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X-ray and molecular dynamics study of the temperature-dependent structure of molten NaF-ZrF4
Authors:
Anubhav Wadehra,
Rajni Chahal,
Shubhojit Banerjee,
Alexander Levy,
Yifan Zhang,
Haoxuan Yan,
Daniel Olds,
Yu Zhong,
Uday Pal,
Stephen Lam,
Karl Ludwig
Abstract:
The local atomic structure of NaF-ZrF$_4$ (53-47 mol%) molten system and its evolution with temperature are examined with x-ray scattering measurements and compared with $ab-initio$ and Neural Network-based molecular dynamics (NNMD) simulations in the temperature range 515-700 °C. The machine-learning enhanced NNMD calculations offer improved efficiency while maintaining accuracy at higher distanc…
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The local atomic structure of NaF-ZrF$_4$ (53-47 mol%) molten system and its evolution with temperature are examined with x-ray scattering measurements and compared with $ab-initio$ and Neural Network-based molecular dynamics (NNMD) simulations in the temperature range 515-700 °C. The machine-learning enhanced NNMD calculations offer improved efficiency while maintaining accuracy at higher distances compared to ab-initio calculations. Looking at the evolution of the Pair Distribution Function with increasing temperature, a fundamental change in the liquid structure within the selected temperature range, accompanied by a slight decrease in overall correlation is revealed. NNMD calculations indicate the co-existence of three different fluorozirconate complexes: [ZrF$_6$]$^{2-}$, [ZrF$_7$]$^{3-}$, and [ZrF$_8$]$^{4-}$, with a temperature-dependent shift in the dominant coordination state towards a 6-coordinated Zr ion at 700°C. The study also highlights the metastability of different coordination structures, with frequent interconversions between 6 and 7 coordinate states for the fluorozirconate complex from 525 °C to 700 °C. Analysis of the Zr-F-Zr angular distribution function reveals the presence of both $"$edge-sharing$"$ and $"$corner-sharing$"$ fluorozirconate complexes with specific bond angles and distances in accord with previous studies, while the next-nearest neighbor cation-cation correlations demonstrate a clear preference for unlike cations as nearest-neighbor pairs, emphasizing non-random arrangement. These findings contribute to a comprehensive understanding of the complex local structure of the molten salt, providing insights into temperature-dependent preferences and correlations within the molten system.
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Submitted 9 March, 2024;
originally announced March 2024.
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Coherent X-ray Spectroscopy Elucidates Nanoscale Dynamics of Plasma-Enhanced Thin-Film Growth
Authors:
Peco Myint,
Jeffrey M. Woodward,
Chenyu Wang,
Xiaozhi Zhang,
Lutz Wiegart,
Andrei Fluerasu,
Randall L. Headrick,
Charles R. Eddy, Jr.,
Karl F. Ludwig
Abstract:
Sophisticated thin film growth techniques increasingly rely on the addition of a plasma component to open or widen a processing window, particularly at low temperatures. However, the addition of the plasma into the growth environment also complicates the surface dynamical evolution. Taking advantage of continued increases in accelerator-based X-ray source brilliance, this real-time study uses X-ra…
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Sophisticated thin film growth techniques increasingly rely on the addition of a plasma component to open or widen a processing window, particularly at low temperatures. However, the addition of the plasma into the growth environment also complicates the surface dynamical evolution. Taking advantage of continued increases in accelerator-based X-ray source brilliance, this real-time study uses X-ray Photon Correlation Spectroscopy (XPCS) to elucidate the nanoscale surface dynamics during Plasma-Enhanced Atomic Layer Deposition (PE-ALD) of an epitaxial indium nitride film. XPCS examines the evolution of the coherent X-ray scattering speckle pattern, which is a fingerprint of the unique sample microstructure at each moment in time. In PE-ALD, ultrathin films are synthesized from repeated cycles of alternating self-limited surface reactions induced by temporally-separated pulses of material precursor and plasma reactant, allowing the influence of each on the evolving morphology to be examined. During the heteroepitaxial 3D growth examined here, sudden changes in surface structure during initial film growth, consistent with numerous overlap** stress-relief events, are observed. When the film becomes continuous, the nanoscale surface morphology abruptly becomes long-lived with correlation time spanning the period of the experiment. Throughout the growth experiment, there is a consistent repeating pattern of correlations associated with the cyclic growth process, which is modeled as transitions between different surface states. The plasma exposure does not simply freeze in a structure that is then built upon in subsequent cycles, but rather there is considerable surface evolution during all phases of the growth cycle.
