Showing 1–48 of 48 results for author: Lu, N

All-electrical valley filtering in graphene systems (II): Numerical study of electron transport in valley valves

Authors: Jia-Huei Jiang, Ning-Yuan Lue, Feng-Wu Chen, Yu-Shu G. Wu

Abstract: This work performs a numerical study of electron transport through the fundamental logic gate in valleytronics - a valley valve consisting of two or increasing number of valley filters. Various typical effects on the transport are investigated, such as those due to interface scattering, long- and short- range impurity scattering, edge roughness, strain, inter-filter spacing, or increasing number o… ▽ More This work performs a numerical study of electron transport through the fundamental logic gate in valleytronics - a valley valve consisting of two or increasing number of valley filters. Various typical effects on the transport are investigated, such as those due to interface scattering, long- and short- range impurity scattering, edge roughness, strain, inter-filter spacing, or increasing number of valley filters. For illustration, we consider the class of specific valves built from graphene quantum wire valley filters in single layer or bilayer graphene, with the filters subject to separate control of in-plane, transverse electric fields. The nearest-neighbor tight-binding model of graphene is used to formulate the corresponding transport problem, and the algorithm of recursive Green's function method is applied to solve for the corresponding transmission coefficient. In the case of two-filter valves, the result explicitly demonstrates the existence of a pronounced on-off contrast in electron transmission between the two configurations of valves, namely, one with identical and the other with opposite valley polarities in the two constituent filters. The contrast is shown to be enhanced when increasing the number of filters in valves. Signatures of Fano-Fabry-Perot type resonances in association with interface scattering and inter-filter spacing are illustrated. Electron backscattering due to impurities is found to be sizably suppressed, with the valve performance showing considerable robustness against edge roughness scattering. On the other hand, the presence of a uniaxial strain modifies the electron transmission and results in an interesting quasi-periodic modulation of transmission as we vary the strain strength. △ Less

Submitted 5 September, 2022; originally announced September 2022.

Comments: 23 pages, 24 figures

All-electrical valley filtering in graphene systems (I): A path to integrated electro-valleytronics

Authors: Feng-Wu Chen, Nin-Yuan Lue, Mei-Yin Chou, Yu-Shu G. Wu

Abstract: Probing and controlling the valley degree of freedom in graphene systems by transport measurements has been a major challenge to fully exploit the unique properties of this two-dimensional material. In this theoretical work, we show that this goal can be achieved by a quantum-wire geometry made of gapped graphene that acts as a valley filter with the following favorable features: i) all electrical… ▽ More Probing and controlling the valley degree of freedom in graphene systems by transport measurements has been a major challenge to fully exploit the unique properties of this two-dimensional material. In this theoretical work, we show that this goal can be achieved by a quantum-wire geometry made of gapped graphene that acts as a valley filter with the following favorable features: i) all electrical gate control, ii) electrically switchable valley polarity, iii) robustness against configuration fluctuation, and iv) potential for room temperature operation. This valley filtering is accomplished by a combination of gap opening in either bilayer graphene with a vertical electrical field or single layer graphene on h-BN, valley splitting with a horizontal electric field, and intervalley mixing by defect scattering. In addition to functioning as a building block for valleytronics, the proposed configuration makes it possible to convert signals between electrical and valleytronic forms, thus allowing for the integration of electronic and valleytronic components for the realization of electro-valleytronics. △ Less

Submitted 5 September, 2022; originally announced September 2022.

Ultra-High Lithium Storage Capacity of Al2C Monolayer under Restricted Multilayered Growth Mechanism

Authors: Ning Lu, Kai Wang, Jiaxin Jiang, Hongyan Guo, Gui Zhong Zuo, Zhiwen Zhuo, Xiaojun Wu, Xiao Cheng Zeng

Abstract: Designing anode materials with high lithium specific capacity is crucial to the development of high energy-density lithium ion batteries. Herein, a distinctive lithium growth mechanism, namely, the restricted multilayered growth for lithium, and a strategy for lithium storage are proposed to achieve the balance between the ultra-high specific capacity and the need to avert uncontrolled dendritic g… ▽ More Designing anode materials with high lithium specific capacity is crucial to the development of high energy-density lithium ion batteries. Herein, a distinctive lithium growth mechanism, namely, the restricted multilayered growth for lithium, and a strategy for lithium storage are proposed to achieve the balance between the ultra-high specific capacity and the need to avert uncontrolled dendritic growth of lithium. In particular, based on first-principles computation, we show that the Al2C monolayer with planar tetracoordinate carbon structure can be an ideal platform for realizing the restricted multilayered growth mechanism as a 2D anode material. Furthermore, the Al2C monolayer exhibits ultra-high specific capacity of lithium of 4059 mAh/g, yet with a low dif-fusion barrier of 0.039-0.17 eV as well as low open circuit voltage in the range of 0.002-0.34 V. These novel properties endow the Al2C monolayer a promising anode material for future lithium ion batteries. Our study offers a new way to design promising 2D anode materials with high specific capacity, fast lithium-ion diffusion, and safe lithium storage mechanism. △ Less

Submitted 13 March, 2022; originally announced March 2022.

Journal ref: ACS Appl. Mater. Interfaces 2022, 14, 35663-35672

Anisotropic Electrene T'-Ca2P with Electron Gas Magnetic Coupling as Anode Material for Na/K Ion Batteries

Authors: Jiaxin Jiang, Kai Wang, Hongyan Guo, Guizhong Zuo, Zhiwen Zhuo, Ning Lu

Abstract: There is an urgently need for the high-performance rechargeable electrical storage devices as supplement or substitutions of lithium ion batteries due to the shortage of lithium in nature. Herein we propose a stable 2D electrene T'-Ca2P as anode material for Na/K ion batteries by first-principle calculations. Our calculated results show that T'-Ca2P monolayer is an antiferromagnetic semiconducting… ▽ More There is an urgently need for the high-performance rechargeable electrical storage devices as supplement or substitutions of lithium ion batteries due to the shortage of lithium in nature. Herein we propose a stable 2D electrene T'-Ca2P as anode material for Na/K ion batteries by first-principle calculations. Our calculated results show that T'-Ca2P monolayer is an antiferromagnetic semiconducting electrene with spin-polarized electron gas. It exhibits suitable adsorption for both Na and K atoms, and its anisotropic migration energy barriers are 0.050/0.101 eV and 0.037/0.091 eV in b/a direction, respectively. The theoretical capacities for Na and K are both 482 mAh/g, while the average working voltage platforms are 0.171-0.226 V and 0.013-0.267 V, respectively. All the results reveal that the T'-Ca2P monolayer has promised application prospects as anode materials for Na/K ion batteries. △ Less

Submitted 13 March, 2022; originally announced March 2022.

Journal ref: Phys. Chem. Chem. Phys., 2022,24, 10567-10574

Two-dimensional crystals on adhesive substrates subjected to uniform transverse pressure

Authors: Zhaohe Dai, Yifan Rao, Nanshu Lu

Abstract: In this work we consider bubbles that can form spontaneously when a two-dimensional (2D) crystal is transferred to a substrate with gases or liquids trapped at the crystal-substrate interface. The underlying mechanics may be described by a thin sheet on an adhesive substrate with the trapped fluid applying uniform transverse pressure. What makes this apparently simple problem complex is the rich i… ▽ More In this work we consider bubbles that can form spontaneously when a two-dimensional (2D) crystal is transferred to a substrate with gases or liquids trapped at the crystal-substrate interface. The underlying mechanics may be described by a thin sheet on an adhesive substrate with the trapped fluid applying uniform transverse pressure. What makes this apparently simple problem complex is the rich interplay among geometry, interface, elasticity and instability. Particularly, extensive small-scale experiments have shown that the 2D crystal surrounding a bubble can adhere to and, meanwhile, slide on the substrate. The radially inward sliding causes hoop compression to the 2D crystal which may exploit wrinkling instabilities to relax or partially relax the compression. We present a theoretical model to understand the complex behaviors of even a linearly elastic 2D crystal due to the combination of nonlinear geometry, adhesion, sliding, and wrinkling in bubble systems. We show that this understanding not only successfully predicts the geometry of a spontaneous bubble but also reveals the strain-coupled physics of 2D crystals, e.g., the pseudomagnetic fields in graphene bubbles. △ Less

Submitted 22 May, 2022; v1 submitted 14 February, 2022; originally announced February 2022.

Forced Imbibition in Stratified Porous Media: Fluid Dynamics and Breakthrough Saturation

Authors: Nancy B. Lu, Daniel B. Amchin, Sujit S. Datta

Abstract: Imbibition, the displacement of a nonwetting fluid by a wetting fluid, plays a central role in diverse energy, environmental, and industrial processes. While this process is typically studied in homogeneous porous media with uniform permeabilities, in many cases, the media have multiple parallel strata of different permeabilities. How such stratification impacts the fluid dynamics of imbibition, a… ▽ More Imbibition, the displacement of a nonwetting fluid by a wetting fluid, plays a central role in diverse energy, environmental, and industrial processes. While this process is typically studied in homogeneous porous media with uniform permeabilities, in many cases, the media have multiple parallel strata of different permeabilities. How such stratification impacts the fluid dynamics of imbibition, as well as the fluid saturation after the wetting fluid breaks through to the end of a given medium, is poorly understood. We address this gap in knowledge by develo** an analytical model of imbibition in a porous medium with two parallel strata, combined with a pore network model that explicitly describes fluid crossflow between the strata. By numerically solving these models, we examine the fluid dynamics and fluid saturation left after breakthrough. We find that the breakthrough saturation of nonwetting fluid is minimized when the imposed capillary number Ca is tuned to a value Ca$^*$ that depends on both the structure of the medium and the viscosity ratio between the two fluids. Our results thus provide quantitative guidelines for predicting and controlling flow in stratified porous media, with implications for water remediation, oil/gas recovery, and applications requiring moisture management in diverse materials. △ Less

Submitted 4 August, 2021; originally announced August 2021.

