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Chern insulator phase realized in dual-gate-tuned MnBi2Te4 thin films grown by molecular beam epitaxy
Authors:
Yunhe Bai,
Yuanzhao Li,
Ruixuan Liu,
Jianli Luan,
Yang Chen,
Wenyu Song,
Peng-Fei Ji,
Cui Ding,
Zongwei Gao,
Qinghua Zhang,
Fanqi Meng,
Bingbing Tong,
Lin Li,
Tianchen Zhu,
Lin Gu,
Lili Wang,
**song Zhang,
Yayu Wang,
Qi-Kun Xue,
Ke He,
Yang Feng,
Xiao Feng
Abstract:
The intrinsic magnetic order, large topological-magnetic gap and rich topological phases make MnBi2Te4 a wonderful platform to study exotic topological quantum states such as axion insulator and Chern insulator. To realize and manipulate these topological phases in a MnBi2Te4 thin film, precise manipulation of the electric field across the film is essential, which requires a dual-gate structure. I…
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The intrinsic magnetic order, large topological-magnetic gap and rich topological phases make MnBi2Te4 a wonderful platform to study exotic topological quantum states such as axion insulator and Chern insulator. To realize and manipulate these topological phases in a MnBi2Te4 thin film, precise manipulation of the electric field across the film is essential, which requires a dual-gate structure. In this work, we achieve dual-gate tuning of MnBi2Te4 thin films grown with molecular beam epitaxy on SrTiO3(111) substrates by applying the substrate and an AlOx layer as the gate dielectrics of bottom and top gates, respectively. Under magnetic field of 9T and temperature of 20 mK, the Hall and longitudinal resistivities of the films show inversed gate-voltage dependence, for both top- and bottom-gates, signifying the existence of the dissipationless edge state contributed by Chern insulator phase in the ferromagnetic configuration. The maximum of the Hall resistivity only reaches 0.8 h/e2, even with dual-gate tuning, probably due to the high density of bulk carriers introduced by secondary phases. In the antiferromagnetic state under zero magnetic field, the films show normal insulator behavior. The dual-gated MnBi2Te4 thin films lay the foundation for develo** devices based on electrically tunable topological quantum states.
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Submitted 9 June, 2024;
originally announced June 2024.
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On the equivalence of two spinodal decomposition criteria with a case study of Fe${}_{15}$Co${}_{15}$Ni${}_{35}$Cu${}_{35}$ multicomponent alloy
Authors:
Hengwei Luan,
You Wu,
**gyi Kang,
Liufei Huang,
J. H. Luan,
**feng Li,
Yang Shao,
Ke-fu Yao,
Jian Lu
Abstract:
Spinodal decomposition in multicomponent alloys has attracted increasing attention due to its beneficial effect on their mechanical and functional properties and potential applications. Both based on the Cahn-Hillard equation, the reference element method (REM) and the projection matrix method (PMM) are the two main methods to predict the occurrence of spinodal decomposition in multicomponent allo…
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Spinodal decomposition in multicomponent alloys has attracted increasing attention due to its beneficial effect on their mechanical and functional properties and potential applications. Both based on the Cahn-Hillard equation, the reference element method (REM) and the projection matrix method (PMM) are the two main methods to predict the occurrence of spinodal decomposition in multicomponent alloys. In this work, it is mathematically proven that the two methods are equivalent, and therefore the advanced results based on one method can be applied to the other. Based on these methods, the $Fe{}_{15}$Co${}_{15}$Ni${}_{35}$Cu${}_{35}$ multicomponent alloy is designed as a case study. Experimental results confirm the spinodal decomposition in the heat-treated alloy, and its strength and ductility are simultaneously enhanced. This work can be the pavement for further theoretical and experimental studies on the spinodal decomposition in multicomponent alloys.
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Submitted 20 May, 2024;
originally announced May 2024.