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Submitted 23 June, 2023;
originally announced June 2023.
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Local step-flow dynamics in thin film growth with desorption
Authors:
Xiaozhi Zhang,
Jeffrey G. Ulbrandt,
Peco Myint,
Andrei Fluerasu,
Lutz Wiegart,
Yugang Zhang,
Christie Nelson,
Karl F. Ludwig,
Randall L. Headrick
Abstract:
Desorption of deposited species plays a role in determining the evolution of surface morphology during crystal growth when the desorption time constant is short compared to the time to diffuse to a defect site, step edge or kink. However, experiments to directly test the predictions of these effects are lacking. Novel techniques such as \emph{in-situ} coherent X-ray scattering can provide signific…
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Desorption of deposited species plays a role in determining the evolution of surface morphology during crystal growth when the desorption time constant is short compared to the time to diffuse to a defect site, step edge or kink. However, experiments to directly test the predictions of these effects are lacking. Novel techniques such as \emph{in-situ} coherent X-ray scattering can provide significant new information. Herein we present X-ray Photon Correlation Spectroscopy (XPCS) measurements during diindenoperylene (DIP) vapor deposition on thermally oxidized silicon surfaces. DIP forms a nearly complete two-dimensional first layer over the range of temperatures studied (40 - 120 $^{\circ}$C), followed by mounded growth during subsequent deposition. Local step flow within mounds was observed, and we find that there was a terrace-length-dependent behavior of the step edge dynamics. This led to unstable growth with rapid roughening ($β>0.5$) and deviation from a symmetric error-function-like height profile. At high temperatures, the grooves between the mounds tend to close up leading to nearly flat polycrystalline films. Numerical analysis based on a 1 + 1 dimensional model suggests that terrace-length dependent desorption of deposited ad-molecules is an essential cause of the step dynamics, and it influences the morphology evolution.
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Submitted 29 May, 2023;
originally announced May 2023.
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Interplay of broken symmetry and delocalized excitations in the insulating state of 1$T$-TaS$_2$
Authors:
Xun Jia,
Anubhab Haldar,
Jungho Kim,
Yilin Wang,
Gilberto Fabbris,
Karl Ludwig,
Stefanos Kourtis,
Mary Upton,
Yu Liu,
Wenjian Lu,
Xuan Luo,
Yu-** Sun,
Diego Casa,
Sahar Sharifzadeh,
Pierre T. Darancet,
Yue Cao
Abstract:
Coexistence of localized and extended excitations is central to the macroscopic properties of correlated materials. For 5d transition metal compounds, electron correlations alone generally do not lead to a metal-insulator (Mott) transition, with insulating behavior usually resulting from their coupling with magnetic ordering and/or structural distortions. 1$T$-TaS$_2$ is a prototypical example of…
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Coexistence of localized and extended excitations is central to the macroscopic properties of correlated materials. For 5d transition metal compounds, electron correlations alone generally do not lead to a metal-insulator (Mott) transition, with insulating behavior usually resulting from their coupling with magnetic ordering and/or structural distortions. 1$T$-TaS$_2$ is a prototypical example of such correlated insulating behavior, with a high-symmetry metallic phase transforming into a distorted, charge density wave (CDW) insulating state at low temperatures. The relevance of the localized electron physics at play in 3d compounds to these 5d transition metal compounds remains an open question. We resolved this standing controversy in 1$T$-TaS$_2$ combining resonant inelastic X-ray spectroscopy and first-principles calculations. We observed five electronic excitations arising from the interband transitions of the Ta 5d orbitals and the S 3p ligand state, with none of the excitations on the order of the Mott gap. These excitations cannot be explained within the framework of standard multiplet calculations that assume a localized wavefunction, but instead, are captured by a band theory framework accounting for the low symmetry of the crystal field in the CDW state. Our findings suggest that the electronic property of 1$T$-TaS$_2$ is dominated by both plasmonic quasiparticles and inter-band transitions associated with a Drude-type response, with no resonance associated with a putative Mott transition. Our discovery provides new insights into the electron localization and the onset of insulating behavior in 5d transition metal materials.
