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Tunable non-Lifshitz-Kosevich temperature dependence of Shubnikov-de Haas oscillation amplitudes in SmSb
Authors:
Wei Zhang,
C. N. Kuo,
S. T. Kuo,
Chun Wa So,
Jianyu Xie,
Kwing To Lai,
Wing Chi Yu,
C. S. Lue,
Hoi Chun Po,
Swee K. Goh
Abstract:
The Lifshitz-Kosevich (LK) theory is the pillar of magnetic quantum oscillations, which have been extensively applied to characterize a wide range of metallic states. In this study, we focus on the Shubnikov-de Haas (SdH) effect observed in SmSb, a rare-earth monopnictide. We observed a significant departure from the expected LK theory near $T_N=2.4$~K: both a peak-like anomaly and an enhancement…
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The Lifshitz-Kosevich (LK) theory is the pillar of magnetic quantum oscillations, which have been extensively applied to characterize a wide range of metallic states. In this study, we focus on the Shubnikov-de Haas (SdH) effect observed in SmSb, a rare-earth monopnictide. We observed a significant departure from the expected LK theory near $T_N=2.4$~K: both a peak-like anomaly and an enhancement in the temperature dependence of quantum oscillation amplitude are seen in SmSb. Moreover, we discovered a remarkable sensitivity of the SdH amplitudes to sample purity. By adjusting the sample purity, we were able to tune the temperature dependence of the $α$ band's SdH amplitudes from a peak-like anomalous behavior to an enhancement. Therefore, SdH oscillations from the $α$ band connect the two well-known non-LK behaviours, controllable through varying the sample purity, paving the way for develo** further understanding of the mechanism leading to the anomalous quantum oscillations.
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Submitted 10 October, 2023;
originally announced October 2023.
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Current direction dependent magnetotransport in CuTe
Authors:
Ying Kit Tsui,
C. N. Kuo,
C. E. Hsu,
Wei Zhang,
Wenyan Wang,
Shanmin Wang,
Wing Chi Yu,
H. C. Hsueh,
C. S. Lue,
Swee K. Goh
Abstract:
Despite being a layered, easily-exfoliated compound, copper monotelluride (CuTe) features an unusual quasi-one-dimensional charge density wave below $T_{\rm CDW}\approx335$ K. Within a CuTe layer, the electrical resistivity depends sensitively on the direction of the electrical current. Here, we use magnetotransport to probe the metallic state of CuTe with two distinct in-plane current directions.…
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Despite being a layered, easily-exfoliated compound, copper monotelluride (CuTe) features an unusual quasi-one-dimensional charge density wave below $T_{\rm CDW}\approx335$ K. Within a CuTe layer, the electrical resistivity depends sensitively on the direction of the electrical current. Here, we use magnetotransport to probe the metallic state of CuTe with two distinct in-plane current directions. When the current flows along the $a$-axis ($I//a$), the magnetoresistance exhibits a downward curvature as the magnetic field increases. On the other hand, when the current is along the $b$-axis ($I//b$), the magnetoresistance shows the opposite curvature. Our analysis uncovers a violation of Kohler scaling, but only for $I//a$. Shubnikov-de Haas oscillations are detected at low temperatures. Our results shed light on the nature of the metallic state in CuTe with the development of the charge density wave.
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Submitted 4 October, 2023;
originally announced October 2023.
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Surface Second Harmonic Generation from Topological Dirac Semimetal PdTe$_2$
Authors:
Syed Mohammed Faizanuddin,
Ching-Hang Chien,
Yao-Jui Chan,
Si-Tong Liu,
Chia-Nung Kuo,
Chin Shuan Lue,
Yu-Chieh Wen
Abstract:
Recent experiments and calculations in topological semimetals have observed anomalously strong second-order optical nonlinearity, but yet whether the enhancement also occurs at surfaces of topological semimetals in general remains an open question. In this work, we tackle this problem by measuring polarization-dependent and rotational-anisotropy optical second harmonic generation (SHG) from centro…
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Recent experiments and calculations in topological semimetals have observed anomalously strong second-order optical nonlinearity, but yet whether the enhancement also occurs at surfaces of topological semimetals in general remains an open question. In this work, we tackle this problem by measuring polarization-dependent and rotational-anisotropy optical second harmonic generation (SHG) from centrosymmetric type-II Dirac semimetal PdTe$_2$. We found the SHG to follow C$_{3v}$ surface symmetry with a time-varying intensity dictated by the oxidation kinetics of the material after its surface cleavage, indicating the surface origin of SHG. Quantitative characterization of the surface nonlinear susceptibility indicates a large out-of-plane response of PdTe$_2$ with $|χ_{ccc}^{(2)}|$ up to 25 $\times$ 10$^{-18}$ m$^2$/V. Our results support the topological surfaces/interfaces as a new route toward applications of nonlinear optical effects with released symmetry constraints, and demonstrate SHG as a viable means to in situ study of kinetics of topological surfaces.
