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Utilizing Quantum Processor for the Analysis of Strongly Correlated Materials
Authors:
Hengyue Li,
Yusheng Yang,
Pin Lv,
**glong Qu,
Zhe-Hui Wang,
Jian Sun,
Shenggang Ying
Abstract:
This study introduces a systematic approach for analyzing strongly correlated systems by adapting the conventional quantum cluster method to a quantum circuit model. We have developed a more concise formula for calculating the cluster's Green's function, requiring only real-number computations on the quantum circuit instead of complex ones. This approach is inherently more suited to quantum circui…
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This study introduces a systematic approach for analyzing strongly correlated systems by adapting the conventional quantum cluster method to a quantum circuit model. We have developed a more concise formula for calculating the cluster's Green's function, requiring only real-number computations on the quantum circuit instead of complex ones. This approach is inherently more suited to quantum circuits, which primarily yield statistical probabilities. As an illustrative example, we explored the Hubbard model on a 2D lattice. The ground state is determined utilizing Xiaohong, a superconducting quantum processor equipped with 66 qubits, supplied by QuantumCTek Co., Ltd. Subsequently, we employed the circuit model to compute the real-time retarded Green's function for the cluster, which is then used to determine the lattice Green's function. We conducted an examination of the band structure in the insulator phase of the lattice system. This preliminary investigation lays the groundwork for exploring a wealth of innovative physics within the field of condensed matter physics.
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Submitted 3 April, 2024;
originally announced April 2024.
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Flexomagnetoelectric effect in Sr2IrO4 thin films
Authors:
Xin Liu,
Ting Hu,
Yujun Zhang,
Xueli Xu,
Biao Wu,
Zongwei Ma,
Peng Lv,
Yuelin Zhang,
Shih-Wen Huang,
Jialu Wu,
**g Ma,
Jiawang Hong,
Zhigao Sheng,
Chenglong Jia,
Erjun Kan,
Ce-Wen Nan,
**xing Zhang
Abstract:
Symmetry engineering is explicitly effective to manipulate and even create phases and orderings in strongly correlated materials. Flexural stress is universally practical to break the space-inversion or time-reversal symmetry. Here, by introducing strain gradient in a centrosymmetric antiferromagnet Sr2IrO4, the space-inversion symmetry is broken accompanying a non-equivalent O p-Ir d orbital hybr…
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Symmetry engineering is explicitly effective to manipulate and even create phases and orderings in strongly correlated materials. Flexural stress is universally practical to break the space-inversion or time-reversal symmetry. Here, by introducing strain gradient in a centrosymmetric antiferromagnet Sr2IrO4, the space-inversion symmetry is broken accompanying a non-equivalent O p-Ir d orbital hybridization along z axis. Thus, emergent polar phase and out-of-plane magnetic moment have been simultaneously observed in these asymmetric Sr2IrO4 thin films, which both are absent in its ground state. Furthermore, upon the application of magnetic field, such polarization can be controlled by modifying the occupied d orbitals through spin-orbit interaction, giving rise to a flexomagnetoelectric effect. This work provides a general strategy to artificially design multiple symmetries and ferroic orderings in strongly correlated systems.
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Submitted 9 January, 2024;
originally announced January 2024.
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Map** electrostatic potential in electrolyte solution
Authors:
Bo Huang,
Yining Yang,
Ruinong Han,
Keke Chen,
Zhiyuan Wang,
Longteng Yun,
Yian Wang,
Haowei Chen,
Yingchao Du,
Yuxia Hao,
Peng Lv,
Haoran Ma,
Pengju Ji,
Yuemei Tan,
Lianmin Zheng,
Lihong Liu,
Renkai Li,
Jie Yang
Abstract:
Map** the electrostatic potential (ESP) distribution around ions in electrolyte solution is crucial for the establishment of a microscopic understanding of electrolyte solution properties. For solutions in the bulk phase, it has not been possible to measure the ESP distribution on Angstrom scale. Here we show that liquid electron scattering experiment using state-of-the-art relativistic electron…
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Map** the electrostatic potential (ESP) distribution around ions in electrolyte solution is crucial for the establishment of a microscopic understanding of electrolyte solution properties. For solutions in the bulk phase, it has not been possible to measure the ESP distribution on Angstrom scale. Here we show that liquid electron scattering experiment using state-of-the-art relativistic electron beam can be used to measure the Debye screening length of aqueous LiCl, KCl, and KI solutions across a wide range of concentrations. We observe that the Debye screening length is long-ranged at low concentration and short-ranged at high concentration, providing key insight into the decades-long debate over whether the impact of ions in water is long-ranged or short-ranged. In addition, we show that the measured ESP can be used to retrieve the non-local dielectric function of electrolyte solution, which can serve as a promising route to investigate the electrostatic origin of special ion effects. Our observations show that, interaction, as one of the two fundamental perspectives for understanding electrolyte solution, can provide much richer information than structure.