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Submitted 12 October, 2022; v1 submitted 3 October, 2022;
originally announced October 2022.
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Early Stage Growth of Amorphous Thin Film: Average Kinetics, Nanoscale Dynamics and Pressure Dependence
Authors:
Chenyu Wang,
Karl F. Ludwig,
Christa Wagenbach,
Meliha G. Rainville,
Suresh Narayanan,
Hua Zhou,
Jeffrey G. Ulbrandt,
Randall L. Headrick
Abstract:
We used the Coherent Grazing Incidence Small Angle X-Ray Scattering (Co-GISAXS) technique to study the average kinetics and nanoscale dynamics during early-stage a-WSi$_2$ sputter deposition. The kinetic and dynamic properties are examined as a function of pressure, which is known to be a critical factor in determining final surface roughness. Surface growth kinetics and dynamics are characterized…
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We used the Coherent Grazing Incidence Small Angle X-Ray Scattering (Co-GISAXS) technique to study the average kinetics and nanoscale dynamics during early-stage a-WSi$_2$ sputter deposition. The kinetic and dynamic properties are examined as a function of pressure, which is known to be a critical factor in determining final surface roughness. Surface growth kinetics and dynamics are characterized by time parameters extracted from the height-height structure factor and correlation functions. The roughness at a given length scale reaches a maximum before relaxing down to a steady state. The lateral length scale dependence and pressure dependence are then compared among measured kinetics and dynamics time parameters. Surfaces grown at lower pressures are smoother, leading to longer correlation times. The time to reach a dynamic steady state and a kinetic steady state show contrasting pressure dependence. A dynamic steady state is reached earlier than the kinetic steady state at high pressure. A more random deposition direction and lower kinetic energy at higher pressures can explain these phenomena, along with the hypothesis that larger nanoclusters form in vapor before arriving at the surface. A continuum model is applied to simulate the overall behavior with mixed success.
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Submitted 9 December, 2021; v1 submitted 28 November, 2021;
originally announced November 2021.
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Measurement of Ehrlich-Schwoebel barrier contribution to the self-organized formation of ordered surface patterns on Ge(001)
Authors:
Peco Myint,
Denise Erb,
Xiaozhi Zhang,
Lutz Wiegart,
Yugang Zhang,
Andrei Fluerasu,
Randall L. Headrick,
Stefan Facsko,
Karl F. Ludwig, Jr
Abstract:
Normal incidence 1 keV Ar$^+$ ion bombardment leads to amorphization and ultrasmoothing of Ge at room temperature, but at elevated temperatures the Ge surface remains crystalline and is unstable to the formation of self-organized nanoscale patterns of ordered pyramid-shaped pits. The physical phenomenon distinguishing the high temperature patterning from room temperature ultrasmoothing is believed…
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Normal incidence 1 keV Ar$^+$ ion bombardment leads to amorphization and ultrasmoothing of Ge at room temperature, but at elevated temperatures the Ge surface remains crystalline and is unstable to the formation of self-organized nanoscale patterns of ordered pyramid-shaped pits. The physical phenomenon distinguishing the high temperature patterning from room temperature ultrasmoothing is believed to be a surface instability due to the Ehrlich-Schwoebel barrier for diffusing vacancies and adatoms, which is not present on the amorphous material. This real-time GISAXS study compares smoothing of a pre-patterned Ge sample at room temperature with patterning of an initially flat Ge sample at an elevated temperature. In both experiments, when the nanoscale structures are relatively small in height, the average kinetics can be explained by a linear theory. The linear theory coefficients, indicating surface stability or instability, were extracted for both experiments. A comparison between the two measurements allows estimation of the contribution of the Ehrlich-Schwoebel barrier to the self-organized formation of ordered nanoscale patterns on crystalline Ge surfaces.
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Submitted 14 August, 2020;
originally announced August 2020.
