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Current distribution and chirality in the regime of the quantized Hall effect
Authors:
Serkan Sirt,
Matthias Kamm,
Vladimir Y. Umansky,
Stefan Ludwig
Abstract:
The integer quantum Hall effect (QHE) is one of the most basic and, at the same time, astonishing phenomena in condensed matter physics. Despite its importance for metrology and fundamental physics, our microscopic understanding of the QHE is not yet complete. For decades, there has been a discussion about the current distribution inside a Hall bar for the case of a quantized Hall resistance. With…
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The integer quantum Hall effect (QHE) is one of the most basic and, at the same time, astonishing phenomena in condensed matter physics. Despite its importance for metrology and fundamental physics, our microscopic understanding of the QHE is not yet complete. For decades, there has been a discussion about the current distribution inside a Hall bar for the case of a quantized Hall resistance. With the advent of quantum technology, the questions, if the current flows in compressible Landauer-Büttiker edge channels or in incompressible strips with varying geometry and whether the current flow is chiral or not, gain importance, because the quantum phase of each charge carrier depends on its exact pathway. In the present work, we compare multi-terminal current measurements in the regime of the QHE with model calculations in order to unravel the current density distribution in a Hall-bar device. We find, that the conjecture of chirality is justified for the plateaus of quantized Hall resistance, while in between plateaus the current density looses its chirality. The latter is described by the Drude model, which predicts a homogeneous current density for a sample with homogeneous mobility and carrier density.
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Submitted 1 July, 2024;
originally announced July 2024.
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Direct measurement of bulk currents in the quantized Hall regime
Authors:
Serkan Sirt,
Vladimir Y. Umansky,
Afif Siddiki,
Stefan Ludwig
Abstract:
The integer quantized Hall effect reveals a state of scattering-free carrier transport and quantized resistance in a two-dimensional conductor exposed to a perpendicular magnetic field. The quantized resistance is observed for the Hall bar geometry, i.e., if the current carrying contacts are connected by sample edges. A widely accepted model is the Landauer-Buttiker picture, which assumes an incom…
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The integer quantized Hall effect reveals a state of scattering-free carrier transport and quantized resistance in a two-dimensional conductor exposed to a perpendicular magnetic field. The quantized resistance is observed for the Hall bar geometry, i.e., if the current carrying contacts are connected by sample edges. A widely accepted model is the Landauer-Buttiker picture, which assumes an incompressible, i.e., electrically insulating bulk state surrounded by one-dimensional edge channels giving rise to quantized resistance. This model is challenged by the screening theory, which takes into account electron-electron interaction and predicts for the quantized Hall plateaus current flow in incompressible strips, which gradually shifts from the sample edges into the bulk with increasing magnetic field. We present direct proof of the predicted scattering-free bulk transport by exploring a Hall bar augmented with an additional contact placed in its center away from the Hall bar edges. Our result supports the screening theory.
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Submitted 8 May, 2024;
originally announced May 2024.
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Scanning X-ray diffraction microscopy of a 6 GHz surface acoustic wave
Authors:
M. Hanke,
N. Ashurbekov,
E. Zatterin,
M. E. Msall,
J. Hellemann,
P. V. Santos,
T. U. Schulli,
S. Ludwig
Abstract:
Surface acoustic waves at frequencies beyond a few GHz are promising components for quantum technology applications. Applying scanning X-ray diffraction microcopy we directly map the locally resolved components of the three-dimensional strain field generated by a standing surface acoustic wave on GaAs with wavelength $λ\simeq500\,$nm corresponding to frequencies near 6 GHz. We find that the lattic…
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Surface acoustic waves at frequencies beyond a few GHz are promising components for quantum technology applications. Applying scanning X-ray diffraction microcopy we directly map the locally resolved components of the three-dimensional strain field generated by a standing surface acoustic wave on GaAs with wavelength $λ\simeq500\,$nm corresponding to frequencies near 6 GHz. We find that the lattice distortions perpendicular to the surface are phase-shifted compared to those in propagation direction. Model calculations based on Rayleigh waves confirm our measurements. Our results represent a break through in providing a full characterization of a radio frequency surface acoustic wave beyond plain imaging.
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Submitted 28 September, 2022;
originally announced September 2022.
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Atomic force microscopy calibration of standing surface acoustic wave amplitudes
Authors:
Jan Hellemann,
Filipp Müller,
Madeleine Msall,
Paulo V. Santos,
Stefan Ludwig
Abstract:
Atomic force microscopy is an important tool for characterizing surface acoustic waves, in particular for high frequencies, where the wavelength is too short to be resolved by laser interferometry. A caveat is, that the cantilever deflection is not equal to the amplitude of the surface acoustic wave. We show, that the energy transfer from the moving surface to the cantilever instead leads to a def…
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Atomic force microscopy is an important tool for characterizing surface acoustic waves, in particular for high frequencies, where the wavelength is too short to be resolved by laser interferometry. A caveat is, that the cantilever deflection is not equal to the amplitude of the surface acoustic wave. We show, that the energy transfer from the moving surface to the cantilever instead leads to a deflection exceeding the surface modulation. We present a method for an accurate calibration of surface acoustic wave amplitudes based on comparing force-curve measurements with the equation of motion of a driven cantilever. We demonstrate our method for a standing surface acoustic wave on a GaAs crystal confined in a focusing cavity with a resonance frequency near 3 GHz.
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Submitted 21 November, 2021;
originally announced November 2021.
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Coherent Electron Optics with Ballistically Coupled Quantum Point Contacts
Authors:
Jaan Freudenfeld,
Max Geier,
Vladimir Umansky,
Piet W. Brouwer,
Stefan Ludwig
Abstract:
The realization of integrated quantum circuits requires precise on-chip control of charge carriers. Aiming at the coherent coupling of distant nanostructures at zero magnetic field, here we study the ballistic electron transport through two quantum point contacts (QPCs) in series in a three terminal configuration. We enhance the coupling between the QPCs by electrostatic focusing using a field eff…
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The realization of integrated quantum circuits requires precise on-chip control of charge carriers. Aiming at the coherent coupling of distant nanostructures at zero magnetic field, here we study the ballistic electron transport through two quantum point contacts (QPCs) in series in a three terminal configuration. We enhance the coupling between the QPCs by electrostatic focusing using a field effect lens. To study the emission and collection properties of QPCs in detail we combine the electrostatic focusing with magnetic deflection. Comparing our measurements with quantum mechanical and classical calculations we demonstrate how the coherent and ballistic dynamics depend on the details of the QPC confinement potentials.
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Submitted 18 September, 2020; v1 submitted 27 February, 2020;
originally announced February 2020.
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Electrostatic potential shape of gate defined quantum point contacts
Authors:
Max Geier,
Jaan Freudenfeld,
Jorge T. Silva,
Vladimir Umansky,
Dirk Reuter,
Andreas D. Wieck,
Piet W. Brouwer,
Stefan Ludwig
Abstract:
Quantum point contacts (QPC) are fundamental building blocks of nanoelectronic circuits. For their emission dynamics as well as for interaction effects such as the 0.7-anomaly the details of the electrostatic potential are important, but the precise potential shapes are usually unknown. Here, we measure the one-dimensional subband spacings of various QPCs as a function of their conductance and com…
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Quantum point contacts (QPC) are fundamental building blocks of nanoelectronic circuits. For their emission dynamics as well as for interaction effects such as the 0.7-anomaly the details of the electrostatic potential are important, but the precise potential shapes are usually unknown. Here, we measure the one-dimensional subband spacings of various QPCs as a function of their conductance and compare our findings with models of lateral parabolic versus hard wall confinement. We find that a gate-defined QPC near pinch-off is compatible with the parabolic saddle point scenario. However, as the number of populated subbands is increased Coulomb screening flattens the potential bottom and a description in terms of a finite hard wall potential becomes more realistic.