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Submitted 17 August, 2023;
originally announced August 2023.
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Van der Waals device integration beyond the limits of van der Waals forces via adhesive matrix transfer
Authors:
Peter F. Satterthwaite,
Weikun Zhu,
Patricia Jastrzebska-Perfect,
Melbourne Tang,
Hongze Gao,
Hikari Kitadai,
Ang-Yu Lu,
Qishuo Tan,
Shin-Yi Tang,
Yu-Lun Chueh,
Chia-Nung Kuo,
Chin Shan Lue,
**g Kong,
Xi Ling,
Farnaz Niroui
Abstract:
Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to accommodate integration of arbitrary layers without solvents, sacrificial-layers or high-temperatures, steps that can introduce damage. To address these limita…
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Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to accommodate integration of arbitrary layers without solvents, sacrificial-layers or high-temperatures, steps that can introduce damage. To address these limitations, we introduce a single-step 2D material-to-device integration approach in which forces promoting transfer are decoupled from the vdW forces at the interface of interest. We use this adhesive matrix transfer to demonstrate conventionally-forbidden direct integration of diverse 2D materials (MoS2, WSe2, PtS2, GaS) with dielectrics (SiO2, Al2O3), and scalable, aligned heterostructure formation, both foundational to device development. We then demonstrate a single-step integration of monolayer-MoS2 into arrays of transistors. With no exposure to polymers or solvents, clean interfaces and pristine surfaces are preserved, which can be further engineered to demonstrate both n- and p-type behavior. Beyond serving as a platform to probe the intrinsic properties of sensitive nanomaterials without the influence of processing steps, our technique allows efficient formation of unconventional device form-factors, with an example of flexible transistors demonstrated.
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Submitted 12 February, 2023;
originally announced February 2023.
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Observation of highly anisotropic bulk dispersion and spin-polarized topological surface states in CoTe2
Authors:
Atasi Chakraborty,
Jun Fujii,
Chia-Nung Kuo,
Chin Shan Lue,
Antonio Politano,
Ivana Vobornik,
Amit Agarwal
Abstract:
We present CoTe2 as a new type-II Dirac semimetal supporting Lorentz symmetry violating Dirac fermions in the vicinity of the Fermi energy. By combining first principle ab-initio calculations with experimental angle-resolved photo-emission spectroscopy results, we show the CoTe2 hosts a pair of type-II Dirac fermions around 90 meV above the Fermi energy. In addition to the bulk Dirac fermions, we…
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We present CoTe2 as a new type-II Dirac semimetal supporting Lorentz symmetry violating Dirac fermions in the vicinity of the Fermi energy. By combining first principle ab-initio calculations with experimental angle-resolved photo-emission spectroscopy results, we show the CoTe2 hosts a pair of type-II Dirac fermions around 90 meV above the Fermi energy. In addition to the bulk Dirac fermions, we find several topological band inversions in bulk CoTe2, which gives rise to a ladder of spin-polarized surface states over a wide range of energies. In contrast to the surface states which typically display Rashba-type in-plane spin splitting, we find that CoTe2 hosts novel out-of-plane spin polarization as well. Our work establishes CoTe2 as a potential candidate for the exploration of Dirac fermiology and applications in spintronic devices, infrared plasmonics, and ultrafast optoelectronics.
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Submitted 27 January, 2023;
originally announced January 2023.