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Nanoscale dynamics during self-organized ion beam patterning of Si: II. Kr$^+$ Bombardment
Authors:
Peco Myint,
Karl F. Ludwig Jr.,
Lutz Wiegart,
Yugang Zhang,
Andrei Fluerasu,
Xiaozhi Zhang,
Randall L. Headrick
Abstract:
Despite extensive study, fundamental understanding of self-organized patterning by broad-beam ion bombardment is still incomplete and controversial. Understanding the nanopatterning of elemental semiconductors, particularly silicon, is both foundational for the broader field and of intrinsic scientific and technological interest itself. This is the second component of a two-part investigation of t…
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Despite extensive study, fundamental understanding of self-organized patterning by broad-beam ion bombardment is still incomplete and controversial. Understanding the nanopatterning of elemental semiconductors, particularly silicon, is both foundational for the broader field and of intrinsic scientific and technological interest itself. This is the second component of a two-part investigation of the kinetics and fluctuation dynamics of self-organized nanoscale ripple development on silicon during 1 keV Ar$^+$ (Part I) and Kr$^+$ bombardment. Here, it's found that the ion-enhanced viscous flow relaxation is essentially equal for Kr$^+$-induced patterning as previously found for Ar$^+$ patterning. The magnitude of the surface curvature dependent roughening rate in the early stage kinetics is larger for Kr$^+$ than for Ar$^+$, qualitatively consistent with expectations for erosive and mass redistributive contributions to the initial surface instability. As with the Ar$^+$ case, fluctuation dynamics in the late stage show a peak in correlation time at the length scale corresponding to the dominant structural feature on the surface -- the ripples. Analogy is made to the phenomenon of de Gennes narrowing in liquids, but significant differences are also pointed out. Finally, it's shown that speckle motion during the surface evolution can be analyzed to determine spatial inhomogeneities in erosion rate and ripple velocity on the surface. This allows the direction and speed of ripple motion to be measured in real time, a unique capability for measuring these fundamental parameters outside the specialized environment of FIB/SEM systems.
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Submitted 17 May, 2021; v1 submitted 23 July, 2020;
originally announced July 2020.
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Nanoscale dynamics during self-organized ion beam patterning of Si: I. Ar$^+$ Bombardment
Authors:
Peco Myint,
Karl F. Ludwig Jr.,
Lutz Wiegart,
Yugang Zhang,
Andrei Fluerasu,
Xiaozhi Zhang,
Randall L. Headrick
Abstract:
Coherent grazing-incidence small-angle X-ray scattering is used to investigate the average kinetics and the fluctuation dynamics during self-organized nanopatterning of silicon by Ar$^+$ bombardment at 65$^{\circ}$ polar angle. At early times, the surface behavior can be understood within the framework of linear theory. The transition away from the linear theory behavior is observed in the dynamic…
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Coherent grazing-incidence small-angle X-ray scattering is used to investigate the average kinetics and the fluctuation dynamics during self-organized nanopatterning of silicon by Ar$^+$ bombardment at 65$^{\circ}$ polar angle. At early times, the surface behavior can be understood within the framework of linear theory. The transition away from the linear theory behavior is observed in the dynamics through the intensity correlation function. It quickly evolves to exhibit stretched exponential decay on short length scales and compressed exponential decay on length scales corresponding the dominant structural length scale - the ripple wavelength. The correlation times also peak strongly at the ripple length scale. This behavior has notable similarities but also significant differences with the phenomenon of de Gennes narrowing. Overall, this dynamics behavior is found to be consistent with simulations of a nonlinear growth model.
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Submitted 17 May, 2021; v1 submitted 23 July, 2020;
originally announced July 2020.
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de Gennes Narrowing and the Relationship Between Structure and Dynamics in Self-Organized Ion Beam Nanopatterning
Authors:
Peco Myint,
Karl F. Ludwig, Jr.,
Lutz Wiegart,
Yugang Zhang,
Andrei Fluerasu,
Xiaozhi Zhang,
Randall L. Headrick
Abstract:
Investigating the relationship between structure and dynamical processes is a central goal in condensed matter physics. Perhaps the most noted relationship between the two is the phenomenon of de Gennes narrowing, in which relaxation times in liquids are proportional to the scattering structure factor. Here a similar relationship is discovered during the self-organized ion beam nanopatterning of s…
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Investigating the relationship between structure and dynamical processes is a central goal in condensed matter physics. Perhaps the most noted relationship between the two is the phenomenon of de Gennes narrowing, in which relaxation times in liquids are proportional to the scattering structure factor. Here a similar relationship is discovered during the self-organized ion beam nanopatterning of silicon using coherent x-ray scattering. However, in contrast to the exponential relaxation of fluctuations in classic de Gennes narrowing, the dynamic surface exhibits a wide range of behaviors as a function of length scale, with a compressed exponential relaxation at lengths corresponding to the dominant structural motif - self-organized nanoscale ripples. These behaviors are reproduced in simulations of a nonlinear model describing the surface evolution. We suggest that the compressed exponential behavior observed here is due to the morphological persistence of the self-organized surface ripple patterns which form and evolve during ion beam nanopatterning.
