Controlling spin-orbit coupling to tailor type-II Dirac bands
Authors:
Nguyen Huu Lam,
Phuong Lien Nguyen,
Byoung Ki Choi,
Trinh Thi Ly,
Ganbat Duvjir,
Tae Gyu Rhee,
Yong ** Jo,
Tae Heon Kim,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Younghun Hwang,
Young Jun Chang,
Jaekwang Lee,
Jungdae Kim
Abstract:
NiTe2, a type-II Dirac semimetal with strongly tilted Dirac band, has been explored extensively to understand its intriguing topological properties. Here, using density-functional theory (DFT) calculations, we report that the strength of spin-orbit coupling (SOC) in NiTe2 can be tuned by Se substitution. This results in negative shifts of the bulk Dirac point (BDP) while preserving the type-II Dir…
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NiTe2, a type-II Dirac semimetal with strongly tilted Dirac band, has been explored extensively to understand its intriguing topological properties. Here, using density-functional theory (DFT) calculations, we report that the strength of spin-orbit coupling (SOC) in NiTe2 can be tuned by Se substitution. This results in negative shifts of the bulk Dirac point (BDP) while preserving the type-II Dirac band. Indeed, combined studies using scanning tunneling spectroscopy (STS) and angle-resolved photoemission spectroscopy (ARPES) confirm that the BDP in the NiTe2-xSex alloy moves from +0.1 eV (NiTe2) to -0.3 eV (NiTeSe) depending on the Se concentrations, indicating the effective tunability of type-II Dirac fermions. Our results demonstrate an approach to tailor the type-II Dirac band in NiTe2 by controlling the SOC strength via chalcogen substitution. This approach can be applicable to different types of topological materials.
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Submitted 22 October, 2023;
originally announced October 2023.
Emergence of a Metal-Insulator Transition and High Temperature Charge Density Waves in VSe2 at the Monolayer Limit
Authors:
Ganbat Duvjir,
Byoung Ki Choi,
Iksu Jang,
Søren Ulstrup,
Soonmin Kang,
Trinh Thi Ly,
Sanghwa Kim,
Young Hwan Choi,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Je-Geun Park,
Raman Sankar,
Ki-Seok Kim,
Jungdae Kim,
Young Jun Chang
Abstract:
Emergent phenomena driven by electronic reconstructions in oxide heterostructures have been intensively discussed. However, the role of these phenomena in sha** the electronic properties in van der Waals heterointerfaces has hitherto not been established. By reducing the material thickness and forming a heterointerface, we find two types of charge-ordering transitions in monolayer VSe2 on graphe…
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Emergent phenomena driven by electronic reconstructions in oxide heterostructures have been intensively discussed. However, the role of these phenomena in sha** the electronic properties in van der Waals heterointerfaces has hitherto not been established. By reducing the material thickness and forming a heterointerface, we find two types of charge-ordering transitions in monolayer VSe2 on graphene substrates. Angle-resolved photoemission spectroscopy (ARPES) uncovers that Fermi-surface nesting becomes perfect in ML VSe2. Renormalization group analysis confirms that imperfect nesting in three dimensions universally flows into perfect nesting in two dimensions. As a result, the charge density wave transition temperature is dramatically enhanced to a value of 350 K compared to the 105 K in bulk VSe2. More interestingly, ARPES and scanning tunneling microscopy measurements confirm an unexpected metal-insulator transition at 135 K, driven by lattice distortions. The heterointerface plays an important role in driving this novel metal-insulator transition in the family of monolayered transition metal dichalcogenides.
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Submitted 9 August, 2018;
originally announced August 2018.
