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Superconductivity up to 14.2 K in MnB$_4$ under pressure
Authors:
Zhe-Ning Xiang,
Ying-Jie Zhang,
Qing Lu,
Qing Li,
Yiwen Li,
Tianheng Huang,
Yijie Zhu,
Yongze Ye,
Jian Sun,
Hai-Hu Wen
Abstract:
The discovery of superconductivity in 3$d$-transition metal compounds with strong magnetism is interesting but rare. Especially for Mn-based compounds, there exist only very limited materials that show superconductivity. Here, we report the discovery of superconductivity up to 14.2 K in a Mn-based material MnB$_4$. By applying high pressures, we found the continuous suppression of a weak insulatin…
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The discovery of superconductivity in 3$d$-transition metal compounds with strong magnetism is interesting but rare. Especially for Mn-based compounds, there exist only very limited materials that show superconductivity. Here, we report the discovery of superconductivity up to 14.2 K in a Mn-based material MnB$_4$. By applying high pressures, we found the continuous suppression of a weak insulating behavior and the occurrence of superconductivity after about 30 GPa. With further increasing pressure, $T_\text{c}$ is gradually enhanced and reaches the maximum value of about 14.2 K at 150 GPa with a Fermi-Liquid behavior in the normal states. The synchrotron X-ray diffraction data reveal the unchanged monoclinic (S.G: $P2_1/c$) symmetry but an unusual crossover of the lattice parameters $b$ and $c$. Theoretical calculations based on the electron-phonon coupling picture reveal a very low $T_\text{c}$ (less than 1 K), manifesting an exotic pairing mechanism beyond the Bardeen-Cooper-Schrieffer (BCS) theory. Our findings show a promising way to explore high $T_\text{c}$ superconductivity by combining the 3d-transition metal magnetic elements and light elements.
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Submitted 8 July, 2024;
originally announced July 2024.
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Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe
Authors:
Michael Chilcote,
Alessandro R. Mazza,
Qiangsheng Lu,
Isaiah Gray,
Qi Tian,
Qinwen Deng,
Duncan Moseley,
An-Hsi Chen,
Jason Lapano,
Jason S. Gardner,
Gyula Eres,
T. Zac Ward,
Erxi Feng,
Huibo Cao,
Valeria Lauter,
Michael A. McGuire,
Raphael Hermann,
David Parker,
Myung-Geun Han,
Asghar Kayani,
Gaurab Rimal,
Liang Wu,
Timothy R. Charlton,
Robert G. Moore,
Matthew Brahlek
Abstract:
The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered antiferromagnetic structure, high Neel temperature (TN ~ 310 K) and semiconducting properties. We present results on molecular beam epitaxy (MBE) grown MnTe/In…
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The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered antiferromagnetic structure, high Neel temperature (TN ~ 310 K) and semiconducting properties. We present results on molecular beam epitaxy (MBE) grown MnTe/InP(111) films. Here, it is found that the electronic and magnetic properties are driven by the natural stoichiometry of MnTe. Electronic transport and in situ angle-resolved photoemission spectroscopy show the films are natively metallic with the Fermi level in the valence band and the band structure is in good agreement with first principles calculations for altermagnetic spin-splitting. Neutron diffraction confirms that the film is antiferromagnetic with planar anisotropy and polarized neutron reflectometry indicates weak ferromagnetism, which is linked to a slight Mn-richness that is intrinsic to the MBE grown samples. When combined with the anomalous Hall effect, this work shows that the electronic response is strongly affected by the ferromagnetic moment. Altogether, this highlights potential mechanisms for controlling altermagnetic ordering for diverse spintronic applications.
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Submitted 6 June, 2024;
originally announced June 2024.
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Interfacially enhanced superconductivity in Fe(Te,Se)/Bi4Te3 heterostructures
Authors:
An-Hsi Chen,
Qiangsheng Lu,
Eitan Hershkovitz,
Miguel L. Crespillo,
Alessandro R. Mazza,
Tyler Smith,
T. Zac Ward,
Gyula Eres,
Shornam Gandhi,
Meer Muhtasim Mahfuz,
Vitalii Starchenko,
Khalid Hattar,
Joon Sue Lee,
Honggyu Kim,
Robert G. Moore,
Matthew Brahlek
Abstract:
Realizing topological superconductivity by integrating high-transition-temperature ($T_C$) superconductors with topological insulators can open new paths for quantum computing applications. Here, we report a new approach for increasing the superconducting transition temperature ($T_{C}^{onset}$) by interfacing the unconventional superconductor Fe(Te,Se) with the topological insulator Bi-Te system…
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Realizing topological superconductivity by integrating high-transition-temperature ($T_C$) superconductors with topological insulators can open new paths for quantum computing applications. Here, we report a new approach for increasing the superconducting transition temperature ($T_{C}^{onset}$) by interfacing the unconventional superconductor Fe(Te,Se) with the topological insulator Bi-Te system in the low-Se do** regime, near where superconductivity vanishes in the bulk. The critical finding is that the $T_{C}^{onset}$ of Fe(Te,Se) increases from nominally non-superconducting to as high as 12.5 K when $Bi_2Te_3$ is replaced with the topological phase $Bi_4Te_3$. Interfacing Fe(Te,Se) with $Bi_4Te_3$ is also found to be critical for stabilizing superconductivity in monolayer films where $T_{C}^{onset}$ can be as high as 6 K. Measurements of the electronic and crystalline structure of the $Bi_4Te_3$ layer reveal that a large electron transfer, epitaxial strain, and novel chemical reduction processes are critical factors for the enhancement of superconductivity. This novel route for enhancing $T_C$ in an important epitaxial system provides new insight on the nature of interfacial superconductivity and a platform to identify and utilize new electronic phases.
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Submitted 24 May, 2024;
originally announced May 2024.
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Sha** a Surface Microdroplet by Marangoni Forces along a Moving Contact Line of Four Immiscible Phases
Authors:
Haichang Yang,
Binglin Zeng,
Qiuyun Lu,
Yaowen Xing,
Xiahui Gui,
Yijun Cao,
Ben Bin Xu,
Xuehua Zhang
Abstract:
The ability to transfer microdroplets between fluid phases offers numerous advantages in various fields, enabling better control, manipulation, and utilization of small volumes of fluids in pharmaceutical formulations, microfluidics, and lab-on-a-chip devices, single-cell analysis or droplet-based techniques for nanomaterial synthesis. This study focuses on the stability and morphology of a sessil…
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The ability to transfer microdroplets between fluid phases offers numerous advantages in various fields, enabling better control, manipulation, and utilization of small volumes of fluids in pharmaceutical formulations, microfluidics, and lab-on-a-chip devices, single-cell analysis or droplet-based techniques for nanomaterial synthesis. This study focuses on the stability and morphology of a sessile oil microdroplet at the four-phase contact line of solid-water-oil-air during the droplet transfer from underwater to air. We observed a distinct transition in microdroplet dynamics, characterized by a shift from a scenario dominated by Marangoni forces to one dominated by capillary forces. In the regime dominated by Marangoni forces, the oil microdroplets spread in response to the contact between the water-air interface and the water-oil interface and the emergence of an oil concentration gradient along the water-air interface. The spreading distance along the four-phase contact line follows a power law relationship of $t^{3/4}$, reflecting the balance between Marangoni forces and viscous forces. On the other hand, in the capillarity-dominated regime, the oil microdroplets remain stable at the contact line and after being transferred into the air. We identify the crossover between these two regimes in the parameter space defined by three factors: the approaching velocity of the solid-water-air contact line ($v_{cl}$), the radius of the oil microdroplet ($r_o$), and the radius of the water drop ($r_w$). Furthermore, we demonstrate how to use the four-phase contact line for sha** oil microdroplets using a full liquid process by the contact line lithography. The findings in this study may be also applied to materials synthesis where nanoparticles, microspheres, or nanocapsules are produced by microdroplet-based techniques.
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Submitted 24 March, 2024;
originally announced March 2024.
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Two mass-imbalanced atoms in a hard-wall trap: Deep learning integrability of many-body systems
Authors:
Liheng Lang,
Qichen Lu,
C. M. Dai,
Xingbo Wei,
Yanxia Liu,
Yunbo Zhang
Abstract:
The study of integrable systems has led to significant advancements in our understanding of many-body physics. We design a series of numerical experiments to analyze the integrability of a mass-imbalanced two-body system through energy level statistics and deep learning of wavefunctions. The level spacing distributions are fitted by a Brody distribution and the fitting parameter $ω$ is found to se…
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The study of integrable systems has led to significant advancements in our understanding of many-body physics. We design a series of numerical experiments to analyze the integrability of a mass-imbalanced two-body system through energy level statistics and deep learning of wavefunctions. The level spacing distributions are fitted by a Brody distribution and the fitting parameter $ω$ is found to separate the integrable and non-integrable mass ratios by a critical line $ω=0$. The convolutional neural network built from the probability density images could identify the transition points between integrable and non-integrable systems with high accuracy, yet in a much shorter computation time. A brilliant example of the network's ability is to identify a new integrable mass ratio $1/3$ by learning from the known integrable case of equal mass, with a remarkable network confidence of $98.78\%$. The robustness of our neural networks is further enhanced by adversarial learning, where samples are generated by standard and quantum perturbations mixed in the probability density images and the wavefunctions, respectively.
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Submitted 25 February, 2024;
originally announced February 2024.
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Engineering a High Spin Chern-Number Insulator in Epitaxial Sb Monolayer
Authors:
Jacob Cook,
Po-Yuan Yang,
Theo Volz,
Clayton Connor,
Riley Satterfield,
Joseph Berglund,
Qiangsheng Lu,
Tay-Rong Chang,
Guang Bian
Abstract:
High spin Chern-number insulator (HSCI) emerges as a novel 2D topological phase of condensed matter that is beyond the classification scheme of topological quantum chemistry. In this work, we report the observation of a semimetallic Sb monolayer with the same band topology as HSCI. Our first-principles calculations further indicate a moderate lattice strain can make Sb monolayer an insulator while…
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High spin Chern-number insulator (HSCI) emerges as a novel 2D topological phase of condensed matter that is beyond the classification scheme of topological quantum chemistry. In this work, we report the observation of a semimetallic Sb monolayer with the same band topology as HSCI. Our first-principles calculations further indicate a moderate lattice strain can make Sb monolayer an insulator while retaining the nontrivial topological order. A quantized spin Hall conductivity is found in the HSCI phase of Sb monolayer. The results suggest strained Sb monolayer as a promising platform for exploring intriguing physical properties of the exotic HSCI topological matter
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Submitted 4 December, 2023;
originally announced December 2023.