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Submitted 14 January, 2021; v1 submitted 14 July, 2020;
originally announced July 2020.
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Coherent X-ray measurement of step-flow propagation during growth on polycrystalline thin film surfaces
Authors:
Randall L. Headrick,
Jeffrey G. Ulbrandt,
Peco Myint,
**g Wan,
Yang Li,
Andrei Fluerasu,
Yugang Zhang,
Lutz Wiegart,
Karl F. Ludwig, Jr
Abstract:
The properties of artificially grown thin films are strongly affected by surface processes during growth. Coherent X-rays provide an approach to better understand such processes and fluctuations far from equilibrium. Here we report results for vacuum deposition of C$_{60}$ on a graphene-coated surface investigated with X-ray Photon Correlation Spectroscopy in surface-sensitive conditions. Step-flo…
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The properties of artificially grown thin films are strongly affected by surface processes during growth. Coherent X-rays provide an approach to better understand such processes and fluctuations far from equilibrium. Here we report results for vacuum deposition of C$_{60}$ on a graphene-coated surface investigated with X-ray Photon Correlation Spectroscopy in surface-sensitive conditions. Step-flow is observed through measurement of the step-edge velocity in the late stages of growth after crystalline mounds have formed. We show that the step-edge velocity is coupled to the terrace length, and that there is a variation in the velocity from larger step spacing at the center of crystalline mounds to closely-spaced, more slowly propagating steps at their edges. The results extend theories of surface growth, since the behavior is consistent with surface evolution driven by processes that include surface diffusion, the motion of step-edges, and attachment at step edges with significant step-edge barriers.
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Submitted 5 May, 2019; v1 submitted 26 October, 2018;
originally announced October 2018.
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Co-GISAXS as a New Technique to Investigate Surface Growth Dynamics
Authors:
Meliha G. Rainville,
Christa Hoskin,
Jeffrey G. Ulbrandt,
Suresh Narayanan,
Alec R. Sandy,
Hua Zhou,
Randall L. Headrick,
Karl F. Ludwig Jr
Abstract:
Detailed quantitative measurement of surface dynamics during thin film growth is a major experimental challenge. Here X-ray Photon Correlation Spectroscopy with coherent hard X-rays is used in a Grazing-Incidence Small-Angle X-ray Scattering (i.e. Co-GISAXS) geometry as a new tool to investigate nanoscale surface dynamics during sputter deposition of a-Si and a-WSi$_2$ thin films. For both films,…
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Detailed quantitative measurement of surface dynamics during thin film growth is a major experimental challenge. Here X-ray Photon Correlation Spectroscopy with coherent hard X-rays is used in a Grazing-Incidence Small-Angle X-ray Scattering (i.e. Co-GISAXS) geometry as a new tool to investigate nanoscale surface dynamics during sputter deposition of a-Si and a-WSi$_2$ thin films. For both films, kinetic roughening during surface growth reaches a dynamic steady state at late times in which the intensity autocorrelation function $g_2$(q,t) becomes stationary. The $g_2$(q,t) functions exhibit compressed exponential behavior at all wavenumbers studied. The overall dynamics are complex, but the most surface sensitive sections of the structure factor and correlation time exhibit power law behaviors consistent with dynamical scaling.
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Submitted 3 August, 2015;
originally announced August 2015.
