Showing 1–50 of 145 results for author: Luo, G

High-Temperature Effects for Transition State Calculations in Solids

Authors: Chengxuan Ke, Chenxi Nie, Guangfu Luo

Abstract: Transition state calculation is a critical technique to understand and predict versatile dynamical phenomena in solids. However, the transition state results obtained at zero Kelvin are often utilized for prediction or interpretation of dynamical processes at high temperatures, and the error bars of such approximation are largely unknown. In this benchmark study, all the major temperature effects… ▽ More Transition state calculation is a critical technique to understand and predict versatile dynamical phenomena in solids. However, the transition state results obtained at zero Kelvin are often utilized for prediction or interpretation of dynamical processes at high temperatures, and the error bars of such approximation are largely unknown. In this benchmark study, all the major temperature effects including lattice expansion, lattice vibration, electron excitation, and band-edge shift are evaluated with first-principles calculations for defects diffusion in solids. With inclusion of these temperature effects, the notable discrepancies between theoretical predictions at zero Kelvin and the experimental diffusivities at high temperatures are dramatically reduced. Particularly, we find that the lattice expansion and lattice vibration are dominant factors lowering the defect formation energies and hop** barriers at high temperatures, but the electron excitation exhibits minor effects. In sharp contrast to typical assumption, the attempt frequency with lattice expansion and vibration varies significantly with materials: several THz for aluminum bulk but surprisingly over 500 THz for 4H-SiC. For defects in semiconductors, the band-edge shift is also significant at high temperatures and plays a vital role in the defect diffusion. We expect this study would help accurately predict the dynamical processes at high temperatures. △ Less

Submitted 1 November, 2023; originally announced November 2023.

Singlet-triplet-state readout in silicon-metal-oxide-semiconductor double quantum dots

Authors: Rong-Long Ma, Sheng-Kai Zhu, Zhen-Zhen Kong, Tai-** Sun, Ming Ni, Yu-Chen Zhou, Yuan Zhou, Gang Luo, Gang Cao, Gui-Lei Wang, Hai-Ou Li, Guo-** Guo

Abstract: High-fidelity singlet-triplet state readout is essential for large-scale quantum computing. However, the widely used threshold method of comparing a mean value with the fixed threshold will limit the judgment accuracy, especially for the relaxed triplet state, under the restriction of relaxation time and signal-to-noise ratio. Here, we achieve an enhanced latching readout based on Pauli spin block… ▽ More High-fidelity singlet-triplet state readout is essential for large-scale quantum computing. However, the widely used threshold method of comparing a mean value with the fixed threshold will limit the judgment accuracy, especially for the relaxed triplet state, under the restriction of relaxation time and signal-to-noise ratio. Here, we achieve an enhanced latching readout based on Pauli spin blockade in a Si-MOS double quantum dot device and demonstrate an average singlet-triplet state readout fidelity of 97.59% by the threshold method. We reveal the inherent deficiency of the threshold method for the relaxed triplet state classification and introduce machine learning as a relaxation-independent readout method to reduce the misjudgment. The readout fidelity for classifying the simulated single-shot traces can be improved to 99.67% by machine learning method, better than the threshold method of 97.54% which is consistent with the experimental result. This work indicates that machine learning method can be a strong potential candidate for alleviating the restrictions of stably achieving high-fidelity and high-accuracy singlet-triplet state readout in large-scale quantum computing. △ Less

Submitted 18 September, 2023; originally announced September 2023.

Comments: 11 pages,11 figures,

Correcting on-chip distortion of control pulses with silicon spin qubits

Authors: Ming Ni, Rong-Long Ma, Zhen-Zhen Kong, Ning Chu, Wei-Zhu Liao, Sheng-Kai Zhu, Chu Wang, Gang Luo, Di Liu, Gang Cao, Gui-Lei Wang, Hai-Ou Li, Guo-** Guo

Abstract: Pulse distortion, as one of the coherent error sources, hinders the characterization and control of qubits. In the semiconductor quantum dot system, the distortions on measurement pulses and control pulses disturb the experimental results, while no effective calibration procedure has yet been reported. Here, we demonstrate two different calibration methods to calibrate and correct the distortion u… ▽ More Pulse distortion, as one of the coherent error sources, hinders the characterization and control of qubits. In the semiconductor quantum dot system, the distortions on measurement pulses and control pulses disturb the experimental results, while no effective calibration procedure has yet been reported. Here, we demonstrate two different calibration methods to calibrate and correct the distortion using the two-qubit system as a detector. The two calibration methods have different correction accuracy and complexity. One is the coarse predistortion (CPD) method, with which the distortion is partly relieved. The other method is the all predistortion (APD) method, with which we measure the transfer function and significantly improve the exchange oscillation homogeneity. The two methods use the exchange oscillation homogeneity as the metric and are appropriate for any qubit that oscillates with a diabatic pulse. With the APD procedure, an arbitrary control waveform can be accurately delivered to the device, which is essential for characterizing qubits and improving gate fidelity. △ Less

Submitted 18 September, 2023; originally announced September 2023.

Comments: 19 pages, 5 figures,

Decoding the Mechanisms of Reversibility Loss in Rechargeable Zinc-Air Batteries

Authors: Zhibin Yi, Liangyu Li, Cheuk Kai Chan, Yaxin Tang, Zhouguang Lu, Chunyi Zhi, Qing Chen, Guangfu Luo

Abstract: Attaining high reversibility of electrodes and electrolyte is essential for the longevity of secondary batteries. Rechargeable zinc-air batteries (RZABs), however, encounter drastic irreversible changes in the zinc anodes and air cathodes during cycling. To uncover the mechanisms of reversibility loss in RZABs, we investigate the evolution of zinc anode, alkaline electrolyte, and air electrode thr… ▽ More Attaining high reversibility of electrodes and electrolyte is essential for the longevity of secondary batteries. Rechargeable zinc-air batteries (RZABs), however, encounter drastic irreversible changes in the zinc anodes and air cathodes during cycling. To uncover the mechanisms of reversibility loss in RZABs, we investigate the evolution of zinc anode, alkaline electrolyte, and air electrode through experiments and first-principles calculations. Morphology diagrams of zinc anodes under versatile operating conditions reveal that the nano-sized mossy zinc dominates the later cycling stage. Such anodic change is induced by the increased zincate concentration due to hydrogen evolution, which is catalyzed by the mossy structure and results in oxide passivation on electrodes, and eventually leads to low true Coulombic efficiencies and short lifespans of batteries. Inspired by these findings, we finally present a novel overcharge-cycling protocol to compensate the Coulombic efficiency loss caused by hydrogen evolution and significantly extend the battery life. △ Less

Submitted 8 August, 2023; originally announced August 2023.

Bosonic Weyl excitations induced by $p$-orbital interactions in a cubic optical lattice

Authors: Guang-Quan Luo, Guan-Hua Huang, Zhi-Fang Xu

Abstract: Weyl points exist in a fascinating topological state of matter with linear band crossings analogous to magnetic monopoles. Tremendous efforts have been devoted to investigate fermionic topological matters with Weyl points in the single-particle band dispersion. It remains elusive for realizing interaction-induced Weyl points, especially for bosons. Motivated by recent experimental progress in ultr… ▽ More Weyl points exist in a fascinating topological state of matter with linear band crossings analogous to magnetic monopoles. Tremendous efforts have been devoted to investigate fermionic topological matters with Weyl points in the single-particle band dispersion. It remains elusive for realizing interaction-induced Weyl points, especially for bosons. Motivated by recent experimental progress in ultracold atoms, we propose a scheme to create Weyl points for Bogoliubov excitations of a bosonic superfluid in a three-dimensional cubic optical lattice. The unique design of the lattice leads to interaction-induced time-reversal symmetry breaking for a $p$-orbital superfluid, which in turn induces Weyl Bogoliubov excitations. Analogous to Weyl semimetals of electronic systems, the superfluid also support topologically protected edge modes due to the bulk-boundary correspondence. △ Less

Submitted 28 February, 2023; originally announced March 2023.

Structural Feature in Dynamical Processes Accelerated Transition State Calculations

Authors: Hongsheng Cai, Guoyuan Liu, Peiqi Qiu, Guangfu Luo

Abstract: Minimum energy path (MEP) search is a vital but often very time-consuming method to predict the transition states of versatile dynamic processes in chemistry, physics, and materials science. In this study, we reveal that the chemical bond lengths in the MEP structures, including those directly involved in the dynamical processes, largely resemble those in the stable initial and final states. Based… ▽ More Minimum energy path (MEP) search is a vital but often very time-consuming method to predict the transition states of versatile dynamic processes in chemistry, physics, and materials science. In this study, we reveal that the chemical bond lengths in the MEP structures, including those directly involved in the dynamical processes, largely resemble those in the stable initial and final states. Based on this discovery, we propose an adaptive semi-rigid body approximation (ASRBA) to construct a physically reasonable initial guess for the MEP structures, which can be further optimized by the nudged elastic band method. Examination of several distinct dynamical processes in bulk, on crystal surface, and through two-dimensional system show that the transition state calculations based on the ASRBA results are robust and significantly faster than those based on the popular linear interpolation and image-dependent pair potential methods. △ Less

Submitted 17 November, 2022; originally announced November 2022.

Reverse Do** Asymmetry in Semiconductor Thin Films Using External Voltage

Authors: Kai Liu, Zhibin Yi, Guangfu Luo

Abstract: Do** asymmetry is a notable phenomenon with semiconductors and a particularly longstanding challenge limiting the applications of most wide-band-gap semiconductors, which are inherent of spontaneous heavy n- or p-type do** because of their extreme band edges. This study theoretically shows that by applying a proper external voltage on materials during their growth or do** processes, we can l… ▽ More Do** asymmetry is a notable phenomenon with semiconductors and a particularly longstanding challenge limiting the applications of most wide-band-gap semiconductors, which are inherent of spontaneous heavy n- or p-type do** because of their extreme band edges. This study theoretically shows that by applying a proper external voltage on materials during their growth or do** processes, we can largely tune the band edges and consequently reverse the do** asymmetry in semiconductor thin films. We take zinc oxide as a touchstone and computationally demonstrate that this voltage-assisted-do** approach efficiently suppresses the spontaneous n-type defects by around four orders under three distinct growth conditions and successfully generates p-type zinc oxide up to the lowest acceptor levels. The proposed approach is insensitive to materials, growth conditions, or defects origins, and thus offers a general solution to the do** asymmetry in semiconductor thin films. △ Less

Submitted 28 June, 2023; v1 submitted 10 November, 2022; originally announced November 2022.