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Submitted 18 September, 2020; v1 submitted 27 February, 2020;
originally announced February 2020.
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Optimization of ohmic contacts to n-type GaAs nanowires
Authors:
Ludwig Hüttenhofer,
Dionysios Xydias,
Ryan B. Lewis,
Sander Rauwerdink,
Abbes Tahraoui,
Hanno Küpers,
Lutz Geelhaar,
Oliver Marquardt,
Stefan Ludwig
Abstract:
III-V nanowires are comprehensively studied because of their suitability for optoelectronic quantum technology applications. However, their small dimensions and the spatial separation of carriers from the wire surface render electrical contacting difficult. Systematically studying ohmic contact formation by diffusion to $n$-doped GaAs nanowires, we provide a set of optimal annealing parameters for…
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III-V nanowires are comprehensively studied because of their suitability for optoelectronic quantum technology applications. However, their small dimensions and the spatial separation of carriers from the wire surface render electrical contacting difficult. Systematically studying ohmic contact formation by diffusion to $n$-doped GaAs nanowires, we provide a set of optimal annealing parameters for Pd/Ge/Au ohmic contacts. We reproducibly achieve low specific contact resistances of $\sim2\times10^{-7}\,Ω\text{cm}^2$ at room temperature becoming an order of magnitude higher at $T\simeq4.2\,$K. We provide a phenomenological model to describe contact resistances as a function of diffusion parameters. Implementing a transfer-matrix method, we numerically study the influence of the Schottky barrier on the contact resistance. Our results indicate that contact resistances can be predicted using various barrier shapes but further insights into structural properties would require a full microscopic understanding of the complex diffusion processes.
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Submitted 8 June, 2018; v1 submitted 22 November, 2017;
originally announced November 2017.
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Field effect induced mesoscopic devices in depleted two dimensional electron systems
Authors:
N. Bachsoliani,
S. Platonov,
A. D. Wieck,
S. Ludwig
Abstract:
Nanoelectronic devices embedded in the two-dimensional electron system (2DES) of a GaAs/AlGaAs heterostructure enable a large variety of applications from fundamental research to high speed transistors. Electrical circuits are thereby commonly defined by creating barriers for carriers by selective depletion of a pre-existing 2DES. Here we explore an alternative approach: we deplete the 2DES global…
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Nanoelectronic devices embedded in the two-dimensional electron system (2DES) of a GaAs/AlGaAs heterostructure enable a large variety of applications from fundamental research to high speed transistors. Electrical circuits are thereby commonly defined by creating barriers for carriers by selective depletion of a pre-existing 2DES. Here we explore an alternative approach: we deplete the 2DES globally by applying a negative voltage to a global top gate and screen the electric field of the top gate only locally using nanoscale gates placed on the wafer surface between the plane of the 2DES and the top gate. Free carriers are located beneath the screen gates and their properties can be controlled by means of geometry and applied voltages. This method promises considerable advantages for the definition of complex circuits by the electric field effect as it allows to reduce the number of gates and simplify gate geometries. Examples are carrier systems with ring topology or large arrays of quantum dots. Here, we present a first exploration of this method pursuing field effect, Hall effect and Aharonov-Bohm measurements to study electrostatic, dynamic and coherent properties.
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Submitted 22 November, 2017; v1 submitted 7 August, 2017;
originally announced August 2017.
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Landau-Zener interference at bichromatic driving
Authors:
F. Forster,
M. Mühlbacher,
R. Blattmann,
D. Schuh,
W. Wegscheider,
S. Ludwig,
S. Kohler
Abstract:
We investigate experimentally and theoretically the interference at avoided crossings which are repeatedly traversed as a consequence of an applied ac field. Our model system is a charge qubit in a serial double quantum dot connected to two leads. Our focus lies on effects caused by simultaneous driving with two different frequencies. We work out how the commensurability of the driving frequencies…
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We investigate experimentally and theoretically the interference at avoided crossings which are repeatedly traversed as a consequence of an applied ac field. Our model system is a charge qubit in a serial double quantum dot connected to two leads. Our focus lies on effects caused by simultaneous driving with two different frequencies. We work out how the commensurability of the driving frequencies affects the symmetry of the interference patterns both in real space and in Fourier space. For commensurable frequencies, the symmetry depends sensitively on the relative phase between the two modes, whereas for incommensurable frequencies the symmetry of monochromatic driving is always recovered.
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Submitted 7 October, 2015;
originally announced October 2015.
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Multistability and spin diffusion enhanced lifetimes in dynamic nuclear polarization in a double quantum dot
Authors:
Florian Forster,
Max Mühlbacher,
Dieter Schuh,
Werner Wegscheider,
Geza Giedke,
Stefan Ludwig
Abstract:
The control of nuclear spins in quantum dots is essential to explore their many-body dynamics and exploit their prospects for quantum information processing. We present a unique combination of dynamic nuclear spin polarization and electric-dipole-induced spin resonance in an electrostatically defined double quantum dot (DQD) exposed to the strongly inhomogeneous field of two on-chip nanomagnets. O…
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The control of nuclear spins in quantum dots is essential to explore their many-body dynamics and exploit their prospects for quantum information processing. We present a unique combination of dynamic nuclear spin polarization and electric-dipole-induced spin resonance in an electrostatically defined double quantum dot (DQD) exposed to the strongly inhomogeneous field of two on-chip nanomagnets. Our experiments provide direct and unrivaled access to the nuclear spin polarization distribution and allow us to establish and characterize multiple fixed points. Further, we demonstrate polarization of the DQD environment by nuclear spin diffusion which significantly stabilizes the nuclear spins inside the DQD.
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Submitted 5 October, 2015; v1 submitted 26 August, 2015;
originally announced August 2015.
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Lissajous rocking ratchet
Authors:
S. Platonov,
B. Kästner,
H. W. Schumacher,
S. Kohler,
S. Ludwig
Abstract:
Breaking time-reversal symmetry (TRS) in the absence of a net bias can give rise to directed steady-state non-equilibrium transport phenomena such as ratchet effects. Here we present, theoretically and experimentally, the concept of a Lissajous rocking ratchet as an instrument based on breaking TRS. Our system is a semiconductor quantum dot (QD) with periodically modulated dot-lead tunnel barriers…
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Breaking time-reversal symmetry (TRS) in the absence of a net bias can give rise to directed steady-state non-equilibrium transport phenomena such as ratchet effects. Here we present, theoretically and experimentally, the concept of a Lissajous rocking ratchet as an instrument based on breaking TRS. Our system is a semiconductor quantum dot (QD) with periodically modulated dot-lead tunnel barriers. Broken TRS gives rise to single electron tunneling current. Its direction is fully controlled by exploring frequency and phase relations between the two barrier modulations. The concept of Lissajous ratchets can be realized in a large variety of different systems, including nano-electrical, nano-electromechanical or superconducting circuits. It promises applications based on a detailed on-chip comparison of radio-frequency signals.
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Submitted 13 March, 2015;
originally announced March 2015.
