory calculation, we demonstrate that the hydrogen oxidation rate is limited by adsorption processes of gas precursors. These nanoscale insights help identify the optimal reaction conditions for Pd-catalyzed hydrogen oxidation, which has substantial implications for water production technologies. The developed understanding also advocates a broader exploration of analogous mechanisms in other metal-catalyzed reactions.
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Submitted 22 April, 2024;
originally announced April 2024.
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Message Passing Variational Autoregressive Network for Solving Intractable Ising Models
Authors:
Qunlong Ma,
Zhi Ma,
**long Xu,
Hairui Zhang,
Ming Gao
Abstract:
Many deep neural networks have been used to solve Ising models, including autoregressive neural networks, convolutional neural networks, recurrent neural networks, and graph neural networks. Learning a probability distribution of energy configuration or finding the ground states of a disordered, fully connected Ising model is essential for statistical mechanics and NP-hard problems. Despite tremen…
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Many deep neural networks have been used to solve Ising models, including autoregressive neural networks, convolutional neural networks, recurrent neural networks, and graph neural networks. Learning a probability distribution of energy configuration or finding the ground states of a disordered, fully connected Ising model is essential for statistical mechanics and NP-hard problems. Despite tremendous efforts, a neural network architecture with the ability to high-accurately solve these fully connected and extremely intractable problems on larger systems is still lacking. Here we propose a variational autoregressive architecture with a message passing mechanism, which can effectively utilize the interactions between spin variables. The new network trained under an annealing framework outperforms existing methods in solving several prototypical Ising spin Hamiltonians, especially for larger spin systems at low temperatures. The advantages also come from the great mitigation of mode collapse during the training process of deep neural networks. Considering these extremely difficult problems to be solved, our method extends the current computational limits of unsupervised neural networks to solve combinatorial optimization problems.
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Submitted 9 April, 2024;
originally announced April 2024.
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Nanoscale Imaging of Phonons and Reconfiguration in Topologically-Engineered, Self-Assembled Nanoparticle Lattice
Authors:
Chang Qian,
Ethan Stanifer,
Zhan Ma,
Binbin Luo,
Chang Liu,
Lehan Yao,
Wenxiao Pan,
Xiaoming Mao,
Qian Chen
Abstract:
Topologically-engineered mechanical frames are important model constructs for architecture, machine mechanisms, and metamaterials. Despite significant advances in macroscopically fashioned frames, realization and phonon imaging of nanoframes have remained challenging. Here we extend for the first time the principles of topologically-engineered mechanical frames to lattices self-assembled from nano…
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Topologically-engineered mechanical frames are important model constructs for architecture, machine mechanisms, and metamaterials. Despite significant advances in macroscopically fashioned frames, realization and phonon imaging of nanoframes have remained challenging. Here we extend for the first time the principles of topologically-engineered mechanical frames to lattices self-assembled from nanoparticles. Liquid-phase transmission electron microscopy images the vibrations of nanoparticles in self-assembled Maxwell and hexagonal lattices at the nanometer resolution, measuring a series of otherwise inaccessible properties such as phonon spectra and nonlinear lattice deformation paths. These properties are experimentally modulated by ionic strength, captured by our discrete mechanical model considering the complexity of nanoscale interactions and thermal fluctuations. The experiment-theory integration bridges mechanical metamaterials and colloidal self-assembly, opening new opportunities to manufacture phononic devices with solution processibility, transformability, light weight, and emergent functions, at underexplored length, frequency, and energy scales.
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Submitted 22 March, 2024;
originally announced March 2024.
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Magneto-Ionic Vortices: Voltage-Reconfigurable Swirling-Spin Analog-Memory Nanomagnets
Authors:
Irena Spasojevic,
Zheng Ma,
Aleix Barrera,
Federica Celegato,
Ana Palau,
Paola Tiberto,
Kristen S. Buchanan,
Jordi Sort
Abstract:
Rapid progress in information technologies has spurred the need for innovative memory concepts, for which advanced data-processing methods and tailor-made materials are required. Here we introduce a previously unexplored nanoscale magnetic object: an analog magnetic vortex controlled by electric-field-induced ion motion, termed magneto-ionic vortex or "vortion". This state arises from paramagnetic…
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Rapid progress in information technologies has spurred the need for innovative memory concepts, for which advanced data-processing methods and tailor-made materials are required. Here we introduce a previously unexplored nanoscale magnetic object: an analog magnetic vortex controlled by electric-field-induced ion motion, termed magneto-ionic vortex or "vortion". This state arises from paramagnetic FeCoN through voltage gating and gradual N3-ion extraction within patterned nanodots. Unlike traditional vortex states, vortions offer comprehensive analog adjustment of key properties such as magnetization amplitude, nucleation/annihilation fields, or coercivity using voltage as an energy-efficient tuning knob. This manipulation occurs post-synthesis, obviating the need for energy-demanding methods like laser pulses or spin-torque currents. By leveraging an overlooked aspect of N3-magneto-ionics -- planar ion migration within nanodots -- precise control of the magnetic layer's thickness is achieved, which enables reversible transitions among paramagnetic, single-domain, and vortion states, offering future prospects for analog computing, multi-state data storage, or brain-inspired devices.
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Submitted 20 March, 2024;
originally announced March 2024.
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Structure and lattice excitations of the copper substituted lead oxyapatite Pb$_{9.06(7)}$Cu$_{0.94(6)}$(PO$_{3.92(4)}$)$_{6}$O$_{0.96(3)}$
Authors:
Qiang Zhang,
Yingdong Guan,
Yongqiang Cheng,
Lu** Min,
Jong K. Keum,
Zhiqiang Mao,
Matthew B. Stone
Abstract:
The copper substituted lead oxyapatite, Pb$_{10-x}$Cu$_{x}$(PO$_{3.92(4)}$)$_{6}$O$_{0.96(3)}$ (x=0.94(6)) was studied using neutron and x-ray diffraction and neutron spectroscopy techniques. The crystal structure of the main phase of our sample, which has come to be colloquially known as LK-99, is verified to possess a hexagonal structure with space group $P 6_{3}/m$, alongside the presence of im…
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The copper substituted lead oxyapatite, Pb$_{10-x}$Cu$_{x}$(PO$_{3.92(4)}$)$_{6}$O$_{0.96(3)}$ (x=0.94(6)) was studied using neutron and x-ray diffraction and neutron spectroscopy techniques. The crystal structure of the main phase of our sample, which has come to be colloquially known as LK-99, is verified to possess a hexagonal structure with space group $P 6_{3}/m$, alongside the presence of impurity phases Cu and Cu$_2$S. We determine the primary substitution location of the Cu as the Pb1 ($6h$) site, with a small substitution at the Pb2 ($4f$) site. Consequently, no clear Cu-do**-induced structural distortion was observed in the investigated temperature region between 10~K and 300~K. Specially, we did not observe a reduction of coordinate number at the Pb2 site or a clear tilting of PO$_4$ tetrahedron. Magnetic characterization reveals a diamagnetic signal in the specimen, accompanied by a very weak ferromagnetic component at 2 K. No long-range magnetic order down to 10 K was detected by the neutron diffraction. Inelastic neutron scattering measurements did not show magnetic excitations for energies up to 350 meV. There is no sign of a superconducting resonance in the excitation spectrum of this material. The measured phonon density of states compares well with density functional theory calculations performed for the main LK-99 phase and its impurity phases. Our study may shed some insight into the role of the favored substitution site of copper in the absence of structural distortion and superconductivity in LK-99.
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Submitted 16 January, 2024;
originally announced January 2024.