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Ferroelectric Semimetals with $α$-Bi/SnSe van der Waals heterostructures and its Topological Currents
Authors:
D. J. P. de Sousa,
Seungjun Lee,
Qiangsheng Lu,
Rob G. Moore,
Matthew Brahlek,
J-. P. Wang,
Guang Bian,
Tony Low
Abstract:
We show that proximity effects can be utilized to engineer van der Waals heterostructures (vd- WHs) displaying spin-ferroelectricity locking, where ferroelectricity and spin states are confined to different layers, but are correlated by means of proximity effects. Our findings are supported by first principles calculations in $α$-Bi/SnSe bilayers. We show that such systems support ferroelectricall…
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We show that proximity effects can be utilized to engineer van der Waals heterostructures (vd- WHs) displaying spin-ferroelectricity locking, where ferroelectricity and spin states are confined to different layers, but are correlated by means of proximity effects. Our findings are supported by first principles calculations in $α$-Bi/SnSe bilayers. We show that such systems support ferroelectrically switchable non-linear anomalous Hall effect originating from large Berry curvature dipoles as well as direct and inverse spin Hall effects with giant bulk spin-charge interconversion efficiencies. The giant efficiencies are consequences of the proximity-induced semimetallic nature of low energy electron states, which are shown to behave as two-dimensional pseudo-Weyl fermions by means of symmetry analysis, first principles calculations as well as direct angle-resolved photoemission spectroscopy measurements.
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Submitted 29 November, 2023;
originally announced November 2023.
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Ultrahigh oxygen ion mobility in ferroelectric hafnia
Authors:
Liyang Ma,
**g Wu,
Tianyuan Zhu,
Yiwei Huang,
Qiyang Lu,
Shi Liu
Abstract:
Ferroelectrics and ionic conductors are important functional materials, each supporting a plethora of applications in information and energy technology. The underlying physics governing their functional properties is ionic motion, and yet studies of ferroelectrics and ionic conductors are often considered separate fields. Based on first-principles calculations and deep-learning-assisted large-scal…
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Ferroelectrics and ionic conductors are important functional materials, each supporting a plethora of applications in information and energy technology. The underlying physics governing their functional properties is ionic motion, and yet studies of ferroelectrics and ionic conductors are often considered separate fields. Based on first-principles calculations and deep-learning-assisted large-scale molecular dynamics (MD) simulations, we report ferroelectric-switching-promoted oxygen ion transport in HfO$_2$, a wide-band-gap insulator with both ferroelectricity and ionic conductivity. Applying a unidirectional bias can activate multiple switching pathways in ferroelectric HfO$_2$, leading to polar-antipolar phase cycling that appears to contradict classical electrodynamics. This apparent conflict is resolved by the geometric-quantum-phase nature of electric polarization that carries no definite direction. Our MD simulations demonstrate bias-driven successive ferroelectric transitions facilitate ultrahigh oxygen ion mobility at moderate temperatures, highlighting the potential of combining ferroelectricity and ionic conductivity for the development of advanced materials and technologies.
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Submitted 12 June, 2023; v1 submitted 4 May, 2023;
originally announced May 2023.
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Observation of 2D Weyl Fermion States in Epitaxial Bismuthene
Authors:
Qiangsheng Lu,
P. V. Sreenivasa Reddy,
Hoyeon Jeon,
Alessandro R. Mazza,
Matthew Brahlek,
Weikang Wu,
Shengyuan A. Yang,
Jacob Cook,
Clayton Conner,
Xiaoqian Zhang,
Amarnath Chakraborty,
Yueh-Ting Yao,
Hung-Ju Tien,
Chun-Han Tseng,
Po-Yuan Yang,
Shang-Wei Lien,
Hsin Lin,
Tai-Chang Chiang,
Giovanni Vignale,
An-** Li,
Tay-Rong Chang,
Rob G. Moore,
Guang Bian
Abstract:
A two-dimensional (2D) Weyl semimetal featuring a spin-polarized linear band dispersion and a nodal Fermi surface is a new topological phase of matter. It is a solid-state realization of Weyl fermions in an intrinsic 2D system. The nontrivial topology of 2D Weyl cones guarantees the existence of a new form of topologically protected boundary states, Fermi string edge states. In this work, we repor…
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A two-dimensional (2D) Weyl semimetal featuring a spin-polarized linear band dispersion and a nodal Fermi surface is a new topological phase of matter. It is a solid-state realization of Weyl fermions in an intrinsic 2D system. The nontrivial topology of 2D Weyl cones guarantees the existence of a new form of topologically protected boundary states, Fermi string edge states. In this work, we report the realization of a 2D Weyl semimetal in monolayer-thick epitaxial bismuthene grown on SnS(Se) substrate. The intrinsic band gap of bismuthene is eliminated by the space-inversion-symmetry-breaking substrate perturbations, resulting in a gapless spin-polarized Weyl band dispersion. The linear dispersion and spin polarization of the Weyl fermion states are observed in our spin and angle-resolved photoemission measurements. In addition, the scanning tunneling microscopy/spectroscopy reveals a pronounced local density of states at the edge, suggesting the existence of Fermi string edge states. These results open the door for the experimental exploration of the exotic properties of Weyl fermion states in reduced dimensions.
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Submitted 6 March, 2023;
originally announced March 2023.
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Record-high-Tc elemental superconductivity in scandium
Authors:
Jianjun Ying,
Shiqiu Liu,
Qing Lu,
Xikai Wen,
Zhigang Gui,
Yuqing Zhang,
Xiaomeng Wang,
Jian Sun,
Xianhui Chen
Abstract:
Elemental materials provide clean and fundamental platforms for studying superconductivity. However, the highest superconducting critical temperature (Tc) yet observed in elements has not exceeded 30 K. Discovering elemental superconductors with a higher Tc is one of the most fundamental and challenging tasks in condensed matter physics. In this study, by applying high pressure up to approximately…
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Elemental materials provide clean and fundamental platforms for studying superconductivity. However, the highest superconducting critical temperature (Tc) yet observed in elements has not exceeded 30 K. Discovering elemental superconductors with a higher Tc is one of the most fundamental and challenging tasks in condensed matter physics. In this study, by applying high pressure up to approximately 260 GPa, we demonstrate that the superconducting transition temperature of elemental scandium (Sc) can be increased to 36 K, which is a record-high Tc for superconducting elements. The pressure dependence of Tc implies the occurrence of multiple phase transitions in Sc, which is in agreement with previous X-ray diffraction results. Optimization of Tc is achieved in the Sc-V phase, which can be attributed to the strong coupling between d electrons and moderate-frequency phonons, as suggested by our first-principles calculations. This study provides insights for exploring new high-Tc elemental metals.
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Submitted 28 February, 2023;
originally announced February 2023.
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Emergence of a new band and the Lifshitz transition in kagome metal ScV$_6$Sn$_6$ with charge density wave
Authors:
Seoung-Hun Kang,
Haoxiang Li,
William R. Meier,
John W. Villanova,
Saban Hus,
Hoyeon Jeon,
Hasitha W. Suriya Arachchige,
Qiangsheng Lu,
Zheng Gai,
Jonathan Denlinger,
Rob Moore,
Mina Yoon,
David Mandrus
Abstract:
Topological kagome systems have been a topic of great interest in condensed matter physics due totheir unique electronic properties. The vanadium-based kagome materials are particularly intrigu-ing since they exhibit exotic phenomena such as charge density wave (CDW) and unconventionalsuperconductivity. The origin of these electronic instabilities is not fully understood, and the re-cent discovery…
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Topological kagome systems have been a topic of great interest in condensed matter physics due totheir unique electronic properties. The vanadium-based kagome materials are particularly intrigu-ing since they exhibit exotic phenomena such as charge density wave (CDW) and unconventionalsuperconductivity. The origin of these electronic instabilities is not fully understood, and the re-cent discovery of a charge density wave in ScV6Sn6provides a new avenue for investigation. In thiswork, we investigate the electronic structure of the novel kagome metal ScV6Sn6using angle resolvedphotoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and first-principlesdensity functional theory calculations. Our analysis reveals for the first time the temperature-dependent band changes of ScV6Sn6and identifies a new band that exhibits a strong signatureof a structure with CDW below the critical temperature. Further analysis revealed that this newband is due to the surface kagome layer of the CDW structure. In addition, a Lifshitz transition isidentified in the ARPES spectra that is related to the saddle point moving across the Fermi levelat the critical temperature for the CDW formation. This result shows the CDW behavior may alsobe related to nesting of the saddle point, similar to related materials. However, no energy gap is observed at the Fermi level and thus the CDW is not a typical Fermi surface nesting scenario. These results provide new insights into the underlying physics of the CDW in the kagome materials and could have implications for the development of materials with new functionality.
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Submitted 27 February, 2023;
originally announced February 2023.
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Excitonic Insulator to Superconductor Phase Transition in Ultra-Compressed Helium
Authors:
Cong Liu,
Ion Errea,
Chris Pickard,
Lewis J. Conway,
Bartomeu Monserrat,
Yue-Wen Fang,
Chi Ding,
Qing Lu,
Jian Sun,
Jordi Boronat,
Claudio Cazorla
Abstract:
Helium, the second most abundant element in the universe, exhibits an extremely large electronic band gap of about $20$ eV at low pressures ($\le 0.1$ GPa). While the metallization pressure of hcp helium has been accurately predicted, thus far little attention has been paid to the specific mechanisms driving the band-gap closure and electronic properties of this quantum crystal in the terapascal r…
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Helium, the second most abundant element in the universe, exhibits an extremely large electronic band gap of about $20$ eV at low pressures ($\le 0.1$ GPa). While the metallization pressure of hcp helium has been accurately predicted, thus far little attention has been paid to the specific mechanisms driving the band-gap closure and electronic properties of this quantum crystal in the terapascal regime (1 TPa $= 1,000$ GPa). Here, we employ state-of-the-art density functional theory and many-body perturbation theory calculations to fill up this knowledge gap. It is found that prior to reaching metallicity bulk solid helium becomes an excitonic insulator (EI), an exotic state of matter typically observed in low-dimensional systems in which electrostatically bound electron-hole pairs form spontaneously. Furthermore, it is shown that electron-phonon coupling (EPC) is significantly enhanced across the EI to metal phase transition as signaled by prominent phonon softening and giant EPC strength values ($λ\sim 10-100$) estimated at specific reciprocal space points. Accordingly, we predict metallic helium to be a superconductor with a critical temperature of $\approx 30$ K at $20$ TPa and of $\approx 100$ K at $100$ TPa. These unforeseen phenomena have important consequences on the elastic, thermodynamic and transport properties of metallic helium hence may be critical for improving our fundamental understanding and modelling of celestial bodies.
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Submitted 17 January, 2023;
originally announced January 2023.