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Submitted 1 February, 2024; v1 submitted 1 November, 2023;
originally announced November 2023.
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Ultra-high-density double-atom catalyst with spin moment as activity descriptor for oxygen reduction reaction
Authors:
Peng Lv,
Wen**g Lv,
Donghai Wu,
Gang Tang,
Xunwang Yan,
Zhansheng Lu,
Dongwei Ma
Abstract:
One of the great challenges facing atomically dispersed catalysts, including single-atom catalyst (SAC) and double-atom catalyst (DAC) is their ultra-low metal loading (typically less than 5 wt%), basically limiting the practical catalytic application, such as oxygen reduction reaction (ORR) crucial to hydrogen fuel cell and metal-air battery. Although some important progresses have been achieved…
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One of the great challenges facing atomically dispersed catalysts, including single-atom catalyst (SAC) and double-atom catalyst (DAC) is their ultra-low metal loading (typically less than 5 wt%), basically limiting the practical catalytic application, such as oxygen reduction reaction (ORR) crucial to hydrogen fuel cell and metal-air battery. Although some important progresses have been achieved on ultra-high-density (UHD) SACs, the reports on UHD-DACs with stable uniform dispersion is still lacking. Herein, based on the experimentally synthesized M2N6 motif (M = Sc-Zn), we theoretically demonstrated the existence of the UHD-DACs with the metal loading > 40 wt%, which were confirmed by systematic analysis of dynamic, thermal, mechanical, thermodynamic, and electrochemical stabilities. Furthermore, ORR activities of the UHD-DACs are comparable with or even better than those of the experimentally synthesized low-density (LD) counterparts, and the Fe2N6 and Co2N6 UHD-DACs locate at the peak of the activity volcano with ultra-low overpotentials of 0.31 and 0.33 V, respectively. Finally, spin magnetic moment of active center is found to be a catalytic descriptor for ORR on the DACs. Our work will stimulate the experimental exploration of the ultra-high-density DACs and provides the novel insight into the relationship between ORR activity of the DACs and their spin states.
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Submitted 4 May, 2023;
originally announced May 2023.
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Electronic properties and quantum transports in functionalized graphene Sierpinski carpet fractals
Authors:
Xiaotian Yang,
Weiqing Zhou,
Qi Yao,
Pengfei Lv,
Yunhua Wang,
Shengjun Yuan
Abstract:
Recent progress in controllable functionalization of graphene surfaces enables the experimental realization of complex functionalized graphene nanostructures, such as Sierpinski carpet (SC) fractals. Herein, we model the SC fractals formed by hydrogen and fluorine functionalized patterns on graphene surfaces, namely, H-SC and F-SC, respectively. We then reveal their electronic properties and quant…
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Recent progress in controllable functionalization of graphene surfaces enables the experimental realization of complex functionalized graphene nanostructures, such as Sierpinski carpet (SC) fractals. Herein, we model the SC fractals formed by hydrogen and fluorine functionalized patterns on graphene surfaces, namely, H-SC and F-SC, respectively. We then reveal their electronic properties and quantum transport features. From calculated results of the total and local density of state, we find that states in H-SC and F-SC have two characteristics: (i) low-energy states inside about |E/t|<1 (with t as the near-neighbor hop**) are localized inside free graphene regions due to the insulating properties of functionalized graphene regions, and (ii) high-energy states in F-SC have two special energy ranges including -2.3<E/t<-1.9 with localized holes only inside free graphene areas and 3<E/t<3.7 with localized electrons only inside fluorinated graphene areas. The two characteristics are further verified by the real-space distributions of normalized probability density. We analyze the fractal dimension of their quantum conductance spectra and find that conductance fluctuations in these structures follow the Hausdorff dimension. We calculate their optical conductivity and find that several additional conductivity peaks appear in high energy ranges due to the adsorbed H or F atoms.
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Submitted 19 May, 2022; v1 submitted 2 November, 2021;
originally announced November 2021.