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Interplay between electronic dephasing and localization in finite-sized Chern insulator
Authors:
Yunhe Bai,
Yuanzhao Li,
Jianli Luan,
Yang Chen,
Zongwei Gao,
Wenyu Song,
Yitian Tong,
**song Zhang,
Yayu Wang,
Junjie Qi,
Chui-Zhen Chen,
Hua Jiang,
X. C. Xie,
Ke He,
Yang Feng,
Xiao Feng,
Qi-Kun Xue
Abstract:
Anderson localization is anticipated to play a pivotal role in the manifestation of the quantum anomalous Hall effect, akin to its role in conventional quantum Hall effects. The significance of Anderson localization is particularly pronounced in elucidating the reasons behind the fragility of the observed quantum anomalous Hall state in the intrinsic magnetic topological insulator MnBi2Te4 with a…
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Anderson localization is anticipated to play a pivotal role in the manifestation of the quantum anomalous Hall effect, akin to its role in conventional quantum Hall effects. The significance of Anderson localization is particularly pronounced in elucidating the reasons behind the fragility of the observed quantum anomalous Hall state in the intrinsic magnetic topological insulator MnBi2Te4 with a large predicted magnetic gap. Here, employing varying sized MnBi2Te4 micro/nano-structures fabricated from a single molecular-beam-epitaxy-grown thin film, we have carried out a systematic size- and temperature-dependent study on the transport properties of the films regarding the quantum anomalous Hall states. The low-temperature transport properties of the finite-sized MnBi2Te4 samples can be quantitatively understood through Anderson localization, which plays an indispensable role in stabilizing the ground states. At higher temperatures, the failure of electron localization induced by an excessively short electronic dephasing length is identified as the cause of deviation from quantization. The work reveals that electronic dephasing and localization are non-negligible factors in designing high-temperature quantum anomalous Hall systems.
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Submitted 13 April, 2024;
originally announced April 2024.
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Correlation between magnetic domain structures and quantum anomalous Hall effect in epitaxial MnBi2Te4 thin films
Authors:
Yang Shi,
Yunhe Bai,
Yuanzhao Li,
Yang Feng,
Qiang Li,
Huanyu Zhang,
Yang Chen,
Yitian Tong,
Jianli Luan,
Ruixuan Liu,
Pengfei Ji,
Zongwei Gao,
Hangwen Guo,
**song Zhang,
Yayu Wang,
Xiao Feng,
Ke He,
Xiaodong Zhou,
Jian Shen
Abstract:
We use magnetic force microscopy (MFM) to study spatial uniformity of magnetization of epitaxially grown MnBi2Te4 thin films. Compared to films which exhibit no quantum anomalous Hall effect (QAH), films with QAH are observed to have more spatial uniformity of magnetization with larger domain size. The domain evolution upon magnetic field swee** indicates that the magnetic domains or the spatial…
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We use magnetic force microscopy (MFM) to study spatial uniformity of magnetization of epitaxially grown MnBi2Te4 thin films. Compared to films which exhibit no quantum anomalous Hall effect (QAH), films with QAH are observed to have more spatial uniformity of magnetization with larger domain size. The domain evolution upon magnetic field swee** indicates that the magnetic domains or the spatial nonuniformity of magnetization originates from the strong pinning of the inherent sample inhomogeneity. A direct correlation between the Hall resistivity and the domain size has been established by analyzing a series of thin films with and without QAH. Our observation shows that one has to suppress the spatial nonuniformity of magnetization to allow the Hall resistivity to be quantized. The fact that a sizable longitudinal resistivity remains even for the QAH sample suggests a quantized Hall insulator scenario. Our work provides important insights to the understanding of the quantization mechanism and the dissipation of the QAH state in MnBi2Te4 system.
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Submitted 23 January, 2024;
originally announced January 2024.
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Reentrant quantum anomalous Hall effect in molecular beam epitaxy-grown MnBi2Te4 thin films
Authors:
Yuanzhao Li,
Yunhe Bai,
Yang Feng,
Jianli Luan,
Zongwei Gao,
Yang Chen,
Yitian Tong,
Ruixuan Liu,
Su Kong Chong,
Kang L. Wang,
Xiaodong Zhou,
Jian Shen,
**song Zhang,
Yayu Wang,
Chui-Zhen Chen,
XinCheng Xie,
Xiao Feng,
Ke He,
Qi-Kun Xue
Abstract:
In this study, we investigate intrinsic magnetic topological insulator MnBi2Te4 thin films grown by molecular beam epitaxy. We observe a reentrant quantum anomalous Hall effect when the Fermi energy enters the valance band and magnetic field equals zero, indicating the emergence of the Chern Anderson insulator state. The discovery opens a new avenue for realizing the QAH effect and underscores the…
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In this study, we investigate intrinsic magnetic topological insulator MnBi2Te4 thin films grown by molecular beam epitaxy. We observe a reentrant quantum anomalous Hall effect when the Fermi energy enters the valance band and magnetic field equals zero, indicating the emergence of the Chern Anderson insulator state. The discovery opens a new avenue for realizing the QAH effect and underscores the fundamental role of both Berry curvature and Anderson localization.