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Observation of Gapped Topological Surface States and Isolated Surface Resonances in PdTe$_2$ Ultrathin Films
Authors:
Jacob Cook,
Sougata Mardanya,
Qiangsheng Lu,
Clayton Conner,
James McMillen,
Chi Chen,
Mathew Snyder,
Xiaoqian Zhang,
Tay-Rong Chang,
Guang Bian
Abstract:
The superconductor PdTe$_2$ is known to host bulk Dirac bands and topological surface states. The coexistence of superconductivity and topological surface states makes PdTe$_2$ a promising platform for exploring topological superconductivity and Majorana bound states. In this work, we report the layer-by-layer molecular beam epitaxy growth and spectroscopic characterization of high quality PdTe…
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The superconductor PdTe$_2$ is known to host bulk Dirac bands and topological surface states. The coexistence of superconductivity and topological surface states makes PdTe$_2$ a promising platform for exploring topological superconductivity and Majorana bound states. In this work, we report the layer-by-layer molecular beam epitaxy growth and spectroscopic characterization of high quality PdTe$_2$ films with thickness down to 3 monolayers (ML). In the 3 ML PdTe$_2$ film, we observed spin-polarized surface resonance states, which are isolated from the bulk bands due to the quantum size effects. In addition, the hybridization of surface states on opposite faces leads to a thickness-dependent gap in the topological surface Dirac bands. Our photoemission results show clearly that the size of the hybridization gap increases as the film thickness is reduced. The success in growing high quality PdTe$_2$ films by state-of-art molecular beam epitaxy technique and the observation of surface resonances and gaped topological surface states sheds light on the applications of PdTe$_2$ quantum films in spintronics and topological computation.
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Submitted 28 September, 2022;
originally announced September 2022.
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Moiré Modulated Lattice Strain and Thickness-Dependent Lattice Expansion in Epitaxial Ultrathin Films of PdTe$_2$
Authors:
Jacob Cook,
Dorri Halbertal,
Qiangsheng Lu,
Mathew Snyder,
Yew San Hor,
Dmitri N. Basov,
Guang Bian
Abstract:
We report the epitaxial growth of PdTe$_2$ ultrathin films on topological insulator Bi$_2$Se$_3$. A prominent Moiré pattern was observed in STM measurements. The Moiré periodicity increases as film thickness decreases, indicating a lattice expansion of epitaxial PdTe$_2$ thin films with lower thicknesses. In addition, our simulations based on Moiré Metrology reveal uniaxial lattice strains at the…
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We report the epitaxial growth of PdTe$_2$ ultrathin films on topological insulator Bi$_2$Se$_3$. A prominent Moiré pattern was observed in STM measurements. The Moiré periodicity increases as film thickness decreases, indicating a lattice expansion of epitaxial PdTe$_2$ thin films with lower thicknesses. In addition, our simulations based on Moiré Metrology reveal uniaxial lattice strains at the edge of PdTe$_2$ domains, and anisotropic strain distributions throughout the Moiré supercell with a net change in lattice strain up to ~2.9%. Our DFT calculations show that this strain effect leads to a narrowing of the band gap at $Γ$ point near the Fermi level. Under a strain of ~2.8%, the band gap at $Γ$ closes completely. Further increasing the lattice strain makes the band gap reopen and the order of conduction band and valence bands inverted in energy. The results offer a proof of concept for constructing quantum grids of topological materials under the modulation of Moiré potentials.
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Submitted 22 June, 2022; v1 submitted 14 June, 2022;
originally announced June 2022.
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de Haas-van Alphen effect and the first-principles study of the possible topological stannide Cu$_3$Sn
Authors:
Chengxu Liu,
Bin Li,
Yongheng Ge,
Wen-He Jiao,
Chuanying Xi,
Yi Liu,
Chunqiang Xu,
Qi Lu,
Yunlong Li,
Hang-Qiang Qiu,
Qin-Qing Zhu,
Zhi Ren,
Ziming Zhu,
Dong Qian,
Xianglin Ke,
Xiaofeng Xu
Abstract:
The quest for quantum materials with diverse symmetry-protected topological states has been the focus of recent research interest, primarily due to their fascinating physical properties and the potential technological utility. In this work, we report on the magnetotransport, de Haas-van Alphen (dHvA) oscillations, and the first-principles calculations of the stannide Cu$_3$Sn that is isostructural…
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The quest for quantum materials with diverse symmetry-protected topological states has been the focus of recent research interest, primarily due to their fascinating physical properties and the potential technological utility. In this work, we report on the magnetotransport, de Haas-van Alphen (dHvA) oscillations, and the first-principles calculations of the stannide Cu$_3$Sn that is isostructural with the recently reported topological semimetal Ag$_3$Sn. The magnetoresistance was found to vary quasi-linearly in field. Clear dHvA oscillations were observed under a field as low as 1 Tesla at 2 K, with three major oscillation frequencies $F_α$=8.74 T, $F_β$=150.19 T and $F_γ$=229.66 T and extremely small effective masses. The analysis of dHvA quantum oscillations revealed a possible nonzero Berry phase, suggestive of the nontrivial band topology. The corroborating evidence for the nontrivial electronic topology also comes from the first-principles calculations which yield a nonzero $\mathbb{Z}_2$ topological index. These results collectively suggest that Cu$_3$Sn, in analogy to its homologue Ag$_3$Sn, may be another intermetallic stannide hosting topological Dirac fermions.
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Submitted 9 May, 2022;
originally announced May 2022.
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arXiv:2204.13026
[pdf]
physics.optics
cond-mat.mtrl-sci
cond-mat.other
physics.app-ph
physics.class-ph
Highly fabrication tolerant InP based polarization beam splitter based on p-i-n structure
Authors:
Nicolás Abadía,
Xiangyang Dai,
Qiaoyin Lu,
Wei-Hua Guo,
David Patel,
David V. Plant,
John F. Donegan
Abstract:
In this work, a novel highly fabrication tolerant polarization beam splitter (PBS) is presented on an InP platform. To achieve the splitting, we combine the Pockels effect and the plasma dispersion effect in a symmetric 1x2 Mach-Zehnder interferometer (MZI). One p-i-n phase shifter of the MZI is driven in forward bias to exploit the plasma dispersion effect and modify the phase of both the TE and…
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In this work, a novel highly fabrication tolerant polarization beam splitter (PBS) is presented on an InP platform. To achieve the splitting, we combine the Pockels effect and the plasma dispersion effect in a symmetric 1x2 Mach-Zehnder interferometer (MZI). One p-i-n phase shifter of the MZI is driven in forward bias to exploit the plasma dispersion effect and modify the phase of both the TE and TM mode. The other arm of the MZI is driven in reverse bias to exploit the Pockels effect which affects only the TE mode. By adjusting the voltages of the two phase shifters, a different interference condition can be set for the TE and the TM modes thereby splitting them at the output of the MZI. By adjusting the voltages, the very tight fabrication tolerances known for fully passive PBS are eased. The experimental results show that an extinction ratio better than 15 dB and an on-chip loss of 3.5 dB over the full C-band (1530-1565nm) are achieved.
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Submitted 19 July, 2022; v1 submitted 27 April, 2022;
originally announced April 2022.
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Surface microlenses for much more efficient photodegradation in water treatment
Authors:
Qiuyun Lu,
Qiwei Xu,
Jia Meng,
Zuo Tong How,
Pamela Chelme-Ayala,
Xihua Wang,
Mohamed Gamal El-Din,
Xuehua Zhang
Abstract:
The global need for clean water requires sustainable technology for purifying contaminated water. Highly efficient solar-driven photodegradation is a sustainable strategy for wastewater treatment. In this work, we demonstrate that the photodegradation efficiency of micropollutants in water can be improved by ~2-24 times by leveraging polymeric microlenses (MLs). These microlenses (MLs) are fabrica…
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The global need for clean water requires sustainable technology for purifying contaminated water. Highly efficient solar-driven photodegradation is a sustainable strategy for wastewater treatment. In this work, we demonstrate that the photodegradation efficiency of micropollutants in water can be improved by ~2-24 times by leveraging polymeric microlenses (MLs). These microlenses (MLs) are fabricated from the in-situ polymerization of surface nanodroplets. We found that photodegradation efficiency (η) in water correlates approximately linearly with the sum of the intensity from all focal points of MLs, although no difference in the photodegradation pathway is detected from the chemical analysis of the byproducts. With the same overall power over a given surface area, η is doubled by using ordered arrays, compared to heterogeneous MLs on an unpatterned substrate. Higher η from ML arrays may be attributed to a coupled effect from the focal points on the same plane that creates high local concentrations of active species to further speed up the rate of photodegradation. As a proof-of-concept for ML-enhanced water treatment, MLs were formed on the inner wall of glass bottles that were used as containers for water to be treated. Three representative micropollutants (norfloxacin, sulfadiazine, and sulfamethoxazole) in the bottles functionalized by MLs were photodegraded by 30% to 170% faster than in normal bottles. Our findings suggest that the ML-enhanced photodegradation may lead to a highly efficient solar water purification approach without a large solar collector size. Such an approach may be particularly suitable for portable transparent bottles in remote regions.
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Submitted 31 March, 2022;
originally announced April 2022.
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Transient dynamics of the phase transition in VO2 revealed by mega electron-volt ultrafast electron diffraction
Authors:
Chenhang Xu,
Cheng **,
Zi**g Chen,
Qi Lu,
Yun Cheng,
Bo Zhang,
Fengfeng Qi,
Jiajun Chen,
Xunqing Yin,
Guohua Wang,
Dao Xiang,
Dong Qian
Abstract:
Vanadium dioxide (VO2) exhibits an insulator-to-metal transition accompanied by a structural transition near room temperature. This transition can be triggered by an ultrafast laser pulse. Exotic transient states, such as a metallic state without structural transition, were also proposed. These unique characteristics let VO2 have great potential in thermal switchable devices and photonic applicati…
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Vanadium dioxide (VO2) exhibits an insulator-to-metal transition accompanied by a structural transition near room temperature. This transition can be triggered by an ultrafast laser pulse. Exotic transient states, such as a metallic state without structural transition, were also proposed. These unique characteristics let VO2 have great potential in thermal switchable devices and photonic applications. Although great efforts have been made, the atomic pathway during the photoinduced phase transition is still not clear. Here, we synthesized freestanding quasi-single-crystal VO2 films and examined their photoinduced structural phase transition with mega-electron-volt ultrafast electron diffraction. Leveraging the high signal-to-noise ratio and high temporal resolution, we observe that the disappearance of vanadium dimers and zigzag chains does not coincide with the transformation of crystal symmetry. After photoexcitation, the initial structure is strongly modified within 200 femtoseconds, resulting in a transient monoclinic structure without vanadium dimers and zigzag chains. Then, it continues to evolve to the final tetragonal structure in approximately 5 picoseconds. In addition, only one laser fluence threshold instead of two thresholds suggested in polycrystalline samples was observed in our quasi-single-crystal samples. Our findings provide new essential information for a comprehensive understanding of the photoinduced ultrafast phase transition in VO2.
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Submitted 23 November, 2023; v1 submitted 18 March, 2022;
originally announced March 2022.