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Evidence for anisotropic spin-triplet Andreev reflection at the 2D van der Waals ferromagnet/superconductor interface
Authors:
Ranran Cai,
Yunyan Yao,
Peng Lv,
Yang Ma,
Wenyu Xing,
Boning Li,
Yuan Ji,
Huibin Zhou,
Chenghao Shen,
Shuang Jia,
X. C. Xie,
Igor Zutic,
Qing-Feng Sun,
Wei Han
Abstract:
Fundamental symmetry breaking and relativistic spin-orbit coupling give rise to fascinating phenomena in quantum materials. Of particular interest are the interfaces between ferromagnets and common s-wave superconductors, where the emergent spin-orbit fields support elusive spin-triplet superconductivity, crucial for superconducting spintronics and topologically-protected Majorana bound states. He…
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Fundamental symmetry breaking and relativistic spin-orbit coupling give rise to fascinating phenomena in quantum materials. Of particular interest are the interfaces between ferromagnets and common s-wave superconductors, where the emergent spin-orbit fields support elusive spin-triplet superconductivity, crucial for superconducting spintronics and topologically-protected Majorana bound states. Here, we report the observation of large magnetoresistances at the interface between a quasi-two-dimensional van der Waals ferromagnet Fe0.29TaS2 and a conventional s-wave superconductor NbN, which provides the possible experimental evidence for the spin triplet Andreev reflection and induced spin-triplet superconductivity at ferromagnet/superconductor interface arising from Rashba spin-orbit coupling. The temperature, voltage, and interfacial barrier dependences of the magnetoresistance further support the induced spin-triplet superconductivity and spin-triplet Andreev reflection. This discovery, together with the impressive advances in two-dimensional van der Waals ferromagnets, opens an important opportunity to design and probe superconducting interfaces with exotic properties.
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Submitted 20 November, 2021; v1 submitted 2 November, 2021;
originally announced November 2021.
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Origami spring-inspired shape morphing for flexible robotics
Authors:
Qianying Chen,
Fan Feng,
Pengyu Lv,
Huiling Duan
Abstract:
Flexible robotics are capable of achieving various functionalities by shape morphing, benefiting from their compliant bodies and reconfigurable structures. Here we construct and study a class of origami springs generalized from the known interleaved origami spring, as promising candidates for shape morphing in flexible robotics. These springs are found to exhibit nonlinear stretch-twist coupling a…
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Flexible robotics are capable of achieving various functionalities by shape morphing, benefiting from their compliant bodies and reconfigurable structures. Here we construct and study a class of origami springs generalized from the known interleaved origami spring, as promising candidates for shape morphing in flexible robotics. These springs are found to exhibit nonlinear stretch-twist coupling and linear/nonlinear mechanical response in the compression/tension region, analyzed by the demonstrated continuum mechanics models, experiments, and finite element simulations. To improve the mechanical performance such as the damage resistance, we establish an origami rigidization method by adding additional creases to the spring system. Guided by the theoretical framework, we experimentally realize three types of flexible robotics -- origami spring ejectors, crawlers, and transformers. These robots show the desired functionality and outstanding mechanical performance. The proposed concept of origami-aided design is expected to pave the way to facilitate the diverse shape morphing of flexible robotics.
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Submitted 3 June, 2021; v1 submitted 10 February, 2021;
originally announced February 2021.
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Strain-induced semiconductor to metal transition in MA2Z4 bilayers
Authors:
Hongxia Zhong,
Wenqi Xiong,
Pengfei Lv,
** Yu,
Shengjun Yuan
Abstract:
Very recently, a new type of two-dimensional layered material MoSi2N4 has been fabricated, which is semiconducting with weak interlayer interaction, high strength, and excellent stability. We systematically investigate theoretically the effect of vertical strain on the electronic structure of MA2Z4 (M=Ti/Cr/Mo, A=Si, Z=N/P) bilayers. Taking bilayer MoSi2N4 as an example, our first principle calcul…
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Very recently, a new type of two-dimensional layered material MoSi2N4 has been fabricated, which is semiconducting with weak interlayer interaction, high strength, and excellent stability. We systematically investigate theoretically the effect of vertical strain on the electronic structure of MA2Z4 (M=Ti/Cr/Mo, A=Si, Z=N/P) bilayers. Taking bilayer MoSi2N4 as an example, our first principle calculations show that its indirect band gap decreases monotonically as the vertical compressive strain increases. Under a critical strain around 22%, it undergoes a transition from semiconductor to metal. We attribute this to the opposite energy shift of states in different layers, which originates from the built-in electric field induced by the asymmetric charge transfer between two inner sublayers near the interface. Similar semiconductor to metal transitions are observed in other strained MA2Z4 bilayers, and the estimated critical pressures to realize such transitions are within the same order as semiconducting transition metal dichalcogenides. The semiconductor to metal transitions observed in the family of MA2Z4 bilayers present interesting possibilities for strain-induced engineering of their electronic properties.
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Submitted 18 September, 2020;
originally announced September 2020.