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Submitted 21 January, 2024;
originally announced January 2024.
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Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films
Authors:
Yunhe Bai,
Yuanzhao Li,
Jianli Luan,
Ruixuan Liu,
Wenyu Song,
Yang Chen,
Peng-Fei Ji,
Qinghua Zhang,
Fanqi Meng,
Bingbing Tong,
Lin Li,
Yuying Jiang,
Zongwei Gao,
Lin Gu,
**song Zhang,
Yayu Wang,
Qi-Kun Xue,
Ke He,
Yang Feng,
Xiao Feng
Abstract:
The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to high temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a big challenge to achieve molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films even close to the qua…
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The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to high temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a big challenge to achieve molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films even close to the quantized regime. In this work, we report the realization of quantized anomalous Hall resistivity in MBE-grown MnBi2Te4 thin films with the chemical potential tuned by both controlled in-situ oxygen exposure and top gating. We find that elongated post-annealing obviously elevates the temperature to achieve quantization of the Hall resistivity, but also increases the residual longitudinal resistivity, indicating a picture of high-quality QAH puddles weakly coupled by tunnel barriers. These results help to clarify the puzzles in previous experimental studies on MnBi2Te4 and to find a way out of the big difficulty in obtaining MnBi2Te4 samples showing quantized transport properties.
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Submitted 17 April, 2023; v1 submitted 8 June, 2022;
originally announced June 2022.
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Gate Tunable Supercurrent in Josephson Junctions Based on Bi2Te3 Topological Insulator Thin Films
Authors:
Wei-Xiong Wu,
Yang Feng,
Yun-He Bai,
Yu-Ying Jiang,
Zong-Wei Gao,
Yuan-Zhao Li,
Jian-Li Luan,
Heng-An Zhou,
Wan-Jun Jiang,
Xiao Feng,
**-Song Zhang,
Hao Zhang,
Ke He,
Xu-Cun Ma,
Qi-Kun Xue,
Ya-Yu Wang
Abstract:
We report transport measurements on Josephson junctions consisting of Bi2Te3 topological insulator (TI) thin films contacted by superconducting Nb electrodes. For a device with junction length L = 134 nm, the critical supercurrent Ic can be modulated by an electrical gate which tunes the carrier type and density of the TI film. Ic can reach a minimum when the TI is near the charge neutrality regim…
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We report transport measurements on Josephson junctions consisting of Bi2Te3 topological insulator (TI) thin films contacted by superconducting Nb electrodes. For a device with junction length L = 134 nm, the critical supercurrent Ic can be modulated by an electrical gate which tunes the carrier type and density of the TI film. Ic can reach a minimum when the TI is near the charge neutrality regime with the Fermi energy lying close to the Dirac point of the surface state. In the p-type regime the Josephson current can be well described by a short ballistic junction model. In the n-type regime the junction is ballistic at 0.7 K < T < 3.8 K while for T < 0.7 K the diffusive bulk modes emerge and contribute a larger Ic than the ballistic model. We attribute the lack of diffusive bulk modes in the p-type regime to the formation of p-n junctions. Our work provides new clues for search of Majorana zero mode in TI-based superconducting devices.
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Submitted 8 March, 2021;
originally announced March 2021.
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Liquefaction-induced Plasticity from Entropy-boosted Amorphous Ceramics
Authors:
Haidong Bian,
Quanfeng He,
Junhua Luan,
Yu Bu,
Yong Yang,
Zhengtao Xu,
Jian Lu,
Yang Yang Li
Abstract:
Ceramics are easy to break, and very few generic mechanisms are available for improving their mechanical properties, e.g., the 1975-discovered anti-fracture mechanism is strictly limited to zirconia and hafnia. Here we report a general mechanism for achieving high plasticity through liquefaction of ceramics. We further disclose the general material design strategies to achieve this difficult task…
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Ceramics are easy to break, and very few generic mechanisms are available for improving their mechanical properties, e.g., the 1975-discovered anti-fracture mechanism is strictly limited to zirconia and hafnia. Here we report a general mechanism for achieving high plasticity through liquefaction of ceramics. We further disclose the general material design strategies to achieve this difficult task through entropy-boosted amorphous ceramics (EBACs), enabling fracture-resistant properties that can withstand severe plastic deformation (e.g., over 95%, deformed to a thickness of a few nanometers) while maintaining high hardness and reduced modulus. The findings reported here open a new route to ductile ceramics and many applications.
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Submitted 1 February, 2021;
originally announced February 2021.