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Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films
Authors:
Jiayuan Hu,
Wenxiang Jiang,
Guohua Wang,
Yunlong Li,
Jiangtao Wang,
**long Jiao,
Qi Lu,
Chenhang Xu,
Wentao Zhang,
Jie Ma,
Dong Qian
Abstract:
Sr-doped Bi2Se3 thin films was known as a potential candidate of topological superconductor. The magnetoresistance (MR) of SrxBi2Se3 films with various do** concentrations x were found to be dominated by weak antilocalization (WAL) at low magnetic fields, whereas the classical MR, which originally dominated the MR, was almost completely suppressed. In contrast, the MR of all samples has been obs…
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Sr-doped Bi2Se3 thin films was known as a potential candidate of topological superconductor. The magnetoresistance (MR) of SrxBi2Se3 films with various do** concentrations x were found to be dominated by weak antilocalization (WAL) at low magnetic fields, whereas the classical MR, which originally dominated the MR, was almost completely suppressed. In contrast, the MR of all samples has been observed to be dominated by linear magnetoresistance (LMR) at high magnetic fields. The LMR, having the linear dependence on carrier mobility, can be successfully explained by the Parish-Littlewood model. This indicates that LMR originates from mobility fluctuation induced by Sr dopant atoms in doped Bi2Se3 films.
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Submitted 18 February, 2022; v1 submitted 16 February, 2022;
originally announced February 2022.
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Nano-engineering the evolution of skyrmion crystal in synthetic antiferromagnets
Authors:
Mangyuan Ma,
Ke Huang,
Yong Li,
Sihua Li,
Qiyuan Feng,
Calvin Ching Ian Ang,
Tianli **,
Yalin Lu,
Qingyou Lu,
Wen Siang Lew,
Fusheng Ma,
X. Renshaw Wang
Abstract:
The evolution of skyrmion crystal encapsulates skyrmion critical behaviors, such as nucleation, deformation and annihilation. Here, we achieve a tunable evolution of artificial skyrmion crystal in nanostructured synthetic antiferromagnet multilayers, which are comprised of perpendicular magnetic multilayers and nanopatterned arrays of magnetic nanodots. The out-of-plane magnetization hysteresis lo…
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The evolution of skyrmion crystal encapsulates skyrmion critical behaviors, such as nucleation, deformation and annihilation. Here, we achieve a tunable evolution of artificial skyrmion crystal in nanostructured synthetic antiferromagnet multilayers, which are comprised of perpendicular magnetic multilayers and nanopatterned arrays of magnetic nanodots. The out-of-plane magnetization hysteresis loops and first-order reversal curves show that the nucleation and annihilation of the artificial skyrmion can be controlled by tuning the diameter of and spacing between the nanodots. Moreover, when the bottom layer thickness increases, the annihilation of skyrmion shifts from evolving into a ferromagnetic spin texture to evolving into an antiferromagnetic spin texture. Most significantly, non-volatile multiple states are realized at zero magnetic field via controlling the proportion of the annihilated skyrmions in the skyrmion crystal. Our results demonstrate the tunability and flexibility of the artificial skyrmion platform, providing a promising route to achieve skyrmion-based multistate devices, such as neuromorphic spintronic devices.
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Submitted 29 November, 2021;
originally announced November 2021.
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Observation of Unpinned Two-Dimensional Dirac States in Antimony Single Layers with Phosphorene Structure
Authors:
Qiangsheng Lu,
Matthew Snyder,
Kyle Y. Chen,
Xiaoqian Zhang,
Jacob Cook,
Duy Tung Nguyen,
P. V. Sreenivasa Reddy,
Tay-Rong Chang,
Pawel J. Kowalczyk,
Simon A. Brown,
Tai-Chang Chiang,
Shengyuan A. Yang,
Guang Bian
Abstract:
The discovery of graphene has stimulated enormous interest in two-dimensional (2D) electron gas with linear band structure. 2D Dirac materials possess many intriguing physical properties such as high carrier mobility and zero-energy Landau level thanks to the relativistic dispersion and chiral spin/pseudospin texture. 2D Dirac states discovered so far are exclusively pinned at high-symmetry points…
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The discovery of graphene has stimulated enormous interest in two-dimensional (2D) electron gas with linear band structure. 2D Dirac materials possess many intriguing physical properties such as high carrier mobility and zero-energy Landau level thanks to the relativistic dispersion and chiral spin/pseudospin texture. 2D Dirac states discovered so far are exclusively pinned at high-symmetry points of the Brillouin zone, for example, surface Dirac states at $\overlineΓ$ in topological insulators Bi$_2$Se(Te)$_3$ and Dirac cones at $K$ and $K'$ in graphene. In this work, we report the realization of 2D Dirac states at generic $k$-points in antimony atomic layers with phosphorene structure ($i.e.$ $α$-antimonene). The unpinned nature enables versatile ways to control the locations of the Dirac points in momentum space. In addition, dispersions around the unpinned Dirac points exhibit intrinsically anisotropic behaviors due to the reduced symmetry of generic momentum points. These properties make the $α$-antimonene films a promising platform for exploring interesting physics in unpinned 2D Dirac fermions that are distinct from the conventional Dirac states in graphene.
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Submitted 18 October, 2021; v1 submitted 10 October, 2021;
originally announced October 2021.
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Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3
Authors:
Xiaoqian Zhang,
Siddhesh C. Ambhire,
Qiangsheng Lu,
Wei Niu,
Jacob Cook,
Jidong Samuel Jiang,
Deshun Hong,
Laith Alahmed,
Liang He,
Rong Zhang,
Yongbing Xu,
Steven S. -L. Zhang,
Peng Li,
Guang Bian
Abstract:
Discoveries of interfacial topological Hall effect (THE) provide an ideal platform for exploring physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the strin…
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Discoveries of interfacial topological Hall effect (THE) provide an ideal platform for exploring physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures such as strong spin-orbit coupling (SOC). Here we report the observation of a giant THE signal of 1.39 $μΩ\cdot$cm in the van der Waals heterostructures of CrTe2/Bi2Te3 fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe2, strong SOC in Bi2Te3, and an atomically sharp interface. Our work reveals CrTe2/Bi2Te3 as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage.
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Submitted 23 August, 2021;
originally announced August 2021.
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Quantum percolation and magnetic nano-dropletstates in electronically phase-separated manganite nanowires
Authors:
Kaixuan Zhang,
Lin Li,
Hui Li,
Qiyuan Feng,
Nan Zhang,
Long Cheng,
Xiaodong Fan,
Yubin Hou,
Qingyou Lu,
Zhenyu Zhang,
Changgan Zeng
Abstract:
One-dimensional (1D) confinement has been revealed to effectively tune the properties of materials in homogeneous states. The 1D physics can be further enriched by electronic inhomogeneity, which unfortunately remains largely unknown. Here we demonstrate the ultra-high sensitivity to magnetic fluctuations and the tunability of phase stability in the electronic transport properties of self-assemble…
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One-dimensional (1D) confinement has been revealed to effectively tune the properties of materials in homogeneous states. The 1D physics can be further enriched by electronic inhomogeneity, which unfortunately remains largely unknown. Here we demonstrate the ultra-high sensitivity to magnetic fluctuations and the tunability of phase stability in the electronic transport properties of self-assembled electronically phase-separated manganite nanowires with extreme aspect ratio. The onset of magnetic nano-droplet state, a precursor to the ferromagnetic metallic state, is unambiguously revealed, which is attributed to the small lateral size of the nanowires that is comparable to the droplet size. Moreover, the quasi-1D anisotropy stabilizes thin insulating domains to form intrinsic tunneling junctions in the low temperature range, which is robust even under magnetic field up to 14 T, and thus essentially modifies the classic 1D percolation picture to stabilize a novel quantum percolation state. A new phase diagram is therefore established for the manganite system under quasi-1D confinement for the first time. Our findings offer new insight to understand and manipulate the colorful properties of the electronically phase-separated systems via dimensionality engineering.
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Submitted 10 August, 2021; v1 submitted 7 August, 2021;
originally announced August 2021.
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Coexistence of Ferroelectric-like Polarization and Dirac-like Surface State in TaNiTe5
Authors:
Yunlong Li,
Zhao Ran,
Chaozhi Huang,
Guanyong Wang,
Peiyue Shen,
Haili Huang,
Chunqiang Xu,
Yi Liu,
Wenhe Jiao,
Wenxiang Jiang,
Jiayuan Hu,
Gucheng Zhu,
Chenhang Xu,
Qi Lu,
Guohua Wang,
Qiang **g,
Shiyong Wang,
Zhiwen Shi,
**feng Jia,
Xiaofeng Xu,
Wentao Zhang,
Weidong Luo,
Dong Qian
Abstract:
By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), piezoresponse force microscopy (PFM) and first-principles calculations, we have studied the low-energy band structure, atomic structure and charge polarization on the surface of a topological semimetal candidate TaNiTe5. Dirac-like surface states were observed on the (010) surface by ARPES, consist…
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By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), piezoresponse force microscopy (PFM) and first-principles calculations, we have studied the low-energy band structure, atomic structure and charge polarization on the surface of a topological semimetal candidate TaNiTe5. Dirac-like surface states were observed on the (010) surface by ARPES, consistent with the first-principles calculations. On the other hand, PFM reveals a switchable ferroelectric-like polarization on the same surface. We propose that the noncentrosymmetric surface reconstruction observed by STM could be the origin of the observed ferroelectric-like state in this novel material. Our findings provide a new platform with the coexistence of ferroelectric-like surface charge distribution and novel surface states.
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Submitted 17 June, 2021;
originally announced June 2021.
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Magnetic properties of the quasi two-dimensional centered honeycomb antiferromagnet GdInO$_3$
Authors:
Xunqing Yin,
Yunlong Li,
Guohua Wang,
Jiayuan Hu,
Chenhang Xu,
Qi Lu,
Yunlei Zhong,
Jiawang Zhao,
Xiang Zhao,
Yuanlei Zhang,
Yiming Cao,
Kun Xu,
Zhe Li,
Yoshitomo Kamiya,
Guo Hong,
Dong Qian
Abstract:
The crystal structure and magnetic property of the single crystalline hexagonal rare-earth indium oxides GdInO$_3$ have been studied by combing experiments and model calculations. The two inequivalent Gd$^{3+}$ ions form the centered honeycomb lattice, which consists of honeycomb and triangular sublattices. The dc magnetic susceptibility and specific heat measurements suggest two antiferromagnetic…
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The crystal structure and magnetic property of the single crystalline hexagonal rare-earth indium oxides GdInO$_3$ have been studied by combing experiments and model calculations. The two inequivalent Gd$^{3+}$ ions form the centered honeycomb lattice, which consists of honeycomb and triangular sublattices. The dc magnetic susceptibility and specific heat measurements suggest two antiferromagnetic phase transitions at $T_\textrm{N1}$ = 2.3 K and $T_\textrm{N2}$ = 1.02 K. An inflection point is observed in the isothermal magnetization curve, which implies an up-up-down phase with a 1/3 magnetization plateau. We also observe a large magnetic entropy change originated from the magnetic frustration in GdInO$_3$. By considering a classical spin Hamiltonian, we establish the ground state phase diagram, which suggests that GdInO$_3$ has a weak easy-axis anisotropy and is close to the equilateral triangular-lattice system. The theoretical ground-state phase diagram may be used as a reference in NMR, ESR, or $μ$SR experiments in future.
