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Entropy Production by Underdamped Langevin Dynamics
Authors:
**ghao Lyu,
Kyle J. Ray,
James P. Crutchfield
Abstract:
Entropy production (EP) is a central quantity in nonequilibrium physics as it monitors energy dissipation, irreversibility, and free energy differences during thermodynamic transformations. Estimating EP, however, is challenging both theoretically and experimentally due to limited access to the system dynamics. For overdamped Langevin dynamics and Markov jump processes it was recently proposed tha…
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Entropy production (EP) is a central quantity in nonequilibrium physics as it monitors energy dissipation, irreversibility, and free energy differences during thermodynamic transformations. Estimating EP, however, is challenging both theoretically and experimentally due to limited access to the system dynamics. For overdamped Langevin dynamics and Markov jump processes it was recently proposed that, from thermodynamic uncertainty relations (TUR), short-time cumulant currents can be used to estimate EP without knowledge of the dynamics. Yet, estimation of EP in underdamped Langevin systems remains an active challenge. To address this, we derive a modified TUR that relates the statistics of two specific novel currents -- one cumulant current and one stochastic current -- to a system's EP. These two distinct but related currents are used to constrain EP in the modified TUR. One highlight is that there always exists a family of currents such that the uncertainty relations saturate, even for long-time averages and in nonsteady-state scenarios. Another is that our method only requires limited knowledge of the dynamics -- specifically, the dam**-coefficient to mass ratio and the diffusion constant. This uncertainty relation allows estimating EP for both overdamped and underdamped Langevin dynamics. We validate the method numerically, through applications to several underdamped systems, to underscore the flexibility in obtaining EP in nonequilibrium Langevin systems.
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Submitted 24 June, 2024; v1 submitted 20 May, 2024;
originally announced May 2024.
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Pressure tunable magnetic skyrmion phase in Co8Zn8Mn4 single crystals
Authors:
Zhun Li,
Xinrun Mi,
Xinming Wang,
Jian Lyu,
Na Su,
Aifeng Wang,
Yisheng Chai,
Bao Yuan,
Wanju Luo,
Hui Cheng,
Jianxiang Gao,
Hongliang Wang,
Lijie Hao,
Mingquan He,
Junying Shen,
Young Sun,
Xin Tong
Abstract:
In a magnetic skyrmion phase, magnetic moments form vortex-like topological textures which are of both fundamental and industrial interests. In $β$-Mn-type Co-Zn-Mn alloys, chrial magnetic skyrmions emerge above room temperature, providing a unique system for studying the skrymion physics and exploring spintronics applications. However, the magnetic skyrmion phase is typically confined in a narrow…
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In a magnetic skyrmion phase, magnetic moments form vortex-like topological textures which are of both fundamental and industrial interests. In $β$-Mn-type Co-Zn-Mn alloys, chrial magnetic skyrmions emerge above room temperature, providing a unique system for studying the skrymion physics and exploring spintronics applications. However, the magnetic skyrmion phase is typically confined in a narrow and limited temperature ($T$) and magnetic field ($H$) range. Here, we demonstrate that hydrostatic pressure can expand the skyrmion phase in the $T-H$ phase diagram of single-crystalline Co$_8$Zn$_8$Mn$_4$. At ambient pressure, signatures of skyrmions are seen within $T\sim302-308$ K and $H\sim50-100$ Oe. Applying a moderate pressure of 6 kbar extends this range to $T\sim300-310$ K and $H\sim50-150$ Oe. However, further escalation of pressure to 10 kbar results in a slight contraction of the skyrmion phase. These findings underscore the sensitivity of the skyrmion phase in Co$_8$Zn$_8$Mn$_4$ to external pressures, and hint at the potential of strain engineering, particularly in $β$-Mn-type Co-Zn-Mn thin films, as a promising avenue to customize the skyrmion phase.
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Submitted 22 February, 2024;
originally announced February 2024.
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Provoking topology by octahedral tilting in strained SrNbO$_3$
Authors:
Alla Chikina,
Victor Rosendal,
Hang Li,
Eduardo B. Guedes,
Marco Caputo,
Nicholas Clark Plumb,
Ming Shi,
Dirch Hjorth Petersen,
Mads Brandbyge,
Walber Hugo Brito,
Ekaterina Pomjakushina,
Valerio Scagnoli,
Jike Lyu,
Marisa Medarde,
Elizabeth Skoropata,
Urs Staub,
Shih-Wen Huang,
Felix Baumberger,
Nini Pryds,
Milan Radovic
Abstract:
Transition metal oxides with a wide variety of electronic and magnetic properties offer an extraordinary possibility to be a platform for develo** future electronics based on unconventional quantum phenomena, for instance, the topology. The formation of topologically non-trivial states is related to crystalline symmetry, spin-orbit coupling, and magnetic ordering. Here, we demonstrate how lattic…
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Transition metal oxides with a wide variety of electronic and magnetic properties offer an extraordinary possibility to be a platform for develo** future electronics based on unconventional quantum phenomena, for instance, the topology. The formation of topologically non-trivial states is related to crystalline symmetry, spin-orbit coupling, and magnetic ordering. Here, we demonstrate how lattice distortions and octahedral rotation in SrNbO$_3$ films induce the band topology. By employing angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations, we verify the presence of in-phase $a^0a^0c^+$ octahedral rotation in ultra-thin SrNbO$_3$ films, which causes the formation of topologically-protected Dirac band crossings. Our study illustrates that octahedral engineering can be effectively exploited for implanting and controlling quantum topological phases in transition metal oxides.