Journal ref: Phys. Rev. B 108, 035204 (2023)

Evidence for Quantum Stripe Ordering in a Triangular Optical Lattice

Authors: Xiao-Qiong Wang, Guang-Quan Luo, **-Yu Liu, Guan-Hua Huang, Zi-Xiang Li, Congjun Wu, Andreas Hemmerich, Zhi-Fang Xu

Abstract: Understanding strongly correlated quantum materials, such as high $T_\textrm{c}$ superconductors, iron-based superconductors, and twisted bilayer graphene systems, remains to be one of the outstanding challenges in condensed matter physics. Quantum simulation with ultra-cold atoms in particular optical lattices, which provide orbital degrees of freedom, is a powerful tool to contribute new insight… ▽ More Understanding strongly correlated quantum materials, such as high $T_\textrm{c}$ superconductors, iron-based superconductors, and twisted bilayer graphene systems, remains to be one of the outstanding challenges in condensed matter physics. Quantum simulation with ultra-cold atoms in particular optical lattices, which provide orbital degrees of freedom, is a powerful tool to contribute new insights to this endeavor. Here, we report the experimental realization of an unconventional Bose-Einstein condensate of $^{87}$Rb atoms populating degenerate $p$-orbitals in a triangular optical lattice, exhibiting remarkably long coherence times. Using time-of-flight spectroscopy, we observe that this state spontaneously breaks the rotational symmetry and its momentum spectrum agrees with the theoretically predicted coexistence of exotic stripe and loop current orders. Like certain strongly correlated electronic systems with intertwined orders, as high-$T_\textrm{c}$ cuprate superconductors, twisted bilayer graphene, and the recently discovered chiral density-wave state in kagome superconductors $\textrm{AV}_3 \textrm{Sb}_5$ (A=K, Rb, Cs), the newly demonstrated quantum state, in spite of its markedly different energy scale and the bosonic quantum statistics, exhibits multiple symmetry breakings at ultralow temperatures. These findings hold the potential to enhance our comprehension of the fundamental physics governing these intricate quantum materials. △ Less

Submitted 6 November, 2023; v1 submitted 10 November, 2022; originally announced November 2022.

Comments: 7+10 pages, 3+12 figures

Journal ref: Phys. Rev. Lett. 131, 226001 (2023)

Experimental realization of a high precision tunable hexagonal optical lattice

Authors: **-Yu Liu, Guang-Quan Luo, Xiao-Qiong Wang, Andreas Hemmerich, Zhi-Fang Xu

Abstract: Hexagonal optical lattices offer a tunable platform to study exotic orbital physics in solid state materials. Here, we present a versatile high-precision scheme to implement a hexagonal optical lattice potential, which is engineered by overlap** two independent triangular optical sublattices generated by laser beams with slightly different wavelengths around 1064 nm. This enables us to precisely… ▽ More Hexagonal optical lattices offer a tunable platform to study exotic orbital physics in solid state materials. Here, we present a versatile high-precision scheme to implement a hexagonal optical lattice potential, which is engineered by overlap** two independent triangular optical sublattices generated by laser beams with slightly different wavelengths around 1064 nm. This enables us to precisely control the detailed structure of the hexagonal lattice by adjusting the relative position and the relative lattice depth of the two triangular optical sublattices. Taking advantage of the sensitive dependence of the second Bloch band on small lattice deformations, we propose a strategy to optimize the optical lattice geometry with an extremely high precision. This method can also be extended to other lattice configurations involving more than two sublattices. Our work provides the experimental requirements in the search for novel orbital physics of ultracold atoms, for example, in the flat $p$-band of the hexagonal optical lattice. △ Less

Submitted 11 July, 2022; originally announced July 2022.

Comments: 9 pages, 4 figures

Gate-Controlled Quantum Dots Based on Two-Dimensional Materials

Authors: Fang-Ming **g, Zhuo-Zhi Zhang, Guo-Quan Qin, Gang Luo, Gang Cao, Hai-Ou Li, Xiang-Xiang Song, Guo-** Guo

Abstract: Two-dimensional (2D) materials are a family of layered materials exhibiting rich exotic phenomena, such as valley-contrasting physics. Down to single-particle level, unraveling fundamental physics and potential applications including quantum information processing in these materials attracts significant research interests. To unlock these great potentials, gate-controlled quantum dot architectures… ▽ More Two-dimensional (2D) materials are a family of layered materials exhibiting rich exotic phenomena, such as valley-contrasting physics. Down to single-particle level, unraveling fundamental physics and potential applications including quantum information processing in these materials attracts significant research interests. To unlock these great potentials, gate-controlled quantum dot architectures have been applied in 2D materials and their heterostructures. Such systems provide the possibility of electrical confinement, control, and manipulation of single carriers in these materials. In this review, efforts in gate-controlled quantum dots in 2D materials are presented. Following basic introductions to valley degree of freedom and gate-controlled quantum dot systems, the up-to-date progress in etched and gate-defined quantum dots in 2D materials, especially in graphene and transition metal dichalcogenides, is provided. The challenges and opportunities for future developments in this field, from views of device design, fabrication scheme, and control technology, are discussed. The rapid progress in this field not only sheds light on the understanding of spin-valley physics, but also provides an ideal platform for investigating diverse condensed matter physics phenomena and realizing quantum computation in the 2D limit. △ Less

Submitted 15 April, 2022; originally announced April 2022.

Comments: Invited review for Advanced Quantum Technologies

Interaction induced topological Bogoliubov excitations in a spin-orbit coupled Bose-Einstein condensate

Authors: Guan-Hua Huang, Guang-Quan Luo, Zhigang Wu, Zhi-Fang Xu

Abstract: We study topologically non-trivial excitations of a weakly interacting, spin-orbit coupled Bose-Einstein condensate in a two-dimensional square optical lattice, a system recently realized in experiment [W. Sun et al., Phys. Rev. Lett. 121, 150401 (2018)]. We focus on situations where the system is not subjected to a Zeeman field and thus does not exhibit nontrivial single-particle band topology. O… ▽ More We study topologically non-trivial excitations of a weakly interacting, spin-orbit coupled Bose-Einstein condensate in a two-dimensional square optical lattice, a system recently realized in experiment [W. Sun et al., Phys. Rev. Lett. 121, 150401 (2018)]. We focus on situations where the system is not subjected to a Zeeman field and thus does not exhibit nontrivial single-particle band topology. Of special interest then is the role of particle interaction as well as its interplay with the symmetry properties of the system in producing topologically non-trivial excitations. We find that the non-interacting system possesses a rich set of symmetries, including the $\mathcal{PT}$ symmetry, the modified dihedral point group symmetry $\tilde D_4$ and the nonsymmorphic symmetry. These combined symmetries ensure the existence of pairs of degenerate Dirac points at the edge of Brillouin zone for the single-particle energy bands. In the presence of particle interaction and with sufficient spin-orbit coupling, the atoms condense in a ground state with net magnetization which spontaneously breaks the $\mathcal{PT}$ and $\tilde D_4$ symmetry. We demonstrate that this symmetry breaking leads to a gap opening at the Dirac point for the Bogoliubov spectrum and consequentially topologically non-trivial excitations. We confirm the non-trivial topology by calculating the Chern numbers of the lowest excitation bands and show that gapless edge states form at the interface of systems characterized by different values of the Chern number. △ Less

Submitted 31 August, 2021; originally announced August 2021.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. A 103, 043328 (2021)

Evolution of transport properties in FeSe thin flakes with thickness approaching the two-dimensional limit

Authors: C. S. Zhu, B. Lei, Z. L. Sun, J. H. Cui, M. Z. Shi, W. Z. Zhuo, X. G. Luo, X. H. Chen

Abstract: Electronic properties of FeSe can be tuned by various routes. Here, we present a comprehensive study on the evolution of the superconductivity and nematicity in FeSe with thickness from bulk single crystal down to bilayer ($\sim$ 1.1 nm) through exfoliation. With decreasing flake thickness, both the structural transition temperature $T_{\rm s}$ and the superconducting transition temperature… ▽ More Electronic properties of FeSe can be tuned by various routes. Here, we present a comprehensive study on the evolution of the superconductivity and nematicity in FeSe with thickness from bulk single crystal down to bilayer ($\sim$ 1.1 nm) through exfoliation. With decreasing flake thickness, both the structural transition temperature $T_{\rm s}$ and the superconducting transition temperature $T_{\rm c}^{\rm zero}$ are greatly suppressed. The magnetic field ($B$) dependence of Hall resistance $R_{xy}$ at 15 K changes from $B$-nonlinear to $B$-linear behavior up to 9 T, as the thickness ($d$) is reduced to 13 nm. $T_{\rm c}$ is linearly dependent on the inverse of flake thickness (1/$d$) when $d\le$ 13 nm, and a clear drop of $T_{\rm c}$ appears with thickness smaller than 27 nm. The $I$-$V$ characteristic curves in ultrathin flakes reveal the signature of Berezinskii-Kosterlitz-Thouless (BKT) transition, indicating the presence of two-dimensional superconductivity. Anisotropic magnetoresistance measurements further support 2D superconductivity in few-layer FeSe. Increase of disorder scattering, anisotropic strains and dimensionality effect with reducing the thickness of FeSe flakes, might be taken into account for understanding these behaviors. Our study provides systematic insights into the evolution of the superconducting properties, structural transition and Hall resistance of a superconductor FeSe with flakes thickness and provides an effective way to find two-dimensional superconductivity as well as other 2D novel phenomena. △ Less

Submitted 22 July, 2021; originally announced July 2021.

Comments: 8 pages, 6 figures

Orbital ordering and fluctuations in a kagome superconductor CsV3Sb5

Authors: D. W. Song, L. X. Zheng, F. H. Yu, J. Li, L. P. Nie, M. Shan, D. Zhao, S. J. Li, B. L. Kang, Z. M. Wu, Y. B. Zhou, K. L. Sun, K. Liu, X. G. Luo, Z. Y. Wang, J. J. Ying, X. G. Wan, T. Wu, X. H. Chen

Abstract: Recently, competing electronic instabilities, including superconductivity and density-wave-like order, have been discovered in vanadium-based kagome metals AV3Sb5 (A = K, Rb, Cs) with a nontrivial band topology. This finding stimulates wide interests to study the interplay of these competing electronic orders and possible exotic excitations in the superconducting state. Here, in order to further c… ▽ More Recently, competing electronic instabilities, including superconductivity and density-wave-like order, have been discovered in vanadium-based kagome metals AV3Sb5 (A = K, Rb, Cs) with a nontrivial band topology. This finding stimulates wide interests to study the interplay of these competing electronic orders and possible exotic excitations in the superconducting state. Here, in order to further clarify the nature of density-wave-like transition in these kagome superconductors, we performed 51V and 133Cs nuclear magnetic resonance (NMR) measurements on the CsV3Sb5 single crystal. A first-order phase transition associated with orbital ordering is revealed by observing a sudden splitting of orbital shift in 51V NMR spectrum at the structural transition temperature Ts ~ 94 K. In contrast, the quadrupole splitting from a charge-density-wave (CDW) order on 51V NMR spectrum only appears gradually below Ts with a typical second-order transition behavior, suggesting that the CDW order is a secondary electronic order. Moreover, combined with 133Cs NMR spectrum, the present result also confirms a three-dimensional structural modulation with a 2ax2ax2c period. Above Ts, the temperature-dependent Knight shift and nuclear spin-lattice relaxation rate (1/T1) further indicate the existence of remarkable magnetic fluctuations from vanadium 3d orbitals, which are suppressed due to orbital ordering below Ts. The present results strongly support that, besides CDW order, the previously claimed density-wave-like transition also involves a dominant orbital order, suggesting a rich orbital physics in these kagome superconductors. △ Less

Submitted 19 April, 2021; originally announced April 2021.