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Highly Distorted Lattices in Chemically Complex Alloys Produce Ultra-Elastic Materials with Extraordinary Elinvar Effects
Authors:
Q. F. He,
J. G. Wang,
H. A. Chen,
Z. Y. Ding,
Z. Q. Zhou,
L. H. Xiong,
J. H. Luan,
J. M. Pelletier,
J. C. Qiao,
Q. Wang,
L. L. Fan,
Y. Ren,
Q. S. Zeng,
C. T. Liu,
C. W. Pao,
D. J. Srolovitz,
Y. Yang
Abstract:
Conventional crystalline alloys usually possess a low atomic size difference in order to stabilize its crystalline structure. However, in this article, we report a single phase chemically complex alloy which possesses a large atomic size misfit usually unaffordable to conventional alloys. Consequently, this alloy develops a rather complex atomic-scale chemical order and a highly distorted crystall…
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Conventional crystalline alloys usually possess a low atomic size difference in order to stabilize its crystalline structure. However, in this article, we report a single phase chemically complex alloy which possesses a large atomic size misfit usually unaffordable to conventional alloys. Consequently, this alloy develops a rather complex atomic-scale chemical order and a highly distorted crystalline structure. As a result, this crystalline alloy displays an unusually high elastic strain limit (~2%), about ten times of that of conventional alloys, and an extremely low internal friction (< 2E-4) at room temperature. More interestingly, this alloy firmly maintains its elastic modulus even when the testing temperature rises from room temperature to 900 K, which is unmatched by the existing alloys hitherto reported. From an application viewpoint, our discovery may open up new opportunities to design high precision devices usable even under an extreme environment.
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Submitted 7 January, 2021;
originally announced January 2021.
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Tunable Dirac points and zero-energy modes in periodic curved graphene superlattices
Authors:
Jianli Luan,
Kaiyi Guo,
Shangyang Li,
Tianxing Ma,
Li-Gang Wang,
Hai-Qing Lin
Abstract:
We combined periodic ripples and electrostatic potentials to form curved graphene superlattices and studied the effects of space-dependent Fermi velocity induced from curvature on their electronic properties. With equal periods and symmetric potentials, the Dirac points do not move, but their locations shift under asymmetric potentials. This shift can be tuned by curvature and potentials. Tunable…
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We combined periodic ripples and electrostatic potentials to form curved graphene superlattices and studied the effects of space-dependent Fermi velocity induced from curvature on their electronic properties. With equal periods and symmetric potentials, the Dirac points do not move, but their locations shift under asymmetric potentials. This shift can be tuned by curvature and potentials. Tunable extra gaps in band structures can appear with unequal periods. The existence of new Dirac points is proposed, such that these new Dirac points can appear under smaller potentials with curvature, and their locations can be changed even under a fixed potential by adjusting the curvature. Our results suggest that curvature provides a new possible dimension to tune the electronic properties in graphene superlattices and a platform to more easier study physics near new Dirac points.
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Submitted 28 June, 2021; v1 submitted 23 July, 2019;
originally announced July 2019.
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$\textit{Zitterbewegung}$ near new Dirac points in graphene superlattice
Authors:
Jianli Luan,
Shangyang Li,
Tianxing Ma,
Li-Gang Wang
Abstract:
New Dirac points appear when periodic potentials are applied to graphene, and there are many interesting effects near these new Dirac points. Here we investigate the $\textit{Zitterbewegung}$ effect of fermions described by a Gaussian wave packet in graphene superlattice near new Dirac points. The $\textit{Zitterbewegung}$ near different Dirac points has similar characteristics, while Fermions nea…
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New Dirac points appear when periodic potentials are applied to graphene, and there are many interesting effects near these new Dirac points. Here we investigate the $\textit{Zitterbewegung}$ effect of fermions described by a Gaussian wave packet in graphene superlattice near new Dirac points. The $\textit{Zitterbewegung}$ near different Dirac points has similar characteristics, while Fermions near new Dirac points have different group velocities in both $x$- and $y$-direction, which causes the different properties of the $\textit{Zitterbewegung}$ near new Dirac points. We also investigate the $\textit{Zitterbewegung}$ effect influenced by all Dirac points, and get the evolution with changing potential. Our intensive results suggest that graphene superlattice may provide an appropriate system to study $\textit{Zitterbewegung}$ effect near new Dirac points experimentally.
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Submitted 24 April, 2018; v1 submitted 12 December, 2017;
originally announced December 2017.
