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Topological Corner States in Bilayer and Trilayer Systems with Vertically Stacked Topologically Distinct Layers
Authors:
Natsuko Ishida,
Motohiko Ezawa,
Guangtai Lu,
Wenbo Lin,
Yasutomo Ota,
Yasuhiko Arakawa,
Satoshi Iwamoto
Abstract:
We investigate bilayer and trilayer systems composed of topologically distinct, vertically stacked layers based on the Benalcazar-Bernevig-Hughes model. We have identified a topological phase transition that significantly alters the number of the topological corner states in these systems. Additionally, we find that traditional nested Wilson loop analysis inaccurately classifies certain phases, le…
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We investigate bilayer and trilayer systems composed of topologically distinct, vertically stacked layers based on the Benalcazar-Bernevig-Hughes model. We have identified a topological phase transition that significantly alters the number of the topological corner states in these systems. Additionally, we find that traditional nested Wilson loop analysis inaccurately classifies certain phases, leading us to evaluate multipole chiral numbers (MCNs) as a more appropriate topological invariant. This approach accurately identifies topological phases and the number of MCNs coincides with the number of corner modes, enhancing our understanding of topological insulators and opening avenues for further applications.
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Submitted 13 June, 2024;
originally announced June 2024.
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Evidence of the Monopolar-Dipolar Crossover Regime: A Multiscale Study of Ferroelastic Domains by In-Situ Microscopy Techniques
Authors:
John J R Scott,
Guangming Lu,
Brian J. Rodriguez,
Ian MacLaren,
Ekhard K. H. Salje,
Miryam Arredondo
Abstract:
The elastic interaction between kinks (and antikinks) within domain walls plays a pivotal role in sha** the domain structure, and their dynamics. In bulk materials, kinks interact as elastic monopoles, dependent on the distance between walls, and typically characterised by a rigid and straight domain configuration. In this work we investigate the evolution of the domain structure as the sample s…
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The elastic interaction between kinks (and antikinks) within domain walls plays a pivotal role in sha** the domain structure, and their dynamics. In bulk materials, kinks interact as elastic monopoles, dependent on the distance between walls, and typically characterised by a rigid and straight domain configuration. In this work we investigate the evolution of the domain structure as the sample size decreases, by means of in-situ heating techniques on free-standing samples. A significant transformation is observed: domain walls exhibit pronounced curvature, accompanied by an increase in both domain wall and junction density. This transformation is attributed to the pronounced influence of kinks, inducing sample war**, where 'dipole dipole' interactions are dominant. Moreover, we experimentally identify a critical thickness range that delineates a cross-over between the monopolar and dipolar regimens and corroborated this by detailed atomic simulations. These findings are relevant for in-situ TEM studies and for the development of novel devices based on free-standing ferroic thin films and nanomaterials.
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Submitted 29 January, 2024;
originally announced January 2024.
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Scaling Laws Governing the Elastic Properties of 3D-Graphenes
Authors:
Ming Li,
Guo Lu,
Haodong Yu,
Menglei Li,
Fawei Zheng
Abstract:
In this study, we have comprehensively investigated the scaling law for elastic properties of three-dimensional honeycomb-like graphenes (3D-graphenes) using hybrid neural network potential based molecular dynamics simulations and theoretical analyses. The elastic constants as functions of honeycomb hole size, denoted by the graphene wall length $L$, were provided. All five independent elastic con…
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In this study, we have comprehensively investigated the scaling law for elastic properties of three-dimensional honeycomb-like graphenes (3D-graphenes) using hybrid neural network potential based molecular dynamics simulations and theoretical analyses. The elastic constants as functions of honeycomb hole size, denoted by the graphene wall length $L$, were provided. All five independent elastic constants in the large $L$ limit are proportional to $L^{-1}$. The associated coefficients are combinations of two-dimensional graphene's elastic constants. High-order terms including $L^{-2}$ and $L^{-3}$ emerge for finite $L$ values. They have three origins, the distorted areas close to the joint lines of 3D-graphenes, the variation of solid angles between graphene plates, and the bending distortion of graphene plates. Significantly, the chirality becomes essential with the decreasing of $L$, because the joint line structures are different between the armchair and zigzag type 3D-graphenes. Our findings provide insights into the elastic properties of graphene-based superstructures and can be used for further studies on graphene-based materials.
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Submitted 5 January, 2024;
originally announced January 2024.
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Square Moiré Superlattices in Twisted Two-Dimensional Halide Perovskites
Authors:
Shuchen Zhang,
Linrui **,
Yuan Lu,
Linghai Zhang,
Jiaqi Yang,
Qiuchen Zhao,
Dewei Sun,
Joshua J. P. Thompson,
Biao Yuan,
Ke Ma,
Akriti,
Jee Yung Park,
Yoon Ho Lee,
Zitang Wei,
Blake P. Finkenauer,
Daria D. Blach,
Sarath Kumar,
Hailin Peng,
Arun Mannodi-Kanakkithodi,
Yi Yu,
Ermin Malic,
Gang Lu,
Letian Dou,
Libai Huang
Abstract:
Moiré superlattices have emerged as a new platform for studying strongly correlated quantum phenomena, but these systems have been largely limited to van der Waals layer two-dimensional (2D) materials. Here we introduce moiré superlattices leveraging ultra-thin, ligand-free halide perovskites, facilitated by ionic interactions. Square moiré superlattices with varying periodic lengths are clearly v…
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Moiré superlattices have emerged as a new platform for studying strongly correlated quantum phenomena, but these systems have been largely limited to van der Waals layer two-dimensional (2D) materials. Here we introduce moiré superlattices leveraging ultra-thin, ligand-free halide perovskites, facilitated by ionic interactions. Square moiré superlattices with varying periodic lengths are clearly visualized through high-resolution transmission electron microscopy. Twist-angle-dependent transient photoluminescence microscopy and electrical characterizations indicate the emergence of localized bright excitons and trapped charge carriers near a twist angle of ~10°. The localized excitons are accompanied by enhanced exciton emission, attributed to an increased oscillator strength by a theoretically forecasted flat band. This work illustrates the potential of extended ionic interaction in realizing moiré physics at room temperature, broadening the horizon for future investigations.
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Submitted 27 December, 2023;
originally announced December 2023.
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Spectroscopic and Interferometric Sum-Frequency Imaging of Strongly Coupled Phonon Polaritons in SiC Metasurfaces
Authors:
Richarda Niemann,
Niclas S. Mueller,
Sören Wasserroth,
Guanyu Lu,
Martin Wolf,
Joshua D. Caldwell,
Alexander Paarmann
Abstract:
Phonon polaritons enable waveguiding and localization of infrared light with extreme confinement and low losses. The spatial propagation and spectral resonances of such polaritons are usually probed with complementary techniques such as near-field optical microscopy and far-field reflection spectroscopy. Here, we introduce infrared-visible sum-frequency spectro-microscopy as a tool for spectroscop…
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Phonon polaritons enable waveguiding and localization of infrared light with extreme confinement and low losses. The spatial propagation and spectral resonances of such polaritons are usually probed with complementary techniques such as near-field optical microscopy and far-field reflection spectroscopy. Here, we introduce infrared-visible sum-frequency spectro-microscopy as a tool for spectroscopic imaging of phonon polaritons. The technique simultaneously provides sub-wavelength spatial resolution and highly-resolved spectral resonance information. This is implemented by resonantly exciting polaritons using a tunable infrared laser and wide-field microscopic detection of the upconverted light. We employ this technique to image hybridization and strong coupling of localized and propagating surface phonon polaritons in metasurfaces of SiC micropillars. Spectro-microscopy allows us to measure the polariton dispersion simultaneously in momentum space by angle-dependent resonance imaging, and in real space by polariton interferometry. Notably, we directly visualize how strong coupling affects the spatial localization of polaritons, inaccessible with conventional spectroscopic techniques. We further observe the formation of edge states at excitation frequencies where strong coupling prevents polariton propagation into the metasurface. Our approach is applicable to the wide range of polaritonic materials with broken inversion symmetry and can be used as a fast and non-perturbative tool to image polariton hybridization and propagation.
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Submitted 22 November, 2023;
originally announced November 2023.