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Multi-ultraflatbands tunability and effect of spin-orbit coupling in twisted bilayer transition metal dichalcogenides
Authors:
Zhen Zhan,
Yipei Zhang,
Pengfei Lv,
Hongxia Zhong,
Guodong Yu,
Francisco Guinea,
Jose Angel Silva-Guillen,
Shengjun Yuan
Abstract:
Ultraflatbands that have been theoretically and experimentally detected in a bunch of van der Waals stacked materials showing some peculiar properties, for instance, highly localized electronic states and enhanced electron-electron interactions. In this Letter, using an accurate tight-binding model, we study the formation and evolution of ultraflatbands in transition metal dichalcogenides (TMDCs)…
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Ultraflatbands that have been theoretically and experimentally detected in a bunch of van der Waals stacked materials showing some peculiar properties, for instance, highly localized electronic states and enhanced electron-electron interactions. In this Letter, using an accurate tight-binding model, we study the formation and evolution of ultraflatbands in transition metal dichalcogenides (TMDCs) under low rotation angles. We find that, unlike in twisted bilayer graphene, ultraflatbands exist in TMDCs for almost any small twist angles and their wave function becomes more localized when the rotation angle decreases. Lattice relaxation, pressure and local deformation can tune the width of the flatbands, as well as their localization. Furthermore, we investigate the effect of spin-orbit coupling on the flatbands and discover spin/orbital/valley locking at the minimum of the conduction band at the K point of the Brillouin zone. The ultraflatbands found in TMDCs with a range of rotation angle below $7^\circ$, may provide an ideal platform to study strongly correlated states.
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Submitted 10 September, 2020; v1 submitted 28 May, 2020;
originally announced May 2020.
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Conductive Domain Walls in Non-Oxide Ferroelectrics Sn2P2S6
Authors:
Jianming Deng,
Xingan Jiang,
Yanyu Liu,
Wei Zhao,
Yun Li,
Ziyan Gao,
Peng Lv,
Sheng Xu,
Tian-Long Xia,
**chen Wang,
Meixia Wu,
Zishuo Yao,
Xueyun Wang,
Jiawang Hong
Abstract:
The conductive domain wall (CDW) is extensively investigated in ferroelectrics, which can be considered as a quasi-two-dimensional reconfigurable conducting channel embedded into an insulating material. Therefore, it is highly important for the application of ferroelectric nanoelectronics. Hitherto, most CDW investigations are restricted in oxides, and limited work has been reported in non-oxides…
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The conductive domain wall (CDW) is extensively investigated in ferroelectrics, which can be considered as a quasi-two-dimensional reconfigurable conducting channel embedded into an insulating material. Therefore, it is highly important for the application of ferroelectric nanoelectronics. Hitherto, most CDW investigations are restricted in oxides, and limited work has been reported in non-oxides to the contrary. Here, by successfully synthesizing the non-oxide ferroelectric Sn2P2S6 single crystal, we observed and confirmed the domain wall conductivity by using different scanning probe techniques which origins from the nature of inclined domain walls. Moreover, the domains separated by CDW also exhibit distinguishable electrical conductivity due to the interfacial polarization charge with opposite signs. The result provides a novel platform for understanding electrical conductivity behavior of the domains and domain walls in non-oxide ferroelectrics.
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Submitted 30 March, 2020;
originally announced March 2020.
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Ferroelastic switching with van der Waals direction transformation in layered PdSe2 driven by uniaxial and shear strain
Authors:
Peng Lv,
Gang Tang,
Yanyu Liu,
Yingzhuo Lun,
Xueyun Wang,
Jiawang Hong
Abstract:
Uniaxial and biaxial strain approaches are usually implemented to switch the ferroelastic states, which play a key role in the application of the ferroics and shape memory materials. In this work, by using the first-principles calculations, we found not only uniaxial strain, but also shear strain can induce a novel ferroelastic switching, in which the van der Waals (vdW) layered direction rotates…
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Uniaxial and biaxial strain approaches are usually implemented to switch the ferroelastic states, which play a key role in the application of the ferroics and shape memory materials. In this work, by using the first-principles calculations, we found not only uniaxial strain, but also shear strain can induce a novel ferroelastic switching, in which the van der Waals (vdW) layered direction rotates with the ferroelastic transition in layered bulk PdSe2. The shear strain induces ferroelastic switching with three times amplitude smaller than uniaxial strain. The novel three-states ferroelastic switching in layered PdSe2 also occurs under shear strain. Our result shows that the shear strain could be used as an effective approach for manipulating the functionalities of layered materials in potential device applications.
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Submitted 26 February, 2020;
originally announced February 2020.