Comments: 13 pages, 4 figures, supplementary information available upon request

Controlling Synthetic Spin-Orbit Coupling in a Silicon Quantum Dot with Magnetic Field

Authors: Xin Zhang, Yuan Zhou, Rui-Zi Hu, Rong-Long Ma, Ming Ni, Ke Wang, Gang Luo, Gang Cao, Gui-Lei Wang, Peihao Huang, Xuedong Hu, Hong-Wen Jiang, Hai-Ou Li, Guang-Can Guo, Guo-** Guo

Abstract: Tunable synthetic spin-orbit coupling (s-SOC) is one of the key challenges in various quantum systems, such as ultracold atomic gases, topological superconductors, and semiconductor quantum dots. Here we experimentally demonstrate controlling the s-SOC by investigating the anisotropy of spin-valley resonance in a silicon quantum dot. As we rotate the applied magnetic field in-plane, we find a stri… ▽ More Tunable synthetic spin-orbit coupling (s-SOC) is one of the key challenges in various quantum systems, such as ultracold atomic gases, topological superconductors, and semiconductor quantum dots. Here we experimentally demonstrate controlling the s-SOC by investigating the anisotropy of spin-valley resonance in a silicon quantum dot. As we rotate the applied magnetic field in-plane, we find a striking nonsinusoidal behavior of resonance amplitude that distinguishes s-SOC from the intrinsic spin-orbit coupling (i-SOC), and associate this behavior with the previously overlooked in-plane transverse magnetic field gradient. Moreover, by theoretically analyzing the experimentally measured s-SOC field, we predict the quality factor of the spin qubit could be optimized if the orientation of the in-plane magnetic field is rotated away from the traditional working point. △ Less

Submitted 18 May, 2021; v1 submitted 29 December, 2020; originally announced December 2020.

Comments: 26 pages, 10 figures

Journal ref: Phys. Rev. Applied 15, 044042 (2021)

Approaching itinerant magnetic quantum criticality through a Hund's coupling induced electronic crossover in the YFe$_2$Ge$_2$ superconductor

Authors: D. Zhao, H. L. Wo, J. Li, D. W. Song, L. X. Zheng, S. J. Li, L. P. Nie, X. G. Luo, J. Zhao, T. Wu, X. H. Chen

Abstract: Here, by conducting a systematic $^{89}$Y NMR study, we explore the nature of the magnetic ground state in a newly discovered iron-based superconductor YFe$_2$Ge$_2$. An incoherent-to-coherent crossover due to the Hund's coupling induced electronic correlation is revealed below the crossover temperature $T^*\sim 75\pm15\,\mathrm{K}$. During the electronic crossover, both the Knight shift ($K$) and… ▽ More Here, by conducting a systematic $^{89}$Y NMR study, we explore the nature of the magnetic ground state in a newly discovered iron-based superconductor YFe$_2$Ge$_2$. An incoherent-to-coherent crossover due to the Hund's coupling induced electronic correlation is revealed below the crossover temperature $T^*\sim 75\pm15\,\mathrm{K}$. During the electronic crossover, both the Knight shift ($K$) and the bulk magnetic susceptibility ($χ$) exhibit a similar nonmonotonic temperature dependence, and a so-called Knight shift anomaly is also revealed by a careful $K$-$χ$ analysis. Such an electronic crossover has been also observed in heavily hole-doped pnictide superconductors \emph{A}Fe$_2$As$_2$ (\emph{A} = K, Rb, and Cs), which is ascribed to the Hund's coupling induced electronic correlation. Below $T^*$, the spin-lattice relaxation rate divided by temperature $(1/T_1T)$ shows a similar suppression as the Knight shift, suggesting the absence of critical spin fluctuations. This seems to be in conflict with a predicted magnetic quantum critical point (QCP) near this system. However, considering a $\mathbf{q}$-dependent "filter" effect on the transferred hyperfine field, a predominant spin fluctuation with A-type correlation would be perfectly filtered out at $^{89}$Y sites, which is consistent with the recent inelastic neutron scattering results. Therefore, our results confirm that, through a Hund's coupling induced electronic crossover, the magnetic ground state of YFe$_2$Ge$_2$ becomes close to an itinerant magnetic QCP with A-type spin fluctuations. In addition, the possible superconducting pairing due to spin fluctuations is also discussed. △ Less

Submitted 20 February, 2020; originally announced February 2020.

Comments: 6 pages, 4 figures, supplementary information available upon request

Journal ref: Phys. Rev. B 101, 064511 (2020)

Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot

Authors: Xin Zhang, Rui-Zi Hu, Hai-Ou Li, Fang-Ming **g, Yuan Zhou, Rong-Long Ma, Ming Ni, Gang Luo, Gang Cao, Gui-Lei Wang, Xuedong Hu, Hong-Wen Jiang, Guang-Can Guo, Guo-** Guo

Abstract: In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2 ${\pm}$ 1.6 $μ$eV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magne… ▽ More In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2 ${\pm}$ 1.6 $μ$eV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magnetic field is oriented at an optimal angle, about 9° from the [100] sample plane. This directional anisotropy exhibits a sinusoidal modulation with a 180° periodicity. We explain the magnitude and phase of this modulation using a model that accounts for both spin-valley mixing and intravalley spin-orbit mixing. The generality of this phenomenon is also confirmed by tuning the electric field and the valley splitting up to 268.2 ${\pm}$ 0.7 $μ$eV. △ Less

Submitted 24 June, 2020; v1 submitted 17 December, 2019; originally announced December 2019.

Comments: 13 pages and 4 figures for Manuscript, 17 pages and 7 figures for Supplementary material

Journal ref: Phys. Rev. Lett. 124, 257701 (2020)

Coherent phonon dynamics in spatially separated graphene mechanical resonators

Authors: Zhuo-Zhi Zhang, Xiang-Xiang Song, Gang Luo, Zi-Jia Su, Kai-Long Wang, Gang Cao, Hai-Ou Li, Ming Xiao, Guang-Can Guo, Lin Tian, Guang-Wei Deng, Guo-** Guo

Abstract: Vibrational modes in mechanical resonators provide a promising candidate to interface and manipulate classical and quantum information. The observation of coherent dynamics between distant mechanical resonators can be a key step towards scalable phonon-based applications. Here we report tunable coherent phonon dynamics with an architecture comprising three graphene mechanical resonators coupled in… ▽ More Vibrational modes in mechanical resonators provide a promising candidate to interface and manipulate classical and quantum information. The observation of coherent dynamics between distant mechanical resonators can be a key step towards scalable phonon-based applications. Here we report tunable coherent phonon dynamics with an architecture comprising three graphene mechanical resonators coupled in series, where all resonators can be manipulated by electrical signals on control gates. We demonstrate coherent Rabi oscillations between spatially separated resonators indirectly coupled via an intermediate resonator serving as a phonon cavity. The Rabi frequency fits well with the microwave burst power on the control gate. We also observe Ramsey interference, where the oscillation frequency corresponds to the indirect coupling strength between these resonators. Such coherent processes indicate that information encoded in vibrational modes can be transferred and stored between spatially separated resonators, which can open the venue of on-demand phonon-based information processing. △ Less

Submitted 2 March, 2020; v1 submitted 25 September, 2019; originally announced September 2019.

Journal ref: Proc. Nat. Acad. Sci. USA (first published March 2, 2020)

Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing

Authors: Ke Wang, Hai-Ou Li, Gang Luo, Xin Zhang, Fang-Ming **g, Rui-Zi Hu, Yuan Zhou, He Liu, Gui-Lei Wang, Gang Cao, Ming Xiao, Hong-Wen Jiang, Guo-** Guo

Abstract: To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the Si/SiO2 interface. However, the importance of activation annealing is usually ignored. Here, we show that a high vacuum environment for implantation activation is beneficial for improving mobility compared to nitrogen at… ▽ More To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the Si/SiO2 interface. However, the importance of activation annealing is usually ignored. Here, we show that a high vacuum environment for implantation activation is beneficial for improving mobility compared to nitrogen atmosphere. Low-temperature transport measurements of Hall bars show that peak mobility can be improved by a factor of two, reaching 1.5 m^2/(Vs) using high vacuum annealing during implantation activation. Moreover, the charge stability diagram of a single quantum dot is mapped, with no visible disturbance caused by disorder, suggesting possibility of fabricating high-quality quantum dots on commercial wafers. Our results may provide valuable insights into device optimization in silicon-based quantum computing. △ Less

Submitted 7 May, 2020; v1 submitted 4 May, 2019; originally announced May 2019.

Comments: 13 pages, 4 figures

Journal ref: EPL,130, 27001 (2020)

Materials Discovery of Stable and Nontoxic Halide Perovskite Materials for High-Efficiency Solar Cells

Authors: Ryan Jacobs, Guangfu Luo, Dane Morgan

Abstract: Two critical limitations of organic-inorganic lead halide perovskite materials for solar cells are their poor stability in humid environments and inclusion of toxic lead. In this study, high-throughput density functional theory (DFT) methods are used to computationally model and screen 1845 halide perovskites in search of new materials without these limitations that are promising for solar cell ap… ▽ More Two critical limitations of organic-inorganic lead halide perovskite materials for solar cells are their poor stability in humid environments and inclusion of toxic lead. In this study, high-throughput density functional theory (DFT) methods are used to computationally model and screen 1845 halide perovskites in search of new materials without these limitations that are promising for solar cell applications. This study focuses on finding materials that are comprised of nontoxic elements, stable in a humid operating environment, and have an optimal bandgap for one of single junction, tandem Si-perovskite, or quantum dot-based solar cells. Single junction materials are also screened on predicted single junction photovoltaic (PV) efficiencies exceeding 22.7%, which is the current highest reported PV efficiency for halide perovskites. Generally, these methods qualitatively reproduce the properties of known promising nontoxic halide perovskites that have either been experimentally evaluated or predicted from theory. From a set of 1845 materials, 15 materials pass all screening criteria for single junction cell applications, 13 of which have not been previously investigated, such as (CH3NH3)0.75Cs0.25SnI3, ((NH2)2CH)Ag0.5Sb0.5Br3, CsMn0.875Fe0.125I3, ((CH3)2NH2)Ag0.5Bi0.5I3, and ((NH2)2CH)0.5Rb0.5SnI3. These materials, together with others predicted in this study, may be promising candidate materials for stable, highly efficient, and non-toxic perovskite-based solar cells. △ Less

Submitted 11 April, 2019; originally announced April 2019.

