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Systematic Improvements in Transmon Qubit Coherence Enabled by Niobium Surface Encapsulation
Authors:
Mustafa Bal,
Akshay A. Murthy,
Shaojiang Zhu,
Francesco Crisa,
Xinyuan You,
Ziwen Huang,
Tanay Roy,
Jaeyel Lee,
David van Zanten,
Roman Pilipenko,
Ivan Nekrashevich,
Andrei Lunin,
Daniel Bafia,
Yulia Krasnikova,
Cameron J. Kopas,
Ella O. Lachman,
Duncan Miller,
Josh Y. Mutus,
Matthew J. Reagor,
Hilal Cansizoglu,
Jayss Marshall,
David P. Pappas,
Kim Vu,
Kameshwar Yadavalli,
**-Su Oh
, et al. (15 additional authors not shown)
Abstract:
We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigati…
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We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different cap** materials, such as tantalum, aluminum, titanium nitride, and gold, and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T$_1$ relaxation times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When cap** niobium with tantalum, we obtain median qubit lifetimes above 300 microseconds, with maximum values up to 600 microseconds, that represent the highest lifetimes to date for superconducting qubits prepared on both sapphire and silicon. Our comparative structural and chemical analysis suggests why amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.
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Submitted 24 January, 2024; v1 submitted 25 April, 2023;
originally announced April 2023.
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Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier
Authors:
V. A. Kulbachinskii,
I. S. Vasil'evskii,
R. A. Lunin,
G. Galistu,
A. de Visser,
G. B. Galiev,
S. S. Shirokov,
V. G. Mokerov
Abstract:
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si do** levels. The transport parameters are determined by resistivity measurements in the temperature range 4-300 K and magnetotransport in magnetic fields up to 12 T. The (subband) carrier concentrations and mobilities are extract…
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Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si do** levels. The transport parameters are determined by resistivity measurements in the temperature range 4-300 K and magnetotransport in magnetic fields up to 12 T. The (subband) carrier concentrations and mobilities are extracted from the Hall data and Shubnikov-de Haas oscillations. We find that the transport parameters are strongly affected by the insertion of the AlAs central barrier. Photoluminescence spectra, measured at 77 K, show an increase of the transition energies upon insertion of the barrier. The transport and optical data are analyzed with help of self-consistent calculations of the subband structure and envelope wave functions. Insertion of the AlAs central barrier changes the spatial distribution of the electron wave functions and leads to the formation of hybrid states, i.e. states which extend over the InGaAs and the delta-doped layer quantum wells.
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Submitted 12 July, 2006;
originally announced July 2006.
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New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime
Authors:
L. A. Ponomarenko,
D. T. N. de Lang,
A. de Visser,
D. Maude,
B. N. Zvonkov,
R. A. Lunin,
A. M. M. Pruisken
Abstract:
We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an exponential law, from which we extract critical exponents kappa = 0.54 and 0.58, in good agreement with the value (kappa = 0.57) previously obtained for an InGaAs/InP h…
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We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an exponential law, from which we extract critical exponents kappa = 0.54 and 0.58, in good agreement with the value (kappa = 0.57) previously obtained for an InGaAs/InP heterostructure. This provides evidence for a non-Fermi liquid critical exponent. By reversing the direction of the magnetic field we find that the averaged Hall resistance remains quantized at the plateau value h/e^2 through the PI transition. From the deviations of the Hall resistance from the quantized value, we obtain the corrections to scaling.
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Submitted 19 August, 2003;
originally announced August 2003.