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Thickness-dependent in-plane polarization and structural phase transition in van der Waals Ferroelectric CuInP2S6
Authors:
Jianming Deng,
Yanyu Liu,
Mingqiang Li,
Sheng Xu,
Yingzhuo Lun,
Peng Lv,
Tianlong Xia,
Peng Gao,
Xueyun Wang,
Jiawang Hong
Abstract:
Van der Waals (vdW) layered materials have rather weaker interlayer bonding than the intra-layer bonding, therefore the exfoliation along the stacking direction enables the achievement of monolayer or few layers vdW materials with emerging novel physical properties and functionalities. The ferroelectricity in vdW materials recently attracts renewed interest for the potential use in high-density st…
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Van der Waals (vdW) layered materials have rather weaker interlayer bonding than the intra-layer bonding, therefore the exfoliation along the stacking direction enables the achievement of monolayer or few layers vdW materials with emerging novel physical properties and functionalities. The ferroelectricity in vdW materials recently attracts renewed interest for the potential use in high-density storage devices. As the thickness going thinner, the competition between the surface energy, depolarization field and interfacial chemical bonds may give rise to the modification of ferroelectricity and crystalline structure, which has limited investigations. In this work, combining the piezoresponse force microscope scanning, contact resonance imaging, we report the existence of the intrinsic in-plane polarization in vdW ferroelectrics CuInP2S6 (CIPS) single crystals, whereas below a critical thickness between 90-100 nm, the in-plane polarization disappears. The Young's modulus also shows an abrupt stiffness at the critical thickness. Based on the density functional theory calculations, we ascribe these behaviors to a structural phase transition from monoclinic to trigonal structure, which is further verified by transmission electron microscope technique. Taken together, these findings demonstrate the foundational importance of structural phase transition for enhancing the rich functionality and broad utility of vdW ferroelectrics.
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Submitted 19 November, 2019;
originally announced November 2019.
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Spontaneous photo-generated carrier separation of SnO/BiOX (X=Cl, Br, I) bilayer under visible light irradiation for water splitting
Authors:
Yanyu Liu,
Peng Lv,
Wei Zhou,
Jiawang Hong
Abstract:
Alloying in 2D materials plays a more and more important role due to wide range bandgap tunability and integrating the advantages of HER and OER. Here, the novel bilayers of SnO/BiOX (X= Cl, Br and I) bilayer are constructed to integrate the advantages of narrow bandgap and separating photo-generated carriers. The bandgap of the bilayers can be tuned from 1.09 to 1.84 eV, remarkably improving the…
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Alloying in 2D materials plays a more and more important role due to wide range bandgap tunability and integrating the advantages of HER and OER. Here, the novel bilayers of SnO/BiOX (X= Cl, Br and I) bilayer are constructed to integrate the advantages of narrow bandgap and separating photo-generated carriers. The bandgap of the bilayers can be tuned from 1.09 to 1.84 eV, remarkably improving the utilization of solar energy. The large difference in effective masses and built-in electric field effectively hamper the fast recombination of photo-generated carries, which highly enhances the photocatalytic efficiency. Besides that, the type-II band alignment guarantee the two half reactions could occur at different surfaces. Moreover, the optical absorption (the strong transition between band edges and high joint density of states) and band-edge level further confirm the SnO/BiOX (X= Cl and Br) bilayer is a promising candidate for overall water-splitting.
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Submitted 15 October, 2019;
originally announced October 2019.
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Quantum transport through three-dimensional topological insulator p-n junction under magnetic field
Authors:
Ning Dai,
Yan-Feng Zhou,
Peng Lv,
Qing-Feng Sun
Abstract:
The 3D topological insulator (TI) PN junction under magnetic fields presents a novel transport property which is investigated both theoretically and numerically in this paper. Transport in this device can be tuned by the axial magnetic field. Specifically, the scattering coefficients between incoming and outgoing modes oscillate with axial magnetic flux at the harmonic form. In the condition of ho…
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The 3D topological insulator (TI) PN junction under magnetic fields presents a novel transport property which is investigated both theoretically and numerically in this paper. Transport in this device can be tuned by the axial magnetic field. Specifically, the scattering coefficients between incoming and outgoing modes oscillate with axial magnetic flux at the harmonic form. In the condition of horizontal mirror symmetry, the initial phase of the harmonic oscillation is dependent on the parities of incoming and outgoing modes. This symmetry is broken when a vertical bias is applied which leads to a kinetic phase shift added to the initial phase. On the other hand, the amplitude of oscillation is suppressed by the surface disorder while it has no influence on the phase of oscillation. Furthermore, with the help of the vertical bias, a special (1,-2) 3D TI PN junction can be achieved, leading to a novel spin precession phenomenon.
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Submitted 23 August, 2018;
originally announced August 2018.
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High Curie temperature half metallic 2D M2Se3 (M = Co, Ni, and Pd) monolayers with superior mechanical flexibility
Authors:
Peng Lv,
Gang Tang,
Chao Yang,
Jianming Deng,
Yanyu Liu,
Xueyun Wang,
Xianqiao Wang,
Jiawang Hong
Abstract:
Pursuing two-dimensional (2D) intrinsic ferromagnetism with high Curie temperature and great mechanical flexibility has attracted great interest in flexible spintronics. In the present work, we carried out a density functional theory (DFT) investigation on the 2D M2Se3 (M=Co, Ni and Pd) monolayers to understand their structural stabilities, electronic, magnetic and mechanical properties. Our resul…
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Pursuing two-dimensional (2D) intrinsic ferromagnetism with high Curie temperature and great mechanical flexibility has attracted great interest in flexible spintronics. In the present work, we carried out a density functional theory (DFT) investigation on the 2D M2Se3 (M=Co, Ni and Pd) monolayers to understand their structural stabilities, electronic, magnetic and mechanical properties. Our results show that the Co2Se3 monolayer exhibits a fascinating half-metallic ferromagnetism with high Curie temperature (>700K). In addition, due to their unique buckling hinge-like structure, M2Se3 monolayers possess the large out-of-plane negative Poisson's ratio (NPR) and superior mechanical flexibility evidenced by their unusual critical strain two times greater than the well-known 2D materials. These findings imply that 2D M2Se3 family is the promising materials for the applications in the flexible and high-density spintronic nanodevices.