Journal ref: Advanced Functional Materials (2019)

Spin-Orbital-Intertwined Nematic State in FeSe

Authors: J. Li, B. Lei, D. Zhao, L. P. Nie, D. W. Song, L. X. Zheng, S. J. Li, B. L. Kang, X. G. Luo, T. Wu, X. H. Chen

Abstract: The importance of the spin-orbit coupling (SOC) effect in Fe-based superconductors (FeSCs) has recently been under hot debate. Considering the Hund's coupling-induced electronic correlation, the understanding of the role of SOC in FeSCs is not trivial and is still elusive. Here, through a comprehensive study of 77Se and 57Fe nuclear magnetic resonance, a nontrivial SOC effect is revealed in the ne… ▽ More The importance of the spin-orbit coupling (SOC) effect in Fe-based superconductors (FeSCs) has recently been under hot debate. Considering the Hund's coupling-induced electronic correlation, the understanding of the role of SOC in FeSCs is not trivial and is still elusive. Here, through a comprehensive study of 77Se and 57Fe nuclear magnetic resonance, a nontrivial SOC effect is revealed in the nematic state of FeSe. First, the orbital-dependent spin susceptibility, determined by the anisotropy of the 57Fe Knight shift, indicates a predominant role from the 3dxy orbital, which suggests the coexistence of local and itinerant spin degrees of freedom (d.o.f.) in the FeSe. Then, we reconfirm that the orbital reconstruction below the nematic transition temperature (Tnem ~ 90 K) happens not only on the 3dxz and 3dyz orbitals but also on the 3dxy orbital, which is beyond a trivial ferro-orbital order picture. Moreover, our results also indicate the development of a coherent coupling between the local and itinerant spin d.o.f. below Tnem, which is ascribed to a Hund's coupling-induced electronic crossover on the 3dxy orbital. Finally, due to a nontrivial SOC effect, sizable in-plane anisotropy of the spin susceptibility emerges in the nematic state, suggesting a spin-orbital-intertwined nematicity rather than simply spin- or orbital-driven nematicity}. The present work not only reveals a nontrivial SOC effect in the nematic state but also sheds light on the mechanism of nematic transition in FeSe. △ Less

Submitted 18 February, 2020; v1 submitted 13 March, 2019; originally announced March 2019.

Comments: 11 pages, 5 figures, supplementary information available upon request

Journal ref: Phys. Rev. X 10, 011034 (2020)

Structural and electronic phase transitions driven by electric field in metastable MoS$_2$ thin flake

Authors: C. Shang, B. Lei, W. Z. Zhuo, Q. Zhang, C. S. Zhu, J. H. Cui, X. G. Luo, N. Z. Wang, F. B. Meng, L. K. Ma, C. G. Zeng, T. Wu, Z. Sun, F. Q. Huang, X. H. Chen

Abstract: Transition-metal-dichalcogenides own a variety of structures as well as electronic properties which can be modulated by structural variations, element substitutions, ion or molecule intercalations, etc. However, there is very limited knowledge on metastable phases of this family, especially the precise regulation of structural changes and accompanied evolution of electronic properties. Here, based… ▽ More Transition-metal-dichalcogenides own a variety of structures as well as electronic properties which can be modulated by structural variations, element substitutions, ion or molecule intercalations, etc. However, there is very limited knowledge on metastable phases of this family, especially the precise regulation of structural changes and accompanied evolution of electronic properties. Here, based on a new developed field-effect transistor with solid ion conductor as the gate dielectric, we report a controllable structural and electronic phase transitions in metastable MoS$_2$ thin flakes driven by electric field. We found that the metastable structure of 1T$^{'''}$-MoS$_2$ thin flake can be transformed into another metastable structure of 1T$^{'}$ -type upon intercalation of lithium regulated by electric field. Moreover, the metastable 1T$^{'}$ phase persists during the cycle of intercalation and de-intercalation of lithium controlled by electric field, and the electronic properties can be reversibly manipulated with a remarkable change of resistance by four orders of magnitude from the insulating 1T$^{'}$-LiMoS$_2$ to superconducting 1T$^{'}$-MoS$_2$. Such reversible and dramatic changes in electronic properties provide intriguing opportunities for development of novel nano-devices with highly tunable characteristics under electric field. △ Less

Submitted 25 February, 2019; originally announced February 2019.

Comments: 5 pages, 4 figures, supplementary information is not included

Journal ref: Phys. Rev. B 100, 020508 (2019)

Revealing the hidden order in BaTi2As2O via nuclear magnetic resonance

Authors: D. W. Song, J. Li, D. Zhao, L. K. Ma, L. X. Zheng, S. J. Li, L. P. Nie, X. G. Luo, Z. P. Yin, T. Wu, X. H. Chen

Abstract: In low-dimensional metallic systems, lattice distortion is usually coupled to a density-wave-like electronic instability due to Fermi surface nesting (FSN) and strong electron-phonon coupling. However, the ordering of other electronic degrees of freedom can also occur simultaneously with the lattice distortion thus challenges the aforementioned prevailing scenario. Recently, a hidden electronic re… ▽ More In low-dimensional metallic systems, lattice distortion is usually coupled to a density-wave-like electronic instability due to Fermi surface nesting (FSN) and strong electron-phonon coupling. However, the ordering of other electronic degrees of freedom can also occur simultaneously with the lattice distortion thus challenges the aforementioned prevailing scenario. Recently, a hidden electronic reconstruction beyond FSN was revealed in a layered metallic compound BaTi2As2O below the structural transition temperature Ts ~ 200 K. The nature of this hidden electronic instability is under strong debate. Here, by measuring the local orbital polarization through 75As nuclear magnetic resonance experiment, we observe a p-d bond order between Ti and As atoms in BaTi2As2O single crystal. Below Ts, the bond order breaks both rotational and translational symmetry of the lattice. Meanwhile, the spin-lattice relaxation measurement indicates a substantial loss of density of states and an enhanced spin fluctuation in the bond-order state. Further first-principles calculations suggest that the mechanism of the bond order is due to the coupling of lattice and nematic instabilities. Our results strongly support a bond-order driven electronic reconstruction in BaTi2As2O and shed light on the mechanism of superconductivity in this family. △ Less

Submitted 29 June, 2018; originally announced June 2018.

Comments: 7 pages, 4 figures, supplemental material available upon request

Journal ref: Phys. Rev. B 98, 235142 (2018)

Bosonic Topological Excitations from the Instability of a Quadratic Band Crossing

Authors: Guang-Quan Luo, Andreas Hemmerich, Zhi-Fang Xu

Abstract: We investigate the interaction-driven instability of a quadratic band crossing arising for ultracold bosonic atoms loaded into a two-dimensional optical lattice. We consider the case when the degenerate point becomes a local minimum of both crossing energy bands such that it can support a stable Bose-Einstein condensate. Repulsive contact interaction among the condensed bosons induces a spontaneou… ▽ More We investigate the interaction-driven instability of a quadratic band crossing arising for ultracold bosonic atoms loaded into a two-dimensional optical lattice. We consider the case when the degenerate point becomes a local minimum of both crossing energy bands such that it can support a stable Bose-Einstein condensate. Repulsive contact interaction among the condensed bosons induces a spontaneously time-reversal symmetry broken superfluid phase and a topological gap is opened in the excitation spectrum. We propose two concrete realizations of the desired quadratic band crossing in lattices with either fourfold or sixfold rotational symmetries via suitable tuning of the unit cell leading to reduced Brillouin zones and correspondingly folded bands. In either case, topologically protected edge excitations are found for a finite system. △ Less

Submitted 9 April, 2018; originally announced April 2018.

Comments: 6+6 pages, 4+4 figures

Journal ref: Phys. Rev. A 98, 053617 (2018)

Magnetic-field enhanced high-thermoelectric performance in topological Dirac semimetal Cd$_3$As$_2$ crystal

Authors: H. H. Wang, X. G. Luo, W. W. Chen, N. Z. Wang, B. Lei, F. B. Meng, C. Shang, L. K. Ma, T. Wu, X. Dai, Z. F. Wang, X. H. Chen

Abstract: Thermoelectric materials can be used to convert heat to electric power through the Seebeck effect. We study magneto-thermoelectric figure of merit (ZT) in three-dimensional Dirac semimetal Cd$_3$As$_2$ crystal. It is found that enhancement of power factor and reduction of thermal conductivity can be realized at the same time through magnetic field although magnetoresistivity is greatly increased.… ▽ More Thermoelectric materials can be used to convert heat to electric power through the Seebeck effect. We study magneto-thermoelectric figure of merit (ZT) in three-dimensional Dirac semimetal Cd$_3$As$_2$ crystal. It is found that enhancement of power factor and reduction of thermal conductivity can be realized at the same time through magnetic field although magnetoresistivity is greatly increased. ZT can be highly enhanced from 0.17 to 1.1 by more than six times around 350 K under a perpendicular magnetic field of 7 Tesla. The huge enhancement of ZT by magnetic field arises from the linear Dirac band with large Fermi velocity and the large electric thermal conductivity in Cd$_3$As$_2$. Our work paves a new way to greatly enhance the thermoelectric performance in the quantum topological materials. △ Less

Submitted 21 February, 2018; originally announced February 2018.