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Pressure-enhanced superconductivity in cage-type quasiskutterudite Sc5Rh6Sn18 single crystal
Authors:
Govindaraj Lingannan,
Boby Joseph,
Muthukumaran Sundaramoorthy,
Chia Nung Kuo,
Chin Shan Lue,
Sonachalam Arumugam
Abstract:
Sc5Rh6Sn18 with a cage-type quasiskutterudite crystal lattice and type II superconductivity, with superconducting transition temperature Tc = 4.99 K, was investigated under hydrostatic high-pressure (HP) using electrical transport, synchrotron X-ray diffraction (XRD) and Raman spectroscopy. Our data show that HP enhance the metallic nature and Tc of the system. Tc is found to show a continuous inc…
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Sc5Rh6Sn18 with a cage-type quasiskutterudite crystal lattice and type II superconductivity, with superconducting transition temperature Tc = 4.99 K, was investigated under hydrostatic high-pressure (HP) using electrical transport, synchrotron X-ray diffraction (XRD) and Raman spectroscopy. Our data show that HP enhance the metallic nature and Tc of the system. Tc is found to show a continuous increase reaching to 5.24 K at 2.5 GPa. Athough the system is metallic in nature, Raman spectroscopy investigations at ambient pressure revealed the presence of three weak modes at 165.97, 219.86 and 230.35 cm-1, mostly related to the rattling atom Sc. The HP-XRD data revealed that the cage structure was stable without any structural phase transition up to ~7 GPa. The lattice parameters and volume exhibited a smooth decrease without any anomalies as a function of pressure in this pressure range. In particular, a second order Birch-Murnaghan equation of state can describe the pressure dependence of the unit cell volume well, yielding a bulk modulus of ~ 97 GPa. HP Raman investigations revealed a linear shift of all the three Raman modes to higher wavenumbers with increasing pressure up to ~8 GPa. As the pressure enhances the bond overlap, thus inducing more electronic charges into the system, HP-XRD and Raman results may indciate the possibility of obtaining higher Tc with increasing pressures in this pressure range.
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Submitted 29 March, 2022; v1 submitted 12 February, 2022;
originally announced February 2022.
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Photonic Topological Transitions and Epsilon-Near-Zero Surface Plasmons in Type-II Dirac Semimetal NiTe$_2$
Authors:
Carlo Rizza,
Debasis Dutta,
Barun Ghosh,
Francesca Alessandro,
Chia-Nung Kuo,
Chin Shan Lue,
Lorenzo S. Caputi,
Arun Bansil,
Amit Agarwal,
Antonio Politano,
Anna Cupolillo
Abstract:
Compared to artificial metamaterials, where nano-fabrication complexities and finite-size inclusions can hamper the desired electromagnetic response, several natural materials like van der Waals crystals hold great promise for designing efficient nanophotonic devices in the optical range. Here, we investigate the unusual optical response of NiTe$_2$, a van der Waals crystal and a type-II Dirac sem…
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Compared to artificial metamaterials, where nano-fabrication complexities and finite-size inclusions can hamper the desired electromagnetic response, several natural materials like van der Waals crystals hold great promise for designing efficient nanophotonic devices in the optical range. Here, we investigate the unusual optical response of NiTe$_2$, a van der Waals crystal and a type-II Dirac semimetal hosting Lorentz-violating Dirac fermions. By {\it ab~initio~} density functional theory modeling, we show that NiTe$_2$ harbors multiple topological photonic regimes for evanescent waves (such as surface plasmons) across the near-infrared and optical range. By electron energy-loss experiments, we identify surface plasmon resonances near the photonic topological transition points at the epsilon-near-zero (ENZ) frequencies $\approx 0.79$, $1.64$, and $2.22$ eV. Driven by the extreme crystal anisotropy and the presence of Lorentz-violating Dirac fermions, the experimental evidence of ENZ surface plasmon resonances confirm the non-trivial photonic and electronic topology of NiTe$_2$. Our study paves the way for realizing devices for light manipulation at the deep-subwavelength scales based on electronic and photonic topological physics for nanophotonics, optoelectronics, imaging, and biosensing applications.
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Submitted 5 October, 2021;
originally announced October 2021.