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Submitted 10 November, 2023;
originally announced November 2023.
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Microscopic study of the impurity effect in the kagome superconductor La(Ru$_{1-x}$Fe$_{x}$)$_{3}$Si$_{2}$
Authors:
C. Mielke III,
D. Das,
J. Spring,
H. Nakamura,
S. Shin,
H. Liu,
V. Sazgari,
S. Joehr,
J. Lyu,
J. N. Graham,
T. Shiroka,
M. Medarde,
M. Z. Hasan,
S. Nakatsuji,
R. Khasanov,
D. J. Gawryluk,
H. Luetkens,
Z. Guguchia
Abstract:
We report on the effect of magnetic impurities on the microscopic superconducting (SC) properties of the kagome-lattice superconductor La(Ru$_{1-x}$Fe$_{x}$)$_{3}$Si$_{2}$ using muon spin relaxation/rotation. A strong suppression of the superconducting critical temperature $T_{\rm c}$, the SC volume fraction, and the superfluid density was observed. We further find a correlation between the superf…
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We report on the effect of magnetic impurities on the microscopic superconducting (SC) properties of the kagome-lattice superconductor La(Ru$_{1-x}$Fe$_{x}$)$_{3}$Si$_{2}$ using muon spin relaxation/rotation. A strong suppression of the superconducting critical temperature $T_{\rm c}$, the SC volume fraction, and the superfluid density was observed. We further find a correlation between the superfluid density and $T_{\rm c}$ which is considered a hallmark feature of unconventional superconductivity. Most remarkably, measurements of the temperature-dependent magnetic penetration depth $λ$ reveal a change in the low-temperature behavior from exponential saturation to a linear increase, which indicates that Fe do** introduces nodes in the superconducting gap structure at concentrations as low as $x=$~0.015. Our results point to a rare example of unconventional superconductivity in the correlated kagome lattice and accessible tunability of the superconducting gap structure, offering new insights into the microscopic mechanisms involved in superconducting order.
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Submitted 3 April, 2024; v1 submitted 14 September, 2023;
originally announced September 2023.
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Efficient Quantum Work Reservoirs at the Nanoscale
Authors:
**ghao Lyu,
Alexander B. Boyd,
James P. Crutchfield
Abstract:
When reformulated as a resource theory, thermodynamics can analyze system behaviors in the single-shot regime. In this, the work required to implement state transitions is bounded by α-Renyi divergences and so differs in identifying efficient operations compared to stochastic thermodynamics. Thus, a detailed understanding of the difference between stochastic and resource-theoretic thermodynamics i…
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When reformulated as a resource theory, thermodynamics can analyze system behaviors in the single-shot regime. In this, the work required to implement state transitions is bounded by α-Renyi divergences and so differs in identifying efficient operations compared to stochastic thermodynamics. Thus, a detailed understanding of the difference between stochastic and resource-theoretic thermodynamics is needed. To this end, we explore reversibility in the single-shot regime, generalizing the two-level work reservoirs used there to multi-level work reservoirs. This achieves reversibility in any transition in the single-shot regime. Building on this, we systematically develop multi-level work reservoirs in the nondissipation regime with and without catalysts. The resource-theoretic results show that two-level work reservoirs undershoot Landauer's bound, misleadingly implying energy dissipation during computation. In contrast, we demonstrate that multilevel work reservoirs achieve Landauer's bound while producing arbitrarily low entropy.
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Submitted 22 June, 2024; v1 submitted 28 May, 2023;
originally announced May 2023.
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Gate-tuned ambipolar superconductivity with strong pairing interaction in intrinsic gapped monolayer 1T'-MoTe2
Authors:
Fangdong Tang,
Peipei Wang,
Yuan Gan,
Jian lyu,
Qixing Wang,
Xinrun Mi,
Mingquan He,
Liyuan Zhang,
Jurgen H. Smet
Abstract:
Gate tunable two-dimensional (2D) superconductors offer significant advantages when studying superconducting phase transitions. Here, we address superconductivity in exfoliated 1T'-MoTe2 monolayers with an intrinsic band gap of ~7.3 meV using electrostatic do**. Despite large differences in the dispersion of the conduction and the valence bands, superconductivity can be achieved easily for both…
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Gate tunable two-dimensional (2D) superconductors offer significant advantages when studying superconducting phase transitions. Here, we address superconductivity in exfoliated 1T'-MoTe2 monolayers with an intrinsic band gap of ~7.3 meV using electrostatic do**. Despite large differences in the dispersion of the conduction and the valence bands, superconductivity can be achieved easily for both electrons and holes. The onset of superconductivity occurs near 7-8K for both charge carrier types. This temperature is much higher than in bulk samples. Also the in-plane upper critical field is strongly enhanced and exceeds the BCS Pauli limit in both cases. Gap information is extracted using point-contact spectroscopy. The gap ratio exceeds multiple times the value expected for BCS weak-coupling. All these observations suggest a strong enhancement of the pairing interaction.
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Submitted 27 February, 2023;
originally announced February 2023.