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Using coherent X-rays to directly measure the propagation velocity of defects during thin film deposition
Authors:
Jeffrey G. Ulbrandt,
Meliha G. Rainville,
Christa Hoskin,
Suresh Narayanan,
Alec R. Sandy,
Hua Zhou,
Karl F. Ludwig Jr.,
Randall L. Headrick
Abstract:
The properties of artificially grown thin films are often strongly affected by the dynamic relationship between surface growth processes and subsurface structure. Coherent mixing of X-ray signals promises to provide an approach to better understand such processes. Here, we demonstrate the continuously variable mixing of surface and bulk scattering signals during real-time studies of sputter deposi…
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The properties of artificially grown thin films are often strongly affected by the dynamic relationship between surface growth processes and subsurface structure. Coherent mixing of X-ray signals promises to provide an approach to better understand such processes. Here, we demonstrate the continuously variable mixing of surface and bulk scattering signals during real-time studies of sputter deposition of a-Si and a-WiS2 films by controlling the X-ray penetration and escape depths in coherent grazing incidence small angle X-ray scattering (Co-GISAXS). Under conditions where the X-ray signal comes from both the growth surface and the thin film bulk, oscillations in temporal correlations arise from coherent interference between scattering from stationary bulk features and from the advancing surface. We also observe evidence that elongated bulk features propagate upward at the same velocity as the surface. Additionally, a highly surface sensitive mode is demonstrated that can access the surface dynamics independently of the subsurface structure.
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Submitted 30 September, 2015; v1 submitted 13 July, 2015;
originally announced July 2015.
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Atomic layer deposition-based tuning of the pore size in mesoporous thin films studied by in situ grazing incidence small angle x-ray scattering
Authors:
Jolien Dendooven,
Kilian Devloo-Casier,
Matthias Ide,
Kathryn Grandfield,
Mert Kurttepeli,
Karl F. Ludwig,
Sara Bals,
Pascal Van Der Voort,
Christophe Detavernier
Abstract:
Atomic layer deposition (ALD) enables the conformal coating of porous materials, making the technique suitable for pore size tuning at the atomic level, e.g., for applications in catalysis, gas separation and sensing. It is, however, not straightforward to obtain information about the conformality of ALD coatings deposited in pores with diameters in the low mesoporous regime (< 10 nm). In this wor…
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Atomic layer deposition (ALD) enables the conformal coating of porous materials, making the technique suitable for pore size tuning at the atomic level, e.g., for applications in catalysis, gas separation and sensing. It is, however, not straightforward to obtain information about the conformality of ALD coatings deposited in pores with diameters in the low mesoporous regime (< 10 nm). In this work, it is demonstrated that in situ synchrotron based grazing incidence small angle x-ray scattering (GISAXS) can provide valuable information on the change in density and internal surface area during ALD of TiO2 in a porous titania film with small mesopores (3-8 nm). The results are shown to be in good agreement with in situ x-ray fluorescence data representing the evolution of the amount of Ti atoms deposited in the porous film. Analysis of both data sets indicates that the minimum pore diameter that can be achieved by ALD is determined by the size of the Ti-precursor molecule.
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Submitted 25 February, 2015;
originally announced February 2015.
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Supplemental Material for "High Contrast X-ray Speckle from Atomic-Scale Order in Liquids and Glasses"
Authors:
S. O. Hruszkewycz,
M. Sutton,
P. H. Fuoss,
B. Adams,
S. Rosenkranz,
K. F. Ludwig Jr.,
W. Roseker,
D. Fritz,
M. Cammarata,
D. Zhu,
S. Lee,
H. Lemke,
C. Gutt,
A. Robert,
G. Gruebel,
G. B. Stephenson
Abstract:
This supplemental material gives additional detail on Experimental Methods and Hard X-ray FEL Source Characteristics, Calculation of Maximum Speckle Contrast, Extracting Contrast of Weak Speckle Patterns, Estimated Temperature Increase from X-ray Absorption, Split-Pulse XPCS Feasibility, and Sample Disturbance During Single Pulses.
This supplemental material gives additional detail on Experimental Methods and Hard X-ray FEL Source Characteristics, Calculation of Maximum Speckle Contrast, Extracting Contrast of Weak Speckle Patterns, Estimated Temperature Increase from X-ray Absorption, Split-Pulse XPCS Feasibility, and Sample Disturbance During Single Pulses.