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Thermodynamics of Ionic Thermoelectrics for Low-Grade Heat Harvesting
Authors:
Xin Qian,
Zhihao Ma,
Qiangqiang Huang,
Haoran Jiang,
Ronggui Yang
Abstract:
More than half of the waste heat rejected into the environment has temperatures lower than 100 $^\circ C$, which accounts for nearly 85 PWh/year worldwide. Efficiently harvesting low-grade heat could be a promising step toward carbon neutrality. Recent developments of ionic thermoelectrics (i-TE) with giant thermopower have provoked intensive interest in using ions as energy and charge carriers fo…
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More than half of the waste heat rejected into the environment has temperatures lower than 100 $^\circ C$, which accounts for nearly 85 PWh/year worldwide. Efficiently harvesting low-grade heat could be a promising step toward carbon neutrality. Recent developments of ionic thermoelectrics (i-TE) with giant thermopower have provoked intensive interest in using ions as energy and charge carriers for efficient thermal energy harvesting. However, current literature primarily focuses on improving thermopower only, while the ion transport and thermodynamics affecting the efficiencies have been largely neglected. This review article clarifies the fundamentals of electrochemistry and thermodynamics for develo** highly efficient i-TE devices. Two major types of i-TE devices, thermo-ionic capacitors (TIC) and thermogalvanic cells (TGC), are discussed in detail. The article analyzes the methods of enhancing ionic thermopower in the literature by taking an entropic point of view. We also derived modified thermoelectric factor Z for both TICs and TGCs that fully incorporate the dynamics of ion transport and electrochemical reactions. Recent developments of hybrid devices showing improved efficiencies, power density, and multifunctionality are reviewed. Finally, we comment on the remaining challenges and provide an outlook on future directions.
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Submitted 9 January, 2024;
originally announced January 2024.
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Flexomagnetoelectric effect in Sr2IrO4 thin films
Authors:
Xin Liu,
Ting Hu,
Yujun Zhang,
Xueli Xu,
Biao Wu,
Zongwei Ma,
Peng Lv,
Yuelin Zhang,
Shih-Wen Huang,
Jialu Wu,
**g Ma,
Jiawang Hong,
Zhigao Sheng,
Chenglong Jia,
Erjun Kan,
Ce-Wen Nan,
**xing Zhang
Abstract:
Symmetry engineering is explicitly effective to manipulate and even create phases and orderings in strongly correlated materials. Flexural stress is universally practical to break the space-inversion or time-reversal symmetry. Here, by introducing strain gradient in a centrosymmetric antiferromagnet Sr2IrO4, the space-inversion symmetry is broken accompanying a non-equivalent O p-Ir d orbital hybr…
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Symmetry engineering is explicitly effective to manipulate and even create phases and orderings in strongly correlated materials. Flexural stress is universally practical to break the space-inversion or time-reversal symmetry. Here, by introducing strain gradient in a centrosymmetric antiferromagnet Sr2IrO4, the space-inversion symmetry is broken accompanying a non-equivalent O p-Ir d orbital hybridization along z axis. Thus, emergent polar phase and out-of-plane magnetic moment have been simultaneously observed in these asymmetric Sr2IrO4 thin films, which both are absent in its ground state. Furthermore, upon the application of magnetic field, such polarization can be controlled by modifying the occupied d orbitals through spin-orbit interaction, giving rise to a flexomagnetoelectric effect. This work provides a general strategy to artificially design multiple symmetries and ferroic orderings in strongly correlated systems.
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Submitted 9 January, 2024;
originally announced January 2024.
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Observation of a 1/3 Magnetisation Plateau Phase as Evidence for the Kitaev Interaction in a Honeycomb-Lattice Antiferromagnet
Authors:
Yanyan Shangguan,
Song Bao,
Zhao-Yang Dong,
Ning Xi,
Yi-Peng Gao,
Zhen Ma,
Wei Wang,
Zhongyuan Qi,
Shuai Zhang,
Zhentao Huang,
Junbo Liao,
Xiaoxue Zhao,
Bo Zhang,
Shufan Cheng,
Hao Xu,
Dehong Yu,
Richard A. Mole,
Naoki Murai,
Seiko Ohira-Kawamura,
Lunhua He,
Jiazheng Hao,
Qing-Bo Yan,
Fengqi Song,
Wei Li,
Shun-Li Yu
, et al. (2 additional authors not shown)
Abstract:
Fractional magnetisation plateaus, in which the magnetisation is pinned at a fraction of its saturated value within a range of external magnetic field, are spectacular macroscopic manifestations of the collective quantum behaviours. One prominent example of the plateau phase is found in spin-1/2 triangular-lattice antiferromagnets featuring strong geometrical frustration, and is often interpreted…
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Fractional magnetisation plateaus, in which the magnetisation is pinned at a fraction of its saturated value within a range of external magnetic field, are spectacular macroscopic manifestations of the collective quantum behaviours. One prominent example of the plateau phase is found in spin-1/2 triangular-lattice antiferromagnets featuring strong geometrical frustration, and is often interpreted as quantum-fluctuation-stabilised state in magnetic field via the "order-by-disorder" mechanism. Here, we observe an unprecedented 1/3 magnetisation plateau between 5.2 and 7.4 T at 2 K in a spin-1 antiferromagnet Na$_3$Ni$_2$BiO$_6$ with a honeycomb lattice, where conventionally no geometrical frustration is anticipated. By carrying out elastic neutron scattering measurements, we propose the spin structure of the plateau phase to be an unusual partial spin-flop ferrimagnetic order, transitioning from the zigzag antiferromagnetic order in zero field. Our theoretical calculations show that the plateau phase is stabilised by the bond-anisotropic Kitaev interaction. These results provide a new paradigm for the exploration of rich quantum phases in frustrated magnets and exotic Kitaev physics in high-spin systems.
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Submitted 26 December, 2023;
originally announced December 2023.
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Band alignment of grafted monocrystalline Si (001)/$β$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy
Authors:
Jiarui Gong,
Jie Zhou,
Ashok Dheenan,
Moheb Sheikhi,
Fikadu Alema,
Tien Khee Ng,
Shubhra S. Pasayat,
Qiaoqiang Gan,
Andrei Osinsky,
Vincent Gambin,
Chirag Gupta,
Siddharth Rajan,
Boon S. Ooi,
Zhenqiang Ma
Abstract:
Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and vi…
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Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and viable approach towards lattice-mismatched $β$-Ga$_2$O$_3$-based p-n heterojunctions with high quality interfaces. Understanding and quantitatively characterizing the band alignment of the grafted heterojunctions is crucial for future bipolar device development employing the grafting method. In this work, we present a systematic study of the band alignment in the grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructure by employing X-ray photoelectron spectroscopy (XPS). The core level peaks and valence band spectra of the Si, $β$-Ga$_2$O$_3$, and the grafted heterojunction were carefully obtained and analyzed. The band diagrams of the Si/$β$-Ga$_2$O$_3$ heterostructure were constructed using two individual methods, the core level peak method and the valence band spectrum method, by utilizing the different portions of the measured data. The reconstructed band alignments of the Si/$β$-Ga$_2$O$_3$ heterostructure using the two different methods are identical within the error range. The band alignment is also consistent with the prediction from the electron affinity values of Si and $β$-Ga$_2$O$_3$. The study suggests that the interface defect density in grafted Si/$β$-Ga$_2$O$_3$ heterostructure is at a sufficiently low level such that Fermi level pinning at the interface has been completely avoided and the universal electron affinity rule can be safely employed to construct the band diagrams of grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructures.
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Submitted 1 December, 2023;
originally announced December 2023.
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Elimination of the confrontation between theory and experiment in flexoelectric Bi2GeO5
Authors:
Yuying Cao,
Xulong Zhang,
Long Zhou,
Hongfei Liu,
Hua Gao,
Fu Zheng,
Zhi Ma
Abstract:
In this paper, we have investigated the flexoelectric effect of Bi2GeO5(BGO), successfully predicted the maximum flexoelectric coefficient of BGO, and tried to explore the difference between experimental and simulated flexoelectric coefficients.