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Proximity-induced quasi-one-dimensional superconducting quantum anomalous Hall state: a promising scalable top-down approach towards localized Majorana modes
Authors:
Omargeldi Atanov,
Wai Ting Tai,
Ying-Ming Xie,
Yat Hei Ng,
Molly A. Hammond,
Tin Seng Manfred Ho,
Tsin Hei Koo,
Hui Li,
Sui Lun Ho,
Jian Lyu,
Sukong Chong,
Peng Zhang,
Lixuan Tai,
Jiannong Wang,
Kam Tuen Law,
Kang L. Wang,
Rolf Lortz
Abstract:
In this work, ~100 nm wide quantum anomalous Hall insulator (QAHI) nanoribbons are etched from a two-dimensional QAHI film. One part of the nanoribbon is covered with superconducting Nb, while the other part is connected to an Au lead via two-dimensional QAHI regions. Andreev reflection spectroscopy measurements were performed, and multiple in-gap conductance peaks were observed in three different…
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In this work, ~100 nm wide quantum anomalous Hall insulator (QAHI) nanoribbons are etched from a two-dimensional QAHI film. One part of the nanoribbon is covered with superconducting Nb, while the other part is connected to an Au lead via two-dimensional QAHI regions. Andreev reflection spectroscopy measurements were performed, and multiple in-gap conductance peaks were observed in three different devices. In the presence of an increasing magnetic field perpendicular to the QAHI film, the multiple in-gap peak structure evolves into a single zero-bias conductance peak (ZBCP). Theoretical simulations suggest that the measurements are consistent with the scenario that the increasing magnetic field drives the nanoribbons from a multi-channel occupied regime to a single channel occupied regime, and that the ZBCP may be induced by zero energy Majorana modes as previously predicted [24]. Although further experiments are needed to clarify the nature of the ZBCP, we provide initial evidence that quasi-1D QAHI nanoribbon/superconductor heterostructures are new and promising platforms for realizing zero-energy Majorana modes.
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Submitted 13 February, 2023;
originally announced February 2023.
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Structural Evolution and Onset of the Density Wave Transition in the CDW Superconductor LaPt$_2$Si$_2$ Clarified with Synchrotron XRD
Authors:
Elisabetta Nocerino,
Irene San Lorenzo,
Konstantinos Papadopulos,
Marisa Medarde,
Jike Lyu,
Yannick Maximilian Klein,
Arianna Minelli,
Zakir Hossain,
Arumugam Thamizhavel,
Kim Lefmann,
Oleh Ivashko,
Martin von Zimmermann,
Yasmine Sassa,
Martin Månsson
Abstract:
The quasi-2D Pt-based rare earth intermetallic material LaPt$_2$Si$_2$ has attracted attention as it exhibits strong interplay between charge density wave (CDW) and and superconductivity (SC). However, the most of the results reported on this material come from theoretical calculations, preliminary bulk investigations and powder samples, which makes it difficult to uniquely determine the temperatu…
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The quasi-2D Pt-based rare earth intermetallic material LaPt$_2$Si$_2$ has attracted attention as it exhibits strong interplay between charge density wave (CDW) and and superconductivity (SC). However, the most of the results reported on this material come from theoretical calculations, preliminary bulk investigations and powder samples, which makes it difficult to uniquely determine the temperature evolution of its crystal structure and, consequently, of its CDW transition. Therefore, the published literature around LaPt$_2$Si$_2$ is often controversial. In this paper, we clarify the complex evolution of the crystal structure, and the temperature dependence of the development of density wave transitions, in good quality LaPt$_2$Si$_2$ single crystals, with high resolution synchrotron X-ray diffraction data. According to our findings, on cooling from room temperature LaPt$_2$Si$_2$ undergoes a series of subtle structural transitions which can be summarised as follows: second order commensurate tetragonal ($P4/nmm$)-to-incommensurate structure followed by a first order incommensurate-to-commensurate orthorhombic ($Pmmn$) transition and then a first order commensurate orthorhombic ($Pmmn$)-to-commensurate tetragonal ($P4/nmm$). The structural transitions are accompanied by both incommensurate and commensurate superstructural distortions of the lattice. The observed behavior is compatible with discommensuration of the CDW in this material.
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Submitted 29 November, 2022; v1 submitted 22 November, 2022;
originally announced November 2022.
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Classical-quantum correspondence of special and extraordinary-log criticality: Villain's bridge
Authors:
Yanan Sun,
** Lyu,
Jian-** Lv
Abstract:
There has been much recent progress on exotic surface critical behavior, yet the classical-quantum correspondence of special and extraordinary-log criticality remains largely unclear. Employing worm Monte Carlo simulations, we explore the surface criticality at an emergent superfluid-Mott insulator critical point in the Villain representation, which is believed to connect classical and quantum O(2…
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There has been much recent progress on exotic surface critical behavior, yet the classical-quantum correspondence of special and extraordinary-log criticality remains largely unclear. Employing worm Monte Carlo simulations, we explore the surface criticality at an emergent superfluid-Mott insulator critical point in the Villain representation, which is believed to connect classical and quantum O(2) critical systems. We observe a special transition with the thermal and magnetic renormalization exponents $y_t=0.58(1)$ and $y_h=1.690(1)$ respectively, which are close to recent estimates from models with discrete spin variables. The existence of extraordinary-log universality is evidenced by the critical exponent $\hat{q}=0.58(2)$ from two-point correlation and the renormalization-group parameter $α=0.28(1)$ from superfluid stiffness, which obey the scaling relation of extraordinary-log critical theory and recover the logarithmic finite-size scaling of critical superfluid stiffness in open-edge quantum Bose-Hubbard model. Our results bridge recent observations of surface critical behavior in the classical statistical mechanical models [Parisen Toldin, Phys. Rev. Lett. 126, 135701 (2021); Hu $et$ $al.$, $ibid.$ 127, 120603 (2021); Parisen Toldin $et$ $al.$, $ibid.$ 128, 215701 (2022)] and the open-edge quantum Bose-Hubbard model [Sun $et$ $al.$, Phys. Rev. B 106, 224502 (2022)].