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Linear magnetoresistance with a universal energy scale in a strong-coupling superconductor
Authors:
W. Zhang,
Y. J. Hu,
C. N. Kuo,
S. T. Kuo,
Yue-Wen Fang,
Kwing To Lai,
X. Y. Liu,
K. Y. Yip,
D. Sun,
F. F. Balakirev,
C. S. Lue,
Hanghui Chen,
Swee K. Goh
Abstract:
The recent discovery of a nonsaturating linear magnetoresistance in several correlated electron systems near a quantum critical point has revealed an interesting interplay between the linear magnetoresistance and the zero-field linear-in-temperature resistivity. These studies suggest a possible role of quantum criticality on the observed linear magnetoresistance. Here, we report our discovery of a…
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The recent discovery of a nonsaturating linear magnetoresistance in several correlated electron systems near a quantum critical point has revealed an interesting interplay between the linear magnetoresistance and the zero-field linear-in-temperature resistivity. These studies suggest a possible role of quantum criticality on the observed linear magnetoresistance. Here, we report our discovery of a nonsaturating, linear magnetoresistance in Mo$_8$Ga$_{41}$, a nearly isotropic strong electron-phonon coupling superconductor with a linear-in-temperature resistivity from the transition temperature to $\sim$55 K. The growth of the resistivity in field is comparable to that in temperature, provided that both quantities are measured in the energy unit. Our datasets are remarkably similar to magnetoresistance data of the optimally doped La$_{2-x}$Sr$_x$CuO$_4$, despite the clearly different crystal and electronic structures, and the apparent absence of quantum critical physics in Mo$_8$Ga$_{41}$. A new empirical scaling formula is developed, which is able to capture the key features of the low-temperature magnetoresistance data of Mo$_8$Ga$_{41}$, as well as the data of La$_{2-x}$Sr$_x$CuO$_4$.
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Submitted 7 October, 2020;
originally announced October 2020.
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Low-energy type-II Dirac fermions and spin-polarized topological surface states in transition-metal dichalcogenide NiTe$_2$
Authors:
Barun Ghosh,
Debashis Mondal,
Chia-Nung Kuo,
Chin Shan Lue,
Jayita Nayak,
Jun Fujii,
Ivana Vobornik,
Antonio Politano,
Amit Agarwal
Abstract:
Using spin- and angle- resolved photoemission spectroscopy (spin-ARPES) together with ${\it ab~initio}$ calculations, we demonstrate the existence of a type-II Dirac semimetal state in NiTe$_2$. We show that, unlike PtTe$_2$, PtSe$_2$, and PdTe$_2$, the Dirac node in NiTe$_2$ is located in close vicinity of the Fermi energy. Additionally, NiTe$_2$ also hosts a pair of band inversions below the Fer…
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Using spin- and angle- resolved photoemission spectroscopy (spin-ARPES) together with ${\it ab~initio}$ calculations, we demonstrate the existence of a type-II Dirac semimetal state in NiTe$_2$. We show that, unlike PtTe$_2$, PtSe$_2$, and PdTe$_2$, the Dirac node in NiTe$_2$ is located in close vicinity of the Fermi energy. Additionally, NiTe$_2$ also hosts a pair of band inversions below the Fermi level along the $Γ-A$ high-symmetry direction, with one of them leading to a Dirac cone in the surface states. The bulk Dirac nodes and the ladder of band inversions in NiTe$_2$ support unique topological surface states with chiral spin texture over a wide range of energies. Our work paves the way for the exploitation of the low-energy type-II Dirac fermions in NiTe$_2$ in the fields of spintronics, THz plasmonics and ultrafast optoelectronics.
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Submitted 13 August, 2019; v1 submitted 12 August, 2019;
originally announced August 2019.