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Explainable Machine Learning for Hydrogen Diffusion in Metals and Random Binary Alloys
Authors:
Grace M. Lu,
Matthew Witman,
Sapan Agarwal,
Vitalie Stavila,
Dallas R. Trinkle
Abstract:
Hydrogen diffusion in metals and alloys plays an important role in the discovery of new materials for fuel cell and energy storage technology. While analytic models use hand-selected features that have clear physical ties to hydrogen diffusion, they often lack accuracy when making quantitative predictions. Machine learning models are capable of making accurate predictions, but their inner workings…
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Hydrogen diffusion in metals and alloys plays an important role in the discovery of new materials for fuel cell and energy storage technology. While analytic models use hand-selected features that have clear physical ties to hydrogen diffusion, they often lack accuracy when making quantitative predictions. Machine learning models are capable of making accurate predictions, but their inner workings are obscured, rendering it unclear which physical features are truly important. To develop interpretable machine learning models to predict the activation energies of hydrogen diffusion in metals and random binary alloys, we create a database for physical and chemical properties of the species and use it to fit six machine learning models. Our models achieve root-mean-squared-errors between 98-119 meV on the testing data and accurately predict that elemental Ru has a large activation energy, while elemental Cr and Fe have small activation energies. By analyzing the feature importances of these fitted models, we identify relevant physical properties for predicting hydrogen diffusivity. While metrics for measuring the individual feature importances for machine learning models exist, correlations between the features lead to disagreement between models and limit the conclusions that can be drawn. Instead grouped feature importances, formed by combining the features via their correlations, agree across the six models and reveal that the two groups containing the packing factor and electronic specific heat are particularly significant for predicting hydrogen diffusion in metals and random binary alloys. This framework allows us to interpret machine learning models and enables rapid screening of new materials with the desired rates of hydrogen diffusion.
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Submitted 26 October, 2023; v1 submitted 15 August, 2023;
originally announced August 2023.
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Elucidating the Mechanism of Large Phosphate Molecule Intercalation Through Graphene Heterointerfaces
Authors:
Jiayun Liang,
Ke Ma,
Xiao Zhao,
Guanyu Lu,
Jake V. Riffle,
Carmen Andrei,
Chengye Dong,
Turker Furkan,
Siavash Rajabpour,
Rajiv Ramanujam Prabhakar,
Joshua A. Robinson,
Magdaleno R. Vasquez Jr.,
Quang Thang Trinh,
Joel W. Ager,
Miquel Salmeron,
Shaul Aloni,
Joshua D. Caldwell,
Shawna M. Hollen,
Hans A. Bechtel,
Nabil Bassim,
Matthew P. Sherburne,
Zakaria Y. Al Balushi
Abstract:
Intercalation is a process of inserting chemical species into the heterointerfaces of two-dimensional (2D) layered materials. While much research has focused on intercalating metals and small gas molecules into graphene, the intercalation of larger molecules through the basal plane of graphene remains highly unexplored. In this work, we present a new mechanism for intercalating large molecules thr…
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Intercalation is a process of inserting chemical species into the heterointerfaces of two-dimensional (2D) layered materials. While much research has focused on intercalating metals and small gas molecules into graphene, the intercalation of larger molecules through the basal plane of graphene remains highly unexplored. In this work, we present a new mechanism for intercalating large molecules through monolayer graphene to form confined oxide materials at the graphene-substrate heterointerface. We investigate the intercalation of phosphorus pentoxide (P2O5) molecules directly from the vapor phase and confirm the formation of confined P2O5 at the graphene heterointerface using various techniques. Density functional theory (DFT) corroborate the experimental results and reveal the intercalation mechanism, whereby P2O5 dissociates into small fragments catalyzed by defects in the graphene that then permeates through lattice defects and reacts at the heterointerface to form P2O5. This process can also be used to form new confined metal phosphates (e.g., 2D InPO4). While the focus of this study is on P2O5 intercalation, the possibility of intercalation from pre-dissociated molecules catalyzed by defects in graphene may exist for other types of molecules as well. This study is a significant milestone in advancing our understanding of intercalation routes of large molecules via the basal plane of graphene, as well as heterointerface chemical reactions leading to the formation of distinctive confined complex oxide compounds.
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Submitted 4 April, 2023;
originally announced April 2023.
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Plasmon-Exciton Coupling Effect on Plasmon Dam**
Authors:
Lulu Ye,
Weidong Zhang,
Aiqin Hu,
Hai Lin,
**glin Tang,
Yunkun Wang,
Chenxinyu Pan,
Pan Wang,
Xin Guo,
Limin Tong,
Yunan Gao,
Qihuang Gong,
Guowei Lu
Abstract:
Plasmon decay via the surface or interface is a critical process for practical energy conversion and plasmonic catalysis. However, the relationship between plasmon dam** and the coupling between the plasmon and 2D materials is still unclear. The spectral splitting due to plasmon-exciton interaction impedes the conventional single-particle method to evaluate the plasmon dam** rate by the spectr…
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Plasmon decay via the surface or interface is a critical process for practical energy conversion and plasmonic catalysis. However, the relationship between plasmon dam** and the coupling between the plasmon and 2D materials is still unclear. The spectral splitting due to plasmon-exciton interaction impedes the conventional single-particle method to evaluate the plasmon dam** rate by the spectral linewidth directly. Here, we investigated the interaction between a single gold nanorod (GNR) and 2D materials using the single-particle spectroscopy method assisted with in situ nanomanipulation technique by comparing scattering intensity and linewidth together. Our approach allows us to indisputably identify that the plasmon-exciton coupling in the GNR-WSe2 hybrid would induce plasmon dam**. We can also isolate the contribution between the charge transfer channel and resonant energy transfer channel for the plasmon decay in the GNR-graphene hybrid by comparing that with thin hBN layers as an intermediate medium to block the charge transfer. We find out that the contact layer between the GNR and 2D materials contributes most of the interfacial plasmon dam**. These findings contribute to a deep understanding of interfacial excitonic effects on the plasmon and 2D materials hybrid.
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Submitted 17 July, 2021;
originally announced July 2021.
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Local phase delay effect on the asymmetric spectroscopy of plasmon-exciton coupling systems
Authors:
Aiqin Hu,
Weidong Zhang,
Lulu Ye,
Ying Gu,
Zhaohang Xue,
Hai Lin,
**glin Tang,
Qihuang Gong,
Guowei Lu
Abstract:
The phase delay of a local electric field, being well-known in plasmonic nanostructures, has seldom been investigated to modulate the plasmon-exciton interaction. Here, with the single-particle spectroscopy method, we experimentally investigate the phase effect in plasmon-exciton coupling systems consisting of monolayer WSe2 and an individual gold nanorod. The local plasmon phase delay is tuned by…
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The phase delay of a local electric field, being well-known in plasmonic nanostructures, has seldom been investigated to modulate the plasmon-exciton interaction. Here, with the single-particle spectroscopy method, we experimentally investigate the phase effect in plasmon-exciton coupling systems consisting of monolayer WSe2 and an individual gold nanorod. The local plasmon phase delay is tuned by adopting various nanorods with different resonant energies respective to the exciton. We find that the local plasmon phase delay between the excitons and the plasmonic modes is as equally essential as the amplitude. The phase delay modulates the plasmon-exciton coupling considerably, resulting in an asymmetric spectral line-shape due to the interference behavior. There is an excellent agreement for the phase delay between the numerically calculated near-field phase distribution and the experimental results. The local phase delay can act as an effective way to modulate the properties of plexcitonic coupling at the nanoscale, which may have potential applications in nanoscale sensing, solar energy devices, and enhancing nonlinear processes.
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Submitted 8 March, 2021;
originally announced March 2021.
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Spin-momentum locking induced non-local voltage in topological insulator nanowire
Authors:
Jen-Ru Chen,
Pok-Lam Tse,
Ilya N. Krivorotov,
Jia G Lu
Abstract:
The momentum and spin of charge carriers in the topological insulators are constrained to be perpendicular to each other due to the strong spin-orbit coupling. We have investigated this unique spin-momentum locking property in Sb2Te3 topological insulator nanowires by injecting spin-polarized electrons through magnetic tunnel junction electrodes. Non-local voltage measurements exhibit a symmetry w…
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The momentum and spin of charge carriers in the topological insulators are constrained to be perpendicular to each other due to the strong spin-orbit coupling. We have investigated this unique spin-momentum locking property in Sb2Te3 topological insulator nanowires by injecting spin-polarized electrons through magnetic tunnel junction electrodes. Non-local voltage measurements exhibit a symmetry with respect to the magnetic field applied perpendicular to the nanowire channel, which is remarkably different from that of a non-local measurement in a channel that lacks spin-momentum locking. In stark contrast to conventional non-local spin valves, simultaneous reversal of magnetic moments of all magnetic contacts to the Sb2Te3 nanowire alters the non-local voltage. This unusual symmetry is a clear signature of the spin-momentum locking in the Sb2Te3 nanowire surface states.
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Submitted 18 September, 2020;
originally announced September 2020.