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Submitted 2 December, 2022; v1 submitted 21 November, 2022;
originally announced November 2022.
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Weak ferromagnetism linked to the high-temperature spiral phase of YBaCuFeO5
Authors:
J. Lyu,
M. Morin,
T. Shang,
M. T. Fernandez-Diaz,
M. Medarde
Abstract:
The layered perovskite YBaCuFeO5 is a rare example of cycloidal spiral magnet whose ordering temperature Tspiral can be tuned far beyond room temperature by adjusting the degree of Cu2+/Fe3+ chemical disorder in the structure. This unusual property qualifies this material as one of the most promising spin-driven multiferroic candidates. However, very little is known about the response of the spira…
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The layered perovskite YBaCuFeO5 is a rare example of cycloidal spiral magnet whose ordering temperature Tspiral can be tuned far beyond room temperature by adjusting the degree of Cu2+/Fe3+ chemical disorder in the structure. This unusual property qualifies this material as one of the most promising spin-driven multiferroic candidates. However, very little is known about the response of the spiral to magnetic fields, crucial for magnetoelectric cross-control applications. Using bulk magnetization and neutron powder diffraction measurements under magnetic fields up to 9 T we report here the first temperature-magnetic field phase diagram of this material. Besides revealing a strong stability of the spiral state, our data uncover the presence of weak ferromagnetism coexisting with the spiral modulation. Since ferromagnets can be easily manipulated with magnetic fields, this observation opens new perspectives for the control of the spiral orientation, directly linked to the polarization direction, as well as for a possible future use of this material in technological applications.
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Submitted 22 March, 2022;
originally announced March 2022.
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Dynamics of pearling instability in polymersomes: the role of shear membraneviscosity and spontaneous curvature
Authors:
J. Lyu,
K. Xie,
R. Chachanidze,
A. Kahli,
G. Boedec,
M. Leonetti
Abstract:
The stability of copolymer tethers is investigated theoretically. Self-assembly of diblockor triblock copolymers can lead to tubular polymersomes which are known experimentallyto undergo shape instability under thermal, chemical and tension stresses. It leads to aperiodic modulation of the radius which evolves to assembly-line pearls connected by tinytethers. We study the contributions of shear su…
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The stability of copolymer tethers is investigated theoretically. Self-assembly of diblockor triblock copolymers can lead to tubular polymersomes which are known experimentallyto undergo shape instability under thermal, chemical and tension stresses. It leads to aperiodic modulation of the radius which evolves to assembly-line pearls connected by tinytethers. We study the contributions of shear surface viscosity and spontaneous curvatureand their interplay to understand the pearling instability. The performed linear analysisof stability of this cylinder-to-pearls transition shows that such systems are unstable if themembrane tension is larger than a finite critical value contrary to the Rayleigh-Plateau in-stability, an already known or if the spontaneous curvature is in a specific range whichdepends on membrane tension. For the case of spontaneous curvature-induced shape insta-bility, two dynamical modes are identified. The first one is analog to the tension-inducedinstability with a marginal mode. Its wavenumber associated to the most unstable modedecreases continuously to zero as membrane viscosity increases. The unexpected secondone has a finite range of unstable wavenumbers. The wavenumber of the most unstablemode tends to a constant as membrane viscosity increases. In this mode, its growth ratebecomes independent of the bulk viscosity in the limit of high membrane viscosity andbehaves as a pure viscous surface.
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Submitted 13 October, 2021;
originally announced October 2021.
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Swirling and snaking, 3D oscillatory bifurcations of vesicle dynamics in microcirculation
Authors:
**ming Lyu,
Paul G. Chen,
Alexander Farutin,
Marc Jaeger,
Chaouqi Misbah,
and Marc Leonetti
Abstract:
Vesicles are soft elastic bodies with distinctive mechanical properties such as bending resistance, membrane fluidity, and their strong ability to deform, mimicking some properties of biological cells. While previous three-dimensional (3D) studies have identified stationary shapes such as slipper and axisymmetric ones, we report a complete phase diagram of 3D vesicle dynamics in a bounded Poiseuil…
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Vesicles are soft elastic bodies with distinctive mechanical properties such as bending resistance, membrane fluidity, and their strong ability to deform, mimicking some properties of biological cells. While previous three-dimensional (3D) studies have identified stationary shapes such as slipper and axisymmetric ones, we report a complete phase diagram of 3D vesicle dynamics in a bounded Poiseuille flow with two more oscillatory dynamics, 3D snaking and swirling. 3D snaking is characterized by planar oscillatory motion of the mass center and shape deformations, which is unstable and leads to swirling or slipper. Swirling emerges from supercritical pitchfork bifurcation. The mass center moves along a helix, the preserved shape rolls on itself and spins around the flow direction. Swirling can coexist with slipper.
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Submitted 16 June, 2021;
originally announced June 2021.