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Broadband excitation spectrum of bulk crystals and thin layers of PtTe$_2$
Authors:
Barun Ghosh,
Francesca Alessandro,
Marilena Zappia,
Rosaria Brescia,
Chia-Nung Kuo,
Chin Shan Lue,
Gennaro Chiarello,
Antonio Politano,
Lorenzo S. Caputi,
Amit Agarwal,
Anna Cupolillo
Abstract:
We explore the broadband excitation spectrum of bulk PtTe$_2$ using electron energy loss spectroscopy and density functional theory. In addition to infrared modes related to intraband 3D Dirac plasmon and interband transitions between the 3D Dirac bands, we observe modes at 3.9, 7.5 and 19.0 eV in the ultraviolet region. The comparison of the excitation spectrum with the calculated orbital-resolve…
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We explore the broadband excitation spectrum of bulk PtTe$_2$ using electron energy loss spectroscopy and density functional theory. In addition to infrared modes related to intraband 3D Dirac plasmon and interband transitions between the 3D Dirac bands, we observe modes at 3.9, 7.5 and 19.0 eV in the ultraviolet region. The comparison of the excitation spectrum with the calculated orbital-resolved density of states allows us to ascribe spectral features to transitions between specific electronic states. Additionally, we study the thickness dependence of the high-energy plasmon in the PtTe2 thin films. We show that, unlike graphene, the high-energy plasmon in PtTe2 thin film gets red-shifted by 2.5 eV with increasing thickness.
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Submitted 27 August, 2018;
originally announced August 2018.
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Nodeless superconductivity in the cage-type superconductor Sc5Ru6Sn18 with preserved time-reversal symmetry
Authors:
D. Kumar,
C. N. Kuo,
F. Astuti,
T. Shang,
M. K. Lee,
C. S. Lue,
I. Watanabe,
J. A. T. Barker,
T. Shiroka,
L. J. Chang
Abstract:
We report the single-crystal synthesis and detailed investigations of the cage-type superconductor Sc5Ru6Sn18, using powder x-ray diffraction (XRD), magnetization, specific-heat and muon-spin relaxation (muSR) measurements. Sc5Ru6Sn18 crystallizes in a tetragonal structure (space group I41/acd) with the lattice parameters a = 1.387(3) nm and c = 2.641(5) nm. Both DC and AC magnetization measuremen…
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We report the single-crystal synthesis and detailed investigations of the cage-type superconductor Sc5Ru6Sn18, using powder x-ray diffraction (XRD), magnetization, specific-heat and muon-spin relaxation (muSR) measurements. Sc5Ru6Sn18 crystallizes in a tetragonal structure (space group I41/acd) with the lattice parameters a = 1.387(3) nm and c = 2.641(5) nm. Both DC and AC magnetization measurements prove the type-II superconductivity in Sc5Ru6Sn18 with Tc = 3.5(1) K, a lower critical field H_c1 (0) = 157(9) Oe and an upper critical field, H_c2 (0) = 26(1) kOe. The zero-field electronic specific-heat data are well fitted using a single-gap BCS model, with superconducting gap = 0.64(1) meV. The Sommerfeld constant varies linearly with the applied magnetic field, indicating s-wave superconductivity in Sc5Ru6Sn18. Specific-heat and transverse-field (TF) muSR measurements reveal that Sc5Ru6Sn18 is a superconductor with strong electron-phonon coupling, with TF-muSR also suggesting the single-gap s-wave character of the superconductivity. Furthermore, zero-field muSR measurements do not detect spontaneous magnetic fields below Tc, hence implying that time-reversal symmetry is preserved in Sc5Ru6Sn18.
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Submitted 17 July, 2018;
originally announced July 2018.
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Extremely large magnetoresistance and the complete determination of the Fermi surface topology in the semimetal ScSb
Authors:
Y. J. Hu,
E. I. Paredes Aulestia,
K. F. Tse,
C. N. Kuo,
J. Y. Zhu,
C. S. Lue,
K. T. Lai,
Swee K. Goh
Abstract:
We report the magnetoresistance of ScSb, which is a semimetal with a simple rocksalt-type structure. We found that the magnetoresistance reaches $\sim$28000 % at 2 K and 14 T in our best sample, and it exhibits a resistivity plateau at low temperatures. The Shubnikov-de Haas oscillations extracted from the magnetoresistance data allow the full construction of the Fermi surface, including the so-ca…
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We report the magnetoresistance of ScSb, which is a semimetal with a simple rocksalt-type structure. We found that the magnetoresistance reaches $\sim$28000 % at 2 K and 14 T in our best sample, and it exhibits a resistivity plateau at low temperatures. The Shubnikov-de Haas oscillations extracted from the magnetoresistance data allow the full construction of the Fermi surface, including the so-called $α_3$ pocket which has been missing in other closely related monoantimonides, and an additional hole pocket centered at $Γ$. The electron concentration ($n$) and the hole concentration ($p$) are extracted from our analysis, which indicate that ScSb is a nearly compensated semimetal with $n/p\approx0.93$. The calculated band structure indicates the absence of a band inversion, and the large magnetoresistance in ScSb can be attributed to the nearly perfect compensation of electrons and holes, despite the existence of the additional hole pocket.