In this paper, we have investigated the flexoelectric effect of Bi2GeO5(BGO), successfully predicted the maximum flexoelectric coefficient of BGO, and tried to explore the difference between experimental and simulated flexoelectric coefficients.
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Submitted 28 November, 2023; v1 submitted 17 November, 2023;
originally announced November 2023.
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Semi-Dirac Fermions in a Topological Metal
Authors:
Yinming Shao,
Seongphill Moon,
A. N. Rudenko,
Jie Wang,
Mykhaylo Ozerov,
David Graf,
Zhiyuan Sun,
Raquel Queiroz,
Seng Huat Lee,
Yanglin Zhu,
Zhiqiang Mao,
M. I. Katsnelson,
Dmitry Smirnov,
Andrew. J. Millis,
D. N. Basov
Abstract:
Topological semimetals with massless Dirac and Weyl fermions represent the forefront of quantum materials research. In two dimensions, a peculiar class of fermions that are massless in one direction and massive in the perpendicular direction was predicted fifteen years ago. These highly exotic quasiparticles - the semi-Dirac fermions - ignited intense theoretical interest but remain undetected. Us…
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Topological semimetals with massless Dirac and Weyl fermions represent the forefront of quantum materials research. In two dimensions, a peculiar class of fermions that are massless in one direction and massive in the perpendicular direction was predicted fifteen years ago. These highly exotic quasiparticles - the semi-Dirac fermions - ignited intense theoretical interest but remain undetected. Using magneto-optical spectroscopy, we demonstrate the defining feature of semi-Dirac fermions - B^(2/3) scaling of Landau levels - in a prototypical nodal-line metal ZrSiS. In topological metals, including ZrSiS, nodal-lines extend the band degeneracies from isolated points to lines, loops or even chains in the momentum space. With ab initio calculations and theoretical modeling, we pinpoint the observed semi-Dirac spectrum to the crossing points of nodal-lines in ZrSiS. Crossing nodal-lines exhibit a continuum absorption spectrum but with singularities that scale as B^(2/3) at the crossing. Our work sheds light on the hidden quasiparticles emerging from the intricate topology of crossing nodal-lines.
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Submitted 7 November, 2023;
originally announced November 2023.
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Separating micrometer-sized particles utilizing a dusty plasma ratchet
Authors:
Zhi-min Cai,
Zong-bo Ma,
You-kai Zhao,
Fu-cheng Liu,
Ya-feng He
Abstract:
Directional transport-dominated particle separation presents major challenges in many technological applications. The Feynman ratchet can convert the random perturbation into directional transport of particles, offering innovative separation schemes. Here, we propose the design of a dusty plasma ratchet system to accomplish the separation of micron-sized particles. The dust particles are charged a…
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Directional transport-dominated particle separation presents major challenges in many technological applications. The Feynman ratchet can convert the random perturbation into directional transport of particles, offering innovative separation schemes. Here, we propose the design of a dusty plasma ratchet system to accomplish the separation of micron-sized particles. The dust particles are charged and suspended at specific heights within the saw channel, depending on their sizes. Bi-dispersed dust particles can flow along the saw channel in opposite directions, resulting in a perfect purity of particle separation. We discuss the underlying mechanism of particle separation, wherein dust particles of different sizes are suspended at distinctive heights and experience electric ratchet potentials with opposite orientations, leading to their contrary flows. Our results demonstrate a feasible and highly efficient method for separating micron-sized particles.
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Submitted 4 November, 2023;
originally announced November 2023.
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Demonstration of a monocrystalline GaAs-$β$-Ga$_2$O$_3$ p-n heterojunction
Authors:
Jie Zhou,
Moheb Sheikhi,
Ashok Dheenan,
Haris Abbasi,
Jiarui Gong,
Yang Liu,
Carolina Adamo,
Patrick Marshall,
Nathan Wriedt,
Clincy Cheung,
Shuoyang Qiu,
Tien Khee Ng,
Qiaoqiang Gan,
Vincent Gambin,
Boon S. Ooi,
Siddharth Rajan,
Zhenqiang Ma
Abstract:
In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$β$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$β$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarka…
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In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$β$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$β$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarkable performance metrics, including an ideality factor of 1.23, a high rectification ratio of 8.04E9 at +/- 4V, and a turn on voltage of 2.35 V. Furthermore, at +5 V, the diode displays a large current density of 2500 A/cm$^2$ along with a low ON resistance of 2 m$Ω\cdot$cm$^2$.
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Submitted 5 October, 2023;
originally announced October 2023.
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Magnetic properties of the quasi-one-dimensional S = 1 spin chain antiferromagnet BaNiTe2O7
Authors:
Xiyu Chen,
Yiming Gao,
Meifeng Liu,
Tao Zou,
V. Ovidiu Garlea,
Clarina dela Cruz,
Zhen Liu,
Wen**g Niu,
Leili Tan,
Guanzhong Zhou,
Fei Liu,
Shuhan Zheng,
Zhen Ma,
Xiuzhang Wang,
Hong Li,
Shuai Dong,
Jun-Ming Liu
Abstract:
We report a quasi-one-dimensional S = 1 spin chain compound BaNiTe2O7. This magnetic system has been investigated by magnetic susceptibility, specific heat, and neutron powder diffraction. These results indicate that BaNiTe2O7 develops a short-range magnetic correlation around T ~ 22 K. With further cooling, an antiferromagnetic phase transition is observed at TN ~ 5.4 K. Neutron powder diffractio…
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We report a quasi-one-dimensional S = 1 spin chain compound BaNiTe2O7. This magnetic system has been investigated by magnetic susceptibility, specific heat, and neutron powder diffraction. These results indicate that BaNiTe2O7 develops a short-range magnetic correlation around T ~ 22 K. With further cooling, an antiferromagnetic phase transition is observed at TN ~ 5.4 K. Neutron powder diffraction revealed antiferromagnetic noncollinear order with a commensurate propagation vector k = (1/2, 1, 0). The refined magnetic moment size of Ni2+ at 1.5 K is 1.84μB, and its noncollinear spin texture is confirmed by first-principles calculations. Inelastic neutron-scattering results and density functional theory calculations confirmed the quasi-one-dimensional nature of the spin systems.
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Submitted 1 October, 2023;
originally announced October 2023.
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Ferroelectric Schottky diodes of CuInP$_2$S$_6$ nanosheet
Authors:
**yuan Yao,
Yongtao Liu,
Shaoqing Ding,
Yanglin Zhu,
Zhiqiang Mao,
Sergei V. Kalinin,
Ying Liu
Abstract:
Ferroelectricity in van der Waals (vdW) layered material has attracted a great deal of interest recently. CuInP$_2$S$_6$ (CIPS), the only vdW layered material whose ferroelectricity in the bulk was demonstrated by direct polarization measurements, was shown to remain ferroelectric down to a thickness of a few nanometers. However, its ferroelectric properties have just started to be explored in the…
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Ferroelectricity in van der Waals (vdW) layered material has attracted a great deal of interest recently. CuInP$_2$S$_6$ (CIPS), the only vdW layered material whose ferroelectricity in the bulk was demonstrated by direct polarization measurements, was shown to remain ferroelectric down to a thickness of a few nanometers. However, its ferroelectric properties have just started to be explored in the context of potential device applications. We report here the preparation and measurements of metal-ferroelectric semiconductor-metal heterostructures using nanosheets of CIPS obtained by mechanical exfoliation. Four bias voltage and polarization dependent resistive states were observed in the current-voltage characteristics, which we attribute to the formation of ferroelectric Schottky diode, along with switching behavior.
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Submitted 18 September, 2023;
originally announced September 2023.