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Superconductivity beyond Pauli's limit in bulk NbS2: Evidence for the Fulde-Ferrell-Larkin-Ovchinnikov state
Authors:
Chang-woo Cho,
Jian Lyu,
Cheuk Yin Ng,
James Jun He,
Tarob A. Abdel-Baset,
Mahmoud Abdel-Hafiez,
Rolf Lortz
Abstract:
We present magnetic torque, specific heat and thermal expansion measurements combined with a piezo rotary positioner of the bulk transition metal dichalcogenide (TMD) superconductor NbS2 in high magnetic fields applied strictly parallel to its layer structure. The upper critical field of superconducting TMDs in the 2D form is known to be dramatically enhanced by a special form of Ising spin orbit…
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We present magnetic torque, specific heat and thermal expansion measurements combined with a piezo rotary positioner of the bulk transition metal dichalcogenide (TMD) superconductor NbS2 in high magnetic fields applied strictly parallel to its layer structure. The upper critical field of superconducting TMDs in the 2D form is known to be dramatically enhanced by a special form of Ising spin orbit coupling. This Ising superconductivity is very robust against the Pauli limit for superconductivity. We find that superconductivity beyond the Pauli limit still exists in bulk single crystals of NbS2. However, the comparison of our upper critical field transition line with numerical simulations rather points to the development of a Fulde-Ferrell-Larkin-Ovchinnikov state above the Pauli limit as a cause. This is also consistent with the observation of a magnetic field driven phase transition in the thermodynamic quantities within the superconducting state near the Pauli limit.
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Submitted 9 November, 2020;
originally announced November 2020.
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Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films
Authors:
Jike Lyu,
Ignasi Fina,
Florencio Sanchez
Abstract:
The growth window of epitaxial Hf0.5Zr0.5O2 is established taking into account the main ferroelectric properties that films have to present simultaneously: high remanent polarization, low fatigue and long retention. Defects in the film and imprint field depend on deposition temperature and oxygen pressure, with an impact on fatigue and retention, respectively. Fatigue increases with substrate temp…
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The growth window of epitaxial Hf0.5Zr0.5O2 is established taking into account the main ferroelectric properties that films have to present simultaneously: high remanent polarization, low fatigue and long retention. Defects in the film and imprint field depend on deposition temperature and oxygen pressure, with an impact on fatigue and retention, respectively. Fatigue increases with substrate temperature and pressure, and retention is short if low temperature is used. The growth window of epitaxial stabilization of ferroelectric Hf0.5Zr0.5O2 is narrower when all major ferroelectric properties (remanence, endurance and retention) are considered, but deposition temperature and pressure ranges are still sufficiently wide.
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Submitted 17 August, 2020;
originally announced August 2020.
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Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions
Authors:
Milena Cervo Sulzbach,
Saúl Estandía,
Xiao Long,
Jike Lyu,
Nico Dix,
Jaume Gàzquez,
Matthew F. Chisholm,
Florencio Sánchez,
Ignasi Fina,
Josep Fontcuberta
Abstract:
Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect-related…
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Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect-related transport mechanisms. Here is shown the fundamental role of the microstructure of HZO films setting the balance between those contributions. The oxide film presents coherent or incoherent grain boundaries, associated to the existence of monoclinic and orthorhombic phases in HZO films, which are dictated by the mismatch with the substrates for epitaxial growth. These grain boundaries are the toggle that allows to obtain either large (up to 450 %) and fully reversible genuine polarization controlled electroresistance when only the orthorhombic phase is present or an irreversible and extremely large (1000-100000 %) electroresistance when both phases coexist.
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Submitted 12 June, 2020;
originally announced June 2020.
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High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films
Authors:
Jike Lyu,
Tingfeng Song,
Ignasi Fina,
Florencio Sánchez
Abstract:
Ferroelectric HfO$_2$ is a promising material for new memory devices, but significant improvement of important properties is necessary to reach applications. However, precedent literature shows that a dilemma between polarization, endurance and retention exists. Since all these properties should be simultaneously high, overcoming this issue is of the highest relevance. Here, we demonstrate that hi…
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Ferroelectric HfO$_2$ is a promising material for new memory devices, but significant improvement of important properties is necessary to reach applications. However, precedent literature shows that a dilemma between polarization, endurance and retention exists. Since all these properties should be simultaneously high, overcoming this issue is of the highest relevance. Here, we demonstrate that high crystalline quality sub-5 nm Hf0.5Zr0.5O2 capacitors, integrated epitaxially with Si(001), present combined high polarization (2Pr of 27 uC/cm2 in the pristine state), endurance (2Pr > 6 uC/cm2 after E11 cycles) and retention (2Pr > 12 uC/cm2 extrapolated at 10 years) using same poling conditions (2.5 V). This achievement is demonstrated in films thinner than 5 nm, thus opening bright possibilities in ferroelectric tunnel junctions and other devices.
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Submitted 29 May, 2020;
originally announced May 2020.
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Nodal and nematic superconducting phases in NbSe2 monolayers from competing superconducting channels
Authors:
Chang-woo Cho,
Jian Lyu,
Liheng An,
Tianyi Han,
Kwan To Lo,
Cheuk Yin Ng,
Jiaqi Hu,
Yuxiang Gao,
Gaomin Li,
Mingyuan Huang,
Ning Wang,
Jörg Schmalian,
Rolf Lortz
Abstract:
Transition metal dichalcogenides like 2H-NbSe2 in their two-dimensional (2D) form exhibit Ising superconductivity with the quasiparticle spins are firmly pinned in the direction perpendicular to the basal plane. This enables them to withstand exceptionally high magnetic fields beyond the Pauli limit for superconductivity. Using field-angle-resolved magnetoresistance experiments for fields rotated…
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Transition metal dichalcogenides like 2H-NbSe2 in their two-dimensional (2D) form exhibit Ising superconductivity with the quasiparticle spins are firmly pinned in the direction perpendicular to the basal plane. This enables them to withstand exceptionally high magnetic fields beyond the Pauli limit for superconductivity. Using field-angle-resolved magnetoresistance experiments for fields rotated in the basal plane we investigate the field-angle dependence of the upper critical field (Hc2), which directly reflects the symmetry of the superconducting order parameter. We observe a six-fold nodal symmetry superposed on a two-fold symmetry. This agrees with theoretical predictions of a nodal topological superconducting phase near Hc2, together with a nematic superconducting state. We demonstrate that in NbSe2 such unconventional superconducting states can arise from the presence of several competing superconducting channels.