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Submitted 6 September, 2021; v1 submitted 9 June, 2021;
originally announced June 2021.
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Layer-Resolved Many-Electron Interactions in Delafossite PdCoO2 from Standing-Wave Photoemission Spectroscopy
Authors:
Qiyang Lu,
Henrique Martins,
J. Matthias Kahk,
Gaurab Rimal,
Seongshik Oh,
Inna Vishik,
Matthew Brahlek,
William C. Chueh,
Johannes Lischner,
Slavomir Nemsak
Abstract:
When a three-dimensional material is constructed by stacking different two-dimensional layers into an ordered structure, new and unique physical properties can emerge. An example is the delafossite PdCoO2, which consists of alternating layers of metallic Pd and Mott-insulating CoO2 sheets. To understand the nature of the electronic coupling between the layers that gives rise to the unique properti…
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When a three-dimensional material is constructed by stacking different two-dimensional layers into an ordered structure, new and unique physical properties can emerge. An example is the delafossite PdCoO2, which consists of alternating layers of metallic Pd and Mott-insulating CoO2 sheets. To understand the nature of the electronic coupling between the layers that gives rise to the unique properties of PdCoO2, we revealed its layer-resolved electronic structure combining standing-wave X-ray photoemission spectroscopy and ab initio many-body calculations. Experimentally, we have decomposed the measured valence band spectrum into contributions from Pd and CoO2 layers. Computationally, we find that many-body interactions in Pd and CoO2 layers are highly different. Holes in the CoO2 layer interact strongly with charge-transfer excitons in the same layer, whereas holes in the Pd layer couple to plasmons in the Pd layer. Interestingly, we find that holes in states hybridized across both layers couple to both types of excitations (charge-transfer excitons or plasmons), with the intensity of photoemission satellites being proportional to the projection of the state onto a given layer. This establishes satellites as a sensitive probe for inter-layer hybridization. These findings pave the way towards a better understanding of complex many-electron interactions in layered quantum materials.
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Submitted 6 May, 2021;
originally announced May 2021.
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Superconductivity in ThMo2Si2C with Mo2C Square Net
Authors:
Zichen Liu,
Baizhuo Li,
Yusen Xiao,
Qingchen Duan,
Yanwei Cui,
YuXue Mei,
Qian Tao,
Shuli Wei,
Shugang Tan,
Qiang **g,
Qing Lu,
Yu** Sun,
Yunyan Liu,
Shenggui Fu,
Hao Jiang,
Zhi Ren,
Zhu'an Xu,
Cao Wang,
Guanghan Cao
Abstract:
We report the superconductivity of a new quaternary compound ThMo$_2$Si$_2$C, synthesized with the arc-melting technique. The compound crystallizes in a tetragonal CeCr$_2$Si$_2$C-type structure with cell parameters of $a$ = 4.2296 Åand $c$ = 5.3571 Å. An interlayer Si-Si covalent bonding is suggested by the atomic distance. The electrical resistivity and magnetic susceptibility measurements indic…
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We report the superconductivity of a new quaternary compound ThMo$_2$Si$_2$C, synthesized with the arc-melting technique. The compound crystallizes in a tetragonal CeCr$_2$Si$_2$C-type structure with cell parameters of $a$ = 4.2296 Åand $c$ = 5.3571 Å. An interlayer Si-Si covalent bonding is suggested by the atomic distance. The electrical resistivity and magnetic susceptibility measurements indicate a Pauli-paramagnetic metal with dominant electron-electron scattering in the normal-state. Bulk superconductivity at 2.2 K is demonstrated with a dimensionless specific-heat jump of $ΔC/γ_{\rm n}T$ = 0.98. The superconducting parameters of the critical magnetic fields, coherence length, penetration depth, and superconducting energy gap are given.
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Submitted 20 April, 2021;
originally announced April 2021.
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Search and localization dynamics of the CRISPR/Cas9 system
Authors:
Qiao Lu,
Deepak Bhat,
Darya Stepanenko,
Simone Pigolotti
Abstract:
The CRISPR/Cas9 system acts as the prokaryotic immune system and has important applications in gene editing. The protein Cas9 is one of its crucial components. The role of Cas9 is to search for specific target sequences on the DNA and cleave them. In this Letter, we introduce a model of facilitated diffusion for Cas9 and fit its parameters to single-molecule experiments. Our model confirms that Ca…
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The CRISPR/Cas9 system acts as the prokaryotic immune system and has important applications in gene editing. The protein Cas9 is one of its crucial components. The role of Cas9 is to search for specific target sequences on the DNA and cleave them. In this Letter, we introduce a model of facilitated diffusion for Cas9 and fit its parameters to single-molecule experiments. Our model confirms that Cas9 search for targets by sliding, but shows that its sliding length is rather short. We then investigate how Cas9 explores a long stretch of DNA containing randomly placed targets. We solve this problem by map** it into the theory of Anderson localization in condensed matter physics. Our theoretical approach rationalizes experimental evidences on the distribution of Cas9 molecules along the DNA.
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Submitted 3 October, 2021; v1 submitted 19 March, 2021;
originally announced March 2021.
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Dirac Fermion Cloning, Moir$\bf{é}$ Flat Bands and Magic Lattice Constants in Epitaxial Monolayer Graphene
Authors:
Qiangsheng Lu,
Ching-Kai Chiu,
Congcong Le,
Jacob Cook,
Xiaoqian Zhang,
Xiaoqing He,
Mohammad Zarenia,
Mitchel Vaninger,
Paul F. Miceli,
Chang Liu,
Tai-Chang Chiang,
Giovanni Vignale,
Guang Bian
Abstract:
Tuning interactions between Dirac states in graphene has attracted enormous interest because it can modify the electronic spectrum of the two-dimensional material, enhance electron correlations, and give rise to novel condensed-matter phases such as superconductors, Mott insulators, Wigner crystals and quantum anomalous Hall insulators. Previous works predominantly focus on the flat band dispersio…
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Tuning interactions between Dirac states in graphene has attracted enormous interest because it can modify the electronic spectrum of the two-dimensional material, enhance electron correlations, and give rise to novel condensed-matter phases such as superconductors, Mott insulators, Wigner crystals and quantum anomalous Hall insulators. Previous works predominantly focus on the flat band dispersion of coupled Dirac states from different graphene layers. In this work, we propose a new route to realizing flat band physics in monolayer graphene under a periodic modulation from substrates. We take gaphene/SiC heterostructure as a role model and demonstrate experimentally the substrate modulation leads to Dirac fermion cloning and consequently, the proximity of the two Dirac cones of monolayer graphene in momentum space. Our theoretical modeling captures the cloning mechanism of Dirac states and indicates that flat bands can emerge at certain magic lattice constants of substrate when the period of modulation becomes nearly commensurate with the $(\sqrt{3}\times\sqrt{3})R30^{\circ}$ supercell of graphene. The results show that the epitaxial monolayer graphene is a promising platform for exploring exotic many-body quantum phases arising from interactions between Dirac electrons.
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Submitted 18 March, 2021;
originally announced March 2021.
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Observation of Symmetry-Protected Dirac States in Nonsymmorphic $α$-Antimonene
Authors:
Qiangsheng Lu,
Kyle Y. Chen,
Matthew Snyder,
Jacob Cook,
Duy Tung Nguyen,
P. V. Sreenivasa Reddy,
Tay-Rong Chang,
Shengyuan A. Yang,
Guang Bian
Abstract:
Two-dimensional (2D) Dirac states with linear band dispersion have attracted enormous interest since the discovery of graphene. However, to date, 2D Dirac semimetals are still very rare due to the fact that 2D Dirac states are generally fragile against perturbations such as spin-orbit couplings. Nonsymmorphic crystal symmetries can enforce the formation of Dirac nodes, providing a new route to est…
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Two-dimensional (2D) Dirac states with linear band dispersion have attracted enormous interest since the discovery of graphene. However, to date, 2D Dirac semimetals are still very rare due to the fact that 2D Dirac states are generally fragile against perturbations such as spin-orbit couplings. Nonsymmorphic crystal symmetries can enforce the formation of Dirac nodes, providing a new route to establishing symmetry-protected Dirac states in 2D materials. Here we report the symmetry-protected Dirac states in nonsymmorphic alpha-antimonene. The antimonene was synthesized by the method of molecular beam epitaxy. Two Dirac cones with large anisotropy were observed by angle-resolved photoemission spectroscopy. The Dirac state in alpha-antimonene is of spin-orbit type in contrast to the spinless Dirac states in graphene. The result extends the 'graphene' physics into a new family of 2D materials where spin-orbit coupling is present.
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Submitted 10 October, 2021; v1 submitted 14 January, 2021;
originally announced January 2021.
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Realization of electron antido** by modulating the breathing distortion in BaBiO$_3$
Authors:
Hui Cao,
Hongli Guo,
Yu-Cheng Shao,
Qixin Liu,
Xuefei Feng,
Qinwen Lu,
Zheng** Wang,
Aidi Zhao,
Atsushi Fujimori,
Yi-De Chuang,
Hua Zhou,
Xiaofang Zhai
Abstract:
The recent proposal of antido** scheme breaks new ground in conceiving conversely functional materials and devices, yet the few available examples belong to the correlated electron systems. Here we demonstrate both theoretically and experimentally that the main group oxide BaBiO$_3$ is a model system for antido** using oxygen vacancies. The first principles calculations show that the band gap…
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The recent proposal of antido** scheme breaks new ground in conceiving conversely functional materials and devices, yet the few available examples belong to the correlated electron systems. Here we demonstrate both theoretically and experimentally that the main group oxide BaBiO$_3$ is a model system for antido** using oxygen vacancies. The first principles calculations show that the band gap systematically increases due to the strongly enhanced BiO breathing distortions away from the vacancies and the annihilation of Bi 6s and O 2p hybridized conduction bands near the vacancies. The spectroscopic experiments confirm the band gap increasing systematically with electron do**, with a maximal gap enhancement of 75% when the film's stoichiometry is reduced to BaBiO$_{2.75}$. The Raman and diffraction experiments show the suppression of the overall breathing distortion. The study unambiguously demonstrates the remarkable antido** effect in a material without strong electron correlations and underscores the importance of bond disproportionation in realizing such an effect.
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Submitted 7 January, 2021;
originally announced January 2021.