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Electric-dipole-induced spin resonance in a lateral double quantum dot incorporating two single domain nanomagnets
Authors:
F. Forster,
M. Mühlbacher,
D. Schuh,
W. Wegscheider,
S. Ludwig
Abstract:
On-chip magnets can be used to implement relatively large local magnetic field gradients in na- noelectronic circuits. Such field gradients provide possibilities for all-electrical control of electron spin-qubits where important coupling constants depend crucially on the detailed field distribution. We present a double quantum dot (QD) hybrid device laterally defined in a GaAs / AlGaAs het- erostr…
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On-chip magnets can be used to implement relatively large local magnetic field gradients in na- noelectronic circuits. Such field gradients provide possibilities for all-electrical control of electron spin-qubits where important coupling constants depend crucially on the detailed field distribution. We present a double quantum dot (QD) hybrid device laterally defined in a GaAs / AlGaAs het- erostructure which incorporates two single domain nanomagnets. They have appreciably different coercive fields which allows us to realize four distinct configurations of the local inhomogeneous field distribution. We perform dc transport spectroscopy in the Pauli-spin blockade regime as well as electric-dipole-induced spin resonance (EDSR) measurements to explore our hybrid nanodevice. Characterizing the two nanomagnets we find excellent agreement with numerical simulations. By comparing the EDSR measurements with a second double QD incorporating just one nanomagnet we reveal an important advantage of having one magnet per QD: It facilitates strong field gradients in each QD and allows to control the electron spins individually for instance in an EDSR experi- ment. With just one single domain nanomagnet and common QD geometries EDSR can likely be performed only in one QD.
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Submitted 6 March, 2015;
originally announced March 2015.
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On the relation between the 0.7-anomaly and the Kondo effect: Geometric Crossover between a Quantum Point Contact and a Kondo Quantum Dot
Authors:
Jan Heyder,
Florian Bauer,
Enrico Schubert,
David Borowsky,
Dieter Schuh,
Werner Wegscheider,
Jan von Delft,
Stefan Ludwig
Abstract:
Quantum point contacts (QPCs) and quantum dots (QDs), two elementary building blocks of semiconducting nanodevices, both exhibit famously anomalous conductance features: the 0.7-anomaly in the former case, the Kondo effect in the latter. For both the 0.7-anomaly and the Kondo effect, the conductance shows a remarkably similar low-energy dependence on temperature $T$, source-drain voltage…
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Quantum point contacts (QPCs) and quantum dots (QDs), two elementary building blocks of semiconducting nanodevices, both exhibit famously anomalous conductance features: the 0.7-anomaly in the former case, the Kondo effect in the latter. For both the 0.7-anomaly and the Kondo effect, the conductance shows a remarkably similar low-energy dependence on temperature $T$, source-drain voltage $V_{\rm sd}$ and magnetic field $B$. In a recent publication [F. Bauer et al., Nature, 501, 73 (2013)], we argued that the reason for these similarities is that both a QPC and a KQD feature spin fluctuations that are induced by the sample geometry, confined in a small spatial regime, and enhanced by interactions. Here we further explore this notion experimentally and theoretically by studying the geometric crossover between a QD and a QPC, focussing on the $B$-field dependence of the conductance. We introduce a one-dimensional model that reproduces the essential features of the experiments, including a smooth transition between a Kondo QD and a QPC with 0.7-anomaly. We find that in both cases the anomalously strong negative magnetoconductance goes hand in hand with strongly enhanced local spin fluctuations. Our experimental observations include, in addition to the Kondo effect in a QD and the 0.7-anomaly in a QPC, Fano interference effects in a regime of coexistence between QD and QPC physics, and Fabry-Perot-type resonances on the conductance plateaus of a clean QPC. We argue that Fabry-Perot-type resonances occur generically if the electrostatic potential of the QPC generates a flatter-than-parabolic barrier top.
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Submitted 11 September, 2014;
originally announced September 2014.
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Towards combined transport and optical studies of the 0.7-anomaly in a quantum point contact
Authors:
E. Schubert,
J. Heyder,
F. Bauer,
W. Stumpf,
W. Wegscheider,
J. v. Delft,
S. Ludwig,
A. Högele
Abstract:
A Quantum Point Contact (QPC) causes a one-dimensional constriction on the spatial potential landscape of a two-dimensional electron system. By tuning the voltage applied on a QPC at low temperatures the resulting regular step-like electron conductance quantization can show an additional kink near pinch-off around 0.7(2$e^2$/h), called 0.7-anomaly. In a recent publication, we presented a combinati…
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A Quantum Point Contact (QPC) causes a one-dimensional constriction on the spatial potential landscape of a two-dimensional electron system. By tuning the voltage applied on a QPC at low temperatures the resulting regular step-like electron conductance quantization can show an additional kink near pinch-off around 0.7(2$e^2$/h), called 0.7-anomaly. In a recent publication, we presented a combination of theoretical calculations and transport measurements that lead to a detailed understanding of the microscopic origin of the 0.7-anomaly. Functional Renormalization Group-based calculations were performed exhibiting the 0.7-anomaly even when no symmetry-breaking external magnetic fields are involved. According to the calculations the electron spin susceptibility is enhanced within a QPC that is tuned in the region of the 0.7-anomaly. Moderate externally applied magnetic fields impose a corresponding enhancement in the spin magnetization. In principle, it should be possible to map out this spin distribution optically by means of the Faraday rotation technique. Here we report the initial steps of an experimental project aimed at realizing such measurements. Simulations were performed on a particularly pre-designed semiconductor heterostructure. Based on the simulation results a sample was built and its basic transport and optical properties were investigated. Finally, we introduce a sample gate design, suitable for combined transport and optical studies.
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Submitted 31 March, 2014;
originally announced March 2014.
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Tunable non-equilibrium Luttinger liquid based on counter-propagating edge channels
Authors:
M. G. Prokudina,
S. Ludwig,
V. Pellegrini,
L. Sorba,
G. Biasiol,
V. S. Khrapai
Abstract:
We investigate energy transfer between counter-propagating quantum Hall edge channels (ECs) in a two-dimensional electron system at filling factor ν=1. The ECs are separated by a thin impenetrable potential barrier and Coulomb coupled, thereby constituting a quasi one-dimensional analogue of a spinless Luttinger liquid (LL). We drive one, say hot, EC far from thermal equilibrium and measure the en…
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We investigate energy transfer between counter-propagating quantum Hall edge channels (ECs) in a two-dimensional electron system at filling factor ν=1. The ECs are separated by a thin impenetrable potential barrier and Coulomb coupled, thereby constituting a quasi one-dimensional analogue of a spinless Luttinger liquid (LL). We drive one, say hot, EC far from thermal equilibrium and measure the energy transfer rate P into the second, cold, EC using a quantum point contact as a bolometer. The dependence of P on the drive bias indicates breakdown of the momentum conservation, whereas P is almost independent on the length of the region where the ECs interact. Interpreting our results in terms of plasmons (collective density excitations), we find that the energy transfer between the ECs occurs via plasmon backscattering at the boundaries of the LL. The backscattering probability is determined by the LL interaction parameter and can be tuned by changing the width of the electrostatic potential barrier between the ECs.
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Submitted 30 May, 2014; v1 submitted 20 December, 2013;
originally announced December 2013.
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Characterization of Qubit Dephasing by Landau-Zener Interferometry
Authors:
F. Forster,
G. Petersen,
S. Manus,
P. Hänggi,
D. Schuh,
W. Wegscheider,
S. Kohler,
S. Ludwig
Abstract:
Controlling coherent interaction at avoided crossings is at the heart of quantum information processing. The regime between sudden switches and adiabatic transitions is characterized by quantum superpositions that enable interference experiments. Here, we implement periodic passages at intermediate speed in a GaAs-based two-electron charge qubit and observe Landau-Zener-Stückelberg-Majorana (LZSM)…
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Controlling coherent interaction at avoided crossings is at the heart of quantum information processing. The regime between sudden switches and adiabatic transitions is characterized by quantum superpositions that enable interference experiments. Here, we implement periodic passages at intermediate speed in a GaAs-based two-electron charge qubit and observe Landau-Zener-Stückelberg-Majorana (LZSM) quantum interference of the resulting superposition state. We demonstrate that LZSM interferometry is a viable and very general tool to not only study qubit properties but beyond to decipher decoherence caused by complex environmental influences. Our scheme is based on straightforward steady state experiments. The coherence time of our two-electron charge qubit is limited by electron-phonon interaction. It is much longer than previously reported for similar structures.