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Submitted 15 February, 2022; v1 submitted 27 March, 2020;
originally announced March 2020.
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Shape transition and hydrodynamics of vesicles in tube flow
Authors:
Paul G. Chen,
J. M. Lyu,
M. Jaeger,
M. Leonetti
Abstract:
The steady motion and deformation of a lipid-bilayer vesicle translating through a circular tube in low Reynolds number pressure-driven flow are investigated numerically using an axisymmetric boundary element method. This fluid-structure interaction problem is determined by three dimensionless parameters: reduced volume (a measure of the vesicle asphericity), geometric confinement (the ratio of th…
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The steady motion and deformation of a lipid-bilayer vesicle translating through a circular tube in low Reynolds number pressure-driven flow are investigated numerically using an axisymmetric boundary element method. This fluid-structure interaction problem is determined by three dimensionless parameters: reduced volume (a measure of the vesicle asphericity), geometric confinement (the ratio of the vesicle effective radius to the tube radius), and capillary number (the ratio of viscous to bending forces). The physical constraints of a vesicle -- fixed surface area and enclosed volume when it is confined in a tube -- determine critical confinement beyond which it cannot pass through without rupturing its membrane. The simulated results are presented in a wide range of reduced volumes [0.6, 0.98] for different degrees of confinement; the reduced volume of 0.6 mimics red blood cells. We draw a phase diagram of vesicle shapes and propose a shape transition line separating the parachute-like shape region from the bullet-like one in the reduced volume versus confinement phase space. We show that the shape transition marks a change in the behavior of vesicle mobility, especially for highly deflated vesicles. Most importantly, high-resolution simulations make it possible for us to examine the hydrodynamic interaction between the wall boundary and the vesicle surface at conditions of very high confinement, thus providing the limiting behavior of several quantities of interest, such as the thickness of lubrication film, vesicle mobility and its length, and the extra pressure drop due to the presence of the vesicle. This extra pressure drop holds implications for the rheology of dilute vesicle suspensions. Furthermore, we present various correlations and discuss a number of practical applications.
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Submitted 12 March, 2020; v1 submitted 14 December, 2019;
originally announced December 2019.
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Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress
Authors:
Saul Estandia,
Nico Dix,
Jaume Gazquez,
Ignasi Fina,
Jike Lyu,
Matthew F. Chisholm,
Josep Fontcuberta,
Florencio Sanchez
Abstract:
The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 and La0.67Sr0.33MnO3 electrodes were grown on a set of single crystalline oxide 001-oriented, cubic or pseudocubic setting, substrates with lattice parameter in the 3.71 - 4.21 A range. The lattice strain of the La0.67Sr0.33MnO3 electrode, det…
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The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 and La0.67Sr0.33MnO3 electrodes were grown on a set of single crystalline oxide 001-oriented, cubic or pseudocubic setting, substrates with lattice parameter in the 3.71 - 4.21 A range. The lattice strain of the La0.67Sr0.33MnO3 electrode, determined by the lattice mismatch with the substrate, is critical in the stabilization of the orthorhombic phase of Hf0.5Zr0.5O2. On La0.67Sr0.33MnO3 electrodes tensile strained most of the Hf0.5Zr0.5O2 film is orthorhombic, whereas the monoclinic phase is favored when La0.67Sr0.33MnO3 is relaxed or compressively strained. Therefore, the Hf0.5Zr0.5O2 films on TbScO3 and GdScO3 substrates present substantially enhanced ferroelectric polarization in comparison to films on other substrates, including the commonly used SrTiO3. The capability of having epitaxial doped HfO2 films with controlled phase and polarization is of major interest for a better understanding of the ferroelectric properties and paves the way for fabrication of ferroelectric devices based on nanometric HfO2 films.
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Submitted 4 September, 2019;
originally announced September 2019.
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Contact transparency in mechanically assembled 2D material devices
Authors:
Scott Mills,
Naomi Mizuno,
Peng Wang,
Jian Lyu,
Kenji Watanabe,
Takashi Taniguchi,
Fernando Camino,
Liyuan Zhang,
Xu Du
Abstract:
Two-dimensional atomic crystals (2DACs) can be mechanically assembled with precision for the fabrication of heterostructures, allowing for the combination of material building blocks with great flexibility. In addition, while conventional nanolithography can be detrimental to most of the 2DACs which are not sufficiently inert, mechanical assembly potentially minimizes the nanofabrication processin…
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Two-dimensional atomic crystals (2DACs) can be mechanically assembled with precision for the fabrication of heterostructures, allowing for the combination of material building blocks with great flexibility. In addition, while conventional nanolithography can be detrimental to most of the 2DACs which are not sufficiently inert, mechanical assembly potentially minimizes the nanofabrication processing and preserves the intrinsic physical properties of the 2DACs. In this work we study the interfacial charge transport between various 2DACs and electrical contacts, by fabricating and characterizing 2DAC-superconductor junctions through mechanical transfer. Compared to devices fabricated with conventional nanolithography, mechanically assembled devices show comparable or better interface transparency. Surface roughness at the electrical contacts is identified to be a major limitation to the interface quality.