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Flux periodic oscillations and phase-coherent transport in GeTe nanowire-based devices
Authors:
**zhong Zhang,
Pok-Lam Tse,
Abdur-Rehman Jalil,
Jonas Kölzer,
Daniel Rosenbach,
Martina Luysberg,
Gregory Panaitov,
Hans Lüth,
Zhigao Hu,
Detlev Grützmacher,
Jia Grace Lu,
Thomas Schäpers
Abstract:
Despite the fact that GeTe is known to be a very interesting material for applications in thermoelectrics and for phase-change memories, the knowledge on its low-temperature transport properties is only limited. Here, we report on phase-coherent phenomena in the magnetotransport of GeTe nanowires. From universal conductance fluctuations, a phase-coherence length of about 200nm at 0.5K is determine…
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Despite the fact that GeTe is known to be a very interesting material for applications in thermoelectrics and for phase-change memories, the knowledge on its low-temperature transport properties is only limited. Here, we report on phase-coherent phenomena in the magnetotransport of GeTe nanowires. From universal conductance fluctuations, a phase-coherence length of about 200nm at 0.5K is determined for the hole carriers. The distinct phase-coherence is confirmed by the observation of Aharonov--Bohm type oscillations for magnetic fields applied along the nanowire axis. We interpret the occurrence of these magnetic flux-periodic oscillations by the formation of a tubular hole accumulation layer on the nanowire surface. In addition, for Nb/GeTe-nanowire/Nb Josephson junctions, we obtained a proximity-induced critical current of about 0.2$μ$A at 0.4K. By applying a magnetic field perpendicular to the nanowire axis, the critical current decreases monotonously with increasing magnetic field, which indicates that the structure is in the small-junction-limit. Whereas, by applying a parallel magnetic field the critical current oscillates with a period of the magnetic flux quantum indicating once again the presence of a tubular hole channel.
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Submitted 15 September, 2020;
originally announced September 2020.
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Microwave AC voltage induced phase change in Sb$_2$Te$_3$ nanowires
Authors:
Pok-Lam Tse,
Laura Mugica-Sanchez,
Fugu Tian,
Oliver Ruger,
Andreas Undisz,
George Moethrath,
Susumu Takahashi,
Carsten Ronning,
Jia Grace Lu
Abstract:
Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional modularity and promising scalability. In this work, we present the demonstration of microwave AC voltage induced phase change phenomenon at 3 GHz in single Sb…
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Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional modularity and promising scalability. In this work, we present the demonstration of microwave AC voltage induced phase change phenomenon at 3 GHz in single Sb$_2$Te$_3$ nanowires. The resistance change by a total of 6 - 7 orders of magnitude is evidenced by a transition from the crystalline metallic to the amorphous semiconducting phase, which is cross-examined by temperature dependent transport measurement and high-resolution electron microscopy analysis. This discovery could potentially tailor multi-state information bit encoding and discrimination along a single nanowire, rendering technology advancement for neuro-inspired computing devices.
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Submitted 15 August, 2020;
originally announced August 2020.
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Shedding Light on Moire Excitons: A First-Principles Perspective
Authors:
Hongli Guo,
Xu Zhang,
Gang Lu
Abstract:
Moire superlattices in van der Waals (vdW) heterostructures could trap strongly bonded and long lived interlayer excitons. Assumed to be localized, these moire excitons could form ordered quantum dot arrays, paving the way for novel optoelectronic and quantum information applications. Here we perform first principles simulations to shed light on moire excitons in twisted MoS2/WS2 heterostructures.…
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Moire superlattices in van der Waals (vdW) heterostructures could trap strongly bonded and long lived interlayer excitons. Assumed to be localized, these moire excitons could form ordered quantum dot arrays, paving the way for novel optoelectronic and quantum information applications. Here we perform first principles simulations to shed light on moire excitons in twisted MoS2/WS2 heterostructures. We provide the direct evidence of localized interlayer moire excitons in vdW heterostructures. The moire potentials are mapped out based on spatial modulations of energy gaps. Nearly flat valence bands are observed in the heterostructures without magic angles. The dependence of spatial localization and binding energy of the moire excitons on the twist angle of the heterostructures is examined. We explore how electric field can be tuned to control the position, polarity, emission energy, and hybridization strength of the moire excitons. We predict that alternating electric fields could modulate the dipole moments of hybridized moire excitons and suppress their diffusion in Moire lattices.
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Submitted 12 May, 2020;
originally announced May 2020.
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Inverse Design of Ultralow Lattice Thermal Conductivity Materials Via Lone Pair Cation Coordination Environment
Authors:
Eric B. Isaacs,
Grace M. Lu,
Christopher Wolverton
Abstract:
The presence of lone pair (LP) electrons is strongly associated with the disruption of lattice heat transport, which is a critical component of strategies to achieve efficient thermoelectric energy conversion. By exploiting an empirical relationship between lattice thermal conductivity $κ_L$ and the bond angles of pnictogen group LP cation coordination environments, we develop an inverse design st…
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The presence of lone pair (LP) electrons is strongly associated with the disruption of lattice heat transport, which is a critical component of strategies to achieve efficient thermoelectric energy conversion. By exploiting an empirical relationship between lattice thermal conductivity $κ_L$ and the bond angles of pnictogen group LP cation coordination environments, we develop an inverse design strategy based on a materials database screening to identify chalcogenide materials with ultralow $κ_L$ for thermoelectrics. Screening the $\sim$ 635,000 real and hypothetical inorganic crystals of the Open Quantum Materials Database based on the constituent elements, nominal electron counting, LP cation coordination environment, and synthesizability, we identify 189 compounds expected to exhibit ultralow $κ_L$. As a validation, we explicitly compute the lattice dynamical properties of two of the compounds (Cu$_2$AgBiPbS$_4$ and MnTl$_2$As$_2$S$_5$) using first-principles calculations and successfully find both achieve ultralow $κ_L$ values at room temperature of $\sim$ 0.3--0.4 W/(m$\cdot$K) corresponding to the amorphous limit. Our data-driven approach provides promising candidates for thermoelectric materials and opens new avenues for the design of phononic properties of materials.
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Submitted 3 April, 2020;
originally announced April 2020.
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Giant magnetoresistance amplifier for spin-orbit torque nano-oscillators
Authors:
Jen-Ru Chen,
Andrew Smith,
Eric A. Montoya,
Jia G. Lu,
Ilya N. Krivorotov
Abstract:
Spin-orbit torque nano-oscillators based on bilayers of ferromagnetic (FM) and nonmagnetic (NM) metals are ultra-compact current-controlled microwave signal sources. They serve as a convenient testbed for studies of spin-orbit torque physics and are attractive for practical applications such as microwave assisted magnetic recording, neuromorphic computing, and chip-to-chip wireless communications.…
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Spin-orbit torque nano-oscillators based on bilayers of ferromagnetic (FM) and nonmagnetic (NM) metals are ultra-compact current-controlled microwave signal sources. They serve as a convenient testbed for studies of spin-orbit torque physics and are attractive for practical applications such as microwave assisted magnetic recording, neuromorphic computing, and chip-to-chip wireless communications. However, a major drawback of these devices is low output microwave power arising from the relatively small anisotropic magnetoresistance (AMR) of the FM layer. Here we experimentally show that the output power of a spin-orbit torque nano-oscillator can be enhanced by nearly three orders of magnitude without compromising its structural simplicity. Addition of a FM reference layer to the oscillator allows us to employ current-in-plane giant magnetoresistance (CIP GMR) to boost the output power of the device. This enhancement of the output power is a result of both large magnitude of GMR compared to that of AMR and different angular dependences of GMR and AMR. Our results pave the way for practical applications of spin-orbit torque nano-oscillators.
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Submitted 29 August, 2019;
originally announced August 2019.
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Grain Boundaries in Chemical Vapor Deposited Atomically Thin Hexagonal Boron Nitride
Authors:
Xibiao Ren,
Jichen Dong,
Peng Yang,
Jidong Li,
Guangyuan Lu,
Tianru Wu,
Haomin Wang,
Wanlin Guo,
Ze Zhang,
Feng Ding,
Chuanhong **
Abstract:
Large-area two-dimensional (2D) materials for technical applications can now be produced by chemical vapor deposition (CVD). Unfortunately, grain boundaries (GBs) are ubiquitously introduced as a result of the coalescence of grains with different crystallographic orientations. It is well known that the properties of materials largely depend on GB structures. Here, we carried out a systematic study…
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Large-area two-dimensional (2D) materials for technical applications can now be produced by chemical vapor deposition (CVD). Unfortunately, grain boundaries (GBs) are ubiquitously introduced as a result of the coalescence of grains with different crystallographic orientations. It is well known that the properties of materials largely depend on GB structures. Here, we carried out a systematic study on the GB structures in CVD-grown polycrystalline h-BN monolayer films by transmission electron microscope. Interestingly, most of these GBs are revealed to be formed via overlap** between neighboring grains, which are distinct from the covalently bonded GBs as commonly observed in other 2D materials. Further density functional theory (DFT) calculations show that the hydrogen plays an essential role in overlap** GB formation. This work provides an in-depth understanding of the microstructures and formation mechanisms of GBs in CVD-grown h-BN films, which should be informative in guiding the precisely controlled synthesis of large area single crystalline h-BN and other 2D materials.