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Submitted 19 May, 2018;
originally announced May 2018.
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Magnetic Flux Control of Chiral Majorana Edge Modes in Topological Superconductor
Authors:
Yan-Feng Zhou,
Zhe Hou,
Peng Lv,
X. C. Xie,
Qing-Feng Sun
Abstract:
We study the transport of chiral Majorana edge modes (CMEMs) in a hybrid quantum anomalous Hall insulator-topological superconductor (QAHI-TSC) system in which the TSC region contains a Josephson junction and a cavity. The Josephson junction undergoes a topological transition when the magnetic flux through the cavity passes through half-integer multiples of magnetic flux quantum. For the trivial p…
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We study the transport of chiral Majorana edge modes (CMEMs) in a hybrid quantum anomalous Hall insulator-topological superconductor (QAHI-TSC) system in which the TSC region contains a Josephson junction and a cavity. The Josephson junction undergoes a topological transition when the magnetic flux through the cavity passes through half-integer multiples of magnetic flux quantum. For the trivial phase, the CMEMs transmit along the QAHI-TSC interface as without magnetic flux. However, for the nontrivial phase, a zero-energy Majorana state appears in the cavity, leading that a CMEM can resonantly tunnel through the Majorana state to a different CMEM. These findings may provide a feasible scheme to control the transport of CMEMs by using the magnetic flux and the transport pattern can be customized by setting the size of the TSC.
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Submitted 18 April, 2018;
originally announced April 2018.
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Liquid-liquid displacement in slippery liquid-infused membranes (SLIMs)
Authors:
Hanieh Bazyar,
Pengyu Lv,
Jeffery A. Wood,
Slawomir Porada,
Detlef Lohse,
Rob G. H. Lammertink
Abstract:
Liquid-infused membranes inspired by slippery liquid-infused porous surfaces (SLIPS) have been recently introduced to membrane technology. The gating mechanism of these membranes is expected to give rise to anti-fouling properties and multi-phase transport capabilities. However, the long-term retention of the infusion liquid has not yet been explored. To address this issue, we investigate the rete…
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Liquid-infused membranes inspired by slippery liquid-infused porous surfaces (SLIPS) have been recently introduced to membrane technology. The gating mechanism of these membranes is expected to give rise to anti-fouling properties and multi-phase transport capabilities. However, the long-term retention of the infusion liquid has not yet been explored. To address this issue, we investigate the retention of the infusion liquid in slippery liquid-infused membranes (SLIMs) via liquid-liquid displacement porometry (LLDP) experiments combined with microscopic observations of the displacement mechanism. Our results reveal that pores will be opened corresponding to the capillary pressure, leading to preferential flow pathways for water transport. The LLDP results further suggest the presence of liquid-lined pores in SLIM. This hypothesis is analyzed theoretically using an interfacial pore flow model. We find that the displacement patterns correspond to capillary fingering in immiscible displacement in porous media. The related physics regarding two-phase flow in porous media is used to confirm the permeation mechanism appearing in SLIMs. In order to experimentally observe liquid-liquid displacement, a microfluidic chip mimicking a porous medium is designed and a highly ramified structure with trapped infusion liquid is observed. The remaining infusion liquid is retained as pools, bridges and thin films around pillar structures in the chip, which further confirms liquid-lining. Fractal dimension analysis, along with evaluation of the fluid (non-wetting phase) saturation, further confirms that the fractal patterns correspond to capillary fingering, which is consistent with an invasion percolation with trap** (IPT) model.
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Submitted 11 April, 2018;
originally announced April 2018.