Journal ref: Physical Review Fluids, 6, 114007 (2021)

Manipulate the Electronic State of Mott Iridate Superlattice through Protonation Induced Electron-Filling

Authors: Meng Wang, Lin Hao, Fang Yin, Xin Yang, Shengchun Shen, Nianlong Zou, Hui Cao, Junyi Yang, Nianpeng Lu, Yongshun Wu, Jianbing Zhang, Hua Zhou, Jia Li, Jian Liu, Pu Yu

Abstract: Spin-orbit-coupled Mott iridates show great similarity with parent compounds of superconducting cuprates, attracting extensive research interests especially for their electron-doped states. However, previous experiments are largely limited within a small do** range due to the absence of effective dopants, and therefore the electron-doped phase diagram remains elusive. Here we utilize an ionic-li… ▽ More Spin-orbit-coupled Mott iridates show great similarity with parent compounds of superconducting cuprates, attracting extensive research interests especially for their electron-doped states. However, previous experiments are largely limited within a small do** range due to the absence of effective dopants, and therefore the electron-doped phase diagram remains elusive. Here we utilize an ionic-liquid-gating induced protonation method to achieve electron-do** into a 5d Mott-insulator built with SrIrO3/SrTiO3 superlattice, and achieve a systematic map** of its electron-doped phase diagram with the evolution of the iridium valence state from 4+ to 3+, equivalent to do** of one electron per iridium ion. Along increasing do** level, the parent Mott-insulator is first turned into a localized metallic state with gradually suppressed magnetic ordering, and then further evolved into a nonmagnetic band insulating state. This work forms an important step forward for the study of electron-doped Mott iridate systems, and the strategy of manipulating the band filling in an artificially designed superlattice structure can be readily extended into other systems with more exotic states to explore. △ Less

Submitted 25 March, 2021; originally announced March 2021.

Comments: accepted

Journal ref: advanced functional materials, 2021

Under pressure: Hydrogel swelling in a granular medium

Authors: Jean-François Louf, Nancy B. Lu, Margaret G. O'Connell, H. Jeremy Cho, Sujit S. Datta

Abstract: Hydrogels hold promise in agriculture as reservoirs of water in dry soil, potentially alleviating the burden of irrigation. However, confinement in soil can markedly reduce the ability of hydrogels to absorb water and swell, limiting their widespread adoption. Unfortunately, the underlying reason remains unknown. By directly visualizing the swelling of hydrogels confined in three-dimensional granu… ▽ More Hydrogels hold promise in agriculture as reservoirs of water in dry soil, potentially alleviating the burden of irrigation. However, confinement in soil can markedly reduce the ability of hydrogels to absorb water and swell, limiting their widespread adoption. Unfortunately, the underlying reason remains unknown. By directly visualizing the swelling of hydrogels confined in three-dimensional granular media, we demonstrate that the extent of hydrogel swelling is determined by the competition between the force exerted by the hydrogel due to osmotic swelling and the confining force transmitted by the surrounding grains. Furthermore, the medium can itself be restructured by hydrogel swelling, as set by the balance between the osmotic swelling force, the confining force, and intergrain friction. Together, our results provide quantitative principles to predict how hydrogels behave in confinement, potentially improving their use in agriculture as well as informing other applications such as oil recovery, construction, mechanobiology, and filtration. △ Less

Submitted 21 March, 2021; originally announced March 2021.

Comments: This article is published in Science Advances and supplementary material is available at https://advances.sciencemag.org/content/7/7/eabd2711

Journal ref: Science Advances, Vol. 7, no. 7, eabd2711 (2021)

Forced Imbibition in Stratified Porous Media

Authors: Nancy B. Lu, Amir A. Pahlavan, Christopher A. Browne, Daniel B. Amchin, Howard A. Stone, Sujit S. Datta

Abstract: Imbibition plays a central role in diverse energy, environmental, and industrial processes. In many cases, the medium has multiple parallel strata of different permeabilities; however, how this stratification impacts imbibition is poorly understood. We address this gap in knowledge by directly visualizing forced imbibition in three-dimensional (3D) porous media with two parallel strata. We find th… ▽ More Imbibition plays a central role in diverse energy, environmental, and industrial processes. In many cases, the medium has multiple parallel strata of different permeabilities; however, how this stratification impacts imbibition is poorly understood. We address this gap in knowledge by directly visualizing forced imbibition in three-dimensional (3D) porous media with two parallel strata. We find that imbibition is spatially heterogeneous: for small capillary number Ca, the wetting fluid preferentially invades the fine stratum, while for Ca above a threshold value, the fluid instead preferentially invades the coarse stratum. This threshold value depends on the medium geometry, the fluid properties, and the presence of residual wetting films in the pore space. These findings are well described by a linear stability analysis that incorporates crossflow between the strata. Thus, our work provides quantitative guidelines for predicting and controlling flow in stratified porous media. △ Less

Submitted 5 October, 2020; originally announced October 2020.

Comments: In press

Journal ref: Phys. Rev. Applied 14, 054009 (2020)

Robust ferromagnetism in highly strained SrCoO3 thin films

Authors: Yujia Wang, Qing He, Wenmei Ming, Mao-Hua Du, Nianpeng Lu, Clodomiro Cafolla, Jun Fujioka, Qinghua Zhang, Ding Zhang, Shengchun Shen, Yingjie Lyu, Alpha T. N'Diaye, Elke Arenholz, Lin Gu, Cewen Nan, Yoshinori Tokura, Satoshi Okamoto, Pu Yu

Abstract: Epitaxial strain provides important pathways to control the magnetic and electronic states in transition metal oxides. However, the large strain is usually accompanied by a strong reduction of the oxygen vacancy formation energy, which hinders the direct manipulation of their intrinsic properties. Here using a post-deposition ozone annealing method, we obtained a series of oxygen stoichiometric Sr… ▽ More Epitaxial strain provides important pathways to control the magnetic and electronic states in transition metal oxides. However, the large strain is usually accompanied by a strong reduction of the oxygen vacancy formation energy, which hinders the direct manipulation of their intrinsic properties. Here using a post-deposition ozone annealing method, we obtained a series of oxygen stoichiometric SrCoO3 thin films with the tensile strain up to 3.0%. We observed a robust ferromagnetic ground state in all strained thin films, while interestingly the tensile strain triggers a distinct metal to insulator transition along with the increase of the tensile strain. The persistent ferromagnetic state across the electrical transition therefore suggests that the magnetic state is directly correlated with the localized electrons, rather than the itinerant ones, which then calls for further investigation of the intrinsic mechanism of this magnetic compound beyond the double-exchange mechanism. △ Less

Submitted 4 April, 2020; v1 submitted 29 March, 2020; originally announced March 2020.

The use of strain and grain boundaries to tailor phonon transport properties: A first principles study of 2H-phase $CuAlO_{2}$ (Part II)

Authors: Evan Witkoske, Zhen Tong, Yining Feng, Xiulin Ruan, Mark Lundstrom, Na Lu

Abstract: Transparent oxide materials, such as $CuAlO_{2}$, a p-type transparent conducting oxide (TCO), have recently been studied for high temperature thermoelectric power generators and coolers for waste heat. TCO materials are generally low cost and non-toxic. The potential to engineer them through strain and nano-structuring are two promising avenues toward continuously tuning the electronic and therma… ▽ More Transparent oxide materials, such as $CuAlO_{2}$, a p-type transparent conducting oxide (TCO), have recently been studied for high temperature thermoelectric power generators and coolers for waste heat. TCO materials are generally low cost and non-toxic. The potential to engineer them through strain and nano-structuring are two promising avenues toward continuously tuning the electronic and thermal properties to achieve high zT values and low cost/kW-hr devices. In this work, the strain-dependent lattice thermal conductivity of 2H $CuAlO_{2}$ is computed by solving the phonon Boltzmann transport equation with interatomic force constants extracted from first-principles calculations. While the average bulk thermal conductivity is around 32 W/(K-m) at room temperature, it drops to between 5-15 W/(K-m) for typical experimental grain sizes from 3nm to 30nm at room temperature. We find that strain can offer both an increase as well as a decrease in the thermal conductivity as expected, however the overall inclusion of small grain sizes dictates the potential for low thermal conductivity in this material. △ Less

Submitted 13 December, 2019; originally announced December 2019.