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Submitted 17 June, 2019;
originally announced June 2019.
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Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates
Authors:
J. Lyu,
I. Fina,
R. Bachelet,
G. Saint-Girons,
S. Estandia,
J. Gazquez,
J. Fontcuberta,
F. Sanchez
Abstract:
SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced properties in comparison to equivalent films on SrTiO3(001) single crystalline substrates. The films, thinner than 10 nm, have very high remnant polarization of 34 uC/cm2. Hf0.5Zr0.5O2 capacitors at operating voltage of 4…
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SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced properties in comparison to equivalent films on SrTiO3(001) single crystalline substrates. The films, thinner than 10 nm, have very high remnant polarization of 34 uC/cm2. Hf0.5Zr0.5O2 capacitors at operating voltage of 4 V present long retention time well beyond 10 years and high endurance against fatigue up to 109 cycles. The robust ferroelectric properties displayed by the epitaxial Hf0.5Zr0.5O2 films on Si(001) using SrTiO3 templates paves the way for the monolithic integration on silicon of emerging memory devices based on epitaxial HfO2.
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Submitted 5 June, 2019;
originally announced June 2019.
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$Z_3$-vestigial nematic order due to superconducting fluctuations in the doped topological insulator Nb$_x$Bi$_2$Se$_3$ and Cu$_x$Bi$_2$Se$_3$
Authors:
Chang-woo Cho,
Junying Shen,
Jian Lyu,
Omargeldi Atanov,
Qianxue Chen,
Seng Huat Lee,
Yew San Hor,
Dariusz Jakub Gawryluk,
Ekaterina Pomjakushina,
Marek Bartkowiak,
Matthias Hecker,
Jörg Schmalian,
Rolf Lortz
Abstract:
A state of matter with a multi-component order parameter can give rise to vestigial order. In the vestigial phase, the primary order is only partially melted, leaving a remaining symmetry breaking behind, an effect driven by strong classical or quantum fluctuations. Vestigial states due to primary spin and charge-density-wave order have been discussed in the context of iron-based and cuprate mater…
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A state of matter with a multi-component order parameter can give rise to vestigial order. In the vestigial phase, the primary order is only partially melted, leaving a remaining symmetry breaking behind, an effect driven by strong classical or quantum fluctuations. Vestigial states due to primary spin and charge-density-wave order have been discussed in the context of iron-based and cuprate materials. Here we present the observation of a partially melted superconductor in which pairing fluctuations condense at a separate phase transition and form a nematic state with broken Z3, i.e. three-state Potts-model symmetry. High-resolution thermal expansion, specific heat and magnetization measurements of the doped topological insulator NbxBi2Se3 reveal that this symmetry breaking occurs at Tnem=3.8 K above Tc=3.25 K, along with an onset of superconducting fluctuations. Thus, before Cooper pairs establish long-range coherence at Tc, they fluctuate in a way that breaks the rotational invariance at Tnem and induces a distortion of the crystalline lattice. Similar results are found for CuxBi2Se3.
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Submitted 25 March, 2020; v1 submitted 5 May, 2019;
originally announced May 2019.
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Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films
Authors:
Jike Lyu,
Ignasi Fina,
Raul Solanas,
Josep Fontcuberta,
Florencio Sánchez
Abstract:
The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas in epitaxial films, its formation has been much less investigated. We have grown Hf0.5Zr0.5O2 films by pulsed laser deposition, and the growth window (temperature and oxygen pressure during deposition and film thickness) for epitaxial stabilization of the ferroelectric phase is mapped. The remnant f…
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The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas in epitaxial films, its formation has been much less investigated. We have grown Hf0.5Zr0.5O2 films by pulsed laser deposition, and the growth window (temperature and oxygen pressure during deposition and film thickness) for epitaxial stabilization of the ferroelectric phase is mapped. The remnant ferroelectric polarization, up to around 24 uC/cm2, depends on the amount of orthorhombic phase and interplanar spacing and increases with temperature and pressure for a fixed film thickness. The leakage current decreases with an increase in thickness or temperature, or when decreasing oxygen pressure. The coercive electric field (EC) depends on thickness (t) according to the coercive electric field (Ec) - thickness (t)-2/3 scaling, which is observed for the first time in ferroelectric hafnia, and the scaling extends to thicknesses down to around 5 nm. The proven ability to tailor the functional properties of high-quality epitaxial ferroelectric Hf0.5Zr0.5O2 films paves the way toward understanding their ferroelectric properties and prototy** devices.
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Submitted 27 February, 2019;
originally announced February 2019.
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Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance
Authors:
Jike Lyu,
Ignasi Fina,
Josep Fontcuberta,
Florencio Sánchez
Abstract:
Epitaxial ferroelectric Hf0.5Zr0.5O2 films have been successfully integrated in a capacitor heterostructure on Si(001). The orthorhombic Hf0.5Zr0.5O2 phase, [111] out-of-plane oriented, is stabilized in the films. The films present high remnant polarization Pr close to 20 μC/cm2, rivaling with equivalent epitaxial films on single crystalline oxide substrates. Retention time is longer than 10 years…
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Epitaxial ferroelectric Hf0.5Zr0.5O2 films have been successfully integrated in a capacitor heterostructure on Si(001). The orthorhombic Hf0.5Zr0.5O2 phase, [111] out-of-plane oriented, is stabilized in the films. The films present high remnant polarization Pr close to 20 μC/cm2, rivaling with equivalent epitaxial films on single crystalline oxide substrates. Retention time is longer than 10 years for writing field of around 5 MV/cm, and the capacitors show endurance up to 1E9 cycles for writing voltage of around 4 MV/cm. It is found that the formation of the orthorhombic ferroelectric phase depends critically on the bottom electrode, being achieved on La0.67Sr0.33MnO3 but not on LaNiO3. The demonstration of excellent ferroelectric properties in epitaxial films of Hf0.5Zr0.5O2 on Si(001) is relevant towards fabrication of devices that require homogeneity in the nanometer scale, as well as for better understanding of the intrinsic properties of this promising ferroelectric oxide.
