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A Unified Model for Non-Fickian Diffusion and Anomalous Swelling of Glassy Polymer Gels
Authors:
Peihan Lyu,
Zhaoyu Ding,
Masao Doi,
Xingkun Man
Abstract:
A sheet of glassy polymers placed in a solvent shows swelling behaviors quite different from that of soft polymers (rubbers and gels). (1) Non-Fickian diffusion (called case II diffusion): As solvent permeates into the sample, a sharp front is created between the swollen part and the glassy part, and it moves toward the center at constant speed. (2) Nonmonotonous swelling: The thickness of the sam…
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A sheet of glassy polymers placed in a solvent shows swelling behaviors quite different from that of soft polymers (rubbers and gels). (1) Non-Fickian diffusion (called case II diffusion): As solvent permeates into the sample, a sharp front is created between the swollen part and the glassy part, and it moves toward the center at constant speed. (2) Nonmonotonous swelling: The thickness of the sample first increases and then decreases toward the equilibrium value. Here we propose a theory to explain such anomalous behavior by extending the previous theory for swelling of soft gels. We regard the material as a continuum mixture of a glassy polymer network and solvent. We assume that the polymer network is a viscoelastic gel of glassy polymers, and its relaxation time depends strongly on solvent concentration. We show that this theory explains the above two characteristics of glassy polymers in a simple and unified framework. The theory predicts how the permeation speed of the solvent and the characteristic times of the swelling process depend on material parameters and experimental conditions, which can be checked experimentally.
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Submitted 23 April, 2024; v1 submitted 6 February, 2024;
originally announced February 2024.
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Unravelling Negative In-plane Stretchability of 2D MOF by Large Scale Machine Learning Potential Molecular Dynamics
Authors:
Dong Fan,
Aydin Ozcan,
Pengbo Lyu,
Guillaume Maurin
Abstract:
Two-dimensional (2D) metal-organic frameworks (MOFs) hold immense potential for various applications due to their distinctive intrinsic properties compared to their 3D analogues. Herein, we designed in silico a highly stable NiF$_2$(pyrazine)$_2$ 2D MOF with a two-periodic wine-rack architecture. Extensive first-principles calculations and Molecular Dynamics simulations based on a newly developed…
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Two-dimensional (2D) metal-organic frameworks (MOFs) hold immense potential for various applications due to their distinctive intrinsic properties compared to their 3D analogues. Herein, we designed in silico a highly stable NiF$_2$(pyrazine)$_2$ 2D MOF with a two-periodic wine-rack architecture. Extensive first-principles calculations and Molecular Dynamics simulations based on a newly developed machine learning potential (MLP) revealed that this 2D MOF exhibits huge in-plane Poisson's ratio anisotropy. This results into an anomalous negative in-plane stretchability, as evidenced by an uncommon decrease of its in-plane area upon the application of uniaxial tensile strain that makes this 2D MOF particularly attractive for flexible wearable electronics and ultra-thin sensor applications. We further demonstrated that the derived MLP offers a unique opportunity to effectively anticipate the finite temperature mechanical properties of MOFs at large scale. As a proof-concept, MLP-based Molecular Dynamics simulations were successfully achieved on 2D NiF$_2$(pyrazine)$_2$ with a dimension of 28.2$\times$28.2 nm$^2$ relevant to the length scale experimentally attainable for the fabrication of MOF film.
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Submitted 27 July, 2023;
originally announced July 2023.