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Gate voltage controlled thermoelectric figure of merit in three-dimensional topological insulator nanowires
Authors:
Ning-Xuan Yang,
Yan-Feng Zhou,
Peng Lv,
Qing-Feng Sun
Abstract:
The thermoelectric properties of the surface states in three-dimensional topological insulator nanowires are studied. The Seebeck coefficients $S_c$ and the dimensionless thermoelectrical figure of merit $ZT$ are obtained by using the tight-binding Hamiltonian combining with the nonequilibrium Green's function method. They are strongly dependent on the gate voltage and the longitudinal and perpend…
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The thermoelectric properties of the surface states in three-dimensional topological insulator nanowires are studied. The Seebeck coefficients $S_c$ and the dimensionless thermoelectrical figure of merit $ZT$ are obtained by using the tight-binding Hamiltonian combining with the nonequilibrium Green's function method. They are strongly dependent on the gate voltage and the longitudinal and perpendicular magnetic fields. By changing the gate voltage or magnetic fields, the values of $S_c$ and $ZT$ can be easily controlled. At the zero magnetic fields and zero gate voltage, or at the large perpendicular magnetic field and nonzero gate voltage, $ZT$ has the large value. Owing to the electron-hole symmetry, $S_c$ is an odd function of the Fermi energy while $ZT$ is an even function regardless of the magnetic fields. $S_c$ and $ZT$ show peaks when the quantized transmission coefficient jumps from one plateau to another. The highest peak appears while the Fermi energy is near the Dirac point. At the zero perpendicular magnetic field and zero gate voltage, the height of $n$th peak of $S_C$ is $\frac{k_B}{e}\texttt{ln}2/(|n|+1/2)$ and $\frac{k_B}{e}\texttt{ln}2/|n|$ for the longitudinal magnetic flux $φ_{\parallel} = 0 $ and $π$, respectively. Finally, we also study the effect of disorder and find that $S_c$ and $ZT$ are robust against disorder. In particular, the large value of $ZT$ can survive even if at the strong disorder. These characteristics (that $ZT$ has the large value, is easily regulated, and is robust against the disorder) are very beneficial for the application of the thermoelectricity.
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Submitted 28 March, 2018;
originally announced March 2018.
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Magnetoanisotropic spin-triplet Andreev reflection in ferromagnet-Ising superconductor junctions
Authors:
Peng Lv,
Yan-Feng Zhou,
Ning-Xuan Yang,
Qing-Feng Sun
Abstract:
We theoretically study the electronic transport through a ferromagnet-Ising superconductor junction. A tight-binding Hamiltonian describing the Ising superconductor is presented. Then by combing the non-equilibrium Green's function method, the expressions of Andreev reflection coefficient and conductance are obtained. A strong magnetoanisotropic spin-triplet Andreev reflection is shown, and the ma…
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We theoretically study the electronic transport through a ferromagnet-Ising superconductor junction. A tight-binding Hamiltonian describing the Ising superconductor is presented. Then by combing the non-equilibrium Green's function method, the expressions of Andreev reflection coefficient and conductance are obtained. A strong magnetoanisotropic spin-triplet Andreev reflection is shown, and the magnetoanisotropic period is $π$ instead of $2π$ as in the conventional magnetoanisotropic system. We demonstrate a significant increase of the spin-triplet Andreev reflection for the single-band Ising superconductor. Furthermore, the dependence of the Andreev reflection on the incident energy and incident angle are also investigated. A complete Andreev reflection can occur when the incident energy is equal to the superconductor gap, regardless of the Fermi energy (spin polarization) of the ferromagnet. For the suitable oblique incidence, the spin-triplet Andreev reflection can be strongly enhanced. In addition, the conductance spectroscopies of both zero bias and finite bias are studied, and the influence of gate voltage, exchange energy, and spin-orbit coupling on the conductance spectroscopy are discussed in detail. The conductance reveals a strong magnetoanisotropy with period $π$ as the Andreev reflection coefficient. When the magnetization direction is parallel to the junction plane, a large conductance peak always emerges at the superconductor gap. This work offers a comprehensive and systematic study of the spin-triplet Andreev reflection, and has underlying application of $π$-periodic spin valve in spintronics.
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Submitted 18 February, 2018;
originally announced February 2018.
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Double refraction and spin splitter in a normal-hexagonal semiconductor junction
Authors:
Peng Lv,
Ning Dai,
Qing-Feng Sun
Abstract:
In analogy with light refraction at optical boundary, ballistic electrons also undergo refraction when propagate across a semiconductor junction. Establishing a negative refractive index in conventional optical materials is difficult, but the realization of negative refraction in electronic system is conceptually straightforward, which has been verified in graphene p-n junctions in recent experime…
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In analogy with light refraction at optical boundary, ballistic electrons also undergo refraction when propagate across a semiconductor junction. Establishing a negative refractive index in conventional optical materials is difficult, but the realization of negative refraction in electronic system is conceptually straightforward, which has been verified in graphene p-n junctions in recent experiments. Here, we propose a model to realize double refraction and double focusing of electric current by a normal-hexagonal semiconductor junction. The double refraction can be either positive or negative, depending on the junction being n-n type or p-n type. Based on the valley-dependent negative refraction, a spin splitter (valley splitter) is designed at the p-n junction system, where the spin-up and spin-down electrons are focused at different regions. These findings may be useful for the engineering of double lenses in electronic system and have underlying application of spin splitter in spintronics.
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Submitted 17 November, 2017;
originally announced November 2017.