Comments: 25 pages, 4 figures, supplementary materials file is not included

Strong indirect coupling between graphene-based mechanical resonators via a phonon cavity

Authors: Gang Luo, Zhuo-Zhi Zhang, Guang-Wei Deng, Hai-Ou Li, Gang Cao, Ming Xiao, Guang-Can Guo, Lin Tian, Guo-** Guo

Abstract: Mechanical resonators are promising systems for storing and manipulating information. To transfer information between mechanical modes, either direct coupling or an interface between these modes is needed. In previous works, strong coupling between different modes in a single mechanical resonator and direct interaction between neighboring mechanical resonators have been demonstrated. However, coup… ▽ More Mechanical resonators are promising systems for storing and manipulating information. To transfer information between mechanical modes, either direct coupling or an interface between these modes is needed. In previous works, strong coupling between different modes in a single mechanical resonator and direct interaction between neighboring mechanical resonators have been demonstrated. However, coupling between distant mechanical resonators, which is a crucial request for long-distance classical and quantum information processing using mechanical devices, remains an experimental challenge. Here, we report the experimental observation of strong indirect coupling between separated mechanical resonators in a graphene-based electromechanical system. The coupling is mediated by a far-off-resonant phonon cavity through virtual excitations via a Raman-like process. By controlling the resonant frequency of the phonon cavity, the indirect coupling can be tuned in a wide range. Our results may lead to the development of gate-controlled all-mechanical devices and open up the possibility of long-distance quantum mechanical experiments. △ Less

Submitted 26 January, 2018; originally announced January 2018.

Journal ref: Nature Communications 9, 383 (2018)

Integer quantum Hall effect and topological phase transitions in silicene

Authors: Y. L. Liu, G. X. Luo, N. Xu, H. Y. Tian, C. D. Ren

Abstract: We numerically investigate the effects of disorder on the quantum Hall effect (QHE) and the quantum phase transitions in silicene based on a lattice model. It is shown that for a clean sample, silicene exhibits an unconventional QHE near the band center, with plateaus develo** at $ν=0,\pm2,\pm6,\ldots,$ and a conventional QHE near the band edges. In the presence of disorder, the Hall plateaus ca… ▽ More We numerically investigate the effects of disorder on the quantum Hall effect (QHE) and the quantum phase transitions in silicene based on a lattice model. It is shown that for a clean sample, silicene exhibits an unconventional QHE near the band center, with plateaus develo** at $ν=0,\pm2,\pm6,\ldots,$ and a conventional QHE near the band edges. In the presence of disorder, the Hall plateaus can be destroyed through the float-up of extended levels toward the band center, in which higher plateaus disappear first. However, the center $ν=0$ Hall plateau is more sensitive to disorder and disappears at a relatively weak disorder strength. Moreover, the combination of an electric field and the intrinsic spin-orbit interaction (SOI) can lead to quantum phase transitions from a topological insulator to a band insulator at the charge neutrality point (CNP), accompanied by additional quantum Hall conductivity plateaus. △ Less

Submitted 14 December, 2017; originally announced December 2017.

Comments: 7 pages, 4 figures

Journal ref: Condens. Matter Phys., 2017, vol. 20, No. 4, 43701

Transition state redox during dynamical processes in semiconductors and insulators

Authors: Guangfu Luo, Thomas F. Kuech, Dane Morgan

Abstract: Activation barriers associated with ion diffusion and chemical reactions are vital to understand and predict a wide range of phenomena, such as material growth, ion transport, and catalysis. In the calculation of activation barriers for non-redox processes in semiconductors and insulators, it has been widely assumed that the charge state remains fixed to that of the initial electronic ground state… ▽ More Activation barriers associated with ion diffusion and chemical reactions are vital to understand and predict a wide range of phenomena, such as material growth, ion transport, and catalysis. In the calculation of activation barriers for non-redox processes in semiconductors and insulators, it has been widely assumed that the charge state remains fixed to that of the initial electronic ground state throughout a dynamical process. In this work, we demonstrate that this assumption is generally inaccurate and that a rate-limiting transition state can have a different charge state from the initial ground state. This phenomenon can significantly lower the activation barrier of dynamical process that depends strongly on charge state, such as carbon vacancy diffusion in 4H-SiC. With inclusion of such transition state redox, the activation barrier varies continuously with Fermi level, in contrast to the step-line feature predicted by the traditional fixed-charge assumption. In this study, a straightforward approach to include the transition state redox effect is provided, the typical situations where the effect plays a significant role are identified, and the relevant electron dynamics are discussed. △ Less

Submitted 5 December, 2017; originally announced December 2017.

Journal ref: J. Chem. Phys. 158, 074105 (2023)

The perfect spin injection in silicene FS/NS junction

Authors: H. -Y. Tian, N. Xu, G. Luo, Ch. -D. Ren

Abstract: We theoretically investigate the spin injection from a ferromagnetic silicene to a normal silicene (FS/NS), where the magnetization in the FS is assumed from the magnetic proximity effect. Based on a silicene lattice model, we demonstrated that the pure spin injection could be obtained by tuning the Fermi energy of two spin species, where one is in the spin orbit coupling gap and the other one is… ▽ More We theoretically investigate the spin injection from a ferromagnetic silicene to a normal silicene (FS/NS), where the magnetization in the FS is assumed from the magnetic proximity effect. Based on a silicene lattice model, we demonstrated that the pure spin injection could be obtained by tuning the Fermi energy of two spin species, where one is in the spin orbit coupling gap and the other one is outside the gap. Moreover, the valley polarity of the spin species can be controlled by a perpendicular electric field in the FS region. Our findings may shed light on making silicene-based spin and valley devices in the spintronics and valleytronics field. △ Less

Submitted 22 June, 2017; originally announced June 2017.

Comments: 6 pages, 3 figures

Journal ref: Condens. Matter Phys., vol. 20, No. 2, 23702 (2017)

Ab-initio modeling of electrolyte molecule Ethylene Carbonate decomposition reaction on Li(Ni,Mn,Co)O2 cathode surface

Authors: Shenzhen Xu, Guangfu Luo, Ryan Jacobs, Shuyu Fang, Mahesh K. Mahanthappa, Robert J. Hamers, Dane Morgan

Abstract: Electrolyte decomposition reactions on Li-ion battery electrodes contribute to the formation of solid electrolyte interphase (SEI) layers. These SEI layers are one of the known causes for the loss in battery voltage and capacity over repeated charge/discharge cycles. In this work, density functional theory (DFT)-based ab-initio calculations are applied to study the initial steps of the decompositi… ▽ More Electrolyte decomposition reactions on Li-ion battery electrodes contribute to the formation of solid electrolyte interphase (SEI) layers. These SEI layers are one of the known causes for the loss in battery voltage and capacity over repeated charge/discharge cycles. In this work, density functional theory (DFT)-based ab-initio calculations are applied to study the initial steps of the decomposition of the organic electrolyte component ethylene carbonate (EC) on the (10-14) surface of a layered Li(Nix,Mny,Co1-x-y)O2 (NMC) cathode crystal, which is commonly used in commercial Li-ion batteries. The effects on the EC reaction pathway due to dissolved Li+ ions in the electrolyte solution and different NMC cathode surface terminations containing absorbed hydroxyl -OH or fluorine -F species are explicitly considered. We predict a very fast chemical reaction consisting of an EC ring-opening process on the bare cathode surface, the rate of which is independent of the battery operation voltage. This EC ring-opening reaction is unavoidable once the cathode material contacts with the electrolyte because this process is purely chemical rather than electrochemical in nature. The -OH and -F adsorbed species display a passivation effect on the surface against the reaction with EC, but the extent is limited except for the case of -OH bonded to a surface transition metal atom. Our work implies that the possible rate-limiting steps of the electrolyte molecule decomposition are the reactions on the decomposed organic products on the cathode surface rather than on the bare cathode surface. △ Less

Submitted 19 June, 2017; originally announced June 2017.

Comments: ACS Applied Materials and Interfaces, 2017

Breakdown of single spin-fluid model in heavily hole-doped superconductor CsFe2As2

Authors: D. Zhao, S. J. Li, N. Z. Wang, J. Li, D. W. Song, L. X. Zheng, L. P. Nie, X. G. Luo, T. Wu, X. H. Chen

Abstract: Although Fe-based superconductors are multiorbital correlated electronic systems, previous nuclei magnetic resonance (NMR) measurement suggests that a single spin-fluid model is sufficient to describe its spin behavior. Here, we firstly observed the breakdown of single spin-fluid model in a heavily hole-doped Fe-based superconductor CsFe2As2 by site-selective NMR measurement. At high temperature r… ▽ More Although Fe-based superconductors are multiorbital correlated electronic systems, previous nuclei magnetic resonance (NMR) measurement suggests that a single spin-fluid model is sufficient to describe its spin behavior. Here, we firstly observed the breakdown of single spin-fluid model in a heavily hole-doped Fe-based superconductor CsFe2As2 by site-selective NMR measurement. At high temperature regime, both of Knight shift and nuclei spin-lattice relaxation at 133Cs and 75As nuclei exhibit distinct temperature-dependent behavior, suggesting the breakdown of single spin-fluid model in CsFe2As2. This is ascribed to the coexistence of both localized and itinerant spin degree of freedom at 3d orbits, which is consistent with orbital-selective Mott phase. However, single spin-fluid behavior is gradually recovered by develo** a coherent state among 3d orbits with decreasing temperature. A Kondo liquid scenario is proposed for the low-temperature coherent state. The present work sets strong constraint on the theoretical model for Fe-based superconductors. △ Less

Submitted 27 May, 2017; originally announced May 2017.

Comments: 5 pages, 3 figures, all comments are welcome

Journal ref: Phys. Rev. B 97, 045118 (2018)

Large magnetic anisotropy in $Fe_xTaS_2$ single crystals

Authors: G. Wu, B. L. Kang, Y. L. Li, T. Wu, N. Z. Wang, X. G. Luo, Z. Sun, L. J. Zou, X. H. Chen

Abstract: In intercalated transition metal dichalcogenide $Fe_xTaS_2$ (0.2 $\leq$ x $\leq$ 0.4) single crystals, large magnetic anisotropy is observed. Transport property measurements indicate that heavy Fe-do** leads to a large anisotropy of resistivity ($ρ$$_{c}$/$ρ$$_{ab}$). A sharp M-H hysteresis curve is observed with magnetic field along c-axis, while a linear magnetization appears with magnetic fie… ▽ More In intercalated transition metal dichalcogenide $Fe_xTaS_2$ (0.2 $\leq$ x $\leq$ 0.4) single crystals, large magnetic anisotropy is observed. Transport property measurements indicate that heavy Fe-do** leads to a large anisotropy of resistivity ($ρ$$_{c}$/$ρ$$_{ab}$). A sharp M-H hysteresis curve is observed with magnetic field along c-axis, while a linear magnetization appears with magnetic field applied in the ab-plane. The angular dependent magnetic susceptibility from in-plane to out-of-plane indicates that magnetic moments are strongly pinned along the c-axis in an unconventional manner and the coercive field reaches as large as 6 T at T = 5 K. First-principles calculation clearly suggests that the strong spin-orbital coupling give rise to such a large anisotropy of magnetism. The strong pinning effect of magnetic moments along c-axis makes this material a very promising candidate for the development of spin-aligner in spintronics devices. △ Less

Submitted 8 May, 2017; originally announced May 2017.