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Atomically-precise Vacancy-assembled Quantum Antidots
Authors:
Hanyan Fang,
Harshitra Mahalingam,
Xinzhe Li,
Xu Han,
Zhizhan Qiu,
Yixuan Han,
Keian Noori,
Dikshant Dulal,
Hongfei Chen,
Pin Lyu,
Tianhao Yang,
**g Li,
Chenliang Su,
Wei Chen,
Yongqing Cai,
Antonio Castro H. Neto,
Kostya S. Novoselov,
Aleksandr Rodin,
Jiong Lu
Abstract:
Patterning antidots ("voids") into well-defined antidot lattices creates an intriguing class of artificial structures for the periodic modulation of 2D electron systems, leading to anomalous transport properties and exotic quantum phenomena as well as enabling the precise bandgap engineering of 2D materials to address technological bottleneck issues. However, realizing such atomic-scale quantum an…
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Patterning antidots ("voids") into well-defined antidot lattices creates an intriguing class of artificial structures for the periodic modulation of 2D electron systems, leading to anomalous transport properties and exotic quantum phenomena as well as enabling the precise bandgap engineering of 2D materials to address technological bottleneck issues. However, realizing such atomic-scale quantum antidots (QADs) is infeasible by current nanolithographic techniques. Here, we report an atomically-precise bottom-up fabrication of a series of atomic-scale QADs with elegantly engineered quantum states through a controllable assembly of a chalcogenide single vacancy (SV) in 2D PtTe2, a type-II Dirac semimetal. Te SVs as atomic-scale "antidots" undergo thermal migration and assembly into highly-ordered SV lattices spaced by a single Te atom, reaching the ultimate downscaling limit of antidot lattices. Increasing the number of SVs in QADs strengthens the cumulative repulsive potential and consequently enhances collective interference of multiple-pocket scattered quasiparticles inside QADs, creating multi-level quantum hole states with tunable gap from telecom to far-infrared regime. Moreover, precisely engineered quantum hole states of QADs are symmetry-protected and thus survive upon atom-by-atom oxygen substitutional do**. Therefore, SV-assembled QADs exhibit unprecedented robustness and property tunability, which not only holds the key to their future applications but also embody a wide variety of material technologies.
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Submitted 6 May, 2023;
originally announced May 2023.
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Giant gate-tunable renormalization of spin-correlated flat-band states and bandgap in a 2D magnetic insulator
Authors:
Pin Lyu,
Joachim Sødequist,
Xiaoyu Sheng,
Zhizhan Qiu,
Anton Tadich,
Qile Li,
Mark T. Edmonds,
Jesús Redondo,
Martin Švec,
Thomas Olsen,
Jiong Lu
Abstract:
Emergent quantum phenomena in two-dimensional van der Waal (vdW) magnets are largely governed by the interplay between the exchange and Coulomb interactions. The ability to tune the Coulomb interaction in such strongly correlated materials enables the precise control of spin-correlated flat-band states, bandgap (Eg) and unconventional magnetism, all of which are crucial for next-generation spintro…
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Emergent quantum phenomena in two-dimensional van der Waal (vdW) magnets are largely governed by the interplay between the exchange and Coulomb interactions. The ability to tune the Coulomb interaction in such strongly correlated materials enables the precise control of spin-correlated flat-band states, bandgap (Eg) and unconventional magnetism, all of which are crucial for next-generation spintronics and magnonics applications. Here, we demonstrate a giant gate-tunable renormalization of spin-correlated flat-band states and bandgap in magnetic chromium tribromide (CrBr3) monolayers grown on graphene. Our gate-dependent scanning tunneling spectroscopy (STS) studies reveal that the inter-flat-band spacing and bandgap of CrBr3 can be continuously tuned by 120 meV and 240 meV respectively via electrostatic injection of carriers into the hybrid CrBr3/graphene system, equivalent to the modulation of the Cr on-site Coulomb repulsion energy by 500 meV. This can be attributed to the self-screening of CrBr3 arising from the gate-induced carriers injected into CrBr3, which dominates over the opposite trend from the remote screening of the graphene substrate. Precise tuning of the spin-correlated flat-band states and bandgap in 2D magnets via electrostatic modulation of Coulomb interactions not only provides new strategies for optimizing the spin transport channels but also may exert a crucial influence on the exchange energy and spin-wave gap, which could raise the critical temperature for magnetic order.
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Submitted 6 December, 2022;
originally announced December 2022.
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Visualization of Strain-Induced Landau Levels in a Graphene - Black Phosphorus Heterostructure
Authors:
Thi-Hai-Yen Vu,
Pin Lyu,
Na Hyun Jo,
Chi Xuan Trang,
Qile Li,
Aaron Bostwick,
Chris Jozwiak,
Eli Rotenberg,
Jiong Lu,
Michael S. Fuhrer,
Mark T. Edmonds
Abstract:
Strain-induced pseudo magnetic fields offer the possibility of realizing zero magnetic field Quantum Hall effect in graphene, possibly up to room temperature, representing a promising avenue for lossless charge transport applications. Strain engineering on graphene has been achieved via random nanobubbles or artificial nanostructures on the substrate, but the highly localized and non-uniform pseud…
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Strain-induced pseudo magnetic fields offer the possibility of realizing zero magnetic field Quantum Hall effect in graphene, possibly up to room temperature, representing a promising avenue for lossless charge transport applications. Strain engineering on graphene has been achieved via random nanobubbles or artificial nanostructures on the substrate, but the highly localized and non-uniform pseudomagnetic fields can make spectroscopic probes of electronic structure difficult. Heterostructure engineering offers an alternative approach: By stacking graphene on top of another van der Waals material with large lattice mismatch at a desired twist angle, it is possible to generate large strain-induced pseudo magnetic fields uniformly over the entire heterostructure. Here, we report using nano-angle resolved photoemission spectroscopy (nano-ARPES) to probe the electronic bandstructure of a graphene/black phosphorus heterostructure (G/BP). By directly measuring the iso-energy contours of graphene and black phosphorus we determine a twist angle of 20-degrees in our heterostructure. High-resolution nano-ARPES of the graphene bands near the Fermi level reveals the emergence of flat bands located within the Dirac cone. The spacing of the flat bands is consistent with Landau level formation in graphene, and corresponds to a pseudo-field of 11.36 T. Our work provides a new way to study quantum Hall phases induced by strain in 2D materials and heterostructures.