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Submitted 24 September, 2013; v1 submitted 23 September, 2013;
originally announced September 2013.
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Anomalous resistance overshoot in the integer quantum Hall effect
Authors:
E. M. Kendirlik,
S. Sirt,
S. B. Kalkan,
W. Dietsche,
W. Wegscheider,
S. Ludwig,
A. Siddiki
Abstract:
In this work we report experiments on defined by shallow etching narrow Hall bars. The magneto-transport properties of intermediate mobility two-dimensional electron systems are investigated and analyzed within the screening theory of the integer quantized Hall effect. We observe a non-monotonic increase of Hall resistance at the low magnetic field ends of the quantized plateaus, known as the over…
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In this work we report experiments on defined by shallow etching narrow Hall bars. The magneto-transport properties of intermediate mobility two-dimensional electron systems are investigated and analyzed within the screening theory of the integer quantized Hall effect. We observe a non-monotonic increase of Hall resistance at the low magnetic field ends of the quantized plateaus, known as the overshoot effect. Unexpectedly, for Hall bars that are defined by shallow chemical etching the overshoot effect becomes more pronounced at elevated temperatures. We observe the overshoot effect at odd and even integer plateaus, which favor a spin independent explanation, in contrast to discussion in the literature. In a second set of the experiments, we investigate the overshoot effect in gate defined Hall bar and explicitly show that the amplitude of the overshoot effect can be directly controlled by gate voltages. We offer a comprehensive explanation based on scattering between evanescent incompressible channels.
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Submitted 6 May, 2013;
originally announced May 2013.
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Quantum interference and phonon-mediated back-action in lateral quantum dot circuits
Authors:
G. Granger,
D. Taubert,
C. E. Young,
L. Gaudreau,
A. Kam,
S. A. Studenikin,
P. Zawadzki,
D. Harbusch,
D. Schuh,
W. Wegscheider,
Z. R. Wasilewski,
A. A. Clerk,
S. Ludwig,
A. S. Sachrajda
Abstract:
Spin qubits have been successfully realized in electrostatically defined, lateral few-electron quantum dot circuits. Qubit readout typically involves spin to charge information conversion, followed by a charge measurement made using a nearby biased quantum point contact. It is critical to understand the back-action disturbances resulting from such a measurement approach. Previous studies have indi…
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Spin qubits have been successfully realized in electrostatically defined, lateral few-electron quantum dot circuits. Qubit readout typically involves spin to charge information conversion, followed by a charge measurement made using a nearby biased quantum point contact. It is critical to understand the back-action disturbances resulting from such a measurement approach. Previous studies have indicated that quantum point contact detectors emit phonons which are then absorbed by nearby qubits. We report here the observation of a pronounced back-action effect in multiple dot circuits where the absorption of detector-generated phonons is strongly modified by a quantum interference effect, and show that the phenomenon is well described by a theory incorporating both the quantum point contact and coherent phonon absorption. Our combined experimental and theoretical results suggest strategies to suppress back-action during the qubit readout procedure.
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Submitted 30 January, 2013;
originally announced January 2013.
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Large nuclear spin polarization in gate-defined quantum dots using a single-domain nanomagnet
Authors:
Gunnar Petersen,
Eric A. Hoffmann,
Dieter Schuh,
Werner Wegscheider,
Geza Giedke,
Stefan Ludwig
Abstract:
The electron-nuclei (hyperfine) interaction is central to spin qubits in solid state systems. It can be a severe decoherence source but also allows dynamic access to the nuclear spin states. We study a double quantum dot exposed to an on-chip single-domain nanomagnet and show that its inhomogeneous magnetic field crucially modifies the complex nuclear spin dynamics such that the Overhauser field t…
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The electron-nuclei (hyperfine) interaction is central to spin qubits in solid state systems. It can be a severe decoherence source but also allows dynamic access to the nuclear spin states. We study a double quantum dot exposed to an on-chip single-domain nanomagnet and show that its inhomogeneous magnetic field crucially modifies the complex nuclear spin dynamics such that the Overhauser field tends to compensate external magnetic fields. This turns out to be beneficial for polarizing the nuclear spin ensemble. We reach a nuclear spin polarization of ~50%, unrivaled in lateral dots, and explain our manipulation technique using a comprehensive rate equation model.
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Submitted 13 December, 2012;
originally announced December 2012.
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Nonequilibrium Landau-Zener-Stuckelberg spectroscopy in a double quantum dot
Authors:
P. Nalbach,
J. Knorzer,
S. Ludwig
Abstract:
We study theoretically nonequilibrium Landau-Zener-Stückelberg (LZS) dynamics in a driven double quantum dot (DQD) including dephasing and, importantly, energy relaxation due to environmental fluctuations. We derive effective nonequilibrium Bloch equations. These allow us to identify clear signatures for LZS oscilations observed but not recognized as such in experiments [Petersson et al., Phys. Re…
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We study theoretically nonequilibrium Landau-Zener-Stückelberg (LZS) dynamics in a driven double quantum dot (DQD) including dephasing and, importantly, energy relaxation due to environmental fluctuations. We derive effective nonequilibrium Bloch equations. These allow us to identify clear signatures for LZS oscilations observed but not recognized as such in experiments [Petersson et al., Phys. Rev. Lett. 105, 246804, 2010] and to identify the full environmental fluctuation spectra acting on a DQD given experimental data as in [Petersson et al., Phys. Rev. Lett. 105, 246804, 2010]. Herein we find that super-Ohmic fluctuations, typically due to phonons, are the main relaxation channel for a detuned DQD whereas Ohmic fluctuations dominate at zero detuning.
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Submitted 10 September, 2012;
originally announced September 2012.
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Few electron double quantum dot in an isotopically purified $^{28}$Si quantum well
Authors:
Andreas Wild,
Johannes Kierig,
Jürgen Sailer,
Joel Ager III,
Eugene Haller,
Gerhard Abstreiter,
Stefan Ludwig,
Dominique Bougeard
Abstract:
We present a few electron double quantum dot (QD) device defined in an isotopically purified $^{28}$Si quantum well (QW). An electron mobility of $5.5 \cdot 10^4 cm^2(Vs)^{-1}$ is observed in the QW which is the highest mobility ever reported for a 2D electron system in $^{28}$Si. The residual concentration of $^{29}$Si nuclei in the $^{28}$Si QW is lower than $10^{3} ppm$, at the verge where the…
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We present a few electron double quantum dot (QD) device defined in an isotopically purified $^{28}$Si quantum well (QW). An electron mobility of $5.5 \cdot 10^4 cm^2(Vs)^{-1}$ is observed in the QW which is the highest mobility ever reported for a 2D electron system in $^{28}$Si. The residual concentration of $^{29}$Si nuclei in the $^{28}$Si QW is lower than $10^{3} ppm$, at the verge where the hyperfine interaction is theoretically no longer expected to dominantly limit the $T_{2}$ spin dephasing time. We also demonstrate a complete suppression of hysteretic gate behavior and charge noise using a negatively biased global top gate.
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Submitted 6 April, 2012; v1 submitted 15 February, 2012;
originally announced February 2012.