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Submitted 19 November, 2018;
originally announced November 2018.
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Carbonate-Bridged Dinuclear and Trinuclear Dysprosium(III) Single-Molecule Magnets
Authors:
Guang Lu,
Yan-Cong Chen,
Si-Guo Wu,
Guo-Zhang Huang,
Jun-Liang Liu,
Zhao-** Ni,
Ming-Liang Tong
Abstract:
In 2016, we reported a single-ion magnet [Dy(bbpen)Br] with an energy barrier over 1000 K. Here a dimeric [Dy2(mu-CO3)(bbpen)2(H2O)].H2O.CH3OH (1) and a trimeric [Dy3(mu3-CO3)(bppen)3](CF3SO3).H2O (2) single-molecule magnets (SMMs) were obtained through replacing the Br- anion with the carbonate bridge. Their effective relaxation barriers at zero dc field are decrease to 51 K and 422 K, respective…
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In 2016, we reported a single-ion magnet [Dy(bbpen)Br] with an energy barrier over 1000 K. Here a dimeric [Dy2(mu-CO3)(bbpen)2(H2O)].H2O.CH3OH (1) and a trimeric [Dy3(mu3-CO3)(bppen)3](CF3SO3).H2O (2) single-molecule magnets (SMMs) were obtained through replacing the Br- anion with the carbonate bridge. Their effective relaxation barriers at zero dc field are decrease to 51 K and 422 K, respectively, which are consist with their structural modifications.
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Submitted 15 July, 2018;
originally announced July 2018.
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Charge Transport in Hybrid Halide Perovskites
Authors:
Mingliang Zhang,
Xu Zhang,
Ling-Yi Huang,
Hai-Qing Lin,
Gang Lu
Abstract:
Charge transport is crucial to the performance of hybrid halide perovskite solar cells. A theoretical model based on large polarons is proposed to elucidate charge transport properties in the perovskites. Critical new physical insights are incorporated into the model, including the recognitions that acoustic phonons as opposed to optical phonons are responsible for the scattering of the polarons;…
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Charge transport is crucial to the performance of hybrid halide perovskite solar cells. A theoretical model based on large polarons is proposed to elucidate charge transport properties in the perovskites. Critical new physical insights are incorporated into the model, including the recognitions that acoustic phonons as opposed to optical phonons are responsible for the scattering of the polarons; these acoustic phonons are fully excited due to the "softness" of the perovskites, and the temperature-dependent dielectric function underlies the temperature dependence of charge carrier mobility. This work resolves key controversies in literature and forms a starting point for more rigorous first-principles predictions of charge transport.
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Submitted 25 October, 2017; v1 submitted 30 August, 2017;
originally announced August 2017.
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Quantum-interference transport through surface layers of indium-doped ZnO nanowires
Authors:
Shao-Pin Chiu,
Jia G. Lu,
Juhn-Jong Lin
Abstract:
We have fabricated indium-doped ZnO (IZO) nanowires (NWs) and carried out 4-probe electrical-transport measurements at low temperatures. The NWs reveal charge conduction behavior characteristic of disordered metals. In addition to the $T$ dependence of resistance $R$, we have measured the magnetoresistances (MR) in perpendicular and parallel magnetic fields. Our $R(T)$ and MR data in different…
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We have fabricated indium-doped ZnO (IZO) nanowires (NWs) and carried out 4-probe electrical-transport measurements at low temperatures. The NWs reveal charge conduction behavior characteristic of disordered metals. In addition to the $T$ dependence of resistance $R$, we have measured the magnetoresistances (MR) in perpendicular and parallel magnetic fields. Our $R(T)$ and MR data in different $T$ intervals are consistent with the theoretical predictions of the one- (1D), two- (2D) or three-dimensional (3D) weak-localization (WL) and the electron-electron interaction (EEI) effects. In particular, a few dimensionality crossovers in the two effects are observed. These crossover phenomena are consistent with the model of a "core-shell-like structure" in individual IZO NWs, where an outer shell of a thickness $t$ ($\simeq$ 15-17 nm) is responsible for the quantum-interference transport. In the WL effect, as the electron dephasing length $L_φ$ gradually decreases with increasing $T$ from the lowest measurement temperatures, a 1D-to-2D dimensionality crossover takes place around a characteristic temperature where $L_φ$ approximately equals $d$, an effective NW diameter which is slightly smaller than the geometric diameter. As $T$ further increases, a 2D-to-3D dimensionality crossover occurs around another characteristic temperature where $L_φ$ approximately equals $t$ ($< d$). In the EEI effect, a 2D-to-3D dimensionality crossover takes place when the thermal diffusion length $L_T$ progressively decreases with increasing $T$ and approaches $t$. However, a crossover to the 1D EEI effect is not seen because $L_T < d$ even at $T$ = 1 K in our IZO NWs. Furthermore, we explain the various inelastic electron scattering processes which govern $L_φ$. This work indicates that the surface-related conduction processes are essential to doped semiconductor nanostructures.
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Submitted 17 February, 2017;
originally announced February 2017.
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Comment on "Linear Scaling of the Exciton Binding Energy versus the Band Gap of Two-Dimensional Materials"
Authors:
Mingliang Zhang,
Ling-Yi Huang,
Xu Zhang,
Gang Lu
Abstract:
In a recent letter [J. -H. Choi et al. Phys. Rev. Lett. 115, 066403 (2015)], a universal linear relation between the binding energy Eb of exciton and the band gap Eg is found in different quasi-2D semiconductors. However, when one extrapolates the straight line to Eg=0, a positive Eb is obtained. This means that a stable exciton exists in a metal (Eg=0), or in other words, the excitation energy is…
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In a recent letter [J. -H. Choi et al. Phys. Rev. Lett. 115, 066403 (2015)], a universal linear relation between the binding energy Eb of exciton and the band gap Eg is found in different quasi-2D semiconductors. However, when one extrapolates the straight line to Eg=0, a positive Eb is obtained. This means that a stable exciton exists in a metal (Eg=0), or in other words, the excitation energy is negative. Therefore, for quasi-2D semiconductors with small band gap, Eb vs. Eg must deviate from the straight line suggested in the Letter.
We performed similar GW+BSE calculation as the Letter for compressed phosphorene and stretched graphene. At larger band gap, our data fall in the same straight lien as the Letter. But for the quasi-2D semiconductors with small band gap, the Eb vs. Eg curve approaches to zero. A simple model based on local instantaneous screened interaction gives reasonable agreement with the more rigorous calculations. For the quasi-2D semiconductors with diminishing gap Eg<0.3eV, due to the nonlocal retarded effect induced by the strong screening in the small gap materials, one has to use 2-time transition amplitude (Bethe-Salpeter wave function) to describe exciton.
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Submitted 13 September, 2016;
originally announced September 2016.
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Dislocation core properties of β-tin: A first-principles study
Authors:
M. A. Bhatia,
M. Azarnoush,
I. Adlakha,
G. Lu,
K. N. Solanki
Abstract:
Dislocation core properties of tin (β-Sn) were investigated using the semi-discrete variational Peierls-Nabarro model (SVPN). The SVPN model, which connects the continuum elasticity treatment of the long-range strain field around a dislocation with an approximate treatment of the dislocation core, was employed to calculate various core properties, including the core energetics, widths, and Peierls…
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Dislocation core properties of tin (β-Sn) were investigated using the semi-discrete variational Peierls-Nabarro model (SVPN). The SVPN model, which connects the continuum elasticity treatment of the long-range strain field around a dislocation with an approximate treatment of the dislocation core, was employed to calculate various core properties, including the core energetics, widths, and Peierls stresses for different dislocation structures. The role of core energetics and properties on dislocation character and subsequent slip behavior in β-Sn was investigated. For instance, this work shows that a widely spread dislocation core on the {110} plane as compared to dislocations on the {100} and {101} planes. Physically, the narrowing or widening of the core will significantly affect the mobility of dislocations as the Peierls stress is exponentially related to the dislocation core width in β-Sn. In general, the Peierls stress for the screw dislocation was found to be orders of magnitude higher than the edge dislocation, i.e., the more the edge component of a mixed dislocation, the greater the dislocation mobility (lower the Peierls stress). The largest Peierls stress observed was 365 MPa for the dislocation on the {101} plane. Furthermore, from the density plot, we see a double peak for the 0deg (screw) and 30deg dislocations which suggests the dissociation of dislocations along these planes. Thus, for the {101} <-101> slip system, we observed dislocation dissociation into three partials with metastable states. Overall, this work provides qualitative insights that aid in understanding the plastic deformation in β-Sn.