Comments: 5 pages, 4 figures

Electrotunable artificial molecules based on van der Waals heterostructures

Authors: Zhuo-Zhi Zhang, Xiang-Xiang Song, Gang Luo, Guang-Wei Deng, Vahid Mosallanejad, Takashi Taniguchi, Kenji Watanabe, Hai-Ou Li, Gang Cao, Guang-Can Guo, Franco Nori, Guo-** Guo

Abstract: Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices, including detecting and manipulating either single-electron charging behavior or spin and valley degrees of freedom. However, the most popular model systems, cons… ▽ More Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices, including detecting and manipulating either single-electron charging behavior or spin and valley degrees of freedom. However, the most popular model systems, consisting of tunable double-quantum-dot molecules, are still extremely difficult to realize in these materials. We show that an artificial molecule can be reversibly formed in atomically thin MoS2 sandwiched in hexagonal boron nitride, with each artificial atom controlled separately by electrostatic gating. The extracted values for coupling energies at different regimes indicate a single-electron transport behavior, with the coupling strength between the quantum dots tuned monotonically. Moreover, in the low-density regime, we observe a decrease of the conductance with magnetic field, suggesting the observation of Coulomb blockade weak anti-localization. Our experiments demonstrate for the first time the realization of an artificial quantum-dot molecule in a gated MoS2 van der Waals heterostructure, which could be used to investigate spin-valley physics. The compatibility with large-scale production, gate controllability, electron-hole bipolarity, and new quantum degrees of freedom in the family of 2D materials opens new possibilities for quantum electronics and its applications. △ Less

Submitted 16 October, 2017; v1 submitted 22 April, 2017; originally announced April 2017.

Journal ref: Science Advances 3: e1701699 (2017)

Coupling graphene nanomechanical motion to a single-electron transistor

Authors: Gang Luo, Zhuo-Zhi Zhang, Guang-Wei Deng, Hai-ou Li, Gang Cao, Ming Xiao, Guo** Guo, Guang-Can Guo

Abstract: Graphene-based electromechanical resonators have attracted much interest recently because of the outstanding mechanical and electrical properties of graphene and their various applications. However, the coupling between mechanical motion and charge transport has not been explored in graphene. Here, we studied the mechanical properties of a suspended 50-nm-wide graphene nanoribbon, which also acts… ▽ More Graphene-based electromechanical resonators have attracted much interest recently because of the outstanding mechanical and electrical properties of graphene and their various applications. However, the coupling between mechanical motion and charge transport has not been explored in graphene. Here, we studied the mechanical properties of a suspended 50-nm-wide graphene nanoribbon, which also acts as a single-electron transistor (SET) at low temperature. Using the SET as a sensitive detector, we found that the resonance frequency could be tuned from 82 MHz to 100 MHz and the quality factor exceeded 30000. The strong charge-mechanical coupling was demonstrated by observing the SET induced ~140 kHz resonance frequency shifts and mechanical dam**. We also found that the SET can enhance the nonlinearity of the resonator. Our SET-coupled graphene mechanical resonator could approach an ultra-sensitive mass resolution of ~0.55*10^(-21) g and a force sensitivity of ~1.9*10^(-19) N/(Hz)^(1/2), and can be further improved. These properties indicate that our device is a good platform both for fundamental physical studies and potential applications. △ Less

Submitted 24 March, 2017; originally announced March 2017.

Journal ref: Nanoscale, 2017,9, 5608-5614

Tuning electronic properties of FeSe$_{0.5}$Te$_{0.5}$ thin flakes by a novel field effect transistor

Authors: C. S. Zhu, J. H. Cui, B. Lei, N. Z. Wang, C. Shang, F. B. Meng, L. K. Ma, X. G. Luo, T. Wu, Z. Sun, X. H. Chen

Abstract: Using a field-effect transistor (FET) configuration with solid Li-ion conductor (SIC) as gate dielectric, we have successfully tuned carrier density in FeSe$_{0.5}$Te$_{0.5}$ thin flakes, and the electronic phase diagram has been mapped out. It is found that electron do** controlled by SIC-FET leads to a suppression of the superconducting phase, and eventually gives rise to an insulating state i… ▽ More Using a field-effect transistor (FET) configuration with solid Li-ion conductor (SIC) as gate dielectric, we have successfully tuned carrier density in FeSe$_{0.5}$Te$_{0.5}$ thin flakes, and the electronic phase diagram has been mapped out. It is found that electron do** controlled by SIC-FET leads to a suppression of the superconducting phase, and eventually gives rise to an insulating state in FeSe$_{0.5}$Te$_{0.5}$. During the gating process, the (001) peak in XRD patterns stays at the same position and no new diffraction peak emerges, indicating no evident Li$^+$ ions intercalation into the FeSe$_{0.5}$Te$_{0.5}$. It indicates that a systematic change of electronic properties in FeSe$_{0.5}$Te$_{0.5}$ arises from the electrostatic do** induced by the accumulation of Li$^+$ ions at the interface between FeSe$_{0.5}$Te$_{0.5}$ and solid ion conductor in the devices. It is striking that these findings are drastically different from the observation in FeSe thin flakes using the same SIC-FET, in which $T_c$ is enhanced from 8 K to larger than 40 K, then the system goes into an insulating phase accompanied by structural transitions. △ Less

Submitted 21 January, 2017; originally announced January 2017.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 95, 174513 (2017)

Quantum dot behavior in transition metal dichalcogenides nanostructures

Authors: Gang Luo, Zhuo-Zhi Zhang, Hai-Ou Li, Xiang-Xiang Song, Guang-Wei Deng, Gang Cao, Ming Xiao, Guo-** Guo

Abstract: Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition… ▽ More Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confinement and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties. △ Less

Submitted 14 January, 2017; v1 submitted 29 December, 2016; originally announced December 2016.

Comments: Submitted to Frontiers of Physics as a review

Journal ref: Frontiers of Physics 12, 128502 (2017)

Reemergeing electronic nematicity in heavily hole-doped Fe-based superconductors

Authors: J. Li, D. Zhao, Y. P. Wu, S. J. Li, D. W. Song, L. X. Zheng, N. Z. Wang, X. G. Luo, Z. Sun, T. Wu, X. H. Chen

Abstract: In correlated electrons system, quantum melting of electronic crystalline phase often gives rise to many novel electronic phases. In cuprates superconductors, melting the Mott insulating phase with carrier do** leads to a quantum version of liquid crystal phase, the electronic nematicity, which breaks the rotational symmetry and exhibits a tight twist with high-temperature superconductivity. Rec… ▽ More In correlated electrons system, quantum melting of electronic crystalline phase often gives rise to many novel electronic phases. In cuprates superconductors, melting the Mott insulating phase with carrier do** leads to a quantum version of liquid crystal phase, the electronic nematicity, which breaks the rotational symmetry and exhibits a tight twist with high-temperature superconductivity. Recently, the electronic nematicity has also been observed in Fe-based superconductors. However, whether it shares a similar scenario with its cuprates counterpart is still elusive. Here, by measuring nuclear magnetic resonance in CsFe2As2, a prototypical Fe-based superconductor perceived to have evolved from a Mott insulating phase at 3d5 configuration, we report anisotropic quadruple broadening effect as a direct result of local rotational symmetry breaking. For the first time, clear connection between the Mott insulating phase and the electronic nematicity can be established and generalized to the Fe-based superconductors. This finding would promote a universal understanding on electronic nematicity and its relation with high-temperature superconductivity. △ Less

Submitted 14 November, 2016; originally announced November 2016.

Comments: 14 pages, 4 figures

Observation of Ultrahigh Mobility Surface States in a Topological Crystalline Insulator by Infrared Spectroscopy

Authors: Ying Wang, Guoyu Luo, Junwei Liu, R. Sankar, Nan-Lin Wang, Fangcheng Chou, Liang Fu, Zhiqiang Li

Abstract: Topological crystalline insulators (TCIs) possess metallic surface states protected by crystalline symmetry, which are a versatile platform for exploring topological phenomena and potential applications. However, progress in this field has been hindered by the challenge to probe optical and transport properties of the surface states owing to the presence of bulk carriers. Here we report infrared (… ▽ More Topological crystalline insulators (TCIs) possess metallic surface states protected by crystalline symmetry, which are a versatile platform for exploring topological phenomena and potential applications. However, progress in this field has been hindered by the challenge to probe optical and transport properties of the surface states owing to the presence of bulk carriers. Here we report infrared (IR) reflectance measurements of a TCI, (001) oriented $Pb_{1-x}Sn_{x}Se$ in zero and high magnetic fields. We demonstrate that the far-IR conductivity is unexpectedly dominated by the surface states as a result of their unique band structure and the consequent small IR penetration depth. Moreover, our experiments yield a surface mobility of 40000 $cm^{2}/(Vs)$, which is one of the highest reported values in topological materials, suggesting the viability of surface-dominated conduction in thin TCI crystals. These findings pave the way for exploring many exotic transport and optical phenomena and applications predicted for TCIs. △ Less

Submitted 16 October, 2017; v1 submitted 14 November, 2016; originally announced November 2016.

Journal ref: Nature Communications 8, 366 (2017)

Understanding and reducing deleterious defects in metastable alloy GaAsBi

Authors: Guangfu Luo, Shujiang Yang, Glen R. Jenness, Zhewen Song, Thomas F. Kuech, Dane Morgan

Abstract: Technological applications of novel metastable materials are frequently inhibited by abundant defects residing in these materials. Using first-principles methods we investigate the point defect thermodynamics and phase segregation in the technologically-important metastable alloy GaAsBi. Our calculations predict defect energy levels in good agreement with abundant previous experiments and clarify… ▽ More Technological applications of novel metastable materials are frequently inhibited by abundant defects residing in these materials. Using first-principles methods we investigate the point defect thermodynamics and phase segregation in the technologically-important metastable alloy GaAsBi. Our calculations predict defect energy levels in good agreement with abundant previous experiments and clarify the defect structures giving rise to these levels. We find that vacancies in some charge states become metastable or unstable with respect to antisite formation, and this instability is a general characteristic of zincblende semiconductors with small ionicity. The dominant point defects degrading electronical and optical performances are predicted to be As$_G$$_a$, Bi$_G$$_a$, Bi$_G$$_a$+Bi$_A$$_s$, As$_G$$_a$+Bi$_A$$_s$, V$_G$$_a$ and V$_G$$_a$+Bi$_A$$_s$, of which the first-four and second-two defects are minority-electron and minority-hole traps, respectively. V$_G$$_a$ is also found to play a critical role in controlling the metastable Bi supersaturation through mediating Bi diffusion and clustering. To reduce the influences of these deleterious defects, we suggest shifting the growth away from As-rich condition and/or using hydrogen passivation to reduce the minority-carrier traps. We expect this work to aid in the applications of GaAsBi to novel electronic and optoelectronic devices, and shine a light on controlling the deleterious defects in other metastable materials. △ Less

Submitted 9 November, 2016; originally announced November 2016.