Controlling capillary fingering using pore size gradients in disordered media

Authors: Nancy B. Lu, Christopher A. Browne, Daniel B. Amchin, Janine K. Nunes, Sujit S. Datta

Abstract: Capillary fingering is a displacement process that can occur when a non-wetting fluid displaces a wetting fluid from a homogeneous disordered porous medium. Here, we investigate how this process is influenced by a pore size gradient. Using microfluidic experiments and computational pore-network models, we show that the non-wetting fluid displacement behavior depends sensitively on the direction an… ▽ More Capillary fingering is a displacement process that can occur when a non-wetting fluid displaces a wetting fluid from a homogeneous disordered porous medium. Here, we investigate how this process is influenced by a pore size gradient. Using microfluidic experiments and computational pore-network models, we show that the non-wetting fluid displacement behavior depends sensitively on the direction and the magnitude of the gradient. The fluid displacement depends on the competition between a pore size gradient and pore-scale disorder; indeed, a sufficiently large gradient can completely suppress capillary fingering. By analyzing capillary forces at the pore scale, we identify a non-dimensional parameter that describes the physics underlying these diverse flow behaviors. Our results thus expand the understanding of flow in complex porous media, and suggest a new way to control flow behavior via the introduction of pore size gradients. △ Less

Submitted 21 July, 2019; originally announced July 2019.

Comments: In press, Physical Review Fluids (2019)

Journal ref: Physical Review Fluids 4, 084303 (2019)

Crack formation and self-closing in shrinkable, granular packings

Authors: H. Jeremy Cho, Nancy B. Lu, Michael P. Howard, Rebekah A. Adams, Sujit S. Datta

Abstract: Many clays, soils, biological tissues, foods, and coatings are shrinkable, granular materials: they are composed of packed, hydrated grains that shrink when dried. In many cases, these packings crack during drying, critically hindering applications. However, while cracking has been widely studied for bulk gels and packings of non-shrinkable grains, little is known about how packings of shrinkable… ▽ More Many clays, soils, biological tissues, foods, and coatings are shrinkable, granular materials: they are composed of packed, hydrated grains that shrink when dried. In many cases, these packings crack during drying, critically hindering applications. However, while cracking has been widely studied for bulk gels and packings of non-shrinkable grains, little is known about how packings of shrinkable grains crack. Here, we elucidate how grain shrinkage alters cracking during drying. Using experiments with model shrinkable hydrogel beads, we show that differential shrinkage can dramatically alter crack evolution during drying---in some cases, even causing cracks to spontaneously "self-close". In other cases, packings shrink without cracking or crack irreversibly. We developed both granular and continuum models to quantify the interplay between grain shrinkage, poromechanics, packing size, drying rate, capillarity, and substrate friction on cracking. Guided by the theory, we also found that cracking can be completely altered by varying the spatial profile of drying. Our work elucidates the rich physics underlying cracking in shrinkable, granular packings, and yields new strategies for controlling crack evolution. △ Less

Submitted 15 May, 2019; originally announced May 2019.

Comments: In press

Journal ref: Soft Matter 15, 4689-4702 (2019)

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Authors: Y. Feng, V. Saravade, T. F. Chung, Y. Dong, H. Zhou, B. Kucukgok, I. T. Ferguson, N. Lu

Abstract: This work presents a systematic study of stress and strain of AlxGa1-xN/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resolution X-ray diffraction and reciprocal space map**. The c-plane of the AlxGa1-xN epitaxial layers exhibits compressive strain, while the a-plane exhibits tensile strain.… ▽ More This work presents a systematic study of stress and strain of AlxGa1-xN/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resolution X-ray diffraction and reciprocal space map**. The c-plane of the AlxGa1-xN epitaxial layers exhibits compressive strain, while the a-plane exhibits tensile strain. The biaxial stress and strain are found to increase with increasing Al composition, although the lattice mismatch between the AlxGa1-xN and the buffer layer AlN gets smaller. A reduction in the lateral coherence lengths and an increase in the edge and screw dislocations are seen as the AlxGa1-xN composition is varied from GaN to AlN, exhibiting a clear dependence of the crystal properties of AlxGa1-xN on the Al content. The bandgap of the epitaxial layers is slightly lower than predicted value due to a larger tensile strain effect on the a-axis compared to the compressive strain on the c-axis. Raman characteristics of the AlxGa1-xN samples exhibit a shift in the phonon peaks with the Al composition. The effect of strain is also discussed on the optical phonon energies of the epitaxial layers. The techniques discussed here can be used to study other similar materials. △ Less

Submitted 10 May, 2019; originally announced May 2019.

Comments: 14 pages, 5 figures, 2 tables

Journal ref: Scientific Reports (2019) 9:10172

Homogenous $In_{x}Ga_{1-x}N$ alloys on ZnO substrates: A new approach for high performance thermoelectric materials

Authors: Yining Feng, Evan Witkoske, Bahadir Kucukgok, Yee Rui Koh, Ali Shakouri, Ian T. Ferguson, Na Lu

Abstract: High performance thermoelectric materials for wide-range temperature applications still remains a challenge. In this study, we have produced high-quality homogeneous $In_{0.32}Ga_{0.68}N$ on ZnO substrates, with no phase separation at high Indium content, using metal organic chemical vapor deposition for thermoelectric applications. A record high room temperature figure of merit zT is obtained of… ▽ More High performance thermoelectric materials for wide-range temperature applications still remains a challenge. In this study, we have produced high-quality homogeneous $In_{0.32}Ga_{0.68}N$ on ZnO substrates, with no phase separation at high Indium content, using metal organic chemical vapor deposition for thermoelectric applications. A record high room temperature figure of merit zT is obtained of 0.86, which is five times larger than that of SiGe, the current state of the art high temperature thermoelectric material. These materials are shown to have a nearly perfect do** concentration to maximize zT regardless of the scattering mechanism. This almost one order of magnitude increase in zT is due to large electrical conductivities from oxygen co-do** as well as low thermal conductivities from alloy scattering. The maximum power factor reached was $77.98x10^{-4} W/mK^{2}$ at 300K for $In_{0.32}Ga_{0.68}N$ alloys at a carrier concentration $~6.25x10^{20} cm^{-3}$. This work indicates that $In_{x}Ga_{1-x}N$ alloys have great potential for thermoelectric applications especially at a high temperature range. △ Less

Submitted 24 July, 2019; v1 submitted 9 May, 2019; originally announced May 2019.

Non-local spin valve interferometer: Observation of superconducting spin current and Aharonov-Anandan's non-adiabatic geometric phase

Authors: Ning Lu, Jian-Sheng Xia

Abstract: An electron interferometer was designed and fabricated via a normal metal/insulator/ferromagnet non-local lateral spin valve with a ring-shaped normal metal/insulator spacer, and spin current interference was observed. A very high spin signal of 200 m$Ω$ was found in a device with 2 $μ$m injector-detector distance and magnetic field swept parallel to the plane. With a perpendicular magnetic field… ▽ More An electron interferometer was designed and fabricated via a normal metal/insulator/ferromagnet non-local lateral spin valve with a ring-shaped normal metal/insulator spacer, and spin current interference was observed. A very high spin signal of 200 m$Ω$ was found in a device with 2 $μ$m injector-detector distance and magnetic field swept parallel to the plane. With a perpendicular magnetic field sweep, a Hanle effect measurement showed both spin precession and $h/e$ oscillation. Because of the non-adiabatic nature of the precessing spins at low fields as they traverse the normal metal ring, this is an experimental observation of Aharonov-Anandan's non-adiabatic geometric phase. In addition, our observation of identical spin resistance for normal and superconducting Aluminum is inconsistent with theoretical predictions based on the quasiparticle picture. To explain the superconducting spin current we suggest that spin triplet Cooper pairs may exist in thin films of Aluminum for direct spin injection. △ Less

Submitted 13 February, 2019; originally announced February 2019.

The use of strain to tailor electronic thermoelectric transport properties: A first principles study of 2H-phase CuAlO2

Authors: Evan Witkoske, David Guzman, Yining Feng, Alejandro Strachan, Mark Lundstrom, Na Lu

Abstract: Using first principles calculations, the use of strain to adjust electronic transport and the resultant thermoelectric (TE) properties is discussed using 2H phase CuAlO2 as a test case. Transparent oxide materials, such as CuAlO2, a p-type transparent conducting oxide (TCO), have recently been studied for high temperature thermoelectric power generators and coolers for waste heat. Given TCO materi… ▽ More Using first principles calculations, the use of strain to adjust electronic transport and the resultant thermoelectric (TE) properties is discussed using 2H phase CuAlO2 as a test case. Transparent oxide materials, such as CuAlO2, a p-type transparent conducting oxide (TCO), have recently been studied for high temperature thermoelectric power generators and coolers for waste heat. Given TCO materials with relative ease of fabrication, low cost of materials, and non-toxicity, the ability to tailor them to specific temperature ranges, power needs, and size requirements, through the use of strain opens an interesting avenue. We find that strain can have a significant effect on these properties, in some cases detrimental and in others beneficial, including the potential for n-type power factors larger than the highest p-type case. The physical reasons for this behavior are explained in the terms of the thermoelectric transport distribution and the Landauer distribution of modes. △ Less

Submitted 12 December, 2018; originally announced December 2018.