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Determination of energy scales in few-electron double quantum dots
Authors:
D. Taubert,
D. Schuh,
W. Wegscheider,
S. Ludwig
Abstract:
The capacitive couplings between gate-defined quantum dots and their gates vary considerably as a function of applied gate voltages. The conversion between gate voltages and the relevant energy scales is usually performed in a regime of rather symmetric dot-lead tunnel couplings strong enough to allow direct transport measurements. Unfortunately this standard procedure fails for weak and possibly…
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The capacitive couplings between gate-defined quantum dots and their gates vary considerably as a function of applied gate voltages. The conversion between gate voltages and the relevant energy scales is usually performed in a regime of rather symmetric dot-lead tunnel couplings strong enough to allow direct transport measurements. Unfortunately this standard procedure fails for weak and possibly asymmetric tunnel couplings, often the case in realistic devices. We have developed methods to determine the gate voltage to energy conversion accurately in the different regimes of dot-lead tunnel couplings and demonstrate strong variations of the conversion factors. Our concepts can easily be extended to triple quantum dots or even larger arrays.
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Submitted 3 January, 2012; v1 submitted 18 May, 2011;
originally announced May 2011.
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Relaxation of hot electrons in a degenerate two-dimensional electron system: transition to one-dimensional scattering
Authors:
D. Taubert,
C. Tomaras,
G. J. Schinner,
H. P. Tranitz,
W. Wegscheider,
S. Kehrein,
S. Ludwig
Abstract:
The energy relaxation channels of hot electrons far from thermal equilibrium in a degenerate two-dimensional electron system are investigated in transport experiments in a mesoscopic three-terminal device. We observe a transition from two dimensions at zero magnetic field to quasi--one-dimensional scattering of the hot electrons in a strong magnetic field. In the two-dimensional case electron-elec…
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The energy relaxation channels of hot electrons far from thermal equilibrium in a degenerate two-dimensional electron system are investigated in transport experiments in a mesoscopic three-terminal device. We observe a transition from two dimensions at zero magnetic field to quasi--one-dimensional scattering of the hot electrons in a strong magnetic field. In the two-dimensional case electron-electron scattering is the dominant relaxation mechanism, while the emission of optical phonons becomes more and more important as the magnetic field is increased. The observation of up to 11 optical phonons emitted per hot electron allows us to determine the onset energy of LO phonons in GaAs at cryogenic temperatures with a high precision, $\eph=36.0\pm0.1\,$meV. Numerical calculations of electron-electron scattering and the emission of optical phonons underline our interpretation in terms of a transition to one-dimensional dynamics.
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Submitted 4 August, 2011; v1 submitted 8 April, 2011;
originally announced April 2011.
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An electron jet pump: The Venturi effect of a Fermi liquid
Authors:
D. Taubert,
G. J. Schinner,
C. Tomaras,
H. P. Tranitz,
W. Wegscheider,
S. Ludwig
Abstract:
A three-terminal device based on a two-dimensional electron system is investigated in the regime of non-equilibrium transport. Excited electrons scatter with the cold Fermi sea and transfer energy and momentum to other electrons. A geometry analogous to a water jet pump is used to create a jet pump for electrons. Because of its phenomenological similarity we name the observed behavior "electronic…
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A three-terminal device based on a two-dimensional electron system is investigated in the regime of non-equilibrium transport. Excited electrons scatter with the cold Fermi sea and transfer energy and momentum to other electrons. A geometry analogous to a water jet pump is used to create a jet pump for electrons. Because of its phenomenological similarity we name the observed behavior "electronic Venturi effect".
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Submitted 1 June, 2011; v1 submitted 10 November, 2010;
originally announced November 2010.
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Acoustic phonon-based interaction between coplanar quantum circuits in magnetic field
Authors:
M. G. Prokudina,
V. S. Khrapai,
S. Ludwig,
J. P. Kotthaus,
H. P. Tranitz,
W. Wegscheider
Abstract:
We explore the acoustic phonon-based interaction between two neighboring coplanar circuits containing semiconductor quantum point contacts in a perpendicular magnetic field B. In a drag-type experiment, a current flowing in one of the circuits (unbiased) is measured in response to an external current in the other. In moderate B the sign of the induced current is determined solely by the polarity o…
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We explore the acoustic phonon-based interaction between two neighboring coplanar circuits containing semiconductor quantum point contacts in a perpendicular magnetic field B. In a drag-type experiment, a current flowing in one of the circuits (unbiased) is measured in response to an external current in the other. In moderate B the sign of the induced current is determined solely by the polarity of B. This indicates that the spatial regions where the phonon emission/reabsorption is efficient are controlled by magnetic field. The results are interpreted in terms of non-equilibrium transport via skip** orbits in two-dimensional electron system.
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Submitted 17 November, 2010; v1 submitted 5 August, 2010;
originally announced August 2010.
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Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure
Authors:
A. Wild,
J. Sailer,
J. Nützel,
G. Abstreiter,
S. Ludwig,
D. Bougeard
Abstract:
We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific for silicon-based heterostructures and the effect of a comparably large effective electron mass on t…
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We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific for silicon-based heterostructures and the effect of a comparably large effective electron mass on transport properties and tunability of the double QD. Charge noise, which might be intrinsically induced due to strain-engineering is proven not to affect the stable operation of our device as a spin qubit. Our results promise the suitability of electrostatically defined QDs in Si/SiGe heterostructures for quantum information processing.
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Submitted 14 July, 2010;
originally announced July 2010.
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Radio frequency pulsed-gate charge spectroscopy on coupled quantum dots
Authors:
D. Harbusch,
S. Manus,
H. P. Tranitz,
W. Wegscheider,
S. Ludwig
Abstract:
Time-resolved electron dynamics in coupled quantum dots is directly observed by a pulsed-gate technique. While individual gate voltages are modulated with periodic pulse trains, average charge occupations are measured with a nearby quantum point contact as detector. A key component of our setup is a sample holder optimized for broadband radio frequency applications. Our setup can detect displaceme…
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Time-resolved electron dynamics in coupled quantum dots is directly observed by a pulsed-gate technique. While individual gate voltages are modulated with periodic pulse trains, average charge occupations are measured with a nearby quantum point contact as detector. A key component of our setup is a sample holder optimized for broadband radio frequency applications. Our setup can detect displacements of single electrons on time scales well below a nanosecond. Tunneling rates through individual barriers and relaxation times are obtained by using a rate equation model. We demonstrate the full characterization of a tunable double quantum dot using this technique, which could also be used for coherent charge qubit control.
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Submitted 11 November, 2010; v1 submitted 29 June, 2010;
originally announced June 2010.
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Electron-avalanche amplifier based on the electronic Venturi effect
Authors:
D. Taubert,
G. J. Schinner,
H. P. Tranitz,
W. Wegscheider,
C. Tomaras,
S. Kehrein,
S. Ludwig
Abstract:
Scattering of otherwise ballistic electrons far from equilibrium is investigated in a cold two-dimensional electron system. The interaction between excited electrons and the degenerate Fermi liquid induces a positive charge in a nanoscale region which would be negatively charged for diffusive transport at local thermal equilibrium. In a three-terminal device we observe avalanche amplification of e…
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Scattering of otherwise ballistic electrons far from equilibrium is investigated in a cold two-dimensional electron system. The interaction between excited electrons and the degenerate Fermi liquid induces a positive charge in a nanoscale region which would be negatively charged for diffusive transport at local thermal equilibrium. In a three-terminal device we observe avalanche amplification of electrical current, resulting in a situation comparable to the Venturi effect in hydrodynamics. Numerical calculations using a random phase approximation are in agreement with our data and suggest Coulomb interaction as the dominant scattering mechanism.
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Submitted 26 October, 2010; v1 submitted 28 January, 2010;
originally announced January 2010.