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Optical and transport properties of short period InAs/GaAs superlattices near quantum dot formation
Authors:
V. A. Kulbachinskii,
R. A. Lunin,
V. A. Rogozin,
V. G. Mokerov,
Yu. V. Fedorov,
Yu. V. Khabarov,
A. de Visser
Abstract:
We have investigated the optical and transport properties of MBE grown short-period superlattices of InAs/GaAs with different numbers of periods (3 <= N <= 24) and a total thickness 14 nm. Bandstructure calculations show that these superlattices represent a quantum well with average composition In_0.16Ga_0.84As. The electron wave functions are only slightly modulated by the superlattice potentia…
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We have investigated the optical and transport properties of MBE grown short-period superlattices of InAs/GaAs with different numbers of periods (3 <= N <= 24) and a total thickness 14 nm. Bandstructure calculations show that these superlattices represent a quantum well with average composition In_0.16Ga_0.84As. The electron wave functions are only slightly modulated by the superlattice potential as compared to a single quantum well with the same composition, which was grown as a reference sample. The photoluminescence, the resistance, the Shubnikov-de Haas effect and the Hall effect have been measured as a function of the InAs layer thickness Q in the range 0.33 <= Q <= 2.7 monolayers (ML). The electron densities range from 6.8 to 11.5x10^11 cm^-2 for Q <= 2.0 ML. The photoluminescence and magnetotransport data show that only one subband is occupied. When Q >= 2.7 ML quantum dots are formed and the metallic type of conductivity changes to variable range hop** conductivity.
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Submitted 25 April, 2002;
originally announced April 2002.
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Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures
Authors:
V. A. Kulbachinskii,
V. G. Kytin,
A. V. Golikov,
R. A. Lunin,
R. T. F. van Schaijk,
A. de Visser,
A. P. Senichkin,
A. S. Bugaev
Abstract:
The photoconductivity of GaAs structures delta-doped by Sn has been investigated for wavelengths lambda= 650-1200 nm in the temperature interval T= 4.2-300 K. The electron densities and mobilities, before and after illumination, have been determined by magnetoresistance, Shubnikov-de Haas effect and Hall effect measurements, in high magnetic fields. For the heavily doped structures (n_H> 2x10^13…
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The photoconductivity of GaAs structures delta-doped by Sn has been investigated for wavelengths lambda= 650-1200 nm in the temperature interval T= 4.2-300 K. The electron densities and mobilities, before and after illumination, have been determined by magnetoresistance, Shubnikov-de Haas effect and Hall effect measurements, in high magnetic fields. For the heavily doped structures (n_H> 2x10^13 cm^-2) we observe under illumination by light with wavelengths larger than the band-gap wavelength of the host material (lambda= 815 nm at T= 4.2 K) first positive (PPPC) and then negative (NPPC) persistent photoconductivity. The NPPC is attributed to the ionisation of DX centres and PPPC is explained by the excitation of electrons from Cr impurity states in the substrate. For lambda< 815 nm in addition the excitation of electron over the band gap of GaAs contributes to the PPPC. For the lightly doped structures (n_H<= 2x10^13 cm^-2) the photoconductivity effect is always positive.
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Submitted 16 June, 2000; v1 submitted 14 September, 1999;
originally announced September 1999.
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Sn delta-do** in GaAs
Authors:
V. A. Kulbachinskii,
V. G. Kytin,
R. A. Lunin,
A. V. Golikov,
V. G. Mokerov,
A. S. Bugaev,
A. P. Senichkin,
R. T. F. van Schaijk,
A. de Visser,
P. M. Koenraad
Abstract:
We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn do** densities were characterised by magnetotransport experiments at low temperatures and in high magnetic fields up to 38 T. Hall-effect and Shubnikov-de Haas measurements show that the electron densities reached are higher th…
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We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn do** densities were characterised by magnetotransport experiments at low temperatures and in high magnetic fields up to 38 T. Hall-effect and Shubnikov-de Haas measurements show that the electron densities reached are higher than for other delta-dopants, like Si and Be. The maximum carrier density determined by the Hall effect equals 8.4x10^13 cm^-2. For all samples several Shubnikov-de Haas frequencies were observed, indicating the population of multiple subbands. The depopulation fields of the subbands were determined by measuring the magnetoresistance with the magnetic field in the plane of the delta-layer. The experimental results are in good agreement with selfconsistent bandstructure calculations. These calculation shows that in the sample with the highest electron density also the conduction band at the L point is populated.
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Submitted 20 July, 1999;
originally announced July 1999.