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Surface Josephson plasma waves in a high-temperature superconductor
Authors:
Q. Lu,
A. T. Bollinger,
X. He,
R. Sundling,
I. Bozovic,
A. Gozar
Abstract:
Electron density oscillations with acoustic dispersions and sustained at boundaries between different media provide information about surface and interface properties of hetero-structures. In ultra-thin metallic films these plasmonic excitations are heavily damped. Superconductivity is predicted to reduce dissipation allowing detection of these resonances. Emerging low-loss interface Cooper-pair w…
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Electron density oscillations with acoustic dispersions and sustained at boundaries between different media provide information about surface and interface properties of hetero-structures. In ultra-thin metallic films these plasmonic excitations are heavily damped. Superconductivity is predicted to reduce dissipation allowing detection of these resonances. Emerging low-loss interface Cooper-pair waves have been studied before, however, the observation of surface-confined Josephson plasmons has remained elusive. Here, we report on generation and coupling to these excitations in an ultrathin single-crystal film of high-temperature superconductor La1.85Sr0.15CuO4. The film becomes brighter than Au below the critical temperature when probed with sub-gap THz photons. We show that the enhanced signal in the superconducting state, which can be visualized with a spatial resolution better than λ/3,000, originates from near-field coupling of light to surface Josephson plasmons. Our results open a path towards non-invasive investigation of enhanced superconductivity in artificial multilayers, buried interface states in topological hetero-structures, and non-linear phenomena in Josephson devices.
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Submitted 7 October, 2020; v1 submitted 18 September, 2020;
originally announced September 2020.
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Spin soliton of Holstein model with spin-orbit coupling in one-dimensional conjugated polymers
Authors:
Shijie Xie,
Xiaohui Liu,
Qiuxia Lu,
Sun Yin
Abstract:
For Holstein model with Rashba spin-orbit coupling (SOC) we establish the nonlinear Schrödinger equations and obtain exact soliton solution analytically. It is found that the soliton is spin polarized determined both by the SOC and the electron-phonon (e-ph) interaction. The soliton can be used to describe the spin transport or spin current in organic semiconductors.
For Holstein model with Rashba spin-orbit coupling (SOC) we establish the nonlinear Schrödinger equations and obtain exact soliton solution analytically. It is found that the soliton is spin polarized determined both by the SOC and the electron-phonon (e-ph) interaction. The soliton can be used to describe the spin transport or spin current in organic semiconductors.
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Submitted 25 April, 2020;
originally announced April 2020.
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The Layer-inserting Growth of Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$ Based on Symmetry and Its X-ray Photoelectron Spectroscopy
Authors:
Fei Jiao,
**gfeng Wang,
Xianyu Wang,
Meixia Chang,
Lingbo Cai,
Shu Zhu,
Di Zhang,
Qing Lu,
Cao Wang,
Shugang Tan,
Yunlong Li,
Jiayuan Hu,
Qiang **g,
Bo Liu,
Dong Qian
Abstract:
The antiferromagnetic topological insulator has attracted lots of attention recently, as its intrinsic magnetism and topological property makes it a potential material to realize the quantum anomalous Hall effect (QAHE) at relative high temperature. Until now, only MnBi$_2$Te$_4$ is predicted and grown successfully. The other MB$_2$T$_4$-family materials predicted (MB$_2$T$_4$:M=transition-metal o…
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The antiferromagnetic topological insulator has attracted lots of attention recently, as its intrinsic magnetism and topological property makes it a potential material to realize the quantum anomalous Hall effect (QAHE) at relative high temperature. Until now, only MnBi$_2$Te$_4$ is predicted and grown successfully. The other MB$_2$T$_4$-family materials predicted (MB$_2$T$_4$:M=transition-metal or rare-earth element, B=Bi or Sb, T=Te, Se, or S) with not only antiferromagnetic topological property but also rich and exotic topological quantum states and dynamically stable (or metastable) structure have not been realized on experiment completely. Here, MnBi$_2$Te$_4$ single crystals have been grown successfully and tested. It shows typical antiferromagnetic character, with Neel temperature of 24.5K and a spin-flop transition at H$\thickapprox$35000 Oe, 1.8K. After obtaining MnBi$_2$Te$_4$ single crystals, we have tried to synthesize the other members of MB$_2$T$_4$-family materials, but things are not going so well. Then it inspires us to discuss the growth mechanism of MnBi$_2$Te$_4$. The growth mode may be the layer-inserting growth mode based on symmetry, which is supported by our X-ray photoelectron spectroscopy (XPS) measurement. The XPS measurement combing with the $Ar^+$ ion sputtering is done to investigate the chemical state of MnBi$_2$Te$_4$. Binding energies (BE) of the MnBi$_2$Te$_4$-related contributions to Mn2p and Te3d spectra agree well with those of inserting material $α$-MnTe. Rising intensity of the Mn2p satellite for divalent Mn (bound to chalcogen) with atomic number of ligand (from MnO to MnBi$_2$Te$_4$) has been observed, thus suggesting classification of MnBi$_2$Te$_4$ as the charge-transfer compound. Understanding the growth mode of MnBi$_2$Te$_4$ can help us to grow the other members of MB$_2$T$_4$-family materials.
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Submitted 3 November, 2020; v1 submitted 18 February, 2020;
originally announced February 2020.
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Electronic and magnetic properties of perovskite selenite and tellurite compounds: CoSeO$_3$, NiSeO$_3$, CoTeO$_3$ and NiTeO$_3$
Authors:
A. Rafi M. Iasir,
Todd Lombardi,
Qiangsheng Lu,
Amir M. Mofrad,
Mitchel Vaninger,
Xiaoqian Zhang,
David J. Singh
Abstract:
Selenium and tellurium are among the few elements that form $AB$O$_3$ perovskite structures with a four valent ion in the $A$ site. This leads to highly distorted structures and unusual magnetic behavior. Here we investigate the Co and Ni selenite and tellurite compounds, CoSeO$_3$, CoTeO$_3$, NiSeO$_3$ and NiTeO$_3$ using first principles calculations. We find an interplay of crystal field and Ja…
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Selenium and tellurium are among the few elements that form $AB$O$_3$ perovskite structures with a four valent ion in the $A$ site. This leads to highly distorted structures and unusual magnetic behavior. Here we investigate the Co and Ni selenite and tellurite compounds, CoSeO$_3$, CoTeO$_3$, NiSeO$_3$ and NiTeO$_3$ using first principles calculations. We find an interplay of crystal field and Jahn-Teller distortions that underpin the electronic and magnetic properties. While all compounds are predicted to show an insulating G-type antiferromagnetic ground state, there is a considerable difference in the anisotropy of the exchange interactions between the Ni and Co compounds. This is related to the Jahn-Teller distortion. Finally, we observe that these four compounds show characteristics generally associated with Mott insulators, even when described at the level of standard density functional theory. These are then dense bulk band or Slater, Mott-type insulators.
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Submitted 22 October, 2019;
originally announced October 2019.
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Controllable thickness inhomogeneity and Berry-curvature-engineering of anomalous Hall effect in SrRuO3 ultrathin films
Authors:
Lingfei Wang,
Qiyuan Feng,
Han Gyeol Lee,
Eun Kyo Ko,
Qingyou Lu,
Tae Won Noh
Abstract:
In quantum matters hosting electron-electron correlation and spin-orbit coupling, spatial inhomogeneities, arising from competing ground states, can be essential for determining and understanding topological properties. A prominent example is Hall anomalies observed in SrRuO3 films, which were interpreted in terms of either magnetic skyrmion-induced topological Hall effect (THE) or inhomogeneous a…
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In quantum matters hosting electron-electron correlation and spin-orbit coupling, spatial inhomogeneities, arising from competing ground states, can be essential for determining and understanding topological properties. A prominent example is Hall anomalies observed in SrRuO3 films, which were interpreted in terms of either magnetic skyrmion-induced topological Hall effect (THE) or inhomogeneous anomalous Hall effect (AHE). To clarify this ambiguity, we systematically investigated the AHE of SrRuO3 ultrathin films with controllable inhomogeneities in film thickness (tSRO). By harnessing the step-flow growth of SrRuO3 films, we induced microscopically-ordered stripes with one-unit-cell differences in tSRO. The resultant spatial distribution of momentum-space Berry curvatures enables a two-channel AHE, which shows hump-like anomalies similar to the THE and can be continuously engineered via sub-unit-cell control of tSRO. In these inhomogeneous SRO films, we microscopically identified a two-step magnetic switching and stripe-like ferromagnetic domains. These features are fingerprints for distinguishing the two-channel AHE from the skyrmion-induced THE.
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Submitted 22 August, 2019;
originally announced August 2019.
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A Synthetic Skyrmion Platform with Robust Tunability
Authors:
Yong Li,
Qiyuan Feng,
Sihua Li,
Ke Huang,
Weiliang Gan,
Haibiao Zhou,
Xiangjun **,
Xiao Renshaw Wang,
Fusheng Ma,
Qingyou Lu,
Wen Siang Lew
Abstract:
Magnetic skyrmions are topologically non-trivial spin structure, and their existence in ferromagnetically coupled multilayers has been reported with disordered arrangement. In these multilayers, the heavy metal spacing layers provide an interfacial Dzyaloshinskii-Moriya interaction (DMI) for stabilizing skyrmions at the expense of interlayer exchanging coupling (IEC). To meet the functional requir…
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Magnetic skyrmions are topologically non-trivial spin structure, and their existence in ferromagnetically coupled multilayers has been reported with disordered arrangement. In these multilayers, the heavy metal spacing layers provide an interfacial Dzyaloshinskii-Moriya interaction (DMI) for stabilizing skyrmions at the expense of interlayer exchanging coupling (IEC). To meet the functional requirement of ordered/designable arrangement, in this work, we proposed and experimentally demonstrated a scenario of skyrmion nucleation using nanostructured synthetic antiferromagnetic (SAF) multilayers. Instead of relying on DMI, the antiferromagnetic IEC in the SAF multilayers fulfills the role of nucleation and stabilization of skyrmions. The IEC induced skyrmions were identified directly imaged with MFM and confirmed by magnetometry and magnetoresistance measurements as well as micromagnetic simulation. Furthermore, the robustness of the proposed skyrmion nucleation scenario was examined against temperature (from 4.5 to 300 K), device size (from 400 to 1200 nm), and different lattice designs. Hence, our results provide a synthetic skyrmion platform meeting the functional needs in magnonic and spintronic applications.
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Submitted 29 July, 2019;
originally announced July 2019.