Journal ref: NPG Asia Materials 9, e345 (2017)

Tuning phase transitions of FeSe thin flakes by field effect transistor with solid ion conductor as gate dielectric

Authors: B. Lei, N. Z. Wang, C. Shang, F. B. Meng, L. K. Ma, X. G. Luo, T. Wu, Z. Sun, Y. Wang, Z. Jiang, B. H. Mao, Z. Liu, Y. J. Yu, Y. B. Zhang, X. H. Chen

Abstract: We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control the material properties and its phase transitions. A dome-shaped superconducting phase diagram was mapped out with increasing Li content, with $T_c$ $\sim$ 46.6… ▽ More We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control the material properties and its phase transitions. A dome-shaped superconducting phase diagram was mapped out with increasing Li content, with $T_c$ $\sim$ 46.6 K for the optimal do**, and an insulating phase was reached at the extremely overdoped regime. Our study suggests that, using solid ion conductor as a gate dielectric, the SIC-FET device can achieve much higher carrier do** in the bulk, and suit many surface sensitive experimental probes, and can stabilize novel structural phases that are inaccessible in ordinary conditions. △ Less

Submitted 25 September, 2016; originally announced September 2016.

Comments: 6 pages, 4 figure. Supplementary information is not included

Magnetic-anisotropy induced spin blockade in a single-molecule transistor

Authors: Guangpu Luo, Kyungwha Park

Abstract: We present a new mechanism for a spin blockade effect associated with a change in the type of magnetic anisotropy over oxidation state in a single molecule transistor, by taking an example of an individual Eu$_{2}$(C$_{8}$H$_{8}$)$_{3}$ molecule weakly coupled to non-magnetic electrodes without linker groups. The molecule switches its magnetization direction from in-plane to out-of-plane when it i… ▽ More We present a new mechanism for a spin blockade effect associated with a change in the type of magnetic anisotropy over oxidation state in a single molecule transistor, by taking an example of an individual Eu$_{2}$(C$_{8}$H$_{8}$)$_{3}$ molecule weakly coupled to non-magnetic electrodes without linker groups. The molecule switches its magnetization direction from in-plane to out-of-plane when it is charged. In other words, the magnetic anisotropy of the molecule changes from easy plane to easy axis when the molecule is charged. By solving the master equation based on model Hamiltonian, we find that current through the molecule is highly suppressed at low bias independently of gate voltage due to the interplay between spin selection rules and the change in the type of magnetic anisotropy. Transitions between the lowest magnetic levels in successive charge states are forbidden because the magnetic levels differ by $|ΔM| > 1/2$ due to the change in the type of magnetic anisotropy, although the total spins differ by $|ΔS|=1/2$. This current suppression can be lifted by significant B field, and the threshold B field varies as a function of the field direction and the strength of magnetic anisotropy. The spin blockade effect shed light on switching the magnetization direction by non-spin-polarized current and on exploring effects of this property coupled to other molecular degrees of freedom. △ Less

Submitted 16 September, 2016; originally announced September 2016.

First-principles Predictions of Electronic Properties of GaAs1-x-yPyBix and GaAs1-x-yPyBix-based Heterojunctions

Authors: Guangfu Luo, Kamran Forghani, Thomas F. Kuech, Dane Morgan

Abstract: Significant efficiency droop is a major concern for light-emitting diodes and laser diodes operating at high current density. Recent study has suggested that heavily Bi-alloyed GaAs can decrease the non-radiative Auger recombination and therefore alleviate the efficiency droop. Using density functional theory, we studied a newly fabricated quaternary alloy, GaAs1-x-yPyBix, which can host significa… ▽ More Significant efficiency droop is a major concern for light-emitting diodes and laser diodes operating at high current density. Recent study has suggested that heavily Bi-alloyed GaAs can decrease the non-radiative Auger recombination and therefore alleviate the efficiency droop. Using density functional theory, we studied a newly fabricated quaternary alloy, GaAs1-x-yPyBix, which can host significant amounts of Bi, through calculations of its band gap, spin-orbit splitting, and band offsets with GaAs. We found that the band gap changes of GaAs1-x-yPyBix relative to GaAs are determined mainly by the local structural changes around P and Bi atoms rather than their electronic structure differences. To obtain alloy with lower Auger recombination than GaAs bulk, we identified the necessary constraints on the compositions of P and Bi. Finally, we demonstrated that GaAs/GaAs1-x-yPyBix heterojunctions with potentially low Auger recombination can exhibit small lattice mismatch and large enough band offsets for strong carrier confinement. This work shows that the electronic properties of GaAs1-x-yPyBix are potentially suitable for high-energy infrared light-emitting diodes and laser diodes with improved efficiency. △ Less

Submitted 16 September, 2016; v1 submitted 1 September, 2016; originally announced September 2016.

Journal ref: Appl. Phys. Lett. 109, 112104 (2016)

The identification of the dominant donors in low temperature grown InPBi materials

Authors: G. N. Wei, D. Xing, Q. Feng, W. G. Luo, Y. Y. Li, K. Wang, L. Y. Zhang, W. W. Pan, S. M. Wang, S. Y. Yang, K. Y. Wang

Abstract: Combined with magnetotransport measurements and first-principles calculations, we systematically investigated the effects of Bi incorporation on the electrical properties of the undoped InP1-xBix epilayers with 0<x<2.41%. The Hall-bar measurements reveal a dominant n-type conductivity of the InPBi samples. The electron concentrations are found to decrease firstly as x increases up to x=1.83%, and… ▽ More Combined with magnetotransport measurements and first-principles calculations, we systematically investigated the effects of Bi incorporation on the electrical properties of the undoped InP1-xBix epilayers with 0<x<2.41%. The Hall-bar measurements reveal a dominant n-type conductivity of the InPBi samples. The electron concentrations are found to decrease firstly as x increases up to x=1.83%, and then increase again with further increasing Bi composition, whiles the electron mobility shows an inverse variation to the electron concentration. First-principle calculations suggest that both the phosphorus antisites and vacancy defects are the dominant donors responsible for the high electron concentration. And their defect concentrations show different behaviors as Bi composition x increases, resulting in a nonlinear relationship between electron concentration and Bi composition in InPBi alloys. △ Less

Submitted 29 March, 2016; originally announced March 2016.

Comments: 17 pages, 4 figures, 1 table

Do** evolution of the superconducting gap structure in the underdoped iron arsenide Ba1-xKxFe2As2 revealed by thermal conductivity

Authors: J. -Ph. Reid, M. A. Tanatar, X. G. Luo, H. Shakeripour, S. René de Cotret, A. Juneau-Fecteau, J. Chang, B. Shen, H. -H. Wen, H. Kim, R. Prozorov, N. Doiron-Leyraud, Louis Taillefer

Abstract: The thermal conductivity kappa of the iron-arsenide superconductor Ba1-xKxFe2As2 was measured for heat currents parallel and perpendicular to the tetragonal c axis at temperatures down to 50 mK and in magnetic fields up to 15 T. Measurements were performed on samples with compositions ranging from optimal do** (x = 0.34; Tc = 39 K) down to do**s deep into the region where antiferromagnetic ord… ▽ More The thermal conductivity kappa of the iron-arsenide superconductor Ba1-xKxFe2As2 was measured for heat currents parallel and perpendicular to the tetragonal c axis at temperatures down to 50 mK and in magnetic fields up to 15 T. Measurements were performed on samples with compositions ranging from optimal do** (x = 0.34; Tc = 39 K) down to do**s deep into the region where antiferromagnetic order coexists with superconductivity (x = 0.16; Tc = 7 K). In zero field, there is no residual linear term in kappa(T) as T goes to 0 at any do**, whether for in-plane or inter-plane transport. This shows that there are no nodes in the superconducting gap. However, as x decreases into the range of coexistence with antiferromagnetism, the residual linear term grows more and more rapidly with applied magnetic field. This shows that the superconducting energy gap develops minima at certain locations on the Fermi surface and these minima deepen with decreasing x. We propose that the minima in the gap structure arise when the Fermi surface of Ba1-xKxFe2As2 is reconstructed by the antiferromagnetic order. △ Less

Submitted 11 February, 2016; originally announced February 2016.

Journal ref: Phys. Rev. B 93, 214519 (2016)

Bismuth-content dependent of the polarized Raman spectra of the InPBi alloys

Authors: G. N. Wei, T. Q. Hai, Q. Feng, D. Xing, W. G. Luo, K. Wang, L. Y. Zhang, S. M. Wang, K. Y. Wang

Abstract: We have systematically investigated the optical properties of the InP1-xBix ternary alloys with 0<x<2.46%, using high resolution polarized Raman scattering measurement. Both InP-like and InBi-like optical vibration modes (LO) were identified in all the samples, suggesting most of the Bi-atoms are incorporated into the lattice sites to substitute P-atoms. And the intensity of the InBi-like Raman mo… ▽ More We have systematically investigated the optical properties of the InP1-xBix ternary alloys with 0<x<2.46%, using high resolution polarized Raman scattering measurement. Both InP-like and InBi-like optical vibration modes (LO) were identified in all the samples, suggesting most of the Bi-atoms are incorporated into the lattice sites to substitute P-atoms. And the intensity of the InBi-like Raman modes increase exponentially as Bi-content increasing. Linearly red-shift of the InP-like longitudinal optical vibration modes was observed to be 1.1 cm-1 of percent Bi, while that of the InP-like optical vibration overtones (2LO) were nearly doubled. In addition, through comparing the difference between the Z(X,X)Z and Z(X,Y)Z Raman spectra, Longitudinal Optical Plasmon Coupled (LOPC) modes are identified in all the samples, and their intensities are found to be proportional to the electron concentrations. △ Less

Submitted 14 December, 2015; originally announced December 2015.