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Spin-flip reflection at the normal metal-spin superconductor interface
Authors:
Peng Lv,
Ai-Min Guo,
Huaiyu Li,
Chunxiao Liu,
X. C. Xie,
Qing-Feng Sun
Abstract:
We study spin transport through a normal metal-spin superconductor junction. A spin-flip reflection is demonstrated at the interface, where a spin-up electron incident from the normal metal can be reflected as a spin-down electron and the spin $2\times \hbar/2$ will be injected into the spin superconductor. When the (spin) voltage is smaller than the gap of the spin superconductor, the spin-flip r…
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We study spin transport through a normal metal-spin superconductor junction. A spin-flip reflection is demonstrated at the interface, where a spin-up electron incident from the normal metal can be reflected as a spin-down electron and the spin $2\times \hbar/2$ will be injected into the spin superconductor. When the (spin) voltage is smaller than the gap of the spin superconductor, the spin-flip reflection determines the transport properties of the junction. We consider both graphene-based (linear-dispersion-relation) and quadratic-dispersion-relation normal metal-spin superconductor junctions in detail. For the two-dimensional graphene-based junction, the spin-flip reflected electron can be along the specular direction (retro-direction) when the incident and reflected electron locates in the same band (different bands). A perfect spin-flip reflection can occur when the incident electron is normal to the interface, and the reflection coefficient is slightly suppressed for the oblique incident case. As a comparison, for the one-dimensional quadratic-dispersion-relation junction, the spin-flip reflection coefficient can reach 1 at certain incident energies. In addition, both the charge current and the spin current under a charge (spin) voltage are studied. The spin conductance is proportional to the spin-flip reflection coefficient when the spin voltage is less than the gap of the spin superconductor. These results will help us get a better understanding of spin transport through the normal metal-spin superconductor junction.
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Submitted 17 November, 2017;
originally announced November 2017.
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Ginzburg-Landau-type theory of non-polarized spin superconductivity
Authors:
Peng Lv,
Zhi-qiang Bao,
Ai-Min Guo,
X. C. Xie,
Qing-Feng Sun
Abstract:
Since the concept of spin superconductor was proposed, all the related studies concentrate on spin-polarized case. Here, we generalize the study to spin-non-polarized case. The free energy of non-polarized spin superconductor is obtained, and the Ginzburg-Landau-type equations are derived by using the variational method. These Ginzburg-Landau-type equations can be reduced to the spin-polarized cas…
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Since the concept of spin superconductor was proposed, all the related studies concentrate on spin-polarized case. Here, we generalize the study to spin-non-polarized case. The free energy of non-polarized spin superconductor is obtained, and the Ginzburg-Landau-type equations are derived by using the variational method. These Ginzburg-Landau-type equations can be reduced to the spin-polarized case when the spin direction is fixed. Moreover, the expressions of super linear and angular spin currents inside the superconductor are derived. We demonstrate that the electric field induced by super spin current is equal to the one induced by equivalent charge obtained from the second Ginzburg-Landau-type equation, which shows self-consistency of our theory. By applying these Ginzburg-Landau-type equations, the effect of electric field on the superconductor is also studied. These results will help us get a better understanding of the spin superconductor and the related topics such as Bose-Einstein condensate of magnons and spin superfluidity.
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Submitted 17 November, 2017;
originally announced November 2017.
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Magnetic Core-Shell Structure and Proximity Effect in 7 nm Single-Crystal Co3O4 Nanowires
Authors:
** Lv,
Yan Zhang,
Rui Xu,
Jia-Cai Nie,
Lin He
Abstract:
We present a study of magnetic properties of single-crystal Co3O4 nanowires with diameter about 7 nm. The nanowires expose (111) planes composed of plenty of Co3+ cations and exhibit two Néel temperatures at 56 K (TN of wire cores) and 73 K (TN of wire shells), which are far above TN = 40 K of bulk Co3O4. This novel bahavior is attributed to symmetry breaking of surface Co3+ cations and magnetic p…
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We present a study of magnetic properties of single-crystal Co3O4 nanowires with diameter about 7 nm. The nanowires expose (111) planes composed of plenty of Co3+ cations and exhibit two Néel temperatures at 56 K (TN of wire cores) and 73 K (TN of wire shells), which are far above TN = 40 K of bulk Co3O4. This novel bahavior is attributed to symmetry breaking of surface Co3+ cations and magnetic proximity effect. The nanowire shells show macroscopic residual magnetic moments. Cooling in a magnetic field, a fraction of the residual moments are tightly pinned to the antiferromagnetic lattice, which results in an obvious horizontal and vertical shift of hysteresis loop. Our experiment demonstrates that the exchange bias field HE and the pinned magnetic moments Mpin follow a simple expression HE = aMpin with a a constant.
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Submitted 22 September, 2011;
originally announced September 2011.