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Submitted 19 January, 2017; v1 submitted 28 April, 2016;
originally announced April 2016.
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Quantum Electrodynamics is Crucial for Plasmonic Resonance of Metallic Nanostructures
Authors:
Mingliang Zhang,
Xu Zhang,
Gang Lu
Abstract:
Plasmonic resonance of a metallic nanostructure results from coherent motion of its conduction electrons driven by incident light. At the resonance, the induced dipole in the nanostructure is proportional to the number of the conduction electrons, hence $10^{7}$ times larger than that in an atom. The interaction energy between the induced dipole and fluctuating virtual field of the incident light…
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Plasmonic resonance of a metallic nanostructure results from coherent motion of its conduction electrons driven by incident light. At the resonance, the induced dipole in the nanostructure is proportional to the number of the conduction electrons, hence $10^{7}$ times larger than that in an atom. The interaction energy between the induced dipole and fluctuating virtual field of the incident light can reach a few tenths of an eV. Therefore, the classical electromagnetism dominating the field becomes inadequate. We argue that quantum electrodynamics (QED) should be used instead as the fundamental theory to describe the virtual field and its interaction with the electrons. Based on QED, we derive analytic expressions for the plasmonic resonant frequency, which depends on three easily accessible material parameters. The analytic theory reproduces very well the experimental data, and can be used for rational design of materials.
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Submitted 8 June, 2015;
originally announced June 2015.
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Inertial spin alignment in a circular magnetic nanotube
Authors:
G. Bergmann,
R. S. Thompson,
J. G. Lu
Abstract:
In Co-nanotubes with a curling magnetization, the orbital motion of the conduction electrons interacts with their spin. We predict that the (absolute) value of the magnetic energy of the spin is strongly reduced. The new precession axis for the spin is almost parallel to the axis of the nanotube and precesses with the angular velocity of the electron. The physics of the ferromagnet is considerably…
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In Co-nanotubes with a curling magnetization, the orbital motion of the conduction electrons interacts with their spin. We predict that the (absolute) value of the magnetic energy of the spin is strongly reduced. The new precession axis for the spin is almost parallel to the axis of the nanotube and precesses with the angular velocity of the electron. The physics of the ferromagnet is considerably modified.
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Submitted 13 March, 2015;
originally announced March 2015.
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Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy
Authors:
Guangyuan Lu,
Tianru Wu,
Qinghong Yuan,
Huishan Wang,
Haomin Wang,
Feng Ding,
Xiaoming Xie,
Mianheng Jiang
Abstract:
Hexagonal boron nitride (h-BN) has attracted significant attention due to its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapor deposition in earlier reports are always polycrystalline with small grains due to high nucleation density on substrates. Here we report the successful synthesis of large single-…
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Hexagonal boron nitride (h-BN) has attracted significant attention due to its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapor deposition in earlier reports are always polycrystalline with small grains due to high nucleation density on substrates. Here we report the successful synthesis of large single-crystal h-BN grains on rational designed Cu-Ni alloy foils. It is found that the nucleation density can be greatly reduced to 60 per mm2 by optimizing Ni ratio in substrates. The strategy enables the growth of single-crystal h-BN grains up to 7,500 um2, about 2 orders larger than that in previous reports. This work not only provides valuable information for understanding h-BN nucleation and growth mechanisms, but also gives an effective alternative to exfoliated h-BN as a high-quality dielectric layer for large-scale nano-electronic applications.
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Submitted 10 March, 2015;
originally announced March 2015.
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Plasmonic nano-resonator enhanced one-photon luminescence from single gold nanorods
Authors:
Keyu Xia,
Yingbo He,
Hongming Shen,
Yuqing Cheng,
Qihuang Gong,
Guowei Lu
Abstract:
Strong Stokes and anti-Stokes one-photon luminescence from single gold nanorods is measured in experiments. It is found that the intensity and polarization of the Stokes and anti-Stokes emissions are in strong correlation. Our experimental observation discovered a coherent process in light emission from single gold nanorods. We present a theoretical mode, based on the concept of cavity resonance,…
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Strong Stokes and anti-Stokes one-photon luminescence from single gold nanorods is measured in experiments. It is found that the intensity and polarization of the Stokes and anti-Stokes emissions are in strong correlation. Our experimental observation discovered a coherent process in light emission from single gold nanorods. We present a theoretical mode, based on the concept of cavity resonance, for consistently understanding both Stokes and anti-Stokes photoluminescence. Our theory is in good agreement of all our measurements.
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Submitted 26 October, 2015; v1 submitted 23 July, 2014;
originally announced July 2014.
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A Unified Mechanism for Hydrogen Trap** at Metal Vacancies
Authors:
Weiwei Xing,
Xing-Qiu Chen,
Gang Lu,
Dianzhong Li,
Yiyi Li
Abstract:
Interaction between hydrogen (H) and metals is central to many materials problems of scientific and technological importance. Chief among them is the development of H storage and H-resistant materials. H segregation or trap** at lattice defects, including vacancies, dislocations, grain boundaries, etc, plays a crucial role in determining the properties of these materials. Here, through first-pri…
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Interaction between hydrogen (H) and metals is central to many materials problems of scientific and technological importance. Chief among them is the development of H storage and H-resistant materials. H segregation or trap** at lattice defects, including vacancies, dislocations, grain boundaries, etc, plays a crucial role in determining the properties of these materials. Here, through first-principles simulations, we propose a unified mechanism involving charge transfer induced strain destabilization to understand H segregation behavior at vacancies. We discover that H prefers to occupy interstitials with high pre-existing charge densities and the availability of such interstitials sets the limit on H trap** capacity at a vacancy. Once the maximum H capacity is reached, the dominant charge donors switch from the nearest-neighbor (NN) to the next-nearest-neighbor (NNN) metal atoms. Accompanying with this long-range charge transfer, a significant reorganization energy would occur, leading to instability of the H-vacancy complex. The physical picture unveiled here appears universal across the BCC series and is believed to be relevant to other metals/defects as well. The insight gained from this study is expected to have important implications for the design of H storage and H-resistant materials.
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Submitted 4 November, 2013;
originally announced November 2013.
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Single-Layer MoS2 Phototransistors
Authors:
Zongyou Yin,
Hai Li,
Hong Li,
Lin Jiang,
Yumeng Shi,
Yinghui Sun,
Gang Lu,
Qing Zhang,
Xiaodong Chen,
Hua Zhang
Abstract:
A new phototransistor based on the mechanically-exfoliated single-layer MoS2 nanosheet is fabricated and its light-induced electric properties are investigated in details. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely fini…
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A new phototransistor based on the mechanically-exfoliated single-layer MoS2 nanosheet is fabricated and its light-induced electric properties are investigated in details. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms and it shows good stability. Especially, the single-layer MoS2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching and good photoresponsivity from the MoS2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multi-functional optoelectronic device applications in future.
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Submitted 30 October, 2013;
originally announced October 2013.
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Rapid and reliable thickness identification of two-dimensional nanosheets using optical microscopy
Authors:
Hai Li,
Jumiati Wu,
Xiao Huang,
Gang Lu,
Jian Yang,
Xin Lu,
Qihua Xiong,
Hua Zhang
Abstract:
The physical and electronic properties of ultrathin two-dimensional (2D) layered nanomaterials are highly related to their thickness. Therefore, the rapid and accurate identification of single- and few- to multi-layer nanosheets is essential to their fundamental study and practical applications. Here, a universal optical method has been developed for simple, rapid and reliable identification of si…
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The physical and electronic properties of ultrathin two-dimensional (2D) layered nanomaterials are highly related to their thickness. Therefore, the rapid and accurate identification of single- and few- to multi-layer nanosheets is essential to their fundamental study and practical applications. Here, a universal optical method has been developed for simple, rapid and reliable identification of single- to quindecuple-layer (1L-15L) 2D nanosheets, including graphene, MoS2, WSe2 and TaS2, on Si substrates coated with 90 nm or 300 nm SiO2. The optical contrast differences between the substrates and 2D nanosheets with different layer numbers were collected and tabulated, serving as a standard reference, from which the layer number of a given nanosheet can be readily and reliably determined without using complex calculation nor expensive instrument. Our general optical identification method will facilitate the thickness-dependent study of various 2D nanomaterials, and expedite their research toward practical applications.
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Submitted 25 October, 2013;
originally announced October 2013.