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Submitted 7 August, 2018; v1 submitted 21 June, 2018;
originally announced June 2018.
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Optical spectroscopy study of charge density wave order in Sr$_{3}$Rh$_{4}$Sn$_{13}$ and (Sr$_{0.5}$Ca$_{0.5}$)$_{3}$Rh$_{4}$Sn$_{13}$
Authors:
W. J. Ban,
H. P. Wang,
C. W. Tseng,
C. N. Kuo,
C. S. Lue,
N. L. Wang
Abstract:
We perform optical spectroscopy measurement across the charge density wave (CDW) phase transitions on single-crystal samples of Sr$_{3}$Rh$_{4}$Sn$_{13}$ and (Sr$_{0.5}$Ca$_{0.5}$)$_{3}$Rh$_{4}$Sn$_{13}$. Formation of CDW energy gap was clearly observed for both single-crystal samples when they undergo the phase transitions. The existence of a Drude component in $σ_1(ω)$ below \TCDW indicates that…
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We perform optical spectroscopy measurement across the charge density wave (CDW) phase transitions on single-crystal samples of Sr$_{3}$Rh$_{4}$Sn$_{13}$ and (Sr$_{0.5}$Ca$_{0.5}$)$_{3}$Rh$_{4}$Sn$_{13}$. Formation of CDW energy gap was clearly observed for both single-crystal samples when they undergo the phase transitions. The existence of a Drude component in $σ_1(ω)$ below \TCDW indicates that the Fermi surface is only partially gapped in the CDW state. The obtained value of 2$Δ$/K$_{B}$T$_{CDW}$ is roughly 13 for both Sr$_{3}$Rh$_{4}$Sn$_{13}$ and (Sr$_{0.5}$Ca$_{0.5}$)$_{3}$Rh$_{4}$Sn$_{13}$ compounds. The value is considerably larger than the mean-field value based on the weak-coupling BCS theory. The observed spectral feature in (Sr$_{x}$Ca$_{1-x}$)$_{3}$Rh$_{4}$Sn$_{13}$ resembles those seen in many other CDW systems.
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Submitted 9 January, 2017; v1 submitted 14 September, 2016;
originally announced September 2016.
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Interplay between localized and itinerant magnetism in Co substituted FeGa$_3$
Authors:
A. A. Gippius,
V. Yu. Verchenko,
A. V. Tkachev,
N. E. Gervits,
C. S. Lue,
A. A. Tsirlin,
N. Büttgen,
W. Krätschmer,
M. Baenitz,
M. Shatruk,
A. V. Shevelkov
Abstract:
The evolution of the electronic structure and magnetic properties with Co substitution for Fe in the solid solution Fe$_{1-x}$Co$_x$Ga$_3$ was studied by means of electrical resistivity, magnetization, ab-initio band structure calculations, and nuclear spin-lattice relaxation $1/T_1$ of the $^{69,71}$Ga nuclei. Temperature dependencies of the electrical resistivity reveal that the evolution from t…
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The evolution of the electronic structure and magnetic properties with Co substitution for Fe in the solid solution Fe$_{1-x}$Co$_x$Ga$_3$ was studied by means of electrical resistivity, magnetization, ab-initio band structure calculations, and nuclear spin-lattice relaxation $1/T_1$ of the $^{69,71}$Ga nuclei. Temperature dependencies of the electrical resistivity reveal that the evolution from the semiconducting to the metallic state in the Fe$_{1-x}$Co$_x$Ga$_3$ system occurs at $0.025<x<0.075$. The $^{69,71}(1/T_1)$ was studied as a function of temperature in a wide temperature range of $2\!-\!300$ K for the concentrations $x = 0.0,$ $0.5,$ and $1.0$. In the parent semiconducting compound FeGa$_3$, the temperature dependence of the $^{69}(1/T_1)$ exhibits a huge maximum at about $T\!\sim\!6$ K indicating the existence of in-gap states. The opposite binary compound, CoGa$_3$, demonstrates a metallic Korringa behavior with $1/T_1$ $\propto T$. In Fe$_{0.5}$Co$_{0.5}$Ga$_3$, the relaxation is strongly enhanced due to spin fluctuations and follows $1/T_1\propto T^{1/2}$, which is a unique feature of weakly and nearly antiferromagnetic metals. This itinerant antiferromagnetic behavior contrasts with both magnetization measurements, showing localized magnetism with a relatively low effective moment of about 0.7 $μ_B$/f.u., and ab initio band structure calculations, where a ferromagnetic state with an ordered moment of 0.5 $μ_B$/f.u. is predicted. The results are discussed in terms of the interplay betwen the localized and itinerant magnetizm including in-gap states and spin fluctuations.