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Hidden non-collinear spin-order induced topological surface states
Authors:
Zengle Huang,
Hemian Yi,
Daniel Kaplan,
Lu** Min,
Hengxin Tan,
Ying-ting Chan,
Zhiqiang Mao,
Binghai Yan,
Cui-Zu Chang,
Weida Wu
Abstract:
Rare-earth monopnictides are a family of materials simultaneously displaying complex magnetism, strong electronic correlation, and topological band structure. The recently discovered emergent arc-like surface states in these materials have been attributed to the multi-wave-vector antiferromagnetic order, yet the direct experimental evidence has been elusive. Here we report the observation of non-c…
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Rare-earth monopnictides are a family of materials simultaneously displaying complex magnetism, strong electronic correlation, and topological band structure. The recently discovered emergent arc-like surface states in these materials have been attributed to the multi-wave-vector antiferromagnetic order, yet the direct experimental evidence has been elusive. Here we report the observation of non-collinear antiferromagnetic order with multiple modulations using spin-polarized scanning tunneling microscopy. Moreover, we discover a hidden spin-rotation transition of single-to-multiple modulations 2 K below the Neel temperature. The hidden transition coincides with the onset of the surface states splitting observed by our angle-resolved photoemission spectroscopy measurements. Single modulation gives rise to a band inversion with induced topological surface states in a local momentum region while the full Brillouin zone carries trivial topological indices, and multiple modulation further splits the surface bands via non-collinear spin tilting, as revealed by our calculations. The direct evidence of the non-collinear spin order in NdSb not only clarifies the mechanism of the emergent topological surface states, but also opens up a new paradigm of control and manipulation of band topology with magnetism.
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Submitted 12 September, 2023;
originally announced September 2023.
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Energy Spectrum Theory of Incommensurate Systems
Authors:
Zhe He,
Xin-Yu Guo,
Zhen Ma,
**-hua Gao
Abstract:
Due to the lack of the translational symmetry, calculating the energy spectrum of an incommensurate system has always been a theoretical challenge. Here, we propose a natural approach to generalize the energy band theory to the incommensurate systems without reliance on the commensurate approximation, thus providing a comprehensive energy spectrum theory of the incommensurate systems. Except for a…
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Due to the lack of the translational symmetry, calculating the energy spectrum of an incommensurate system has always been a theoretical challenge. Here, we propose a natural approach to generalize the energy band theory to the incommensurate systems without reliance on the commensurate approximation, thus providing a comprehensive energy spectrum theory of the incommensurate systems. Except for a truncation dependent weighting factor, the formulae of this theory are formally almost identical to that of the Bloch electrons, making it particularly suitable for complex incommensurate structures. To illustrate the application of this theory, we give three typical examples: one-dimensional bichromatic and trichromatic incommensurate potential model, as well as a moiré quasicrystal. Our theory establishes a fundamental framework for understanding the incommensurate systems.
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Submitted 4 September, 2023;
originally announced September 2023.
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Crystallographic Disorder and Strong Magnetic Anisotropy in Dy3.1Pt2.0Sb3.8
Authors:
Terry Paske,
Yingdong Guan,
Chaoguo Wang,
Curtis Moore,
Zhiqiang Mao,
Xin Gui
Abstract:
We report the crystal growth and characterization of a rare-earth-containing material, Dy3.00(1)Pt2Sb4.48(2). This compound possesses a similar structure to the previously reported Y3Pt4Ge6, but lacks two layers of Pt atoms. Crystallographic disorder was found in Dy3.00(1)Pt2Sb4.48(2). Additionally, the Dy-Dy framework was found to have both square net and triangular lattices. Dy3.00(1)Pt2Sb4.48(2…
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We report the crystal growth and characterization of a rare-earth-containing material, Dy3.00(1)Pt2Sb4.48(2). This compound possesses a similar structure to the previously reported Y3Pt4Ge6, but lacks two layers of Pt atoms. Crystallographic disorder was found in Dy3.00(1)Pt2Sb4.48(2). Additionally, the Dy-Dy framework was found to have both square net and triangular lattices. Dy3.00(1)Pt2Sb4.48(2)8 was determined to be antiferromagnetically ordered around ~15 K while a competing antiferromagnetic sublattice also exists at lower temperature. Strong magnetic anisotropy was observed and several metamagnetic transitions were seen in the hysteresis loops. Furthermore, the Curie-Weiss fitting revealed unusually small effective moment of Dy, which is far below the expected value of Dy3+ (10.65 muB). This material might provide a new platform to study the relation between crystallographic disorder and magnetism.
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Submitted 14 February, 2024; v1 submitted 3 September, 2023;
originally announced September 2023.
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Coupling Between Magnetic and Transport Properties in Magnetic Layered Material Mn2-xZnxSb
Authors:
Md Rafique Un Nabi,
Rabindra Basnet,
Krishna Pandey,
Santosh Karki Chhetri,
Dinesh Upreti,
Gokul Acharya,
Fei Wang,
Arash Fereidouni,
Hugh O. H. Churchill,
Yingdong Guan,
Zhiqiang Mao,
** Hu
Abstract:
We synthesized single crystals for Mn2-xZnxSb and studied their magnetic and electronic transport properties. This material system displays rich magnetic phase tunable with temperature and Zn composition. In addition, two groups of distinct magnetic and electronic properties, separated by a critical Zn composition of x = 0.6, are discovered. The Zn-less samples are metallic and characterized by a…
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We synthesized single crystals for Mn2-xZnxSb and studied their magnetic and electronic transport properties. This material system displays rich magnetic phase tunable with temperature and Zn composition. In addition, two groups of distinct magnetic and electronic properties, separated by a critical Zn composition of x = 0.6, are discovered. The Zn-less samples are metallic and characterized by a resistivity jump at the magnetic ordering temperature, while the Zn-rich samples lose metallicity and show a metal-to-insulator transition-like feature tunable by magnetic field. Our findings establish Mn2-xZnxSb as a promising material platform that offers opportunities to study how the coupling of spin, charge, and lattice degrees of freedom governs interesting transport properties in 2D magnets, which is currently a topic of broad interest.
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Submitted 21 August, 2023;
originally announced August 2023.
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Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions
Authors:
Jie Zhou,
Ashok Dheenan,
Jiarui Gong,
Carolina Adamo,
Patrick Marshall,
Moheb Sheikhi,
Tsung-Han Tsai,
Nathan Wriedt,
Clincy Cheung,
Shuoyang Qiu,
Tien Khee Ng,
Qiaoqiang Gan,
Gambin Vincent,
Boon S. Ooi,
Siddharth Rajan,
Zhenqiang Ma
Abstract:
Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer pr…
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Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer printing an n-AlGaAs_p-GaAsP nanomembrane to the n-beta phase-Ga$_2$O$_3$ epitaxial substrate, we simultaneously achieved AlGaAs_GaAsP epitaxial n-p junction diode with an ideality factor of 1.29 and a rectification ratio of 2.57E3 at +/- 2 V, and grafted GaAsP_beta_phase_gallium oxides p-n junction diode exhibiting an ideality factor of 1.36 and a rectification ratio of 4.85E2 at +/- 2 V.
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Submitted 14 August, 2023; v1 submitted 12 August, 2023;
originally announced August 2023.