A protonated brownmillerite electrolyte for superior low-temperature proton conductivity

Authors: Nianpeng Lu, Yujia Wang, Shuang Qiao, Hao-Bo Li, Qing He, Zhuolu Li, Meng Wang, **gzhao Zhang, Sze Chun Tsang, **gwen Guo, Shuzhen Yang, Jianbing Zhang, Ke Deng, Ding Zhang, **g Ma, Yang Wu, Junyi Zhu, Yoshinori Tokura, Ce-Wen Nan, Jian Wu, Pu Yu

Abstract: Design novel solid oxide electrolyte with enhanced ionic conductivity forms one of the Holy Grails in the field of materials science due to its great potential for wide range of energy applications. Conventional solid oxide electrolyte typically requires elevated temperature to activate the ionic transportation, while it has been increasing research interests to reduce the operating temperature du… ▽ More Design novel solid oxide electrolyte with enhanced ionic conductivity forms one of the Holy Grails in the field of materials science due to its great potential for wide range of energy applications. Conventional solid oxide electrolyte typically requires elevated temperature to activate the ionic transportation, while it has been increasing research interests to reduce the operating temperature due to the associated scientific and technological importance. Here, we report a conceptually new solid oxide electrolyte, HSrCoO2.5, which shows an exceptional enhanced proton conductivity at low temperature region (from room temperature to 140 oC). Combining both the experimental results and corresponding first-principles calculations, we attribute these intriguing properties to the extremely-high proton concentration as well as the well-ordered oxygen vacancy channels inherited from the novel crystalline structure of HSrCoO2.5. This result provides a new strategy to design novel solid oxide electrolyte with excellent proton conductivity for wide ranges of energy-related applications. △ Less

Submitted 26 November, 2018; originally announced November 2018.

Electric-field Control of Magnetism with Emergent Topological Hall Effect in SrRuO3 through Proton Evolution

Authors: Zhuolu Li, Shengchun Shen, Zijun Tian, Kyle Hwangbo, Meng Wang, Yujia Wang, F. Michael Bartram, Liqun He, Yingjie Lyu, Yongqi Dong, Gang Wan, Haobo Li, Nianpeng Lu, Hua Zhou, Elke Arenholz, Qing He, Luyi Yang, Weidong Luo, Pu Yu

Abstract: Ionic substitution forms an essential pathway to manipulate the carrier density and crystalline symmetry of materials via ion-lattice-electron coupling, leading to a rich spectrum of electronic states in strongly correlated systems. Using the ferromagnetic metal SrRuO3 as a model system, we demonstrate an efficient and reversible control of both carrier density and crystalline symmetry through the… ▽ More Ionic substitution forms an essential pathway to manipulate the carrier density and crystalline symmetry of materials via ion-lattice-electron coupling, leading to a rich spectrum of electronic states in strongly correlated systems. Using the ferromagnetic metal SrRuO3 as a model system, we demonstrate an efficient and reversible control of both carrier density and crystalline symmetry through the ionic liquid gating induced protonation. The insertion of protons electron-dopes SrRuO3, leading to an exotic ferromagnetic to paramagnetic phase transition along with the increase of proton concentration. Intriguingly, we observe an emergent topological Hall effect at the boundary of the phase transition as the consequence of the newly-established Dzyaloshinskii-Moriya interaction owing to the breaking of inversion symmetry in protonated SrRuO3 with the proton compositional film-depth gradient. We envision that electric-field controlled protonation opens a novel strategy to design material functionalities. △ Less

Submitted 26 November, 2018; originally announced November 2018.

Journal ref: Nature Comm. 11, 184 (2020)

Anomalous Hall Effect and Spin Fluctuations in Ionic Liquid Gated SrCoO$_3$ Thin Films

Authors: Ding Zhang, Hiroaki Ishizuka, Nianpeng Lu, Yujia Wang, Naoto Nagaosa, Pu Yu, Qi-Kun Xue

Abstract: The recent realization of epitaxial SrCoO$_3$ thin films has triggered a renewed interest in their electronic, magnetic, and ionic properties. Here we uncover several unusual magneto-transport properties of this compound, suggesting that it hosts persistent spin fluctuation down to low temperatures. We achieve the metallic SrCoO$_3$ with record-low resistivity from insulating SrCoO$_{2.5}$ by the… ▽ More The recent realization of epitaxial SrCoO$_3$ thin films has triggered a renewed interest in their electronic, magnetic, and ionic properties. Here we uncover several unusual magneto-transport properties of this compound, suggesting that it hosts persistent spin fluctuation down to low temperatures. We achieve the metallic SrCoO$_3$ with record-low resistivity from insulating SrCoO$_{2.5}$ by the ionic liquid gating. We find a linear relationship between the anomalous Hall resistivity and the longitudinal resistivity, which cannot be accounted for by the conventional mechanisms. We theoretically propose that the impurity induced chiral spin fluctuation gives rise to such a dependence. The existence of spin fluctuation manifests itself as negatively enhanced magneto-resistance of SrCoO$_3$ when the temperature approaches zero. Our study brings further insight into the unique spin state of SrCoO$_3$ and unveils a novel skew scattering mechanism for the anomalous Hall effect. △ Less

Submitted 27 July, 2018; originally announced July 2018.

Comments: 8 pages, 9 figures

Journal ref: Phys. Rev. B 97, 184433 (2018)

Moiré Excitons in Van der Waals Heterostructures

Authors: Kha Tran, Galan Moody, Fengcheng Wu, Xiaobo Lu, Junho Choi, Akshay Singh, Jacob Embley, André Zepeda, Marshall Campbell, Kyounghwan Kim, Amritesh Rai, Travis Autry, Daniel A. Sanchez, Takashi Taniguchi, Kenji Watanabe, Nanshu Lu, Sanjay K. Banerjee, Emanuel Tutuc, Li Yang, Allan H. MacDonald, Kevin L. Silverman, Xiaoqin Li

Abstract: In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moiré superlattice. While it is widely recognized that a moiré superlattice can modulate the electronic band structure and lead to novel transport properties including unconventional superconductivity and insulating behavior driven by correlati… ▽ More In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moiré superlattice. While it is widely recognized that a moiré superlattice can modulate the electronic band structure and lead to novel transport properties including unconventional superconductivity and insulating behavior driven by correlations, its influence on optical properties has not been investigated experimentally. We present spectroscopic evidence that interlayer excitons are confined by the moiré potential in a high-quality MoSe2/WSe2 heterobilayer with small rotational twist. A series of interlayer exciton resonances with either positive or negative circularly polarized emission is observed in photoluminescence, consistent with multiple exciton states confined within the moiré potential. The recombination dynamics and temperature dependence of these interlayer exciton resonances are consistent with this interpretation. These results demonstrate the feasibility of engineering artificial excitonic crystals using vdW heterostructures for nanophotonics and quantum information applications. △ Less

Submitted 10 July, 2018; originally announced July 2018.

A New Two-Dimensional Functional Material with Desirable Bandgap and Ultrahigh Carrier Mobility

Authors: Ning Lu, Zhiwen Zhuo, Hongyan Guo, ** Wu, Wei Fa, Xiaojun Wu, Xiao Cheng Zeng

Abstract: Two-dimensional (2D) semiconductors with direct and modest bandgap and ultrahigh carrier mobility are highly desired functional materials for nanoelectronic applications. Herein, we predict that monolayer CaP3 is a new 2D functional material that possesses not only a direct bandgap of 1.15 eV (based on HSE06 computation), and also a very high electron mobility up to 19930 cm2 V-1 s-1, comparable t… ▽ More Two-dimensional (2D) semiconductors with direct and modest bandgap and ultrahigh carrier mobility are highly desired functional materials for nanoelectronic applications. Herein, we predict that monolayer CaP3 is a new 2D functional material that possesses not only a direct bandgap of 1.15 eV (based on HSE06 computation), and also a very high electron mobility up to 19930 cm2 V-1 s-1, comparable to that of monolayer phosphorene. More remarkably, contrary to the bilayer phosphorene which possesses dramatically reduced carrier mobility compared to its monolayer counterpart, CaP3 bilayer possesses even higher electron mobility (22380 cm2 V-1 s-1) than its monolayer counterpart. The bandgap of 2D CaP3 can be tuned over a wide range from 1.15 to 0.37 eV (HSE06 values) through controlling the number of stacked CaP3 layers. Besides novel electronic properties, 2D CaP3 also exhibits optical absorption over the entire visible-light range. The combined novel electronic, charge mobility, and optical properties render 2D CaP3 an exciting functional material for future nanoelectronic and optoelectronic applications. △ Less

Submitted 1 March, 2018; originally announced March 2018.

Journal ref: J. Phys. Chem. Lett., 2018,9,1728-1733

MBE growth of 2H-MoTe2 and 1T'-MoTe2 on 3D substrates

Authors: Suresh Vishwanath, Aditya Sundar, Xinyu Liu, Angelica Azcatl, Edward Lochocki, Arthur R. Woll, Sergei Rouvimov, Wan Sik Hwang, Ning Lu, Xin Peng, Huai-Hsun Lien, John Weisenberger, Stephen McDonnell, Moon J. Kim, Margaret Dobrowolska, Jacek K Furdyna, Kyle Shen, Robert M. Wallace, Debdeep Jena, Huili Grace Xing

Abstract: MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic phase at higher temperatures. Molecular beam epitaxy (MBE) provides an unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynamic equilibriu… ▽ More MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic phase at higher temperatures. Molecular beam epitaxy (MBE) provides an unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynamic equilibrium. For a few-layer MoTe2 grown at a moderate rate of $\sim$6 mins per monolayer under varied Te:Mo flux ratio and substrate temperature, the boundary between the 2 phases in MBE grown MoTe2 on CaF2 is characterized using Reflection high-energy electron diffraction (RHEED), Raman spectroscopy and X-ray photoemission spectroscopy (XPS). Grazing incidence X-ray diffraction (GI-XRD) reveals a grain size of $\sim$90 Å and presence of twinned grains. XRD, transmission electron miscroscopy, RHEED, low energy electron diffraction along with lack of electrical conductivity modulation by field effect in MBE 2H-MoTe2 on GaAs (111) B show likelihood of excess Te incorporation in the films. Finally, thermal stability and air sensitivity of MBE 2H-MoTe2 is investigated by temperature dependent XRD and XPS, respectively. △ Less

Submitted 1 May, 2017; originally announced May 2017.