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Synthesis of Self-assembled Iron Silicon Oxide Nanowires onto Single-crystalline Si(100)
Authors:
Guotao Lu
Abstract:
Iron silicon oxide nanowire has been synthesized by putting single crystalline Si(100) wafer into ammonium iron sulfate, hydrogen peroxide, and triethylamine solution heated to from 70 to 100 degree in the air. The prepared iron silicon oxide nanowires with diameters of about 10nm (onto non etched Si(100) wafer) and about 75nm(onto etched Si(100) wafer) and their self assembles were characterized.…
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Iron silicon oxide nanowire has been synthesized by putting single crystalline Si(100) wafer into ammonium iron sulfate, hydrogen peroxide, and triethylamine solution heated to from 70 to 100 degree in the air. The prepared iron silicon oxide nanowires with diameters of about 10nm (onto non etched Si(100) wafer) and about 75nm(onto etched Si(100) wafer) and their self assembles were characterized. The possible mechanism that accounted for the formation of iron silicon oxide nanowire is suggested based on experimental evidence.
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Submitted 29 July, 2013;
originally announced July 2013.
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Preparation and characterization of Bismaleimide resin/titania nanocomposites via sol-gel process
Authors:
Guotao Lu,
Ying Huang
Abstract:
Bismaleimide (BMI) resin/ titania nanocomposites were synthesized from allylated-phenolic modified bismaleimide resin and TiO2 via the sol-gel process of tetrabutyltitanate (Ti(OnBu)4, TBT). These nanocomposite materials were characterized by FT-IR, XRD, FE-SEM, TGA and DMA. It was found that the nano-scale TiO2 particles were formed in the AP-BMI resin matrix, and the average primary particle siz…
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Bismaleimide (BMI) resin/ titania nanocomposites were synthesized from allylated-phenolic modified bismaleimide resin and TiO2 via the sol-gel process of tetrabutyltitanate (Ti(OnBu)4, TBT). These nanocomposite materials were characterized by FT-IR, XRD, FE-SEM, TGA and DMA. It was found that the nano-scale TiO2 particles were formed in the AP-BMI resin matrix, and the average primary particle size of the dispersed phase in the nanocomposites was less than 100nm, but the particle aggregates with bigger size existed. Obvious improvements of glass transition temperature and heat resistance properties of the AP-BMI resins were achieved by the introduction of nano-sized TiO2 inorganic phase, and the modulus of the material was also improved.
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Submitted 26 April, 2013;
originally announced April 2013.
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Novel Bismaleimide Resin/Silsesquioxane and Titania Nanocomposites by the Sol-Gel Process: the Preparation, Morphology, Thermal and Thermo-mechanical Properties
Authors:
Guotao Lu,
Ying Huang
Abstract:
Bismaleimide(BMI) resin/silsesquioxane or titania nanocomposites were synthesized from bismaleimide resin and SiO3/2 or TiO2 via the sol-gel process of N-γ-triethoxylsilylpropyl-maleamic acid (TESPMA) or tetrabutyltitanate (Ti(OnBu)4, TBT), respectively, in the presence of the AP-BMI prepolymers. These nanocomposite materials were characterized by FT-IR, FE-SEM, TGA and DMA. It was found that the…
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Bismaleimide(BMI) resin/silsesquioxane or titania nanocomposites were synthesized from bismaleimide resin and SiO3/2 or TiO2 via the sol-gel process of N-γ-triethoxylsilylpropyl-maleamic acid (TESPMA) or tetrabutyltitanate (Ti(OnBu)4, TBT), respectively, in the presence of the AP-BMI prepolymers. These nanocomposite materials were characterized by FT-IR, FE-SEM, TGA and DMA. It was found that the nano-scale SiO3/2 or TiO2 particles were formed in the AP-BMI resin matrix and the average original particle size of the dispersed phase in the nanocomposites was less than 100nm, but the particle aggregates with bigger size existed. Obvious improvements of Tg and the heat resistance of the AP-BMI resin were achieved by introduction of the nano-sized SiO3/2 inorganic phase, and the modulus at high temperatures was improved too. The incorporation of nano-scale TiO2 particles into the AP-BMI resin improved the Tg of the polymer, but lowered the thermal resistance of the material, and improved the modulus of the material at lower temperatures, but lowered the modulus at higher temperatures.
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Submitted 31 March, 2013;
originally announced April 2013.
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Continuous-distribution puddle model for conduction in trilayer graphene
Authors:
Richard S. Thompson,
Yi-Chen Chang,
Jia G. Lu
Abstract:
An insulator-to-metal transition is observed in trilayer graphene based on the temperature dependence of the resistance under different applied gate voltages. At small gate voltages the resistance decreases with increasing temperature due to the increase in carrier concentration resulting from thermal excitation of electron-hole pairs. At large gate voltages excitation of electron-hole pairs is su…
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An insulator-to-metal transition is observed in trilayer graphene based on the temperature dependence of the resistance under different applied gate voltages. At small gate voltages the resistance decreases with increasing temperature due to the increase in carrier concentration resulting from thermal excitation of electron-hole pairs. At large gate voltages excitation of electron-hole pairs is suppressed, and the resistance increases with increasing temperature because of the enhanced electron-phonon scattering. We find that the simple model with overlap** conduction and valence bands, each with quadratic dispersion relations, is unsatisfactory. Instead, we conclude that impurities in the substrate that create local puddles of higher electron or hole densities are responsible for the residual conductivity at low temperatures. The best fit is obtained using a continuous distribution of puddles. From the fit the average of the electron and hole effective masses can be determined.
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Submitted 23 August, 2012; v1 submitted 31 August, 2011;
originally announced September 2011.
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Cluster Identification and Characterization of Physical Fields
Authors:
Guangcai Zhang,
Aiguo Xu,
Guo Lu,
Zeyao Mo
Abstract:
The description of complex configuration is a difficult issue. We present a powerful technique for cluster identification and characterization. The scheme is designed to treat with and analyze the experimental and/or simulation data from various methods. Main steps are as follows. We first divide the space using face or volume elements from discrete points. Then, combine the elements with the sa…
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The description of complex configuration is a difficult issue. We present a powerful technique for cluster identification and characterization. The scheme is designed to treat with and analyze the experimental and/or simulation data from various methods. Main steps are as follows. We first divide the space using face or volume elements from discrete points. Then, combine the elements with the same and/or similar properties to construct clusters with special physical characterizations. In the algorithm, we adopt administrative structure of hierarchy-tree for spatial bodies such as points, lines, faces, blocks, and clusters. Two fast search algorithms with the complexity are realized. The establishing of the hierarchy-tree and the fast searching of spatial bodies are general, which are independent of spatial dimensions. Therefore, it is easy to extend the skill to other fields. As a verification and validation, we treated with and analyzed some two-dimensional and three-dimensional random data.
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Submitted 27 January, 2010;
originally announced January 2010.
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Quantum Mechanical Simulations of Nanoindentation of Al Thin Film
Authors:
Qing Peng,
Xu Zhang,
Gang Lu
Abstract:
QCDFT is a multiscale modeling approach that can simulate multi-million atoms effectively via density functional theory (DFT). The method is based on the framework of quasicontinuum (QC) approach with DFT as its sole energetics formulation. The local QC energy is calculated by DFT with Cauchy-Born hypothesis and the nonlocal QC energy is determined by a self-consistent embedding approach, which…
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QCDFT is a multiscale modeling approach that can simulate multi-million atoms effectively via density functional theory (DFT). The method is based on the framework of quasicontinuum (QC) approach with DFT as its sole energetics formulation. The local QC energy is calculated by DFT with Cauchy-Born hypothesis and the nonlocal QC energy is determined by a self-consistent embedding approach, which couples nonlocal QC atoms to the vertices of the finite-elements at the local QC region. The QCDFT method is applied to a nanoindentation study of an Al thin film in the presence and absence of Mg impurities. The results show that the randomly distributed Mg impurities can significantly increase the ideal and yield strength of the Al thin film.
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Submitted 29 October, 2009; v1 submitted 20 September, 2009;
originally announced September 2009.
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Weak localization and electron-electron interactions in Indium-doped ZnO nanowires
Authors:
Richard S. Thompson,
Dongdong Li,
Christopher M. Witte,
Jia G. Lu
Abstract:
Single crystal ZnO nanowires doped with indium are synthesized via the laser-assisted chemical vapor deposition method. The conductivity of the nanowires is measured at low temperatures in magnetic fields both perpendicular and parallel to the wire axes. A quantitative fit of our data is obtained, consistent with the theory of a quasi-one-dimensional metallic system with quantum corrections due…
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Single crystal ZnO nanowires doped with indium are synthesized via the laser-assisted chemical vapor deposition method. The conductivity of the nanowires is measured at low temperatures in magnetic fields both perpendicular and parallel to the wire axes. A quantitative fit of our data is obtained, consistent with the theory of a quasi-one-dimensional metallic system with quantum corrections due to weak localization and electron-electron interactions. The anisotropy of the magneto-conductivity agrees with theory. The two quantum corrections are of approximately equal magnitude with respective temperature dependences of T^-1/3 and T^-1/2. The alternative model of quasi-two-dimensional surface conductivity is excluded by the absence of oscillations in the magneto-conductivity in parallel magnetic fields.