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Structure maps for MAX phases formability revisited
Authors:
Yiming Zhang,
Yongjia Xu,
Qing Huang,
Shiyu Du,
Mian Li,
Youbing Li,
Zeyu Mao,
Qi Han
Abstract:
The extraordinary chemical diversity of MAX phases raises the question of how many and which novel ones are yet to be discovered. The conventional schemes rely either on executions of well designed experiments or elaborately crafted calculations; both of which have been key tactics within the past several decades that have yielded many of important new materials we are studying and using today. Ho…
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The extraordinary chemical diversity of MAX phases raises the question of how many and which novel ones are yet to be discovered. The conventional schemes rely either on executions of well designed experiments or elaborately crafted calculations; both of which have been key tactics within the past several decades that have yielded many of important new materials we are studying and using today. However, these approaches are expensive despite the emergence of high throughput automations or evolution of high speed computers. In this work, we have revisited the in prior proposed light duty strategy, i.e. structure map**, for describing the genomic conditions under which one MAX phase could form; that allow us to make successful formability and non formability separation of MAX phases with a fidelity of 95.5%. Our results suggest that the proposed coordinates, and further the developed structure maps, are able to offer a useful initial guiding principles for systematic screenings of potential MAX phases and provide untapped opportunities for their structure prediction and materials design.
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Submitted 18 July, 2023;
originally announced July 2023.
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Spectroscopic evidence for topological band structure in FeTe$_{0.55}$Se$_{0.45}$
Authors:
Y. -F. Li,
S. -D. Chen,
M. Garcia-Diez,
M. I. Iraola,
H. Pfau,
Y. -L. Zhu,
Z. -Q. Mao,
T. Chen,
M. Yi,
P. -C. Dai,
J. A. Sobota,
M. Hashimoto,
M. G. Vergniory,
D. -H. Lu,
Z. -X. Shen
Abstract:
FeTe$_{0.55}$Se$_{0.45}$(FTS) occupies a special spot in modern condensed matter physics at the intersections of electron correlation, topology, and unconventional superconductivity. The bulk electronic structure of FTS is predicted to be topologically nontrivial thanks to the band inversion between the $d_{xz}$ and $p_z$ bands along $Γ$-$Z$. However, there remain debates in both the authenticity…
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FeTe$_{0.55}$Se$_{0.45}$(FTS) occupies a special spot in modern condensed matter physics at the intersections of electron correlation, topology, and unconventional superconductivity. The bulk electronic structure of FTS is predicted to be topologically nontrivial thanks to the band inversion between the $d_{xz}$ and $p_z$ bands along $Γ$-$Z$. However, there remain debates in both the authenticity of the Dirac surface states (DSS) and the experimental deviations of band structure from the theoretical band inversion picture. Here we resolve these debates through a comprehensive ARPES investigation. We first observe a persistent DSS independent of $k_z$. Then, by comparing FTS with FeSe which has no band inversion along $Γ$-$Z$, we identify the spectral weight fingerprint of both the presence of the $p_z$ band and the inversion between the $d_{xz}$ and $p_z$ bands. Furthermore, we propose a reconciling band structure under the framework of a tight-binding model preserving crystal symmetry. Our results highlight the significant influence of correlation on modifying the band structure and make a strong case for the existence of topological band structure in this unconventional superconductor.
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Submitted 22 August, 2023; v1 submitted 7 July, 2023;
originally announced July 2023.
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Wireless magneto-ionics: voltage control of magnetism by bipolar electrochemistry
Authors:
Zheng Ma,
Laura Fuentes-Rodriguez,
Zhengwei Tan,
Eva Pellicer,
Llibertat Abad,
Javier Herrero-Martín,
Enric Menéndez,
Nieves Casañ-Pastor,
Jordi Sort
Abstract:
Modulation of magnetic properties through voltage-driven ion motion and redox processes, i.e., magneto-ionics, is a unique approach to control magnetism with electric field for low-power memory and spintronic applications. So far, magneto-ionics has been achieved through direct electrical connections to the actuated material. Here we evidence that an alternative way to reach such control exists in…
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Modulation of magnetic properties through voltage-driven ion motion and redox processes, i.e., magneto-ionics, is a unique approach to control magnetism with electric field for low-power memory and spintronic applications. So far, magneto-ionics has been achieved through direct electrical connections to the actuated material. Here we evidence that an alternative way to reach such control exists in a wireless manner. Induced polarization in the conducting material immersed in the electrolyte, without direct wire contact, promotes wireless bipolar electrochemistry, an alternative pathway to achieve voltage-driven control of magnetism based on the same electrochemical processes involved in direct-contact magneto-ionics. A significant tunability of magnetization is accomplished for cobalt nitride thin films, including transitions between paramagnetic and ferromagnetic states. Such effects can be either volatile or non-volatile depending on the electrochemical cell configuration. These results represent a fundamental breakthrough that may inspire future device designs for applications in bioelectronics, catalysis, neuromorphic computing, or wireless communications.
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Submitted 23 June, 2023;
originally announced June 2023.
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Unveiling the nucleation and growth of Zr oxide precipitates of internally oxidized Nb3Sn superconductors
Authors:
Jaeyel Lee,
Zugang Mao,
Dieter Isheim,
David N Seidman,
Xingchen Xu
Abstract:
We report on atomic-scale analyses of nucleation and growth of Zr oxide precipitates and the microstructural evolution of internally oxidized Nb3Sn wires for high-field superconducting magnet applications, utilizing atom probe tomography (APT), transmission electron microscopy (TEM), and first-principles calculations. APT analyses reveal that prior to interfacial reactions at Nb/Nb3Sn interfaces,…
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We report on atomic-scale analyses of nucleation and growth of Zr oxide precipitates and the microstructural evolution of internally oxidized Nb3Sn wires for high-field superconducting magnet applications, utilizing atom probe tomography (APT), transmission electron microscopy (TEM), and first-principles calculations. APT analyses reveal that prior to interfacial reactions at Nb/Nb3Sn interfaces, Zr atoms in an unreacted Nb-1Zr-4Ta (at.%) alloy form clusters with O atoms owing to their high affinity for oxygen and are segregated at grain boundaries (GBs) in the Nb grains. Then, nucleation of Zr oxide precipitates occurs in Nb3Sn and at Nb3Sn/Nb interfaces, driven by the small solubility of Zr and O in Nb3Sn compared to Nb. Quantitative APT and TEM analyses of Zr oxide precipitates in Nb3Sn layers demonstrate the nucleation, growth, and coarsening processes of Zr oxide precipitates in Nb3Sn layers. A high number density of Zr oxide nanoprecipitates is observed in the Nb3Sn layers, ~10^23 per m^3, with a mean precipitate diam. <10 nm at 625 oC and 700 oC, which provide pinning centers for grain refinement of Nb3Sn, <100 nm diam., and serve as pinning sites for fluxons. First-principles calculations and classical nucleation theory are employed to describe the nucleation of Zr oxide precipitates in Nb3Sn: energy barriers and the critical radius for nucleation of Zr oxide precipitates in Nb3Sn. Our research yields the kinetic pathways for nucleation and growth of Zr oxide precipitates and the microstructural evolution of Nb3Sn layers, which helps to improve the fabrication process of internally oxidized Nb3Sn wires for high-field superconducting magnets.
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Submitted 2 August, 2023; v1 submitted 19 June, 2023;
originally announced June 2023.
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Pressure tunable quantum anomalous Hall states in a topological antiferromagnet
Authors:
Su Kong Chong,
Chao Lei,
Jie Li,
Yang Cheng,
David Graf,
Seng Huat Lee,
Masaki Tanabe,
Ting-Hsun Yang,
Zhiqiang Mao,
Allan H. MacDonald,
Kang L. Wang
Abstract:
Mechanical modulation of the lattice parameter can modify the electronic structure and manipulate the magnetic coupling of a material without introducing impurities. Inspired by success in pressure-controlled magnetism, we investigate the effect of hydrostatic pressure on quantized Chern states in the antiferromagnetic topological insulator MnBi2Te4, using transport as a probe. We show that pressu…
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Mechanical modulation of the lattice parameter can modify the electronic structure and manipulate the magnetic coupling of a material without introducing impurities. Inspired by success in pressure-controlled magnetism, we investigate the effect of hydrostatic pressure on quantized Chern states in the antiferromagnetic topological insulator MnBi2Te4, using transport as a probe. We show that pressure can enhance the robustness of quantum anomalous Hall (QAH) phases that are otherwise delicate in 7SL MnBi2Te4 and in the spin-flop (SF) state of 8SL MnBi2Te4. We explain our findings using a coupled Dirac cone model of MnBi2Te4, which identifies stronger hybridization between van der Waals layers as the driver of topological states. We further demonstrate that moderate pressures readily available in laboratory systems can provide reversible control of magnetic and topological phases. Our results reveal a strong connection between the mechanical engineering of band topology and magnetism.