Comments: Six figure in main tex, 8 figures in SI and 4 tables in main text

A review for compact model of graphene field-effect transistors

Authors: Nianduan Lu, Lingfei Wang, Ling Li, Ming Liu

Abstract: Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional silicon devices. As a critical step in the design cycle of modern IC products, compact model refers to the development of models for integrated semiconductor d… ▽ More Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional silicon devices. As a critical step in the design cycle of modern IC products, compact model refers to the development of models for integrated semiconductor devices for use in circuit simulations. The purpose of this review is to provide a theoretical description of current compact model of graphene field-effect transistors. Special attention is devoted to the charge sheet model, drift-diffusion model, Boltzmann equation, density of states (DOS), and surface-potential-based compact model. Finally, an outlook of this field is briefly discussed. △ Less

Submitted 21 February, 2017; originally announced March 2017.

Comments: 18 pages, 20 figures

Report number: Chin. Phys. B 26(3) (2017) 036804 MSC Class: 65Zxx ACM Class: F.2.2; I.2.7

Journal ref: Chin. Phys. B 26(3) (2017) 036804

A Review on Mechanics and Mechanical Properties of 2D Materials - Graphene and Beyond

Authors: Deji Akinwande, Christopher J. Brennan, J. Scott Bunch, Philip Egberts, Jonathan R. Felts, Huajian Gao, Rui Huang, Joon-Seok Kim, Teng Li, Yao Li, Kenneth M. Liechti, Nanshu Lu, Harold S. Park, Evan J. Reed, Peng Wang, Boris I. Yakobson, Teng Zhang, Yong-Wei Zhang, Yao Zhou, Yong Zhu

Abstract: Since the first successful synthesis of graphene just over a decade ago, a variety of two-dimensional (2D) materials (e.g., transition metal-dichalcogenides, hexagonal boron-nitride, etc.) have been discovered. Among the many unique and attractive properties of 2D materials, mechanical properties play important roles in manufacturing, integration and performance for their potential applications. M… ▽ More Since the first successful synthesis of graphene just over a decade ago, a variety of two-dimensional (2D) materials (e.g., transition metal-dichalcogenides, hexagonal boron-nitride, etc.) have been discovered. Among the many unique and attractive properties of 2D materials, mechanical properties play important roles in manufacturing, integration and performance for their potential applications. Mechanics is indispensable in the study of mechanical properties, both experimentally and theoretically. The coupling between the mechanical and other physical properties (thermal, electronic, optical) is also of great interest in exploring novel applications, where mechanics has to be combined with condensed matter physics to establish a scalable theoretical framework. Moreover, mechanical interactions between 2D materials and various substrate materials are essential for integrated device applications of 2D materials, for which the mechanics of interfaces (adhesion and friction) has to be developed for the 2D materials. Here we review recent theoretical and experimental works related to mechanics and mechanical properties of 2D materials. While graphene is the most studied 2D material to date, we expect continual growth of interest in the mechanics of other 2D materials beyond graphene. △ Less

Submitted 4 November, 2016; originally announced November 2016.

Covalent Nitrogen Do** and Compressive Strain in MoS2 by Remote N2 Plasma Exposure

Authors: Angelica Azcatl, Xiaoye Qin, Abhijith Prakash, Chenxi Zhang, Lanxia Cheng, Qingxiao Wang, Ning Lu, Moon J. Kim, Jiyoung Kim, Kyeongjae Cho, Rafik Addou, Christopher L. Hinkle, Joerg Appenzeller, Robert M. Wallace

Abstract: Controllable do** of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homo-junctions. Herein, we propose an effective strategy for do** of MoS2 with nitrogen through a remote N2 plasma surface treatment. By monitoring the surface chemistry of MoS2 upon N2 plasma exposure using in-situ X-ray photoelectron spectroscopy, we identified the presence o… ▽ More Controllable do** of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homo-junctions. Herein, we propose an effective strategy for do** of MoS2 with nitrogen through a remote N2 plasma surface treatment. By monitoring the surface chemistry of MoS2 upon N2 plasma exposure using in-situ X-ray photoelectron spectroscopy, we identified the presence of covalently bonded nitrogen in MoS2, where substitution of the chalcogen sulfur by nitrogen is determined as the do** mechanism. Furthermore, the electrical characterization demonstrates that p-type do** of MoS2 is achieved by nitrogen do**, in agreement with theoretical predictions. Notably, we found that the presence of nitrogen can induce compressive strain in the MoS2 structure, which represents the first evidence of strain induced by substitutional do** in a transition metal dichalcogenide material. Finally, our first principle calculations support the experimental demonstration of such strain, and a correlation between nitrogen do** concentration and compressive strain in MoS2 is elucidated. △ Less

Submitted 22 July, 2016; originally announced July 2016.

Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces

Authors: Devashish P. Gopalan, Patrick C. Mende, Sergio C. de la Barrera, Shonali Dhingra, Jun Li, Kehao Zhang, Nicholas A. Simonson, Joshua A. Robinson, Ning Lu, Qingxiao Wang, Moon J. Kim, Brian D'Urso, Randall M. Feenstra

Abstract: Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the experiment was to form hexagonal boron nitride (h-BN) on top of the graphene, such layers were not obtained. Rather, in isolated surface areas, h-BN is found to form micrometer-size islands that substitute for the graphe… ▽ More Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the experiment was to form hexagonal boron nitride (h-BN) on top of the graphene, such layers were not obtained. Rather, in isolated surface areas, h-BN is found to form micrometer-size islands that substitute for the graphene. Additionally, over nearly the entire surface, the properties of the layer that was originally graphene is observed to change in a manner that is consistent with the formation of a mixed h-BN/graphene alloy, i.e. h-BNC alloy. Furthermore, following the deposition of the borazine, a small fraction of the surface is found to consist of bare copper, indicating etching of the overlying graphene. The inability to form h-BN layers on top of graphene is discussed in terms of the catalytic behavior of the underlying copper surface and the decomposition of the borazine on top of the graphene. △ Less

Submitted 10 February, 2016; v1 submitted 15 September, 2015; originally announced September 2015.

Comments: 19 pages, 12 figures; submitted to J. Mater. Res.; v2 adds Fig. 5 and makes some minor modifications to text

Journal ref: J. Mater. Res. 31, 945 (2016)

Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures

Authors: Yu-Chuan Lin, Ram Krishna Ghosh, Rafik Addou, Ning Lu, Sarah M. Eichfeld, Hui Zhu, Ming-Yang Li, Xin Peng, Moon J. Kim, Lain-Jong Li, Robert M. Wallace, Suman Datta, Joshua A. Robinson

Abstract: Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalocogenides: MoS2, MoSe2, and WSe2.The realization of MoS2-WSe2-Graphe… ▽ More Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalocogenides: MoS2, MoSe2, and WSe2.The realization of MoS2-WSe2-Graphene and WSe2-MoSe2-Graphene heterostructures leads toresonant tunneling in an atomically thin stack with spectrally narrow room temperature negative differential resistance characteristics. △ Less

Submitted 18 March, 2015; originally announced March 2015.

Journal ref: Nature Communications (2015), 6, 7311

Phosphorene nanoribbons, nanotubes and van der Waals multilayers

Authors: Hongyan Guo, Ning Lu, Jun Dai, Xiaojun Wu, Xiao Cheng Zeng

Abstract: We perform a comprehensive first-principles study of the electronic properties of phosphorene nanoribbons, phosphorene nanotubes, multilayer phosphorene, and heterobilayers of phosphorene and two-dimensional (2D) transition metal dichalcogenide (TMDC) monolayer. The tensile strain and electric-field effects on electronic properties of low-dimensional phosphorene nanostructures are also investigate… ▽ More We perform a comprehensive first-principles study of the electronic properties of phosphorene nanoribbons, phosphorene nanotubes, multilayer phosphorene, and heterobilayers of phosphorene and two-dimensional (2D) transition metal dichalcogenide (TMDC) monolayer. The tensile strain and electric-field effects on electronic properties of low-dimensional phosphorene nanostructures are also investigated. Our calculations show that zigzag phosphorene nanoribbons (z-PNRs) are metals, regardless of the ribbon width while armchair phosphorene nanoribbons (a-PNRs) are semiconductors with indirect bandgaps and the bandgaps are insensitive to variation of the ribbon width. We find that tensile compression (or expansion) strains can reduce (or increase) the bandgap of the a-PNRs while an in-plane electric field can significantly reduce the bandgap of a-PNRs, leading to the semiconductor-to-metal transition beyond certain electric field. For single-walled phosphorene nanotubes (SW-PNTs), both armchair and zigzag nanotubes are semiconductors with direct bandgaps. With either tensile strains or transverse electric field, similar behavior of bandgap modulation can arise as that for a-PNRs. It is known that multilayer phosphorene sheets are semiconductors with their bandgaps decreasing with increasing the number of multilayers. In the presence of a vertical electric field, the bandgaps of multilayer phosphorene sheets decrease with increasing the electric field, and the bandgap modulation is more significant with more layers. Lastly, heterobilayers of phosporene with a TMDC (MoS2 or WS2) monolayer are still semiconductors while their bandgaps can be reduced by applying a vertical electric field as well. △ Less

Submitted 24 March, 2014; originally announced March 2014.