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Submitted 30 July, 2009;
originally announced July 2009.
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A comparative study of fracture in Al: quantum mechanical vs. empirical atomistic description
Authors:
Qing Peng,
Gang Lu
Abstract:
A comparative study of fracture in Al is carried out by using quantum mechanical and empirical atomistic description of atomic interaction at crack tip. The former is accomplished with the density functional theory (DFT) based Quasicontinuum method (QCDFT) and the latter with the original Quasicontinuum method (EAM-QC). Aside from quantitative differences, the two descriptions also yield qualita…
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A comparative study of fracture in Al is carried out by using quantum mechanical and empirical atomistic description of atomic interaction at crack tip. The former is accomplished with the density functional theory (DFT) based Quasicontinuum method (QCDFT) and the latter with the original Quasicontinuum method (EAM-QC). Aside from quantitative differences, the two descriptions also yield qualitatively distinctive fracture behavior. While EAM-QC predicts a straight crack front and a micro-twinning at the crack tip, QCDFT finds a more rounded crack profile and the absence of twinning. Although many dislocations are emitted from the crack tip in EAM-QC, they all glide on a single slip plane. In contrast, only two dislocations are nucleated under the maximum load applied in QCDFT, and they glide on two adjacent slip planes. The electron charge density develops sharp corners at the crack tip in EAM-QC, while it is smoother in QCDFT. The physics underlying these differences is discussed.
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Submitted 21 July, 2009;
originally announced July 2009.
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Structure, mechanical and thermodynamic stability of vacancy clusters in Cu
Authors:
Qing Peng,
Xu Zhang,
Gang Lu
Abstract:
The atomic structure, mechanical and thermodynamic stability of vacancy clusters in Cu are studied by atomistic simulations. The most stable atomic configuration of small vacancy clusters is determined. The mechanical stability of the vacancy clusters is examined by applying uniaxial and volumetric tensile strain to the system. The yield stress and yield strain of the system are significantly re…
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The atomic structure, mechanical and thermodynamic stability of vacancy clusters in Cu are studied by atomistic simulations. The most stable atomic configuration of small vacancy clusters is determined. The mechanical stability of the vacancy clusters is examined by applying uniaxial and volumetric tensile strain to the system. The yield stress and yield strain of the system are significantly reduced comparing to the prefect lattice. The dependence of vacancy formation and binding energy as a function of strain is explored and can be understood from the liquid-drop model. We find that the formation energy of the vacancy clusters decreases monotonically as a function of the uniaxial strain, while the formation energy increases first then decreases under the volumetric tensile strain. The thermodynamic stability of the vacancy clusters is analyzed by calculating the Gibbs free binding energy and the total probability of dissociation of the vacancy clusters at 300 K and 900 K under uniaxial and volumetric strains. We find that although most of the vacancy clusters appear to be thermodynamically stable, some of the immediate sized clusters have high probability of dissociation into smaller clusters.
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Submitted 21 July, 2009;
originally announced July 2009.
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Density-gradient-corrected embedded atom method
Authors:
Gang Wu,
Gang Lu,
Carlos J. Garcia-Cervera,
Weinan E
Abstract:
Through detailed comparisons between Embedded Atom Method (EAM) and first-principles calculations for Al, we find that EAM tends to fail when there are large electron density gradients present. We attribute the observed failures to the violation of the uniform density approximation (UDA) underlying EAM. To remedy the insufficiency of UDA, we propose a gradient-corrected EAM model which introduce…
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Through detailed comparisons between Embedded Atom Method (EAM) and first-principles calculations for Al, we find that EAM tends to fail when there are large electron density gradients present. We attribute the observed failures to the violation of the uniform density approximation (UDA) underlying EAM. To remedy the insufficiency of UDA, we propose a gradient-corrected EAM model which introduces gradient corrections to the embedding function in terms of exchange-correlation and kinetic energies. Based on the perturbation theory of "quasiatoms" and density functional theory, the new embedding function captures the essential physics missing in UDA, and paves the way for develo** more transferable EAM potentials. With Voter-Chen EAM potential as an example, we show that the gradient corrections can significantly improve the transferability of the potential.
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Submitted 28 January, 2009;
originally announced January 2009.
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Spacial Modulation of the Magnetization in Cobalt Nanowires
Authors:
Gerd Bergmann,
Yaqi Tao,
Jia G. Lu,
Richard S. Thompson
Abstract:
Cobalt nanowires with a diameter in the range between 50 to 100nm can be prepared as single-crystal wires with the easy axis (the c-axis) perpendicular to the wire axis. The competition between the crystal anisotropy and demagnetization energy frustrates the magnetization direction. A periodic modulation of the angle between M and the wire axis yields a lower energy.
Cobalt nanowires with a diameter in the range between 50 to 100nm can be prepared as single-crystal wires with the easy axis (the c-axis) perpendicular to the wire axis. The competition between the crystal anisotropy and demagnetization energy frustrates the magnetization direction. A periodic modulation of the angle between M and the wire axis yields a lower energy.
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Submitted 4 July, 2007;
originally announced July 2007.
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From Electrons to Finite Elements: A Concurrent Multiscale Approach for Metals
Authors:
Gang Lu,
E. B. Tadmor,
Efthimios Kaxiras
Abstract:
We present a multiscale modeling approach that concurrently couples quantum mechanical, classical atomistic and continuum mechanics simulations in a unified fashion for metals. This approach is particular useful for systems where chemical interactions in a small region can affect the macroscopic properties of a material. We discuss how the coupling across different scales can be accomplished eff…
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We present a multiscale modeling approach that concurrently couples quantum mechanical, classical atomistic and continuum mechanics simulations in a unified fashion for metals. This approach is particular useful for systems where chemical interactions in a small region can affect the macroscopic properties of a material. We discuss how the coupling across different scales can be accomplished efficiently, and we apply the method to multiscale simulations of an edge dislocation in aluminum in the absence and presence of H impurities.
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Submitted 31 May, 2005;
originally announced June 2005.
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Hydrogen Embrittlement of Aluminum: the Crucial Role of Vacancies
Authors:
Gang Lu,
Efthimios Kaxiras
Abstract:
We report first-principles calculations which demonstrate that vacancies can combine with hydrogen impurities in bulk aluminum and play a crucial role in the embrittlement of this prototypical ductile solid. Our studies of hydrogen-induced vacancy superabundant formation and vacancy clusterization in aluminum lead to the conclusion that a large number of H atoms (up to twelve) can be trapped at…
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We report first-principles calculations which demonstrate that vacancies can combine with hydrogen impurities in bulk aluminum and play a crucial role in the embrittlement of this prototypical ductile solid. Our studies of hydrogen-induced vacancy superabundant formation and vacancy clusterization in aluminum lead to the conclusion that a large number of H atoms (up to twelve) can be trapped at a single vacancy, which over-compensates the energy cost to form the defect. In the presence of trapped H atoms, three nearest-neighbor single vacancies which normally would repel each other, aggregate to form a trivacancy on the slip plane of Al, acting as embryos for microvoids and cracks and resulting in ductile rupture along the these planes.
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Submitted 18 March, 2005;
originally announced March 2005.
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Spin dependent transport in ferromagnetic/superconductor/ferromagnetic single electron transistor
Authors:
Dawei Wang,
Jia G. Lu
Abstract:
Ferromagnetic single electron transistors with Al islands and orthogonal ferromagnetic leads (Co) are fabricated using ebeam lithography followed by shadow evaporation techniques. I-V characteristics exhibit typical single electron tunneling effects. Transport measurements performed in external magnetic field show that, when the two ferromagnetic leads are in antiparallel configuration, spin imb…
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Ferromagnetic single electron transistors with Al islands and orthogonal ferromagnetic leads (Co) are fabricated using ebeam lithography followed by shadow evaporation techniques. I-V characteristics exhibit typical single electron tunneling effects. Transport measurements performed in external magnetic field show that, when the two ferromagnetic leads are in antiparallel configuration, spin imbalance leads to a suppression of superconductivity.
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Submitted 14 October, 2004;
originally announced October 2004.