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Moiré Engineering of Electronic Phenomena in Correlated Oxides
Authors:
Xinzhong Chen,
Xiaodong Fan,
Lin Li,
Nan Zhang,
Zhi**g Niu,
Tengfei Guo,
Suheng Xu,
Han Xu,
Dongli Wang,
Huayang Zhang,
A. S. McLeod,
Zhenlin Luo,
Qingyou Lu,
Andrew J. Millis,
D. N. Basov,
Mengkun Liu,
Changgan Zeng
Abstract:
Moiré engineering has recently emerged as a capable approach to control quantum phenomena in condensed matter systems. In van der Waals heterostructures, moiré patterns can be formed by lattice misorientation between adjacent atomic layers, creating long range electronic order. To date, moiré engineering has been executed solely in stacked van der Waals multilayers. Herein, we describe our discove…
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Moiré engineering has recently emerged as a capable approach to control quantum phenomena in condensed matter systems. In van der Waals heterostructures, moiré patterns can be formed by lattice misorientation between adjacent atomic layers, creating long range electronic order. To date, moiré engineering has been executed solely in stacked van der Waals multilayers. Herein, we describe our discovery of electronic moiré patterns in films of a prototypical magnetoresistive oxide La0.67Sr0.33MnO3 (LSMO) epitaxially grown on LaAlO3 (LAO) substrates. Using scanning probe nano-imaging, we observe microscopic moiré profiles attributed to the coexistence and interaction of two distinct incommensurate patterns of strain modulation within these films. The net effect is that both electronic conductivity and ferromagnetism of LSMO are modulated by periodic moiré textures extending over mesoscopic scales. Our work provides an entirely new route with potential to achieve spatially patterned electronic textures on demand in strained epitaxial materials.
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Submitted 26 July, 2019;
originally announced July 2019.
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Realisation of Symmetry Enforced Two-Dimensional Dirac Fermions in Nonsymmorphic $α$-Bismuthene
Authors:
Pawel J. Kowalczyk,
Simon A. Brown,
Tobias Maerkl,
Qiangsheng Lu,
Ching-Kai Chiu,
Ying Liu,
Shengyuan A. Yang,
Xiaoxiong Wang,
Ilona Zasada,
Francesca Genuzio,
T. Onur Menteş,
Andrea Locatelli,
Tai-Chang Chiang,
Guang Bian
Abstract:
Two-dimensional (2D) Dirac-like electron gases have attracted tremendous research interest ever since the discovery of free-standing graphene. The linear energy dispersion and non-trivial Berry phase play the pivotal role in the remarkable electronic, optical, mechanical and chemical properties of 2D Dirac materials. The known 2D Dirac materials are gapless only within certain approximations, for…
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Two-dimensional (2D) Dirac-like electron gases have attracted tremendous research interest ever since the discovery of free-standing graphene. The linear energy dispersion and non-trivial Berry phase play the pivotal role in the remarkable electronic, optical, mechanical and chemical properties of 2D Dirac materials. The known 2D Dirac materials are gapless only within certain approximations, for example, in the absence of SOC. Here we report a route to establishing robust Dirac cones in 2D materials with nonsymmorphic crystal lattice. The nonsymmorphic symmetry enforces Dirac-like band dispersions around certain high-symmetry momenta in the presence of SOC. Through $μ$-ARPES measurements we observe Dirac-like band dispersions in $α$-bismuthene. The nonsymmorphic lattice symmetry is confirmed by $μ$-LEED and STM. Our first-principles simulations and theoretical topological analysis demonstrate the correspondence between nonsymmorphic symmetry and Dirac states. This mechanism can be straightforwardly generalized to other nonsymmorphic materials. The results open the door for the search of symmetry enforced Dirac fermions in the vast uncharted world of nonsymmorphic 2D materials.
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Submitted 20 June, 2019;
originally announced June 2019.
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Direct Imaging Revealing Halved Ferromagnetism in Tensile-Strained LaCoO3 Thin Films
Authors:
Qiyuan Feng,
Dechao Meng,
Haibiao Zhou,
Genhao Liang,
Zhangzhang Cui,
Haoliang Huang,
Jianlin Wang,
**ghua Guo,
Chao Ma,
Xiaofang Zhai,
Qingyou Lu,
Yalin Lu
Abstract:
The enigma of the emergent ferromagnetic state in tensile-strained LaCoO3 thin films remains to be explored because of the lack of a well agreed explanation. The direct magnetic imaging technique using a low-temperature magnetic force microscope (MFM) is critical to reveal new aspects of the ferromagnetism by investigating the lateral magnetic phase distribution. Here we show the experimental demo…
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The enigma of the emergent ferromagnetic state in tensile-strained LaCoO3 thin films remains to be explored because of the lack of a well agreed explanation. The direct magnetic imaging technique using a low-temperature magnetic force microscope (MFM) is critical to reveal new aspects of the ferromagnetism by investigating the lateral magnetic phase distribution. Here we show the experimental demonstration of the rare halved occupation of the ferromagnetic state in tensile-strained LaCoO3 thin films on SrTiO3 substrates using the MFM. The films have uniformly strained lattice structure and minimal oxygen vacancies (less than 2%) beyond the measurement limit. It is found that percolated ferromagnetic regions with typical sizes between 100 nm and 200 nm occupy about 50% of the entire film, even down to the lowest achievable temperature of 4.5 K and up to the largest magnetic field of 13.4 T. Preformed ferromagnetic droplets were still observed when the temperature is 20 K above the Curie temperature indicating the existence of possible Griffiths phase. Our study demonstrated a sub-micron level phase separation in high quality LaCoO3 thin films, which has substantial implications in revealing the intrinsic nature of the emergent ferromagnetism.
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Submitted 10 June, 2019;
originally announced June 2019.
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Growth of metallic delafossite PdCoO2 by molecular beam epitaxy
Authors:
Matthew Brahlek,
Gaurab Rimal,
Jong Mok Ok,
Debangshu Mukherjee,
Alessandro R. Mazza,
Qiyang Lu,
Ho Nyung Lee,
T. Zac Ward,
Raymond R. Unocic,
Gyula Eres,
Seongshik Oh
Abstract:
The Pd, and Pt based ABO2 delafossites are a unique class of layered, triangular oxides with 2D electronic structure and a large conductivity that rivals the noble metals. Here, we report successful growth of the metallic delafossite PdCoO2 by molecular beam epitaxy (MBE). The key challenge is controlling the oxidation of Pd in the MBE environment where phase-segregation is driven by the reduction…
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The Pd, and Pt based ABO2 delafossites are a unique class of layered, triangular oxides with 2D electronic structure and a large conductivity that rivals the noble metals. Here, we report successful growth of the metallic delafossite PdCoO2 by molecular beam epitaxy (MBE). The key challenge is controlling the oxidation of Pd in the MBE environment where phase-segregation is driven by the reduction of PdCoO2 to cobalt oxide and metallic palladium. This is overcome by combining low temperature (300 °C) atomic layer-by-layer MBE growth in the presence of reactive atomic oxygen with a post-growth high-temperature anneal. Thickness dependence (5-265 nm) reveals that in the thin regime (<75 nm), the resistivity scales inversely with thickness, likely dominated by surface scattering; for thicker films the resistivity approaches the values reported for the best bulk-crystals at room temperature, but the low temperature resistivity is limited by structural twins. This work shows that the combination of MBE growth and a post-growth anneal provides a route to creating high quality films in this interesting family of layered, triangular oxides.
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Submitted 15 July, 2019; v1 submitted 29 May, 2019;
originally announced May 2019.
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Solution Processed Large-scale Multiferroic Complex Oxide Epitaxy with Magnetically Switched Polarization
Authors:
Cong Liu,
Feng An,
Paria S. M. Gharavi,
Qinwen Lu,
Chao Chen,
Liming Wang,
Xiaozhi Zhan,
Zedong Xu,
Yuan Zhang,
Ke Qu,
Junxiang Yao,
Yun Ou,
Xiangli Zhong,
Dongwen Zhang,
Nagarajan Valanoor,
Lang Chen,
Tao Zhu,
Deyang Chen,
Xiaofang Zhai,
Peng Gao,
Tingting Jia,
Shuhong Xie,
Gaokuo Zhong,
Jiangyu Li
Abstract:
Complex oxides with tunable structures have many fascinating properties, though high-quality complex oxide epitaxy with precisely controlled composition is still out of reach. Here we have successfully developed solution-based single crystalline epitaxy for multiferroic (1-x)BiTi(1-y)/2FeyMg(1-y)/2O3-(x)CaTiO3 (BTFM-CTO) solid solution in large area, confirming its ferroelectricity at atomic-scale…
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Complex oxides with tunable structures have many fascinating properties, though high-quality complex oxide epitaxy with precisely controlled composition is still out of reach. Here we have successfully developed solution-based single crystalline epitaxy for multiferroic (1-x)BiTi(1-y)/2FeyMg(1-y)/2O3-(x)CaTiO3 (BTFM-CTO) solid solution in large area, confirming its ferroelectricity at atomic-scale with a spontaneous polarization of 79~89uC/cm2. Careful compositional tuning leads to a bulk magnetization of ~0.07uB/Fe at room temperature, enabling magnetically induced polarization switching exhibiting a large magnetoelectric coefficient of 2.7-3.0X10-7s/m. This work demonstrates the great potential of solution processing in large-scale complex oxide epitaxy and establishes novel room-temperature magnetoelectric coupling in epitaxial BTFM-CTO film, making it possible to explore a much wider space of composition, phase, and structure that can be easily scaled up for industrial applications.
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Submitted 6 April, 2019;
originally announced April 2019.
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Experimental measurement of the quantum geometric tensor using coupled qubits in diamond
Authors:
Min Yu,
Pengcheng Yang,
Musang Gong,
Qingyun Cao,
Qiuyu Lu,
Haibin Liu,
Martin B. Plenio,
Fedor Jelezko,
Tomoki Ozawa,
Nathan Goldman,
Shaoliang Zhang,
Jianming Cai
Abstract:
Geometry and topology are fundamental concepts, which underlie a wide range of fascinating physical phenomena such as topological states of matter and topological defects. In quantum mechanics, the geometry of quantum states is fully captured by the quantum geometric tensor. Using a qubit formed by an NV center in diamond, we perform the first experimental measurement of the complete quantum geome…
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Geometry and topology are fundamental concepts, which underlie a wide range of fascinating physical phenomena such as topological states of matter and topological defects. In quantum mechanics, the geometry of quantum states is fully captured by the quantum geometric tensor. Using a qubit formed by an NV center in diamond, we perform the first experimental measurement of the complete quantum geometric tensor. Our approach builds on a strong connection between coherent Rabi oscillations upon parametric modulations and the quantum geometry of the underlying states. We then apply our method to a system of two interacting qubits, by exploiting the coupling between the NV center spin and a neighboring $^{13}$C nuclear spin. Our results establish coherent dynamical responses as a versatile probe for quantum geometry, and they pave the way for the detection of novel topological phenomena in solid state.
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Submitted 28 November, 2019; v1 submitted 30 November, 2018;
originally announced November 2018.