Van der Waals trilayers and superlattices: Modification of electronic structures of MoS2 by intercalation

Authors: N. Lu, H. Y. Guo, L. Wang, X. J. Wu, X. C. Zeng

Abstract: We perform a comprehensive first-principles study of the electronic properties of van der Waals (vdW) trilayers via intercalating a two-dimensional (2D) monolayer (ML = BN, MoSe2, WS2, or WSe2) between MoS2 bilayer to form various MoS2/ML/MoS2 sandwich trilayers. We find that the BN monolayer is the most effective sheet to decouple the interlayer vdW coupling of the MoS2 bilayer, and the resulting… ▽ More We perform a comprehensive first-principles study of the electronic properties of van der Waals (vdW) trilayers via intercalating a two-dimensional (2D) monolayer (ML = BN, MoSe2, WS2, or WSe2) between MoS2 bilayer to form various MoS2/ML/MoS2 sandwich trilayers. We find that the BN monolayer is the most effective sheet to decouple the interlayer vdW coupling of the MoS2 bilayer, and the resulting sandwich trilayer can recover the electronic structures of the MoS2 monolayer, particularly the direct-gap character. Further study of the MoS2/BN superlattices confirms the effectiveness of the BN monolayer for the decoupling of the MoS2-MoS2 interaction. In addition, the intercalation of transition-metal dichalcogenide (TMDC) MoSe2 or WSe2 sheet renders the sandwich trilayer undergoing an indirect-gap to direct-gap transition due to the newly formed heterogeneous S/Se interfaces. In contrast, the MoS2/WS2/MoS2 sandwich trilayer still retains the indirect-gap character of the MoS2 bilayer due to the lack of the heterogeneous S/Se interfaces. Moreover, the 3D superlattice of the MoS2/TMDC heterostructures also exhibits similar electronic band characters as the MoS2/TMDC/MoS2 trilayer heterostructures, albeit slight decrease of the bandgap than the trilayers. Compared to the bulk MoS2, the 3D MoS2/TMDC superlattice can give rise to new and distinctive properties. Our study offers not only new insights into electronic properties of the vdW multilayer heterostructures but also guidance in designing new heterostructures to modify electronic structures of 2D TMDC crystals. △ Less

Submitted 13 March, 2014; originally announced March 2014.

Comments: Nanoscale, 2014

Tuning Electronic and Magnetic Properties of Early Transition Metal Dichalcogenides via Tensile Strain

Authors: Hongyan Guo, Ning Lu, Lu Wang, Xiaojun Wu, Xiao Cheng Zeng

Abstract: We have performed a systematic first-principles study of the effect of tensile strains on the electronic properties of early transition-metal dichalcogenide (TMDC) monolayers MX2 (M = Sc, Ti, Zr, Hf, Ta, Cr; X = S, Se, and Te). Our density-functional theory (DFT) calculations suggest that the tensile strain can significantly affect the electronic properties of many early TMDCs in general and the e… ▽ More We have performed a systematic first-principles study of the effect of tensile strains on the electronic properties of early transition-metal dichalcogenide (TMDC) monolayers MX2 (M = Sc, Ti, Zr, Hf, Ta, Cr; X = S, Se, and Te). Our density-functional theory (DFT) calculations suggest that the tensile strain can significantly affect the electronic properties of many early TMDCs in general and the electronic bandgap in particular. For group IVB TMDCs (TiX2, ZrX2, HfX2), the bandgap increases with the tensile strain, but for ZrX2 and HfX2 (X=S, Se), the bandgap starts to decrease at strain 6% to 8%. For the group-VB TMDCs (TaX2), the tensile strain can either induce the ferromagnetism or enhance the existing ferromagnetism. For the group-VIB TMDCs (CrX2) the direct-to-indirect bandgap transition is seen upon application of the tensile strain, except CrTe2 whose bandgap decreases with the tensile strain even though the direct character of its bandgap is retained. Lastly, for the group-IIIB TMDCs (ScX2) in the T metallic phase, we find that the tensile strain has little effect on their electronic and magnetic properties. Our study suggests that strain engineering is an effective approach to modify electronic and magnetic properties of most early TMDC monolayers, thereby opening an alternative way for future optoelectronic and spintronic applications. △ Less

Submitted 13 March, 2014; originally announced March 2014.

Comments: Journal of Physical Chemistry C, 2014

Low-energy trions in graphene quantum dots

Authors: H. -C. Cheng, N. -Y. Lue, Y. -C. Chen, G. Y. Wu

Abstract: We investigate, within the envelope function approximation, the low-energy states of trions in graphene quantum dots. The presence of valley pseudospin in graphene as an electron degree of freedom apart from spin adds convolution to the interplay between exchange symmetry and the electron-electron interaction in the trion, leading to new states of trions as well as a low energy trion spectrum diff… ▽ More We investigate, within the envelope function approximation, the low-energy states of trions in graphene quantum dots. The presence of valley pseudospin in graphene as an electron degree of freedom apart from spin adds convolution to the interplay between exchange symmetry and the electron-electron interaction in the trion, leading to new states of trions as well as a low energy trion spectrum different from those in semiconductors. Due to the involvement of valley pseudospin, it is found that the low-energy spectrum is nearly degenerate and consists of states all characterized by having an antisymmetric (pseudospin) (spin) component in the wave function, with the spin (pseudospin) part being either singlet (triplet) or triplet (singlet), as opposed to the spectrum in a semiconductor whose ground state is known to be nondegenerate and always a spin singlet in the case of X- trions. We investigate trions in the various regimes determined by the competition between quantum confinement and electron-electron interaction, both analytically and numerically. The numerical work is performed within a variational method accounting for electron mass discontinuity across the QD edge. The result for electron-hole correlation in the trion is presented. Effects of varying quantum dot size and confinement potential strength on the trion binding energy are discussed. △ Less

Submitted 11 June, 2014; v1 submitted 28 January, 2014; originally announced January 2014.

Comments: 36 pages, 7 figures

MoS2/MX2 heterobilayers: Bandgap engineering via tensile strain or external electrical field

Authors: Ning Lu, Hongyan Guo, Lei Li, Jun Dai, Lu Wang, Wai-Ning Mei, Xiaojun Wu, Xiao Cheng Zeng

Abstract: We have performed a comprehensive first-principles study of the electronic and magnetic properties of two-dimensional (2D) transition-metal dichalcogenide (TMD) heterobilayers MX2/MoS2 (M = Mo, Cr, W, Fe, V; X = S, Se). For M = Mo, Cr, W; X=S, Se, all heterobilayers show semiconducting characteristics with an indirect bandgap with the exception of the WSe2/MoS2 heterobilayer which retains the dire… ▽ More We have performed a comprehensive first-principles study of the electronic and magnetic properties of two-dimensional (2D) transition-metal dichalcogenide (TMD) heterobilayers MX2/MoS2 (M = Mo, Cr, W, Fe, V; X = S, Se). For M = Mo, Cr, W; X=S, Se, all heterobilayers show semiconducting characteristics with an indirect bandgap with the exception of the WSe2/MoS2 heterobilayer which retains the direct-band-gap character of the constituent monolayer. For M = Fe, V; X = S, Se, the MX2/MoS2 heterobilayers exhibit metallic characters. Particular attention of this study has been focused on engineering bandgap of the TMD heterobilayer materials via application of either a tensile strain or an external electric field. We find that with increasing either the biaxial or uniaxial tensile strain, the MX2/MoS2 (M=Mo, Cr, W; X=S, Se) heterobilayers can undergo a semiconductor-to-metal transition. For the WSe2/MoS2 heterobilayer, a direct-to-indirect bandgap transition may occur beyond a critical biaxial or uniaxial strain. For M (=Fe, V) and X (=S, Se), the magnetic moments of both metal and chalcogen atoms are enhanced when the MX2/MoS2 heterobilayers are under a biaxial tensile strain. Moreover, the bandgap of MX2/MoS2 (M=Mo, Cr, W; X=S, Se) heterobilayers can be reduced by the electric field. For two heterobilayers MSe2/MoS2 (M=Mo, Cr), PBE calculations suggest that the indirect-to-direct bandgap transition may occur under an external electric field. The transition is attributed to the enhanced spontaneous polarization. The tunable bandgaps in general and possible indirect-direct bandgap transitions due to tensile strain or external electric field endow the TMD heterobilayer materials a viable candidate for optoelectronic applications. △ Less

Submitted 8 December, 2013; originally announced December 2013.