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Critical Scaling of Extended Power Law I-V Isotherms near Vortex Glass Transition
Authors:
Z. H. Ning,
X. Hu,
K. X. Chen,
L. Yin,
G. Lu,
X. L. Xu,
J. D. Guo,
F. R. Wang,
C. Y. Li,
D. L. Yin
Abstract:
In view of the question about the vortex glass theory of the freezing of disordered vortex matter raised by recent experimental observations we reinvestigate the critical scaling of high $T_c$ superconductors. We find that dc current-voltage characteristic of mixed state superconductors has the general form of extended power law which is based on the Ginzburg-Landau (GL) functional in the simila…
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In view of the question about the vortex glass theory of the freezing of disordered vortex matter raised by recent experimental observations we reinvestigate the critical scaling of high $T_c$ superconductors. We find that dc current-voltage characteristic of mixed state superconductors has the general form of extended power law which is based on the Ginzburg-Landau (GL) functional in the similar way as the vortex glass theory. Isotherms simulated from this nonlinear equation fit the experimental I-V data of Strachan et al.[Phys.Rev.Lett. 87, 067007 (2001)]. The puzzling question of the derivative plot for the I-V curves and the controversy surrounding the values of critical exponents are also discussed.
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Submitted 12 December, 2004; v1 submitted 9 July, 2004;
originally announced July 2004.
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Multiscale simulations in simple metals: a density-functional based methodology
Authors:
Nicholas Choly,
Gang Lu,
Weinan E,
Efthimios Kaxiras
Abstract:
We present a formalism for coupling a density functional theory-based quantum simulation to a classical simulation for the treatment of simple metallic systems. The formalism is applicable to multiscale simulations in which the part of the system requiring quantum-mechanical treatment is spatially confined to a small region. Such situations often arise in physical systems where chemical interact…
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We present a formalism for coupling a density functional theory-based quantum simulation to a classical simulation for the treatment of simple metallic systems. The formalism is applicable to multiscale simulations in which the part of the system requiring quantum-mechanical treatment is spatially confined to a small region. Such situations often arise in physical systems where chemical interactions in a small region can affect the macroscopic mechanical properties of a metal. We describe how this coupled treatment can be accomplished efficiently, and we present a coupled simulation for a bulk aluminum system.
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Submitted 17 April, 2004;
originally announced April 2004.
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An Overview of Multiscale Simulations of Materials
Authors:
Gang Lu,
Efthimios Kaxiras
Abstract:
Multiscale modeling of material properties has emerged as one of the grand challenges in material science and engineering. We provide a comprehensive, though not exhaustive, overview of the current status of multiscale simulations of materials. We categorize the different approaches in the spatial regime into sequential and concurrent, and we discuss in some detail representative methods in each…
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Multiscale modeling of material properties has emerged as one of the grand challenges in material science and engineering. We provide a comprehensive, though not exhaustive, overview of the current status of multiscale simulations of materials. We categorize the different approaches in the spatial regime into sequential and concurrent, and we discuss in some detail representative methods in each category. We classify the multiscale modeling approaches that deal with the temporal scale into three different categories, and we discuss representative methods pertaining to the each of these categories. Finally, we offer some views on the strength and weakness of the multiscale approaches that are discussed, and touch upon some of the challenging multiscale modeling problems that need to be addressed in the future.
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Submitted 6 January, 2004;
originally announced January 2004.
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Scaling of ac Susceptibility and Nonlinear Response in High-temperature Superconductors
Authors:
K. X. Chen,
Z. H. Ning,
H. Y. Xu,
Z. Qi,
G. Lu,
F. R. Wang,
D. L. Yin
Abstract:
The magnetic ac susceptibility of high-temperature superconductors is shown to obey some scaling relations.We try to ananlyse this behavior within the framework of a common nonlinear response function of mixed state.The derived equations for critical current and ac susceptibility (x(T)) agree with the scaling relations of experimental data.
The magnetic ac susceptibility of high-temperature superconductors is shown to obey some scaling relations.We try to ananlyse this behavior within the framework of a common nonlinear response function of mixed state.The derived equations for critical current and ac susceptibility (x(T)) agree with the scaling relations of experimental data.
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Submitted 17 September, 2002;
originally announced September 2002.
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Hydrogen-induced Unzip** of Single-Walled Carbon Nanotubes
Authors:
Henry Scudder,
Gang Lu,
Nicholas Kioussis
Abstract:
The chemisorption of atomic hydrogen on the single-walled armchair carbon nanotube is studied with ab initio calculations. A single H atom is found to be chemisorbed on both the inside and outside wall of the nanotube. The binding energy of H adsorption at the exterior of the nanotube is much greater than that at the interior of the nanotube. For the first time, we predict that two rows of H ato…
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The chemisorption of atomic hydrogen on the single-walled armchair carbon nanotube is studied with ab initio calculations. A single H atom is found to be chemisorbed on both the inside and outside wall of the nanotube. The binding energy of H adsorption at the exterior of the nanotube is much greater than that at the interior of the nanotube. For the first time, we predict that two rows of H atoms chemisorbed on selective sites exterior to the nanotube can break the nearest-neighbor C-C bond of the nanotube through the concerted formation of C-H bonds, leading to the unzip** of the nanotube wall. We provide insights into the underlying electronic structure responsible for the H-induced unzip** of the nanotube, lending strong support to the recent experimental observations for the coalescence of single-walled nanotubes in the presence of atomic hydrogen. Interestingly, H atoms chemisorbed inside the nanotube do not lead to the breaking of the C-C bonds.
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Submitted 31 August, 2002; v1 submitted 27 August, 2002;
originally announced August 2002.
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A nonplanar Peierls-Nabarro model and its applications to dislocation cross-slip
Authors:
Gang Lu,
Vasily V. Bulatov,
Nicholas Kioussis
Abstract:
A novel semidiscrete Peierls-Nabarro model is introduced which can be used to study dislocation spreading at more than one slip planes, such as dislocation cross-slip and junctions. The strength of the model, when combined with ab initio calculations for the energetics, is that it produces essentiallyan atomistic simulation for dislocation core properties without suffering from the uncertainties…
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A novel semidiscrete Peierls-Nabarro model is introduced which can be used to study dislocation spreading at more than one slip planes, such as dislocation cross-slip and junctions. The strength of the model, when combined with ab initio calculations for the energetics, is that it produces essentiallyan atomistic simulation for dislocation core properties without suffering from the uncertainties associated with empirical potentials. Therefore, this method is particularly useful in providing insight into alloy design when empirical potentials are not available or not reliable for such multi-element systems. As an example, we study dislocation cross-slip and constriction process in two contrasting fcc metals, Al and Ag. We find that the screw dislocation in Al can cross-slip spontaneously in contrast with that in Ag, where the screw dislocation splits into two partials, which cannot cross-slip without first being constricted. The response of the dislocation to an external stress is examined in detail. The dislocation constriction energy and the critical stress for cross-slip are determined, and from the latter, we estimate the cross-slip energy barrier for straight screw dislocations.
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Submitted 22 August, 2002;
originally announced August 2002.
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Can vacancies lubricate dislocation motion in aluminum?
Authors:
Gang Lu,
Efthimios Kaxiras
Abstract:
The interaction of vacancy with dislocations in Al is studied using the Semidiscrete Variational Peierls-Nabarro model with ab initio determined gamma surface. For the first time, we confirm theoretically the so-called vacancy lubrication effect on dislocation motion in Al, a discovery that can settle a long-standing controversy in dislocation theory for fcc metals. We provide insights on the lu…
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The interaction of vacancy with dislocations in Al is studied using the Semidiscrete Variational Peierls-Nabarro model with ab initio determined gamma surface. For the first time, we confirm theoretically the so-called vacancy lubrication effect on dislocation motion in Al, a discovery that can settle a long-standing controversy in dislocation theory for fcc metals. We provide insights on the lubrication effect by exploring the connection between dislocation mobility and its core width. We predict an increased dislocation splitting in the presence of vacancy. We find that on average there is a weak repulsion between vacancies and dislocations which is independent of dislocation character.
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Submitted 16 April, 2002;
originally announced April 2002.
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Dislocation constriction and cross-slip in Al and Ag: an ab initio study
Authors:
Gang Lu,
Vasily V. Bulatov,
Nicholas Kioussis
Abstract:
A novel model based on the Peierls framework of dislocations is developed. The new theory can deal with a dislocation spreading at more than one slip planes. As an example, we study dislocation cross-slip and constriction process of two fcc metals, Al and Ag. The energetic parameters entering the model are determined from ab initio calculations. We find that the screw dislocation in Al can cross…
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A novel model based on the Peierls framework of dislocations is developed. The new theory can deal with a dislocation spreading at more than one slip planes. As an example, we study dislocation cross-slip and constriction process of two fcc metals, Al and Ag. The energetic parameters entering the model are determined from ab initio calculations. We find that the screw dislocation in Al can cross-slip spontaneously in contrast with that in Ag, which splits into partials and cannot cross-slip without first being constricted. The dislocation response to an external stress is examined in detail. We determine dislocation constriction energy and critical stress for cross-slip, and from the latter, we estimate the cross-slip energy barrier for the straight screw dislocations.
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Submitted 26 February, 2002;
originally announced February 2002.