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Asymmetric non-linear response of the IQHE
Authors:
A. Siddiki,
J. Horas,
D. Kupidura,
W. Wegscheider,
S. Ludwig
Abstract:
An asymmetric break-down of the integer quantized Hall effect is investigated. This rectification effect is observed as a function of the current value and its direction in conjunction with an asymmetric lateral confinement potential defining the Hall-bar. Our electrostatic definition of the Hall-bar via Schottky-gates allows a systematic control of the steepness of the confinement potential at…
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An asymmetric break-down of the integer quantized Hall effect is investigated. This rectification effect is observed as a function of the current value and its direction in conjunction with an asymmetric lateral confinement potential defining the Hall-bar. Our electrostatic definition of the Hall-bar via Schottky-gates allows a systematic control of the steepness of the confinement potential at the edges of the Hall-bar. A softer edge (flatter confinement potential) results in more stable Hall-plateaus, i.e. a break-down at a larger current density. For one soft and one hard edge the break-down current depends on the current direction, resembling rectification. This non-linear magneto-transport effect confirms the predictions of an emerging screening theory of the IQHE.
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Submitted 25 November, 2009;
originally announced November 2009.
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Phonon-mediated vs. Coulombic Back-Action in Quantum Dot circuits
Authors:
D. Harbusch,
D. Taubert,
H. P. Tranitz,
W. Wegscheider,
S. Ludwig
Abstract:
Quantum point contacts (QPCs) are commonly employed to capacitively detect the charge state of coupled quantum dots (QD). An indirect back-action of a biased QPC onto a double QD laterally defined in a GaAs/AlGaAs heterostructure is observed. Energy is emitted by non-equilibrium charge carriers in the leads of the biased QPC. Part of this energy is absorbed by the double QD where it causes charg…
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Quantum point contacts (QPCs) are commonly employed to capacitively detect the charge state of coupled quantum dots (QD). An indirect back-action of a biased QPC onto a double QD laterally defined in a GaAs/AlGaAs heterostructure is observed. Energy is emitted by non-equilibrium charge carriers in the leads of the biased QPC. Part of this energy is absorbed by the double QD where it causes charge fluctuations that can be observed under certain conditions in its stability diagram. By investigating the spectrum of the absorbed energy, we identify both acoustic phonons and Coulomb interaction being involved in the back-action, depending on the geometry and coupling constants.
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Submitted 20 April, 2010; v1 submitted 21 October, 2009;
originally announced October 2009.
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Magneto-electrical subbands of freely suspended quantum point contacts
Authors:
C. Rossler,
M. Herz,
M. Bichler,
S. Ludwig
Abstract:
We present a versatile design of freely suspended quantum point contacts with particular large one-dimensional subband quantization energies of up to 10meV. The nanoscale bridges embedding a two-dimensional electron system are fabricated from AlGaAs/GaAs heterostructures by electron-beam lithography and etching techniques. Narrow constrictions define quantum point contacts that are capacitively…
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We present a versatile design of freely suspended quantum point contacts with particular large one-dimensional subband quantization energies of up to 10meV. The nanoscale bridges embedding a two-dimensional electron system are fabricated from AlGaAs/GaAs heterostructures by electron-beam lithography and etching techniques. Narrow constrictions define quantum point contacts that are capacitively controlled via local in-plane side gates. Employing transport spectroscopy, we investigate the transition from electrostatic subbands to Landau-quantization in a perpendicular magnetic field. The large subband quantization energies allow us to utilize a wide magnetic field range and thereby observe a large exchange splitted spin-gap of the two lowest Landau-levels.
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Submitted 25 May, 2009;
originally announced May 2009.
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Interaction mediated asymmetries of the quantized Hall effect
Authors:
A. Siddiki,
J. Horas,
J. Moser,
W. Wegscheider,
S. Ludwig
Abstract:
Experimental and theoretical investigations on the integer quantized Hall effect in gate defined narrow Hall bars are presented. At low electron mobility the classical (high temperature) Hall resistance line RH(B) cuts through the center of all Hall plateaus. In contrast, for our high mobility samples the intersection point, at even filling factors ν= 2; 4 ..., is clearly shifted towards larger…
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Experimental and theoretical investigations on the integer quantized Hall effect in gate defined narrow Hall bars are presented. At low electron mobility the classical (high temperature) Hall resistance line RH(B) cuts through the center of all Hall plateaus. In contrast, for our high mobility samples the intersection point, at even filling factors ν= 2; 4 ..., is clearly shifted towards larger magnetic fields B. This asymmetry is in good agreement with predictions of the screening theory, i. e. taking Coulomb interaction into account. The observed effect is directly related to the formation of incompressible strips in the Hall bar. The spin-split plateau at ν= 1 is found to be almost symmetric regardless of the mobility. We explain this within the so-called effective g-model.
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Submitted 2 May, 2009;
originally announced May 2009.
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Phonon-mediated non-equilibrium interaction between nanoscale devices
Authors:
G. J. Schinner,
H. P. Tranitz,
W. Wegscheider,
J. P. Kotthaus,
S. Ludwig
Abstract:
Interactions between mesoscopic devices induced by interface acoustic phonons propagating in the plane of a two-dimensional electron system (2DES) are investigated by phonon-spectroscopy. In our experiments ballistic electrons injected from a biased quantum point contact emit phonons and a portion of them are reabsorbed exciting electrons in a nearby degenerate 2DES. We perform energy spectrosco…
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Interactions between mesoscopic devices induced by interface acoustic phonons propagating in the plane of a two-dimensional electron system (2DES) are investigated by phonon-spectroscopy. In our experiments ballistic electrons injected from a biased quantum point contact emit phonons and a portion of them are reabsorbed exciting electrons in a nearby degenerate 2DES. We perform energy spectroscopy on these excited electrons employing a tunable electrostatic barrier in an electrically separate and unbiased detector circuit. The transferred energy is found to be bounded by a maximum value corresponding to Fermi-level electrons excited and back-scattered by absorbing interface phonons. Our results imply that phonon-mediated interaction plays an important role for the decoherence of solid-state-based quantum circuits.
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Submitted 22 January, 2009;
originally announced January 2009.
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A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure
Authors:
J. Sailer,
V. Lang,
G. Abstreiter,
G. Tsuchiya,
K. M. Itoh,
J. W. Ager III,
E. E. Haller,
D. Kupidura,
D. Harbusch,
S. Ludwig,
D. Bougeard
Abstract:
We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibit…
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We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibits a mobility of 18000 cm2/Vs at a sheet carrier density of 4.6E11 cm-2 at low temperatures. Feasibility of reliable gating is demonstrated by transport through split-gate structures realized with palladium Schottky top-gates which effectively control the two-dimensional electron system underneath. Our work forms the basis for the realization of an electrostatically defined quantum dot in a nuclear spin free environment.
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Submitted 16 January, 2009;
originally announced January 2009.
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Optically induced transport properties of freely suspended semiconductor submicron channels
Authors:
C. Rossler,
K. -D. Hof,
S. Manus,
S. Ludwig,
J. P. Kotthaus,
J. Simon,
A. W. Holleitner,
D. Schuh,
W. Wegscheider
Abstract:
We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodo** effect. The hereby enhanced electronic conductance exhibits a ti…
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We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodo** effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds.
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Submitted 15 May, 2008;
originally announced May 2008.
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Nonequilibrium phenomena in adjacent electrically isolated nanostructures
Authors:
V. S. Khrapai,
S. Ludwig,
J. P. Kotthaus,
H. P. Tranitz,
W. Wegscheider
Abstract:
We report on nonequilibrium interaction phenomena between adjacent but electrostatically separated nanostructures in GaAs. A current flowing in one externally biased nanostructure causes an excitation of electrons in a circuit of a second nanostructure. As a result we observe a dc current generated in the unbiased second nanostructure. The results can be qualitatively explained in terms of acous…
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We report on nonequilibrium interaction phenomena between adjacent but electrostatically separated nanostructures in GaAs. A current flowing in one externally biased nanostructure causes an excitation of electrons in a circuit of a second nanostructure. As a result we observe a dc current generated in the unbiased second nanostructure. The results can be qualitatively explained in terms of acoustic phonon based energy transfer between the two mutually isolated circuits.