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Optical properties of metamorphic type-I InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells grown on GaAs for the mid-infrared spectral range
Authors:
Eva Repiso,
Christopher A. Broderick,
Maria de la Mata,
Reza Arkani,
Qi Lu,
Andrew R. J. Marshall,
Sergio I. Molina,
Eoin P. O'Reilly,
Peter J. Carrington,
Anthony Krier
Abstract:
We analyse the optical properties of InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Al$_{y}$In$_{1-y}$As metamorphic buffer layers (MBLs) using GaAs substrates. The use of Al$_{y}$In$_{1-y}$As MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths $> 3$ $μ$m. Photoluminescence (PL) measurements for QWs…
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We analyse the optical properties of InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Al$_{y}$In$_{1-y}$As metamorphic buffer layers (MBLs) using GaAs substrates. The use of Al$_{y}$In$_{1-y}$As MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths $> 3$ $μ$m. Photoluminescence (PL) measurements for QWs having Sb compositions up to $x = 10$\% demonstrate strong room temperature emission up to 3.4 $μ$m, as well as enhancement of the PL intensity with increasing wavelength. To quantify the trends in the measured PL we calculate the QW spontaneous emission, using a theoretical model based on an 8-band $\vec{k} \cdot \vec{p}$ Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure. Our results highlight the potential of type-I InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As metamorphic QWs to address several limitations associated with existing heterostructures operating in the mid-infrared, establishing these novel heterostructures as a suitable platform for the development of mid-infrared light-emitting diodes.
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Submitted 6 November, 2018;
originally announced November 2018.
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Atomically resolved probe-type scanning tunneling microscope for use in harsh vibrational cryogen-free superconducting magnet
Authors:
Wenjie Meng,
Jihao Wang,
Yubin Hou,
Mengqiao Sui,
Junting Wang,
Gang Wu,
Junyun Li,
Qingyou Lu
Abstract:
We present a probe-type scanning tunneling microscope (STM) with atomic resolution that is designed to be directly inserted and work in a harsh vibrational cryogen-free superconducting magnet system. When a commercial variable temperature insert (VTI) is installed in the magnet and the STM is in turn housed in the VTI, a lowest temperature of 1.6 K can be achieved, where the STM still operates wel…
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We present a probe-type scanning tunneling microscope (STM) with atomic resolution that is designed to be directly inserted and work in a harsh vibrational cryogen-free superconducting magnet system. When a commercial variable temperature insert (VTI) is installed in the magnet and the STM is in turn housed in the VTI, a lowest temperature of 1.6 K can be achieved, where the STM still operates well. We have tested it in an 8 T superconducting magnet cooled with the pulse-tube cryocooler (PTC) and obtained atomically revolved graphite and NiSe2 images as well as the scanning tunneling spectrum (STS, i.e. dI/dV spectrum) data of the latter near its critical temperature, which show the formation process of the superconducting gap as a function of temperature. The drifting rates of the STM at 1.6 K in X-Y plane and Z direction are 1.15 and 1.71 pm/min respectively. Noise analysis for the tunneling current shows that the amplitudes of the dominant peaks (6.84 and 10.25Hz) are low. This is important as a cryogen-free magnet system has long been considered too harsh for any atomic resolution measurement.
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Submitted 31 May, 2018; v1 submitted 25 May, 2018;
originally announced May 2018.
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Multiple structure and symmetry types in narrow temperature and magnetic field ranges in two-dimensional Cr2Ge2Te6 crystal
Authors:
Tengfei Guo,
Zongwei Ma,
Gaoting Lin,
Xuan Luo,
Yubin Hou,
Yu** Sun,
Zhigao Sheng,
Qingyou Lu
Abstract:
Multiple structure and symmetry types and their transformations are discovered in quasi-two-dimensional (quasi-2D) Cr2Ge2Te6 crystal in surprisingly very narrow temperature range of 2 K and magnetic field range of 0.07 T using a homebuilt magnetic force microscope (MFM). A series of basic domain patterns are extracted from the MFM images. Some of them seem unique to 2-D materials as they are not o…
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Multiple structure and symmetry types and their transformations are discovered in quasi-two-dimensional (quasi-2D) Cr2Ge2Te6 crystal in surprisingly very narrow temperature range of 2 K and magnetic field range of 0.07 T using a homebuilt magnetic force microscope (MFM). A series of basic domain patterns are extracted from the MFM images. Some of them seem unique to 2-D materials as they are not observed in 3-D materials, such as self-fitting disks, and fine ladder structure within Y-connected walls. Based on these findings, a phase map is drawn for the magnetic phase structures. The symmetry of the patterns are discussed. The results are not only important in develo** new theories but also highly desirable in applications.
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Submitted 21 March, 2018; v1 submitted 16 March, 2018;
originally announced March 2018.
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Type-I and type-II Nodal Lines Coexistence in the Antiferromagnetic monolayer CrAs$_{2}$
Authors:
Busheng Wang,
Heng Gao,
Qing Lu,
WenHui Xie,
Yanfeng Ge,
Yong-Hong Zhao,
Kaicheng Zhang,
Yong Liu
Abstract:
Topological nodal line semimetals, hosting one-dimensional Fermi lines with symmetry protection, has become a hot topic in topological quantum matter. Due to the breaking of time reversal symmetry in magnetic system, nodal lines require protection by additional symmetries. Here, we report the discovery of antiferromagnetic type-I and type-II nodal lines coexist in the monolayer CrAs$_{2}$ based on…
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Topological nodal line semimetals, hosting one-dimensional Fermi lines with symmetry protection, has become a hot topic in topological quantum matter. Due to the breaking of time reversal symmetry in magnetic system, nodal lines require protection by additional symmetries. Here, we report the discovery of antiferromagnetic type-I and type-II nodal lines coexist in the monolayer CrAs$_{2}$ based on a systematic first-principles calculation. Remarkably, the type-I nodal line in CrAs$_{2}$ form a concentric loop centered around the $Γ$ point is filling-enforced by nonsymmorphic analogue symmetry and robust against spin-orbital coupling. The type-II nodal lines, a kind of open nodal lines appear around the Fermi level, are protected by the mirror symmetry in the absence of spin-orbital coupling. The antiferromagnetic monolayer CrAs$_{2}$ proposed here may provide a platform for the correlation between magnetism and exotic topological phases.
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Submitted 28 April, 2018; v1 submitted 12 March, 2018;
originally announced March 2018.
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Multiple Topological Electronic Phases in Superconductor MoC
Authors:
Angus Huang,
Adam D. Smith,
Madison Schwinn,
Qiangsheng Lu,
Tay-Rong Chang,
Weiwei Xie,
Horng-Tay Jeng,
Guang Bian
Abstract:
The search for a superconductor with non-s-wave pairing is important not only for understanding unconventional mechanisms of superconductivity but also for finding new types of quasiparticles such as Majorana bound states. Materials with both topological band structure and superconductivity are promising candidates as $p+ip$ superconducting states can be generated through pairing the spin-polarize…
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The search for a superconductor with non-s-wave pairing is important not only for understanding unconventional mechanisms of superconductivity but also for finding new types of quasiparticles such as Majorana bound states. Materials with both topological band structure and superconductivity are promising candidates as $p+ip$ superconducting states can be generated through pairing the spin-polarized topological surface states. In this work, the electronic and phonon properties of the superconductor molybdenum carbide (MoC) are studied with first-principles methods. Our calculations show that nontrivial band topology and superconductivity coexist in both structural phases of MoC, namely, the cubic $α$ and hexagonal $γ$ phases. The $α$ phase is a strong topological insulator and the $γ$ phase is a topological nodal line semimetal with drumhead surface states. In addition, hole do** can stabilize the crystal structure of the $α$ phase and elevate the transition temperature in the $γ$ phase. Therefore, MoC in different structural forms can be a practical material platform for studying topological superconductivity and elusive Majorana fermions.
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Submitted 24 September, 2017;
originally announced September 2017.
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Robust Large Gap Quantum Spin Hall Insulators in Methyl-functionalized III-Bi Buckled Honeycombs
Authors:
Qing Lu,
Busheng Wang,
Xiang-Rong Chen,
Wu-Ming Liu
Abstract:
A large bulk band gap is critical for the applications of quantum spin hall (QSH) insulators in spintronics at room temperature. Based on first-principles calculations, we predict that the methyl-functionalized III-Bi monolayers, namely III-Bi-(CH3)2 (III=Ga, In, Tl) thin films, own QSH states with band gap as large as 0.260, 0.304 and 0.843 eV, respectively, making them suitable for room-temperat…
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A large bulk band gap is critical for the applications of quantum spin hall (QSH) insulators in spintronics at room temperature. Based on first-principles calculations, we predict that the methyl-functionalized III-Bi monolayers, namely III-Bi-(CH3)2 (III=Ga, In, Tl) thin films, own QSH states with band gap as large as 0.260, 0.304 and 0.843 eV, respectively, making them suitable for room-temperature applications. The topological characteristics are confirmed by s-px,y band inversion, topological invariant Z2, and the topologically protected edge states. Noticeably, for GaBi/InBi-(CH3)2 films, the s-px,y band inversion occurred in the progress of spin-orbital coupling (SOC), while for TlBi(CH3)2 film, the s-px,y band inversion happened in the progress of chemical bonding. Significantly, the QSH states in III-Bi-(CH3)2 films are robust against the mechanical strains and various methyl coverages, making these films particularly flexible to substrate choice for device applications. Besides, the h-BN substrate is an ideal substrate for III-Bi-(CH3)2 films to realize large gap nontrivial topological states.. These findings demonstrate that the methyl-functionalized III-Bi films may be good QSH effect platforms for topological electronic devices design and fabrication in spintronics.
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Submitted 24 January, 2018; v1 submitted 22 July, 2017;
originally announced July 2017.
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The origin of the turn-on phenomenon in Td-MoTe2
Authors:
Q. L. Pei,
W. J. Meng,
X. Luo,
H. Y. Lv,
F. C. Chen,
W. J. Lu,
Y. Y. Han,
P. Tong,
W. H. Song,
Y. B. Hou,
Q. Y. Lu,
Y. P. Sun
Abstract:
We did the resistivity and scanning tunneling microscope/spectroscopy (STM/STS) experiments at different temperatures and magnetic fields to investigate the origin of the turn-on (t-o) phenomenon of Td-MoTe2. There are two interesting observations. Firstly, magnetoresistance (MR) follows the Kohler rule scaling: MR - (H/p0)m with m - 1.92 and the t-o temperature T under different magnetic fields c…
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We did the resistivity and scanning tunneling microscope/spectroscopy (STM/STS) experiments at different temperatures and magnetic fields to investigate the origin of the turn-on (t-o) phenomenon of Td-MoTe2. There are two interesting observations. Firstly, magnetoresistance (MR) follows the Kohler rule scaling: MR - (H/p0)m with m - 1.92 and the t-o temperature T under different magnetic fields can also be scaled by T - (H-Hc)u with u = 1/2. Secondly, a combination of compensated electron-hole pockets and a possible electronic structure phase transition induced by the temperature have been validated in Td-MoTe2 by the STM/STS experiments. Compared with the STS of Td-MoTe2 single crystal under H = 0, the STS hardly changes even when the applied field is up to 7 T. The origins of the t-o phenomenon in Td-MoTe2 are discussed. Meanwhile, we analyzed the universality and applicability of the t-o phenomenon in the extreme MR materials with almost balanced hole and electron densities as well as with other systems where the density of hole or electron is in dominant position.
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Submitted 9 July, 2017;
originally announced July 2017.