Evolution of high-temperature superconductivity from low-Tc phase tuned by carrier concentration in FeSe thin flakes

Authors: B. Lei, J. H. Cui, Z. J. Xiang, C. Shang, N. Z. Wang, G. J. Ye, X. G. Luo, T. Wu, Z. Sun, X. H. Chen

Abstract: In contrast to bulk FeSe superconductor, heavily electron-doped FeSe-derived superconductors show relatively high Tc without hole Fermi surfaces and nodal superconducting gap structure, which pose great challenges on pairing theories in the iron-based superconductors. In the heavily electron-doped FeSe-based superconductors, the dominant factors and the exact working mechanism that is responsible… ▽ More In contrast to bulk FeSe superconductor, heavily electron-doped FeSe-derived superconductors show relatively high Tc without hole Fermi surfaces and nodal superconducting gap structure, which pose great challenges on pairing theories in the iron-based superconductors. In the heavily electron-doped FeSe-based superconductors, the dominant factors and the exact working mechanism that is responsible for the high Tc need to be clarified. In particular, a clean control of carrier concentration remains to be a challenge for revealing how superconductivity and Fermi surface topology evolves with carrier concentration in bulk FeSe. Here, we report the evolution of superconductivity in the FeSe thin flake with systematically regulated carrier concentrations by liquid-gating technique. High-temperature superconductivity at 48 K can be achieved only with electron do** tuned by gate voltage in FeSe thin flake with Tc less than 10 K. This is the first time to achieve such a high temperature superconductivity in FeSe without either epitaxial interface or external pressure. It definitely proves that the simple electron-do** process is able to induce high-temperature superconductivity with Tc as high as 48 K in bulk FeSe. Intriguingly, our data also indicates that the superconductivity is suddenly changed from low-Tc phase to high-Tc phase with a Lifshitz transition at certain carrier concentration. These results help us to build a unified picture to understand the high-temperature superconductivity among all FeSe-derived superconductors and shed light on further pursuit of higher Tc in these materials. △ Less

Submitted 2 September, 2015; originally announced September 2015.

Comments: 15 pages, 4 figures

Journal ref: Phys. Rev. Lett. 116, 077002 (2016)

Emergent Kondo scaling in iron-based superconductors AFe2As2 (A = K, Rb, Cs)

Authors: Y. P. Wu, D. Zhao, A. F. Wang, N. Z. Wang, Z. J. Xiang, X. G. Luo, T. Wu, X. H. Chen

Abstract: Unconventional superconductivity from heavy fermion (HF) is always observed in f-electron systems, in which Kondo physics between localized f-electrons and itinerant electrons plays an essential role. Whether HF superconductivity could be achieved in other systems without f electrons, especially for d-electron systems, is still elusive. Here, we experimentally study the origin of d-electron HF beh… ▽ More Unconventional superconductivity from heavy fermion (HF) is always observed in f-electron systems, in which Kondo physics between localized f-electrons and itinerant electrons plays an essential role. Whether HF superconductivity could be achieved in other systems without f electrons, especially for d-electron systems, is still elusive. Here, we experimentally study the origin of d-electron HF behavior in iron-based superconductors (FeSCs) AFe2As2 (A = K, Rb, Cs). Nuclear magnetic resonance on 75As reveals a universal coherent-incoherent crossover with a characteristic temperature T*. Below T*, a so-called 'Knight shift anomaly' is first observed in FeSCs, which exhibits a scaling behavior similar to f-electron HF materials. Furthermore, the scaling rule also regulates the manifestation of magnetic fluctuation. These results undoubtedly support an emergent Kondo scenario for the d-electron HF behavior, which suggests the AFe2As2 (A = K, Rb, Cs) as the first material realization of d-electron HF superconductors. △ Less

Submitted 21 November, 2015; v1 submitted 30 July, 2015; originally announced July 2015.

Comments: 15 pages, 4 figures, including supplementary information with 9 figures

Journal ref: Phys. Rev. Lett. 116, 147001 (2016)

Self-blocking of interstitial clusters near metallic grain boundaries

Authors: Xiangyan Li, Wei Liu, Yichun Xu, C. S. Liu, B. C. Pan, Yunfeng Liang, Q. F. Fang, Jun-Ling Chen, G. -N. Luo, Zhiguang Wang, Y. Dai

Abstract: Nano-crystallize materials have been known for decades to potentially owe the novel self-healing ability for radiation damage, which has been demonstrated to be especially linked to preferential occupation of interstitials at grain boundary (GB) and promoted vacancy-interstitial annihilation. A major obstacle to better understanding the healing property is the lack of an atomistic picture of the i… ▽ More Nano-crystallize materials have been known for decades to potentially owe the novel self-healing ability for radiation damage, which has been demonstrated to be especially linked to preferential occupation of interstitials at grain boundary (GB) and promoted vacancy-interstitial annihilation. A major obstacle to better understanding the healing property is the lack of an atomistic picture of the interstitial states near GBs, due to severely separation of the timescale of interstitial segregation from other events and abundance of interstitials at the GB. Here, we report a generic "self-blocking" effect of the interstitial cluster (SIAn) near the metallic GB in W, Mo and Fe. Upon creating a SIAn near the GB, it is immediately trapped by the GB during the GB structural relaxation and blocks there, impeding GB's further spontaneous trap** of the SIAn in the vicinity and making these SIAns stuck nearby the GB. The SIAn in the stuck state surprisingly owes an exceptionally larger number of annihilation sites with vacancies near the GB than the SIAn trapped at the GB due to maintaining its bulk configuration basically. Besides, it also has an unexpectedly long-ranged repelling interaction with the SIA in the bulk region, which may further affect the GB's trap of the SIAn. The self-blocking effect might shed light on more critical and extended role of the GB in healing radiation-damage in NCs than previously recognized the GB's limited role based on GB's trap for the SIA and resulted vacancy-SIA recombination. △ Less

Submitted 27 May, 2015; originally announced May 2015.

Comments: 29 pages, 6 figures

Formation of As-As Interlayer Bonding in the collapsed tetragonal phase of NaFe$_2$As$_2$ under pressure

Authors: Elissaios Stavrou, Xiao-Jia Chen, Artem R. Oganov, Aifeng. F. Wang, Yajun. Yan, Xigang. G. Luo, Xianhui. H. Chen, Alexander F. Goncharov

Abstract: NaFe$_2$As$_2$ is investigated experimentally using powder x-ray diffraction and Raman spectroscopy at pressures up to 23 GPa at room temperature and using ab-initio calculations. The results reveal a pressure-induced structural modification at 4 GPa from the starting tetragonal to a collapsed tetragonal phase. We determined the changes in interatomic distances under pressure that allowed us to co… ▽ More NaFe$_2$As$_2$ is investigated experimentally using powder x-ray diffraction and Raman spectroscopy at pressures up to 23 GPa at room temperature and using ab-initio calculations. The results reveal a pressure-induced structural modification at 4 GPa from the starting tetragonal to a collapsed tetragonal phase. We determined the changes in interatomic distances under pressure that allowed us to connect the structural changes and superconductivity. The transition is related to the formation of interlayer As-As bonds at the expense of weakening of Fe-As bonds in agreement with recent theoretical predictions. △ Less

Submitted 20 May, 2015; originally announced May 2015.

Comments: 14 Pages,8 figures

Pressure-induced Lifshitz transition in black phosphorus

Authors: Z. J. Xiang, G. J. Ye, C. Shang, B. Lei, N. Z. Wang, K. S. Yang, D. Y. Liu, F. B. Meng, X. G. Luo, L. J. Zou, Z. Sun, Y. B. Zhang, X. H. Chen

Abstract: In a semimetal, both electron and hole carriers contribute to the density of states at the Fermi level. The small band overlaps and multi-band effects give rise to many novel electronic properties, such as relativistic Dirac fermions with linear dispersion, titanic magnetoresistance and unconventional superconductivity. Black phosphorus has recently emerged as an exceptional semiconductor with hig… ▽ More In a semimetal, both electron and hole carriers contribute to the density of states at the Fermi level. The small band overlaps and multi-band effects give rise to many novel electronic properties, such as relativistic Dirac fermions with linear dispersion, titanic magnetoresistance and unconventional superconductivity. Black phosphorus has recently emerged as an exceptional semiconductor with high carrier mobility and a direct, tunable bandgap. Of particular importance is the search for exotic electronic states in black phosphorus, which may amplify the material's potential beyond semiconductor devices. Here we show that a moderate hydrostatic pressure effectively suppresses the band gap and induces a Lifshitz transition from semiconductor to semimetal in black phosphorus; a colossal magnetoresistance is observed in the semimetallic phase. Quantum oscillations in high magnetic field reveal the complex Fermi surface topology of the semimetallic black phosphorus. In particular, a Dirac-like fermion emerges at around 1.2 GPa, which is continuously tuned by external pressure. The observed semi-metallic behavior greatly enriches black phosphorus's material property, and sets the stage for the exploration of novel electronic states in this material. Moreover, these interesting behaviors make phosphorene a good candidate for the realization of a new two-dimensional relativistic electron system, other than graphene. △ Less

Submitted 4 December, 2015; v1 submitted 1 April, 2015; originally announced April 2015.

Comments: 5 pages, 4 figures in main text

Ultralow-frequency collective compression mode and strong interlayer coupling in multilayer black phosphorus

Authors: Shan Dong, Anmin Zhang, Kai Liu, Jianting Ji, Y. G. Ye, X. G. Luo, X. H. Chen, Xiaoli Ma, Yinghao Jie, Changfeng Chen, Xiaoqun Wang, Qingming Zhang

Abstract: The recent renaissance of black phosphorus (BP) as a two-dimensional 2D layered material has generated tremendous interest in its tunable electronic band gap and highly anisotropic transport properties that offer new opportunities for device applications. Many of these outstanding properties are attributed to its unique structural characters that still need elucidation. Here we show Raman measurem… ▽ More The recent renaissance of black phosphorus (BP) as a two-dimensional 2D layered material has generated tremendous interest in its tunable electronic band gap and highly anisotropic transport properties that offer new opportunities for device applications. Many of these outstanding properties are attributed to its unique structural characters that still need elucidation. Here we show Raman measurements that reveal an ultralow-frequency collective compression mode (CCM), which is unprecedented among similar 2D layered materials. This novel CCM indicates an unusually strong interlayer coupling in BP, which is quantitatively supported by a phonon frequency analysis and first-principles calculations. Moreover, the CCM and another branch of low-frequency Raman modes shift sensitively with changing number of layers, allowing an accurate determination of the thickness up to tens of atomic layers, which is considerably higher than those previously achieved by using high-frequency Raman modes. These results offer fundamental insights and practical tools for exploring multilayer BP in new device applications. △ Less

Submitted 13 June, 2015; v1 submitted 23 March, 2015; originally announced March 2015.

Comments: 19 pages, 4 figures, 1 table, 30 references, supplementary information included

Journal ref: Pays. Rev. lett. 116, 087401 (2016)