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Submitted 6 May, 2008;
originally announced May 2008.
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Nonequilibrium interactions between two quantum circuits
Authors:
V. S. Khrapai,
S. Ludwig,
J. P. Kotthaus,
H. P. Tranitz,
W. Wegscheider
Abstract:
We briefly overview our recent results on nonequilibrium interactions between neighboring electrically isolated nanostructures. One of the nanostructures is represented by an externally biased quantum point contact (drive-QPC), which is used to supply energy quanta to the second nanostructure (detector). Absorption of these nonequilibrium quanta of energy generates a dc-current in the detector,…
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We briefly overview our recent results on nonequilibrium interactions between neighboring electrically isolated nanostructures. One of the nanostructures is represented by an externally biased quantum point contact (drive-QPC), which is used to supply energy quanta to the second nanostructure (detector). Absorption of these nonequilibrium quanta of energy generates a dc-current in the detector, or changes its differential conductance. We present results for a double quantum dot, a single quantum dot or a second QPC placed in the detector circuit. In all three cases a detection of quanta with energies up to ~1 meV is possible for bias voltages across the drive-QPC in the mV range. The results are qualitatively consistent with an energy transfer mechanism based on nonequilibrium acoustic phonons.
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Submitted 25 November, 2008; v1 submitted 6 May, 2008;
originally announced May 2008.
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Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures
Authors:
C Rossler,
M Bichler,
D Schuh,
W Wegscheider,
S Ludwig
Abstract:
Free standing beams containing a two-dimensional electron system are shaped from a GaAs/AlGaAs heterostructure. Quantum point contacts and (double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investi…
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Free standing beams containing a two-dimensional electron system are shaped from a GaAs/AlGaAs heterostructure. Quantum point contacts and (double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investigate the electron-phonon-interaction.
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Submitted 29 February, 2008;
originally announced February 2008.
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Telegraph Noise in Coupled Quantum Dot Circuits Induced by a Quantum Point Contact
Authors:
D. Taubert,
M. Pioro-Ladrière,
D. Schröer,
D. Harbusch,
A. S. Sachrajda,
S. Ludwig
Abstract:
Charge detection utilizing a highly biased quantum point contact has become the most effective probe for studying few electron quantum dot circuits. Measurements on double and triple quantum dot circuits is performed to clarify a back action role of charge sensing on the confined electrons. The quantum point contact triggers inelastic transitions, which occur quite generally. Under specific devi…
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Charge detection utilizing a highly biased quantum point contact has become the most effective probe for studying few electron quantum dot circuits. Measurements on double and triple quantum dot circuits is performed to clarify a back action role of charge sensing on the confined electrons. The quantum point contact triggers inelastic transitions, which occur quite generally. Under specific device and measurement conditions these transitions manifest themselves as bounded regimes of telegraph noise within a stability diagram. A nonequilibrium transition from artificial atomic to molecular behavior is identified. Consequences for quantum information applications are discussed.
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Submitted 4 May, 2008; v1 submitted 25 January, 2008;
originally announced January 2008.
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Investigations on unconventional aspects in the quantum Hall regime of narrow gate defined channels
Authors:
J. Horas,
A. Siddiki,
J. Moser,
W. Wegscheider,
S. Ludwig
Abstract:
We report on theoretical and experimental investigations of the integer quantized Hall effect in narrow channels at various mobilities. The Hall bars are defined electrostatically in two-dimensional electron systems by biasing metal gates on the surfaces of GaAs/AlGaAs heterostructures. In the low mobility regime the classical Hall resistance line is proportional to the magnetic field as measure…
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We report on theoretical and experimental investigations of the integer quantized Hall effect in narrow channels at various mobilities. The Hall bars are defined electrostatically in two-dimensional electron systems by biasing metal gates on the surfaces of GaAs/AlGaAs heterostructures. In the low mobility regime the classical Hall resistance line is proportional to the magnetic field as measured in the high temperature limit and cuts through the center of each Hall plateau. For high mobility samples we observe in linear response measurements, that this symmetry is broken and the classical Hall line cuts the plateaus not at the center but at higher magnetic fields near the edges of the plateaus. These experimental results confirm the unconventional predictions of a model for the quantum Hall effect taking into account mutual screening of charge carriers within the Hall bar. The theory is based on solving the Poisson and Schrödinger equations in a self-consistent manner.
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Submitted 21 September, 2007; v1 submitted 8 July, 2007;
originally announced July 2007.
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Counterflow of electrons in two isolated quantum point contacts
Authors:
V. S. Khrapai,
S. Ludwig,
J. P. Kotthaus,
H. P. Tranitz,
W. Wegscheider
Abstract:
We study the interaction between two adjacent but electrically isolated quantum point contacts (QPCs). At high enough source-drain bias on one QPC, the drive QPC, we detect a finite electric current in the second, unbiased, detector QPC. The current generated at the detector QPC always flows in the opposite direction than the current of the drive QPC. The generated current is maximal, if the det…
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We study the interaction between two adjacent but electrically isolated quantum point contacts (QPCs). At high enough source-drain bias on one QPC, the drive QPC, we detect a finite electric current in the second, unbiased, detector QPC. The current generated at the detector QPC always flows in the opposite direction than the current of the drive QPC. The generated current is maximal, if the detector QPC is tuned to a transition region between its quantized conductance plateaus and the drive QPC is almost pinched-off. We interpret this counterflow phenomenon in terms of an asymmetric phonon-induced excitation of electrons in the leads of the detector QPC.
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Submitted 3 September, 2007; v1 submitted 2 April, 2007;
originally announced April 2007.
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An electrostatically defined serial triple quantum dot charged with few electrons
Authors:
D. Schröer,
A. D. Greentree,
L. Gaudreau,
K. Eberl,
L. C. L. Hollenberg,
J. P. Kotthaus,
S. Ludwig
Abstract:
A serial triple quantum dot (TQD) electrostatically defined in a GaAs/AlGaAs heterostructure is characterized by using a nearby quantum point contact as charge detector. Ground state stability diagrams demonstrate control in the regime of few electrons charging the TQD. An electrostatic model is developed to determine the ground state charge configurations of the TQD. Numerical calculations are…
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A serial triple quantum dot (TQD) electrostatically defined in a GaAs/AlGaAs heterostructure is characterized by using a nearby quantum point contact as charge detector. Ground state stability diagrams demonstrate control in the regime of few electrons charging the TQD. An electrostatic model is developed to determine the ground state charge configurations of the TQD. Numerical calculations are compared with experimental results. In addition, the tunneling conductance through all three quantum dots in series is studied. Quantum cellular automata processes are identified, which are where charge reconfiguration between two dots occurs in response to the addition of an electron in the third dot.
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Submitted 16 March, 2007;
originally announced March 2007.
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A widely tunable few electron droplet
Authors:
A. K. Huettel,
K. Eberl,
S. Ludwig
Abstract:
Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide range of coupling strengths to the leads. The weak coupling regime is described by discrete quantum states. At strong interaction with the leads Kondo phenom…
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Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide range of coupling strengths to the leads. The weak coupling regime is described by discrete quantum states. At strong interaction with the leads Kondo phenomena are observed as a function of a magnetic field. By varying gate voltages the electron droplet can, in addition, be distorted into a double quantum dot with a strong interdot tunnel coupling while kee** track of the number of trapped electrons.