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Submitted 17 June, 2023;
originally announced June 2023.
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High-Entropy Enhanced Negative Thermal Expansion Perfomance in Antiperovkites
Authors:
Xiuliang Yuan,
Bing Wang,
Ying Sun,
Huaiming Guo,
Kewen Shi,
Sihao Deng,
Lunhua He,
Huiqing Lu,
Hong Zhang,
Shengdi Xu,
Yi Du,
Weichang Hao,
Shengqi Chu,
Zhijie Ma,
Shihai An,
** Cui,
Dongmei Hu,
Huiming Han,
Cong Wang
Abstract:
The negative thermal expansion (NTE) materials, which can act as thermal-expansion compensators to counteract the positive thermal expansion, have great applications merit in precision engineering. However, the exploration of NTE behavior with a wide temperature range has reached its upper ceiling through traditional do** strategies due to composition limitations. The unique sluggish characteris…
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The negative thermal expansion (NTE) materials, which can act as thermal-expansion compensators to counteract the positive thermal expansion, have great applications merit in precision engineering. However, the exploration of NTE behavior with a wide temperature range has reached its upper ceiling through traditional do** strategies due to composition limitations. The unique sluggish characteristic in phase transition and extended optimization space in recent high entropy systems has great potential to broaden the temperature range in electronic transitions-induced NTE materials. Mn-based anti-perovskites offer an ideal platform for the exploration of high entropy NTE material due to their abundant element selection and controllable NTE performance. In this paper, the high entropy strategy is first introduced to broaden the NTE temperature range by relaxing the abrupt phase transition in Mn-based anti-perovskite nitride. We propose an empirical screening method to synthesize the high-entropy anti-perovskite (HEAP). it is found that magnetic phase separation from anti-ferromagnetic CII to paramagnetic CI surviving in an ultra-wide temperature range of 5K<=T<=350K (Delta_T=345K), revealing a unique sluggish characteristic. Consequently, a remarkable NTE behavior (up to Delta_T=235K, 5K<=T<=240K) with a coefficient of thermal expansion of -4.7x10-6/K, has been obtained in HEAP. It is worth noting that the temperature range is two/three times wider than that of low-entropy systems. The sluggish characteristic has been further experimentally proved to come from disturbed phase transition dynamics due to distortion in atomic spacing and chemical environmental fluctuation observed by the spherical aberration-corrected electron microscope. Our demonstration provides a unique paradigm for broadening the temperature range of NTE materials induced by phase transition through entropy engineering.
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Submitted 4 March, 2024; v1 submitted 31 May, 2023;
originally announced May 2023.
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Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting
Authors:
Jiarui Gong,
Donghyeok Kim,
Hokyung Jang,
Fikadu Alema,
Qingxiao Wang,
Tien Khee Ng,
Shuoyang Qiu,
Jie Zhou,
Xin Su,
Qinchen Lin,
Ranveer Singh,
Haris Abbasi,
Kelson Chabak,
Gregg Jessen,
Clincy Cheung,
Vincent Gambin,
Shubhra S. Pasayat,
Andrei Osinsky,
Boon,
S. Ooi,
Chirag Gupta,
Zhenqiang Ma
Abstract:
The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type do** in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face se…
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The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type do** in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face severe challenges in further advancing the $β$-Ga$_2$O$_3$ bipolar devices due to their unfavorable band alignment and the poor p-type oxide crystal quality. In this work, we applied the semiconductor grafting approach to fabricate monocrystalline Si/$β$-Ga$_2$O$_3$ p-n diodes for the first time. With enhanced concentration of oxygen atoms at the interface of Si/$β$-Ga$_2$O$_3$, double side surface passivation was achieved for both Si and $β$-Ga$_2$O$_3$ with an interface Dit value of 1-3 x 1012 /cm2 eV. A Si/$β$-Ga$_2$O$_3$ p-n diode array with high fabrication yield was demonstrated along with a diode rectification of 1.3 x 107 at +/- 2 V, a diode ideality factor of 1.13 and avalanche reverse breakdown characteristics. The diodes C-V shows frequency dispersion-free characteristics from 10 kHz to 2 MHz. Our work has set the foundation toward future development of $β$-Ga$_2$O$_3$-based transistors.
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Submitted 30 May, 2023;
originally announced May 2023.
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Complex-valued neural operator assisted soliton identification
Authors:
Ming Zhang,
Qi Meng,
Deng Zhang,
Yue Wang,
Guanghui Wang,
Zhiming Ma,
Li Chen,
Tie-Yan Liu
Abstract:
The numerical determination of solitary states is an important topic for such research areas as Bose-Einstein condensates, nonlinear optics, plasma physics, etc. In this paper, we propose a data-driven approach for identifying solitons based on dynamical solutions of real-time differential equations. Our approach combines a machine-learning architecture called the complex-valued neural operator (C…
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The numerical determination of solitary states is an important topic for such research areas as Bose-Einstein condensates, nonlinear optics, plasma physics, etc. In this paper, we propose a data-driven approach for identifying solitons based on dynamical solutions of real-time differential equations. Our approach combines a machine-learning architecture called the complex-valued neural operator (CNO) with an energy-restricted gradient optimization. The former serves as a generalization of the traditional neural operator to the complex domain, and constructs a smooth map** between the initial and final states; the latter facilitates the search for solitons by constraining the energy space. We concretely demonstrate this approach on the quasi-one-dimensional Bose-Einstein condensate with homogeneous and inhomogeneous nonlinearities. Our work offers a new idea for data-driven effective modeling and studies of solitary waves in nonlinear physical systems.
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Submitted 25 May, 2023;
originally announced May 2023.
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Preferential bond formation and interstitial/vacancy annihilation rate drive atomic clustering in gallium ion sputtered compound materials
Authors:
Zhenyu Ma,
Xin Zhang,
Pu Liu,
Yong Deng,
Wenyu Hu,
Longqing Chen,
Jun Zhu,
Sen Chen,
Zhengshang Wang,
Yuechun Shi,
Jian Ma,
Xiaoyi Wang,
Yang Qiu,
Kun Zhang,
Xudong Cui,
Thomas Walther
Abstract:
The investigation of chemical reactions during the ion irradiation is a frontier for the study of the ion-material interaction. In order to derive the contribution of bond formation to chemistry of ion produced nanoclusters, the valence electron energy loss spectroscopy (VEELS) was exploited to investigate the Ga$^+$ ion damage in Al$_2$O$_3$, InP and InGaAs, where each target material has been sh…
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The investigation of chemical reactions during the ion irradiation is a frontier for the study of the ion-material interaction. In order to derive the contribution of bond formation to chemistry of ion produced nanoclusters, the valence electron energy loss spectroscopy (VEELS) was exploited to investigate the Ga$^+$ ion damage in Al$_2$O$_3$, InP and InGaAs, where each target material has been shown to yield different process for altering the clustering of recoil atoms: metallic Ga, metallic In and InGaP clusters in Al$_2$O$_3$, InP and InGaAs respectively. Supporting simulations based on Monte Carlo and crystal orbital Hamiltonianindicate that the chemical constitution of cascade induced nano-precipitates is a result of a competition between interstitial/vacancy consumption rate and preferential bond formation.