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Submitted 8 November, 2022;
originally announced November 2022.
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Gate-tunable artificial nucleus in graphene
Authors:
Mykola Telychko,
Keian Noori,
Hillol Biswas,
Dikshant Dulal,
Pin Lyu,
**g Li,
Hsin-Zon Tsai,
Hanyan Fang,
Zhizhan Qiu,
Zhun Wai Yap,
Kenji Watanabe,
Takashi Taniguchi,
Michael F. Crommie,
Aleksandr Rodin,
Jiong Lu
Abstract:
We report an atomically-precise integration of individual nitrogen (N) dopant as an in-plane artificial nucleus in a graphene device by atomic implantation to probe its gate-tunable quantum states and correlation effects. The N dopant creates the characteristic resonance state in the conduction band, revealing a giant carrier-dependent energetic renormalization up to 350 meV with respect to the Di…
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We report an atomically-precise integration of individual nitrogen (N) dopant as an in-plane artificial nucleus in a graphene device by atomic implantation to probe its gate-tunable quantum states and correlation effects. The N dopant creates the characteristic resonance state in the conduction band, revealing a giant carrier-dependent energetic renormalization up to 350 meV with respect to the Dirac point, accompanied by the observation of long-range screening effects. Joint density functional theory and tight-binding calculations with modified perturbation potential corroborate experimental findings and highlight the short-range character of N-induced perturbation.
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Submitted 17 November, 2021;
originally announced November 2021.
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Electronic Self-passivation of Single Vacancy in Black Phosphorus via a Controlled Ionization
Authors:
Hanyan Fang,
Aurelio Gallardo,
Dikshant Dulal,
Zhizhan Qiu,
Jie Su,
Mykola Telychko,
Harshitra Mahalingam,
Pin Lyu,
Yixuan Han,
Yi Zheng,
Yongqing Cai,
Aleksandr Rodin,
Pavel Jelínek,
Jiong Lu
Abstract:
We report that mono-elemental black phosphorus presents a new electronic self-passivation scheme of single vacancy (SV). By means of low-temperature scanning tunneling microscopy and bond-resolved non-contact atomic force microscopy, we demonstrate that the local reconstruction and ionization of SV into negatively charged $\mathrm{SV}^-$ leads to the passivation of dangling bonds and thus the quen…
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We report that mono-elemental black phosphorus presents a new electronic self-passivation scheme of single vacancy (SV). By means of low-temperature scanning tunneling microscopy and bond-resolved non-contact atomic force microscopy, we demonstrate that the local reconstruction and ionization of SV into negatively charged $\mathrm{SV}^-$ leads to the passivation of dangling bonds and thus the quenching of in-gap states, which can be achieved by mild thermal annealing or STM tip manipulation. SV exhibits a strong and symmetric Friedel oscillation (FO) pattern, while $\mathrm{SV}^-$ shows an asymmetric FO pattern with local perturbation amplitude reduced by one order of magnitude and a faster decay rate. The enhanced passivation by forming $\mathrm{SV}^-$ can be attributed to its weak dipole-like perturbation, consistent with density-functional theory and numerical calculations. Therefore, self-passivated $\mathrm{SV}^-$ is electronically benign and acts as a much weaker scattering center, which may hold the key to further enhance the charge mobility of BP and its analogs.
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Submitted 7 July, 2021;
originally announced July 2021.