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Submitted 28 February, 2007; v1 submitted 10 July, 2006;
originally announced July 2006.
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Kondo effect in a one-electron double quantum dot: Oscillations of the Kondo current in a weak magnetic field
Authors:
D. M. Schröer,
A. K. Hüttel,
K. Eberl,
S. Ludwig,
M. N. Kiselev,
B. L. Altshuler
Abstract:
We present transport measurements of the Kondo effect in a double quantum dot charged with only one or two electrons, respectively. For the one electron case we observe a surprising quasi-periodic oscillation of the Kondo conductance as a function of a small perpendicular magnetic field |B| \lesssim 50mT. We discuss possible explanations of this effect and interpret it by means of a fine tuning…
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We present transport measurements of the Kondo effect in a double quantum dot charged with only one or two electrons, respectively. For the one electron case we observe a surprising quasi-periodic oscillation of the Kondo conductance as a function of a small perpendicular magnetic field |B| \lesssim 50mT. We discuss possible explanations of this effect and interpret it by means of a fine tuning of the energy mismatch of the single dot levels of the two quantum dots. The observed degree of control implies important consequences for applications in quantum information processing.
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Submitted 27 November, 2006; v1 submitted 3 July, 2006;
originally announced July 2006.
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A double-dot quantum ratchet driven by an independently biased quantum point contact
Authors:
V. S. Khrapai,
S. Ludwig,
J. P. Kotthaus,
H. P. Tranitz,
W. Wegscheider
Abstract:
We study a double quantum dot (DQD) coupled to a strongly biased quantum point contact (QPC), each embedded in independent electric circuits. For weak interdot tunnelling we observe a finite current flowing through the unbiased Coulomb blockaded DQD in response to a strong bias on the QPC. The direction of the current through the DQD is determined by the relative detuning of the energy levels of…
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We study a double quantum dot (DQD) coupled to a strongly biased quantum point contact (QPC), each embedded in independent electric circuits. For weak interdot tunnelling we observe a finite current flowing through the unbiased Coulomb blockaded DQD in response to a strong bias on the QPC. The direction of the current through the DQD is determined by the relative detuning of the energy levels of the two quantum dots. The results are interpreted in terms of a quantum ratchet phenomenon in a DQD energized by a nearby QPC.
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Submitted 22 August, 2006; v1 submitted 14 June, 2006;
originally announced June 2006.
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Molecular states in a one-electron double quantum dot
Authors:
A. K. Huettel,
S. Ludwig,
H. Lorenz,
K. Eberl,
J. P. Kotthaus
Abstract:
The transport spectrum of a strongly tunnel-coupled one-electron double quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure is studied. At finite source-drain-voltage we demonstrate the unambiguous identification of the symmetric ground state and the antisymmetric excited state of the double well potential by means of differential conductance measurements. A sizable magnetic f…
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The transport spectrum of a strongly tunnel-coupled one-electron double quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure is studied. At finite source-drain-voltage we demonstrate the unambiguous identification of the symmetric ground state and the antisymmetric excited state of the double well potential by means of differential conductance measurements. A sizable magnetic field, perpendicular to the two-dimensional electron gas, reduces the extent of the electronic wave-function and thereby decreases the tunnel coupling. A perpendicular magnetic field also modulates the orbital excitation energies in each individual dot. By additionally tuning the asymmetry of the double well potential we can align the chemical potentials of an excited state of one of the quantum dots and the ground state of the other quantum dot. This results in a second anticrossing with a much larger tunnel splitting than the anticrossing involving the two electronic ground states.
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Submitted 5 July, 2005;
originally announced July 2005.
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Direct control of the tunnel splitting in a one-electron double quantum dot
Authors:
A. K. Huettel,
S. Ludwig,
K. Eberl,
J. P. Kotthaus
Abstract:
Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the low-energy spectrum of the double quantum dot is characterized by its quantum mechanical interdot tunnel splitting. We directly measure its magnitude by utilizin…
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Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the low-energy spectrum of the double quantum dot is characterized by its quantum mechanical interdot tunnel splitting. We directly measure its magnitude by utilizing particular anticrossing features in the stability diagram at finite source-drain bias. By modification of gate voltages defining the confinement potential as well as by variation of a perpendicular magnetic field we demonstrate the tunability of the coherent tunnel coupling.
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Submitted 3 January, 2005;
originally announced January 2005.
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Field-induced structural aging in glasses at ultra low temperatures
Authors:
S. Ludwig,
D. D. Osheroff
Abstract:
In non-equilibrium experiments on the glasses Mylar and BK7, we measured the excess dielectric response after the temporary application of a strong electric bias field at mK--temperatures. A model recently developed describes the observed long time decays qualitatively for Mylar [PRL 90, 105501, S. Ludwig, P. Nalbach, D. Rosenberg, D. Osheroff], but fails for BK7. In contrast, our results on bot…
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In non-equilibrium experiments on the glasses Mylar and BK7, we measured the excess dielectric response after the temporary application of a strong electric bias field at mK--temperatures. A model recently developed describes the observed long time decays qualitatively for Mylar [PRL 90, 105501, S. Ludwig, P. Nalbach, D. Rosenberg, D. Osheroff], but fails for BK7. In contrast, our results on both samples can be described by including an additional mechanism to the mentioned model with temperature independent decay times of the excess dielectric response. As the origin of this novel process beyond the "tunneling model" we suggest bias field induced structural rearrangements of "tunneling states" that decay by quantum mechanical tunneling.
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Submitted 17 July, 2003; v1 submitted 6 May, 2003;
originally announced May 2003.
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Dynamics of the Destruction and Rebuilding of a Dipole Gap in Glasses
Authors:
S. Ludwig,
P. Nalbach,
D. Rosenberg,
D. Osheroff
Abstract:
After a strong electric bias field was applied to a glass sample at temperatures in the millikelvin range its AC-dielectric constant increases and then decays logarithmically with time. For the polyester glass mylar we have observed the relaxation of the dielectric constant back to its initial value for several temperatures and histories of the bias field. Starting from the dipole gap theory we…
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After a strong electric bias field was applied to a glass sample at temperatures in the millikelvin range its AC-dielectric constant increases and then decays logarithmically with time. For the polyester glass mylar we have observed the relaxation of the dielectric constant back to its initial value for several temperatures and histories of the bias field. Starting from the dipole gap theory we have developed a model suggesting that the change of the dielectric constant after transient application of a bias field is only partly due to relaxational processes. In addition, non-adiabatic driving of tunneling states (TSs) by applied electric fields causes long lasting changes in the dielectric constant. Moreover, our observations indicate that at temperatures below 50 mK the relaxation of TSs is caused primarily by interactions between TSs.
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Submitted 7 December, 2002;
originally announced December 2002.
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Magnetic Field Dependent Coherent Polarization Echoes in Glasses
Authors:
S. Ludwig,
P. Nagel,
S. Hunklinger,
C. Enss
Abstract:
The unexpected finding of a strong magnetic field dependence of the dielectric properties of insulating glasses at very low temperatures has been a puzzling problem since its discovery. Several attempts have been made to explain this striking phenomenon. In order to obtain information on the origin of the magnetic field effects we have studied coherent properties of atomic tunneling systems in g…
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The unexpected finding of a strong magnetic field dependence of the dielectric properties of insulating glasses at very low temperatures has been a puzzling problem since its discovery. Several attempts have been made to explain this striking phenomenon. In order to obtain information on the origin of the magnetic field effects we have studied coherent properties of atomic tunneling systems in glasses by polarization echo experiments in magnetic fields. Our results clearly favor a model based on the assumption that nuclear quadrupoles play a crucial role for the observed magnetic field dependence.
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Submitted 9 October, 2002;
originally announced October 2002.