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Submitted 10 July, 2012;
originally announced July 2012.
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High Contrast X-ray Speckle from Atomic-Scale Order in Liquids and Glasses
Authors:
S. O. Hruszkewycz,
M. Sutton,
P. H. Fuoss,
B. Adams,
S. Rosenkranz,
K. F. Ludwig Jr.,
W. Roseker,
D. Fritz,
M. Cammarata,
D. Zhu,
S. Lee,
H. Lemke,
C. Gutt,
A. Robert,
G. Gruebel,
G. B. Stephenson
Abstract:
The availability of ultrafast pulses of coherent hard x-rays from the Linac Coherent Light Source opens new opportunities for studies of atomic-scale dynamics in amorphous materials. Here we show that single ultrafast coherent x-ray pulses can be used to observe the speckle contrast in the high-angle diffraction from liquid Ga and glassy Ni2Pd2P and B2O3. We determine the thresholds above which th…
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The availability of ultrafast pulses of coherent hard x-rays from the Linac Coherent Light Source opens new opportunities for studies of atomic-scale dynamics in amorphous materials. Here we show that single ultrafast coherent x-ray pulses can be used to observe the speckle contrast in the high-angle diffraction from liquid Ga and glassy Ni2Pd2P and B2O3. We determine the thresholds above which the x-ray pulses disturb the atomic arrangements. Furthermore, high contrast speckle is observed in scattering patterns from the glasses integrated over many pulses, demonstrating that the source and optics are sufficiently stable for x-ray photon correlation spectroscopy studies of dynamics over a wide range of time scales.
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Submitted 10 July, 2012;
originally announced July 2012.
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Wave chaos in the non-equilibrium dynamics of the Gross-Pitaevskii equation
Authors:
Iva Brezinova,
Lee Collins,
Katharina Ludwig,
Barry Schneider,
Joachim Burgdorfer
Abstract:
The Gross-Pitaevskii equation (GPE) plays an important role in the description of Bose-Einstein condensates (BECs) at the mean-field level. The GPE belongs to the class of non-linear Schrödinger equations which are known to feature dynamical instability and collapse for attractive non-linear interactions. We show that the GPE with repulsive non-linear interactions typical for BECs features chaotic…
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The Gross-Pitaevskii equation (GPE) plays an important role in the description of Bose-Einstein condensates (BECs) at the mean-field level. The GPE belongs to the class of non-linear Schrödinger equations which are known to feature dynamical instability and collapse for attractive non-linear interactions. We show that the GPE with repulsive non-linear interactions typical for BECs features chaotic wave dynamics. We find positive Lyapunov exponents for BECs expanding in periodic and aperiodic smooth external potentials as well as disorder potentials. Our analysis demonstrates that wave chaos characterized by the exponential divergence of nearby initial wavefunctions is to be distinguished from the notion of non-integrability of non-linear wave equations. We discuss the implications of these observations for the limits of applicability of the GPE, the problem of Anderson localization, and the properties of the underlying many-body dynamics.
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Submitted 4 May, 2011; v1 submitted 24 January, 2011;
originally announced January 2011.
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Wavelength Tunability of Ion-bombardment Induced Ripples on Sapphire
Authors:
Hua Zhou,
Yi** Wang,
Lan Zhou,
Randall L. Headrick,
Ahmet S. Ozcan,
Yiyi Wang,
Gozde Ozaydin,
Karl F. Ludwig Jr.,
D. Peter Siddons
Abstract:
A study of ripple formation on sapphire surfaces by 300-2000 eV Ar+ ion bombardment is presented. Surface characterization by in-situ synchrotron grazing incidence small angle x-ray scattering and ex-situ atomic force microscopy is performed in order to study the wavelength of ripples formed on sapphire (0001) surfaces. We find that the wavelength can be varied over a remarkably wide range-nearl…
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A study of ripple formation on sapphire surfaces by 300-2000 eV Ar+ ion bombardment is presented. Surface characterization by in-situ synchrotron grazing incidence small angle x-ray scattering and ex-situ atomic force microscopy is performed in order to study the wavelength of ripples formed on sapphire (0001) surfaces. We find that the wavelength can be varied over a remarkably wide range-nearly two orders of magnitude-by changing the ion incidence angle. Within the linear theory regime, the ion induced viscous flow smoothing mechanism explains the general trends of the ripple wavelength at low temperature and incidence angles larger than 30. In this model, relaxation is confined to a few-nm thick damaged surface layer. The behavior at high temperature suggests relaxation by surface diffusion. However, strong smoothing is inferred from the observed ripple wavelength near normal incidence, which is not consistent with either surface diffusion or viscous flow relaxation.