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Submitted 6 November, 2013;
originally announced November 2013.
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Spin gap behavior in Cu$_2$Sc$_2$Ge$_4$O$_{13}$ by $^{45}$Sc nuclear magnetic resonance
Authors:
C. S. Lue,
C. N. Kuo,
T. H. Su,
G. J. Redhammer
Abstract:
We report the results of a $^{45}$Sc nuclear magnetic resonance (NMR) study on the quasi-one-dimensional compound Cu$_2$Sc$_2$Ge$_4$O$_{13}$ at temperatures between 4 and 300 K. This material has been a subject of current interest due to indications of spin gap behavior. The temperature-dependent NMR shift exhibits a character of low-dimensional magnetism with a negative broad maximum at…
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We report the results of a $^{45}$Sc nuclear magnetic resonance (NMR) study on the quasi-one-dimensional compound Cu$_2$Sc$_2$Ge$_4$O$_{13}$ at temperatures between 4 and 300 K. This material has been a subject of current interest due to indications of spin gap behavior. The temperature-dependent NMR shift exhibits a character of low-dimensional magnetism with a negative broad maximum at $T_{max}$ $\simeq $ 170 K. Below $% T_{max}$, the NMR shifts and spin lattice relaxation rates clearly indicate activated responses, confirming the existence of a spin gap in Cu$_2$Sc$_2$Ge% $_4$O$_{13}$. The experimental NMR data can be well fitted to the spin dimer model, yielding a spin gap value of about 275 K which is close to the 25 meV peak found in the inelastic neutron scattering measurement. A detailed analysis further points out that the nearly isolated dimer picture is proper for the understanding of spin gap nature in Cu$_2$Sc$_2$Ge$_4$O$_{13}$.
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Submitted 5 December, 2006;
originally announced December 2006.
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NMR and Mossbauer study of spin dynamics and electronic structure of Fe{2+x}V{1-x}Al and Fe2VGa
Authors:
C. S. Lue,
Yang Li,
Joseph H. Ross Jr.,
George M. Irwin
Abstract:
In order to assess the magnetic ordering process in Fe2VAl and the related material Fe2VGa, we have carried out nuclear magnetic resonance (NMR) and Mossbauer studies. 27Al NMR relaxation measurements covered the temperature range 4 -- 500 K in Fe(2+x)V(1-x)Al samples. We found a peak in the NMR spin-lattice relaxation rate, 27T1^-1, corresponding to the magnetic transitions in each of these sam…
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In order to assess the magnetic ordering process in Fe2VAl and the related material Fe2VGa, we have carried out nuclear magnetic resonance (NMR) and Mossbauer studies. 27Al NMR relaxation measurements covered the temperature range 4 -- 500 K in Fe(2+x)V(1-x)Al samples. We found a peak in the NMR spin-lattice relaxation rate, 27T1^-1, corresponding to the magnetic transitions in each of these samples. These peaks appear at 125 K, 17 K, and 165 K for x = 0.10, 0, and - 0.05 respectively, and we connect these features with critical slowing down of the localized antisite defects. Mossbauer measurements for Fe2VAl and Fe2VGa showed lines with no hyperfine splitting, and isomer shifts nearly identical to those of the corresponding sites in Fe3Al and Fe3Ga, respectively. We show that a model in which local band filling leads to magnetic regions in the samples, in addition to the localized antisite defects, can account for the observed magnetic ordering behavior.
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Submitted 30 April, 2003; v1 submitted 19 November, 2002;
originally announced November 2002.