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Submitted 23 May, 2023;
originally announced May 2023.
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Superconductivity near 80 Kelvin in single crystals of La3Ni2O7 under pressure
Authors:
Hualei Sun,
Mengwu Huo,
Xunwu Hu,
**gyuan Li,
Yifeng Han,
Lingyun Tang,
Zhongquan Mao,
Pengtao Yang,
Bosen Wang,
**guang Cheng,
Dao-Xin Yao,
Guang-Ming Zhang,
Meng Wang
Abstract:
High-transition-temperature (high-T_c) superconductivity in cuprates has been discovered for more than three decades, but the underlying mechanism remains a mystery. Cuprates are the only unconventional superconducting family that host bulk superconductivity with T_cs above the liquid nitrogen boiling temperature at 77 Kelvin. Here we report an observation of superconductivity in single crystals o…
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High-transition-temperature (high-T_c) superconductivity in cuprates has been discovered for more than three decades, but the underlying mechanism remains a mystery. Cuprates are the only unconventional superconducting family that host bulk superconductivity with T_cs above the liquid nitrogen boiling temperature at 77 Kelvin. Here we report an observation of superconductivity in single crystals of La3Ni2O7 with a maximum T_c of 80 Kelvin at pressures between 14.0-43.5 gigapascals using high-pressure resistance and mutual inductive magnetic susceptibility measurements. The superconducting phase under high pressure exhibits an orthorhombic structure of Fmmm space group with the 3d_(x^2-y^2 ) and 3d_(z^2 ) orbitals of Ni cations strongly interacting with oxygen 2p orbitals. Our density functional theory calculations suggest the superconductivity emerges coincidently with the metallization of the σ-bonding bands under the Fermi level, consisting of the 3d_(z^2 ) orbitals with the apical oxygens connecting Ni-O bilayers. Thus, our discoveries not only reveal important clues for the high-T_c superconductivity in this Ruddlesden-Popper double-layered perovskite nickelates but also provide a new family of compounds to investigate the high-T_c superconductivity mechanism.
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Submitted 16 May, 2023;
originally announced May 2023.
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A simplified method characterizing magnetic ordering modulated photo-thermoelectric response in noncentrosymmetric semimetal Ca3Ru2O7
Authors:
Qiang Chen,
Jialin Li,
Huanfeng Zhu,
Tian Zhang,
Wei Tang,
Hui Xing,
** Peng,
Zhiqiang Mao,
Linjun Li
Abstract:
Photo-Thermoelectric (PTE) response is usually one of the main working mechanisms for photodetectors. However, as another fast and easier way to measure thermoelectric characteristics of materials, it can also reveal important physics such as electric-phonon coupling, electron-electron correlation, etc. Recently, the spin entropy related to magnetic order transition which contributes to thermoelec…
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Photo-Thermoelectric (PTE) response is usually one of the main working mechanisms for photodetectors. However, as another fast and easier way to measure thermoelectric characteristics of materials, it can also reveal important physics such as electric-phonon coupling, electron-electron correlation, etc. Recently, the spin entropy related to magnetic order transition which contributes to thermoelectric power is attracting more and more attention. Here, we demonstrate the PTE response can be reshaped when Ca3Ru2O7 undergoes meta-magnetic phase (MMP) transition driven by both temperature and magnetic field. Firstly, a sign change is observed crossing TS = 48 K and the linear polarization angle dependent PTE current maximizes along a-axis above TS while maximizes along b-axis below TS, which indicates that the antiferromagnetic spin order contributes to such spatial anisotropy. Secondly, in the temperature range of around 40 ~ 50 K, the PTE current is found to be sharply suppressed when external magnetic field is applied in plane along a-axis but is only gradually suppressed when applied field is along b-axis which gives out two critical fields. We attribute such suppression of PTE current under magnetic field to the suppression of the spin entropy in the phase transition between the antiferromagnetic state and the MMP state and the H-T phase diagrams of Ca3Ru2O7 is redrawn accordingly. Compared to previously work which trying to understand the magnetic phase transition in Ca3Ru2O7, such as neutron scattering, specific heat, and other advanced transport measurements, our work provides a more convenient yet efficient method, which may also find applications in other correlated spin materials in general.
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Submitted 16 May, 2023;
originally announced May 2023.
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Signatures of a gapless quantum spin liquid in the Kitaev material Na$_3$Co$_{2-x}$Zn$_x$SbO$_6$
Authors:
Zhongtuo Fu,
Ruokai Xu,
Yingqi Chen,
Song Bao,
Hong Du,
Jiahua Min,
Shuhan Zheng,
Yongjun Zhang,
Meifeng Liu,
Xiuzhang Wang,
Hong Li,
Ruidan Zhong,
Huiqian Luo,
Jun-Ming Liu,
Zhen Ma,
**sheng Wen
Abstract:
The honeycomb-lattice cobaltate Na$_3$Co$_2$SbO$_6$ has recently been proposed to be a proximate Kitaev quantum spin liquid~(QSL) candidate. However, non-Kitaev terms in the Hamiltonian lead to a zigzag-type antiferromagnetic~(AFM) order at low temperatures. Here, we partially substitute magnetic Co$^{2+}$ with nonmagnetic Zn$^{2+}$ and investigate the chemical do** effect in tuning the magnetic…
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The honeycomb-lattice cobaltate Na$_3$Co$_2$SbO$_6$ has recently been proposed to be a proximate Kitaev quantum spin liquid~(QSL) candidate. However, non-Kitaev terms in the Hamiltonian lead to a zigzag-type antiferromagnetic~(AFM) order at low temperatures. Here, we partially substitute magnetic Co$^{2+}$ with nonmagnetic Zn$^{2+}$ and investigate the chemical do** effect in tuning the magnetic ground states of Na$_3$Co$_{2-x}$Zn$_x$SbO$_6$. X-ray diffraction characterizations reveal no structural transition but quite tiny changes on the lattice parameters over our substitution range $0\leq x\leq0.4$. Magnetic susceptibility and specific heat results both show that AFM transition temperature is continuously suppressed with increasing Zn content $x$ and neither long-range magnetic order nor spin freezing is observed when $x\geq0.2$. More importantly, a linear term of the specific heat representing fermionic excitations is captured below 5~K in the magnetically disordered regime, as opposed to the $C_{\rm m}\propto T^3$ behavior expected for bosonic excitations in the AFM state. Based on the data above, we establish a magnetic phase diagram of Na$_3$Co$_{2-x}$Zn$_x$SbO$_6$. Our results indicate the presence of gapless fractional excitations in the samples with no magnetic order, evidencing a potential QSL state induced by do** in a Kitaev system.
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Submitted 26 April, 2023;
originally announced April 2023.
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Evidence of Weyl Fermion Enhanced Thermal Conductivity Under Magnetic Fields in Antiferromagnetic Topological Insulator Mn(Bi(1-x)Sb(x))2Te4
Authors:
Robert A. Robinson,
Seng Huat Lee,
Lu** Min,
**liang Ning,
Jianwei Sun,
Zhiqiang Mao
Abstract:
We report thermal conductivity and Seebeck effect measurements on Mn(Bi1-xSbx)2Te4 (MBST) with x = 0.26 under applied magnetic fields below 50 K. Our data shows clear indications of the electronic structure transition induced by the antiferromagnetic (AFM) to ferromagnetic (FM) transition driven by applied magnetic field as well as significant positive magnetothermal conductivity in the Weyl semim…
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We report thermal conductivity and Seebeck effect measurements on Mn(Bi1-xSbx)2Te4 (MBST) with x = 0.26 under applied magnetic fields below 50 K. Our data shows clear indications of the electronic structure transition induced by the antiferromagnetic (AFM) to ferromagnetic (FM) transition driven by applied magnetic field as well as significant positive magnetothermal conductivity in the Weyl semimetal state of MBST. Further, by examining the dependence of magnetothermal conductivity on field orientation for MBST and comparison with the magnetothermal conductivity of MnBi2Te4 we see evidence of a contribution to thermal conductivity due to Weyl fermions in the FM phase of MBST. From the temperature dependence of Seebeck coefficient under magnetic fields for MBST, we also observed features consistent with the Fermi surface evolution from a hole pocket in the paramagnetic state to a Fermi surface with coexistence of electron and hole pockets in the FM state. These findings provide further evidence for the field-driven topological phase transition from an AFM topological insulator to a FM Weyl semimetal.