Comments: 19 pages

Universal Einstein Relation Model in Disordered Organic Semiconductors under Quasi-equilibrium

Authors: Ling Li. Nianduan Lu, Ming Liu

Abstract: It is still under debate whether the classical Einstein relation in disordered organic semiconductors is valid. We investigated Einstein relation in disordered organic semiconductors theoretically. The results show that, the classic Einstein relation deviate dramatically with disorder and electric field, even in the case of thermal equilibrium. It is still under debate whether the classical Einstein relation in disordered organic semiconductors is valid. We investigated Einstein relation in disordered organic semiconductors theoretically. The results show that, the classic Einstein relation deviate dramatically with disorder and electric field, even in the case of thermal equilibrium. △ Less

Submitted 10 October, 2013; originally announced October 2013.

Physical Origin of Nonlinear transport in organic semiconductor at high carrier densities

Authors: Ling Li, Nianduan Lu, Ming Liu

Abstract: The charge transport in some organic semiconductors demonstrates nonlinear properties and further universal power-law scaling with both bias and temperature. The physical origin of this behavior is investigated here using variable range hop** theory. The results shows, this universal power-law scaling can be well explained by variable range hop** theory . Relation to the recent experimental da… ▽ More The charge transport in some organic semiconductors demonstrates nonlinear properties and further universal power-law scaling with both bias and temperature. The physical origin of this behavior is investigated here using variable range hop** theory. The results shows, this universal power-law scaling can be well explained by variable range hop** theory . Relation to the recent experimental data is also discussed. △ Less

Submitted 10 October, 2013; originally announced October 2013.

Charge carrier relaxation model in hop** system

Authors: Nianduan Lu, Ling Li, Pengxiao Suna, Ming Liu

Abstract: The relaxation phenomena of charge carriers in hop** system have been demonstrated and investigated theoretically. An analytical model describing the charge carrier relaxation is proposed based on the hop** transport theory. The relation between the material disorder, electric field and temperature and the relaxation phenomena has been discussed in detail, respectively. The calculated results… ▽ More The relaxation phenomena of charge carriers in hop** system have been demonstrated and investigated theoretically. An analytical model describing the charge carrier relaxation is proposed based on the hop** transport theory. The relation between the material disorder, electric field and temperature and the relaxation phenomena has been discussed in detail, respectively. The calculated results reveal that the increase of electric field and temperature can promote the relaxation effect in disordered systems, while the increase of material disorder will weaken the relaxation. The proposed model can explain well the stretched-exponential law by adopting the appropriate parameters. The calculation shows a good agreement with the experimental data for organic semiconductors. △ Less

Submitted 17 March, 2013; originally announced March 2013.

Journal ref: J. Appl. Phys. 116, 164504 (2014)

Quantum Manipulation of Valleys in Bilayer Graphene: Theory and Applications

Authors: G. Y. Wu, N. -Y. Lue, Y. -C. Chen

Abstract: Quantum manipulation of valleys in bilayer graphene is investigated. We establish an effective Schrodinger model, and identify two key mechanisms for valley manipulation - band structure war** and generalized valley-orbit interaction. Specifically, we implement valley qubits / FETs in bilayer graphene, as prospective quantum devices to build valley-based quantum / classical information processin… ▽ More Quantum manipulation of valleys in bilayer graphene is investigated. We establish an effective Schrodinger model, and identify two key mechanisms for valley manipulation - band structure war** and generalized valley-orbit interaction. Specifically, we implement valley qubits / FETs in bilayer graphene, as prospective quantum devices to build valley-based quantum / classical information processing. △ Less

Submitted 6 February, 2013; originally announced February 2013.

Comments: 13 pages, 2 figures

The organic functional group effect on the electronic structure of graphene nano-ribbon: A first-principles study

Authors: Nuo Liu, Zheqi Zheng, Yongxin Yao, Gui** Zhang, Ning Lu, **jian Li, Caizhuang Wang, Kaiming Ho

Abstract: We report a first-principles study of the electronic structure of functionalized graphene nano-ribbon (aGNRs-f) by organic functional group (CH2C6H5) and find that CH2C6H5 functionalized group does not produce any electronic states in the gap and the band gap is direct. By changing both the density of the organic functional group and the width of the aGNRs-f, a band gap tuning exhibits a fine thre… ▽ More We report a first-principles study of the electronic structure of functionalized graphene nano-ribbon (aGNRs-f) by organic functional group (CH2C6H5) and find that CH2C6H5 functionalized group does not produce any electronic states in the gap and the band gap is direct. By changing both the density of the organic functional group and the width of the aGNRs-f, a band gap tuning exhibits a fine three family behavior through the side effect. Meanwhile, the carriers at conduction band minimum and valence band maximum are located in both CH2C6H5 and aGNR regions when the density of the CH2C6H5 is big; while they distribute dominantly in aGNR conversely. The band gap modulation effects make the aGNRs-f good candidates with high quantum efficiency and much more wavelength choices range from 750 to 93924 nm both for lasers, light emitting diodes and photo detectors due to the direct band gap and small carrier effective masses. △ Less

Submitted 23 May, 2013; v1 submitted 1 February, 2013; originally announced February 2013.

Comments: 20 pages, 5 figures

Journal ref: J. Phys. D: Appl. Phys. 46 (2013) 235101

The VOI-Based Valleytronics

Authors: G. Y. Wu, N. -Y. Lue, Y. -C. Chen

Abstract: We discuss the valley-orbit interaction (VOI) and the concept of VOI based valleytronics. Potential of such valleytronics is illustrated, with graphene as an example material, in several frontier applications comprising FETs, quantum computing, and quantum communications. Two important devices are discussed as examples, namely, 1) valley pair qubits in coupled graphene quantum dots, to build quant… ▽ More We discuss the valley-orbit interaction (VOI) and the concept of VOI based valleytronics. Potential of such valleytronics is illustrated, with graphene as an example material, in several frontier applications comprising FETs, quantum computing, and quantum communications. Two important devices are discussed as examples, namely, 1) valley pair qubits in coupled graphene quantum dots, to build quantum networks consisting of graphene and photons, and 2) valleybased FETs consisting of graphene quantum wires (channels) and armchair graphene nanoribbons (sources and drains), to build graphene-based, low-power FET circuits. This demonstration makes the VOI-based valleytronics an attractive R & D direction in the area of electronics. △ Less

Submitted 15 February, 2013; v1 submitted 27 December, 2012; originally announced December 2012.

Comments: 26 pages, 7 figures

Comments on "Unusual Thermoelectric Behavior Indicating a Hop** to Bandlike Transport Transition in Pentacene"

Authors: Ling Li, Nianduan Lu, Ming Liu

Abstract: W. Chr. Germs, K. Guo, R. A. J. Janssen, and M. Kemerink [1] recently measured the temperature and concentration dependent seebeck coefficient in organic thin film transistor and found the seebeck coefficient increases with carrier concentration (corresponding to the gate voltage) in the low temperature regime. They further concluded that this unusual behavior is due to a transition from hop** t… ▽ More W. Chr. Germs, K. Guo, R. A. J. Janssen, and M. Kemerink [1] recently measured the temperature and concentration dependent seebeck coefficient in organic thin film transistor and found the seebeck coefficient increases with carrier concentration (corresponding to the gate voltage) in the low temperature regime. They further concluded that this unusual behavior is due to a transition from hop** transport in static localized states to bandlike transport, occurring at low temperatures. This is obviously in contrast to the previous theoretical prediction because it is widely accepted that hop** transport is more pronounced at low temperature. We will discuss the reason for this unusual behavior here and suggest that the density of states function plays an important role in concentration dependent seebeck coefficient. △ Less

Submitted 2 December, 2012; v1 submitted 19 November, 2012; originally announced November 2012.

Validity of Transport Energy in Disordered Organic Semiconductors

Authors: Ling Li, Nianduan Lu, Ming Liu

Abstract: A systematic study of the transport energy in disordered organic semiconductors based on variable range hop** theory has been presented here. The temperature, electric field, material disorder and carrier concentration dependent transport energy is extensively discussed. We demonstrate here, transport energy is not a general concept and invalid even in low electric field and concentration regime… ▽ More A systematic study of the transport energy in disordered organic semiconductors based on variable range hop** theory has been presented here. The temperature, electric field, material disorder and carrier concentration dependent transport energy is extensively discussed. We demonstrate here, transport energy is not a general concept and invalid even in low electric field and concentration regime. △ Less

Submitted 19 November, 2012; v1 submitted 18 November, 2012; originally announced November 2012.

Valley-based FETs in graphene

Authors: M. -K. Lee, N. -Y. Lue, Y. -C. Chen, C. -K. Wen, G. Y. Wu

Abstract: An analogue of the Datta-Das spin FET is investigated, which is all-graphene and based on the valley degree of freedom of electrons / holes. The "valley FET" envisioned consists of a quantum wire of gapped graphene (channel) sandwiched between two armchair graphene nanoribbons (source and drain), with the following correspondence to the spin FET: valley (K and K') \leftrightarrow spin (up and down… ▽ More An analogue of the Datta-Das spin FET is investigated, which is all-graphene and based on the valley degree of freedom of electrons / holes. The "valley FET" envisioned consists of a quantum wire of gapped graphene (channel) sandwiched between two armchair graphene nanoribbons (source and drain), with the following correspondence to the spin FET: valley (K and K') \leftrightarrow spin (up and down), armchair graphene nanoribbons \leftrightarrow ferromagnetic electrodes, graphene quantum wire \leftrightarrow semiconductor quantum wire, valley-orbit interaction \leftrightarrow Rashba spin-orbit interaction. The device works as follows. The source (drain) injects (detects) carriers in a specific valley polarization. A gate electric field is applied to the channel and modulates the valley polarization of carriers due to the valley-orbit interaction, thus controlling the amount of current collected at the drain. The valley FET is characterized by: i) smooth interfaces between electrodes and the channel, ii) strong valley-orbit interaction for electrical control of drain current, and iii) vanishing interband valley-flip scattering. By its analogy to the spin FET, the valley FET provides a potential framework to develop low-power FETs for graphene-based nanoelectronics. △ Less

Submitted 27 December, 2012; v1 submitted 31 July, 2012; originally announced August 2012.