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NiCl3 Monolayer: Dirac Spin-Gapless Semiconductor and Chern Insulator
Authors:
Junjie He,
Xiao Li,
Pengbo Lyu,
Petr Nachtigall
Abstract:
The great obstacle for practical applications of the quantum anomalous Hall (QAH) effect is the lack of suitable QAH materials (Chern insulators) with large non-trivial band gap, room-temperature magnetic order and high carrier mobility. The Nickle chloride (NiCl3) monolayer characteristics are investigated herein using first-principles calculations. It is reported that NiCl3 monolayers constitute…
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The great obstacle for practical applications of the quantum anomalous Hall (QAH) effect is the lack of suitable QAH materials (Chern insulators) with large non-trivial band gap, room-temperature magnetic order and high carrier mobility. The Nickle chloride (NiCl3) monolayer characteristics are investigated herein using first-principles calculations. It is reported that NiCl3 monolayers constitute a new class of Dirac materials with Dirac spin-gapless semiconducting and high-temperature ferromagnetism (~400K). Taking into account the spin-orbit coupling, the NiCl3 monolayer becomes an intrinsic insulator with a large non-trivial band gap of ~24 meV, corresponding to an operating temperature as high as ~280K at which the quantum anomalous Hall effect could be observed. The calculated large non-trivial gap, high Curie temperature and single-spin Dirac states reported herein for the NiCl3 monolayer lead us to propose that this material give a great promise for potential realization of a near-room temperature QAH effect and potential applications in spintronics. Last but not least the calculated Fermi velocities of Dirac fermion of about 4x105 m/s indicate very high mobility in NiCl3 monolayers.
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Submitted 3 October, 2016;
originally announced October 2016.
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Size effect of Ruderman-Kittel-Kasuya-Yosida interaction mediated by electrons in nanoribbons
Authors:
Shuo Mi,
Shuo-Hong Yuan,
Pin Lyu
Abstract:
We calculated the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between the magnetic impurities mediated by electrons in nanoribbons. It was shown that the RKKY interaction is strongly dependent on the width of the nanoribbon and the transverse positions of the impurities. The transverse confinement of electrons is responsible for the above size effect of the RKKY interaction. It provides a pot…
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We calculated the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between the magnetic impurities mediated by electrons in nanoribbons. It was shown that the RKKY interaction is strongly dependent on the width of the nanoribbon and the transverse positions of the impurities. The transverse confinement of electrons is responsible for the above size effect of the RKKY interaction. It provides a potential way to control the RKKY interaction by changing nanostructure geometry.
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Submitted 19 September, 2011;
originally announced September 2011.
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Ferromagnetism in diluted magnetic semiconductor quantum dot arrays embedded in semiconductors
Authors:
Pin Lyu,
Kyungsun Moon
Abstract:
We present an Anderson-type model Hamiltonian with exchange coupling between the localized spins and the confined holes in the quantum dots to study the ferromagnetism in diluted magnetic semiconductor (DMS) quantum dot arrays embedded in semiconductors. The hybridization between the quantum-confined holes in the DMS quantum dots and the itinerant holes in the semiconductor valence band makes ho…
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We present an Anderson-type model Hamiltonian with exchange coupling between the localized spins and the confined holes in the quantum dots to study the ferromagnetism in diluted magnetic semiconductor (DMS) quantum dot arrays embedded in semiconductors. The hybridization between the quantum-confined holes in the DMS quantum dots and the itinerant holes in the semiconductor valence band makes hole transfer between quantum dots, which can induce the long range ferromagnetic order of the localized spins. In addition, it makes the carrier spins both in the DMS quantum dots and in the semiconductors polarized. The spontaneous magnetization of the localized spins and the spin polarization of the holes are calculated using both the Weiss mean field approximation and the self-consistent spin wave approximation, which are developed for the present model.
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Submitted 29 October, 2002;
originally announced October 2002.
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Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions
Authors:
Pin Lyu,
Kyungsun Moon
Abstract:
Using the spin-polarized tunneling model and taking into account the basic physics of ferromagnetic semiconductors, we study the temperature dependence of the tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor (DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As. The experimentally observed TMR ratio is in reasonable agreement with our result based on the typical m…
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Using the spin-polarized tunneling model and taking into account the basic physics of ferromagnetic semiconductors, we study the temperature dependence of the tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor (DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As. The experimentally observed TMR ratio is in reasonable agreement with our result based on the typical material parameters. It is also shown that the TMR ratio has a strong dependence on both the itinerant-carrier density and the magnetic ion density in the DMS electrodes. This can provide a potential way to achieve larger TMR ratio by optimally adjusting the material parameters.
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Submitted 14 January, 2001;
originally announced January 2001.