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Submitted 14 February, 2019;
originally announced February 2019.
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Spectroscopic Fingerprint of Chiral Majorana Modes at the Edge of a Quantum Anomalous Hall Insulator / Superconductor Heterostructure
Authors:
J. Shen,
J. Lyu,
J. Z. Gao,
Y. -M. Xie,
C. -Z. Chen,
C. -w. Cho,
O. Atanov,
Z. Chen,
K. Liu,
Y. J. Hu,
K. Y. Yip,
S. K. Goh,
Q. L. He,
L. Pan,
K. L. Wang,
K. T. Law,
R. Lortz
Abstract:
With the recent discovery of the quantum anomalous Hall insulator (QAHI), which exhibits the conductive quantum Hall edge states without external magnetic field, it becomes possible to create a novel topological superconductor (SC) by introducing superconductivity into these edge states. In this case, two distinct topological superconducting phases with one or two chiral Majorana edge modes were t…
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With the recent discovery of the quantum anomalous Hall insulator (QAHI), which exhibits the conductive quantum Hall edge states without external magnetic field, it becomes possible to create a novel topological superconductor (SC) by introducing superconductivity into these edge states. In this case, two distinct topological superconducting phases with one or two chiral Majorana edge modes were theoretically predicted, characterized by Chern numbers (N ) of 1 and 2, respectively. We present spectroscopic evidence from Andreev reflection experiments for the presence of chiral Majorana modes in a Nb / (Cr0.12Bi0.26Sb0.62)2Te3 heterostructure with distinct signatures attributed to two different topological superconducting phases. The results are in qualitatively good agreement with the theoretical predictions.
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Submitted 31 October, 2019; v1 submitted 12 September, 2018;
originally announced September 2018.
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Tailoring Lattice Strain and Ferroelectric Polarization of Epitaxial BaTiO3 Thin Films on Si(001)
Authors:
Jike Lyu,
Ignasi Fina,
Raul Solanas,
Josep Fontcuberta,
Florencio Sanchez
Abstract:
Ferroelectric BaTiO3 films with large polarization have been integrated with Si(001) by pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate temperature range of about 300 deg C wide. The deposition temperature critically affects the growth kinetics and thermodynamics balance, resulting on a high impact in the strain of the BaTiO3 polar axis, which can excee…
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Ferroelectric BaTiO3 films with large polarization have been integrated with Si(001) by pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate temperature range of about 300 deg C wide. The deposition temperature critically affects the growth kinetics and thermodynamics balance, resulting on a high impact in the strain of the BaTiO3 polar axis, which can exceed 2% in films thicker than 100 nm. The ferroelectric polarization scales with the strain and therefore deposition temperature can be used as an efficient tool to tailor ferroelectric polarization. The developed strategy overcomes the main limitations of the conventional strain engineering methodologies based on substrate selection: it can be applied to films on specific substrates including Si(001) and perovskites, and it is not restricted to ultrathin films.
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Submitted 24 January, 2018;
originally announced January 2018.
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On the $^{12}$C/$^{13}$C carbon isotope effect in the quasi one-dimensional superconductor Sc$_3$CoC$_4$
Authors:
Christof D. Haas,
Georg Eickerling,
Ernst-Wilhelm Scheidt,
Dominik Schmitz,
Jan Langmann,
Jian Lyu,
Junying Shen,
Rolf Lortz,
Daniel Eklöf,
Jan Gerrit Schiffmann,
Leo van Wüllen,
Anton Jesche,
Wolfgang Scherer
Abstract:
Sc$_3$CoC$_4$ is the only superconductor in the group of the isotypic carbides Sc$_3M$C$_4$ ($M$ = Mn, Fe, Ru, Os, Co, Rh, Ir, Ni), rendering it into an ideal benchmark system to systematically study the prerequisites and mechanism of superconductivity in such quasi one-dimensional structures. To investigate the isotope effect, the substitution series Sc$_3$Co($^{12}$C$_{1-x}$$^{13}$C$_x$)$_4$ wit…
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Sc$_3$CoC$_4$ is the only superconductor in the group of the isotypic carbides Sc$_3M$C$_4$ ($M$ = Mn, Fe, Ru, Os, Co, Rh, Ir, Ni), rendering it into an ideal benchmark system to systematically study the prerequisites and mechanism of superconductivity in such quasi one-dimensional structures. To investigate the isotope effect, the substitution series Sc$_3$Co($^{12}$C$_{1-x}$$^{13}$C$_x$)$_4$ with $x$ = 0, 0.5 and 1 was synthesized by arc melting. The sample homogeneity was confirmed by powder X-ray diffraction and NMR spectroscopy. The resulting isotope coefficient based on magnetization studies on polycrystalline samples and electrical resistivity measurements on single crystals of $α$ = 0.58 lies close to the value of 0.5 predicted by BCS theory.
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Submitted 9 November, 2018; v1 submitted 15 December, 2017;
originally announced December 2017.