Comments: 12 pages, 2 figures

Graphene-based qubits in quantum communications

Authors: G. Y. Wu, N. -Y. Lue

Abstract: We explore the potential application of graphene-based qubits in photonic quantum communications. In particular, the valley pair qubit in double quantum dots of gapped graphene is investigated as a quantum memory in the implementation of quantum repeaters. For the application envisioned here, our work extends the recent study of the qubit (Wu et al., arXiv: 1104.0443; Phys. Rev. B 84, 195463 (2011… ▽ More We explore the potential application of graphene-based qubits in photonic quantum communications. In particular, the valley pair qubit in double quantum dots of gapped graphene is investigated as a quantum memory in the implementation of quantum repeaters. For the application envisioned here, our work extends the recent study of the qubit (Wu et al., arXiv: 1104.0443; Phys. Rev. B 84, 195463 (2011)) to the case where the qubit is placed in a normal magnetic field-free configuration. It develops, for the configuration, a method of qubit manipulation, based on a unique AC electric field-induced, valley-orbit interaction-derived mechanism in gapped graphene. It also studies the optical response of graphene quantum dots in the configuration, in terms of valley excitation with respect to photonic polarization, and illustrates faithful photon \leftrightarrow valley quantum state transfers. This work suggests the interesting prospect of an all-graphene approach for the solid state components of a quantum network, e.g., quantum computers and quantum memories in communications. △ Less

Submitted 8 July, 2012; v1 submitted 28 April, 2012; originally announced April 2012.

Comments: 4 figures

Valley pair qubits in double quantum dots of gapped graphene

Authors: G. Y. Wu, N. -Y. Lue, L. Chang

Abstract: The rise of graphene opens a new door to qubit implementation, as discussed in the recent proposal of valley pair qubits in double quantum dots of gapped graphene (Wu et al., arXiv: 1104.0443 [cond-mat.mes-hall]). The work here presents the comprehensive theory underlying the proposal. It discusses the interaction of electrons with external magnetic and electric fields in such structures. Specific… ▽ More The rise of graphene opens a new door to qubit implementation, as discussed in the recent proposal of valley pair qubits in double quantum dots of gapped graphene (Wu et al., arXiv: 1104.0443 [cond-mat.mes-hall]). The work here presents the comprehensive theory underlying the proposal. It discusses the interaction of electrons with external magnetic and electric fields in such structures. Specifically, it examines a strong, unique mechanism, i.e., the analogue of the 1st-order relativistic effect in gapped graphene. This mechanism is state mixing free and allows, together with the electrically tunable exchange coupling, a fast, all-electric manipulation of qubits via electric gates, in the time scale of ns. The work also looks into the issue of fault tolerance in a typical case, yielding at 10oK a long qubit coherence time (~O(ms)). △ Less

Submitted 3 July, 2011; v1 submitted 24 June, 2011; originally announced June 2011.

Comments: 47 pages, 5 figures

Graphene quantum dots for valley-based quantum computing: A feasibility study

Authors: G. Y. Wu, N. -Y. Lue, L. Chang

Abstract: At the center of quantum computing1 realization is the physical implementation of qubits - two-state quantum information units. The rise of graphene2 has opened a new door to the implementation. Because graphene electrons simulate two-dimensional relativistic particles with two degenerate and independent energy valleys,3 a novel degree of freedom (d.o.f.), namely, the valley state of an electron,… ▽ More At the center of quantum computing1 realization is the physical implementation of qubits - two-state quantum information units. The rise of graphene2 has opened a new door to the implementation. Because graphene electrons simulate two-dimensional relativistic particles with two degenerate and independent energy valleys,3 a novel degree of freedom (d.o.f.), namely, the valley state of an electron, emerges as a new information carrier.4 Here, we expand the Loss-DiVincenzo quantum dot (QD) approach in electron spin qubits,5,6 and investigate the feasibility of double QD (DQD) structures in gapful graphene as "valley qubits", with the logic 0 / 1 states represented by the "valley" singlet / triplet pair. This generalization is characterized by 1) valley relaxation time ~ O(ms), and 2) electric qubit manipulation on the time scale ~ ns, based on the 1st-order "relativistic effect" unique in graphene. A potential for valley-based quantum computing is present. △ Less

Submitted 20 April, 2011; v1 submitted 3 April, 2011; originally announced April 2011.

Comments: 20 pages, 3 figures

Structure of graphene oxide: thermodynamics versus kinetics

Authors: Ning Lu, Zhenyu Li, **long Yang

Abstract: Graphene oxide (GO) is an important intermediate to prepare graphene and it is also a versatile material with various applications. However, despite its importance, the detailed structure of GO is still unclear. For example, previous theoretical studies based on energetics have suggested that hydroxyl chain is an important structural motif of GO, which, however, is found to be contrary to nuclear… ▽ More Graphene oxide (GO) is an important intermediate to prepare graphene and it is also a versatile material with various applications. However, despite its importance, the detailed structure of GO is still unclear. For example, previous theoretical studies based on energetics have suggested that hydroxyl chain is an important structural motif of GO, which, however, is found to be contrary to nuclear magnetic resonance (NMR) experiment. In this study, we check both thermodynamic and kinetic aspects missed previously. First principles thermodynamics gives a free energy based stability ordering similar to that based on energetics, and hydroxyl chain is thus thermodynamically still favorable. At the same time, by checking the calculated vibrational frequencies, we note that hydroxyl chain structure is also inconsistent with infrared experiment. Therefore, kinetics during GO synthesis is expected to make an important role in GO structure. Transition state calculations predict large energy barriers between local minima, which suggests that experimentally obtained GO has a kinetically constrained structure. △ Less

Submitted 18 February, 2011; originally announced February 2011.

Journal ref: Journal of Physical Chemistry C 2011, 115, 11991-11995

First Principles NMR Signatures of Graphene Oxide

Authors: Ning Lu, Ying Huang, Haibei Li, Zhenyu Li, **long Yang

Abstract: Nuclear magnetic resonance (NMR) has been widely used in the graphene oxide (GO) structure study. However, the detailed relationship between its spectroscopic features and the GO structural configuration has remained elusive. Based on first principles $^{13}$C chemical shift calculations using the gauge including projector augmented waves (GIPAW) method, we provide a spectrum-structure connection.… ▽ More Nuclear magnetic resonance (NMR) has been widely used in the graphene oxide (GO) structure study. However, the detailed relationship between its spectroscopic features and the GO structural configuration has remained elusive. Based on first principles $^{13}$C chemical shift calculations using the gauge including projector augmented waves (GIPAW) method, we provide a spectrum-structure connection. Chemical shift of carbon is found to be very sensitive to atomic environment, even with an identical oxidation group. Factors determining the chemical shifts for epoxy and hydroxy groups have been discussed. GO structures previously reported in the literature have been checked from the NMR point of view. The energetically favorable hydroxy chain structure is not expected to be widely existed in real GO samples according to our NMR simulations. The epoxy pair we proposed previously is also supported by chemical shift calculations. △ Less

Submitted 2 April, 2010; originally announced April 2010.

Journal ref: Journal of Chemical Physics 2010, 133, 034502

Chemical functionalization on planar polysilane and graphane

Authors: Ning Lu, Zhenyu Li, **long Yang

Abstract: Two dimensional materials are important for electronics applications. A natural way for electronic structure engineering on two dimensional systems is on-plane chemical functionalization. Based on density functional theory, we study the electronic structures of fluorine substituted planar polysilane and graphane. We find that carbon and silicon present very different surface chemistry. The indir… ▽ More Two dimensional materials are important for electronics applications. A natural way for electronic structure engineering on two dimensional systems is on-plane chemical functionalization. Based on density functional theory, we study the electronic structures of fluorine substituted planar polysilane and graphane. We find that carbon and silicon present very different surface chemistry. The indirect energy gap of planar polysilane turns to be direct upon fluorine decoration, and the gap width is mainly determined by fluorine coverage regardless of its distribution on the surface. However, electronic structure of fluorine doped graphane is very sensitive to the do** configuration, due to the competition between antibonding states and nearly-free-electron (NFE) states. With specific fluorine distribution pattern, zero-dimensional and one-dimensional NFE states can be obtained. We have also studied the chemical modification with -OH or -NH$_2$ group. Carbon seems to be too small to accommodate big functional groups on its graphane skeleton with a high concentration. △ Less

Submitted 29 April, 2009; originally announced April 2009.

Comments: 10 figures

Journal ref: Journal of Physical Chemistry C 2009, 113, 16741-16746