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Submitted 8 August, 2006;
originally announced August 2006.
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Temperature dependence of the diffuse scattering fine structure in equiatomic CuAu
Authors:
O. Malis,
K. F. Ludwig, Jr.,
W. Schweika,
G. E. Ice,
C. J. Sparks
Abstract:
The temperature dependence of the diffuse scattering fine structure from disordered equiatomic CuAu was studied using {\it in situ} x-ray scattering. In contrast to Cu$_3$Au the diffuse peak splitting in CuAu was found to be relatively insensitive to temperature. Consequently, no evidence for a divergence of the antiphase length-scale at the transition temperature was found. At all temperatures…
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The temperature dependence of the diffuse scattering fine structure from disordered equiatomic CuAu was studied using {\it in situ} x-ray scattering. In contrast to Cu$_3$Au the diffuse peak splitting in CuAu was found to be relatively insensitive to temperature. Consequently, no evidence for a divergence of the antiphase length-scale at the transition temperature was found. At all temperatures studied the peak splitting is smaller than the value corresponding to the CuAuII modulated phase. An extended Ginzburg-Landau approach is used to explain the temperature dependence of the diffuse peak profiles in the ordering and modulation directions. The estimated mean-field instability point is considerably lower than is the case for Cu$_3$Au.
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Submitted 23 October, 1998;
originally announced October 1998.
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Monte Carlo Study of Short-Range Order and Displacement Effects in Disordered CuAu
Authors:
O. Malis,
K. F. Ludwig, Jr.,
D. L. Olmsted,
B. Chakraborty
Abstract:
The correlation between local chemical environment and atomic displacements in disordered CuAu alloy has been studied using Monte Carlo simulations based on the effective medium theory (EMT) of metallic cohesion. These simulations correctly reproduce the chemically-specific nearest-neighbor distances in the random alloy across the entire Cu\$_x\$Au\$_{1-x}\$ concentration range. In the random eq…
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The correlation between local chemical environment and atomic displacements in disordered CuAu alloy has been studied using Monte Carlo simulations based on the effective medium theory (EMT) of metallic cohesion. These simulations correctly reproduce the chemically-specific nearest-neighbor distances in the random alloy across the entire Cu\$_x\$Au\$_{1-x}\$ concentration range. In the random equiatomic CuAu alloy, the chemically specific pair distances depend strongly on the local atomic environment (i.e. fraction of like/unlike nearest neighbors). In CuAu alloy with short-range order, the relationship between local environment and displacements remains qualitatively similar. However the increase in short-range order causes the average Cu-Au distance to decrease below the average Cu-Cu distance, as it does in the ordered CuAuI phase. Many of these trends can be understood qualitatively from the different neutral sphere radii and compressibilities of the Cu and Au atoms.
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Submitted 10 August, 1998;
originally announced August 1998.
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An X-ray Scattering and Simulation Study of the Ordering Kinetics in CuAu
Authors:
K. R. Elder,
Oana Malis,
Karl Ludwig,
Bulbul Chakraborty,
Nigel Goldenfeld
Abstract:
A detailed numerical and experimental study of the ordering of the low temperature tetragonal phase of CuAu is presented. The numerical simulations are based on a coarse-grained free energy derived from electronic structure calculations of CuAu, while the experimental results are obtained from in situ x-ray scattering. Both theoretical and experimental work indicate a subtle kinetic competition…
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A detailed numerical and experimental study of the ordering of the low temperature tetragonal phase of CuAu is presented. The numerical simulations are based on a coarse-grained free energy derived from electronic structure calculations of CuAu, while the experimental results are obtained from in situ x-ray scattering. Both theoretical and experimental work indicate a subtle kinetic competition between the ordered tetragonal phase and the metastable modulated phase.
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Submitted 10 June, 1998;
originally announced June 1998.