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Submitted 12 April, 2023;
originally announced April 2023.
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Large Violation of the Wiedemann Franz Law in Heusler, Ferromagnetic, Weyl Semimetal Co$_2$MnAl
Authors:
Robert A. Robinson,
Lu** Min,
Seng Huat Lee,
Peigang Li,
Yu Wang,
**guo Li,
Zhiqiang Mao
Abstract:
The Wiedemann-Franz (WF) law relates the electronic component of the thermal conductivity to the electrical conductivity in metals through the Lorenz number. The WF law has proven to be remarkably robust, however violations have been observed in many topological materials. In this work, we report thermoelectric measurements conducted on Heusler, ferromagnetic, Weyl semimetal Co$_2$MnAl which shows…
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The Wiedemann-Franz (WF) law relates the electronic component of the thermal conductivity to the electrical conductivity in metals through the Lorenz number. The WF law has proven to be remarkably robust, however violations have been observed in many topological materials. In this work, we report thermoelectric measurements conducted on Heusler, ferromagnetic, Weyl semimetal Co$_2$MnAl which shows a drastic, temperature dependent violation of the WF law below 300 K. We then discuss our result in the context of known physical explanations for WF law violation. Both the magnitude and temperature dependence of the violation in Co2MnAl are extreme, indicating that there may be more than one effect contributing to the violation in this system.
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Submitted 11 April, 2023;
originally announced April 2023.
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Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4
Authors:
Seng Huat Lee,
David Graf,
Robert Robinson,
John Singleton,
Johanna C. Palmstrom,
Zhiqiang Mao
Abstract:
We report c-axis transport studies on magnetic topological insulators Mn(Bi1-xSbx)2Te4. We performed systematic c-axis magnetoresistivity measurements under high magnetic fields (up to 35 T) on several representative samples. We find the lightly hole- and lightly electron-doped samples, while both having the same order of magnitude of carrier density and similar spin-flop transitions, exhibit shar…
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We report c-axis transport studies on magnetic topological insulators Mn(Bi1-xSbx)2Te4. We performed systematic c-axis magnetoresistivity measurements under high magnetic fields (up to 35 T) on several representative samples. We find the lightly hole- and lightly electron-doped samples, while both having the same order of magnitude of carrier density and similar spin-flop transitions, exhibit sharp contrast in electronic anisotropy and transport mechanism. The electronic anisotropy is remarkably enhanced for the lightly hole-doped sample relative to pristine MnBi2Te4 but not for the lightly electron-doped sample. The lightly electron-doped sample displays a giant negative longitudinal magnetoresistivity (LMR) induced by the spin-valve effect at the spin-flop transition field, whereas the lightly hole-doped sample exhibits remarkable negative LMR consistent with the chiral anomaly behavior of a Weyl semimetal. Furthermore, we find the large negative LMR of the lightly hole-doped sample extends to a wide temperature range above the Néel temperature (T_N) where the magnetoconductivity is proportional to B^2. This fact, together with the short-range intralayer ferromagnetic correlation revealed in isothermal magnetization measurements, suggests the possible presence of the Weyl state above T_N. These results demonstrate that in the c-axis magnetotransport of Mn(Bi1-xSbx)2Te4, the spin scattering is dominant in the lightly electron-doped sample but overwhelmed by the chiral anomaly effect in the lightly hole-doped sample due to the presence of the Weyl state. These findings extend the understanding of the transport properties of Mn(Bi1-xSbx)2Te4.
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Submitted 11 April, 2023;
originally announced April 2023.
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Identifying an environment-induced localization transition from entropy and conductance
Authors:
Zhanyu Ma,
Cheolhee Han,
Yigal Meir,
Eran Sela
Abstract:
Environment-induced localization transitions (LT) occur when a small quantum system interacts with a bath of harmonic oscillators. At equilibrium, LTs are accompanied by an entropy change, signaling the loss of coherence. Despite extensive efforts, equilibrium LTs have yet to be observed. Here, we demonstrate that ongoing experiments on double quantum dots that measure entropy using a nearby quant…
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Environment-induced localization transitions (LT) occur when a small quantum system interacts with a bath of harmonic oscillators. At equilibrium, LTs are accompanied by an entropy change, signaling the loss of coherence. Despite extensive efforts, equilibrium LTs have yet to be observed. Here, we demonstrate that ongoing experiments on double quantum dots that measure entropy using a nearby quantum point contact (QPC) realize the celebrated spin-boson model and allow to measure the entropy change of its LT. We find a Kosterlitz-Thouless flow diagram, leading to a universal jump in the spin-bath interaction, reflected in a discontinuity in the zero temperature QPC conductance.
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Submitted 24 September, 2023; v1 submitted 10 April, 2023;
originally announced April 2023.
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XPS analysis of molecular contamination and sp2 amorphous carbon on oxidized (100) diamond
Authors:
Ricardo Vidrio,
Daniel Vincent,
Benjamin Bachman,
Cesar Saucedo,
Maryam Zahedian,
Zihong Xu,
Junyu Lai,
Timothy A. Grotjohn,
Shimon Kolkowitz,
Jung-Hun Seo,
Robert J. Hamers,
Keith G. Ray,
Zhenqiang Ma,
Jennifer T. Choy
Abstract:
The efficacy of oxygen (O) surface terminations on diamond is an important factor for the performance and stability for diamond-based quantum sensors and electronics. Given the wide breadth of O-termination techniques, it can be difficult to discern which method would yield the highest and most consistent O coverage. Furthermore, the interpretation of surface characterization techniques is complic…
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The efficacy of oxygen (O) surface terminations on diamond is an important factor for the performance and stability for diamond-based quantum sensors and electronics. Given the wide breadth of O-termination techniques, it can be difficult to discern which method would yield the highest and most consistent O coverage. Furthermore, the interpretation of surface characterization techniques is complicated by surface morphology and purity, which if not accounted for will yield inconsistent determination of the oxygen coverage. We present a comprehensive approach to consistently prepare and analyze oxygen termination of surfaces on (100) single-crystalline diamond. We report on X-ray Photoelectron Spectroscopy (XPS) characterization of diamond surfaces treated with six oxidation methods that include various wet chemical oxidation techniques, photochemical oxidation with UV illumination, and steam oxidation using atomic layer deposition (ALD). Our analysis entails a rigorous XPS peak-fitting procedure for measuring the functionalization of O-terminated diamond. The findings herein have provided molecular-level insights on oxidized surfaces in (100) diamond, including the demonstration of clear correlation between the measured oxygen atomic percentage and the presence of molecular contaminants containing nitrogen, silicon, and sulfur. We also provide a comparison of the sp2 carbon content with the O1s atomic percentage and discern a correlation with the diamond samples treated with dry oxidation which eventually tapers off at a max O1s atomic percentage value of 7.09 +/- 0.40%. Given these results, we conclude that the dry oxidation methods yield some of the highest oxygen amounts, with the ALD water vapor technique proving to be the cleanest technique out of all the oxidation methods explored in this work.
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Submitted 8 May, 2024; v1 submitted 5 April, 2023;
originally announced April 2023.